Plasma processing equipment

Abstract

To provide a technique that enables impedance matching even when the frequency changeable range of a high-frequency power source coupled to a resonator of a plasma processing apparatus is small.SOLUTION: A plasma processing apparatus disclosed herein includes a chamber, a substrate support portion, a first electrode, a second electrode, an introduction portion, and a resonator. The substrate support portion is provided within the processing space of the chamber. The first electrode is provided above the processing space. The second electrode is provided above the processing space and below the first electrode. The second electrode provides a plasma generation space between the first electrode and the second electrode, and provides a plurality of through holes that guide active species generated in the plasma generation space into the processing space. The introduction portion is configured to introduce electromagnetic waves into the plasma generation space. The resonator includes a waveguide for propagating electromagnetic waves in the introduction portion. The length of the waveguide is longer than 1 / 2 of the wavelength of the electromagnetic wave in the waveguide.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a plasma processing apparatus.

Background Art

[0002] A plasma processing apparatus is used in plasma processing of a substrate. One type of plasma processing apparatus includes a processing chamber, a stage, an upper electrode, an introduction unit, and a waveguide unit. The stage is provided inside the processing chamber. The upper electrode is provided above the stage through the space inside the processing chamber. The introduction unit is a high-frequency introduction unit, provided at a lateral end of the space inside the processing chamber, and extending circumferentially around the central axis of the processing chamber. The waveguide unit is configured to supply high-frequency power to the introduction unit. The waveguide unit includes a resonator that provides a waveguide. The waveguide of the resonator extends circumferentially around the central axis, extends in the direction in which the central axis extends, and is connected to the introduction unit.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique that enables impedance matching even when the range of change in the frequency of a high-frequency power source coupled to a resonator of a plasma processing apparatus is small.

Means for Solving the Problems

[0005] In one exemplary embodiment, a plasma processing apparatus is applied. The plasma processing apparatus comprises a chamber, a substrate support, a first electrode, a second electrode, an introduction section, and a resonator. The substrate support is located within the processing space of the chamber. The first electrode is located above the processing space. The second electrode is located above the processing space and below the first electrode. The second electrode provides a plasma generation space between the first and second electrodes and provides a plurality of through-holes for guiding active species generated in the plasma generation space into the processing space. The introduction section is formed from a dielectric and is configured to introduce electromagnetic waves into the plasma generation space. The resonator includes a waveguide for propagating electromagnetic waves into the introduction section. The length of the waveguide is longer than half the wavelength of the electromagnetic waves in the waveguide. [Effects of the Invention]

[0006] According to one exemplary embodiment, impedance matching can be achieved even if the frequency range of the high-frequency power supply coupled to the resonator of the plasma processing apparatus is small. [Brief explanation of the drawing]

[0007] [Figure 1] This figure shows a plasma processing apparatus according to one exemplary embodiment. [Figure 2] This is a partially enlarged cross-sectional view showing a resonator and connector of a plasma processing apparatus according to one exemplary embodiment. [Figure 3] This is a partially enlarged plan view showing the resonator and connector of a plasma processing apparatus according to one exemplary embodiment. [Figure 4] This figure shows a plasma processing apparatus according to another exemplary embodiment. [Figure 5] This figure shows a plasma processing apparatus according to yet another exemplary embodiment. [Figure 6] This figure shows a plasma processing apparatus according to yet another exemplary embodiment. [Modes for carrying out the invention]

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 shows a plasma processing apparatus according to one exemplary embodiment. The plasma processing apparatus 1 shown in Figure 1 comprises a chamber 10, a substrate support section 12, a first electrode 14, a second electrode 16, an introduction section 18, and a resonator 20.

[0010] Chamber 10 provides a processing space 10s within it. In the plasma processing apparatus 1, the substrate W is processed in the processing space 10s. Chamber 10 is formed from a metal such as aluminum and is grounded. Chamber 10 has a side wall 10a which is open at its upper end. Chamber 10 and side wall 10a may have a substantially cylindrical shape. The processing space 10s is provided inside the side wall 10a. The central axis of each of chamber 10, side wall 10a, and processing space 10s is axis AX. Chamber 10 may have a corrosion-resistant film on its surface. The corrosion-resistant film may be a ceramic film containing yttrium oxide, yttrium fluoride oxide, yttrium fluoride, yttrium oxide, or yttrium fluoride, etc.

[0011] The bottom of the chamber 10 provides an exhaust port 10e. An exhaust system is connected to the exhaust port 10e. The exhaust system may include a vacuum pump such as a dry pump and / or a turbomolecular pump and an automatic pressure control valve.

[0012] The substrate support portion 12 is located within the processing space 10s. The substrate support portion 12 is configured to support the substrate W placed on its upper surface in a substantially horizontal position. The substrate support portion 12 has a substantially disc shape. The central axis of the substrate support portion 12 is axis AX.

[0013] The first electrode 14 is located above the processing space 10s. The first electrode 14 is made of a conductor such as aluminum and has a substantially disc shape. The central axis of the first electrode 14 is axis AX. The first electrode 14 may provide a plurality of gas holes 14h for introducing gas into the plasma generation space 15, which will be described later. The plurality of gas holes 14h extend in the thickness direction (vertical direction) of the first electrode 14 and penetrate the first electrode 14.

[0014] The second electrode 16 is located above the processing space 10s and below the first electrode 14. The second electrode 16 may extend substantially parallel to the first electrode 14. The second electrode 16 is formed from a conductor such as aluminum and has a substantially disc shape. The central axis of the second electrode 16 is axis AX. The second electrode 16 closes the upper end opening of the chamber 10. That is, the second electrode 16 defines the processing space 10s from above.

[0015] The second electrode 16 provides a plasma generation space 15 between the first electrode 14 and the second electrode 16. In the plasma generation space 15, plasma is generated from gas by electromagnetic waves. The second electrode 16 provides a plurality of through-holes 16h to guide active species from the plasma in the plasma generation space 15 to the processing space 10s. The plurality of through-holes 16h extend in the thickness direction (vertical direction) of the second electrode 16 and penetrate the second electrode 16. The cross-sectional area of ​​the plurality of through-holes 16h is set to be relatively large in order to suppress the deactivation of active species as they pass through the plurality of through-holes 16h.

[0016] The introduction part 18 is configured to introduce electromagnetic waves into the plasma generation space 15 for the generation of plasma in the plasma generation space 15. The introduction part 18 is formed of a dielectric such as quartz, aluminum nitride, or aluminum oxide. The introduction part 18 may extend circumferentially around the axis AX so as to surround the plasma generation space 15. The introduction part 18 may have a ring shape. The introduction part 18 may be sandwiched between the peripheral edge of the first electrode 14 and the peripheral edge of the second electrode 16. The electromagnetic wave introduced into the plasma generation space 15 from the introduction part 18 may be a high-frequency wave such as a VHF wave or a UHF wave. The electromagnetic wave is generated by a high-frequency power source described later. The electromagnetic wave propagates through the resonator 20 to the introduction part 18 and is introduced into the plasma generation space 15 from the introduction part 18. Details of the resonator 20 will be described later.

[0017] In one embodiment, the plasma processing apparatus 1 may further include a lid 24. The lid 24 is provided on the first electrode 14. The lid 24 is formed of a conductor such as aluminum and has a substantially disk shape. The central axis of the lid 24 is the axis AX.

[0018] The lid 24 provides a gas diffusion space 24d between the first electrode 14 and the lid 24. A gas supply part 36 is connected to the gas diffusion space 24d. The gas output from the gas supply part 36 is supplied to the plasma generation space 15 through the gas diffusion space 24d and the plurality of gas holes 14h.

[0019] The plasma processing apparatus 1 may further include a high-frequency power source 30. The high-frequency power source 30 is electrically coupled to the waveguide of the resonator 20 and is configured to generate high-frequency power with a variable frequency. The electromagnetic wave introduced into the chamber 10 is generated based on the high-frequency power generated by the high-frequency power source 30. The high-frequency power source 30 may be directly connected to the waveguide of the resonator 20 using a coaxial line 34. That is, the high-frequency power source 30 may be coupled to the waveguide of the resonator 20 without passing through a matcher.

[0020] The resonator 20 can be provided above the chamber 10. The resonator 20 includes a waveguide 20w for propagating electromagnetic waves to the introduction part 18. The waveguide 20w may provide a cavity surrounded by a wall formed of a conductor such as aluminum. The waveguide 20w includes one end 20a and the other end 20b. The other end 20b is the end of the second portion 202 of the waveguide 20w described later and is coupled to the introduction part 18. One end 20a is the end of the waveguide 20w on the side opposite to the other end 20b. The length (electrical length) of the waveguide 20w of the resonator 20, that is, the length between one end 20a and the other end 20b of the path along which the electromagnetic wave propagates in the waveguide 20w, is longer than half of the wavelength of the electromagnetic wave in the waveguide 20w. The length of the waveguide 20w of the resonator 20 may be not more than three - quarters of the wavelength of the electromagnetic wave in the waveguide 20w.

[0021] In one embodiment, the waveguide 20w may include a first portion 201, a second portion 202, and a third portion 203. In FIG. 1, the boundaries between the first portion 201 and the third portion 203 and between the second portion 202 and the third portion 203 are indicated by dotted lines.

[0022] The first portion 201 is coupled to a connector 40 described later for introducing electromagnetic waves into the waveguide 20w. The connector 40 is a part of the coaxial line 34. The first portion 201 includes one end 20a. The first portion 201 may have a cylindrical shape, and its central axis may be the axis AX. That is, the first portion 201 may extend horizontally from one end 20a so as to approach the axis AX.

[0023] The second portion 202 includes the other end 20b described above and is coupled to the introduction part 18. The second portion 202 extends downward to the other end 20b. The second portion 202 may have a cylindrical shape, and its central axis may be the axis AX.

[0024] The third section 203 is a waveguide between the first section 201 and the second section 202. The third section 203 meanders between the first section 201 and the second section 202. The third section 203 may meander multiple times. In the embodiment shown in Figure 1, the third section 203 meanders vertically radially inward relative to the second section 202. That is, in the third section 203, as shown in Figure 1, a plurality of coaxially arranged, cylindrical waveguides are connected in series.

[0025] Electromagnetic waves propagating within the waveguide 20w are reflected at the short-circuited end 20a, forming standing waves within the waveguide 20w and the plasma generation space 15. When the phase difference of the electromagnetic waves along the waveguide 20w between the end 20a and the center of the plasma generation space 15 is (1+2n)π / 2, a resonance state is formed in the waveguide and the plasma generation space. Here, n is 0 or a positive integer. At this time, a uniform electric field is applied to the plasma generation space 15 in the circumferential direction, and a uniform plasma in the circumferential direction is excited. The radial position of the connector 40 is adjusted so that reflection from the resonator 20 is 0 when the resonance state is formed. When n=1, as described above, the length of the waveguide 20w of the resonator 20 of the plasma processing apparatus 1 (i.e., the distance connecting the end 20a and the other end 20b along the waveguide 20w) is longer than half the wavelength of the electromagnetic waves in the waveguide 20w, and less than or equal to 3 / 4. Therefore, with the plasma processing apparatus 1, it is possible to significantly change the impedance of the resonator 20 by changing the frequency of the high-frequency power generated by the high-frequency power supply 30 compared to the case where n=0 (i.e., when the length of the waveguide 20w is less than or equal to half the wavelength of the electromagnetic wave in the waveguide 20w). Therefore, impedance matching can be performed even if the range of changeable frequency of the high-frequency power supply 30 coupled to the resonator 20 is small. Thus, even if the range of changeable frequency of the high-frequency power supply 30 is small, impedance matching can be performed by adjusting the frequency of the high-frequency power in both the state where plasma is generated and the state where plasma is not generated in the plasma generation space 15.

[0026] Hereinafter, Figures 2 and 3 will be referred to in conjunction with Figure 1. Figure 2 is a partially enlarged cross-sectional view showing the resonator and connector of a plasma processing apparatus according to one exemplary embodiment. Figure 3 is a partially enlarged plan view showing the resonator and connector of a plasma processing apparatus according to one exemplary embodiment. In Figure 3, one of the pair of retaining members is shown to be partially broken.

[0027] The plasma processing apparatus 1 may further include a connector 40. The connector 40 is coupled to the waveguide 20w in the first portion 201 as described above. The connector 40 may be configured to be movable radially with respect to the axis AX.

[0028] In one embodiment, the connector 40 may be a coaxial connector. In this case, the connector 40 may include a central conductor 41, an outer conductor 42, a spacer 43, a coupling rod 44, and one or more contact members 45.

[0029] The central conductor 41 is rod-shaped. The outer conductor 42 has a cylindrical shape. The central conductor 41 is provided coaxially with the outer conductor 42. The spacer 43 is made of an insulating material such as polytetrafluoroethylene. The spacer 43 is interposed between the central conductor 41 and the outer conductor 42.

[0030] The upper conductor wall 201a of the first section 201 has a through hole 201h that connects to the cavity of the first section 201. The through hole 201h extends radially with respect to the axis AX. The upper conductor wall 201a provides support surfaces 201s on both sides of the through hole 201h. The support surfaces 201s face upward.

[0031] The coupling rod 44 is coupled to the lower end of the central conductor 41. The coupling rod 44 extends downward through the through hole 201h. One or more contact members 45 are provided at the lower end of the coupling rod 44. One or more contact members 45 can elastically contact the lower conductor wall 201b of the first portion 201. In one embodiment, the connector 40 may have a magnet 46 built into the coupling rod 44 to prevent one or more contact members 45 from falling off the coupling rod 44.

[0032] In one embodiment, the connector 40 may include a plurality of contact probes as one or more contact members 45. Each of the plurality of contact probes includes a barrel, a spring disposed in an internal bore of the barrel, and a plunger extending downward from the internal bore of the barrel and biased downward by the spring. The plurality of contact probes may be arranged circumferentially around the central axis of the coupling rod 44. Alternatively, the connector 40 may have a spiral spring gasket or a diagonally wound coil spring as one or more contact members 45.

[0033] The outer conductor 42 is in contact with the support surface 201s. The outer conductor 42 is movable radially on the support surface 201s. Therefore, the connector 40 can adjust its coupling position with the first portion 201 in the radial direction to suppress reflection of high-frequency power.

[0034] With the radial position of the connector 40 set, the outer conductor 42 may be sandwiched between the support surface 201s and each of the pair of retaining members 50. Each of the pair of retaining members 50 is, for example, plate-shaped. The pair of retaining members 50 are fixed to the upper conductor wall 201a using a number of bolts. In addition, one or more covers 52 may be placed to cover the through hole 201h in order to prevent electromagnetic wave leakage from the through hole 201h, and may be sandwiched between the support surface 201s and each of the pair of retaining members 50.

[0035] In one embodiment, the outer conductor 42 may include a first member 42a and a second member 42b. The first member 42a is provided on and fixed to the second member 42b. The first member 42a has a cylindrical shape. A spacer 43 is provided between the first member 42a and the central conductor 41. The second member 42b is plate-shaped and provides a through hole that is continuous with the inner hole of the first member 42a. The second member 42b is sandwiched between the support surface 201s and each of the pair of retaining members 50.

[0036] The following describes a plasma processing apparatus according to another exemplary embodiment, with reference to Figure 4. Figure 4 is a diagram showing a plasma processing apparatus according to another exemplary embodiment. The following describes the plasma processing apparatus 1B shown in Figure 4 in terms of the differences between plasma processing apparatus 1 and plasma processing apparatus 1B.

[0037] The plasma processing apparatus 1B is equipped with a resonator 20B instead of the resonator 20. The resonator 20B may be located above the chamber 10. The waveguide 20w of the resonator 20B may provide a cavity surrounded by walls formed of a conductor such as aluminum. The waveguide 20w includes one end 20a and the other end 20b. The other end 20b is the end of the second section 202B and is coupled to the introduction section 18. The one end 20a is the end of the waveguide 20w opposite to the other end 20b. The length (electrical length) of the waveguide 20w of the resonator 20B, i.e., the length between the one end 20a and the other end 20b of the path through which the electromagnetic wave propagates in the waveguide 20w, is longer than half the wavelength of the electromagnetic wave in the waveguide 20w. The length of the waveguide 20w of the resonator 20B may be less than or equal to three-quarters of the wavelength of the electromagnetic wave in the waveguide 20w.

[0038] The waveguide 20w of the resonator 20B includes a first section 201B, a second section 202B, and a third section 203B. In Figure 4, the boundary between the first section 201B and the third section 203B, and the boundary between the second section 202B and the third section 203B are shown by dotted lines.

[0039] The first part 201B is coupled to the connector 40 to introduce electromagnetic waves into the waveguide 20w. The first part 201B includes one end 20a. The first part 201B may have a cylindrical shape, and its central axis may be axis AX. That is, the first part 201B may extend horizontally from one end 20a toward axis AX.

[0040] The second portion 202B includes the other end 20b and is connected to the introduction portion 18. The second portion 202B extends downward to the other end 20b. The second portion 202B may have a cylindrical shape, and its central axis may be axis AX.

[0041] The third section 203B is a waveguide between the first section 201B and the second section 202B. The third section 203B meanders between the first section 201B and the second section 202B. The third section 203B may meander multiple times. The third section 203B meanders along a first direction away from the axis AX and a second direction approaching the axis AX. That is, in the third section 203B, multiple waveguides having a cylindrical shape and arranged vertically are connected in series.

[0042] The following describes a plasma processing apparatus according to yet another exemplary embodiment, with reference to Figure 5. Figure 5 is a diagram showing a plasma processing apparatus according to yet another exemplary embodiment. The following describes the plasma processing apparatus 1C shown in Figure 5 in terms of the differences between plasma processing apparatus 1 and plasma processing apparatus 1C.

[0043] The plasma processing apparatus 1C further comprises a cooling mechanism 60. The cooling mechanism 60 is configured to cool the upper structure of the chamber 10, which includes the resonator 20 and the first electrode 14, etc. The cooling mechanism 60 may include one or more intake ports 60h, one or more exhaust ports 60i, and one or more cooling fans 61.

[0044] One or more intake ports 60h connect the waveguide 20w to the outside of the resonator 20. One or more intake ports 60h may be formed in the outer conductor wall of the second portion 202. The cooling mechanism 60 may include a plurality of intake ports 60h. The plurality of intake ports 60h may be arranged circumferentially around the axis AX.

[0045] One or more cooling fans 61 are configured to exhaust air from the cavity of the waveguide 20w of the resonator 20. One or more cooling fans 61 may be mounted on the upper conductor wall 201a, and exhaust air from the cavity of the waveguide 20w may be performed from an exhaust port 60i formed in the upper conductor wall 201a. Note that the arrangement of the intake port and exhaust port may be reversed. That is, air may be drawn in from the position of the exhaust port 60i in Figure 5 and exhausted from the position of the intake port 60h.

[0046] The cooling mechanism 60 may further include a flow path 62. The flow path 62 may be provided by a pipe. The flow path 62 may be formed in the upper conductor wall 201a. A refrigerant is supplied to the flow path 62 from the chiller unit. The refrigerant circulates between the chiller unit and the flow path 62.

[0047] The following describes a plasma processing apparatus according to yet another exemplary embodiment, with reference to Figure 6. Figure 6 is a diagram showing a plasma processing apparatus according to yet another exemplary embodiment. The following describes the plasma processing apparatus 1D shown in Figure 6 in terms of the differences between plasma processing apparatus 1B and plasma processing apparatus 1D.

[0048] The plasma processing apparatus 1D further comprises the cooling mechanism 60 described above. The cooling mechanism 60 is configured to cool the upper structure of the chamber 10, which includes the resonator 20B and the first electrode 14, etc. One or more intake ports 60h connect the waveguide 20w to the outside of the resonator 20B. One or more intake ports 60h may be formed in the outer conductor wall of the second portion 202B. The cooling mechanism 60 may include a plurality of intake ports 60h. One or more cooling fans 61 are configured to exhaust the cavity of the waveguide 20w of the resonator 20B.

[0049] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0050] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E15] below.

[0051] [E1] A chamber that provides a processing space, A substrate support portion provided within the processing space, A first electrode provided above the processing space, A second electrode provided above the processing space and below the first electrode, the second electrode providing a plasma generation space between the first electrode and the second electrode, and providing a plurality of through holes for guiding active species generated in the plasma generation space into the processing space, An introduction section formed from a dielectric material and configured to introduce electromagnetic waves into the plasma generation space, The aforementioned inlet includes a resonator containing a waveguide for propagating electromagnetic waves, Equipped with, The length of the waveguide is longer than half the wavelength of the electromagnetic wave in the waveguide. Plasma processing equipment.

[0052] [E2] The plasma processing apparatus according to E1, wherein the length of the waveguide is 3 / 4 or less of the wavelength of the electromagnetic wave in the waveguide.

[0053] [E3] The plasma apparatus according to E1 or E2, further comprising a high-frequency power supply electrically coupled to the waveguide and configured to generate high-frequency power having a variable frequency.

[0054] [E4] The plasma processing apparatus according to E3, wherein the high-frequency power supply is directly connected to the waveguide using a coaxial line.

[0055] [E5] The plasma processing apparatus according to any one of E1 to E4, wherein the introduction section extends circumferentially around the central axis of the chamber so as to surround the plasma generation space.

[0056] [E6] The plasma processing apparatus according to E5, wherein the introduction section has a ring shape.

[0057] [E7] The waveguide is, A first portion coupled to a connector for introducing the aforementioned electromagnetic waves into the waveguide, A second part connected to the aforementioned introduction section, A third part that meanders between the first part and the second part, A plasma processing apparatus according to E5 or E6, including the one described above.

[0058] [E8] The plasma processing apparatus according to E7, wherein the third portion meanders vertically inward relative to the second portion.

[0059] [E9] The plasma processing apparatus according to claim 7, wherein the third portion meanders along a first direction away from the central axis and a second direction approaching the central axis.

[0060] [E10] The plasma processing apparatus according to any one of E7 to E9, wherein the first portion extends horizontally from its end toward the central axis.

[0061] [E11] The plasma processing apparatus according to any one of E7 to E10, wherein the connector is configured to be movable along the radial direction with respect to the central axis.

[0062] [E12] The aforementioned connector is a coaxial connector, as described in E11, for the plasma processing apparatus.

[0063] [E13] The plasma processing apparatus according to E11 or E12, wherein the connector includes a contact probe that contacts the conductive wall constituting the first part.

[0064] [E14] A plasma processing apparatus according to any one of E1 to E13, further comprising a cooling mechanism configured to cool the resonator.

[0065] [E15] The cooling mechanism is An air intake port that connects the waveguide and the outside of the resonator, A cooling fan configured to exhaust the waveguide, A plasma processing apparatus as described in E14, including the one described above.

[0066] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of symbols]

[0067] 1...Plasma processing apparatus, 10...Chamber, 12...Substrate support section, 14...First electrode, 16...Second electrode, 18...Inlet section, 20...Resonator, 20w...Waveguide.

Claims

1. A chamber that provides a processing space, A substrate support portion provided within the processing space, A first electrode provided above the processing space, A second electrode provided above the processing space and below the first electrode, the second electrode providing a plasma generation space between the first electrode and the second electrode, and providing a plurality of through holes for guiding active species generated in the plasma generation space into the processing space, An introduction section formed from a dielectric material and configured to introduce electromagnetic waves into the plasma generation space, The aforementioned inlet includes a resonator with a waveguide for propagating electromagnetic waves, Equipped with, The length of the waveguide is longer than half the wavelength of the electromagnetic wave in the waveguide and less than or equal to three-quarters the wavelength of the electromagnetic wave in the waveguide. Plasma processing equipment.

2. The plasma processing apparatus according to claim 1, further comprising a high-frequency power supply electrically coupled to the waveguide and configured to generate high-frequency power having a variable frequency.

3. The plasma processing apparatus according to claim 2, wherein the high-frequency power supply is directly connected to the waveguide using a coaxial line.

4. The plasma processing apparatus according to claim 1, wherein the introduction portion extends circumferentially around the central axis of the chamber so as to surround the plasma generation space.

5. The plasma processing apparatus according to claim 4, wherein the introduction section has a ring shape.

6. The waveguide is, A first portion coupled to a connector for introducing the aforementioned electromagnetic waves into the waveguide, The second part is connected to the aforementioned introduction section, A third part that meanders between the first part and the second part, The plasma processing apparatus according to claim 4, including the following:

7. The plasma processing apparatus according to claim 6, wherein the third portion meanders vertically inward relative to the second portion.

8. The plasma processing apparatus according to claim 6, wherein the third portion meanders along a first direction away from the central axis and a second direction approaching the central axis.

9. The plasma processing apparatus according to any one of claims 6 to 8, wherein the first portion extends horizontally from its end toward the central axis.

10. The plasma processing apparatus according to any one of claims 6 to 8, wherein the connector is configured to be movable along the radial direction with respect to the central axis.

11. The plasma processing apparatus according to claim 10, wherein the connector is a coaxial connector.

12. The plasma processing apparatus according to claim 10, wherein the connector includes a contact probe that contacts the conductive wall constituting the first portion.

13. The plasma processing apparatus according to any one of claims 1 to 8, further comprising a cooling mechanism configured to cool the resonator.

14. The cooling mechanism is An air intake port that connects the waveguide and the outside of the resonator, A cooling fan configured to exhaust the waveguide, The plasma processing apparatus according to claim 13, including the following:

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