Electronic devices

Abstract

To achieve high-speed driving of an electronic component.SOLUTION: An electronic device has a first metal layer, a component mounting substrate, a second metal layer, and a sealing resin. The first metal layer includes a first mounting part and a second mounting part. The component mounting substrate includes a wiring board and an electronic component mounted on the wiring board, and the electronic component is mounted on the first mounting part. The second metal layer is joined with a driving component, and is provided on the first metal layer so as to sandwich the driving component between the second mounting part and the second metal layer. The sealing resin fills between the first metal layer and the second metal layer, coats the component mounting substrate, and seals the electronic component and the driving component. The first metal layer has a terminal part projecting in the direction of the second metal layer from the first mounting part. The second metal layer has a wiring part which is brought into contact with the terminal part and electrically connects the second metal layer to the first mounting part.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electronic device.

Background Art

[0002] In recent years, an electronic device is known that connects a substrate on which electronic components such as semiconductor chips are mounted and a substrate on which driving components such as IC (Integrated Circuit) chips for driving the electronic components are mounted by a wiring member such as a wire.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in an electronic device that connects a substrate on which electronic components are mounted and a substrate on which driving components are mounted by a wiring member, there is a problem that it is difficult to drive the electronic components at high speed. That is, when two mutually independent substrates are connected by a wiring member, the wiring length between the electronic components on one substrate and the driving components on the other substrate becomes long due to the routing of the wiring member, and problems such as an increase in inductance and an increase in noise occur. As a result, there is a risk that the high-speed driving of the electronic components by the driving components may be hindered.

[0005] The disclosed technology has been made in view of the above, and an object thereof is to provide an electronic device capable of realizing high-speed driving of electronic components.

Means for Solving the Problems

[0006] An electronic device disclosed in this application, in one embodiment, comprises a first metal layer, a component mounting substrate, a second metal layer, and a sealing resin. The first metal layer includes a first mounting portion and a second mounting portion. The component mounting substrate includes a wiring board and electronic components mounted on the wiring board, with the electronic components mounted in the first mounting portion. The second metal layer has a drive component bonded to it and is provided on the first metal layer, sandwiching the drive component between the second mounting portion and the second metal layer. The sealing resin fills the space between the first metal layer and the second metal layer and covers the component mounting substrate, sealing the electronic components and the drive component. The first metal layer has a terminal portion that protrudes from the first mounting portion toward the second metal layer. The second metal layer has a wiring portion that contacts the terminal portion and electrically connects the second metal layer to the first mounting portion. [Effects of the Invention]

[0007] One embodiment of the electronic device disclosed in this application has the effect of enabling high-speed driving of electronic components. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic cross-sectional view showing the configuration of an electronic device according to an embodiment. [Figure 2] Figure 2 is an enlarged cross-sectional view showing the connection between the second metal layer and the first metal layer. [Figure 3] Figure 3 is a flowchart showing an example of the process for manufacturing an electronic device according to the embodiment. [Figure 4] Figure 4 shows a specific example of the first metal layer formation process. [Figure 5] Figure 5 shows a specific example of the second metal layer formation process. [Figure 6] Figure 6 shows a specific example of the IC chip bonding process. [Figure 7] Figure 7 shows a specific example of a metal layer bonding process. [Figure 8] Figure 8 shows a specific example of the resin encapsulation process. [Figure 9] Figure 9 shows a specific example of the etching process. [Figure 10]FIG. 10 is a diagram showing a specific example of a semiconductor chip mounting process. [Figure 11] FIG. 11 is a diagram showing a specific example of a resin sealing process. [Figure 12] FIG. 12 is a diagram showing an example of mounting passive components on an electronic device. [Figure 13] FIG. 13 is a schematic cross-sectional view showing the configuration of an electronic device according to a modified example of the embodiment. [Figure 14] FIG. 14 is a flowchart showing an example of the flow of a method for manufacturing an electronic device according to a modified example of the embodiment. [Figure 15] FIG. 15 is a diagram showing a specific example of a semiconductor chip mounting process. [Figure 16] FIG. 16 is a diagram showing a specific example of a resin sealing process. [Figure 17] FIG. 17 is a diagram showing a specific example of an etching process. [Figure 18] FIG. 18 is a diagram showing an example of mounting passive components on an electronic device.

BEST MODE FOR CARRYING OUT THE INVENTION

[0009] Hereinafter, embodiments of the electronic device disclosed in the present application will be described in detail based on the drawings. Note that the technology disclosed by this embodiment is not limited thereto.

[0010] (Embodiment) FIG. 1 is a schematic cross-sectional view showing the configuration of an electronic device 100 according to the embodiment. In the following, when mounting a passive component such as an inductor on the electronic device 100, the surface located on the passive component side is referred to as the "upper surface", the surface located on the side opposite to the passive component is referred to as the "lower surface", and the vertical direction is defined accordingly. However, the electronic device 100 may be manufactured and used, for example, with the top and bottom reversed, or may be manufactured and used in any orientation.

[0011] The electronic device 100 shown in FIG. 1 has a semiconductor chip 132 and a conductive member 133 of a component mounting substrate 130 on the upper surface of a first metal layer 110. The electronic device 100 has an IC chip 140 that drives the semiconductor chip 132 between the first metal layer 110 and a second metal layer 120, and is configured by resin-sealing the whole with a sealing resin 150.

[0012] The semiconductor chip 132 is a semiconductor element using, for example, silicon (Si) or silicon carbide (SiC). The semiconductor chip 132 may also be a semiconductor element using gallium nitride (GaN), gallium arsenide (GaAs), or the like. As the semiconductor chip 132, a semiconductor element as an active element (for example, a silicon chip such as a CPU), an insulated gate bipolar transistor (IGBT: Insulated Gate Bipolar Transistor), a metal oxide semiconductor field effect transistor (MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor), a diode, or the like can be used. The semiconductor chip 132 is an example of an electronic component.

[0013] The conductive member 133 is a metal plate such as a copper (Cu) plate, for example.

[0014] The IC chip 140 is an integrated circuit in which electronic circuits having various functions are integrated on a semiconductor, and is an integrated circuit that outputs an electrical signal for driving the semiconductor chip 132. As the IC chip 140, for example, a gate controller or the like can be used. The IC chip 140 is an example of a driving component.

[0015] The first metal layer 110 is a layer on which the semiconductor chip 132 and the conductive member 133 of the component mounting substrate 130 are mounted, and on which the IC chip 140 is mounted. As the material of the first metal layer 110, for example, copper or a copper alloy can be used. Also, the thickness of the first metal layer 110 can be, for example, about 0.5 to 5.0 mm. The first metal layer 110 is sometimes called a lead frame.

[0016] The first metal layer 110 has a first mounting portion 111, a second mounting portion 112, a terminal portion 113, a terminal portion 114, and a lead portion 115.

[0017] The first mounting section 111 and the second mounting section 112 are planar portions that serve as the base material for the first metal layer 110. The semiconductor chip 132 and conductive member 133 of the component mounting substrate 130 are mounted on the upper surface of the first mounting section 111. That is, the semiconductor chip 132 and the conductive member 133 are joined to the upper surface of the first mounting section 111 via conductive bonding materials 132a and 133a, respectively. Examples of conductive bonding materials 132a and 133a include solder paste and silver (Ag) paste. The IC chip 140 is mounted on the upper surface of the second mounting section 112. That is, the IC chip 140 is joined to the upper surface of the second mounting section 112 via a conductive bonding material 141. Examples of conductive bonding material 141 include solder, thermal conductive paste, and TIM (Thermal Interface Material). The lower surface of the first mounting section 111 is exposed from the sealing resin 150, allowing it to dissipate heat generated by the semiconductor chip 132 mounted on the upper surface of the first mounting section 111. The lower surface of the second mounting section 112 is exposed from the sealing resin 150, allowing it to dissipate heat generated by the IC chip 140 mounted on the upper surface of the second mounting section 112.

[0018] The first mounting section 111 is separated by a slit 111a into a plurality of (in this case, two) independent regions 111_1 and 111_2. A semiconductor chip 132 of the component mounting substrate 130 is mounted in one of the two regions 111_1 and 111_2, and a conductive member 133 of the component mounting substrate 130 is mounted in the other region 111_2. As a result, the two regions 111_1 and 111_2 are electrically connected via the component mounting substrate 130.

[0019] The terminal portion 113 is a projection that connects the first mounting portion 111 of the first metal layer 110 to the second metal layer 120. The terminal portion 113 protrudes from the upper surface of the first mounting portion 111 toward the second metal layer 120 along the side edge of the first mounting portion 111 toward the second mounting portion 112. At its upper end, the terminal portion 113 contacts the wiring portion 121 of the second metal layer 120, which will be described later, and supports the second metal layer 120 from below.

[0020] The terminal portion 114 is a projection that connects the second mounting portion 112 of the first metal layer 110 to the second metal layer 120. The terminal portion 114 protrudes from the upper surface of the second mounting portion 112 toward the second metal layer 120 along the side edge of the second mounting portion 112. At its upper end, the terminal portion 114 contacts the wiring portion 122 of the second metal layer 120, which will be described later, and supports the second metal layer 120 from below.

[0021] The lead portion 115 is electrically connected to the semiconductor chip 132 mounted on the first mounting portion 111 of the first metal layer 110 via the first mounting portion 111. The tip of the lead portion 115 protrudes from the sealing resin 150 and functions as an external terminal connecting the semiconductor chip 132 to the outside of the electronic device 100.

[0022] The second metal layer 120 sandwiches the IC chip 140 between itself and the second mounting portion 112 of the first metal layer 110, and also forms a wiring portion that connects to passive components mounted on the upper surface of the electronic device 100. The material of the second metal layer 120 can be, for example, copper or a copper alloy. The thickness of the second metal layer 120 can be, for example, about 0.1 to 0.5 mm. The second metal layer 120 is sometimes referred to as a lead frame.

[0023] The second metal layer 120 has a plurality of wiring sections, including wiring sections 121 and 122. These plurality of wiring sections may be connected to each other at predetermined positions in the depth direction, which are not shown in Figure 1. In addition, any of the plurality of wiring sections, excluding wiring sections 121 and 122, forms a wiring section that can be connected to a passive component mounted on the upper surface of the electronic device 100. The second metal layer 120 is joined to the IC chip 140 via solder 142 at the lower surface of the wiring section that can be connected to the passive component.

[0024] The wiring section 121 is a wiring that connects the second metal layer 120 and the first mounting section 111 of the first metal layer 110, and is supported from below by the terminal section 113 of the first metal layer 110. The wiring section 121 is positioned above the first mounting section 111 along the side edge of the first mounting section 111 on the side of the second mounting section 112. The lower surface of the wiring section 121 is in contact with the terminal section 113 of the first metal layer 110, thereby electrically connecting the second metal layer 120 and the first mounting section 111 of the first metal layer 110.

[0025] Since the wiring section 121 and terminal section 113 connect the second metal layer 120 and the first mounting section 111 of the first metal layer 110, the wiring length between the second metal layer 120 and the first metal layer 110 can be shortened compared to when the two metal layers are connected by a wiring member. As a result, the inductance between the IC chip 140 bonded to the second metal layer 120 and the semiconductor chip 132 on the first mounting section 111 of the first metal layer 110 can be reduced and the effects of noise can be suppressed, enabling high-speed driving of the semiconductor chip 132.

[0026] Figure 2 is an enlarged cross-sectional view showing the connection between the second metal layer 120 and the first metal layer 110.

[0027] The first mounting portion 111 and the second mounting portion 112 of the first metal layer 110 are separated from each other via a slit 110a. By separating the first mounting portion 111 and the second mounting portion 112 via the slit 110a, it is possible to avoid problems caused by the difference in driving voltage between the semiconductor chip 132 on the first mounting portion 111 and the IC chip 140 on the second mounting portion 112.

[0028] The terminal portion 113 of the first metal layer 110 is provided along the side edge 110b adjacent to the slit 110a of the first mounting portion 111. In other words, the terminal portion 113 protrudes from the upper surface of the first mounting portion 111 at a position along the side edge 110b adjacent to the slit 110a of the first mounting portion 111. The upper end of the terminal portion 113 contacts the wiring portion 121 of the second metal layer 120, which is positioned along the side edge 110b adjacent to the slit 110a of the first mounting portion 111, thereby electrically connecting the first metal layer 110 and the second metal layer 120. By providing the terminal portion 113 adjacent to the slit 110a separating the first mounting portion 111 and the second mounting portion 112, and connecting the first metal layer 110 and the second metal layer 120, the wiring length between the second metal layer 120 and the first metal layer 110 can be shortened. This reduces the inductance between the IC chip 140 bonded to the second metal layer 120 and the semiconductor chip 132 on the first metal layer 110, and further suppresses the effects of noise, enabling faster driving of the semiconductor chip 132.

[0029] Furthermore, the terminal portion 113 of the first metal layer 110 is covered with a sealing resin 150. This reduces the inductance at the terminal portion 113 and suppresses the effects of noise, enabling faster driving of the semiconductor chip 132.

[0030] Returning to the explanation of Figure 1, the wiring section 122 is a wiring that connects the second metal layer 120 and the second mounting section 112 of the first metal layer 110, and is supported from below by the terminal section 114 of the first metal layer 110. The wiring section 122 is positioned above the second mounting section 112 along its side edge. The lower surface of the wiring section 122 contacts the terminal section 114 of the first metal layer 110, thereby electrically connecting the second metal layer 120 and the second mounting section 112 of the first metal layer 110.

[0031] Since the wiring section 122 and terminal section 114 connect the second metal layer 120 and the second mounting section 112 of the first metal layer 110, the bonding strength between the second metal layer 120 and the first metal layer 110 can be improved, and the detachment of the first metal layer 110 from the sealing resin 150 can be suppressed.

[0032] The component mounting board 130 includes a wiring board 131, a semiconductor chip 132, and a conductive member 133.

[0033] The wiring board 131 mounts semiconductor chips 132 and conductive members 133 on its lower surface. The wiring board 131 has an insulating substrate 311, an adhesive layer 312, and a wiring layer 313.

[0034] The insulating substrate 311 is an insulating film-like member and serves as the base material for the wiring board 131. For example, insulating resins such as polyimide resins, polyethylene resins, and epoxy resins can be used as the material for the insulating substrate 311.

[0035] The adhesive layer 312 adheres the semiconductor chip 132 and the conductive member 133 to the lower surface of the insulating substrate 311. For example, epoxy, polyimide, or silicone adhesives can be used as the material for the adhesive layer 312.

[0036] The wiring layer 313 is formed on the upper surface of the insulating substrate 311. The wiring layer 313 is electrically connected to the semiconductor chip 132 and the conductive member 133 via vias that penetrate the insulating substrate 311 and the adhesive layer 312. By connecting the wiring layer 313 to the semiconductor chip 132 and the conductive member 133 via vias, the semiconductor chip 132 and the conductive member 133 are mounted on the lower surface of the wiring board 131. The upper surface of the wiring layer 313 is exposed from the sealing resin 150 on the upper surface of the electronic device 100.

[0037] The semiconductor chip 132 and conductive member 133, which are mounted on the lower surface of the wiring board 131, are each mounted on the first mounting portion 111 of the first metal layer 110. That is, the semiconductor chip 132 and conductive member 133 are each bonded to the upper surface of the first mounting portion 111 via conductive bonding materials 132a and 133a, respectively.

[0038] The first metal layer 110, the second metal layer 120, the component mounting substrate 130, and the IC chip 140 are resin-sealed with a sealing resin 150. That is, the space around the first metal layer 110, the second metal layer 120, the component mounting substrate 130, and the IC chip 140 is filled with the sealing resin 150. As the sealing resin 150, an insulating resin such as a thermosetting epoxy resin can be used.

[0039] Next, the manufacturing method of the electronic device 100 configured as described above will be explained with reference to Figure 3. Figure 3 is a flowchart showing an example of the manufacturing process of the electronic device 100 according to the embodiment.

[0040] First, a first metal layer 110 and a second metal layer 120, which form the framework of the electronic device 100, are formed (steps S101 and S102). The first metal layer 110 and the second metal layer 120 are formed by etching or pressing a metal plate, respectively. Specifically, as shown in Figure 4, for example, a first metal layer 110 having a first mounting portion 111, a second mounting portion 112, a terminal portion 113, a terminal portion 114, and a lead portion 115 is formed from a metal plate. Figure 4 is a diagram showing a specific example of the first metal layer formation process.

[0041] Furthermore, as shown in Figure 5, for example, a second metal layer 120 is formed from a metal plate, having multiple wiring sections including wiring sections 121 and 122, and connecting sections 125 that connect the multiple wiring sections. Figure 5 is a diagram showing a specific example of the second metal layer formation process. Of the multiple wiring sections, any wiring section other than wiring sections 121 and 122 forms a wiring section 123 that can be connected to a passive component mounted on the upper surface of the electronic device 100. The wiring section 123 is formed at a position corresponding to the upper surface of the IC chip 140.

[0042] Once the first metal layer 110 and the second metal layer 120 are formed by etching or pressing a metal plate, the IC chip 140 is joined to the second metal layer 120 (step S103). Specifically, as shown in Figure 6, for example, the IC chip 140 is joined to the second metal layer 120 via solder 142 on the lower surface (upper surface in Figure 6) of the wiring portion 123. Figure 6 is a diagram showing a specific example of the IC chip joining process. In parallel with the joining of the IC chip 140, solder for joining the first metal layer 110 and the second metal layer 120 is applied to the second metal layer 120. For example, as shown in Figure 6, solder 126 is applied to the wiring portions 121 and 122. The application of solder 126 may be done by printing solder paste or by using a dispenser. Conductive paste may also be used instead of solder paste. Note that the solder 126 is not shown in figures other than Figure 6.

[0043] When the IC chip 140 is bonded to the second metal layer 120 and solder 126 is applied, the second metal layer 120 is laminated on the first metal layer 110, and the first metal layer 110 and the second metal layer 120 are bonded together (step S104). That is, the IC chip 140 is bonded to the upper surface of the second mounting portion 112 via the conductive bonding material 141, and, for example, a reflow process is performed, thereby bonding the wiring portions 121 and 122 to the terminal portions 113 and 114, respectively, via solder 126. As a result, an intermediate structure is formed in which the IC chip 140 is sandwiched between the second metal layer 120 and the second mounting portion 112 of the first metal layer 110, as shown in Figure 7. Figure 7 is a diagram showing a specific example of the metal layer bonding process.

[0044] The second mounting portion 112 of the first metal layer 110, the second metal layer 120, and the IC chip 140 in the intermediate structure are resin-sealed, for example, by transfer molding (step S105). That is, the second mounting portion 112 of the first metal layer 110, the second metal layer 120, and the IC chip 140 in the intermediate structure are placed in the cavity of a mold, and after the uncured sealing resin 150 is injected into the cavity from a plunger, the sealing resin 150 is heated and cured. As a method of resin sealing, other methods such as compression molding or injection molding may also be used. As the second mounting portion 112 of the first metal layer 110, the second metal layer 120, and the IC chip 140 in the intermediate structure are resin-sealed, the sealing resin 150 fills the space around the second mounting portion 112, the second metal layer 120, and the IC chip 140, for example, as shown in Figure 8. Figure 8 shows a specific example of the resin encapsulation process.

[0045] When the second mounting portion 112 of the first metal layer 110, the second metal layer 120, and the IC chip 140 in the intermediate structure are resin-sealed, the second metal layer 120 is etched (step S106) to remove the portion of the second metal layer 120 excluding the multiple wiring portions. That is, as shown in Figure 9 for example, the second metal layer 120 is dissolved by etching in such a way that multiple wiring portions, including wiring portions 121 to 123, remain, and the connecting portion 125 is removed. Figure 9 shows a specific example of the etching process.

[0046] Once the etching of the second metal layer 120 is complete, the semiconductor chip 132 and conductive member 133 of the component mounting substrate 130 are mounted on the first mounting portion 111 of the first metal layer 110 (step S107). That is, the semiconductor chip 132 and conductive member 133 are bonded to the upper surface of the first mounting portion 111 via conductive bonding materials 132a and 133a, respectively. As a result, an intermediate structure consisting of the first metal layer 110 and the second metal layer 120 on which the semiconductor chip 132 and conductive member 133 of the component mounting substrate 130 are mounted is formed, for example, as shown in Figure 10. Figure 10 is a diagram showing a specific example of the semiconductor chip mounting process.

[0047] The first mounting portion 111 of the first metal layer 110 and the component mounting substrate 130 in the intermediate structure are resin-sealed, for example, by transfer molding (step S108), and the electronic device 100 is completed. That is, the first mounting portion 111 of the first metal layer 110 and the component mounting substrate 130 in the intermediate structure are placed in the cavity of a mold, and after the uncured sealing resin 150 is injected into the cavity from a plunger, the sealing resin 150 is heated and cured. As a method of resin sealing, in addition to the transfer molding method, for example, the compression molding method or the injection molding method may be used. When the first mounting portion 111 of the first metal layer 110 and the component mounting substrate 130 in the intermediate structure are resin-sealed, the sealing resin 150 is filled into the space around the first mounting portion 111 and the component mounting substrate 130, for example, as shown in Figure 11. Figure 11 is a diagram showing a specific example of the resin sealing process.

[0048] The electronic device 100 obtained through the above process has a semiconductor chip 132 mounted on the upper surface of the first mounting portion 111 of the first metal layer 110, and an IC chip 140 mounted in the region sandwiched between the second mounting portion 112 of the first metal layer 110 and the second metal layer 120. The electronic device 100 then electrically connects the second metal layer 120 and the first mounting portion 111 of the first metal layer 110 by wiring portions 121 and terminal portions 113 that are in contact with each other. As a result, the second metal layer 120 and the first metal layer 110 can be connected with a relatively short wiring length, reducing the inductance in the wiring path connecting the IC chip 140 and the semiconductor chip 132, and suppressing the effects of noise. As a result, high-speed driving of the semiconductor chip 132 can be achieved.

[0049] Passive components are mounted on the electronic device 100 (step S109). That is, as shown in Figure 12, for example, passive components 410, 510, and 610 are mounted on the upper surface of predetermined wiring sections such as wiring section 123 in the second metal layer 120. Figure 12 shows an example of mounting passive components 410, 510, and 610 on the electronic device 100. Passive component 410 is flip-chip connected to the upper surface of predetermined wiring sections such as wiring section 123 by, for example, solder bumps 411. Also, terminal 510a of passive component 510 is connected to the upper surface of predetermined wiring sections such as wiring section 123 by solder 510b. Also, passive component 610 is flip-chip connected to the upper surface of predetermined wiring sections such as wiring section 123 by, for example, solder bumps 611. Passive components such as capacitors, inductors, and resistors can be used as passive components 410, 510, and 610.

[0050] (modified version) Figure 13 is a schematic cross-sectional view showing the configuration of an electronic device 100 according to a modified example of the embodiment. In this modified example, the same reference numerals are used for parts that are the same as in the embodiment, thus omitting redundant explanations.

[0051] As shown in Figure 13, in the modified example, the wiring layer 313 of the wiring board 131 has wiring patterns arranged with gaps 313a that are not filled with sealing resin 150. By not filling the gaps 313a between the wiring patterns of the wiring layer 313 with sealing resin 150, the amount of sealing resin 150 used can be reduced. In addition, in the modified example, the upper surface of the second metal layer 120 (i.e., the upper surface of the multiple wiring sections including wiring sections 121 and 122) is formed at a lower position than the upper surface of the component mounting board 130. This makes it possible to reduce the thickness of the wiring sections that can be connected to passive components mounted on the upper surface of the electronic device 100, thereby promoting the thinning of the electronic device 100.

[0052] Next, a method for manufacturing the electronic device 100 according to a modified embodiment will be described with reference to Figure 14. Figure 14 is a flowchart showing an example of the flow of a method for manufacturing the electronic device 100 according to a modified embodiment. In Figure 14, the same reference numerals are used for the same parts as in Figure 3.

[0053] When the first metal layer 110 and the second metal layer 120 are joined (step S104), the semiconductor chip 132 and conductive member 133 of the component mounting substrate 130 are mounted on the first mounting portion 111 of the first metal layer 110 (step S111). That is, the semiconductor chip 132 and the conductive member 133 are joined to the upper surface of the first mounting portion 111 via conductive bonding materials 132a and 133a, respectively. As a result, an intermediate structure consisting of the first metal layer 110 and the second metal layer 120 on which the semiconductor chip 132 and conductive member 133 of the component mounting substrate 130 are mounted is formed, for example, as shown in Figure 15. Figure 15 is a diagram showing a specific example of the semiconductor chip mounting process. At the stage in which the intermediate structure shown in Figure 15 is formed, the wiring pattern has not yet been formed on the wiring layer 313 of the wiring substrate 131.

[0054] The intermediate structure is then resin-encapsulated as a whole, for example by transfer molding (step S112). That is, the intermediate structure is placed in the cavity of the mold, and after the uncured encapsulating resin 150 is injected into the cavity from the plunger, the encapsulating resin 150 is heated and cured. In addition to the transfer molding method, other methods such as compression molding or injection molding may also be used for resin encapsulation. As the entire intermediate structure is resin-encapsulated, the encapsulating resin 150 fills the space around the first metal layer 110, the second metal layer 120, the component mounting substrate 130, and the IC chip 140, for example, as shown in Figure 16. Figure 16 shows a specific example of the resin encapsulation process. That is, the encapsulating resin 150 fills the space between the second mounting portion 112 of the first metal layer 110 and the second metal layer 120, and the IC chip 140 is encapsulated. Furthermore, the upper surface of the first mounting portion 111 of the first metal layer 110 and the component mounting substrate 130 are covered with sealing resin 150, thereby sealing the wiring board 131, semiconductor chip 132, and conductive member 133 of the component mounting substrate 130. At this time, the wiring board 131 is sealed such that the upper surface of the wiring layer 313 is exposed from the sealing resin 150.

[0055] Once the entire intermediate structure is resin-sealed, the second metal layer 120 and the wiring layer 313 exposed from the sealing resin 150 of the wiring substrate 131 are etched together (step S113). The etching of the second metal layer 120 and the wiring layer 313 removes portions of the second metal layer 120 excluding multiple wiring sections, and forms a wiring pattern on the wiring layer 313. That is, for example as shown in Figure 17, the second metal layer 120 is dissolved by etching in such a way that multiple wiring sections, including wiring sections 121 to 123, remain, and the connecting section 125 is removed. Also, for example as shown in Figure 17, the wiring layer 313 is dissolved by etching in such a way that a wiring pattern is formed with gaps 313a between them. The gaps 313a are formed in the wiring layer 313 at the locations where they are dissolved by etching, and therefore become spaces that are not filled by the sealing resin 150. Figure 17 shows a specific example of the etching process. Once the etching of the second metal layer 120 and the wiring layer 313 is complete, the electronic device 100 is finished. If the wiring layer 313 is pre-patterned, sealing resin 150 is filled between the patterns.

[0056] Passive components are mounted on the electronic device 100 (step S114). That is, as shown in Figure 18, for example, passive components 410, 510, and 610 are mounted on the upper surface of predetermined wiring sections such as wiring section 123 in the second metal layer 120. Figure 18 shows an example of mounting passive components 410, 510, and 610 on the electronic device 100. Passive component 410 is flip-chip connected to the upper surface of predetermined wiring sections such as wiring section 123 by, for example, solder bumps 411. Also, terminal 510a of passive component 510 is connected to the upper surface of predetermined wiring sections such as wiring section 123 by solder 510b. Also, passive component 610 is flip-chip connected to the upper surface of predetermined wiring sections such as wiring section 123 by, for example, solder bumps 611. Passive components such as capacitors, inductors, and resistors can be used as passive components 410, 510, and 610.

[0057] As described above, the electronic device according to the embodiment (for example, electronic device 100) comprises a first metal layer (for example, first metal layer 110), a component mounting substrate (for example, component mounting substrate 130), a second metal layer (for example, second metal layer 120), and a sealing resin (for example, sealing resin 150). The first metal layer comprises a first mounting portion (for example, first mounting portion 111) and a second mounting portion (for example, second mounting portion 112). The component mounting substrate comprises a wiring board (for example, wiring board 131) and electronic components mounted on the wiring board (for example, semiconductor chip 132), with the electronic components mounted in the first mounting portion. The second metal layer has a drive component (for example, IC chip 140) that drives the electronic components bonded to it, and is provided on the first metal layer with the drive component sandwiched between it and the second mounting portion. The sealing resin fills the space between the first metal layer and the second metal layer and covers the component mounting substrate, sealing the electronic components and the drive component. The first metal layer has a terminal portion (e.g., terminal portion 113) that protrudes from the first mounting portion toward the second metal layer. The second metal layer has a wiring portion (e.g., wiring portion 121) that contacts the terminal portion and electrically connects the second metal layer to the first mounting portion. As a result, according to the electronic device of this embodiment, high-speed driving of electronic components can be achieved.

[0058] Furthermore, the first mounting section and the second mounting section may be separated from each other via a slit (for example, slit 110a). This makes it possible to avoid problems caused by the difference in drive voltage between the electronic components on the first mounting section and the drive components on the second mounting section, according to the electronic device according to the embodiment.

[0059] Furthermore, the terminal portion may be provided along the side edge (for example, side edge 110b) adjacent to the slit of the first mounting portion. This makes it possible to achieve faster driving of electronic components according to the electronic device according to the embodiment.

[0060] Furthermore, the terminal portion may be covered with a sealing resin. As a result, according to the electronic device of this embodiment, faster driving of electronic components can be achieved.

[0061] Furthermore, the first metal layer may have other terminal portions (e.g., terminal portion 114) that protrude from the second mounting portion toward the second metal layer along the side edge of the second mounting portion. The second metal layer may also have other wiring portions (e.g., wiring portion 122) that contact the other terminal portions and electrically connect the second metal layer to the second mounting portion. As a result, according to the electronic device of this embodiment, detachment of the first metal layer from the sealing resin can be suppressed.

[0062] Furthermore, the electronic component may be mounted on one side (e.g., the top surface) of the first mounting section, and the side of the first mounting section opposite to the side on which the electronic component is mounted (e.g., the bottom surface) may be exposed from the sealing resin. As a result, according to the embodiment of the electronic device, the heat generated by the electronic component mounted on one side of the first mounting section can be efficiently dissipated.

[0063] Furthermore, the drive component may be mounted on one side (e.g., the top surface) of the second mounting section, and the side of the second mounting section opposite to the side on which the drive component is mounted (e.g., the bottom surface) may be exposed from the sealing resin. As a result, according to the embodiment of the electronic device, the heat generated by the drive component mounted on one side of the second mounting section can be efficiently dissipated. [Explanation of Symbols]

[0064] 100 Electronic equipment 110 1st metal layer 110a Slit 110b Side edge 111 First mounting section 111_1, 111_2 area 111a Slit 112 Second mounting section 113 Terminal section 114 Terminal section 115 Lead section 120 2nd metal layer 121~123 Wiring section 125 Connection section 130-component circuit board 131 Wiring board 132 Semiconductor Chips 132a Conductive bonding material 133 Conductive material 133a Conductive bonding material 140 IC chips 141 Conductive bonding material 150 Sealing resin 311 Insulating substrate 312 Adhesive layer 313 Wiring layer 313a Gap 410, 510, 610 Passive components

Claims

1. A first metal layer comprising a first mounting section and a second mounting section, A component mounting board comprising a wiring board and electronic components mounted on the wiring board, wherein the electronic components are mounted on the first mounting portion, A drive component is joined to a second metal layer provided on the first metal layer, sandwiching the drive component between the second mounting portion and the second metal layer, The material comprises a sealing resin that fills the space between the first metal layer and the second metal layer, covers the component mounting substrate, and seals the electronic component and the drive component, The first metal layer is It has a terminal portion that protrudes from the first mounting portion toward the second metal layer, The aforementioned second metal layer is An electronic device characterized by having a wiring portion that contacts the terminal portion and electrically connects the second metal layer to the first mounting portion.

2. The first mounting section and the second mounting section are, They are separated from each other through the slits. The electronic device according to feature 1.

3. The aforementioned terminal portion is Provided along the side edge adjacent to the slit of the first mounting portion The electronic device according to feature 2.

4. The aforementioned terminal portion is The sealing resin is covered The electronic device according to feature 1.

5. The first metal layer is The second mounting portion has other terminal portions that protrude from the second mounting portion toward the second metal layer along the side edge of the second mounting portion, The aforementioned second metal layer is It has other wiring portions that contact the other terminal portions and electrically connect the second metal layer to the second mounting portion. The electronic device according to feature 1.

6. The aforementioned electronic component is Mounted on one side of the first mounting section, The first mounting section is, The side opposite to the side on which the electronic component is mounted is exposed from the sealing resin. The electronic device according to feature 1.

7. The aforementioned drive component is Mounted on one side of the second mounting section, The second mounting section is, The side opposite to the side on which the drive component is mounted is exposed from the sealing resin. The electronic device according to feature 1.

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