Indication device

Oxide semiconductors with dual gate electrodes address the limitations of amorphous and polycrystalline silicon transistors, enabling high-speed, low-power operation and cost-effective manufacturing of display devices with increased pixel density on glass or plastic substrates.

JP7894980B2Active Publication Date: 2026-07-24SEMICON ENERGY LAB CO LTD
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Filing Date
2025-06-05
Publication Date
2026-07-24

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Abstract

To provide a display device capable of a problem that, as the display device becomes higher definition, the number of pixels increases, the number of gate lines, and the number of signal lines increase, and as the number of gate lines and signal lines increases, it becomes difficult to mount an IC chip that has a drive circuit to drive them by bonding or the like, resulting in an increase of manufacturing costs.SOLUTION: At least a part of a circuit of the drive circuit that has a pixel part and a drive circuit that drives the pixel part on an identical substrate is composed of a thin film transistor using an oxide semiconductor sandwiched between the gate electrodes on the top and bottom. The manufacturing cost is reduced by providing the pixel part and the drive circuit on the identical substrate.SELECTED DRAWING: Figure 1
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Citation Information

Patent Citations

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  • JP2007096055A

  • JP2007123861A

  • JP2007207413A

  • JP2008089874A