Ceramic engineering based on material gradients

Abstract

[0005] Embodiments disclosed herein include a puck for an electrostatic chuck. In embodiments, the puck comprises a substrate having a top surface and a bottom surface. In embodiments, a first material composition is on the top surface of the substrate and a second material composition is on the bottom surface of the substrate. In embodiments, a composition gradient is provided across the substrate between the top surface and the bottom surface.

Description

[Technical Field]

[0001] Cross-reference of related applications This application claims priority to U.S. Patent Application No. 18 / 112,988 filed on 22 February 2023, which claims the benefit of U.S. Provisional Application No. 63 / 326,599 filed on 1 April 2022, the contents of which are incorporated herein by reference in their entirety.

[0002] The embodiments relate to the semiconductor manufacturing field, and more particularly to ceramic packs for electrostatic chucking architectures, including gradient material compositions. [Background technology]

[0003] In semiconductor manufacturing processes, chucks are used to fix semiconductor substrates (e.g., wafers) to a flat surface for processing. Often, these chucks are electrostatic chucks; that is, an electrostatic force generated by the chuck is applied to the semiconductor substrate to attract and fix it to the chuck. Generally, a chuck includes a base plate and a pack on the base plate. In some cases, one or both of the base plate and / or pack may be temperature-controlled. The pack may be fixed to the base plate by adhesive or other bonding architectures (e.g., diffusion bonding).

[0004] Existing chucking architectures have performance limitations. This is because the pack needs to be optimized for given conditions, which may require sacrificing overall performance. In dielectric etching products, limitations in thermal uniformity may prevent the dielectric etching process from being performed at high plasma loads. In conductive etching products, the pack cannot achieve high thermal uniformity at high temperatures due to the contact surfaces between the ceramic layer, binder material, and metal base plate of the pack. In deposited products, the reduced clamping force of AlN at high temperatures prevents an expansion of the operating process window. In both deposited and etched products, the ceramic of the pack is susceptible to erosion by halogen plasma-derived particles. [Overview of the Initiative]

[0005] Embodiments disclosed herein include packs for electrostatic chucks. In the embodiments, the pack comprises a substrate having a top surface and a bottom surface. In the embodiments, a first material composition is present on the top surface of the substrate, and a second material composition is present on the bottom surface of the substrate. In the embodiments, a compositional gradient is provided across the substrate between the top surface and the bottom surface.

[0006] Embodiments disclosed herein further include a pack for an electrostatic chuck. In the embodiment, the pack comprises a substrate and a first material composition within the substrate. In the embodiment, a second material composition is provided within the substrate. In the embodiment, a compositional gradient is provided between the first material composition and the second material composition.

[0007] The embodiments may further include an electrostatic chuck. In the embodiments, the electrostatic chuck comprises a base plate and a pack bonded to the base plate. In the embodiments, the pack includes a substrate and a first material composition within the substrate. In the embodiments, a second material composition is provided within the substrate. In the embodiments, the pack further includes a composition gradient between the first material composition and the second material composition. [Brief explanation of the drawing]

[0008] [Figure 1] This is a cross-sectional view of an electrostatic chuck. [Figure 2A] This is a cross-sectional view of a pack of electrostatic chucks according to an embodiment, comprising a first material composition and a second material composition, with a compositional gradient between the first and second material compositions. [Figure 2B] This is a cross-sectional view of a pack of electrostatic chucks according to an embodiment, comprising a first material composition and a second material composition, with a compositional gradient between the first and second material compositions. [Figure 3A] This is a plan view of a pack according to an embodiment, having a first material composition in the center of the pack, a second material composition at the edge of the pack, and having a radial compositional gradient between the first and second material compositions. [Figure 3B]This is a plan view of a pack according to an embodiment, in which the first edge of the pack has a first material composition, the second edge of the pack has a second material composition, and there is a compositional gradient between the first and second material compositions. [Figure 4A] This is a cross-sectional view of a pack according to an embodiment, having a first material composition, a second material composition, and a third material composition, and having a compositional gradient between layers. [Figure 4B] This is a cross-sectional view of an electrostatic chuck comprising a pack containing three material compositions, with a compositional gradient between them, according to an embodiment. [Figure 4C] This is a cross-sectional view of a pack according to an embodiment, having a first material composition, a second material composition, and a third material composition, and having a compositional gradient between layers. [Figure 4D] This is a cross-sectional view of an electrostatic chuck comprising a pack containing three material compositions, with a compositional gradient between them, according to an embodiment. [Figure 5] This is a cross-sectional view of a pack according to an embodiment, having a first material composition, a second material composition directly below the first material composition, and a third material composition at the bottom of the pack. [Figure 6] This is a cross-sectional view of a pack according to an embodiment, comprising a first material composition having a first particle size and a second material composition having a second particle size, and a pack having a particle size gradient between the first material composition and the second material composition. [Figure 7A] This is a cross-sectional view of a pack having a diffusion source on the surface of the pack according to an embodiment. [Figure 7B] This is a cross-sectional view of the pack shown in Figure 7A after the diffusion process has been carried out according to the embodiment. [Figure 8A] This is a cross-sectional view of a pack having a diffusion source embedded in the pack, according to an embodiment. [Figure 8B] This is a cross-sectional view of the pack shown in Figure 8A after the diffusion process according to the embodiment has been carried out. [Figure 9] This is a cross-sectional view of a pack having a mesa, a first material composition, and a second material composition according to an embodiment. [Figure 10]A block diagram of an exemplary computer system that can be used with a processing tool according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The systems described herein include ceramic packs for an electrostatic chucking architecture that includes a graded material composition. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to one of ordinary skill in the art that the embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail in order not to obscure the embodiments needlessly. Further, it should be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0010] As described above, semiconductor processing tools typically employ a chuck to secure a substrate (e.g., a wafer) to a flat surface for processing. The chuck is often an electrostatic chuck that includes a base plate and a pack on the base plate. In the case of an electrostatic chuck, the pack also includes electrodes to supply an electrostatic charge to secure the substrate to the chuck. The pack is generally a ceramic material.

[0011] There are several design considerations to take into account when selecting the material for the pack. Chuck strength, temperature uniformity, and resistance to etching chemicals are some of the design considerations that can be used in the design of the pack. Unfortunately, as a result of such design considerations, a chuck optimized for one application may sacrifice performance in other areas. This is particularly true when the pack is formed from a single material, as is common in existing architectures.

[0012] An example of the chuck 150 is provided in FIG. 1. As shown, the base plate 151 may be coupled to the pack 120 by the adhesive layer 153. The cooling channel 152 may be provided in the base plate 151, and the electrode 121 may be provided in the pack 120. The backside gas line 154 may supply gas (e.g., helium) to the backside of the substrate (not shown) for thermal control purposes. As shown, the pack 120 includes a single material. For example, the pack 120 may include Al2O3 or AlN in some embodiments. In other embodiments, the pack 120 may include a material that is more resistant to etching chemicals such as Y2O3. Unfortunately, by providing a single material, the performance of the pack 120 is limited.

[0013] Therefore, the embodiments disclosed herein include packs having multiple material compositions. For example, the first surface of the pack may have a first material composition, and the second surface of the pack may have a second material composition. Further, there may be a compositional gradient between the first material composition and the second material composition. That is, the embodiments may include packs having a material composition that varies continuously through the thickness of the pack, or packs having a material composition that varies radially. In some embodiments, other compositional gradient directions may also be used.

[0014] The pack material may include a ceramic-ceramic gradient, a ceramic-metal gradient, a ceramic-polymer gradient, or a metal-polymer gradient. In certain embodiments, the ceramic material may include metal oxides, nitrides, carbides, borides, fluorides, silicides, sulfides, etc. In the case of metal oxides, examples of the metal component include aluminum, copper, molybdenum, tungsten, titanium, graphite, etc. The material composition contains 0.01% or more of the metal.

[0015] Next, we refer to Figure 2A, a cross-sectional view showing a pack 220 for an electrostatic chuck according to an embodiment. In this embodiment, the pack 220 may include a substrate 230. Electrodes 221 may be provided within the substrate 230. The substrate 230 may have a thickness of about 0.1 mm to about 20 mm. The substrate 230 may optionally include a ceramic material. However, it should be understood that other material classes (e.g., metals) may be included in the substrate 230.

[0016] In the embodiment, the substrate 230 may include a first material composition 231 on the upper surface and a second material composition 232 on the bottom surface. Furthermore, a composition gradient 235 may be provided between the first material composition 231 and the second material composition 232. That is, the material composition of the substrate 230 may vary throughout the thickness of the pack 220. More specifically, the embodiment shown in Figure 2A is different from a situation in which the first layer is on the upper surface of the substrate and the second layer is on the bottom surface of the substrate, and the substrate has a single material composition throughout its thickness. However, it should be understood that the embodiment may include an architecture having a first layer on the upper surface of the substrate, a second layer on the bottom surface of the substrate, and a substrate that is a single material composition. For example, the first layer may contain 90% Al2O3 and 10% AlN, the second layer may contain 90% AlN and 10% Al2O3, and the substrate may contain 50% AlN and 50% Al2O3.

[0017] In embodiments, the first material composition 231 may contain a single first solid solution phase, and the second material composition 232 may contain a single second solid solution phase. For example, the composition gradient 235 may start with one material and end with the second material. In one embodiment, the first solid solution phase may contain 100% Al2O3, and the second solid solution phase may contain 100% AlN. The composition gradient 235 may change from an Al2O3-rich material composition at the top of the substrate 230 to an AlN-rich material composition at the bottom of the substrate 230. For example, at an intermediate point between the first material composition 231 and the second material composition 232, the composition gradient 235 may have about 50% Al2O3 and about 50% AlN. It should be understood that, of course, the composition gradient 235 does not have to be linear. For example, the position where the composition gradient 235 has approximately 50% Al2O3 and approximately 50% AlN may be close to the first material composition 231 or close to the second material composition. In the embodiment, the proportion of one of the material compositions may increase monotonically through the thickness of the substrate 230.

[0018] In additional embodiments, the first material composition 231 and the second material composition 232 may comprise two different solid solution phases. For example, the first material composition 231 may comprise about 70% Al2O3 and about 30% AlN. In some cases, the second material composition 232 may comprise about 100% AlN. In other embodiments, the second material composition 232 may comprise about 70% AlN and about 30% Al2O3. That is, the composition gradient 235 is not limited to a change from the first solid solution phase to the second solid solution phase. Instead, embodiments may include a composition gradient 235 that converts a first material composition having a pair of solid solution phases into a second material composition having a pair of solid solution phases.

[0019] In the case of Al2O3 and AlN substrates 230, the Al2O3-rich upper material composition 231 increases the clamping force at higher operating temperatures. AlN has high thermal conductivity, improving the temperature uniformity of the pack 220.

[0020] Although the first material composition 231 and the second material composition 232 have been described as metal oxides and metal nitrides, it should be understood that other material classes can also be used in the first material composition 231 and the second material composition 232. For example, the materials may include carbides, borides, fluorides, silicides, sulfides, etc. Furthermore, metallic materials such as aluminum, copper, molybdenum, tungsten, titanium, and graphite can also be used.

[0021] Next, we refer to Figure 2B, a cross-sectional view showing pack 220 according to an additional embodiment. As illustrated, pack 220 has the opposite shading to pack 220 in Figure 2A. That is, the material composition that was at the bottom of the substrate 230 in Figure 2A is at the top of the substrate 230 in Figure 2B. Similarly, the material composition that was at the top of the substrate 230 in Figure 2A is at the bottom of the substrate 230 in Figure 2B.

[0022] For example, the first material composition 231 may contain AlN, and the second material composition 232 may contain Al2O3. The above embodiments can consequently improve heat conduction at higher plasma loads and increase the clamping force. The clamping force can increase as a result of a decrease in effective electrical distance. Furthermore, housing the electrode 221 in Al2O3 controls charge transport and improves the performance of pack 220.

[0023] In Figures 2A and 2B, a compositional gradient 235 is provided that extends through the thickness of the substrate 230. However, the embodiments are not limited to the above configuration. For example, Figures 3A and 3B provide different compositional gradient directions.

[0024] Next, we refer to Figure 3A, a plan view showing a pack 320 according to an embodiment. In this embodiment, the pack 320 comprises a substrate 330. In this embodiment, the first material composition 333 may be located approximately in the center of the substrate 330, and the second material composition 334 may be located in the peripheral area of ​​the substrate 330. The composition gradient 335 extends outward from the first material composition 333 to the second material composition 334. That is, the composition gradient 335 may be a radial composition gradient.

[0025] In embodiments, the first material composition 333 and the second material composition 334 may be the same as the first material composition 231 and the second material composition 232 described in more detail above. For example, the first material composition 333 may contain Al2O3, and the second material composition 334 may contain AlN. However, it should be understood that the first material composition 333 and the second material composition 334 may be reversed. Furthermore, in some embodiments, the first material composition 333 and the second material composition 334 may contain two solid solution phases. In embodiments, the solid solution phase increases monotonically in the radial direction. In other embodiments, the solid solution phase is configured to increase linearly along the composition gradient 335.

[0026] Next, we refer to Figure 3B, a plan view showing a pack 320 according to an additional embodiment. In this embodiment, the pack 320 comprises a substrate 330. The substrate 330 may contain a first material composition 336 at a first edge of the substrate 330 and a second material composition 337 at a second edge of the substrate 330. In this embodiment, a composition gradient 335 extends across the entire surface of the substrate 330 between the first material composition 336 and the second material composition 337.

[0027] In embodiments, the first material composition 336 and the second material composition 337 may be the same as the first material composition 231 and the second material composition 232 described in more detail above. For example, the first material composition 336 may contain Al2O3, and the second material composition 337 may contain AlN. However, it should be understood that the first material composition 336 and the second material composition 337 may be reversed. Furthermore, in some embodiments, the first material composition 336 and the second material composition 337 may contain two solid solution phases. In embodiments, the solid solution phase increases monotonically over the entire substrate 330. In other embodiments, the solid solution phase is configured to increase linearly along a composition gradient 335.

[0028] In the embodiments described above, a pair of material compositions are provided in the pack. However, it should be understood that the embodiments may include two or more different material compositions.

[0029] Next, we refer to Figure 4A, a cross-sectional view showing a pack 420 according to the embodiment. In this embodiment, the pack 420 comprises a substrate 430 and an electrode 421. As shown in the figure, a first material composition 431 is provided on the upper surface of the substrate 430, a second material composition 432 is provided on the bottom surface of the substrate 430, and a third material composition 438 is provided between the upper and bottom surfaces of the substrate 430.

[0030] In some embodiments, the first material composition 431 and the second material composition 432 contain the same material, while the third material composition 438 contains a different material composition. For example, the first material composition 431 and the second material composition 432 may contain Al2O3, and the third material composition 438 may contain AlN. Composition gradient 435 A However, it may be provided between the first material composition 431 and the third material composition 438, and the composition gradient 435 B However, it may be provided between the third material composition 438 and the second material composition 432.

[0031] In one embodiment, the third material composition 438 may be located midway between the first material composition 431 and the second material composition 432. In another embodiment, the distance between the third material composition 438 and the first material composition 431 may be different from the distance between the third material composition 438 and the second material composition 432. For example, the third material composition 431 may be closer to the first material composition 431 than to the second material composition 432, or vice versa.

[0032] Next, we refer to Figure 4B, a cross-sectional view showing a chuck 450 according to an embodiment. In this embodiment, the chuck 450 includes a pack 420 provided on a base plate 451. The chuck 450 may include a substrate 430 having a first material composition 431, a second material composition 432, and a third material composition 438. A compositional gradient 435 between the different material compositions A and 435 B A cooling channel may be provided. In this embodiment, the base plate 451 may include a cooling channel 452.

[0033] In this embodiment, pack 430 is diffusion-bonded to base plate 451. For example, the second material composition 432 and base plate 451 may contain the same material. By containing the same material at the contact surface, stress (caused by mismatch in thermal expansion coefficients (CTE)) is suppressed. Although a diffusion-bonded contact surface is illustrated, it should be understood that the embodiment may also include adhesive bonding between the second material composition 432 and base plate 451.

[0034] Next, we refer to Figure 4C, a cross-sectional view showing a pack 420 according to an additional embodiment. As shown in Figure 4C, the substrate 420 comprises three material compositions 431, 432, and 438. However, in contrast to the embodiments described in Figures 4A and 4B, the three material compositions 431, 432, and 438 are different material compositions. For example, the first material composition 431 may contain Al2O3, the second material composition 432 may contain a metal, and the third material composition 438 may contain AlN. Composition gradient 435 A and 435 B However, it may be provided between the material compositions 431, 432, and 438, penetrating the thickness of the substrate 420.

[0035] Next, we refer to Figure 4D, a cross-sectional view showing a chuck 450 according to an embodiment. In this embodiment, the chuck 450 includes a pack 420 provided on a base plate 451. The chuck 450 may include a substrate 430 having a first material composition 431, a second material composition 432, and a third material composition 438. A compositional gradient 435 between the different material compositions A and 435 B A cooling channel may be provided. In this embodiment, the base plate 451 may include a cooling channel 452.

[0036] In this embodiment, pack 430 is diffusion-bonded to base plate 451. For example, the second material composition 432 and base plate 451 may contain the same material. By containing the same material at the contact surface, stress (caused by CTE mismatch) is suppressed. Although a diffusion-bonded contact surface is illustrated, it should be understood that the embodiment may also include adhesive bonding between the second material composition 432 and base plate 451.

[0037] Next, we refer to Figure 5, a cross-sectional view showing a pack 520 according to an additional embodiment. In the embodiment, the pack 520 includes a substrate 530, an electrode 521, and a plurality of material composition layers. For example, the pack 520 may include a first material composition 531, a second material composition 532, and a third material composition 539. In the embodiment, the third material composition 539 may be provided on the upper surface of the substrate 530. The third material composition 539 may include a material resistant to etching chemicals (e.g., halogen etching chemicals). For example, the third material composition 539 may include Y2O3. In the illustrated embodiment, the third material composition 539 is directly above the first material composition 531. However, it should be understood that a composition gradient may be provided between the first material composition 531 and the third material composition 539. In the embodiment, a composition gradient 535 may be provided between the first material composition 531 and the second material composition 532.

[0038] Next, we refer to Figure 6, a cross-sectional view showing a pack 620 according to an additional embodiment. In the embodiment, the pack 620 may include a substrate 630 having embedded electrodes 621. In the embodiment, the first material composition 631 may be on top of the substrate 630, and the second material composition 632 may be on the bottom of the substrate 630. As shown, the material compositions 631 and 632 differ from each other in terms of average particle size. That is, the elemental materials of material compositions 631 and 632 may be the same, but their particle sizes differ. For example, the first material composition 631 may contain AlN having a first particle size, and the second material composition 632 may contain AlN having a second particle size. As shown, the second particle size is smaller than the first particle size. In the embodiment, a particle size gradient 641 may be provided through the thickness of the substrate 630 to transition from the first particle size to the second particle size. In other embodiments, the first material composition 631 and the second material composition 632 may have different elemental compositions and different average particle sizes. For example, the first material composition 631 may contain Al2O3 having a first particle size, and the second material composition 631 may contain AlN having a second (smaller) particle size.

[0039] Next, we refer to Figures 7A and 7B, a pair of cross-sectional views illustrating the process for forming a composition gradient according to the embodiment. Figure 7A shows a pack 720 having a substrate 730 and embedded electrodes 721. In the embodiment, the first material composition 761 may be provided on the bottom surface of the substrate 730. For example, the first material composition 761 may contain Al2O3 or AlN.

[0040] Herein, we refer to Figure 7B, a cross-sectional view showing pack 720 after the diffusion process according to the embodiment. For example, pack 720 may be exposed to high temperatures to facilitate the diffusion of a solid solution of the first material composition 761 into the substrate 730. As shown, a second material composition 762 may be provided on the upper surface of the substrate 730. The second material composition may contain a solid solution from the first material composition 761 in a lower proportion than the first material composition 761. The diffusion process may also form a composition gradient 765 over the thickness of the substrate 730.

[0041] In an embodiment, the first material composition 761 may be in an untreated state, partially sintered, or sintered. In some embodiments, the first material composition 761 may be a sacrificial layer. That is, the remaining portion of the first material composition may be removed after the diffusion process (e.g., using a grinding or polishing process).

[0042] Next, refer to FIGS. 8A and 8B, which are a pair of cross-sectional views showing a process for forming a composition gradient according to an embodiment. In FIG. 8A, a pack 820 having a substrate 830 and an embedded electrode 821 is shown. In an embodiment, the first material composition 861 may be provided at the center of the substrate 830. For example, the first material composition 861 may include Al2O3 or AlN.

[0043] Now, refer to FIG. 8B, which is a cross-sectional view showing the pack 820 after the diffusion process according to an embodiment. For example, the pack 820 may be exposed to a high temperature to promote the diffusion of the solid solution of the first material composition 861 into the substrate 830. As shown, a second material composition 862 A may be provided on the upper surface of the substrate 830, and a third material composition 862 B may be provided on the bottom surface of the substrate 830. The second material composition 862 A and the third material composition 862 B may include a solid solution from the first material composition 861 at a lower ratio than the first material composition 861. The diffusion process may also form a composition gradient 865 A and 865 B across the thickness of the substrate 830.

[0044] In FIGS. 7A to 8B, the diffusion process includes a physical layer that is a source of the material diffused through the substrate. However, it should be understood that the gradient may also be formed by other methods. For example, during the sintering process, the sintering environment (e.g., gas composition) can be changed (e.g., increasing or decreasing the gas concentration) to vary the amount of gas components incorporated into the substrate.

[0045] Next, we refer to Figure 9, a cross-sectional view showing a pack 920 according to an additional embodiment. In this embodiment, the pack 920 includes a substrate 930 and an embedded electrode 921. A first material composition 931 may be provided on the upper surface of the substrate 930, and a second material composition 932 may be provided on the bottom surface of the substrate 930. In this embodiment, a compositional gradient 935 between the first material composition 931 and the second material composition 932 may be provided through the thickness of the substrate 930. In this embodiment, a mesa 970 may be formed on the upper surface of the substrate 930. Although the embodiments shown so far have been illustrated without a mesa 970, it should be understood that any embodiment disclosed herein may also include a mesa similar to the mesa 970 in Figure 9.

[0046] It should be understood that the composition gradients described herein can take the form of various changes in material properties. For example, the composition gradients described herein may refer to changes in one or more of the material type, particle size, crystallite size, porosity, and material attributes (e.g., CTE, Young's modulus, Poisson's ratio, thermal conductivity, hardness, resistivity, etc.).

[0047] Furthermore, it should be understood that the embodiments described herein can be fabricated using a variety of processes. For example, packs with compositional gradients can be formed using green sheet lamination, hot pressing, cold isostatic pressing, electrostatic sintering, electrophoretic deposition, laser sintering, 3D printing, sol-gel, gel casting, or a combination thereof. In some embodiments, the entire ceramic body can be co-sintered or sintered in multiple steps. The sintering temperature may range from 20°C to 2000°C. In some embodiments, the gradient can be achieved during the sintering process by changing the ambient gas composition (e.g., changing the O2 gas, changing the partial pressure, changing the type of gas, etc.). The size of the raw material powder can vary from about 1 nm to a maximum of about 500 μm. In embodiments, the ceramic material may be piezoelectric (e.g., AlN, PZT, BaTiO3 base, SrTiO3 template, etc.). In other embodiments, the ceramic material may be piezoresistive. The thickness of the pack substrate may range from about 0.1 mm to about 20 mm.

[0048] Next, a block diagram showing an exemplary computer system 1000 of the processing tool according to the embodiment is shown, with reference to Figure 10. In the embodiment, the computer system 1000 is coupled to the processing tool and controls the processing within the processing tool. The computer system 1000 may be connected to other machines in a local area network (LAN), intranet, extranet, or the internet (e.g., network connection). The computer system 1000 may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 1000 may be a personal computer (PC), tablet PC, set-top box (STB), personal digital assistant (PDA), mobile phone, web appliance, server, network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specifies the actions to be performed by the machine. Furthermore, although only a single machine is illustrated in computer system 1000, the term “machine” also includes any set of machines (e.g., computers) that individually or collectively execute instruction sets (or instruction sets) for executing any one or more of the methods described herein.

[0049] The computer system 1000 may include a computer program product or software 1022 having instructions stored thereon on a non-transient machine-readable medium, which may be used to program the computer system 1000 (or other electronic device) to perform a process according to the embodiment. The machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media include machine (e.g., computer)-readable storage media (e.g., read-only memory ("ROM"), random-access memory ("RAM"), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine (e.g., computer)-readable transmission media (e.g., electrical, optical, acoustic, or other forms of transmitted signals (e.g., infrared signals, digital signals, etc.)), etc.

[0050] In this embodiment, the computer system 1000 includes a system processor 1002, main memory 1004 (e.g., read-only memory (ROM), flash memory, synchronous DRAM (SDRAM), or dynamic random access memory (DRAM) such as Rambus DRAM (RDRAM), etc.), static memory 1006 (e.g., flash memory, static random access memory (SRAM), etc.), and secondary memory 1018 (e.g., data storage device), which communicate with each other via a bus 1030.

[0051] The system processor 1002 represents one or more general-purpose processing units, such as a microsystem processor or a central processing unit. More specifically, the system processor may be a composite instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing another instruction set, or a system processor implementing a combination of instruction sets. The system processor 1002 may also be one or more special-purpose processing units, such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal system processor (DSP), or a network system processor. The system processor 1002 is configured to execute processing logic 1026 for performing the steps described herein.

[0052] The computer system 1000 may further include a system network interface device 1008 for communicating with other devices or machines. The computer system 1000 may also include a video display device 1010 (e.g., a liquid crystal display (LCD), a light-emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 1012 (e.g., a keyboard), a cursor control device 1014 (e.g., a mouse), and a signal generator 1016 (e.g., a speaker).

[0053] The secondary memory 1018 may include a machine-accessible storage medium 1031 (or more specifically, a computer-readable storage medium) storing one or more instruction sets (e.g., software 1022) that embody any one or more of the methods or functions described herein. The software 1022 may also reside, all or at least partially, in the main memory 1004 and / or the system processor 1002 while it is being executed by the computer system 1000, and the main memory 1004 and the system processor 1002 also constitute a machine-readable storage medium. The software 1022 may further be transmitted or received over the network 1061 via the system network interface device 1008. In embodiments, the network interface device 1008 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0054] Although the machine-accessible storage medium 1031 is shown as a single medium in the exemplary embodiment, the term “machine-readable storage medium” should be interpreted to include a single or multiple mediums that store one or more instruction sets (e.g., a centralized or distributed database, and / or associated caches and servers). Furthermore, the term “machine-readable storage medium” includes any medium capable of storing or encoding instruction sets for machine execution, allowing a machine to execute one or more methodologies. Therefore, the term “machine-readable storage medium” should be interpreted to include, but not be limited to, solid-state memory, optical media, and magnetic media.

[0055] The above specification has described specific exemplary embodiments. It will be apparent that various modifications can be made thereto without departing from the scope of the following claims. Therefore, this specification and the drawings should be understood as illustrative, not restrictive.

Claims

1. A pack for electrostatic chucks, A substrate having a top surface and a bottom surface, The first material composition on the upper surface of the substrate, A second material composition located on the bottom surface of the substrate, The compositional gradient across the substrate between the upper surface and the lower surface, A pack comprising a third material composition between the first material composition and the second material composition, wherein the composition gradient of the third material composition includes a first gradient between the first material composition and the third material composition and a second gradient between the third material composition and the second material composition.

2. The pack according to claim 1, wherein the first material composition comprises up to 100% of a first solid solution phase, and the second material composition comprises up to 100% of a second solid solution phase.

3. The first solid solution phase is Al ２ O ３ The pack according to claim 2, wherein the second solid solution phase comprises AlN.

4. The first solid solution phase contains AlN, and the second solid solution phase contains Al ２ O ３ The pack according to claim 2, including the pack described in claim 2.

5. The pack according to claim 1, wherein the first material composition comprises a first solid solution phase and a second solid solution phase, and the second material composition comprises a first solid solution phase and a second solid solution phase, and the proportion of the second solid solution phase in the second material composition is smaller than the proportion of the second solid solution phase in the first material composition.

6. The pack according to claim 1, wherein the first material composition and the second material composition each contain one or more of metal oxides, nitrides, carbides, borides, fluorides, silicides, and sulfides.

7. The pack according to claim 6, wherein the metal oxide comprises one or more of aluminum, copper, molybdenum, tungsten, and graphite.

8. The pack according to claim 7, wherein the metal contains 0.01% or more of the material composition.

9. The pack according to claim 1, wherein the first material composition is substantially the same as the second material composition.

10. The pack according to claim 1, wherein the first material composition, the second material composition, and the third material composition are different from each other.

11. The pack according to claim 1, wherein the first material composition comprises yttrium and oxygen, the second material composition comprises aluminum and nitrogen, and the third material composition comprises aluminum and oxygen.

12. The pack according to claim 1, wherein the first material composition has a first average particle size, and the second material composition has a second average particle size different from the first average particle size.

13. A pack for electrostatic chucks, circuit board and The first material composition in the substrate, The second material composition in the substrate, The compositional gradient between the first material composition and the second material composition and Equipped with, The composition gradient extends radially from the center of the substrate to the edge of the substrate. pack.

14. The pack according to claim 13, wherein the composition gradient is between the top and bottom surfaces of the substrate.

15. The pack according to claim 13, wherein the composition gradient is an asymmetric composition gradient.

16. It is an electrostatic chuck, base plate and A pack bonded to the base plate, wherein the pack is circuit board and The first material composition in the substrate, The second material composition in the substrate, The compositional gradient between the first material composition and the second material composition, A pack comprising: a third material composition between the first material composition and the second material composition, wherein the composition gradient of the third material composition includes a first gradient between the first material composition and the third material composition and a second gradient between the third material composition and the second material composition; and An electrostatic chuck equipped with this feature.

17. The electrostatic chuck according to claim 16, further comprising electrodes embedded in the substrate.

18. The electrostatic chuck according to claim 16, wherein a mesa is formed on the upper surface of the substrate.

19. A pack for an electrostatic chuck, A substrate having a top surface and a bottom surface, The first material composition on the upper surface of the substrate, A second material composition located on the bottom surface of the substrate, A compositional gradient extending across the substrate between the upper surface and the lower surface is provided, A pack for an electrostatic chuck, wherein the first material composition has a first average particle size, and the second material composition has a second average particle size different from the first average particle size.

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