Light-emitting diode chip and method for manufacturing the same

Abstract

To provide a light-emitting diode chip and a manufacturing method for the same.SOLUTION: A manufacturing method for a light-emitting diode chip according to the present disclosure includes the steps of: providing a plurality of light-emitting diode elements on a substrate, covering the light-emitting diode element and the substrate with a photoresist layer, patterning the photoresist layer using a photomask, thereby forming an etching target structure, spray-etching the etching target structure and then removing the photoresist layer, thereby forming an after-etching structure, transferring the after-etching structure onto an elastic film, and forming a plurality of light-emitting diode chips by extending the elastic film. Thus, the structure damage, thermal loss, or dimension error that may occur at cutting can be reduced drastically. Moreover, the manufacturing efficiency of the light-emitting diode chip can be improved.SELECTED DRAWING: Figure 1

Description

Technical Field

[0002] ,

[0006]

[0001] The present disclosure relates to a light-emitting diode chip and a manufacturing method thereof, and particularly to a light-emitting diode chip divided by structural expansion and a manufacturing method thereof.

Background Art

[0002] A well-known method for manufacturing a light-emitting diode chip is to first perform epitaxial growth on a substrate to manufacture a preliminary diode structure, and then cut the substrate to divide it into a plurality of light-emitting diode chips. There are mainly three types in the cutting process: laser cutting, blade cutting, and plasma cutting. Briefly speaking, laser cutting and plasma cutting respectively irradiate the substrate with a high-power laser and a high-temperature plasma to burn the substrate, generate a notch in the substrate and break it, and blade cutting divides the substrate with a sharp blade. [[ID=!4]]

Summary of the Invention

Problems to be Solved by the Invention

[0003] Problems common to laser cutting, blade cutting, and plasma cutting are that the cutting speed is slow, and high temperature is likely to occur during the cutting process, resulting in heat loss to the light-emitting diode chip, and further affecting the service life of the light-emitting diode chip. Also, when cutting a thin metal substrate or a composite metal substrate, dimensional errors are likely to occur in laser cutting, blade cutting, and plasma cutting, further reducing the yield of the light-emitting diode chip.

[0004] In view of this, how to improve the defects in cutting the light-emitting diode chip has become the goal that related operators strive for.

Means for Solving the Problems

[0005] The object of the present disclosure is to provide a manufacturing method of a light-emitting diode chip that can reduce heat loss during cutting and improve cutting efficiency and yield. [[ID=3!]]

[0006] e One embodiment of the present disclosure provides a method for manufacturing a light-emitting diode chip, comprising the steps of: providing a plurality of light-emitting diode elements spaced apart from each other on the surface of a substrate; covering the light-emitting diode elements and the surface of the substrate with a photoresist layer; patterning the photoresist layer with a photomask to form an etching target structure; spray etching the etching target structure, then removing the photoresist layer to form a post-etched structure, wherein the post-etched structure has a plurality of chip portions and a plurality of connection portions located between two adjacent chip portions and connected to the two chip portions, and the light-emitting diode elements are located in the chip portions, respectively; transferring the post-etched structure onto an elastic film; and stretching the elastic film to break the connection portions and form a plurality of light-emitting diode chips.

[0007] According to the method for manufacturing the light-emitting diode chip, the substrate may be a composite metal substrate comprising at least two structural layers.

[0008] According to the method for manufacturing the light-emitting diode chip, the material of each structural layer may include at least one of copper, nickel, and iron.

[0009] According to the above method for manufacturing a light-emitting diode chip, when spray etching is performed, the etching solution may be sprayed onto the structure to be etched using a micronozzle.

[0010] According to the method for manufacturing the light-emitting diode chip, each connection portion has a width, each chip portion has an edge length, and the ratio of the width to the edge length may be 0.1 to 0.2.

[0011] Another embodiment of the present disclosure provides a light-emitting diode chip manufactured by the method for manufacturing the light-emitting diode chip, the substrate having a body and at least one protrusion connected to the body and extending outward from the body.

[0012] According to the light-emitting diode chip, the number of protrusions may be two, the body may be square, and the two protrusions may each be connected to two adjacent edges of the body.

[0013] According to the light-emitting diode chip, the number of protrusions may be three, the body may be square, and each of the three protrusions may be connected to three adjacent edges of the body.

[0014] According to the light-emitting diode chip, the number of protrusions may be four, the body may be square, and each of the four protrusions may be connected to one of the four edges of the body.

[0015] According to the light-emitting diode chip, the protrusion may be trapezoidal in shape, and the long base of the protrusion may be connected to the main body.

[0016] As a result, the method for manufacturing a light-emitting diode chip of this disclosure, by adjusting the post-etched structure, has a post-etched structure having multiple chip portions and multiple connection portions, and the chip portions can then be separated using a stretching method. This significantly reduces structural damage, heat loss, or dimensional errors caused by cutting, which are well known, and improves the manufacturing efficiency of light-emitting diode chips. [Brief explanation of the drawing]

[0017] To make the above and other purposes, features, advantages and examples of this disclosure clearer and easier to understand, the accompanying drawings are described below. [Figure 1] This is a process flowchart of a method for manufacturing a light-emitting diode chip according to one embodiment of the present disclosure. [Figure 2] This is a schematic diagram of the process in the manufacturing method of light-emitting diode chips. [Figure 3] This is a schematic diagram of the process in the manufacturing method of light-emitting diode chips. [Figure 4]It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 5A] It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 5B] It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 6] It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 7A] It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 7B] It is a structural schematic diagram of the steps in the manufacturing method of a light-emitting diode chip. [Figure 8] It is a structural schematic diagram of a light-emitting diode chip.

Embodiments for Carrying Out the Invention

[0018] Hereinafter, each embodiment of the present disclosure will be examined in more detail. However, this embodiment may be an application of various disclosed concepts and may be specifically implemented within various different specific ranges. The specific embodiments are for illustrative purposes only and are not limited to the disclosed scope. Also, for the purpose of simplifying the drawings, some well-known and commonly used structures and elements are shown simply and schematically in the drawings, and overlapping elements may be represented by the same number or similar numbers.

[0019] Please refer to FIG. 1. FIG. 1 is a process flowchart of a manufacturing method 100 of a light-emitting diode chip according to an embodiment of the present disclosure. The manufacturing method 100 of a light-emitting diode chip includes step 110, step 120, step 130, step 140, step 150, and step 160.

[0020] Please refer to FIG. 2. FIG. 2 is a structural schematic diagram of step 110 in the manufacturing method 100 of a light-emitting diode chip. Step 110 is to provide a plurality of light-emitting diode elements 210 on the surface of a substrate 220. The light-emitting diode elements 210 are spaced apart from each other to maintain an appropriate space and contribute to subsequent separation. The substrate 220 may be a composite metal substrate. The composite metal substrate may include at least two structural layers, and the material of each structural layer may include at least one of copper, nickel, and iron. For example, the composite metal substrate may have a multilayer structure, and the material of each layer structure can be adjusted according to physical and chemical properties or circuit requirements, so the present disclosure is not limited thereto.

[0021] Please refer to FIG. 3. FIG. 3 is a structural schematic diagram of step 120 in the manufacturing method 100 of a light-emitting diode chip. Step 120 is to cover the surface of the light-emitting diode element 210 and the substrate 220 with a photoresist layer 230. The photoresist layer 230 may use a positive photoresist material or a negative photoresist material. In the present disclosure, the positive photoresist material is taken as an example for description, but the present disclosure is not limited thereto.

[0022] Please refer to FIG. 4. FIG. 4 is a structural schematic diagram of step 130 in the manufacturing method 100 of a light-emitting diode chip. Step 130 is to pattern the photoresist layer 230 with a photomask M to form an etching target structure S1. Specifically, the photomask M may have a plurality of first light-shielding portions M1 and a plurality of second light-shielding portions M2. When patterning, the first light-shielding portions M1 may be respectively aligned with the light-emitting diode elements 210, the area of the first light-shielding portions M1 may be slightly larger than that of the light-emitting diode elements 210, and the second light-shielding portions M2 may be respectively located between two adjacent first light-shielding portions M1 and connected to the two first light-shielding portions M1.

[0023] Please refer to Figures 5A and 5B. Figure 5A is a schematic diagram of one structure of step 140 in the manufacturing method 100 of a light-emitting diode chip, and Figure 5B is a schematic diagram of another structure of step 140 in the manufacturing method 100 of a light-emitting diode chip. Step 140 involves spray etching the structure to be etched S1, then removing the photoresist layer 230 to form the post-etched structure S2. When spray etching is performed, by spraying the etching solution onto the structure to be etched S1 with a micronozzle N, the substrate 220 not covered by the photomask M and a portion of the substrate 220 covered by the second light-shielding part M2 can be removed, forming a mesh-like array structure as shown in Figure 5A.

[0024] More specifically, the substrate 220 may be a composite metal substrate and may contain at least two structural layers, preferably having 2 to 5 structural layers. This allows for obtaining an appropriate etching selectivity ratio when spray etching is performed, meaning the etching solution provides different etching rates for different structural layers, and allows for leaving structural layers closer to the photomask M. Furthermore, spray etching can further reduce side etching of the substrate 220, contributing to the formation of a mesh-like arrangement structure as shown in Figure 5A.

[0025] The etched structure S2 has a plurality of chip portions S21 and a plurality of connection portions S22, where the connection portions S22 are located between two adjacent chip portions S21 and connected to the two chip portions S21, and the light-emitting diode elements 210 are located on the chip portions S21. As can be seen from Figure 5B, after a portion of the substrate 220 covered by the second light-shielding portion M2 is removed, a plurality of thin tethers 240 can be formed, each tether 240 belonging to a connection portion S22.

[0026] Furthermore, each connecting portion S22 has a width W, and each chip portion S21 has an edge length L, and the ratio of the width W to the edge length L may be 0.1 to 0.2. This improves the connection strength between the chip portions S21 and simultaneously improves the subsequent separation efficiency of the chip portions S21. However, since the post-etched structure S2 only has the chip portions S21 and the connecting portions S22 and can be smoothly separated in subsequent processes, this disclosure is not limited to the dimensions of the chip portions S21 and the connecting portions S22.

[0027] Please refer to Figure 6. Figure 6 is a schematic diagram of the structure of step 150 in the manufacturing method 100 of a light-emitting diode chip. Step 150 is to transfer the etched structure S2 onto the elastic film 250 in order to contribute to the subsequent separation of the chip portion S21.

[0028] Please refer to Figures 7A and 7B together. Figure 7A is a schematic diagram of one structure of step 160 in the manufacturing method 100 of a light-emitting diode chip, and Figure 7B is a schematic diagram of another structure of step 160 in the manufacturing method 100 of a light-emitting diode chip. Step 160 involves stretching an elastic film 250 to break the connecting portion S22 and form a plurality of light-emitting diode chips (not indicated), and once the connecting portion S22 is broken, forming protrusions 260 on the edges of the two chip portions S21 connected to the connecting portion S22. Furthermore, each connecting portion S22 has an extending direction, and here, taking the first extending direction D1 and the second extending direction D2 as an example, when stretching the elastic film 250, it can be stretched parallel to the first extending direction D1 and the second extending direction D2, and the central part of each connecting portion S22 can be finer than the ends connected to the tip portion S21, thereby controlling the breaking point of the connecting portion S22 and reducing the possibility of damage to the tip portion S21 due to the breaking of the connecting portion S22.

[0029] It is particularly important to explain that while Figures 2 to 7B only illustrate the manufacturing of nine light-emitting diode chips, in actual production, the number of light-emitting diode elements 210 and the area of ​​the substrate 220 can be increased, and the shape of the photomask M can be adjusted accordingly to manufacture a large number of light-emitting diode chips. Therefore, this disclosure is not limited to the number or structure shown in Figures 2 to 7B.

[0030] Please refer to Figure 8. Figure 8 is a schematic diagram of the structure of a light-emitting diode chip 300. Another embodiment of the present disclosure provides a light-emitting diode chip 300 manufactured by the above-described method for manufacturing a light-emitting diode chip 100. The substrate 320 of the light-emitting diode chip 300 has a body 321 and at least one protrusion 322, the protrusion 322 being connected to and extending outward from the body 321, and the light-emitting diode element 310 of the light-emitting diode chip 300 is located on the body 321.

[0031] More specifically, when the above-mentioned chip portions S21 are separated from each other, the connection portion S22 between two adjacent chip portions S21 is broken, leaving the protrusions 322. Therefore, the number of protrusions 322 may be four, the main body 321 may be square, and the four protrusions 322 may each be connected to one of the four edges of the main body 321. Alternatively, please also refer to Figure 7A. Since the chip portion S21 located at the corner of the post-etched structure S2 is connected to only two connection portions S22, the number of protrusions 322 may be two, and the two protrusions 322 may each be connected to two adjacent edges of the main body 321. Alternatively, since the chip portion S21 located at the edge of the post-etched structure S2 is connected to only three connection portions S22, the number of protrusions 322 may be three, and the three protrusions 322 may each be connected to three adjacent edges of the main body 321.

[0032] Furthermore, the central part of the connection part S22 may be finer than both ends connected to the tip part S21, so the broken protrusion 322 may be trapezoidal, and the long base of the protrusion 322 may be connected to the main body 321.

[0033] As described above, the method for manufacturing a light-emitting diode chip of this disclosure, by adjusting the post-etched structure, has a post-etched structure having multiple chip portions and multiple connection portions, and thereafter the chip portions can be separated using a stretching method, thereby significantly reducing structural damage, heat loss, or dimensional errors caused by cutting, which are well known, and improving the manufacturing efficiency of light-emitting diode chips.

[0034] While the present disclosure is disclosed in the examples above, the examples are not intended to limit the present disclosure, and any person skilled in the art may make various modifications and alterations without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the claims appended thereto. [Explanation of Symbols]

[0035] 100: Method for manufacturing light-emitting diode chips 110, 120, 130, 140, 150, 160: Process 210, 310: Light-emitting diode element 220, 320: Circuit board 230: Photoresist layer 240: Tether 250: Elastic film 260: Convex part 300: Light-emitting diode chip 321: Main unit 322: Convex part M: Photo Mask M1: First light-shielding section M2: 2nd light shielding part S1: Structure to be etched S2: Post-etching structure S21: Tip section S22: Connection part N: Micronozzle W: Width L: Edge length D1: First extension direction D2: Second extension direction

Claims

1. A method for manufacturing a light-emitting diode chip, A process of placing multiple light-emitting diode elements spaced apart from each other on the surface of a substrate, A step of covering the plurality of light-emitting diode elements and the surface of the substrate with a photoresist layer, A step of patterning the photoresist layer using a photomask to form an etching target structure, A step of spray etching the structure to be etched, then removing the photoresist layer to form a post-etched structure, wherein the post-etched structure has a plurality of chip portions and a plurality of connection portions located between two adjacent chip portions and connected to the two chip portions, and the plurality of light-emitting diode elements are located in the plurality of chip portions. A step of transferring the etched structure onto an elastic film, A step of stretching the elastic film to break the plurality of connecting portions and form a plurality of light-emitting diode chips, A method for manufacturing a light-emitting diode chip that includes [the specified component].

2. The method for manufacturing a light-emitting diode chip according to claim 1, wherein the substrate is a composite metal substrate comprising at least two structural layers.

3. The method for manufacturing a light-emitting diode chip according to claim 2, wherein the material of each of the at least two structural layers comprises at least one of copper, nickel, and iron.

4. A method for manufacturing a light-emitting diode chip according to claim 1, wherein, when spray etching is performed, an etching solution is sprayed onto the structure to be etched using a micronozzle.

5. A method for manufacturing a light-emitting diode chip according to claim 1, wherein each of the connection portions has a width, each of the chip portions has an edge length, and the ratio of the width to the edge length is 0.1 to 0.

2.

6. A light-emitting diode chip, A substrate comprising at least two structural layers, wherein the at least two structural layers include metal, A light-emitting diode element, and having, The substrate of the light-emitting diode chip has a main body and at least one protrusion connected to the main body and extending outward from the main body. A light-emitting diode chip characterized in that the maximum width of the at least one protrusion is located at the connection point between the at least one protrusion and the main body, and the width of the at least one protrusion gradually decreases in the direction away from the main body.

7. The light-emitting diode chip according to claim 6, wherein the number of at least one protrusions is two, the body is rectangular, and the two protrusions are each connected to two adjacent edges of the body.

8. The light-emitting diode chip according to claim 6, wherein the number of at least one protrusions is three, the body is rectangular, and the three protrusions are each connected to three adjacent edges of the body.

9. The light-emitting diode chip according to claim 6, wherein the number of at least one protrusions is four, the body is rectangular, and each of the four protrusions is connected to one of the four edges of the body.

10. The light-emitting diode chip according to claim 6, wherein the at least one protrusion is trapezoidal, and the long base of the at least one protrusion is connected to the main body.

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