Multi-station processing tool with station variable support feature for back surface processing

Abstract

To provide multi-station processing tools with station-varying support features for backside processing.SOLUTION: A first processing station comprises an element 401a including a first support feature 402a, and a second processing station comprises an element 401b including a second support feature 402b. A wafer carrier ring 400 includes a plurality of wafer hold features 406 supporting a wafer or the other substrate. When the wafer carrier ring 400 is carried up for a moving or processing operation between stations, the wafer hold feature 406 is engaged with a lower side of the wafer, and a sufficient number of wafer hold features 406 is disposed at an appropriate interval for stably holding the wafer along with an inner periphery of the wafer carrier ring 400.SELECTED DRAWING: Figure 4A

Description

Technical Field

[0004] , ,

[0005]

[0001] Incorporation by Reference As part of this application, a PCT application form is filed simultaneously with this specification. Each application specified in the simultaneously filed PCT application form, for which this application claims benefits or priorities, is incorporated herein by reference in its entirety for all purposes.

Background Art

[0002] This disclosure relates to a multi-station processing tool for backside processing.

[0003] The background description provided here is for the purpose of generally presenting the content of this disclosure. Within the scope described in this background art section, research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not recognized as prior art against this disclosure, whether explicitly or implicitly.

Summary of the Invention

[0004] In one aspect, a multi-station plasma processing system is provided. The system includes a first processing station having a first set of support features configured to support a substrate at a first set of positions on the back surface of the substrate when the substrate is processed at the first processing station, and a second processing station having a second set of support features configured to hold the substrate at a second set of positions on the back surface of the substrate when the substrate is processed at the second processing station, wherein the first set of positions does not overlap with the second set of positions.

[0005] In another embodiment, a multi-station plasma processing system is provided for processing substrates having a nominal diameter D, the system comprising a first processing station having a first set of support features, a second processing station having a second set of support features, and an indexer configured to rotate about a central axis, thereby transferring the substrate from the first processing station to the second processing station, wherein the first set of support features has a first diameter of D and has a first set of contact surfaces positioned within a first circular region centered on a first center point of the first processing station, and the second set of support features has a second diameter of D and has a second set of contact surfaces positioned within a second circular region centered on a second center point of the second processing station, wherein the rotational transformation of the first center point and the first set of contact surfaces about the central axis such that the rotationally transformed first center point aligns with the second center point does not result in any overlap between the second set of contact surfaces and the rotationally transformed first set of contact surfaces when viewed along the central axis.

[0006] In another embodiment, a method is provided for processing the back surface of a substrate in a multi-station plasma processing system, the system comprising a first station having a first set of support features, and the system comprising a second station having a second set of support features, the method comprising moving the substrate onto the first set of support features and processing the back surface of the substrate while the substrate is on the first set of support features, wherein the first set of support features blocks the processing of the back surface of the substrate at the locations of the first set on the back surface of the substrate, and moving the substrate onto a second set of support features and processing the back surface of the substrate while the substrate is on the second set of support features, wherein the second set of support features does not block the processing of the back surface of the substrate at the locations of the first set on the back surface of the substrate. [Brief explanation of the drawing]

[0007] [Figure 1]Figure 1 is a schematic diagram of a substrate processing system according to a specific disclosed embodiment.

[0008] [Figure 2] Figure 2 is a top view of a multi-station processing tool according to a specific disclosed embodiment.

[0009] [Figure 3] Figure 3 is a schematic diagram of a multi-station processing tool according to a specific disclosed embodiment.

[0010] [Figure 4A] Figure 4A is a perspective view of the support feature within the multi-station processing tool.

[0011] [Figure 4B] Figure 4B is a top view of the support feature in the multi-station processing tool.

[0012] [Figure 4C] Figure 4C is a side view of a support feature in a multi-station processing tool.

[0013] [Figure 5] Figure 5 is a schematic diagram of an exemplary control module for controlling a substrate processing system according to a particular disclosed embodiment.

[0014] [Figure 6] Figure 6 shows various bottom views of a wafer processed by a multi-station processing tool according to a particular disclosed embodiment. [Modes for carrying out the invention]

[0015] The following description includes many specific details to provide a complete understanding of the presented embodiments. The disclosed embodiments can be practiced without some or all of these specific details. In other examples, well-known process behaviors are not described in detail so as not to unnecessarily obscure the disclosed embodiments. The disclosed embodiments are described in conjunction with specific embodiments, but it will be understood that this is not intended to limit the disclosed embodiments.

[0016] Part of this disclosure relates to plasma-enhanced chemical vapor deposition (PECVD). PECVD is a type of plasma deposition used to deposit thin films on substrates such as wafers from a gaseous state (i.e., vapor) to a solid state. A PECVD system converts a liquid precursor into a vapor precursor, which is then fed into a chamber. A PECVD system may include a vaporizer that evaporates the liquid precursor in a controlled manner to produce a vapor precursor. Typically, the chamber used in PECVD uses a ceramic base to support the wafer during processing, which enables processing at high temperatures.

[0017] Most PECVD deposition and other processes for forming devices are performed on the front side of the wafer, for example, the top side. As the deposition layer is built, stress may be introduced into the wafer. This stress can cause undesirable wafer warping. Significant warping can negatively impact subsequent processing steps. In some cases, wafer warping and stress can be counteracted by depositing material on the back side of the wafer. However, depositing on the back side of the wafer requires flipping the wafer over and loading it with the back side facing up. Flipping the wafer introduces further problems such as additional handling, potential exposure to particles, and / or reduced processing yield.

[0018] Embodiments of the present disclosure provide embodiments of a multi-station processing tool equipped with station-varying support features (sometimes called lifting features) for backside processing such as deposition and etching. During backside deposition, etching, and / or other processing within a single station, the lifting features can block deposition, etching, and / or other processing on the wafer or other substrate being processed at the contact points of the lifting features. In some current designs, a carrier ring has support features that hold the wafer during deposition. Even as the carrier ring moves from station to station within a multi-station reactor, the support features do not move any further relative to the wafer. The carrier ring carries the wafer from station to station. In such designs, it is impossible to perform deposition, etching, and / or other processing on all locations on the wafer.

[0019] In one embodiment, a first station may have a first set of support features that contact the wafer or other substrate being processed at a first set of locations, and a second station may have a second set of support features that contact the wafer or other substrate being processed at a second set of locations different from the first set of locations. As a result, areas blocked by the first set of support features during deposition, etching, and / or other processing at the first station may be exposed during deposition, etching, and / or other processing at the second station. This allows for control of the deposition profile, etching profile, and / or other processing profile in the azimuthal direction, enabling deposition, etching, and / or other processing of the film on all portions of the back surface without full-thickness voids or other azimuthal non-uniformities. During etching, for example, this allows for etching of all portions of the back surface, with no portions remaining completely etched. In some embodiments, the support features are not part of the carrier ring. Rather, the support features are part of the station, and each station of the multi-station reactor has its own support features.

[0020] Due to the multi-level semiconductor processing flow used to manufacture high-performance memory and logic chips, the substrate will be significantly curved in the compression and tension directions. This moderate to severe substrate curvature impairs the processing conditions of various manufacturing processes, leading to process control problems, lithography chucking, and overlay problems, and in some cases, increased yield loss. In one embodiment, one way to control curvature is to deposit a sacrificial film or multiple films on the opposite side (i.e., the back side) of the substrate to compensate for the curvature in the opposite direction and flatten the substrate. Conventional dual-electrode radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) systems have one gas-flowing electrode that can be either RF or grounded. Typically, the gas-flowing electrode (also called the showerhead 104) is on the upper side of the PECVD reactor and flows the reactants onto the front surface of the wafer, causing deposition only on the front surface of the wafer.

[0021] According to one embodiment, an RF PECVD system having a dual gas-flowing electrode is disclosed. Any one of the electrodes can be an RF electrode that provides an AC electric field enabling plasma enhancement for CVD film deposition. This dual gas-flowing electrode PECVD system can selectively deposit films on both sides or only one side of the wafer. In one example, the gas-flowing pedestal (referred to herein as the "shower pedestal" or "show-ped") can hold the wafer for transfer within or outside the chamber between adjacent stations via a standard transfer mechanism based on the equipment settings, and can flow gas from the back side of the wafer. In some other embodiments, a system configured for backside deposition, etching, or other operations may not include a shower pedestal, and other structures may be utilized to flow gas to the back side of the wafer.

[0022] In one embodiment, the backside gas flow can enable PECVD deposition on the backside of the wafer, and the frontside gas flow can enable deposition on the frontside of the wafer. The system can be configured to selectively enable the sides of deposition by turning on and off the reactants that cause film deposition and replacing them with non-reactive gases (e.g., inert gases). Another aspect of this system is that it can control the distance from the reactant flowing gas to the sides of the substrate. This control makes it possible to achieve the deposition profiles and film properties required for applications such as backside compensation.

[0023] In another embodiment, the showerped and the showerhead include a configuration that provides showerhead-like features that enable proper reactant mixing and provide proper fluid dynamics for the PECVD deposition process on the backside or the frontside of the wafer. Additionally, some embodiments enable a controllable gap that can suppress or enable plasma on the desired (one or both) sides of the wafer for deposition. The controllable gap can include, for example, the gap spacing between the upper side of the wafer and the upper surface of the showerhead (as shown in FIG. 1), and the gap spacing between the backside of the wafer and the upper surface of the showerped (as shown in FIG. 1). For example, while the backside of the wafer is being deposited, the gap between the upper side of the wafer and the upper surface of the showerhead is minimized.

[0024] The showped 106 is further configured to include a showerhead hole pattern and an internal plenum for uniform distribution of gas. The showerhead hole pattern and internal plenum, which provide uniform distribution of gas, enable the process gas to be delivered toward the bottom of the wafer in a properly uniform distribution. Embodiments also allow the gas flow pedestal (i.e., showped) to have an active heater to bring the process gas to an appropriate temperature. The combination of the showped 106 and the showerhead 104 enables the simultaneous functioning of both important attributes. In one embodiment, the showped 106 can still heat the wafer and provide wafer transfer features within or outside the reactor chamber, while the components of the showerhead 104 enable the flow of process gas. Thus, the gas flow pedestals (i.e., showped) disclosed herein enable the implementation of conventional PECVD processes that selectively perform deposition on either side of the wafer. These configurations are also configured to selectively supply RF power to the upper or bottom electrode to dynamically enable / deactivate the plasma on the wafer side where deposition is required.

[0025] In a broad sense, showbeds offer several advantages for addressing stress and warpage issues by depositing a film on the back surface of a wafer. The back surface film counteracts the stress from the front surface deposition, resulting in a wafer with neutral stress (or substantially neutral stress, e.g., less than approximately + / - 150 MPa) that exhibits no warpage (or is virtually warp-free, e.g., less than approximately 150 μm). If the film deposited on the front surface is tensile, the back surface film should also be tensile to balance the overall stress. Similarly, if the front surface film is compressible, the back surface film should also be compressible. The back surface film can be deposited by various reaction mechanisms (e.g., chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), low-pressure chemical vapor deposition (LPCVD), etc.). In various cases, plasma-enhanced chemical vapor deposition is used due to the high deposition rates achieved by this type of reaction.

[0026] By adjusting specific deposition parameters, a back layer with a desired stress level can be obtained. One of these deposition parameters is the thickness of the deposited back layer. Thicker layers induce more stress in the wafer, while thinner layers (deposited with the same composition and under the same conditions) induce less stress in the wafer. Therefore, to minimize the amount of material consumed when forming the back layer, this layer can be deposited relatively thinly under conditions that promote the formation of a high-stress layer.

[0027] In some embodiments, a multi-station processing tool may have station-variable support features for back-side deposition. During back-side deposition within a single station, support features may block deposition onto the wafer or other substrate being processed at the contact points of the support features. In one embodiment, a first station may have a first set of support features that contact the wafer or other substrate being processed at a first set of locations, and a second station may have a second set of support features that contact the wafer or other substrate being processed at a second set of locations different from the first set of locations. As a result, areas blocked by the first set of support features during deposition at the first station may be exposed during deposition at the second station. Thus, the back layer can be deposited on all portions of the back surface without full-layer voids. Much of this disclosure refers to the advantages of station-variable support features (also called support features) for back-side deposition, but station-variable support features can also be utilized to provide advantages for other types of back-side processing, such as etching.

[0028] As mentioned above, stacks of deposited materials are particularly likely to cause stress and warping of wafers. One exemplary stack that may cause these problems is one with alternating layers of oxides and nitrides (e.g., silicon oxide / silicon nitride / silicon oxide / silicon nitride). Another exemplary stack that is likely to cause warping is one with alternating layers of oxides and polysilicon (e.g., silicon oxide / polysilicon / silicon oxide / polysilicon). Other examples of stack materials that may cause problems include, but are not limited to, tungsten and titanium nitride. The materials in the stack may be deposited by chemical vapor deposition techniques such as plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), metal-organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), or by direct metal deposition (DMD), etc. These examples are not intended to be limiting. Certain disclosed embodiments may be useful whenever material present on the front of the wafer induces stress and / or warping of the wafer.

[0029] The front stack can be deposited in any number of layers and thickness. In a typical example, the stack consists of approximately 32 to 72 layers and has a total thickness of approximately 2 to 4 μm. The stress induced in the wafer by the stack can be approximately -500 MPa to approximately +500 MPa, resulting in warping often of approximately 200 to 400 μm (for a 300 mm wafer), and sometimes even greater.

[0030] The material deposited on the back surface of the wafer may be a dielectric material in various embodiments. In some cases, oxides and / or nitrides (e.g., silicon oxide / silicon nitride) are used. Examples of silicon-containing reagents that can be used include, but are not limited to, silanes, halosilanes, and aminosilanes. Silanes contain hydrogen and / or carbon groups but do not contain halogens. Examples of silanes are silane (SiH4), disilane (Si2H6), and organosilanes, such as methylsilane, ethylsilane, isopropylsilane, t-butylsilane, dimethylsilane, diethylsilane, di-t-butylsilane, allylsilane, sec-butylsilane, texylsilane, isoamylsilane, t-butyldisilane, and di-t-butyldisilane. Halosilanes contain at least one halogen group and may or may not contain hydrogen and / or carbon groups. Examples of halosilanes include iodosilane, bromosilane, chlorosilane, and fluorosilane. Halosilanes, and especially fluorosilanes, can form reactive halide species that can etch silicon materials, although in the specific embodiments described herein, the silicon-containing reactant is not present when the plasma impacts. Specific chlorosilanes include tetrachlorosilane (SiCl4), trichlorosilane (HSiCl3), dichlorosilane (H2SiCl2), monochlorosilane (ClSiH3), chloroallylsilane, chloromethylsilane, dichloromethylsilane, chlorodimethylsilane, chloroethylsilane, t-butylchlorosilane, di-t-butylchlorosilane, chloroisopropylsilane, chloro-sec-butylsilane, t-butyldimethylchlorosilane, and texyldimethylchlorosilane. Aminosilanes contain at least one nitrogen atom bonded to a silicon atom, but may also contain hydrogen, oxygen, halogens, and carbon.Examples of aminosilanes include mono, di, tri, and tetraaminosilanes (H3Si(NH2)4, H2Si(NH2)2, HSi(NH2)3, and Si(NH2)4, respectively), as well as substituted mono, di, tri, and tetraaminosilanes, such as t-butylaminosilane, methylaminosilane, tert-butylsilaneamine, bis(ter-butylamino)silane (SiH2(NHC(CH3)3)2(BTBAS), tert-butylsilylcarbamate, SiH(CH3)-(N(CH3)2)2, SiHCl-(N Examples include (CH3)2)2 and (Si(CH3)2NH)3. A further example of aminosilane is trisilylamine (N(SiH3)). Other potential silicon-containing reagents include tetraethyl orthosilicate (TEOS), as well as cyclic and acyclic TEOS variants, such as tetramethoxysilane (TMOS), fluorotriethoxysilane (FTES), trimethylsilane (TMS), octamethyltetracyclosiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTSO), and dimethyldimethoxysilane. (DMDS), Hexamethyldisilazane (HMDS), Hexamethyldisiloxane (HMDSO), Hexamethylcyclotrisiloxane (HMCTSO), Dimethyldiethoxysilane (DMDEOS), Methyltrimethoxysilane (MTMOS), Tetramethyldisiloxane (TMDSO), Divinyltetramethyldisiloxane (VSI2), Methyltriethoxysilane (MTEOS), Dimethyltetramethoxydisiloxane (DMTMODSO), Ethyltriethoxysilane (ETEOS), Ethyltrimethoxysilane (ETM Examples include OS, hexamethoxydisilane (HMODS), bis(triethoxysilyl)ethane (BTEOSE), bis(trimethoxysilyl)ethane (BTMOSE), dimethylethoxysilane (DMEOS), tetraethoxydimethyldisiloxane (TEODMDSO), tetrakis(trimethylsiloxy)silane (TTMSOS), tetramethyldiethoxydisiloxane (TMDEODSO), triethoxysilane (TIEOS), trimethoxysilane (TIMEOS), or tetrapropoxysilane (TPOS).

[0031] Examples of nitrogen-containing reagents include, but are not limited to, ammonia, hydrazine, amines (e.g., amines having carbon), such as methylamine, dimethylamine, ethylamine, isopropylamine, t-butylamine, di-t-butylamine, cyclopropylamine, sec-butylamine, cyclobutylamine, isoamylamine, 2-methylbutan-2-amine, trimethylamine, diisopropylamine, diethylisopropylamine, di-t-butylhydrazine, and aromatic-containing amines, such as aniline, pyridine, and benzylamine. The amines may be primary, secondary, tertiary, or quaternary (e.g., tetraalkylammonium compounds). Nitrogen-containing reagents may contain heteroatoms other than nitrogen; for example, hydroxylamine, t-butyloxycarbonylamine, and Nt-butylhydroxylamine are nitrogen-containing reagents.

[0032] Examples of oxygen-containing co-reactants include oxygen, ozone, nitrous oxide, carbon monoxide, nitric oxide, nitrogen dioxide, sulfur oxides, sulfur dioxide, oxygen-containing hydrocarbons (CxHyOz), water, and mixtures thereof.

[0033] The flow rates of these reagents depend heavily on the type of reaction used to deposit the back layer. When CVD / PECVD is used to deposit the back layer, the flow rate of the silicon-containing reagent may be about 0.5–10 mL / min (before atomization), for example, about 0.5–5 mL / min. The flow rates of the nitrogen-containing reagent, oxygen-containing reagent, or other co-reactants may be about 3–25 standard liters (SLM) per minute, for example, about 3–10 SLM.

[0034] In certain embodiments, the back layer can be removed after further processing. In this case, the composition of the back layer should be selected so that it can be easily removed from the substrate at an appropriate time. In this regard, there needs to be high selectivity between the material of the back layer (e.g., dielectric) and the material of the underlying substrate (e.g., silicon) in the desired removal chemical.

[0035] The optimal thickness of the back layer depends on the amount of stress induced by deposition on the front surface of the wafer, as well as the conditions under which the back layer is deposited. The back layer can be deposited to a thickness where the stress on the wafer is negligible (e.g., less than about 150 MPa). In these or other embodiments, the back layer may be deposited to a thickness where the warpage of the wafer is negligible (e.g., less than about 150 μm). In some cases, this corresponds to a back layer thickness of about 0.1–2 μm, e.g., about 0.3–2 μm, or about 0.1–1 μm, or about 0.3–1 μm. When silicon nitride is used to form the back layer, a film with a thickness of about 0.3 μm is sufficient to mitigate warpage of about 50–200 μm. As described above, a back layer with higher stress can be used to reduce the required thickness of the layer. This makes it possible to save material and reduce costs.

[0036] It should be understood that this embodiment can be implemented in numerous ways, such as as a process, apparatus, system, device, or method. Several embodiments are described below.

[0037] In one embodiment, film deposition is carried out using a plasma-enhanced chemical vapor deposition (PECVD) system. PECVD systems can take many different forms. A PECVD system includes one or more chambers or "reactors" (which may include multiple stations) suitable for wafer processing and accommodating one or more wafers. Each chamber can accommodate one or more wafers for processing. One or more chambers maintain the wafers in one or more defined positions (with or without movement within those positions, e.g., rotation, vibration, or other agitation). Wafers being deposited can be transferred from one station to another, which may be in a reactor chamber, during the process. Of course, film deposition can be carried out entirely in a single station, or any portion of the film can be deposited in any number of stations.

[0038] During the process, each wafer is held in place by a pedestal, wafer chuck, and / or other wafer holding device. For certain operations, the device may include a heater, such as a heating plate, for heating the wafer.

[0039] Figure 1 shows a substrate processing system 100 used to process a wafer 128. The system includes a chamber 102. A central column is configured to support a pedestal for when the top surface of the substrate 128 is being processed, for example, when a film is being formed on the top surface. The pedestal according to embodiments disclosed herein is called a showerhead pedestal ("showpet") 106. A showerhead 104 is placed on the showpet 106. In one embodiment, the showerhead 104 is electrically coupled to a power supply 122 via a match network 125. The power supply 122 is controlled by a control module 120, for example, a controller. In other embodiments, it is possible to supply power to the showpet 106 instead of the showerhead 104. The control module 120 is configured to operate the substrate processing system 100 by performing process inputs and controls for a particular recipe. Depending on whether the top surface of the substrate 128 is receiving the deposited film or the bottom surface of the substrate 128 is receiving the deposited film, controlModule 120 sets various operational inputs for the process recipe, such as power level, timing parameters, process gas, mechanical movement of wafer 128, and the height at which wafer 128 is lifted from showpet 106. In embodiments having multiple processing chambers 102 (such as the examples in Figures 2 and 3), system 100 may also include a power supply 122 and related elements such as a match network 125, each of which is coupled to a showerpet 106 and / or showerhead 104 in each of the chambers 102. In other embodiments, a single power supply 122 may be coupled to showerpets 106 and / or showerheads 104 in multiple chambers 102. The control module 120, gas source 114, gas manifold 112, gas manifold 108, gas source 110, match network 125, RF power supply 112, showpet 106, showerhead 104, and one or more processing chambers can form equipment for depositing a film on the back surface of a substrate. As will be described in more detail below, a multi-station processing tool may include two or more processing stations, including the aforementioned equipment for depositing films on the back surface of a substrate. Some of the aforementioned equipment may be shared by multiple processing stations within the multi-station processing tool. In addition, a single wafer may be processed by multiple stations within the multi-station processing tool. Thus, a first processing station within the multi-station processing tool may have a first piece of equipment for depositing a rigid film on the back surface of a substrate, and a second processing station within the multi-station processing tool may have a second piece of equipment for depositing a second film on the back surface of a substrate.

[0040] The central column may also include lift pins controlled by lift pin control. The lift pins raise the wafer 128 from the showbed 106, and the end effector lifts the wafer. EndIt is used to allow the wafer 128 to be lowered after it has been placed on the effector. An end effector (not shown) can also place the wafer 128 on top of a spacer 130. As described below, the spacer 130 is sized to provide controlled separation of the wafer 128 between the top surface of the showerhead 104 (facing the wafer) and the top surface of the showpet 106 (facing the wafer).

[0041] The substrate processing system 100 further includes a gas manifold 108 connected to a gas source 110, for example, a supply of gaseous chemicals and / or an inert gas from the facility. Depending on the processing to be performed across the upper surface of the substrate, the control module 120 controls the supply of gas from the gas source 110 via the gas manifold 108. The selected gas then flows into a showerhead 104 and is distributed into a defined spatial volume between the surfaces of the showerhead 104 facing the wafer 128 when the wafer is placed on the base 140.

[0042] The substrate processing system 100 further includes a gas source 114, for example, a gaseous chemical supply from the facility and / or an inert gas, connected to a gas manifold 112. Depending on the processing to be performed across the bottom surface of the substrate, a control module 120 controls the supply of gas from the gas source 114 via the gas manifold 112. The selected gas then flows into a showerhead 104 and is distributed into a defined spatial volume between the surfaces of the showpet 106 facing the bottom / underside of the wafer 128 when the wafer is placed on the spacer 130. The spacer 130 provides separation that optimizes deposition on the bottom surface of the wafer 128 while reducing deposition across the top surface of the wafer. In one embodiment, while deposition is targeted to the bottom surface of the wafer 128, an inert gas flows across the top surface of the wafer 128 via the showerhead 104, thereby pushing the reactant gas away from the top surface and directing the reactant gas supplied from the showpet 106 towards the bottom surface of the wafer 128. In embodiments having multiple processing chambers 102 (such as the examples in Figures 2 and 3), the system 100 may include a plurality of gas manifolds 112, each of which is coupled to a showpet 106 in each of the chambers 102, and / or a plurality of gas manifolds 108, each of which is coupled to a showerhead 104 in each of the chambers 102.

[0043] Furthermore, the gas may or may not be pre-mixed. Appropriate valve adjustment and mass flow control mechanisms can be used to ensure that the correct gas is supplied during the process deposition and plasma treatment phases. The process gas exits the chamber through an outlet. A vacuum pump (e.g., a single- or two-stage mechanical dry pump and / or turbomolecular pump) draws out the process gas, and a closed-loop controlled flow limiting device, such as a throttle valve or pendulum valve, maintains the reactor at a sufficiently low pressure.

[0044] Also shown is a carrier ring 124 surrounding the outer region of the showbed 106. When the upper surface of the wafer 128 is being processed, for example, when material is being deposited thereon, the carrier ring 124 is configured to seat on a carrier ring support region that is one level lower than the wafer support region at the center of the base showbed 106. The carrier ring 124 includes an outer edge side of its disk structure, for example, an outer radius, and an inner radius closest to the wafer edge side of its disk structure, for example, the location where the wafer 128 is seated. The wafer edge side of the carrier ring 124 includes a plurality of contact support structures configured to support the wafer 128. The spacer 130 may include carrier ring support features that support the carrier ring 124. The spacer 130 may include wafer support features that support the wafer 128 away from the carrier ring 124 when the carrier ring 124 is held by the spacer 130.

[0045] In some embodiments, the chamber 102 may be a processing chamber within a multi-station processing tool, and the wafer support features of the spacer 130 may engage with the wafer at different azimuthal locations on the wafer, depending on which station the wafer is in. For example, the spacer 130 in a first processing station may include wafer support features that support the wafer 128 by engaging with the wafer at a first set of locations (e.g., three or more locations evenly or unevenly arranged around the wafer), and the spacer 130 in a second processing station may include wafer support features that support the wafer 128 by engaging with the wafer at a second set of locations (e.g., three or more locations evenly or unevenly arranged around the wafer). The first and second sets of locations may not overlap or may only partially overlap. In this type of arrangement, back-side deposition in the first station may result in voids in the back-side film applied to the wafer 128 at the first set of locations due to physical occlusion at the first set of locations by the wafer support features of the spacer 130. However, back deposition within the second station can at least partially fill those voids (because the wafer support features within the second station engage with the wafer 128 at positions in the second set that do not overlap, or only partially overlap, with the positions in the first set).

[0046] In some other embodiments, the wafer 128 may rotate as it moves from one station to the next, thereby engaging with the spacer 130 or other wafer support features at different azimuthal positions on the wafer when it is placed at each station. The rotation of the wafer between stations may be sufficient to ensure that the back layer is deposited in the desired manner (e.g., that there are no full-layer voids in the back layer). In such embodiments, the spacer 130 or other wafer support features may be at the same azimuthal position across multiple stations.

[0047] Figure 2 shows a top view of a multi-station processing tool equipped with four processing stations. The embodiment in Figure 1 shows a chamber 102 that can be implemented in the chamber 102 of Figures 2 and 3, which has four chamber stations. Figures 2 and 3 provide top views of the chamber portion (e.g., the upper chamber portion is removed for illustrative purposes) and the four stations are accessed by spider forks 132. Each spider fork 132, or fork, includes first and second arms, each of which is positioned around a portion of each side of the showpet 106. In this figure, the spider forks 132 are shown with dashed lines to indicate that they are located below the carrier ring 124. The spider fork 132 is configured to use an engagement and rotation mechanism 220 to simultaneously raise and support the carrier ring 124 from the station (i.e., from the underside of the carrier ring 124), and then rotate at least one or more stations before lowering the carrier ring 124 (at least one of the carrier rings supporting the wafer 128) to the next location, allowing further plasma processing, treatment, and / or film deposition on each wafer 128. As described above, in one embodiment, the spider fork 132 can be used to lower the wafer 128 onto a wafer support feature such as a spacer 130 (and raise the wafer 128 from the wafer support feature). The spacer 130 can hold the wafer 128 at a height that allows deposition on the back surface of the wafer 128 while substantially preventing deposition on the upper side of the wafer 128, as shown, for example, in Figure 1.

[0048] Figure 3 shows a schematic diagram of one embodiment of a multi-station processing tool having an inbound load lock 148 and an outbound load lock 140. A robot 142 is configured to move a substrate 128 from a cassette loaded via a pod 150 to the inbound load lock 148 via an atmospheric pressure port 144 at atmospheric pressure. The inbound load lock 148 is coupled to a vacuum source (not shown) and can therefore be pumped down when the atmospheric pressure port 144 is closed. The inbound load lock 148 also includes a chamber transport port 146 that is coupled to a processing chamber 102. port When 146 is opened, another robot (not shown) can move the substrate from the inbound load lock 148 to the showbed 106 of the first process station for processing.

[0049] The illustrated processing chamber 102 comprises four process stations numbered 1 to 4 in the embodiment shown in Figure 3. In some embodiments, the processing chamber 102 may be configured to maintain a low-pressure environment so that the substrate can be transported between process stations using a carrier ring 124 without vacuum breakage and / or exposure to air. Each process station illustrated in Figure 3 is a showped 106 configured to supply process gas when back-side deposition is performed. If the wafer is held away from the showped 106 using spacers with wafer support features during back-side deposition, the showerhead 104 may be configured to supply an inert gas over the top surface of the substrate to prevent or reduce deposition on the top surface of the wafer 106.

[0050] Figure 3 also illustrates a spider fork 132 for transporting wafers within the processing chamber 102. As will be described in more detail below, the spider fork 132 can also rotate, enabling the transfer of wafers from one station to another. The transfer is performed by allowing the spider fork 132 to lift the carrier ring 124 from its outer underside, thereby lifting the wafer, and then the wafer and carrier 124 rotate together to the next station. In one configuration, the spider fork 132 is fabricated from a ceramic material to withstand the high levels of heat during processing.

[0051] In other embodiments, instead of using the spider fork 132 to lift and transport wafers, a paddle-type structure can also function to lift and transport wafers. The paddle can be positioned between stations in a similar manner to the way the spider fork 132 is seated, and can function in the same way. Therefore, for ease of understanding, references to the spider fork 132 should also be understood to apply to paddle configurations that can provide controlled lift (e.g., during back-side wafer deposition) and transport between stations. In some cases, a structure configured to lift, support, and / or transport wafers (such as the spider fork 132) may be called an “indexer” or “rotating indexer.” These structures may be part of a rotating carousel for moving wafers between stations. Therefore, for ease of understanding, references to the spider fork 132 should also be understood to refer to an “indexer” or “rotating indexer” even if such a structure differs from a “spider fork” (e.g., having a different structural arrangement, utilizing different techniques for supporting and / or moving wafers, etc.).

[0052] Broadly speaking, the embodiments disclosed herein relate to systems for dynamically controlling the deposition of PECVD films on selective sides (front and / or back) of a wafer. One embodiment includes a dual gas-flow electrode for defining a capacitively coupled PECVD system. The system includes a gas-flow showerhead 104 and a showped 106. In one embodiment, the gas-flow pedestal (i.e., the showped) is a combination of the showerhead and the pedestal, enabling deposition on the back surface of the wafer. The geometric shape of the electrode combines showerhead features such as a gas-mixing plenum, holes, hole patterns, and gas-jet prevention baffles, with pedestal features such as an embedded control heater, a wafer lift mechanism (also called a wafer support feature and wafer support structure), the ability to hold a plasma suppression ring, and mobility. This allows for wafer transfer and gas handling with or without RF power from the pedestal.

[0053] In one embodiment, the system has wafer support features that include station variable support features. For example, the system may have spacers with station variable support features, such as spacer 130 in Figure 1. In one embodiment, the wafer support features of the first process station engage with the underside of the wafer, also called the backside, at a first plurality of locations (e.g., three or more) along the periphery of the wafer. As a result, the wafer support features of the first process station can physically seal the underside of the wafer and thus prevent backside deposition at the first plurality of locations. If backside deposition at this first station was the only backside deposition performed, the wafer would have full-layer voids in the backside film at the first plurality of locations (e.g., where the wafer support features engage with and hold the wafer). Therefore, in at least some embodiments, the wafer support features of the second process station are configured to engage with the underside of the wafer at a second plurality of locations along the periphery of the wafer. The second plurality of locations do not overlap with the first plurality of locations, or only partially overlap. Therefore, when back-side deposition is performed at the second process station, areas with full-layer voids (e.g., regions blocked by wafer support features at the first process station) can be at least partially filled with the deposited back-side layer. As a result, the multi-station processing system can deposit a back-side film free of full-layer voids.

[0054] If desired, a multi-station processing system may have any number of processing stations (e.g., two, three, four, five, or more). In such embodiments, each processing station may have wafer support features that engage with the wafer at a set of locations on the underside of the wafer specific to that particular processing station. Alternatively, two or more processing stations may have wafer support features that engage with the wafer at a common set of locations, and one or more other processing stations may have wafer support features that engage with the wafer at different sets of locations. In general, increasing the number of processing stations with different engagement locations can help reduce variations in backface deposition.

[0055] In one embodiment, the system has a wafer lift mechanism that allows for precise control of the parallelism of the substrate to the electrodes. In one embodiment, this is achieved by setting the lift mechanism parallel to the two electrodes and controlling manufacturing tolerances, such as the spindle or lift pin mechanism. Another embodiment is defined by raising the wafer lift component, but this option does not allow for dynamic control of the side receiving deposition.

[0056] In one configuration, the lift mechanism dynamically controls the distance during the process (before, during, and after plasma), allowing control over the deposition side, deposition profile, and properties of the deposited film. The system further allows for selective activation / deactivation of the side over which the reactant flows. Deposition and plasma can be suppressed by allowing the reactant to flow on one side and an inert gas on the other.

[0057] In one embodiment, the gap between wafer sides that do not require plasma or film deposition can be tightly controlled to suppress plasma (e.g., to reduce or eliminate plasma damage). In one example, the system allows a minimum gap of about 2 mm to about 0.5 mm, and in another embodiment, about 1 mm to about 0.05 mm (limited by wafer warpage), and such a gap can be controlled. In one embodiment, this gap depends on the process conditions.

[0058] In one embodiment, the gas flow platform (i.e., showped) enables, but is not limited to: (a) thermal stabilization of the wafer against the processing temperature before processing; (b) selective design of hole patterns on the showped for selective deposition of films on different regions of the back surface of the wafer; (c) mounting of interchangeable rings to achieve appropriate plasma confinement, hole patterns, and edge impedance (which may help achieve desired radial distribution of film properties); (d) stable wafer transfer mechanisms within the chamber, such as lift pins, RF coupling features, and minimum contact arrays, and mechanisms for transferring the wafer to another external chamber or cassette; (e) implementation of gas mixing feet, such as internal plenums, baffles, and manifold line openings; and (f) adding compartments to the gas flow platform (i.e., showped) to enable selective gas flow to different regions of the back surface of the wafer and control the flow rate via a flow controller and / or multiple plenums.

[0059] In another embodiment, dynamic gap control using a wafer lift mechanism enables: (a) controlling the distance from the deposition or reactant flow electrode to the side or middle of the wafer where deposition is required, thereby enabling deposition on both sides; and (b) a lift mechanism that dynamically controls the distance during the process (pre-plasma, during plasma, post-plasma) to control the side of the deposition, the deposition profile, and the properties of the deposited film. In another embodiment, for a deposition mode used to perform deposition on the back surface of a wafer, film edge exclusion control is highly desirable to avoid lithography-related overlay problems. The lift mechanism used in this system is performed via a carrier ring 124 having design features that cover the deposition on the edge. This specifies edge exclusion control through the design and geometry of the carrier ring.

[0060] Figures 4A, 4B, and 4C show a bottom perspective view, bottom view, and side view, respectively, of the wafer carrier ring 400 and the station variable support features 402a and 402b. As shown in Figure 4A, the first processing station may have an element 401a having a first support feature 402a. Figure 4A also shows how the second processing station may have an element 401b having a second support feature 402b. Elements 401a and 402b may be embodiments of the spacer 130 in Figure 1. Elements 401a and 401b, and their associated support features 402a and 402b, may be part of different processing stations in a multi-station processing tool, such as the tool in Figures 2 and 3 (for example, feature 402a may be present in the first station and feature 402b may be present in the second station). In some embodiments, each processing station may have three or more support features to provide stability. In addition, any number of support features (all or just one, two, three, or four, etc.) may be station-variable (for example, engaging with the underside of the wafer at different locations depending on which station the wafer is in).

[0061] Figures 4A, 4B, and 4C also show that in some embodiments, the wafer carrier ring 400 includes a plurality of wafer holding features 406 that support a wafer or other substrate. When the wafer carrier ring 400 is lifted (for example, for movement between stations or for processing operations), the wafer holding features 406 can engage with the underside of the wafer. The wafer holding features 406 can be arranged along the inner circumference of the wafer carrier ring 400 in a sufficient number and at appropriate intervals to stably hold the wafer. In particular, there may be at least three wafer holding features 406 spaced sufficiently apart to maintain wafer stability. In other embodiments, the inner circumference on the upper side of the wafer carrier ring 400 can function as wafer holding features (the features 406 may be optionally omitted).

[0062] As part of back-side deposition, the wafer carrier ring 400 can transport the wafer to a first processing station in a multi-station processing system. The wafer carrier ring 400 may be carried within the system by a spider fork 132, a paddle, or the like. The wafer carrier ring 400 can then be lowered within the first station (for example, by lowering the spider fork) until the wafer is placed on a first set of wafer support features including feature 402a. The back-side deposition process can then be carried out within the first processing station. Subsequently, the wafer carrier ring 400 and the wafer can be lifted and transported to a second processing station, where they can be lowered within the second station until the wafer is placed on a second set of wafer support features including feature 402b. In such embodiments, the carrier ring 400 moves from station to station with the wafer, and certain portions of station-specific support features, such as support features 402a and 402b, move away from the carrier ring and into contact with the wafer.

[0063] As shown in Figures 4A, 4B, and 4C, a support feature, such as feature 402a of the first processing station, can be configured to hold the wafer at the position of the first set (which may be immediately to the left of the wafer holding feature 406 of the wafer carrier ring 400, as is the case with feature 402a). In contrast, a support feature, such as feature 402b of the second processing station, can be configured to hold the wafer at the position of the second set (which may be immediately to the right of the wafer holding feature 406, as is the case with feature 402b). This arrangement may block backfill deposition in the first processing station at the position of the first set, and backfill deposition in the second processing station at the position of the second set. However, since the positions of the first and second sets do not overlap, backfill deposition in the second processing station can at least partially fill the void left by the blocking of support features such as feature 402a. Similarly, if back-side deposition is performed at the first station after back-side deposition at the second station, the back-side deposition in the first station can at least partially fill the voids left by the occlusion of supporting features such as feature 402b. These types of arrangements allow for the formation of a full-layer void-free back-side film. An example of these advantages is shown in Figure 6.

[0064] Figure 6 includes bottom images 600–604 of wafers processed at two stations of a multi-station processing tool. While Figure 6 is equally applicable to deposition, etching, and other fabrication processes, the following description will focus on deposition for clarity and convenience.

[0065] Figure 600 shows a wafer 610 supported by three or more support features 402a of the first processing station in a multi-station processing tool. Figure 600 shows the wafer 610 before the first film deposition at the first processing station.

[0066] Image 601 shows wafer 610 after the initial film deposition at the first processing station. The initial film deposition is indicated by relatively faint shading or stippling of wafer 610 compared to Image 603.

[0067] Figure 602 shows wafer 610 after it has been transferred to a second processing station in a multi-station processing tool. Figure 602 shows wafer 610 before further film deposition at the second processing station. At the second processing station, wafer 610 is supported by three or more support features 402b that engage with wafer 610 at locations different from support features 402a. Thus, when wafer 610 is at the second processing station, the portion 612 of wafer 610 that was previously in contact with support features 402a is exposed and uncovered. As seen in Figure 602, the film deposited between Figures 600 and 601 was not deposited on portion 612 of wafer 610 here because support features 402 blocked deposition on portion 612.

[0068] Image 603 shows wafer 610 after further film deposition at the second processing station. Further film deposition is indicated by relatively darker shading or stippling of wafer 610 compared to Image 601. As shown in Image 603, at least some thickness of film is deposited on portion 612, which was previously obscured by supporting features 402a. As indicated by the relatively light shading or stippling of portion 612 in Image 603, the amount of film deposited on portion 612 (e.g., thickness) may be slightly less than the average amount of film deposited on the entire wafer 610 (e.g., thickness).

[0069] Figure 604 shows the wafer 610 after further film deposition at the second processing station, with the support feature 401b and other components removed for clarity. As shown in Figure 604, the amount of film deposited on portions 612 and 614 is relatively small (e.g., thinner) than the amount deposited on the entire rest of the wafer 610. Thus, Figures 600–604 demonstrate how station variable support features can avoid full-layer voids during the deposition process. It should be noted that similar results can be achieved in etching and other fabrication operations. As an example, when the techniques disclosed herein are applied in an etching scenario, station variable support features can prevent any area from being completely etched. Figures 600–604 also show how the support feature 402a of the first processing station supports the wafer 610 at the first set of positions, how the support feature 402a of the second processing station supports the wafer at the second set of positions, and how the positions of the first and second sets do not overlap.

[0070] Figure 5 shows a control module 500 for controlling the system described above. In one embodiment, Figure 5 Control module 500This may include some exemplary components. For example, the control module 500 may include a processor, memory, and one or more interfaces. The control module 500 may be used to control devices in the system based in part on sensed values. As just one example, the control module 500 may control one or more of the valve 502, filter heater 504, pump 506, and other devices 508 based on sensed values ​​and other control parameters. The control module 500 may, as just one example, receive sensed values ​​from a pressure gauge 510, a flow meter 512, a temperature sensor 514, and / or other sensors 516. The control module 500 can also be used to control process conditions during precursor feeding and film deposition. The control module 500 typically includes one or more memory devices and one or more processors.

[0071] The control module 500 can control the activity of the precursor feeding system and the deposition apparatus. The control module 500 executes a computer program that includes a set of instructions for controlling process timing, feeding system temperature, pressure difference across filters, valve position, gas mixing, chamber pressure, chamber temperature, wafer temperature, RF power level, wafer chuck or pedestal position, and other parameters of a particular process. The control module 500 can also monitor the pressure difference and automatically switch the feeding of the vapor precursor from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 500 can be used.

[0072] Typically, a user interface is associated with the control module 500. The user interface may include a display 518 (e.g., a display screen and / or graphical software display of the device and / or process conditions) and user input devices 520 such as a pointing device, keyboard, touchscreen, or microphone.

[0073] Computer programs for controlling the feeding, deposition, and other processes of precursors in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, etc.). The compiled object code or script is executed by the processor to perform the tasks identified by the program.

[0074] The control module parameters relate to process conditions such as, for example, the filter pressure difference, process gas composition and flow rate, plasma conditions such as temperature, pressure, RF power level and low-frequency RF frequency, cooling gas pressure, and chamber wall temperature.

[0075] System software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform the deposition process of the present invention. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0076] The substrate positioning program may include program code for controlling chamber components used to load the substrate onto a pedestal or chuck and to control the distance between the substrate and other parts of the chamber, such as the gas inlet and / or target. The process gas control program may include code for controlling the gas composition and flow rate to stabilize the pressure in the chamber, and optionally, code for flowing gas into the chamber before deposition. The filter monitoring program may include code for comparing the measured difference to a predetermined value and / or for switching paths. The pressure control program may include code for controlling the pressure in the chamber, for example, by adjusting the throttle valve of the chamber's exhaust system. The heater control program may include code for controlling the current to heating units for heating components of the precursor feeding system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a heat transfer gas (such as helium) to the wafer chuck.

[0077] Examples of sensors that can be monitored during deposition include, but are not limited to, a mass flow control module, pressure sensors such as a pressure manometer 510, and thermocouples located in the feeding system, base, or chuck (e.g., temperature sensor 514). Appropriately programmed feedback and control algorithms can be used in conjunction with data from these sensors to maintain desired process conditions. The above describes the implementation of embodiments of the present invention in single or multi-chamber semiconductor processing tools.

[0078] In some embodiments, the plasma can be monitored in situ by one or more plasma monitors. In one scenario, plasma power may be monitored by one or more voltage, current sensors (e.g., VI probes). In another scenario, plasma density and / or process gas concentration may be measured by one or more emission spectroscopic sensors (OES). In some embodiments, one or more plasma parameters can be programmed to adjust based on measurements from such in situ plasma monitors. For example, OES sensors may be used in a feedback loop to provide programmed control of plasma power. In some embodiments, it will be understood that other monitors may be used to monitor the plasma and other process characteristics. Such monitors may include, but are not limited to, infrared (IR) monitors, acoustic monitors, and pressure transducers.

[0079] Any suitable chamber can be used to carry out the disclosed embodiments. Exemplary deposition systems include, but are not limited to, equipment from the ALTUS®, VECTOR®, and / or SPEED® product families, each available from Lam Research, Inc., Fremont, California, or any of the various other commercially available processing systems. Two or more stations may perform the same function. Similarly, two or more stations may perform different functions. Each station can be designed / configured to perform a desired specific function / method.

[0080] System control logic can be configured in any suitable way. Generally, logic can be designed or configured in hardware and / or software. Instructions for controlling drive circuits may be hardcoded or provided as software. Instructions may also be provided by “programming.” Such programming is understood to include all forms of logic, including hardcoded logic of digital signal processors, application-specific integrated circuits, and other devices with specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that can be executed on a general-purpose processor. System control software can be coded in any suitable computer-readable programming language.

[0081] Computer program code for controlling processes in a process sequence can be written in any conventional computer-readable programming language (e.g., assembly language, C, C++, Pascal, Fortran, etc.). The compiled object code or script is executed by the processor to perform the tasks identified by the program. Also, as shown, the program code may be hardcoded.

[0082] Controller parameters relate to process conditions such as process gas composition and flow rate, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe and can be entered using the user interface. Signals for monitoring the process may be provided by analog and / or digital input connections of the system controller. Signals for controlling the process are output by analog and digital output connections of the deposition apparatus.

[0083] System software can be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of chamber components necessary to perform the deposition process (and possibly other processes) according to the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.

[0084] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may include semiconductor processing equipment comprising one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer pedestal, gas flow system, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes may include supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generators in some systems, setting RF matching circuits, setting frequency, setting flow rates, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools, and loading and unloading wafers to and from other transfer tools and / or load locks connected to or interlocked with a particular system.

[0085] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0086] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools to which the controller is configured to interact or control. Therefore, as described above, the controller may be distributed, for example, by comprising one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0087] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0088] In this application, the terms “semiconductor wafer,” “wafer,” “substrate,” “wafer substrate,” and “partially fabricated integrated circuit” are used interchangeably. Those skilled in the art will understand that the term “partially fabricated integrated circuit” can refer to a silicon wafer at any of the many stages of integrated circuit fabrication. Wafers or substrates used in the semiconductor device industry typically have a diameter of 200 mm or 300 mm, although the industry is moving towards the adoption of 450 mm diameter substrates. In this description, the terms “front” and “back” are used to describe the different sides of the wafer substrate. The front is understood to be where most of the deposition and processing takes place and where the semiconductor device itself is fabricated. The back is the opposite side of the wafer and typically receives minimal or no processing during fabrication.

[0089] The flow rates and power levels provided herein are suitable for processing on 300 mm substrates unless otherwise specified. Those skilled in the art will understand that these flow rates and power levels can be adjusted as needed for substrates of other sizes. The following detailed description assumes that the invention is carried out on a wafer. However, the invention is not limited thereto. Workpieces may be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces on which the invention can be utilized include various articles such as printed circuit boards.

[0090] The apparatus / processes described herein may be used in conjunction with lithography patterning tools or processes for, for example, the fabrication or manufacture of semiconductor devices, displays, LEDs, solar panels, etc. Typically, although not essential, such tools / processes are used or performed together in a common fabrication facility. Lithography patterning of films typically includes some or all of the following operations, each operation made possible by many available tools: (1) applying photoresist to a workpiece (i.e., substrate) using a spin-on or spray-on tool; (2) curing the photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist with visible light, UV light, or X-ray light using a tool such as a wafer stepper; (4) developing and selectively removing the resist using a tool such as a wet bench, thereby patterning the resist; (5) transferring the resist pattern to an underlying film or workpiece by using a dry etching tool or plasma-assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.

[0091] conclusion While the embodiments described above have been described in some detail for clear understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many other ways of carrying out the processes, systems, and apparatus of these embodiments. Therefore, these embodiments should be considered illustrative rather than restrictive, and their embodiments should not be limited to the details described herein. The present invention can also be realized in the following embodiments, for example. Application Example 1: A multi-station plasma processing system, A first processing station comprising a first set of support features configured to support a substrate at a first set of positions on the back surface of the substrate when the substrate is processed at the first processing station, A second processing station comprising a second set of support features configured to hold the substrate at a second set of positions on the back surface of the substrate when the substrate is processed at the second processing station. Equipped with, The position of the first set does not overlap with the position of the second set. Multi-station plasma processing system. Application example 2: A multi-station plasma processing system according to claim 1, A multi-station plasma processing system comprising: the first processing station further comprising a first shower base; and the second processing station further comprising a second shower base. Application Example 3: A multi-station plasma processing system according to claim 2, A multi-station plasma processing system, wherein the support features of the first set comprises a first spacer configured to support the substrate in a first spaced-out relationship with the first shower base, and the support features of the second set comprises a second spacer configured to support the substrate in a second spaced-out relationship with the second shower base. Application Example 4: A multi-station plasma processing system according to claim 2, A multi-station plasma processing system comprising: a first processing station coupled to a first shower base and further comprising a first gas manifold that provides a first gas from a first gas source when the substrate is processed at the first processing station; and a second processing station coupled to a second shower base and further comprising a second gas manifold that provides a second gas from a second gas source when the substrate is processed at the second processing station. Application Example 5: A multi-station plasma processing system according to claim 2, A multi-station plasma processing system further comprising at least one radio frequency (RF) power supply configured to supply power to the first shower base while the substrate is supported by the first set of support features and to generate plasma for depositing a first film on the back surface, wherein the at least one RF power supply is configured to supply power to the second shower base while the substrate is supported by the second set of support features and to generate additional plasma for depositing a second film on the back surface of the substrate. Application example 6: A multi-station plasma processing system according to claim 5, A multi-station plasma processing system in which the position of the first set does not overlap with the position of the second set, thereby depositing at least one of the first and second films over the entire back surface of the substrate. Application example 7: A multi-station plasma processing system according to any one of claims 1 to 6, A multi-station plasma processing system in which the first set of support features and the second set of support features each comprise at least three support features spaced sufficiently apart to stably support the substrate. Application Example 8: A multi-station plasma processing system according to any one of claims 1 to 6, At least one rotary indexer, the rotary indexer is configured to transfer the substrate from the first processing station to the second processing station. A multi-station plasma processing system that also features [additional features]. Application example 9: A multi-station plasma processing system according to any one of claims 1 to 6, At least one rotary indexer, the rotary indexer is configured to lift the carrier ring so that the carrier ring engages with the support features of the first set and lifts the substrate away from the support features of the first set, to transport the carrier ring and the substrate from the first processing station to the second processing station, and to lower the carrier ring so that the substrate is placed on the support features of the second set and the carrier ring is disengaged from the substrate. A multi-station plasma processing system that also features [additional features]. Application Example 10: A multi-station plasma processing system for processing substrates having a nominal diameter D, A first processing station having a first set of support features, A second processing station having a second set of support features, An indexer configured to rotate about a central axis, thereby transferring the substrate from the first processing station to the second processing station, Equipped with, The support feature of the first set has a first diameter D and a contact surface of the first set positioned within a first circular region centered on the first central point of the first processing station. The support feature of the second set has a second diameter D and a contact surface of the second set positioned within a second circular region centered on the second central point of the second processing station. The rotational transformation of the contact surfaces of the first center point and the first set around the central axis such that the rotated first center point aligns with the second center point does not result in any overlap between the contact surfaces of the second set and the rotated first set when viewed along the central axis. Multi-station plasma processing system. Application Example 11: A multi-station plasma processing system according to claim 10, A multi-station plasma processing system comprising: the first processing station further comprising a first shower base; and the second processing station further comprising a second shower base. Application Example 12: A multi-station plasma processing system according to claim 11, A multi-station plasma processing system, wherein the support features of the first set comprises a first spacer configured to support the substrate in a first spaced-out relationship with the first shower base, and the support features of the second set comprises a second spacer configured to support the substrate in a second spaced-out relationship with the second shower base. Application Example 13: A multi-station plasma processing system according to any one of claims 10 to 12, A multi-station plasma processing system in which the first set of support features and the second set of support features each comprise at least three support features spaced sufficiently apart to stably support the substrate. Application Example 14: A multi-station plasma processing system according to any one of claims 10 to 12, A multi-station plasma processing system comprising: a first processing station comprising a first device for depositing a first film on the back surface of the substrate; and a second processing station comprising a second device for depositing a second film on the back surface of the substrate. Application Example 15: A multi-station plasma processing system according to claim 14, A multi-station plasma processing system wherein the contact surface of the first set is configured to contact the back surface of the substrate at the back surface position of the first set, the contact surface of the second set is configured to contact the back surface of the substrate at the back surface position of the second set, the support features of the first set block the deposition of the first film at the back surface position of the first set, and the support features of the second set allow the deposition of the second film at the back surface position of the first set. Application Example 16: A multi-station plasma processing system according to claim 15, A multi-station plasma processing system in which the support features of the first set enable the deposition of the first film at the back surface location of the second set, and the support features of the second set block the deposition of the second film at the back surface location of the second set. Application Example 17: A method for processing the back surface of a substrate in a multi-station plasma processing system, wherein the multi-station plasma processing system includes a first station having a first set of support features, and the multi-station plasma processing system includes a second station having a second set of support features, and the method is Moving the substrate onto the support feature of the first set, Processing the back surface of the substrate while the substrate is on the first set of support features, wherein the first set of support features blocks the processing of the back surface of the substrate at the location of the first set on the back surface of the substrate, Moving the substrate onto the support feature of the second set, Processing the back surface of the substrate while the substrate is on the support features of the second set, wherein the support features of the second set do not block the processing of the back surface of the substrate at the locations of the first set on the back surface of the substrate. Methods that include... Application Example 18: The method according to claim 17, A method such that the location of the first set does not overlap with the location of the second set. Application Example 19: A method according to either claim 17 or 18, A method wherein the second set of support features blocks processing of the back surface of the substrate at the locations of the second set on the back surface of the substrate. Application Example 20: The method according to claim 19, A method wherein the support features of the first set do not block the processing of the back surface of the substrate at the locations of the second set on the back surface of the substrate. Application Example 21: A method according to either claim 17 or 18, The multi-station plasma processing system further includes an indexer, and the method for moving the substrate onto the support features of the second set includes rotating the indexer about a central axis to move the substrate from the first station to the second station.

Claims

1. A multi-station plasma processing system, A first processing station comprising a first set of support features configured to support a substrate at a first set of positions on the back surface of the substrate when the substrate is processed at the first processing station, A second processing station comprising a second set of support features configured to hold the substrate at a second set of positions on the back surface of the substrate when the substrate is processed at the second processing station. Equipped with, The position of the first set does not overlap with the position of the second set, at least partially. Multi-station plasma processing system.

2. A multi-station plasma processing system according to claim 1, A multi-station plasma processing system comprising: the first processing station further comprising a first shower base; and the second processing station further comprising a second shower base.

3. A multi-station plasma processing system according to claim 2, A multi-station plasma processing system, wherein the support features of the first set comprises a first spacer configured to support the substrate in a first spaced-out relationship with the first shower base, and the support features of the second set comprises a second spacer configured to support the substrate in a second spaced-out relationship with the second shower base.

4. A multi-station plasma processing system according to claim 2, A multi-station plasma processing system comprising: a first processing station coupled to a first shower base and further comprising a first gas manifold that provides a first gas from a first gas source when the substrate is processed at the first processing station; and a second processing station coupled to a second shower base and further comprising a second gas manifold that provides a second gas from a second gas source when the substrate is processed at the second processing station.

5. A multi-station plasma processing system according to claim 2, A multi-station plasma processing system further comprising at least one radio frequency (RF) power supply configured to supply power to the first shower base while the substrate is supported by the first set of support features and to generate plasma for depositing a first film on the back surface, wherein the at least one RF power supply is configured to supply power to the second shower base while the substrate is supported by the second set of support features and to generate additional plasma for depositing a second film on the back surface of the substrate.

6. A multi-station plasma processing system according to any one of claims 1 to 5, A multi-station plasma processing system in which the first set of support features and the second set of support features each comprise at least three support features sufficiently spaced apart to stably support the substrate.

7. A multi-station plasma processing system according to any one of claims 1 to 5, At least one rotary indexer, the rotary indexer is configured to transfer the substrate from the first processing station to the second processing station. A multi-station plasma processing system that also features [additional features].

8. A multi-station plasma processing system according to any one of claims 1 to 5, At least one rotary indexer, the rotary indexer is configured to lift the carrier ring so that the carrier ring engages with the support features of the first set and lifts the substrate away from the support features of the first set, to transport the carrier ring and the substrate from the first processing station to the second processing station, and to lower the carrier ring so that the substrate is placed on the support features of the second set and the carrier ring is disengaged from the substrate. A multi-station plasma processing system that also features [additional features].

9. A multi-station plasma processing system, A first processing station comprising a first set of support features configured to support a substrate at a first set of positions on the back surface of the substrate when the substrate is processed at the first processing station, A second processing station comprising a second set of support features configured to hold the substrate at a second set of positions on the back surface of the substrate when the substrate is processed at the second processing station, At least one rotary indexer, the rotary indexer is configured to transfer the substrate from the first processing station to the second processing station, Equipped with, A multi-station plasma processing system wherein the at least one rotary indexer is configured to rotate the substrates before transferring them to a second processing station such that the position of the second set is different from the position of the first set.

10. A multi-station plasma processing system according to any one of claims 1 to 6, A multi-station plasma processing system in which the substrate is processed using a deposition process in the first processing station and the second processing station.

11. A multi-station plasma processing system according to any one of claims 1 to 6, A multi-station plasma processing system in which the substrate is processed using an etching process in the first processing station and the second processing station.

12. A plasma processing system, The substrate comprises a first set of support features configured to support the substrate at a first set of positions on the back surface of the substrate, The support features of the first set block either 1) film deposition at the location of the first set, and 2) film etching at the location of the first set. A plasma processing system wherein the support features of the first set enable either 1) film deposition and 2) film etching at the locations of the second set, which do not at least partially overlap with the locations of the first set, and the film at the locations of the second set is non-uniform with respect to the rest of the back surface of the substrate.

13. A plasma processing system according to claim 12, A plasma processing system in which the support features of the first set are associated with a first station of a multi-station processing chamber, and the position of the second set is associated with the support features of the second set which are associated with a second station of the multi-station processing chamber.

14. A plasma processing system according to claim 13, A plasma processing system in which the support features of the first set are azimuthally arranged within the first station at positions azimuthally different from the support features of the second set within the second station.

15. A plasma processing system according to claim 12, The first set of support features comprises a plasma processing system having at least three support features.

16. A plasma processing system according to claim 12, A plasma processing system in which the support features of the first set are arranged on a corresponding first set of spacers configured to support the substrate in a first spaced-out relationship from the first shower base.

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