Substrate processing equipment

Abstract

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for depositing a thin film on a substrate. The substrate processing apparatus according to an embodiment of the present invention includes: a plurality of source gas supply units for respectively supplying a plurality of source gases, at least one of which includes [3-(dimethylamino)propyl]dimethylindium (DADI); a gas mixer connected to the plurality of source gas supply units and having an internal space for allowing the source gases to pass through at a rate slower than the supply rate at which the source gases are supplied; and a chamber connected to the gas mixer and having a reaction space for supplying the source gases mixed in the internal space.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for depositing a metal oxide thin film on a substrate.

Background Art

[0002] Metal oxide thin films, such as organometallic oxide thin films, have excellent characteristics such as low power and high mobility, and are therefore used as protective layers, transparent conductive layers, or semiconductor layers formed on substrates in semiconductor devices, display devices, solar cells, etc.

[0003] Metal oxide thin films can be formed from zinc (Zn) oxide doped with at least one of indium (In) and gallium (Ga), such as indium zinc oxide (IZO), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), etc. Such metal oxide thin films will have various characteristics depending on the composition ratios of indium (In), gallium (Ga), and zinc (Zn).

[0004] Conventionally, metal oxide thin films were deposited onto substrates using a sputtering deposition method that employed a target composed of indium (In), gallium (Ga), and zinc (Zn) in a fixed composition ratio. However, this sputtering method had the disadvantage that the composition ratio of the metal oxide thin film was fixed to the composition ratio of the target, and any attempt to change the composition ratio of the deposited metal oxide thin film required changing the target itself. Furthermore, while the sputtering method exhibited excellent thin-film properties during the initial sputtering process, as the number of thin-film deposition cycles increased, the target composition would unintentionally change, altering the properties of the deposited metal oxide thin film. As a result, the sputtering process required frequent target changes, leading to decreased productivity and increased costs. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Korean Published Patent No. 10-2009-0117543 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] The present invention provides a substrate processing apparatus capable of depositing a metal oxide thin film onto a substrate using a chemical vapor deposition method.

[0007] Furthermore, the present invention provides a substrate processing apparatus that can easily control the composition ratio of a metal oxide thin film. [Means for solving the problem]

[0008] A substrate processing apparatus according to an embodiment of the present invention comprises: a plurality of raw material gas supply units for supplying a plurality of raw material gases, each containing at least one [3-(dimethylamino)propyl]dimethylindium (DADI); a gas mixing unit to which each of the plurality of raw material gas supply units is connected and which has an internal space having a passage speed slower than the supply speed at which the plurality of raw material gases are supplied; and a chamber connected to the gas mixing unit and having a reaction space to which the raw material gases mixed in the internal space are supplied.

[0009] The plurality of raw material gas supply units comprises a plurality of raw material storage units in which a plurality of raw material substances for generating a plurality of raw material gases are stored in a liquid state, and a plurality of raw material gas pipes that form flow paths connecting the plurality of raw material storage units and the gas mixing unit, wherein the internal space may be formed so that the cross-sectional area intersecting the direction in which the plurality of raw material gases pass is larger than the sum of the cross-sectional areas of the flow paths formed in each of the plurality of raw material gas pipes.

[0010] The substrate processing apparatus further comprises a mixed gas piping that forms a flow path connecting the gas mixing section and the chamber, and the flow path formed in the mixed gas piping may have a cross-sectional area smaller than the cross-sectional area of ​​the internal space that intersects with the direction in which the plurality of raw material gases pass.

[0011] The flow path formed in the mixed gas piping may have a larger cross-sectional area than the sum of the cross-sectional areas of the flow paths formed in each of the plurality of raw gas piping.

[0012] The internal space may be provided to have a volume larger than the maximum volume of the multiple raw material gases that can be supplied per unit time from the multiple raw material gas supply units.

[0013] The plurality of raw material gas supply units may further include a plurality of carrier gas supply units for supplying carrier gas to each of the plurality of raw material storage units, and may further include a control unit for adjusting the amount of carrier gas supplied from each of the plurality of carrier gas supply units.

[0014] The control unit may adjust the supply amount of carrier gas in proportion to the mixing ratio of the raw material gases mixed in the internal space.

[0015] The plurality of raw material storage containers may include a first raw material storage container for storing a raw material containing [3-(dimethylamino)propyl]dimethylindium (DADI), a second raw material storage container for storing a raw material containing either trimethylgallium (TMG) or triethylgallium (TEG), and a third raw material storage container for storing a raw material containing either diethylzinc (DEZ) or dimethylzinc (DMZ).

[0016] The plurality of raw material gas supply units further comprises a plurality of raw material storage heaters for heating each of the plurality of raw material storage units, and the control unit may control the plurality of raw material storage heaters so that the plurality of raw material storage units are kept at different temperatures from each other.

[0017] The substrate processing apparatus further comprises a mixed gas pipe heater for heating the mixed gas pipe, and the control unit may control the mixed gas pipe heater so that the mixed gas pipe is maintained at a temperature of 30 to 150°C. [Effects of the Invention]

[0018] According to the substrate processing apparatus according to an embodiment of the present invention, a plurality of raw material gases for depositing an oxide thin film can be uniformly mixed and applied to the substrate.

[0019] Furthermore, the composition of the oxide thin film deposited on the substrate can be easily changed according to the desired properties. [Brief explanation of the drawing]

[0020] [Figure 1] This figure shows a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2]It is a diagram showing how a source gas moves through a gas mixing section according to an embodiment of the present invention. [Figure 3] It is a diagram showing a view of the gas mixing section according to an embodiment of the present invention from one direction. [Figure 4] It is a diagram showing how plasma is formed in a reaction space according to an embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0021] Hereinafter, embodiments of the present invention will be described in more detail based on the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various different forms. These embodiments are merely provided to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention. In describing the present invention, the same reference numerals are given to the same components, and the drawings may be partially exaggerated in size for the purpose of accurately explaining the embodiments of the present invention. In the drawings, the same reference numerals indicate the same components.

[0022] FIG. 1 is a diagram showing a schematic view of a substrate processing apparatus according to an embodiment of the present invention. Further, FIG. 2 is a diagram showing how a source gas moves through a gas mixing section according to an embodiment of the present invention, and FIG. 3 is a diagram showing a view of the gas mixing section according to an embodiment of the present invention from one direction.

[0023] Referring to FIGS. 1 to 3, a substrate processing apparatus according to an embodiment of the present invention includes a plurality of source gas supply units 100a, 100b, 100c for respectively supplying a plurality of types of source gases including at least one kind of [3-(dimethylamino)propyl]dimethylindium (DADI), and the plurality of source gas supply units 100a, 100b, 100c are respectively connected, and a gas mixing section 200 provided with an internal space I having a passing speed slower than the supply speed at which the plurality of types of source gases are supplied, and a chamber 400 connected to the gas mixing section 200 and having a reaction space to which the source gas mixed in the internal space I is supplied.

[0024] A substrate processing apparatus according to an embodiment of the present invention can perform a thin film deposition process in which a thin film is deposited on a substrate S by supplying a source gas and a reactant gas. Here, the thin film deposition process may be a process in which a metal oxide thin film such as zinc (Zn) oxide doped with at least one of indium (In) and gallium (Ga), for example, indium zinc oxide (IZO), zinc gallium oxide (GZO), or indium gallium zinc oxide (IGZO), is deposited on the substrate S. In the following description, a substrate processing apparatus for depositing an IGZO metal oxide thin film on a substrate S will be used as an example, but it goes without saying that embodiments of the present invention can also be applied to processes for depositing various other metal oxide thin films on a substrate S.

[0025] Multiple raw material gas supply units are provided, and each of the multiple raw material gas supply units 100a, 100b, and 100c supplies multiple raw material gases to the gas mixing unit 200 for depositing a thin film on the substrate S. To deposit an IGZO metal oxide thin film on the substrate S, one of the multiple raw material gas supply units 100a, 100b, and 100c may be a first raw material gas supply unit 100a for supplying a raw material gas containing ([3-(dimethylamino)propyl]dimethylindium) (DADI), as shown in Figure 1. The raw material gas containing DADI is supplied to provide indium (In) gas, and the multiple raw material gas supply units 100a, 100b, and 100c may also include a second raw material gas supply unit 100b for supplying gallium (Ga) gas and a third raw material gas supply unit 100c for supplying zinc (Zn) gas.

[0026] The multiple raw material gas supply units 100a, 100b, and 100c may each include multiple raw material storage units 110a, 110b, and 110c, each storing multiple raw material substances for generating multiple raw material gases, and multiple raw material gas pipes 120a, 120b, and 120c that form flow paths connecting the multiple raw material storage units 110a, 110b, and 110c to the gas mixing unit 200, respectively. When a plurality of raw material gas supply units 100a, 100b, and 100c comprise a first raw material gas supply unit 100a, a second raw material gas supply unit 100b, and a third raw material gas supply unit 100c, the first raw material gas supply unit 100a may comprise a first raw material storage unit 110a and a first raw material gas piping unit 120a, the second raw material gas supply unit 100b may comprise a second raw material storage unit 110b and a second raw material gas piping unit 120b, and the third raw material gas supply unit 100c may comprise a third raw material storage unit 110c and a third raw material gas piping unit 120c.

[0027] Each raw material storage container may be cylindrical in shape and have a storage space inside, in which raw material substances for generating raw material gases are stored. Here, the first raw material storage container 110a may store a first raw material substance for generating indium (In) gas, and the first raw material substance may contain [3-(dimethylamino)propyl]dimethylindium (DADI). The second raw material storage container 110b may store a second raw material substance for generating gallium (Ga) gas, and the second raw material substance may contain either trimethylgallium (TMG) or triethylgallium (TEG). On the other hand, the third raw material storage container 110c may store a third raw material substance for generating zinc (Zn) gas, and the third raw material substance may contain either diethylzinc (DEZ) or dimethylzinc (DMZ). Here, the first raw material, the second raw material, and the third raw material may be stored in liquid form in the first raw material storage container 110a, the second raw material storage container 110b, and the third raw material storage container 110c, respectively.

[0028] Here, the multiple raw material gas supply units may further include multiple raw material storage heaters 140a, 140b, and 140c for heating the multiple raw material storage units 110a, 110b, and 110c, respectively. That is, the first raw material gas supply unit 100a may include a first raw material storage heater 140a for heating the first raw material storage unit 110a, the second raw material gas supply unit 100b may include a second raw material storage heater 140b for heating the second raw material storage unit 110b, and the third raw material gas supply unit 100c may include a third raw material storage heater 140c for heating the third raw material storage unit 110c. The first raw material storage heater 140a, the second raw material storage heater 140b, and the third raw material storage heater 140c can heat the first raw material storage 110a, the second raw material storage 110b, and the third raw material storage 110c, respectively, thereby allowing the first raw material, the second raw material, and the third raw material, which are in a liquid state, to vaporize. Here, the multiple raw material storage heaters 140a, 140b, and 140c may be provided in the form of a heating jacket that surrounds the first raw material storage 110a, the second raw material storage 110b, and the third raw material storage 110c, respectively.

[0029] Furthermore, the multiple raw material gas supply units 100a, 100b, and 100c may each further comprise multiple carrier gas suppliers 130a, 130b, and 130c for supplying carrier gas to the respective multiple raw material storage units. That is, the first raw material gas supply unit 100a may comprise a first carrier gas supplier 130a for supplying carrier gas to the first raw material storage unit 110a, the second raw material gas supply unit 100b may comprise a second carrier gas supplier 130b for supplying carrier gas to the second raw material storage unit 110b, and the third raw material gas supply unit 100c may comprise a third carrier gas supplier 130c for supplying carrier gas to the third raw material storage unit 110c. The first carrier gas supplier 130a, the second carrier gas supplier 130b, and the third carrier gas supplier 130c can supply carrier gas to the first raw material storage unit 110a, the second raw material storage unit 110b, and the third raw material storage unit 110c, respectively. This allows the first raw material gas, the second raw material gas, and the third raw material gas, which are vaporized raw material substances within each raw material storage unit, to be supplied to the gas mixing unit 200. Here, any inert gas can be used as the carrier gas, such as argon (Ar) gas, hydrogen (H2) gas, nitrogen (N2) gas, and helium (He) gas.

[0030] Multiple raw material gas pipes 120a, 120b, and 120c form flow paths connecting multiple raw material storage units 110a, 110b, and 110c to the gas mixing unit 200, respectively. The multiple raw material gas pipes 120a, 120b, and 120c may include a first raw material gas pipe 120a connecting a first raw material storage unit 110a to the gas mixing unit 200, a second raw material gas pipe 120b connecting a second raw material storage unit 110b to the gas mixing unit 200, and a third raw material gas pipe 120c connecting a third raw material storage unit 110c to the gas mixing unit 200. Here, the first raw material gas pipe 120a, the second raw material gas pipe 120b, and the third raw material gas pipe 120c may each have the shape of a pipe that forms a flow path inside. Furthermore, one end of the first raw material gas pipe 120a and the other end may be connected to the first raw material storage 110a and the gas mixing section 200, respectively; one end of the second raw material gas pipe 120b and the other end may be connected to the second raw material storage 110b and the gas mixing section 200, respectively; and one end of the third raw material gas pipe 120c and the other end may be connected to the third raw material storage 110c and the gas mixing section 200, respectively. It goes without saying that, although not shown in the figures, at least one valve may be provided in each raw material gas pipe.

[0031] Multiple raw material gas supply units 100a, 100b, and 100c are connected to the gas mixing unit 200, and an internal space I is provided such that the passage speed is slower than the supply speed at which the multiple types of raw material gases are supplied. Such a gas mixing unit 200 may also include a mixer.

[0032] The gas mixing unit 200 may have a cylindrical shape with an internal space I, and the first raw material gas pipe 120a, the second raw material gas pipe 120b, and the third raw material gas pipe 120c are arranged to communicate with the internal space I. In this case, the first raw material gas, the second raw material gas, and the third raw material gas supplied to the gas mixing unit 200 via the first raw material gas pipe 120a, the second raw material gas pipe 120b, and the third raw material gas pipe 120c, respectively, are mixed as they pass through the internal space I, and the mixed raw material gas is supplied to a chamber 400 connected to the gas mixing unit 200.

[0033] In this case, as shown in Figure 2, if the speed at which the first raw material gas moves toward the gas mixing section 200 within the first raw material gas piping 120a is defined as the first supply speed V1a, the speed at which the second raw material gas moves toward the gas mixing section 200 within the second raw material gas piping 120b is defined as the second supply speed V1b, and the speed at which the third raw material gas moves toward the gas mixing section 200 within the third raw material gas piping 120c is defined as the third supply speed V1c, then the internal space I of the gas mixing section 200 may be formed such that multiple types of raw material gases pass through the internal space I at a passage speed V2 that is slower than the first supply speed V1a, the second supply speed V1b, and the third supply speed V1c. That is, the internal space I of the gas mixing section 200 may be formed in a shape such that multiple types of raw material gases pass through the internal space I at a passage speed V2 that is slower than the slowest supply speed among the first supply speed V1a, the second supply speed V1b, and the third supply speed V1c. In this case, the speed at which the first, second, and third raw material gases move while being supplied to the internal space I is reduced, thereby ensuring sufficient time for the first, second, and third raw material gases to be uniformly mixed within the internal space I before being discharged from the gas mixing unit 200.

[0034] For this reason, the internal space I provided in the gas mixing section 200 may be formed such that the cross-sectional area S2 intersecting the directions through which the multiple types of raw material gases pass is larger than the sum of the cross-sectional areas S1a, S1b, and S1c of the flow paths formed in the multiple raw material gas pipes 120a, 120b, and 120c, respectively, as shown in Figure 3. Here, the cross-sectional area S2 intersecting the directions through which the multiple types of raw material gases pass refers to the cross-sectional area S2 of the internal space I when the internal space I is cut into a plane that intersects with the path through which the first raw material gas passes, the path through which the second raw material gas passes, and the path through which the third raw material gas passes. Thus, the portion in which the cross-sectional area S2 intersecting the directions through which the multiple types of raw material gases pass is larger than the sum of the cross-sectional areas S1a, S1b, and S1c of the flow paths formed in the multiple raw material gas pipes 120a, 120b, and 120c, respectively, may be at least a part of the internal space I.

[0035] Here, if the internal space I is formed such that the cross-sectional area S2 intersecting the directions through which multiple types of raw material gases pass is greater than the sum of the cross-sectional areas S1a, S1b, and S1c of the flow paths formed in each of the multiple raw material gas pipes, then generally, the first raw material gas, the second raw material gas, and the third raw material gas will pass through the internal space I at a passage speed V2 that is slower than the first supply speed V1a, the second supply speed V1b, and the third supply speed V1c, respectively. However, even in this case, if the volume of the internal space I is not formed to be sufficiently large, the passage speed V2 through which the first raw material gas, the second raw material gas, and the third raw material gas pass through the internal space I may not be slower. For this reason, the internal space I may be provided to have a volume larger than the maximum volume of multiple raw material gases that can be supplied per unit time from the multiple raw material gas supply units 100a, 100b, and 100c. In other words, the internal space I provided in the gas mixing section 200 may be provided with a volume greater than the sum of the maximum volume of the first raw material gas that can be supplied per unit time from the first raw material gas supply section 100a, the maximum volume of the second raw material gas that can be supplied per unit time from the second raw material gas supply section 100b, and the maximum volume of the third raw material gas that can be supplied per unit time from the third raw material gas supply section 100c. As a result, the first raw material gas, the second raw material gas, and the third raw material gas supplied to the internal space I will have a passage velocity V2 within the internal space I that is slower than each of their respective supply rates.

[0036] The substrate processing apparatus according to an embodiment of the present invention may further include a mixed gas piping 310 that forms a flow path connecting the gas mixing unit 200 and the chamber 400. As described above, in the internal space I of the gas mixing unit 200, a first raw material gas, a second raw material gas, and a third raw material gas are mixed, and the mixed raw material gases are supplied to the reaction space of the chamber 400, which is located outside the gas mixing unit 200. At this time, the mixed gas piping 310 is provided in the shape of a pipe that forms a flow path inside, and forms a flow path connecting the gas mixing unit 200 and the chamber 400. Here, the number of mixed gas piping 310 may be fewer than the number of raw material gas supply units, and as shown in the figure, it may be provided as a single pipe.

[0037] Here, the flow path formed in the mixed gas piping 310 may have a cross-sectional area S3 smaller than the cross-sectional area S2 of the internal space I that intersects with the direction through which the multiple types of raw material gases pass. Once the first raw material gas, the second raw material gas, and the third raw material gas are sufficiently mixed in the gas mixing section 200, the mixed raw material gases need to be supplied again to the reaction space of the chamber 400 at a speed V3 faster than the passage speed V2. For this reason, the flow path formed in the mixed gas piping 310 is formed to have a cross-sectional area S3 smaller than the cross-sectional area S2 of the internal space I that intersects with the direction through which the multiple types of raw material gases pass.

[0038] Furthermore, the flow path formed in the mixed gas piping 310 may have a cross-sectional area S3 that is larger than the sum of the cross-sectional areas S1a, S1b, and S1c of the flow paths formed in the plurality of raw material gas pipings 120a, 120b, and 120c, respectively. As described above, the first raw material gas, the second raw material gas, and the third raw material gas move through the first raw material gas piping 120a, the second raw material gas piping 120b, and the third raw material gas piping 120c at a first supply speed V1a, a second supply speed V1b, and a third supply speed V1c, respectively. In this case, by making the cross-sectional area S3 of the flow path formed in the mixed gas piping 310 larger than the sum of the cross-sectional areas S1a, S1b, and S1c of the flow paths formed in each of the multiple raw material gas pipings, the movement speeds V1, V2, and V3 of the first raw material gas, second raw material gas, and third raw material gas in the first raw material gas piping section 120a, the second raw material gas piping section 120b, and the third raw material gas piping section 120c are no longer limited by the movement speed V3 of the mixed raw material gas. On the other hand, although not shown in the figures, it goes without saying that at least one valve may also be provided in the mixed gas piping 310.

[0039] The substrate processing apparatus according to an embodiment of the present invention may further include a control unit 900 for controlling a plurality of raw material gas supply units 100a, 100b, and 100c, respectively. Here, the control unit 900 can adjust the supply amount of carrier gas supplied from a plurality of carrier gas suppliers 130a, 130b, and 130c, respectively. When the supply amount of carrier gas supplied to the first raw material storage unit 110a increases, the supply amount of the first raw material gas supplied to the gas mixing unit 200 increases, and when the supply amount of carrier gas supplied to the first raw material storage unit 110a decreases, the supply amount of the first raw material gas supplied to the gas mixing unit 200 decreases. The same applies to the second and third raw material gases. Therefore, the control unit 900 can adjust the supply amounts of the first raw material gas, second raw material gas, and third raw material gas supplied to the gas mixing unit 200 by adjusting the supply amounts of the carrier gas supplied from the first carrier gas supply unit 130a, the second carrier gas supply unit 130b, and the third carrier gas supply unit 130c, respectively. As a result, the raw material gases mixed in the gas mixing unit 200 can be composed of various mixing ratios, and for this reason, it becomes possible to deposit metal oxide thin films with various compositions onto a substrate.

[0040] Furthermore, the control unit 900 can control the multiple raw material storage heaters 140a, 140b, and 140c so that the multiple raw material storage units 110a, 110b, and 110c are kept at different temperatures. As mentioned above, the first raw material may contain a raw material for producing indium (In) gas, the second raw material may contain a raw material for producing gallium (Ga) gas, and the third raw material may contain a raw material for producing zinc (Zn) gas. Thus, the first raw material, the second raw material, and the third raw material are different raw materials and each has a different vapor pressure, so the temperatures required to vaporize each raw material will also be different. Therefore, the control unit 900 can control the multiple raw material storage heaters 140a, 140b, and 140c so that the first raw material storage unit 110a, the second raw material storage unit 110b, and the third raw material storage unit 110c are kept at different temperatures required to vaporize each raw material. Here, the control unit 900 can control a plurality of raw material storage heaters 140a, 140b, and 140c so that the first raw material storage container 110a, the second raw material storage container 110b, and the third raw material storage container 110c are kept at different temperatures within the range of 25 to 150°C.

[0041] On the other hand, although not shown in the diagram, the multiple raw material gas pipes 110a, 110b, 110c, the gas mixing section 200, and the mixed gas pipe 310 can be heated by heaters provided separately from the multiple raw material storage heaters 140a, 140b, 140c. That is, the multiple raw material gas pipes 110a, 110b, 110c are heated by multiple raw material gas pipe heaters (not shown), the gas mixing section 200 is heated by a gas mixer heater (not shown), and the mixed gas pipe 310 is heated by a mixed gas pipe heater 320. This is to prevent particles from being generated from each raw material gas or mixed gas within the multiple raw material gas pipes 110a, 110b, 110c, the gas mixing section 200, and the mixed gas pipe 310. In this manner, when multiple raw material gas pipes 110a, 110b, 110c, the gas mixing unit 200, and the mixed gas pipe 310 are heated, the control unit 900 can control multiple raw material gas pipe heaters (not shown), gas mixer heaters (not shown), and mixed gas pipe heaters 320 so that the multiple raw material gas pipes 110a, 110b, 110c, the gas mixing unit 200, and the mixed gas pipe 310 are kept at a temperature within the range of 30 to 150°C, in order to prevent the generation of particles. This is because if the multiple raw material gas pipes 110a, 110b, 110c, the gas mixing unit 200, and the mixed gas pipe 310 are below 30°C, the undesirable consequence is that particles will be generated inside the pipes, and if they are above 150°C, there is a risk of damage to the pipes or even pipe breakage.

[0042] Chamber 400 is connected to the gas mixing section 200 and has a reaction space into which the raw material gases mixed in the internal space I of the gas mixing section 200 are supplied via the mixed gas piping 310. That is, Chamber 400 provides a predetermined reaction space and maintains it airtight. Chamber 400 may include a body 410 having a predetermined reaction space with a generally circular or square-shaped planar section and side walls extending upward from the planar section, and a lid 420 positioned on top of the body 410 in a generally circular or square shape to maintain the reaction space airtight. However, Chamber 400 is not limited in any way and can be manufactured in various shapes corresponding to the shape of the substrate S.

[0043] Furthermore, the substrate processing apparatus according to the embodiment of the present invention may further include a substrate support section 500 provided in a chamber 400 for supporting a substrate S provided in the chamber 400, a gas blowing section 600 provided in the chamber 400 so as to be opposite to the substrate support section 500 for blowing process gas toward the substrate support section 500, and an RF power supply 700 for supplying power to generate plasma in the chamber 400.

[0044] A substrate S provided in the chamber 400 for the thin-film formation process may be placed on the substrate support section 500. The substrate support section 500 may be equipped with, for example, an electrostatic chuck to attract and hold the substrate S by an electrostatic jack, or it may be equipped with a substrate support stand on which the substrate S can be supported by vacuum attraction or mechanical force.

[0045] The gas blowing section 600 is disposed inside the chamber 400, for example, on the lower surface of the lid 420. Inside the gas blowing section 600, a raw material gas supply path for supplying the mixed raw material gas and a reaction gas supply path for supplying the reaction gas are formed. The mixed gas piping 310 described above is connected to the raw material gas supply path, and a reaction gas piping 800 for supplying a reaction gas containing, for example, oxygen, may be connected to the reaction gas supply path. In this case, the raw material gas supply path and the reaction gas supply path are formed to be independent of and separated from each other, so that the mixed raw material gas and reaction gas can be supplied onto the substrate S separately without mixing with each other.

[0046] The gas blowing section 600 may include an upper frame 610 and a lower frame 620. Here, the upper frame 610 is detachably coupled to the lower surface of the lid 420, and a part of its upper surface, for example, the center of the upper surface, is separated from the lower surface of the lid 420 by a predetermined distance. This allows the raw material gas to diffuse in the space between the upper surface of the upper frame 610 and the lower surface of the lid 420. The lower frame 620 is disposed on the lower surface of the upper frame 610 at a certain distance. This allows the reaction gas to diffuse in the space between the upper surface of the lower frame 620 and the lower surface of the upper frame 610. It goes without saying that the upper frame 610 and the lower frame 620 may be connected along their outer circumferential surfaces to form a single unit with an internal separation space, or the outer circumferential surfaces may be sealed by a separate sealing member.

[0047] The raw material gas supply path may be configured such that the raw material gas supplied from the mixed gas piping 310 is diffused in the space between the lower surface of the lid 420 and the upper frame 610, and then supplied to the inside of the chamber 400 by penetrating the upper frame 610 and the lower frame 620. The reaction gas supply path may also be configured such that the reaction gas supplied from the reaction gas piping 800 is diffused in the space between the lower surface of the upper frame 610 and the upper surface of the lower frame 620, and then supplied to the inside of the chamber 400 by penetrating the lower frame 620. The raw material gas supply path and the reaction gas supply path do not have to be in communication with each other, thereby allowing the raw material gas and reaction gas to be supplied separately to the inside of the chamber 400 from the mixed gas piping 310 and the reaction gas piping 800, respectively, via the gas blowing section 600.

[0048] A first electrode 630 may be disposed on the lower surface of the lower frame 620, and a second electrode 640 may be disposed on the lower side of the lower frame 620 and outside the first electrode 630 at a predetermined distance apart. In this case, the lower frame 620 and the second electrode 640 may be formed connected along their outer surfaces, and the outer surfaces may be sealed by a separate sealing member.

[0049] In this manner, when the first electrode 630 and the second electrode 640 are arranged, the raw material gas may be blown onto the substrate S through the first electrode 630, and the reaction gas may be blown onto the substrate S through the separation space between the first electrode 630 and the second electrode 640.

[0050] RF power from the RF power supply 700 may be applied to either the lower frame 620 or the second electrode 640. Figure 4 shows how plasma is formed in the reaction space according to an embodiment of the present invention, and in Figure 4, a mechanism in which the lower frame 620 is grounded and RF power is applied to the second electrode 640 is shown as an example. When the lower frame 620 is grounded, the first electrode 630 disposed on the lower surface of the lower frame 620 is also grounded. Therefore, when RF power 700 is applied to the second electrode 640, a first activation region, i.e., a first plasma region P1, is formed between the gas blowing section 600 and the substrate support section 500, and a second activation region, i.e., a second plasma region P2, is formed between the first electrode 630 and the second electrode 640.

[0051] As shown in Figure 4, the mixed raw material gas can be supplied into the chamber 400 along the arrows indicated by the solid lines, and the reaction gas can be supplied into the chamber 400 along the arrows indicated by the dotted lines. The mixed raw material gas can be supplied into the chamber 400 by penetrating the inside of the first electrode 630, and the reaction gas can be supplied into the chamber 400 through the separation space between the first electrode 630 and the second electrode 640.

[0052] When the first electrode 630 and the substrate support portion 500 are grounded and power is supplied to the second electrode 640, a first activation region, i.e., a first plasma region P1, is formed between the gas blowing portion 600 and the substrate support portion 500, and a second activation region, i.e., a second plasma region P2, is formed between the first electrode 630 and the second electrode 640.

[0053] Therefore, when the mixed raw material gas is supplied through the first electrode 630, the mixed raw material gas is activated in the first plasma region P1 formed outside the gas blowing section 600. Also, when the reaction gas is supplied through the separation space between the first electrode 630 and the second electrode 640, the reaction gas is activated in the area between the first electrode 630 and the second electrode 640, which corresponds to the inside of the gas blowing section 600, that is, from the second plasma region P2 to the first plasma region P1. Therefore, the substrate processing apparatus according to the embodiment of the present invention can activate the mixed raw material gas and the reaction gas in plasma regions of different sizes. Furthermore, by activating the mixed raw material gas and the reaction gas in plasma regions of different sizes, each gas can be distributed to the optimal supply path for depositing the metal oxide thin film.

[0054] The substrate processing method according to an embodiment of the present invention will be described in more detail below. The substrate processing method according to an embodiment of the present invention is performed using the substrate processing apparatus described above, and therefore, explanations that overlap with the above-mentioned content regarding the substrate processing apparatus will be omitted.

[0055] To deposit a thin film onto the substrate S, first, a low-pressure atmosphere is created in the reaction space of the chamber 400.

[0056] Next, a raw material gas blowing process is performed in which the mixed raw material gas is blown onto the substrate S, and the organic substance precursor contained in the mixed raw material gas is adsorbed onto the substrate S.

[0057] In the raw material gas blowing process, the first raw material, second raw material, and third raw material, which are stored in liquid form in the first raw material storage container 110a, the second raw material storage container 110b, and the third raw material storage container 110c, are heated and vaporized. Then, carrier gas is supplied to the first raw material storage container 110a, the second raw material storage container 110b, and the third raw material storage container 110c, respectively, to supply the first raw material gas, the second raw material gas, and the third raw material gas to the gas mixing unit 200.

[0058] At this time, the first raw material gas, the second raw material gas, and the third raw material gas supplied to the gas mixing unit 200 pass through the internal space I of the gas mixing unit 200 at a speed lower than the supply speed via the raw material gas piping. As a result, the first raw material gas, the second raw material gas, and the third raw material gas can be uniformly mixed within the internal space I of the gas mixing unit 200. The mixed raw material gases are supplied to the gas blowing unit 600 in the chamber 400 via the mixed gas piping 310.

[0059] Next, the mixed raw material gas supplied to the gas blowing section 600 is shut off, and a purge gas is blown onto the substrate S to purge any organic material precursors that remain on the substrate S without being adsorbed.

[0060] Next, the purge gas supplied to the gas blowing section 600 of the chamber 400 is shut off, and a reaction gas is blown onto the substrate S. A reaction gas blowing process is then performed to generate plasma and react the organic substance precursor adsorbed on the substrate S with the reaction gas.

[0061] The reaction gas sprayed onto the substrate S is activated by the plasma, and the activated reaction gas reacts with organic material precursors adsorbed on the substrate, thereby enabling the formation of a two-component or three-component oxide thin film on the substrate.

[0062] Next, the reaction gas supplied to the gas blowing section 600 of the chamber 400 is shut off, and at the same time, a reaction gas purging process is performed in which a purge gas is blown onto the substrate S to purge (or remove) any unreacted gas present in the reaction space of the chamber 400. This process of blowing the mixed raw material gas, purging the raw material gas, blowing the reaction gas, and purging the reaction gas constitutes one cycle, and this cycle consisting of blowing the mixed raw material gas, purging the raw material gas, blowing the reaction gas, and purging the reaction gas is repeated multiple times to deposit an oxide thin film onto the substrate S.

[0063] Thus, according to the embodiments of the present invention, multiple source gases for depositing an oxide thin film can be uniformly mixed and applied to the substrate. Furthermore, the composition of the oxide thin film deposited on the substrate can be easily changed according to desired properties.

[0064] Although preferred embodiments of the present invention have been described and illustrated using specific terminology, these terms are merely for the purpose of clearly explaining the present invention, and it is clear that various modifications and changes can be made to the embodiments and terminology described, without departing from the technical idea and scope of the claims. These modified embodiments should not be understood individually from the idea and scope of the present invention, but should be considered to fall within the scope of the claims of the present invention.

Claims

1. Multiple raw material gas supply units for supplying multiple raw material gases, each containing at least one [3-(dimethylamino)propyl]dimethylindium (DADI), A gas mixing section is provided, to which each of the aforementioned multiple raw material gas supply sections is connected, and which has an internal space such that it has a passage speed slower than the supply speed at which the multiple types of raw material gases are supplied. A chamber connected to the gas mixing section and having a reaction space to which the raw material gas mixed in the internal space is supplied, A gas mixing pipe forming a flow path connecting the gas mixing section and the chamber, A mixed gas pipe heater for heating the aforementioned mixed gas pipe, A control unit for controlling each of the aforementioned multiple raw material gas supply units, Equipped with, The aforementioned multiple raw material gas supply units are Multiple raw material storage containers, each storing multiple raw material substances in a liquid state for generating multiple raw material gases, Multiple raw material storage heaters for heating each of the multiple raw material storage containers, Multiple raw material gas pipes forming flow paths connecting the multiple raw material storage units and the gas mixing unit, Equipped with, The control unit controls the heaters of the multiple raw material storage units so that the multiple raw material storage units are kept at different temperatures from each other, and controls the heater of the mixed gas piping so that the mixed gas piping is kept at a temperature of 30 to 100°C. The aforementioned internal space is formed such that the cross-sectional area intersecting the direction through which the multiple types of raw material gases pass is larger than the sum of the cross-sectional areas of the flow paths formed in each of the multiple raw material gas pipes. The flow path formed in the mixed gas piping is smaller than the cross-sectional area of ​​the internal space that intersects the direction in which the multiple types of raw material gases pass, and has a cross-sectional area larger than the sum of the cross-sectional areas of the flow paths formed in each of the multiple raw material gas piping. Circuit board processing equipment.

2. The internal space is provided to have a volume larger than the maximum volume of the multiple raw material gases that can be supplied per unit time from the multiple raw material gas supply units. The substrate processing apparatus according to claim 1.

3. The plurality of raw material gas supply units further comprises a plurality of carrier gas supply units for supplying carrier gas to each of the plurality of raw material storage units, The control unit adjusts the amount of carrier gas supplied from each of the plurality of carrier gas suppliers. The substrate processing apparatus according to claim 1.

4. The control unit, The amount of carrier gas supplied is adjusted in proportion to the mixing ratio of the raw material gases mixed in the internal space. The substrate processing apparatus according to claim 3.

5. The aforementioned multiple raw material storage devices are, A first raw material storage vessel in which raw material containing [3-(dimethylamino)propyl]dimethylindium (DADI) is stored, A second raw material storage container stores a raw material containing either trimethylgallium (TMG) or triethylgallium (TEG), A third raw material storage container in which a raw material containing either diethylzinc (DEZ) or dimethylzinc (DMZ) is stored, Equipped with, The substrate processing apparatus according to claim 1.

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