Film forming device

Abstract

To provide a film formation device capable of forming, on a substrate, an object film having more uniform film thickness.SOLUTION: This film formation device 100 comprises a chamber 1, a mounting stand 21, and a fluid head 3. The fluid head 3 is provided to a position, within the chamber 1, that faces a first main surface of a substrate W that is mounted on the mounting stand 21. The fluid head 3 has a plasma chamber 4b, a plasma source 5, a plurality of first outflow ports 4c, a gas flow path 6b, and a plurality of second outflow ports 6c. The plasma source 5 turns a first raw-material gas into plasma in the plasma chamber 4b. The first outflow ports 4c are arranged in a two-dimensional array in an overlapping region that overlaps the first main surface of the substrate W as seen in plan view. An active species that is derived from the first raw-material gas flows from the first outflow ports 4c toward the first main surface of the substrate W. The plurality of second outflow ports 6c are arranged in a two-dimensional array at different positions than the plurality of first outflow ports 4c in the overlapping region. A second raw-material gas flows from the plurality of second outflow ports 6c toward the first main surface of the substrate W.SELECTED DRAWING: Figure 1

Description

Technical Field

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[0006] Therefore, the present disclosure aims to provide a film deposition apparatus that can form a target film on a substrate with a more uniform film thickness. [Means for solving the problem]

[0007] The first embodiment is a film deposition apparatus comprising a chamber, a mounting table provided in the chamber on which a substrate is placed, and a fluid head provided in the chamber at a position facing the first main surface of the substrate placed on the mounting table, wherein the fluid head comprises one or more first inlets, a plasma chamber through which a first raw material gas flows in, a plasma source for plasmaizing the first raw material gas in the plasma chamber, and a heavy part that communicates with the plasma chamber and overlaps the first main surface of the substrate in a plan view. The system includes a plurality of first outlets arranged two-dimensionally in multiple regions, through which active species generated by the plasmaification of the first raw material gas flow toward the first main surface of the substrate; one or more second inlets; a gas flow path through which the second raw material gas flows in and which is separated from the plasma chamber; and a plurality of second outlets that communicate with the gas flow path and are arranged two-dimensionally in the overlapping region at positions different from the plurality of first outlets, through which the second raw material gas flows toward the first main surface of the substrate. The gas flow path is located on the opposite side of the plasma chamber from the aforementioned stand and has a flow path space through which the second raw material gas flows in through the second inlet, and a plurality of through-flow channels extending from the flow path space and penetrating the plasma chamber, with the plurality of second outlets formed at the ends of each of the plurality of through-flow channels, and the fluid head includes a conductive shield provided between each of the plurality of through-flow channels and the plasma chamber. . A second embodiment is a film deposition apparatus comprising a chamber, a mounting table provided in the chamber on which a substrate is placed, and a fluid head provided in the chamber at a position facing the first main surface of the substrate placed on the mounting table, wherein the fluid head comprises one or more first inlets, a plasma chamber through which a first raw material gas flows in, a plasma source for plasmaizing the first raw material gas in the plasma chamber, a plurality of first outlets communicating with the plasma chamber and arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, through which active species generated by plasmaization of the first raw material gas flow out toward the first main surface of the substrate, one or more second inlets, and the second A second raw material gas flows in through an inlet, and the gas flow path includes a gas channel separated from the plasma chamber, and a plurality of second outlets that communicate with the gas flow path and are arranged in a two-dimensional distribution in the overlapping region at positions different from the plurality of first outlets, through which the second raw material gas flows out toward the first main surface of the substrate. The gas flow path is located on the opposite side of the base described above from the plasma chamber, and has a flow path space through which the second raw material gas flows in through the second inlet, and a plurality of through-flow paths extending from the flow path space and penetrating the plasma chamber, with the plurality of second outlets formed at the ends of each of the plurality of through-flow paths, and the opening area of ​​each of the plurality of second outlets is smaller than the flow path area of ​​each of the plurality of through-flow paths. A third embodiment is a film deposition apparatus comprising a chamber, a mounting table provided in the chamber on which a substrate is placed, a fluid head provided in the chamber at a position facing the first main surface of the substrate placed on the mounting table, and a heater for heating the substrate from the second main surface side of the substrate, wherein the fluid head comprises one or more first inlets, a plasma chamber through which a first raw material gas flows in, a plasma source for plasmaizing the first raw material gas in the plasma chamber, a plurality of first outlets that communicate with the plasma chamber and are arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, and through which active species generated by plasmaization of the first raw material gas flow out toward the first main surface of the substrate, one or more second inlets, a gas flow path through which a second raw material gas flows in and which is separated from the plasma chamber, and The fluid head includes a plurality of second outlets that communicate with the gas flow path and are arranged in a two-dimensional distribution in the overlapping region at positions different from the plurality of first outlets, through which the second raw material gas flows out toward the first main surface of the substrate, the gas flow path is located on the opposite side of the plasma chamber from the base described above, and has a flow path space through which the second raw material gas flows in through the second inlet, and a plurality of through-flow paths extending from the flow path space and penetrating the plasma chamber, with the plurality of second outlets formed at the ends of each of the plurality of through-flow paths, at least a portion of the plasma source provided between the flow path space and the plasma chamber and penetrating through the plurality of through-flow paths, the fluid head further includes a cooling section for cooling the plasma source, the cooling section provided between the flow path space and the plasma source and penetrating through the plurality of through-flow paths.

[0010] A fourth embodiment is a film deposition apparatus according to the third embodiment, wherein the plasma source is a surface wave plasma source or a hollow cathode discharge type plasma source.

[0015] The 5 The aspects are as follows: 4 A film deposition apparatus according to any one of the embodiments thereof, wherein the first inlet is formed on the side of the plasma chamber, and among the plurality of first outlets, the aperture ratio of the first outlet located in the central region of the overlapping region is greater than the aperture ratio of the first outlet located in the outer peripheral region of the overlapping region that is outside the central region.

[0016] The 6 The aspects are as follows: 5 A film deposition apparatus according to any one of the embodiments thereof, wherein the second inlet is formed on the side of the gas flow path, and among the plurality of second outlets, the opening ratio of the second outlet located in the central region of the overlapping region is greater than the opening ratio of the second outlet located in the outer peripheral region of the overlapping region that is outside the central region.

[0017] The 7 The aspects are as follows: 6 A film deposition apparatus according to any one of the embodiments thereof, wherein the second inlet is formed at the upper part of the central portion of the gas flow path.

[0018] The 8 The manner of is, A film deposition apparatus comprising a chamber, a mounting table provided within the chamber on which a substrate is placed, and a fluid head provided within the chamber at a position facing the first main surface of the substrate placed on the mounting table, wherein the fluid head comprises one or more first inlets, a plasma chamber through which a first raw material gas flows in, a plasma source for plasmaizing the first raw material gas in the plasma chamber, and two overlapping regions that are in communication with the plasma chamber and overlap the first main surface of the substrate in a plan view. The film deposition apparatus includes a plurality of first outlets arranged in a dimensionally dispersed manner, through which active species generated by the plasmaification of the first raw material gas flow toward the first main surface of the substrate; one or more second inlets; a gas flow path through which the second raw material gas flows in and which is separated from the plasma chamber; and a plurality of second outlets that communicate with the gas flow path and are arranged in a 2D dispersed manner in the overlapping region at positions different from the plurality of first outlets, through which the second raw material gas flows toward the first main surface of the substrate. The system includes a first gas supply unit that supplies the first raw material gas to the fluid head, and a second gas supply unit that supplies the second raw material gas and an inert carrier gas for transporting the second raw material gas to the fluid head. The second gas supply unit supplies the carrier gas to the fluid head without supplying the second raw material gas for a predetermined period from the time the plasma source is activated while the first gas supply unit supplies the first raw material gas, and supplies the second raw material gas and the carrier gas to the fluid head after the predetermined period has elapsed.

[0019] The 9 The aspects are as follows: 8 A film deposition apparatus according to any one embodiment thereof, wherein the first raw material gas includes a gas having a Group 15 element, and the second raw material gas includes an organometallic gas having a Group 13 element. [Effects of the Invention]

[0020] According to the first aspect, the active species derived from the first source gas flow out toward the first main surface of the substrate from a plurality of first outlets two-dimensionally distributed in the overlapping region overlapping the first main surface of the substrate. Therefore, the active species are uniformly supplied to the first main surface of the substrate. The second source gas flows out toward the first main surface of the substrate from a plurality of second outlets two-dimensionally distributed at positions different from the first outlets in the overlapping region overlapping the first main surface of the substrate. Therefore, the second source gas is also uniformly supplied to the first main surface of the substrate. Accordingly, the target film obtained by the reaction of the active species and the second source gas can be formed more uniformly on the first main surface of the substrate. Furthermore, since the generation of an electric field for plasma can be suppressed in the through-flow channel, the application of an unwanted electric field to the second raw material gas can be suppressed. According to the second embodiment, the distance between the second outlet and the first outlet can be increased. This reduces the possibility that active species flowing out from the first outlet will reach the second outlet. Consequently, the reaction between the active species and the second raw material gas near the second outlet can be suppressed, and the formation of an unwanted compound film on the inner surface forming the second outlet can be prevented. According to the third embodiment, since the cooling unit is close to the plasma source, the plasma source can be effectively cooled. In addition, the cooling unit can suppress heat transfer from the plasma source to the flow channel space. Therefore, the possibility of thermal decomposition of the second raw material gas in the flow channel space can be reduced.

[0023] The According to the fourth aspect, plasma can be generated in the plasma chamber over a larger area with respect to the substrate.

[0027] The 5 aspect enables the active species to flow out more uniformly from the plurality of first outlets.

[0028] The 6 and the 7 aspects enable the second source gas to flow out more uniformly from the plurality of second outlets.

[0029] The 8In this configuration, during a predetermined period at the beginning of the plasma source's operation, the second raw material gas does not flow out of the second outlet, while the carrier gas flows out of the second outlet. Although the plasma is unstable during this predetermined period, the second raw material gas does not flow out of the second outlet, so the film deposition process does not begin. This suppresses the uneven formation of the target film on the first main surface of the substrate. Moreover, since the carrier gas flows out of the second outlet, the active species that flow out of the first outlet hardly flow into the second outlet. Therefore, even if the second gas supply unit supplies the second raw material gas to the fluid head after the predetermined period has elapsed, there is hardly any reaction between the second raw material gas and the active species in the gas flow path. Thus, the formation of unwanted compound films on the inner circumferential surface forming the gas flow path can be suppressed.

[0030] The 9 According to this embodiment, a III-V compound semiconductor can be formed more uniformly on the first main surface of the substrate. [Brief explanation of the drawing]

[0031] [Figure 1] This figure schematically shows an example of the configuration of a film deposition apparatus according to the first embodiment. [Figure 2] This is a schematic cross-sectional view showing an example of the configuration of a fluid head according to the first embodiment. [Figure 3] This is a schematic cross-sectional view showing an example of the configuration of a fluid head. [Figure 4] This is an exploded cross-sectional view showing an example of the configuration of a fluid head. [Figure 5] This is a schematic cross-sectional view showing an example of the configuration of a plasma source. [Figure 6] This is a schematic cross-sectional view showing an example of the configuration of a plasma source. [Figure 7] This is a block diagram that schematically shows an example of the configuration of the control unit. [Figure 8] This figure schematically shows another example of a fluid head according to the first embodiment. [Figure 9] This diagram shows a schematic breakdown of the components of the fluid head shown in Figure 8. [Figure 10] This figure schematically shows the XX cross-section of Figure 9. [Figure 11] This figure schematically shows the XI-XI cross section of Figure 8. [Figure 12] This is a schematic cross-sectional view showing an example of the configuration of a fluid head according to the second embodiment. [Figure 13] This is a schematic cross-sectional view showing an example of the configuration of the cooling unit. [Figure 14] This is a schematic cross-sectional view showing an example of the configuration of the second flow channel member of the fluid head according to the third embodiment. [Figure 15] This is a schematic cross-sectional view showing another example of the configuration of the second flow channel member of the fluid head according to the third embodiment. [Figure 16] This is a schematic cross-sectional view showing an example of the configuration of a fluid head according to the third embodiment. [Figure 17] This is a schematic cross-sectional view showing an example of the configuration of the first flow channel member of a fluid head according to the third embodiment. [Figure 18] This figure schematically shows an example of the configuration of the second gas supply unit according to the fourth embodiment. [Figure 19] This flowchart shows an example of the operation of a film deposition apparatus according to the fourth embodiment. [Modes for carrying out the invention]

[0032] The embodiments will be described below with reference to the attached drawings. Note that the drawings are schematic representations, and for the sake of clarity, some components may be omitted or simplified as appropriate. Furthermore, the relative sizes and positions of the components shown in the drawings are not necessarily accurate and may be modified as appropriate.

[0033] Furthermore, in the following explanations, similar components will be denoted by the same symbols, and their names and functions will also be the same. Therefore, detailed explanations of them may be omitted to avoid redundancy.

[0034] Furthermore, even if ordinal numbers such as "first" or "second" are used in the following descriptions, these terms are used for convenience to facilitate understanding of the embodiments and are not limited to the order that may result from these ordinal numbers.

[0035] When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions shall not only strictly represent the positional relationship but also represent a state in which there is a relative displacement in terms of angle or distance within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating equality are used (e.g., "identical," "equal," "homogeneous," etc.), unless otherwise specified, such expressions shall not only strictly represent a state in which there is a quantitatively exact equality but also represent a state in which there is a difference within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating shape are used (e.g., "quadrilateral" or "cylindrical"), unless otherwise specified, such expressions shall not only strictly represent the geometrically exact shape but also represent a shape with, for example, irregularities or chamfers within a range in which equivalent effects are obtained. When expressions such as "equip," "possess," "feature," "include," or "have" a single component are used, such expressions are not exclusive expressions that exclude the existence of other components. When the expression "at least one of A, B, and C" is used, it includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0036] <First Embodiment> <Overview of the film deposition apparatus> Figure 1 is a schematic diagram showing an example of the configuration of a film deposition apparatus 100 according to the first embodiment. The film deposition apparatus 100 is an apparatus that forms a target film on a substrate W by a vapor phase growth method using plasma. The target film is a film containing a compound, for example, a III-V compound semiconductor film containing group 13 elements (hereinafter referred to as group III elements) and group 15 elements (hereinafter referred to as group V elements). When nitrogen is used as the group V element, this compound semiconductor may be called a group III nitride semiconductor. Group III nitride semiconductors are used, for example, in lateral transistors.

[0037] The substrate W is, for example, a plate. The substrate W is, for example, a substrate made of sapphire, silicon carbide, or silicon. The substrate W has, for example, a disc shape. The substrate W has a first main surface and a second main surface on the opposite side of the first main surface. Here, the first main surface is the top surface of the substrate W, and the second main surface is the bottom surface of the substrate W. Since a compound semiconductor film crystallizes on the first main surface of the substrate W, the substrate W can also be called a growth substrate. Note that the material and shape of the substrate W are not limited to these and can be changed as appropriate.

[0038] As shown in Figure 1, the film deposition apparatus 100 includes a chamber 1, a substrate holding section 2, a fluid head 3, and a control section 9. After outlining each component, a specific example will be described in detail.

[0039] Chamber 1 has a box-shaped hollow form. The internal space of Chamber 1 corresponds to the processing space for performing film deposition on the substrate W. Chamber 1 may also be called a vacuum chamber. The side walls of Chamber 1 may be provided with shutters or gate valves (not shown) for loading and unloading the substrate W.

[0040] The substrate holding section 2 is provided inside the chamber 1. The substrate holding section 2 includes a susceptor 21, which serves as a mounting platform on which the substrate W is placed. The substrate W is placed on the susceptor 21 in a horizontal position. Here, a horizontal position means that the thickness direction of the substrate W is aligned with the vertical direction.

[0041] In the example shown in Figure 1, the film deposition apparatus 100 is also equipped with a suction unit 7. The suction unit 7 sucks gas from inside the chamber 1, thereby reducing the pressure inside the chamber 1. The suction unit 7 adjusts the pressure inside the chamber 1 to a predetermined reduced pressure range suitable for the film deposition process.

[0042] In the example shown in Figure 1, the film deposition apparatus 100 is also equipped with a heater 8. The heater 8 is located inside the chamber 1 and heats the substrate W. Specifically, the heater 8 heats the substrate W so that its temperature is within a temperature range suitable for film deposition. In the example shown in Figure 1, the heater 8 heats the substrate W from the second main surface (in this case, the bottom surface) side.

[0043] The fluid head 3 is positioned within the chamber 1, facing the first main surface (in this case, the top surface) of the substrate W on the susceptor 21. Here, the fluid head 3 is positioned directly above the substrate W on the susceptor 21. The fluid head 3 causes the activated species obtained by plasma-generating the first source gas to flow out toward the first main surface of the substrate W, and also causes the second source gas to flow out toward the first main surface of the substrate W.

[0044] The first raw material gas contains, for example, a group V gas containing a group V element. The group V element is, for example, nitrogen. In this case, nitrogen gas can be used as the group V gas. The first raw material gas may also contain hydrogen gas in addition to nitrogen gas. That is, the first raw material gas may be a mixture of group V gas and hydrogen gas. When the first raw material gas is a mixture of nitrogen gas and hydrogen gas, reactive species such as nitrogen radicals and hydrogen radicals are generated by plasma formation.

[0045] The second raw material gas contains, for example, an organometallic gas containing a group III element. A group III element is, for example, gallium. In this case, TMGa (trimethylgallium), TEGa (triethylgallium), or TDMAGa (trisdimethylamidogallium) can be used as the organometallic gas.

[0046] When the active species derived from the first source gas and the second source gas are supplied to the first main surface of the substrate W, they react with each other to form a target film on the first main surface of the substrate W. For example, a group III nitride semiconductor film is formed as the target film.

[0047] Figures 2 and 3 are schematic cross-sectional views illustrating an example of the configuration of the fluid head 3. Figure 2 shows the section II-II in Figure 1, and Figure 3 shows the section III-III in Figure 1.

[0048] As shown in Figures 1 to 3, the fluid head 3 has a first inlet 4a, a plasma chamber 4b, a plurality of first outlets 4c, a plasma source 5, a second inlet 6a, a gas flow path 6b, and a plurality of second outlets 6c.

[0049] As will be described in detail later, the first raw material gas flows into the plasma chamber 4b through the first inlet 4a, and the second raw material gas flows into the gas channel 6b through the second inlet 6a. The plasma chamber 4b and the gas channel 6b are separated from each other inside the fluid head 3. In other words, the plasma chamber 4b and the gas channel 6b are not in communication with each other inside the fluid head 3.

[0050] In the examples shown in Figures 1 and 2, the plasma chamber 4b is a flattened space whose vertical dimensions are smaller than its horizontal dimensions. In the examples shown in Figures 1 and 2, the first inlet 4a is formed on the side of the plasma chamber 4b. The first inlet 4a is connected to the first gas supply unit 40. The first gas supply unit 40 supplies the first raw material gas to the plasma chamber 4b through the first inlet 4a.

[0051] Multiple first outlets 4c communicate with the plasma chamber 4b. Specifically, the multiple first outlets 4c are formed in the lower part of the plasma chamber 4b. The multiple first outlets 4c are distributed two-dimensionally within an overlapping region R0 that overlaps with the first main surface of the substrate W in a plan view (see also Figure 2). In Figures 2 and 3, the outline of the substrate W in a plan view is shown by dashed lines. In the example of Figure 2, the multiple first outlets 4c are arranged in a matrix. The multiple first outlets 4c may be distributed across most of the overlapping region R0. As a more specific example, the multiple first outlets 4c may be distributed within a circular region that is concentric with the substrate W and has a diameter of at least half the diameter of the substrate W. In the example of Figure 2, each first outlet 4c has a circular shape in a plan view.

[0052] The plasma source 5 plasma-excites the first raw material gas in the plasma chamber 4b. In other words, the plasma source 5 plasmaizes the first raw material gas. In the example in Figure 1, the plasma source 5 is located on the opposite side of the plasma chamber 4b from the susceptor 21. Here, the plasma source 5 is located vertically above the plasma chamber 4b. The plasma source 5 generates a plasma field in the plasma chamber 4b. As the first raw material gas passes through this field, the field acts on the first raw material gas, plasmaizing it. As a result, highly reactive species such as ions or neutral radicals are generated in the plasma chamber 4b.

[0053] When the first raw material gas contains hydrogen gas and nitrogen gas, hydrogen radicals and nitrogen radicals are generated as active species. These active species flow out from multiple first outlets 4c. The active species from the first outlets 4c flow toward the first main surface of the substrate W.

[0054] The second raw material gas flows into the gas flow path 6b through the second inlet 6a. In the examples shown in Figures 1 and 3, the second inlet 6a is formed on the side of the gas flow path 6b. The second inlet 6a is connected to the second gas supply unit 50. The second gas supply unit 50 supplies the second raw material gas to the gas flow path 6b through the second inlet 6a.

[0055] In the examples shown in Figures 1 and 3, the gas flow path 6b has a flow path space 6b1 and multiple through-flow channels 6b2. The flow path space 6b1 is located on the opposite side of the susceptor 21 from both the plasma chamber 4b and the plasma source 5. Here, the flow path space 6b1 is located vertically above the plasma source 5. In other words, the plasma source 5 is located between the flow path space 6b1 and the plasma chamber 4b.

[0056] In the examples shown in Figures 1 and 3, the flow channel space 6b1 is a flattened space whose vertical size is smaller than its horizontal size. Also in the examples shown in Figures 1 and 3, the second inlet 6a is formed on the side of the flow channel space 6b1.

[0057] Multiple through-channels 6b2 extend from the channel space 6b1 and penetrate the plasma source 5 and the plasma chamber 4b. Here, the through-channels 6b2 extend vertically downward from the channel space 6b1. A second outlet 6c is formed at the tip (in this case, the lower end) of each through-channel 6b2.

[0058] Multiple second outlets 6c communicate with the gas flow path 6b and are distributed two-dimensionally in different positions from the multiple first outlets 4c in the overlapping region R0 that overlaps with the first main surface of the substrate W in a plan view. The multiple second outlets 6c are arranged two-dimensionally in a plan view, for example, in a matrix (see also Figures 2 and 3). The multiple second outlets 6c may be distributed throughout most of the overlapping region R0. As a more specific example, the multiple second outlets 6c may be distributed in a circular region concentric with the substrate W, having a diameter of at least half the diameter of the substrate W. In the examples in Figures 2 and 3, each second outlet 6c has a circular shape in a plan view.

[0059] The second raw material gas that flows into the gas flow path 6b through the second inlet 6a flows through the gas flow path 6b toward a plurality of second outlets 6c, and flows out from the plurality of second outlets 6c toward the first main surface of the substrate W.

[0060] Since the substrate W is heated by the heater 8, the second raw material gas supplied to the first main surface of the substrate W undergoes thermal decomposition. The components generated by the thermal decomposition of the second raw material gas react with active species derived from the first raw material gas, and the resulting compound is formed as the target film on the first main surface of the substrate W. If the first raw material gas is a gas containing nitrogen and the second raw material gas is an organometallic gas containing a group III element, the target film is a group III nitride semiconductor film.

[0061] The control unit 9 provides overall control of the film deposition apparatus 100. For example, the control unit 9 controls the substrate holding unit 2, the first gas supply unit 40, the second gas supply unit 50, the plasma source 5, the suction unit 7, and the heater 8.

[0062] As described above, in the film deposition apparatus 100, active species derived from the first source gas flow out from a plurality of first outlets 4c toward the first main surface of the substrate W, and the second source gas flows out from a plurality of second outlets 6c toward the first main surface of the substrate W. In a plan view, the plurality of first outlets 4c and the plurality of second outlets 6c do not overlap with each other and are dispersed within an overlapping region R0 that overlaps with the first main surface of the substrate W, so that the active species and the second source gas are supplied more uniformly to the first main surface of the substrate W. As a result, the concentration distribution of the active species and the concentration distribution of the second source gas directly above the substrate W can be made more uniform. Therefore, the active species and the first source gas react with a more uniform distribution toward the first main surface of the substrate W. Consequently, the film deposition apparatus 100 can form the target film on the first main surface of the substrate W with a more uniform film thickness. When the first raw material gas contains a group V gas and the second raw material gas contains an organometallic gas containing a group III element, the film deposition apparatus 100 can form a group III-V compound semiconductor film on the first main surface of the substrate W with a more uniform film thickness.

[0063] Furthermore, in the example described above, the flow path space 6b1 of the gas flow path 6b is located on the opposite side of the plasma chamber 4b from the susceptor 21. With this structure, the flow path space 6b1 is located further away from the substrate W and the heater 8 compared to a structure where the gas flow path 6b is located on the susceptor 21 side of the plasma chamber 4b. Therefore, heat from the heater 8 is less likely to be transferred to the flow path space 6b1. Consequently, the possibility of thermal decomposition of the second raw material gas in the flow path space 6b1 can be reduced.

[0064] If the second raw material gas were to undergo thermal decomposition in the flow path space 6b1, the various components generated by the thermal decomposition would precipitate on the inner surface forming the gas flow path 6b, causing fluctuations in the flow area of ​​the gas flow path 6b. This could reduce the uniformity of the flow of the second raw material gas. In contrast, in the above example, thermal decomposition of the second raw material gas in the flow path space 6b1 can be suppressed, thus reducing the likelihood of uneven flow of the second raw material gas. Consequently, the second raw material gas flows out more uniformly from the multiple second outlets 6c.

[0065] Conversely, the plasma source 5 and plasma chamber 4b are located closer to the substrate W than the flow channel space 6b1. This allows for the supply of more active species to the first main surface of the substrate W. In other words, more active species can reach the first main surface of the substrate W before they become inactive. As a result, the film deposition apparatus 100 can form the target film on the first main surface of the substrate W more efficiently.

[0066] Furthermore, the plasma source 5 is located between the flow path space 6b1 of the gas flow path 6b and the plasma chamber 4b. This allows the plasma source 5 to be close to the plasma chamber 4b, making it easier to generate an electric field for the plasma in the plasma chamber 4b. In other words, the plasma source 5 can generate an electric field for the plasma in the plasma chamber 4b with high efficiency.

[0067] Next, we will describe in detail a specific example of each configuration.

[0068] <Substrate holding part> The substrate holder 2 holds the substrate W in a horizontal position. In the example shown in Figure 1, the substrate holder 2 includes a susceptor 21 and a susceptor holder 22. The susceptor 21 is a mounting platform for placing the substrate W and has, for example, a flat plate shape. The susceptor 21 is installed in a horizontal position, and the substrate W is placed on the upper surface of the susceptor 21 in a horizontal position. The first main surface (in this case, the upper surface) of the substrate W placed on the susceptor 21 is exposed within the chamber 1.

[0069] The susceptor holder 22 is located within the chamber 1 and holds the susceptor 21. In the example shown in Figure 1, the susceptor holder 22 includes a base 221 and a holding projection 222. The base 221 is located vertically below the susceptor 21 and faces the susceptor 21 with a vertical gap between them. The base 221 has, for example, a horizontal top surface on which the holding projection 222 is erected. For example, there are multiple holding projections 222, which are arranged along the periphery of the lower surface of the susceptor 21. The tips of the holding projections 222 abut against the susceptor 21 and support or hold the susceptor 21.

[0070] As shown in Figure 1, the substrate holder 2 may further include a rotation mechanism 23. The rotation mechanism 23 rotates the susceptor holder 22 around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and is aligned vertically. The rotation mechanism 23 has, for example, a shaft and a motor. The upper end of the shaft is connected to the lower surface of the base 221. The shaft extends along the rotation axis Q1 and is pivotally supported in the chamber 1 so as to be rotatable around the rotation axis Q1. The motor rotates the shaft around the rotation axis Q1. As a result, the susceptor holder 22, the susceptor 21, and the substrate W rotate together around the rotation axis Q1. Note that the substrate holder 2 does not necessarily have to include the rotation mechanism 23.

[0071] <Heater> The heater 8 heats the substrate W held by the substrate holding portion 2 within the chamber 1. In the example in Figure 1, the heater 8 heats the substrate W from the second main surface (in this case, the bottom surface). Specifically, the heater 8 is positioned vertically below the susceptor 21 and faces the susceptor 21 in the vertical direction. In the example in Figure 1, the heater 8 is located between the susceptor 21 and the base 221, and radially inward from the holding projection 222. The heater 8 may be, for example, an electrically resistive heater including a heating wire, or an optical heater including a light source that emits heating light.

[0072] Here, the heater 8 is configured so as not to rotate around the rotation axis Q1. In other words, the heater 8 is non-rotating. For example, the shaft of the rotating mechanism 23 is a hollow shaft, and the heater 8 is fixed to the chamber 1 via a fixing member 81 that penetrates the hollow portion.

[0073] <Suction part> The suction unit 7 draws gas from inside the chamber 1. In the example shown in Figure 1, the suction unit 7 includes a suction tube 71 and a suction mechanism 72. The upstream end of the suction tube 71 is connected to the exhaust port 1a of the chamber 1. In the example shown in Figure 1, the exhaust port 1a is formed vertically below the substrate W held by the substrate holding unit 2, and is formed, for example, on the side wall of the chamber 1. The suction mechanism 72 is, for example, a pump (more specifically, a vacuum pump) and is connected to the suction tube 71. The suction mechanism 72 is controlled by the control unit 9 and draws gas from inside the chamber 1 through the suction tube 71.

[0074] <First Gas Supply Department> The first gas supply unit 40 supplies the first raw material gas to the fluid head 3. In the example shown in Figure 1, the first gas supply unit 40 includes a first gas supply pipe 401, a group V gas supply pipe 411, a hydrogen gas supply pipe 421, valves 412 and 422, and flow rate adjustment units 413 and 423. The downstream end of the first gas supply pipe 401 is connected to the first inlet 4a of the fluid head 3. The upstream end of the first gas supply pipe 401 is connected to the downstream end of the group V gas supply pipe 411 and the downstream end of the hydrogen gas supply pipe 421. The upstream end of the group V gas supply pipe 411 is connected to a group V gas supply source 414, and the upstream end of the hydrogen gas supply pipe 421 is connected to a hydrogen gas supply source 424. The group V gas supply source 414 includes a storage unit (not shown) for storing group V gas, and the hydrogen gas supply source 424 includes a storage unit (not shown) for storing hydrogen gas.

[0075] Valve 412 and flow rate adjustment unit 413 are interposed in the V-type gas supply pipe 411. Valve 412 switches the flow path of the V-type gas supply pipe 411 open and closed. Flow rate adjustment unit 413 adjusts the flow rate of the V-type gas flowing through the V-type gas supply pipe 411. Flow rate adjustment unit 413 is, for example, a mass flow controller. Valve 422 and flow rate adjustment unit 423 are interposed in the hydrogen gas supply pipe 421. Valve 422 switches the flow path of the hydrogen gas supply pipe 421 open and closed. Flow rate adjustment unit 423 adjusts the flow rate of the hydrogen gas flowing through the hydrogen gas supply pipe 421. Flow rate adjustment unit 423 is, for example, a mass flow controller.

[0076] <Second Gas Supply Department> The second gas supply unit 50 supplies the second raw material gas to the fluid head 3. The second gas supply unit 50 includes a second gas supply pipe 501, a valve 502, and a flow rate adjustment unit 503. The downstream end of the second gas supply pipe 501 is connected to the second inlet 6a. The upstream end of the second gas supply pipe 501 is connected to the second gas supply source 504. The second gas supply source 504 includes a storage unit (not shown) for storing the second raw material gas. The second gas supply source 504 may supply not only the second raw material gas but also a carrier gas for transporting the second raw material gas to the upstream end of the second gas supply pipe 501. The carrier gas is an inert gas. As the inert gas, for example, at least one of a noble gas such as argon gas and nitrogen gas can be applied. In this case, the second raw material gas and carrier gas flow out from multiple second outlets 6c of the fluid head 3.

[0077] <Fluid Head> In the example shown in Figure 1, the fluid head 3 includes a first flow channel member 4, a plasma source 5, and a second flow channel member 6. Figure 4 is an exploded cross-sectional view showing an example of the configuration of the fluid head 3. In Figure 4, the second flow channel member 6, the plasma source 5, and the first flow channel member 4 are shown separated from each other. The first flow channel member 4 forms a plasma chamber 4b inside it, and the second flow channel member 6 forms a gas flow channel 6b inside it. Below, the second flow channel member 6 will be described, followed by the plasma source 5, and then the first flow channel member 4.

[0078] <Second flow channel member> In the example shown in Figure 4, the second flow channel member 6 includes a hollow plate portion 61 and a plurality of vertical pipes 65. The hollow plate portion 61 forms the flow channel space 6b1 of the gas flow channel 6b, and the plurality of vertical pipes 65 each form a plurality of through-flow channels 6b2.

[0079] The hollow plate portion 61 has a flattened shape in which its vertical size is smaller than its horizontal size, and includes an upper plate portion 62, a side wall 63, and a lower plate portion 64. The upper plate portion 62 has a flat plate shape and is provided in a position where its thickness direction is aligned with the vertical direction. In a plan view, the upper plate portion 62 has a circular shape that is concentric with, for example, the substrate W. The diameter of the upper plate portion 62 may be greater than or equal to the diameter of the substrate W. The lower plate portion 64 has a flat plate shape and is provided in a position where its thickness direction is aligned with the vertical direction. The lower plate portion 64 is located vertically below the upper plate portion 62 and, in a plan view, has a circular shape that is concentric with, for example, the substrate W. The diameter of the lower plate portion 64 may be greater than or equal to the diameter of the substrate W. The side wall 63 connects the periphery of the upper plate portion 62 and the periphery of the lower plate portion 64 in the vertical direction. A second inlet 6a is formed in a part of the side wall 63.

[0080] Multiple through holes are formed in the lower plate portion 64. The upper ends of the multiple vertical pipes 65 are connected to the lower plate portion 64 such that the upper opening of each pipe coincides with the through holes in the lower plate portion 64. Each vertical pipe 65 has a cylindrical shape and extends downward from the lower plate portion 64 in the vertical direction. Each vertical pipe 65 has, for example, a cylindrical shape. Each vertical pipe 65 penetrates the plasma source 5 and the first flow channel member 4 in the vertical direction, as will be described later.

[0081] In the example shown in Figure 4, a tip portion 66 is provided at the lower end of each vertical pipe 65. The tip portion 66 has a plate-like shape in which a second outlet 6c is formed. The tip portion 66 has, for example, a disc-like shape, and its outer edge is connected to the lower end edge of the vertical pipe 65. The inner surface of the tip portion 66 forms the second outlet 6c. In other words, the second outlet 6c is an opening that penetrates the tip portion 66 vertically. In such a structure, the diameter of the second outlet 6c is smaller than the inner diameter of the vertical pipe 65. In other words, the opening area of ​​the second outlet 6c is smaller than the flow area of ​​the through-flow channel 6b2. Here, the opening area is the area of ​​the second outlet 6c in the horizontal plane, and the flow area is the area of ​​the through-flow channel 6b2 in the horizontal plane.

[0082] <Plasma source> The plasma source 5 is located on the susceptor 21 side of the hollow plate portion 61 of the second flow channel member 6. More specifically, the plasma source 5 is located between the hollow plate portion 61 of the second flow channel member 6 and the first flow channel member 4. In other words, the plasma source 5 is located between the flow channel space 6b1 of the gas flow channel 6b and the plasma chamber 4b.

[0083] Referring also to Figure 4, the plasma source 5 has multiple through-holes 5d at positions corresponding to the multiple vertical pipes 65 of the second flow channel member 6 in the vertical direction. The multiple through-holes 5d penetrate the plasma source 5 along the vertical direction. The multiple vertical pipes 65 each penetrate the multiple through-holes 5d along the vertical direction. Each through-hole 5d has, for example, a circular shape in plan view.

[0084] In the example shown in Figure 4, the plasma source 5 is a flat, planar plasma source whose vertical size is smaller than its horizontal size. Specifically, the plasma source 5 is a surface wave plasma source that generates surface wave plasma and includes a waveguide member 51, a dielectric member 56, and a microwave generator 57.

[0085] Figures 5 and 6 are schematic cross-sectional views showing an example of the configuration of the plasma source 5. Figure 5 shows the VV section of Figure 4, and Figure 6 shows the VI-VI section of Figure 4.

[0086] The microwave generator 57 has an oscillator that emits microwaves. This oscillator may be, for example, a magnetron type or a solid-state type oscillator. The microwave generator 57 is located outside the substrate W in a plan view (see also Figure 1).

[0087] As shown in Figures 4 and 5, the waveguide member 51 is a hollow member that guides microwaves generated by the microwave generator 57 to the dielectric member 56. The waveguide member 51 is formed of a conductive material such as metal. In the example in Figures 4 and 5, the waveguide member 51 includes an upper plate portion 52, a side wall 53, a lower plate portion 54, and a plurality of hollow column portions 55. The upper plate portion 52 has a flat plate shape and is provided in a position where its thickness direction is aligned with the vertical direction. In a plan view, the upper plate portion 52 has a circular shape that is concentric with the substrate W, for example. The diameter of the upper plate portion 52 may be greater than or equal to the diameter of the substrate W. The lower plate portion 54 has a flat plate shape and is provided in a position where its thickness direction is aligned with the vertical direction. The lower plate portion 54 is located vertically below the upper plate portion 52 and, in a plan view, has a circular shape that is concentric with the substrate W, for example. The diameter of the lower plate portion 54 may be greater than or equal to the diameter of the substrate W. The side wall 53 connects the periphery of the upper plate portion 52 and the periphery of the lower plate portion 54 in the vertical direction. A connection port 53a is formed in a part of the side wall 53 for connecting to the output terminal of the microwave generator 57.

[0088] Multiple hollow column sections 55 are provided between the upper plate section 52 and the lower plate section 54. The hollow column sections 55 have a cylindrical shape, specifically a cylindrical shape. Multiple through holes are formed in the upper plate section 52 and the lower plate section 54, through which multiple vertical pipes 65 of the second flow channel member 6 pass in the vertical direction. The upper ends of the multiple hollow column sections 55 are connected to the upper plate section 52 so that their upper ends coincide with the multiple through holes in the upper plate section 52, and the lower ends of the multiple hollow column sections 55 are connected to the lower plate section 54 so that their lower ends coincide with the multiple through holes in the lower plate section 54. In other words, the through holes in the upper plate section 52, the hollow sections of the hollow column sections 55, and the through holes in the lower plate section 54 are in vertical communication and constitute the upper portion of the through hole 5d that penetrates the plasma source 5.

[0089] Furthermore, multiple openings (also called slots) 54a are formed in the lower plate portion 54 of the waveguide member 51 to guide microwaves to the dielectric member 56. Microwaves from the microwave generator 57 pass through the inside of the waveguide member 51 and are transmitted to the dielectric member 56 from each opening 54a. In the example of Figure 5, the openings 54a have an elongated shape extending in one direction in a plan view. Multiple openings 54a are arranged with spacing in their short direction. In the example of Figure 5, the longitudinal direction of the openings 54a is along the column direction of a matrix in which multiple hollow column portions 55 are arranged, and each opening 54a is formed between two adjacent rows.

[0090] The dielectric member 56 is positioned vertically below the waveguide member 51. The dielectric member 56 is made of a dielectric material (e.g., quartz glass). The dielectric member 56 has a flat plate shape and, in a plan view, for example, has a circular shape concentric with the substrate W (see also Figure 6). The diameter of the dielectric member 56 may be greater than or equal to the diameter of the substrate W. The upper surface of the dielectric member 56 is in full contact with the lower surface of the waveguide member 51 (i.e., the lower surface of the lower plate portion 54). The dielectric member 56 has multiple through holes formed at positions opposite to each of the multiple hollow column portions 55. Each through hole penetrates the dielectric member 56 vertically. In other words, each through hole of the dielectric member 56 constitutes the lower portion of the corresponding through hole 5d.

[0091] Microwaves from the aperture 54a of the waveguide member 51 propagate through the interior of the dielectric member 56 and act on the lower surface of the dielectric member 56. This generates a plasma field along the lower surface of the dielectric member 56. As the lower surface of the dielectric member 56 corresponds to the ceiling surface of the plasma chamber 4b, as described later, the plasma field is generated in the plasma chamber 4b. Therefore, the plasma field acts on the first raw material gas in the plasma chamber 4b, and the first raw material gas is converted into plasma in the plasma chamber 4b. Since the lower surface of the dielectric member 56 extends horizontally, the first raw material gas can be converted into plasma over a wide area in a plan view.

[0092] In the example described above, the plasma source 5 generates surface wave plasma using microwaves, but this is not necessarily the only method. The plasma source 5 may generate plasma using a so-called capacitive coupling method or an inductive coupling method. Another specific example of the plasma source 5 will be described later.

[0093] <First flow channel member> The first flow channel member 4 is positioned vertically below the plasma source 5. Together with the plasma source 5, the first flow channel member 4 forms a plasma chamber 4b. In the example shown in Figure 4, the first flow channel member 4 includes a side wall 43, a lower plate portion 44, and a plurality of hollow column portions 45. The lower plate portion 44 has a flat plate shape and is positioned so that its thickness direction is aligned with the vertical direction. In plan view, the lower plate portion 44 has a circular shape that is concentric with, for example, the substrate W. The diameter of the lower plate portion 44 may be, for example, greater than or equal to the diameter of the substrate W. The side wall 43 connects the periphery of the lower plate portion 44 to the periphery of the dielectric member 56 of the plasma source 5.

[0094] The lower plate portion 44 has multiple through holes through which multiple vertical pipes 65 of the second flow channel member 6 each pass vertically, and the lower ends of the multiple hollow column portions 45 are connected to the lower plate portion 44 so that the lower ends of the multiple hollow column portions 45 coincide with the multiple through holes in the lower plate portion 44. In addition, the upper ends of the multiple hollow column portions 45 may be connected to the lower surface of the dielectric member 56 so that the upper ends of the multiple hollow column portions 45 coincide with the multiple through holes 5d of the plasma source 5. The hollow portions of the multiple hollow column portions 45 and the through holes in the lower plate portion 44 correspond to through holes 4d that pass vertically through the first flow channel member 4. Each vertical pipe 65 of the second flow channel member 6 passes through each through hole 4d of the first flow channel member 4. Each through hole 4d has, for example, a circular shape in plan view.

[0095] Multiple first outlets 4c are also formed in the lower plate portion 44. In the example shown in Figure 2, the first outlets 4c and second outlets 6c are arranged alternately at equal intervals in the diagonal direction. In the example shown in Figure 2, in a plan view, one first outlet 4c is located at the midpoint of the diagonal of a rectangle whose vertices are the four second outlets 6c. Also, one second outlet 6c is located at the midpoint of the diagonal of a rectangle whose vertices are the four first outlets 4c.

[0096] <Department Head> Figure 7 is a schematic block diagram showing an example of the configuration of the control unit 9. The control unit 9 is an electronic circuit device and may have, for example, a data processing unit 91 and a storage unit 92. The data processing unit 91 may be an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit 92 may have a non-temporary storage unit 921 (e.g., ROM (Read Only Memory) or hard disk) and a temporary storage unit 922 (e.g., RAM (Random Access Memory)). The non-temporary storage unit 921 may store, for example, a program that defines the processing to be executed by the control unit 9. By executing this program, the data processing unit 9 can execute the processing defined in the program. Of course, some or all of the processing to be executed by the control unit 9 may be executed by hardware circuits such as logic circuits.

[0097] <Operation of the film deposition apparatus> Next, an example of the operation of the film deposition apparatus 100 will be outlined. First, an external transport device (not shown) carries the substrate W into the chamber 1 and passes it to the substrate holding unit 2. As a result, the substrate W is placed in a horizontal position on the susceptor 21 of the substrate holding unit 2. Next, the suction unit 7 sucks the gas from inside the chamber 1 to reduce the pressure inside the chamber 1 (pressure reduction process). Specifically, the control unit 9 causes the suction mechanism 72 to perform a suction operation. As a result, the gas inside the chamber 1 is sucked into the suction mechanism 72 through the suction tube 71, and the pressure inside the chamber 1 decreases. The suction unit 7 adjusts the pressure inside the chamber 1 so that it becomes a predetermined process pressure suitable for the film deposition process. The predetermined process pressure is, for example, 100 Pa or more and 500 Pa or less. The suction unit 7 adjusts the pressure inside the chamber 1 until the film deposition process is completed.

[0098] Next, the heater 8 heats the substrate W (heating step). Specifically, the control unit 9 causes the heater 8 to perform the heating operation. The heater 8 adjusts the temperature of the substrate W so that it reaches a predetermined temperature suitable for the film deposition process. The predetermined temperature is, for example, 600°C or higher and 1000°C or lower. The heater 8 adjusts the temperature of the substrate W until the film deposition process is completed.

[0099] Next, the substrate holding unit 2 rotates the substrate W around the rotation axis Q1 (rotation process). Specifically, the control unit 9 rotates the susceptor holding unit 22 using the rotation mechanism 23. As a result, the susceptor holding unit 22, the susceptor 21, and the substrate W rotate together around the rotation axis Q1. The substrate holding unit 2 continues to rotate the substrate W until the film deposition process is completed.

[0100] Next, the first gas supply unit 40 supplies the first raw material gas to the fluid head 3, the second gas supply unit 50 supplies the second raw material gas to the fluid head 3, and the plasma source 5 plasma-excites the first raw material gas (film formation process). Specifically, the control unit 9 opens valves 412, 422, and 502, and generates microwaves in the microwave generator 57. As a result, active species derived from the first raw material gas flow out from multiple first outlets 4c of the fluid head 3 toward the first main surface of the substrate W, and the second raw material gas flows out from multiple second outlets 6c of the fluid head 3 toward the first main surface of the substrate W.

[0101] The second raw material gas undergoes thermal decomposition on the first main surface of the substrate W, and the components generated by this thermal decomposition react with active species to form the target film on the first main surface of the substrate W. As a more specific example, an organometallic gas containing a group III element undergoes thermal decomposition, and the resulting group III element reacts with nitrogen radicals to grow a group III nitride semiconductor crystal on the first main surface of the substrate W.

[0102] When the target film is formed to a predetermined thickness, the control unit 9 terminates the film formation process. Specifically, the control unit 9 closes valves 412, 422, and 502 and stops the microwave output from the microwave generator 57. The control unit 9 also stops the operation of the rotating mechanism 23, heater 8, and suction unit 7.

[0103] Next, the transport device removes the substrate W from the chamber 1 (removal process). Specifically, the transport device removes the substrate W, which is placed on the susceptor 21, from the chamber 1.

[0104] <effect> As described above, during the film formation process, active species derived from the first raw material gas flow out toward the first main surface of the substrate W from multiple first outlets 4c, which are dispersed two-dimensionally within an overlapping region R0 that overlaps with the substrate W in a plan view. Similarly, the second raw material also flows out toward the first main surface of the substrate W from multiple second outlets 6c, which are dispersed two-dimensionally within the overlapping region R0. Therefore, the active species and the second raw material gas are supplied more uniformly to the first main surface of the substrate W, and as a result, the target film is formed more uniformly on the first main surface of the substrate W.

[0105] Furthermore, the plasma source 5 illustrated in Figures 1 to 6 is a flat plasma source whose horizontal size is larger than its vertical size, so it can generate plasma more uniformly over a wider area in a plan view. The plasma source 5 may generate plasma over an area wider than the overlapping region R0 in a plan view. This allows the plasma to supply active species more uniformly to the first main surface of the substrate W. Consequently, the film deposition apparatus 100 can form the target film more uniformly on the first main surface of the substrate W.

[0106] Furthermore, in the fluid head 3 illustrated in Figures 1 to 6, the second outlet 6c is formed at the tip 66 of the vertical pipe 65. This allows for a larger inner diameter of the vertical pipe 65 (i.e., a larger flow area of ​​the through-flow channel 6b2) while reducing the diameter of the second outlet 6c (i.e., a smaller opening area). A larger inner diameter of the vertical pipe 65 allows the second raw material gas to flow more easily through the vertical pipe 65. On the other hand, a smaller diameter of the second outlet 6c allows for a longer distance between the periphery of the second outlet 6c and the periphery of the first outlet 4c. This reduces the possibility of active species flowing out from the first outlet 4c reaching the second outlet 6c.

[0107] If many active species reach the second outlet 6c, they may react with the second raw material gas, and a compound may form on the inner surface of the tip portion 66 near the second outlet 6c. Such a compound film can cause fluctuations in the opening area of ​​the second outlet 6c, which can lead to variations in the flow rate and velocity of the second raw material gas flowing out from multiple second outlets 6c. This can result in non-uniformity of the target film on the substrate W. In the above example, the possibility of active species flowing out from the first outlet 4c reaching the second outlet 6c can be reduced, thereby reducing the likelihood of such problems occurring.

[0108] Furthermore, in the example shown in Figure 1, the vertical pipe 65 penetrates the plasma source 5 and the first flow channel member 4, and its tip 66 is located vertically below the first flow channel member 4. In other words, each second outlet 6c formed at the tip 66 is located vertically below each first outlet 4c formed at the bottom of the first flow channel member 4. To put it another way, each second outlet 6c is located closer to the susceptor 21 than each first outlet 4c. This also increases the distance between the second outlet 6c and the first outlet 4c. Therefore, the possibility of active species flowing out from the first outlet 4c reaching the second outlet 6c can be further reduced.

[0109] <Partitioning material> Within the fluid head 3, the plasma chamber 4b and the gas flow path 6b are separated from each other. In the example described above, the plasma chamber 4b and the gas flow path 6b are separated from each other by the lower plate portion 64 of the second flow path member 6, the plasma source 5, the vertical pipe 65 of the second flow path member 6, and the hollow column portion 45 of the first flow path member 4. In other words, these members function as partitioning members. However, this is not necessarily the case. For example, the plasma source 5 can function as a partitioning member separating the plasma chamber 4b and the flow path space 6b1 of the gas flow path 6b, so the lower plate portion 64 does not necessarily need to be provided. In this case, the lower end periphery of the side wall 63 of the second flow path member 6 can be connected to the plasma source 5. Also, the vertical pipe 65 and the hollow column portion 45 can function as partitioning members separating the plasma chamber 4b and the through-flow path 6b2 of the gas flow path 6b. For this reason, one of the vertical pipe 65 and the hollow column portion 45 may be omitted. Specifically, for example, the portion of the vertical pipe 65 other than the protruding portion that extends beyond the first flow channel member 4 may be omitted. In this case, the protruding portion can be connected to the first flow channel member 4. Alternatively, the hollow column portion 45 may be omitted. In this case, the inner circumferential surface of each through-hole in the lower plate portion 44 of the first flow channel member 4 can be connected to the corresponding outer circumferential surface of the vertical pipe 65.

[0110] <Shield> The fluid head 3 may include a conductive shield provided at least between the plasma chamber 4b and the through-flow channel 6b2. For example, at least the portion of each vertical tube 65 of the second flow channel member 6 that is horizontally adjacent to the plasma chamber 4b may include a conductive material such as metal. In other words, the portion may be made of a conductive material such as metal. The conductive material of each vertical tube 65 has a cylindrical shape that surrounds the through-flow channel 6b2. The conductive material can function as a conductive shield that electrically shields the plasma chamber 4b and the through-flow channel 6b2 from each other.

[0111] The conductive members of each vertical pipe 65 may be grounded. This can improve shielding performance. For example, the entire second flow channel member 6 may be made of a conductive material such as metal, and the second flow channel member 6 may be grounded through predetermined wiring.

[0112] With this structure, although the plasma source 5 generates an electric field for the plasma in the plasma chamber 4b, the conductive shield (the conductive member mentioned above) makes it difficult for the electric field to be generated inside the vertical pipe 65 of the second flow channel member 6 (i.e., the through-flow channel 6b2). Since the plasma source 5 generates an electric field for the plasma vertically downward, almost no electric field for the plasma is generated in the space adjacent to the plasma source 5 horizontally and in the space vertically above the plasma source 5. However, if the plasma source 5 generates an electric field in these spaces, it is preferable for the entire second flow channel member 6 to be made of a conductive member. In this case, the entire second flow channel member 6 functions as a conductive shield. Therefore, the electric field is less likely to be generated throughout the gas flow channel 6b, and the electric field is less likely to act on the second raw material gas. Consequently, the application of an unnecessary electric field to the second raw material gas can be suppressed, and the plasmaization of the second raw material gas can be suppressed. Furthermore, if a carrier gas is supplied to the fluid head 3 together with the second raw material gas, the plasmaization of the carrier gas can also be suppressed.

[0113] <Other examples of fluid heads> Figure 8 is a schematic diagram showing another example of the fluid head 3 according to the first embodiment. In the example of Figure 8, the fluid head 3 also has a first inlet 4a, a plasma chamber 4b, a plurality of first outlets 4c, a second inlet 6a, a gas flow path 6b, and a plurality of second outlets 6c. However, in the example of Figure 8, the fluid head 3 includes a plasma source 5A and a flow path member 6A.

[0114] The flow channel member 6A has the same configuration as the second flow channel member 6, except for the presence or absence of a connection port 6d used to supply power to the plasma source 5A. The connection port 6d will be explained later.

[0115] Figure 9 is a schematic diagram showing the components of the fluid head 3 in Figure 8 in an exploded view, and Figure 10 is a schematic diagram showing the XX cross-section of Figure 9. In the example of Figure 9, the plasma source 5A is a hollow cathode discharge type plasma source and includes a first electrode 510 and a second electrode 521. The first electrode 510 and the second electrode 521 are formed of a conductive material such as metal. As shown in Figures 9 and 10, the first electrode 510 has a plate-like shape. In the example of Figure 10, the first electrode 510 has a circular shape concentric with the substrate W in a plan view. The diameter of the first electrode 510 may be greater than or equal to the diameter of the substrate W.

[0116] The first electrode 510 has multiple through-holes 512 through which multiple vertical pipes 65 of the flow channel member 6A each pass. Each through-hole 512 penetrates the first electrode 510 in the vertical direction. Each through-hole 512 has, for example, a circular shape in plan view.

[0117] Multiple recesses 511 are formed on the susceptor 21 side (in this case, the bottom surface) of the first electrode 510. The multiple recesses 511 are formed at positions different from the through holes 512. In the example of Figure 10, the multiple recesses 511 are distributed two-dimensionally at positions different from the multiple through holes 512 in the overlapping region R0 that overlaps with the substrate W in a plan view. The multiple recesses 511 may also be distributed in a region opposite to most of the overlapping region R0. As a more specific example, the multiple recesses 511 can be distributed in a circular region that has a diameter of at least half the diameter of the substrate W and is concentric with the substrate W.

[0118] In the examples of Figures 9 and 10, each recess 511 is formed in a columnar shape extending vertically, and in plan view, it has, for example, a circular shape. In the example of Figure 9, the depth of each recess 511 is greater than the thickness between the bottom surface of each recess 511 and the top surface of the first electrode 510. The portion of the first electrode 510 surrounding each recess 511 constitutes a so-called hollow cathode. In other words, the first electrode 510 forms a plurality of hollow cathodes that are distributed two-dimensionally in plan view. In the example of Figure 9, the recesses 511 face the first outlet 4c in a one-to-one vertical relationship.

[0119] The second electrode 521 is located on the susceptor 21 side relative to the first electrode 510. Here, the second electrode 521 is located vertically below the first electrode 510. The second electrode 521 has a plate-like shape and, in a plan view, for example, has a circular shape concentric with the substrate W. The diameter of the second electrode 521 may be greater than or equal to the diameter of the substrate W. The second electrode 521 has a shape similar to, for example, the lower plate portion 44 of the first flow channel member 4. The second electrode 521 is conductive and forms a so-called anode.

[0120] The second electrode 521 has multiple through-holes 523 through which multiple vertical pipes 65 of the flow channel member 6A each pass. The through-holes 523 penetrate the second electrode 521 vertically. Each through-hole 523 has, for example, a circular shape in plan view. The through-hole 512 of the first electrode 510 and the through-hole 523 of the second electrode 521 correspond to the through-hole 5d that penetrates the plasma source 5A.

[0121] In the example shown in Figure 9, a side wall 522 is erected around the periphery of the second electrode 521. The side wall 522 extends from the entire circumference of the periphery of the second electrode 521 toward the first electrode 510. The side wall 522 may be integrally constructed from the same material as the second electrode 521, or it may be constructed separately from the second electrode 521 using a different material. In this case, the side wall 522 is integrally constructed from the same material as the second electrode 521.

[0122] In the example shown in Figure 9, an insulating member 533 is provided between the periphery of the first electrode 510 and the side wall 522. The insulating member 533 ensures insulation between the first electrode 510 and the side wall 522. The insulating member 533 has a plate-like shape and a ring-like shape in plan view. The insulating member 533 prevents short circuits between the first electrode 510 and the second electrode 521.

[0123] The space enclosed by the first electrode 510, the second electrode 521, and the side wall 522 corresponds to the plasma chamber 4b. In other words, the first electrode 510, which is part of the plasma source 5A, is located between the flow channel space 6b1 and the plasma chamber 4b. A first inlet 4a is formed in part of the side wall 522, and a plurality of first outlets 4c are formed in the second electrode 521. Each first outlet 4c penetrates the second electrode 521 in a vertical direction.

[0124] A plasma voltage is applied between the first electrode 510 and the second electrode 521 by a plasma power supply 540. In the example shown in Figure 8, the first output terminal of the power supply 540 is electrically connected to the first electrode 510, and the second output terminal of the power supply 540 and the second electrode 521 are grounded. The power supply 540 outputs, for example, a high-frequency voltage. When this voltage is applied between the first electrode 510 and the second electrode 521, a plasma electric field is generated in the plasma chamber 4b between the first electrode 510 and the second electrode 521, and the first raw material gas in the plasma chamber 4b is converted into plasma. The activated species resulting from the plasma conversion flow out from a plurality of first outlets 4c.

[0125] Next, the flow channel member 6A will be described. Here, as an example, the flow channel member 6A is formed of a conductive material. This allows the flow channel member 6A to electrically shield the gas flow channel 6b from the outside, thereby suppressing the generation of an electric field for plasma in the gas flow channel 6b. When the flow channel member 6A is conductive, it is preferable that the fluid head 3 be provided with an insulating member 530 to insulate between the plasma source 5A and the flow channel member 6A, as illustrated in Figures 8 and 9. For example, as shown in Figure 9, the insulating member 530 includes a plate portion 531 and a plurality of cylindrical portions 532. The plate portion 531 has a plate-like shape and is provided between the hollow plate portion 61 of the flow channel member 6A and the first electrode 510 of the plasma source 5A. The plate portion 531 ensures insulation between the hollow plate portion 61 and the first electrode 510. In plan view, the plate portion 531 has, for example, a circular shape concentric with the substrate W. The diameter of the plate portion 531 is greater than or equal to the diameter of the hollow plate portion 61 and the first electrode 510. Multiple through holes are formed in the plate portion 531, and multiple vertical pipes 65 of the flow channel member 6A pass through each of these through holes.

[0126] Multiple cylindrical sections 532 have a cylindrical shape and are connected to the plate section 531 such that their upper ends coincide with each through-hole in the plate section 531. Multiple cylindrical sections 532 extend from the plate section 531 toward the susceptor 21. Multiple vertical pipes 65 of the flow path member 6A each pass through multiple cylindrical sections 532. The cylindrical sections 532 are interposed between the first electrode 510 and the vertical pipes 65, and between the second electrode 521 and the vertical pipes 65. Therefore, the cylindrical sections 532 can ensure insulation between the first electrode 510 and the vertical pipes 65, and also between the second electrode 521 and the vertical pipes 65. In other words, a short circuit between the first electrode 510 and the second electrode 521 through the vertical pipes 65 can be avoided.

[0127] In the example shown in Figure 8, the fluid head 3 has a power supply connection port 6d that leads to the first electrode 510. In a plan view, the connection port 6d is formed at a different position from the multiple vertical pipes 65 and penetrates vertically through the hollow plate portion 61 of the flow path member 6A and the plate portion 531 of the insulating member 530. In the example shown in Figure 9, the hollow plate portion 61 is also provided with a hollow column portion 67 that surrounds the connection port 6d. The hollow column portion 67 has a cylindrical shape and connects the upper plate portion 62 and the lower plate portion 64 such that its upper end coincides with a through hole formed in the upper plate portion 62 and its lower end coincides with a through hole formed in the lower plate portion 64. The through hole in the upper plate portion 62, the hollow column portion 67, and the through hole in the lower plate portion 64 correspond to the upper portion of the connection port 6d.

[0128] The first electrode 510 is electrically connected to one end of the wiring 541 at the connection port 6d, and the other end of the wiring 541 is electrically connected to the first output terminal of the power supply 540.

[0129] Figure 11 is a schematic diagram showing the XI-XI cross section of Figure 8. As shown in Figure 11, the fluid head 3 may have multiple connection ports 6d. The multiple connection ports 6d are formed at different relative positions in a plan view. For example, the multiple connection ports 6d may be formed at equal intervals in the circumferential direction. In the example of Figure 8, four connection ports 6d are formed at positions corresponding to each vertex of a virtual square.

[0130] The first electrode 510 is electrically connected to one end of the wiring 541 at each connection port 6d. Since the first electrode 510 is electrically connected to one end of multiple wirings 541 at multiple connection ports 6d, voltage is applied to the first electrode 510 at multiple locations. This makes the voltage distribution (potential distribution) of the first electrode 510 more uniform. Consequently, the plasma source 5A can generate plasma more uniformly in a plan view.

[0131] <Second Embodiment> The film deposition apparatus 100 according to the second embodiment has the same configuration as the first embodiment, except for the configuration of the fluid head 3. Hereinafter, the fluid head 3 according to the second embodiment will be referred to as the fluid head 3A.

[0132] Figure 12 is a schematic cross-sectional view showing an example of the configuration of a fluid head 3A according to a second embodiment. In the example shown in Figure 12, the fluid head 3A further includes a first flow channel member 4, a plasma source 5, a second flow channel member 6, and a cooling unit 30.

[0133] The cooling section 30 cools the plasma source 5. In the example shown in Figure 12, the cooling section 30 is provided between the hollow plate portion 61 of the second flow channel member 6 and the plasma source 5. The cooling section 30 has multiple through holes 30d through which multiple vertical pipes 65 (through-flow channels 6b2) of the second flow channel member 6 each pass.

[0134] Figure 13 is a schematic cross-sectional view showing an example of the configuration of the cooling unit 30. In the example shown in Figure 13, the cooling unit 30 is a refrigerant-type cooling unit and includes a heat-conducting member 31, refrigerant piping 32, and a refrigerant cooling unit 33.

[0135] The thermal conductive member 31 is made of a material having high thermal conductivity, such as metal. The thermal conductive member 31 has a plate-like shape and is provided in a position where its thickness direction is aligned with the vertical direction. In a plan view, the thermal conductive member 31 has a circular shape that is concentric with the substrate W, for example. The diameter of the thermal conductive member 31 may be greater than or equal to the diameter of the plasma source 5 (specifically the waveguide member 51). The thermal conductive member 31 is preferably in close contact with the waveguide member 51 of the plasma source 5.

[0136] The heat-conducting member 31 has a plurality of through holes 30d and a refrigerant flow path 30a. The plurality of through holes 30d are formed at positions opposite to the plurality of vertical pipes 65 and penetrate the heat-conducting member 31 in the vertical direction. The plurality of vertical pipes 65 of the second flow path member 6 each penetrate the plurality of through holes 30d of the cooling section 30.

[0137] In the example shown in Figure 13, the upstream and downstream ends of the refrigerant flow path 30a are formed on the side surface of the thermal conductive member 31. The refrigerant flow path 30a extends inside the thermal conductive member 31 so as not to interfere with the through hole 30d, and in the example shown in Figure 13, it is meandering.

[0138] The downstream end of refrigerant piping 32 is connected to the upstream end of refrigerant flow path 30a, and the upstream end of refrigerant piping 32 is connected to the downstream end of refrigerant flow path 30a. Refrigerants such as water circulate through refrigerant piping 32 and refrigerant flow path 30a.

[0139] The refrigerant cooling unit 33 cools the refrigerant flowing through the refrigerant piping 32. The refrigerant cooling unit 33 may be, for example, a heat pump unit. The low-temperature refrigerant cooled in the refrigerant cooling unit 33 exchanges heat with the thermal conductive member 31 in the refrigerant flow path 30a. As a result, the refrigerant receives heat from the thermal conductive member 31, cooling the thermal conductive member 31. The thermal conductive member 31 exchanges heat with the plasma source 5 and receives heat from the plasma source 5, thus cooling the plasma source 5. On the other hand, the refrigerant receives heat from the thermal conductive member 31, so the temperature of the refrigerant rises. This refrigerant is then cooled again in the refrigerant cooling unit 33.

[0140] As described above, in the fluid head 3A, the cooling unit 30 cools the plasma source 5. This suppresses the temperature rise of the plasma source 5. Therefore, thermal degradation occurring in the plasma source 5 and its surrounding components (for example, the first flow channel member 4) can be suppressed.

[0141] Furthermore, in the above example, the cooling unit 30 is located on the opposite side of the plasma source 5 from the susceptor 21. Therefore, the cooling unit 30 does not hinder the generation and supply of active species to the substrate W by the plasma source 5 and the first flow channel member 4. In addition, the cooling unit 30 can face the plasma source 5 over a wide area and cool the plasma source 5 over a wide area. Therefore, the cooling unit 30 can cool the plasma source 5 more effectively.

[0142] Furthermore, since the cooling unit 30 is provided between the hollow plate portion 61 and the plasma source 5, it can effectively suppress heat conduction from the plasma source 5 to the hollow plate portion 61. This further reduces the possibility of thermal decomposition of the second raw material gas in the flow path space 6b1 within the hollow plate portion 61. The cooling unit 30 may also cool the hollow plate portion 61. For example, if the thermal conductive member 31 is in close contact with the lower plate portion 64 of the hollow plate portion 61, the cooling unit 30 can effectively cool the hollow plate portion 61.

[0143] Furthermore, the cooling unit 30 does not necessarily have to be located between the hollow plate portion 61 and the plasma source 5. For example, the cooling unit 30 may be located on the opposite side of the hollow plate portion 61 from the plasma source 5, in this case, vertically above the hollow plate portion 61. Alternatively, the first cooling unit 30 may be located vertically above the hollow plate portion 61, and the second cooling unit 30 may be located between the hollow plate portion 61 and the plasma source 5.

[0144] Furthermore, in the fluid head 3 of Figure 8, a cooling section 30 for cooling the plasma source 5A may be provided. For example, the cooling section 30 may be provided between the hollow plate portion 61 of the flow path member 6A and the plasma source 5A.

[0145] <Third Embodiment> An example of the configuration of the film deposition apparatus 100 according to the third embodiment is the same as that of the first or second embodiment. However, in the third embodiment, the configuration of the flow path of the fluid head 3 differs from that of the fluid head 3 according to the first or second embodiment.

[0146] Figure 14 is a schematic cross-sectional view showing an example of the configuration of the second flow channel member 6 of the fluid head 3 according to the third embodiment. In the example of Figure 14, a plurality of second inlets 6a are formed in the side wall 63 of the second flow channel member 6. The plurality of second inlets 6a are formed in the side wall 63 at approximately equal intervals in the circumferential direction. With this structure, the second raw material gas flows into the gas flow channel 6b (specifically the flow channel space 6b1) from the plurality of second inlets 6a. As a result, the flow of the second raw material gas in the gas flow channel 6b becomes more uniform, and the second raw material gas flows out more uniformly from the plurality of second outlets 6c.

[0147] Incidentally, among the multiple second outlets 6c, the outermost second outlets 6c are closer to one of the second inlets 6a than the central second outlets 6c. Therefore, in terms of the length of the flow path for the second raw material gas, the second raw material gas is more likely to reach the outermost second outlets 6c and less likely to reach the central second outlets 6c. In other words, in terms of the length of the flow path, the second raw material gas is more likely to flow out from the outermost second outlets 6c and less likely to flow out from the central second outlets 6c. Therefore, in terms of the length of the flow path, the second raw material gas can flow out from the outermost second outlets 6c at a slightly larger flow rate than from the central second outlets 6c.

[0148] Therefore, in the example shown in Figure 14, the opening area of ​​the central second outlet 6c is set to be larger than the opening area of ​​the outermost second outlet 6c. For example, the opening area of ​​all the second outlets 6c within the central region R1 of the overlapping region R0 is larger than the opening area of ​​all the second outlets 6c within the outermost region R2 of the overlapping region R0, which is outside the central region R1. As a result, in terms of the size of the opening area, the second raw material gas is less likely to flow out from the outermost second outlet 6c, and more likely to flow out from the central second outlet 6c.

[0149] Therefore, variations in the flow rate of the second raw material gas flowing out from the second outlets 6c on the central and outer sides can be reduced. In other words, the second raw material gas flows out more uniformly from multiple second outlets 6c.

[0150] In the example shown in Figure 14, the flow area of ​​the central through-channel 6b2 is larger than that of the outermost through-channel 6b2. As a more specific example, the flow area of ​​all through-channels 6b2 within the central region R1 is larger than that of all through-channels 6b2 within the outer region R2. In other words, the flow area of ​​each vertical pipe 65 within the central region R1 is larger than that of each vertical pipe 65 within the outer region R2. This reduces variations in the flow rate of the second raw material gas among the multiple through-channels 6b2. Consequently, the second raw material gas flows out more uniformly from the multiple second outlets 6c.

[0151] Furthermore, in order to reduce the variation in the second raw material gas among multiple second outlets 6c, it is not always necessary to set the opening area of ​​the central second outlet 6c to be larger than the opening area of ​​the outermost second outlets 6c. Here, we will explain by introducing the opening ratio. The opening ratio is the ratio of the sum of the opening areas of the second outlets 6c within a predetermined region to the area of ​​that predetermined region. The larger the opening ratio, the easier it is for the second raw material gas to flow through the second outlets 6c, so it is sufficient to make the opening ratio of the central second outlet 6c larger than the opening ratio of the outermost second outlets 6c.

[0152] Figure 15 is a schematic cross-sectional view showing another example of the configuration of the second flow path member 6 of the fluid head 3 according to the third embodiment. In the example of Figure 15, the pitch between the second outlets 6c located in the central region R1 is narrower than the pitch between the second outlets 6c located in the outer peripheral region R2. Therefore, the opening ratio of the second outlets 6c in the central region R1 is greater than the opening ratio of the second outlets 6c in the outer peripheral region R2. Consequently, variations in the flow rate of the second raw material gas flowing out from the second outlets 6c on the central and outer sides can be reduced. In other words, the second raw material gas flows out more uniformly from the multiple second outlets 6c.

[0153] Figure 16 is a schematic cross-sectional view showing an example of the configuration of the fluid head 3 according to the third embodiment. In the example of Figure 16, the second inlet 6a is formed not only on the side wall 63 of the second flow channel member 6 but also on the upper plate portion 62. Specifically, the second inlet 6a is formed in the central part of the upper plate portion 62. In other words, the second inlet 6a is formed in the upper part of the central part of the flow channel space 6b1. The second inlet 6a of the upper plate portion 62 is formed, for example, at a position aligned vertically with the center of the substrate W.

[0154] According to this structure, the second raw material gas flows into the gas flow path 6b (more specifically, the flow path space 6b1) not only from the multiple second inlets 6a on the sides, but also from the second inlet 6a above the central part. This allows for further homogenization of the flow of the second raw material gas within the flow path space 6b1 of the gas flow path 6b. Consequently, the second raw material gas flows out even more uniformly from the multiple second outlets 6c.

[0155] The opening ratio of the first outlet 4c may be set in the same way as that of the second outlet 6c. Figure 17 is a schematic cross-sectional view showing an example of the configuration of the first flow channel member 4 of the fluid head 3 according to the third embodiment. In the example of Figure 17, a plurality of first inlets 4a are formed in the side wall 43 of the first flow channel member 4. The plurality of first inlets 4a are formed in the side wall 43 at approximately equal intervals in the circumferential direction. With this structure, the first raw material gas flows into the plasma chamber 4b from the plurality of first inlets 4a. As a result, the flow of the first raw material gas in the plasma chamber 4b becomes more uniform, and the active species originating from the first raw material gas flow out more uniformly from the plurality of first outlets 4c.

[0156] In the example shown in Figure 17, the opening ratio of the central first outlet 4c is set to be larger than that of the outermost first outlet 4c. For example, in a plan view, the opening area of ​​all the first outlets 4c in the central region R1 is larger than the opening area of ​​all the first outlets 4c in the outermost region R2. Therefore, in terms of the size of the opening area, active species derived from the first raw material gas are less likely to flow out from the outermost first outlet 4c, and more likely to flow out from the central first outlet 4c. Consequently, variations in the flow rate of active species flowing out from the central and outermost first outlets 4c can be reduced. In other words, active species flow out more uniformly from multiple first outlets 4c.

[0157] Furthermore, the pitch of the first outlet 4c on the central side may be set to be narrower than the pitch of the first outlet 4c on the outer side.

[0158] Furthermore, although the above example described a fluid head 3 including a first flow channel member 4, a plasma source 5, and a second flow channel member 6, the same applies to a fluid head 3 including a plasma source 5A and a flow channel member 6A.

[0159] <Fourth Embodiment> An example of the configuration of the film deposition apparatus 100 according to the fourth embodiment is the same as the configuration of any of the first to third embodiments. However, in the fourth embodiment, the configuration of the second gas supply unit 50 differs from that of the second gas supply unit 50 according to the first to third embodiments. The second gas supply unit 50 can switch between a state in which both the second raw material gas and the carrier gas are supplied to the fluid head 3, and a state in which only the carrier gas is supplied to the fluid head 3 without supplying the second raw material gas. The carrier gas referred to here is a gas for transporting the second raw material gas and is an inert gas. As the inert gas, for example, at least one of a rare gas such as argon gas and nitrogen gas can be applied.

[0160] Figure 18 is a schematic diagram showing an example of the configuration of the second gas supply unit 50 according to the fourth embodiment. In the example of Figure 18, the second gas supply source 504 includes a gas supply pipe 5041, a gas supply pipe 5042, a bypass pipe 5043, a switching unit 5044, and a constant temperature bath 5058.

[0161] The constant temperature bath 5058 is a sealed container that stores the liquid second raw material gas (hereinafter referred to as the second raw material liquid). The constant temperature bath 5058 contains a heat source, which heats the second raw material liquid. This promotes the evaporation of the second raw material liquid, and the second raw material gas fills the space within the constant temperature bath 5058 vertically above the second raw material liquid.

[0162] The upstream end of the gas supply pipe 5041 is connected to the constant temperature bath 5058. Specifically, the upstream end of the gas supply pipe 5041 opens vertically above the second raw material liquid inside the constant temperature bath 5058. The downstream end of the gas supply pipe 5041 is connected to the upstream end of the second gas supply pipe 501.

[0163] The downstream end of the gas supply pipe 5042 is connected to the constant temperature bath 5058. In the example shown in Figure 18, the downstream end of the gas supply pipe 5042 is immersed in the second raw material liquid inside the constant temperature bath 5058. In other words, the downstream end of the gas supply pipe 5042 is open in the second raw material liquid. The upstream end of the gas supply pipe 5042 is connected to the carrier gas supply source 5049. The carrier gas supply source 5049 includes a storage section (not shown) for storing carrier gas.

[0164] The upstream end of the bypass pipe 5043 is connected to the middle of the gas supply pipe 5042, and the downstream end of the bypass pipe 5043 is connected to the upstream end of the second gas supply pipe 501.

[0165] The switching unit 5044 is controlled by the control unit 9 and switches between the first connection state and the second connection state, which will be described below. The first connection state is a connection state in which carrier gas from the carrier gas supply source 5049 is supplied to the upstream end of the second gas supply pipe 501 through the gas supply pipe 5042, the constant temperature bath 5058, and the gas supply pipe 5041. In the first connection state, the carrier gas flows into the constant temperature bath 5058. As a result, the second raw material gas and carrier gas inside the constant temperature bath 5058 flow into the upstream end of the second gas supply pipe 501 through the gas supply pipe 5041. Therefore, in the first connection state, the second raw material gas and carrier gas are supplied to the fluid head 3 through the second gas supply pipe 501. Consequently, the second raw material gas and carrier gas flow out from the multiple second outlets 6c of the fluid head 3 toward the first main surface of the substrate W.

[0166] The second connection state is one in which carrier gas from the carrier gas supply source 5049 is supplied to the upstream end of the second gas supply pipe 501 through the bypass pipe 5043. In the second connection state, the carrier gas flows into the upstream end of the second gas supply pipe 501, bypassing the constant temperature bath 5058. Therefore, in the second connection state, the second raw material gas is not supplied to the fluid head 3, and only the carrier gas is supplied to the fluid head 3. As a result, only the carrier gas flows out from the multiple second outlets 6c of the fluid head 3 toward the first main surface of the substrate W.

[0167] In the example shown in Figure 18, the switching unit 5044 includes valves 5045, 5046, and 5047. Valve 5045 is interposed in the gas supply pipe 5041, valve 5046 is interposed in the portion of the gas supply pipe 5042 between the bypass pipe 5043 and the constant temperature bath 5058, and valve 5047 is interposed in the bypass pipe 5043. When valve 5047 is closed and valves 5045 and 5046 are open, the switching unit 5044 can achieve a first connection state. When valve 5047 is open and valves 5045 and 5046 are closed, the switching unit 5044 can achieve a second connection state.

[0168] <Operation of the film deposition apparatus> Next, an example of the operation of the film deposition apparatus 100 according to the fourth embodiment will be described. Figure 19 is a flowchart illustrating an example of the operation of the film deposition apparatus 100 according to the fourth embodiment. In other words, Figure 19 is a flowchart illustrating an example of a film deposition method.

[0169] First, the substrate W is transported into the chamber 1 by an external transport device (Step S1: Loading process). This places the substrate W on the susceptor 21 in a horizontal position. Next, the suction unit 7 sucks gas from inside the chamber 1 to reduce the pressure inside the chamber 1 (Step S2: Pressure reduction process), and the heater 8 heats the substrate W (Step S3: Heating process). Next, the substrate holding unit 2 rotates the substrate W around the rotation axis Q1 (Step S4: Rotation process). Pressure adjustment in the chamber 1 by the suction unit 7, temperature adjustment of the substrate W by the heater 8, and rotation of the substrate W by the substrate holding unit 2 may be continued until the film deposition process is completed.

[0170] Next, the first gas supply unit 40 supplies the first raw material gas to the fluid head 3, the second gas supply unit 50 supplies the carrier gas to the fluid head 3 without supplying the second electrolytic gas, and the plasma source 5 generates an electric field for the plasma (step S5: initial plasma process). Specifically, first, the control unit 9 realizes the second connection state in the switching unit 5044 and opens the valve 502. As a result, the second gas supply unit 50 supplies the carrier gas to the fluid head 3 without supplying the second raw material gas. Therefore, the second raw material gas does not flow out of the multiple second outlets 6c of the fluid head 3, while the carrier gas flows out of the multiple second outlets 6c. The control unit 9 also opens valves 412 and 422. As a result, the first gas supply unit 40 supplies the first raw material gas, which includes nitrogen gas and hydrogen gas, to the fluid head 3. As a result, the first raw material gas flows into the plasma chamber 4b of the fluid head 3. The control unit 9 generates an electric field for plasma in the plasma source 5, causing the first raw material gas to become plasma in the plasma chamber 4b. The active species generated by this plasma formation flow out from multiple first outlets 4c.

[0171] Immediately after the plasma source 5 starts operating, the plasma is not stable. In other words, immediately after the plasma source 5 starts operating, the plasma may not be generated spatially uniformly in a plan view, but rather locally. Therefore, in the initial plasma process, the second gas supply unit 50 does not yet supply the second raw material gas to the fluid head 3, but instead supplies the carrier gas to the fluid head 3. For this reason, in the initial plasma process, although the plasma generation of the first raw material gas is starting, the formation of the target film on the first main surface of the substrate W does not begin until the plasma stabilizes.

[0172] Furthermore, in the initial plasma process, carrier gas flows out from the second outlet 6c of the fluid head 3, which prevents active species that have flowed out from the first outlet 4c from entering the gas channel 6b through the second outlet 6c. In other words, it is possible to prevent unwanted active species from entering the gas channel 6b. If active species were to enter the gas channel 6b, in the next process (film formation process) described later, when the second raw material gas flows into the gas channel 6b, the second raw material gas would react with the active species, potentially causing unwanted substances to precipitate on the inner wall of the second channel member 6. Such precipitation is undesirable because it would cause fluctuations in the flow area of ​​the gas channel 6b.

[0173] In contrast, in the fourth embodiment, the carrier gas flows out from the second outlet 6c during the initial plasma process. This makes it possible to suppress fluctuations in the flow path area of ​​the gas flow path 6b.

[0174] After a predetermined period has elapsed since the start of the initial plasma process, the second gas supply unit 50 supplies the second raw material gas and carrier gas to the fluid head 3 (step S6: film formation process). The predetermined period is longer than the period required for the plasma to stabilize, and is set in advance, for example. In other words, the second gas supply unit 50 starts supplying the second raw material gas after the plasma has stabilized. More specifically, the control unit 9 causes the switching unit 5044 to achieve the first connection state. As a result, the second gas supply unit 50 supplies the second raw material gas and carrier gas to the fluid head 3, and the second raw material gas and carrier gas flow out from the multiple second outlets 6c of the fluid head 3.

[0175] In other words, during the film formation process, the fluid head 3 allows active species to flow out more uniformly from multiple first outlets 4c, while simultaneously allowing the second raw material gas to flow out more uniformly from multiple second outlets 6c. The second raw material gas is thermally decomposed on the first main surface of the substrate W, and the components generated by this thermal decomposition react with the active species to form the target film on the first main surface of the substrate W.

[0176] In the film deposition process, once the target film is formed to a predetermined thickness, the control unit 9 terminates the film deposition process. Specifically, the control unit 9 closes valves 412 and 422 of the first gas supply unit 40 and valve 502 of the second gas supply unit 50, stopping the operation of the plasma source 5. The control unit 9 also stops the operation of the rotating mechanism 23, the heater 8, and the suction unit 7.

[0177] Next, the transport device unloads the substrate W from the chamber 1 (Step S7: Unloading process). Specifically, the external transport device unloads the substrate W, which is placed on the susceptor 21, from the chamber 1.

[0178] As described above, in the fourth embodiment, the second gas supply unit 50 supplies carrier gas to the fluid head 3 without supplying the second raw material gas for a predetermined period from the time the plasma source 5 is activated while the first gas supply unit 40 supplies the first raw material gas (initial plasma process), and after the predetermined period has elapsed, it supplies the second raw material gas and carrier gas to the fluid head 3 (film formation process). Therefore, during the predetermined period when the plasma is unstable, the film formation process of the target film on the first main surface of the substrate W is not started, and non-uniformity of the film thickness of the target film can be suppressed. Moreover, since carrier gas flows out from the second outlet 6c during the predetermined period, it is also possible to suppress the inflow of active species that have flowed out from the first outlet 4c into the second outlet 6c.

[0179] As described above, the film deposition apparatus 100 has been described in detail, but the above description is illustrative in all respects, and the film deposition apparatus 100 is not limited thereto. It is understood that countless modifications not illustrated can be envisioned without falling outside the scope of this disclosure. The components described in each of the above embodiments and modifications can be combined or omitted as appropriate, as long as they do not contradict each other.

[0180] For example, in the above example, a gas containing a group V element was applied as the first raw material gas, and an organometallic gas containing a group III element was applied as the second raw material gas. As a result, the film deposition apparatus 100 can form a group III-V compound semiconductor film as the target film on the first main surface of the substrate W. However, it is not necessarily limited to this. For example, oxygen gas may be applied as the first raw material gas, and silane gas may be applied as the second raw material gas. In this case, the film deposition apparatus 100 can form a silicon oxide film as the target film on the first main surface of the substrate W. [Explanation of Symbols]

[0181] 1 Chamber 100 Film deposition equipment 21. Mounting platform (suscepter) 3.3A Fluid Head 30 Cooling section 40. First Gas Supply Department 4a 1st inlet 4b Plasma Room 4c 1st outlet 5.5A plasma source 50 Second Gas Supply Department 65 Conductive shield (vertical tube) 6a 2nd inlet 6b Gas flow path 6b1 Flow channel space 6b2 Through-channel 6c 2nd outlet 8 Heaters R0 Overlapping area R1 central area R2 outer area W board

Claims

1. Chamber and, A mounting platform is provided inside the chamber on which a substrate is placed, Within the chamber, a fluid head is provided at a position facing the first main surface of the substrate placed on the aforementioned stand, The fluid head is One or more first inlets, A plasma chamber into which the first raw material gas flows through the first inlet, A plasma source for generating plasma from the first raw material gas in the plasma chamber, Multiple first outlets are arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, while communicating with the plasma chamber, and through which active species generated by the plasmaification of the first raw material gas flow out toward the first main surface of the substrate, One or more second inlets, The second raw material gas flows in through the second inlet, and the gas flow path is separated from the plasma chamber, Multiple second outlets are arranged in a two-dimensional distribution in the overlapping region, communicating with the gas flow path and at positions different from the multiple first outlets, through which the second raw material gas flows out toward the first main surface of the substrate. Includes, The aforementioned gas flow path is A flow path space located on the opposite side of the plasma chamber from the aforementioned stand, through which the second raw material gas flows in, A plurality of through-channels extending from the aforementioned channel space and penetrating the plasma chamber It has, Each of the aforementioned multiple through-flow channels has a plurality of second outlets formed at its tip. A film deposition apparatus comprising a fluid head including a conductive shield provided between each of the plurality of through-flow channels and the plasma chamber.

2. A chamber and A mounting platform is provided inside the chamber on which a substrate is placed, Within the chamber, a fluid head is provided at a position facing the first main surface of the substrate placed on the aforementioned stand, The fluid head is One or more first inlets, A plasma chamber into which the first raw material gas flows through the first inlet, A plasma source for generating plasma from the first raw material gas in the plasma chamber, Multiple first outlets are arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, while communicating with the plasma chamber, and through which active species generated by the plasmaification of the first raw material gas flow out toward the first main surface of the substrate, One or more second inlets, The second raw material gas flows in through the second inlet, and the gas flow path is separated from the plasma chamber, Multiple second outlets are arranged in a two-dimensional distribution in the overlapping region, communicating with the gas flow path and at positions different from the multiple first outlets, through which the second raw material gas flows out toward the first main surface of the substrate. Includes, The aforementioned gas flow path is A flow path space located on the opposite side of the plasma chamber from the aforementioned stand, through which the second raw material gas flows in, A plurality of through-channels extending from the aforementioned channel space and penetrating the plasma chamber It has, Each of the aforementioned multiple through-flow channels has a plurality of second outlets formed at its tip. A film deposition apparatus in which the opening area of ​​each of the plurality of second outlets is smaller than the flow area of ​​each of the plurality of through-flow channels.

3. A chamber and A mounting platform is provided inside the chamber on which a substrate is placed, Within the chamber, a fluid head is provided at a position facing the first main surface of the substrate placed on the aforementioned stand, A heater that heats the substrate from the second main surface side of the substrate and Equipped with, The fluid head is One or more first inlets, A plasma chamber into which the first raw material gas flows through the first inlet, A plasma source for generating plasma from the first raw material gas in the plasma chamber, Multiple first outlets are arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, while communicating with the plasma chamber, and through which active species generated by the plasmaification of the first raw material gas flow out toward the first main surface of the substrate, One or more second inlets, The second raw material gas flows in through the second inlet, and the gas flow path is separated from the plasma chamber, Multiple second outlets are arranged in a two-dimensional distribution in the overlapping region, communicating with the gas flow path and at positions different from the multiple first outlets, through which the second raw material gas flows out toward the first main surface of the substrate. Includes, The aforementioned gas flow path is A flow path space located on the opposite side of the plasma chamber from the aforementioned stand, through which the second raw material gas flows in, A plurality of through-channels extending from the aforementioned channel space and penetrating the plasma chamber It has, Each of the aforementioned multiple through-flow channels has a plurality of second outlets formed at its tip. At least a portion of the plasma source is provided between the flow channel space and the plasma chamber, and is penetrated by the plurality of through-flow channels, The fluid head further includes a cooling section for cooling the plasma source, The cooling section is provided between the flow channel space and the plasma source and is penetrated by the plurality of through-flow channels in the film deposition apparatus.

4. A film deposition apparatus according to claim 3, The aforementioned plasma source is a surface wave plasma source or a hollow cathode discharge type plasma source in a film deposition apparatus.

5. A film deposition apparatus according to any one of claims 1 to 4, The first inlet is formed on the side of the plasma chamber, A film deposition apparatus in which, among the plurality of first outlets, the aperture ratio of the first outlet located in the central region of the overlapping region is greater than the aperture ratio of the first outlet located in the outer peripheral region outside the central region of the overlapping region.

6. A film deposition apparatus according to any one of claims 1 to 4, The second inlet is formed on the side of the gas flow path, A film deposition apparatus in which, among the plurality of second outlets, the aperture ratio of the second outlet located in the central region of the overlapping region is greater than the aperture ratio of the second outlet located in the outer peripheral region outside the central region of the overlapping region.

7. A film deposition apparatus according to any one of claims 1 to 4, A film deposition apparatus wherein the second inlet is formed in the upper part of the central portion of the gas flow path.

8. A film deposition apparatus, Chamber and, A mounting platform is provided inside the chamber on which a substrate is placed, Within the chamber, a fluid head is provided at a position facing the first main surface of the substrate placed on the aforementioned stand, The fluid head is One or more first inlets, A plasma chamber into which the first raw material gas flows through the first inlet, A plasma source for generating plasma from the first raw material gas in the plasma chamber, Multiple first outlets are arranged in a two-dimensionally dispersed manner in an overlapping region that overlaps with the first main surface of the substrate in a plan view, while communicating with the plasma chamber, and through which active species generated by the plasmaification of the first raw material gas flow out toward the first main surface of the substrate, One or more second inlets, The second raw material gas flows in through the second inlet, and the gas flow path is separated from the plasma chamber, Multiple second outlets are arranged in a two-dimensional distribution in the overlapping region, communicating with the gas flow path and at positions different from the multiple first outlets, through which the second raw material gas flows out toward the first main surface of the substrate. Includes, The aforementioned film deposition apparatus is A first gas supply unit that supplies the first raw material gas to the fluid head, A second gas supply unit that supplies the second raw material gas and an inert carrier gas for transporting the second raw material gas to the fluid head. Equipped with, The film deposition apparatus wherein the second gas supply unit supplies the carrier gas to the fluid head without supplying the second raw material gas for a predetermined period from the time the plasma source is activated while the first gas supply unit supplies the first raw material gas, and after the predetermined period has elapsed, supplies the second raw material gas and the carrier gas to the fluid head.

9. A film deposition apparatus according to any one of claims 1 to 4 and claim 8, The first raw material gas includes a gas having a Group 15 element, The second raw material gas contains an organometallic gas having a group 13 element, and is used in a film deposition apparatus.

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