Resonance-based light bulb system

Abstract

The additive manufacturing system includes a high-power laser for forming a high-fluence laser beam at a first wavelength, and a 2D-patternable light valve having a resonant-based structure responsive to the write beam.

Description

[Technical Field]

[0001] [Related applications] This disclosure is part of a non-provisional patent application claiming priority to U.S. Patent Application 63 / 107,303, filed on 29 October 2020, which is incorporated in its entirety by reference.

[0002] [Technical field] This disclosure generally relates to operational light bulb systems including a resonance-based control structure. More specifically, to the use of a resonance-based control structure with a low-power writing beam to create transmitted or reflected patterning for a high-fluence beam. [Background technology]

[0003] High-power laser systems with high-fluence, long-duration light are useful for additive manufacturing and other applications that can benefit from the use of patterned, high-energy lasers. [Brief explanation of the drawing]

[0004] Non-limiting and non-exclusive embodiments of this disclosure are described with reference to the following figures, and similar reference numbers refer to similar parts throughout the various figures unless otherwise specified.

[0005] [Figure 1A(i)] This explains the resonant-based light bulb. [Figure 1A(ii)] This explains the resonant-based light bulb. [Figure 1B] This section describes graphs illustrating the reflection or transmission response in a resonance-based light bulb. [Figure 1C(i)] This explains the lambda magic mirror for resonant-based light bulbs. [Figure 1C(ii)] This explains the lambda magic mirror for resonant-based light bulbs. [Figure 1D] This section describes graphs illustrating the reflection or transmission response in a lambda magic mirror-based light bulb. [Figure 1E] Describe a phased array lambda magic mirror control structure. [Figure 1F] Describe an electro-optically activated control structure of a lambda magic mirror. [Figure 1G] Describe an electrically activated control structure of a lambda magic mirror. [Figure 1H] Describe a quantum dot resonance-based light valve. [Figure 1I] Describe a graph depicting the reflection or transmission response in a quantum dot resonance-based light valve. [Figure 1J] Describe a controlled diffraction light valve based on quantum dot resonance. [Figure 1K] Describe a phase change light valve based on quantum dot resonance. [Figure 1L] Describe a light valve based on internal total reflection resonance. [Figure 1M(i)] Describe other embodiments of a light valve based on internal total reflection resonance. [Figure 1M(ii)] Describe other embodiments of a light valve based on internal total reflection resonance. [Figure 1N] Describe a light valve based on metamaterial resonance. [Figure 10] Describe other embodiments of a light valve based on metamaterial resonance. [Figure 2] Describe a block diagram of an additive manufacturing system based on a high fluence light valve supporting a beam dump, a resonance-based light valve, and a heat engine. [Figure 3] Describe an additive manufacturing system based on a high fluence resonance-based light valve. <亮灯 [Figure 4] Describe another embodiment of an additive manufacturing system based on a high fluence resonance-based light valve. [Figure 5] Describe another embodiment of additive manufacturing based on a high fluence resonance-based light valve incorporating a switched approach for waste energy recovery and further use.

Best Mode for Carrying Out the Invention

[0006] In the following description, reference is made to the accompanying drawings, which form a part hereof, and which are shown by way of illustration of specific exemplary embodiments in which the disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the concepts disclosed herein, and it is to be understood that various modifications may be made to the disclosed embodiments without departing from the scope of the disclosure and other embodiments may be utilized. The following detailed description is, therefore, not to be taken in a limiting sense.

[0007] In the following disclosure, an additive manufacturing system includes a high-power laser for forming a high fluence laser beam at a first wavelength. The system includes a 2D patternable light valve having a resonance-based structure responsive to a write beam.

[0008] In some embodiments, the resonance-based structure includes a lambda-damaged mirror.

[0009] In some embodiments, the resonance-based structure includes a phased array lambda-damaged mirror.

[0010] In some embodiments, the resonance-based structure includes a lambda-damaged mirror with an electro-optically activated control structure.

[0011] In some embodiments, the resonance-based structure includes a lambda-damaged mirror with an electrically activated control structure.

[0012] In some embodiments, the resonance-based structure includes a quantum dot material.

[0013] In some embodiments, the resonance-based structure includes an internal total reflection structure.

[0014] In some embodiments, the resonance-based structure includes quantum dot material.

[0015] In some embodiments, the resonance-based structure includes a metamaterial.

[0016] Light bulb (LV) technology is limited in its ability to switch pixel speeds because it relies on photoconductors and liquid crystal materials. Current devices utilize group phenomena (e.g., accumulation of charge across photoconductors or accumulation of polarization delay across liquid crystal cells). By using resonant-based light bulbs structured so that the material couples well with the activation field (writing beam) or high-fluence beam, the physical volume of the activation material can be made relatively small, and its inductance can be made small as well. Furthermore, the activation material can be manufactured in high purity with a much lower probability of defects, significantly reducing damage from defects from high-fluence beams. In addition, additional functions such as scanning that require complex system-level coupling of different LV technologies using standard methods can be replaced by using a single, simple resonant-based LV instead. Additional functions provided by resonant-based LVs include simple amplitude, complex single beam, structured multiple beams, and / or full holographic beam scans.

[0017] Figure 1A(i) illustrates a resonant-based light bulb (RbLV) 100A. A support substrate 3A is mounted on a second support substrate 5A on which a resonator 4A is stationary or forms a cap structure for the resonator 4A. A patterned low-fluence beam 6A of λ1 enters the resonant-based light bulb 100A and interacts with a control structure within the resonator 4A. The resonator is configured to resonate with a high-fluence beam 7A of λ1. More specifically, Figure 1A(ii) shows one or more multilayer stacks (two are shown here: 9A and 11A with one or more control structures 10A placed between the multilayer stack structures). The control structure 10A responds to a write beam 12A of λ1 due to a change in its complex refractive index. This change in rate alters the resonance of the filter (composed of 9A, 10A, and 11A), shifting it from transmission to reflectivity (in the case of a transmission-based RbLV) or from reflectivity to transmission (in the case of a reflection-based RbLV) for high-fluence beams. A high-fluence beam 13A of λ2 enters the RbLV and undergoes multiple reflections within the resonator 4A, constructing a high-fluence response 14A for this structure each time it passes through the resonator, thus yielding a reflection function 15A that depends on the action of the write beam on the control layer.

[0018] The control structure 10A within the resonator can consist of many different materials and their activation based on different phenomena. The phenomena that enable the control structure 10A to change its refractive index may, but are not limited to, thermo-optics (the material heats up in response to the writing beam at λ1 but not at λ2), electro-optics (the material is activated by a field stimulus, and the rate of activation is changed by λ1 but not by λ2), phase change (the material undergoes a phase change from crystalline to amorphous as a function of λ1 only), or polar birefringence (the birefringence of the material is changed by the wavelength of the writing beam and the polarization state at λ1, and does not respond to λ2).

[0019] Figure 1B illustrates graph 100B, which depicts the individual reflection or transmission responses in RbLV. There are two modes for which the resonant structure can be designed: edge response 16B or notch response 17B. The graph can be depicted as either a reflection or transmission response, and here it is shown as a reflection response with a normalized reflection response 18B, shown as a function of the wavelength 19 of the high-fluence beam. The normal reflection response for a notch-type resonator stack is shown as 20B in graph 17B, which is the case without a write beam (the reverse can also be designed). When the write beam is activated, it interacts with the control structure, causing a change in its (control structure's) refractive index, which causes a shift in the resonator response seen in 21B. Similarly, for the edge-band response 16B, the normal response without a write beam is represented by 22B, while the case with a write beam activated is represented by a shift in the resonator response to 23B. The wavelength of the high-fluence beam is represented by 24B, while its response to deactivation and activation of the writing beam is represented by 25B and 26B, respectively. The change in the response of the high-fluence beam as a function of the writing beam is represented by 27B.

[0020] Figures 1C(i) and (ii) illustrate a lambda magic mirror (LMM) for a resonant-based light bulb 100C. In one embodiment shown in Figure 1C(i), a low-fluence writing beam 4C of wavelength λ1 enters the LMM and alters the refractive index of a control structure incorporated into a reflective notch multilayer structure. In the absence of a writing beam, the LMM may be designed so that a high-fluence beam interacts with the resonator to produce a high-reflection response to a high-fluence beam 20C. In the absence of a writing beam, the resonator has a shifted response to a high-fluence beam, which changes the high-reflection function to a high-transmission function, and the LMM becomes transparent to a high-fluence beam 22C. The reverse action can also be designed in the LMM. Figure 1C(ii) shows the resonator layer 7C structure and the patterned writing beam 8C in more detail. The control structure within the resonator layer is composed of a material that readily absorbs at the writing beam wavelength λ1 but hardly absorbs at the high-fluence wavelength λ2. Examples of suitable materials that work with LMM include zinc selenide, zinc sulfide, silicon, and strontium barium niobate.

[0021] Figure 1D illustrates two graphs 100D depicting individual reflection or transmission responses in a lambda magic mirror resonant-based light bulb. An exemplary absorption curve for this material is shown in 9D, where 10D is the percentage absorbed per unit length (typically per micron) as a function of the wavelength 11D (nanometers) of the writing beam. The wavelength of the writing beam is plotted as 12D in the absorption curve 13D of the control structure. The response of a high-fluence beam to the LMM is shown in 14D, along with the responses 15D and 16D when the writing beam is deactivated and activated, respectively. The LMM represents thermo-optical control of the control structure index by the writing beam, and its influence on the index of the control structure causes the resonator to shift its response by directly applying the intensity of the writing beam. In some embodiments, by applying a low level of unpatterned writing beam fluence, the resonance “boils” just below the switching threshold so that a small writing signal activates the wavelength shift, and this feature allows for reduced switching time while preventing pixel spreading.

[0022] Figure 1E illustrates a phased array lambda magic mirror control structure 100E with an LMM structured to be a phased array for non-mechanical beam steering of a high-fluence beam. In the first embodiment 2E, the LMM is used as a phased array for beam steering. In the second embodiment, the LMM includes a phase delay layer 4E. A grayscale patterned writing beam 5E with wavelength λ1 enters the LMM phased array structure and affects the refractive index of the control layer in the resonator. An unpatterned high-fluence, high-coherence beam 6E with wavelength λ2 also enters the LMM and interacts with the resonator controlled by the writing beam. When the writing beam is activated and affects the control structure, the high-fluence beam undergoes a phase delay across the region affected by the LMM and a patterned phase delay across the entire LMM. Coherent phase adjustment provided by the resonator (determined by the grayscale patterning of the write beam) allows the emitting high-fluence beam 7E to steer against the write beam if it does not contain grayscale quality or if the high-fluence beam has high coherence. In regions where the write beam is not activated or the coherence of the high-fluence beam is reduced (upstream control of its coherence), the LMM acts as a reflector for the high-fluence beam, and its energy is reflected to 8E. This depiction of the phased array LMM shows the transmission state when activated, but the reverse can also be designed.

[0023] Embodiment 9E illustrates the phase adjustment details of LMM Embodiment 2E. A typical high-fluence, high-coherence beam 10E reaches the same position as the write beam 11E. Similarly, across the LMM, a pair of transient high-fluence beams and write beams enter the phased array LMM. The write beams are patterned and have grayscale intensity levels, while the high-fluence beams are equally high-coherence and have a null phase relationship with each other. The write beams interact with the control structure, making various changes to the refractive index of the control structure depending on the intensity level of each write beam. The high-fluence beams interact with the resonator, and each beam acquires a certain amount of phase delay or phase advance depending on the intensity of the write beam. Leaving the LMM phased array, the ensemble of high-fluence beams 13E become phase-related with each other. After a propagation amount of 14E (typically 5-10 times the effective aperture of the ensemble), the phased response becomes apparent, and the high-fluence beam reaches a directivity of 15E, which is a phasor addition to the existing ensemble. By changing the spatial and grayscale patterns of the writing beam, the beam can be non-mechanically steered over a range of angles 16E determined by the change in the maximum refractive index of the control medium due to the quality function of the writing beam and the resonator. The high-fluence output from this type of phased array does not include grayscale in its intensity.

[0024] Figure 1F illustrates an electro-optically activated control structure 100F of a lambda magic mirror. The electro-optically activated control structure 100F includes an exemplary TCO3F layer which may be configured to impose electrical (in this case), magnetic, or acoustic activation on the relevant control layer within the resonator. Field enhancement would allow the writing beam to easily manipulate the complex refractive index of the control layer without being affected by the high-fluence beam. In this example, the photoconductor layer 4F responds to a patterned writing beam 7F of λ1. The action of the writing beam on the photoconductor allows the electric field placed on the TCO layer to be transferred across the resonator structure 5F which includes a field-activated (in this case, EO) material. If the writing beam is activated in its pattern, the electric field will be transferred across the resonator and the embedded EO material. The dielectric constant of the EO material changes as a function of the electric field strength, and the refractive index of this layer depends on its instantaneous dielectric constant and therefore on the resonant shift. The resonator is designed to respond to a high-fluence beam 8F of λ2 entering in this embodiment through the support substrate 6F. When the write beam is activated, the EO material alters the resonance of the LMM, shifting its resonance relative to the high-fluence beam. This action allows the high-fluence beam to pattern in the same pattern as the write beam when it interacts with the resonator and departs as a patterned high-fluence beam. When the write beam is not activated, with the write beam off or deactivated, there is a change in the LMM's response so that the unpatterned high-fluence beam departs without being patterned.

[0025] The electric field strengthening layer can be made from crystalline EO materials such as lithium niobate (LiNbO3), potassium dihydrogen phosphate (KDP), or potassium duodenal phosphate (KD*P), titanium rubidium phosphate (RTP), lithium triborate (LiB3O5, or LBO), potassium titanyl phosphate (KTIOPO4 or KTP), lithium tantalite (LiTaO3 or LTO), magneto-optical materials (CdMnTe, CdMnHgTe, TdGdG, or similar materials), acousto-optical materials (LiNbO3, fused silica, PZT, or similar materials), electric field strengthening wavelength converters (from a λ2 high fluence beam to a λ3 high fluence beam), or phase change materials (single crystal or polycrystalline ZnSe, ZnS, Si, polarized liquid crystal or chalcogenide, or similar materials). In other embodiments, the EO material is various types of liquid crystal (LC), such as thermotropic, lyotropic, and metallotropic. In each type of LC, various phases (stable entropy states) may exist, such as nematic, cholesteric, ferroelectric, smetic, blue discotic, and conic. Further embodiments include materials such as aluminum zinc oxide (AZO), cadmium sulfide (CdS), cadmium selenide (CdSe), zinc sulfide (ZnS), zinc selenide (ZnSe), indium sulfide (In2S3), lead sulfide (PbS), cadmium zinc telluride (CdZTe), doped germanium (n:Ge, p:Ge), amorphous silicon (α-Si), doped silicon (n:Si, p:Si), or mercury iodide (HgI2).

[0026] These materials can be in bulk, grown as part of a deposition process, or epitaxially grown on a surface as part of creating a resonator. A common requirement for this application is that the material must be incorporated into the resonator (through growth, deposition, or stacking processes) and respond to a writing beam (λ1) while not being absorbed by high-fluence light (λ2 or λ3).

[0027] Figure 1G illustrates an electrically activated control structure 100G for a lambda magic mirror. An embodiment of the electrically activated control structure 100G for the LMM consists of an electrically controlled layer embedded in a resonator. An upper support substrate 3G and a lower support substrate 6G sandwich a resonator 4G containing an electrically activated control layer 5G. In this embodiment, a patterned writing beam is not required; instead, patterning is performed by appropriately activating an electric matrix embedded in the resonator by an external control circuit 10G. The resonator can be reflective in the off state and transmit in the on state, and vice versa. The electrically activated layer may consist of a phase-change material, a spin-state material, or any electroactive material that causes a change in the material dielectric constant when an electric field is applied. This embodiment requires that the electrical interface does not have absorption in the high-fluence beam wavelength range. Materials possessing this attribute are sized to minimize bonding, as seen in, for example, the exfoliation of nanoscale deposited metals and semiconductor materials (ZnSe, AZO, etc.) and 2D nanosheets of optically mounted semiconductor layers.

[0028] Figure 1H illustrates a quantum dot resonance-based light bulb (QDRLV) 100H. The QDRLV consists of an upper support substrate 3H, a quantum dot (QD) resonance layer 4H, and a lower support substrate 5H. A patterned writing beam 6H enters the QD layer, where it interacts with the QDs to alter the QD resonance response to an unpatterned high-fluence beam 7H. One side of the QD resonates with the writing beam, and the other side resonates with the high-fluence beam. The resonance (different sides) allows a small volume of QD to have a significant impact on the high-fluence beam through this resonance. Where the writing beam is absent or unactivated, the QD resonance response is not shifted, and the high-fluence beam is reflected without patterning 9H. As previously described, the QDRLV is depicted here as reflecting in an off / inactivated writing beam state, but the reverse can be designed as well. Exemplary details of the QD layer are depicted in 10H, and exemplary details of a single QD are described in 12H. The writing beam 11H is incident on the QD layer, and a small portion of it 17H is incident on the QDs. The sum of all the writing beamlets interacts with the cores of all the QDs in the layer, having the desired effect of influencing the resonance of the high-fluence beam (not shown).

[0029] Quantum dots can be sized so that their volume resonates with light. This resonance enhancement can be achieved by coating the QD in a multilayer stack, and in the example shown in 12H where the exemplary QD includes an outer coating layer, this size of the entire QD with these coatings (in this example) is designed to resonate with the high-fluence beam at λ2 only when the λ1 writing beam is activated / present. Other layers can be added to the QD to act as a control layer, as in the case of adding a control layer in 14H, not only to enhance resonance to either or both wavelengths. This layer interacts with the λ1 writing beam, increasing the optically effective size of the QD particle and therefore no longer resonates with the high-fluence beam, and in fact makes the QD transparent to the high-fluence beam when the writing beam is activated or present. Since the core of the QD 16H is sized to resonate with the writing beam, this control layer repeatedly interacts with the writing beam, allowing its small, thin layer to have an extra-large impact on the high-fluence beam. The internal coating layer 15H may be added to assist resonance to the high-fluence beam and to isolate any effects within the core from distorting their desired effect on the high-fluence beam.

[0030] QDs can be constructed from a wide variety of materials, with the requirement that the core must not absorb at a high-fluence beam of wavelength λ2. Depending on whether the core layer or cladding layer, which is a control structure interacting with the writing beam of wavelength λ1, needs to be designed, it may have low or high absorption to the writing beam. In this case, the QD needs to be designed so that its core resonates at λ1, while its overall dimensions resonate at λ2 in one of the writing beam states (activated or deactivated). Grayscale of high-fluence beams is possible by having grayscale in the writing beam.

[0031] Figure 1I illustrates graph 18I, which depicts the reflection or transmission response in a quantum dot resonance-based light bulb 100I. The response function for the QD by a high-fluence beam is shown, 19I is the transmission response of the QD, and 20I is the wavelength range occupied by the high-fluence beam 21I centered at λ2. When the writing beam is deactivated at 22I, the QD interacts with the high-fluence beam, reflecting or scattering the beam. When the writing beam is activated, its repeated interaction with the control layer alters the layer or core of one or more QDs, increasing their optical volume, moving them out of resonance with the high-fluence beam, making the QD invisible to this beam, and enabling its high transmittance 23I. The design in this example is for scattering / reflection due to activation by the writing beam, but the reverse can be designed similarly by appropriately selecting materials and QD sizes.

[0032] Figure 1J illustrates a quantum dot resonance-based controlled diffraction light bulb 100J. The QDR controlled diffraction LV100J has an upper support substrate 3J and a lower support substrate 5J flanking a QD layer 4J constructed on a diffraction grating that diffracts a high-fluence beam 7J of wavelength λ2, which is activated by a writing beam 6J of wavelength λ1. The diffracted high-fluence beam 8J is emitted from the QDR-LV at an angle determined by the optical equivalence ratio of the grating periodic structure and the QD, when activated or deactivated by the writing beam. The emitted high-fluence light passes through a Schlieren optics system 9J, where a slotted reflective screen is used to control the transmission of the gradient light. The Schlieren system is configured so that the gradient light is transmitted to the printed floor at 10J, and the light 13J that passes through without disturbing (deviation from) the diffraction structure is discarded / reflected. The latter would be the case where a high-fluence beam passes through the diffraction layer 12J without disturbance, the writing beam is deactivated so that it is reflected from the Schlieren system, and the high-fluence beam 11J enters the QDR-LV where the QDs do not resonate with the beam. Grayscale can be obtained by a combination of controlling the diffraction angle and the aperture system of the Schlieren system. The lattice structure of the diffraction plane of the QD layer can be constructed using a surface lattice, a volume lattice, or a holographically induced lattice by removing QDs from nanoscopic volume, or by changing the core of each QD if the core is composed of electro-optical or phase-bleachable material.

[0033] Figure 1K illustrates a quantum dot resonance-based phase-change light bulb 100K. A QDR phase-change-based LV100K includes a QDR structure 3K. A patterned writing beam 4K at wavelength λ1 enters the QDR and repeatedly interacts with the core of the QD. The QD resonates at λ1 but not at λ2, and since the QD is much smaller than λ2, the equivalent refractive index of the QD modifies the average refractive index of λ2. An unpatterned high-fluence beam 5K at wavelength λ2 is modified depending on the intensity and duration of the writing beam. If the writing beam has sufficient beam quality to allow a phase change in the core of the QD, the high-fluence beam is modified, and the writing beam image is transferred to the high-fluence beam in the form of a polarization change that allows the high-fluence beam 6K to leave the patterned QDR. If the writing beam does not modify the core of the QD, the high-fluence beam retains its original polarization.

[0034] Details of the QDR phase transition LV are shown at 8K, 11K, and 17K. The QD core is composed of a material that can exist in two states: crystalline / polycrystalline or amorphous. These two states have very different effects on polarization. The crystalline state is birefringent and will alter the polarization of a high-fluence beam, while the amorphous state is not birefringent and does not affect the polarization of a high-fluence beam. The QD shell structure contains a precursor to the crystalline state of the core and is unaffected / not absorbed at the wavelength (λ1) of the writing beam, whereas the core is affected and absorbed at λ1, and the writing beam will pass through the core multiple times, and if the fluence is sufficiently high, the core will undergo a phase transition from crystalline to amorphous. Alternatively, one of the shells surrounding the core may be a control layer, while the core contains a crystalline amorphous material. The shell is heated sufficiently so that the volume outside the core undergoes a phase transition, the center of the core becomes crystalline, and it acts as a seed structure for inversion to the crystalline state.

[0035] A patterned writing beam 9K with intensity I1 enters the QD layer 10K within the QDR, with duration T1 (also known as pulse width), repetition rate K1, and wavelength λ1. The QD 11K within the QDR will respond to the writing beam if the beam has a sufficiently high fluence (= time * intensity). The QD detail at 11K consists of an outer shell 12K, a middle shell 13K, and an inner shell 14K. These shells are used to enhance resonance at λ1 and allow the writing beam to interact with the core 15K and control structures within the QD to enable phase transitions from crystalline to amorphous or amorphous to crystalline. A portion of the writing beam 16K enters the QD and interacts with the core and its cladding shell multiple times (depending on the resonant quality function Q). The writing beam causes a material phase transition of all or part of the core from a crystalline state to an amorphous state 17K and 18K. The high-fluence beam will undergo a polarization change in the region of the QDR where the write beam is not present, and the polarization state of the high-fluence beam will remain unchanged in the region where the write beam is applied. A reset beam (λ1) with a longer pulse width (T2), lower intensity (I2), and variable repetition rate K2 (19K) enters the QD and reacts with the core or control layer, slowly heating the core so that it simply passes through its glass transition temperature. The portion of the central core containing the precursor or preferred crystalline template in the inner shell (14K) serves as a seed structure for the rest of the core. The variable repetition rate is configured to act as a heating and cooling lamp so that the core undergoes a phase transition from amorphous to crystalline, resetting the QD to a crystalline state. The polarization of the high-fluence beam changes from its original polarization state to a polarization state with a polarization shift due to birefringence that occurs when it passes through the QDR to become crystalline again.

[0036] Figure 1L illustrates an internal total internal reflection (TIRrLV) 100L. The resonant base structure 4L is mounted on an internal total internal reflection (TIR) ​​prism 3L. A high-fluence beam 5L at wavelength λ2 enters the prism and is refracted by 6L. The angle of incidence of the high-fluence beam is such that the refracted beam inside the prism undergoes a TIR that depends on the equivalent refractive index of the resonator 4L at wavelength λ2. The resonator resonates with a writing beam 7L at wavelength λ1 and includes a control layer that responds to λ1, so the refractive index of the resonator can be changed to enable or disable the TIR condition at λ2.

[0037] The patterned writing beam 7L enters the resonator 4L, modifying the control structure within the resonator, and the TIR condition is applied to the high-fluence beam 6L, which undergoes TIR at the interface of resonator 4L with the imprinted writing beam pattern 9L, changing its refractive index in the λ2 wavelength band. The patterned high-fluence beam leaves TIRrLV10L and is imaged onto the printed floor. In regions where the writing beam is not activated, the refractive index of the resonator does not support TIR, and the unpatterned high-fluence beam passes through resonator 8L unaffected by the resonator.

[0038] Figures 1M(i) and 1M(ii) illustrate other embodiments of the internal total internal reflection resonance-based light bulb 100M. In one embodiment shown in Figure M(i), a bulk prism 3M is replaced by a prism array with a resonator 4M that is stationary at the TIR interface of the array, or otherwise mounted. A high-fluence beam (5<) of wavelength λ2 enters the series of prism elements and will undergo TIR in the resonator depending on the state of a patterned writing beam 6M of wavelength λ1 that enters the resonator and affects its control layer. If the writing beam does not change the TIR condition (by changing the refractive index of the TIR condition for λ2), the high-fluence beam passes through the TIRrLV 7M unaffected. If the writing beam changes the TIR condition to enable TIR, the high-fluence beam undergoes TIR, is patterned into 8M, and leaves the TIRrLV as a patterned high-fluence beam.

[0039] Another embodiment described in Figure M(ii) shows a TIR prism array having a thin-film TIR reflector 10M with a resonator including a control structure. Both the resonator and the control structure respond to λ1. The resonator and its control structure 11M are mounted or attached to a support substrate 12M. The thin-film TIR film may also be mounted or attached to the resonator to create a monolithic and compact structure. A high-fluence beam 13M enters the thin-film version of the TIRrLV and, depending on the TIR conditions determined by the writing beam 14M, passes through or undergoes TIR in the TiRrLV 15M and leaves the TIRrLV as a patterned high-fluence beam 16M.

[0040] Figure 1N illustrates a metamaterial resonant-based light bulb (MmrLV) 100N, which includes an upper support substrate 3N, a metamaterial resonant layer 4N, and a lower support substrate 5N. A writing beam 6N with wavelength λ1 enters the MmrLV and interacts with a control structure contained within the metamaterial resonant layer. The writing beam alters the complex impedance of the structure of a high-fluence beam 7N with wavelength λ2, which reflects the MmrLV or passes through it with or without (design) influence.

[0041] A metamaterial resonant layer 8N is also described, 9N is a more detailed side view of the metamaterial layer, and 11N is a plan view of an exemplary array of metamaterial resonators. A support substrate 10N on which the resonant structure is constructed is also shown. A unit cell 12N is shown to contain a basic building block or array, which is a combination of a resonator 13N and a control structure 14N. The resonant structure has a complex impedance that resonates at λ2, depending on the operation of the control structure which responds only to λ1. The array frequency (the spacing between unit cells may also resonate at λ2, but the control structure may respond only to λ1, or both) is shown.

[0042] The resonator 13N is one of many different shapes that a resonator can take, and the material used to construct it can also be one of many types. Typical materials for these resonators include semiconductors (some examples being GaAs, AZO, CdS, and doped Si), metal-doped dielectrics (vitreous metals, AZO, silver oxide, copper oxide), or nanoscopic metals encapsulated in a dielectric. Metamaterials are designed so that the electrical and magnetic circuit attributes of relative permittivity, resistivity, and permeability at λ2 can be artificially tuned by the complex impedance of the resonator. Control elements can modify the coupling between any one of these circuit parameters to shift the resonator's response toward or away from λ2. Each resonator cell structure can be constructed to have a small (<10%) λ2, and many cells contribute to the overall macroscopic complex impedance response that a high-fluence beam at λ2 has for a metamaterial resonator array. A key consideration in relation to high-fluence systems is that the imaginary term of the complex impedance (which causes absorption losses) is minimized, thus preventing heating effects. The control mechanism 14N needs to respond only to λ1. In this example, it is configured as a Q (resonance quality coefficient) control by changing the coupling between the basic elements of these resonators, and it can also be configured and formed in a number of different shapes and composed of many different materials, such as ZnSe or α-Si, which would be readily absorbed by UV, but the difference in absorption at 1 μm would be less than six orders of magnitude.

[0043] Figure 10 illustrates another embodiment of a metamaterial resonance-based light bulb (MmrLV) 100O, including an MmrLV used as a solid-state scanner. A solid-state scanner structure 3O, a patterned write beam 4O of λ1, a scanner control beam 5O of ​​λ3 relative to scan angle direction 1, a scanner control beam 6O of λ4 relative to scan angle direction 2, and a high-fluence beam 7O of λ2 are described. The response of the high-fluence beam to the MmrLV would be a patterned high-fluence beam 8O scanned at a 2D angle 9O when activated by the write beam and the two control beams (shown here as a reflective variant, but a transmission version is also available).

[0044] Side view 10O is an example of a metamaterial resonant layer, and 11O is a detailed side view of this layer, which consists of an array 13O of basic resonator cells 12O. The basic metamaterial resonator cell includes a resonator 14O that resonates at λ2, a directional control structure 15O that responds to λ3 or λ4, a directional control structure 16O that responds to λ4 or λ3, and a resonant coupling structure 17O that responds to λ1.

[0045] A wide range of lasers across various wavelengths can be used in combination with the described resonance-based light bulb systems. In some embodiments, possible laser types include, but are not limited to, gas lasers, chemical lasers, dye lasers, metal vapor lasers, solid-state lasers (e.g., fiber), semiconductor (e.g., diode) lasers, free-electron lasers, gas dynamic lasers, "nickel-like" samarium lasers, Raman lasers, or nuclear-pumped lasers.

[0046] Gas lasers may include lasers such as helium-neon lasers, argon lasers, krypton lasers, xenon ion lasers, nitrogen lasers, carbon dioxide lasers, carbon monoxide lasers, or excimer lasers.

[0047] Chemical lasers may include lasers such as hydrogen fluoride lasers, deuterium fluoride lasers, COIL (chemical oxygen-iodine lasers), or Agil (all-gas phase iodine lasers).

[0048] Metal vapor lasers may include lasers such as helium-cadmium (HeCd) metal vapor lasers, helium-mercury (HeHg) metal vapor lasers, helium-selenium (HeSe) metal vapor lasers, helium-silver (HeAg) metal vapor lasers, strontium vapor lasers, neon-copper (NeCu) metal vapor lasers, copper vapor lasers, gold vapor lasers, or manganese (Mn / MnCl2) vapor lasers. Rubidium or other alkali metal vapor lasers may also be used. Solid-state lasers include ruby ​​lasers, Nd:YAG lasers, NdCrYAG lasers, Er:YAG lasers, neodymium YLF (Nd:YLF) solid-state lasers, neodymium-doped yttrium orthovanadate (Nd:YVO4) lasers, and neodymium-doped yttrium calcium oxoborate (Nd:YCa4O(BO3)). 3 Alternatively, simply Nd:YCOB, neodymium glass (Nd:glass) laser, titanium sapphire (Ti:sapphire) laser, thulium YAG (Tm:YAG) laser, ytterbium YAG (Yb:YAG) laser, ytterbium:2O3 (glass or ceramic) laser, ytterbium-doped glass laser (rod, plate / tip, and fiber), holmium YAG (Ho:YAG) laser, chromium ZnSe (Cr:ZnSe) laser, cerium-doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), promethium-147-doped phosphate glass (147Pm +3 This may include lasers such as glass solid-state lasers, chromium-doped chrysoberyl (alexandrite) lasers, erbium-doped anderbium-ytterbium co-doped glass lasers, trivalent uranium-doped calcium fluoride (U:CaF2) solid-state lasers, divalent samarium-doped calcium fluoride (Sm:CaF2) lasers, or F-center lasers.

[0049] Semiconductor lasers may include laser medium types such as GaN, InGaN, AlGaInP, AlGaAs, InGaAsP, GaInP, InGaAs, InGaAsO, GaInAsSb, lead salts, vertical cavity surface-emitting lasers (VCSELs), quantum cascade lasers, hybrid silicon lasers, or combinations thereof.

[0050] Figure 2 illustrates the use of a resonant-based light bulb as disclosed herein in an additive manufacturing system 200. A laser source 202 directs a laser beam to a resonant-based light bulb 206 through a laser preamplifier and / or amplifier 204. After patterning, the light can be directed to a printed floor 210. In some embodiments, heat or laser energy from the laser source 202, laser preamplifier and / or amplifier 204, or resonant-based light bulb 206 can be actively or passively transferred to heat transfer, heat engines, cooling systems, and beam dumps 208. The overall operation of the light bulb-based additive manufacturing system 200 can be controlled by one or more controllers 220 that can change the laser output and timing.

[0051] In some embodiments, various preamplifiers or amplifiers 204 are optionally used to provide high gain to the laser signal, while optical modulators and isolators may be distributed throughout the system to reduce or avoid optical damage, improve signal contrast, and prevent damage to the low-energy portion of the system 200. Optical modulators and isolators may include, but are not limited to, Pockels cells, Faraday rotors, Faraday isolators, acousto-optic reflectors, or volume Bragg gratings. The preamplifier or amplifier 204 may be a diode-pumped amplifier or a flashlamp-pumped amplifier and may be configured in a single-pass and / or multi-pass or cavity-type architecture. To be understood, in the terminology used herein, preamplifier is used to refer to an amplifier that is not thermally limited (i.e., smaller) than the laser amplifier (larger). The amplifier is typically positioned to be the final unit of the laser system 200 and will be the first module susceptible to thermal damage, including, but not limited to, thermal breakdown or excessive thermal lensing effects.

[0052] Laser preamplifiers may include single-pass preamplifiers usable in systems where energy efficiency is not a major concern. For more energy-efficient systems, multi-pass preamplifiers may be configured to extract more energy from each preamplifier 204 before proceeding to the next stage. The number of preamplifiers 204 required for a particular system is defined by the system requirements and the available stored energy / gain at each amplifier module. Multi-pass preamplification can be achieved through angular multiplexing or polarization switching (e.g., using waveplates or Faraday rotators).

[0053] Alternatively, a preamplifier may include a cavity structure having a regenerative amplifier type configuration. While such cavity structures may limit the maximum pulse length due to typical mechanical considerations (cavity length), in some embodiments, a “white cell” cavity may be used. A “white cell” is a multipath cavity architecture in which a small angular deviation is added to each pass. By providing inlet and outlet paths, such a cavity can be designed to have a very large number of passes between the inlet and outlet, enabling high gain and efficient use of the amplifier. An example of a white cell would be a confocal cavity with a tilted mirror, where the beam is emitted slightly off-axis so that the reflection creates a ring pattern on the mirror after passing through it many times. The number of passes can be changed by adjusting the emission angle and the mirror angle.

[0054] The amplifier is also used to provide sufficient stored energy to meet the system's energy requirements, while supporting adequate thermal management to enable operation at the repetition rate required by the system, whether or not it is excited by a diode or flash lamp. Both the thermal and laser energy generated during operation can be directed to heat transfer, heat engines, cooling systems, and beam dump 208.

[0055] Amplifiers can consist of single and / or multipath or cavity-type architectures. Amplifiers may include single-path amplifiers, usable in systems where energy efficiency is less of a concern. For more energy-efficient systems, multipath amplifiers may be configured to extract more energy from each amplifier before proceeding to the next stage. The number of amplifiers required for a particular system is defined by the system requirements and the available stored energy / gain at each amplifier module. Multipath preamplification can be achieved by angular multiplexing, polarization switching (waveplates, Faraday rotors). Alternatively, amplifiers may include cavity structures with regenerative amplifier-type configurations. As discussed with respect to preamplifiers, amplifiers can be used for power amplification.

[0056] In some embodiments, the thermal and laser energy generated during the operation of system 200 may be directed to heat transfer, heat engines, cooling systems, and beam dump 208. Alternatively or additionally, in some embodiments, the beam dump 208 may be part of a heat transfer system to provide heat useful for other industrial processes. In yet another embodiment, heat may be used to power a heat engine suitable for mechanical, thermoelectric, or power generation. In some embodiments, waste heat may be used to raise the temperature of connected components. As understood, laser flux and energy can be scaled in this architecture by adding more preamplifiers and amplifiers with appropriate thermal management and optical separation. The heat removal characteristics of the cooling system can be adjusted, along with the use of increasing pump speed or changing cooling efficiency to tune performance.

[0057] Figure 3 illustrates an additive manufacturing system 300 that may be adapted to a resonant-based light bulb as described herein. As shown in Figure 3, the laser source and amplifier 312 may include a resonant-based light bulb and laser amplifier, as well as other components as described above. As shown in Figure 3, the additive manufacturing system 300 uses a laser capable of providing one-dimensional or two-dimensional directional energy as part of a laser patterning system 310. In some embodiments, one-dimensional patterning may be directed as linear or curved strips, as rasterized lines, as helical lines, or in other suitable forms. Two-dimensional patterning may include isolated or overlapping tiles, or images with variations in laser intensity. Two-dimensional image patterns with non-square boundaries may be used, overlapping or interpenetrating images may be used, and images may be provided by two or more energy patterning systems. The laser patterning system 310 uses the laser source and amplifier 312 to direct one or more continuous or intermittent energy beams to a beam shaping optical system 314. After shaping, the beam is patterned by a laser patterning unit 316, which includes either a transmission or reflection light bulb, as needed, and generally, some of the energy is directed to a waste energy processing unit 318. The waste energy processing unit 318 may utilize the heat provided by the active cooling of the light bulb, as discussed with respect to Figures 1A to 1D.

[0058] The patterned energy is relayed by an image relay 320 toward an article processing unit 340 as a two-dimensional image 322 focused near the floor 346 in one embodiment. The floor 346 (having any walls 348) may form a chamber containing material 344 (e.g., metal powder) to be distributed by a material dispenser 342. The patterned energy directed by the image relay 320 may melt, fuse, sinter, coalesce, alter the crystalline structure, affect the stress pattern, or chemically or physically alter the distributed material 344 to form a structure with desired properties. The control processor 350 may be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers for coordinating the operation of the laser source and amplifier 312, beam shaping optics 314, laser patterning unit 316, and image relay, along with any other components of the system 300. As should be understood, the connection may be wired or wireless, continuous or intermittent, and may include feedback functions (for example, thermal heating may be adjusted according to the sensed temperature).

[0059] In some embodiments, the beam shaping optical system 314 may include a wide variety of imaging optical systems for combining, focusing, diverging, reflecting, refracting, homogenizing, adjusting the intensity, adjusting the frequency, or shaping one or more laser beams received from the laser source and amplifier 312 and directing them toward the laser patterning unit 316. In one embodiment, multiple light beams having different wavelengths may be combined using wavelength-selective mirrors (e.g., dichroic) or diffracting elements. In other embodiments, multiple beams may be homogenized or combined using polyfaceted mirrors, microlenses, and refractive or diffracting optical elements.

[0060] The laser patterning unit 316 may include static or dynamic energy patterning elements. For example, the laser beam may be blocked by a mask with fixed or movable elements. To increase the flexibility and ease of image patterning, pixel-addressable masking, image generation, or transmission may be used. In some embodiments, the laser patterning unit includes an addressable light bulb, either alone or in combination with other patterning mechanisms, to provide patterning. The light bulb may be transmissive, reflective, or use a combination of transmissive and reflective elements. The pattern may be dynamically modified using electrical or optical addressing. In one embodiment, a transmissive optically addressable light bulb acts to rotate the polarization of light passing through the bulb, and the optically addressable pixels form a pattern defined by the light source. In another embodiment, a reflective optically addressable light bulb includes a write beam to change the polarization of the read beam. In some embodiments, a non-optically addressable light bulb may be used. These may include, but are not limited to, electrically addressable pixel elements, movable mirrors or micromirror systems, piezo or micro-operated optical systems, fixed or movable masks or shields, or any other conventional systems capable of providing high-intensity light patterning.

[0061] The waste energy processing unit 318 is used to disperse, redirect, or utilize energy that has passed through the image relay 320 without being patterned. In one embodiment, the waste energy processing unit 318 may include passive or active cooling elements to remove heat from both the laser source, light bulb, and amplifier 312 and the laser patterning unit 316. In other embodiments, the waste energy processing unit may include a “beam dump” to absorb any beam energy not used to define the laser pattern and convert it into heat. In yet another embodiment, the wasted laser beam energy may be reused using the beam shaping optics 314. Alternatively or additionally, the wasted beam energy may be directed to the article processing unit 340 for heating or further patterning. In some embodiments, the wasted beam energy may be directed to an additional energy patterning system or article processing unit.

[0062] In one embodiment, a “switchyard” style optical system may be used. A switchyard system is suitable for reducing wasted light in additive manufacturing systems, such as those caused by the discarding of unwanted light resulting from the pattern being printed. A switchyard involves a complex pattern redirection from its generation (in this case, the plane to which the spatial pattern is applied to a structured or unstructured beam) to its emission through a series of switch points. Each switch point may optionally alter the spatial profile of the incident beam. A switchyard optical system may, but is not limited to, applications in laser-based additive manufacturing techniques where a mask is applied to light. Advantageously, in various embodiments according to this disclosure, the wasted energy can be recycled in a homogenized form or as patterned light used to maintain high power efficiency or high throughput rates. Furthermore, the wasted energy can be recycled and reused to increase intensity for printing more difficult materials.

[0063] The image relay 320 may receive a patterned image (either one-dimensional or two-dimensional) directly from the laser patterning unit 316 or through the switchyard, and guide it toward the article processing unit 340. In a similar manner to the beam shaping optics 314, the image relay 320 may include optics for coupling, focusing, diverging, reflecting, refraction, adjusting intensity, adjusting frequency, or shaping and guiding the patterned light. The patterned light may be directed using movable mirrors, prisms, diffractive optics, or solid-state optics systems that do not require substantial physical movement. One of a plurality of lens assemblies may be configured to provide incident light with magnification using both a first set of optical lenses and a second set of optical lenses, the second set of optical lenses being interchangeable from the lens assembly. Rotation of one or more sets of mirrors mounted on the compensating gantry and the final mirror mounted on the build platform gantry may be used to direct the incident light from the precursor mirror to a desired location. The translational motion of the compensating gantry and build platform gantry also ensures that the distance of incident light from the precursor mirror of the material processing unit 340 is substantially equal to the image distance. In fact, this allows for rapid changes in the delivery size and intensity of the light beam across different material build areas while ensuring high system availability.

[0064] The article processing unit 340 may include a chamber 348 with walls and a floor 344 (collectively defining a build chamber), and a material dispenser 342 for dispensing materials. The material dispenser 342 can dispense, remove, mix, provide a gradual change or variation in the type or particle size of the material, or adjust the thickness of the layer of the material. The materials can include metals, ceramics, glass, polymer powders, other fusible materials capable of undergoing a thermally induced phase change from solid to liquid and the reverse phase change, or combinations thereof. The materials can further include a composite of a fusible material and a non-fusible material, and either or both components can be selectively targeted by an image relay system to melt the fusible component while the non-fusible material separates along it or undergoes a vaporization / destruction / combustion or other destructive process. In some embodiments, slurries, sprays, coatings, wires, strips, or sheets of materials can be used. Unwanted materials can be removed for disposal or recycling by the use of a blower, a vacuum system, a sweep, vibration, shaking, tilting, or inversion of the floor 346.

[0065] In addition to the material processing components, the article processing unit 340 includes components for holding and supporting a 3D structure, a mechanism for heating or cooling the chamber, auxiliary or support optics, and sensors and control mechanisms for monitoring or adjusting the material or environmental conditions. The article processing unit can support a vacuum or an inert gas atmosphere to reduce unwanted chemical interactions and (especially in the case of reactive metals) mitigate the risk of fire or explosion, either wholly or in part. In some embodiments, Ar, He, Ne, Kr, Xe, CO2, N2, O2, SF6, CH4, CO, N2O, C2H2, C2H4, C2H6, C3H6, C3H8, i-C4H 10 、C4H 10 、1-C4H8、cic-2,C4H7、1,3-C4H6、1,2-C​​​​​​​​​C8H 18 , C 10 H 22 , C 11 H 24 , C 12 H 26 , C 13 H 28 , C 14 H 30 , C 15 H 32 , C 16 H 34 , C6H6, C6H5-CH3, C8H 10 Various pure or mixed atmospheres, including C2H5OH, CH3OH, and iC4H8, may be used. In some embodiments, refrigerants or large inert molecules (including, but not limited to, sulfur hexafluoride) may be used. A sealing atmosphere composition having at least about 1% He by volume (or number density) may be used with a selected proportion of inert / nonreactive gases.

[0066] In some embodiments, multiple article processing units or build chambers, each having a build platform for holding a powder bed, may be used in combination with multiple optical mechanical assemblies positioned to receive and direct one or more incident energy beams into the build chambers. Multiple chambers allow for the simultaneous printing of one or more print jobs within one or more build chambers. In other embodiments, removable chamber sidewalls may simplify the removal of prints from the build chambers and enable rapid replacement of powder materials. The chambers may also be equipped with adjustable process temperature control. In yet another embodiment, the build chamber may be configured as a removable printer cartridge that can be positioned near the laser optics. In some embodiments, the removable printer cartridge may contain powder or support a removable connection to a powder supply source. After the production of the item, the removable printer cartridge may be removed and replaced with a new printer cartridge.

[0067] In another embodiment, one or more article processing units or build chambers may have build chambers maintained at a fixed height, while the optics are vertically movable. By keeping the build platform at a fixed height and moving the final optics upward by a distance equivalent to the thickness of the powder layer, the distance between the final optics of the lens assembly and the top surface of the powder bed can be controlled to be essentially constant. Advantageously, compared to moving the build platform vertically, it is not necessary to precisely move the constantly changing mass of the build platform to the micron level, making it easier to manufacture large and heavy objects. Typically, build chambers for metal powders with a volume exceeding 0.1–0.2 cubic meters (i.e., exceeding 100–200 liters or 500–1,000 kg) will benefit most from keeping the build platform at a fixed height.

[0068] In one embodiment, a portion of the powder bed layer may be selectively melted or fused to form one or more temporary walls from a fused portion of the powder bed layer, including another portion of the powder bed layer of the build platform. In a selected embodiment, fluid passages may be formed in one or more first walls to allow for improved thermal management.

[0069] In some embodiments, the additive manufacturing system may include an article processing unit or build chamber with a build platform supporting a powder bed that can be tilted, inverted, and oscillated to substantially separate the powder bed from the build platform in a hopper. The powder material forming the powder bed may be collected in a hopper for reuse in a later printing job. The powder collection process may be automated, and a vacuum or gas jet system may also be used to assist in the removal and disposal of the powder.

[0070] In some embodiments, the additive manufacturing system may be configured to easily handle parts longer than the available build chamber. A continuous (long) section may be advanced sequentially longitudinally from a first zone to a second zone. In the first zone, selected granules of granular material may be combined. In the second zone, uncombined granules of the granular material may be removed. The first part of the continuous section may be advanced from the second zone to a third zone, but the last part of the continuous section is formed within the first zone, and the first part is maintained in the same longitudinal and transverse position within the first and second zones. In practice, additive manufacturing and cleanup (e.g., separation and / or reuse of unused or uncombined granular material) may be carried out in parallel (i.e., simultaneously) at different locations or zones on the part conveyor without needing to stop for the removal of granular material and / or parts.

[0071] In another embodiment, additive manufacturing capabilities can be improved by using a housing that restricts the exchange of gaseous substances between the inside and outside of the housing. The airlock provides an interface between the inside and outside, and the inside has multiple additive manufacturing chambers, including one that supports powder bed melting. A gas management system maintains the gaseous oxygen inside below the critical oxygen concentration, increasing the flexibility of the types of powders that can be used in the system and the processing capabilities.

[0072] In another manufacturing embodiment, performance can be improved by housing an article processing unit or build chamber within the enclosure, and the build chamber can produce parts weighing 2,000 kilograms or more. A gas management system can maintain the gaseous oxygen within the enclosure at a concentration below ambient level. In some embodiments, the airlock operates to buffer between the gas environment inside the enclosure and the gas environment outside the enclosure, so that a wheeled vehicle can transport parts from inside the enclosure and to locations outside both the enclosure and the airlock through the airlock.

[0073] Other manufacturing embodiments include collecting powder samples from the powder bed in real time. The ingestor system is used for in-process collection and characterization of powder samples. Collection may be performed periodically, and the results of characterization lead to adjustments to the powder bed fusion process. The ingestor system may optionally be used for one or more actions such as auditing, process adjustment, or changing printer parameters or verifying the proper use of approved powder materials.

[0074] Further improvements to the additive manufacturing process may be provided by the use of manipulator devices such as cranes, lift gantry, robotic arms, or similar devices that enable the manipulation of parts that would be difficult or impossible for humans to perform the described movements. Manipulator devices may grasp various permanent or temporary additive manufacturing operation points on a part to enable the repositioning or manipulation of the part.

[0075] The control processor 350 may be connected to control any component of the additive manufacturing system 300 described herein, including lasers, laser amplifiers, optics, thermal control, build chambers, and manipulator devices. The control processor 350 may be connected to various sensors, actuators, heating or cooling systems, monitors, and controllers to coordinate their operation. A wide range of sensors, including imagers, light intensity monitors, and thermal, pressure, or gas sensors, may be used to provide information used for control or monitoring. The control processor may be a single central control unit or may comprise one or more independent control systems. The control processor 350 is provided with interfaces for enabling the input of manufacturing instructions. The use of a wide range of sensors enables various feedback control mechanisms to improve quality, manufacturing throughput, and energy efficiency.

[0076] Figure 4 illustrates one embodiment of the operation of a manufacturing system supporting the use of a resonance-based light bulb suitable for additive or subtractive manufacturing. In this embodiment, flowchart 400 illustrates one embodiment of a manufacturing process supported by the optical and mechanical components described. In step 402, the material is placed on a floor, chamber, or other suitable support. The material may be a metal sheet for laser cutting using subtractive manufacturing techniques, or a powder that can be melted, fused, or sintered for chemical or physical modification by additive manufacturing techniques to change the crystalline structure, influence the stress pattern, or form a structure with desired properties.

[0077] In step 404, the unpatterned laser energy is emitted by one or more energy emitters, including but not limited to solid-state lasers or semiconductor lasers, and then amplified by one or more laser amplifiers. In step 406, the unpatterned laser energy is shaped and modified (e.g., its intensity is modulated or focused). In step 408, this unpatterned laser energy is patterned by a resonant-based light bulb with energy that does not form part of the pattern processed in step 410 (this may include the use of a beam dump, as disclosed with respect to Figures 2 and 3, which provides a conversion to waste heat that is recycled as patterned or unpatterned energy, or to waste heat generated by cooling the laser amplifiers in step 404). In step 412, the patterned energy now forming a one-dimensional or two-dimensional image is relayed toward the material. In step 414, the image is applied to the material by either subtracting or additively constructing a portion of the 3D structure. In additive manufacturing, these steps may be repeated until an image (or another subsequent image) is applied to all necessary areas of the top layer of the material (loop 416). Once the application of energy to the top layer of material is complete, a new layer may be applied to continue building the 3D structure (loop 418). These process loops continue until the 3D structure is complete, provided that any remaining excess material can be removed or recycled.

[0078] Figure 5 shows one embodiment of an additive manufacturing system including a resonant-based light bulb and a switchyard system that enables the reuse of patterned two-dimensional energy. The additive manufacturing system 520 has an energy patterning system with a laser and amplifier source 512 that directs one or more continuous or intermittent laser beams to a beam shaping optical system 514. Excess heat may be transferred to a waste energy handling unit 522, which includes an active light bulb cooling system as disclosed with respect to Figures 1A–1D, 2, 3, and 4. After shaping, the beam is patterned two-dimensionally by a resonant-based material-based energy patterning unit 530, and generally, some of the energy is directed to the waste energy handling unit 522. The patterned energy is relayed by one of a plurality of image relays 532 to one or more item processing units 534A, 534B, 534C, or 534D as a two-dimensional image typically focused near a floor at a movable or fixed height. The floor may be inside a cartridge containing a powder hopper or similar material dispenser. The patterned laser beam guided by the image relay 532 can melt, fuse, sinter, coalesce, alter the crystal structure, affect the stress pattern, or chemically or physically modify the distributed material to form a structure with desired properties.

[0079] In this embodiment, the waste energy processing unit has several components that enable the reuse of the waste patterned energy. Cooling fluid from the laser amplifier and source 512 can be directed to one or more of the generator 524, the heating / cooling thermal management system 525, or the energy dump 526. Relays 528A, 528B, and 528C can also transfer energy to the generator 524, the heating / cooling thermal management system 525, or the energy dump 526, respectively. Optionally, relay 528C can direct the patterned energy to image relay 532 for further processing. In other embodiments, the patterned energy can be directed by relay 528C to relays 528B and 528A for insertion into the laser beam provided by the laser and amplifier source 512. Reuse of the patterned image is also possible using image relay 532. Images can be redirected, inverted, mirrored, sub-patterned, or otherwise transformed for distribution to one or more item processing units 534A-D. Advantageously, the reuse of patterned light can improve the energy efficiency of additive manufacturing processes, improve the energy intensity directed to the floor in some cases, or shorten manufacturing time.

[0080] Many modifications and other embodiments of the invention will come to mind to those skilled in the art who benefit from the teachings presented in the foregoing description and the accompanying drawings. Therefore, it is understood that the invention should not be limited to the specific embodiments disclosed, and that modifications and embodiments are intended to be included within the scope of the appended claims. It is also understood that other embodiments of the invention may be carried out without elements / steps not specifically disclosed herein.

Claims

1. A laser comprising a laser source and one or more amplifiers, for forming a laser beam at a first wavelength, A 2D patternable light bulb having a resonant-based structure configured to change transmittance in response to a writing beam, and Includes, Additive manufacturing system wherein the 2D patternable light bulb is configured to receive the laser beam and transmit the laser beam through the 2D patternable light bulb according to the pattern of the writing beam irradiated onto the 2D patternable light bulb.

2. The additive manufacturing system according to claim 1, wherein the resonance-based structure includes a lambda magic mirror.

3. The additive manufacturing system according to claim 1, wherein the resonance-based structure includes a phased array lambda magic mirror.

4. The additive manufacturing system according to claim 1, wherein the resonance-based structure includes a lambda magic mirror equipped with an electro-optically activated control structure, the electro-optically activated control structure includes a material, the material being configured to change its refractive index in response to the writing beam.

5. The additive manufacturing system according to claim 1, wherein the resonance-based structure includes a quantum dot material.

6. The additive manufacturing system according to claim 1, wherein the resonant base structure includes an internal total reflection structure.

7. The additive manufacturing system according to claim 1, wherein the resonance-based structure includes a quantum dot material.

8. The additive manufacturing system according to claim 1, wherein the resonant-based structure includes a metamaterial, the metamaterial including an array of resonators capable of tuning the magnetic circuit attributes of relative permittivity, resistivity, and permeability in response to the writing beam.

9. The additive manufacturing system according to claim 1, wherein the 2D patternable light bulb having the resonance-based structure operates using internal total internal reflection.

10. A laser comprising a laser source and one or more amplifiers, for forming a laser beam at a first wavelength. A writing beam having a second wavelength different from the first wavelength is irradiated onto a light bulb capable of 2D patterning. The laser beam is irradiated onto the 2D patternable light bulb, and the 2D patternable light bulb transmits the laser beam through the 2D patternable light bulb according to the pattern of the writing beam. Includes, Additive manufacturing method for the 2D patternable light bulb having a resonance-based structure configured to change transmittance in response to the writing beam.

11. The additive manufacturing method according to claim 10, wherein the resonant base structure includes a lambda magic mirror.

12. The additive manufacturing method according to claim 10, wherein the resonance-based structure includes a phased array lambda magic mirror.

13. Additive manufacturing method according to claim 10, wherein the resonance-based structure includes a lambda magic mirror having an electro-optically activated control structure, the electro-optically activated control structure includes a material, the material is configured to change its refractive index in response to the writing beam.

14. The additive manufacturing method according to claim 10, wherein the resonance-based structure includes a quantum dot material.

15. The additive manufacturing method according to claim 10, wherein the resonant base structure includes an internal total reflection structure.

16. The additive manufacturing method according to claim 10, wherein the resonance-based structure includes a quantum dot material.

17. Additive manufacturing method according to claim 10, wherein the resonant base structure includes a metamaterial, the metamaterial including an array of resonators capable of tuning the magnetic circuit attributes of relative permittivity, resistivity, and permeability in response to the writing beam.

18. The additive manufacturing method according to claim 10, wherein the 2D patternable light bulb has the resonance-based structure that operates using internal total internal reflection.

Images