Film forming device

Abstract

To provide a technology that can inhibit a substrate from sliding on a substrate support.SOLUTION: A deposition device according to an aspect of the present disclosure has a processing vessel and a substrate support portion provided in the processing vessel and having a recess on which a substrate is placed, the recess has a projection on its bottom surface, the projection is provided along the perimeter of the substrate placed in the recess.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure relates to a film forming apparatus.

Background Art

[0002] There is known an apparatus that performs a process by supplying a process gas to a circular substrate placed on a rotating table in a processing container while revolving the substrate (see, for example, Patent Documents 1 and 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing the sliding of a substrate on a substrate support portion.

Means for Solving the Problems

[0005] A film forming apparatus according to an aspect of the present disclosure includes a processing container and a substrate support portion provided in the processing container and having a recess for placing a substrate. The recess has a protrusion on the bottom surface, and the protrusion is provided along the outer periphery of the substrate placed in the recess. circular 凹部を有する基板支持部と、を備え、前記凹部は、底面に to be established 突起 And, multiple first surfaces extending along the circumferential direction, and multiple second surfaces extending along the circumferential direction, を有し、前記突起は、前記凹部に載置される前記基板の外周に沿って設けら Furthermore, the plurality of second surfaces are located radially outward from the plurality of first surfaces, and the plurality of first surfaces and the plurality of second surfaces are arranged alternately along the circumferential direction. 。

Effects of the Invention

[0006] According to the present disclosure, it is possible to suppress the sliding of a substrate on a substrate support portion.

Brief Description of the Drawings

[0007] [Figure 1] This is a longitudinal cross-sectional view showing a film deposition apparatus according to an embodiment. [Figure 2] This is a plan view showing the inside of a film deposition apparatus according to the embodiment. [Figure 3] This is a plan view showing the inside of a film deposition apparatus according to the embodiment. [Figure 4] This is a perspective view showing the inside of the film deposition apparatus according to the embodiment. [Figure 5] This is a plan view showing a part of the rotary table relating to the first example. [Figure 6] This is a cross-sectional view taken along line AA in Figure 5. [Figure 7] This is a plan view showing a part of the rotary table relating to the second example. [Figure 8] This is a cross-sectional view taken along the line BB in Figure 7. [Figure 9] This is a plan view showing a part of the rotary table relating to the third example. [Figure 10] This is a cross-sectional view taken along the line CC in Figure 9. [Figure 11] This is a cross-sectional view taken along the DD line in Figure 9. [Figure 12] This is a plan view showing a portion of the rotary table relating to the fourth example. [Figure 13] This figure shows the percentage of substrate slippage that occurs. [Figure 14] This figure shows the particle generation rate. [Modes for carrying out the invention]

[0008] Hereinafter, exemplary embodiments of the present disclosure, not limited to those described herein, will be described with reference to the attached drawings. In all attached drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] [Film forming equipment] Referring to FIGS. 1 to 4, a film forming apparatus according to an embodiment will be described. FIG. 1 is a longitudinal sectional view showing the film forming apparatus according to the embodiment. FIG. 2 is a plan view showing the inside of the film forming apparatus according to the embodiment. FIG. 3 is a plan view showing the inside of the film forming apparatus according to the embodiment. FIG. 4 is a perspective view showing the inside of the film forming apparatus according to the embodiment.

[0010] The film forming apparatus according to the embodiment includes a processing container 1 and a rotary table 2.

[0011] The processing container 1 has a circular shape in plan view. The processing container 1 has a top plate 11 and a container body 12. The top plate 11 closes the opening on the upper surface of the container body 12. The top plate 11 is detachably provided on the container body 12. A separation gas supply pipe 51 is connected to the center of the top plate 11. The separation gas supply pipe 51 supplies separation gas to the central region C in the processing container 1. Thereby, mixing of different processing gases in the central region C in the processing container is suppressed. The separation gas may be, for example, nitrogen (N2) gas. A seal member 13 is provided at the periphery of the upper surface of the container body 12. The seal member 13 has a ring shape.

[0012] Above the bottom 14 of the processing container 1, a heater unit 7 which is a heating part is provided. The heater unit 7 heats the substrate W on the rotary table 2. The substrate W may be, for example, a semiconductor wafer. A cover member 7a is provided on the side of the heater unit 7. Above the heater unit 7, a covering member 7b is provided. The covering member 7b covers the heater unit 7. A plurality of purge gas supply pipes 73 are provided on the bottom 14. The plurality of purge gas supply pipes 73 are provided along the circumferential direction of the processing container 1. Each purge gas supply pipe 73 is provided below the heater unit 7. Each purge gas supply pipe 73 supplies purge gas to the space where the heater unit 7 is disposed. The purge gas may be, for example, N2 gas.

[0013] The rotary table 2 is rotatably provided within the processing vessel 1. The rotary table 2 has a rotation center at the center of the processing vessel 1. The rotary table 2 is formed of, for example, quartz. The rotary table 2 is fixed to a core portion 21 having a generally cylindrical shape at the central portion. The rotary table 2 is configured to be rotatable about a vertical axis (e.g., clockwise) by a rotary shaft 22 that is connected to the lower surface of the core portion 21 and extends in the vertical direction. The lower end of the rotary shaft 22 is connected to a drive unit 23. The drive unit 23 rotates the rotary shaft 22 about the vertical axis. The rotary shaft 22 and the drive unit 23 are housed in a case body 20. The upper end of the case body 20 is airtightly attached to the lower surface of the bottom portion 14 of the processing vessel 1. A purge gas supply pipe 72 is provided in the case body 20. The purge gas supply pipe 72 supplies purge gas to the region below the rotary table 2. The purge gas may be, for example, N2 gas. The outer periphery of the core portion 21 at the bottom portion 14 forms a protruding portion 12a that is formed in a ring shape so as to approach the rotary table 2 from below.

[0014] A recess 24 is provided on the surface of the rotary table 2. The recess 24 has a circular shape in plan view. A substrate W is placed in the recess 24. A plurality (e.g., five) of recesses 24 are provided along the rotation direction of the rotary table 2 (the direction indicated by arrow A in FIGS. 2 and 3). Each recess 24 has a size slightly larger than that of the substrate W. A plurality of through holes 24a are provided in the recess 24. Lift pins (not shown) for lifting and lowering the substrate W from below are inserted through the plurality of through holes 24a. Details of the recess 24 will be described later.

[0015] Gas nozzles 31, 32, 34, 41, and 42 are provided at positions opposite to the passage area of ​​the recess 24. The gas nozzles 31, 32, 34, 41, and 42 are arranged radially at intervals from each other in the circumferential direction of the processing container 1. Each gas nozzle 31, 32, 34, 41, and 42 is made of, for example, quartz. Each gas nozzle 31, 32, 34, 41, and 42 is mounted so as to extend horizontally from the side wall of the processing container 1 toward the central region C, facing the substrate W. For example, when viewed from the transport port 15 described later, the gas nozzles 34, 41, 31, 42, and 32 are arranged in this order in a clockwise direction (the direction of rotation of the rotary table 2).

[0016] Gas nozzle 31 is connected to a supply source for a first processing gas. The first processing gas may be, for example, a silicon-containing gas. Gas nozzle 32 is connected to a supply source for a second processing gas. The second processing gas may be a gas that reacts with the first processing gas to produce reaction products. The second processing gas may be, for example, a nitride gas. The second processing gas may also be an oxidizing gas. Gas nozzle 34 is connected to a supply source for a plasma generating gas. The plasma generating gas may be, for example, a mixture of argon (Ar) gas and oxygen (O2) gas. Gas nozzles 41 and 42 are connected to a supply source for a separation gas. The separation gas may be, for example, N2 gas. Multiple gas discharge holes are provided on the lower surfaces of gas nozzles 31, 32, 34, 41, and 42 along the radial direction of the rotary table 2.

[0017] The area below the gas nozzle 31 becomes a first processing area P1 for adsorbing the first processing gas onto the substrate W. The area below the gas nozzle 32 becomes a second processing area P2 for reacting the first processing gas and the second processing gas adsorbed onto the substrate W. The areas below the gas nozzles 41 and 42 become separation areas D, which separate the first processing area P1 and the second processing area P2, respectively.

[0018] As shown in Figures 2 and 3, the top plate 11 of the processing container 1 in the separation region D is provided with a roughly fan-shaped convex portion 4. The gas nozzles 41 and 42 are housed within the convex portion 4. On both sides of the rotating table 2 in the circumferential direction of the gas nozzles 41 and 42, a first ceiling surface, which is the lower surface of the convex portion 4, is positioned to prevent mixing of the processing gases. On both sides of the first ceiling surface in the circumferential direction, a second ceiling surface, which is higher than the first ceiling surface, is positioned. The peripheral edge of the convex portion 4 is bent in an L-shape so as to face the outer end surface of the rotating table 2 and be slightly separated from the container body 12, in order to prevent mixing of the processing gases.

[0019] A plasma generation unit 80 is provided above the gas nozzle 34. The plasma generation unit 80 generates plasma from the plasma generation gas discharged from the gas nozzle 34. The plasma generation unit 80 is positioned to span the passage area of ​​the substrate W from the center to the outer periphery of the rotary table 2. The plasma generation unit 80 has an antenna 83. The antenna 83 is constructed by winding a metal wire into a coil. The antenna 83 is positioned to be airtightly partitioned from the internal area of ​​the processing container 1. The antenna 83 is electrically connected to a high-frequency power supply 85 via a matching unit 84. The high-frequency power supply 85 outputs RF power at, for example, 13.56 MHz.

[0020] The top plate 11 above the gas nozzle 34 opens in a roughly fan shape in plan view. This opening is airtightly sealed by the housing 90. The housing 90 is made of, for example, quartz. The housing 90 is formed such that its peripheral edge extends horizontally in a flange-like manner in the circumferential direction, and its central part is recessed toward the internal region of the processing container 1. The housing 90 houses the antenna 83 inside. A sealing member 11a is provided between the housing 90 and the top plate 11. A pressing member 91 is provided on the peripheral edge of the housing 90 to press the peripheral edge of the housing 90 downward. The plasma generating unit 80, the matching unit 84, and the high-frequency power supply 85 are electrically connected by connecting electrodes 86.

[0021] The lower surface of the housing 90 has a projection 92 for gas regulation, as shown in Figure 1, which extends vertically downward (towards the rotary table 2) along its peripheral edge to prevent N2 gas, ozone (O3) gas, etc. from entering the area below the housing 90. The gas nozzle 34 is housed in the area enclosed by the inner surface of the projection 92, the lower surface of the housing 90, and the upper surface of the rotary table 2.

[0022] A Faraday shield 95 is provided between the housing 90 and the antenna 83, as shown in Figures 1 and 3. The Faraday shield 95 has a generally box-like shape with an open top. The Faraday shield 95 is made of a conductive plate-like material. The Faraday shield 95 is grounded. A slit 97 is provided on the bottom surface of the Faraday shield 95. The slit 97 is provided below the antenna 83 in the circumferential direction. The slit 97 is formed to extend in a direction perpendicular to the winding direction of the antenna 83. The slit 97 prevents the electric field from moving toward the substrate W below and allows the magnetic field to reach the substrate W. An insulating plate 94 is provided between the Faraday shield 95 and the antenna 83. The insulating plate 94 electrically insulates the Faraday shield 95 from the antenna 83. The insulating plate 94 is made of, for example, quartz.

[0023] A ring-shaped side ring 100 is positioned outside the rotary table 2 and slightly below it. A first exhaust port 61 and a second exhaust port 62 are provided on the upper surface of the side ring 100, spaced apart from each other in the circumferential direction. The first exhaust port 61 is formed between the gas nozzle 31 and the separation region D located downstream of the gas nozzle 31 in the rotational direction of the rotary table, and is positioned closer to the separation region D. The second exhaust port 62 is formed between the gas nozzle 34 and the separation region D located downstream of the gas nozzle 34 in the rotational direction of the rotary table, and is positioned closer to the separation region D.

[0024] The first exhaust port 61 exhausts the first processing gas and the separated gas. The second exhaust port 62 exhausts the plasma generation gas in addition to the second processing gas and the separated gas. A groove-shaped gas passage 101 is formed on the upper surface of the side ring 100 on the outer edge side of the housing 90 to allow the gas to pass through to the second exhaust port 62 while avoiding the housing 90. As shown in Figure 1, the first exhaust port 61 and the second exhaust port 62 are each connected to the vacuum pump 64 by exhaust pipes 63, each equipped with a pressure adjustment unit 65 such as a butterfly valve.

[0025] A projection 5 is provided in the center of the lower surface of the top plate 11. As shown in Figure 2, the projection 5 is formed in a roughly ring shape circumferentially, continuous with the central region C side of the convex portion 4. The lower surface of the projection 5 may be at the same height as the lower surface of the convex portion 4, for example. A labyrinth structure 110 is formed above the core portion 21, which is closer to the rotation center of the rotary table 2 than the projection 5. The labyrinth structure 110 suppresses the mixing of the first processing gas and the second processing gas in the central region C. The labyrinth structure 110 has a first wall portion 111 and a second wall portion 112. The first wall portion 111 extends vertically circumferentially from the rotary table 2 side toward the top plate 11 side. The second wall portion 112 extends vertically circumferentially from the top plate 11 side toward the rotary table 2. The first wall portion 111 and the second wall portion 112 are arranged alternately in the radial direction of the rotary table 2.

[0026] A transport port 15 is provided on the side wall of the processing container 1. As shown in Figures 2 and 3, the transport port 15 is an opening for transferring the substrate W between an external transport arm (not shown) and a rotary table 2. The transport port 15 is airtightly opened and closed by a gate valve G. Below the rotary table 2 at the same angular position as the transport port 15, a lifting pin (not shown) is provided through a through hole 24a in the rotary table 2 for lifting the substrate W.

[0027] The film deposition apparatus has a control unit 120. The control unit 120 may be, for example, a computer. The control unit 120 controls the operation of the entire apparatus. Programs for performing various processes are stored in the memory of the control unit 120. The programs are structured in steps to execute the operations of the film deposition apparatus and are installed into the control unit 120 from a storage medium such as a hard disk, compact disk, magneto-optical disk, memory card, or flexible disk, which is a storage unit 121.

[0028] [Rotating table] Referring to Figures 5 and 6, a first example of a rotary table 210 that can be applied as rotary table 2 will be described. Figure 5 is a plan view showing a part of the rotary table 210 according to the first example. Figure 6 is a cross-sectional view taken along line AA in Figure 5. In Figure 5, the substrate W is not shown.

[0029] The rotary table 210 has a plurality of recesses 211 provided along the direction of rotation. The substrate W is placed in the recesses 211. The inner diameter of the recesses 211 is larger than the outer diameter of the substrate W placed in the recesses 211. In one example, the outer diameter of the substrate W is 300 mm, and the inner diameter of the recesses 211 is 302 mm. The recesses 211 have a bottom surface 211a, a side surface 211b, and a top surface 211c.

[0030] A projection 212 is provided on the bottom surface 211a. The projection 212 is provided along the outer circumference of the substrate W placed in the recess 211. In this case, the outer circumference of the substrate W is supported by the projection 212, and a film with a high coefficient of friction is formed on the surface of the projection 212 by gas that enters the vicinity of the projection 212 through the gap between the outer circumference of the substrate W and the side surface 211b of the recess 211. This suppresses the substrate W from sliding within the recess 211. In a plan view, the projection 212 has a ring shape that extends along the outer circumference of the substrate W. The height of the projection 212 may be lower than the height of the top surface 211c of the recess 211. The height of the projection 212 may be, for example, 5 μm or more and 50 μm or less. Preferably, the height of the projection 212 is 10 μm or more and 20 μm or less. In this case, the outer circumference of the substrate W is more easily supported by the projection 212. The width of the projection 212 may be, for example, 5 mm or less. The projection 212 is formed integrally with, for example, the rotary table 210. The projection 212 may also be formed separately from the rotary table 210.

[0031] A groove 213 is provided on the bottom surface 211a. The groove 213 is provided on the outside of the projection 212. The groove 213 has a ring shape in plan view. The boundary between the projection 212 and the groove 213 is located, for example, inside the outer edge of the substrate W. The boundary between the projection 212 and the groove 213 may be at the same position as the outer edge of the substrate W, or it may be located outside the outer edge of the substrate W. The groove 213 is optional. If the groove 213 is not provided, the gas intrusion path to the vicinity of the projection 212 will be shortened.

[0032] The rotary table 210 described above has a plurality of recesses 211 provided along the direction of rotation, and each recess 211 has a projection 212 provided along the outer circumference of the substrate W on which the substrate W is placed. In this case, the outer circumference of the substrate W is supported by the projection 212, and a film with a high coefficient of friction is formed on the surface of the projection 212 by gas that enters the vicinity of the projection 212 through the gap between the outer circumference of the substrate W and the side surface 211b. Therefore, it is possible to suppress the substrate W from sliding within the recess 211. As a result, it is possible to suppress the substrate W from contacting and sliding against the side surface 211b, and thus the generation of particles caused by sliding between the substrate W and the side surface 211b can be suppressed.

[0033] In contrast, if there is no projection 212 in the recess 211, when a pressure difference is created between the top and bottom of the substrate W due to a change in pressure inside the processing container 1, the frictional force between the bottom surface 211a and the bottom surface of the substrate W decreases. When this frictional force decreases, the centrifugal force generated by the rotation of the rotary table 210 causes the substrate W to slide on the bottom surface 211a and come into contact with the side surface 211b. In this state, if the substrate W expands due to heat or if the lift pins raise or lower the substrate W, the substrate W and the side surface 211b slide against each other, generating particles.

[0034] Referring to Figures 7 and 8, a second example of a rotary table 220 that can be applied as rotary table 2 will be described. Figure 7 is a plan view showing a part of the rotary table 220 according to the second example. Figure 8 is a cross-sectional view taken along the line BB in Figure 7. In Figure 7, the substrate W is not shown.

[0035] The rotary table 220 differs from the rotary table 210 in that it has an inclined surface 221b instead of a side surface 211b. Other configurations may be the same as those of the rotary table 210. The following explanation will focus on the differences from the rotary table 210.

[0036] The rotary table 220 has a plurality of recesses 221 provided along the direction of rotation. Each recess 221 has a bottom surface 221a, an inclined surface 221b, and an upper surface 221c.

[0037] The bottom surface 221a is provided with a projection 222 and a groove 223. The projection 222 and groove 223 may be the same as the projection 212 and groove 213, respectively.

[0038] The inclined surface 221b is tilted so as to widen outward from the bottom surface 221a towards the top surface 221c. In this case, the conductance of the gap between the outer circumference of the substrate W and the inclined surface 221b increases, making it easier for gas to enter the projection 222 from this gap. As a result, a film with a high coefficient of friction is formed on the surface of the projection 222 at an early stage.

[0039] The same effect as that of the rotary table 210 is achieved with the rotary table 220 described above.

[0040] Referring to Figures 9 to 11, a third example of a rotary table 230 that can be applied as rotary table 2 will be described. Figure 9 is a plan view showing a part of the rotary table 230 according to the third example. Figure 10 is a cross-sectional view taken along the line CC in Figure 9. Figure 11 is a cross-sectional view taken along the line DD in Figure 9. In Figure 9, the substrate W is not shown.

[0041] The rotary table 230 differs from the rotary table 210 in that, instead of the side surface 211b, it has a side surface 231b that is enlarged in a part of the circumferential direction. The other configurations may be the same as those of the rotary table 210. The following explanation will focus on the differences from the rotary table 210.

[0042] The rotary table 230 has a plurality of recesses 231 provided along the direction of rotation. Each recess 231 has a bottom surface 231a, a side surface 231b, and a top surface 231c.

[0043] The bottom surface 231a is provided with a projection 232 and a groove 233. The projection 232 and groove 233 may be the same as the projection 212 and groove 213, respectively.

[0044] The inner diameter of the side surface 231b is enlarged in at least a portion of the circumferential direction. The inner diameter of the recess 231 in the portion of the side surface 231b where the inner diameter is enlarged may be, for example, 304 mm. The side surface 231b may consist of alternating first side surfaces 231b1 that are not enlarged and second side surfaces 231b2 that are enlarged, along the circumferential direction of the recess 231. In one example, four first side surfaces 231b1 and four second side surfaces 231b2 are arranged alternately.

[0045] In the circumferential direction of the recess 231, the gap between the outer edge of the substrate W and the second side surface 231b2 is larger than the gap between the outer edge of the substrate W and the first side surface 231b1. In this case, the conductance of the gap between the outer circumference of the substrate W and the side surface 231b is large, and gas can easily enter from this gap toward the projection 232. As a result, a film with a high coefficient of friction is formed on the surface of the projection 232 early on. In addition, since the first side surface 231b1, which is not enlarged in a part of the circumferential direction of the recess 231, is provided, the movement of the substrate W is restricted by the first side surface 231b1 when the substrate W moves in the horizontal direction.

[0046] The circumferential length of each first side surface 231b1 may be shorter than, for example, the circumferential length of each second side surface 231b2. In this case, gas can easily enter the gap between the outer periphery of the substrate W and the side surface 231b towards the projection 232. The circumferential length of the four first side surfaces 231b1 may be, for example, 6 mm.

[0047] The same effect as that of the rotary table 210 is achieved with the rotary table 230 described above.

[0048] Referring to Figure 12, a rotary table 240 according to the fourth example, which can be applied as rotary table 2, will be described. Figure 12 is a plan view showing a part of the rotary table 240 according to the fourth example. In Figure 12, the substrate W is not shown.

[0049] The rotary table 240 differs from the rotary table 210 in that, instead of the ring-shaped projection 212 in a plan view, it has multiple arc-shaped projections 242 in a plan view. The following explanation will focus on the differences from the rotary table 210.

[0050] The rotary table 240 has a plurality of recesses 241 provided along the direction of rotation. Each recess 241 has a bottom surface 241a, a side surface 241b, and a top surface 241c.

[0051] The bottom surface 241a is provided with a projection 242 and a groove 243. The groove 243 may be the same as the groove 213.

[0052] Multiple protrusions 242 are provided along the outer circumference of the substrate W. The multiple protrusions 242 are provided at intervals from each other along the circumferential direction of the recess 241. Each protrusion 242 has, for example, an arc shape in a plan view. The shape of each protrusion 242 is not particularly limited. Each protrusion 242 may have a circular shape in a plan view. Each protrusion 242 may have a rectangular shape in a plan view. Thus, the protrusions 242 may be provided on a part of the circumferential direction of the recess 241.

[0053] The same effect as described above is achieved with the rotary table 240.

[0054] [Examples] In Example 1, a film deposition process was repeatedly performed to deposit a silicon nitride film on a substrate using a film deposition apparatus having a recess 231 as shown in Figures 9 to 11. Furthermore, each time the cumulative thickness of the silicon nitride film reached a predetermined amount, the number of substrates in contact with the side surface 231b of the recess 231 and those not in contact was checked, and the percentage of substrates in contact with the side surface 231b of the recess 231 (hereinafter referred to as the "substrate slip rate") was calculated. Additionally, when the cumulative thickness of the silicon nitride film was 2 μm or more, the number of particles adhering to a predetermined area within the substrate surface was checked, and the percentage of substrates with a particle count exceeding a predetermined amount (hereinafter referred to as the "particle rate") was calculated.

[0055] In Example 2, the substrate slip rate and particle rate were calculated using the same procedure as in Example 1, in a film deposition apparatus having the recess 211 shown in Figures 5 and 6.

[0056] In Comparative Example 1, in a film deposition apparatus having a recess 211 without a protrusion 212 relative to the recess 211 shown in Figures 5 and 6, the substrate slip rate and particle rate were calculated using the same procedure as in Example 1.

[0057] Figure 13 shows the substrate slip occurrence rate. In Figure 13, the horizontal axis represents the cumulative film thickness [μm], and the vertical axis represents the substrate slip occurrence rate [%]. In Figure 13, circles represent the results of Example 1, diamonds represent the results of Example 2, and triangles represent the results of Comparative Example 1.

[0058] As shown in Figure 13, in Example 1, the substrate slip rate decreased to less than 20% when the cumulative film thickness was 1 μm or more, and became 0% when the cumulative film thickness was 3 μm or more. In Example 2, when the cumulative film thickness was 3 μm or less, the substrate slip rate decreased as the cumulative film thickness increased, and when the cumulative film thickness was 3 μm or more, the substrate slip rate stabilized in the range of 0% to 20%. In Comparative Example 1, the substrate slip rate was 100% when the cumulative film thickness was 4 μm or less, and was 0% when the cumulative film thickness was 5 μm.

[0059] The results above demonstrate that, compared to Comparative Example 1, Examples 1 and 2 are more effective in suppressing substrate slippage within the recess when the cumulative film thickness is 4 μm or less. In other words, it was shown that providing protrusions along the outer circumference of the substrate placed in the recess can suppress substrate slippage within the recess when the cumulative film thickness is small.

[0060] The results above show that Example 1 is particularly effective in suppressing substrate slippage within the recess when the cumulative film thickness is 3 μm or less, compared to Example 2. In other words, it was shown that by providing protrusions along the outer circumference of the substrate placed in the recess, and by enlarging the inner diameter of the recess in at least a portion of the circumferential direction, substrate slippage within the recess can be particularly suppressed when the cumulative film thickness is small. This is thought to be because, by enlarging the inner diameter of the recess in at least a portion of the circumferential direction, a silicon nitride film with a coefficient of friction with the substrate greater than that of the material constituting the protrusion can be more easily formed on the surface of the protrusion.

[0061] Figure 14 shows the particle generation rate. In Figure 14, the results for Comparative Example 1, Example 2, and Example 1 are shown from left to right. In Figure 14, the particle generation rates for Example 1, Example 2, and Comparative Example 1 are shown as relative values ​​with the particle generation rate for Comparative Example 1 set to 1.

[0062] As shown in Figure 14, in Example 2, the particle generation rate was reduced by approximately 14% compared to Comparative Example 1. This result indicates that by providing protrusions along the outer circumference of the substrate placed in the recess, the adhesion of particles to a predetermined area within the substrate surface can be suppressed.

[0063] As shown in Figure 14, in Example 1, the particle generation rate was reduced by approximately 40% compared to Comparative Example 1. This result indicates that by providing protrusions along the outer circumference of the substrate placed in the recess, and by enlarging the inner diameter of the recess in at least a portion of the circumferential direction, the adhesion of particles to a predetermined area within the substrate surface can be particularly suppressed.

[0064] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0065] In the above embodiment, the film deposition apparatus was described as an apparatus that processes multiple substrates W placed on a rotary table 2 in a processing container 1 by revolving the rotary table 2 and passing them sequentially through multiple regions. However, the disclosure is not limited to this. For example, the film deposition apparatus may be a single-wafer type apparatus that has a substrate support section with a single recess on its surface for placing a substrate W, and processes one substrate at a time by placing it on the substrate support section. [Explanation of Symbols]

[0066] 1. Processing container 2, 210, 220, 230, 240 Rotating Table 24, 211, 221, 231, 241 recesses Bottom surfaces of 211a, 221a, 231a, and 241a 212, 222, 232, 242 protrusions W substrate

Claims

1. Processing container and A substrate support portion is provided within the processing container and has a circular recess on which the substrate is placed, Equipped with, The recess has a projection provided on the bottom surface, a plurality of first surfaces extending along the circumferential direction, and a plurality of second surfaces extending along the circumferential direction. The projection is provided along the outer circumference of the substrate which is placed in the recess, The plurality of second surfaces are located radially outward from the plurality of first surfaces. The plurality of first surfaces and the plurality of second surfaces are arranged alternately along the circumferential direction. Film deposition equipment.

2. The recess has a groove on its bottom surface, The groove is provided on the outside of the projection, The film deposition apparatus according to claim 1.

3. The height of the projection is lower than the upper surface of the recess. The film deposition apparatus according to claim 1.

4. The projection has a ring shape that extends along the outer circumference of the substrate. The film deposition apparatus according to claim 1.

5. The aforementioned protrusions are provided in multiple locations along the outer circumference of the substrate. The film deposition apparatus according to claim 1.

6. The inner diameter of the recess is larger than the outer diameter of the substrate. The film deposition apparatus according to claim 1.

7. The inner diameter of the recess is enlarged in at least a portion of the circumferential direction. The film deposition apparatus according to claim 1.

8. The recess is inclined such that it widens from the bottom surface toward the upper surface of the recess in at least a portion of the circumferential direction. The film deposition apparatus according to claim 1.

9. The system includes a heating unit for heating the substrate placed in the recess, The film deposition apparatus according to claim 1.

10. The substrate support portion is rotatable, Multiple recesses are provided along the rotational direction of the substrate support portion. A film deposition apparatus according to any one of claims 1 to 9.

Images