sensor

Abstract

To achieve a sensor that can prevent the generation of cracks in an insulating layer.SOLUTION: A magnetic sensor 1 comprises: insulating layers 304, 305, 306; lower coil elements 71 that are arranged on the insulating layer 304 on the opposite side of the insulating layer 305; and second MR elements 50B. The second MR elements 50B include magnetization fixed layers 52 and free layers 54. The magnetization fixed layers 52 and the free layers 54 are arranged on the insulating layer 306 on the opposite side of the insulating layer 305. The insulating layer 304, 306 each include a first insulating material. The insulating layer 305 includes a second insulating material.SELECTED DRAWING: Figure 10

Description

Technical Field

[0001] The present invention relates to a sensor in which an insulating layer exists between a metal layer and a sensor element.

Background Art

[0002] In recent years, magnetic sensors using magnetoresistive elements have been used in various applications. In a system including a magnetic sensor, there are cases where it is desired to detect a magnetic field including a component in a direction perpendicular to the surface of a substrate by a magnetoresistive element provided on the substrate. In this case, by providing a soft magnetic material that converts a magnetic field perpendicular to the surface of the substrate into a magnetic field parallel to the surface of the substrate, or by arranging the magnetoresistive element on an inclined surface formed on the substrate, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0003] Patent Document 1 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. The magnetoresistive element constituting the Z-axis sensor is provided on the inclined surface of a protrusion formed on the base film of the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the magnetic sensor disclosed in Patent Document 1, a wiring layer or the like is provided on the substrate in advance. The base film is composed of a plurality of insulating films formed on the wiring layer. When an insulating layer is formed on a metal layer to form a support member for a magnetoresistive element as in the base film disclosed in Patent Document 1, cracks may occur in the support member during the manufacturing process of the magnetic sensor.

[0006] The above problem occurs even when there are no protrusions on the support member, as long as the requirement of forming an insulating layer on top of the metal layer is met. Furthermore, the above problem applies not only to magnetic sensors but to all sensors in which a sensor element is formed on a support member that meets the above requirements.

[0007] The present invention has been made in view of the above problems, and its objective is to provide a sensor that prevents cracks from occurring in the insulating layer in a sensor in which an insulating layer exists between a metal layer and a sensor element. [Means for solving the problem]

[0008] The sensor of the present invention is a sensor configured to detect a predetermined physical quantity. The sensor comprises a first insulating layer, a second insulating layer, and a third insulating layer arranged sequentially along a first direction, a metal layer located on the opposite side of the first insulating layer from the second insulating layer, and a sensor element configured to change its physical properties in accordance with a predetermined physical quantity. The sensor element includes a functional layer that constitutes at least a portion of the sensor element. The functional layer is located on the opposite side of the third insulating layer from the second insulating layer. Each of the first and third insulating layers contains a first insulating material. The second insulating layer contains a second insulating material. [Effects of the Invention]

[0009] In the sensor of the present invention, each of the first and third insulating layers contains the first insulating material, and the second insulating layer contains the second insulating material. As a result, according to the present invention, in a sensor in which an insulating layer exists between the metal layer and the sensor element, the occurrence of cracks in the insulating layer can be prevented. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view showing a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention. [Figure 2] Figure 1 is a plan view showing the magnetic sensor device. [Figure 3] Figure 1 is a functional block diagram showing the configuration of the magnetic sensor device. [Figure 4] This is a circuit diagram showing the circuit configuration of the first detection circuit in the first embodiment of the present invention. [Figure 5] This is a circuit diagram showing the circuit configuration of the second detection circuit in the first embodiment of the present invention. [Figure 6] This is a circuit diagram showing the circuit configuration of the third detection circuit in the first embodiment of the present invention. [Figure 7] This is a plan view showing a part of the first chip in the first embodiment of the present invention. [Figure 8] This is a cross-sectional view showing a part of the first chip in the first embodiment of the present invention. [Figure 9] This is a plan view showing a part of the second chip in the first embodiment of the present invention. [Figure 10] This is a cross-sectional view showing a part of the second chip in the first embodiment of the present invention. [Figure 11] This is a side view showing a magnetoresistive element in the first embodiment of the present invention. [Figure 12] This is a cross-sectional view showing a modified example of the second chip in the first embodiment of the present invention. [Figure 13] This is a perspective view showing a magnetic sensor according to a second embodiment of the present invention. [Figure 14] This is a cross-sectional view showing a part of a magnetic sensor according to a second embodiment of the present invention. [Figure 15] This is a perspective view showing the configuration of a current sensor system including a magnetic sensor according to a third embodiment of the present invention. [Figure 16] This is a cross-sectional view showing a magnetic sensor according to a third embodiment of the present invention. [Figure 17] This is a block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to a third embodiment of the present invention. [Figure 18] This is a circuit diagram showing the circuit configuration of the detection circuit in the third embodiment of the present invention.

Best Mode for Carrying Out the Invention

[0011] The following multiple embodiments of the present invention relate to a sensor configured to detect a predetermined physical quantity. In multiple embodiments, the sensor includes a sensor element configured such that its physical properties change according to a predetermined physical quantity. For example, the predetermined physical quantity may be at least one of the direction and intensity of a target magnetic field, which is the magnetic field of a detection target. In this case, the sensor element may be a magnetic detection element configured to detect at least one of the change in the direction and intensity of the target magnetic field. A sensor provided with a magnetic detection element is also called a magnetic sensor. The magnetic sensor is configured to detect at least one of the direction and intensity of the target magnetic field. Hereinafter, taking the case where the sensor is a magnetic sensor as an example, multiple embodiments will be described in detail.

[0012] [First Embodiment] First, referring to FIGS. 1 to 3, the configuration of a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention will be described. FIG. 1 is a perspective view showing the magnetic sensor device 100. FIG. 2 is a plan view showing the magnetic sensor device 100. FIG. 3 is a functional block diagram showing the configuration of the magnetic sensor device 100.

[0013] The magnetic sensor device 100 includes a magnetic sensor 1. The magnetic sensor 1 corresponds to the "sensor" in the present invention.

[0014] The magnetic sensor 1 is composed of a first chip 2 and a second chip 3. The magnetic sensor device 100 further includes a support 4 that supports the first and second chips 2 and 3. The first chip 2, the second chip 3, and the support 4 all have a rectangular parallelepiped shape. The support 4 has a reference plane 4a on the upper surface, a lower surface located on the opposite side of the reference plane 4a, and four side surfaces connecting the reference plane 4a and the lower surface.

[0015] Here, with reference to Figures 1 and 2, the reference coordinate system in this embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor device 100, and is a Cartesian coordinate system defined by three axes. In the reference coordinate system, the X, Y, and Z directions are defined. The X, Y, and Z directions are orthogonal to each other. In this embodiment in particular, the Z direction is the direction perpendicular to the reference plane 4a of the support 4, and the direction from the bottom surface of the support 4 toward the reference plane 4a. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes that define the reference coordinate system are the axis parallel to the X direction, the axis parallel to the Y direction, and the axis parallel to the Z direction.

[0016] Hereinafter, the position at the end of the Z-direction relative to the reference position will be referred to as "above," and the position opposite to the "above" position relative to the reference position will be referred to as "below." Furthermore, with respect to the components of the magnetic sensor device 100, the surface located at the end in the Z-direction will be referred to as the "top surface," and the surface located at the end in the -Z-direction will be referred to as the "bottom surface." Also, the expression "when viewed from the Z-direction" means viewing the object from a position far away in the Z-direction.

[0017] The first chip 2 has an upper surface 2a and a lower surface located on opposite sides, and four sides connecting the upper surface 2a and the lower surface. The second chip 3 has an upper surface 3a and a lower surface located on opposite sides, and four sides connecting the upper surface 3a and the lower surface.

[0018] The first chip 2 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The second chip 3 is mounted on the reference plane 4a of the support 4 with its lower surface facing the reference plane 4a of the support 4. The first chip 2 and the second chip 3 are joined to the support 4 by adhesives 6 and 7, respectively.

[0019] The first chip 2 has a plurality of first electrode pads 21 provided on its upper surface 2a. The second chip 3 has a plurality of second electrode pads 31 provided on its upper surface 3a. The support 4 has a plurality of third electrode pads 41 provided on a reference plane 4a. Although not shown, in the magnetic sensor device 100, two corresponding electrode pads from the plurality of first electrode pads 21, the plurality of second electrode pads 31, and the plurality of third electrode pads 41 are connected to each other by bonding wires.

[0020] Here, the dimension perpendicular to the reference plane 4a is called the thickness. As shown in Figure 1, the thickness of the first chip 2 and the thickness of the second chip 3 are the same. Also, the thickness of the support 4 is greater than the thickness of both the first chip 2 and the second chip 3.

[0021] The magnetic sensor 1 comprises a first detection circuit 10, a second detection circuit 20, and a third detection circuit 30. The first chip 2 includes the first detection circuit 10. The second chip 3 includes the second detection circuit 20 and the third detection circuit 30.

[0022] The magnetic sensor device 100 further includes a processor 40. The support 4 contains the processor 40. The first to third detection circuits 10, 20, 30 and the processor 40 are connected via a plurality of first electrode pads 21, a plurality of second electrode pads 31, a plurality of third electrode pads 41 and a plurality of bonding wires.

[0023] Each of the first to third detection circuits 10, 20, and 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In this embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive elements. Hereinafter, magnetoresistive elements will be referred to as MR elements.

[0024] The processor 40 is configured to generate a first, second, and third detection value, which correspond to the components of the magnetic field at a predetermined reference position in three different directions, by processing a plurality of detection signals generated by the first to third detection circuits 10, 20, and 30. In this embodiment, the three different directions are two directions parallel to the XY plane and a direction parallel to the Z direction. The processor 40 is configured, for example, by an application-specific integrated circuit (ASIC).

[0025] Next, the first to third detection circuits 10, 20, and 30 will be described with reference to Figures 3 to 10. Figure 4 is a circuit diagram showing the circuit configuration of the first detection circuit 10. Figure 5 is a circuit diagram showing the circuit configuration of the second detection circuit 20. Figure 6 is a circuit diagram showing the circuit configuration of the third detection circuit 30. Figure 7 is a plan view showing a part of the first chip 2. Figure 8 is a cross-sectional view showing a part of the first chip 2. Figure 9 is a plan view showing a part of the second chip 3. Figure 10 is a cross-sectional view showing a part of the second chip 3.

[0026] Here, as shown in Figures 7 and 9, the U and V directions are defined as follows: The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation by α from the X direction toward the -Y direction, and the V direction is defined as the direction of rotation by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and less than 90°. In one example, α is 45°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0027] Furthermore, as shown in Figure 10, the W1 and W2 directions are defined as follows: The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and less than 90°. The direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are orthogonal to the U direction, respectively.

[0028] The first detection circuit 10 is configured to detect a component of the target magnetic field parallel to the U direction and generate at least one first detection signal corresponding to this component. The second detection circuit 20 is configured to detect a component of the target magnetic field parallel to the W1 direction and generate at least one second detection signal corresponding to this component. The third detection circuit 30 is configured to detect a component of the target magnetic field parallel to the W2 direction and generate at least one third detection signal corresponding to this component.

[0029] As shown in Figure 4, the first detection circuit 10 includes a power supply terminal V1, a ground terminal G1, signal output terminals E11 and E12, a first resistor R11, a second resistor R12, a third resistor R13, and a fourth resistor R14. The multiple MR elements of the first detection circuit 10 constitute the first to fourth resistors R11, R12, R13, and R14.

[0030] The first resistor R11 is located between the power supply terminal V1 and the signal output terminal E11. The second resistor R12 is located between the signal output terminal E11 and the ground terminal G1. The third resistor R13 is located between the signal output terminal E12 and the ground terminal G1. The fourth resistor R14 is located between the power supply terminal V1 and the signal output terminal E12.

[0031] As shown in Figure 5, the second detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the second detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0032] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0033] As shown in Figure 6, the third detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the third detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0034] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0035] A predetermined voltage or current is applied to each of the power supply terminals V1 to V3. Each of the ground terminals G1 to G3 is connected to ground.

[0036] Hereinafter, the multiple MR elements of the first detection circuit 10 will be referred to as multiple first MR elements 50A, the multiple MR elements of the second detection circuit 20 will be referred to as multiple second MR elements 50B, and the multiple MR elements of the third detection circuit 30 will be referred to as multiple third MR elements 50C. Since the first to third detection circuits 10, 20, and 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. Furthermore, any MR element will be denoted by the reference numeral 50.

[0037] Figure 11 is a side view showing the MR element 50. The MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 52 having magnetization with a fixed direction, a free layer 54 having magnetization whose direction can change according to the direction of the target magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle that the direction of magnetization of the free layer 54 makes with respect to the direction of magnetization of the magnetization fixed layer 52. The resistance value is at its minimum when this angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy such that its easy magnetization axis direction is perpendicular to the magnetization direction of the fixed magnetization layer 52. As a means of setting the easy magnetization axis in a predetermined direction for the free layer 54, a magnet can be used to apply a bias magnetic field to the free layer 54.

[0038] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53, and free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and creates exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52. The magnetization fixed layer 52 may be a so-called self-pinned fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinned fixed layer has a stacked ferri structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

[0039] Note that the arrangement of layers 51-54 in the MR element 50 may be reversed vertically from the arrangement shown in Figure 11.

[0040] In Figures 4 to 6, the filled-in arrows represent the direction of magnetization of the magnetization fixed layer 52 of the MR element 50. The open-circle arrows represent the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0041] In the example shown in Figure 4, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R11 and R13 is in the U direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R12 and R14 is in the -U direction. Furthermore, each free layer 54 of the multiple first MR elements 50A has shape anisotropy such that the easy magnetization axis direction is parallel to the V direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R11 and R12 is in the V direction when no target magnetic field is applied to the first MR element 50A. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R13 and R14 is in the -V direction.

[0042] In the example shown in Figure 5, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R21 and R23 is in the W1 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R22 and R24 is in the -W1 direction. Furthermore, each free layer 54 of the multiple second MR elements 50B has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R21 and R22 is in the U direction when no target magnetic field is applied to the second MR element 50B. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R23 and R24 is in the -U direction.

[0043] In the example shown in Figure 6, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R31 and R33 is in the W2 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R32 and R34 is in the -W2 direction. Furthermore, each free layer 54 of the multiple third MR elements 50C has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R31 and R32 is in the U direction when no target magnetic field is applied to the third MR element 50C. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R33 and R34 is in the -U direction.

[0044] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50A, multiple second MR elements 50B, and multiple third MR elements 50C. In this embodiment, the magnetic field generator includes a first coil 70 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the first MR elements 50A, and a second coil 80 that applies a magnetic field in a predetermined direction to each of the free layer 54 of the multiple second MR elements 50B and multiple third MR elements 50C. The first chip 2 includes the first coil 70. The second chip 3 includes the second coil 80.

[0045] Furthermore, the direction of magnetization of the fixed magnetization layer 52 and the direction of the easy magnetization axis of the free layer 54 may be slightly deviated from the above-mentioned direction from the viewpoint of the accuracy of fabrication of the MR element 50. Also, the magnetization of the fixed magnetization layer 52 may be configured to include a magnetization component whose main component is the direction described above. In this case, the direction of magnetization of the fixed magnetization layer 52 will be the direction described above or approximately the direction described above.

[0046] The specific structures of the first chip 2 and the second chip 3 will be described in detail below. Figure 8 shows a portion of the cross-section at the position indicated by line 8-8 in Figure 7.

[0047] The first chip 2 includes a substrate 201 having an upper surface 201a, insulating layers 202, 203, 204, 205, 206, 207, 208, 209, 210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72. The upper surface 201a of the substrate 201 is assumed to be parallel to the XY plane. The Z direction is also a unidirectional direction perpendicular to the upper surface 201a of the substrate 201. Note that a coil element is a part of the winding of a coil. Furthermore, since the first chip 2 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes the substrate 201, insulating layers 202-210, a plurality of lower electrodes 61A, a plurality of upper electrodes 62A, a plurality of lower coil elements 71, and a plurality of upper coil elements 72.

[0048] The insulating layer 202 is placed on the substrate 201. Multiple lower coil elements 71 are placed on the insulating layer 202. The insulating layer 203 is placed on the insulating layer 202 around the multiple lower coil elements 71. Insulating layers 204, 205, and 206 are laminated in this order on the multiple lower coil elements 71 and insulating layer 203.

[0049] Multiple lower electrodes 61A are arranged on top of the insulating layer 206. The insulating layer 207 is arranged around the multiple lower electrodes 61A on top of the insulating layer 206. Multiple first MR elements 50A are arranged on top of the multiple lower electrodes 61A. The insulating layer 208 is arranged around the multiple first MR elements 50A on top of the multiple lower electrodes 61A and the insulating layer 207. Multiple upper electrodes 62A are arranged on top of the multiple first MR elements 50A and the insulating layer 208. The insulating layer 209 is arranged around the multiple upper electrodes 62A on top of the insulating layer 208.

[0050] The insulating layer 210 is placed on top of the multiple upper electrodes 62A and the insulating layer 209. The multiple upper coil elements 72 are placed on top of the insulating layer 210. The first chip 2 may further include an insulating layer (not shown) that covers the multiple upper coil elements 72 and the insulating layer 210. In Figure 7, the insulating layer 206, the multiple first MR elements 50A, and the multiple upper coil elements 72 are shown as components of the first chip 2.

[0051] The upper surface 201a of the substrate 201 is parallel to the XY plane, and the upper surfaces of each of the multiple lower electrodes 61A are also parallel to the XY plane. Therefore, in the above state, it can be said that the multiple first MR elements 50A are arranged on a plane parallel to the XY plane.

[0052] As shown in Figure 7, the multiple first MR elements 50A are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. The multiple first MR elements 50A are connected in series by multiple lower electrodes 61A and multiple upper electrodes 62A. Two adjacent first MR elements 50A may or may not be offset in a direction parallel to the V direction when viewed from the Z direction.

[0053] Here, with reference to Figure 11, the method of connecting multiple first MR elements 50A will be described in detail. In Figure 11, reference numeral 61 indicates a lower electrode corresponding to any MR element 50, and reference numeral 62 indicates an upper electrode corresponding to any MR element 50. As shown in Figure 11, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction. On the upper surface of the lower electrode 61, MR elements 50 are arranged near both ends in the longitudinal direction. Each upper electrode 62 also has an elongated shape and is arranged on two adjacent lower electrodes 61 in the longitudinal direction to electrically connect two adjacent MR elements 50.

[0054] Although not shown, one MR element 50 located at the end of a row of multiple MR elements 50 arranged in a single line is connected to another MR element 50 located at the end of an adjacent row of multiple MR elements 50 in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by electrodes (not shown). The electrodes (not shown) may be electrodes connecting the lower surfaces of the two MR elements 50 or the upper surfaces of the two MR elements 50.

[0055] If the MR element 50 shown in Figure 11 is the first MR element 50A, then the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61A, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62A. In this case, the longitudinal direction of the lower electrode 61 is parallel to the V direction.

[0056] In this embodiment, a multilayer film including an antiferromagnetic layer 51, a magnetization-fixed layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, the MR element in this embodiment may also consist of this multilayer film, a lower electrode 61, and an upper electrode 62. The multilayer film includes a plurality of magnetic films.

[0057] Each of the multiple upper coil elements 72 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 72 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, each of the multiple first MR elements 50A has two upper coil elements 72 overlapping.

[0058] Each of the multiple lower coil elements 71 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 71 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 71 may be the same as or different from the shape and arrangement of the multiple upper coil elements 72. In the examples shown in Figures 7 and 8, the X-direction dimension of each of the multiple lower coil elements 71 is smaller than the X-direction dimension of each of the multiple upper coil elements 72. Also, the distance between two adjacent lower coil elements 71 in the X direction is smaller than the distance between two adjacent upper coil elements 72 in the X direction.

[0059] In the examples shown in Figures 7 and 8, the multiple lower coil elements 71 and the multiple upper coil elements 72 are electrically connected to constitute a first coil 70 that applies a magnetic field parallel to the X direction to each of the free layers 54 of the multiple first MR elements 50A. The first coil 70 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R11 and R12, and a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R13 and R14. The first coil 70 may also be controlled by a processor 40.

[0060] Next, the structure of the second tip 3 will be described with reference to Figures 9 and 10. Figure 10 shows a portion of the cross-section at the position indicated by line 10-10 in Figure 9.

[0061] The second chip 3 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is assumed to be parallel to the XY plane. The Z direction is also a unidirectional direction perpendicular to the upper surface 301a of the substrate 301. Since the second chip 3 is a component of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes the substrate 301, insulating layers 302-310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82.

[0062] The insulating layer 302 is placed on the substrate 301. Multiple lower coil elements 81 are placed on the insulating layer 302. The insulating layer 303 is placed on the insulating layer 302 around the multiple lower coil elements 81. Insulating layers 304, 305, and 306 are laminated in this order on the multiple lower coil elements 81 and insulating layer 303.

[0063] Multiple lower electrodes 61B and multiple lower electrodes 61C are arranged on an insulating layer 306. An insulating layer 307 is arranged on the insulating layer 306 around the multiple lower electrodes 61B and multiple lower electrodes 61C. Multiple second MR elements 50B are arranged on the multiple lower electrodes 61B. Multiple third MR elements 50C are arranged on the multiple lower electrodes 61C. An insulating layer 308 is arranged on the multiple lower electrodes 61B, multiple lower electrodes 61C and insulating layer 307 around the multiple second MR elements 50B and multiple third MR elements 50C. Multiple upper electrodes 62B are arranged on the multiple second MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are arranged on the multiple third MR elements 50C and insulating layer 308. An insulating layer 309 is arranged on the insulating layer 308 around the multiple upper electrodes 62B and multiple upper electrodes 62C.

[0064] The insulating layer 310 is positioned on a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are positioned on the insulating layer 310. The second tip 3 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0065] The second chip 3 includes a support member 320 that supports a plurality of second MR elements 50B and a plurality of third MR elements 50C. The support member 320 has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment in particular, the support member 320 is composed of insulating layers 304, 305, and 306. Figure 9 shows the support member 320, the plurality of second MR elements 50B, the plurality of third MR elements 50C, and the plurality of upper coil elements 82 among the components of the second chip 3.

[0066] Each support member 320 has a plurality of convex surfaces 320c that protrude in the direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the plurality of convex surfaces 320c extends in a direction parallel to the U direction. The overall shape of the convex surface 320c is a semi-cylindrical curved surface formed by moving the curved shape (arch shape) of the convex surface 320c shown in Figure 10 along a direction parallel to the U direction. The plurality of convex surfaces 320c are arranged at predetermined intervals in a direction parallel to the V direction.

[0067] Each of the multiple convex surfaces 320c has an upper end that is furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end of each of the multiple convex surfaces 320c is assumed to extend in a direction parallel to the U direction. Now, let us focus on any one of the multiple convex surfaces 320c. The convex surface 320c includes a first inclined surface 320a and a second inclined surface 320b. The first inclined surface 320a is the surface of the convex surface 320c that is on the V direction side of the upper end of the convex surface 320c. The second inclined surface 320b is the surface of the convex surface 320c that is on the -V direction side of the upper end of the convex surface 320c. In Figure 9, the boundary between the first inclined surface 320a and the second inclined surface 320b is shown by a dotted line.

[0068] The upper end of the convex surface 320c may be the boundary between the first inclined surface 320a and the second inclined surface 320b. In this case, the dotted line shown in Figure 9 indicates the upper end of the convex surface 320c.

[0069] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 320a and the second inclined surface 320b are each inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 320a and the second inclined surface 320b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0070] In this embodiment, since there are multiple convex surfaces 320c, there are also multiple first inclined surfaces 320a and multiple second inclined surfaces 320b. The support member 320 has multiple first inclined surfaces 320a and multiple second inclined surfaces 320b.

[0071] The support member 320 further has flat surfaces 320d surrounding the plurality of convex surfaces 320c. The flat surfaces 320d are parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 320c protrudes from the flat surfaces 320d in the Z direction. In this embodiment, the plurality of convex surfaces 320c are arranged with a predetermined interval between them. Therefore, a flat surface 320d exists between two adjacent convex surfaces 320c in the V direction.

[0072] In this embodiment, the multiple convex surfaces 320c and flat surfaces 320d are substantially formed by the insulating layer 305. That is, the insulating layer 305 includes multiple protrusions 305C that project in the Z direction and flat surfaces 305D that surround the multiple protrusions 305C. Each of the multiple protrusions 305C extends in a direction parallel to the U direction and has an upper surface with a shape corresponding to the convex surface 320c. The multiple protrusions 305C are arranged at predetermined intervals in a direction parallel to the V direction. The thickness (dimension in the Z direction) of the flat surfaces 305D is substantially constant. The insulating layer 306 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of the insulating layer 305. As a result, the upper surface of the insulating layer 306 becomes the multiple convex surfaces 320c and flat surfaces 320d.

[0073] The insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305.

[0074] Multiple lower electrodes 61B are arranged on multiple first inclined surfaces 320a. Multiple lower electrodes 61C are arranged on multiple second inclined surfaces 320b. As described above, since each of the first inclined surface 320a and the second inclined surface 320b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined with respect to the XY plane. Therefore, it can be said that the multiple second MR elements 50B and the multiple third MR elements 50C are arranged on inclined surfaces that are inclined with respect to the XY plane. The support member 320 is a member for supporting each of the multiple second MR elements 50B and the multiple third MR elements 50C so that they are inclined with respect to the XY plane.

[0075] In this embodiment, the first inclined surface 320a is a curved surface. Therefore, the second MR element 50B curves along the curved surface (the first inclined surface 320a). In this embodiment, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50B is defined as a linear direction as described above. The W1 direction and -W1 direction, which are the directions of magnetization of the magnetization fixed layer 52 of the second MR element 50B, are also the directions in which the tangents that are in contact with the portion of the first inclined surface 320a near the second MR element 50B extend.

[0076] Similarly, in this embodiment, the second inclined surface 320b is a curved surface. Therefore, the third MR element 50C curves along the curved surface (the second inclined surface 320b). In this embodiment, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the third MR element 50C is defined as a linear direction as described above. The W2 direction and -W2 direction, which are the directions of magnetization of the magnetization fixed layer 52 of the third MR element 50C, are also the directions in which the tangents that are in contact with the portion of the second inclined surface 320b near the third MR element 50C extend.

[0077] As shown in Figure 9, the multiple second MR elements 50B are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple second MR elements 50B are lined up in a row on one first inclined surface 320a. Similarly, the multiple third MR elements 50C are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple third MR elements 50C are lined up in a row on one second inclined surface 320b. In this embodiment, the rows of multiple second MR elements 50B and rows of multiple third MR elements 50C are arranged alternately in a direction parallel to the V direction.

[0078] Furthermore, one adjacent second MR element 50B and one adjacent third MR element 50C may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two adjacent second MR elements 50B separated by one third MR element 50C may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two adjacent third MR elements 50C separated by one second MR element 50B may or may not be offset in a direction parallel to the U direction when viewed from the Z direction.

[0079] Multiple second MR elements 50B are connected in series by multiple lower electrodes 61B and multiple upper electrodes 62B. The explanation of the connection method for multiple first MR elements 50A described above also applies to the connection method for multiple second MR elements 50B. When the MR element 50 shown in Figure 11 is a second MR element 50B, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61B, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62B. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0080] Similarly, multiple third MR elements 50C are connected in series by multiple lower electrodes 61C and multiple upper electrodes 62C. The explanation above regarding the connection method of multiple first MR elements 50A also applies to the connection method of multiple third MR elements 50C. When the MR element 50 shown in Figure 11 is a third MR element 50C, the lower electrode 61 shown in Figure 11 corresponds to the lower electrode 61C, and the upper electrode 62 shown in Figure 11 corresponds to the upper electrode 62C. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0081] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, two upper coil elements 82 overlap each of the multiple second MR elements 50B and the multiple third MR elements 50C.

[0082] Each of the multiple lower coil elements 81 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. In the examples shown in Figures 9 and 10, the X-direction dimension of each of the multiple lower coil elements 81 is smaller than the X-direction dimension of each of the multiple upper coil elements 82. Also, the distance between two adjacent lower coil elements 81 in the X direction is smaller than the distance between two adjacent upper coil elements 82 in the X direction.

[0083] In the examples shown in Figures 9 and 10, the multiple lower coil elements 81 and the multiple upper coil elements 82 are electrically connected to constitute a second coil 80 that applies a magnetic field parallel to the X direction to the free layers 54 of each of the multiple second MR elements 50B and the multiple third MR elements 50C. The second coil 80 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R21, R22 of the second detection circuit 20 and the first and second resistors R31, R32 of the third detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R23, R24 of the second detection circuit 20 and the third and fourth resistors R33, R34 of the third detection circuit 30. The second coil 80 may also be controlled by the processor 40.

[0084] Next, the first to third detection signals will be described. First, the first detection signal will be described with reference to Figure 4. When the intensity of the component of the target magnetic field parallel to the U direction changes, the resistance values ​​of each of the resistors R11 to R14 of the first detection circuit 10 change such that the resistance values ​​of resistors R11 and R13 increase while the resistance values ​​of resistors R12 and R14 decrease, or the resistance values ​​of resistors R11 and R13 decrease while the resistance values ​​of resistors R12 and R14 increase. As a result, the potentials of the signal output terminals E11 and E12 change. The first detection circuit 10 is configured to generate a signal corresponding to the potential of the signal output terminal E11 as the first detection signal S11, and a signal corresponding to the potential of the signal output terminal E12 as the first detection signal S12.

[0085] Next, the second detection signal will be explained with reference to Figure 5. When the intensity of the component of the target magnetic field parallel to the W1 direction changes, the resistance values ​​of the resistors R21 to R24 of the second detection circuit 20 change such that the resistance values ​​of resistors R21 and R23 increase while the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease while the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The second detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the second detection signal S21, and a signal corresponding to the potential of the signal output terminal E22 as the second detection signal S22.

[0086] Next, the third detection signal will be described with reference to Figure 6. When the intensity of the component of the target magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 of the third detection circuit 30 change such that the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The third detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the third detection signal S31, and a signal corresponding to the potential of the signal output terminal E32 as the third detection signal S32.

[0087] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value based on the first detection signals S11 and S12. The first detection value is the detection value corresponding to the component in the direction parallel to the U direction of the target magnetic field. Hereafter, the first detection value will be represented by the symbol Su.

[0088] In this embodiment, the processor 40 generates a first detected value Su by performing a calculation that includes determining the difference S11-S12 between the first detected signal S11 and the first detected signal S12. The first detected value Su may be the difference S11-S12 itself, or it may be the difference S11-S12 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0089] The processor 40 is further configured to generate a second detection value and a third detection value based on the second detection signals S21, S22 and the third detection signals S31, S32. The second detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The third detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereinafter, the second detection value will be denoted by the symbol Sv and the third detection value will be denoted by the symbol Sz.

[0090] The processor 40 generates the second and third detection values ​​Sv and Sz, for example, as follows. First, the processor 40 generates value S1 by a calculation that includes finding the difference S21-S22 between the second detection signal S21 and the second detection signal S22, and then generates value S2 by a calculation that includes finding the difference S31-S32 between the third detection signal S31 and the third detection signal S32. Next, the processor 40 calculates values ​​S3 and S4 using the following equations (1) and (2).

[0091] S3 = (S2 + S1) / (2cosα) …(1) S4 = (S2 - S1) / (2sinα) …(2)

[0092] The second detected value Sv may be the value S3 itself, or it may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been applied. Similarly, the third detected value Sz may be the value S4 itself, or it may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0093] Next, the structural features of the magnetic sensor 1 will be described. First, with reference to Figure 8, the features of the first chip 2 of the magnetic sensor 1 will be described. The first chip 2 includes insulating layers 204, 205, and 206 arranged sequentially along the Z direction, a lower coil element 71 which is a metal layer, and a first MR element 50A which is a sensor element.

[0094] The first MR element 50A includes at least two magnetic films, namely a magnetized fixed layer 52 and a free layer 54. These two magnetic films constitute a part (essential part) of the first MR element 50A. Hereinafter, these two magnetic films will be referred to as the functional layer. The functional layer is located on the opposite side of the insulating layer 205 in the insulating layer 206.

[0095] The lower coil element 71 is located on the opposite side of the insulating layer 204 from the insulating layer 205. The lower coil element 71 is part of the first coil 70. The lower coil element 71 is formed of, for example, Cu, Au, or Al.

[0096] Each of the insulating layers 204 and 206 contains a first insulating material. Insulating layer 205 contains a second insulating material. The second insulating material is different from the first insulating material. Preferably, the second insulating material has a greater fracture toughness value than the metal layer, i.e., the lower coil element 71. The second insulating material may be, for example, SiO2.

[0097] The first insulating material is preferably more fracture tough than the second insulating material. The first insulating material may be, for example, Al2O3, SiN, AlN, or MgO. In particular, if the second insulating material is SiO2, Al2O3 may be used as the first insulating material. Furthermore, it is preferable that each of the insulating layers 204 and 206 is formed of the same first insulating material.

[0098] The insulating layer 205 includes a flat portion with a constant dimension in the Z direction. The functional layers (magnetized fixed layer 52 and free layer 54) are arranged along this flat portion. Furthermore, the maximum dimension of the insulating layer 205 in the Z direction may be greater than the maximum dimension of the insulating layer 204 and the maximum dimension of the insulating layer 206 in the Z direction.

[0099] Next, with reference to Figure 10, the features of the second chip 3 of the magnetic sensor 1 will be described. The second chip 3 includes insulating layers 304, 305, and 306 arranged sequentially along the Z direction, a lower coil element 81 which is a metal layer, and second and third MR elements 50B and 50C which are sensor elements.

[0100] Each of the second and third MR elements 50B and 50C, like the first MR element 50A, includes at least a functional layer (a magnetization fixed layer 52 and a free layer 54). The functional layer of each of the second and third MR elements 50B and 50C is located on the opposite side of the insulating layer 305 in the insulating layer 306.

[0101] The lower coil element 81 is located on the opposite side of the insulating layer 305 in the insulating layer 304. The lower coil element 81 is part of the second coil 80. The lower coil element 81 is formed of, for example, Cu, Au, or Al.

[0102] Each of the insulating layers 304 and 306 contains a first insulating material, similar to insulating layers 204 and 206. Insulating layer 305 contains a second insulating material, similar to insulating layer 205. Preferably, each of the insulating layers 304 and 306 is formed of the same first insulating material.

[0103] The insulating layer 305 includes a first portion and a second portion positioned differently from the first portion in a direction perpendicular to the Z direction. The maximum dimension of the second portion in the Z direction is greater than the maximum dimension of the first portion in the Z direction. In this embodiment, the flat portion 305D of the insulating layer 305 corresponds to the first portion, and the protruding portion 305C of the insulating layer 305 corresponds to the second portion.

[0104] The protruding portion 305C has a first inclined surface and a second inclined surface that are inclined with respect to the Z direction. The first inclined surface 320a of the support member 320 has a shape corresponding to the first inclined surface of the protruding portion 305C. The second inclined surface 320b of the support member 320 has a shape corresponding to the second inclined surface of the protruding portion 305C. The functional layer of the second MR element 50B is arranged along the first inclined surface of the protruding portion 305C. The functional layer of the third MR element 50C is arranged along the second inclined surface of the protruding portion 305C.

[0105] As described above, the protruding portion 305C extends in a direction parallel to the U direction, and the lower coil element 81 extends in a direction parallel to the Y direction. Therefore, when viewed from the Z direction, the lower coil element 81 extends so as to intersect with the boundary between the protruding portion 305C and the flat portion 305D.

[0106] Next, the operation and effects of the magnetic sensor 1 according to this embodiment will be described. First, the first chip 2 will be used as an example. In this embodiment, insulating layers 204, 205, and 206 are present between the lower coil element 71 and the first MR element 50A. In a magnetic sensor in which an insulating layer is placed between a metal layer and an MR element, cracks may occur in the insulating layer during the manufacturing process of the magnetic sensor due to differences in the materials of the metal layer and the insulating layer.

[0107] In contrast, in this embodiment, the space between the lower coil element 71 and the first MR element 50A is made of a laminated structure of insulating layers 204, 205, and 206, thereby suppressing the occurrence of cracks in the insulating layers 204, 205, and 206. The reasons why the occurrence of cracks is suppressed include, for example, the following: When the total thickness of insulating layers 204, 205, and 206 is made equal to the thickness of one insulating layer and compared, the thickness of each insulating layer 204, 205, and 206 is smaller than that of a single insulating layer. As a result, the number of defects contained in each of the insulating layers 204, 205, and 206 is reduced.

[0108] Incidentally, during the research conducted by the inventors of this invention, it was found that the susceptibility to cracking differs depending on the combination of insulating materials that constitute each of the insulating layers 204, 205, and 206. In this embodiment, insulating layers 204 and 206 each contain a first insulating material, and insulating layer 205 contains a second insulating material. That is, in this embodiment, insulating layer 204 formed on the lower surface side of insulating layer 205 and insulating layer 206 formed on the upper surface side of insulating layer 205 are formed from the same insulating material. As a result, according to this embodiment, it is possible to suppress the occurrence of cracks in insulating layer 205 due to differences in the material of the layer formed on the lower surface side of insulating layer 205 and the material of the layer formed on the upper surface side of insulating layer 205.

[0109] Furthermore, in this embodiment, it is preferable to make the fracture toughness value of the second insulating material greater than the fracture toughness value of the metal material constituting the lower coil element 71. This makes it possible to more effectively suppress the occurrence of cracks in the insulating layer 205 according to this embodiment. Furthermore, in this embodiment, it is preferable to make the fracture toughness value of the first insulating material greater than the fracture toughness value of the second insulating material. This makes it possible to more effectively suppress the occurrence of cracks in the insulating layers 204, 205, and 206 according to this embodiment.

[0110] The above description of the first chip 2 also applies to the second chip 3. If you replace the insulating layers 204, 205, 206 and the lower coil element 71 in the above description of the first chip 2 with insulating layers 304, 305, 306 and the lower coil element 81, respectively, and replace the first MR element 50A with the second MR element 50B or the third MR element 50C, you will get the description of the second chip 3.

[0111] Furthermore, in the second chip 3, the insulating layer 305 has a discontinuous structure including a protruding portion 305C and a flat portion 305D. In particular, in the second chip 3, the lower coil element 81 extends so as to intersect with the boundary between the protruding portion 305C and the flat portion 305D. Therefore, the insulating layer 305 is more prone to cracking than an insulating layer having a uniform structure. In contrast, according to this embodiment, by forming an insulating layer 304 on the lower side of the insulating layer 305 and an insulating layer 306 on the upper side of the insulating layer 305, it is possible to suppress the occurrence of cracks in the insulating layer 305.

[0112] [Differentiation] Next, with reference to Figure 12, a modified example of the second tip 3 in this embodiment will be described. In the modified example, the overall shape of each of the multiple convex surfaces 320c of the support member 320 of the second tip 3 is a triangular roof shape formed by moving the triangular shape of the convex surface 320c shown in Figure 12 along a direction parallel to the U direction. In addition, each of the multiple first inclined surfaces 320a and the multiple second inclined surfaces 320b of the support member 320 is a plane. Each of the multiple first inclined surfaces 320a is a plane parallel to the U direction and the W1 direction. Each of the multiple second inclined surfaces 320b is a plane parallel to the U direction and the W2 direction.

[0113] The insulating layer 305 may include a plurality of protrusions that form a plurality of convex surfaces 320c, similar to the example shown in Figure 10. Alternatively, the insulating layer 305 may include a plurality of grooves arranged in a direction parallel to the V direction. Each of the plurality of grooves has a first wall surface corresponding to a first inclined surface 320a and a second wall surface corresponding to a second inclined surface 320b. A single convex surface 320c is formed by the first wall surface of one groove and the second wall surface of another groove adjacent to this groove on the -V direction side.

[0114] In the example shown in Figure 12, each of the multiple grooves further has a bottom surface corresponding to the flat surface 320d. However, each of the multiple grooves does not necessarily have to have a bottom surface.

[0115] [Second Embodiment] Next, a magnetic sensor according to a second embodiment of the present invention will be described with reference to Figures 13 and 14. Figure 13 is a perspective view showing the magnetic sensor according to this embodiment. Figure 14 is a cross-sectional view showing a part of the magnetic sensor according to this embodiment.

[0116] The magnetic sensor 101 according to this embodiment corresponds to an integrated version of the first chip 2 and the second chip 3 in the first embodiment. As shown in Figure 13, the magnetic sensor 101 has the form of a rectangular parallelepiped chip. The magnetic sensor 101 has an upper surface 101a and a lower surface located on opposite sides, and four sides connecting the upper surface 101a and the lower surface. The magnetic sensor 101 also has a plurality of electrode pads provided on the upper surface 101a.

[0117] The magnetic sensor 101 may be mounted on the support 4 shown in Figures 1 and 2 in the first embodiment. In this case, the magnetic sensor 101 is mounted on the reference plane 4a with its lower surface facing the reference plane 4a of the support 4.

[0118] Furthermore, the magnetic sensor 101 includes the first to third detection circuits 10, 20, and 30, and the first and second coils 70 and 80, as shown in Figures 3 to 6 in the first embodiment. The configuration and operation of each of the first to third detection circuits 10, 20, and 30, and the first and second coils 70 and 80, are the same as in the first embodiment. That is, the first detection circuit 10 includes a plurality of first MR elements 50A. The second detection circuit 20 includes a plurality of second MR elements 50B. The third detection circuit 30 includes a plurality of third MR elements 50C. The first coil 70 includes a plurality of lower coil elements 71 and a plurality of upper coil elements 72. The second coil 80 includes a plurality of lower coil elements 81 and a plurality of upper coil elements 82.

[0119] Furthermore, the magnetic sensor 101 also includes a plurality of lower electrodes 61A, 61B, 61C and a plurality of upper electrodes 62A, 62B, 62C as described in the first embodiment. The connection methods for each of the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C are the same as in the first embodiment.

[0120] As shown in Figure 14, the magnetic sensor 101 further includes a substrate 111 having an upper surface 111a, and insulating layers 112, 113, 114, 115, 116, 117, 118, 119, and 120. The upper surface 111a of the substrate 111 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 111a of the substrate 111. The insulating layer 112 is placed on the substrate 111. In this embodiment, a plurality of lower coil elements 71 and a plurality of lower coil elements 81 are placed on the insulating layer 112. The insulating layer 113 is placed on the insulating layer 112 around the plurality of lower coil elements 71 and the plurality of lower coil elements 81. The insulating layers 114, 115, and 116 are stacked in this order on the plurality of lower coil elements 71, the plurality of lower coil elements 81 and the insulating layer 113.

[0121] In this embodiment, the multiple lower electrodes 61A, 61B, and 61C are arranged on an insulating layer 116. The insulating layer 117 is arranged on the insulating layer 116 around the multiple lower electrodes 61A, 61B, and 61C. The multiple first MR elements 50A are arranged on the multiple lower electrodes 61A. The multiple second MR elements 50B are arranged on the multiple lower electrodes 61B. The multiple third MR elements 50C are arranged on the multiple lower electrodes 61C.

[0122] The insulating layer 118 is arranged around the plurality of first MR elements 50A, the plurality of second MR elements 50B, and the plurality of third MR elements 50C on top of the plurality of lower electrodes 61A, the plurality of lower electrodes 61B, the plurality of lower electrodes 61C and the insulating layer 117. The plurality of upper electrodes 62A are arranged on top of the plurality of first MR elements 50A and the insulating layer 118. The plurality of upper electrodes 62B are arranged on top of the plurality of second MR elements 50B and the insulating layer 118. The plurality of upper electrodes 62C are arranged on top of the plurality of third MR elements 50C and the insulating layer 118. The insulating layer 119 is arranged around the plurality of upper electrodes 62A, the plurality of upper electrodes 62B, and the plurality of upper electrodes 62C on top of the insulating layer 118.

[0123] The insulating layer 120 is arranged on a plurality of upper electrodes 62A, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C and an insulating layer 119. In this embodiment, a plurality of upper coil elements 72 and a plurality of upper coil elements 82 are arranged on the insulating layer 120. The magnetic sensor 101 may further include an insulating layer (not shown) that covers the plurality of upper coil elements 72, a plurality of upper coil elements 82 and an insulating layer 120.

[0124] The magnetic sensor 101 includes a support member 130 that supports a plurality of MR elements 50. The support member 130 has at least one inclined surface that is inclined with respect to the upper surface 111a of the substrate 111. In particular in this embodiment, the support member 130 is composed of insulating layers 114, 115, and 116. The support member 130 has a plurality of convex surfaces 130c that each protrude in the direction away from the upper surface 111a of the substrate 111 (Z direction), and flat surfaces 130d that exist around the plurality of convex surfaces 130c. The shape and arrangement of the plurality of convex surfaces 130c are the same as the shape and arrangement of the plurality of convex surfaces 320c in the first embodiment.

[0125] Each of the multiple convex surfaces 130c includes a first inclined surface 130a and a second inclined surface 130b. Thus, the support member 130 has multiple first inclined surfaces 130a and multiple second inclined surfaces 130b. The shape and arrangement of the multiple first inclined surfaces 130a are the same as the shape and arrangement of the multiple first inclined surfaces 320a in the first embodiment. The shape and arrangement of the multiple second inclined surfaces 130b are the same as the shape and arrangement of the multiple second inclined surfaces 320b in the first embodiment.

[0126] The magnetic sensor 101 includes a first portion on which a plurality of first MR elements 50A are arranged, and a second portion on which a plurality of second MR elements 50B and a plurality of third MR elements 50C are arranged. The plurality of convex surfaces 130c are substantially formed by portions belonging to the second portion of the insulating layer 115. That is, the above portion of the insulating layer 115 includes a plurality of protrusions 115C each projecting in the Z direction. Each of the plurality of protrusions 115C extends in a direction parallel to the U direction and has an upper surface with a shape corresponding to the convex surface 130c. The plurality of protrusions 115C are also arranged at predetermined intervals in a direction parallel to the V direction.

[0127] The insulating layer 115 further includes a flat portion 115D. The thickness (dimension in the Z direction) of the flat portion 115D is substantially constant. The flat surface 130d is substantially composed of a flat portion 115D belonging to the first part of the magnetic sensor 101 and a flat portion 115D located around a plurality of protrusions 115C in the second part of the magnetic sensor 101.

[0128] The insulating layer 116 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of the insulating layer 115. As a result, the upper surface of the insulating layer 116 has multiple convex surfaces 130c and flat surfaces 130d. The insulating layer 114 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 115.

[0129] In this embodiment, the multiple lower electrodes 61A are arranged on a flat surface 130d. The upper surface 111a of the substrate 111 is parallel to the XY plane, and the upper surfaces of each of the multiple lower electrodes 61A are also parallel to the XY plane.

[0130] Furthermore, in this embodiment, the multiple lower electrodes 61B are arranged on the multiple first inclined surfaces 130a. The multiple lower electrodes 61C are arranged on the multiple second inclined surfaces 130b. Since each of the first inclined surfaces 130a and the second inclined surfaces 130b is inclined with respect to the upper surface 111a of the substrate 111, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined with respect to the XY plane.

[0131] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0132] [Third Embodiment] Next, a third embodiment of the present invention will be described. First, with reference to Figure 15, the configuration of the current sensor system including the magnetic sensor according to this embodiment will be described. The magnetic sensor 410 according to this embodiment is used as a current sensor to detect the value of the target current flowing through a conductor. The target current corresponds to a "predetermined physical quantity" in the present invention. Figure 15 shows an example in which the conductor through which the target current flows is a busbar 402. The magnetic sensor 410 is placed near the busbar 402. Hereinafter, the target current will be referred to as the target current Itg. A magnetic field 403 is generated around the busbar 402 by the target current Itg. The magnetic sensor 410 is placed at a position to which the magnetic field 403 is applied.

[0133] Next, the configuration of the magnetic sensor 410 according to this embodiment will be described with reference to Figure 16. Figure 16 is a cross-sectional view showing the magnetic sensor 410. The magnetic sensor 410 is a magnetic balance type current sensor. As shown in Figure 16, the magnetic sensor 410 comprises a coil 411 and a detection circuit 412 including a plurality of magnetic detection elements. The coil 411 and the detection circuit 412 are integrated by a plurality of insulating layers, which will be described later. The magnetic sensor 410 is independent of the busbar 402.

[0134] Here, as shown in Figures 15 and 16, the X, Y, and Z directions in this embodiment are defined. In this embodiment, the direction in which the target current Itg shown in Figure 15 flows is defined as the Y direction. Furthermore, with respect to the components of the magnetic sensor 410, the surface located at the end in the Z direction is called the "top surface," and the surface located at the end in the -Z direction is called the "bottom surface."

[0135] The magnetic sensor 410 is positioned either above the busbar 402 (on the Z-direction side of the busbar 402) or below the busbar 402 (on the -Z-direction side of the busbar 402). The following example shows the magnetic sensor 410 positioned above the busbar 402.

[0136] Here, of the magnetic field 403 generated by the target current Itg, the magnetic field detectable by the detection circuit 412 is called the first magnetic field H1. The coil 411 is for generating a second magnetic field H2 that cancels out the first magnetic field H1. The multiple magnetic detection elements of the detection circuit 412 are configured to detect the combined magnetic field of the first magnetic field H1 and the second magnetic field H2 as the target magnetic field to be detected (the magnetic field to be detected). The detection circuit 412 is also configured to generate a magnetic field detection value S according to the strength of the target magnetic field. The first magnetic field H1 and the second magnetic field H2 are shown in Figure 17, which will be explained later.

[0137] In this embodiment, the direction of the first magnetic field H1, the direction of the second magnetic field H2, and the direction of the target magnetic field are parallel to the X direction. The configuration of the detection circuit 412 will be described in detail later.

[0138] As shown in Figure 16, the magnetic sensor 410 further comprises a substrate 461 having an upper surface 461a, insulating layers 462, 463, 464, 465, 466, 467, 468, a lower coil element 411L, and an upper coil element 411U. The insulating layer 462 is placed on the substrate 461. The lower coil element 411L is placed on the insulating layer 462. The insulating layer 463 is placed on the insulating layer 462 and around the lower coil element 411L. The insulating layers 464, 465, 466 are laminated in this order on the lower coil element 411L and the insulating layer 463.

[0139] The detection circuit 412 is located on top of the insulating layer 466. The insulating layer 467 is located so as to cover the detection circuit 412 and the insulating layer 466. The upper coil element 411U is located on top of the insulating layer 467. The insulating layer 468 is located so as to cover the upper coil element 411U and the insulating layer 467.

[0140] The magnetic sensor 410 may further include a magnetic layer (not shown). The magnetic layer has the function of capturing a portion of the magnetic flux generated by the target current Itg, thereby reducing the absolute value of the first magnetic field H1 compared to the case without the magnetic layer. The magnetic layer is disposed, for example, on top of the insulating layer 468.

[0141] The lower coil element 411L and the upper coil element 411U are electrically connected to form a coil 411. Note that multiple lower coil elements 411L and upper coil elements 411U may be provided.

[0142] Next, the circuit connected to the magnetic sensor 410 will be described with reference to Figure 17. The magnetic sensor 410 and the circuit connected to it constitute the magnetic sensor device 401. Figure 17 is a block diagram showing the configuration of the magnetic sensor device 401. As shown in Figure 17, the magnetic sensor device 401 comprises a magnetic sensor 410, a feedback circuit 430, and a current detector 440. The feedback circuit 430 controls the feedback current to generate a second magnetic field H2 according to the magnetic field detection value S and flows it through the coil 411. The current detector 440 generates a detected value of the feedback current flowing through the coil 411. The current detector 440 is, for example, a resistor inserted in the current path of the feedback current. The potential difference across this resistor corresponds to the detected value of the feedback current. Hereinafter, the detected value of the feedback current generated by the current detector 440 will be called the current detection value. The current detection value is proportional to the value of the target current Itg. Therefore, the current detection value corresponds to the detected value of the target current Itg.

[0143] The feedback circuit 430 includes a feedback control circuit 431. The feedback control circuit 431 generates a feedback current controlled according to the magnetic field detection value S and supplies it to the coil 411.

[0144] Next, the configuration of the detection circuit 412 will be described in detail. As mentioned above, the detection circuit 412 includes a plurality of magnetic detection elements. The magnetic detection elements may be, for example, MR elements or Hall elements. The MR elements may be spin-valve type MR elements or AMR (anisotropic magnetoresistance) elements. In particular, in this embodiment, the detection circuit 412 includes a plurality of spin-valve type MR elements 450 as a plurality of magnetic detection elements. The configuration of each of the plurality of MR elements 450 is the same as the configuration of the MR element 50 described in the first embodiment. Each of the plurality of MR elements 450 includes the magnetization fixed layer 52, gap layer 53, and free layer 54 described in the first embodiment. Each of the plurality of MR elements 450 may further include the antiferromagnetic layer 51 described in the first embodiment.

[0145] Figure 18 is a circuit diagram showing the circuit configuration of the detection circuit 412. The detection circuit 412 includes a power supply terminal V4, a ground terminal G4, two signal output terminals E41 and E42, a difference detector 421, a first resistor R41, a second resistor R42, a third resistor R43, and a fourth resistor R44.

[0146] The first resistor R41 is located between the power supply terminal V4 and the signal output terminal E41. The second resistor R42 is located between the signal output terminal E41 and the ground terminal G4. The third resistor R43 is located between the signal output terminal E42 and the ground terminal G4. The fourth resistor R44 is located between the power supply terminal V4 and the signal output terminal E42. A predetermined voltage or current is applied to the power supply terminal V4. The ground terminal G4 is connected to ground.

[0147] Each of the first to fourth resistive sections R41 to R44 includes at least one MR element 450. The magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R41 and R43 is the first magnetization direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R42 and R44 is the second magnetization direction, which is opposite to the first magnetization direction. Here, the direction parallel to the first magnetization direction and the second magnetization direction is called the magnetizing direction. The free layer 54 of the MR element 450 preferably has shape anisotropy with an easy axis in a direction perpendicular to the magnetizing direction.

[0148] The detection circuit 412 is subjected to the magnetic field 403 generated by the target current Itg and the magnetic field generated by the coil 411. The detection circuit 412 is positioned such that the directions of the two applied magnetic fields are opposite or nearly opposite to each other, and the direction of magnetic sensing is positioned so that it is parallel or nearly parallel to the directions of the two applied magnetic fields.

[0149] In this example, the component of the magnetic field generated by the target current Itg and applied to the detection circuit 412 in the direction of magnetization is the first magnetic field H1. The component of the magnetic field generated by coil 411 and applied to the detection circuit 412 in the direction of magnetization is the second magnetic field H2.

[0150] As mentioned above, the direction of the first magnetic field H1 and the direction of the second magnetic field H2 are parallel to the X direction. In this case, as shown in Figure 18, the detection circuit 412 is arranged such that the first magnetization direction is in the X direction and the second magnetization direction is in the -X direction. Note that the first and second magnetization directions may be slightly deviated from the above directions from the viewpoint of the accuracy of the fabrication of the MR element 450 and the accuracy of the alignment of the detection circuit 412. In addition, the magnetization of the magnetization fixed layer 52 may be configured to include a magnetization component whose main component is the first or second magnetization direction.

[0151] In the detection circuit 412, the potential difference between the signal output terminals E41 and E42 changes according to the strength of the target magnetic field. The difference detector 421 outputs a signal corresponding to the potential difference between the signal output terminals E41 and E42 as the magnetic field detection value S. Depending on the relative magnitudes of the first magnetic field H1 and the second magnetic field H2, the strength of the target magnetic field, the potential difference between the signal output terminals E41 and E42, and the magnetic field detection value S can be positive or negative.

[0152] Next, the structural features of the magnetic sensor 410 will be described with reference to Figure 16. The magnetic sensor 410 includes insulating layers 464, 465, and 466 arranged sequentially along the Z direction, a lower coil element 411L which is a metal layer, and an MR element 450 which is a sensor element.

[0153] The MR element 450, like the first MR element 50A in the first embodiment, includes at least a functional layer (a magnetization fixed layer 52 and a free layer 54). The functional layer is located on the opposite side of the insulating layer 465 in the insulating layer 466.

[0154] The lower coil element 411L is located on the opposite side of the insulating layer 465 in the insulating layer 464. The lower coil element 411L is part of the coil 411. The lower coil element 411L is formed of, for example, Cu, Au, or Al.

[0155] Each of the insulating layers 464 and 466 contains a first insulating material, similar to insulating layers 204 and 206 in the first embodiment. Insulating layer 465 contains a second insulating material, similar to insulating layer 205 in the first embodiment. The second insulating material is different from the first insulating material. Preferably, each of the insulating layers 464 and 466 is formed of the same first insulating material.

[0156] The insulating layer 465 includes a flat portion with a constant dimension in the Z direction. The functional layers (magnetized fixed layer 52 and free layer 54) are arranged along this flat portion. Furthermore, the maximum dimension of the insulating layer 465 in the Z direction may be greater than the maximum dimension of the insulating layer 464 and the maximum dimension of the insulating layer 466 in the Z direction.

[0157] The insulating layers 464, 465, and 466 correspond to the insulating layers 204, 205, and 206 in the first embodiment, the lower coil element 411L corresponds to the lower coil element 71 in the first embodiment, and the MR element 450 corresponds to the first MR element 50A in the first embodiment. For the same reasons explained in the first embodiment, according to this embodiment, it is possible to suppress the occurrence of cracks in the insulating layers 464, 465, and 466.

[0158] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0159] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the metal layer of the present invention is not limited to the lower coil element, but may be any wiring layer. Also, the magnetic detection element is not limited to an MR element, but may be an element that detects magnetic fields other than an MR element, such as a Hall element.

[0160] Furthermore, the second insulating material may be a spin-on glass material or a resin material such as polyimide. In this case, since the insulating layer containing the second insulating material is elastically deformable, the occurrence of cracks in the insulating layer can be suppressed.

[0161] Furthermore, the sensor element of the present invention is not limited to a magnetic detection element, but may be a sensor element configured to change its physical properties according to a predetermined physical quantity. The predetermined physical quantity is not limited to a magnetic field, but may include any quantity of the state of an object that can be detected by the sensor element, such as an electric field, temperature, displacement, and force. The above descriptions of each embodiment also apply to sensors other than magnetic sensors that are equipped with sensor elements other than magnetic detection elements, by replacing the magnetic detection element with a sensor element. In this case, the functional layer may be a part that constitutes at least a part of the sensor element and whose physical properties change according to a predetermined physical quantity. Also, in this case, the metal layer may be any wiring layer.

[0162] As described above, the sensor of the present invention is a sensor configured to detect a predetermined physical quantity. The sensor comprises a first insulating layer, a second insulating layer, and a third insulating layer arranged sequentially along a first direction, a metal layer located on the opposite side of the first insulating layer from the second insulating layer, and a sensor element configured to change its physical properties in accordance with a predetermined physical quantity. The sensor element includes a functional layer which constitutes at least a portion of the sensor element. The functional layer is located on the opposite side of the third insulating layer from the second insulating layer. Each of the first insulating layer and the third insulating layer contains a first insulating material. The second insulating layer contains a second insulating material.

[0163] In the sensor of the present invention, the second insulating layer may include a first portion and a second portion positioned differently from the first portion in a second direction perpendicular to the first direction. The maximum dimension of the second portion in the first direction may be greater than the maximum dimension of the first portion in the first direction. The second portion may have an inclined surface that is tilted with respect to the first direction. The functional layer may be arranged along the inclined surface. The metal layer may extend so as to intersect the boundary between the first portion and the second portion when viewed from the first direction.

[0164] Furthermore, in the sensor of the present invention, the second insulating layer may include a flat portion having a constant dimension in the first direction. The functional layer may be arranged along the flat portion.

[0165] Furthermore, in the sensor of the present invention, the second insulating material may have a greater fracture toughness value than the metal layer. The second insulating material may be SiO2.

[0166] Furthermore, in the sensor of the present invention, the second insulating material may be a resin material.

[0167] Furthermore, in the sensor of the present invention, the first insulating material may have a greater fracture toughness value than the second insulating material. In this case, the first insulating material may be Al2O3, and the second insulating material may be SiO2.

[0168] Furthermore, in the sensor of the present invention, the maximum dimension of the second insulating layer in the first direction may be larger than the maximum dimension of the first insulating layer in the first direction and the maximum dimension of the third insulating layer in the first direction.

[0169] Furthermore, in the sensor of the present invention, the predetermined physical quantity may be at least one of the direction and intensity of the target magnetic field, which is the magnetic field to be detected. The sensor element may be a magnetic detection element configured to detect changes in at least one of the direction and intensity of the target magnetic field. The magnetic detection element may be a magnetoresistive element. The functional layer may include a plurality of magnetic films.

[0170] Furthermore, in the sensor of the present invention, the metal layer may be part of the coil. The predetermined physical quantity may be an electric current flowing through a conductor. The coil may be configured to generate a second magnetic field to cancel out a first magnetic field generated by the electric current. The sensor element may be a magnetic detection element configured to detect the combined magnetic field of the first and second magnetic fields. [Explanation of Symbols]

[0171] 1…Magnetic sensor, 2…First chip, 3…Second chip, 4…Support, 6,7…Adhesive, 10…First detection circuit, 20…Second detection circuit, 30…Third detection circuit, 40…Processor, 50…MR element, 50A…First MR element, 50B…Second MR element, 50C…Third MR element, 51…Antiferromagnetic layer, 52…Magnetization fixed layer, 53…Gap layer, 54…Free layer, 61,61A,61B,61C…Lower electrode, 62,62A,62B,62C…Upper electrode 70...First coil, 71...Lower coil element, 72...Upper coil element, 80...Second coil, 81...Lower coil element, 82...Upper coil element, 100...Magnetic sensor device, 201...Substrate, 201a...Top surface, 202~210...Insulating layer, 301...Substrate, 301a...Top surface, 302~310...Insulating layer, 305C...Protruding part, 305D...Flat part, 320...Support member, 320a...First inclined surface, 320b...Second inclined surface, 320c...Convex surface, 320d...Flat surface.

Claims

1. A sensor configured to detect a predetermined physical quantity, A first insulating layer, a second insulating layer, and a third insulating layer are arranged in order along a first direction, A metal layer disposed on the opposite side of the first insulating layer from the second insulating layer, The system includes a sensor element configured to change its physical properties according to a predetermined physical quantity, The first insulating layer, the second insulating layer, and the third insulating layer are arranged so as to be sandwiched between the metal layer and the sensor element. The sensor element includes a functional layer that constitutes at least a part of the sensor element, The functional layer is located on the side of the third insulating layer opposite to the second insulating layer. Each of the first insulating layer and the third insulating layer comprises a first insulating material. The second insulating layer comprises a second insulating material different from the first insulating material. Each of the first insulating layer and the third insulating layer does not contain the second insulating material. The sensor is characterized in that the second insulating layer does not contain the first insulating material.

2. The second insulating layer includes a first portion and a second portion positioned differently from the first portion in a second direction perpendicular to the first direction. The second portion has an inclined surface that is inclined with respect to the first direction, The functional layer is arranged along the inclined surface, The sensor according to claim 1, characterized in that the maximum dimension of the second portion in the first direction is greater than the maximum dimension of the first portion in the first direction.

3. The sensor according to claim 2, characterized in that the metal layer extends such as to intersect the boundary between the first portion and the second portion when viewed from the first direction.

4. The sensor according to claim 1, characterized in that the second insulating layer includes a flat portion having a constant dimension in the first direction.

5. The sensor according to claim 4, characterized in that the functional layer is arranged along the flat portion.

6. The sensor according to claim 1, characterized in that the second insulating material has a greater fracture toughness value than the metal layer.

7. The second insulating material is SiO ２ The sensor according to claim 6, characterized in that it is the same as described above.

8. The sensor according to claim 1, characterized in that the second insulating material is a resin material.

9. The sensor according to claim 1, characterized in that the first insulating material has a greater fracture toughness value than the second insulating material.

10. The first insulating material is Al ２ O ３ And, The second insulating material is SiO ２ The sensor according to claim 9, characterized in that it is the same as the sensor according to claim 9.

11. The sensor according to claim 1, characterized in that the maximum dimension of the second insulating layer in the first direction is greater than the maximum dimension of the first insulating layer in the first direction and the maximum dimension of the third insulating layer in the first direction.

12. The predetermined physical quantity is at least one of the direction and intensity of the target magnetic field, which is the magnetic field to be detected. The sensor according to any one of claims 1 to 11, characterized in that the sensor element is a magnetic detection element configured to detect a change in at least one of the direction and intensity of the target magnetic field.

13. The magnetic detection element is a magnetoresistive element. The sensor according to claim 12, characterized in that the functional layer includes a plurality of magnetic films.

14. The sensor according to any one of claims 1 to 11, characterized in that the metal layer is part of a coil.

15. The aforementioned predetermined physical quantity is the current flowing through a conductor. The coil is configured to generate a second magnetic field to cancel out the first magnetic field generated by the current, The sensor according to claim 14, characterized in that the sensor element is a magnetic detection element configured to detect the combined magnetic field of the first magnetic field and the second magnetic field.

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