Dopant complexes and electronic components

Abstract

Dopant complexes are disclosed. The dopant complexes may be formed from a dopant ion component encapsulated in a polymer matrix, the dopant ion component being a metal triflate, a metal halide, a metal antimonate, or any combination thereof, and the polymer matrix includes or consists of a hydroxyl-containing polymer. Further, electronic components and uses of the dopant complexes are disclosed.

Description

Technical Field

[0001] The present disclosure relates to dopant composites. The present disclosure further relates to electronic components. The present disclosure further relates to the use of dopant composites.

Background Art

[0002] Electronic components for various applications usually include a layer of conductive material on a substrate. The conductive material may be sensitive to the ambient environment, and thus protection thereof may be required. A dopant layer may be formed on the conductive material to protect the conductive material from, for example, the effects of humidity, moisture, and temperature. The inventor recognizes the need for a dopant that is compatible with the conductive material and at the same time thermally stable and protective to avoid the aging of electronic components.

Summary of the Invention

Means for Solving the Problems

[0003] A dopant composite is disclosed. This dopant composite is formed from a dopant ion component encapsulated in a polymer matrix, and this dopant ion component is a metal triflate (trifluoromethanesulfonate), a metal antimonate (antimonate), or a combination of any of these, and the polymer matrix includes a hydroxyl-containing polymer or consists of a hydroxyl-containing polymer.

[0004] Furthermore, an electronic component is disclosed. This electronic component includes a transparent layer including a transparent conductive material in direct contact with a dopant layer. The dopant layer is formed from a dopant composite formed from a dopant ion component encapsulated in a polymer matrix, and this dopant ion component is a metal triflate, a metal antimonate, or a combination of any of these, and the polymer matrix includes a hydroxyl-containing polymer or consists of a hydroxyl-containing polymer.

[0005] Furthermore, the use of a dopant complex formed from a dopant ion component encapsulated in a polymer matrix is ​​disclosed, the use of which is intended to improve the aging resistance of an electronic component including a transparent layer containing a transparent conductive material that is in direct contact with the dopant layer, by coating the transparent layer containing the transparent conductive material with a dopant layer formed from the dopant complex, wherein the dopant ion component is a metal triflate, a metal antimonate, or a combination thereof, and the polymer matrix contains or consists of a hydroxyl-containing polymer. [Brief explanation of the drawing]

[0006] To provide a further understanding of the embodiments, the accompanying drawings, which are included and constitute part of this specification, illustrate various embodiments.

[0007] [Figure 1] Figure 1 schematically shows a cross-sectional view of an electronic component according to one embodiment. [Modes for carrying out the invention]

[0008] This application relates to a dopant complex formed from dopant ion components encapsulated in a polymer matrix, wherein the dopant ion components are metal triflates, metal halides, metal antimonates, or a combination thereof, and the polymer matrix contains or comprises a hydroxyl-containing polymer.

[0009] This application relates to a dopant complex formed from dopant ion components encapsulated in a polymer matrix, wherein the dopant ion components are a metal triflate, a metal antimonate, or a combination thereof, and the polymer matrix contains or consists of a hydroxyl-containing polymer.

[0010] This application further relates to an electronic component comprising a transparent layer containing a transparent conductive material in direct contact with a dopant layer, wherein the dopant layer is formed from a dopant composite formed from dopant ion components encapsulated in a polymer matrix, the dopant ion components being a metal triflate, a metal halide, a metal antimonate, or a combination thereof, and the polymer matrix comprising or consisting of a hydroxyl-containing polymer.

[0011] The present application further relates to an electronic component comprising a transparent layer containing a transparent conductive material in direct contact with a dopant layer, wherein the dopant layer is formed from a dopant composite formed from dopant ion components encapsulated in a polymer matrix, the dopant ion components being a metallic triflate, a metallic antimonate, or a combination thereof, and the polymer matrix comprising or consisting of a hydroxyl-containing polymer.

[0012] In one embodiment, the electronic component further includes a non-conductive base layer. In one embodiment, the electronic component further includes a non-conductive base layer, a transparent layer containing a transparent conductive material, and a dopant layer are arranged to overlap each other in a vertical direction such that the transparent layer containing the transparent conductive material is located between the non-conductive base layer and the dopant layer.

[0013] In one embodiment, the electronic component is an optoelectronic component. In one embodiment, the electronic component is a sensor. In one embodiment, the electronic component is a touch sensor, a photovoltaic component, a heating component, a current conductor, a display component, a display electrode, a lighting component, a light switch, or a light control film.

[0014] In one embodiment, the electronic component is moldable, flexible, foldable, and / or stretchable, or the electronic component is moldable and / or stretchable, or the electronic component is moldable.

[0015] This application further relates to the use of a dopant composite formed from a dopant ion component encapsulated in a polymer matrix, the use of which improves the aging resistance of an electronic component including a transparent layer containing a transparent conductive material in direct contact with the dopant layer by coating the transparent layer containing the transparent conductive material with a dopant layer formed from the dopant composite, wherein the dopant ion component is a metal triflate, a metal halide, a metal antimonate, or a combination thereof, and the polymer matrix includes or consists of a hydroxyl-containing polymer.

[0016] This application further relates to the use of a dopant composite formed from a dopant ion component encapsulated in a polymer matrix, the use of which improves the aging resistance of an electronic component including a transparent layer containing a transparent conductive material in direct contact with the dopant layer by coating the transparent layer containing the transparent conductive material with a dopant layer formed from the dopant composite, wherein the dopant ion component is a metallic triflate, a metallic antimonate, or a combination thereof, and the polymer matrix contains or consists of a hydroxyl-containing polymer.

[0017] The inventors have surprisingly found that encapsulating dopant ion components in the polymer matrix can efficiently enhance the thermal stability and accelerated environmental stability of the dopant layer. Accelerated aging (degradation) is a test that may use harsh conditions such as heat, humidity, oxygen, sunlight, and vibration to accelerate the normal aging process of an article. This may also be called accelerated environmental testing. This may be used to help determine the long-term effects of expected stress levels in a shorter time than would normally be achieved by standard test methods controlled in a laboratory. Accelerated aging tests may be used to estimate the service life or shelf life of a product or article when actual life data is unavailable.

[0018] In this specification, unless otherwise specified, the expression "aging resistance" of an electronic component should be understood to mean the ability of the electronic component to resist electrical and / or optical aging caused by the surrounding environment. Therefore, aging resistance may be considered as the ability of an electronic component to withstand changing conditions such as humidity and temperature or combinations thereof. The aging resistance of an electronic component may also be called the aging performance of an electronic component.

[0019] Electrical aging may be determined by the increase in sheet resistance (SR) under accelerated environmental conditions. Low sheet resistance may be interpreted as indicating better electronic component performance, while high sheet resistance may be interpreted as indicating worse electronic component performance. Typically, an increase in sheet resistance of less than 10% is interpreted as a good value for the aging performance of optoelectronic electronic components. Sheet resistance can be measured using a four-point probe (manufactured by Jandel Engineering Limited) before the accelerated aging process, and then using an Agilent digital multimeter with two silver contacts. For each measurement, 18 square samples of 30 × 30 mm can be used.

[0020] The optical aging may be determined by changes in light transmittance, haze, and / or yellowness (b * ) under accelerated environmental conditions. Light transmittance, haze, and yellowness can be measured by a Hunterlab spectrometer according to standard ASTM D1003. Generally, in order for an electronic component to pass the test, it should be achieved that the changes in the transmittance, haze, and yellowness (b * ) values measured before and after the test under accelerated environmental conditions are small.

[0021] The dopant complex has the additional utility that the dopant ion component does not lose its doping factor (valence) even when encapsulated or complexed with a hydroxyl-containing polymer. That is, the doping efficiency is not impaired by encapsulation.

[0022] In one embodiment, the dopant ion component is a combination of a metal triflate, a metal halide, and a metal antimonate. In one embodiment, the dopant ion component is a combination of a metal triflate and a metal halide. In one embodiment, the dopant ion component is a combination of a metal triflate and a metal antimonate. In one embodiment, the dopant ion component is a combination of a metal halide and a metal antimonate.

[0023] In one embodiment, the metal triflate is copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, hafnium triflate, or any combination thereof. In one embodiment, the metal triflate is copper triflate or cerium triflate, or a combination thereof.

[0024] In one embodiment, the metal halide is gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, iron(III) chloride, antimony(V) chloride, or any combination thereof. In one embodiment, the metal halide is gold(III) chloride.

[0025] In one embodiment, the metal antimonate is sodium hexafluoroantimonate (sodium hexafluoroantimonic acid), silver hexafluoroantimonate (silver hexafluoroantimonic acid), or any combination thereof. In one embodiment, the metal antimonate is silver hexafluoroantimonate.

[0026] In one embodiment, the dopant ion component is selected from the group consisting of copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, hafnium triflate, gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, iron(III) chloride, antimony(V) chloride, sodium hexafluoroantimonate, silver hexafluoroantimonate, or any combination thereof. In one embodiment, the dopant ion component is selected from the group consisting of copper triflate or cerium triflate, gold chloride, silver hexafluoroantimonate, and any combination thereof.

[0027] In one embodiment, the dopant ion component is copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, hafnium triflate, gold(III) chloride trihydrate, gold(III) chloride, copper(II) chloride, nickel(II) chloride, aluminum(III) chloride, cerium(III) chloride, copper(I) iodide, iron(III) chloride, antimony(V) chloride, sodium hexafluoroantimonate, or silver hexafluoroantimonate.

[0028] In one embodiment, the dopant ion component is selected from the group consisting of copper triflate, cerium triflate, gold chloride, silver hexafluoroantimonate, and any combination thereof.

[0029] In one embodiment, the dopant ion component is a combination of cerium triflate and gold chloride.

[0030] In one embodiment, the dopant ion component is a combination of copper triflate and gold chloride.

[0031] The dopant complex may be formed by a two-step process in which the hydroxyl portion of the polymer matrix reacts with the metallic portion of the dopant ion component. As just one example, the formation of a complex between a copolymer of polyvinylphenol and polymethyl methacrylate and copper(III) triflate is shown below. RO-H + Cu 2+ → CuOR + + H + (1) RO-H + CuOR + → Cu-(OR)2+ H + (2) The encapsulation of dopant ion components into polymer copolymers occurs via the bonding of phenolic OH groups with divalent Cu ions.

[0032] The dopant complex may be produced by the following method: A dopant ion component solution at a concentration of 1-5 mM (e.g., 2.5 mM) is dissolved in a solvent or mixture of solvents containing, for example, ethanol, isopropanol, acetone, acetic acid, or methyl isobutyl ketone. The polymer concentration used may be 0.1-5%, for example, 1% or 0.5%. The concentration of the dopant ion component is selected so that the formed dopant layer does not reduce / degrade / affect the transparency of the transparent layer containing the transparent conductive material, and further, so that the dopant layer does not cause discoloration of the transparent layer containing the transparent conductive material over long aging test periods during accelerated environmental aging.

[0033] In one embodiment, the dopant complex is formed from dopant ion components complexed with a polymer matrix. In another embodiment, the dopant complex is formed from dopant ion components that are bound to or coupled to a polymer matrix.

[0034] In one embodiment, the weight ratio of the dopant ion component to the polymer matrix is ​​1:2 to 1:5, or 1:3 to 1:4.

[0035] Next, when a dopant layer formed from a dopant composite is formed on a transparent layer containing a transparent conductive material, such as carbon nanotubes, charge transfer may occur between the positively charged carbon nanotubes (CNTs) and the negatively charged dopant composite, thereby the dopant composite may bond to the carbon nanotubes, for example, via the mechanism presented below. [ka]

[0036] Encapsulating dopant ion components within a polymer matrix has the additional utility of allowing the formation of a dopant layer on a transparent layer containing a transparent conductive material, where the dopant ion components may not be freely available on the surface of the conductive material. As a result of encapsulation, the dopant ion components may not readily react with the surrounding environment, such as moisture or water, which is assumed to impair the electrical performance of the conductive material and accelerate its aging. While not bound by any particular theory regarding why the formed dopant composite is highly stable, its stability may be considered a result of its hydrogen bonding properties. In the case of electronic components, the stability of the dopant layer and protection from aging of the electronic component are desirable properties because they can affect the electrical and optical properties of the electronic component.

[0037] In this specification, the expression "hydroxyl-containing polymer" means a polymer having at least one hydroxyl group unless explicitly stated otherwise, and a hydroxyl group should be understood as an entity having the formula OH. A hydroxyl group contains oxygen bonded to hydrogen. That is, a hydroxyl-containing polymer is a polymer having at least one hydroxyl group bonded to its structure.

[0038] In one embodiment, the hydroxyl-containing polymer is polyvinylphenol, or a copolymer of polyvinylphenol and polymethyl methacrylate.

[0039] The negatively charged hydroxyl groups in hydroxyl-containing polymers may facilitate the accumulation of positive ions. For example, polar polyvinylphenol moieties in the polymer matrix may accelerate the binding of dopant ion components on the polymer, thus initiating dopant encapsulation. The hydroxyl groups may then deprotonate upon reaction with water or moisture, leaving negatively charged phenoxyl anions on the carbon nanotube surface, which maintains the balance of dopant ion components on the carbon nanotube surface. Furthermore, inserting, for example, less polar polymethyl methacrylate groups into a polar polyvinylphenol polymer may suppress water adsorption and improve aging resistance.

[0040] The nonconductive base layer, the transparent layer containing the transparent conductive material, and the dopant layer may be arranged in a vertically overlapping manner such that the transparent layer containing the transparent conductive material is located between the nonconductive base layer and the dopant layer. The expression "one layer is placed on top of another layer" ("on top of" another layer") should be understood, unless otherwise specified herein, to mean that one layer is placed in contact with or on another layer, or at least partially embedded within it. For example, the nonconductive base layer may function as a carrier or support structure for the transparent layer containing the transparent conductive material and the dopant layer.

[0041] In one embodiment, a transparent layer containing a transparent conductive material is in direct contact with a non-conductive base layer and a dopant layer.

[0042] In one embodiment, the non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material on or across the entire surface of the transparent layer containing the transparent conductive material. In one embodiment, the non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material on at least a portion of its surface. In one embodiment, the non-conductive base layer is formed to contact the transparent layer containing the transparent conductive material on only a portion of its surface. For example, a “freestanding region” may be formed to create an independent portion of the transparent layer containing the transparent conductive material that does not contact the non-conductive base layer.

[0043] In this specification, the terms “includes” and “equip” are used to mean including the following feature or action, but not excluding the presence of one or more additional features or actions.

[0044] It will become clearer that a reference to an item "a certain" refers to one or more of these items.

[0045] In this specification, unless otherwise explicitly stated, the expression "non-conductive" for the base layer should be understood to mean that the base layer has a sheet resistance of 10 M ohms per square.

[0046] In this specification, unless otherwise expressly stated, the term “transparent” should be understood to mean the optical transparency of a layer, or portion thereof, or material in the relevant wavelength range of interest. In other words, a “transparent” material or structure is one through which light, or generally electromagnetic radiation, of such relevant wavelengths can propagate. The relevant wavelength range may depend on the application in which the layer or electronic component is used. In one embodiment, the relevant wavelength range is the visible wavelength range of about 390 to about 700 nm. In one embodiment, the relevant wavelength range is the infrared wavelength range of about 700 to about 1000 nm.

[0047] Furthermore, the transparency of a layer or portion thereof primarily refers to the transparency in the thickness direction of the layer or portion thereof. Therefore, for it to be "transparent," a sufficient portion of the light energy incident on the layer or portion thereof must propagate through it in the thickness direction. Such a sufficient portion may depend on the application in which the layer or electronic component is used. In one embodiment, the transmittance of a layer or portion thereof is 20-99.99% of the energy of light incident perpendicularly thereto. In one embodiment, this transmittance is 20% or more, or 30% or more, or 40% or more, or 50% or more, or 60% or more, or 70% or more, or 80% or more, or 90% or more. The transmittance may be measured in accordance with the standards JIS-K7361 and ASTM D1003.

[0048] In one embodiment, the non-conductive base layer is a non-conductive, opaque base layer. In one embodiment, the non-conductive base layer is a non-conductive, transparent base layer. In one embodiment, the non-conductive base layer is translucent and / or opaque.

[0049] In one embodiment, the non-conductive base layer is made from a dielectric material. In one embodiment, the material used to form the non-conductive base layer should be suitable for serving as a substrate for a transparent layer and a dopant layer containing a transparent conductive material. In one embodiment, the non-conductive base layer contains or consists of a polymer or glass. In one embodiment, the non-conductive base layer is formed from a transparent plastic material. In one embodiment, the material for the non-conductive base layer is selected from the group consisting of polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), cyclic olefin polymer (COP), triacetate (TAC), cyclic olefin copolymer (COC), poly(vinyl chloride) (PVC), poly(ethylene 2,6-naphthalate) (PEN), polyimide (PI), polypropylene (PP), polyethylene (PE), and any combination thereof. In one embodiment, the material for the non-conductive base layer is selected from the group consisting of float glass (containing SiO2, Na2O, CaO, and MgO), soda lime, aluminosilicate glass, and borosilicate glass. However, the material for the non-conductive substrate layer is not limited to these examples.

[0050] In one embodiment, the non-conductive base layer has a thickness of 1 to 5000 μm, or 10 to 2000 μm, or 30 to 500 μm, or 50 to 300 μm. However, the non-conductive base layer may be thicker in some applications.

[0051] The transparent conductive material may include any suitable sufficiently transparent conductive material or any combination of such materials.

[0052] In one embodiment, the electronic component includes a transparent conductive material or includes a transparent layer made of a transparent conductive material.

[0053] In one embodiment, the transparent conductive material includes or consists of a conductive high aspect ratio molecular structure (HARMS) network or graphene. In one embodiment, the transparent conductive material includes or consists of a conductive high aspect ratio molecular structure (HARMS) network. In one embodiment, the transparent conductive material includes or consists of graphene.

[0054] A conductive "HARMS" or "HARM structure" refers to an electrically conductive "nanostructure," i.e., a structure having one or more characteristic dimensions on the nanometer scale, i.e., about 100 nanometers or less. "High aspect ratio" means that the dimensions of the conductive structure in two perpendicular directions are of significantly different orders of magnitude. For example, a nanostructure may have a length that is tens or hundreds of times greater than its thickness and / or width. In a HARMS network, numerous such nanostructures are interconnected to form a network of electrically interconnected molecules. Considered on a macroscopic scale, a HARMS network forms a solid monolithic material in which the individual molecular structures are oriented in a disorderly or unoriented manner, i.e., substantially randomly or oriented. Various types of HARMS networks can be fabricated in the form of thin, transparent layers with reasonable resistivity.

[0055] In one embodiment, the conductive HARM structure includes metal nanowires such as silver nanowires.

[0056] In one embodiment, the conductive HARM network includes carbon nanostructures. In one embodiment, these carbon nanostructures include carbon nanotubes, carbon nanobuds, carbon nanoribbons, or a combination thereof. In one embodiment, the carbon nanostructure includes carbon nanobuds, i.e., carbon nanobud molecules. The carbon nanobuds or carbon nanobud molecules have fullerene or fullerene-like molecules covalently bonded to the sides of tubular carbon molecules. Carbon nanostructures, and in particular carbon nanobuds, may offer advantages in terms of both electrical, optical (transparency), and mechanical (flexibility and / or deformability combined with robustness).

[0057] The thickness of the transparent layer containing the transparent conductive material may be designed according to the properties of the transparent conductive material, particularly its resistivity or electrical conductivity. For example, in the case of a transparent conductive material containing carbon nanostructures, the transparent layer may have a thickness of, for example, 1 to 1000 nm. In one embodiment, the thickness of the transparent layer containing the transparent conductive material is 0.1 to 1000 nm, or 10 to 100 nm, or 100 to 500 nm.

[0058] In one embodiment, the thickness of the dopant layer is 30-80 nm or 100-200 nm.

[0059] The non-conductive base layer may be provided by an extrusion process and / or a casting process. The non-conductive base layer may be formed from at least two layers of different materials or the same material. That is, the non-conductive base layer can be formed, for example, from extruded layers or coating layers arranged in stacks.

[0060] Depending on the material of the transparent layer containing the transparent conductive material, various existing procedures in the art may be used to provide the transparent layer containing the transparent conductive material. In the case of transparent conductive materials containing carbon nanostructures such as carbon nanobud molecules, deposition may be carried out using generally known methods such as filtration from the gas phase or liquid, deposition in a force field, or deposition from a solution using spray coating or spin drying. Carbon nanobud molecules can be synthesized, for example, using the method disclosed in International Publication No. 2007 / 057501, and deposited on a substrate, for example, directly from an aerosol stream with the assistance of electrophoresis or thermophoresis, or by the method described in Nasibulin et al., "Multifunctional Free-Standing Single-Walled 20 Carbon Nanotube Films," ACS NANO, Vol. 5, No. 4, 3214-3221, 2011.

[0061] In one embodiment, a transparent conductive material is formed or deposited on a non-conductive base layer in a predetermined pattern. In one embodiment, the predetermined pattern is formed on the transparent layer after the transparent conductive material is formed or deposited on the non-conductive base layer. Various processes may be used in this pattern formation. In one embodiment, a laser process, an etching process, direct printing, a mechanical process, a baking process, or any combination thereof is used for pattern formation. In one embodiment, the laser process is laser ablation. In one embodiment, the etching process is a photolithography process. In one embodiment, the pattern is formed simultaneously with or after the transparent layer containing the transparent conductive material is formed or deposited on the non-conductive base layer.

[0062] In one embodiment, the coating of a transparent layer containing a transparent conductive material with a dopant layer is performed by using at least one of the following processes: dip coating, slot die coating, meniscus coating, roller coating, screen printing, gravure coating, flexographic coating, offset coating, knife coating, or physical vapor growth.

[0063] In one embodiment, at least one metal conductor pad (metal contact pad) is provided. In one embodiment, at least one metal conductor pad is provided on a transparent layer containing a transparent conductor material. In one embodiment, at least one metal conductor pad is provided by using screen printing or inkjet printing. In one embodiment, at least one metal conductor pad includes silver, gold, copper, or any combination thereof.

[0064] The embodiments described above may be used in any combination with one another. Some of the embodiments may be combined together to form further embodiments. The dopant complexes, electronic components, or uses to which this application relates may include at least one of the embodiments described herein. It will be understood that the benefits and advantages described herein may relate to one embodiment or to several embodiments. The embodiments described above are not limited to solving any or all of the problems described or having any or all of the benefits and advantages described. It will be further understood that a reference to an item “some” refers to one or more of these items. The terms “includes” and “equip” are used herein to mean including the following feature or action, but not excluding the presence of one or more additional features or actions.

[0065] The electronic component described in this application has the additional benefit of improved aging resistance as a result of the conductive material being coated or protected by a dopant layer formed from the dopant composite. The dopant composite described in this application has the additional benefit of a polymer matrix that embeds the dopant ion components so that the dopant ion components are not freely available on the surface of the transparent layer containing the transparent conductive material and are prevented from reacting with the humidity and moisture of the surrounding environment. Furthermore, the dopant composite described in this application has the additional benefit of reducing hygroscopicity and thus reducing the reactivity of the dopant ion components to moisture and humidity. The dopant composite described in this application has the additional benefit of showing improved stability over long test periods, such as 2000 hours, even at high temperatures, for example, 120°C. [Examples]

[0066] The embodiments described below will now be referred to in detail, with examples shown in the attached drawings.

[0067] The following description discloses several embodiments in enough detail that a person skilled in the art can utilize dopant complexes and electronic components based on this disclosure. Not all steps of the embodiments are discussed in detail, as many of the steps of the embodiments are expected to be obvious to a person skilled in the art based on this specification.

[0068] For the sake of brevity, in the following exemplary embodiments, item numbers are maintained when components are repeated.

[0069] Figure 1 schematically shows a cross-sectional view of an electronic component 1 according to one embodiment described herein. From Figure 1, we can see the electronic component 1, which includes a non-conductive base layer 2, a transparent layer 3 containing a transparent conductive material, and a dopant layer 4. The non-conductive base layer 2, the transparent layer 3 containing the transparent conductive material, and the dopant layer 4 are arranged stacked on top of each other in the vertical direction. The transparent layer 3 containing the transparent conductive material is located between the dopant layer 4 and the non-conductive base layer 2. The transparent layer 3 containing the transparent conductive material is in direct contact with the dopant layer 4 and the non-conductive base layer.

[0070] Example 1 - Manufacturing of dopant complexes and electronic components In this embodiment, different sensors were fabricated as electronic components. These sensors included a non-conductive base layer, a transparent layer containing a transparent conductive material, and a dopant layer.

[0071] The materials used to manufacture the dopant complex and sensor are shown in the table below.

[0072] [Table 1]

[0073] In addition, the comparative example was prepared by preparing a similar sensor, except that the dopant ion component was not encapsulated in the polymer matrix, but used as an exposed dopant layer.

[0074] The materials used to manufacture the comparison sensor are shown in the table below.

[0075] [Table 2]

[0076] First, a dopant layer was prepared from a dopant complex formed from dopant ion components encapsulated in a polymer matrix. The dopant ion components used in this example were silver hexafluoroantimonate, gold(III) chloride, cerium(III) chloride, or copper(II) chloride, and the polymer matrix was a copolymer of polyvinylphenol and polymethyl methacrylate. In the comparative example, no polymer matrix was used to encapsulate the dopant ion components.

[0077] The dopant complex was prepared by the following method: A 2.5 mM dopant ion solution was dissolved in a mixed solvent of acetone:acetic acid:isopropanol in a ratio of 20:25:55. The polymer concentration used was 0.5%.

[0078] A transparent conductive material, in this example a transparent layer containing carbon nanobuds, was prepared. This transparent layer was placed on a non-conductive base layer, and then a dopant layer was placed on top of the transparent layer containing the transparent conductive material.

[0079] To evaluate the behavior of the formed sensors under changes in climatic or environmental conditions such as humidity and temperature, accelerated aging tests were conducted. The sensor aging process involved maintaining the sensors at 85°C and 85% relative humidity (RH) for 100 hours in a laboratory setting. The apparatus used was a Model Weiss WKL100 environmental chamber. Sheet resistance (ohms per square) was measured for each of the sensors. Sheet resistance was measured after the accelerated aging test; before the accelerated aging test, the sheet resistance was measured using a four-point probe (Jandel Engineering Limited), and then measured using two silver contacts with an Agilent digital multimeter. Eighteen 30×30mm square carbon nanopad samples were used for each measurement. The results are shown in the table below.

[0080] [Table 3]

[0081] As can be seen from the table above, sensors formed from dopant ion components composited with polyvinylphenol and polymethyl methacrylate copolymers have a smaller increase in sheet resistance and, therefore, greater aging resistance compared to sensors formed using exposed dopant ion components.

[0082] Example 2 - Manufacturing of dopant complex and sensor In Example 1, further sensors were manufactured according to the procedure described above, as shown in the table below.

[0083] To evaluate the behavior of the formed sensors under varying conditions such as humidity and temperature, accelerated aging tests were conducted. In this test, the sensor aging process was carried out in a laboratory by maintaining the sensors at a temperature of 85°C and 85% relative humidity (RH) or 120°C for 2000 hours. The equipment used was an environmental chamber of model Espec SH-241 and a heating oven of model Memmert Universal Oven UN30-1060.

[0084] The sheet resistance (ohms per square) was measured for each sensor. Sheet resistance measurements were performed after the sensors were subjected to accelerated aging. Before accelerated aging, sheet resistance was measured using a four-point probe (Jandel Engineering Limited), and then measured again using an Agilent digital multimeter with two silver contacts. Eighteen 30×30mm CNB square samples were used for each measurement. The results can be seen in the table below.

[0085] [Table 4]

[0086] As can be seen from the table above, sensors formed from dopant ion components composited with polyvinylphenol and polymethyl methacrylate copolymers have lower sheet resistance and, therefore, greater aging resistance compared to sensors formed using exposed dopant ion components.

[0087] Example 3 - Manufacturing of Dopant Complexes and Electronic Components In this example, 5 mM copper triflate was mixed with 1% polyvinylphenol and polymethyl methacrylate copolymer (PVP-co-PMMA) in a solvent mixture containing 100 ml of acetone, 150 ml of acetic acid, and 250 ml of isopropanol. As a result of the complex formation reaction, the copper triflate dopant ion component was coupled with the polymer matrix. The resulting dopant complex was obtained as a transparent dispersion.

[0088] An electronic component, in this example a sensor, was prepared on a 250 μm polycarbonate substrate serving as a non-conductive base layer on which a layer of carbon nanopads was deposited. A dopant layer was then dip-coated onto the carbon nanopad layer. The dopant layer was approximately 50 nm thick. An acrylic topcoat layer of approximately 400 nm was deposited on top of the dopant layer.

[0089] The measured sheet resistance of this sensor was 35 ohms per square. Optical values ​​were measured for this sensor before and after reliability testing. The results are shown in the table below.

[0090] [Table 5]

[0091] As can be seen from the table above, the difference in values ​​measured before and after reliability testing was quite small for the values ​​reported by state-of-the-art optoelectronic sensors.

[0092] As technology advances, it will be obvious to those skilled in the art that the basic idea may be implemented in various ways. Therefore, the embodiments are not limited to the examples given above. Instead, the embodiments may vary within the scope of the claims.

Claims

1. A dopant complex formed from dopant ion components encapsulated in a polymer matrix, The dopant ion component is a metal triflate such as copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, or hafnium triflate; a metal antimonate such as sodium hexafluoroantimonate or silver hexafluoroantimonate; or any combination thereof; and the polymer matrix contains or consists of a hydroxyl-containing polymer. The dopant complex is formed from the dopant ion components coupled to the polymer matrix, A dopant complex in which the hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ion component.

2. The dopant complex according to claim 1, wherein the hydroxyl-containing polymer is polyvinylphenol, or a copolymer of polyvinylphenol and polymethyl methacrylate.

3. An electronic component (1) comprising a transparent layer (3) containing a transparent conductive material that is in direct contact with a dopant layer (4), The dopant layer is formed from a dopant complex formed from dopant ion components encapsulated in a polymer matrix. The dopant ion component is a metal triflate such as copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, or hafnium triflate; a metal antimonate such as sodium hexafluoroantimonate or silver hexafluoroantimonate; or any combination thereof; and the polymer matrix contains or consists of a hydroxyl-containing polymer. The dopant complex is formed from the dopant ion components coupled to the polymer matrix, An electronic component in which the hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ion component.

4. The electronic component (1) further comprises a nonconductive base layer (2), wherein the nonconductive base layer, the transparent layer (3) containing the transparent conductive material, and the dopant layer (4) are arranged to be stacked on top of each other in the vertical direction such that the transparent layer containing the transparent conductive material is located between the nonconductive base layer and the dopant layer, as described in claim 3.

5. The electronic component according to claim 3 or 4, wherein the hydroxyl-containing polymer is polyvinylphenol, or a copolymer of polyvinylphenol and polymethyl methacrylate.

6. The transparent conductive material comprises or consists of a conductive high aspect ratio molecular structure (HARMS) network or graphene, or the electronic component according to any one of claims 3 to 5.

7. The electronic component is moldable, flexible, foldable, and / or stretchable, or the electronic component is moldable and / or stretchable, or the electronic component is moldable, according to any one of claims 3 to 6.

8. The electronic component is the electronic component according to any one of claims 3 to 7, wherein the electronic component is a touch sensor, a photovoltaic component, a heating component, a current conductor, a display component, a display electrode, a lighting component, a light switch, or a light control film.

9. The use of a dopant complex formed from dopant ion components encapsulated in a polymer matrix, The aforementioned use is intended to improve the aging resistance of an electronic component including a transparent layer containing a transparent conductive material that is in direct contact with the dopant layer, by covering the transparent layer containing the transparent conductive material with the dopant layer formed from the dopant composite. The dopant ion component is a metal triflate such as copper triflate, cerium triflate, aluminum triflate, holmium triflate, terbium triflate, nickel triflate, or hafnium triflate; a metal antimonate such as sodium hexafluoroantimonate or silver hexafluoroantimonate; or any combination thereof. The polymer matrix contains a hydroxyl-containing polymer or consists of a hydroxyl-containing polymer. The dopant complex is formed from the dopant ion components coupled to the polymer matrix, The hydroxyl portion of the polymer matrix reacts with the metal portion of the dopant ion component.

10. The use of the dopant composite according to claim 9, wherein the electronic component further comprises a nonconductive base layer, the nonconductive base layer (2), the transparent layer (3) containing the transparent conductive material, and the dopant layer (4) are arranged to be stacked on top of each other in the vertical direction such that the transparent layer containing the transparent conductive material is located between the nonconductive base layer and the dopant layer and is in direct contact with the dopant layer.

11. The use according to claim 9 or 10, wherein the hydroxyl-containing polymer is polyvinylphenol, or a copolymer of polyvinylphenol and polymethyl methacrylate.

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