Plating apparatus and plating method

Abstract

To provide a plating apparatus that corrects disorder in plating film thickness at a peripheral portion of a substrate to improve uniformity of the plating film thickness over the entire surface to be plated.SOLUTION: A plating module 400 comprises a plating tank 410 configured to contain a plating solution, an anode 430 disposed in the plating tank 410, a substrate holder 440 configured to hold a substrate Wf with a surface to be plated Wf-a facing downward, an elevating mechanism 443 configured to raise and lower the substrate holder 440, a rotation mechanism 447 configured to rotate the substrate holder 440, a shielding member 481 capable of shielding an electric field formed between the anode 430 and the substrate Wf, and a shielding mechanism 485 configured to switch and dispose the shielding member 481 among a reference position between the anode 430 and the substrate Wf, a shielding position where an electric field shielding area becomes larger than at the reference position, and a retracted position retracted from between the anode 430 and the substrate Wf.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] <0OO0004>The present application relates to a plating apparatus and a plating method.

Background Art

[0002] As an example of a plating apparatus, a cup-type electrolytic plating apparatus is known. The cup-type electrolytic plating apparatus immerses a substrate (for example, a semiconductor wafer) held by a substrate holder with the plating surface facing downward in a plating solution, and applies a voltage between the substrate and an anode to deposit a conductive film on the surface of the substrate.

[0003] In a cup-type electrolytic plating apparatus, it is known to shield the electric field formed between the anode and the substrate using a shielding member. For example, in Patent Document 1, when a specific part of the substrate rotates within a range of a predetermined rotation angle, an electrolytic plating apparatus that shields a specific part of the substrate only at a desired timing by moving a shielding member between the specific part of the substrate and the anode is disclosed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, there is room for improvement in the conventional electrolytic plating apparatus in terms of correcting the unevenness of the plating film thickness at the peripheral portion of the substrate and improving the uniformity of the plating film thickness over the entire plating surface.

[0001] 0> In other words, the plating thickness at the periphery of the plated surface of the substrate can be locally irregular due to various influences such as uneven power supply from the contacts provided on the substrate holder, uneven seed thickness, and pattern shape. For example, at the periphery of the substrate, there may be a mixture of areas with standard plating thickness, areas that are thicker than standard, and areas that are thinner than standard. In addition, the overall plating thickness at the periphery of the substrate may be thicker or thinner than that of a standard substrate.

[0007] Therefore, one of the objectives of this invention is to correct the irregularities in the plating thickness at the peripheral edges of the substrate and improve the uniformity of the plating thickness across the entire plated surface. [Means for solving the problem]

[0008] According to one embodiment, a plating apparatus is disclosed, which includes a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with the surface to be plated facing downward, a lifting mechanism configured to raise and lower the substrate holder, a rotating mechanism configured to rotate the substrate holder, a shielding member capable of shielding the electric field formed between the anode and the substrate, and a shielding mechanism configured to switch the position of the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view showing the overall configuration of the plating apparatus according to this embodiment. [Figure 2] Figure 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. [Figure 3] Figure 3 is a schematic vertical cross-sectional view showing the configuration of a plating module according to one embodiment, and shows the state in which the shielding member has moved to the reference position. [Figure 4]Figure 4 is a schematic vertical cross-sectional view showing the configuration of a plating module according to one embodiment, and shows the state in which the shielding member has moved to the shielding position. [Figure 5] Figure 5 is a schematic vertical cross-sectional view showing the configuration of a plating module according to one embodiment, and shows the shielding member in a retracted position. [Figure 6] Figure 6 is a schematic plan view showing the shielding member positioned in the retracted position, the reference position, and the shielding position. [Figure 7] Figure 7 is a schematic plan view illustrating an example of switching the placement position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. [Figure 8] Figure 8 is a flowchart of a plating method using a plating module according to one embodiment. [Figure 9] Figure 9 is a schematic plan view illustrating an example of switching the placement position of shielding members depending on the type of substrate. [Figure 10] Figure 10 is a flowchart of a plating method using a plating module according to one embodiment. [Figure 11] Figure 11 is a plan view showing multiple regions included in a resistor of one embodiment. [Figure 12] Figure 12 schematically shows an example of the plating thickness when the position of the shielding member is adjusted according to the distribution of the plating thickness at the peripheral edge of the substrate. [Figure 13] Figure 13 is a plan view showing multiple regions included in a resistor of one embodiment. [Figure 14] Figure 14 is a schematic plan view illustrating an example of switching the placement position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. [Figure 15] Figure 15 shows the relationship between the timing of shielding the first portion Wf-e of the substrate and the rotation speed of the substrate holder. [Figure 16] Figure 16 is a schematic plan view illustrating an example of switching the placement position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. [Figure 17]FIG. 17 is a plan view schematically showing an example of switching the arrangement position of the shielding member according to the plating film thickness distribution at the peripheral portion of the substrate. [Figure 18] FIG. 18 is a plan view schematically showing an example of switching the arrangement position of the shielding member according to the plating film thickness distribution at the peripheral portion of the substrate. [Figure 19] FIG. 19 is a plan view schematically showing an example of switching the arrangement position of the shielding member according to the plating film thickness distribution at the peripheral portion of the substrate. [Figure 20] FIG. 20 is a plan view schematically showing an example of switching the arrangement position of the shielding member according to the plating film thickness distribution at the peripheral portion of the substrate.

MODE FOR CARRYING OUT THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted.

[0011] <Overall Configuration of Plating Apparatus> FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the present embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the present embodiment. As shown in FIGS. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer device 700, and a control module 800.

[0012] The load port 100 is a module for loading a substrate stored in a cassette such as a FOUP (not shown in the plating apparatus 1000) into the plating apparatus 1000 and unloading the substrate from the plating apparatus 1000 to the cassette. In the present embodiment, four load ports 100 are arranged side by side in the horizontal direction, but the number and arrangement of the load ports 100 are arbitrary. The transfer robot 110 is a robot for transferring substrates and is configured to transfer substrates between the load port 100, the aligner 120, the pre-wet module 200, and the spin rinse dryer 600. When transferring a substrate between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrate via a temporary placement table (not shown).

[0013] The aligner 120 is a module for aligning the positions of the orientation flat, notch, etc. of the substrate in a predetermined direction. In the present embodiment, two aligners 120 are arranged side by side in the horizontal direction, but the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 wets the surface to be plated of the substrate before plating with a processing liquid such as pure water or degassed water, thereby replacing the air inside the pattern formed on the substrate surface with the processing liquid. The pre-wet module 200 is configured to perform a pre-wet process that makes it easier to supply the plating liquid inside the pattern by replacing the processing liquid inside the pattern with the plating liquid during plating. In the present embodiment, two pre-wet modules 200 are arranged one above the other in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.

[0014] The pre-soak module 300 is configured to perform a pre-soak treatment, which involves etching away an oxide film with high electrical resistance present on the surface of a seed layer formed on the surface of a substrate to be plated before plating, using a treatment solution such as sulfuric acid or hydrochloric acid, thereby cleaning or activating the surface of the substrate. In this embodiment, two pre-soak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the pre-soak modules 300 are arbitrary. The plating module 400 performs the plating treatment on the substrate. In this embodiment, there are two sets of 12 plating modules 400, arranged in a vertical direction of 3 modules and horizontal direction of 4 modules, for a total of 24 plating modules 400, but the number and arrangement of the plating modules 400 are arbitrary.

[0015] The cleaning module 500 is configured to clean the substrate to remove any remaining plating solution after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after the cleaning process by rotating it at high speed. In this embodiment, two spin rinse dryers are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers are arbitrary. The transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000. The control module 800 is configured to control multiple modules of the plating apparatus 1000 and can consist of, for example, a general-purpose computer or a dedicated computer with an input / output interface with an operator.

[0016] An example of a series of plating processes performed by the plating apparatus 1000 will be described. First, substrates stored in cassettes are loaded into the load port 100. Next, the transport robot 110 removes the substrates from the cassettes in the load port 100 and transports them to the aligner 120. The aligner 120 aligns the orientation flats and notches of the substrates to a predetermined direction. The transport robot 110 then transfers the substrates, whose orientation has been aligned by the aligner 120, to the pre-wet module 200.

[0017] The pre-wetting module 200 pre-wets the substrate. The transport device 700 transports the pre-wetting substrate to the pre-soak module 300. The pre-soak module 300 performs a pre-soak treatment on the substrate. The transport device 700 transports the pre-soaked substrate to the plating module 400. The plating module 400 performs a plating treatment on the substrate.

[0018] The transport device 700 transports the plated substrates to the cleaning module 500. The cleaning module 500 cleans the substrates. The transport device 700 then transports the cleaned substrates to the spin rinse dryer 600. The spin rinse dryer 600 dries the substrates. The transport robot 110 receives the substrates from the spin rinse dryer 600 and transports the dried substrates to the cassette in the load port 100. Finally, the cassette containing the substrates is discharged from the load port 100.

[0019] <Configuration of the plating module> Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. Figure 3 is a schematic vertical cross-sectional view showing the configuration of a plating module in one embodiment, showing the state in which the shielding member has moved to the reference position. Figure 4 is a schematic vertical cross-sectional view showing the configuration of a plating module in one embodiment, showing the state in which the shielding member has moved to the shielding position. Figure 5 is a schematic vertical cross-sectional view showing the configuration of a plating module in one embodiment, showing the state in which the shielding member has moved to the retracted position.

[0020] As shown in Figures 3 to 5, the plating module 400 includes a plating tank 410 for containing a plating solution. The plating module 400 includes a membrane 420 that separates the inside of the plating tank 410 in the vertical direction. The inside of the plating tank 410 is divided into a cathode region 422 and an anode region 424 by the membrane 420.

[0021] Plating solution is filled into the cathode region 422 and the anode region 424, respectively. The plating module 400 includes a nozzle 426 opening toward the cathode region 422 and a supply source 428 for supplying the plating solution to the cathode region 422 via the nozzle 426. The plating module 400 also includes a mechanism for supplying the plating solution to the anode region 424, but this is not shown in the figure. An anode 430 is provided at the bottom of the plating tank 410 for the anode region 424. A resistor 450 is positioned opposite the membrane 420 in the cathode region 422, and this resistor 450 is attached to the plating tank 410 directly or indirectly. The resistor 450 is a component for ensuring uniformity of the plating process on the plated surface Wf-a of the substrate Wf, and is composed of a plate-shaped member with numerous holes formed therein.

[0022] The plating module 400 also includes a substrate holder 440 for holding the substrate Wf with the plated surface Wf-a facing downwards. The substrate holder 440 includes power supply contacts for supplying power to the substrate Wf from a power source (not shown). The substrate holder 440 also includes a seal ring holder 442 for supporting the outer edge of the plated surface Wf-a of the substrate Wf, and a frame 446 for holding the seal ring holder 442 in a substrate holder body (not shown). The substrate holder 440 also includes a back plate 444 for pressing the back surface of the plated surface Wf-a of the substrate Wf, and a shaft 448 attached to the back surface of the substrate pressing surface of the back plate 444.

[0023] The plating module 400 includes a lifting mechanism 443 for raising and lowering the substrate holder 440, and a rotation mechanism 447 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual axis of the shaft 448 (a virtual axis of rotation extending vertically through the center of the surface Wf-a to be plated). The lifting mechanism 443 and the rotation mechanism 447 can be implemented by known mechanisms such as motors. The plating module 400 uses the lifting mechanism 443 to plate the substrate The system is configured to perform a plating process on the plated surface Wf-a of the substrate Wf by immersing Wf in the plating solution in the cathode region 422 and applying a voltage between the anode 430 and the substrate Wf.

[0024] The plating module 400 includes a film thickness sensor 490 configured to measure the plating film thickness at the periphery of the substrate Wf. In this embodiment, the film thickness sensor 490 is mounted on a resistor 450 so as to face the periphery of the substrate Wf. The film thickness sensor 490 is configured to measure the plating film thickness at the periphery of the opposing substrate Wf during the plating process using any method such as optics, electric field, magnetic field, or electric potential. Since the substrate rotates during the plating process, the film thickness sensor 490 can measure the plating film thickness distribution along the circumferential direction of the periphery of the substrate.

[0025] The plating module 400 includes a shielding member 481 for shielding the electric field formed between the anode 430 and the substrate Wf when the module is positioned between the anode 430 and the substrate Wf. The shielding member 481 may be, for example, a shielding plate formed in the shape of a plate. The plating module 400 also includes a shielding mechanism 485 for moving the shielding member 481. The shielding mechanism 485 is configured to allow the position of the shielding member 481 to be switched. A specific example of the shielding mechanism 485 will be described below.

[0026] Figure 6 is a schematic plan view showing the shielding member positioned in the retracted position, the reference position, and the shielding position. Figure 6(A) shows the shielding member 481 in the reference position, Figure 6(B) shows the shielding member 481 in the shielding position, and Figure 6(C) shows the shielding member 481 in the retracted position.

[0027] As shown in Figures 3-5 and 6, the shielding mechanism 485 is configured to switch the position of the shielding member 481 between a reference position between the anode 430 and the substrate Wf, a shielding position where the electric field shielding area is larger than that of the reference position, and a retracted position where the shielding member 481 is moved away from the space between the anode 430 and the substrate Wf. As shown in Figures 6(A) to 6(C), the reference position is the position where the shielding member 481 and the substrate Wf overlap in a plan view, the shielding position is the position where the shielding member 481 and the substrate Wf overlap more than that of the reference position in a plan view, and the retracted position is the position where the shielding member 481 and the substrate Wf do not overlap in a plan view. By switching the shielding member 481 between these three positions—reference position, shielding position, and retracted position—the electric field shielding area is changed, and the plating thickness at the periphery of the substrate Wf is changed.

[0028] For example, the shielding mechanism 485 may be configured to switch the position of the shielding member 481 between a reference position, a shielding position, and a retracted position, according to the distribution of the plating film thickness at the periphery of the substrate Wf measured by the film thickness sensor 490. In this embodiment, an example is shown in which the shielding mechanism 485 switches the position of the shielding member 481 between three positions, but the shielding mechanism 485 is not limited to this, and the shielding mechanism 485 can also switch the position of the shielding member 481 between four or more positions. Furthermore, in this specification, when the shielding mechanism 485 positions the shielding member 481 in a predetermined position, it does not simply mean passing the shielding member 481 through the predetermined position in the process of moving it, but rather means stopping the shielding member 481 in the predetermined position.

[0029] Figure 7 is a schematic plan view showing an example of switching the position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figures 7(A) to 7(D) show how the position of the shielding member is switched as the substrate Wf rotates. As shown in Figures 7(A) to 7(D), as the substrate Wf rotates, the periphery of the substrate Wf moves sequentially closer to the shielding member 481. In the example in Figure 7, a first plating thickness (reference thickness), a second plating thickness that is thicker than the first plating thickness, and a third plating thickness that is thinner than the first plating thickness are formed at the periphery of the substrate Wf, and it is assumed that there is a disorder in the plating thickness at the periphery of the substrate Wf. The disorder in the plating thickness is due to uneven power supply from the contacts provided on the substrate holder 440, and the plating on the substrate Wf. This can be caused by various factors, such as uneven seed thickness on the surface and pattern shape on the plated surface of the substrate Wf.

[0030] As shown in Figure 7(A), the shielding mechanism 485 is configured to position the shielding member 481 in a reference position relative to the first peripheral edge Wf-b of the substrate Wf on which the first plating film thickness is formed. Specifically, when the first peripheral edge Wf-b of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 in the reference position. Also, as shown in Figure 7(B), the shielding mechanism 485 is configured to position the shielding member 481 in a shielding position relative to the second peripheral edge Wf-c of the substrate Wf on which the second plating film thickness is formed. Specifically, when the substrate Wf rotates and the second peripheral edge Wf-c of the substrate Wf approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 in the shielding position. Furthermore, as shown in Figure 7(C), when the substrate Wf rotates further and the first peripheral edge Wf-b approaches the shielding member 481 again, the shielding mechanism 485 positions the shielding member 481 in a reference position. Also, as shown in Figure 7(D), the shielding mechanism 485 is configured to position the shielding member 481 in a retracted position relative to the third peripheral edge Wf-d of the substrate Wf on which the third plating film thickness is formed. Specifically, when the substrate Wf rotates further and the third peripheral edge Wf-d approaches the shielding member 481, the shielding mechanism 485 positions the shielding member 481 in a retracted position. Note that while Figures 7(A) and 7(C) show an example where the substrate Wf held in the substrate holder 440 rotates in one direction at a constant speed, and Figures 7(B) and 7(D) show an example where the substrate Wf held in the substrate holder 440 rotates in one direction at a constant speed, the system is not limited to this.

[0031] According to this embodiment, by positioning the shielding member 481 in a shielding position relative to the second peripheral portion Wf-c, the formation of a plating film on the second peripheral portion Wf-c can be suppressed, thereby bringing the plating film thickness on the second peripheral portion Wf-c closer to the reference film thickness. On the other hand, by positioning the shielding member 481 in a retracted position relative to the third peripheral portion Wf-d, the formation of a plating film on the third peripheral portion Wf-d can be promoted, thereby bringing the plating film thickness on the third peripheral portion Wf-d closer to the reference film thickness. As a result, according to this embodiment, irregularities in the plating film thickness at the peripheral portion of the substrate can be corrected, improving the uniformity of the plating film thickness across the entire plated surface.

[0032] In this embodiment, an example is shown in which the position of the shielding member 481 is determined according to the distribution of the plating film thickness at the periphery of the substrate Wf measured by the film thickness sensor 490, but the invention is not limited to this. That is, the plating module 400 does not have to include the film thickness sensor 490. In this case, the shielding mechanism 485 can predict that a similar plating film thickness distribution will be formed on the same type of substrate Wf, based on the distribution of the plating film thickness of the substrate Wf obtained in advance by experimentation or the like. Therefore, the shielding mechanism 485 may be configured to switch the position of the shielding member 481 between a reference position, a shielding position, and a retracted position according to the distribution of the plating film thickness formed at the periphery of the substrate Wf.

[0033] Next, a plating method using the plating module 400 of this embodiment will be described. Figure 8 is a flowchart of a plating method using the plating module of one embodiment.

[0034] The plating method involves placing the substrate Wf in the substrate holder 440 (step 102). Step 102 can be performed by, for example, placing the substrate Wf with the plating surface Wf-a facing downwards in the seal ring holder 442 using a robot hand (not shown), and pressing the back surface of the substrate Wf with the back plate 444.

[0035] Next, the plating method involves lowering the substrate holder 440 into the plating bath 410 using the lifting mechanism 443 (lowering step 104). Subsequently, the plating method involves rotating the substrate holder 440 using the rotating mechanism 447 (rotation step 106).

[0036] Next, the plating method involves applying a voltage between the anode 430 placed in the plating bath 410 and the substrate Wf held in the substrate holder 440 to perform the plating process on the surface Wf-a to be plated (plating step 108). Steps 106 and 108 may be performed in any order or simultaneously.

[0037] Next, the plating method measures the plating thickness at the periphery of the substrate Wf using the film thickness sensor 490 (measurement step 110). Subsequently, the plating method switches the shielding member 481 between the reference position, the shielding position, and the retracted position according to the distribution of the plating thickness at the periphery of the substrate Wf measured in measurement step 110 (shielding step 112).

[0038] The shielding step 112 specifically includes a step 112-a for determining the type of peripheral edge of the substrate Wf that is close to the shielding member 481. If the shielding step 112 determines that a first peripheral edge Wf-b of the substrate Wf is close to the shielding member 481, it includes a first positioning step 112-b for positioning the shielding member 481 in a reference position relative to the first peripheral edge Wf-b. If the shielding step 112 determines that a second peripheral edge Wf-c of the substrate Wf is close to the shielding member 481, it includes a second positioning step 112-c for positioning the shielding member 481 in a shielding position relative to the second peripheral edge Wf-c. The shielding step 112 includes a third positioning step 112-d in which, if it is determined that the third peripheral edge Wf-d of the substrate Wf is close to the shielding member 481, the shielding member 481 is positioned in a retracted position relative to the third peripheral edge Wf-d. This corrects irregularities in the plating film thickness at the peripheral edge of the substrate and improves the uniformity of the plating film thickness across the entire surface to be plated.

[0039] Next, the plating method determines whether or not to terminate the plating process (step 114). If the plating method determines, for example, that the plating process should not be terminated because a predetermined amount of time has not elapsed since the start of the plating process (step 114, No), it returns to step 110 and continues the process.

[0040] On the other hand, if the plating method determines that the plating process should be terminated, for example, after a predetermined time has elapsed since the start of the plating process (step 114, Yes), it stops the plating process by stopping the voltage application between the anode 430 and the substrate Wf (step 116). Subsequently, the plating method stops the rotation of the substrate holder 440 by the rotating mechanism 447 (step 118). Subsequently, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 120). This completes the series of plating processes.

[0041] Next, other embodiments of the plating module 400 will be described. In the above embodiments, the shielding mechanism 485 is configured to switch the shielding member 481 between a reference position, a shielded position, and a retracted position depending on the distribution of the plating film thickness at the periphery of the substrate Wf, but is not limited thereto. The shielding mechanism 485 may be configured to switch the shielding member 481 between a reference position, a shielded position, and a retracted position depending on the type of substrate Wf held in the substrate holder 440. This point will be explained below.

[0042] Figure 9 is a schematic plan view illustrating an example of switching the placement position of the shielding member depending on the type of substrate. Figure 9(A) shows the plating film thickness distribution for three different types of substrates when the shielding member 481 is placed in the reference position and plating is performed. Figure 9(B) shows the state in which the shielding member 481 is placed in the reference position, the shielded position, and the retracted position for the three types of substrates. Figure 9(C) shows the plating film thickness distribution formed on the substrate as a result of arranging the shielding member 481 as in Figure 9(B).

[0043] As shown in Figure 9(A), the seed thickness is uneven on the plated surface of the substrate Wf, and the substrate Wf Various factors, such as the pattern shape on the surface to be plated, can cause irregularities in the plating thickness at the periphery of the substrate. For example, as shown in the upper part of Figure 9(A), suppose that a uniform plating thickness distribution is obtained across the entire substrate as a result of plating with the shielding member 481 placed in a reference position. In this case, for the same type of substrate, the shielding mechanism 485 places the shielding member 481 in a reference position as shown in the upper part of Figure 9(B). As a result, as shown in the upper part of Figure 9(C), uniformity of the plating thickness across the entire surface to be plated is obtained.

[0044] On the other hand, for example, as shown in the middle of Figure 9(A), suppose that as a result of plating with the shielding member 481 positioned at the reference position, the plating thickness at the peripheral edge of the substrate becomes thicker than at the center. In this case, the shielding mechanism 485 positions the shielding member 481 at the shielding position for the same type of substrate, as shown in the middle of Figure 9(B). As a result, the formation of plating thickness at the peripheral edge of the substrate Wf can be suppressed, and as shown in the middle of Figure 9(C), the uniformity of the plating thickness across the entire plated surface can be improved.

[0045] Furthermore, for example, as shown in the lower part of Figure 9(A), suppose that as a result of plating with the shielding member 481 positioned in the reference position, the plating thickness at the peripheral edge of the substrate becomes thinner than that at the center. In this case, the shielding mechanism 485 positions the shielding member 481 in the retracted position for the same type of substrate, as shown in the lower part of Figure 9(B). As a result, the formation of plating thickness at the peripheral edge of the substrate Wf can be promoted, and as shown in the lower part of Figure 9(C), the uniformity of the plating thickness across the entire plated surface can be improved. Thus, according to this embodiment, it is possible to correct irregularities in the plating thickness at the peripheral edge of the substrate and improve the uniformity of the plating thickness across the entire plated surface.

[0046] Next, a plating method using the plating module 400 of this embodiment will be described. Figure 10 is a flowchart of a plating method using the plating module of one embodiment.

[0047] The plating method involves determining the type of substrate to be held in the substrate holder 440 (determination step 201). Determination step 201 can determine the type of substrate based, for example, on the distribution of plating film thickness of similar substrates Wf obtained in advance through experiments. Next, the plating method involves placing the substrate Wf in the substrate holder 440 (step 202). Step 202 can be performed, for example, by placing the substrate Wf with the plating surface Wf-a facing downwards in the seal ring holder 442 using a robot hand (not shown) and pressing the back surface of the substrate Wf with the back plate 444.

[0048] Next, the plating method involves lowering the substrate holder 440 into the plating bath 410 using the lifting mechanism 443 (lowering step 204). Subsequently, the plating method involves rotating the substrate holder 440 using the rotating mechanism 447 (rotation step 206).

[0049] Next, the plating method involves applying a voltage between the anode 430 placed in the plating bath 410 and the substrate Wf held in the substrate holder 440 to perform the plating process on the surface Wf-a to be plated (plating step 208).

[0050] Next, the plating method involves switching the shielding member 481 between the reference position, the shielding position, and the retracted position depending on the type of substrate determined in the determination step 201 (shielding step 210). Specifically, as explained using Figures 9(A) and 9(B), the shielding step involves switching the shielding member 481 between the reference position, the shielding position, and the retracted position depending on whether the plating film thickness formed on the peripheral edge of the substrate is the same as, thicker than, or thinner than that on the central part. This corrects the irregularities in the plating film thickness on the peripheral edge of the substrate, as shown in Figure 9(C), and improves the uniformity of the plating film thickness across the entire surface to be plated. Steps 206, 208, and 210 may be performed in any order or simultaneously.

[0051] Next, the plating method determines whether or not to terminate the plating process (step 212). If the plating method determines, for example, that the plating process should not be terminated because a predetermined amount of time has not elapsed since the start of the plating process (step 212, No), it returns to step 212 and continues the process.

[0052] On the other hand, if the plating method determines that the plating process should be terminated because a predetermined time has elapsed since the start of the plating process (step 212, Yes), it stops the plating process by stopping the voltage application between the anode 430 and the substrate Wf (step 214). Subsequently, the plating method stops the rotation of the substrate holder 440 by the rotating mechanism 447 (step 216). Subsequently, the plating method raises the substrate holder 440 by the lifting mechanism 443 (step 218). This completes the series of plating processes.

[0053] Next, another aspect of the plating apparatus 1000 of this embodiment will be described. In the above embodiment, the resistor 450 included in the plating apparatus 1000 was shown as having a large number of holes formed at equal intervals along the circumferential direction of a disc member, but it is not limited to this. This point will be explained below.

[0054] Figure 11 is a plan view showing multiple regions included in a resistor of one embodiment. The resistor 450 is constructed by forming a large number of holes 452 in a disc member 451. In Figure 11, only a portion of the large number of holes 452 formed in the disc member 451 is shown, but in reality, the holes 452 are formed throughout within the dashed line 455. The dashed line 455 indicates the plated surface of the substrate, and the region through which metal ions of the resistor pass (ion permeable region) is set to be approximately the same as or slightly smaller than this plated surface of the substrate. The shielding region by the resistor refers to the region excluding the opening 454 (S5 region) which will be described later. With this setting, the resistor 450 functions appropriately with respect to the plated surface of the substrate Wf, and fine adjustment of the flow of the plating solution and the plating distribution of the metal on the substrate becomes possible. Although a large number of holes 452 are formed in the disc member 451, there are parts where the holes 452 are formed unevenly along the circumferential direction of the disc member 451. More specifically, as shown in Figure 11, the resistor 450 has a dynamic shielding region DA in which the resistor 450 and the shielding member 481 overlap when the shielding member 481 is positioned in the shielding position. The resistor 450 includes a first region S1 having a first shielding ratio in the dynamic shielding region DA. The first shielding ratio is the percentage to which the resistor 450 shields the transmission of metal ions in region S1, and the first shielding ratio = 1 - total area of ​​holes in region S1 / area of ​​region S1. The same applies to the shielding ratios of other regions, which will be described later. Note that each total area is calculated using the holes of adjacent regions as boundaries. The first region S1 has an area of ​​less than 0.35% of the total area of ​​the resistor 450 facing the substrate held by the substrate holder 440.

[0055] Furthermore, the resistor 450 includes a second region S2 located inward and spaced apart from the first region S1 within the dynamic shielding region DA, having a second shielding ratio greater than the first shielding ratio. The resistor 450 also includes a third region S3 located between the first region S1 and the second region S2 within the dynamic shielding region DA, having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. As the first region S1, the second region S2, and the third region S3 are arranged within the dynamic shielding region DA, the shielding ratio changes dynamically within the dynamic shielding region DA. The third region S3 extends circumferentially beyond the dynamic shielding region DA and uniformly has the third shielding ratio in the extended region. In this embodiment, the third region S3 extends around the entire circumference at a predetermined radial position (43rd row) of the resistor 450 and uniformly has the third shielding ratio around the entire circumference. Furthermore, since the first region S1 is a region at the periphery of the shielding region of the resistor 450 that has a local shielding rate over the entire circumferential direction, in this specification, the first region S1 is referred to as the "local shielding region".

[0056] Furthermore, the resistor 450 further includes a fourth region S4 located inside the second region S2 and in other circumferential parts of the second region S2, having a fourth shielding ratio smaller than the second shielding ratio. The resistor 450 further includes a fifth region S5 located in other circumferential parts of the first region S1 (specifically, a portion rotated 90 degrees relative to the first region S1), having an opening 454 larger than the hole 452. The shielding ratio of the fifth region S5 is 0, and the shielding regions of the resistor refer to specific regions (the first region, the second region, the third region, the fourth region, and the sixth region), which are characterized by different shielding ratios when the substrate is in a different orientation position. The resistor 450 further includes a sixth region S6 located in other circumferential parts of the first region S1 and the fifth region S5, having a sixth shielding ratio larger than the first shielding ratio.

[0057] In one embodiment of the example shown in Figure 11, the fourth region S4 is located around the entire circumference of the disc member from the center (row 0) to row 40, and in parts of rows 41 and 42, with a fourth shielding ratio of 72%. The second region S2 is located in parts of rows 41 and 42, with a second shielding ratio of 84%. The third region S3 is located in row 43, with a third shielding ratio of 66%. The first region S1 is located in parts of rows 44 and 45, with a first shielding ratio of 48%. The sixth region S6 is located in part of row 44, with a sixth shielding ratio of 86%.

[0058] In another embodiment of the example shown in Figure 11, the fourth region S4 is located around the entire circumference from the center (row 0) to row 40 of the disc member, and in part of row 41, with a fourth shielding ratio of 72%. The second region S2 is located in part of row 41, with a second shielding ratio of 86%. The third region S3 is located in rows 42 and 43, with a third shielding ratio of 72% for row 42 and 66% for row 43. The first region S1 is located in part of rows 44 and 45, with a first shielding ratio of 48%. The sixth region S6 is located in part of row 44, with a sixth shielding ratio of 86%.

[0059] Figure 12 schematically shows an example of the plating thickness when the position of the shielding member is adjusted according to the distribution of the plating thickness at the periphery of the substrate. As shown in the upper part of Figure 12, the shielding mechanism 485 positions the shielding member 481 at the shielding position for the portion of the substrate where the plating thickness is thick. This suppresses the formation of the plating thickness in that portion, so that the plating thickness in that portion can be brought closer to the reference thickness (normal thickness).

[0060] Furthermore, as shown in the middle section of Figure 12, the shielding mechanism 485 positions the shielding member 481 in a reference position for areas where the plating thickness at the peripheral edge of the substrate is normal. This allows the plating thickness in that area to be maintained at a normal thickness. Also, as shown in the lower section of Figure 12, the shielding mechanism 485 positions the shielding member 481 in a retracted position for areas where the plating thickness at the peripheral edge of the substrate is thin. This promotes the formation of the plating thickness in that area, bringing the plating thickness in that area closer to the reference thickness (normal thickness).

[0061] According to this embodiment, the resistor 450 has a third region S3 that extends circumferentially beyond the dynamic shielding region DA, and the extended region uniformly has a third shielding ratio. Therefore, the resistor 450 of this embodiment has advantages over conventional resistors. Specifically, for areas with normal plating thickness, the shielding member 481 is positioned at a reference location where the 42nd row of the resistor 450 is exposed, and the plating process is performed. Conventional resistors tend to have thinner plating thicknesses because the shielding ratio of rows 41 to 43 is higher than that of other circumferential directions. On the other hand, in the resistor 450 of this embodiment, the 43rd row (or rows 42 and 43) has the same shielding ratio as other circumferential directions and the holes are uniformly arranged, thus mitigating the influence of the current density distribution of rows 41 and 42 (or row 41) with different circumferential shielding ratios, and making it less susceptible to the influence of film thickness uniformity or coplanarity for areas with normal film thickness. As a result, according to this embodiment, when the shielding member 481 is positioned at the reference position, the periphery of the substrate The plating thickness of the part can be maintained at a normal thickness.

[0062] In one embodiment of the example shown in Figure 11, the fourth region S4 is located from the center (row 0) of the disc member to row 42, and the fourth shielding ratio is 72%. The third region S3 is located in row 43, and the third shielding ratio is 66%. The fifth region S5 is located in part of row 44 and row 45. Since the fifth region S5 has an opening 454 larger than the hole, the shielding ratio is 0%. The sixth region S6 is located in part of row 44, and the sixth shielding ratio is 86%.

[0063] In the above embodiment, the third region S3 is shown to extend around the entire circumference of the disc member 451, as shown in Figure 11, but the embodiment is not limited to this. Figure 13 is a plan view showing multiple regions included in a resistor of one embodiment.

[0064] Similar to the above embodiment, the resistor 450 includes a first region S1 having a first shielding ratio in the dynamic shielding region DA, and a second region S2 located inward and spaced apart from the first region S1, having a second shielding ratio greater than the first shielding ratio. The resistor 450 also includes a third region S3 located between the first region S1 and the second region S2 in the dynamic shielding region DA, having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio. The third region S3 extends circumferentially beyond the dynamic shielding region DA and uniformly has the third shielding ratio in the extended region.

[0065] In the example shown in Figure 13, the third region S3 does not extend around the entire circumference of the disc member 451. That is, in this embodiment, the fifth region S5 is located in the other circumferential parts of the third region S3 in addition to the other circumferential parts of the first region S1. In other words, the fifth region S5 extends not only to the 44th and 45th rows of the resistor 450, but also to the 43rd row. As a result, the fifth region S5 is present in part of the 43rd row of the resistor 450, but the third region S3 extends along the circumferential direction of the resistor 450 over most of the 43rd row.

[0066] Furthermore, the resistor 450 is located inside the second region S2 and in other circumferential parts of the second region S2, and includes a fourth shielding ratio that is less than the second shielding ratio and the same as the third shielding ratio, and a sixth region S6 located in other circumferential parts of the first region S1 and the fifth region S5, and having a sixth shielding ratio that is greater than the first shielding ratio. In the example shown in Figure 13, the fourth region S4 is located around the entire circumference from the center (row 0) of the disc member to row 40, and in parts of rows 41 and 42, and the fourth shielding ratio is 72%. The second region S2 is located in parts of rows 41 and 42, and the second shielding ratio is 84%. The third region S3 is located in row 43, and the third shielding ratio is 72%, which is the same as the fourth shielding ratio, which is different from the above embodiment. Furthermore, the first region S1 is located in part of the 44th and 45th columns, and the first shielding ratio is 48%. Additionally, the sixth region S6 is located in part of the 44th column, and the sixth shielding ratio is 86%.

[0067] According to this embodiment, a third region S3 having a uniform shielding rate extends along the circumferential direction of the resistor 450 in most of the 43rd row of the resistor 450. Therefore, the resistor 450 of this embodiment has advantages over conventional resistors. That is, for areas with normal plating film thickness, the shielding member 481 is placed at a reference position such that the 42nd row of the resistor 450 is exposed, and the plating process is performed. In conventional resistors, the shielding rate of rows 41 to 43 is higher than the shielding rate in other circumferential directions, so the plating film thickness tends to be thinner. On the other hand, since most of the 43rd row of the resistor 450 of this embodiment is uniformly arranged with the same shielding rate as the other circumferential directions, the influence of the current density distribution of rows 41 and 42, which have different shielding rates in other circumferential directions, is mitigated, and the thickness uniformity or coplanarity of the film is less affected in areas with normal film thickness. As a result, according to this embodiment, when the shielding member 481 is placed at a reference position... In this state, the plating thickness at the peripheral edge of the substrate can be maintained at a normal thickness.

[0068] Next, another embodiment of the plating apparatus 1000 of this embodiment will be described. Figure 14 is a schematic plan view showing an example in which the position of the shielding member is switched according to the distribution of the plating film thickness at the peripheral edge of the substrate.

[0069] In the above embodiment, an example was shown in which the shielding mechanism 485 is configured to switch the position of the shielding member 481 between a reference position, a shielded position, and a retracted position, but it is not limited thereto. The shielding mechanism 485 may be configured to position the shielding member 481 between a shielded position between the anode 430 and the substrate Wf and a retracted position where it is retracted from between the anode 430 and the substrate Wf. Figure 14 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between a shielded position and a retracted position. Figure 14 also shows the switching of the position of the shielding member when the numerous holes in the resistor 450 are formed at equal intervals along the circumferential direction of the disc member.

[0070] Furthermore, although the above embodiment shows an example in which the rotation mechanism 447 rotates the substrate holder 440 in one direction at a constant speed, it is not limited to this. The rotation mechanism 447 may be configured to rotate the substrate holder 440 so that a first portion Wf-e at a selected azimuth angle position of the substrate Wf is located in a dynamic shielding region DA defined by the resistor 450 and the shielding member 481 for a different time than a second portion Wf-f of the substrate, which is at a different azimuth angle position than the first portion and has the same arc length and radius position as the first portion. The dynamic shielding region DA is a region in which the shielding ratio changes when the first portion Wf-e of the substrate is in the dynamic shielding region DA compared to when the second portion Wf-f of the substrate is in the dynamic shielding region DA.

[0071] As shown in Figure 14, if the first portion Wf-e of the substrate includes a portion with a thicker plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0072] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (the portion with a thicker film thickness) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness).

[0073] Figure 15 shows the relationship between the timing of shielding the first portion Wf-e of the substrate and the rotation speed of the substrate holder. In the graph of Figure 15, the horizontal axis shows the rotational position of the first portion Wf-e of the substrate Wf, and the vertical axis shows the position of the shielding member (shielding position or retracted position) and the rotation speed (rotation direction) of the substrate holder 440. In this example, as shown in Figure 15, it is assumed that when a specific position on the substrate (e.g., a notch on the substrate) is used as a reference (θ=0), the first portion Wf-e where the plating deposition rate is to be suppressed exists in the peripheral area within the range of θ=θ1 to θ=θ2.

[0074] Figure 15 shows the position of the shielding member and the rotation speed of the substrate holder when an additional suppression of the plating deposition rate in the first portion Wf-e of the substrate Wf is performed once (the rotation direction of the substrate holder is switched twice). As shown in Figure 15, the rotation mechanism 447 first rotates the substrate holder 440 in a first direction at a predetermined speed, as indicated by arrow A in Figure 15. Subsequently, the shielding mechanism 485 pushes the shielding member 481 to the shielding position when the position θ1 of the substrate Wf is at the center of the shielding member 481. Subsequently, the rotation mechanism 447 switches the rotation direction of the substrate holder 440 and rotates it in a second direction when the position θ2 of the substrate Wf is at the center of the shielding member 481. Subsequently, the rotation mechanism 447 pushes the shielding member 481 to the shielding position when the position θ1 of the substrate Wf is at the center of the shielding member 481 When it reaches the center, the rotation direction of the substrate holder 440 is switched to rotate it in the first direction.

[0075] The rotating mechanism 447 switches the rotation direction of the substrate holder 440 (reciprocating rotation of the substrate holder 440) while the shielding member 481 is positioned in the shielding position, allowing the shielding member 481 to be positioned in the shielding position for approximately three times longer than when the substrate holder 440 is rotated at a constant speed in the first direction, as shown in Figure 15. Therefore, according to this embodiment, the formation of plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0076] In this embodiment, an example is shown in which the rotation direction of the substrate holder 440 is reversed (the substrate holder 440 is rotated back and forth) when the first portion Wf-e of the substrate is located in the dynamic shielding region DA, but the embodiment is not limited to this. The rotation mechanism may be configured to position the first portion Wf-e of the substrate in a time-dynamic shielding region DA different from the second portion Wf-f of the substrate by increasing (speeding up) or decreasing (slowing down) the rotation speed of the substrate holder 440 when the first portion Wf-e of the substrate is located in the dynamic shielding region DA.

[0077] Figure 16 is a schematic plan view illustrating an example of switching the position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figure 16 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between a reference position and a shielding position. Figure 16 also shows the switching of the position of the shielding member when the numerous holes in the resistor 450 are formed at equal intervals along the circumferential direction of the disc member.

[0078] As shown in Figure 16, if the first portion Wf-e of the substrate includes a portion with a thicker plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0079] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 by switching the rotation direction of the substrate holder 440, so that the first portion Wf-e of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f, as described in Figure 15. Therefore, according to this embodiment, the formation of plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0080] Figure 17 is a schematic plan view illustrating an example of switching the position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figure 17 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between a retracted position and a shielded position. Figure 17 also shows the switching of the position of the shielding member when, for example, the numerous holes in the resistor 450 are formed unevenly along the circumferential direction of the disc member, as in the embodiments shown in Figures 11 to 13.

[0081] As shown in Figure 17, if the first portion Wf-e of the substrate includes a portion with a thicker plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in the retracted position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0082] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (the portion with a thicker film thickness) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness), as described in Figure 15. Therefore, according to this embodiment, the formation of plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0083] Figure 18 is a schematic plan view illustrating an example of switching the placement position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figure 18 shows an example in which the shielding mechanism 485 switches the placement of the shielding member 481 between a reference position and a shielding position. Figure 18 also shows the switching of the placement position of the shielding member when, for example, the numerous holes in the resistor 450 are formed non-uniformly along the circumferential direction of the disc member, as in the embodiments shown in Figures 11 to 13.

[0084] As shown in Figure 18, if the first portion Wf-e of the substrate includes a portion with a thicker plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in the shielding position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in the reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0085] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (the portion with a thicker film thickness) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness), as described in Figure 15. Therefore, according to this embodiment, the formation of plating film thickness in the first portion Wf-e of the substrate Wf can be strongly suppressed.

[0086] Figure 19 is a schematic plan view illustrating an example of switching the position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figure 19 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between a shielded position and a retracted position. Figure 19 also shows the switching of the position of the shielding member when, for example, the numerous holes in the resistor 450 are formed unevenly along the circumferential direction of the disc member, as in the embodiments shown in Figures 11 to 13.

[0087] As shown in Figure 19, if the first portion Wf-e of the substrate includes a portion with a thinner plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in a retracted position when the first portion Wf-e of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in a shielded position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0088] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e (the portion with a thin film thickness) of the substrate Wf is located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness), as described in Figure 15. Therefore, according to this embodiment, the formation of the plating film thickness in the first portion Wf-e of the substrate Wf can be strongly promoted.

[0089] Figure 20 is a schematic plan view illustrating an example of switching the position of the shielding member according to the distribution of the plating thickness at the periphery of the substrate. Figure 20 shows an example in which the shielding mechanism 485 switches the position of the shielding member 481 between a reference position, a shielding position, and a retracted position. Figure 20 also shows the switching of the position of the shielding member when, for example, the numerous holes in the resistor 450 are formed unevenly along the circumferential direction of the disc member, as in the embodiments shown in Figures 11 to 13.

[0090] As shown in Figure 20, if the first portion Wf-e1 of the substrate includes a portion with a thicker plating film than the second portion Wf-f of the substrate, the shielding mechanism 485 is configured to position the shielding member 481 in the shielding position when the first portion Wf-e1 of the substrate is located in the dynamic shielding region DA. Also, if the first portion Wf-e2 of the substrate has a thicker plating film than the second portion Wf-f of the substrate... If the substrate has thin film thickness, the shielding mechanism 485 is configured to position the shielding member 481 in a retracted position when the first portion Wf-e2 of the substrate is located in the dynamic shielding region DA. The shielding mechanism 485 is also configured to position the shielding member 481 in a reference position when the second portion Wf-f of the substrate is located in the dynamic shielding region DA.

[0091] Furthermore, the rotation mechanism 447 is configured to rotate the substrate holder 440 so that the first portion Wf-e1 (the portion with a thicker film thickness) and e2 (the portion with a thinner film thickness) of the substrate Wf are located in the dynamic shielding region DA for a longer time than the second portion Wf-f (the portion with a normal film thickness). Therefore, according to this embodiment, the formation of the plating film thickness in the first portion Wf-e1 of the substrate Wf can be strongly suppressed, while the formation of the plating film thickness in the first portion Wf-e2 of the substrate Wf can be strongly promoted.

[0092] Although several embodiments of the present invention have been described above, the embodiments described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved without departing from its spirit, and of course, equivalents thereof are included in the present invention. Furthermore, any combination or omission of the components described in the claims and specification is possible to the extent that at least some of the above-mentioned problems can be solved or at least some of the effects can be achieved.

[0093] This application discloses a plating apparatus, as one embodiment, comprising: a plating tank configured to contain a plating solution; an anode disposed in the plating tank; a substrate holder configured to hold a substrate with the surface to be plated facing downward; a lifting mechanism configured to raise and lower the substrate holder; a rotating mechanism configured to rotate the substrate holder; a shielding member capable of shielding the electric field formed between the anode and the substrate; and a shielding mechanism configured to switch the position of the shielding member between a reference position between the anode and the substrate, a shielding position where the electric field shielding area is larger than the reference position, and a retracted position where the shielding member is retracted from between the anode and the substrate.

[0094] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the shielding mechanism is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position in accordance with the distribution of the plating film thickness formed on the peripheral edge of the substrate.

[0095] Furthermore, the present invention discloses a plating apparatus that, as one embodiment, further includes a film thickness sensor configured to measure the plating film thickness at the peripheral edge of the substrate, and the shielding mechanism is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating film thickness at the peripheral edge of the substrate measured by the film thickness sensor.

[0096] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the shielding mechanism is configured to position the shielding member at the reference position relative to the first peripheral edge of the substrate on which the first plating film thickness is formed, position the shielding member at the shielding position relative to the second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed, and position the shielding member at the retracted position relative to the third peripheral edge of the substrate on which a third plating film thickness thinner than the first plating film thickness is formed.

[0097] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the shielding mechanism is configured to switch and position the shielding member between the reference position, the shielding position, and the retracted position depending on the type of substrate held in the substrate holder.

[0098] Furthermore, in one embodiment, the present invention relates to a base that holds a substrate with the plated surface facing downwards. A plating method is disclosed, which includes a lowering step of lowering a plate holder into a plating tank; a rotating step of rotating the substrate holder; a plating step of applying a plating treatment to the surface of the substrate to be plated that has been lowered into the plating tank; and a shielding step of switching the position of a shielding member capable of shielding the electric field formed between an anode and a substrate, which is placed in the plating tank, between a reference position between the anode and the substrate, a shielding position in which the electric field shielding area is larger than that of the reference position, and a retracted position in which the shielding member is retracted from between the anode and the substrate.

[0099] Furthermore, the present application discloses a plating method in which, as one embodiment, the shielding step is configured to switch the position of the shielding member between the reference position, the shielding position, and the retracted position in accordance with the distribution of the plating thickness formed on the peripheral edge of the substrate.

[0100] Furthermore, the present invention discloses a plating method in which, as one embodiment, a measurement step is further included for measuring the plating thickness of the peripheral edge of the substrate, and the shielding step is configured to switch the shielding member between the reference position, the shielding position, and the retracted position according to the distribution of the plating thickness of the peripheral edge of the substrate measured by the measurement step.

[0101] Furthermore, the present application discloses a plating method in which, as one embodiment, the shielding step includes a first positioning step of positioning the shielding member at the reference position relative to a first peripheral edge of the substrate on which a first plating film thickness is formed; a second positioning step of positioning the shielding member at the shielding position relative to a second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed; and a third positioning step of positioning the shielding member at the retracted position relative to a third peripheral edge of the substrate on which a third plating film thickness thinner than the first plating film thickness is formed.

[0102] Furthermore, the present invention discloses a plating method in which, as one embodiment, a determination step is further included in which a determination step is made to determine the type of substrate held in the substrate holder, and the shielding step is configured to switch and position the shielding member between the reference position, the shielding position and the retracted position according to the type of substrate determined in the determination step.

[0103] Furthermore, in one embodiment, the present invention provides a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with the surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a local shielding region, a lifting mechanism configured to raise and lower the substrate holder, a rotating mechanism configured to rotate the substrate holder, a shielding member capable of shielding the electric field formed between the anode and the substrate, and the shielding member being positioned between the anode and the The present invention discloses a plating apparatus comprising a shielding mechanism configured to be positioned between a shielding position between the substrate and the anode and a retracted position retracted from between the anode and the substrate, wherein the rotation mechanism is configured to rotate the substrate holder such that a first portion of the substrate at a selected azimuth angle position is positioned at a different azimuth angle position than the first portion and at a different time than a second portion of the substrate having the same arc length and radius position as the first portion, and the shielding member is positioned at the shielding position in a dynamic shielding region where the resistor and the shielding member overlap.

[0104] Furthermore, the present invention discloses a plating apparatus in which, as one embodiment, the rotating mechanism is configured to increase or decrease the rotation speed of the substrate holder or reverse the rotation direction of the substrate holder when the first portion of the substrate is located in the dynamic shielding region, thereby positioning the first portion of the substrate in the dynamic shielding region for a different time than the second portion of the substrate.

[0105] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the first portion of the substrate includes a portion with a thicker or thinner plating film than the second portion of the substrate.

[0106] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, when the first portion of the substrate includes a portion with a thicker plating film than the second portion of the substrate, the shielding mechanism is configured to position the shielding member at the shielding position when the first portion of the substrate is located in the dynamic shielding region.

[0107] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, when the first portion of the substrate includes a portion in which the plating film thickness is thinner than that of the second portion of the substrate, the shielding mechanism is configured to position the shielding member in the retracted position when the first portion of the substrate is located in the dynamic shielding region.

[0108] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the shielding rate of the dynamic shielding region changes when a first portion of the substrate is in the dynamic shielding region compared to when a second portion of the substrate is in the dynamic shielding region.

[0109] Furthermore, in one embodiment, the present application includes a plating tank configured to contain a plating solution, an anode disposed in the plating tank, a substrate holder configured to hold a substrate with the surface to be plated facing downward, a resistor disposed between the anode and the substrate holder and having a plurality of holes penetrating the anode side and the substrate holder side, a lifting mechanism configured to raise and lower the substrate holder, a rotating mechanism configured to rotate the substrate holder, a shielding member capable of shielding the electric field formed between the anode and the substrate, and a shielding mechanism configured to position the shielding member between a shielding position between the anode and the substrate and a retracted position retracted from between the anode and the substrate, wherein the resistor is The present invention discloses a plating apparatus comprising a dynamic shielding region overlapping with the shielding member positioned at the shielding location, including a first region having a first shielding ratio, a second region positioned inward and spaced apart from the first region and having a second shielding ratio greater than the first shielding ratio, and a third region positioned between the first region and the second region and having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, wherein the third region extends circumferentially beyond the dynamic shielding region and uniformly has the third shielding ratio in the extended region, and the resistor includes a fourth region positioned inward from the second region and in other circumferential parts of the second region and having a fourth shielding ratio less than the second shielding ratio and the same as the third shielding ratio.

[0110] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the resistor further includes a fifth region having an opening larger than the hole, which is located in the other circumferential portion of the first region and the other circumferential portion of the third region.

[0111] Furthermore, the present application discloses a plating apparatus in which, as one embodiment, the resistor further includes a sixth region located in the other circumferential portion of the first region and the fifth region, and having a sixth shielding ratio greater than the first shielding ratio.

[0112] Furthermore, the present application discloses, as one embodiment, a plating apparatus in which the first region has an area of ​​less than 0.35% of the total area of ​​the resistor facing the substrate held in the substrate holder. [Explanation of symbols]

[0113] 400 Plating Modules 410 Plating tank 430 anodes 440 PCB holder 443 Lifting mechanism 447 Rotation mechanism 450 resistor 452 holes 454 Aperture 481 Shielding member 485 Shielding mechanism 490 Film Thickness Sensor 1000 Plating equipment Wf substrate Wf-a plated surface Wf-b First peripheral edge Wf-c Second peripheral edge Wf-d Third Peripheral Wf-e Part 1 Wf-f Part 2 DA dynamic occlusion area S1 First Domain S2 Second area S3 Third Domain S4 Fourth Domain S5 Fifth Domain S6 The sixth area

Claims

1. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is disposed between the anode and the substrate holder and includes a region that allows metal ions to pass through. A lifting mechanism configured to raise and lower the substrate holder, A rotating mechanism configured to rotate the substrate holder, A shielding member capable of shielding the electric field formed between the anode and the substrate, A shielding mechanism is configured to position the shielding member so as to be movable between a shielding position between the anode and the substrate and a retracted position where the shielding member is retracted from between the anode and the substrate. Includes, The resistor includes, in a dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, and a second region positioned inward and spaced apart from the first region, having a second shielding ratio greater than the first shielding ratio. The shielding mechanism is configured such that the shielding member is placed in the first region with respect to the first peripheral edge of the substrate on which the first plating film thickness is formed, and the shielding member is placed in the second region with respect to the second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed. Plating equipment.

2. The shielding member is configured to be positioned in the retracted position relative to the third peripheral edge of the substrate on which a third plating film thinner than the first plating film is formed. The plating apparatus according to claim 1.

3. The rotation mechanism reduces the rotation speed of the substrate holder or reverses the rotation direction of the substrate holder when the second peripheral edge of the substrate is located in the dynamic shielding region. The second peripheral edge of the substrate is configured to be positioned in the dynamic shielding region at a time different from that of the first peripheral edge of the substrate. The plating apparatus according to claim 1.

4. The rotation mechanism is configured to position the third peripheral edge of the substrate in the dynamic shielding region for a different time than the first peripheral edge of the substrate, by reducing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the third peripheral edge of the substrate is located in the dynamic shielding region. The plating apparatus according to claim 2.

5. The resistor further includes a third region positioned between the first region and the second region, having a third shielding ratio greater than the first shielding ratio and less than the second shielding ratio, the third region extending circumferentially beyond the dynamic shielding region, and having the third shielding ratio uniformly in the extended region. The resistor is located inside the second region and in other parts of the circumferential direction of the second region, and includes a fourth region having a fourth shielding ratio that is less than the second shielding ratio and the same as the third shielding ratio. The plating apparatus according to claim 1.

6. The resistor further includes a fifth region having an opening, which is located in the other circumferential portion of the first region and the other circumferential portion of the third region. The plating apparatus according to claim 5.

7. The resistor further includes a sixth region located in the other circumferential portions of the first region and the fifth region, having a sixth shielding ratio greater than the first shielding ratio. The plating apparatus according to claim 6.

8. The first region has an area of ​​less than 0.35% of the total area of ​​the resistor facing the substrate held in the substrate holder. The plating apparatus according to claim 1.

9. A plating tank configured to contain a plating solution, an anode placed in the aforementioned plating tank, A substrate holder configured to hold the substrate with the plated surface facing downwards, A resistor is disposed between the anode and the substrate holder and includes a region that allows metal ions to pass through. A shielding member capable of shielding the electric field formed between the anode and the substrate, A plating method using a plating apparatus having, A lowering step involves lowering the substrate holder, which holds the substrate with the surface to be plated facing downward, into the plating tank, A rotation step of rotating the substrate holder, A plating step of applying a plating treatment to the surface of the substrate to be plated, which has been lowered into the plating tank, A shielding step involves moving the shielding member, which is capable of shielding the electric field formed between the anode and the substrate arranged in the plating tank, between a shielding position between the anode and the substrate and a retracted position where the shielding member is retracted from between the anode and the substrate. Includes, The resistor includes, in a dynamic shielding region overlapping with the shielding member positioned at the shielding location, a first region having a first shielding ratio, and a second region positioned inward and spaced apart from the first region, having a second shielding ratio greater than the first shielding ratio. The shielding step includes the step of placing the shielding member within the first region with respect to the first peripheral edge of the substrate on which the first plating film thickness is formed, and the step of placing the shielding member within the second region with respect to the second peripheral edge of the substrate on which a second plating film thickness thicker than the first plating film thickness is formed. Plating method.

10. The shielding step further includes positioning the shielding member in the retracted position relative to the third peripheral edge of the substrate on which a third plating film thinner than the first plating film is formed. The plating method according to claim 9.

11. The rotation step includes reducing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the second peripheral edge of the substrate is located in the dynamic shielding region, thereby positioning the second peripheral edge of the substrate in the dynamic shielding region for a different time than the first peripheral edge of the substrate. The plating method according to claim 9.

12. The rotation step is configured to position the third peripheral edge of the substrate in the dynamic shielding region for a different time than the first peripheral edge of the substrate, by reducing the rotation speed of the substrate holder or reversing the rotation direction of the substrate holder when the third peripheral edge of the substrate is located in the dynamic shielding region. The plating method according to claim 10.

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