Integrated process flow for hybrid bonding

Abstract

A process flow for bonding a die to a substrate incorporates defect risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow can include a radiation process on the component substrate to weaken an adhesive bond of the die from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean the die bonding side, an eject and pick process after performing the first wet clean process to remove the die from the component substrate for bonding to the substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean the substrate bonding side of the substrate, and a hybrid bonding process to bond the die bonding side of the die to the substrate bonding side of the substrate.

Description

Technical Field

[0001] Embodiments of the present principle generally relate to semiconductor processing of semiconductor substrates.

Background Art

[0002] Dies are attached to substrates using a bonding process. When a die has surface features that include a metal material that will connect with other metal materials on the substrate, this process is known as hybrid bonding by bonding two or more types of materials. To enhance the bond or attraction of the dielectric material between the die and the substrate, the die and the substrate are subjected to a complex preparation process prior to the bonding process. As the preparation process flow becomes complex, in addition to the time required for preparation becoming longer, the number of required process chambers increases, resulting in increased maintenance work, which directly affects the bonding yield. In some cases, this process may also increase the risk of defects by exposing the substrate to an additional environment where particles may deposit on the substrate.

[0003] Therefore, the inventors have provided an improved hybrid bonding process flow that reduces the risk of defects while reducing the bonding cost and improving the bonding throughput.

Summary of the Invention

[0004] A method for improving a hybrid bonding process flow is provided herein.

[0005] In some embodiments, a method for bonding a die to a substrate may include the steps of: performing a radiation process on a component substrate having multiple dies to weaken the adhesive bonding of the multiple dies from the surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; performing an eject and pick process after the first wet cleaning process to remove at least one of the multiple dies from the component substrate for bonding to the substrate; performing a plasma activation process on the substrate; performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the multiple dies to the substrate bonding surface of the substrate.

[0006] In some embodiments, a hybrid bonding tool for bonding dies to a substrate comprises at least one radiation chamber, at least one wet cleaning chamber, at least one plasma activation chamber, at least one hybrid bonding chamber, and a controller for the hybrid bonding tool, comprising: a radiation process in at least one radiation chamber on a component substrate having multiple dies to weaken the adhesive bonding of multiple dies from the surface of the component substrate; a first wet cleaning process in at least one wet cleaning chamber on the component substrate after the radiation process to clean at least one die bonding surface; and removing at least one of the multiple dies from the component substrate for bonding to the substrate. The system may include a controller configured to bond dies to a substrate by performing an eject and pick process in at least one hybrid bonding chamber after performing a first wet cleaning process for removal, a plasma activation process in at least one plasma activation chamber for the substrate, a second wet cleaning process in at least one wet cleaning chamber after the plasma activation process for the substrate bonding surface of the substrate, and a hybrid bonding process in at least one hybrid bonding chamber for bonding at least one die bonding surface of at least one of a plurality of dies to the substrate bonding surface of the substrate.

[0007] In some embodiments, the method includes a non-temporary computer-readable medium storing instructions that, when executed, cause the execution of a method for bonding dies to a wafer, the method comprising: performing a radiation process on a component substrate having a plurality of dies to weaken the adhesive bonding of the plurality of dies from the surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; performing an eject and pick process after the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate; performing a plasma activation process on the substrate; performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate.

[0008] Other embodiments and further embodiments are disclosed below.

[0009] Embodiments of the present principle, briefly summarized above and described in more detail below, can be understood by referring to exemplary embodiments of the principle shown in the accompanying drawings. However, the accompanying drawings show only typical embodiments of the present principle and should not be considered limiting in scope, as the principle may accept other equally effective embodiments. [Brief explanation of the drawing]

[0010] [Figure 1] This figure shows the process flow for hybrid bonding according to some embodiments of this principle. [Figure 2] This figure shows a process flow for hydration-free hybrid bonding according to some embodiments of this principle. [Figure 3]This figure shows a process flow for hybrid bonding without degassing of the component substrate, according to some embodiments of this principle. [Figure 4] This figure shows a process flow for hybrid bonding with substrate activation only, according to some embodiments of this principle. [Figure 5] This figure shows a method for hydration-free hybrid bonding according to some embodiments of this principle. [Figure 6] This figure shows a method for hybrid bonding without degassing of the component substrate, according to some embodiments of this principle. [Figure 7] This figure shows a method for hybrid bonding accompanied only by substrate activation, according to some embodiments of this principle. [Figure 8] This is an isometric view of the bonding surface of the die and substrate according to some embodiments of this principle. [Figure 9] This is a schematic top view of a multi-chamber processing tool for bonding a die to a substrate, based on one embodiment of this principle. [Modes for carrying out the invention]

[0011] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings, where possible. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be incorporated into other embodiments for the benefit of the latter without further detail.

[0012] This method provides an overall performance improvement in hybrid bonding process flows by reducing the risk of defects and improving bonding throughput. The method is optimized for integrated hybrid bonding tools with onboard auxiliary process chambers. Typical techniques for improving bonding focus on material selection, process chamber design, and / or chamber processing conditions. This principle-based method employs an optimized alternative processing flow for better bonding performance and cost reduction, based on the use of an integrated cluster hybrid bonding tool for overall process control of the bonding process.

[0013] Integrated cluster hybrid bonding tools, such as the multi-chamber processing tool shown in Figure 9 (described later), provide multiple processing chambers or stations within a controlled environment. The controlled environment allows for processing within individual chambers and movement of substrates between chambers without the risk of contamination from exposure to undesirable environments that could cause oxidation of the material on the substrate, and / or the deposition of fine particles on the substrate that could cause damage and / or impair performance. Figure 1 shows an example of a first integrated tool bonding process flow 100 for hybrid bonding. In the bonding process, both the die (component substrate) and the substrate to which the die is bonded are prepared before bonding to improve bonding performance. In some cases, the component substrate 102 can be processed in parallel with, before, or after, the substrate 118 to which the die from the component substrate 102 is bonded.

[0014] The component substrate 102 may undergo other processes prior to the hybrid bonding process. These other processes may include upstream processes such as patterning, chemical mechanical polishing (CMP), back grinding, and dicing. In some embodiments, for example, the die can be separated (unified) and held together on the back side by a dicing tape to create the component substrate 102. In some embodiments, the die can be reconfigured (molded) on a carrier wafer to form a component substrate 102 from which the die is selected for bonding. In the first integrated tool bonding process flow 100, the component substrate 102 undergoes a first wet cleaning process 104 and a degassing process 106 to help remove moisture from the component substrate 102. The component substrate 102 is then subjected to a first plasma activation process 108 to enhance bonding attractiveness, and then to a first hydration process 110. The component substrate 102 is then subjected to a radiation process 112 (e.g., UV radiation) to loosen the adhesive bond that holds the die to the component substrate 102 before bonding.

[0015] In some embodiments, the substrate 118 may undergo other processes before the bonding process flow. Depending on the process flow and use case, the substrate 118 may or may not have a silicon underlayer, or it may be a silicon wafer with glass support. The substrate 118 may also have dies pre-stacked on the substrate 118. The substrate 118 is processed before, simultaneously with, or after the processing of the component substrate 102. The substrate 118 first undergoes a second wet cleaning process 120, and then a second plasma activation process 122. The substrate then undergoes a second hydration process 124 in preparation for bonding. Bonding is then achieved by subjecting the component substrate 102 to an ejection and picking process 114, which allows for the selection and inversion of dies in preparation for bonding. In the bonding process 116, the dies are placed on the substrate 118 and bonded to the substrate 118 to obtain a substrate 126 in which the die and substrate (or chip and substrate) are bonded. A substrate 126 bonded to a die can have multiple dies bonded to its surface during one or more bonding sessions. Figure 8 is an isometric view 800 showing a die 802 from a component substrate 102 that has been ejected / inverted and bonded to the substrate bonding surface 806 of substrate 118. When the die 802 is mounted on the component substrate 102, the top surface of the die 802 is the die bonding surface 804. When the die 802 is inverted (808), the bottom surface of the die 802 becomes the die bonding surface 804. During bonding 810, the die bonding surface 804 and the substrate bonding surface 806 can be brought into contact and bonded to each other. Bonding performance is affected by parameters such as bonding surface contamination, bonding pressure, and / or bonding temperature.

[0016] The inventors observed that while the first integrated tool bonding process flow 100 enables acceptable bonding between the die and the substrate, some of the processes involved increase the risk of defects and promote a decrease in bonding throughput. The inventors found that bonding performance can be improved and bonding throughput can be improved simultaneously by eliminating risky processes. For example, in the second integrated tool bonding process flow 200, the component substrate 102 first undergoes a radiation process 112 before undergoing a degassing process 106. Then, the component substrate 102 undergoes a first plasma activation process 108 and then a first wet cleaning process 104 before being subjected to an ejection and picking process 114. The substrate 118 undergoes a second plasma activation process 122 and a second wet cleaning process 120 in preparation for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118 to obtain a substrate 126 with the die and substrate bonded.

[0017] The inventors have further discovered that bonding performance and bonding throughput can be further improved by eliminating additional risky processes. For example, in the third integrated tool bonding process flow 300, the component substrate 102 first undergoes a radiation process 112 before undergoing a first plasma activation process 108. Subsequently, the component substrate 102 undergoes a first wet cleaning process 104 before undergoing an ejection and picking process 114. The substrate 118 undergoes a second plasma activation process 122 and then a second wet cleaning process 120 in preparation for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118 to obtain a substrate 126 with the die and substrate bonded together.

[0018] The inventors also found that by further eliminating risky processes, bonding performance is further improved, and bonding throughput is also increased to a higher level. For example, in the fourth integrated tool bonding process flow 400, the component substrate 102 first undergoes a radiation process 112 before undergoing a first wet cleaning process 104. The component substrate 102 is then subjected to an ejection and picking process 114. The substrate 118 undergoes a second plasma activation process 122 and then a second wet cleaning process 120 in preparation for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118 to obtain a substrate 126 with the die and substrate bonded together.

[0019] Figure 5 shows Method 500 for hybrid bonding in an integrated tool without hydration, according to some embodiments. Method 500 is based on the second integrated tool process flow shown in Figure 2. The hydration process is eliminated in both the component substrate processing flow and the substrate processing flow. In block 502, a radiation process is performed on the component substrate. The component substrate may be a tape frame substrate or a carrier having a reconfigured die (molded die) used to support and transport the die for processing in the integrated bonding tool. The radiation process may be, for example, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the die bond to the component substrate so that ejection and picking processes can be performed in later stages, but this weakened die bond is sufficient to hold the die in place for other processes up to the ejection and picking process stage. In block 504, a degassing process is performed on the component substrate. The degassing process may include heating the component substrate to a temperature sufficient to allow for moisture removal and gas release from the component substrate before any plasma processing. In block 506, a plasma activation process is performed on the component substrate. Plasma activation facilitates the preparation of the die bonding surface on the component substrate for bonding. Generally, plasma activation has a limited duration during which it remains effective for bonding. In some cases, plasma activation lasts for approximately 7 to 20 hours before reactivation is required.

[0020] In block 508, a wet cleaning process is performed on the component substrate to clean the die bonding surface prior to bonding. The cleaner the bonding surface, the higher the bonding strength. In block 510, an eject and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process can also include inverting the die prior to bonding (see, for example, FIG. 8). Before, after, or simultaneously with the processing of the component substrate (blocks 502-508), the substrate to which the die is to be bonded is also processed. In block 514, a plasma activation process is performed on the substrate. Plasma activation facilitates preparing the bonding surface of the substrate for bonding. Generally, in plasma activation, the duration for which the plasma activation maintains a state effective for bonding is limited. In some cases, the plasma activation persists for about 7 hours to about 20 hours before reactivation is required. In block 516, a wet cleaning process is performed on the substrate to clean the substrate bonding surface prior to bonding. The cleaner the bonding surface, the higher the bonding strength. In block 512, the selected die is placed on the substrate to bond with the substrate in a hybrid bonding process. Hybrid bonding is a bonding in which at least two different materials are bonded to each other. For example, the dielectric material of the die and the copper interconnects of the die are bonded to the dielectric material of the substrate and the copper interconnects on the substrate. Generally, when the dielectric surfaces of the die and the substrate come into contact, those dielectric surfaces bond to each other. Subsequently, a subsequent annealing process can be used on the bonded die and substrate to expand the copper of the copper interconnects so that the copper interconnects of the die and the substrate flow together and bond.

[0021] Figure 6 shows Method 600 for hybrid bonding in an integrated tool, without hydration or degassing of the component substrate, according to some embodiments. Method 600 is based on the third integrated tool process flow shown in Figure 3. Hydration is eliminated in both the component substrate processing flow and the substrate processing flow, as is the degassing process of the component substrate. Since wet cleaning is not performed before the plasma process, the degassing process for removing moisture is removed from the flow because it is less effective in the bonding flow. In block 602, a radiation process is performed on the component substrate. The component substrate may be a tape frame substrate or a carrier with a reconfigured die (molded die) used to support and transport the die for processing in the integrated bonding tool. The radiation process may be, for example, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the die bond to the component substrate to allow for ejection and picking processes in later stages, but the weakened die bond is sufficient to hold the die in place for other processes up to the ejection and picking process stage.

[0022] In block 604, a plasma activation process is performed on the component substrate. Plasma activation facilitates the preparation of the die bonding surface on the component substrate for bonding. Generally, plasma activation has a limited duration during which it remains effective for bonding. In some cases, plasma activation lasts for approximately 7 to 20 hours before reactivation is required. In block 606, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the stronger the bonding. In block 608, an ejection and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process may also include inverting the die before bonding (see, for example, Figure 8). Before, after, or simultaneously with the processing of the component substrate (blocks 602-606), the substrate to which the die will be bonded is also processed. In block 612, a plasma activation process is performed on the substrate. Plasma activation facilitates the preparation of the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration during which it remains effective for bonding. In some cases, plasma activation lasts for approximately 7 to 20 hours before reactivation is required. In block 614, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 610, the selected die is placed on the substrate for bonding in the hybrid bonding process. A subsequent annealing process can then be used on the bonded die and substrate.

[0023] FIG. 7 is a method 700 for hybrid bonding in an integration tool involving only substrate activation, according to some embodiments. Method 700 is based on the fourth integration tool process flow shown in FIG. 4. The hydration process is eliminated in both the processing flow of the component substrate and the processing flow of the substrate, and the degassing process and the plasma activation process of the component substrate are also eliminated. Since plasma activation is not performed on the component substrate, the degassing process for removing moisture for plasma activation has its validity significantly reduced and is removed from the flow. In block 702, a radiation process is performed on the component substrate. The component substrate may be, for example, a tape frame substrate used to support and transport dies for processing in an integration bonding tool, or a carrier comprising a reconstituted die (molded die). The radiation process may be, for example, but not limited to, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the die bond to the component substrate to enable subsequent eject and pick processes, but the weakened die bond is sufficient to hold the die in place for other processing up to the eject and pick process stages.

[0024] In block 704, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the stronger the bonding. In block 706, an ejection and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process may also include inverting the die before bonding (see, for example, Figure 8). Before, after, or simultaneously with the processing of the component substrate (blocks 702-704), the substrate to which the die will be bonded is also processed. In block 710, a plasma activation process is performed on the substrate. Plasma activation facilitates the preparation of the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration during which it remains effective for bonding. In some cases, plasma activation lasts for about 7 to 20 hours before reactivation is required. In block 712, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bonding strength. In block 708, the selected die is placed on the substrate for bonding with the substrate in a hybrid bonding process. Subsequently, an annealing process can be used on the bonded die and substrate.

[0025] Figure 9 shows a schematic top view of a multi-chamber processing tool 900 (integrated hybrid bonding tool) for bonding dies to a substrate, according to at least some embodiments of the present principle. The methods and flows described above can be performed using the multi-chamber processing tool 900. The multi-chamber processing tool 900 generally includes an apparatus front-end module (EFEM) 902 and a plurality of automation modules 910 coupled in series to the EFEM 902. The plurality of automation modules 910 are configured to transport one or more types of substrates 912 back and forth from the EFEM 902 through the multi-chamber processing tool 900 and to perform one or more processing steps on one or more types of substrates 912 (e.g., component substrates with dies, substrates for bonding dies, etc.). Each of the plurality of automation modules 910 generally includes a transfer chamber 916 and one or more process chambers 906 coupled to the transfer chamber 916 to perform one or more processes. The plurality of automation modules 910 are coupled to each other via their respective transfer chambers 916, providing modular expandability and customizability of the multi-chamber processing tool 900. As shown in Figure 9, the multiple automation modules 910 comprise three automation modules: the first automation module 910a is coupled to the EFEM 902, the second automation module 910b is coupled to the first automation module 910a, and the third automation module 910c is coupled to the second automation module 910b.

[0026] The EFEM902 includes a plurality of load ports 914 for receiving one or more types of substrates 912. In some embodiments, the one or more types of substrates 912 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates with or without reconfigured dies, silicon substrates, glass substrates, and the like. In some embodiments, the plurality of load ports 914 include at least one of one or more first load ports 914a for receiving a first type of substrate 912a, or one or more second load ports 914b for receiving a second type of substrate 912b. In some embodiments, the first type of substrate 912a has a different size than the second type of substrate 912b. In some embodiments, the second type of substrate 912b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 912b includes a plurality of dies arranged on the tape frame or carrier plate. In some embodiments, the second type of substrate 912b can hold dies of different types and sizes. Therefore, one or more second load ports 914b may have different sizes or receiving surfaces configured to load second types of substrates 912b having different sizes. In some embodiments, multiple load ports 914 are arranged along a common side of the EFEM 902. Figure 9 shows a pair of first load ports 914a and a pair of second load ports 914b, but the EFEM 902 may include other combinations of load ports, such as one first load port 914a and three second load ports 914b.

[0027] In some embodiments, the EFEM 902 includes a scanning station 908 having a substrate ID reader for scanning one or more types of substrates 912 to identify information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 900 is configured to use any identification information from one or more types of substrates 912 being scanned to determine processing based on that identification information, e.g., different processes and / or arrangements for a first type of substrate 912a and a second type of substrate 912b. In some embodiments, the scanning station 908 may also be configured to rotate to align the first type of substrate 912a or the second type of substrate 912b. In some embodiments, one or more of a plurality of automation modules 910 include the scanning station 908. The EFEM robot 904 is positioned in the EFEM 902 and is configured to transport the first type of substrate 912a and the second type of substrate 912b between a plurality of load ports 914 and the scanning station 908. The EFEM robot 904 may include a board end effector for handling a first type of board 912a and a second end effector for handling a second type of board 912b. The EFEM robot 904 can rotate or move linearly while rotating.

[0028] The transfer chamber 916 includes a buffer 920 configured to hold one or more first type substrates 912a. In some embodiments, the buffer 920 is configured to hold one or more first type substrates 912a and one or more second type substrates 912b. The transfer chamber 916 includes a transfer robot 926 configured to transfer the first type substrates 912a and second type substrates 912b between the buffer 920, one or more process chambers 906, and a buffer located in an adjacent automation module among a plurality of automation modules 910. For example, the transfer robot 926 in the first automation module 910a is configured to transfer the first type substrates 912a and second type substrates 912b between the first automation module 910a and the buffer 920 in the second automation module 910b. In some embodiments, the buffer 920 is located within the internal volume of the transfer chamber 916, which advantageously reduces the overall tool footprint. In addition, the buffer 920 may be open to the internal volume of the transfer chamber 916 in order to facilitate access by the transfer robot 926.

[0029] One or more process chambers 906 may include an atmospheric chamber configured to operate under atmospheric pressure and a vacuum chamber configured to operate under vacuum pressure. Examples of atmospheric chambers generally include wet cleaning chambers, radiation chambers, heating chambers, measurement chambers, bonding chambers, etc. An example of a vacuum chamber is a plasma activation chamber. The atmospheric chambers of the above types may also be configured to operate under vacuum if necessary. One or more process chambers 906 may be any process chamber or module required to perform bonding processes, cleaning processes, radiation processes, etc. In some embodiments, one or more process chambers 906 in each of a plurality of automation modules 910 include at least one of a wet cleaning chamber 922, a plasma activation chamber 930, a venting chamber 932, a radiation chamber 934, or a bonder chamber 940, so that the multi-chamber processing tool 900 includes at least one wet cleaning chamber 922, a plasma activation chamber 930, at least one venting chamber 932, at least one radiation chamber 934, and at least one bonder chamber 940. One or more process chambers 906 can be positioned at any suitable location on the multi-chamber processing tool 900.

[0030] The wet cleaning chamber 922 is configured to perform a wet cleaning process to clean one or more types of substrates 912 through a fluid such as water. The wet cleaning chamber 922 may include a first wet cleaning chamber 922a for cleaning a first type of substrate 912a, or a second wet cleaning chamber 922b for cleaning a second type of substrate 912b. The degassing chamber 932 is configured to perform a degassing process to remove moisture, for example, through a high-temperature baking process. In some embodiments, the degassing chamber 932 includes a first degassing chamber 932a and a second degassing chamber 932b. The plasma activation chamber 930 may be configured to perform an activation process on the substrate in preparation for hybrid bonding. Activation helps to improve the bonding strength between surfaces. In some embodiments, the plasma activation chamber 930 includes a first plasma activation chamber 930a and a second plasma activation chamber 930b. The radiation chamber 934 is configured to perform a radiation process to reduce adhesion between dies on a component substrate, such as a tape frame substrate or a carrier substrate having a reconfigured die. For example, the radiation chamber 934 may be an ultraviolet radiation chamber configured to direct ultraviolet light onto the component substrate, or a heating chamber configured to heat the component substrate. Reducing the adhesion between the die and the component substrate makes it easier to remove the die 206 from the component substrate. The bonder chamber 940 is configured to transfer and bond at least a portion of the die from the component substrate to the substrate. The bonder chamber 940 generally includes a first support 942 for supporting one of a first type of substrate 912a and a second support 944 for supporting one of a second type of substrate 912b.

[0031] In some embodiments, the last automation module of a plurality of automation modules 910, for example, the third automation module 910c in Figure 9, includes one or more bonder chambers 940 (two are shown in Figure 9). In some embodiments, the first of the two bonder chambers is configured to remove and bond dies having a first size, and the second of the two bonder chambers is configured to remove and bond dies having a second size. In some embodiments, any of the plurality of automation modules 910 includes a measurement chamber 918 configured to measure one or more types of substrates. In Figure 9, the measurement chamber 918 is shown as part of the second automation module 910b coupled to the transfer chamber 916 of the second automation module 910b. However, the measurement chamber 918 may be coupled to or located within any transfer chamber 916.

[0032] The controller 980 controls the operation of any of the multi-chamber processing tools described herein, including the multi-chamber processing tool 900. The controller 980 may directly control the multi-chamber processing tool 900, or alternatively, by controlling a computer (or controller) associated with the multi-chamber processing tool 900. In operation, the controller 980 enables data acquisition and feedback from the multi-chamber processing tool 900 to optimize its performance and control the processing flow according to the methods described herein. The controller 980 generally includes a central processing unit (CPU) 982, memory 984, and support circuitry 986. The CPU 982 may be any form of general-purpose computer processor that can be used in an industrial environment. The support circuitry 986 may conventionally be coupled to the CPU 982 and may include a cache, clock circuitry, input / output subsystems, power supply, etc. Software routines, such as those described above, may be stored in memory 984 and, when executed by the CPU 982, can be transformed into an application-specific computer (controller 980). The software routine may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 900.

[0033] Memory 984, when executed by CPU 982, is a form of computer-readable storage medium containing instructions for facilitating the operation of semiconductor processes and equipment. The instructions in Memory 984 are in the form of a program product, such as a program, that implements the methods of the present principle. The program code may conform to one of several different programming languages. For example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program in the program product defines the functionality of the embodiments (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writable storage media on which information is permanently stored (e.g., read-only memory devices in a computer, such as CD-ROM disks, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory, readable by a CD-ROM drive), and writable storage media on which modifiable information is stored (e.g., floppy disks or hard disk drives in a diskette drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media is an embodiment of the present principle if it carries computer-readable instructions that direct the functionality of the methods described herein.

[0034] Embodiments of this principle may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media that can be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform, or a “virtual machine” operating on one or more computing platforms). For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some embodiments, the computer-readable media may include non-temporary computer-readable media.

[0035] The above describes embodiments of the present principle, but other embodiments and further embodiments of the present principle can be devised without departing from the basic scope of the present principle.

Claims

1. A method for bonding a die to a substrate, A step of performing a radiation process on a component substrate having multiple dies to weaken the adhesive bonding of the multiple dies from the surface of the component substrate, The step of performing a degassing process on the component substrate after the radiation process on the component substrate and before performing a plasma activation process on the component substrate, The steps include performing the plasma activation process on the component substrate after the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate, The steps include: performing the first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; The steps include performing an eject and pick process after the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate, The steps include: performing a plasma activation process on the substrate; The steps include: performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; The steps include performing a hybrid bonding process to bond the at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate, and Methods that include...

2. The method according to claim 1, wherein the method is carried out without hydration of the component substrate or the substrate.

3. The method according to claim 2, wherein the degassing process also includes removing moisture from the component substrate.

4. The method according to claim 1, wherein the radiation process includes irradiating the component substrate with ultraviolet light.

5. The method according to claim 1, performed in an integrated hybrid bonding tool.

6. The method according to claim 1, wherein the component substrate is a tape frame substrate.

7. The method according to claim 1, wherein the component substrate is a carrier substrate having a reconfigured die.

8. The method according to claim 1, wherein the substrate is silicon or a silicon substrate with glass support.

9. The method according to claim 8, wherein the substrate has stacked dies from a previous bonding process.

10. A hybrid bonding tool for bonding a die to a substrate, At least one radiation chamber, At least one wet cleaning chamber, At least one plasma activation chamber, At least one venting chamber, At least one hybrid bonding chamber, The controller for the aforementioned hybrid bonding tool, A radiation process in at least one radiation chamber applied to the component substrate having the plurality of dies, for weakening the adhesive bonding of the plurality of dies from the surface of the component substrate, A degassing process performed on the component substrate in the at least one degassing chamber, after the radiation process on the component substrate and before the plasma activation process on the component substrate, The plasma activation process performed on the component substrate in the at least one plasma activation chamber, after the radiation process on the component substrate and before the first wet cleaning process on the component substrate, A first wet cleaning process in the at least one wet cleaning chamber for cleaning at least one die bonding surface of the component substrate after the radiation process, An ejection and picking process in the at least one hybrid bonding chamber, after performing the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate, A plasma activation process for the substrate in the at least one plasma activation chamber, A second wet cleaning process in the at least one wet cleaning chamber, after the plasma activation process on the substrate, for cleaning the substrate bonding surface of the substrate, and A hybrid bonding process in at least one hybrid bonding chamber for bonding the at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate. The controller and A hybrid bonding tool equipped with [features / equipment].

11. The hybrid bonding tool according to claim 10, wherein the controller is configured to bond the die to the substrate without hydrating the component substrate or the substrate.

12. The hybrid bonding tool according to claim 11, wherein the degassing process also includes the removal of moisture from the component substrate.

13. The hybrid bonding tool according to claim 10, wherein the radiation process includes irradiating the component substrate with ultraviolet light.

14. A non-temporary computer-readable medium that, when executed, stores instructions for performing a method for bonding a die to a wafer, wherein the method A step of performing a radiation process on a component substrate having multiple dies to weaken the adhesive bonding of the multiple dies from the surface of the component substrate, The step of performing a degassing process on the component substrate after the radiation process on the component substrate and before performing a plasma activation process on the component substrate, The steps include performing the plasma activation process on the component substrate after the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate, The steps include: performing the first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; The steps include performing an eject and pick process after the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate, The steps include: performing a plasma activation process on the substrate; The steps include: performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; The steps include performing a hybrid bonding process to bond the at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate, and Non-temporary computer-readable media, including [specific examples of such media].

15. The non-temporary computer-readable medium according to claim 14, wherein the method is performed without hydration of the component substrate or the substrate.

16. The non-temporary computer-readable medium according to claim 15, wherein the degassing process also includes the removal of moisture from the component substrate.

17. The non-temporary computer-readable medium according to claim 14, wherein the radiation process includes irradiating the component substrate with ultraviolet light.

18. The non-temporary computer-readable medium according to claim 14, wherein the component substrate is a tape frame substrate.

19. The non-temporary computer-readable medium according to claim 14, wherein the component substrate is a carrier substrate having a reconfigured die.

20. The non-transient computer-readable medium according to claim 14, wherein the substrate is a silicon or glass-supported silicon substrate having or not having stacked dies from a previous bonding process.

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