Electrostatic chucks, substrate support assemblies, and plasma processing apparatuses

Abstract

To provide a technique that can promote heat conduction between a substrate and an electrostatic chuck.SOLUTION: An electrostatic chuck is used in a plasma processing device. The electrostatic chuck includes a dielectric portion, a first electrode, and a second electrode. The dielectric portion includes a base and a plurality of convex portions. The base includes an upper surface. The plurality of convex portions protrude relative to the upper surface of the base. Each of the plurality of convex portions includes a support surface that supports a substrate placed thereon. The dielectric portion provides a gas flow path. The gas flow path is connected to a heat transfer space. The heat transfer space is provided above the upper surface by the upper surface and the plurality of convex portions. The first electrode is provided within each of the plurality of convex portions. The second electrode is provided below the upper surface and within the base.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to an electrostatic chuck, a substrate support assembly, and a plasma processing apparatus.

Background Art

[0002] In plasma processing of a substrate, a plasma processing apparatus is used. The plasma processing apparatus described in Patent Document 1 below includes a substrate support assembly. The substrate support assembly is provided in a chamber. The substrate support assembly has a base and an electrostatic chuck. The electrostatic chuck is provided on the base. The base and the electrostatic chuck are joined by brazing.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of promoting heat conduction between a substrate and an electrostatic chuck.

Means for Solving the Problems

[0005] In one exemplary embodiment, an electrostatic chuck is provided. The electrostatic chuck is used in a plasma processing apparatus. The electrostatic chuck comprises a dielectric portion, a first electrode, and a second electrode. The dielectric portion includes a base and a plurality of protrusions. The base includes an upper surface. The plurality of protrusions project from the upper surface of the base. Each of the plurality of protrusions provides a support surface for a substrate placed thereon. The dielectric portion provides a gas channel. The gas channel is connected to a heat transfer space. The heat transfer space is provided above the upper surface by the upper surface and the plurality of protrusions. The first electrode is located in each of the plurality of protrusions. The second electrode is located below the upper surface and in the base. [Effects of the Invention]

[0006] According to one exemplary embodiment, a technique is provided that can promote heat conduction between a substrate and an electrostatic chuck. [Brief explanation of the drawing]

[0007] [Figure 1] This is a diagram illustrating an example configuration of a plasma processing system according to one exemplary embodiment. [Figure 2] This figure illustrates an example configuration of a capacitively coupled plasma processing apparatus according to one exemplary embodiment. [Figure 3] This is a cross-sectional view showing a substrate support assembly according to one exemplary embodiment. [Figure 4] This is a partially enlarged cross-sectional view showing an electrostatic chuck according to one exemplary embodiment. [Figure 5] This is a cross-sectional view showing a substrate support assembly according to another exemplary embodiment. [Modes for carrying out the invention]

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] Figure 1 is a diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support assembly 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon-wave excited plasma (HWP), or a surface wave plasma (SWP), etc. Various types of plasma generation units, including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0012] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support assembly 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support assembly 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support assembly 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support assembly 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support assembly 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is placed on the central region 111a of the main body 111, and the ring assembly 112 is placed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 6 and an electrostatic chuck 5. The base 6 includes a conductive member. The conductive member of the base 6 can function as a lower electrode. The electrostatic chuck 5 is placed on the base 6. The electrostatic chuck 5 includes a dielectric portion 50 and an electrostatic electrode 1111b placed within the dielectric portion 50. The dielectric portion 50 has a central region 111a. In one embodiment, the dielectric portion 50 also has an annular region 111b. Other members surrounding the electrostatic chuck 5, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 5 and the annular insulating member. Furthermore, at least one RF / DC electrode, which will be coupled to an RF power supply 31 and / or DC power supply 32 (described later), may be placed within the dielectric portion 50. In this case, at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal described later are supplied to at least one RF / DC electrode, the RF / DC electrode is also called the bias electrode. The conductive member of the base 6 and at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support assembly 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] Further, the substrate support assembly 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 5, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 6a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 6a. In one embodiment, the flow path 6a is formed in the base 6, and one or more heaters are disposed in the dielectric portion 50 of the electrostatic chuck 5. Further, the substrate support assembly 11 may include a gas flow path 50b configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0018] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes at least one upper electrode. The gas introduction part may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include at least one flow modulation device configured to modulate or pulse the flow rate of at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated in the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. One or more generated bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or a combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] Hereinafter, a substrate support assembly according to one exemplary embodiment will be described with reference to Figure 3. Figure 3 is a cross-sectional view showing a substrate support assembly according to one exemplary embodiment. The substrate support assembly 11 shown in Figure 3 may be used as a substrate support assembly for a plasma processing apparatus 1 and comprises an electrostatic chuck 5, a base 6, and a bonding layer 7. The electrostatic chuck 5 may be used as an electrostatic chuck for the plasma processing apparatus 1. In one embodiment, the plasma processing apparatus 1 further comprises a heat transfer gas supply unit 8.

[0027] The electrostatic chuck 5 comprises a dielectric portion 50, an electrode 5a (first electrode), and an electrode 5b (second electrode). Electrodes 5a and 5b constitute an electrostatic electrode 1111b. As shown in Figure 3, in one embodiment, the dielectric portion 50 comprises a plurality of electrodes 5a and 5b. The plurality of electrodes 5a and 5b constitute an electrostatic electrode 1111b. The plurality of electrodes 5a and 5b are provided within the dielectric portion 50. The dielectric portion 50 is formed from a dielectric material. The dielectric material is, for example, alumina.

[0028] The bonding layer 7 is provided between the electrostatic chuck 5 and the base 6. The bonding layer 7 joins the electrostatic chuck 5 and the base 6 to each other. In one embodiment, the bonding layer 7 is formed from a metal brazing material. The metal brazing material is, for example, aluminum brazing material or silver brazing material. The electrostatic chuck 5 and the base 6 are joined by brazing. In one embodiment, the bonding layer 7 may be formed from an adhesive. The adhesive is, for example, an epoxy adhesive. The electrostatic chuck 5 and the base 6 may be joined by adhesive.

[0029] The dielectric portion 50 has a substantially disc shape. The dielectric portion 50 includes a base portion 51 and a plurality of protrusions 52. The base portion 51 is the lower part of the dielectric portion 50. The base portion 51 is joined to the base 6. The base portion 51 includes an upper surface 51a. Each of the plurality of protrusions 52 projects outward from the upper surface 51a. The substrate W is placed on the plurality of protrusions 52. Each of the plurality of protrusions 52 includes a support surface 52a and a side surface 52b. The support surface 52a is the upper surface of each of the plurality of protrusions 52. The support surface 52a supports the substrate W. The side surface 52b extends from the outer edge of the support surface 52a to the upper surface 51a. The distance between the support surface 52a and the upper surface 51a in the vertical direction is, for example, 0.1 mm or more and 1.0 mm or less. This distance is, as an example, 0.5 mm.

[0030] At least one heat transfer space 50a is provided between the substrate W and the dielectric portion 50. In one embodiment, one heat transfer space 50a is provided between the substrate W and the dielectric portion 50. It is provided above the upper surface 51a by the upper surface 51a and a plurality of protrusions 52. The heat transfer space 50a is provided by the lower surface, upper surface 51a and side surface 52b of the substrate W. The dielectric portion 50 provides a gas flow path 50b. The gas flow path 50b is connected to the heat transfer space 50a. The gas flow path 50b connects the heat transfer space 50a to the heat transfer gas supply unit 8. A heat transfer gas, for example, He gas, is introduced into the heat transfer space 50a via the gas flow path 50b. The pressure of the heat transfer gas supplied to the heat transfer space 50a is introduced at a pressure of, for example, 40 torr (5333 Pa).

[0031] Multiple electrodes 5a are provided within multiple protrusions 52. In one embodiment, the multiple electrodes 5a are provided above the upper surface 51a within the multiple protrusions 52. The distance between the support surface 52a and each electrode 5a is, for example, 0.1 mm or less. Each electrode 5b is provided below the upper surface 51a and within the base 51. The distance between the upper surface 51a and each electrode 5b is, for example, 0.1 mm or less. In one embodiment, the multiple electrodes 5a and the multiple electrodes 5b may be electrically connected to each other. A power supply 9 is electrically connected to the multiple electrodes 5a and 5b. The power supply 9 applies a voltage (e.g., a DC voltage) to the multiple electrodes 5a and 5b. For example, a voltage of 2.5 kV or less is applied to each of the multiple electrodes 5a and 5b.

[0032] Hereinafter, Figure 4 will be referred to in conjunction with Figure 3. Figure 4 is a partially enlarged cross-sectional view showing an electrostatic chuck according to one exemplary embodiment. Figure 4 also shows an equivalent circuit illustrating the capacitance between each of the plurality of electrodes 5a and the substrate W, the capacitance between each of the plurality of electrodes 5b and the heat transfer space 50a, and the impedance of the plasma in the heat transfer space 50a.

[0033] In the above embodiment, a voltage can be applied to each of the multiple electrodes 5a and 5b while the heat transfer gas is supplied to the heat transfer space 50a. When a voltage is applied to the multiple electrodes 5b, plasma is generated from the heat transfer gas in the heat transfer space 50a. Specifically, as shown in Figure 4, He ions C and electrons E are ionized from the He gas.

[0034] When plasma is generated in the heat transfer space 50a, the thermal conductivity of the heat transfer space 50a is increased by the thermal conductivity due to the ionization reaction. As a result, heat transfer between the substrate W and the electrostatic chuck 5 via the heat transfer space 50a is promoted.

[0035] When plasma is generated in the heat transfer space 50a, the electrostatic attraction force acting on the substrate W via the heat transfer space 50a decreases. On the other hand, since the multiple electrodes 5a are provided within the multiple protrusions 52, no plasma is interposed between the substrate W and the multiple electrodes 5a. Therefore, even when plasma is generated in the heat transfer space 50a, a sufficient electrostatic attraction force can be generated between the multiple protrusions 52 and the substrate W by applying a voltage to the multiple electrodes 5a.

[0036] The following describes a substrate support assembly according to another exemplary embodiment. The substrate support assembly according to the other exemplary embodiment described below can be used as a substrate support assembly for the plasma processing apparatus 1. In the following, the substrate support assembly according to the other exemplary embodiment will be described in terms of differences from the substrate support assembly 11 shown in Figure 3, and redundant explanations will be omitted.

[0037] Refer to Figure 5. Figure 5 is a cross-sectional view of a substrate support assembly according to another exemplary embodiment. The substrate support assembly 11A shown in Figure 5 comprises an electrostatic chuck 5A, a base 6, and a bonding layer 7. The electrostatic chuck 5A may be used as an electrostatic chuck in a plasma processing apparatus 1.

[0038] The electrostatic chuck 5A further comprises an insulating film 53. The insulating film 53 covers at least the upper surface 51a and the side surface 52b. The insulating film 53 may also cover the support surface 52a. In the electrostatic chuck 5A, the heat transfer space 50a is defined by the insulating film 53 covering the lower surface of the substrate W, the upper surface 51a, and the side surface 52b. The insulating film 53 is formed from an insulating material. The insulating material is, for example, aluminum oxide or yttria.

[0039] In the above embodiment, the upper surface 51a defining the heat transfer space 50a and the side surfaces 52b of the multiple protrusions 52 are covered with an insulating film 53, thereby suppressing damage to the dielectric portion 50 by the plasma-generated heat transfer gas.

[0040] Although various exemplary embodiments have been described above, the invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different embodiments to form other embodiments.

[0041] In one embodiment, a plurality of heat transfer spaces 50a may be provided between the substrate W and the dielectric portion 50. That is, the upper surface 51a and a plurality of protrusions 52 may provide a plurality of heat transfer spaces 50a. The plurality of heat transfer spaces 50a may be arranged in the circumferential direction and / or radial direction. The dielectric portion 50 may provide a plurality of gas flow paths 50b connected to the plurality of heat transfer spaces 50a. Heat transfer gas is supplied to each of the plurality of heat transfer spaces 50a. The pressure of the heat transfer gas may be controlled independently for each of the plurality of heat transfer spaces 50a. According to the above embodiment, since the thermal conductivity of each of the plurality of heat transfer spaces 50a is controlled independently, the temperature controllability is improved.

[0042] Herein, various exemplary embodiments included in this disclosure are described in [E1] to [E9] below.

[0043] [E1] An electrostatic chuck used in a plasma processing apparatus, A dielectric portion having a base including an upper surface and a plurality of protrusions projecting from the upper surface of the base, each of the plurality of protrusions including a support surface for supporting a substrate placed thereon, and the dielectric portion provides a gas flow path connected to the upper surface and the heat transfer space provided above the upper surface by the upper surface and the plurality of protrusions, A first electrode provided in each of the aforementioned multiple protrusions, A second electrode is provided below the upper surface and within the base, An electrostatic chuck equipped with this feature.

[0044] In embodiment [E1], a voltage can be applied to the first electrode and the second electrode while a heat transfer gas is supplied to the heat transfer space. When a voltage is applied to the second electrode, plasma is generated from the heat transfer gas in the heat transfer space. As a result, heat transfer between the substrate and the electrostatic chuck through the heat transfer space is promoted. Furthermore, since the first electrode is provided within a plurality of protrusions, even if plasma is generated in the heat transfer space, a sufficient electrostatic attraction can be generated between the plurality of protrusions and the substrate by applying a voltage to the first electrode.

[0045] [E2] The electrostatic chuck according to [E1], further comprising an insulating film that covers at least the upper surface and the sides of the plurality of protrusions. In embodiment [E2], the upper surface and the sides of the multiple protrusions that define the heat transfer space are covered with an insulating film, so that damage to the dielectric part by the plasma-generated heat transfer gas is suppressed.

[0046] [E3] The electrostatic chuck according to [E1] or [E2], wherein the first electrode is provided above the upper surface within each of the plurality of protrusions.

[0047] [E4] The electrostatic chuck described in any one of items [E1] to [E3], wherein the first electrode and the second electrode are electrically connected to each other.

[0048] [E5] Base and, An electrostatic chuck described in any one of items [E1] to [E4], A bonding layer is provided between the electrostatic chuck and the base, and the electrostatic chuck and the base are joined together. A substrate support assembly comprising the above.

[0049] [E6] The substrate support assembly according to [E5], wherein the bonding layer is formed from a metal brazing material.

[0050] [E7] The substrate support assembly according to [E5], wherein the bonding layer is formed from an adhesive.

[0051] [E8] Chamber and, A plasma generation unit configured to generate plasma within the chamber, A substrate support assembly as described in any one of items [E5] to [E7], wherein the substrate support assembly is provided in the chamber, A plasma processing device equipped with the following features.

[0052] [E9] A power supply configured to apply a DC voltage to the first electrode and the second electrode, A heat transfer gas supply unit connected to the aforementioned gas flow path, The plasma processing apparatus described in [E8] further comprises the following:

[0053] From the above description, it will be understood that the various embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of symbols]

[0054] 1...Plasma processing apparatus, 5,5A...Electrostatic chuck, 5a...Electrode (first electrode), 5b...Electrode (second electrode), 6...Base, 7...Bonding layer, 8...Supply unit, 11,11A...Substrate support assembly, 12...Plasma generation unit, 30...Power supply, 50...Dielectric unit, 50a...Heat transfer space, 50b...Gas flow path, 51...Base, 51a...Top surface, 52...Protrusion, 52a...Support surface, 52b...Side surface, 53...Insulating film, W...Substrate.

Claims

1. An electrostatic chuck used in a plasma processing apparatus, A dielectric portion having a base including an upper surface and a plurality of protrusions projecting from the upper surface of the base, each of the plurality of protrusions including a support surface for supporting a substrate placed thereon, and the dielectric portion provides a gas flow path connected to the upper surface and a heat transfer space provided above the upper surface by the plurality of protrusions, Among the plurality of protrusions, a first electrode constituting an electrostatic electrode provided above the upper surface, A second electrode is provided below the upper surface and within the base, and is separate from the first electrode, and constitutes an electrostatic electrode. Equipped with, The distance between the upper surface and the second electrode is 0.1 mm or less. Electrostatic chuck.

2. The electrostatic chuck according to claim 1, further comprising an insulating film that covers at least the upper surface and the sides of the plurality of protrusions.

3. The electrostatic chuck according to claim 1, wherein the first electrode and the second electrode are electrically connected to each other.

4. The electrostatic chuck according to claim 1, wherein the second electrode does not extend below each of the protrusions.

5. Base and, An electrostatic chuck according to any one of claims 1 to 4, A bonding layer is provided between the electrostatic chuck and the base, and the electrostatic chuck and the base are joined together. A substrate support assembly comprising the above.

6. The substrate support assembly according to claim 5, wherein the bonding layer is formed from a metal brazing material.

7. The substrate support assembly according to claim 5, wherein the bonding layer is formed from an adhesive.

8. Chamber and, A plasma generation unit configured to generate plasma within the chamber, A substrate support assembly according to claim 5, wherein the substrate support assembly is provided in the chamber, A plasma processing apparatus equipped with the following features.

9. A power supply configured to apply a DC voltage to the first electrode and the second electrode, A heat transfer gas supply unit connected to the aforementioned gas flow path, The plasma processing apparatus according to claim 8, further comprising the following:

Images