Method for manufacturing semiconductor devices

Abstract

To increase the yield of a manufacturing step for a semiconductor device, and increase the mass-productivity of the semiconductor device.SOLUTION: A semiconductor device is manufactured by performing steps of: forming a first material layer 20 on a substrate; forming a second material layer 23 on the first material layer; and separating the first material layer and the second material layer. In addition, it is preferable to heat with the first material layer and the second material layer stacked before the separation. The first material layer includes gas (for example, water) containing one or both of hydrogen and oxygen. The first material layer includes metal oxide, for example. The second material layer includes resin. The first material layer and the second material layer are separated by cutting of the hydrogen bond. By the heating, moreover, water is precipitated at or near the interface between the first material layer and the second material layer. The first material layer and the second material layer are separated because the adhesion decreases due to the water existing at or near the interface.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a peeling method, a method for manufacturing a semiconductor device, and a method for manufacturing a display device. 。

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), their driving methods, or their manufacturing methods.

[0003] In this specification, etc., the semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics. Transistors, semiconductor circuits, display devices, light-emitting devices, input devices, input / output devices , arithmetic units, memory devices, etc. are one aspect of semiconductor devices. In addition, imaging devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices may have semiconductor devices.

Background Art

[0004] Display devices to which organic EL (Electro Luminescence) elements or liquid crystal elements are applied are known. In addition, light-emitting devices including light-emitting elements such as light-emitting diodes (LED: Light Emitt ing Diode), and electronic papers that perform display by an electrophoretic method, etc. can also be cited as an example of a display device. The basic configuration of an organic EL element is one in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes.

[0005] By applying a voltage to this element, light emission can be obtained from the light-emitting organic compound. ​​​ This is possible. Display devices to which such organic EL elements are applied are thin, lightweight, and have high control. This enables the creation of a display device that is both time-efficient and power-efficient.

[0006] Furthermore, semiconductor elements such as transistors and organic E are placed on a flexible substrate (film). By forming display elements such as L elements, a flexible display device can be realized.

[0007] Patent Document 1 describes a support substrate (garage) in which a heat-resistant resin layer and an electronic element are provided via a sacrificial layer. By irradiating the substrate with laser light, the heat-resistant resin layer is peeled off from the glass substrate, allowing for flexible operation. A method for fabricating a usable display device is disclosed. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Publication No. 2015-223823 [Overview of the project] [Problems that the invention aims to solve]

[0009] One aspect of the present invention relates to a novel peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device. One of the objectives of the present invention is to provide a low-cost and highly mass-producible peeling method. One of the objectives is to provide a law, a method for manufacturing a semiconductor device, or a method for manufacturing a display device. One aspect of the present invention aims to provide a peeling method with a high yield. One aspect of the invention addresses the issue of fabricating a semiconductor device or display device using a large-format substrate. One aspect of the present invention addresses the problem of manufacturing a semiconductor device or display device at a low temperature. Let's make it one.

[0010] One aspect of the present invention aims to provide a display device with low power consumption. One aspect of the present invention aims to provide a highly reliable display device. One of the challenges is to make the display device thinner or lighter. One aspect of the present invention is a flexible device One objective is to provide a display device that does or has a curved surface. One aspect of the present invention One of the objectives of this invention is to provide a display device that is less prone to damage. One aspect of the present invention is novel One of the objectives is to provide a display device, input / output device, or electronic device.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention is It is not necessarily required to resolve all of these issues. Specifications, drawings, invoices. It is possible to extract other issues from the descriptions in the sections. [Means for solving the problem]

[0012] One aspect of the present invention is a step of forming a first material layer on a substrate, and a step of forming a second material on the first material layer A semiconductor having a step of forming a layer and a step of separating a first material layer and a second material layer. This is a method for manufacturing a device. The first material layer is a gas containing either hydrogen or oxygen, or both. It has. As the gas, water is preferred, for example. The second material layer has a resin. The first material layer and the second material layer separate due to the breaking of hydrogen bonds. For example, a hydrogen bond can be found between the gas contained in the first material layer and the second material layer. The first material layer is formed such that its adhesion to the second material layer is lower than that of the substrate. It is preferable.

[0013] Alternatively, one aspect of the present invention is a step of forming a first material layer on a substrate, and a step of forming a first material layer on the first material layer. The process of forming the second material layer involves heating the first material layer and the second material layer in a stacked state. A semiconductor device comprising the steps of: a process of preparing a first material layer and a process of separating a second material layer. This is the manufacturing method. The first material layer contains a gas that includes either hydrogen or oxygen, or both. As the gas, water is preferred, for example. The second material layer has a resin. Heating process Then, water precipitates at or near the interface between the first material layer and the second material layer. The adhesion between the layer and the second material layer is reduced due to water present at or near the interface. This separates them.

[0014] The first material layer consists of titanium, molybdenum, aluminum, tungsten, silicon, and indigo. Formed to have one or more of um, zinc, gallium, tantalum, and tin. It is preferable that the first material layer has one or both of titanium and titanium oxide. It is preferable that it be formed in such a way. The first material layer is a laminated structure of titanium and titanium oxide. It is preferable that it be formed to have

[0015] The second material layer is formed to have a region with a thickness of 0.1 μm or more and 5 μm or less. It is preferable.

[0016] The second material layer is formed to have residues of the compound represented by structural formula (100). This is preferable.

[0017] [ka]

[0018] The process of separating the first material layer and the second material layer is carried out while supplying liquid to the separation interface. This is preferable. The liquid preferably contains water.

[0019] In the process of forming the first material layer, a metal layer is formed on the substrate, and plasma treatment is performed on the surface of the metal layer. A metal oxide layer may be formed by performing a process. In plasma treatment, oxygen or water vapor It is preferable to expose the surface of the metal layer to an atmosphere containing one or both of (H2O).

[0020] One aspect of the present invention involves forming a metal oxide layer on a substrate, and then applying a resin or resin to the metal oxide layer. A first layer is formed using a material containing a lipid precursor, and the first layer is subjected to heat treatment. This is a method for manufacturing a semiconductor device, which involves forming a resin layer and separating the metal oxide layer from the resin layer. .

[0021] A metal layer is formed on a substrate, and the surface of the metal layer is subjected to plasma treatment to create a metal oxide layer. They may be formed. In plasma processing, one or both of oxygen and water vapor (H2O) may be used. It is preferable to expose the surface of the metal layer to an atmosphere containing [the specified substance].

[0022] Alternatively, the first layer may be formed after plasma treatment of the metal oxide layer. Plasma processing uses an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O). It is preferable to expose the surface of the metal oxide layer to the ambient air.

[0023] Alternatively, by forming a metal layer on a substrate and heating the metal layer in an oxygen-containing atmosphere, A metal oxide layer may be formed.

[0024] Alternatively, the metal oxide layer may be heated in an oxygen-containing atmosphere before forming the first layer. stomach.

[0025] The heat treatment of the first layer may be carried out in an air atmosphere. Alternatively, the heat treatment may be carried out in an air atmosphere. This may be done while flowing an oxygen-containing gas through the system.

[0026] It is preferable to separate the metal oxide layer and the resin layer while supplying a water-containing liquid to the separation interface. The contact angle between the metal oxide layer and the liquid should preferably be greater than 0° and 60° or less. It seems so.

[0027] The resin layer is preferably formed to have a region with a thickness of 0.1 μm or more and 5 μm or less. It's nice. [Effects of the Invention]

[0028] According to one aspect of the present invention, a novel peeling method, a method for manufacturing a semiconductor device, or a method for manufacturing a display device is provided. A method can be provided. According to one aspect of the present invention, a low-cost and highly mass-producible peeling method is available. The present invention can provide a method for manufacturing a semiconductor device or a display device. According to one aspect of the present invention, a peeling method with a high yield can be provided. A semiconductor device or display device can be manufactured using a large-format substrate. One aspect of the present invention This allows semiconductor devices or display devices to be manufactured at low temperatures.

[0029] According to one aspect of the present invention, a display device with low power consumption can be provided. Depending on the method, a highly reliable display device can be provided. According to one aspect of the present invention, This makes it possible to make the device thinner or lighter. According to one aspect of the present invention, the device is flexible, This can provide a display device having a curved surface. According to one aspect of the present invention, a device that is less prone to damage is available. A display device can be provided. According to one aspect of the present invention, a novel display device and input / output device can be provided. They can provide electronic devices, etc.

[0030] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention is It is not necessarily required to have all of these effects. It is possible to extract effects other than those listed above. [Brief explanation of the drawing]

[0031] [Figure 1] A schematic diagram showing an example of a peeling method. [Figure 2] A schematic diagram showing an example of a peeling method. [Figure 3] A schematic diagram showing an example of the interface between a metal oxide layer and a resin layer. [Figure 4] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 5] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 6] A cross-sectional view and a top view illustrating an example of a method for manufacturing a display device. [Figure 7] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 8] A top view and a cross-sectional view showing an example of a display device. [Figure 9] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 10] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 11] A cross-sectional view and a top view illustrating an example of a method for manufacturing a display device. [Figure 12] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 13] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 14] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 15] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 16] A cross-sectional view and a top view illustrating an example of a method for manufacturing a display device. [Figure 17] A top view and a cross-sectional view showing an example of a display device. [Figure 18] A diagram showing an example of a laminate fabrication apparatus. [Figure 19] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 20] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 21] A cross-sectional view and a top view illustrating an example of a method for manufacturing a display device. [Figure 22] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 23] A top view and a cross-sectional view showing an example of a display device. [Figure 24] A perspective view showing an example of a display device. [Figure 25] A cross-sectional view showing an example of a display device. [Figure 26] A flowchart illustrating an example of a method for manufacturing a display device. [Figure 27] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 28] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 29] A cross-sectional view showing an example of an input / output device. [Figure 30] A flowchart illustrating an example of a method for manufacturing a display device. [Figure 31] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 32] A cross-sectional view showing an example of a method for manufacturing a display device. [Figure 33] A cross-sectional view showing an example of an input / output device. [Figure 34] A diagram showing an example of a display module. [Figure 35] A diagram showing an example of an electronic device. [Figure 36] A diagram showing an example of an electronic device. [Figure 37] A diagram illustrating the method for preparing and peeling the sample in Example 1. [Figure 38]A perspective view showing the apparatus used to measure the force required for peeling in Example 1. [Figure 39] A diagram illustrating the peeling results of the sample from Example 1. [Figure 40] A diagram illustrating the peeling results of the sample from Example 2. [Figure 41] Cross-sectional STEM image of the sample from Example 3. [Figure 42] A photograph showing the peeling result of the sample from Example 3, and a cross-sectional STEM image. [Figure 43] A photograph showing the peeling results of the sample from Example 4. [Figure 44] Cross-sectional STEM image of the sample from Example 5. [Figure 45] A photograph showing the peeling result of the sample from Example 5, and a cross-sectional STEM image. [Figure 46] A schematic cross-sectional view of the display device of Example 6. [Figure 47] A photograph of the display of the device in Example 6. [Modes for carrying out the invention]

[0032] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. It will be easily understood by those skilled in the art to obtain this. Therefore, the present invention is as shown in the embodiments below. The interpretation is not limited to the content stated herein.

[0033] In the configuration of the invention described below, the same part or part having a similar function is included. The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0034] Furthermore, the position, size, and extent of each component shown in the drawings are, for the sake of ease of understanding, actually The location, size, and range may not be described. Therefore, the disclosed invention is not always Furthermore, it is not limited to the location, size, scope, etc., disclosed in the drawings.

[0035] Note that the words "membrane" and "layer" may differ in some cases or depending on the situation. Therefore, they can be interchanged. For example, the term "conductive layer" can be replaced with "conductive film." It is possible to change the term to "insulating film". Alternatively, for example, the term "insulating film" can be changed to It is possible to change the term to "insulating layer".

[0036] In this specification and elsewhere, "metal oxide" refers to a broad term for metals. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). Oxide semiconductors (also called OS) They are classified into the following categories. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal Oxides are sometimes referred to as oxide semiconductors. Therefore, when referring to OS FETs... Therefore, it can be rephrased as a transistor having a metal oxide or oxide semiconductor.

[0037] Furthermore, in this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxi They are sometimes collectively referred to as (de) metal oxides (met It may also be called al oxynitride.

[0038] (Embodiment 1) In this embodiment, the method for manufacturing a peeling method and a display device according to one aspect of the present invention is shown in Figures 1 to 1. Let's explain using 18.

[0039] In this embodiment, a display device having a transistor and an organic EL element (active matrix Let's take a cycloelectric EL display device (also known as a cycloelectric display device) as an example. This display device has a substrate that can By using a flexible material, a flexible device can be created. One aspect of the invention is a light-emitting device, a display device, and an input / output device (touch panel) using an organic EL element. Semiconductor devices, light-emitting devices, display devices, and input devices using other functional elements (not limited to NEL, etc.) It can be applied to various devices such as output devices.

[0040] In this embodiment, first, a first material layer, in this case a metal oxide layer, is formed on the substrate. Next, a second material layer, in this case a resin layer, is formed on the metal oxide layer. Specifically, the resin... Alternatively, a first layer is formed using a material containing a resin precursor, and the first layer is subjected to heat treatment. This process forms a resin layer. Then, the metal oxide layer and the resin layer are separated.

[0041] In this embodiment, a base layer (also called a base layer) is formed between the substrate and the resin layer. The underlying layer is a layer with lower adhesion (bonding) to the resin layer than the substrate. This explanation uses the example of using a metal oxide layer as the underlayer, but it is not limited to this. .

[0042] Heat treatment can reduce the adhesion (bonding) between the metal oxide layer and the resin layer.

[0043] An example of the principle for separating the metal oxide layer and the resin layer will be explained using Figures 1 to 3.

[0044] First, we will explain the bonding between the metal oxide layer 20 and the resin layer 23 using Figure 1.

[0045] In Figure 1, the metal oxide layer 20 and the resin layer 23 are laminated. The fat layer 23 may also be the first layer (before heating).

[0046] It is assumed that a bond has formed between the metal oxide layer 20 and the resin layer 23 (or the first layer). Specifically, chemical bonds such as covalent bonds, ionic bonds, and hydrogen bonds are formed in the metal oxide layer 20. It occurs between the resin layer 23 (or the first layer).

[0047] In step (i) of Figure 1, the metal M in the metal oxide layer 20 and the carbon in the resin layer 23 This shows an example where element C is bonded by oxygen O.

[0048] By heating the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer), the formula (1 The reaction shown below and in Figure 1 occurs. By heating, H2O (water vapor) is produced. The bond between metal M-oxygen O-carbon C is broken. Then, the metal oxide layer 20 and the resin layer 23 The bond between them will be a hydrogen bond.

[0049] MO-C + H2O → M-OH + C-OH ... (1)

[0050] In step (ii) of Figure 1, the metal M and oxygen O in the metal oxide layer 20 bond to the resin. This shows an example where the carbon C in layer 23 is bonded to another oxygen O. The two oxygen atoms are, It forms a covalent bond with another hydrogen atom. Also, the two oxygen atoms bond with each other. It forms hydrogen bonds with the hydrogen atoms present.

[0051] Hydrogen bonds are much weaker than covalent bonds and can therefore be easily broken. Therefore, the metal oxide layer 20 and the resin layer 23 can be easily separated by physical force. It is possible.

[0052] In step (iii) of Figure 1, the oxygen and hydrogen atoms that were bonded by hydrogen bonds separate, resulting in metal oxidation. An example is shown in which the material layer 20 and the resin layer 23 are separated. The metal M contained in the metal oxide layer 20 and Oxygen O is bonded, and carbon C in the resin layer 23 is bonded to another oxygen O. The two oxygens Each of them forms a covalent bond with another hydrogen atom.

[0053] As described above, the laminated structure of the metal oxide layer 20 and the resin layer 23 (or the first layer) is heated. This results in a strong bond between the metal oxide layer 20 and the resin layer 23 (or the first layer) by H2O. This changes the bond between the metal oxide layer 20 and the resin layer 23 into a weak hydrogen bond. The force required for separation can be reduced.

[0054] Next, using Figure 2, we will show how H2O inhibits the adhesion between the metal oxide layer 20 and the resin layer 23. The effects (hereinafter referred to as inhibitory effects) will be explained below.

[0055] In Figure 2, a metal oxide layer 20 is provided on the fabricated substrate 14, and a resin is formed on the metal oxide layer 20. A fat layer 23 is provided.

[0056] The interface between the metal oxide layer 20 and the resin layer 23, and one or both of the metal oxide layer 20 In this case, H2O, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H) * ),acid Elementary radical (O * ), hydroxyl radical (OH * ) One or more of these exist. These are the process of forming the metal oxide layer 20 and the doping process after forming the metal oxide layer 20. It can be supplied by the process, etc. In step (i) of Figure 2, the metal oxide layer 20 and the resin The interface with the lipid layer 23 and the metal oxide layer 20 each contain H2O, H, O, etc. Here is an example.

[0057] The interface between the metal oxide layer 20 and the resin layer 23, and the H and O supplied into the metal oxide layer 20 H2O and other substances solidify (harden) the resin layer 23 (for example, polyimide). During the process (for example, heating at 350°C), H2O may precipitate at the interface. In this case, H2O deposited at the interface between the metal oxide layer 20 and the resin layer 23 is released from the metal oxide layer 20. This may hinder adhesion with the resin layer 23. In other words, the metal oxide layer 20 and the resin layer 2 The H2O precipitated at the interface with 3 has an inhibitory effect on adhesion. Figure 2 shows In step (ii), H2O in the metal oxide layer 20 interacts with the resin layer 23. An example of deposition at the interface is shown. Also, in step (ii) of Figure 2, water in the metal oxide layer 20 The element and hydroxyl group (OH) precipitate as H2O at the interface between the metal oxide layer 20 and the resin layer 23. Here is an example.

[0058] In step (iii) of Figure 2, an example is shown where the metal oxide layer 20 and the resin layer 23 are separated. As shown, heating causes H2O to turn into water vapor, expanding its volume. This causes the metal oxide layer to expand. The adhesion between layer 20 and the resin layer 23 weakens, causing separation between the metal oxide layer 20 and the resin layer 23. It is possible.

[0059] Next, we will explain the reaction shown in formula (1) above and the H2O involved in the inhibitory effect.

[0060] H2O is present in the metal oxide layer 20, in the resin layer 23, and between the metal oxide layer 20 and the resin layer 23. It may be present at interfaces, etc.

[0061] In addition, hydrogen (H), oxygen (O), hydroxyl group (OH), hydrogen radical (H ), * ), oxygen radical (O * ), * hydroxyl radical (OH ) and the like, which exist in the metal oxide layer 20, the resin layer 23, and the interface between the metal oxide layer 20 and the resin layer 23, may be heated to form H2O.

[0062] One or more of H2O, hydrogen (H), oxygen ( O), hydroxyl group (OH), hydrogen radical (H ), oxygen radical (O<00​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​​ For example, when forming the metal oxide layer 20, in the metal oxide layer 20, or in the metal oxide layer 2 On the surface, H2O, hydrogen, oxygen, hydroxyl group, hydrogen radical (H * ), oxygen radical (O * ) , hydroxyl radical (OH * It is preferable to include a large amount of ) etc.

[0066] Specifically, a metal layer is formed, and the surface of the metal layer is subjected to radical treatment to create a metal oxide layer 2 It is preferable to form 0. In radical treatment, oxygen radicals and hydroxyl radicals It is preferable to expose the surface of the metal layer to an atmosphere containing at least one of the following: for example, acid Plasma treatment is performed in an atmosphere containing either or both of the following: It is preferable.

[0067] Alternatively, a metal oxide layer 20 may be formed, and the surface of the metal oxide layer 20 may be subjected to radical treatment. This is preferable. In radical treatment, oxygen radicals, hydrogen radicals, and hydroxyl radicals are used. It is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of the following. For example, in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O) It is preferable to perform a Zuma treatment.

[0068] Radical treatment can be performed using a plasma generator or an ozone generator.

[0069] For example, oxygen plasma treatment, hydrogen plasma treatment, water plasma treatment, ozone treatment, etc. This can be done. Oxygen plasma treatment can be performed by generating plasma in an oxygen-containing atmosphere. Yes, it is possible. Hydrogen plasma treatment can be performed by generating plasma in a hydrogen-containing atmosphere. Water plasma treatment is performed by generating plasma in an atmosphere containing water vapor (H2O). This can be done. In particular, by performing water plasma treatment, moisture can be removed from the surface or inside the metal oxide layer 20. It is preferable to be able to include a large amount of it.

[0070] It contains two or more of the following: oxygen, hydrogen, water (water vapor), and inert gases (typically argon). Plasma treatment may be performed under an oxygen-rich atmosphere. For example, the plasma treatment may be performed under an oxygen-rich atmosphere. Plasma treatment in an atmosphere containing hydrogen, plasma treatment in an atmosphere containing oxygen and water Plasma treatment in an atmosphere containing water and argon, in an atmosphere containing oxygen and argon Examples include plasma treatment, or plasma treatment in an atmosphere containing oxygen, water, and argon. It can be done. By using argon gas as one of the gases for plasma treatment, metal layers or This is preferable because it allows plasma processing to be performed while damaging the metal oxide layer 20. It is suitable.

[0071] Two or more plasma treatments may be performed continuously without exposure to the atmosphere. For example, Argo Water plasma treatment may be performed after the plasma treatment.

[0072] As a result, as shown in Figure 3, hydrogen, oxygen, and water are present on or inside the metal oxide layer 20. Elementary radical (H * ), oxygen radical (O * ), hydroxyl radical (OH * ) and others This is possible. Also, in Figure 3, the resin layer 23 has hydrogen H bonded to carbon C and hydroxyl group OH. Examples of substances containing these are shown. It is conceivable that these will turn into H2O upon heating.

[0073] The heat treatment is preferably carried out in an atmosphere containing oxygen. By heating the layer, a resin layer 23 containing a large amount of oxygen can be formed. The more it contains, the easier it is to separate the resin layer 23 and the metal oxide layer 20.

[0074] For example, heating can be performed while flowing an oxygen-containing gas through it.

[0075] The heat treatment is more preferably carried out in an atmospheric environment. The first layer is heated in an atmospheric environment. This allows for the formation of a resin layer 23 that contains a large amount of oxygen and moisture. The more of this substance it contains, the easier it is to separate the resin layer 23 and the metal oxide layer 20. By heating the first layer under atmospheric conditions (without flowing gas), the heat treatment can be performed while flowing gas. Compared to the usual method, it may be possible to form a resin layer 23 that contains more moisture.

[0076] Moisture in the resin layer 23 reduces the adhesion or bonding between the resin layer 23 and the metal oxide layer 20. It can have the effect of causing moisture to form between the resin layer 23 and the metal oxide layer 20. It can have the effect of weakening or breaking the bonds between them.

[0077] It is preferable to supply a liquid containing water to the separation interface before or during separation. The presence of water reduces the adhesion or bonding between the resin layer 23 and the metal oxide layer 20. This allows for a reduction in the force required for separation. Furthermore, by supplying a liquid containing water to the separation interface... By supplying it, the effect of weakening or breaking the bond between the resin layer 23 and the metal oxide layer 20 is achieved. This can be effective. By utilizing chemical bonding with the liquid, the resin layer 23 and the metal oxide layer 20 The bonds between them can be broken and separation can proceed. For example, resin layer 23 and metal oxide layer 2 If a hydrogen bond is formed between 0 and the tree, then when a liquid containing water is supplied, the water and the tree will bond. Hydrogen bonds are formed between the resin layer 23 and the metal oxide layer 20, and the resin layer 23 and the metal oxide It is possible that the hydrogen bonds between layer 20 and the other layer will break.

[0078] The metal oxide layer 20 preferably has low surface tension and high wettability to liquids containing water. This allows the water-containing liquid to spread across the entire surface of the metal oxide layer 20, separating the interface. A liquid containing water can be easily supplied to it. As the water spreads throughout the metal oxide layer 20, a uniform solution is created. It can be peeled off.

[0079] The contact angle of the metal oxide layer 20 with the water-containing liquid is preferably greater than 0° and 60° or less. A temperature greater than 0° and less than or equal to 50° is preferable. Furthermore, extremely good wettability to liquids containing water is desirable. When the contact angle is high (for example, when the contact angle is less than approximately 20°), it is difficult to obtain an accurate value of the contact angle. This can happen. The metal oxide layer 20 is preferable if it has high wettability to liquids containing water. Therefore, even if the wettability to liquids containing water is so high that the accurate value of the above contact angle cannot be obtained, good.

[0080] The presence of a water-containing liquid at the separation interface causes static electricity generated during separation to be absorbed into the layer being separated. It suppresses adverse effects on functional elements (such as semiconductor elements being destroyed by static electricity). It is possible to remove static electricity from the surface of the peeled layer exposed by separation using an ionizer or the like. good.

[0081] If a liquid is supplied to the separation interface, the surface of the peeled layer exposed by the separation may be dried. .

[0082] The temperature of the substrate during separation can be, but is not limited to, room temperature. Before separation or after separation During separation, the substrate temperature should be higher than room temperature, preferably 200°C or lower, and more preferably 100°C to 200°C. This may also be done. For example, the substrate may be heated to a temperature between 130°C and 200°C. Raising the temperature above room temperature can sometimes strengthen the action of water and reduce the force required for separation. When peeling using physical force (also called mechanical energy), the temperature of the substrate is increased to peel it off (substrate By heating and peeling the substrate, the peelability can be further improved. That is, the temperature of the substrate can be increased. When the material is enhanced and peeled off, it acts as an assist in improving peelability.

[0083] For example, the resin layer and the metal oxide layer may be separated while heating at least a portion of the substrate. Furthermore, the peeled layer separated from the substrate may be cooled during or after separation.

[0084] The resin layer and the metal oxide layer may be separated while supplying a liquid at a temperature between room temperature and 100°C.

[0085] Before separation, the substrate on which the resin layer is formed is kept in a high-humidity environment, more preferably in a high-temperature, high-humidity environment. It is preferable that it exists. In particular, a state in which a separation starting point is formed and a part of the separation interface is exposed. By storing it in this way, moisture can be efficiently supplied to the separation interface. This allows for separation The force required can be reduced. Specifically, the humidity of the storage environment should be between 50% and 100%. Ideally, the moisture content should be between 70% and 100%. The storage environment temperature should be higher than room temperature. It is preferable to keep the temperature below 0°C, and more preferably between 50°C and 70°C.

[0086] Similarly, separation is preferably carried out under high humidity conditions, or under more advanced high-temperature and high-humidity conditions. This allows moisture to be supplied to the separation interface, reducing the force required for separation. ru.

[0087] In this embodiment, by controlling the formation conditions of the metal oxide layer and the resin layer, the metal oxide The layer and the resin layer can be easily separated. In other words, in order to improve the peelability of the resin layer, The process of irradiating the entire surface of the resin layer with laser light is unnecessary.

[0088] When irradiating the entire surface of a resin layer with laser light, it is preferable to use a linear laser beam. However, laser equipment for irradiating linear laser beams is expensive in itself, and The running costs are high. In this embodiment, the laser device is not required, so the cost is significantly reduced. This makes it possible to reduce costs. Furthermore, it is easy to apply to large-format substrates.

[0089] Furthermore, when irradiating the resin layer with laser light through the substrate, foreign matter such as dust may be present on the light-irradiated surface of the substrate. If it adheres, uneven light irradiation occurs, resulting in areas of low peelability in the resin layer, and the resin layer and substrate... The yield of the separation process may decrease. In this embodiment, the resin is separated by heat treatment. To improve the peelability of the layer. Even if foreign matter is attached to the substrate, uneven heating of the resin layer is less likely to occur. Furthermore, the yield in the process of separating the resin layer from the substrate is less likely to decrease.

[0090] Because there is no process of irradiating the entire surface of the resin layer through the substrate with laser light, the substrate does not receive laser light. It can prevent damage from irradiation. Even after using the substrate once, its strength does not decrease. This allows for the reuse of circuit boards, thus reducing costs.

[0091] Alternatively, in this embodiment, first, a metal oxide layer is formed on the substrate. Next, the metal oxide A first layer is formed on the layer using a material containing a resin or resin precursor. Next, the first A resin layer is formed by heat treatment of the layer. Next, resin is applied to the substrate and the resin layer. An insulating layer is formed to cover the edges of the oil layer. Next, a channel is formed on the resin layer through the insulating layer. A transistor having a metal oxide in the region is formed. Next, at least a portion of the resin layer is made gold By separating from the metal oxide layer, a starting point for separation is formed. Then, the metal oxide layer and the resin layer Separate the two.

[0092] The substrate has areas where the resin layer makes contact and areas where the insulating layer makes contact. The insulating layer is It is provided to cover the edges of the resin layer. The insulating layer is denser with respect to the metal oxide layer compared to the resin layer. It has high adhesion or bonding properties. By providing an insulating layer to cover the edges of the resin layer, the resin layer becomes the substrate This prevents unintended peeling. For example, the resin layer may peel off during transport of the substrate. This can be suppressed. And by forming a separation starting point, the metal acid can be separated at the desired timing. The oxide layer and the resin layer can be separated. In other words, in this embodiment, the metal oxide layer and The timing of the separation of the resin layer can be controlled, and the force required for separation is small. This allows for the use of gold. This can improve the yield in the separation process of the oxide layer and the resin layer, and in the manufacturing process of the display device. ru.

[0093] The display device of this embodiment has a metal oxide in the channel formation region of the transistor. This is preferable. Metal oxides can function as oxide semiconductors.

[0094] Low-temperature polysilicon (LTPS) is used in the channel formation region of the transistor. When using ature poly-silicon, the temperature range is approximately 500°C to 550°C. Because heat is required, the resin layer must have heat resistance. Also, the laser crystallization process... To mitigate damage, it may be necessary to increase the thickness of the resin layer.

[0095] On the other hand, transistors using metal oxides in the channel formation region can operate at temperatures below 350°C, and even further... It can be formed at temperatures below 300°C. Therefore, high heat resistance is not required for the resin layer. Therefore, the heat resistance temperature of the resin layer can be lowered, expanding the range of material choices. Transistors using metal oxides in the channel formation region do not require the laser crystallization process. Therefore, the thickness of the resin layer can be reduced. High heat resistance is not required for the resin layer, and thinning is possible. This allows for a significant reduction in device manufacturing costs. Furthermore, by using LTPS... Compared to the previous method, this method simplifies the process, which is preferable.

[0096] However, in one aspect of the present invention, the display device has a metal oxide in the channel formation region of the transistor. The configuration is not limited to having a transistor. For example, the display device of this embodiment has a transistor chat Silicon can be used in the filament formation region. Amorphous silicon can be used as the silicon. Cone or crystalline silicon can be used. As for crystalline silicon, microcrystalline silicon Examples include silicon, polycrystalline silicon, and monocrystalline silicon.

[0097] It is preferable to use LTPS in the channel formation region. It can be formed at lower temperatures than single-crystal silicon and has higher performance than amorphous silicon. It features field-effect mobility and high reliability.

[0098] The thickness of the resin layer may be 0.1 μm or more and 5 μm or less. By forming a thin resin layer This allows for the manufacture of display devices at a low cost. Furthermore, it enables the display devices to be made lighter and thinner. Furthermore, it can increase the flexibility of the display device.

[0099] In this embodiment, transistors and the like are formed at a temperature below the heat resistance temperature of the resin layer. The heat resistance can be evaluated, for example, by the weight loss rate due to heating, specifically the temperature at which weight loss occurs by 5%. In the peeling method and the method for manufacturing the display device of this embodiment, the maximum temperature during the process is lowered. This is possible. For example, in this embodiment, the temperature at which the resin layer loses 5% of its weight is 200°C or higher. Below 650°C, between 200°C and 500°C, between 200°C and 400°C, or 200°C The temperature can be kept below 350°C. Therefore, the range of material selection is broadened. The temperature at which the layer loses 5% of its weight may be higher than 650°C.

[0100] The method for manufacturing the display device of this embodiment will be described in detail below.

[0101] Furthermore, the thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are produced by sputtering. Chemical vapor deposition (CVD) method, true Air deposition, pulsed laser deposition (PLD) n) method, Atomic Layer Deposition (ALD) method, etc. It can be formed using the following methods: Plasma Chemical Vapor Deposition (PECVD). :Plasma Enhanced Chemical Vapor Depositi The CVD method or thermal CVD method may also be used. An example of the thermal CVD method is organometallic vapor deposition (MO CVD (Metal Organic CVD) method may also be used.

[0102] Thin films (insulating films, semiconductor films, conductive films, etc.) that make up display devices are made using spin coating, dip coating, Spray coating, inkjet, dispensing, screen printing, offset printing, dock Methods such as turn knife, slit coat, roll coat, curtain coat, knife coat, etc. It can be formed more effectively.

[0103] When processing the thin films that make up the display device, processing can be done using methods such as lithography. Alternatively, island-like thin films may be formed by a film deposition method using a shadow mask. Alternatively, the thin film can be processed using methods such as nanoimprinting, sandblasting, or lift-off. Alternatively, a photolithography method may be used, which involves forming a resist mask on the thin film to be processed. A method for processing the thin film by etching or the like to remove the resist mask, and a method for photosensitive A method of forming a thin film, followed by exposure and development, to process the thin film into a desired shape. And, there is.

[0104] When using light in lithography, the light used for exposure is, for example, i-line (wavelength 365n). m), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, or ArF laser light can be used. It can also be used. Alternatively, exposure may be performed using immersion lithography. Examples of light sources include extreme ultraviolet (EUV) light and X-rays. It may also be used. Furthermore, an electron beam can be used instead of the light used for exposure. Using ultraviolet light, X-rays, or electron beams is preferable because it enables extremely fine processing. Furthermore, when performing exposure by scanning a beam such as an electron beam, photomasking is required. The "suku" is unnecessary.

[0105] Thin film etching can be performed using dry etching, wet etching, or sandblasting. These can be used.

[0106] [Removal Method] First, a metal oxide layer 20 is formed on the fabricated substrate 14 (Figure 4(A1)). Alternatively, A metal layer 19 and a metal oxide layer 20 are laminated on the substrate 14 (Figure 4(A2)).

[0107] The fabricated substrate 14 has sufficient rigidity to facilitate transport and is resistant to the temperatures during the fabrication process. It has heat resistance. Materials that can be used for the fabricated substrate 14 include, for example, glass. Examples include quartz, ceramics, sapphire, resin, semiconductors, metals, or alloys. Examples of materials include alkali-free glass, barium borosilicate glass, and aluminobosilicate glass. Examples include acidic glass.

[0108] As described above, in this embodiment, a base layer is formed between the fabricated substrate 14 and the resin layer 23. The geological layer has lower adhesion (bonding) to the resin layer 23 than the fabricated substrate 14. In this example, we will explain the case where a metal oxide layer 20 is used, but it is not limited to this. .

[0109] Specifically, the base layer contains titanium, molybdenum, aluminum, tungsten, and silicon. Indium, zinc, gallium, tantalum, tin, hafnium, yttrium, zirconium One of the following: luminum, magnesium, lanthanum, cerium, neodymium, bismuth, and niobium Alternatively, layers having multiple layers can be used. The base layer may contain metals, alloys, and their compounds. It can contain materials (such as metal oxides). The base layer is titanium, molybdenum, aluminum. One of the following: tungsten, silicon, indium, zinc, gallium, tantalum, and tin It is preferable to have one or more.

[0110] Furthermore, the materials used for the underlayer are not limited to inorganic materials; organic materials may also be used. For example, organic E Various organic materials that can be used in the EL layer of an L element may be used. Furthermore, a vapor-deposited film of organic material can be used. This allows for the formation of a film with low adhesion.

[0111] Various metals and alloys can be used for the metal layer 19.

[0112] Various metal oxides can be used for the metal oxide layer 20. Examples of metal oxides include: For example, titanium dioxide (TiO x ), molybdenum oxide, aluminum oxide, tungsten oxide Indium tin oxide (ITSO) containing silicon, indium zinc oxide, In-G Examples include α-Zn oxides.

[0113] Other metal oxides include indium oxide, titanium-containing indium oxide, and tan. Indium oxide containing gusten, indium tin oxide (ITO), titanium-containing ITO , indium zinc oxide containing tungsten, zinc oxide (ZnO), Zn containing gallium O, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide Magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, tin oxide, vinyl oxide Examples include smus, titanates, tantalates, and niobates.

[0114] There are no particular limitations on the method for forming the metal oxide layer 20. For example, sputtering, plasma C It can be formed using methods such as VD (Vacuum Deposition), vapor deposition, sol-gel method, electrophoresis, and spray method. .

[0115] After forming a metal layer, oxygen is introduced into the metal layer to form a metal oxide layer 20. This can be done. In this case, only the surface of the metal layer or the entire metal layer is oxidized. In this case, by introducing oxygen into the metal layer, the laminated structure of the metal layer 19 and the metal oxide layer 20 is formed. This is accomplished (Figure 4(A2)).

[0116] As shown in Figure 4(A2), a metal layer 19 is provided between the fabricated substrate 14 and the metal oxide layer 20. In this case, it is preferable to perform the separation process while heating the fabricated substrate 14. The metal layer 19 conducts heat. Because of its high conductivity, when the metal layer 19 is heated, heat is evenly distributed throughout the entire metal layer 19. Therefore, it is conceivable that it can be peeled off more uniformly.

[0117] For example, a metal layer can be oxidized by heating it in an oxygen-containing atmosphere. It is preferable to heat the metal layer while flowing an oxygen-containing gas through it. The temperature is preferably between 100°C and 500°C, and more preferably between 100°C and 450°C. A temperature of 100°C to 400°C is more preferable, and a temperature of 100°C to 350°C is even more preferable. stomach.

[0118] The metal layer is preferably heated at a temperature not higher than the maximum temperature in the fabrication of the transistor. . This can prevent the maximum temperature in the fabrication of the display device from increasing. By making it not higher than the maximum temperature in the fabrication of the transistor, it becomes possible to reuse manufacturing equipment etc. in the fabrication process of the transistor, so that additional equipment investment etc. can be suppressed. Therefore, a display device with suppressed production costs can be obtained. For example, when the fabrication temperature of the transistor is up to 350 °C, the heat treatment temperature is preferably 350 °C or lower.

[0119] Alternatively, the metal layer can be oxidized by performing radical treatment on the surface of the metal layer. In the radical treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing at least one of oxygen radicals and hydroxyl radicals. For example, it is preferable to perform plasma treatment in an atmosphere containing one or both of oxygen or water vapor (H2O).

[0120] [[ID=((26))]]As described above, by including hydrogen, oxygen, hydrogen radicals (H * ), oxygen radicals (O [[ID=((31))]] * ), hydroxyl radicals (OH [[ID=((33))]] * ) etc. on the surface or inside of the metal oxide layer 20, the force required for separating the metal oxide layer 20 and the resin layer 23 can be reduced. From this also, it is suitable to perform radical treatment or plasma treatment in the formation of the metal oxide layer 20.

[0121] When the metal layer is oxidized by performing radical treatment or plasma treatment on the surface of the metal layer, the step of heating the metal layer at a high temperature becomes unnecessary. Therefore, the maximum temperature in the fabrication of the display device This prevents the temperature from becoming too high. Specifically, it prevents the maximum temperature in the fabrication of the display device from reaching 350°C. It becomes easy to keep the temperature below ℃.

[0122] Alternatively, the metal oxide layer 20 can be formed under an oxygen atmosphere. For example, an oxygen-containing By depositing a metal oxide film using the sputtering method while flowing a gas, the metal acid A metal oxide layer 20 can be formed. In this case as well, radical treatment is performed on the surface of the metal oxide layer 20. This is preferable. In radical treatment, oxygen radicals, hydrogen radicals, and hydroxyl radicals are used. It is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of the following: For example, in an atmosphere containing one or more of oxygen, hydrogen, or water vapor (H2O) Razma treatment is preferable.

[0123] For details on radical treatment, please refer to the information provided earlier.

[0124] Other methods for introducing oxygen, hydrogen, water, etc. include ion implantation and ion doping. Plasma immersion ion implantation and the like can be used.

[0125] The thickness of the metal layer 19 is preferably 1 nm to 100 nm, and preferably 1 nm to 50 nm. More preferably, the wavelength is 1 nm or more and more preferably 20 nm or less.

[0126] The thickness of the metal oxide layer 20 is preferably, for example, 1 nm to 200 nm, and 5 nm or more. A wavelength of 100 nm or less is more preferable, and 5 nm to 50 nm is even more preferable. When forming the metal oxide layer 20 using this method, the final thickness of the metal oxide layer 20 This can sometimes be thicker than the thickness of the deposited metal layer.

[0127] Before or during separation, a liquid containing water is supplied to the interface between the metal oxide layer 20 and the resin layer 23, so that the force required for separation can be reduced. The smaller the contact angle between the metal oxide layer 20 and the liquid, the more the effect of liquid supply can be enhanced. Specifically, the contact angle of the metal oxide layer 20 with the liquid containing water is preferably greater than 0° and 60° or less, more preferably greater than 0° and 50° or less. The metal oxide layer 20 preferably has a photocatalytic function. By irradiating the metal oxide layer having a photocatalytic function with light, a photocatalytic reaction can be caused. Thereby, even without irradiating light with high energy such as laser light, the bonding force between the metal oxide layer and the resin layer can be weakened, and it can be easily separated. Titanium oxide, tungsten oxide, etc. are suitable for the metal oxide layer 20. When titanium oxide is used, the cost can be reduced compared to tungsten oxide, which is preferable.

[0128] For example, ultraviolet light is irradiated to the metal oxide layer 20. After the formation of the metal oxide layer 20 and before the formation of the first layer 24, ultraviolet light can be directly irradiated to the metal oxide layer without passing through other layers. Or, ultraviolet light may be irradiated to the metal oxide layer 20 through the production substrate 14 before or during separation. For the irradiation of ultraviolet light, an ultraviolet lamp can be preferably used. Examples of the ultraviolet lamp include a mercury lamp, a mercury xenon lamp, a metal halide lamp, etc. Note that not limited to ultraviolet light, light having a wavelength that activates the metal oxide layer can be appropriately irradiated. The metal oxide layer 20 may use titanium oxide added with metal or nitrogen.

[0129] For example, ultraviolet light is irradiated to the metal oxide layer 20. After the formation of the metal oxide layer 20 and before the formation of the first layer 24, ultraviolet light can be directly irradiated to the metal oxide layer without passing through other layers. Or, ultraviolet light may be irradiated to the metal oxide layer 20 through the production substrate 14 before or during separation. For the irradiation of ultraviolet light, an ultraviolet lamp can be preferably used. Examples of the ultraviolet lamp include a mercury lamp, a mercury xenon lamp, a metal halide lamp, etc. Note that not limited to ultraviolet light, light having a wavelength that activates the metal oxide layer can be appropriately irradiated.

[0130] The metal oxide layer 20 may use titanium oxide added with metal or nitrogen.​​​​​​​ When a metal oxide layer 20 is formed using titanium oxide to which the element has been added, it is not ultraviolet light, but It can be activated by visual light.

[0131] Next, a first layer 24 is formed on the metal oxide layer 20 (Figure 4(B)).

[0132] Figure 4(B) shows an example in which the first layer 24 is formed on the entire surface of the metal oxide layer 20 using a coating method. This is shown. However, it is not limited to this, and the first layer 24 may be formed using a printing method or the like. Island-shaped first layers 24, first layers 24 with openings or uneven shapes, etc. are formed on layer 20. That's fine.

[0133] The first layer 24 can be formed using various resin materials (including resin precursors).

[0134] The first layer 24 is preferably formed using a thermosetting material.

[0135] The first layer 24 may be formed using a photosensitive material, or a non-photosensitive material ( It may also be formed using a non-photosensitive material.

[0136] When a photosensitive material is used, a portion of the first layer 24 can be extracted using a light-based lithography method. By removing the material, a resin layer 23 of the desired shape can be formed.

[0137] The first layer 24 is formed using a material containing polyimide resin or a polyimide resin precursor. It is preferable that the first layer 24 is made of a material containing, for example, a polyimide resin and a solvent, Polyimide can be formed using materials containing polyamic acid and a solvent. Since it is a material suitable for use in flattened films and the like, the film deposition equipment and materials can be shared. Therefore, no new devices or materials are required to realize the configuration of one aspect of the present invention.

[0138] Specifically, the resin layer 23 is made of the compound (oxydiphthalic acid) represented by structural formula (100). It is preferable to limit the number of residues.

[0139] [ka]

[0140] The resin layer 23 contains an acid component including oxydiphthalic acid or an oxydiphthalic acid derivative, and an aromatic A polyimide tree obtained using an amine component containing a group amine or aromatic amine derivative. Fat is preferred. As an oxydiphthalic acid derivative, for example, oxydiphthalic anhydride is The resin layer 23 may also contain fluorine. If present, the fluorine is used to form hydrogen bonds between the metal oxide layer 20 and the resin layer 23. It can happen.

[0141] Furthermore, polyimide resin or polyimide resin that can be suitably used in the first layer 24 The physical properties of the material containing the precursor are shown in Table 1.

[0142] [Table 1]

[0143] The resin layer 23 can be formed using materials A to E shown in Table 1. Because reliability can be improved, the glass transition temperature (Tg) and 5% weight loss temperature of the material are Higher values ​​are preferable for each of these factors.

[0144] Other resin materials that can be used to form the first layer 24 include, for example, acrylic resin. Polyamide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benz Examples include zocyclobutene resins, phenolic resins, and precursors of these resins.

[0145] The first layer 24 is preferably formed using a spin coater. This allows for the uniform formation of a thin film on a large substrate.

[0146] The first layer 24 has a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP. It is preferable to form the product using a solution with a concentration of 10 cP or more, more preferably 50 cP or less. The lower the viscosity of the solution, the easier it is to apply. Also, the lower the viscosity of the solution, the less likely air bubbles are to be incorporated. It can be suppressed and a high-quality film can be formed.

[0147] Other methods for forming the first layer 24 include dipping, spray coating, and inkjet printing. Dispensing, screen printing, offset printing, doctor knife, slit coating, Examples include roll coats, curtain coats, and knife coats.

[0148] Next, the first layer 24 is subjected to a heat treatment to form the resin layer 23 (Figure 4(C)). ).

[0149] Heat treatment reduces the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. It is possible.

[0150] The heat treatment is preferably carried out in an atmosphere containing oxygen. This reduces the force required to separate the metal oxide layer 20 and the resin layer 23. The higher the oxygen content in the atmosphere, the more oxygen can be incorporated into the resin layer 23. The lipid layer and the metal oxide layer can be easily separated.

[0151] In the metal oxide layer 20, in the resin layer 23, or at the interface between the metal oxide layer 20 and the resin layer 23, etc. The moisture present reduces the force required to separate the metal oxide layer 20 and the resin layer 23. It can be made to lower it.

[0152] The presence of water between the metal oxide layer 20 and the resin layer 23 causes the metal oxide layer 20 and the resin layer The adhesion or bonding of 23 becomes lower. As a result, the metal oxide layer 20 and the resin layer 23 They can be easily separated at the interface.

[0153] Furthermore, by performing the heat treatment, water expands between the metal oxide layer 20 and the resin layer 23 (water (It turns into vapor and expands in volume). This also improves the adhesion between the metal oxide layer 20 and the resin layer 23. This can reduce the adhesive properties.

[0154] The heat treatment is carried out, for example, in an oxygen-containing atmosphere inside the heating device's chamber. It is possible to do so. Alternatively, the heat treatment can be performed in the chamber of a heating device, under an atmospheric environment, or in a hot plate. This can be done using rates, etc.

[0155] For example, the partial pressure of oxygen in the atmosphere during heat treatment is preferably 5% or more and less than 100%, and less than 10%. A value of less than 100% is more preferable, and a value of 15% or more but less than 100% is even more preferable.

[0156] Heat treatment is preferably carried out in an atmospheric environment. When heat treatment is carried out in an atmospheric environment, gas Compared to the case where the process is carried out while flowing, in the metal oxide layer 20, in the resin layer 23, or in the metal oxide layer Moisture is easily retained at the interface between the material layer 20 and the resin layer 23. Therefore, metal oxides The force required to separate layer 20 and resin layer 23 can be reduced.

[0157] Alternatively, the heat treatment may be carried out while circulating an oxygen-containing gas through the heating device's chamber. This can be done. Heat treatment can be performed by flowing only oxygen gas or a mixed gas containing oxygen gas. This can be done using oxygen and nitrogen or a noble gas (such as argon). A mixed gas containing [the specified substance] can be used.

[0158] Depending on the heating device, a high oxygen content in the atmosphere may cause the heating device to deteriorate. Yes. Therefore, when using a mixed gas containing oxygen gas, the acid in the total flow rate of the mixed gas is important. The proportion of the elemental gas flow rate is preferably 5% to 50%, and preferably 10% to 50%. It is more preferable to do so, and even more preferable to have a ratio of 15% to 50%.

[0159] The heat treatment temperature is preferably between 100°C and 500°C, and between 100°C and 450°C. More preferably, 100°C to 400°C, and more preferably, 100°C to 350°C. Even better.

[0160] The higher the heat treatment temperature, the more the peelability of the resin layer 23 can be improved.

[0161] Heat treatment can reduce the degassing components (e.g., hydrogen, water, etc.) in the resin layer 23. It is possible. In particular, it is preferable to heat each layer formed on the resin layer 23 at a temperature higher than the manufacturing temperature. This significantly suppresses degassing from the resin layer 23 during the transistor manufacturing process. It can be controlled.

[0162] For example, if the transistor fabrication temperature is up to 350°C, the film that will become the resin layer 23 is 35 It is preferable to heat at a temperature between 0°C and 480°C, and more preferably between 350°C and 400°C. Furthermore, a temperature of 350°C to 375°C is even more preferable. This allows for the fabrication of transistors. This significantly suppresses degassing from the resin layer 23 during the process.

[0163] The heat treatment temperature should preferably be below the maximum temperature used in transistor fabrication. i. By keeping the temperature below the maximum temperature for transistor fabrication, the transistor can be fabricated. This allows for the reuse of manufacturing equipment and other components in the process, thus reducing the need for additional capital investment. This is possible. Therefore, it can be a display device with reduced production costs. For example, if the transistor fabrication temperature is up to 350°C, the heat treatment temperature is 350°C. The following is preferable.

[0164] If the maximum temperature in transistor fabrication is equal to the temperature of the heat treatment, the heat treatment will be performed. This prevents the maximum temperature during the fabrication of the display device from becoming too high, and the resin layer 23 This is preferable because it can reduce the amount of degassed components.

[0165] The longer the heat treatment time, the more the peelability of the resin layer 23 can be improved.

[0166] By increasing the processing time, even if the heating temperature is relatively low, a higher heating temperature can be achieved. In some cases, peelability equivalent to that under certain conditions can be achieved. Therefore, depending on the configuration of the heating device, If the temperature cannot be increased, it is preferable to extend the processing time.

[0167] The heating time is preferably, for example, 5 minutes to 24 hours, and 30 minutes to 12 hours. More preferably, and even more preferably, 1 hour to 6 hours. Note that the heat treatment time is It is not limited to this. For example, heat treatment can be RTA (Rapid Thermal Annealing). When using the aling method, the duration may be less than 5 minutes.

[0168] Heating devices include electric furnaces and heat conduction or thermal radiation from heat sources such as resistance heating elements. Various devices can be used, such as devices that heat the material to be processed. For example, GRTA(G as Rapid Thermal Anneal) equipment, LRTA (Lamp Rap) RTA devices such as id Thermal Anneal devices can be used. TA equipment includes halogen lamps, metal halide lamps, xenon arc lamps, and carbon Light emitted from lamps such as arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps (electromagnetic This is a device that heats the object to be processed by radiation (waves). The GRTA device uses high-temperature gas This is a device that performs heat treatment. By using an RTA device, the processing time can be shortened. This is preferable for mass production. Furthermore, the heat treatment is performed using an in-line heating device. You may go ahead.

[0169] Here, for example, when a resin is used in the planarization layer of a display device, the resin is oxidized, To prevent deterioration, the resin must be cured under conditions where there is almost no oxygen. It is generally recommended to heat at the lowest possible temperature within the specified temperature range. However, Furthermore, in one aspect of the present invention, the surface of the first layer 24 which becomes the resin layer 23 is exposed, and oxygen is actively When exposed to an atmosphere containing the target, at a relatively high temperature (for example, a temperature of 200°C or higher) Heating is performed. This provides the resin layer 23 with high release properties.

[0170] Note that the thickness of the resin layer 23 may change from the thickness of the first layer 24 due to the heat treatment. For example, the solvent contained in the first layer 24 is removed, and hardening progresses and the density increases. As it increases, the volume decreases, and in some cases the resin layer 23 becomes thinner than the first layer 24. Alternatively, the volume increases due to the inclusion of oxygen during the heat treatment, and the first layer 24 is larger than the first layer 24. In some cases, the resin layer 23 may become thicker.

[0171] Before the heat treatment, a heat treatment (pre-baking) is performed to remove the solvent contained in the first layer 24. (Also called processing) may be performed. The temperature for the pre-baking process should be determined appropriately depending on the material used. It is possible to do so. For example, between 50°C and 180°C, between 80°C and 150°C, or 9 This can be done at temperatures between 0°C and 120°C. Alternatively, the heat treatment can also serve as a pre-baking process. Alternatively, the solvent contained in the first layer 24 may be removed by heat treatment.

[0172] The resin layer 23 is flexible. The fabricated substrate 14 is less flexible than the resin layer 23.

[0173] The thickness of the resin layer 23 is preferably 0.01 μm or more and less than 10 μm, and 0.1 μm It is more preferable that the size is 5 μm or less, and even more preferable that it is 0.5 μm or more and 3 μm or less. This is preferable. By forming a thin resin layer, a display device can be manufactured at low cost. Also, the surface This allows for lighter and thinner display devices. Furthermore, it can increase the flexibility of the display device. By using a low-viscosity solution, it becomes easier to form a thin resin layer 23. However, The thickness of the resin layer 23 may be 10 μm or more, although this is not limited to the above. The thickness of layer 3 may be 10 μm or more and 200 μm or less. The thickness of resin layer 23 is 10 μm or more. This is preferable because it increases the rigidity of the display device.

[0174] The thermal expansion coefficient of the resin layer 23 is preferably 0.1 ppm / °C or more and 50 ppm / °C or less. Furthermore, it is more preferable that the concentration be 0.1 ppm / °C or higher and 20 ppm / °C or lower, and 0.1 ppm It is even more preferable that the thermal expansion coefficient of the resin layer 23 is m / ℃ or more and 10 ppm / ℃ or less. The lower the temperature, the more likely it is that heating will cause cracks in the layers that make up transistors, etc. This can prevent damage to components such as the zista.

[0175] The visible light transmittance of the resin layer 23 is not particularly limited. For example, it may be a colored layer. It may be a light layer. When the resin layer 23 is located on the display surface side of the display device, the resin layer 23 is It is preferable that the material has high transmittance to visible light.

[0176] Next, a peelable layer 25 is formed on the resin layer 23 (Figure 4(D)).

[0177] For example, an insulating layer or a functional element (transistor, display element, etc.) is provided as the peelable layer 25. It is possible.

[0178] The peelable layer 25 preferably has an insulating layer. In the subsequent heating process , blocking hydrogen, oxygen, and water released from the metal oxide layer 20 and the resin layer 23, etc. It is preferable that it has the function of [doing something].

[0179] The layer to be peeled off is, for example, a silicon nitride film, a silicon oxide nitride film, or a silicon nitride oxide film. It is preferable to have a silicon nitride film, silane gas, hydrogen gas, and The insulating layer is deposited by plasma CVD using a deposition gas containing monia (NH3) gas. The thickness is not particularly limited. For example, 50 nm to 600 nm, preferably 100 nm. The thickness can be between m and 300 nm.

[0180] In this specification, "silicon oxidnitride" means a material whose composition contains more oxygen than nitrogen. This refers to a product with a high content of [the substance]. Furthermore, in this specification, "silicon nitride oxide" means [the substance]. This refers to a substance whose composition contains more nitrogen than oxygen.

[0181] Then, a protective layer is formed on the peelable layer 25. The protective layer is the outermost layer of the display device. The protective layer preferably has high transmittance to visible light. Having this feature can suppress scratches and cracks on the surface of the display device. Therefore, it is preferable.

[0182] Figure 4(D) shows an example in which a substrate 75a is bonded onto a release layer 25 using an adhesive layer 75b. show.

[0183] The adhesive layer 75b contains photocuring adhesives such as UV-curing adhesives, reaction-curing adhesives, and thermosetting adhesives. Various types of curing adhesives, such as adhesives and anaerobic adhesives, can be used. Adhesive sheets can also be used. It's okay to be there.

[0184] The substrate 75a may be made of, for example, polyethylene terephthalate (PET) or polyethylene naphtha. Polyester resins such as plate (PEN), polyacrylonitrile resin, acrylic resin, Liimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polysulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane Sun resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane Tan resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, poly Using transfluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. It is possible. The substrate 75a has a thickness of glass, quartz, resin, etc. that is flexible. Various materials such as metals, alloys, and semiconductors may be used.

[0185] Next, the fabricated substrate 14 and the resin layer 23 are separated. Due to low adhesion or bonding properties, separation occurs at the interface between the metal oxide layer 20 and the resin layer 23. Figure 4(E)).

[0186] For example, by applying a tensile force perpendicular to the resin layer 23, the fabricated substrate 14 and the resin layer 23 can be separated. Specifically, a part of the upper surface of the substrate 75a is adsorbed and upward By pulling, the resin layer 23 can be peeled off the fabricated substrate 14.

[0187] Here, during separation, a water-containing liquid such as water or an aqueous solution is added to the separation interface, and this liquid is added to the separation interface. By performing the separation in a way that allows it to penetrate the surface, separation can be made easier. Also, when separating... The static electricity generated can have adverse effects on functional elements such as transistors (semiconductor elements can become electrostatically charged). This can suppress damage (such as destruction by air). In Figure 4(E), the liquid supply mechanism 21 is used. An example of supplying liquid to the separation interface is shown.

[0188] The liquid to be supplied is water (preferably pure water), or a water-soluble solution that is neutral, alkaline, or acidic. Examples include liquids and aqueous solutions in which salts are dissolved. Other examples include ethanol and acetone. Furthermore, various organic solvents may be used.

[0189] Before separation, a portion of the resin layer 23 is separated from the fabricated substrate 14 to form a starting point for separation. Alternatively, a sharp object such as a blade can be inserted between the fabricated substrate 14 and the resin layer 23. A starting point for separation may be formed by inserting it. Alternatively, a sharp-shaped instrument may be used from the substrate 75a side. The resin layer 23 may be cut to form a starting point for separation. Alternatively, laser ablation may be performed. A separation starting point may be formed using a laser-based method such as the one described above.

[0190] In this embodiment, a metal oxide layer 20 and a resin layer 23 (or a first layer 24) are laminated, Heat treatment is performed. This improves the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. This can reduce the amount of radiation. Therefore, by irradiating the entire surface of the resin layer 23 with a laser, Furthermore, the fabricated substrate 14 and the resin layer 23 can be separated. This allows for low-cost display The device can be manufactured.

[0191] By using the peeling method of this embodiment, a low-cost, high-mass-productivity peeling method or semiconductor peeling method can be obtained. A method for manufacturing a body device can be provided. For example, in the peeling method of this embodiment, manufacturing A substrate 14 (for example, a glass substrate), or a laminate of the fabricated substrate 14 and the metal oxide layer 20 Because it can be used repeatedly, production costs can be reduced.

[0192] [Example of manufacturing method 1] Next, an example of a method for manufacturing the display device of this embodiment will be described. The peeling method described earlier and Explanations of similar parts may be omitted.

[0193] First, a metal oxide layer 20 is formed on the fabricated substrate 14 (Figure 5(A)). For 0, please refer to the description in the above peeling method.

[0194] Next, a first layer 24 is formed on the metal oxide layer 20 (Figure 5(B)). Therefore, you can refer to the description of the peeling method above.

[0195] In this embodiment, the first layer 24 is formed using a photosensitive and thermosetting material. The first layer 24 may be formed using a non-photosensitive material.

[0196] After forming the first layer 24, a heat treatment (pre-baking treatment) is performed to remove the solvent, Afterward, exposure is performed using a photomask. Subsequently, development is performed to remove unwanted parts. It can be removed. Next, the first layer 24, which has been processed into the desired shape, is subjected to heat treatment. This forms a resin layer 23 (Figure 5(C)). In Figure 5(C), the island-shaped resin layer 23 is An example of formation is shown.

[0197] Furthermore, the shape of the resin layer 23 is not limited to a single island shape; for example, it can have multiple island shapes or shapes with openings. Examples of shapes are also acceptable. Additionally, exposure techniques using halftone masks or graytone masks are also possible. An uneven surface shape may be formed on the surface of the resin layer 23 using techniques such as or multiple exposure technology.

[0198] A mask such as a resist mask or a hard mask is formed on the first layer 24 or the resin layer 23. By etching, a resin layer 23 of the desired shape can be formed. This method This is particularly suitable when using non-photosensitive materials.

[0199] For example, an inorganic film is formed on the resin layer 23, and a resist mask is formed on the inorganic film. After etching the inorganic film using a hard mask, the inorganic film is used as a hard mask to create a resin layer. 23 can be etched.

[0200] Inorganic films that can be used as hard masks include various inorganic insulating films and conductive layers. Examples include metal films and alloy films that can be used.

[0201] If the mask can be formed with an extremely thin thickness and removed simultaneously with etching, This is preferable because it reduces the step of removing the mask.

[0202] For details on the heat treatment, please refer to the description of the heat treatment in the peeling method described above.

[0203] Next, an insulating layer 31 is formed on the resin layer 23 (Figure 5(D)). The insulating layer 31 is formed on the resin layer 2 It is formed covering the end of 3. The resin layer 23 is not provided on the metal oxide layer 20. A portion exists. Therefore, it is possible to form an insulating layer 31 in contact with the metal oxide layer 20. Cut.

[0204] The insulating layer 31 is formed at a temperature lower than the heat resistance temperature of the resin layer 23. It is preferable to form it at a certain degree.

[0205] The insulating layer 31 prevents impurities contained in the resin layer 23 from forming transistors and display elements later. It can be used as a barrier layer to prevent diffusion. For example, the insulating layer 31 is a resin layer When 23 is heated, moisture and other substances contained in the resin layer 23 diffuse into the transistors and display elements. It is preferable to prevent this from happening. Therefore, it is preferable that the insulating layer 31 has high barrier properties.

[0206] Examples of insulating layers 31 include silicon nitride film, silicon oxide nitride film, silicon oxide film, Using inorganic insulating films such as silicon nitride film, aluminum oxide film, and aluminum nitride film It is possible to also use hafnium oxide film, yttrium oxide film, zirconium oxide film, Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide Films and neodymium oxide films may also be used. Furthermore, two or more of the above-mentioned insulating films may be stacked and used. This is also good. In particular, a silicon nitride film is formed on the resin layer 23, and silicon oxide is formed on the silicon nitride film. It is preferable to form a film.

[0207] Inorganic insulating films become denser and have higher barrier properties the higher the deposition temperature, therefore they are formed at high temperatures. It is preferable.

[0208] The substrate temperature during film formation of the insulating layer 31 is preferably between room temperature (25°C) and 350°C. A temperature of 300°C or higher is even more preferable.

[0209] Next, a transistor 40 is formed on the insulating layer 31 (Figure 5(E)).

[0210] The structure of the transistors in the display device is not particularly limited. For example, planar transistors It can be a staggered transistor, or an inverse staggered transistor. It may also be a stator. Also, either a top gate structure or a bottom gate structure transition A sta structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

[0211] Here, transistor 40 is a bottom-gate structure transistor having a metal oxide layer 44. This shows the process for fabricating a transistor. The metal oxide layer 44 is used as the semiconductor layer of the transistor 40. Metal oxides can function as oxide semiconductors.

[0212] In this embodiment, an oxide semiconductor is used for the transistor's semiconductor. Furthermore, if semiconductor materials with a wide band gap and low carrier density are used, transients This is preferable because it reduces the current when the sta is off.

[0213] The transistor 40 is formed at a temperature below the heat resistance temperature of the resin layer 23. It is preferable to form the product at a temperature lower than the heat treatment temperature.

[0214] Specifically, first, a conductive layer 41 is formed on the insulating layer 31. The conductive layer 41 is formed by depositing a conductive film. After that, a resist mask is formed, and after etching the conductive film, the resist mask is removed. It can be formed by removing.

[0215] The substrate temperature during the deposition of the conductive film is preferably between room temperature and 350°C, and preferably between room temperature and 300°C. That is even more preferable.

[0216] The conductive layers of the display device are made of aluminum, titanium, chromium, nickel, and copper, respectively. , yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, etc. Metals, or alloys primarily composed of metals, can be used in single-layer or layered structures. Alternatively, indium oxide, indium tin oxide (ITO), and tungsten-containing indium. Dium oxide, indium zinc oxide containing tungsten, indium oxide containing titanium Materials, titanium-containing ITO, indium zinc oxide, zinc oxide (ZnO), gallium-containing A light-transmitting conductive material such as ZnO or silicon-containing ITO may be used. Furthermore, polycrystalline silicon or oxide semiconductors whose resistance has been reduced by incorporating impurity elements, etc. Semiconductors such as bodies, or silicides such as nickel silicide may be used. A film containing graphene can also be used. A film containing graphene, for example, contains graphene oxide. It can be formed by reducing an impurity film. Also, oxide semiconductors containing impurity elements, etc. A semiconductor may be used. Alternatively, a conductive paste such as silver, carbon, or copper may be used. It may also be formed using conductive polymers such as polythiophene. Conductive pastes are inexpensive. Yes, and is preferable. Conductive polymers are preferable because they are easy to apply.

[0217] Next, an insulating layer 32 is formed. The insulating layer 32 is made of inorganic insulating material that can be used for the insulating layer 31. The border membrane can be used as a reference.

[0218] Next, a metal oxide layer 44 is formed. The metal oxide layer 44 is formed after the metal oxide film has been deposited. A resist mask is formed, and after etching the metal oxide film, the resist mask is removed. It can be formed by removing.

[0219] The substrate temperature during metal oxide film formation is preferably 350°C or lower, and preferably between room temperature and 200°C. More preferably, the temperature is between room temperature and 130°C.

[0220] Metal oxide films are formed using either an inert gas or oxygen gas, or both. This can be done. Furthermore, there are no particular limitations on the oxygen flow rate ratio (oxygen partial pressure) during the formation of the metal oxide film. There is no fixed rule. However, when obtaining transistors with high field-effect mobility, metal oxide The oxygen flow rate ratio (oxygen partial pressure) during film formation is preferably 0% or more and 30% or less. A percentage of % or more and 30% or less is more preferable, and a percentage of 7% or more and 15% or less is even more preferable.

[0221] The metal oxide film preferably contains at least indium or zinc. In particular, indium It is preferable that it contains um and zinc.

[0222] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that it be 3eV or more, and even more preferable that it be 3eV or more. By using metal oxides with a wide energy gap, the off-current of the transistor can be reduced. It is possible.

[0223] Metal oxide films can be formed by sputtering. Other methods include PLD (Plane-Likely Laser Drilling). Methods such as PECVD, thermal CVD, ALD, and vacuum deposition may be used.

[0224] Next, conductive layers 43a and 43b are formed. After forming a conductive film, a resist mask is formed, and after etching the conductive film, the resist mask is then applied. It can be formed by removing the mask. Conductive layer 43a and conductive layer 43b are, , it is connected to the metal oxide layer 44.

[0225] Furthermore, during the processing of conductive layer 43a and conductive layer 43b, gold not covered by the resist mask In some cases, a portion of the oxide layer 44 may be thinned by etching.

[0226] The substrate temperature during the deposition of the conductive film is preferably between room temperature and 350°C, and preferably between room temperature and 300°C. That is even more preferable.

[0227] In this way, transistor 40 can be fabricated (Figure 5(E)). In this configuration, a portion of the conductive layer 41 functions as a gate, and a portion of the insulating layer 32 functions as a gate insulating layer. The conductive layer 43a and conductive layer 43b function as either the source or the drain, respectively. It functions as one of two things.

[0228] Next, an insulating layer 33 is formed to cover the transistor 40 (Figure 6(A)). The insulating layer 33 is an insulating layer It can be formed by the same method as the marginal layer 31.

[0229] Furthermore, as the insulating layer 33, a silicon oxide film or silicon oxidnitridation film formed in an oxygen-containing atmosphere may be used. It is preferable to use an oxide insulating film such as a silicon oxide film. Furthermore, the silicon oxide film and nitrogen oxide film are preferable. Laminating an insulating film, such as a silicon nitride film, that is resistant to oxygen diffusion and permeation, onto a silicon oxide film. This is preferable. Oxide insulating films formed in an oxygen-containing atmosphere release more oxygen when heated. This allows for the creation of an insulating film that easily releases oxygen. By applying heat treatment to a layered insulating film that is difficult to diffuse and permeate, metal oxides are produced. Oxygen can be supplied to layer 44. As a result, oxygen deficiencies in the metal oxide layer 44, and This can repair defects at the interface between the metal oxide layer 44 and the insulating layer 33, and reduce the defect level. This makes it possible to create an extremely reliable display device.

[0230] Through the above process, an insulating layer 31, a transistor 40, and an insulating layer 33 are formed on the resin layer 23. This can be achieved (Figure 6(A)).

[0231] At this stage, the fabricated substrate 14 and the transistor 40 are separated using a method described later. This makes it possible to create a device that does not have a display element. For example, transistor 4 By forming 0, and in addition to transistor 40, capacitive elements, resistive elements, and wiring, Semiconductor devices can be fabricated.

[0232] Next, an insulating layer 34 is formed on the insulating layer 33 (Figure 6(A)). The insulating layer 34 is formed later. Since it is a layer having a surface on which a display element is formed, it is preferable that it functions as a planarization layer. The insulating layer 34 can utilize an organic insulating film or an inorganic insulating film that can be used in the insulating layer 31. ru.

[0233] The insulating layer 34 is formed at a temperature below the heat resistance temperature of the resin layer 23. The insulating layer 34 is subjected to heat treatment. It is preferable to form the product at a temperature lower than the specified temperature.

[0234] When an organic insulating film is used for the insulating layer 34, the temperature applied to the resin layer 23 during the formation of the insulating layer 34 is A temperature of room temperature or higher and 350°C or lower is preferred, and a temperature of room temperature or higher and 300°C or lower is more preferred.

[0235] When an inorganic insulating film is used for the insulating layer 34, the substrate temperature during film formation is preferably between room temperature and 350°C. Ideally, the temperature should be between 100°C and 300°C.

[0236] Next, openings reaching the conductive layer 43b are formed in the insulating layer 34 and the insulating layer 33.

[0237] Subsequently, a conductive layer 61 is formed. A portion of the conductive layer 61 is used as a pixel electrode for the light-emitting element 60. The conductive layer 61 forms a resist mask after the conductive film has been deposited, and the conductive film It can be formed by etching and then removing the resist mask.

[0238] The conductive layer 61 is formed at a temperature below the heat resistance temperature of the resin layer 23. The conductive layer 61 is subjected to heat treatment. It is preferable to form the product at a temperature lower than the specified temperature.

[0239] The substrate temperature during the deposition of the conductive film is preferably between room temperature and 350°C, and preferably between room temperature and 300°C. That is even more preferable.

[0240] Next, an insulating layer 35 is formed to cover the edges of the conductive layer 61. The insulating layer 35 is made of the same material used for the insulating layer 31. An organic or inorganic insulating film that can be used can be employed.

[0241] The insulating layer 35 is formed at a temperature below the heat resistance temperature of the resin layer 23. The insulating layer 35 is subjected to heat treatment. It is preferable to form the product at a temperature lower than the specified temperature.

[0242] When an organic insulating film is used for the insulating layer 35, the temperature applied to the resin layer 23 during the formation of the insulating layer 35 is A temperature of room temperature or higher and 350°C or lower is preferred, and a temperature of room temperature or higher and 300°C or lower is more preferred.

[0243] When an inorganic insulating film is used for the insulating layer 35, the substrate temperature during film formation is preferably between room temperature and 350°C. Ideally, the temperature should be between 100°C and 300°C.

[0244] Next, the EL layer 62 and the conductive layer 63 are formed. A portion of the conductive layer 63 is the light-emitting element 60. It functions as a common electrode.

[0245] The EL layer 62 can be formed by methods such as vapor deposition, coating, printing, and ejection. When creating the L layer 62 separately for each pixel, a deposition method using a shadow mask such as a metal mask is used. Alternatively, it can be formed by an inkjet method or the like. The EL layer 62 is made for each pixel. If this is not possible, a deposition method that does not use a metal mask can be used.

[0246] The EL layer 62 can use either low molecular weight compounds or high molecular weight compounds, and is inorganic. It may contain compounds.

[0247] The conductive layer 63 can be formed using methods such as vapor deposition or sputtering.

[0248] The conductive layer 63 is formed at a temperature below the heat resistance temperature of the resin layer 23 and below the heat resistance temperature of the EL layer 62. Furthermore, it is preferable to form the product at a temperature lower than the heat treatment temperature.

[0249] As described above, the light-emitting element 60 can be formed (Figure 6(A)). Light-emitting element 60 This includes a conductive layer 61 that functions as a pixel electrode, an EL layer 62, and a portion that functions as a common electrode. It has a configuration in which functional conductive layers 63 are laminated.

[0250] Here, we show an example of fabricating a top-emission type light-emitting element 60. However, the present invention is not limited to this aspect.

[0251] Light-emitting elements include top-emission type, bottom-emission type, and dual-emission type. Either method is acceptable. The electrode that extracts light uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. .

[0252] Next, an insulating layer 74 is formed by covering the conductive layer 63 (Figure 6(A)). The insulating layer 74 is made of light-emitting elements It functions as a protective layer that suppresses the diffusion of impurities such as water into the light-emitting element 60. It is sealed by an insulating layer 74. After forming the conductive layer 63, without exposure to the atmosphere, It is preferable to form a marginal layer 74.

[0253] The insulating layer 74 is formed at a temperature below the heat resistance temperature of the resin layer 23 and below the heat resistance temperature of the light-emitting element 60. The insulating layer 74 is preferably formed at a temperature lower than the heat treatment temperature.

[0254] The insulating layer 74 is, for example, a highly barrier inorganic insulating layer that can be used in the insulating layer 31 described above. It is preferable to have a configuration that includes a border film. Alternatively, an inorganic insulating film and an organic insulating film can be laminated together. It's okay to be there.

[0255] The insulating layer 74 can be formed using methods such as ALD or sputtering. ALD method Furthermore, the sputtering method is preferred because it allows for low-temperature film deposition. When using the ALD method, an insulating layer The coverage of 74 is good, which is desirable.

[0256] Next, a protective layer 75 is formed on the insulating layer 74 (Figure 6(A)). The protective layer 75 is as shown in Figure 4. As shown in (D), an adhesive layer 75b and a substrate 75a may also be used.

[0257] Next, separation starting points are formed in the resin layer 23 (Figure 6(B1), (B2)).

[0258] For example, from the protective layer 75 side, a sharp object such as a blade can be placed inside the edge of the resin layer 23. Insert 65 and make a frame-shaped cut 64.

[0259] Alternatively, the resin layer 23 may be irradiated with laser light in a frame-like pattern.

[0260] Furthermore, when forming multiple display devices on a single fabricated substrate (multi-faceted), one resin layer Using 23, multiple display devices can be formed. For example, the cut in Figure 6(B2) Multiple display devices are arranged inside the 64. This allows multiple display devices to be displayed together at once. It can be separated from the fabricated substrate.

[0261] Alternatively, multiple resin layers 23 may be used to create different resin layers 23 for each display device. 6(B3) shows an example of forming four resin layers 23 on a fabricated substrate. 3. By making a frame-shaped cut 64 in each, each display device is manufactured at a different time. It can be separated from the circuit board.

[0262] In manufacturing method example 1, the portion where the resin layer 23 is in contact with the metal oxide layer 20 and the insulating layer 31 are in contact with each other. A portion is provided. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is provided by the metal acid The adhesion (bonding) between the ionized layer 20 and the resin layer 23 is higher. Therefore, the resin layer 23 is metal This can suppress unintended peeling from the oxide layer 20. And it can form a starting point for separation. This allows the metal oxide layer 20 and the resin layer 23 to be separated at the desired timing. Therefore, the timing of separation can be controlled, and the force required for separation is small. This allows for increased yield in the separation process and the manufacturing process of the display device.

[0263] Next, the metal oxide layer 20 and the resin layer 23 are separated (Figure 7(A)).

[0264] Then, the substrate 29 is bonded to the exposed resin layer 23 using the adhesive layer 28 (Figure 7( B)).

[0265] The substrate 29 can function as a support substrate for the display device. A film is attached to the substrate 29. It is preferable to use a resin film, and it is particularly preferable to use a display device. This makes it possible to make the device lighter and thinner. Also, display devices using film substrates can be made from glass or metal. It is less prone to damage compared to using other methods. Furthermore, it can increase the flexibility of the display device. ru.

[0266] By using the peeling method of this embodiment, the transistor 40 and fabricated on the fabricated substrate 14 can be peeled off. The light-emitting element 60 and other components can be peeled off the fabricated substrate 14 and transferred to the substrate 29.

[0267] The adhesive layer 28 can be made of the same material used for the adhesive layer 75b. Material suitable for substrate 75a can be applied to 29.

[0268] Note that the resin layer 23 used in this embodiment may be colored. When the light emitted at 60 is extracted through the resin layer 23, the resin layer 23 is colored, This can result in reduced light extraction efficiency, changes in the color of the extracted light, and a decrease in display quality. This can occur. Therefore, the colored resin layer 23 is exposed due to peeling. It is preferable that this be removed later.

[0269] The resin layer 23 is produced using a wet etching apparatus, a dry etching apparatus, an ashing apparatus, etc. It can be removed by ashing using oxygen plasma. In particular, the resin layer 23 It is preferable to remove it.

[0270] In manufacturing method example 1, a metal oxide layer 20 and a resin layer 23 (or the first layer 24) are laminated, Heat treatment is performed. This improves the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. This can reduce the amount of radiation. Therefore, by irradiating the entire surface of the resin layer 23 with a laser, Furthermore, the fabricated substrate 14 and the resin layer 23 can be separated. This allows for low-cost display The device can be manufactured.

[0271] [Example of display device configuration 1] Figure 8(A) is a top view of the display device 10A. Figures 8(B) and (C) show the display, respectively. This is an example of a cross-sectional view of the display unit 381 of the device 10A and a cross-sectional view of the connection part with the FPC 372.

[0272] The display device 10A can be manufactured using the above manufacturing method example 1. Display device 10A It can be held in a bent position and be bent repeatedly.

[0273] The display device 10A has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface of the display device. This is the side. The display device 10A has a display unit 381 and a drive circuit unit 382. Display device 1 FPC372 is attached to 0A.

[0274] The conductive layer 43c and the FPC 372 are electrically connected via the connector 76 (Figure 8). B), (C)). The conductive layer 43c is made of the same material as the source and drain of the transistor. It can be formed using the same process.

[0275] The connector 76 can be any anisotropic conductive film (ACF: Anisotropic C (conductive film) and anisotropic conductive paste (ACP: Anisotropic) You can use IC Conductive Paste, etc.

[0276] The display device shown in Figure 8(C) does not have transistor 40, but does have transistor 49. In terms of the fact that it does not have a resin layer 23, and has a colored layer 97 on the insulating layer 33, Figure 8 ( This differs from the configuration in B). When using a bottom emission type light-emitting element 60, the light-emitting element 60 The colored layer 97 may be located on the substrate 29 side. If the resin layer 23 is colored, By not leaving the grease layer 23 on the display device, the display quality of the display device can be improved.

[0277] The transistor 49 shown in Figure 8(C) has the same configuration as the transistor 40 shown in Figure 8(B), in addition to the configuration of the transistor 40 shown in Figure 8(B). It has a conductive layer 45 that functions as a gate.

[0278] The transistor 49 has a configuration in which the semiconductor layer on which the channel is formed is sandwiched between two gates. This is being applied. This configuration allows for the control of the transistor's threshold voltage. This can be done by connecting two gates and supplying them with the same signal. It may drive a transistor. Such a transistor has a field effect transfer compared to other transistors. It is possible to increase the mobility and increase the on current. As a result, high-speed driving It is possible to create a circuit that can move. Furthermore, it is possible to reduce the area occupied by the circuit. This becomes possible. By applying transistors with high on-current, the display device can be made larger, and Even if the number of wires increases when the resolution is increased, the signal delay in each wire is reduced. This makes it possible to suppress display inconsistencies.

[0279] Alternatively, one of the two gates can be given a potential to control the threshold voltage, while the other is driven. By applying a potential for this purpose, the threshold voltage of the transistor can be controlled.

[0280] [Example of manufacturing method 2] First, similar to the peeling method described above, the metal oxide layer 20 to the insulating layer 31 are peeled onto the fabricated substrate 14. It forms (Figure 9(A)).

[0281] Next, a transistor 80 is formed on the insulating layer 31 (Figure 9(B)).

[0282] Here, transistor 80 is defined as a transistor having a metal oxide layer 83 and two gates. This shows how to create a T.

[0283] The transistor 80 is formed at a temperature below the heat resistance temperature of the resin layer 23. It is preferable to form it at a low temperature.

[0284] Specifically, first, a conductive layer 81 is formed on the insulating layer 31. The conductive layer 81 is formed by depositing a conductive film. After that, a resist mask is formed, and after etching the conductive film, the resist mask is removed. It can be formed by removing.

[0285] Next, an insulating layer 82 is formed. The insulating layer 82 is an inorganic insulating layer that can be used for the insulating layer 31. The border membrane can be used as a reference.

[0286] Next, a metal oxide layer 83 is formed. The metal oxide layer 83 is formed after the metal oxide film has been deposited. A resist mask is formed, and after etching the metal oxide film, the resist mask is removed. It can be formed by removing. The metal oxide layer 83 can be used for the metal oxide layer 44. Materials can be used.

[0287] Next, an insulating layer 84 and a conductive layer 85 are formed. The insulating layer 84 is used for the insulating layer 31. An inorganic insulating film that can do this can be used. The insulating layer 84 and the conductive layer 85 are insulating layers that make up the insulating layer 84 After forming the film and the conductive film that will become the conductive layer 85, a resist mask is formed, and the insulating film and The conductive film can be formed by etching it and then removing the resist mask.

[0288] Next, an insulating layer 33 is formed to cover the metal oxide layer 83, the insulating layer 84, and the conductive layer 85. The edge layer 33 can be formed by the same method as the insulating layer 31.

[0289] The insulating layer 33 preferably contains hydrogen. The hydrogen contained in the insulating layer 33 and It diffuses into the contacting metal oxide layer 83, and a portion of the metal oxide layer 83 becomes less resistive. Because a portion of layer 83 functions as a low-resistance region, the on-current of transistor 80 increases and It is possible to improve the field effect mobility.

[0290] Next, an opening is formed in the insulating layer 33 that reaches the metal oxide layer 83.

[0291] Next, conductive layers 86a and 86b are formed. After forming a conductive film, a resist mask is formed, and after etching the conductive film, the resist mask is then applied. It can be formed by removing the tomask. Conductive layer 86a and conductive layer 86b are, The insulating layer 33 is electrically connected to the metal oxide layer 83 through an opening in the insulating layer 33.

[0292] In this way, transistor 80 can be fabricated (Figure 9(B)). In this configuration, a portion of the conductive layer 81 functions as a gate, and a portion of the insulating layer 84 functions as a gate insulating layer. It functions as such, with a portion of the insulating layer 82 acting as a gate insulating layer, and a portion of the conductive layer 85 acting as a gate and It functions as follows. The metal oxide layer 83 has a channel region and a low-resistance region. Channel region It overlaps with the conductive layer 85 via the insulating layer 84. The low-resistance region is the part connected to the conductive layer 86a. It has a portion that is connected to the conductive layer 86b.

[0293] Next, the insulating layer 34 to the light-emitting element 60 is formed on the insulating layer 33 (Figure 9(C)). These steps can be found in Example 1 of the manufacturing method.

[0294] In addition, the processes shown in Figures 10(A) to (C) are carried out independently of the processes shown in Figures 9(A) to (C). First, in the same process as forming the metal oxide layer 20 on the fabricated substrate 14, on the fabricated substrate 91 Next, a metal oxide layer 92 is formed (Figure 10(A)). Then, a resin layer 2 is placed on the metal oxide layer 20. Similar to the process of forming 3, a first layer is formed on the metal oxide layer 92 and then heat-treated. Then, a resin layer 93 is formed (Figure 10(B)). Then, an insulating layer 31 is formed on the resin layer 23. Similarly to the process described above, an insulating layer 95 is formed on the resin layer 93 to cover the edges of the resin layer 93. Figure 10(B)).

[0295] Next, a colored layer 97 and a light-shielding layer 98 are formed on the insulating layer 95 (Figure 10(C)).

[0296] A color filter or the like can be used as the colored layer 97. Position it so that it overlaps with the display area.

[0297] A black matrix or the like can be used as the light-shielding layer 98. The light-shielding layer 98 is an insulating layer Position it so that it overlaps with 35.

[0298] Next, the surface of the fabricated substrate 14 on which the transistors 80 etc. are formed, and the resin layer of the fabricated substrate 91. The surface on which 93 etc. is formed is bonded together using the adhesive layer 99 (Figure 10(D)).

[0299] Next, a separation starting point is formed in the resin layer 23 (Figure 11(A), (B)). The fabricated substrate 14 and fabricated The fabricated substrate 91 can be separated in either order. Here, the fabricated substrate 91 can be separated in any order. Here is an example of separating 14.

[0300] For example, a laser beam 66 is irradiated onto the resin layer 23 in a frame shape from the fabricated substrate 14 side (Figure 11( (See laser beam irradiation area 67 shown in B). Glass, etc. on fabricated substrates 14 and 91. This is suitable when using a hard substrate.

[0301] There are no particular limitations on the laser used to form the starting point for separation. For example, a continuous-wave type laser Lasers and pulsed lasers can be used. Laser light irradiation conditions (frequency, power) (Density, energy density, beam profile, etc.) are affected by the thickness of the fabricated substrate and resin layer, the material, etc. This should be taken into consideration and controlled accordingly.

[0302] In manufacturing method example 2, the portion where the resin layer 23 is in contact with the metal oxide layer 20 and the insulating layer 31 are in contact with each other. A portion is provided. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is provided by the metal acid The adhesion (bonding) between the ionized layer 20 and the resin layer 23 is higher. Therefore, the resin layer 23 is metal This prevents unintended peeling from the oxide layer 20. Similarly, on the metal oxide layer 92 A portion where the resin layer 93 is in contact and a portion where the insulating layer 95 is in contact are provided. The adhesion (bonding) between the insulating layer 95 and the metal oxide layer 92 and the resin layer 93 is the same as the adhesion (bonding) between the metal oxide layer 92 and the resin layer 93. It is higher than the resin layer 93. Therefore, the resin layer 93 may unintentionally peel off from the metal oxide layer 92. It can be suppressed.

[0303] Then, a separation starting point is formed in only one of the resin layer 23 or resin layer 93. Because the timing of forming the separation starting point can be changed with the resin layer 93, the fabricated substrate 14 and the fabricated substrate 91 can be separated in separate processes. This allows for separation in the separation process. Furthermore, it is possible to improve the yield in the manufacturing process of the display device.

[0304] The laser beam 66 does not need to irradiate the entire surface of the resin layer 23, but only partially. Therefore, expensive laser equipment with high running costs is unnecessary.

[0305] Next, the fabricated substrate 14 and the transistor 80 are separated (Figure 12(A)). Here, the frame-shaped The inner part of the laser beam 66 irradiated (within the laser beam irradiation area 67 shown in Figure 11(B)) This can also be called the side part.) An example of separating the fabricated substrate 14 is shown. Also, Figure 12(A) In the outer portion where the laser beam 66 is irradiated in a frame shape, separation occurs in the adhesive layer 99. The following is an example of cohesive failure of the adhesive layer 99, but it is not limited to this. For example, outside the irradiation area 67 On the other side, separation occurs between the adhesive layer 99 and the insulating layer 95 or insulating layer 33 (interfacial fracture). (Or, it may be said that adhesive failure occurs.)

[0306] In manufacturing method example 2, a metal oxide layer 20 and a resin layer 23 (or the first layer 24) are laminated. Heat treatment is performed. This improves the adhesion or bonding between the metal oxide layer 20 and the resin layer 23. This can reduce the amount of radiation. Therefore, by irradiating the entire surface of the resin layer 23 with a laser, Furthermore, the fabricated substrate 14 and the resin layer 23 can be separated. This allows for low-cost display The device can be manufactured.

[0307] Next, the resin layer 23, which was exposed by separating it from the fabricated substrate 14, and the substrate 29 are bonded together by the adhesive layer 2 The parts are bonded together using part 8 (Figure 12(B)). Substrate 29 functions as a support substrate for the display device. It is possible.

[0308] Next, a separation starting point is formed in the resin layer 93 (Figure 13(A)).

[0309] In Figure 13(A), a sharp object such as a blade is found inside the edge of the resin layer 93, from the substrate 29 side. Insert the shaped instrument 65 and make a frame-shaped cut. This is suitable when resin is used for the substrate 29. be.

[0310] Alternatively, similar to when a separation starting point is formed in the resin layer 23, the resin layer 9 is formed from the fabricated substrate 91 side. In step 3, the laser beam may be irradiated in a frame-like manner.

[0311] By forming a separation point, the fabricated substrate 91 and the resin layer 93 are separated at the desired timing. Therefore, the timing of separation can be controlled, and the force required for separation can be controlled. It is small. This can improve the yield in the separation process and the manufacturing process of the display device. ru.

[0312] Next, the fabricated substrate 91 and the transistor 80 are separated (Figure 13(B)). Here, the frame-shaped This shows an example of separating the inner part with a cut from the fabricated substrate 91.

[0313] In manufacturing method example 2, the metal oxide layer 92 and the resin layer 93 (or the first layer) are laminated and heated. The process is performed. This reduces the adhesion or bonding between the metal oxide layer 92 and the resin layer 93. It can be lowered. Therefore, without irradiating the entire surface of the resin layer 93 with a laser, The fabricated substrate 91 and the resin layer 93 can be separated. This allows for the low cost of producing a display device. It is possible to produce this.

[0314] Next, the resin layer 93, which was exposed by separating it from the fabricated substrate 91, and the substrate 22 are bonded together by the adhesive layer 1 The parts are bonded together using part 3 (Figure 14(A)). Substrate 22 functions as a support substrate for the display device. It is possible.

[0315] In Figure 14(A), the light emission of the light-emitting element 60 is due to the colored layer 97, the insulating layer 95, and the resin layer 9 Through 3, it is taken out to the outside of the display device. Therefore, the visible light transmittance of the resin layer 93 A higher value is preferable. In one aspect of the present invention, the thickness of the resin layer 93 can be reduced. Therefore, the visible light transmittance of the resin layer 93 is increased, and the light extraction efficiency of the light-emitting element 60 is reduced. It can be suppressed.

[0316] The resin layer 93 may be removed. This further improves the light extraction efficiency of the light-emitting element 60. This can be done. In Figure 14(B), the resin layer 93 is removed and the insulating layer 9 is applied using the adhesive layer 13. An example of attaching the substrate 22 to 5 is shown.

[0317] The adhesive layer 13 can be made from the same material used for the adhesive layer 75b.

[0318] The substrate 22 can be made of the same material that can be used for the substrate 75a.

[0319] Example 2 of the manufacturing method is an example in which a display device is manufactured by performing the peeling method according to one embodiment of the present invention twice. In one aspect of the present invention, all functional elements constituting the display device are formed on the fabricated substrate. Even when manufacturing high-resolution display devices, flexible substrates have high position No precision is required for alignment. Therefore, a flexible substrate can be easily attached. ru.

[0320] [Differentiation] In manufacturing method example 2 (Figure 10(D)), the adhesive layer 99 is formed between the metal oxide layer 20 and the insulating layer 31. Overlapping with both the contact area and the area where the metal oxide layer 92 and the insulating layer 95 are in contact. The cases in which it is provided are shown.

[0321] Adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31, and between the metal oxide layer 92 and the insulating layer 95 The adhesion (bonding) is the adhesion (bonding) between the metal oxide layer 20 and the resin layer 23, respectively. Furthermore, it is higher than the adhesion (bonding) between the metal oxide layer 92 and the resin layer 93.

[0322] Delamination occurs at the interface between the metal oxide layer 20 and the insulating layer 31, or at the interface between the metal oxide layer 92 and the insulating layer 95. Performing this procedure can lead to poor peeling and a decrease in peeling yield. Therefore, After forming a frame-like separation point in the oil layer, the process involves separating only the portion that overlaps with the resin layer from the fabricated substrate. The degree is preferable.

[0323] On the other hand, as shown in Figures 15(A) and (B), the adhesive layer 99 is connected to the metal oxide layer 20 and the insulating layer 3 The parts in contact with 1 and the parts in contact with the metal oxide layer 92 and the insulating layer 95 are not overlapped. It can be configured without this.

[0324] For example, if a low-flow adhesive or adhesive sheet is used for the adhesive layer 99, the adhesive layer 9 It is easy to form 9 in an island-like manner (Figure 15(A)).

[0325] Alternatively, a frame-shaped partition wall 96 is formed, and an adhesive layer 99 is filled inside the partition wall 96 and cured. This is also acceptable (Figure 15(B)).

[0326] When the partition wall 96 is used as a component of the display device, a hardened resin is used for the partition wall 96. This is preferable. In this case, the partition wall 96 also has the metal oxide layer 20 and the insulating layer 31 in contact. It is preferable that the parts and the parts where the metal oxide layer 92 and the insulating layer 95 are in contact are not overlapped. stomach.

[0327] If the partition wall 96 is not used as a component of the display device, the partition wall 96 may be uncured or semi-cured. It is preferable to use a resin. In this case, the partition wall 96 is made of a metal oxide layer 20 and an insulating layer 31. The portion in contact with the metal oxide layer 92 and the insulating layer 95, or You can overlap both.

[0328] In this embodiment, an uncured resin is used for the partition wall 96, and the partition wall 96 is isolated from the metal oxide layer 20. The portion in contact with the edge layer 31, and the portion in contact with the metal oxide layer 92 and the insulating layer 95 Here are some examples of non-overlapping examples.

[0329] The adhesive layer 99 is in contact with the metal oxide layer 20 and the insulating layer 31, and the metal oxide layer 9 Regarding the method for forming the starting point of separation in a configuration that does not overlap with the portion where 2 and the insulating layer 95 are in contact, Let me explain. Below, I will show an example of peeling off the fabricated substrate 91. The same method can be used in combination.

[0330] Figures 16(A) to (E) show the laser beam 66 when separating the fabricated substrate 91 and the resin layer 93. The irradiation position will be explained.

[0331] As shown in Figure 16(A), at least one location in the region where the resin layer 93 and the adhesive layer 99 overlap. By irradiating it with laser light 66, a starting point for separation can be formed.

[0332] Since it is preferable that the force separating the fabricated substrate 91 and the resin layer 93 is concentrated at the starting point of separation, It is preferable to form the point of separation near the edge rather than in the center of the adhesive layer 99. In particular, the edge Within the vicinity, it is preferable to form the starting point of separation near the corners rather than near the edges.

[0333] Figures 16(B) to (E) show examples of the laser beam irradiation area 67.

[0334] Figure 16(B) shows a laser beam irradiation area 67 at one corner of the adhesive layer 99.

[0335] By continuously or intermittently irradiating with laser light, the starting point of separation in the form of a solid line or dashed line is determined. This can be formed. In Figure 16(C), laser light is shone at three locations on the corners of the adhesive layer 99. The irradiation area 67 is shown. In Figure 16(D), the irradiation area 67 of the laser light is on one side of the adhesive layer 99. This shows an example where the layers are in contact and extend along one side of the adhesive layer 99. As shown in Figure 16(E), The laser beam irradiation area 67 is not only the area where the adhesive layer 99 and the resin layer 93 overlap, but also the cured area It may be located in the region where the non-conforming partition wall 96 and the resin layer 93 overlap.

[0336] Subsequently, the fabricated substrate 91 and the resin layer 93 can be separated. A portion of the partition wall 96 may remain. The partition wall 96 may be removed, or it may not be removed and the next You may proceed to the next step.

[0337] [Example of display device configuration 2] Figure 17(A) is a top view of the display device 10B. Figure 17(B) is a top view of the display device 10B. This is an example of a cross-sectional view of part 381 and a cross-sectional view of the connection part with FPC372.

[0338] The display device 10B can be manufactured using the above example manufacturing method 2. It can be held in a bent position and be bent repeatedly.

[0339] The display device 10B has a substrate 22 and a substrate 29. The substrate 22 side is the display of the display device 10B. This is the front side. The display device 10B has a display unit 381 and a drive circuit unit 382. FPC372 is attached to 10B.

[0340] It is preferable to use a film for substrates 22 and 29, and in particular to use a resin film. This is preferable. This makes it possible to make the display device lighter and thinner. Also, the film base Display devices using plates are less prone to breakage compared to those using glass or metal. Also, This can increase the flexibility of the display device.

[0341] The conductive layer 86c and the FPC 372 are electrically connected via the connector 76 (Figure 17). (B)). The conductive layer 86c is made of the same material as the source and drain of the transistor and the same material as the source and drain. It can be formed in the process.

[0342] [Example of a laminate fabrication apparatus] Next, an example of a laminate fabrication apparatus will be explained using Figure 18. Fabrication of the laminate shown in Figure 18 The apparatus removes the layer to be peeled from the fabricated substrate using the peeling method of this embodiment, and separates the layer to be peeled. It can be transferred to the substrate. Using the laminate fabrication apparatus shown in Figure 18, semiconductor device, A laminated structure, such as a display device, can be manufactured.

[0343] The laminate manufacturing apparatus shown in Figure 18 has multiple conveyor rollers (conveyor rollers 643, 644, 64 5th grade), tape reel 602, take-up reel 683, direction change roller 604, and pressing It has a roller 606.

[0344] The tape reel 602 can unwind a roll-sheet-shaped support 601. It is preferable that the speed at which 601 is dispensed is variable. For example, it is preferable to make the speed relatively slow. This makes it possible to suppress delamination defects in the laminate or the occurrence of cracks in the delaminated components.

[0345] The winding reel 683 can wind up the laminate 59.

[0346] By using the tape reel 602 and the take-up reel 683, tension is applied to the support 601. It is possible.

[0347] The support 601 is fed out continuously or intermittently. The support 601 is fed out continuously. This is preferable because it allows for peeling at a uniform speed and with uniform force. Preferably, the peeling process proceeds continuously without stopping midway, and the peeling process proceeds at a constant speed. It is more preferable to do so. If the peeling process is stopped midway and then started again from that area, Unlike when delamination progresses continuously, strain or other stresses are applied to the area in question. Therefore, the area in question Changes in the microstructure or changes in the properties of electronic devices in that region occur, for example, display In devices and other equipment, this effect may manifest in the display.

[0348] The support 601 is a roll sheet made of organic resin, metal, alloy, or glass, etc. Film can be used.

[0349] Figure 18 shows a flexible substrate and other fabrication equipment (e.g., flexible device) on the support 601. The support 601 is made of a carrier tape and other components. However, it may also be a component that does not constitute the device being manufactured.

[0350] Multiple conveyor rollers can convey the laminate 56. A conveyor that conveys the laminate 56. The structure is not limited to conveying rollers; a belt conveyor or a conveying robot may also be used. Alternatively, the laminated body 56 may be placed on a stage on the transport mechanism.

[0351] The conveyor rollers 643, 644, or 645 are arranged in a group. One of the feed rollers, provided at predetermined intervals, and the laminate 56 (or one of the surface layers 56b) It is driven to rotate in the direction of discharge (the direction of right rotation indicated by the solid arrow). Multiple conveyors are lined up. Each roller is driven to rotate by a drive unit (motor, etc.) not shown in the diagram.

[0352] The direction-changing roller 604 allows the feeding direction of the support 601 to be changed. Figure 18 The direction-changing roller 604 is located between the tape reel 602 and the pressure roller 606. Here is an example.

[0353] The support 601 is pressed by the pressing roller 606 and the conveying roller 645, forming the laminate 56 (the remainder 5 It will be pasted onto 6a).

[0354] In the configuration shown in Figure 18, the support 601 comes into contact with the laminate 56 just before it reaches the pressing roller 606. This can suppress the formation of air bubbles between the support 601 and the laminate 56. This can suppress it.

[0355] The pressure roller 606 is rotationally driven by a drive unit (motor, etc.) not shown. As 606 rotates, a force is applied to the laminate 56 that peels away the remaining portion 56a, and the remaining portion 56a It peels off. At this time, it is preferable that a starting point for peeling is formed in the laminate 56. Remaining part 56a begins to peel off from the starting point of delamination. Then, the laminate 56 is separated from the remaining 56a and one side It is separated into layer 56b.

[0356] The mechanism for separating the remaining portion 56a from the laminate 56 is not limited to the pressing roller 606, but also includes a convex surface (convex Structures having curved surfaces (or convex curved surfaces) can be applied. For example, cylindrical Using structures such as cylindrical, right circular, elliptical, parabolic, or spherical shapes. This is possible. For example, rollers such as drum-shaped rollers can be used. As an example, a column whose base is curved (unlike a cylinder with a circular base or a column with an elliptical base) Columns such as elliptical columns, or columns whose bases are composed of straight and curved lines (columns with semicircular and semielliptical bases) Examples include the following. When the shape of the structure is one of these columns, the convex surface is the column. It corresponds to the curved parts of the body.

[0357] The structural material can be metal, alloy, organic resin, rubber, etc. The structure has a hollow interior. It may have gaps or cavities. Examples of rubber include natural rubber, urethane rubber, and nitrile rubber. Examples include neoprene rubber. When rubber is used, static electricity can be generated due to friction or peeling. It is preferable to use materials that are less prone to static electricity, or to take measures to prevent static electricity. For example, Figure The pressure roller 606 shown in 18 is a hollow cylinder 606a made of rubber or organic resin, and a circle The device comprises a cylinder 606b made of metal or an alloy, located inside the tube 606a.

[0358] The rotational speed of the pressure roller 606 is preferably variable. By controlling this, the yield of peeling can be further improved.

[0359] The pressing roller 606 and the multiple conveying rollers move in at least one direction (for example, up and down, left and right, and It may be movable (forward and backward, etc.). The convex surface of the pressing roller 606 and the support surface of the conveying roller A variable distance between layers is preferable because it allows for the delamination of laminates of various thicknesses.

[0360] There is no particular limit to the angle at which the pressing roller 606 folds back the support 601. In Figure 18, the pressing roller - An example is shown where the angle at which layer 606 folds back support 601 is obtuse.

[0361] The laminate manufacturing apparatus shown in Figure 18 further includes a roller 617. The roller 617 is convex The support 601 can be fed along the surface from the pressure roller 606 to the winding reel 683. Cut.

[0362] The roller 617 is movable in one or more directions.

[0363] As the axis of the roller 617 moves, the roller 617 applies tension to the support 601. This is possible. In other words, roller 617 can be called a tension roller. Specifically, The support 601 can be pulled in the feed direction changed by the pressing roller 606. ru.

[0364] As the axis of roller 617 moves, roller 617 presses against support 601 The angle at which it folds can be controlled.

[0365] The roller 617 can fold back the support 601 and change the feeding direction of the support 601. For example, the feeding direction of the support 601 may be changed to the horizontal direction. Alternatively, the roller 617 However, after folding the support 601 and changing the feeding direction of the support 601, it is wound with the roller 617. The direction-changing roller 607 located between the take-off reels 683 further controls the support 601 The feeding direction may be changed, and the feeding direction of the support 601 may be set to the horizontal direction.

[0366] The laminate manufacturing apparatus shown in Figure 18 further includes guide rollers (guide rollers 631, 632 , 633 etc.), winding reel 613, liquid supply mechanism 659, drying mechanism 614, and, It has an ionizer (ionizers 639, 620).

[0367] The laminate fabrication apparatus uses guide rollers to guide the support 601 to the winding reel 683. It may have one. The guide roller may be singular or plural. Guide roller 6 As shown in 32, the guide roller may also be able to apply tension to the support 601.

[0368] Tape 600 (also called a separator film) is attached to at least one side of the support 601. They may be bonded together. In this case, the laminate manufacturing apparatus attaches to one side of the support 601. It is preferable to have a reel capable of winding up the combined tape 600. In Figure 18, the take-up reel 613 is positioned between the tape reel 602 and the pressure roller 606. An example of placement is shown. Furthermore, the laminate manufacturing apparatus may have a guide roller 634. The guide roller 634 can guide the tape 600 to the take-up reel 613. ru.

[0369] The apparatus for manufacturing the laminate may have a drying mechanism 614. Functional elements contained in the remainder 56a Because the components (for example, transistors and thin-film integrated circuits) are susceptible to static electricity, remove the remaining 5 before peeling. A liquid is supplied to the interface between 6a and one of the surface layers 56b, or the liquid is supplied to the interface while peeling is performed. It is preferable to do this. Also, the presence of liquid in the area where the peeling is progressing reduces the force required for peeling. It can be lowered. Using the liquid supply mechanism 659, the peeling can be performed while supplying liquid to the interface. It can be separated. If the liquid evaporates while still adhering to the remaining 56a, a watermark will be left. Because it may form, it is preferable to remove the liquid immediately after peeling. The remaining portion 56a, including the energy element, is blown to remove any remaining droplets on the remaining portion 56a. This is preferable. This can suppress the occurrence of watermarks. Also, support A carrier plate 609 may be provided to prevent the body 601 from bending.

[0370] While transporting the support 601 in an oblique direction with respect to the horizontal plane, downward along the inclination of the support 601 It is preferable to direct the airflow in the direction that causes the liquid droplets to fall downwards.

[0371] The transport direction of the support 601 can be perpendicular to the horizontal plane, but relative to the horizontal plane A diagonal orientation stabilizes the support 601 during transport, thereby suppressing vibrations.

[0372] At locations where static electricity may be generated during the process, the electrostatic discharger of the laminate manufacturing equipment is used. It is preferable to use a [specific type of] static electricity remover. There are no particular limitations on the static electricity remover, but for example, a corona discharge [specific type of] Ionizers such as electric, soft X-ray, and ultraviolet ionizers can be used.

[0373] For example, an ionizer is installed in the laminate manufacturing apparatus, and air or nitrogen gas is supplied from the ionizer. The remaining portion 56a is sprayed to perform static electricity removal, thereby reducing the effect of static electricity on the functional elements. This is preferable. In particular, in the steps of bonding two members together and separating one member, In each case, it is preferable to use an ionizer.

[0374] For example, using the ionizer 639, ions are brought near the interface between the remaining portion 56a and one of the surface layers 56b. By irradiating the laminate 56 and removing static electricity, the laminate 56 is separated into the remaining portion 56a and one of the surface layers 56b. It is preferable to do so.

[0375] The laminate fabrication apparatus includes a substrate load cassette 641 and a substrate unload cassette 642. It is also possible to do so. For example, the laminate 56 can be supplied to the substrate load cassette 641. The substrate load cassette 641 can supply the laminate 56 to the transport mechanism, etc. Furthermore, one of the surface layers 56b can be supplied to the substrate unload cassette 642.

[0376] In the laminate fabrication apparatus shown in Figure 18, a support 601 is attached to the laminate 56, and the support 60 By pulling 1, the remaining portion 56a is peeled off from the laminate 56. Using the support 601, Body 56 can be automatically separated, reducing working time and improving product manufacturing yield. It can be done.

[0377] The remaining portion 56a, separated from the surface layer 56b, is bonded to the support 671 using an adhesive. This results in the support 601, the remaining portion 56a, and the support 671 being stacked in this order. A laminate 59 can be fabricated.

[0378] The tape reel 672 can unwind a roll-sheet-shaped support 671. The same material as that used for support 601 can be used for 671.

[0379] By using the tape reel 672 and the take-up reel 683, tension is applied to the support 671. It is possible.

[0380] The laminate fabrication apparatus includes a guide roller 6 that guides the support 671 to the winding reel 683. It may have 77, 678, and 679.

[0381] The direction-changing roller 676 allows the feeding direction of the support 671 to be changed.

[0382] The pressing roller 675 applies pressure to the remaining portion 56a and the support 671 that is unwound by the tape reel 672. They can be bonded together while doing so. This prevents air bubbles from forming between the support 671 and the remaining part 56a. This can prevent contamination.

[0383] The separation tape 670 may be attached to at least one surface of the support 671. Roller 673 can wind up the separation tape 670. Guide roller 674 separates Tape 670 can be guided up to reel 673.

[0384] The fabricated laminate 59 may be wound up or cut into sections. In Figure 18, it is wound up. This shows an example of the take-off reel 683 winding up the laminate 59. Guide rollers 665 and 666 are shown. It may also have guide rollers that guide the laminate 59 onto the winding reel 683.

[0385] In the laminate manufacturing apparatus shown in Figure 18, the pressing roller 606 is used to remove the remaining 5 from the laminate 56. 6a can be peeled off, and the remaining portion 56a can be transferred to the support 671 using the pressing roller 675. Cut.

[0386] As described above, in the peeling method of this embodiment, a metal oxide layer and a resin layer are placed on the fabricated substrate. The resin layer is laminated, and the peelability of the resin layer from the metal oxide layer is controlled by heating. Linear laser beam Because it does not require expensive equipment such as irradiation, it is low-cost. By providing a portion where the resin layer is in contact with the oxide layer and a portion where the insulating layer is in contact, the desired tie The resin layer can be peeled off the fabricated substrate by the munging process. Therefore, the peeling method of this embodiment Using this separation method, display devices and the like can be manufactured at low cost and with high mass production capability.

[0387] This embodiment can be appropriately combined with other embodiments. Furthermore, this specification Furthermore, if multiple configuration examples are shown within a single embodiment, the configuration examples may be combined as appropriate. It is possible to do so.

[0388] (Embodiment 2) In this embodiment, Figures 19 to 23 are used to describe the method for manufacturing a display device according to one aspect of the present invention. I will explain.

[0389] In this embodiment, low-temperature polysilicon (LTPS) is used in the channel formation region of the transistor. This section explains when to use this method.

[0390] When using LTPS, it is preferable to form the resin layer using a material with high heat resistance. Furthermore, it is preferable to form the resin layer as a thick film. This enables high-temperature processing. Furthermore, it can mitigate damage during the laser crystallization process.

[0391] First, a metal oxide layer 20 is formed on the fabricated substrate 14 (Figure 19(A)). For the 20 materials and forming methods, refer to Embodiment 1.

[0392] Next, a first layer 24 is formed on the metal oxide layer 20 (Figure 19(B)).

[0393] The material and method of forming the first layer 24 can be found in Embodiment 1. It is preferable that the heat resistance of the material of the first layer 24 used in this configuration is sufficiently high.

[0394] Next, the first layer 24 of the desired shape is subjected to a heat treatment to form the resin layer 23. (Figure 19(C)). Here, island-shaped resin layers 23 are formed.

[0395] The conditions for the heat treatment can be found in Embodiment 1.

[0396] In this embodiment, a material with high heat resistance is used for the material of the first layer 24, therefore, high heat resistance A resin layer 23 can be formed.

[0397] In this embodiment, a material with high heat resistance is used for the material of the first layer 24, therefore, Embodiment 1 The heat treatment can be performed at a temperature higher than the heating temperature shown. For example, the heat treatment The temperature is preferably between 400°C and 600°C, and more preferably between 450°C and 550°C. stomach.

[0398] The thickness of the resin layer 23 is preferably 10 μm or more and 200 μm or less, and 10 μm or more. It is more preferable that the particle size is 100 μm or less, and even more preferable that it is between 10 μm and 50 μm. This is preferable. The resin layer 23 is sufficiently thick, which mitigates damage during the laser crystallization process. This can be done. Furthermore, it can increase the rigidity of the display device.

[0399] The temperature at which the resin layer 23 loses 5% of its weight is preferably between 400°C and 600°C, and above 450°C. A temperature of 600°C or less is more preferable, and a temperature of 500°C or more and 600°C or less is even more preferable.

[0400] Next, an insulating layer 31 is formed on the fabricated substrate 14 and the resin layer 23 (Figure 19(D)).

[0401] The insulating layer 31 is formed at a temperature below the heat resistance temperature of the resin layer 23. It is preferable to form the product at a temperature lower than the specified temperature.

[0402] The insulating layer 31 prevents impurities contained in the resin layer 23 from forming transistors and display elements later. It can be used as a barrier layer to prevent diffusion. For example, the insulating layer 31 is a resin layer When 23 is heated, moisture and other substances contained in the resin layer 23 diffuse into the transistors and display elements. It is preferable to prevent this from happening. Therefore, it is preferable that the insulating layer 31 has high barrier properties.

[0403] The insulating layer 31 can be made from the material exemplified in Embodiment 1.

[0404] Next, transistors 140 are formed on the insulating layer 31 (Figures 19(E), 20(A)~ Figure 20(E)).

[0405] Here, transistor 140 has LTPS in the channel formation region, and is a top-gear transistor. This shows how to fabricate a transistor with a T-structure.

[0406] First, a semiconductor film is formed on the insulating layer 31 using a sputtering method or a CVD method. In this embodiment, a plasma CVD apparatus is used to create an amorphous silicon layer with a thickness of 50 nm. A film 161 is formed.

[0407] Next, it is preferable to heat-treat the amorphous silicon film 161. This allows the non Hydrogen can be removed from the crystalline silicon film 161. Specifically, at temperatures above 400°C. It is preferable to heat at a temperature of 550°C or lower. For example, the amorphous silicon film 161 contains By keeping the hydrogen content below 5 atom%, the manufacturing yield in the crystallization process can be improved. Yes, it is possible. Furthermore, if the hydrogen content of the amorphous silicon film 161 is low, the heat treatment can be omitted. good.

[0408] In this embodiment, because the resin layer 23 has high heat resistance, the amorphous silicon film 161 is heated at a high temperature. It can be heated. This allows for sufficient desorption of hydrogen from the amorphous silicon film 161. This can improve the manufacturing yield in the crystallization process.

[0409] Next, the semiconductor film is crystallized to form a semiconductor film 162 having a crystalline structure (Figure 20(A)).

[0410] By irradiating a semiconductor film with laser light from above, the semiconductor film can be crystallized. For example, the light waves are 193nm, 248nm, 308nm, or 351nm. A long length can be used. Alternatively, a semiconductor film can be crystallized using a metallic catalyst element. good.

[0411] In this embodiment, the resin layer 23 has high heat resistance and the resin layer 23 is formed as a thick film, It can mitigate damage during crystallization.

[0412] Next, channel doping may be performed on the semiconductor film 162 having a crystalline structure.

[0413] Next, the semiconductor film 162 having a crystalline structure is processed to form island-shaped semiconductor films.

[0414] The semiconductor film can be processed using either the wet etching method or the dry etching method. Either one or both can be used.

[0415] Next, an insulating layer 163 and a conductive layer 164 are formed on the insulating layer 31 and the semiconductor film. 63 can utilize an inorganic insulating film that can be used for the insulating layer 31. Insulating layer 163 and conductor The conductive layer 164 is formed by depositing an insulating film that will become the insulating layer 163 and a conductive film that will become the conductive layer 164. A mask is formed, and after etching the insulating film and the conductive film, the mask is removed. It can be formed by [this].

[0416] By adding impurity elements to a portion of the semiconductor film, the channel region 162a and the low-resistance region 1 Forms 62b (which can also be called the source region and drain region). Multiple impurity elements are added. By doing so (light doping and heavy doping), the channel region 162a and the low-resistance region are separated. It is also possible to form an LDD (Lightly Doped Drain) region between 162b. i. The insulating layer 163 and the conductive layer 164, and the mask used to produce them, It can function as a mask when adding impurity elements.

[0417] When fabricating an n-channel transistor, the impurity elements used in the semiconductor film are n-type conductive elements. Impurities that impart electrical properties are used. For example, elements such as P, As, Sb, S, Te, and Se are used. It is possible to be there.

[0418] When fabricating a p-channel transistor, the impurity elements used in the semiconductor film are p-type conductive elements. Impurities that impart electrical properties are used. For example, elements such as B, Al, and Ga can be used. .

[0419] Next, an insulating layer 165 is formed to cover the semiconductor layer, insulating layer 163, and conductive layer 164 (Figure 2). 0(C)). The insulating layer 165 can be formed in the same manner as the insulating layer 31.

[0420] Next, a heat treatment is performed. This activates the impurities added to the semiconductor film. The heat treatment is preferably performed after the insulating layer 165 is formed in order to prevent oxidation of the conductive layer 164. It's nice.

[0421] In this embodiment, because the resin layer 23 has high heat resistance, a heat treatment for activating impurities is performed. This can be done at high temperatures, which improves the characteristics of the transistor.

[0422] Next, an insulating layer 166 is formed on the insulating layer 165 (Figure 20(D)). The insulating layer 166 is an insulating layer It can be formed by the same method as the marginal layer 31, and in particular, an insulating film containing hydrogen can be formed.

[0423] Next, a heat treatment is performed. This causes hydrogen to be released from the insulating layer 166 into the semiconductor film (especially the char By supplying hydrogen to the Nell region (162a), defects in the semiconductor film can be terminated with hydrogen. The heat treatment is preferably performed after forming an insulating layer 166 containing hydrogen. The heat treatment was performed on the amorphous silicon film 161 to remove hydrogen. This should also be done at a low temperature.

[0424] In this embodiment, because the resin layer 23 has high heat resistance, the heat treatment for hydrogenation is performed at a high temperature. This allows us to improve the characteristics of the transistor.

[0425] Next, openings are made in the insulating layer 165 and insulating layer 166 that reach the low-resistance region 162b of the semiconductor layer. To form.

[0426] Next, conductive layers 167a and 167b are formed. 7b is formed after depositing a conductive film, then a resist mask is formed, and the conductive film is etched. The conductive layer 167a and conductive layer 167b can be formed by removing the resist mask. These allow the low-resistance region 162b and the electrical components to interact through openings in the insulating layer 165 and insulating layer 166, respectively. It connects to the target.

[0427] In this way, transistor 140 can be fabricated (Figure 20(E)). Transistor 1 In 40, a portion of the conductive layer 164 functions as a gate, and a portion of the insulating layer 163 functions as a gate. It functions as an insulating layer. The semiconductor layer has a channel region 162a and a low-resistance region 162b. The channel region 162a overlaps with the conductive layer 164 via the insulating layer 163. Low resistance region 1 62b has a portion connected to the conductive layer 167a and a portion connected to the conductive layer 167b. do.

[0428] Next, the insulating layer 34 to the protective layer 75 are formed on the insulating layer 166 (Figure 21(A)). These steps can be described by referring to Embodiment 1.

[0429] Next, a separation starting point is formed in the resin layer 23 (Figure 21(B1), (B2)). For the formation method, refer to Embodiment 1.

[0430] Furthermore, when forming multiple display devices on a single fabricated substrate (multi-faceted), one resin layer Using 23, multiple display devices can be formed. For example, the cut in Figure 21(B2) Multiple display devices are arranged inside the eye 64. This allows multiple display devices to be viewed at once. It can be stopped and separated from the fabricated substrate.

[0431] Alternatively, multiple resin layers 23 may be used to create different resin layers 23 for each display device. 21(B3) shows an example of forming four resin layers 23 on a fabricated substrate. 23 By making a frame-shaped cut 64 in each, each display device is created at a different timing. It can be separated from the substrate.

[0432] In this embodiment, the portion of the metal oxide layer 20 that is in contact with the resin layer 23 and the portion of the insulating layer 31 are in contact with each other. A portion is provided. The adhesion (bonding) between the metal oxide layer 20 and the insulating layer 31 is provided by the metal acid The adhesion (bonding) between the ionized layer 20 and the resin layer 23 is higher. Therefore, the resin layer 23 is metal This can suppress unintended peeling from the oxide layer 20. And it can form a starting point for separation. This allows the metal oxide layer 20 and the resin layer 23 to be separated at the desired timing. Therefore, the timing of separation can be controlled, and the force required for separation is small. This allows for increased yield in the separation process and the manufacturing process of the display device.

[0433] Next, the metal oxide layer 20 and the resin layer 23 are separated (Figure 22(A)).

[0434] Then, the substrate 29 is bonded to the exposed resin layer 23 using the adhesive layer 28 (Figure 22). (B)).

[0435] The substrate 29 can function as a support substrate for the display device. A film is attached to the substrate 29. It is preferable to use a resin film, and it is particularly preferable to use a display device. This makes it possible to make the device lighter and thinner. Also, display devices using film substrates can be made from glass or metal. It is less prone to damage compared to using other methods. Furthermore, it can increase the flexibility of the display device. ru.

[0436] As described above, by using a highly heat-resistant material and forming a thick resin layer, a transistor can be created. A display device to which LTPS is applied can be manufactured.

[0437] [Example of display device configuration 3] Figure 23(A) is a top view of the display device 10C. Figures 23(B) and (C) are, respectively, This is an example of a cross-sectional view of the display unit 381 of the display device 10C and a cross-sectional view of the connection part with the FPC 372. ru.

[0438] The display device 10C can be held in a bent state and can be repeatedly bent. ru.

[0439] The display device 10C has a protective layer 75 and a substrate 29. The protective layer 75 side is the display surface of the display device. This is the side. The display device 10C has a display unit 381 and a drive circuit unit 382. Display device 1 An FPC372 is attached to 0C.

[0440] The conductive layer 43c and the FPC 372 are electrically connected via the connector 76 (Figure 23). (B), (C)). The conductive layer 43c is made of the same material as the source and drain of the transistor. They can be formed using the same process.

[0441] The display device shown in Figure 23(C) does not have a resin layer 23 and an insulating layer 31, and the resin layer 23a, insulating layer It has a laminated structure of edge layer 31a, resin layer 23b, and insulating layer 31b. Having this feature can improve the reliability of the display device.

[0442] This embodiment can be combined with other embodiments as appropriate.

[0443] (Embodiment 3) In this embodiment, a display device and input / output that can be manufactured by applying one aspect of the present invention are provided. The apparatus will be explained using Figures 24 to 33.

[0444] The display device of this embodiment includes a first display element that reflects visible light and a second element that emits visible light. It has a display element.

[0445] The display device of this embodiment uses light reflected by the first display element and light emitted by the second display element. It has the function of displaying images using either one or both of the following methods.

[0446] The first display element can be an element that reflects ambient light to display. Because the child does not have a light source (does not use artificial light sources), the power consumption during display is extremely low. It becomes possible to do so.

[0447] Typically, a reflective liquid crystal element can be used as the first display element. Alternatively, the first As a display element, a shutter-type MEMS (Micro Electro Mech) is used. In addition to optical system elements and optical interference MEMS elements, microcapsules Methods such as electrophoresis, electrowetting, and electronic powder fluid (registered trademark) are used. The applied elements can be used.

[0448] It is preferable to use a light-emitting element for the second display element. Because light's brightness and chromaticity are not affected by ambient light, it has high color reproduction capabilities (wide color gamut). ), it can display images with high contrast and vivid colors.

[0449] The second display element could be, for example, an OLED (Organic Light Emitting) Diode), LED(Light Emitting Diode), QLED(Q Self-luminescent materials such as uantum-dot light-emitting diodes A light-emitting element can be used.

[0450] The display device of this embodiment has a first mode in which it displays an image using only the first display element. A second mode in which an image is displayed using only the second display element, and the first display element and It has a third mode in which an image is displayed using a second display element, and these modes are automatically controlled. It can be switched on and off manually.

[0451] In the first mode, an image is displayed using the first display element and ambient light. The first mode is a light source. Because it does not require [something], it is an extremely low-power mode. For example, when there is sufficient ambient light on the display device When light is incident on the display (e.g., in a bright environment), the first display element uses the reflected light to display the image. This is possible. For example, if the ambient light is sufficiently strong and the ambient light is white light or light close to white light. This is effective in the following cases. The first mode is a mode suitable for displaying characters. The first mode uses light reflected from ambient light, allowing for a display that is easy on the eyes. It has the effect of reducing eye strain.

[0452] In the second mode, the image is displayed using light emitted by the second display element. Regardless of the degree or ambient light color, it is extremely vivid (high contrast and high color reproduction). It can display information. For example, it can be displayed in situations where the illumination is extremely low, such as at night or in a dark room. It is effective. Also, if the surroundings are dark, a bright display may be perceived as dazzling by the user. Yes. To prevent this, it is preferable to use a display with reduced brightness in the second mode. This reduces glare and also lowers power consumption. Second mode This mode is suitable for displaying vivid images (still images and videos).

[0453] In the third mode, both the reflected light from the first display element and the light emitted from the second display element are used. It is used to display the image. It provides a brighter display than the first mode, while being quieter than the second mode. It can reduce power consumption. For example, under indoor lighting, or during the morning or evening hours when the illuminance is low. This is effective when the chromaticity is relatively low, or when the ambient light is not white.

[0454] This configuration provides a highly visible and convenient display regardless of ambient light. This enables the creation of a display that is highly visible and convenient both in natural light and indoors. It can be implemented.

[0455] The third mode can be described as a mode that uses a hybrid display method.

[0456] Furthermore, the display device and input / output device of this embodiment may also be called a hybrid display. It is possible.

[0457] Hybrid display uses both reflected and self-illuminating light on a single panel to control color and other aspects. This is a method of displaying characters and / or images by complementing each other's light intensity. Brid display refers to a display where multiple display elements are used in the same pixel or sub-pixel. A method of displaying text and / or images using light. However, hybrid displays are not available. When we look at the hybrid displays being implemented locally, one of the multiple display elements is Pixels or subpixels displayed using multiple display elements, and pixels displayed using two or more display elements. Alternatively, it may have subpixels.

[0458] Furthermore, in this specification, etc., any expression that satisfies any one or more of the above configurations is considered to be: It's called a hybrid display.

[0459] Furthermore, hybrid displays have multiple display elements in the same pixel or the same sub-pixel. The multiple display elements include, for example, a reflective element that reflects light and an element that emits light. Self-emitting elements are one example. Note that reflective elements and self-emitting elements are controlled independently. It is possible. The hybrid display has a display unit that emits both reflected light and self-emissive light. It has the function of displaying text and / or images using either one or both of these methods.

[0460] The display device of this embodiment has a first pixel having a first display element and a second display element The first and second pixels each have multiple such pixels. The first and second pixels are each, It is preferable to arrange them in a kus-shape.

[0461] The first pixel and the second pixel can each be configured to have one or more subpixels. For example, a pixel can have one subpixel (such as white (W)) or three subpixels. The composition consists of three colors: red (R), green (G), and blue (B), or yellow (Y), sheath. (For example, a combination of three colors: C, Magenta, and C, or a configuration with four subpixels (red ( The four colors are red (R), green (G), blue (B), and white (W), or red (R), green (G), You can apply four colors, such as blue (B) and yellow (Y).

[0462] The display device of this embodiment performs full-color display using either the first pixel or the second pixel. The configuration can be as follows: Alternatively, the display device of this embodiment may display a monochrome display in the first pixel. The configuration involves displaying in one pixel in either color or grayscale, and displaying in full color in the second pixel. This is possible. Displaying in black and white or grayscale using the first pixel is possible for document information It is suitable for displaying information that does not require color, such as news reports.

[0463] Figure 24 is a schematic perspective view of the display device 300A. The display device 300A consists of a substrate 351 and a base It has a structure in which a plate 361 is bonded together. In Figure 24, the substrate 361 is clearly indicated by a dashed line. ru.

[0464] The display device 300A includes a display unit 362, a circuit 364, wiring 365, etc. Figure 24 shows the table. This shows an example in which IC (integrated circuit) 373 and FPC 372 are mounted on the display device 300A. Therefore, the configuration shown in Figure 24 has a display device 300A, an IC, and an FPC. It can also be called a display module.

[0465] For example, a scan line drive circuit can be used as circuit 364.

[0466] Wiring 365 has the function of supplying signals and power to the display unit 362 and the circuit 364. The signal and power are supplied externally via FPC372 or from IC373 to wiring 365. It will be entered.

[0467] Figure 24 shows the COG (Chip On Glass) method or COF (Chip on An example is shown in which IC373 is provided on substrate 351 using a film method, etc. 73 can be used to apply an IC having, for example, a scan line drive circuit or a signal line drive circuit. The display device 300A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF (Cross-of-Fiber) method or similar.

[0468] Figure 24 shows a magnified view of a part of the display unit 362. The display unit 362 has multiple displays. The electrodes 311b of the element are arranged in a matrix. The electrodes 311b receive visible light. It has a reflective function and functions as a reflective electrode for the liquid crystal element 180.

[0469] Furthermore, as shown in Figure 24, the electrode 311b has an opening 451. In addition, the display unit 362 The light-emitting element 170 is located on the substrate 351 side of the electrode 311b. Light is emitted towards the substrate 361 through the aperture 451 of electrode 311b. The area of ​​the light-emitting region and the area of ​​the aperture 451 may be equal. If one of the areas, the volume or the opening 451, is larger than the other, the margin for misalignment is large. This is preferable because it makes the area larger. In particular, the area of ​​the aperture 451 is equal to the area of ​​the light-emitting region of the light-emitting element 170. It is preferable that it be larger. If the aperture 451 is small, some of the light from the light-emitting element 170 It may be blocked by electrode 311b and unable to be extracted to the outside. Make the opening 451 sufficiently large. This prevents the light emission from the light-emitting element 170 from being wasted.

[0470] Figure 25 shows a portion of the region including the FPC 372 of the display device 300A shown in Figure 24, and circuit 3. When a portion of the area including 64 and a portion of the area including the display unit 362 are cut off, the cross-section An example of a surface is shown.

[0471] The display device 300A shown in Figure 25 has a transistor 201 between substrate 351 and substrate 361. , transistor 203, transistor 205, transistor 206, liquid crystal element 180, It has an optical element 170, an insulating layer 220, a colored layer 131, a colored layer 134, etc. The substrate 361 and the insulating layer The edge layer 220 is bonded via the adhesive layer 141. The substrate 351 and the insulating layer 220 are bonded via the adhesive layer It is bonded via 142.

[0472] The substrate 361 has a colored layer 131, a light-shielding layer 132, an insulating layer 121, and a liquid crystal element 180. An electrode 113 that functions as a conductive electrode, an alignment film 133b, an insulating layer 117, and the like are provided. The outer surface of the substrate 361 has a polarizing plate 135. The insulating layer 121 is a planarizing layer It may have a function. The insulating layer 121 makes the surface of the electrode 113 roughly flat. Therefore, the orientation state of the liquid crystal layer 112 can be made uniform. The insulating layer 117 is the sergometer of the liquid crystal element 180. It functions as a spacer to hold the cap. When the insulating layer 117 transmits visible light. Alternatively, the insulating layer 117 may be placed overlapping the display area of ​​the liquid crystal element 180.

[0473] The liquid crystal element 180 is a reflective liquid crystal element. The liquid crystal element 180 functions as a pixel electrode. It has a laminated structure in which electrode 311a, liquid crystal layer 112, and electrode 113 are stacked. An electrode 311b that reflects visible light is provided in contact with the substrate 351 side. b has an aperture 451. Electrodes 311a and 113 transmit visible light. Liquid crystal layer 11 An alignment film 133a is provided between 2 and electrode 311a. The liquid crystal layer 112 and electrode 113 An alignment film 133b is provided in between.

[0474] In the liquid crystal element 180, electrode 311b has the function of reflecting visible light, and electrode 113 is It has the function of transmitting visible light. Light incident from the substrate 361 side is polarized by the polarizing plate 135. It then passes through electrode 113 and liquid crystal layer 112, and is reflected by electrode 311b. 2 passes through electrode 113 again and reaches polarizing plate 135. At this time, electrode 311b and The orientation of the liquid crystal can be controlled by the voltage applied between poles 1, 1, and 3, thereby controlling the optical modulation of light. Yes, it is possible. In other words, the intensity of the light emitted through the polarizing plate 135 can be controlled. Furthermore, light is absorbed by the colored layer 131, except for light in a specific wavelength range, and is extracted. The resulting light will, for example, be red in color.

[0475] As shown in Figure 25, an electrode 311a that transmits visible light is provided in the aperture 451. This is preferable. This allows the region overlapping with the opening 451 to function similarly to the other regions. Because the liquid crystal layer 112 is oriented, liquid crystal alignment defects occur at the boundaries of these regions, resulting in unintended consequences. This can suppress the leakage of light.

[0476] In the connection portion 207, the electrode 311b is connected to the transistor 206 via the conductive layer 221b. It is electrically connected to the conductive layer 222a of the liquid crystal element 1. Transistor 206 is electrically connected to the liquid crystal element 1. It has 80 drive control functions.

[0477] A connecting portion 252 is provided in a part of the area where the adhesive layer 141 is provided. In 2, a conductive layer obtained by processing the same conductive film as electrode 311a, and one of electrode 113 The part is electrically connected by the connector 243. Therefore, the part formed on the substrate 361 side The electrode 113 receives a signal or electricity input from the FPC 372 connected to the substrate 351. The position can be supplied via the connection part 252.

[0478] For example, conductive particles can be used as the connector 243. This can be achieved by using a material in which the surface of particles such as organic resin or silica is coated with a metal material. It is possible. Using nickel or gold as the metallic material is preferable because it can reduce contact resistance. Particles coated with two or more metal materials in layers, such as nickel coated with gold, are used. It is preferable that the connecting body 243 be made of a material that is elastically deformable or plastically deformable. It is preferable that they are present. At this time, the conductive particles, which are the connectors 243, are as shown in Figure 25. It may take on a shape that is flattened in the vertical direction. This is done so that the connector 243 and the electrical This increases the contact area with the conductive layer being connected, reducing contact resistance and preventing connection failures. This can help prevent malfunctions from occurring.

[0479] It is preferable that the connecting body 243 be positioned so as to be covered by the adhesive layer 141. For example, before curing. The connecting elements 243 can be dispersed in the adhesive layer 141.

[0480] The light-emitting element 170 is a bottom-emission type light-emitting element. The light-emitting element 170 has an insulating layer From the 220 side, there is an electrode 191 that functions as a pixel electrode, an EL layer 192, and a common electrode. It has a laminated structure in which electrodes 193 are stacked in order. Electrode 191 is provided in the insulating layer 214. The transistor 205 is connected to the conductive layer 222a through the opening. The transistor 205 has the function of controlling the drive of the light-emitting element 170. The insulating layer 216 It covers the end of electrode 191. Electrode 193 contains a material that reflects visible light, and electrode 191 It contains a material that transmits visible light. An insulating layer 194 is provided covering the electrode 193. The light emitted by the optical element 170 is directed towards the colored layer 134, the insulating layer 220, the aperture 451, the electrode 311a, etc. It is injected towards the substrate 361 via [a specific method / tool].

[0481] The liquid crystal element 180 and the light-emitting element 170 change the color of the colored layer depending on the pixel, thereby enabling various It can display color. The display device 300A uses a liquid crystal element 180 to display color. It is possible to do so. The display device 300A uses the light-emitting element 170 to perform color display. It is possible.

[0482] Transistor 201, transistor 203, transistor 205, and transistor 20 6 is formed on the substrate 351 side surface of the insulating layer 220. These transients The stan can be manufactured using the same process.

[0483] The circuit electrically connected to the liquid crystal element 180 is the circuit electrically connected to the light-emitting element 170. It is preferable that they be formed on the same plane. This allows the two circuits to be formed on separate planes. Compared to the case where two transistors are used, the thickness of the display device can be reduced. Also, two transistors Because they can be manufactured using the same process, compared to forming two transistors on separate surfaces... This allows for a simplification of the manufacturing process.

[0484] The pixel electrodes of the liquid crystal element 180 are separated by the gate insulating layer of the transistor, and the light-emitting element 1 It is located opposite to the 70 pixel electrodes.

[0485] Here, transistor 20 has a metal oxide in the channel formation region and has an extremely low off-current. When 6 is applied, or when a memory element electrically connected to transistor 206 is applied In such cases, when displaying a still image using the liquid crystal element 180, the writing operation to the pixels is stopped. Even if the frame rate is extremely small, it becomes possible to maintain the gradation. The display can be maintained even if the frame rate is extremely small. In one aspect of the present invention, the frame rate can be made extremely small. This allows for operation with low power consumption.

[0486] Transistor 203 is a switching transistor that controls the selected and deselected states of pixels. It is a transistor (also called a selector transistor). Transistor 205 is light-emitting. This is a transistor (also called a driving transistor) that controls the current flowing through element 170.

[0487] On the substrate 351 side of the insulating layer 220, there are insulating layers 211, 212, 213, and insulating layer An insulating layer such as 214 is provided. A portion of the insulating layer 211 is the gateway of each transistor. It functions as an insulating layer. The insulating layer 212 is provided covering the transistor 206, etc. The insulating layer 213 is provided covering the transistor 205, etc. The insulating layer 214 is flat. It functions as an insulating layer. Furthermore, the number of insulating layers covering the transistor is not limited; a single layer is sufficient. It is acceptable to have two or more layers.

[0488] At least one layer of the insulating layer covering each transistor is designed to prevent the diffusion of impurities such as water and hydrogen. It is preferable to use a material. This allows the insulating layer to function as a barrier film. This configuration prevents impurities from diffusing into the transistor from the outside. This makes it possible to effectively suppress and realize a highly reliable display device.

[0489] Transistor 201, transistor 203, transistor 205, and transistor 20 6 is a conductive layer 221a that functions as a gate, and an insulating layer 211 that functions as a gate insulating layer. , conductive layers 222a and 222b which function as source and drain, and semiconductor It has a body layer 231. Here, multiple layers obtained by processing the same conductive film have the same coating. It has a chin pattern.

[0490] Transistors 201 and 205 are transistors 203 and 2 In addition to the configuration of 06, it has a conductive layer 223 that functions as a gate.

[0491] Transistors 201 and 205 have two semiconductor layers in which the channel is formed. A configuration is applied in which the gates of the transistors are clamped. The threshold voltage can be controlled. Two gates are connected and the same signal is supplied to them. The transistor may be driven by such a transistor. Compared to a standard, it is possible to increase the field-effect mobility and increase the on-current. Yes, it is possible. As a result, it is possible to create circuits that can be driven at high speed. Furthermore, the circuit section This makes it possible to reduce the occupied area by using transistors with high on-current. Even if the number of wires increases when the display device is made larger or higher resolution, each wire This makes it possible to reduce signal delay and suppress display inconsistencies.

[0492] Alternatively, one of the two gates can be given a potential to control the threshold voltage, while the other is driven. By applying a potential for this purpose, the threshold voltage of the transistor can be controlled.

[0493] There are no limitations on the structure of the transistors in the display device. The transistors in circuit 364 and The transistors in the display unit 362 may have the same structure or different structures. This is also acceptable. The multiple transistors in circuit 364 may all have the same structure, and there may be two types. Multiple structures of the same type or higher may be used in combination. Similarly, the display unit 362 may have multiple The transistors may all have the same structure, or two or more different structures may be used in combination. It's okay if it's done that way.

[0494] It is preferable to use a conductive material containing an oxide for the conductive layer 223. When forming the conductive film, the film is formed in an oxygen-containing atmosphere, thereby introducing oxygen into the insulating layer 212. It can be supplied. The proportion of oxygen gas in the film-forming gas is in the range of 90% to 100%. It is preferable to do so. The oxygen supplied to the insulating layer 212 is absorbed by the subsequent heat treatment into the semiconductor layer 23. It is supplied to 1, and it is possible to reduce oxygen vacancies in the semiconductor layer 231.

[0495] In particular, it is preferable to use a metal oxide with reduced resistance for the conductive layer 223. It is preferable to use a hydrogen-releasing insulating film, such as a silicon nitride film, for the insulating layer 213. i. Hydrogen is supplied into the conductive layer 223 during the deposition of the insulating layer 213 or by subsequent heat treatment. This effectively reduces the electrical resistance of the conductive layer 223.

[0496] A colored layer 134 is provided in contact with the insulating layer 213. The colored layer 134 is in contact with the insulating layer 214. It is covered.

[0497] A connection portion 204 is provided in the area where substrates 351 and 361 do not overlap. In section 204, the wiring 365 is electrically connected to the FPC 372 via the connecting layer 242. The connection part 204 has the same configuration as the connection part 207. The upper surface of the connection part 204 is electric The conductive layer obtained by processing the same conductive film as pole 311a is exposed. This allows for connection The part 204 and the FPC 372 can be electrically connected via the connecting layer 242.

[0498] A linear polarizer may be used as the polarizer plate 135 placed on the outer surface of the substrate 361, but a circular polarizer may also be used. Optical plates can also be used. Examples of circular polarizers include linear polarizers and quarter-wavelength phase difference plates. A laminated structure can be used. This makes it possible to suppress external light reflection. Furthermore, depending on the type of polarizing plate, the cell gap and orientation of the liquid crystal element used in the liquid crystal element 180, By adjusting the drive voltage and other parameters, the desired contrast can be achieved.

[0499] Furthermore, various optical components can be placed on the outside of the substrate 361. Examples of optical components include: Polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-gathering films, etc. It can be listed as follows. In addition, the outside of the substrate 361 has an antistatic film to suppress the adhesion of dust and dirt. It features a water-repellent film to make it difficult for things to stick to it, and a hard coat film to suppress the occurrence of scratches during use. That's good too.

[0500] Substrates 351 and 361 are made of glass, quartz, ceramic, sapphire, and , respectively. Flexible materials can be used for substrates 351 and 361. Having it increases the flexibility of the display device.

[0501] Examples of liquid crystal elements 180 include vertical alignment (VA: Vertical Alignment). A liquid crystal element to which mode t) is applied can be used. As for the vertical alignment mode, MV A (Multi-Domain Vertical Alignment) mode, PV A(Patterned Vertical Alignment) mode, ASV(A Features such as the Advanced Super View mode can be used.

[0502] Liquid crystal elements 180 can be liquid crystal elements to which various modes are applied. In addition to VA mode, there are also TN (Twisted Nematic) mode and IPS (In- Plane-Switching) mode, FFS (Fringe Field Switching) tching) mode, ASM(Axially Symmetric aligned) Micro-cell mode, OCB (Optically Compensated) d Birefringence) mode, FLC (Ferroelectric Li) quid Crystal) mode, AFLC(AntiFerroelectric) mode Liquid Crystal mode, STN (Super Twisted Nem atic mode, TBA (Transverse Bend Alignment) mode Electrically Controlled Birefring (ECB) Liquid crystal elements with modes such as ence mode and guest host mode applied can be used.

[0503] Liquid crystal elements are elements that control the transmission or non-transmission of light through the optical modulation effect of liquid crystals. The optical modulation effect of liquid crystals is due to the electric field applied to the liquid crystal (horizontal electric field, vertical electric field, or diagonal electric field). It is controlled by (including the electric field in the direction). As for the liquid crystal used in the liquid crystal element, thermotropic Low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) (ispersed liquid crystal), polymer network liquid crystal (PN LC: Polymer Network Liquid Crystal), ferroelectric liquid Crystals, antiferroelectric liquid crystals, etc., can be used. Depending on the conditions, these liquid crystal materials can be cored. It exhibits phases such as the tellic phase, smectic phase, cubic phase, chiral nematic phase, and isotropic phase. .

[0504] As the liquid crystal material, either positive-type or negative-type liquid crystal may be used, depending on the application. The optimal liquid crystal material can be used depending on the mode and design.

[0505] An alignment layer can be provided to control the orientation of the liquid crystal. A transverse electric field method is employed. In some cases, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is one of the liquid crystal phases. Yes, as the temperature of a cholesteric liquid crystal is increased, it transitions from the cholesteric phase to the isotropic phase. This is the phase that appears earlier. The blue phase only appears within a narrow temperature range, so improving the temperature range is necessary. To achieve this, a liquid crystal composition containing several weight percent or more of a chiral agent is used in the liquid crystal. Blue phase A liquid crystal composition containing a liquid crystal and a chiral agent exhibits a short response speed and optical isotropy. Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment. It has low viewing angle dependence. Also, since an alignment layer is not required, rubbing treatment is unnecessary. Therefore, electrostatic discharge damage caused by the rubbing process can be prevented during the manufacturing process. This can reduce malfunctions and damage to liquid crystal displays.

[0506] When using a reflective liquid crystal element, a polarizing plate 135 is provided on the display surface side. Furthermore, placing a light diffuser on the display surface side is preferable because it improves visibility.

[0507] A front light may be provided outside the polarizing plate 135. As for the front light, It is preferable to use edge-lit front lights. Using this method is preferable because it reduces power consumption.

[0508] Materials that can be used in light-emitting elements, transistors, insulating layers, conductive layers, adhesive layers, connecting layers, etc. For details, please refer to the description of Embodiment 1.

[0509] <Application Examples> In one aspect of the present invention, a display device equipped with a touch sensor (hereinafter referred to as an input / output device, touch sensor) It is possible to produce (also written as Nell).

[0510] The detection element (also called a sensor element) of the input / output device according to one embodiment of the present invention is not limited. Alternatively, various sensors capable of detecting the proximity or contact of an object to be detected, such as a stylus. It can be applied as a detection element.

[0511] For example, sensor types include capacitive, resistive, surface acoustic wave, and infrared. Various methods can be used, such as optical and pressure-sensitive methods.

[0512] In this embodiment, an input / output device having a capacitive sensing element will be used as an example for explanation.

[0513] Capacitive capacitance methods include surface capacitance and projected capacitance. Capacitive capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0514] An input / output device according to one aspect of the present invention involves bonding together a separately manufactured display device and a detection element. The configuration includes electrodes and other components that constitute the detection element on one or both of the pair of substrates that make up the display panel. Various configurations can be applied, such as the configuration shown.

[0515] The following describes an input / output device in which a separately manufactured display device and a detection element are bonded together. Let me explain. Figures 26 and 30 show flowcharts of a method for manufacturing a display device according to one embodiment of the present invention. Figures 27 and 28(A) and (B) show cross-sectional views of the display device under construction. Figure 27 is a cross-sectional view of the display device under construction. This corresponds to step S6 shown in 26. Similarly, Figure 28(A) shows step S7, Figure 28( B) corresponds to step S8. Figures 31 and 32 show cross-sectional views of the display device under construction. Figure 31 shows the same as step S26 shown in Figure 30. Similarly, Figure 32 shows the same as step Compatible with S27.

[0516] As shown in Figure 26, first, a metal layer 19 is formed on the fabricated substrate 14 (step S1). Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S2). Then, by performing H2O plasma treatment, the metal layer 19 is oxidized, and the metal oxide layer 20 is formed To achieve this, refer to Embodiment 1 for the method of forming the metal oxide layer 20.

[0517] Next, a first layer 24 is formed on the metal oxide layer 20 (step S3). Then, the first The layer 24 is cured to form the resin layer 23 (step S4). Here, the first layer 24 The resin layer 23 is formed by applying and baking. You can refer to Embodiment 1.

[0518] Next, transistors and the like are formed on the resin layer 23 (step S5). A light-emitting element is formed and sealed (step S6) on the resin layer 23. Each of the components formed will be explained using Figure 27. Note that the components already described are You can refer to the previous description.

[0519] As shown in Figure 27, a metal oxide layer 20 is formed on the fabricated substrate 14, and the metal oxide layer 2 A resin layer 23 is formed on the 0. An insulating layer 115 is formed on the resin layer 23. The insulating layer 115 preferably has high barrier properties. The insulating layer 115 has a silicon nitride film. This is preferable. On the insulating layer 115, electrodes 311a, 311b, and 311c are They are stacked in this order. The ends of electrode 311a and electrode 311c are connected to the ends of electrode 311b. They are located outside the edges and are in contact with each other. Electrodes 311a and 311c have visible A conductive film that transmits light is used. A conductive film that reflects visible light is used for electrode 311b. An opening 451 is provided at pole 311b. The opening 451 is the light-emitting region of the light-emitting element 170. It overlaps with the electrode 311c, and an insulating layer 220a is provided on the insulating layer 220a. A conductive layer 224 is provided, and an insulating layer 220b is provided on the conductive layer 224. The conductive layer 224 functions as one electrode of the capacitive element. On the insulating layer 220b, A transistor 203, a transistor 205, and a transistor 206 are provided. The source or drain of the transistor 206 is connected to the electrode 311c at the connection part 207. They are electrically connected. Transistor 205 has two gates. The two gates are , electrically connected. The source or drain of transistor 205 is connected to conductive layer 22 It is electrically connected to the electrode 191 of the light-emitting element 170 via 8. Each transistor is an insulator Covered with edge layer 212, insulating layer 213, insulating layer 214, insulating layer 225, and insulating layer 215 It is preferable that one or more of these insulating layers have high barrier properties. (Figure 27) This shows an example in which materials with high barrier properties are used for insulating layers 213 and 225. Insulating layer 21 3 is provided to cover the edges of insulating layer 220a, insulating layer 220b, insulating layer 212, etc. The edge layer 225 is provided to cover the edges of the insulating layer 214. The coating film 226 reflects visible light. The coating film 226 reflects a portion of the light emitted from the light-emitting element 170, towards the opening 451 side. It has the function of supplying to. The lens 227 has the function of transmitting the light emitted from the light-emitting element 170. The lens 227 overlaps with the light-emitting region of the light-emitting element 170. The light-emitting element 170 has electrodes 19 1. It has an EL layer 192 and an electrode 193. The EL layer 192 is painted in different colors for each subpixel. The ends of the electrode 191 are covered with an insulating layer 216. The insulating layer 217 is space It functions as a substrate. The light-emitting element 170 and the substrate 351 are bonded together by the adhesive layer 142. They are combined.

[0520] The material for one or both of the insulating layer 214 and the insulating layer 215 has a refractive index of 1.55. This includes materials in the vicinity of 1.66, materials with a refractive index of 1.66 or nearby, acrylic resin, and polyimide. Resins and the like can be used.

[0521] A metal can be used as the material for the coating film 226. Specifically, a material containing silver, A coating film 226 can be formed using a material containing silver and palladium, a material containing silver and copper, etc. ru.

[0522] The refractive index of lens 227 is preferably 1.3 or more and 2.5 or less. It can be formed using either or both inorganic and organic materials.

[0523] The material of the lens 227 may include, for example, a material containing an oxide or sulfide, and a resin. Examples of materials include cerium oxide. Specifically, materials containing oxides or sulfides include cerium oxide. Hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, oxide Titanium, yttrium oxide, zinc oxide, oxides containing indium and tin, indium and gal Examples include oxides containing lium and zinc, and zinc sulfide. Specifically, as resin-containing materials, resins into which chlorine, bromine, or iodine have been introduced, resins into which heavy metal atoms have been introduced, and aromatic rings Examples include resins into which sulfur has been introduced, or resins into which sulfur has been introduced. Alternatively, resins and the resin in question Materials containing nanoparticles of a material with a high refractive index can be used in lens 227. Titanium oxide Zirconium oxide or similar materials can be used as nanoparticles.

[0524] Next, the transistors and other components are removed from the fabricated substrate 14 and transferred to the substrate 351 side (Step S 7) Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, exposing the resin layer 23. (Figure 28(A)).

[0525] Next, the resin layer 23 is removed to expose the insulating layer 115 (step S8). Part or all of the insulating layer 115 may be removed to expose the electrode 311a. By leaving a high insulating layer 115 intact, moisture can enter the transistors and light-emitting elements 170. This can be suppressed and the reliability of the display device can be improved. Here, by ashing Remove the resin layer 23 (Figure 28(B)).

[0526] Then, the liquid crystal element 180 is formed (step S9). On the insulating layer 115 (or electrode 31 An alignment film 133a is formed on 1a. Also, a colored layer 131 is formed on one side of the substrate 361. The insulating layer 121, insulating layer 232, electrode 113, insulating layer 117, and alignment film 133b are formed in order. Figure 29 shows an example where the colored layer 131 does not overlap with the light-emitting region of the light-emitting element 170. However, the colored layer 131 may be provided superimposed on the light-emitting region of the light-emitting element 170. The insulating layer 121 is It functions as an overcoat. A highly barrier insulating film is preferred for the insulating layer 232. The electrode 113 functions as a common electrode for the liquid crystal element 180. The insulating layer 117 is a liquid crystal element It functions as a spacer to maintain the cell gap of child 180. The insulating layer 117 is movable It transmits visible light.

[0527] The liquid crystal layer 112 is sandwiched between the alignment layer 133a and the alignment layer 133b, so as to the substrate 351 and The liquid crystal element 180 is formed by bonding it with the substrate 361. It has a pole 311a, an electrode 311b, an electrode 311c, a liquid crystal layer 112, and an electrode 113.

[0528] Furthermore, the diffusion film 233 and the polarizing plate 135 are bonded to the other side of the substrate 361. Then, the substrate 235, on which a touch sensor is provided on one side, is attached to the polarizing plate 135. Note that in Figure 29, the illustration of the adhesive layer is omitted in some places. The other side of the substrate 235 The surface is preferably treated with an anti-reflective coating. For example, an anti-glare treatment is applied. It is preferable that the surface has irregularities to diffuse reflected light and reduce glare. This is possible. Between the conductive layer 234a and conductive layer 234b of the touch sensor, there is an insulating layer 234c A conductive layer 234b is covered with an insulating layer 234d.

[0529] Based on the above, the input / output device 310A shown in Figure 29 can be formed. Subsequently, FPC , ICs etc. are mounted (step S10), and the display can be checked (step S11 ).

[0530] The flow shown in Figure 26 includes a step of removing the resin layer 23 that has been peeled off from the fabricated substrate 14. On the other hand, Figure 30 shows the flow when that step is not included.

[0531] As shown in Figure 30, first, a metal layer 19 is formed on the fabricated substrate 14 (step S21). Then, the metal layer 19 is oxidized to form a metal oxide layer 20 (step S22). Here, by performing H2O plasma treatment, the metal layer 19 is oxidized, and the metal oxide layer 20 This forms the metal oxide layer 20. For a method of forming the metal oxide layer 20, refer to Embodiment 1.

[0532] Next, a first layer 24 is formed on the metal oxide layer 20 (step S23). The first layer 24 is cured to form the resin layer 23 (step S24). A resin layer 23 is formed by applying 24 and baking it. Regarding the method of forming the resin layer 23: You can refer to Embodiment 1. In this embodiment, a resin layer 23 having an opening is formed. For example, by leaving an opening in the resin layer 23 in the area where you want to expose the conductive layer, after peeling, The conductive layer can be exposed without removing the resin layer 23. If the transmittance to visible light is low, the resin layer 23 is left open in the part where light is extracted. Therefore, after peeling, the decrease in light extraction efficiency can be suppressed without removing the resin layer 23.

[0533] Next, transistors and the like are formed on the metal oxide layer 20 and the resin layer 23 (Step S 25). Then, a light-emitting element is formed and sealed (stereo). (S26). Each configuration will be explained using Figure 31. Note that the configurations already described... For further information, please refer to the previous description.

[0534] As shown in Figure 31, a metal oxide layer 20 is formed on the fabricated substrate 14, and the metal oxide layer 2 A resin layer 23 is formed on the 0. An opening is provided in the resin layer 23. In the portion where 3 is not provided, there is a region where the metal oxide layer 20 and the electrode 311a are in contact, and There is a region where the metal oxide layer 20 and the insulating layer 213 are in contact. On the lipid layer 23, electrodes 311a, 311b, and 311c are stacked in this order. The ends of electrode 311a and electrode 311c are located further out than the end of electrode 311b. They are placed and in contact with each other. Electrodes 311a and 311c have a conductive film that transmits visible light. The electrode 311b uses a conductive film that reflects visible light. These electrodes do not overlap. An insulating layer is provided on the electrode 311c. A 220a is provided, and a conductive layer 224 is provided on the insulating layer 220a, and conductive An insulating layer 220b is provided on layer 224. The conductive layer 224 is one of the capacitive elements. It functions as an electrode. Transistors 203 and 205 are located on the insulating layer 220b. , and transistor 206 is provided. Source or Dray The transistor 2 is electrically connected to electrode 311c at connection point 207. 05 has two gates. The two gates are electrically connected. Transis The source or drain of the 205 is connected to the electrode 19 of the light-emitting element 170 via the conductive layer 228. 1 is electrically connected. Each transistor is connected to insulating layer 212, insulating layer 213, insulating layer 21 4. It is covered with insulating layer 225 and insulating layer 215. One or more of these insulating layers It is preferable that the edge layer has high barrier properties. In Figure 31, the insulating layer 213 and the insulating layer 225 have high barrier properties. An example using a highly reflective material is shown. The insulating layer 213 is made of insulating layer 220a and insulating layer 220b. The insulating layer 225 is provided to cover the edges of the insulating layer 212, etc. The insulating layer 225 covers the edges of the insulating layer 214. It is provided as follows. The coating film 226 is a film that reflects visible light. The coating film 226 is a light-emitting element It has the function of reflecting a portion of the light emitted by the sub-element 170 and supplying it to the lower side of the drawing. Lens 227 is The lens 227 has the function of transmitting the light emitted from the light-emitting element 170. It overlaps with the region. The light-emitting element 170 has an electrode 191, an EL layer 192, and an electrode 193. The EL layer 192 is painted in a different color for each sub-pixel. The ends of the electrode 191 are coated with insulating layer 21. It is covered with 6. The insulating layer 217 functions as a spacer. By the adhesive layer 142 The light-emitting element 170 and the substrate 351 are bonded together.

[0535] Next, the transistors and other components are removed from the fabricated substrate 14 and transferred to the substrate 351 side (Step S 27) Separation occurs at the interface between the metal oxide layer 20 and the resin layer 23, causing the resin layer 23 to become exposed. (Figure 32). Also, in the parts where the resin layer 23 is not provided, the metal oxide layer 20 and Separation occurs at the interface with electrode 311a, exposing electrode 311a (Figure 32). Therefore, it is preferable to use a material for electrode 311a that has low adhesion to the metal oxide layer 20. Furthermore, the smaller the contact area between the electrode 311a and the metal oxide layer 20, the easier separation at the interface. That's quite nice.

[0536] Then, the liquid crystal element 180 is formed (step S28). On the resin layer 23 and the electrode 311a An alignment layer 133a is formed on top. Also, a colored layer 131 and an insulating layer are formed on one side of the substrate 361. 121, insulating layer 232, electrode 113, insulating layer 117, and alignment film 133b are formed in order. These configurations are the same as those in Figure 29, so their explanation will be omitted.

[0537] The liquid crystal layer 112 is sandwiched between the alignment layer 133a and the alignment layer 133b, so as to the substrate 351 and The liquid crystal element 180 is formed by bonding it with the substrate 361. It has a pole 311a, an electrode 311b, an electrode 311c, a liquid crystal layer 112, and an electrode 113.

[0538] Furthermore, the diffusion film 233 and the polarizing plate 135 are bonded to the other side of the substrate 361. Then, the substrate 235, on which a touch sensor is provided on one side, is attached to the polarizing plate 135. These configurations are the same as those in Figure 29, so their explanation is omitted.

[0539] Based on the above, the input / output device 310B shown in Figure 33 can be formed. Subsequently, FPC , ICs etc. are mounted (step S29), and the display can be checked (step S30 ).

[0540] As described above, the display device of this embodiment has two types of display elements and multiple display modes Because it can be switched between modes, it offers high visibility and convenience regardless of ambient light. expensive.

[0541] This embodiment can be combined with other embodiments as appropriate.

[0542] (Embodiment 4) In this embodiment, a metal that can be used in a transistor disclosed in one aspect of the present invention This section will explain oxides. In particular, metal oxides and CAC (Cloud-Align) This section provides details about the ed Composite-OS.

[0543] CAC-OS or CAC-metal oxide has conductive properties in some parts of the material. In addition, a portion of the material has insulating properties, while the material as a whole has semiconductor properties. Furthermore, CAC-OS or CAC-metal oxide is used in the transistor channel. When used in a formation region, its conductive function is to allow electrons (or holes) that act as carriers to flow. The insulating function is the function of preventing the flow of electrons, which act as carriers. By having the insulating function and the switching function work complementaryly, the switching function (O This function (to enable or disable the on / off state) is imparted to CAC-OS or CAC-metal oxide. This is possible. In CAC-OS or CAC-metal oxide, each By separating these functions, it is possible to maximize the performance of both.

[0544] Furthermore, CAC-OS or CAC-metal oxide has conductive and insulating properties. It has regions. The conductive region has the conductive function described above, and the insulating region has the insulating function described above. It has the function of [this]. Furthermore, within the material, the conductive region and the insulating region are at the nanoparticle level. In some cases, they are separated by a rib. Also, conductive regions and insulating regions are located within the material. They may be unevenly distributed. Furthermore, the conductive regions appear blurred around the edges and connected in a cloud-like pattern. There are cases where this occurs.

[0545] Furthermore, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region The marginal region is defined as being between 0.5 nm and 10 nm, preferably between 0.5 nm and 3 nm. These particles may be dispersed in the material at the following sizes.

[0546] Furthermore, CAC-OS or CAC-metal oxide has different band gaps. It is composed of the following components. For example, CAC-OS or CAC-metal oxi de consists of a component with a wide gap due to the insulating region and a component with a wide gap due to the conductive region. It consists of a component having a low gap. In this configuration, when the carrier is flowing... In components with a narrow gap, the carrier mainly flows. A component having a wide gap acts complementaryly with a component having a narrow gap. In conjunction with the components, carriers also flow to components with a wide gap. Therefore, the above C AC-OS or CAC-metal oxide is applied to the channel formation region of the transistor. When used, a high current driving force is required in the transistor's ON state, i.e., a large ON current. Furthermore, a high field-effect mobility can be obtained.

[0547] In other words, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite (metal It can also be called a matrix composite.

[0548] CAC-OS, for example, has elements constituting the metal oxide that are between 0.5 nm and 10 nm in size. Preferably, the material is composed of materials that are unevenly distributed in size of 1 nm to 2 nm or near that size. Yes. In the following, in metal oxides, one or more metal elements are unevenly distributed. The region having the metal element is 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A state in which particles smaller than or near the size of a nm are mixed together is also called a mosaic or patchy appearance. cormorant.

[0549] Furthermore, it is preferable that the metal oxide contains at least indium. In particular, indium and It is preferable that it contains zinc. In addition to these, aluminum, gallium, and yttrium are also preferable. Umium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium Nium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tan It includes one or more materials selected from tul, tungsten, or magnesium. It's fine if you do that.

[0550] For example, CAC-OS in In-Ga-Zn oxide (among CAC-OS, In-Ga α-Zn oxide may also be specifically referred to as CAC-IGZO. ) is indium oxide (Hereinafter, InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc acid compound (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (hereinafter referred to as GaO X3 Let X3 be a real number greater than 0. ), or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4(X4, Y4, and Z4) Let be a real number greater than 0. The material separates into parts such as ), resulting in a mosaic pattern. Mosaic-like InO X1 , or In X2 Zn Y2 O Z2 However, the structure is uniformly distributed within the membrane. (Hereafter referred to as "cloud-based").

[0551] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a composition in which a region is the main component and a region is mixed. Yes. In this specification, for example, the atomic ratio of In to element M in the first region is The first region is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher compared to the other region.

[0552] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are such examples. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1 +x0) Ga (1-x0) O3(ZnO) m0 It can be expressed as (-1 ≤ x0 ≤ 1, where m0 is any number). Examples include crystalline compounds.

[0553] The above crystalline compounds have a single crystal structure, a polycrystalline structure, or CAAC(c-axis al It has an igned crystal structure. Note that the CAAC structure is a structure with multiple IGZO The nanocrystals have c-axis orientation and are linked without orientation in the ab-plane, forming a crystalline structure. ru.

[0554] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is In, Ga In a material composition containing Zn and O, a portion is observed to be in the form of nanoparticles with Ga as the main component. The region that is obscured and the region that is observed to be in the form of nanoparticles mainly composed of In are each mosaic-like. This refers to a configuration in which particles are randomly dispersed in a ripple-like manner. Therefore, in CAC-OS, the crystal structure This is a secondary element.

[0555] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is included. do not have.

[0556] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary may not be observable between the principal component region and the surrounding area.

[0557] Note that aluminum, yttrium, copper, vanadium, and beryllium can be used instead of gallium. Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more species selected from Cium, etc., are included, CAC-OS will be partially The region is observed to be in the form of nanoparticles mainly composed of the metal element, and a part of it is mainly composed of In. The regions observed in the nanoparticle form are randomly dispersed in a mosaic-like manner. say.

[0558] CAC-OS is formed, for example, by sputtering under conditions where the substrate is not intentionally heated. It is possible. Also, when forming CAC-OS by sputtering, the deposition gas and Then, select from inert gases (typically argon), oxygen gas, and nitrogen gas. You can use one or more of these. Also, the oxygen gas in relation to the total flow rate of the deposition gas during film formation. A lower flow rate ratio is preferable, for example, a flow rate ratio of oxygen gas of 0% or more and less than 30% is preferable. It is preferable that the value be between 0% and 10%.

[0559] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan method, which is the only Out-of-plane method, It has the characteristic of not showing a clear peak. In other words, from X-ray diffraction, the measurement area It can be seen that no orientation is observed in the ab-plane direction or the c-axis direction.

[0560] Furthermore, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam) to illuminate the surface. In the electron diffraction pattern obtained by irradiation, there is a ring-shaped region of high brightness, and Multiple bright spots are observed in the ting region. Therefore, from the electron diffraction pattern, CAC-OS The crystal structure is non-oriented in both the planar and cross-sectional directions (nc(nano-cr)). It can be seen that it has a ystal structure.

[0561] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X-rays Spectroscopy (EDX: Energy Dispersive X-ray spectroscopy) GaO X3 The region in which is the main component and InX2 Zn Y2 O Z2 , or InO X1 Regions where it is the main component are unevenly distributed and mixed. It can be confirmed that it has the following structure.

[0562] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, It has different properties from ZO compounds. In other words, CAC-OS is GaO X3 These are the main components. In a certain area, X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component, and It exhibits phase separation, and has a mosaic-like structure in which regions composed of each element are the main components.

[0563] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X3 Compared to regions where these are the main components, this region has high conductivity. In other words, In X2 Zn Y 20 Z2 , or InO X1 In the region where this is the main component, the carrier flows, causing oxidation. Conductivity as a material semiconductor is exhibited. Therefore, In X2 Zn Y2 O Z2 , or InO X Regions where 1 is the main component are distributed in a cloud-like manner within the oxide semiconductor, resulting in a high field effect. Mobility (μ) can be achieved.

[0564] On the other hand, GaO X3 Regions in which these are the main components are, X2 Zn Y2 O Z2 , or InO X This region has higher insulating properties compared to the region where 1 is the main component. In other words, GaO X3 etc. The distribution of the main component region within the oxide semiconductor suppresses leakage current and improves performance. It can perform itching operations.

[0565] Therefore, when CAC-OS is used in semiconductor devices, GaO X3 Insulation caused by factors such as, In X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner. As a result, high on-current (I on ), and high field effect mobility (μ) can be achieved. Cut.

[0566] Furthermore, semiconductor devices using CAC-OS have high reliability. Therefore, CAC-OS is... It is ideal for various semiconductor devices, including displays.

[0567] This embodiment can be combined with other embodiments as appropriate.

[0568] (Embodiment 5) This embodiment describes a display module and electronic device according to one aspect of the present invention.

[0569] The display module 8000 shown in Figure 34(A) consists of an upper cover 8001 and a lower cover 800 Between 2 and FPC8005 are the display panel 8006, frame 8009, and pre- It has a circuit board 8010 and a battery 8011.

[0570] For example, a display device manufactured using one aspect of the present invention can be used in a display panel 8006. This allows for the production of display modules with a high yield.

[0571] The upper cover 8001 and lower cover 8002 are sized to fit the display panel 8006. The shape and dimensions can be changed as needed.

[0572] Alternatively, a touch panel may be provided on top of the display panel 8006. A resistive or capacitive touch panel is superimposed on the display panel 8006. This is possible. Furthermore, instead of providing a touch panel, the display panel 8006 can be equipped with a touch panel function. It is also possible to give it a feature.

[0573] Frame 8009 provides protection for the display panel 8006, as well as the operation of the printed circuit board 8010. It has the function of an electromagnetic shield to block electromagnetic waves generated by [unclear]. The Mu8009 may also function as a heat sink.

[0574] Printed circuit board 8010 contains power supply circuits and signal outputs for video signals and clock signals. It has a processing circuit. The power supply that provides power to the power supply circuit may be an external commercial power supply. That's fine, or it could be powered by a separately provided battery 8011. Battery 8011 is, This can be omitted when using commercial power.

[0575] Furthermore, the display module 8000 includes additional components such as polarizing plates, phase difference plates, and prism sheets. They may be provided as such.

[0576] Figure 34(B) is a schematic cross-sectional view of the display module 8000 equipped with an optical touch sensor. be.

[0577] The display module 8000 includes a light-emitting section 8015 and a light-receiving section provided on the printed circuit board 8010. It has part 8016. It also has an area enclosed by the upper cover 8001 and the lower cover 8002. The region has a pair of light guides (light guide 8017a, light guide 8017b).

[0578] The upper cover 8001 and the lower cover 8002 can be made of, for example, plastic. It is possible. Also, the upper cover 8001 and the lower cover 8002 can each be made thinner. For example, the thickness of each cover can be set to between 0.5 mm and 5 mm. This makes the display module 8000 extremely lightweight. The top cover 8 can be made with fewer materials. Since parts 001 and the lower cover 8002 can be manufactured, manufacturing costs can be reduced.

[0579] The display panel 8006 connects to the printed circuit board 8010 and the battery via the frame 8009. It is installed overlapping with 8011. The display panel 8006 and frame 8009 are connected to the light guide section 8 017a is fixed to the light guide section 8017b.

[0580] Light 8018 emitted from the light-emitting unit 8015 is directed to the display panel 800 by the light guide unit 8017a. It passes through the upper part of 6, through the light guide part 8017b, and reaches the light receiving part 8016. For example, a finger or a stand Touch operation is detected when light 8018 is blocked by an object to be detected, such as an illustration. It is possible.

[0581] Multiple light-emitting units 8015 are provided, for example, along two adjacent sides of the display panel 8006. Multiple light-receiving units 8016 are provided at positions opposite to the light-emitting unit 8015. This allows for... Information about the location where the operation was performed can be obtained.

[0582] The light-emitting section 8015 can use a light source such as an LED element. In particular, the light-emitting section 8 015 refers to a light source that emits infrared radiation that is invisible to the user and harmless to the user. It is preferable to use [this].

[0583] The light receiving unit 8016 receives light emitted by the light emitting unit 8015 and converts it into an electrical signal using a photoelectric element. It can be used. Preferably, a photodiode capable of receiving infrared light can be used. Cut.

[0584] The light guide portion 8017a and the light guide portion 8017b include at least a member that transmits light 8018. It can be used. By using the light guide section 8017a and the light guide section 8017b, the light-emitting section 8 015 and the light receiving unit 8016 can be placed on the lower side of the display panel 8006, and ambient light can be received. This prevents the light from reaching the light-emitting part 8016 and causing the touch sensor to malfunction. In particular, it absorbs visible light. It is preferable to use a resin that is transparent to infrared rays. This prevents false touches of the touch sensor. This allows for more effective suppression of the problem.

[0585] According to one aspect of the present invention, it is possible to manufacture a highly reliable electronic device having a curved surface. According to one embodiment, flexible and highly reliable electronic devices can be manufactured.

[0586] Examples of electronic devices include television equipment, desktop or notebook computers, etc. Sony computers, monitors for computers, digital cameras, digital video cameras Cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, audio playback devices. Examples include devices and large game machines such as pachinko machines.

[0587] Furthermore, a display device according to one aspect of the present invention can achieve high visibility regardless of the intensity of ambient light. Yes, it is possible. Therefore, portable electronic devices, wearable electronic devices, and electric devices are available. It can be suitably used in devices such as child book terminals.

[0588] The portable information terminal 800 shown in Figures 35(A) and (B) consists of a housing 801, a housing 802, and a display unit 8 It has part 03 and a hinge part 805, etc.

[0589] The housing 801 and housing 802 are connected by a hinge portion 805. The portable information terminal 800 is It can be unfolded from its folded state (Figure 35(A)) as shown in Figure 35(B). This makes it highly portable when carrying it around, and when in use, it has a large display area. It offers excellent visibility.

[0590] The portable information terminal 800 has housings 801 and 802 connected by a hinge 805. A flexible display unit 803 is provided.

[0591] A display device manufactured using one aspect of the present invention can be used in the display unit 803. This allows for the production of mobile information terminals with a high yield.

[0592] The display unit 803 displays at least one of the following: document information, still images, and moving images. This is possible. When displaying document information on the display unit, the portable information terminal 800 can be used as an e-book terminal. It can be used in this way.

[0593] When the portable information terminal 800 is unfolded, the display unit 803 is held in a significantly curved shape. For example, a curved shape with a radius of curvature of 1 mm to 50 mm, preferably 5 mm to 30 mm. The display unit 803 is held, including a portion of it. A portion of the display unit 803 is separated from the housing 801. By arranging pixels continuously across 802, a curved surface can be displayed.

[0594] The display unit 803 functions as a touch panel and can be operated with a finger or stylus. can.

[0595] The display unit 803 is preferably composed of a single flexible display. This allows for continuous, uninterrupted display between casing 801 and casing 802. Yes, it is possible. Furthermore, the configuration includes a display in both the chassis 801 and chassis 802. You may do so.

[0596] The hinge portion 805 is designed to allow the mobile information terminal 800 to be unfolded, and to connect the housing 801 and the housing 802. It is preferable to have a locking mechanism to prevent the angle from becoming larger than a predetermined angle. For example, the angle at which it locks (and cannot be opened further) is between 90 and 180 degrees. It is preferable that there be a certain angle, typically 90 degrees, 120 degrees, 135 degrees, 150 degrees, or 17 degrees. It can be set to 5 degrees, for example. This improves the convenience, safety, and of the mobile information terminal 800. This can increase reliability.

[0597] If the hinge portion 805 has a locking mechanism, then the display portion 803 will not be subjected to excessive force, This prevents damage to the display unit 803. Therefore, a highly reliable portable information terminal can be used. It can be achieved.

[0598] Enclosures 801 and 802 include a power button, operation buttons, an external connection port, a speaker, and a m You must have an orgasm or something similar.

[0599] Either housing 801 or housing 802 is provided with a wireless communication module. Internet, LAN (Local Area Network), Wi-Fi (registered trademark) It is possible to send and receive data via computer networks such as ).

[0600] The portable information terminal 810 shown in Figure 35(C) consists of a housing 811, a display unit 812, and operation buttons 81 3. It has an external connection port 814, a speaker 815, a microphone 816, a camera 817, etc.

[0601] A display device manufactured using one aspect of the present invention can be used in the display unit 812. This allows for the production of mobile information terminals with a high yield.

[0602] The personal information terminal 810 is equipped with a touch sensor on the display unit 812. All operations, such as typing characters, are performed by touching the display unit 812 with a finger or stylus. It is possible to do so.

[0603] Furthermore, the operation button 813 can be used to turn the power ON or OFF, and to display information on the display unit 812. You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0604] Furthermore, the mobile information terminal 810 contains a detection device such as a gyro sensor or an accelerometer. By providing this, the orientation of the mobile information terminal 810 (vertical or horizontal) is determined, and the screen of the display unit 812 is changed. The display orientation can be switched automatically. Also, the screen display orientation can be switched. Touching the display unit 812, operating the operation button 813, or voice input using the microphone 816 It can also be done by force, etc.

[0605] The portable information terminal 810 is selected from, for example, a telephone, a notebook, or an information viewing device. It has multiple functions. Specifically, it can be used as a smartphone. The information terminal 810 can perform functions such as mobile phone calls, email, document viewing and creation, music playback, and video. It can run various applications such as playback, internet communication, and games. ru.

[0606] The camera 820 shown in Figure 35(D) consists of a housing 821, a display unit 822, an operation button 823, and It has a shutter button 824, etc. The camera 820 also has a detachable lens 826. It is attached.

[0607] A display device manufactured using one aspect of the present invention can be used in the display unit 822. This allows for the manufacture of cameras with a high yield.

[0608] Here, it is possible to remove and replace the camera 820 and lens 826 from the housing 821. Although this configuration was chosen, the lens 826 and the housing 821 may be integrated into a single unit.

[0609] Camera 820 captures still images or videos when the shutter button 824 is pressed. It is possible. In addition, the display unit 822 has the function of a touch panel, and the display unit 82 It is also possible to take an image by touching button 2.

[0610] Note that the Camera 820 can be fitted with a separate flash unit, viewfinder, etc. Yes, it is possible. Alternatively, these may be incorporated into the enclosure 821.

[0611] Figures 36(A) to (E) show electronic devices. These electronic devices have a housing 9000 Display unit 9001, speaker 9003, operation key 9005 (power switch, or operation key (including switch), connection terminal 9006, sensor 9007 (force, displacement, position, velocity, acceleration, Angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, electric current It has the ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation. It includes (and), a microphone 9008, etc.

[0612] A display device manufactured using one aspect of the present invention can be suitably used in the display unit 9001. This allows for the manufacture of electronic devices with a high yield.

[0613] The electronic devices shown in Figures 36(A) to (E) can have various functions. For example, Functions to display various information (still images, videos, text images, etc.) on the display unit, touch panel device Functions such as displaying calendar, date or time, and various software (programs) ) Functions to control processing, wireless communication function, and various computers using wireless communication function It has the ability to connect to a network and transmit or receive various types of data using wireless communication. The function to be performed is to read the program or data recorded on the recording medium and display it on the display unit. It can have functions such as the following. Furthermore, the electronic devices shown in Figures 36(A) to (E) have the following capabilities. The functions are not limited to these, and other functions may also be present.

[0614] Figure 36(A) shows the wristwatch-type personal information terminal 9200, and Figure 36(B) shows the wristwatch-type personal information terminal These are perspective views of terminal 9201.

[0615] The portable information terminal 9200 shown in Figure 36(A) is used for mobile phone calls, email, document viewing, and document creation. various applications such as music playback, internet communication, and computer games. It can be executed. Also, the display unit 9001 has a curved display surface, and the curved The display can be shown along the display surface. Furthermore, the mobile information terminal 9200 uses a communication standard. It is possible to perform short-range wireless communication. For example, a wireless communication-enabled headset and By communicating with each other, hands-free calls are also possible. Furthermore, mobile information terminals... The 9200 has a connection terminal 9006 and can directly connect to other information terminals via a connector for data transfer. It can communicate with each other. It can also be charged via the connection terminal 9006. The charging operation may also be performed by wireless power supply without using the connection terminal 9006.

[0616] The personal digital assistant 9201 shown in Figure 36(B) is different from the personal digital assistant shown in Figure 36(A). Furthermore, the display surface of the display unit 9001 is not curved. Also, the outside of the display unit of the portable information terminal 9201 The shape is non-rectangular (circular in Figure 36(B)).

[0617] Figures 36(C) to (E) are perspective views showing a foldable portable information terminal 9202. Oh, Figure 36(C) is a perspective view of the mobile information terminal 9202 in an unfolded state, and Figure 36(D) The mobile information terminal 9202 changes from one state to the other, either unfolded or folded. This is a perspective view of an intermediate state, and Figure 36(E) shows the mobile information terminal 9202 in a folded state. This is a visual representation.

[0618] The 9202 personal digital assistant offers excellent portability when folded, and when unfolded, the seams are seamless. The wide display area without any obstructions provides excellent readability of the display. (Display unit of the portable information terminal 9202) The 9001 is supported by three housings 9000 connected by hinges 9055. By bending the two housings 9000 via the hinge 9055, the portable information terminal 9 The 202 can be reversibly transformed from an unfolded state to a folded state. For example, The portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less.

[0619] This embodiment can be combined with other embodiments as appropriate. [Examples]

[0620] In this embodiment, the results of peeling the resin layer from the fabricated substrate will be described.

[0621] The method for preparing the samples in this embodiment will be explained using Figure 37. In this embodiment, three types A sample was prepared.

[0622] First, a metal layer 19 was formed on the fabricated substrate 14 (Figure 37(A)).

[0623] A glass substrate with a thickness of approximately 0.7 mm was used for the fabricated substrate 14. As the metal layer 19, a spat A titanium film with a thickness of approximately 5 nm was deposited using the taring method.

[0624] Next, the surface of the metal layer 19 is subjected to H2O plasma treatment (Plasma 3 in Figure 37(A)). (See reference 0), a titanium oxide film, which is a metal oxide layer 20, was formed (Figure 37(B)).

[0625] The bias power for H2O plasma treatment varies depending on the sample. Specifically, the bias power - For example, 2000W (Sample 1A), 3000W (Sample 1B), and 4500W (Sample 1 The three conditions in C) were used. ICP power was 0W, pressure was 15Pa, and lower electrode temperature was 40°C. The processing time was 600 seconds, and water vapor was used as the process gas at a flow rate of 250 sccm. H2O plasma treatment was performed at room temperature.

[0626] Next, a first layer 24 was formed on the metal oxide layer 20 (Figure 37(C)). First layer 24 This was formed using a material that is photosensitive and contains a polyimide resin precursor. The film thickness after coating was approximately 2.0 μm.

[0627] Next, the first layer 24 was subjected to a heat treatment to form a resin layer 23 (Figure 37(D)). For the heat treatment, the product was baked at 480°C for 1 hour under an air atmosphere.

[0628] Next, a peelable layer 25 was formed on the resin layer 23 (Figure 37(E)). The absorptisphere 25 consists of the insulating layer 31 and insulating layer 32 (the gate insulating layer of the transistor) shown in Figure 5(E). A laminated structure was designed assuming the following: Specifically, a layer of oxidative nitride with a thickness of approximately 100 nm was placed on the resin layer 23. Silicon film, silicon nitride film with a thickness of approximately 400 nm, and silicon oxidizride film with a thickness of approximately 50 nm The films were formed in this order. These films were formed using plasma CVD at a substrate temperature of 330°C. It was formed under the following conditions.

[0629] Then, UV release tape was attached to the layer to be peeled 25 (adhesive layer 75b and in Figure 37(E)). (Equivalent to substrate 75a).

[0630] In this example, a peel test was performed on the sample to peel off the resin layer 23 from the fabricated substrate 14. For the separation test, a jig as shown in Figure 38 was used. The jig shown in Figure 38 has multiple guide rows It has a 154 and a support roller 153. The measurement method is as follows: First, on the fabricated substrate 14 The tape 151 is attached to the layer 150 which includes a pre-formed peelable layer, and a portion of the edge is peeled off. Next, attach the fabricated substrate 14 so that the tape 151 is hooked onto the support roller 153. The jig is attached so that the tape 151 and the layer 150 including the peel-off layer are perpendicular to the fabricated substrate 14. Make sure it is in the correct direction. Here, pull the tape 151 perpendicular to the fabricated substrate 14. When peeling off the layer 150 containing the peeled layer from the fabricated substrate 14 at a speed of 20 mm / min By measuring the force pulling in the vertical direction, the force required for separation can be measured. Thus, while the peeling process is underway, the fabricated substrate 14 is guided with the metal oxide layer 20 exposed. It travels along the roller 154 in the direction of its surface. Support roller 153 and guide roller 1 54 is in order to eliminate the effect of friction during the movement of the layer 150 containing the peeled layer and the fabricated substrate 14. It is rotatably mounted.

[0631] For the peel test, a small benchtop testing machine (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation was used. Adhesive tapes and adhesive seals conforming to Japanese Industrial Standards (JIS) standard number JIS Z0237 A test method was used. The sample dimensions were 126 mm x 25 mm.

[0632] Before peeling, water was supplied from the edge of the sample (see liquid supply mechanism 21 in Figure 37(F)).

[0633] Figures 39(A) to (C) show the results of sample peeling. In Figures 39(A) to (C), the solid lines indicate... The upper side is the substrate 75a side, and the lower side is the fabricated substrate 14 side. Figure 39(A) shows H2O This is the result for sample 1A with a plasma treatment bias power of 2000W. Figure 39(B) shows: This is the result for sample 1B with a bias power of 3000W. Figure 39(C) shows the bias power. This is the result for sample 1C at 4500W.

[0634] As shown in Figures 39(A) to (C), the resin layer 23 remains on the substrate 75a side, and the fabricated substrate No resin layer 23 remained on side 14. In this embodiment, the metal oxide layer 20 and the resin layer 23 It is thought that the separation was achieved at the interface.

[0635] Furthermore, the force required to peel each sample was approximately 0.24 N for sample 1A and approximately 0.22 N for sample 1B. Sample 1C had a bias power of approximately 0.16 N. From this, the bias power of the H2O plasma treatment was determined. It was found that the larger the value, the less force is required for separation.

[0636] Furthermore, instead of H2O plasma treatment, O2 plasma treatment was performed on the surface of the metal layer 19. Alternatively, a titanium oxide film, which is a metal oxide layer 20, may be formed. A sample is prepared and peeled off under these conditions. The test revealed that peeling was possible in the same way as with samples 1A to 1C. The force exerted was approximately 0.21 N.

[0637] Furthermore, the surface of the metal layer 19 is subjected to plasma treatment using a mixed gas of H2O and Ar. Alternatively, a titanium oxide film, which is a metal oxide layer 20, may be formed. A sample is prepared and peeled off under these conditions. The test revealed that peeling was possible in the same way as with samples 1A to 1C. The force exerted was approximately 0.15 N.

[0638] The conditions for plasma processing using a mixed gas of H2O and Ar are as follows: bias power of 4500W. ICP power: 0W, pressure: 15Pa, lower electrode temperature: 40°C, processing time: 600sec The process gas consists of water vapor at a flow rate of 125 sccm and argon gas at a flow rate of 125 sccm. A plasma was used. The plasma treatment was performed at room temperature.

[0639] As described above, in this embodiment, a resin was obtained from the fabricated substrate 14 using the peeling method according to one aspect of the present invention. The lipid layer 23 was successfully removed. [Examples]

[0640] In this embodiment, the results of peeling the resin layer from the fabricated substrate will be described.

[0641] Using Figure 4, the method for preparing the samples in this embodiment will be explained. In this embodiment, six types of samples were prepared. I prepared the materials.

[0642] First, a metal oxide layer 20 was formed on the fabricated substrate 14 (Figure 4(A1)).

[0643] A glass substrate with a thickness of approximately 0.7 mm was used for the fabricated substrate 14.

[0644] In sample 2A, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, A titanium film with a thickness of approximately 5 nm was deposited using the sputtering method. Subsequently, nitrogen gas and acid were used. While flowing a mixture of primary gases (580 NL / min, 20% oxygen concentration), at 450°C... A titanium oxide film was formed by baking over time.

[0645] In sample 2B, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, First, an aluminum film with a thickness of approximately 5 nm was deposited using the sputtering method. Then, An aluminum oxide film was formed by baking under the same conditions as sample 2A.

[0646] In sample 2C, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically First, an indium zinc oxide film with a thickness of approximately 5 nm is deposited using the sputtering method. Then, baking was performed under the same conditions as for sample 2A.

[0647] In sample 2D, a titanium oxide film was formed as the metal oxide layer 20. Specifically, first, A titanium film with a thickness of approximately 5 nm was deposited using the sputtering method. Subsequently, the surface of the titanium film was... A titanium oxide film was formed by applying H2O plasma treatment to the surface. The process was carried out at room temperature, with ICP power 0W, bias power 4500W, pressure 15Pa, and the bottom The electrode temperature was 40°C, the processing time was 600 seconds, and the process gas was an acid at a flow rate of 250 sccm. I used a prime element.

[0648] In sample 2E, an aluminum oxide film was formed as the metal oxide layer 20. Specifically, First, an aluminum film with a thickness of approximately 5 nm was deposited using the sputtering method. Then, By performing H2O plasma treatment on the surface of the aluminum film, the aluminum oxide film is Formed. The H2O plasma treatment conditions were the same as for sample 2D.

[0649] In sample 2F, an indium zinc oxide film was formed as the metal oxide layer 20. Specifically First, an indium zinc oxide film with a thickness of approximately 5 nm is deposited using the sputtering method. Subsequently, the surface of the indium zinc oxide film was subjected to H2O plasma treatment. The plasma treatment conditions are the same as for sample 2D.

[0650] Next, a first layer 24 was formed on the metal oxide layer 20 (Figure 4(B)). The first layer 24 is The material was formed using a photosensitive material containing a polyimide resin precursor. The film thickness after fabrication was approximately 2.0 μm.

[0651] Next, the first layer 24 was subjected to heat treatment to form a resin layer 23 (Figure 4(C)). For the heat treatment, a bake was performed at 480°C for 1 hour under an atmospheric environment.

[0652] Next, a peelable layer 25 was formed on the resin layer 23 (Figure 4(D)). Layer 25 consists of insulating layer 31 and insulating layer 32 (the gate insulating layer of the transistor) as shown in Figure 5(E). The assumed laminated structure was adopted. Specifically, a layer of oxidative nitride with a thickness of approximately 100 nm was placed on the resin layer 23. A silicon nitride film with a thickness of approximately 400 nm, and silicon oxide nitride with a thickness of approximately 50 nm. The films were formed in this order. These films were formed using plasma CVD at a substrate temperature of 330°C. It was formed by the conditions.

[0653] Then, UV release tape was attached to the peelable layer 25 (the adhesive layer 75b and base in Figure 4(D)). (Equivalent to board 75a).

[0654] In this example, a peel test was performed on the sample to peel off the resin layer 23 from the fabricated substrate 14. The release test was conducted under the same conditions as in Example 1.

[0655] Before peeling, water was supplied from the edge of the sample (see liquid supply mechanism 21 in Figure 4(E)).

[0656] Figures 40(A) to (F) show the results of sample peeling. In Figures 40(A) to (F), the solid lines indicate... The upper side is the substrate 75a side, and the lower side is the fabricated substrate 14 side. Figure 40(A) shows bake This is the result for sample 2A, which had a titanium oxide film formed by baking. Figure 40(B) shows the results for acid by baking. This is the result for sample 2B, which had an aluminum oxide film formed on it. Figure 40(C) shows indium zincate. This is the result for sample 2C, which underwent baking on an oxide film. Figure 40(D) ​​shows the results of plasma treatment of acid This is the result for sample 2D, on which a titanium dioxide film was formed. Figure 40(E) shows oxidation by plasma treatment. The results for sample 2E, which had an aluminum film formed on it, are shown in Figure 40(F). This is the result for sample 2F, which underwent plasma treatment of a physical film.

[0657] As shown in Figures 40(A) to (F), the resin layer 23 remains on the substrate 75a side, and the fabricated substrate No resin layer 23 remained on side 14. Separation occurred at the interface between the metal oxide layer 20 and the resin layer 23. It is believed that they were able to make that happen.

[0658] Furthermore, the force required to peel each sample was approximately 0.19 N for sample 2A and approximately 0.34 N for sample 2B. Sample 2C is approximately 0.22N, Sample 2D is approximately 0.21N, Sample 2E is approximately 0.27N, Sample 2F The value was approximately 0.17 N.

[0659] As described above, in this embodiment, a resin was obtained from the fabricated substrate 14 using the peeling method according to one aspect of the present invention. The lipid layer 23 was successfully removed. [Examples]

[0660] In this embodiment, the results of peeling the resin layer from the fabricated substrate will be described.

[0661] The method for preparing the sample in this embodiment will be explained using Figure 4.

[0662] First, a metal oxide layer 20 was formed on the fabricated substrate 14 (Figure 4(A1)). Fabricated substrate 14 A glass substrate with a thickness of approximately 0.7 mm was used. A titanium oxide film was used as the metal oxide layer 20. Specifically, a titanium film with a thickness of approximately 5 nm was first formed using the sputtering method. The film was deposited. Afterwards, a mixture of nitrogen and oxygen gas (580 NL / min, oxygen concentration 20%) was used. By baking at 450°C for 1 hour while flowing %), the titanium film is oxidized, and the oxide is increased. A tongue film was formed.

[0663] Next, a first layer 24 was formed on the metal oxide layer 20 (Figure 4(B)). The first layer 24 is The material was formed using a photosensitive material containing a polyimide resin precursor. The film thickness after fabrication was approximately 2.0 μm.

[0664] Next, the first layer 24 was subjected to heat treatment to form a resin layer 23 (Figure 4(C)). For the heat treatment, a bake was performed at 480°C for 1 hour under an atmospheric environment.

[0665] Next, a peelable layer 25 was formed on the resin layer 23 (Figure 4(D)). Layer 25 consists of insulating layer 31 and insulating layer 32 (the gate insulating layer of the transistor) as shown in Figure 5(E). The assumed laminated structure was adopted. Specifically, a layer of oxidative nitride with a thickness of approximately 400 nm was placed on the resin layer 23. A silicon nitride film with a thickness of approximately 400 nm, and silicon oxide nitride with a thickness of approximately 50 nm. The films were formed in this order. These films were formed using plasma CVD at a substrate temperature of 330°C. It was formed by the conditions.

[0666] Cross-section of the sample at this point (STEM (Scanning Transmission)) Electron Microscopy images are shown in Figures 41(A) and (B). Figure 41 From (A), the thickness of the resin layer 23 was found to be approximately 0.79 μm. From Figure 41(B), the metal The thickness of the oxide layer 20 was found to be approximately 19.2 nm. Cross-sectional observation confirmed the presence of a titanium film. It wasn't there. Therefore, it's thought that the titanium film was completely oxidized and turned into a titanium oxide film.

[0667] Then, UV release tape was attached to the peelable layer 25 (the adhesive layer 75b and base in Figure 4(D)). (Equivalent to board 75a).

[0668] A peel test was performed on the sample of this embodiment to remove the resin layer 23 from the fabricated substrate 14.

[0669] For the peel test, a small benchtop testing machine (EZ-TEST EZ-S-50N) manufactured by Shimadzu Corporation was used. Adhesive tapes and adhesive seals conforming to Japanese Industrial Standards (JIS) standard number JIS Z0237 A test method was used. The sample dimensions were 126 mm x 25 mm.

[0670] Figure 42(A) shows the results of the sample peeling. In Figure 42(A), the area above the solid line is substrate 7. This is side 5a, and the lower side is the fabricated substrate 14 side.

[0671] As shown in Figure 42(A), the resin layer 23 remains on the substrate 75a side, and on the fabricated substrate 14 side The resin layer 23 was no longer present.

[0672] Figure 42(B) shows a cross-sectional STEM image of the fabricated substrate 14. From Figure 42(B), the metal acid The thickness of the ionized layer 20 was found to be approximately 12.6 nm. Cross-sectional observation confirmed the presence of the resin layer 23. It was not found. The layer on the metal oxide layer 20 is a film formed for STEM observation.

[0673] X-ray photoelectron spectroscopy (XPS) was used to examine the delamination surface on the substrate 75a side. Compositional analysis using lectron spectroscopy revealed that Ti is Not detected.

[0674] These results indicate that separation was achieved at the interface between the metal oxide layer 20 and the resin layer 23. It's possible.

[0675] Furthermore, depending on the conditions of the heat treatment performed on the first layer 24, the fabricated substrate 14 and the resin layer 23 may be separated. It was sometimes difficult to separate them. For example, when separating nitrogen gas and oxygen gas from the first layer 24... While flowing a mixed gas (580 NL / min, 20% oxygen concentration), heat at 450°C for 1 hour. If the above peel test is performed, the fabricated substrate 14 and the resin layer 23 cannot be separated. Something bad happened.

[0676] Therefore, the first layer 24 is heated in an air atmosphere to form the resin layer 23, It is thought that the substrate 14 and the resin layer 23 can be easily separated. For example, heating in an atmospheric environment As a result, compared to heating while flowing gas, the resin layer 23 in the metal oxide layer 20 It is thought that moisture can be easily retained in the middle, or at the interface between the metal oxide layer 20 and the resin layer 23. It can be obtained.

[0677] Furthermore, by heating the first layer 24 at a sufficiently high temperature to form the resin layer 23, the fabricated substrate is formed. It is thought that 14 and the resin layer 23 can be easily separated. This allows the metal oxide layer 20 and It is thought that this can reduce the adhesion with the resin layer 23.

[0678] As described above, in this embodiment, a resin was obtained from the fabricated substrate 14 using the peeling method according to one aspect of the present invention. The lipid layer 23 was successfully removed. [Examples]

[0679] In this embodiment, the results of peeling the resin layer from the fabricated substrate will be described.

[0680] The method for preparing the sample in this embodiment will be explained using Figures 5 and 6. It is manufactured using a part of the manufacturing process for EL display devices, and is made from the manufactured substrate 14 shown in Figure 6(A) It has a laminated structure up to an insulating layer 35.

[0681] First, a metal oxide layer 20 was formed on the fabricated substrate 14 (Figure 5(A)). A glass substrate with a thickness of approximately 0.7 mm was used. A titanium oxide film was used for the metal oxide layer 20. Specifically, first, a titanium film with a thickness of approximately 5 nm was deposited using the sputtering method. Then, a mixture of nitrogen and oxygen gas (580 NL / min, oxygen concentration 20%) was used. By baking at 450°C for 1 hour while the mixture is flowing, the titanium film is oxidized, and the titanium oxide film is formed. This was formed. Furthermore, when the contact angle between the titanium oxide film prepared by this method and water was measured, It was approximately 46°.

[0682] Next, a first layer 24 was formed on the metal oxide layer 20 (Figure 5(B)). The first layer 24 is The material was formed using a photosensitive material containing a polyimide resin precursor. The film thickness after fabrication was approximately 2.0 μm.

[0683] Next, the first layer 24 is processed into an island shape, and then a heat treatment is performed to form the resin layer 23. (Figure 5(C)). For the heat treatment, baking was performed at 480°C for 1 hour in an air atmosphere. .

[0684] Next, a silicon oxide-nitride film with a thickness of approximately 400 nm is formed on the resin layer 23 as an insulating layer 31. The insulating layer 31 was formed using plasma CVD at a substrate temperature of 330°C. .

[0685] Next, a transistor 40 was formed on the insulating layer 31 (Figure 5(E)). In this embodiment, A transistor with an oxide semiconductor in the channel formation region was fabricated.

[0686] Next, an insulating layer 33 was formed to cover the transistor 40. The insulating layer 33 has a thickness of approximately 400 nm. The insulating layer 33 has a silicon oxide nitride film and a silicon nitride film with a thickness of approximately 100 nm. The material was formed using plasma CVD at a substrate temperature of 330°C.

[0687] Next, an acrylic film with a thickness of approximately 2.0 μm was formed on the insulating layer 33 as an insulating layer 34.

[0688] Next, on the insulating layer 34, a conductive layer 61 is made of titanium film with a thickness of approximately 50 nm and a thickness of approximately 200 nm. A 3-m aluminum film and a titanium film with a thickness of approximately 5 nm were formed in this order.

[0689] Next, an insulating layer 35 was formed to cover the edges of the conductive layer 61. The insulating layer 35 had a thickness of approximately 1.0 μm. A polyimide film of m was used.

[0690] Subsequently, a polyimide layer (not shown) with a thickness of approximately 2.0 μm is placed on the insulating layer 35 as a spacer. A membrane was formed.

[0691] Then, UV release tape was applied to the peelable layer 25 (corresponding to the protective layer 75 in Figure 6(A)). .

[0692] In this example, a peel test was performed on the sample to peel off the resin layer 23 from the fabricated substrate 14. The method for the release test is the same as in Example 1.

[0693] The peel test was performed on 10 samples. Of the 10 samples, 5 samples had water at the peel interface. The sample was detached after injecting water, and the remaining five samples were detached without injecting water.

[0694] Figure 43(A) shows the results of the sample detached by injecting water. Figure 43(B) shows the results of the sample detached by injecting water. The peeling results of the sample that was peeled without insertion are shown. In Figures 43(A) and (B), the area above the solid line The side with the protective layer 75 is the side with the fabricated substrate 14 underneath.

[0695] As shown in Figures 43(A) and (B), the resin layer 23 remains on the protective layer 75 side, and the fabricated substrate Almost no resin layer 23 remained on side 14.

[0696] The average force required to separate the five samples after injecting water was approximately 0.172 N. The average force required to detach the five samples without injecting water was approximately 0.195 N. This suggests that injecting water into the delamination interface reduces the force required for delamination. .

[0697] The contact angle between the titanium oxide film formed in this example and water was a small value of approximately 46°. By using a membrane with high tension (high wettability), the effect of water injection is enhanced, and the force required for delamination is reduced. It is believed that the reduction was achieved.

[0698] As described above, in this embodiment, a resin was obtained from the fabricated substrate 14 using the peeling method according to one aspect of the present invention. The lipid layer 23 was successfully removed. [Examples]

[0699] In this embodiment, the results of peeling the resin layer from the fabricated substrate will be described.

[0700] The method for preparing the sample in this embodiment will be explained using Figure 4.

[0701] First, a metal oxide layer 20 was formed on the fabricated substrate 14 (Figure 4(A1)). Fabricated substrate 14 A glass substrate with a thickness of approximately 0.7 mm was used. As the metal oxide layer 20, tungsten oxide was used. A tungsten film was formed. Specifically, a tungsten film was first formed using the sputtering method. A film was formed. In this example, a sample with a tungsten film thickness of approximately 5 nm and a sample with a thickness of approximately 10 nm were used. Two types were prepared. Subsequently, a mixture of nitrogen gas and oxygen gas (580 NL / min, oxygen) was prepared. By baking at 450°C for 1 hour while flowing a 20% concentration solution, a tungsten film is created. It oxidized and formed a tungsten oxide film.

[0702] Next, a first layer 24 was formed on the metal oxide layer 20 (Figure 4(B)). The first layer 24 is It was formed using a material containing a non-photosensitive, soluble polyimide resin. When this material was applied... The film thickness was approximately 2.0 μm.

[0703] Next, the first layer 24 was subjected to heat treatment to form a resin layer 23 (Figure 4(C)). For the heat treatment, a mixture of nitrogen and oxygen gases (580 NL / min, oxygen concentration 20%) was used. After baking at 180°C for 30 minutes while flowing the mixture, 4 The product was baked at 0°C for 1 hour.

[0704] Next, a peelable layer 25 was formed on the resin layer 23 (Figure 4(D)). Layer 25 consists of insulating layer 31 and insulating layer 32 (the gate insulating layer of the transistor) as shown in Figure 5(E). The assumed laminated structure was adopted. Specifically, a layer of oxidative nitride with a thickness of approximately 100 nm was placed on the resin layer 23. A silicon nitride film with a thickness of approximately 400 nm, and silicon oxide nitride with a thickness of approximately 50 nm. The films were formed in this order. These films were formed using plasma CVD at a substrate temperature of 330°C. It was formed by the conditions.

[0705] Cross-sectional STEM of the sample (a sample with a tungsten film approximately 5 nm thick) at this point. The photographs are shown in Figures 44(A) and (B). From Figure 44(A), the thickness of the resin layer 23 is approximately 1.0 It was found to be 1 μm. From Figure 44(B), the thickness of the metal oxide layer 20 was found to be approximately 23.8 nm. It was not possible to confirm the presence of a tungsten film in cross-sectional observation. It is thought that all of it has oxidized and formed a tungsten oxide film.

[0706] Then, UV release tape was attached to the peelable layer 25 (the adhesive layer 75b and base in Figure 4(D)). (Equivalent to board 75a).

[0707] In this example, a peel test was performed on the sample to peel off the resin layer 23 from the fabricated substrate 14. The method for the release test is the same as in Example 1.

[0708] Figures 45(A) and (B) show the results of sample peeling. Figure 45(A) shows a tan with a thickness of approximately 5 nm. The results are for samples with a tungsten film formed on them. Figure 45(B) shows a tungsten film with a thickness of approximately 10 nm. These are the results for samples with a film formed on them. In Figures 45(A) and (B), the area above the solid line is the substrate. This is the 75a side, and the lower side is the fabricated substrate 14 side.

[0709] As shown in Figures 45(A) and (B), the resin layer 23 remains on the substrate 75a side, and the fabricated substrate The resin layer 23 was not present on side 14.

[0710] Figure 45(C) shows the side of the fabricated substrate 14 in a sample on which a tungsten film with a thickness of approximately 5 nm has been formed. A cross-sectional STEM image is shown. From Figure 45(C), the thickness of the metal oxide layer 20 is approximately 21.8 It was determined to be nm. In cross-sectional observation, the resin layer 23 could not be confirmed. The layer is a membrane formed for STEM observation.

[0711] When we checked for conductivity between the peeled surface on substrate 75a and the peeled surface on the fabricated substrate 14, Electrical conductivity was established at the peeled surface on the substrate 14 side.

[0712] These results indicate that separation was achieved at the interface between the metal oxide layer 20 and the resin layer 23. It's possible.

[0713] As described above, in this embodiment, a resin was obtained from the fabricated substrate 14 using the peeling method according to one aspect of the present invention. The lipid layer 23 was successfully removed. [Examples]

[0714] This embodiment describes the results of fabricating a display device using a peeling method according to one aspect of the present invention. I will reveal it.

[0715] The display device 300B fabricated in this embodiment is different from the display device 300A shown in Figures 24 and 25. The common configuration is in the part labeled "ku". Figure 46 shows the F of the display device 300B manufactured in this embodiment. A portion of the area including PC372, a portion of the area including circuit 364, and a portion of the area including display unit 362 An example of a cross-section when a portion of the region is cut is shown. The display device 300B shown in Figure 46 is The main differences are that it does not have a colored layer 134 and an insulating layer 194, and the EL layer 192 is painted in a different color scheme. It differs from the display device 300A in that it is equipped with [specific features / features].

[0716] Details of the display device 300B are described below. The size of the display unit 362 is 4.38 inches diagonally, effective The pixel count is 768 x 1024, and the resolution is 292 ppi. Display device 300B is a dummy It has a built-in Lutiplexer (DeMUX) that functions as a source driver. Also, The 300B display device also has a built-in scan driver.

[0717] The channel formation region of a transistor contains metal oxides, specifically In-Ga-Zn oxides. They used an object.

[0718] The liquid crystal element 180 uses a reflective twisted ECB mode. The reflected light is taken out of the display device 300B through the colored layer 131 (color filter). The aperture ratio of the liquid crystal element 180 is 76%.

[0719] The light-emitting element 170 uses an organic EL element. The light-emitting element 170 has a bottom emission structure. The structure is such that the light from the light-emitting element 170 is absorbed into the outside of the display device 300B through the colored layer 131. It is emitted. The light-emitting element 170 has an EL layer 192 that is painted separately for each sub-pixel (RGB). The aperture ratio of the light-emitting element 170 is 3.9%.

[0720] Regarding the process of applying the peeling method according to one embodiment of the present invention in the manufacturing process of the display device 300B: Let me explain. In Figure 4(D), a glass substrate is used as the fabricated substrate 14, and the metal oxide layer 2 A titanium oxide film was used as layer 0, and a polyimide film was used as the resin layer 23. The peelable layer 25 and Then, after forming an inorganic insulating layer on the resin layer 23, electricity is discharged from the electrode 311a onto the inorganic insulating layer. A laminated structure up to pole 193 (see Figure 46) was formed. The adhesive layer 142 in Figure 46 is the adhesive layer 7 This corresponds to 5b. Substrate 351 in Figure 46 corresponds to substrate 75a. And, one aspect of the present invention The metal oxide layer 20 and the resin layer 23 were separated using a specific peeling method.

[0721] Subsequently, the resin layer 23 and inorganic insulating layer remaining on the substrate 351 side were removed. An alignment film 133a was formed on the electrode 311a. A colored layer 131 (and shielding) was formed on the substrate 361. A laminated structure was formed from the optical layer 132) to the alignment layer 133b. Then, the substrate 351 and the substrate 361 and the liquid crystal layer 112 were bonded together with the liquid crystal layer 112 sandwiched between them.

[0722] Figures 47(A) and (B) show photographs of the display device 300B. A method of peeling according to one embodiment of the present invention We were able to manufacture a display device using the law, and achieve full display without any major problems. This was confirmed. [Examples]

[0723] The following describes in detail the items shown in Table 2 in the peeling method according to one embodiment of the present invention.

[0724] [Table 2]

[0725] As shown in Example 1, H2O plasma treatment is preferred as the treatment for the substrate layer. Furthermore, as the material for the resin layer, a material that is photosensitive and contains a polyimide resin precursor is preferable. Yes, it is possible. As for the heating conditions for forming the resin layer, baking at 480°C in an atmospheric environment is preferable. That is the case.

[0726] When the resin layer material is applied, areas where the material is unevenly applied occur, such as around the outer edge of the substrate. This can happen. It is preferable that such unwanted parts can be easily removed before the resin layer hardens. It is difficult. For example, it can be removed using organic solvents such as paint thinner. Therefore, it may react with thinner, causing clouding, gelation, or solidification. The resin layer material used in Example 1, etc., dissolves in organic solvents such as paint thinner, thus hardening the resin layer. Unnecessary parts can be easily removed before processing.

[0727] Using a photosensitive material is preferable because it facilitates the processing of the resin layer. The resin layer can be processed by exposure and development. Formation of the resist mask is not possible. Because it is essential, the manufacturing process can be shortened.

[0728] In the process of irradiating the entire surface of the resin layer through the fabricated substrate with laser light, the back side of the fabricated substrate (resin If there is debris on the side opposite to the side where the sebum layer is formed, light will not be properly irradiated, resulting in poor peeling. They can connect. Also, if the laser power is too strong for the resin layer, the resin layer will be altered. This can happen. For example, soot may be generated. In one embodiment of the present invention, the peeling method This process does not involve irradiating the back of the fabricated substrate with light. Therefore, it is not affected by the dust. It does not shave, and the resin layer is not damaged by laser light. In one aspect of the present invention, heating treatment This improves the peelability of the resin layer. Even if foreign matter is attached to the substrate, uneven heating will not occur in the resin layer. Because it is difficult to separate, the yield in the process of separating the substrate and the resin layer does not decrease easily. As such, the thermal conductivity of titanium dioxide is approximately 6.3 W / m·K, and the thermal conductivity of polyimide is It is approximately 0.18 W / m·K.

[0729] As shown in Example 1, the peeling interface is the interface between the metal oxide layer and the resin layer. Therefore, Therefore, no resin layer remains on the fabricated substrate after peeling.

[0730] When the resin layer is removed after peeling, the through electrode can be exposed. The resin layer is assembled It is preferable to remove it by [method]. In order to remove the resin layer, the finished device is made of resin layer It is not affected by the color.

[0731] If the resin layer is not removed after peeling, it is preferable to expose the through-electrode by peeling. During layer formation, an opening is made in the resin layer, and a through electrode is formed within the opening. Then, by peeling... The resin layer and through-electrode are exposed. A material with low adhesion to the fabricated substrate is used for the through-electrode. It is preferable that this is present. Furthermore, a smaller contact area between the through-electrode and the fabricated substrate is preferable. Because it uses photosensitive materials, it is possible to form openings in the resin layer using exposure technology. Cut. At this time, the shape of the opening will be tapered. When using a non-photosensitive material, For processing the resin layer, ashing, dry etching, etc., can be used. The shape of the side wall of the opening in the resin layer is nearly vertical. Because the resin layer is not removed, the finished product is The device is affected by the color of the resin layer. To suppress the decrease in light extraction efficiency, unnecessary It is preferable not to provide a resin layer in that area.

[0732] When applying the peeling method according to one aspect of the present invention, the force required for peeling is, for example, about 0.13 N. be. [Explanation of Symbols]

[0733] 10A display device 10B display device 10C display device 13 Adhesive layer 14 Fabricated substrate 19 Metal layer 20 Metal oxide layer 21 Liquid supply mechanism 22 circuit boards 23 Resin layer 23a Resin layer 23b Resin layer 24. First layer 25 Layer to be peeled 28 Adhesive layer 29 circuit boards 30 Plasma 31 Insulating layer 31a Insulating layer 31b Insulating layer 32 Insulating layer 33 Insulating layer 34 Insulating layer 35 Insulating layer 40 transistors 41 Conductive layer 43a Conductive layer 43b Conductive layer 43c conductive layer 44 Metal oxide layer 45 Conductive layer 49 Transistors 56 Laminate 56a remainder 56b One surface layer 59 Laminate 60 light-emitting elements 61. Conductive layer 62 EL layer 63 Conductive layer 64 cuts 65 devices 66 Laser light 67 Irradiation area 74 Insulating layer 75 Protective layer 75a substrate 75b Adhesive layer 76 connectors 80 transistors 81 Conductive layer 82 Insulating layer 83 Metal oxide layer 84 Insulating layer 85 Conductive layer 86a Conductive layer 86b Conductive layer 86c conductive layer 91 Fabricated substrate 92 Metal oxide layer 93 Resin layer 95 Insulating layer 96 Bulkhead 97 Colored layer 98 Light blocking layer 99 Adhesive layer 112 liquid crystal layer 113 Electrode 115 Insulating layer 117 Insulating layer 121 Insulating layer 131 Colored layer 132 Light blocking layer 133a Orientation film 133b Alignment film 134 Colored layer 135 Polarizing plate 140 transistors 141 Adhesive layer 142 Adhesive layer 150 Layer containing the peeled layer 151 Tape 153 Support Roller 154 Guide roller 162a Channel region 162b Low resistance region 163 Insulating layer 164 Conductive layer 165 Insulating layer 166 Insulating layer 167a conductive layer 167b Conductive layer 170 light-emitting elements 180 liquid crystal elements 191 Electrode 192 EL layer 193 Electrode 194 Insulating layer 201 Transistors 203 Transistors 204 Connection part 205 transistors 206 transistors 207 Connection part 211 Insulating layer 212 Insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 216 Insulating layer 217 Insulating layer 220 Insulating layer 220a insulating layer 220b Insulating layer 221a Conductive layer 221b Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive layer 224 Conductive layer 225 Insulating layer 226 Coating membrane 227 Lens 228 Conductive layer 231 Semiconductor layer 232 Insulating layer 233 Diffusion film 234a conductive layer 234b Conductive layer 234c insulating layer 234d insulating layer 235 circuit boards 242 Connecting Layer 243 Connectors 252 Connection part 300A display device 300B display device 310A Input / Output Device 310B I / O device 311a electrode 311b electrode 311c electrode 351 circuit board 361 circuit boards 362 Display section 364 circuits 365 Wiring 372 FPC 373 IC 381 Display section 382 Drive Circuit Section 451 Aperture 600 Tapes 601 Support 602 Tape Reel 604 Directional change roller 606 Pressure roller 606a Cylinder 606b Cylinder 607 Directional change roller 609 Carrier Plate 613 Reels 614 Drying mechanism 617 Laura 620 Ionizer 631 Guide Roller 632 Guide Roller 633 Guide Roller 634 Guide Roller 639 Ionizer 641 Circuit Board Load Cassette 642 Circuit Board Unload Cassette 643 Conveyor roller 644 Conveyor Roller 645 Conveyor Roller 659 Liquid supply mechanism 665 Guide Roller 666 Guide Roller 670 Separation Tape 671 Support 672 Tape Reels 673 Reels 674 Guide Roller 675 Pressure roller 676 Directional Roller 677 Guide roller 678 Guide Roller 679 Guide roller 683 Reels 800 Mobile Information Terminals 801 cabinet 802 cabinet 803 Display section 805 Hinge section 810 Mobile Information Terminal 811 cabinet 812 Display section 813 Operation Buttons 814 External connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 cabinet 822 Display section 823 Operation Buttons 824 Shutter button 826 Lens 8000 Display Module 8001 Top cover 8002 Lower cover 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery 8015 Light-emitting part 8016 Light receiving section 8017a Light guiding section 8017b Light guiding part 8018 light 9000 cabinets 9001 Display section 9003 Speaker 9005 Operation Keys 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hinge 9200 Mobile Information Terminal 9201 Mobile Information Terminal 9202 Mobile Information Terminal

Claims

1. A metal layer is formed on a substrate, The surface of the metal layer is subjected to plasma treatment in an atmosphere containing water vapor. A resin layer is formed in contact with the aforementioned metal layer. An insulating layer is formed in contact with the aforementioned resin layer. A transistor having an oxide semiconductor containing indium in the channel formation region is formed above the insulating layer. The metal layer and the resin layer are separated, The insulating layer has a silicon nitride film, a silicon oxide nitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film. A method for manufacturing a semiconductor device, wherein the transistor is formed in a position that overlaps with the resin layer via the insulating layer.

2. In Claim 1, A method for manufacturing a semiconductor device, wherein the step of separating the metal layer and the resin layer is performed while supplying a liquid to the separation interface.

Images