Processing apparatus and alignment method

Abstract

To provide a processing device and an alignment method that can facilitate the alignment of an end effector.SOLUTION: A processing device includes a processing container, a rotating arm, and a sensor. The processing container is configured so that multiple processing spaces are formed. The rotating arm has a rotational axis in the center part of the processing container, can rotate around the rotational axis, and is configured to have multiple end effectors that can hold wafers in the same number as the multiple processing spaces. The sensor is configured to detect the position of the end effector. In addition, at least one end effector of the multiple end effectors has the shape at a position corresponding to the sensor that is different from the shape at a position corresponding to the sensor of the other end effector.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present disclosure relates to a processing apparatus and an alignment method.

Background Art

[0002] In a substrate processing system, there is a processing container having a plurality of processing spaces located on the same circumference with the same center and each having a mounting table disposed therein, a plurality of holding portions capable of holding wafers to be mounted on each of the mounting tables of the plurality of processing spaces, a rotating arm provided rotatably about the center of the circumference as a rotation axis, and a sensor located between adjacent processing spaces and capable of detecting the position of a wafer held by the rotating arm during the rotation operation of the rotating arm. A processing module having these components is disclosed (Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a processing apparatus and an alignment method capable of easily aligning an end effector.

Means for Solving the Problems

[0005] An apparatus according to one aspect of the present disclosure comprises a processing vessel, a rotating arm, and a sensor. The processing vessel is configured to form a plurality of processing spaces. The rotating arm has a rotation axis located in the center of the processing vessel, is rotatable about the rotation axis, and is configured to have a plurality of end effectors capable of holding the same number of wafers as the plurality of processing spaces. The sensor is configured to detect the position of the end effectors. Furthermore, of the plurality of end effectors, at least one end effector has a shape where the position corresponding to the sensor is different from the shape where the position corresponding to the sensor is different from that of the other end effectors. [Effects of the Invention]

[0006] According to this disclosure, the alignment of the end effector can be easily performed. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic plan view showing an example of the configuration of a substrate processing system in one embodiment of the present disclosure. [Figure 2] Figure 2 is an exploded perspective view showing an example of the configuration of the substrate processing apparatus in this embodiment. [Figure 3] Figure 3 shows an example of the positional relationship between the processing space and the rotating arm in the standby position. [Figure 4] Figure 4 shows an example of the positional relationship between the processing space and the rotating arm at the wafer holding position. [Figure 5] Figure 5 shows an example of the wafer movement path within the substrate processing apparatus in this embodiment. [Figure 6] Figure 6 shows an example of the placement of sensors. [Figure 7] Figure 7 shows an example of the positional relationship between the sensor and each end effector. [Figure 8] Figure 8 shows an example of the difference in shape between the reference end effector and other end effectors, specifically the position corresponding to the sensor. [Figure 9]Figure 9 is a timing chart showing an example of signals detected by the sensor according to the rotation angle of the rotating arm. [Figure 10] Figure 10 shows an example of the reference position of the end effector. [Figure 11] Figure 11 shows an example of the rotation angle relative to the reference processing space. [Figure 12] Figure 12 shows an example of the exhaust path of the substrate processing apparatus in this embodiment. [Figure 13] Figure 13 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus in this embodiment. [Figure 14] Figure 14 is a flowchart showing an example of the alignment process for the rotating arm in this embodiment. [Modes for carrying out the invention]

[0008] Embodiments of the disclosed processing apparatus and alignment method will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] In processing equipment that processes multiple wafers simultaneously within a single processing container, multiple processing spaces are provided within the container, and different processing may be performed on the wafers in two or more of these processing spaces. In such cases, the processing equipment transports the wafers between the two or more processing spaces. In such processing equipment, a technique can be considered in which a rotating arm is provided within the processing container, and the substrate is transported between the two or more processing spaces by the rotating arm. In this case, it is necessary to align the rotation angle of the rotating arm, i.e., to teach it, so that a specific end effector of the rotating arm corresponds to a specific processing space. Conventionally, teaching was performed by visual inspection with the top of the processing container open. However, when the pitch in the X direction and the pitch in the Y direction of the multiple processing spaces are different, it is difficult to identify the end effector that serves as the reference for alignment and align the rotation angle of the rotating arm by visual inspection. Therefore, there is a need to easily align the end effectors.

[0010] [Configuration of the substrate processing system] Figure 1 is a schematic plan view showing an example of the configuration of a substrate processing system in one embodiment of the present disclosure. The substrate processing system 1 shown in Figure 1 includes an input / output port 11, an input / output module 12, vacuum transport modules 13a and 13b, and substrate processing devices 2, 2a and 2b. In Figure 1, the X direction is the left-right direction, the Y direction is the front-back direction, the Z direction is the up-down direction (height direction), and the input / output port 11 is described as being on the front side in the front-back direction. The input / output port 11 is connected to the front side of the input / output module 12, and the vacuum transport module 13a is connected to the rear side of the input / output module 12, both facing each other in the front-back direction.

[0011] On the loading / unloading port 11, a carrier which is a transport container housing a substrate to be processed is placed. The substrate is a wafer W which is a circular substrate having a diameter of, for example, 300 mm. The loading / unloading module 12 is a module for loading / unloading the wafer W between the carrier and the vacuum transfer module 13a. The loading / unloading module 12 includes a normal pressure transfer chamber 121 that transfers the wafer W to and from the carrier in a normal pressure atmosphere by a transfer mechanism 120, and a load lock chamber 122 that switches the atmosphere in which the wafer W is placed between a normal pressure atmosphere and a vacuum atmosphere.

[0012] The vacuum transfer modules 13a and 13b each have a vacuum transfer chamber 14a and 14b in which a vacuum atmosphere is formed. Inside the vacuum transfer chambers 14a and 14b, substrate transfer mechanisms 15a and 15b are respectively arranged. Between the vacuum transfer module 13a and the vacuum transfer module 13b, a path 16 for transferring the wafer W between the vacuum transfer modules 13a and 13b is arranged. The vacuum transfer chambers 14a and 14b are each formed in a rectangular shape, for example, in a plan view. Among the four side walls of the vacuum transfer chamber 14a, substrate processing apparatuses 2 and 2b are respectively connected to the sides facing each other in the left-right direction. Among the four side walls of the vacuum transfer chamber 14b, substrate processing apparatuses 2a and 2b are respectively connected to the sides facing each other in the left-right direction.

[0013] In addition, among the four side walls of the vacuum transfer chamber 14a, the load lock chamber 122 installed in the loading / unloading module 12 is connected to the front side. Gate valves G are arranged between the normal pressure transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer module 13a, and between the vacuum transfer modules 13a and 13b and the substrate processing apparatuses 2, 2a, and 2b. The gate valves G open and close the loading / unloading ports of the wafer W provided in the modules connected to each other.

[0014] The substrate transfer mechanism 15a transfers the wafer W between the loading / unloading module 12, the substrate processing apparatuses 2 and 2b, and the path 16 in a vacuum atmosphere. Also, the substrate transfer mechanism 15b transfers the wafer W between the path 16 and the substrate processing apparatuses 2a and 2b in a vacuum atmosphere. The substrate transfer mechanisms 15a and 15b are composed of articulated arms and have substrate holding parts for holding the wafer W. The substrate processing apparatuses 2, 2a, and 2b perform substrate processing using a processing gas on a plurality of (for example, two or four) wafers W in a vacuum atmosphere. Therefore, the substrate holding parts of the substrate transfer mechanisms 15a and 15b are configured to be able to hold, for example, two wafers W simultaneously so as to deliver two wafers W to the substrate processing apparatuses 2, 2a, and 2b in a batch. Note that the substrate processing apparatuses 2 and 2a can transfer the wafer W received on the mounting table on the vacuum transfer modules 13a and 13b side to the mounting table on the back side by means of a rotating arm provided inside. Also, the substrate processing apparatuses 2 and 2a can detect the position of the wafer W when the wafer W is transferred by the rotating arm by means of a sensor provided inside.

[0015] Also, since the Y-direction pitch (row interval) of the mounting tables of the substrate processing apparatuses 2, 2a, and 2b is common at a pitch Py, they can be connected to any location on either side facing each other in the left-right direction of the vacuum transfer modules 13a and 13b. In the example of FIG. 1, the substrate processing apparatus 2 and the substrate processing apparatus 2b are connected to the vacuum transfer module 13a, and the substrate processing apparatus 2a and the substrate processing apparatus 2b are connected to the vacuum transfer module 13b. Note that the substrate processing apparatus 2 and the substrate processing apparatus 2a are substrate processing apparatuses in which the diameter of the reactor (processing container) including the processing space corresponding to one mounting table is different according to the process application, and the pitches Px1 and Px2 which are the X-direction pitch (column interval) of the mounting table are different. Also, for the substrate processing apparatus 2a, the pitch Px2 is the same value as the pitch Py. That is, the pitch Py corresponds to the size of the largest reactor. That is, since the size of the reactor of the substrate processing apparatus 2 is smaller than that of the substrate processing apparatus 2a, the pitch Px1 can be made smaller than the pitch Px2.

[0016] Furthermore, the substrate processing apparatus 2b is a type of substrate processing apparatus that has two mounting tables. It does not transport wafers within the substrate processing apparatus 2b, but rather loads and processes two wafers simultaneously and unloads them simultaneously.

[0017] The PCB processing system 1 has a control unit 8. The control unit 8 is a computer equipped with, for example, a processor, a memory unit, an input device, a display device, etc. The control unit 8 controls each part of the PCB processing system 1. The control unit 8 allows an operator to input commands and perform other operations to manage the PCB processing system 1 using the input device. The control unit 8 can also visualize and display the operating status of the PCB processing system 1 using the display device. Furthermore, the memory unit of the control unit 8 stores control programs for controlling various processes performed by the PCB processing system 1 using the processor, as well as recipe data, etc. The processor of the control unit 8 executes the control programs and controls each part of the PCB processing system 1 according to the recipe data, thereby executing the desired PCB processing in the PCB processing system 1.

[0018] [Configuration of substrate processing apparatus] Next, using Figures 2 to 13, we will describe an example in which the substrate processing apparatus 2 and 2a are applied to a film deposition apparatus that performs plasma CVD (Chemical Vapor Deposition) processing on a wafer W. Figure 2 is an exploded perspective view showing an example of the configuration of the substrate processing apparatus in this embodiment. The internal configuration of the substrate processing apparatus 2a is basically the same as that of the substrate processing apparatus 2, except for the fact that the pitch Px2 is different from the pitch Px1, and the placement of the sensor capable of detecting the position of the wafer W. For this reason, in the following, we will omit explanations of the substrate processing apparatus 2a that overlap with those of the substrate processing apparatus 2, and will use the substrate processing apparatus 2 as a representative example. The substrate processing apparatus 2 and 2a are examples of processing modules.

[0019] As shown in Figure 2, the substrate processing apparatus 2 is equipped with a rectangular processing container (vacuum container) 20 in plan view. The processing container 20 is configured to maintain a vacuum atmosphere inside. The processing container 20 is configured by closing the open part on the top surface with a gas supply unit 4 and a manifold 36, which will be described later. Note that in Figure 2, internal partitions and the like are omitted to make the relationship between the processing spaces S1 to S4 and the rotating arm 3 easier to understand. On the side of the processing container 20 that is connected to the vacuum transport chamber 14a or 14b, two loading / unloading ports 21 are formed so as to be aligned in the Y direction. The loading / unloading ports 21 are opened and closed by gate valves G.

[0020] Multiple processing spaces S1 to S4 are provided inside the processing container 20. A mounting table 22 is placed in each of the processing spaces S1 to S4. The mounting table 22 is movable in the vertical direction, moving to the upper position when processing the wafer W and moving to the lower position when transporting the wafer W. Below the processing spaces S1 to S4, a transport space T is provided, connecting the processing spaces S1 to S4, and the wafer W is transported by a rotating arm 3. Furthermore, the transport space T below the processing spaces S1 and S2 is connected to the respective input / output ports 21, and the wafer W is loaded and unloaded between it and the vacuum transport chambers 14a and 14b by substrate transport mechanisms 15a and 15b.

[0021] Multiple processing spaces S1 to S4 are each located at the same circumference C. The center of circumference C coincides with the center of the substrate processing apparatus 2, that is, the center of the processing container 20. In other words, when viewed from above, the multiple processing spaces S1 to S4 are arranged on a circumference C whose center coincides with the center of the processing container 20.

[0022] Each mounting platform 22 in processing spaces S1 to S4 is laid out in a 2x2 configuration when viewed from above. In this layout, the row spacing and column spacing are of different dimensions. That is, when comparing the pitch Py of the Y-direction pitch (row spacing) of the mounting platform 22 with the pitch Px1 of the X-direction pitch (column spacing), pitch Py > pitch Px1.

[0023] Figure 3 shows an example of the positional relationship between the processing space and the rotating arm in the standby position. Figure 4 shows an example of the positional relationship between the processing space and the rotating arm in the wafer holding position. As shown in Figures 3 and 4, the rotating arm 3 has four end effectors 32 capable of holding wafers W placed on each of the mounting tables 22, and a base member 33 whose axis of rotation is located at the center of the circumference C, and is rotatable about the center of the circumference C as the axis of rotation. The four end effectors 32 are connected to the base member 33 in an X shape. In the wafer holding position shown in Figure 4, the X shape of the rotating arm 3 has a configuration in which the dimension in the Y direction corresponding to the row spacing of the X shape and the dimension in the X direction corresponding to the column spacing are different.

[0024] In other words, the end effectors 32 are provided in two sets, with two end effectors facing each other around the axis of rotation, and the spacing between adjacent end effectors 32 is different in the front-to-back direction of rotation (Y-direction dimension and X-direction dimension). In contrast, the substrate processing apparatus 2a is provided in two sets, with two end effectors facing each other around the axis of rotation, and the spacing between adjacent end effectors 32 is the same in the front-to-back direction of rotation (Y-direction dimension and X-direction dimension).

[0025] The rotating arm 3 is positioned between each of the processing spaces S1 to S4 in the standby position shown in Figure 3, so as not to obstruct the vertical movement of each mounting table 22. In Figure 3, wafers W are placed on each mounting table 22. The movement of the rotating arm 3 will be described when, for example, wafers W in the first and second rows are transported to swap positions, that is, when wafers W in processing spaces S1 and S2 are transported to processing spaces S3 and S4, and wafers W in processing spaces S3 and S4 are transported to processing spaces S1 and S2.

[0026] First, each mounting platform 22 is moved to the transfer position in the lower transport space T, and the lift pins 26 provided on each mounting platform 22 (described later) are raised to lift the wafer W. Next, the rotating arm 3 is rotated clockwise by approximately 30° to insert each end effector 32 between the mounting platform 22 and the wafer W, as shown in Figure 4. Subsequently, the lift pins 26 are lowered to place the wafer W on each end effector 32. Next, the rotating arm 3 is rotated clockwise by 180° to transport the wafer W to the holding position on each mounting platform 22. Once each mounting platform 22 raises its lift pins 26 to receive the wafer W, the rotating arm 3 is rotated counterclockwise by approximately 30° to move to the standby position. In this way, the rotating arm 3 can be used to transport wafers W in a manner that swaps the first and second rows. This allows the wafer W to be transported between processing spaces S1, S2 and S3, S4 by the rotating arm 3, for example, when different processes (e.g., film deposition and annealing) are performed in processing spaces S1, S2 and S3, S4. Therefore, in cases where different processes are repeated in processing spaces S1, S2 and S3, S4 (e.g., repeated film deposition and annealing), the time required for transporting the wafer W can be reduced.

[0027] Figure 5 shows an example of a wafer movement path within the substrate processing apparatus in this embodiment. Figure 5 describes the movement path when a wafer W is transported from the vacuum transport chamber 14a into the interior of the substrate processing apparatus 2. First, the substrate transport mechanism 15a of the vacuum transport chamber 14a loads two wafers W simultaneously onto each loading platform 22 at the transfer position in the transport space T located below the processing spaces S1 and S2 corresponding to the loading platforms 22 in the same row, as shown by path F1. Each loading platform 22 in processing spaces S1 and S2 raises its lift pin 26 to receive the wafers W.

[0028] Next, the rotating arm 3 is rotated approximately 30° clockwise from its standby position to insert the end effector 32 between the mounting table 22 and the wafer W at the transfer position in the lower part of the processing spaces S1 and S2, and the lift pin 26 is lowered to place the wafer W on each end effector 32. Once the wafer W is placed, the rotating arm 3 is rotated 180° clockwise as shown in path F2 to transport the wafer W onto the mounting table 22 (the holding position of the rotating arm 3) at the transfer position in the transport space T in the lower part of the processing spaces S3 and S4. When the mounting table 22 at the transfer position in the lower part of the processing spaces S3 and S4 raises the lift pin 26 to receive the wafer W, the rotating arm 3 is rotated approximately 30° counterclockwise to move to the standby position. In this state, the mounting tables 22 in the processing spaces S1 and S2 do not have wafer W on them, while the mounting tables 22 in the processing spaces S3 and S4 have wafer W on them. Next, the substrate transport mechanism 15a in the vacuum transport chamber 14a simultaneously transports two wafers W to each mounting table 22 at the transfer position at the bottom of the processing spaces S1 and S2, as shown by the path F1, and places the wafers W on the mounting tables 22 in the processing spaces S1 and S2. As a result, wafers W are placed on all the mounting tables 22 in the processing spaces S1 to S4.

[0029] Similarly, during unloading, first, the wafer W placed on the mounting table 22 at the lower transfer position of processing spaces S1 and S2 is unloaded to the vacuum transport chamber 14a by the substrate transport mechanism 15a. Next, the wafer W placed on the mounting table 22 at the lower transfer position of processing spaces S3 and S4 is transported to the mounting table 22 at the lower transfer position of processing spaces S1 and S2 by the rotating arm 3. Subsequently, the wafer W placed on the mounting table 22 at the lower transfer position of processing spaces S1 and S2 is unloaded to the vacuum transport chamber 14a by the substrate transport mechanism 15a. In this way, by using the substrate transport mechanism 15a, which can load and unload two wafers W simultaneously, and the rotating arm 3, wafers W can be loaded into and unloaded from processing spaces S1 to S4.

[0030] Incidentally, when the wafer W is transported by the rotating arm 3 within the processing container 20, the position of the wafer W may shift from a predetermined reference position (for example, the center position of the processing space S1 to S4) due to positional displacement during wafer transfer or vibration of the rotating arm 3. Positional displacement of the wafer W is a factor that reduces the uniformity of processing in the processing space S1 to S4.

[0031] Therefore, the substrate processing apparatus 2 detects the position of the wafer W when the wafer W is transported by the rotating arm 3. Specifically, the substrate processing apparatus 2 is located between adjacent processing spaces S1 to S4 and has sensors capable of detecting the position of the wafer W held by the rotating arm 3 when the rotating arm 3 is rotating. In the example in Figure 5, the substrate processing apparatus 2 has sensors 31a and 31b between adjacent processing spaces S1 and S2, and between adjacent processing spaces S3 and S4, respectively.

[0032] Sensors 31a and 31b are each, for example, pairs of two unit sensors, and are arranged on a straight line in the X direction passing through the center of the substrate processing apparatus 2 (processing container 20), that is, the center of the circumference C. The two unit sensors of sensors 31a and 31b are positioned on a straight line in the X direction passing through the center of the circumference C, with the arc of the circumference C in between them. This is to reduce detection errors due to changes in the positional relationship of the two unit sensors during thermal expansion, by making the direction of expansion due to thermal expansion of the processing container 20 the same as the direction of alignment of the two unit sensors of sensors 31a and 31b. For example, optical sensors or millimeter-wave sensors can be used as the two unit sensors of sensors 31a and 31b.

[0033] Note that the placement positions of sensors 31a and 31b are not limited to the X direction, as long as they lie on a straight line passing through the center of the substrate processing apparatus 2. Furthermore, in a substrate processing apparatus 2a where the Y-direction pitch (row spacing) Py and the X-direction pitch (column spacing) Px2 of the mounting table 22 are the same, sensors may be placed on a straight line in the X direction and a straight line in the Y direction passing through the center of the substrate processing apparatus 2a. Figure 6 shows an example of the placement positions of the sensors. The substrate processing apparatus 2a shown in Figure 6 has sensors 31a to 31d between adjacent processing spaces S1 and S2, between adjacent processing spaces S3 and S4, between adjacent processing spaces S2 and S3, and between adjacent processing spaces S4 and S1, respectively. Sensors 31a and 31b are placed on a straight line in the X direction passing through the center of the substrate processing apparatus 2a (processing container 20), that is, the center of the circumference C. Sensors 31c and 31d are placed on a straight line in the Y direction passing through the center of the circumference C. This is done to reduce detection errors caused by changes in the relative positions of the two unit sensors during thermal expansion, by making the direction of expansion of the processing container 20 due to thermal expansion the same as the direction of alignment of the two unit sensors 31a to 31d.

[0034] Returning to the explanation of Figure 5, the substrate processing apparatus 2 can detect the amount of misalignment of the wafer W in the processing space S1 to S4 of the transport destination by detecting the position of the wafer W with sensors 31a and 31b. For example, the substrate processing apparatus 2 calculates the amount of misalignment of the wafer W based on the front and rear edge positions of the wafer W detected by sensors 31a and 31b and the output result (rotation angle of the wafer W) of an encoder (not shown) provided on the rotating arm 3. The amount of misalignment of the wafer W can be calculated, for example, using a mathematical model that can calculate the amount of misalignment from the front and rear edge positions of the wafer W and the rotation angle of the wafer W.

[0035] In the example in Figure 5, position P24 indicates the state when the rear edge of the wafer W passes the sensor 31b during transport from processing space S2 to S4, and position P42 indicates the state when the rear edge of the wafer W passes the sensor 31a during transport from processing space S4 to S2. For example, when the rear edge of the wafer W passes the sensor 31b, the substrate processing apparatus 2 calculates the amount of displacement of the wafer W in the destination processing space S4 from the position of the rear edge of the wafer W detected by the sensor 31b and the output result of the encoder. Alternatively, for example, when the front edge of the wafer W passes the sensor 31b, the substrate processing apparatus 2 may calculate the amount of displacement of the wafer W in the destination processing space S4 from the position of the front edge of the wafer W detected by the sensor 31b and the output result of the encoder. Alternatively, for example, the substrate processing apparatus 2 may calculate the average value of the amount of displacement of the wafer W detected when the rear edge of the wafer W passes the sensor 31b and the amount of displacement of the wafer W detected when the front edge of the wafer W passes the sensor 31b.

[0036] Furthermore, when the wafer W is transported by the rotating arm 3, the substrate processing apparatus 2 can correct the misalignment of the wafer W by moving the mounting table 22 in the processing space S1 to S4 at the destination at least within the XY plane, according to the amount of misalignment of the wafer W detected. Specifically, the substrate processing apparatus 2 has an adjustment mechanism 700 that can adjust the position of the mounting table 22, and can correct the misalignment of the wafer W by controlling the adjustment mechanism 700 to move the mounting table 22 according to the amount of misalignment detected. In other words, the substrate processing apparatus 2 adjusts the misalignment so that when the mounting table 22 is raised, the wafer W is positioned in the center of the processing space S1 to S4.

[0037] The adjustment mechanism 700 and sensors 31a and 31b are fixed to the outer surface of the bottom 27 (see Figure 13) of the processing container 20. This is to suppress changes in the positional relationship between the adjustment mechanism 700 and sensors 31a and 31b due to thermal expansion of the processing container 20, by fixing the adjustment mechanism 700 and sensors 31a and 31b to the processing container 20, which is a common component.

[0038] Next, the alignment (teaching) of the end effectors 32 will be explained. Figure 7 shows an example of the positional relationship between the sensor position and each end effector. In Figures 7 to 11, the end effectors 32 of the rotating arm 3 may be distinguished as end effector 32a, which is used as a reference when used for alignment, and end effectors 32b, which are the others. In Figure 7, as in Figure 4, each end effector 32 is shown in a standby position between the mounting tables 22. Furthermore, in Figures 7 to 11, the case in which the end effector 32a is aligned to the wafer W transfer position in the processing space S4 will be explained as an example.

[0039] As described above, sensors 31a and 31b are sensors that detect the position of the wafer W, but when aligning the end effector 32, they are used as sensors that detect the position of the end effector 32a. As shown in Figure 7, sensors 31a and 31b each consist of sensors 31a1 and 31a2 and sensors 31b1 and 31b2 that form a pair. Sensors 31a1 and 31b1 are inner circumference sensors and are examples of first sensors. Sensors 31a2 and 31b2 are outer circumference sensors and are examples of second sensors. When performing alignment, sensors 31a1 and 31b1 detect the width including the protrusions 32a1 provided at positions corresponding to sensors 31a1 and 31b1 on the end effector 32a. Note that the protrusions 32a1 are examples of different shapes. The protrusion 32a1 can have any shape in which the width of the end effector 32a differs between the center and other parts such as the hypotenuse, such as a triangular, trapezoidal, or semicircular shape. In the following description, the case in which the end effector 32a is aligned using sensors 31b1 and 31b2 is described, but the rotating arm 3 may also be rotated 180° and the alignment with respect to the processing space S2 may be performed using sensors 31a1 and 31a2. Furthermore, for the four end effectors 32, shapes may be provided at positions corresponding to each sensor 31a1 and 31b1 such that the signals detected by sensors 31a1 and 31b1 are different.

[0040] Figure 8 shows an example of the difference in shape between the reference end effector and other end effectors at the position corresponding to the sensor. As shown in Figure 8, the end effector 32a has a protrusion 32a1 at the position corresponding to the sensor 31b1, and the width of this position is wider. On the other hand, the end effector 32b does not have a part corresponding to the protrusion 32a1 at the position corresponding to the sensor 31b1, and the front and rear positions and width in the length direction are almost the same. The top of the protrusion 32a1 of the end effector 32a is at a position that aligns with the sensor 31b1 at room temperature, and in this case, the signal detected by the sensor 31b1 is the signal corresponding to width 32c. On the other hand, at the position of the end effector 32b corresponding to the sensor 31b1, the signal detected by the sensor 31b1 at room temperature is the signal corresponding to width 32d.

[0041] Figure 9 is a timing chart showing an example of a signal detected by the sensor according to the rotation angle of the rotating arm. The timing chart 37 shown in Figure 9 shows the signal level of the signal detected by the sensor 31b1 when the rotating arm 3 is rotated 360°. In timing chart 37, the rotation speed of the rotating arm 3 is kept constant. In timing chart 37, the detection of end effectors 32a and 32b is represented by positive logic, where H is used and non-detection is used, but negative logic may also be used. The sensor 31b1 detects a signal 32c2 corresponding to the width 32c of the end effector 32a and a signal 32d2 corresponding to the width 32d of the end effector 32b, according to the rotation angle of the rotating arm 3. In the example of timing chart 37, the detection time of H for signal 32c2 is longer (larger rotation angle) than for signal 32d2, so the end effector 32a can be identified. In other words, the control unit 8 can identify the end effector 32a because the detected signal differs depending on the presence or absence of the protrusion 32a1.

[0042] Returning to the explanation of Figure 8, let's describe the case when the temperature inside the processing container 20 rises. When the temperature rises, the processing container 20 expands uniformly from the center outwards, so the sensor 31b1 fixed to the processing container 20 also moves outwards. For convenience, the sensor 31b1 that has moved during the temperature rise will be referred to as sensor 31b3. The end effector 32a is made of a material (for example, alumina) with a significantly lower expansion rate than the processing container 20, and is held so as to be rotatable within the processing container 20 with the center of the circumference C as the axis of rotation, so its positional relationship with the sensor 31b3 fixed to the processing container 20 changes. Therefore, the protrusion 32a1 of the end effector 32a is positioned so that the hypotenuse forming the protrusion 32a1 corresponds to the sensor 31b3. In this case, the signal detected by sensor 31b3 corresponds to the signal with width 32c1. Similarly, the positional relationship of the end effector 32b with sensor 31b3 also changes, and the signal detected by sensor 31b3 corresponds to the signal with width 32d1. Even during temperature rise, the detection times for the signal corresponding to width 32c1 and the signal corresponding to width 32d1 are different, allowing the end effector 32a to be identified.

[0043] Furthermore, the control unit 8 can detect the expansion rate of the processing container 20 by comparing the signal corresponding to the width 32c at room temperature with the signal corresponding to the width 32c1 when the temperature is raised, and can reflect the detected expansion rate in the wafer transport accuracy of the wafer W. For example, the control unit 8 can use the expansion rate to align the center of the wafer W with the center of the mounting table 22 by moving the mounting table 22 according to the detected expansion rate. Note that the position of the tip 32a2 of the end effector 32a changes in the longitudinal direction relative to the sensor 31b2 that moves when the temperature is raised, but the position of the rotating arm 3 with respect to the rotation direction does not change. That is, sensor 31b1 detects the end effector 32 and detects thermal expansion, and sensor 31b2 detects the position of the end effector 32 in the rotation direction.

[0044] Next, the reference position for the rotation direction of the end effector 32a will be explained. Figure 10 shows an example of the reference position of the end effector. In Figure 10, the rotating arm 3 is rotated clockwise by slightly less than one rotation from the standby position, and the tip 32a2 of the end effector 32a is approaching the sensor 31b2. The control unit 8 latches (stores) the output result (rotation angle) of an encoder (not shown) provided on the rotating arm 3 when the tip 32a2 of the end effector 32a is detected by the sensor 31b2. In the example in Figure 10, the line 38 passing through sensors 31b1 and 31b2 from the center of the rotating arm 3 at this time (center of circumference C in Figure 7) is set as the reference position for the rotation angle of the end effector 32a. In other words, the control unit 8 determines the reference position of the end effector 32a based on the tip portion 32a2 of the end effector 32a detected by the sensor 31b2 and the output result (rotation angle) of an encoder (not shown) provided on the rotating arm 3. In this embodiment, angle α is defined as the angle between line 38 and the central axis of the end effector 32a at the reference position. Angle α is an angle predetermined based on the shape of the end effector 32a and is stored in the control unit 8 in advance.

[0045] Figure 11 shows an example of a rotation angle relative to the reference processing space. Figure 11 shows the end effector 32a rotated clockwise by an angle γ from the reference position line 38 to the wafer W transfer position between it and the mounting table 22 in the processing space S4. The angle β between the central axis of the end effector 32a and the reference position line 38 at this time is an angle predetermined based on the arrangement of the processing space S4 in the processing container 20 and is stored in the control unit 8 in advance. In other words, the control unit 8 can move the end effector 32a to the wafer W transfer position between it and the mounting table 22 in the processing space S4 by rotating it clockwise by an angle α + angle β after the tip portion 32a2 is detected by the sensor 31b2. Alternatively, the control unit 8 may rotate the end effector 32a clockwise by an angle γ after the tip portion 32a2 is detected by the sensor 31b2. In this case as well, the control unit 8 can move the end effector 32a to the wafer transfer position between it and the mounting table 22 in the processing space S4. Furthermore, since the end effectors 32a and 32b are assembled to the base member 33 with high precision, once the alignment of the end effector 32a is completed in the processing space S4, the alignment of the other end effectors 32b with respect to the processing spaces S1 to S3 is also completed. In addition, at the transfer position in the processing spaces S1 to S4, the end effectors 32a and 32b are in a positional relationship that prevents interference between them and the lift pin 26.

[0046] Furthermore, the control unit 8 may use sensors 31a and 31b to confirm the position of each end effector 32 even during actual process processing after the alignment is complete. The control unit 8 may also rotate the rotating arm 3 360° at any timing and use sensors 31a and 31b to confirm the position of each end effector 32. For example, based on the confirmation results, the control unit 8 may reflect thermal expansion in the wafer transport accuracy, or detect damage to an end effector 32 if an end effector 32 that should be detected is not detected.

[0047] Furthermore, the control unit 8 can diagnose and predict wear and deterioration of the drive system of the rotating arm 3 (such as the two-axis vacuum seal 34 described later) by comparing the encoder output result when the tip portion 32a2 is detected by the sensor 31b2 with the encoder output result during alignment. For example, if the encoder output result is a larger value than the encoder output result during alignment, the control unit 8 can diagnose that wear on the drive parts, such as deterioration of gears and timing belts, or loosening of screws on the mounting parts has occurred. Also, for example, if the encoder output result is a smaller value than the encoder output result during alignment, the control unit 8 can diagnose that an increase in deposit on the end effector 32 or loosening of screws on the mounting parts has occurred.

[0048] Additionally, if sensors 31a and 31b are optical sensors, when deposits accumulate inside the processing container 20, deposits also adhere to the transmission window, causing a decrease in light intensity. Therefore, the control unit 8 can use this reduced light intensity as an indicator of when cleaning is needed inside the processing container 20. Furthermore, when the light intensity of sensors 31a and 31b decreases, the response time of sensors 31a and 31b slows down. Therefore, the control unit 8 can similarly use the encoder output results as an indicator of when cleaning is needed by comparing them with the encoder output results during alignment.

[0049] Figure 12 shows an example of the exhaust path of the substrate processing apparatus in this embodiment. Figure 12 shows the processing container 20 viewed from above with the gas supply unit 4, which will be described later, removed. As shown in Figure 12, a manifold 36 is positioned at the center of the substrate processing apparatus 2. The manifold 36 has a plurality of exhaust passages 361 connected to processing spaces S1 to S4. Each exhaust passage 361 is connected to a hole 351 of a thrust nut 35, which will be described later, at the lower center of the manifold 36. Each exhaust passage 361 is connected to an annular flow path 363 in each guide member 362 provided at the top of the processing spaces S1 to S4. In other words, the gas in the processing spaces S1 to S4 is exhausted to the combined exhaust port 205, which will be described later, via the flow path 363, exhaust passages 361, and holes 351.

[0050] Figure 13 is a schematic cross-sectional view showing an example of the configuration of the substrate processing apparatus in this embodiment. The cross-section in Figure 13 corresponds to the cross-section along line AA of the substrate processing apparatus 2 shown in Figure 12. The four processing spaces S1 to S4 are configured similarly to each other and are formed between a mounting table 22 on which the wafer W is placed and a gas supply unit 4 positioned opposite the mounting table 22. In other words, within the processing container 20, a mounting table 22 and a gas supply unit 4 are provided for each of the four processing spaces S1 to S4. Figure 13 shows processing spaces S1 and S3. The following explanation will use processing space S1 as an example.

[0051] The mounting base 22 also serves as the lower electrode and is formed in a flat cylindrical shape, for example, from metal or aluminum nitride (AlN) with embedded metal mesh electrodes. The mounting base 22 is supported from below by a support member 23. The support member 23 is formed in a cylindrical shape, extends vertically downward, and penetrates the bottom 27 of the processing container 20. The lower end of the support member 23 is located outside the processing container 20 and is connected to a rotary drive mechanism 600. The support member 23 is rotated by the rotary drive mechanism 600. The mounting base 22 is configured to rotate in accordance with the rotation of the support member 23. An adjustment mechanism 700 for adjusting the position and inclination of the mounting base 22 is also provided at the lower end of the support member 23. The adjustment mechanism 700 is fixed to the outer surface of the bottom 27 of the processing container 20 together with sensors 31a and 31b (see Figure 5).

[0052] The mounting table 22 is configured to be able to move up and down between the processing position and the transfer position via the support member 23 by the adjustment mechanism 700. In Figure 13, the mounting table 22 at the transfer position is shown with a solid line, and the mounting table 22 at the processing position is shown with a dashed line. The transfer position shows the state in which the end effector 32 of the rotating arm 3 is inserted between the mounting table 22 and the wafer W, and the wafer W is received from the lift pin 26. The processing position is the position when substrate processing (e.g., film deposition) is performed, and the transfer position is the position in which the wafer W is transferred between the substrate transport mechanism 15a or the end effector 32. The movement path of the wafer W held by the rotating arm 3 (e.g., path F2 in Figure 5) is located closer to the bottom 27 of the processing container 20 than to the processing position. As a result, when the wafer W is transported by the rotating arm 3, the wafer W can be brought closer to the sensors 31a and 31b located on the outer surface of the bottom 27 of the processing container 20, thereby improving the detection accuracy of the sensors 31a and 31b.

[0053] A heater 24 is embedded in the mounting base 22. The heater 24 heats each wafer W placed on the mounting base 22 to, for example, 60°C to 600°C. The mounting base 22 is also connected to ground potential.

[0054] Furthermore, the mounting base 22 is provided with multiple (for example, three) pin through holes 26a, and a lift pin 26 is positioned inside each of these pin through holes 26a. The pin through holes 26a are provided to penetrate from the mounting surface (top surface) of the mounting base 22 to the back surface (bottom surface) relative to the mounting surface. The lift pin 26 is slidably inserted into the pin through holes 26a. The upper end of the lift pin 26 is suspended from the mounting surface side of the pin through holes 26a. That is, the upper end of the lift pin 26 has a larger diameter than the pin through hole 26a, and a recess is formed at the upper end of the pin through hole 26a that is larger in diameter and thickness than the upper end of the lift pin 26 and capable of accommodating the upper end of the lift pin 26. As a result, the upper end of the lift pin 26 is locked to the mounting base 22 and suspended from the mounting surface side of the pin through hole 26a. Furthermore, the lower end of the lift pin 26 protrudes from the underside of the mounting base 22 toward the bottom 27 of the processing container 20.

[0055] When the mounting table 22 is raised to the processing position, the upper end of the lift pin 26 is housed in the recess on the mounting side of the pin through hole 26a. When the mounting table 22 is lowered from this position to the transfer position, the lower end of the lift pin 26 contacts the bottom 27 of the processing container 20, and the lift pin 26 moves within the pin through hole 26a, causing the upper end of the lift pin 26 to protrude from the mounting surface of the mounting table 22, as shown in Figure 13. In this case, the lower end of the lift pin 26 may contact something such as a lift pin contact member located on the bottom side of the processing container 20, rather than the bottom 27.

[0056] The gas supply unit 4 is provided on the ceiling of the processing container 20, above the mounting base 22, via a guide member 362 made of an insulating material. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 has a lid 42, a shower plate 43 that forms an opposing surface facing the mounting surface of the mounting base 22, and a gas passage chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and gas discharge holes 45 penetrating in the thickness direction are arranged, for example, vertically and horizontally in the shower plate 43, so that gas is discharged in a shower-like manner toward the mounting base 22.

[0057] Each gas supply unit 4 is connected to the gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, supply sources for reaction gases (film-forming gases) which are process gases, purge gases, and cleaning gases, as well as piping, valves V, flow rate adjustment units M, etc. The gas supply system 50 includes, for example, a cleaning gas supply source 53, a reaction gas supply source 54, a purge gas supply source 55, valves V1 to V3 provided in the piping of each supply source, and flow rate adjustment units M1 to M3.

[0058] The cleaning gas supply source 53 is connected to the cleaning gas supply path 532 via the flow rate adjustment unit M1, valve V1, and remote plasma unit (RPU) 531. The cleaning gas supply path 532 branches into four systems downstream of the RPU 531, each connected to the gas supply pipe 51. Valves V11 to V14 are provided for each branched pipe downstream of the RPU 531, and the corresponding valves V11 to V14 are opened during cleaning. Note that in Figure 13, only valves V11 and V14 are shown for convenience.

[0059] The reaction gas supply source 54 and the purge gas supply source 55 are connected to the gas supply passage 52 via flow rate adjustment units M2 and M3 and valves V2 and V3, respectively. The gas supply passage 52 is connected to the gas supply pipe 51 via the gas supply pipe 510. In Figure 13, the gas supply passage 52 and gas supply pipe 510 are shown collectively as the supply passages and supply pipes corresponding to each gas supply unit 4.

[0060] A high-frequency power supply 41 is connected to the shower plate 43 via a matching unit 40. The shower plate 43 functions as an upper electrode facing the mounting base 22. When high-frequency power is applied between the shower plate 43, which is the upper electrode, and the mounting base 22, which is the lower electrode, the gas (reaction gas in this example) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.

[0061] Next, the exhaust path from the processing spaces S1 to S4 to the combined exhaust port 205 will be described. As shown in Figures 12 and 13, the exhaust path proceeds from the annular flow path 363 in each guide member 362 provided in the upper part of the processing spaces S1 to S4, through each exhaust passage 361, through the confluence section and hole 351 at the lower center of the manifold 36, and toward the combined exhaust port 205. The exhaust passage 361 has a cross-section that is formed, for example, circular.

[0062] Each processing space S1 to S4 is surrounded by an exhaust guide member 362. The guide member 362 is an annular body provided to surround, for example, the area around a mounting table 22 at a processing position, with a gap between it and the mounting table 22. The guide member 362 is configured to form an annular flow path 363 inside, for example, with a rectangular longitudinal cross-section in a plan view. Figure 12 schematically shows the processing spaces S1 to S4, the guide member 362, the exhaust passage 361, and the manifold 36.

[0063] The guide member 362 forms a slit-shaped exhaust port 364 that opens toward the processing spaces S1 to S4. In this way, slit exhaust ports 364 are formed along the circumferential direction on the side circumference of each processing space S1 to S4. An exhaust passage 361 is connected to the flow path 363, and the processed gas exhausted from the slit exhaust port 364 is directed toward the confluence section and hole 351 at the lower center of the manifold 36.

[0064] As shown in Figure 12, the processing spaces S1-S2 and S3-S4 are arranged 180° rotationally symmetrically around the manifold 36 when viewed from above. As a result, the passages for the processing gas from each processing space S1 to S4 to the hole 351 via the slit exhaust port 364, the flow path 363 of the guide member 362, and the exhaust passage 361 are formed 180° rotationally symmetrically around the hole 351.

[0065] The hole 351 is connected to the exhaust pipe 61 via a confluence exhaust port 205, which is inside the thrust pipe 341 of a twin-axis vacuum seal 34 located in the center of the processing vessel 20. The exhaust pipe 61 is connected to a vacuum pump 62 that forms a vacuum exhaust mechanism via a valve mechanism 7. For example, one vacuum pump 62 is provided in each processing vessel 20, and the exhaust pipes downstream of each vacuum pump 62 merge and are connected to, for example, a factory exhaust system.

[0066] The valve mechanism 7 opens and closes the passage for the processed gas formed in the exhaust pipe 61, and includes, for example, a casing 71 and an opening / closing part 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the upper surface of the casing 71, and a second opening 74 connected to the downstream exhaust pipe is formed on the side surface of the casing 71.

[0067] The opening / closing section 72 includes, for example, an opening / closing valve 721 formed to close the first opening 73, and a lifting / lowering mechanism 722 provided outside the casing 71 for raising and lowering the opening / closing valve 721 within the casing 71. The opening / closing valve 721 is configured to be able to move up and down between a closed position that closes the first opening 73, shown by a dashed line in Figure 13, and an open position that retracts below the first and second openings 73 and 74, shown by a solid line in Figure 13. When the opening / closing valve 721 is in the closed position, the downstream end of the combined exhaust port 205 is closed, and exhaust from inside the processing container 20 is stopped. When the opening / closing valve 721 is in the open position, the downstream end of the combined exhaust port 205 is opened, and exhaust from inside the processing container 20 is released.

[0068] Next, the twin-axis vacuum seal 34 and thrust nut 35 will be described. The twin-axis vacuum seal 34 includes a thrust pipe 341, a rotor 343, a main body 345, and a direct drive motor 348. Note that the bearings and magnetic fluid seal of the twin-axis vacuum seal 34 are not shown in Figure 13.

[0069] The thrust pipe 341 is a non-rotating central axis and, via the thrust nut 35, receives the thrust load applied to the upper center of the substrate processing apparatus 2. In other words, when the processing space S1 to S4 is in a vacuum atmosphere, the thrust pipe 341 receives the vacuum load applied to the center of the substrate processing apparatus 2, thereby suppressing deformation of the upper part of the substrate processing apparatus 2. The thrust pipe 341 also has a hollow structure, and its interior is a confluence exhaust port 205. The upper surface of the thrust pipe 341 is in contact with the lower surface of the thrust nut 35. Furthermore, the space between the inner surface of the upper part of the thrust pipe 341 and the outer surface of the protrusion on the inner circumference of the thrust nut 35 is sealed by an O-ring (not shown).

[0070] The outer surface of the thrust nut 35 has a threaded structure, and the thrust nut 35 is screwed into the central partition wall of the processing container 20. The central part of the processing container 20 has a manifold 36 on top of it. The thrust load is absorbed by the manifold 36, the central partition wall of the processing container 20, the thrust nut 35, and the thrust piping 341.

[0071] The rotor 343 is positioned concentrically with the thrust pipe 341 and is the axis of rotation at the center of the rotating arm 3. A base member 33 is also connected to the rotor 343. As the rotor 343 rotates, the rotating arm 3, i.e., the end effector 32 and the base member 33, also rotate.

[0072] The main body 345 houses the rotor 343 and the direct drive motor 348 inside. The direct drive motor 348 is connected to the rotor 343 and rotates the rotating arm 3 by driving the rotor 343.

[0073] Thus, in the twin-axis vacuum seal 34, the thrust pipe 341, which is the first axis and a non-rotating central axis, supports the load on the upper part of the processing container 20 and also serves as a gas exhaust pipe, while the rotor 343 of the second axis is responsible for rotating the rotating arm 3.

[0074] [Operation of substrate processing equipment] Next, the operation of the substrate processing apparatus in this embodiment will be described using Figure 14. Figure 14 is a flowchart showing an example of the rotation arm alignment process in this embodiment. The various processes shown in Figure 14 are mainly executed based on control by the control unit 8. Furthermore, the following description will focus on the case where the identified end effector 32a is aligned (taught) with respect to the reference processing space S4.

[0075] The control unit 8 controls the substrate processing apparatus 2 to raise the temperature inside the processing container 20 to a temperature suitable for processing the wafer W, for example, around 60°C to 600°C. The control unit 8 controls the substrate processing apparatus 2 to rotate the rotating arm 3 clockwise once from its standby position (step S101) and acquire the signals detected by sensors 31b1 and 31b2. Note that the alignment process may be performed while the processing container 20 remains at room temperature.

[0076] The control unit 8 identifies the end effector 32a having a protrusion 32a1 based on the signal obtained, which is detected by the sensor 31b1 when the rotating arm 3 is rotated (step S102).

[0077] The control unit 8 stores the reference position of the identified end effector 32a (the position based on line 38 in Figure 10) based on the position where the identified end effector 32a is detected by the sensor 31b2 (step S103). At this time, the control unit 8 stores the output result (output value) of the encoder corresponding to the reference position, associating it with the said reference position. In other words, the control unit 8 latches the output value of the encoder provided on the rotating arm 3 at the timing when the tip 32a2 of the end effector 32a is detected by the sensor 31b2. The control unit 8 associates the output value of the encoder at the timing when the tip 32a2 of the end effector 32a is detected with the angle α based on the shape of the end effector 32a.

[0078] The control unit 8 adds the output value of the encoder associated with angle β, which is an angle predetermined based on the arrangement of the processing space S4 in the processing container 20, to the output value of the encoder associated with angle α. In other words, the control unit 8 adds angle α and angle β. The control unit 8 may also add the output value of the encoder associated with angle γ, which is an angle predetermined based on the arrangement of the processing space S4, to the output value of the encoder at the timing when the tip portion 32a2 of the end effector 32a is detected. In other words, the control unit 8 may add angle γ to the reference position. The control unit 8 controls the substrate processing apparatus 2 to rotate the rotating arm 3 clockwise by angle α + angle β or angle γ, thereby aligning the specified end effector 32a with the reference processing space S4 among the multiple processing spaces S1 to S4 (step S104). In other words, the control unit 8 controls the substrate processing apparatus 2 to align the specified end effector 32a to a position where the wafer W is transferred between the mounting table 22, which is provided in a specific processing space S4, and the specified end effector 32a. At this time, the position where the wafer W is transferred is the position where the center of the wafer W and the center of the mounting table 22 coincide. In this way, the end effector 32a is aligned to the reference processing space S4 based on its reference position and rotation angle, making it easy to align the end effector 32. That is, teaching can be performed by automatic sequence even when the processing container 20 is under a heated vacuum.

[0079] As described above, according to this embodiment, the processing apparatus (substrate processing apparatus 2) includes a processing container 20, a rotating arm 3, and a sensor 31b. The processing container 20 is configured to form a plurality of processing spaces S1 to S4. The rotating arm 3 has a rotation axis located in the center of the processing container 20, is rotatable about the rotation axis, and is configured to have a plurality of end effectors 32 capable of holding the same number of wafers W as the plurality of processing spaces S1 to S4. The sensor 31b is configured to detect the position of the end effectors 32. Furthermore, of the plurality of end effectors 32, at least one end effector 32a has a shape (convex portion 32a1) at the position corresponding to the sensor 31b that is different from the shape (convex portion 32a1) at the position corresponding to the sensor 31b of the other end effectors 32b. As a result, the positioning of the end effectors 32 can be easily performed.

[0080] Furthermore, according to this embodiment, the different shapes have a hypotenuse with respect to the direction of thermal expansion of the processing container 20. Also, the signal detected by the sensor 31b for at least one end effector 32a having a different shape changes according to the temperature inside the processing container 20. As a result, the expansion rate of the processing container 20 can be detected. Furthermore, the detected expansion rate can be reflected in the wafer transport accuracy.

[0081] Furthermore, according to this embodiment, the sensor 31b is configured to include a first sensor (sensor 31b1) and a second sensor (sensor 31b2). The first sensor is positioned to detect different shapes of at least one end effector 32a. The second sensor is positioned so that the detected signal does not change according to the temperature inside the processing container 20. As a result, the end effector 32 can be easily aligned in both the case of elevated temperature and room temperature.

[0082] Furthermore, according to this embodiment, two sets of end effectors 32 are provided, with the two end effectors facing each other around the axis of rotation, and the spacing between adjacent end effectors 32 is different in the front and back directions of rotation. As a result, the rotation arm 3 rotates within the processing container 20 where the Y-direction pitch and X-direction pitch of the mounting base 22 are different, and the four end effectors 32 form an X shape, making it easy to align the end effectors 32.

[0083] Furthermore, according to this embodiment, two sets of end effectors 32 are provided, with the two end effectors facing each other around the axis of rotation, and the spacing between adjacent end effectors 32 is the same in the front and rear directions of rotation. As a result, for a rotating arm 3 that rotates within a processing container 20 where the Y-direction pitch and X-direction pitch of the mounting base 22 are the same, and where the four end effectors 32 form an X shape, the alignment of the end effectors 32 can be easily performed.

[0084] Furthermore, according to this embodiment, there is only one end effector 32a with a different shape. There are also three other end effectors 32b, and the shapes of the positions corresponding to the sensor 31b1 are the same. As a result, the end effector 32a can be identified.

[0085] Furthermore, according to this embodiment, the alignment method in the processing apparatus includes the steps of: a) identifying at least one end effector 32a having a different shape based on a signal detected by the sensor 31b when the rotating arm 3 is rotated; b) storing a reference position of the identified end effector 32a based on the position detected by the sensor 31b; and c) aligning the identified end effector 32a to a specific processing space S4 among a plurality of processing spaces S1 to S4 by adding or subtracting a predetermined rotation angle to the reference position. As a result, the alignment of the end effector 32 can be easily performed.

[0086] Furthermore, according to this embodiment, step c) aligns the specified end effector 32a to a position where the wafer W is transferred between the mounting table 22 on which the wafer W is placed, which is provided in a specific processing space S4. As a result, the alignment of the end effector 32 can be easily performed.

[0087] Furthermore, according to this embodiment, the transfer position is the position where the center of the wafer W coincides with the center of the mounting table 22. As a result, wafer W can be transferred between each mounting table 22 and each end effector 32 in the processing spaces S1 to S4.

[0088] Furthermore, according to this embodiment, steps a) to c) are performed at the temperature at which processing is carried out on the wafer W in the processing space S1 to S4. As a result, the alignment of the end effector 32 can be easily performed even when the temperature rises.

[0089] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0090] For example, in the above embodiment, an example was described in which the substrate processing apparatus 2,2a is an apparatus that performs plasma CVD processing as substrate processing, but the disclosed technology may also be applied to any apparatus that performs other substrate processing such as plasma etching.

[0091] Furthermore, although a direct drive motor 348 was used as the driving method for the rotor 343 in the twin-axis vacuum seal 34 in the embodiment described above, the invention is not limited to this. For example, a pulley may be provided on the rotor 343, and it may be driven by a timing belt from a motor provided outside the twin-axis vacuum seal 34.

[0092] Furthermore, this disclosure can also be structured as follows: (1) A processing container configured to form multiple processing spaces, A rotating arm is configured to have a rotation axis located in the center of the processing container, to be rotatable about the rotation axis, and to have multiple end effectors capable of holding the same number of wafers as the number of processing spaces, A sensor configured to detect the position of the end effector, It has, Of the multiple end effectors, at least one end effector has a shape where the position corresponding to the sensor is different from the shape of the position corresponding to the sensor of the other end effectors. Processing device. (2) The aforementioned different shapes have a slanted side with respect to the direction of thermal expansion of the processing container, The signal detected by the sensor for at least one of the end effectors having the aforementioned different shapes changes according to the temperature inside the processing container. The apparatus described in (1) above. (3) The sensor is configured to include a first sensor and a second sensor. The first sensor is positioned to detect the different shapes of at least one of the end effectors, The second sensor is positioned such that the detected signal does not change according to the temperature inside the processing container. The apparatus described in (2) above. (4) The end effectors are provided in pairs at opposing positions with respect to the axis of rotation, and the spacing between adjacent end effectors is different in the front and rear directions of rotation. The processing apparatus according to any one of (1) to (3) above. (5) The end effectors are provided in pairs, positioned opposite each other with respect to the axis of rotation, and the distance between adjacent end effectors is the same in the front and rear directions of rotation. The processing apparatus according to any one of (1) to (3) above. (6) The end effector having the aforementioned different shapes is one, The other end effectors are three in number, and the shape of the position corresponding to the sensor is the same. The processing apparatus described in (4) or (5) above. (7) A method for alignment in a processing device, The aforementioned processing apparatus is A processing container configured to form multiple processing spaces, A rotating arm is configured to have a rotation axis located in the center of the processing container, to be rotatable about the rotation axis, and to have multiple end effectors capable of holding the same number of wafers as the number of processing spaces, A sensor configured to detect the position of the end effector, It has, Of the multiple end effectors, at least one end effector has a shape where the position corresponding to the sensor is different from the shape where the position corresponding to the sensor is different from that of the other end effectors. a) A step of identifying at least one of the end effectors having different shapes based on a signal detected by the sensor when the rotating arm is rotated, b) A step of storing the reference position of the identified end effector based on the position detected by the sensor, c) A step of aligning the specified end effector to a specific processing space among a plurality of processing spaces by adding or subtracting a predetermined rotation angle to the reference position, Alignment methods, including those mentioned above. (8) The above (c) involves aligning the specified end effector to a position for transferring the wafer between a mounting platform on which the wafer is placed, which is provided in a specific processing space, and the specified end effector. The alignment method described in (7) above. (9) The position where the transfer takes place is the position where the center of the wafer and the center of the stand described above coincide. The alignment method described in (8) above. (10) The above a) to c) are performed at the temperature at which the processing of the wafer is performed in the processing space. The alignment method described in any one of (7) to (9) above. [Explanation of symbols]

[0093] 1. Substrate Processing System 2,2a,2b Substrate processing apparatus 3 Rotating Arms 8 Control Unit 11 Loading / unloading ports 12 Loading / Unloading Modules 13a, 13b Vacuum transport module 14a, 14b Vacuum transfer chamber 15a, 15b Substrate transport mechanism 16 Pass 20 Processing containers 21 Loading / Unloading Exit 22 Mounting platform 26 Lift Pins 31a, 31b, 31a1, 31a2, 31b1, 31b2 sensors 32, 32a, 32b End Effector 32a1 Convex part 33 Base member 34. Twin-axis vacuum seal 35 Thrust Nut 36 Manifold 50 Gas supply system 205 Confluence exhaust port C circumference S1-S4 Processing Space T transport space W wafer

Claims

1. A processing container configured to form multiple processing spaces, A rotating arm is configured to have a rotation axis located in the center of the processing container, to be rotatable about the rotation axis, and to have multiple end effectors capable of holding the same number of wafers as the number of processing spaces, A sensor configured to detect the position of the end effector, It has, Of the multiple end effectors, at least one end effector has a shape where the position corresponding to the sensor is different from the shape of the position corresponding to the sensor of the other end effectors. Processing device.

2. The aforementioned different shapes have a slanted side with respect to the direction of thermal expansion of the processing container, The signal detected by the sensor for at least one of the end effectors having the aforementioned different shapes changes according to the temperature inside the processing container. The apparatus according to claim 1.

3. The sensor is configured to include a first sensor and a second sensor. The first sensor is positioned to detect the different shapes of at least one of the end effectors, The second sensor is positioned such that the detected signal does not change according to the temperature inside the processing container. The apparatus according to claim 2.

4. The end effectors are provided in pairs, positioned opposite each other with respect to the axis of rotation, and the spacing between adjacent end effectors is different in the front and rear directions of rotation. The apparatus according to claim 1.

5. The end effectors are provided in pairs, positioned opposite each other with respect to the axis of rotation, and the distance between adjacent end effectors is the same in the front and rear directions of rotation. The apparatus according to claim 1.

6. The end effector having the aforementioned different shapes is one in number. The other end effectors are three in number, and the shape of the position corresponding to the sensor is the same. The apparatus according to claim 4 or 5.

7. A method for alignment in a processing device, The aforementioned processing apparatus is A processing container configured to form multiple processing spaces, A rotating arm is configured to have a rotation axis located in the center of the processing container, to be rotatable about the rotation axis, and to have multiple end effectors capable of holding the same number of wafers as the number of processing spaces, A sensor configured to detect the position of the end effector, It has, Of the multiple end effectors, at least one end effector has a shape where the position corresponding to the sensor is different from the shape of the position corresponding to the sensor of the other end effectors. a) A step of identifying at least one of the end effectors having different shapes based on a signal detected by the sensor when the rotating arm is rotated, b) A step of storing the reference position of the identified end effector based on the position detected by the sensor, c) A step of aligning the specified end effector to a specific processing space among a plurality of processing spaces by adding or subtracting a predetermined rotation angle to the reference position, Alignment methods, including those mentioned above.

8. The above (c) involves aligning the specified end effector to a position for transferring the wafer between a mounting platform on which the wafer is placed, which is provided in a specific processing space, and the specified end effector. The alignment method according to claim 7.

9. The position where the transfer takes place is the position where the center of the wafer and the center of the stand described above coincide. The alignment method according to claim 8.

10. The above a) to c) are performed at the temperature at which the processing of the wafer is performed in the processing space. The alignment method according to any one of claims 7 to 9.

Images