Semiconductor equipment

Abstract

To provide a flexible and thinned touch panel with high detection sensitivity.SOLUTION: A touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. A thickness of the first substrate and the second substrate is each 1 μm to 200 μm. The first bonding layer includes a region with a thickness of 50 nm to 10 μm.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, particularly one that is flexible and can be bent. This invention relates to a display device. Furthermore, one aspect of the present invention relates to a touch panel. In particular, it relates to a flexible touch panel. And, regarding touch panels that can be curved.

[0002] One aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field relates to a product, method, or method of manufacture. Or, the present invention. One aspect of this is a process, machine, manufacture, or composition. This relates to matter. Therefore, the invention disclosed more specifically in this specification One aspect of the technical field is semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, Examples of their driving methods or manufacturing methods can be given. [Background technology]

[0003] In recent years, display devices have been expected to have applications in a variety of fields, and diversification is required. For example, thin smartphones and tablet devices equipped with touch panels as personal information terminals. They are becoming more sophisticated, high-performance, and multi-functional.

[0004] Furthermore, Patent Document 1 describes a film substrate on which a switching element such as a transistor and A flexible active-matrix light-emitting device equipped with an EL element is disclosed. ru. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0006] A touch panel having a function of inputting by touching a screen with a finger or the like as a user interface is desired for a display device that is thinned to have flexibility. One aspect of the present invention is to provide a flexible touch panel. Also,

[0007] or, one aspect of the problem is to achieve both thinning of the touch panel and high detection sensitivity. Or, one aspect of the problem is to provide a novel display device. Or, one aspect of the problem is to provide a novel touch sensor.

[0008] Or, one aspect of the problem is to provide a novel touch panel. It should be noted that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not required to solve all of these problems. Also, other problems will become apparent from the description in the specification and the like, and other problems can be extracted from the description in the specification and the like. <​​​​​​​​​​​​​​​​​​​​​​ It also has a first adhesive layer between the light-emitting element and the color filter, and a first substrate and the The thickness of substrate 2 is 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer is 50 nm or less. It has a region of 10 μm or less above it.

[0011] Furthermore, a first conductive film is provided on the first insulating layer, and one of the sensor electrodes is connected to it. It is preferable that the first conductive film is electrically connected via a conductive connector.

[0012] Another aspect of the present invention comprises a first flexible substrate and a pair of cells on the first substrate. A sensor electrode, a first insulating layer on the sensor electrode, and a transistor and A light-emitting element, a color filter below the light-emitting element, and a second insulating layer on top of the light-emitting element. A flexible second substrate is placed on the second insulating layer, and a protective layer is placed below the first substrate. It is a touch panel equipped with a first adhesive layer between the light-emitting element and the second insulating layer. The thickness of the first substrate and the second substrate is 1 μm or more and 200 μm or less, and the first adhesive layer It has a region with a thickness of 50 nm to 10 μm.

[0013] Furthermore, the semiconductor layer in which the channel of the transistor is formed has an oxide semiconductor. This is preferable.

[0014] Furthermore, the semiconductor layer in which the channel of the transistor is formed has polycrystalline silicon. It's okay to be there.

[0015] Furthermore, the protective layer may preferably contain aluminum oxide or yttrium oxide. stomach.

[0016] Furthermore, a second adhesive layer is provided between the first insulating layer and the first substrate, and the thickness of the second adhesive layer The thickness is preferably between 50 nm and 10 μm.

[0017] Furthermore, a third adhesive layer is provided between the second insulating layer and the second substrate, and the thickness of the third adhesive layer The thickness is preferably between 50 nm and 10 μm. [Effects of the Invention]

[0018] According to one aspect of the present invention, a flexible touch panel can be provided. This allows for both a thinner panel and high detection sensitivity.

[0019] Alternatively, a novel display device, touch sensor, or touch panel can be provided. The description of these effects does not preclude the existence of other effects. Furthermore, one aspect of the present invention is: It is not necessarily required to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0020] [Figure 1] A diagram showing an example of a touch panel configuration. [Figure 2] A diagram showing an example of a touch panel configuration. [Figure 3] A diagram showing an example of a touch panel configuration. [Figure 4] A diagram showing an example of a touch panel configuration. [Figure 5] A diagram showing an example of a touch panel configuration. [Figure 6] A diagram showing an example of a touch panel configuration. [Figure 7] A diagram showing an example of a touch panel configuration. [Figure 8]Block diagram and timing chart of the touch sensor. [Figure 9] Circuit diagram of a touch sensor. [Figure 10] Block diagram and timing chart of the display device. [Figure 11] A diagram illustrating the operation of a display device and a touch sensor. [Figure 12] A diagram illustrating the operation of a display device and a touch sensor. [Figure 13] Block diagram of a touch panel. [Figure 14] Pixel circuit diagram. [Figure 15] A timing chart illustrating the operation of a display device. [Figure 16] Cross-sectional view of the device and perspective view of the nozzle. [Figure 17] Example of an electronic device configuration. [Figure 18] Example of an electronic device configuration. [Figure 19] High-resolution TEM image with Cs correction in cross-section of CAAC-OS, and schematic cross-sectional diagram of CAAC-OS. [Figure 20] High-resolution TEM image with Cs correction in the plane of CAAC-OS. [Figure 21] A diagram illustrating the XRD structural analysis of CAAC-OS and single-crystal oxide semiconductors. [Figure 22] A figure showing the electron diffraction pattern of CAAC-OS. [Figure 23] A diagram showing the changes in the crystalline structure of In-Ga-Zn oxide due to electron irradiation. [Modes for carrying out the invention]

[0021] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0022] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0023] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0024] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0025] (Embodiment 1) In this embodiment, an example of the configuration of a touch panel according to one aspect of the present invention will be shown with reference to the drawings. explain.

[0026] [Example of touch panel configuration] Figure 1(A) is a schematic perspective view of the touch panel 100 illustrated below.

[0027] The touch panel 100 has a flexible substrate 101 and a flexible substrate 102 between them. It comprises at least a display device 110 and a touch sensor 120.

[0028] Figure 1(B) is a schematic perspective view showing the touch sensor 120 in Figure 1(A), and Figure 1(C) ) is a configuration including the display device 110, wiring 131, wiring 132, and wiring 144 in Figure 1(A). This is a schematic perspective view illustrating the concept.

[0029] For example, a capacitive touch sensor can be used as the touch sensor 120. Capacitive capacitance methods include surface capacitance and projected capacitance. In terms of systems, there are several types, mainly differing in their drive methods, such as self-capacitance systems and mutual-capacitance systems. Using a capacitive method is preferable because it enables simultaneous multi-point detection.

[0030] The following section describes the application of a projected capacitive touch sensor.

[0031] Furthermore, various sensors can detect the proximity or contact of objects such as fingers (for example) Applying optical sensors using photoelectric conversion elements, pressure sensors using pressure-sensitive elements, etc. It's also possible.

[0032] The touch sensor 120 has multiple electrodes 121 and multiple electrodes 122. Electrode 121 is The electrode 122 is electrically connected to one of the multiple wires 131, and the electrode 122 is connected to one of the multiple wires 132. Connect it electrically. FPC142 is electrically connected to wiring 131. Also wiring FPC143 is electrically connected to 132.

[0033] Electrode 121 has a shape that extends in one direction. Also, electrode 122 intersects with electrode 121. It has a shape that is elongated in that direction. Furthermore, there is a dielectric layer between electrode 121 and electrode 122. Capacitance is formed at these intersections. The touch sensor 120 has multiple electrodes 12 Multiple capacitive elements are arranged in a matrix configuration by 1, multiple electrodes 122, and a dielectric layer between them. It has the configured structure.

[0034] Furthermore, electrodes 121 and 122 are preferably translucent. Here, Figure 1 As shown in (B), electrodes 121 and 122 are arranged so that there is as little gap between them as possible. It is preferable to arrange them in such a shape. Also, electrodes 121 or electrodes in the gaps between them. A dummy electrode containing the same conductive film as electrode 122 may be provided. In this way, electrode 121 and electrode By minimizing the gap between 122 and the other element, the unevenness of light transmission can be reduced. As a result, the brightness unevenness of the light transmitted through the touch sensor 120 can be reduced.

[0035] The display device 110 includes a display unit 111 which contains at least a number of pixels, and a signal that signals to the display unit 111. It is equipped with wiring 144 for supplying power. The pixels of the display unit 111 are transistors It is preferable to include a display element. Typical examples of display elements are organic EL elements. You can use it.

[0036] Furthermore, in Figure 1, the display device 110 is configured to include not only a display unit 111 but also a drive circuit 112. This demonstrates the achievement. The drive circuit 112 may be, for example, a scan line drive circuit, a signal line drive circuit, etc. A circuit that functions in this way can be applied.

[0037] FPC141 is electrically connected to wiring 144. Signals and power for driving the display device 110 can be supplied via this.

[0038] Furthermore, in Figure 1, IC114, which is mounted using the COF method, is provided on FPC141. This shows an example of how it is implemented. IC114 is, for example, a scan line drive circuit or a signal line drive circuit. An IC that functions as such can be applied. Note that the display device 110 is a scan line drive circuit and signal When a circuit is provided that functions as a line drive circuit, or as a scan line drive circuit or signal line drive circuit A functional circuit is provided externally, and signals for driving the display device 110 are transmitted via the FPC 141. In cases where input is required, for example, the configuration may be configured without IC114.

[0039] In Figure 1, the display device 110, wiring 131, and wiring 132 are provided on the first circuit board 101 side. This shows an example where a touch sensor 120 is provided on the second substrate 102 side.

[0040] [Example of cross-sectional configuration] Figure 2(A) shows the cutting lines A1-A2, B1-B2, C1-C2 shown in Figure 1(A). And an example of the cross-sectional configuration in D1-D2 is shown. In Figure 2(A), the display unit 111 As an example, a cross-section of one pixel included in the display unit 111 is shown.

[0041] The first substrate 101 and the second substrate 102 are bonded together by the first adhesive layer 151. The first adhesive layer 151 is also provided between the light-emitting element 180 and the color filter 184. That's fine.

[0042] The first substrate 101 and the second substrate 102, which are flexible, have a thickness of, for example, 1 μm The particle size is 200 μm or less, preferably 3 μm to 100 μm, and more preferably 5 μm or more. It is preferable to have a thickness of 50 μm or less, and typically around 20 μm. If the value is less than m, the mechanical strength of the touch panel 100 is insufficient, which can lead to damage. This is the result. In addition, if the thickness is greater than 200 μm, the flexibility will decrease. When the substrate is bent, the bending stress generated becomes large, and the substrate itself or the substrate is provided on it. There is a risk that wiring, components, etc., may be damaged.

[0043] Furthermore, the first substrate 101 and the second substrate 102 have equal or approximately equal thickness. This is preferable. By making the thickness of the first substrate 101 and the second substrate 102 the same, The display device 110 and touch sensor 120 are positioned in the center of the touch panel. This allows for the display of the effects of bending stress that occurs when the touch panel is curved. This prevents damage to the device 110 and touch sensor 120, thus preventing damage such as breakage due to bending. This suppresses the problem and enables the realization of a highly reliable touch panel 100. For example, the first substrate 10 The smaller of the two thicknesses, 1 and 2, is 80% of the larger thickness. Preferably, the percentage should be 90% or more, and more preferably 95% or more.

[0044] Furthermore, the first substrate 101 and the second substrate 102 have the same or approximately equal coefficient of linear thermal expansion. It is preferable to use the same materials. By matching their linear thermal expansion coefficients, the manufacturing process Even when subjected to heat or when the temperature during use changes, the touch panel 100 will not behave unintentionally. This helps prevent bending. Furthermore, it ensures stable operation of the touch panel within a specified temperature range. The range can be expanded. The second is the linear thermal expansion coefficient of the material used for the first substrate 101. The difference in the linear thermal expansion coefficient of the material used for the substrate 102 is, for example, in the range from 0°C to 200°C. 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less It is preferable to have one.

[0045] In Figure 2(A), transistors 161 and 112 are included in the drive circuit 112. 62, and transistors 163 and 1 included in the pixels of the display unit 111 It shows 64. Each transistor is provided on the first insulating layer 171.

[0046] In Figures 1 and 2(A), the drive rotation is shown on the first insulating layer 171 on which the display unit 111 is formed. The diagram shows the configuration of a driver-integrated display device in which a path 112 is formed, and a display unit 111 is formed. One of the circuits, which functions as either a scan line drive circuit or a signal line drive circuit, is located separately from the insulating surface. Alternatively, a configuration that includes both may be used. For example, the COG method can be used to mount the IC for the drive circuit. Alternatively, an FPC (Flexi) with a drive circuit IC mounted using the COF method may be used. You may implement a ble Printed Circuit.

[0047] Figure 2(A) shows examples of transistors provided in the drive circuit 112 and the display unit 111. This shows a bottom-gate type transistor.

[0048] Here, the pixels of the display unit 111 provided in the display device 110, the drive circuit 112, etc. For transistors used in this context, an oxide semiconductor is applied to the semiconductor layer where the channel is formed. It is preferable to do so. In particular, it is preferable to use oxide semiconductors with a larger band gap than silicon. It is preferable to use semiconductors that have a wider band gap and lower carrier density than silicon. Using a conductive material is preferable because it can reduce the current when the transistor is off.

[0049] For example, the above oxide semiconductor may contain at least indium (In) or zinc (Zn). It is preferable that the above oxide semiconductor contains In-M-Zn oxide (M (These are denoted by metals such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.) It is more preferable that it contains oxides.

[0050] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. , or oriented perpendicular to the upper surface of the semiconductor layer, and without grain boundaries between adjacent crystal portions. It is preferable to use an oxide semiconductor film.

[0051] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor film due to stress. Therefore, Such oxide semiconductors are suitable for use in flexible, curved display panels and the like. It is possible to be there.

[0052] By using such materials as semiconductor layers, fluctuations in electrical properties are suppressed, and reliability is improved. High-quality transistors can be achieved.

[0053] Furthermore, transistors using oxide semiconductors in the semiconductor layer have a source and drain in the off state. Because the leakage current (off current) between the transistors is low, the charge stored in the capacitor is released through the transistor. It is possible to maintain the data for a long period of time. Applying such transistors to pixels... Therefore, it is also possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area. Yes. As a result, it becomes possible to create electronic devices with extremely reduced power consumption.

[0054] Furthermore, regarding preferred forms of oxide semiconductors applicable to semiconductor layers and methods for forming them, This will be explained in detail in a later embodiment.

[0055] Furthermore, it is preferable to perform the operation of the touch sensor 120 during the period when the pixel drive is paused. This action eliminates the effects of noise generated during pixel driving. This makes it possible to increase the detection sensitivity of the touch sensor 120. Because the effects of noise can be eliminated, the touch sensor and the display unit 111 or the drive circuit 11 It becomes possible to make the distance to 2 extremely small. Specifically, the light-emitting element 180 and color In the region overlapping with filter 184, the thickness of the adhesive layer 151 is 50 nm or more and 10 μm or less Below, preferably a region of 50 nm to 5 μm, more preferably 100 nm to 3 μm. The first substrate 101 and the second substrate 102 can be brought close together to the extent that they form a region.

[0056] Examples of how to drive the touch sensor 120 and the display device 110 will be described in a later implementation. It will be explained in terms of its form.

[0057] Alternatively, the pixels in each display area provided in the display device 110, and the drives used in each drive circuit For the transistor, silicon may be used in the semiconductor layer where the channel is formed. Amorphous silicon may be used as the silicon, but crystalline silicon is particularly preferred. It is preferable to use microcrystalline silicon, polycrystalline silicon, monocrystalline silicon, etc. It is preferable to use [this material]. In particular, polycrystalline silicon can be formed at a lower temperature compared to single-crystal silicon. Furthermore, it offers higher field-effect mobility and greater reliability compared to amorphous silicon. By applying polycrystalline semiconductors like this to pixels, the aperture ratio of the pixels can be improved. Furthermore, even when pixels have extremely high resolution, the gate drive circuit and source drive circuit are separated. This makes it possible to form the components on the same substrate as the base material, reducing the number of components that make up electronic devices. It is possible.

[0058] Furthermore, transistors 161 and 162 are second as shown in Figure 2(A). It may have a gate. For example, the second gate of transistor 161 is a transistor The 161 gates may be electrically connected, or different potentials may be applied to them. You may also add a second gate to transistors 163 and 164 if necessary. A t-hole may be provided. Also, if unnecessary, transistors 161 and 162 The configuration may also be one that does not have a second gate.

[0059] In addition to the gate, source, and drain of transistors, various components that make up a touch panel are also included. The wires and electrodes are made of aluminum, titanium, chromium, nickel, copper, yttrium, A single elemental metal consisting of zirconium, molybdenum, silver, tantalum, or tungsten, This allows for the use of alloys with this as the main component in single-layer or multi-layer structures. A single-layer structure of an aluminum film containing silicon, and a double-layer structure of an aluminum film laminated on a titanium film. Layered structure, two-layer structure with an aluminum film laminated on a tungsten film, copper-magnesium-a A two-layer structure in which a copper film is laminated on a luminium alloy film, a two-layer structure in which a copper film is laminated on a titanium film, A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film, and the titanium An aluminum film or copper film is laminated on top of an aluminum film or titanium nitride film, and further on top of that A three-layer structure forming a titanium film or titanium nitride film, a molybdenum film or molybdenum nitride film Then, an aluminum film or a copper film is layered on top of the molybdenum film or molybdenum nitride film. There are also three-layer structures, such as one in which layers are formed, and then a molybdenum film or molybdenum nitride film is formed on top of them. Furthermore, transparent conductive materials containing indium oxide, tin oxide, or zinc oxide may be used. Furthermore, using copper containing manganese is preferable because it improves the controllability of the shape through etching. .

[0060] One pixel in the display unit 111 is a switching transistor 163 and a current control The transistor 164 and one of the electrodes of transistor 164 (source electrode or drain) It includes a first electrode 181 that is electrically connected to the electrode and provided on the insulating layer 176. An insulating layer 175 is provided to cover the end of the first electrode 181.

[0061] Here, the structure of the transistors in the display unit 111, the drive circuit 112, etc. is not limited to the above. It is not possible. For example, it could be a staggered transistor, or an inverse staggered transistor. It is also possible to use either a top-gate or bottom-gate transistor structure. You may do so.

[0062] In Figure 3, transistors 161, 162, 163, and This shows the case where a channel-protected bottom-gate transistor is provided as STA164. A protective layer is provided to cover the upper surface of the semiconductor layer of the transistor, and the protective layer is provided The semiconductor layer and the source electrode or drain electrode are electrically connected through an opening. This configuration allows for etching during the processing of the source and drain electrodes. Therefore, the thinning of the semiconductor layer can be suppressed.

[0063] Also, in Figure 4, transistors 161, 162, 163, As the transistor 164, an example using a top-gate structure transistor is shown.

[0064] When using oxide semiconductors for the semiconductor layer of a transistor, a bottom gate structure is used. Preferably, oxide semiconductors having higher mobility than amorphous silicon are low-temperature Because it can be formed in this way, the heat resistance of the gate electrode located beneath the semiconductor layer is not a concern, and the gate electrode This allows for a wider range of material choices. Furthermore, by using a bottom gate structure, Compared to a top gate structure, the manufacturing process can be simplified, and manufacturing costs can be reduced.

[0065] In particular, by using CAAC-OS, which will be described later, as the oxide semiconductor, the source electrode and the This makes it possible to improve the resistance of oxide semiconductors to etching during the processing of rain electrodes. Therefore, when CAAC-OS is used as a semiconductor layer, the channel etch structure is preferable. It is preferable because it can be applied to the manufacturing process, thus simplifying the manufacturing steps.

[0066] Furthermore, the semiconductor layer of the transistor is formed by transferring polycrystalline silicon or an insulating layer onto it. When using single-crystal silicon, it is preferable to use a top-gate structure. By applying a transistor with a rifling structure, the wiring and electrode materials above the semiconductor layer can be used. Therefore, it is possible to use materials with low heat resistance, thus broadening the range of material choices. Furthermore, when using a highly heat-resistant material for the gate electrode, or when using polycrystalline silicon at extremely low temperatures ( For example, when forming at a temperature of less than 450 degrees Celsius, the bottom gate structure described above can be used. This is preferable because it reduces the manufacturing process.

[0067] The light-emitting element 180 has a first electrode 181, a second electrode 183, and an E sandwiched between them. It has an L layer 182. The light-emitting element 180 will be described below.

[0068] In the light-emitting element 180, the electrode provided on the light-emitting side is for light emission from the EL layer 182. A translucent material is used.

[0069] In addition to the conductive oxides and graphene mentioned above, other translucent materials include gold, silver, and platinum. Magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, Metal materials such as radium or titanium, or alloy materials containing such metal materials, can be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. When using metallic materials, alloying materials (or nitrides thereof), the material should be translucent to a certain extent. It just needs to be made thinner. Furthermore, a laminated film of the above material can be used as a conductive layer. For example, Using a multilayer film of a silver-magnesium alloy and indium tin oxide can improve conductivity. This is preferable because it allows for this.

[0070] Such electrodes are formed by methods such as vapor deposition and sputtering. Shapes are formed using extrusion methods such as the cuteting method, printing methods such as screen printing, or plating methods. It is possible.

[0071] Furthermore, when forming the above-mentioned conductive oxide having light-transmitting properties by sputtering, When the conductive oxide is deposited in an atmosphere containing argon and oxygen, its light transmittance is improved. It is possible.

[0072] Furthermore, when forming a conductive oxide film on the EL layer 182, argon with reduced oxygen concentration is used. A first conductive oxide film formed in an atmosphere containing and in an atmosphere containing argon and oxygen By forming a laminated film of the second conductive oxide film that has been deposited, the film deposition damage to the EL layer 182 is reduced. This is preferable because it allows for this. Here, it is particularly used when forming the first conductive oxide film. It is preferable that the argon gas has high purity, for example, a dew point of -70°C or lower, preferably - It is preferable to use argon gas at a temperature of 100°C or lower.

[0073] The electrode located on the side opposite to the light emission side is made of a material that is reflective to the emitted light.

[0074] Examples of light-reflecting materials include aluminum, gold, platinum, silver, nickel, and tan. Metal materials such as gusten, chromium, molybdenum, iron, cobalt, copper, or palladium, and Alloy materials containing metallic materials can be used. Lanthanum, neodymium, germanium, etc. may be added to the material. Examples of alloy materials include: Aluminum-titanium alloys, aluminum-nickel alloys, aluminum-neodymium alloys Aluminum-containing alloys such as alloys of silver and copper, and silver and palladium alloys. Examples include alloys containing silver, such as alloys of zinc and copper, and alloys of silver and magnesium. Copper-containing alloys are preferable due to their high heat resistance. Furthermore, when in contact with an aluminum-containing film, the metal The oxidation of aluminum-containing films is suppressed by laminating films or metal oxide films. This can be done. A metallic material or metal oxide material to be placed in contact with a film containing aluminum. Examples include titanium and titanium oxide. Furthermore, a film made of the above-mentioned translucent material and A film made of a metallic material may be laminated. For example, a laminated film of silver and indium tin oxide. A multilayer film of a silver-magnesium alloy and indium tin oxide can be used.

[0075] Such electrodes are formed by methods such as vapor deposition and sputtering. Shapes are formed using extrusion methods such as the cuteting method, printing methods such as screen printing, or plating methods. It is possible.

[0076] The EL layer 182 is a layer containing at least a luminescent organic compound (hereinafter also referred to as the luminescent layer). It is sufficient to include it, and it can consist of a single layer or multiple layers stacked on top of each other. The stacked configuration consists of, from the anode side, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer. Furthermore, a configuration in which electron injection layers are stacked can be given as an example. Note that this excludes the light-emitting layer. These layers do not necessarily all need to be provided within the EL layer 182. Also, these layers do not overlap. It is also possible to provide multiple light-emitting layers within the EL layer 182. Furthermore, other components such as charge generation regions can be added as appropriate. Also, for example, different types of light emission can be added. A configuration in which multiple color-emitting layers are stacked may also be used. For example, two or more light-emitting layers that are complementary in color. White light emission can be obtained by stacking light layers.

[0077] The EL layer 182 is produced by vacuum deposition, or by ejection methods such as inkjet or dispensing. It can be formed using coating methods such as spin coating, or printing methods.

[0078] In this embodiment, a reflective material is used as the first electrode 181, and the second electrode 1 A translucent material is used for 83. Therefore, the light-emitting element 180 is an upper-surface injection type ( It is a light-emitting element of the top-emission type, and emits light towards the second substrate 102.

[0079] The above is a description of the light-emitting element 180.

[0080] The second electrode 122 constituting the touch sensor 120 is formed in contact with the second insulating layer 172. Furthermore, a dielectric layer 123 is provided covering the second insulating layer 172, and the dielectric layer 123 A first electrode 121 is provided that intersects with the second electrode 122 via a certain point.

[0081] The first electrode 121 and the second electrode 122 are made of the light-transmitting conductive material described above. It is possible to be there.

[0082] After depositing a light-transmitting conductive material onto the insulating layer 172 by sputtering, By using various patterning techniques such as photolithography, unwanted parts are removed, and the first Electrode 121 and second electrode 122 can be formed. Graphene can be produced by CVD or other methods. Alternatively, the material may be formed by coating it with a solution containing dispersed graphene oxide and then reducing it.

[0083] Materials used for the dielectric layer 123 include, for example, resins such as acrylic and epoxy, and siloxane. In addition to resins containing 3-bonds, other materials include silicon oxide, silicon oxide nitride, and aluminum oxide. Inorganic insulating materials can also be used.

[0084] Furthermore, the first electrode 121, dielectric layer 123, and second electrode constitute the touch sensor 120. An insulating layer 125 is provided covering 122. The insulating layer 125 is for the touch sensor 120. It functions as a planarization layer to cover the step and make the thickness of the color filter 184 uniform. To possess.

[0085] Furthermore, the insulating layer 125 is connected to the wiring and electrodes that make up the touch sensor 120 and the display device 110 It also has the function of mitigating parasitic capacitance that can form between the wiring and electrodes contained within it. For layer 125, it is preferable to use an organic material with a low dielectric constant. Also, insulating layer 125 The thickness is, for example, 1 μm to 20 μm, preferably 1 μm to 10 μm. This is preferable because it allows for both a thinner touch panel 100 and a reduction in parasitic capacitance at the same time.

[0086] A color filter 184 is formed in the region overlapping with the light-emitting element 180 on the insulating layer 125. It is.

[0087] The color filter 184 is provided for the purpose of adjusting the color of the light emitted from the pixels and improving color purity. For example, if a light-emitting element that emits white light is provided as the light-emitting element 180, different colors By using multiple pixels equipped with color filters, full-color display can be achieved. In this case, even if you use three color filters: red (R), green (G), and blue (B), Yes, we can also add yellow (Y) to make it four colors. Also, R, G, B (and Y In addition to the above, white (W) pixels may be used, resulting in a 4-color (or 5-color) system.

[0088] Furthermore, a black matrix 185 is provided between adjacent color filters 184. The black matrix 185 blocks light from wrapping around adjacent pixels, and between adjacent pixels... It suppresses color mixing in this context. The black matrix 185 only works between adjacent pixels of different emission colors. They may be arranged and not placed between pixels of the same color. Here, the edges of the color filter 184 By positioning the section so as to overlap with the black matrix 185, light leakage can be suppressed. This is possible. Black Matrix 185 can use light-blocking materials, and metal It can be formed using resin materials containing materials and pigments. (See Figure 2(A)) The black matrix 185 is provided in an area other than the display unit 111, such as the drive circuit 112. This is preferable because it can suppress unintended light leakage caused by guided light, etc.

[0089] As shown in Figure 2(A), the first touch sensor 120 is configured on the second substrate 102 side. Electrode 121 and second electrode 122 are positioned, and a color filter is placed on the side closer to the light-emitting element 180. It is preferable to have a configuration in which 184 is arranged. By doing so, the touch sensor 120 and The distance to the touch surface can be reduced, improving the sensitivity of the touch sensor 120. - By reducing the distance between the filter 184 and the light-emitting element 180, This prevents the light emission from wrapping around to the color filter 184 of an adjacent pixel.

[0090] The insulating layers 171 and 172 use materials that suppress the diffusion of impurities from the outside. For example, silicon oxide, silicon oxide nitride, silicon oxide nitride, silicon nitride Semiconductor oxides, nitrides, or oxynitrides such as aluminum oxide, aluminum nitride Inorganic oxides such as aluminum oxide nitride, metal oxides, metal nitrides, and metal oxynitrides. It is preferable to use an edge material. Alternatively, a laminated film of such inorganic insulating material, or an inorganic A laminated film of insulating material and organic insulating material may also be used.

[0091] Wiring 132 is provided on the insulating layer 171. On the wiring 132 is insulating layer 176 and A conductive layer 166 is provided. The conductive layer 166 is provided through an opening in the insulating layer 176. And it is electrically connected to wiring 132. Here, in Figure 2(A), wiring 132 is a transistor The same conductive film as that used for the source and drain electrodes of the zista is processed and formed, and the conductive layer 166 This shows an example where the same conductive film as the first electrode 181 of the light-emitting element 180 is processed and formed. Furthermore, it is preferable that wiring 131 in Figure 1 have the same configuration as wiring 132. stomach.

[0092] Furthermore, on the second substrate 102 side, the electrode 121 of the touch sensor 120 is connected to the conductive layer 1 It extends to the region overlapping with 66, and its upper surface (the surface facing the conductive layer 166) , including parts where no structures other than the adhesive layer are provided. Also, although not shown in the figure, electrode 122 The same applies to this matter.

[0093] The electrodes 121 and conductive layer 166 of the touch sensor 120 are electrically connected by conductive particles 165. They are connected. The conductive particles 165 are arranged to be dispersed in the adhesive layer 151. Therefore, the electrode 121 and the wiring 132 are connected by conductive particles 165 and conductive layer 166. They are electrically connected. Similarly, the electrode 122 and the wiring 131 in Figure 1 are also electrically connected. They are electrically connected by the electrolytic particle 165.

[0094] The conductive particles 165 have a surface made of metal or alloy material, such as an organic resin or silica. It is preferable to use a material coated with any conductive material. Nickel or gold can be used as the metallic material. It is preferable because it can reduce contact resistance. Furthermore, coating nickel with gold, etc., It is preferable to use particles coated in layers with two or more types of metal materials. Alternatively, conductive Particles 165 may be made of a conductive material.

[0095] The conductive particles 165, sandwiched between the electrode 121 and the conductive layer 166, are subjected to the pressure applied in the vertical direction. It is preferable that the shape is deformed into a crushed shape by this. With such a configuration, the conductivity The contact area between the conductive particles 165 and the electrode 121 (or electrode 122) or the conductive layer 166 increases. Therefore, the electrical resistance in these connections can be reduced. Note that in Figure 2(A) In the schematic cross-sectional diagram shown, for convenience, the cross-sectional shape of the conductive particle 165 is oriented perpendicular to the substrate. Although it is illustrated as an ellipse with a major axis, in reality, in many cases its cross-sectional shape is circular. Alternatively, it can take the form of an ellipse with its major axis component oriented parallel to the substrate. Figure 2(B) shows conductive particles. An example is shown where the cross-section of 165 has an elliptical shape with its major axis component oriented parallel to the substrate.

[0096] On the outer periphery of the circuit board 101, a portion of the wiring 132 forms a connection terminal 156. (Figure) In 2(A), the connection terminal 156 consists of a portion of the wiring 132 and the gate electrode of the transistor. This shows a case where the conductive layer is laminated by processing the same conductive film. Furthermore, by using a multi-layered structure as the connection terminal 156, when crimping the FPC 143... The mechanical strength can be increased. The connection terminal 156 and the FPC 143 are connected by the connection layer 157 They are electrically connected via a connecting layer 157, which is an anisotropic conductive film (ACF Anisotropic conductive film, or anisotropic conductive paste (Use methods such as ACP: Anisotropic Conductive Paste) It is possible.

[0097] Furthermore, the wiring 144 that electrically connects to the display unit 111 or the drive circuit 112 is located on the circuit board 10. It is routed to other outer parts of 1. Also, on the outer periphery of the circuit board 101, the wiring 144 A portion of it constitutes part of the connection terminal 155. The connection terminal 155 is the same as the connection terminal 1 described above. A configuration similar to that of 56 can be used. The connection terminal 155 is connected to the FP via the connection layer 158. It is electrically connected to C141.

[0098] Here, the first substrate 101 and the insulating layer 171 are bonded together by the adhesive layer 152. Furthermore, the second substrate 102 and the insulating layer 172 are bonded together by an adhesive layer 153.

[0099] Adhesive layers 152 and 153 can be made from the same material as adhesive layer 151. Each adhesive layer can be made of a curable resin such as a thermosetting resin, a photocuring resin, or a two-component curable resin. Fats can be used. For example, acrylic, urethane, epoxy, or siloxane bonds. Resins such as resins having a specific property can be used.

[0100] Here, at least two of adhesive layers 151, 152, and 153 are preferably It is preferable to use the same material for all of these. This makes it possible to make the linear thermal expansion coefficients equal, reducing the heat required during the manufacturing process and the heat during use. Even when the angle changes, the touch panel 100 is prevented from unintentionally curving. Yes, it is possible. Furthermore, it can broaden the temperature range over which stable operation of the touch panel is guaranteed. .

[0101] In addition, at least two of the adhesive layers 151, 152, and 153, preferably It is preferable that all thicknesses be approximately equal. For example, of the thicknesses of two of the adhesive layers mentioned above, The smaller thickness is 50% or more, preferably 80% or more, of the larger thickness. It should be 90% or higher.

[0102] Adhesive layers 152 and 153, like adhesive layer 151, have a thickness of 50 nm or more. μm or less, preferably 50 nm to 5 μm, more preferably 100 nm to 3 μm or less It is preferable that it be thin enough to have a lower region. This allows us to reduce the thickness of the touch panel 100 and create a touch panel with excellent flexibility.

[0103] Here, a configuration in which either or both of the adhesive layer 152 and the adhesive layer 153 are not provided. This is also possible. Figure 5 shows the case where neither adhesive layer 152 nor adhesive layer 153 is provided. In Figure 5, an insulating layer 171 is provided in contact with the upper surface of the flexible first substrate 101. Furthermore, an insulating layer 172 is provided in contact with the upper surface of the second substrate 102. A configuration without adhesive layers 152 and 153 is shown, compared to the configuration shown in 2(A). However, for the configuration shown in Figures 2(A), 3, 4, etc., the adhesive layer 152 or adhesive layer 153 A configuration may be adopted in which one or both of the offsets are not provided.

[0104] It is preferable that a protective layer 178 is provided on the surface of the substrate 102. This can also be called a ceramic coating, and the touch panel 100 can be touched with a finger or stylus. It has the function of protecting the surface of the substrate 102 during operation. The protective layer 178 is, for example, Silicon oxide, aluminum oxide, yttrium oxide, yttria-stabilized zirconia ( Inorganic insulating materials such as YSZ can be used. The protective layer 178 can be made by sputtering or It can be formed by methods such as the sol-gel method. In particular, the aerosol deposition method described later can be used. Forming the protective layer 178 allows for the creation of a highly dense film, thereby increasing mechanical strength. Therefore, it is preferable.

[0105] Here, we will describe a method for forming a flexible touch panel.

[0106] For convenience, here we will refer to a configuration including pixels and drive circuits, and a configuration including optical components such as color filters. Alternatively, a configuration including a touch sensor will be referred to as an element layer. The element layer may include, for example, a display element. In addition to the display elements, there are also the wiring that electrically connects to the display elements, and transistors used in pixels and circuits. It may also be equipped with elements such as the following.

[0107] In this context, the support having an insulating surface on which the element layer is formed is referred to as the substrate. Let's assume that.

[0108] A method for forming an element layer on a substrate having a flexible insulating surface is to directly place the element layer on the substrate. A method for forming a contact element layer, and a method for forming an element layer on a support substrate having a different rigidity from the base material. Another method involves separating the element layer from the support substrate and transferring the element layer onto the substrate.

[0109] If the material constituting the base material has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the element fixed to the support substrate, transport within and between devices becomes easier. It is preferable because it makes things easier.

[0110] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to the substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and element layer are separated and transferred to the substrate. At this time, the interface between the support substrate and the peeled layer, and the peeled layer and the insulating layer You should select a material that will cause delamination at the interface of the marginal layer or within the delamination layer.

[0111] For example, a layer containing a high-melting-point metal material such as tungsten as a release layer, and oxidation of the said metal material Layers containing materials are stacked and used, with a silicon nitride layer or silicon oxynitride layer as an insulating layer on top of the release layer. It is preferable to use a layer made by stacking multiple such layers. When a high melting point metal material is used, the process of forming the element layer is It is desirable because it increases the degree of freedom.

[0112] Delamination can be achieved by applying mechanical force, etching the delamination layer, or by using the delamination interface. The peeling may also be performed by dropping a liquid onto a portion of the surface and allowing it to penetrate the entire peeling interface. Alternatively, delamination may be performed by applying heat to the delamination interface, taking advantage of the difference in thermal expansion.

[0113] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be necessary. For example, using glass as the support substrate and an organic resin such as polyimide as the insulating layer By locally heating a portion of the organic resin using laser light or the like, a starting point for delamination is formed. Alternatively, delamination may be performed at the interface between the glass and the insulating layer. By placing a metal layer between the edge layers and passing an electric current through the metal layer to heat it, Delamination may be performed at the interface between the metal layer and the insulating layer. In this case, the insulating layer made of organic resin It can be used as a base material.

[0114] Examples of flexible substrates include polyethylene terephthalate (PET) and poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resin, Liimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polystyrene sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Examples include resins, polyamide-imide resins, and polyvinyl chloride resins. In particular, the coefficient of linear thermal expansion. It is preferable to use a material with a low coefficient of thermal expansion, for example, one with a linear thermal expansion coefficient of 30 ppm / K or less. Polyamide-imide resins, polyimide resins, PET, etc., can be suitably used. A substrate (also called a prepreg) in which resin is impregnated into a fibrous material, or an inorganic filler mixed with organic resin. It is also possible to use a substrate with a reduced coefficient of linear thermal expansion.

[0115] If the above material contains fibrous material, the fibrous material is a high strength organic or inorganic compound. High-strength fibers are used. Specifically, high-strength fibers are fibers with a high tensile modulus or Young's modulus. This refers to polyvinyl alcohol-based fibers, polyester fibers, and poly- Aramid fibers, polyethylene fibers, aramid fibers, poly(p-phenylenebenzobisoxide) Examples include sazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include E-glass. Examples include glass fibers using S glass, D glass, Q glass, etc. These are woven fabrics. Alternatively, it can be used in the form of a nonwoven fabric, and a structure made by impregnating this fiber with resin and hardening the resin is made flexible. It may also be used as a substrate having flexibility. As a substrate having flexibility, it may be made of fibers and resin. Using structures improves reliability against damage caused by bending and localized compression, therefore it is preferable. stomach.

[0116] A touch panel 100 according to one aspect of the present invention has a display device 1 between a pair of flexible substrates. It has a configuration that includes 10 and a touch sensor 120. Therefore, the display device 110 and touch It is possible to position the sensor 120 in the center of the touch panel 100 in the thickness direction. As a result, the effect of the bending stress generated when the touch panel 100 is curved is affected by the display. Because the bending is prevented from reaching the base 110 or the touch sensor 120, defects such as damage due to bending will not occur. This suppresses interference and enables the creation of a highly reliable touch panel 100.

[0117] Furthermore, in one aspect of the present invention, the touch panel 100 includes wiring for the touch sensor 120 and an FPC. The terminals for connecting to the display device 110 are located on the circuit board side. Furthermore, the terminal is located in the area where the drive circuit of the display device 110 on the outer periphery of the touch panel is provided. By placing it in a different area from the designated zone, the degree of freedom in positioning the FPC can be increased. ru.

[0118] Note that the positions of FPC141, FPC142, and FPC143 are limited to the configuration shown in Figure 1. It cannot be modified as needed to match the shape and specifications of the casing of electronic devices, etc., into which the touch panel 100 is incorporated. It can be modified. For example, as shown in Figure 6(A), an FPC that is electrically connected to the wiring 131. Alternatively, 142 may be positioned on the side where the FPC143 is provided. Also, see Figure 6(A) In this configuration, FPC142 and FPC143 are provided separately, but as shown in Figure 6(B) As shown above, these can be shared in a single FPC140. Also, although not shown in the diagram, FPC 142 and FPC143 are placed on the side of the first substrate 101 where FPC141 is provided. That's fine.

[0119] Furthermore, one embodiment of the present invention is an active matrix display device having active elements in its pixels. A formula or a passive matrix system in which the pixels do not have active elements can be used.

[0120] In the active matrix system, the active elements (active elements, nonlinear elements) are, In addition to transistors, various active elements (active elements, nonlinear elements) can be used. This is possible. For example, MIM (Metal Insulator Metal), or T It is also possible to use elements such as FD (Thin Film Diode). Because it involves fewer manufacturing steps, it is possible to reduce manufacturing costs or improve yield. Alternatively, these elements can improve the aperture ratio due to their small size. This allows for lower power consumption and higher brightness.

[0121] Other than the active matrix method, there are active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements. Because it does not use sub-elements or nonlinear elements, the manufacturing process is simpler, resulting in reduced manufacturing costs or higher yield. This can improve the performance. Alternatively, active elements (active elements, nonlinear elements) can be used. Because it does not exist, the aperture ratio can be improved, leading to lower power consumption or higher brightness. It is possible.

[0122] [Differentiation] The following describes a touch panel configuration that differs in some aspects from the one described above. I will omit explanations of parts that overlap with the above and will only explain the main differences.

[0123] Figure 7(A) shows a schematic cross-sectional view of the touch panel exemplified below.

[0124] The configuration shown in Figure 7(A) includes a bottom-emission type light-emitting element, and touch The main difference from the configuration exemplified in Figure 2(A) is the position of the sensors.

[0125] On the first substrate 101, an insulating layer 172 is provided via an adhesive layer 192, and above the insulating layer 17 2, electrodes 121, electrodes 122, a dielectric layer 123, etc. that constitute the touch sensor 120 are provided. Also, the electrodes 121, electrodes 122, the dielectric layer 123, etc. are provided below the insulating layer 171 via an adhesive layer 191. In other words, the touch panel shown in FIG. 7(A) has a configuration in which the touch sensor 120 is provided between the display device 110 and the first substrate 101.

[0126] Also, the light-emitting element 180 in FIG. 7(A) applies a bottom emission type light-emitting element. That is, the light emitted from the light-emitting element 180 is extracted toward the first substrate 101 side. The color filter 184 is disposed closer to the first substrate 101 side than the light-emitting element 180. In FIG. 7( A), an example of being disposed between the inorganic insulating layer covering the transistor and the insulating layer 176 is shown. Note that a black matrix may be provided covering the transistor and the wiring.

[0127] On the first substrate 101, connection terminals 156 between the electrode 121 of the touch sensor 120 and the FPC 143 (or between the electrode 122 and the FPC 142) are provided. In the region where the connection terminals 156 are provided, there are no adhesive layer 191 and structures above the adhesive layer 191, and at least a part of the upper surface of the connection terminal 156 is exposed. As shown in FIG. 7(A), the first substrate 101 preferably extends outward from the second substrate 102 at least in the direction in which the connection terminals 156 are provided.

[0128] Also, an insulating layer 173 is provided on the lower surface (the surface on the light-emitting element 180 side) of the second substrate 102. Preferably, the insulating layer 173 is an inorganic insulating layer similar to the insulating layer 171 and insulating layer 172. It is preferable to use materials.

[0129] Since the first substrate 101 side becomes the display surface and operation surface, the surface of the first substrate 101 is protected It is preferable to provide a protective layer 178.

[0130] Also, as shown in Figure 7(B), the adhesive layer 19 between the first substrate 101 and the insulating layer 172 The configuration does not include component 2, and the insulating layer 172 is directly formed on the upper surface of the first substrate 101. That's fine.

[0131] Adhesive layers 191 and 192 are similar to adhesive layer 152 or adhesive layer 153 described above. It should be structured as such.

[0132] Note that the configuration of the transistor and its surrounding components is not limited to the configuration shown in Figure 7, but also as shown in Figures 2 to 4. The transistor configuration shown above, as well as the transistor structure and surrounding insulation described above, are all related to the transistor's structure and surrounding insulation. Layered structures such as tiers can be used.

[0133] The above is an explanation of the variations.

[0134] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0135] (Embodiment 2) In this embodiment, an example of a touch panel driving method according to one aspect of the present invention is shown with reference to the drawings. I will explain by referring to it.

[0136] [Examples of sensor detection methods] Figure 8(A) is a block diagram showing the configuration of a mutual capacitive touch sensor. ) shows the pulse voltage output circuit 501 and the current detection circuit 502. Note that in FIG. 8(A) the electrodes 121 to which the pulse voltage is applied and the electrode 122 for detecting the change in current are each shown as six wirings X1 - X6 and Y1 - Y6 respectively. Further, FIG. 8(A) shows the capacitor 503 formed by the superposition of the electrode 121 and the electrode 122. Note that the functions of the electrode 121 and the electrode 122 may be replaced with each other.

[0137] The pulse voltage output circuit 501 is a circuit for sequentially applying a pulse voltage to the wirings X1 - X6. When a pulse voltage is applied to the wirings X1 - X6, an electric field is generated between the electrode 121 and the electrode 122 that form the capacitor 503. By utilizing the fact that the electric field generated between these electrodes causes a change in the mutual capacitance of the capacitor 503 due to shielding or the like, the proximity or contact of the detected object can be detected. [[ID=二十]]

[0138] The current detection circuit 502 is a circuit for detecting the change in current in the wirings Y1 to Y6 due to the change in the mutual capacitance in the capacitor 503. In the wirings Y1 to Y6, there is no change in the detected current value when there is no proximity or contact of the detected object, but when the proximity or contact of the detected object being detected causes a decrease in the mutual capacitance, a change in which the current value decreases is detected. Note that the detection of the current may be performed using an integration circuit or the like.

[0139] In addition, in the above - mentioned Embodiment 1, either one or both of the pulse voltage output circuit 501 and the current detection circuit 50 2 may be formed on the first substrate 101. For example, if formed simultaneously with the display unit 111 or the drive circuit 112, not only can the process be simplified, but also the touch ​​​​​​​It is preferable because it can reduce the number of components in the electronic device to which panel 100 is applied. Either the pulse voltage output circuit 501 or the current detection circuit 502, or both, FPC (FPC142, FPC143 (or FP)) that electrically connects to the touch sensor 120 It may also be implemented using the COF method in C140).

[0140] In particular, as a transistor formed on the first substrate 101, the channel is formed in the semiconductor When crystalline silicon such as polycrystalline silicon or monocrystalline silicon is used in the conductive layer, pulse voltage The driving capability of circuits such as the output circuit 501 and the current detection circuit 502 is improved, and the sensitivity of the touch sensor is increased. It can improve.

[0141] Next, Figure 8(B) shows the input / output of the mutual capacitive touch sensor shown in Figure 8(A). The waveform timing chart is shown. Figure 8(B) shows the detection of each matrix within a 1-frame period. The system will perform body detection. Also, in Figure 8(B), the case where no object is detected (non-touch) is shown. This shows two cases: when detecting an object (touch) and when detecting an object to be detected. Note that Y1- The wiring for Y6 shows a waveform corresponding to the detected current value and voltage value.

[0142] A pulse voltage is applied sequentially to the wiring of X1-X6, and Y1- The waveform changes in the Y6 wiring. If there is no proximity or contact with the detected object, X1-X6 The waveforms of Y1-Y6 change uniformly in response to changes in the voltage of the wiring. Meanwhile, when the object to be detected is nearby... Alternatively, at the point of contact, the current value decreases, and therefore the waveform of the corresponding voltage value also changes. ru.

[0143] In this way, by detecting changes in mutual capacitance, the proximity or contact of the object being detected can be detected. It is possible.

[0144] Furthermore, in Figure 8(A), only a capacitor 503 is provided at the wiring intersection as a touch sensor. The configuration of a sibilance matrix touch sensor is shown, but it is equipped with transistors and capacitors. It may also be an active-matrix type touch sensor. Figure 9 shows an active-matrix type This shows an example of a sensor circuit included in a touch sensor.

[0145] The sensor circuit consists of capacitor 503, transistor 511, transistor 512, and transistor It has a transistor 513. When a signal G2 is applied to the gate of transistor 513, the source or A voltage VRES is applied to one of the drains, and the other is connected to one electrode and the transistor with capacitance 503. Electrically connect to the gate of transistor 511. Transistor 511 has either a source or a drain. One end is electrically connected to either the source or drain of transistor 512, and the other end is connected to a voltage V SS is given. Transistor 512 is given signal G1 at its gate, source or drain The other end of the input is electrically connected to the wiring ML. Voltage VSS is applied to the other electrode of capacitance 503. It can be obtained.

[0146] Next, I will explain the operation of the sensor circuit. First, the signal G2 is transistor 513. When a potential is applied that turns on the transistor, the gate of transistor 511 is connected. A potential corresponding to the voltage VRES is applied to the n. Then, the transistor is used as the signal G2. By applying a potential that turns off 513, the potential at node n is maintained.

[0147] Next, the mutual capacitance of capacitance 503 changes due to the proximity or contact of a detected object such as a finger. Consequently, the potential of node n changes from VRES.

[0148] The read operation applies a potential to signal G1 that turns on transistor 512. The current flowing through transistor 511, that is, the current flowing through wiring ML, is determined by the potential of do n. It changes. By detecting this current, it is possible to detect the proximity or contact of the object being detected. can.

[0149] As for transistors 511, 512, and 513, the channel is It is preferable to use a transistor in which an oxide semiconductor is applied to the semiconductor layer formed. By applying an oxide semiconductor to the semiconductor layer that forms the channel of transistor 513, This makes it possible to maintain the potential of node n over a long period of time, and VRES can be applied to node n. This reduces the frequency of the refresh operation (re-supplying the battery).

[0150] [Examples of methods for driving display devices] Figure 10(A) is a block diagram showing the configuration of a display device as an example. The gate drive circuit GD, source drive circuit SD, and pixel pix are shown. Note that Figure 10(A In this case, the gate lines x_1 to x_m (where m is natural) are electrically connected to the gate drive circuit GD. (Number) Source wires y_1 to y_n (where n is a natural number) electrically connected to the source drive circuit SD, Corresponding to this, each pixel is assigned a sign from (1,1) to (n,m). .

[0151] Next, Figure 10(B) shows the gate line and source line in the display device shown in Figure 10(A). This is a timing chart diagram of the signals applied. In Figure 10(B), every frame period The cases where the data signal is rewritten and cases where the data signal is not rewritten are shown separately. Note that Figure 10(B) does not take into account periods such as the return time.

[0152] When the data signal is rewritten every frame period, the gate lines x_1 to x_m are The scanning signals are applied sequentially. During the horizontal scanning period 1H, when the scanning signal is at the H level, A data signal D is applied to the source lines y_1 through y_n of each column.

[0153] If the data signal is not rewritten every frame period, the gate lines x_1 to x_m are given The scanning signal is stopped. Also, during the horizontal scanning period of 1H, the source lines y_1 to y_n of each column are stopped. Stop the data signal being sent to it.

[0154] Driving methods that do not rewrite the data signal every frame period are particularly problematic because of the transistors that pixels possess. This is effective when applying an oxide semiconductor to a semiconductor layer in which channels are formed as a dista. Transistors using oxide semiconductors are different from transistors using semiconductors such as silicon. Compared to other methods, it is possible to significantly reduce the off-current. Therefore, for one frame period To retain the data signal written in the previous period without rewriting the data signal. This allows for the retention of pixel gradation for, for example, 1 second or more, preferably 5 seconds or more. ru.

[0155] Furthermore, the semiconductor layer in which the channel is formed as a transistor in the pixel is polycrystalline silicon When applying this, the size of the memory capacity of the pixels should be increased in advance. This is preferable. The larger the retention capacity, the longer the pixel gradation can be retained. The size of the retaining capacitance is determined by the leakage current of the transistors and display elements electrically connected to the retaining capacitance. You can set it according to the flow, but for example, the retention capacitance per pixel should be between 5fF and 5pF. Preferably, the F-force is 10 fF or more and 5 pF or less, more preferably 20 fF or more and 1 pF or less. , Instead of rewriting the data signal every frame period, the data signal written in the previous period The number can be retained, for example, over a period of several frames or several tens of frames. This makes it possible to preserve the gradation of tones.

[0156] [Examples of methods for driving display devices and touch sensors] Figures 11(A) to (D) show, as an example, the touch sensor explained in Figures 8(A) and (B) and When the display device described in Figures 10(A) and (B) is driven for 1 second, This diagram illustrates the operation during consecutive frame periods. Note that in Figure 11(A), the display device... The duration of one frame is 16.7ms (frame frequency: 60Hz), and one frame of the touch sensor This shows the case where the frame duration is 16.7ms (frame frequency: 60Hz). .

[0157] In this embodiment, the touch panel operates independently of the display device and the touch sensor. Therefore, the touch detection period can be set in parallel with the display period. Thus, Figure 11(A) As shown, the frame duration of both the display device and the touch sensor is 16.7ms (frames). The frame frequency can be set to 60Hz. The wavenumber may be different. For example, as shown in Figure 11(B), the one frame period of the display device Set the duration to 8.3ms (frame frequency: 120Hz) and the duration of one frame of the touch sensor. It can also be set to 16.7ms (frame frequency: 60Hz). Also, although not shown in the diagram... The frame frequency of the display device may be set to 33.3ms (frame frequency: 30Hz). .

[0158] Furthermore, the display device is configured to allow switching of the frame frequency, so when displaying moving images, the frame frequency can be switched. Increase the frequency (for example, 60Hz or higher or 120Hz or higher) and display still images In such cases, reduce the frame rate (for example, 60Hz or less, 30Hz or less, or 1Hz or less). By doing so, the power consumption of the display device can be reduced. Also, the frame of the touch sensor The configuration allows for switching frequencies, with the frame frequency being set differently depending on whether the device is in standby mode or when a touch is detected. It's okay to make them different.

[0159] Furthermore, the touch panel in this embodiment allows for the rewriting of data signals in the display device. By not performing this operation and instead retaining the data signal rewritten in the previous period, the display device's one frame period The interval can be made longer than 16.7ms. Therefore, as shown in Figure 11(C)... First, set the frame duration of the display device to 1 sec (frame frequency: 1 Hz), and then... The frame duration of the touch sensor can also be set to 16.7ms (frame frequency: 60Hz). can.

[0160] Furthermore, in this embodiment, when the touch panel performs the operation shown in Figure 11(C), The touch sensor can then be driven. Therefore, as shown in Figure 11(D), When the touch sensor detects the proximity or contact of the object to be detected, the data on the display device It is also possible to rewrite the signal.

[0161] Here, the data signal of the display device is rewritten during the sensing period of the touch sensor. Furthermore, noise generated when driving the display device is transmitted to the touch sensor, causing the touch sensor to... This may reduce sensitivity. Therefore, especially when rewriting the data signal of a display device. It is preferable to drive the system so that the duration and the sensing period of the touch sensor are staggered.

[0162] Figure 12(A) shows the rewriting of the data signal of the display device and the sensing of the touch sensor. This shows an example of alternating between the two. Also, Figure 12(B) shows the rewriting of the data signal of the display device. This example shows that touch sensor sensing is performed once for every two actions. This is not limited to this; touch sensor sensing is performed once for every three or more rewrite operations. This configuration is also acceptable.

[0163] Furthermore, the transistors applied to the pixels of the display device are located in the semiconductor layer where the channel is formed. When using oxide semiconductors, it is possible to drastically reduce the off-current, thus reducing the data signal The frequency of rewriting can be significantly reduced. Specifically, the rewriting of data signals can be reduced. After that, a sufficiently long pause period can be provided before the data signal is rewritten again. This is possible. The pause period can be, for example, 0.5 seconds or more, 1 second or more, or 5 seconds or more. The maximum duration of the downtime depends on the leakage current of the capacitors connected to the transistors and the display elements, etc. It is restricted to, for example, less than 1 minute, less than 10 minutes, less than 1 hour, or less than 1 day. It is possible.

[0164] Figure 12(C) shows an example where the data signal of the display device is rewritten once every 5 seconds. This is shown. In Figure 12(C), the display device rewrites the data signal and then the next data signal A pause period is provided during which the system is not operated before the rewrite operation. During the pause period, The touch sensor has a frame frequency of iHz (where i is greater than or equal to the frame frequency of the display device, in this case it is 0). It can be driven at 0.2Hz or higher. Also, as shown in Figure 12(C), touch sensor The sensing should be performed during the downtime and not during the data signal rewriting period of the display device. This is preferable because it improves the sensitivity of the touch sensor. Also, in Figure 12(D) As shown, the data signal of the display device and the sensing of the touch sensor are performed simultaneously. This allows for the simplification of the driving signals.

[0165] Furthermore, during periods when the data signals of the display device are not being rewritten, the power to the drive circuit is reduced. You can stop supplying only the power supply, or in addition to that, you can also stop supplying the power potential. Power consumption can be reduced.

[0166] As shown in Embodiment 1, the touch panel according to one aspect of the present invention has two flexible elements The substrate has a configuration in which a display device and a touch sensor are sandwiched, and the distance between the display device and the touch sensor The distance can be brought extremely close. At this time, the noise from the operation of the display device is the touch sensor This may make it easier for the signal to propagate, potentially reducing the sensitivity of the touch sensor, but in this embodiment... By applying the driving method exemplified above, a touch panel that achieves both thinness and high detection sensitivity can be created. It can be achieved.

[0167] (Embodiment 3) This embodiment describes the configuration of a touch panel according to one aspect of the present invention and an example of a driving method. I will explain this by referring to the drawings.

[0168] [Touch panel configuration] Figure 13 is a block diagram illustrating an example of the touch panel configuration shown below. As such, the touch panel 80 includes a display device 800, a control circuit 810, a counter circuit 820, It has a touch sensor 850.

[0169] The touch panel 80 receives digital data, namely image signals (Video) and display devices. A sync signal (SYNC) is input to control the screen refresh of the 800. Examples of signals include horizontal synchronization signals (Hsync), vertical synchronization signals (Vsync), and There is a reference clock signal (CLK), etc.

[0170] The display device 800 consists of a display unit 801, a gate driver 802, and a source driver 80 It has 3. The display unit 801 has multiple pixels PIX. Pixels PIX in the same row are common. The gate line L_X connects to the gate driver 802, and pixels PIX in the same column are common The source line L_Y is connected to the source driver 803.

[0171] The display device 800 includes a high-level potential (VH), a low-level potential (VL), and a power supply. High power supply potential (VDD) and low power supply potential (VSS) are supplied as potentials. High level The electric potential (VH) is supplied to each pixel PIX of the display unit 801 via wiring L_H. The low-level potential (VL) is supplied to each pixel PIX of the display unit 801 via wiring L_L. It will be done.

[0172] The source driver 803 processes the input image signal and generates a data signal, source The data signal is output to line L_Y. The gate driver 802 receives the data signal. The scanning signal that selects the pixel PIX is output to the gate line L_X.

[0173] A pixel PIX is a switch whose electrical connection to the source line L_Y is controlled by the scan signal. It has a switching element. When the switching element is turned on, the source line L_Y is switched to the pixel PIX. The data signal is written.

[0174] The control circuit 810 is a circuit that controls the entire touch panel 80, and the touch panel 80 It includes a circuit that generates control signals for the constituent circuits.

[0175] The control circuit 810 receives the synchronization signal (SYNC) from the gate driver 802 and sourced It has a control signal generation circuit that generates control signals for driver 803. Gate driver 802 Control signals include the start pulse (GSP) and the clock signal (GCLK), and The control signals for the driver 803 are the start pulse (SSP) and the clock signal (SCL). K) is one example. For instance, the control circuit 810 uses clock signals (GCLK, SCLK) as This generates multiple clock signals with the same period but shifted phases.

[0176] Furthermore, the control circuit 810 receives an image signal (Video) input from outside the touch panel 80. Controls the output to source driver 803.

[0177] Furthermore, the control circuit 810 receives the sensor signal (S_tou) from the touch sensor 850. The input (ch) is received, and the image signal is corrected according to the sensor signal. The image signal correction is performed as follows: Depending on the sensor signal, image processing will be applied in response to the touch.

[0178] Source driver 803 is a digital / analog conversion circuit 804 (hereinafter referred to as DA conversion circuit). It is called 804. The DA conversion circuit 804 converts the image signal to analog and data Generates a TA signal.

[0179] Furthermore, if the image signal input to the touch panel 80 is an analog signal, the control circuit The signal is converted to a digital signal at 810 and output to the display device 800.

[0180] The image signal consists of image data for each frame. The control circuit 810 processes the image data. Based on the information obtained from this process, the output of the image signal to the source driver 803 is controlled. It has the function of processing the image data to form a frame. It is equipped with a motion detection unit 811 that detects motion from each image data. Also, when a sensor signal is input... In such cases, the image signal will be corrected based on the image data according to the sensor signal. .

[0181] When motion detection unit 811 determines that motion is present, control circuit 810 will turn on the source drive The output of the image signal to IBA 803 continues. Conversely, if it is determined that there is no movement, the control circuit 810 stops outputting the image signal to source driver 803. If there is movement again... Once a determination is made, the output of the image signal will resume.

[0182] The control circuit 810, based on the determination of the motion detection unit 811, displays the moving image (video display). A first mode for displaying motion, and a second mode for displaying motionless images (still image display). The display on the display unit 801 can be controlled by switching between two modes. The first mode is For example, if the vertical synchronization signal (Vsync) is 60Hz, the frame frequency will be 60Hz or less. The first mode is the one described above. The second mode is, for example, when the vertical synchronization signal (Vsync) is 60 In Hz, this mode sets the frame frequency to less than 60Hz.

[0183] In the second mode, the frame frequency to be set is predetermined according to the pixel voltage retention characteristics. It is preferable to set this. For example, if the motion detection unit 811 determines that there is no movement for a certain period of time Furthermore, if the output of the image signal to the source driver 803 is stopped, the pixel PIX is written. Therefore, the voltage corresponding to the grayscale of the image signal decreases. The voltage corresponding to the grayscale level is written (refreshed) at each frame frequency cycle. This refresh timing (also known as the refresh rate) is desirable. For example, in the counter circuit 820, the H level of the vertical synchronization signal (Vsync) The system should be configured to perform the operation at regular intervals based on the signal obtained by counting.

[0184] When the refresh rate of the counter circuit 820 is set to once per second, vertical synchronization If the frequency of the signal (Vsync) is 60Hz, then the vertical synchronization signal (Vsync) Based on the count signal (Count) obtained by counting the H level 60 times, refresh You just need to do this. If the refresh rate is set to once every 5 seconds, the vertical sync signal If the frequency of (Vsync) is 60Hz, then the H level of the vertical synchronization signal (Vsync) Based on the count signal obtained by counting the bell 300 times, refresh You just need to do this. Also, the counter circuit 820 receives input from the touch sensor 850. When a signal is input, the system is forced to switch from the second mode to the first mode in accordance with the sensor signal. A configuration that allows switching between configurations is also acceptable.

[0185] Furthermore, there are no particular restrictions on the image processing performed by the motion detection unit 811 for motion detection. For example, as a motion detection method, for instance, the difference between image data from two consecutive frames... There is a method to obtain minute-by-minute data. From the obtained difference data, it is possible to determine whether or not there is movement. There are also methods for detecting motion vectors, among others.

[0186] The touch sensor 850 can be operated and structured according to the above embodiment. ru.

[0187] In this embodiment, the operation of the display device and the operation of the touch sensor 850 are independent of each other. Because this can be done, a touch-sensing period can be set in parallel with the display period. Therefore, even if the control circuit 810 is configured to switch between the first mode and the second mode, The operation of the touch sensor can be controlled independently. Also, the display device 800 and the touch sensor 85 The operation of 0 is synchronized with the rewriting operation of the data signal of the display device 800 and the touch sensor 850. The sensitivity of the sensing can be increased by performing the sensing operation at different intervals.

[0188] [Example of pixel configuration] Figure 14(A) is a circuit diagram showing an example of the configuration of a pixel PIX. The pixel PIX is a transistor. It has TR1, transistor TR2, light-emitting element EL, and capacitive element CAP.

[0189] Transistor TR1 is an electrical connection between the source wire L_Y and the gate of transistor TR2. It functions as a switching element that controls the input to the gate of transistor TR1. The on / off state is controlled by the signal. Transistor TR2 controls the current flowing through the light-emitting element EL. It functions as a switching element for controlling something.

[0190] Furthermore, transistors TR1 and TR2 have a semiconductor layer in which a channel is formed. It is preferable to apply an oxide semiconductor or polycrystalline silicon to it.

[0191] A light-emitting element (EL) has an EL layer containing a light-emitting organic compound sandwiched between two electrodes. The brightness of the light emitted from the light-emitting element changes depending on the current flowing between the two electrodes. One electrode is supplied with a low-level potential from wiring L_L, and the other electrode is supplied with a transistor A high-level potential is supplied from wiring L_H via TR2.

[0192] The capacitive element CAP has the function of maintaining the gate potential of transistor TR2.

[0193] Figure 14(B) shows an example of a pixel PIX equipped with liquid crystal elements. A pixel PIX is a transistor It has a transistor (TR), a liquid crystal element (LC), and a capacitive element (CAP).

[0194] The transistor TR controls the electrical connection between one electrode of the liquid crystal element LC and the source line L_Y. It is a switching element that is controlled by a scanning signal input from its gate, which turns it on and off. It will be controlled.

[0195] Furthermore, in transistors TR, the semiconductor layer in which the channel is formed is an oxide semiconductor, or It is preferable to use polycrystalline silicon.

[0196] A liquid crystal element (LC) has two electrodes and liquid crystal. The liquid crystal is formed by the electric field between these two electrodes. The orientation changes depending on the application. Of the two electrodes of the liquid crystal element LC, via the transistor TR One electrode connected to the source line L_Y corresponds to the pixel electrode, and Vcom is applied to it. The other electrode connected to the common wire L_com corresponds to the common electrode.

[0197] The capacitive element CAP is connected in parallel with the liquid crystal element LC. In this case, one of the capacitive elements One electrode is connected to the source or drain of the transistor TR, and the other electrode of the capacitive element is connected to the capacitance line. It is connected to the capacitance line L_cap to which voltage is applied.

[0198] Here, we will provide examples using liquid crystal elements (LC) and light-emitting elements (EL) as display elements. As shown, the present invention is not limited to these embodiments.

[0199] For example, in this specification, etc., display element, display device having a display element, light emission Light-emitting devices, which are devices having elements and light-emitting elements, can take various forms or various shapes. It can have such elements. Examples of display elements, display devices, light-emitting elements, or light-emitting devices include EL (electroluminescent) elements (EL elements including organic and inorganic materials, organic E L elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) (,), transistor (a transistor that emits light in response to current), electron emission element, liquid crystal element, Electronic ink, electrophoretic elements, grating light bulbs (GLV), plasma displays Tables using PDP (Photographic Display Panel) and MEMS (Micro-Electro-Mechanical Systems) Display element, digital micromirror device (DMD), DMS (Digital Micromirror Device) (Shutter), MIRASOL (registered trademark), IMOD (Interference Modulation) (Distribution) element, shutter-type MEMS display element, optical interference type MEMS display element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays where contrast, brightness, reflectance, transmittance, etc., change due to electromagnetic effects. Some have a medium. An example of a display device using an EL element is an EL display. Examples include field emission devices. A flat-panel display (FED) or SED (Surface-C) display (SED: Surface-C Examples include (onduction electron-emitter display). An example of a display device using liquid crystal elements is a liquid crystal display (transmissive liquid crystal display). I. Semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection Examples include (ejection-type liquid crystal displays). One type of display device that uses electronic ink or electrophoretic elements. Examples include electronic paper. Furthermore, semi-transmissive liquid crystal displays and reflective liquid crystal displays... When implementing a display, some or all of the pixel electrodes are used as reflective electrodes. The goal is to make it capable of doing so. For example, some or all of the pixel electrodes are made of aluminum. It would be good to have silver, etc. Furthermore, in that case, below the reflective electrode, SRAM Any memory circuit can be installed. This further reduces power consumption. It is possible.

[0200] [Examples of how to operate a touch panel] Below, using the timing chart shown in Figure 15, we will explain the first mode for displaying video and the second mode for displaying still video. The operation of the touch panel 80 in the second mode, which displays still images, will be explained. Figure 1 5 contains the vertical synchronization signal (Vsync) and source line L_Y from source driver 803. This shows the signal waveform of the data signal (Vdata) output to the device.

[0201] Figure 15 shows an example of a case where a video is displayed, followed by a still image, and then the video is displayed again. This is a timing chart for the Touch Panel 80. Here, we have frames 1 through k. Assume there is movement in the image data up to the eye. Next, from the (k+1)th frame to (k+3) Assume there is no movement in the image data up to the (k+4)th frame. Then, the image data from the (k+4)th frame onward... Assume that the image data contains motion. Note that k is an integer greater than or equal to 2.

[0202] During the initial video display period, the motion detection unit 811 detects motion in the image data of each frame. It is determined that there is a [specific condition]. Therefore, the touch panel 80 operates in the first mode. Control circuit 8 In step 10, the frame frequency is set to be greater than or equal to the frequency of the vertical synchronization signal, in this case the frame frequency f1 and Then, the image signal (Video) is output to the source driver 803. The B803 continuously outputs the data signal (Vdata) to the source line L_Y. The length of one frame during the video display period is expressed as 1 / f1 (seconds).

[0203] Next, during the still image display period, the motion detection unit 811 performs image processing for motion detection. The process is performed, and it is determined that there is no movement in the image data of the (k+1)th frame. Therefore, touch panel 8 0 operates in the second mode. The control circuit 810 controls the frame frequency of the vertical synchronization signal. The frequency less than the frame frequency, in this case f2, is output to the source driver 803. The source driver 803 outputs the data signal (Vdata) to the source line L_Y. This shall be done intermittently. The length of one frame during the still image display period is 1 / f² (seconds). It is represented as follows:

[0204] Source driver 803 can intermittently output data signals (Vdata). Therefore, control signals (start pulse) are sent to the gate driver 802 and the source driver 803. The supply of signals (such as clock signals) can also be done intermittently, and the gate driver 8 can be checked periodically. 02 and source driver 803 can be stopped.

[0205] In the second mode, the output of the data signal (Vdata) to the intermittent source line L_Y Let me explain this in more detail. As an example, as shown in Figure 15, the (k+1)th frame When this happens, the control circuit 810 controls the gate driver 802 and the source driver 803. Output the signal and set the frame frequency to f2 to send the image signal Vide to source driver 803. It outputs o. Source driver 803 outputs the data signal written in the previous period, i.e., the The data signal (k_data) output to source line L_Y in the k-th frame is used as the source Output to line L_Y. In this way, during the still image display period, the data written in the previous period is output. The signal (k_data) is repeatedly written to the source line L_Y every 1 / f2 (seconds). Therefore, it is possible to refresh the voltage corresponding to the grayscale of the image signal of the same image. It can be fixed by regularly refreshing the device, which can prevent color shifts caused by voltage drops. This allows for reduced flicker and improved display quality of the touch panel. ru.

[0206] Then, in the control circuit 810, the motion detection unit 811 determines that there is motion in the image data. It operates in the second mode until a result or sensor signal input is obtained.

[0207] Then, the motion detection unit 811 detects motion in the image data from the (k+4)th frame onward. If it is determined that there is a problem, the touch panel 80 will operate again in the first mode. Control circuit 810 So, let's set the frame frequency to be greater than or equal to the frequency of the vertical synchronization signal, in this case, the frame frequency f1. The video signal is output to source driver 803. 03 shall continuously output the data signal (Vdata) to the source line L_Y. .

[0208] As shown in Embodiment 1, the touch panel according to one aspect of the present invention has two flexible elements The substrate has a configuration in which a display device and a touch sensor are sandwiched, and the distance between the display device and the touch sensor The distance can be brought extremely close. At this time, the noise from the operation of the display device is the touch sensor This may make it easier for the signal to propagate, potentially reducing the sensitivity of the touch sensor, but in this embodiment... By applying the driving method exemplified above, a touch panel that achieves both thinness and high detection sensitivity can be created. It can be achieved.

[0209] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0210] (Embodiment 4) In this embodiment, a protective film or the like is applied to the surface of the touch panel or other components as described above. An example of film deposition using the dishon method is shown below.

[0211] Aerosol deposition (AD) is a method for depositing films without heating the substrate. An aerosol refers to fine particles dispersed in a gas.

[0212] Figure 16(A) shows an example of a cross-sectional structure of a film deposition apparatus for aerosol-based film deposition.

[0213] The film deposition apparatus comprises a chamber 53 and a device installed inside the chamber 53 for the material to be deposited (for example, a substrate). A stage 59 that holds the plate 60, etc., and a pump (mechanism) that evacuates the inside of the chamber 53. Exhaust device 55 such as canine booster pump, rotary pump, etc., and spraying means (Nozzle 56, etc.), a raw material container 63 connected via a spraying means and a supply line, It has at least a gas line for introducing carrier gas and a gas tank 51. .

[0214] First, the raw material powder in the raw material container 63 is vibrated (by a vibrator 62, such as by ultrasound) In addition, heating removes moisture from the raw material container 63, and this moisture is then expelled through the exhaust line. The exhaust is removed by the exhaust device 54.

[0215] Next, a carrier gas is introduced into the raw material container 63 via a gas line to aerozoize the raw material powder. To convert it. Carrier gases include dry air, oxygen, and inert gases (nitrogen, helium gas). Using argon gas, etc., the flow rate of the carrier gas can be adjusted by the flow meter 52. can.

[0216] In the chamber 53, which has been depressurized by the exhaust device 55, there are fine particles of inorganic material (50 nm or larger). An aerosol containing particles (500 nm or less) is ejected from the nozzle 56 and sprayed onto the substrate 60. By colliding particles, the aerosol is solidified, forming an inorganic material layer on the surface of the substrate 60. The film deposition method that can be achieved is called the AD method. The aerosol ejected from the nozzle 56 is A fixed incident angle θ (θ = 0° to 90°) is used to strike the object to be coated (e.g., substrate 60). The positions of the object to be filmed (e.g., substrate 60) and the nozzle 56 are appropriately positioned so that they are thrust forward. The angle of incidence increases, and the impact force when the fine particles collide with the surface of the substrate 60 increases. This tends to happen. On the other hand, as the angle of incidence decreases, the impact force of the fine particles on the surface of the substrate 60 increases. The mechanical effects, including those mentioned above, become smaller. Depending on the material of the fine particles used, the resulting film (e.g., substrate) will also be affected. The optimal incidence angle θ for aerosol ejection (e.g., 60°C) may vary, therefore It is important to appropriately set the angle of incidence θ.

[0217] The apparatus shown in Figure 16(A) illustrates an example in which the incident angle θ is fixed by the angle adjustment means 61. However, it is not particularly limited. It can also be configured as a fixed-position setup.

[0218] Furthermore, an enlarged perspective view of the tip of the nozzle 56 is shown in Figure 16(B). Here, the width is The illustration shows a nozzle opening 57, but is not particularly limited and may have multiple nozzle openings. You may also use [this].

[0219] Furthermore, by placing a mask with an opening between the nozzle 56 and the substrate 60, the film can be selectively deposited. It is also possible to use a drive device 58 to move the stage 59 in the X or Y direction. Therefore, the substrate 60 can be moved in the X or Y direction to deposit a film over a wide area. .

[0220] The materials used for the fine particles in the AD method include aluminum oxide, yttrium oxide, and aluminum nitride. Examples of inorganic materials include aluminum, silicon carbide, silicon nitride, and titanium oxide.

[0221] By using the aerosol deposition (AD) method, the surface of resin substrates and organic material layers can be processed. Films can be formed on the surface at low temperatures such as room temperature. In the aerosol deposition (AD) method, fine particles After impacting the substrate surface, the fine particles undergo plastic deformation and, in some cases, are crushed and pressed onto the substrate. The particles are kicked and adhere to the surface, and as this phenomenon is repeated, the film grows.

[0222] In this embodiment, for example, a film formed by the aerosol deposition method is used as a touch panel. This is used for protective layers 178, etc., applied to the surface of the substrate on the touch sensor side in Nel 100. This can be done. For example, a film thickness of 10 on an aramid film by aerosol deposition can be achieved. An aluminum oxide film with a wavelength of 0 nm to 200 nm is formed to form a protective layer 178. The film obtained by the sol deposition method is dense, and microscopic particles are present on the film surface simultaneously with the film formation. This creates a textured surface, resulting in a protective film with strong adhesion.

[0223] (Embodiment 5) In this embodiment, an electronic device that can be manufactured by applying a touch panel according to one aspect of the present invention is provided. Next, we will explain using Figures 17 and 18.

[0224] Examples of electronic devices include television equipment (also known as televisions or television receivers). (e.g., computer monitors, digital cameras, digital video cameras, digital) Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, Examples include personal digital assistants, audio playback devices, and large-scale game machines such as pachinko machines.

[0225] Furthermore, since the apparatus according to one embodiment of the present invention is flexible, it can be used on the interior or exterior walls of houses and buildings. Alternatively, it can be incorporated along the curved surfaces of the car's interior or exterior.

[0226] Figure 17(A) shows an example of a mobile phone. The mobile phone 7400 has a housing 740 In addition to the display unit 7402 incorporated into 1, there are also operation buttons 7403 and an external connection port 7404. It is equipped with speaker 7405, microphone 7406, etc. Note that the mobile phone 7400 is A display device manufactured by applying one aspect of the present invention is used as the display unit 7402. In one aspect of the present invention, a highly reliable mobile phone equipped with a curved display unit is provided. We can provide a product with a high yield.

[0227] The mobile phone 7400 shown in Figure 17(A) can be accessed by touching the display unit 7402 with a finger, etc. Information can be entered. Also, all kinds of actions such as making phone calls or typing text can be performed. This operation can be performed by touching the display unit 7402 with a finger or the like.

[0228] Furthermore, the power can be turned ON or OFF by operating the operation button 7403, and the display unit 7402 You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0229] Figure 17(B) shows an example of a wristwatch-type personal information terminal. Personal information terminal 7100 The components are: housing 7101, display unit 7102, band 7103, buckle 7104, and operation button 7 It is equipped with terminals such as 105 and input / output terminals 7106.

[0230] The 7100 mobile information terminal offers mobile phone calls, email, document viewing and creation, music playback, and more. It can run various applications such as internet communication and computer games. Cut.

[0231] The display unit 7102 has a curved display surface, and displays information along the curved surface. It is possible to do so. In addition, the display unit 7102 is equipped with a touch sensor, and the screen can be touched with a finger or stylus. It can be operated by touching it. For example, icon 7 displayed on the display unit 7102 Touching 107 will launch the application.

[0232] The 7105 control button is used for time setting, as well as power on / off, wireless communication on, and more. Various functions such as operation, activation and deactivation of silent mode, and activation and deactivation of power saving mode. It can be made to hold. For example, the operation system built into the portable information terminal 7100 The stem allows you to freely configure the function of the control button 7105.

[0233] Furthermore, the 7100 portable information terminal is capable of performing standardized short-range wireless communication. For example, by communicating with a wireless headset, hands-free operation is possible. You can also make calls.

[0234] Furthermore, the portable information terminal 7100 is equipped with an input / output terminal 7106, and can connect to other information terminals. Data can be exchanged directly via this. Also, charging is possible via input / output terminal 7106. It can also perform electrical operations. Note that charging is done wirelessly without using the input / output terminal 7106. You may go.

[0235] The display unit 7102 of the portable information terminal 7100 is manufactured by applying one aspect of the present invention. An optical device is incorporated. According to one aspect of the present invention, a curved display unit is provided, and reliability We can provide high-quality mobile information terminals with a good yield.

[0236] Figure 17(C) shows an example of a portable display device. The display device 7300 has a housing. 7301, display unit 7302, operation button 7303, pull-out member 7304, control unit 730 It is equipped with 5.

[0237] The display device 7300 is a flexible display rolled up inside a cylindrical housing 7301. It is equipped with part 7302.

[0238] Furthermore, the display device 7300 can receive video signals via the control unit 7305, and the received video The image can be displayed on the display unit 7302. The control unit 7305 is equipped with a battery. It also has a terminal section for connecting a connector to the control unit 7305, which carries video signals and power. The system may also be configured to supply power directly from an external source via a wire.

[0239] Additionally, the operation button 7303 can be used to turn the power on and off, and to switch the displayed image. It is possible to perform actions such as [this].

[0240] Figure 17(D) shows the display unit 7302 pulled out by the pull-out member 7304. The display device 7300 is shown. In this state, an image can be displayed on the display unit 7302. The operation buttons 7303 located on the surface of the housing 7301 allow for easy one-handed operation. This is possible. Also, as shown in Figure 17(C), the operation button 7303 is located in the center of the housing 7301. By positioning it to one side, it can be easily operated with one hand.

[0241] Furthermore, when the display unit 7302 is pulled out, the display surface of the display unit 7302 becomes flat. To secure it, a reinforcing frame may be provided on the side of the display unit 7302.

[0242] In addition to this configuration, a speaker is installed in the enclosure, and the audio signal received along with the video signal is used. It would also be possible to configure it to output audio.

[0243] Figures 18(A) to (C) show a foldable portable information terminal 310. Figure 18(B) shows the mobile information terminal 310 in its unfolded state. Figure 18 shows a portable information terminal 310 in an intermediate state, transitioning from one folded state to the other. Figure C) shows the portable information terminal 310 in a folded state. The portable information terminal 310 is folded In its folded state, it offers excellent portability, and in its unfolded state, it provides a seamless, wide display area. Excellent for viewing from a distance.

[0244] The display panel 312 is supported by three housings 315 connected by hinges 313. The portable information terminal 3 is formed by bending the two housings 315 via the hinge 313. The invention allows for the reversible transformation of 10 from an unfolded state to a folded state. A display device manufactured by applying one embodiment can be used as a display panel 312. This allows for the application of a display device that can be bent with a radius of curvature of 1 mm to 150 mm.

[0245] Figures 18(D) and (E) show a foldable portable information terminal 320. Figure 18(D) Figure 1 shows the portable information terminal 320 in a folded state with the display unit 322 facing outwards. 8(E) shows the portable information terminal 320 in a folded state with the display unit 322 facing inward. As shown, when the mobile information terminal 320 is not in use, the non-display section 325 is folded outwards. This can suppress dirt and scratches on the display unit 322. A display manufactured by applying one aspect of the present invention. The device can be used as the display unit 322.

[0246] Figure 18(F) is a perspective view illustrating the external shape of the portable information terminal 330. Figure 18(G) is This is a top view of the personal digital assistant 330. Figure 18(H) illustrates the external shape of the personal digital assistant 340. This is a perspective.

[0247] The portable information terminals 330 and 340 are selected from, for example, telephones, notebooks, or information viewing devices. It has one or more functions. Specifically, it can be used as a smartphone. can.

[0248] The personal digital assistants 330 and 340 can display text and image information on multiple surfaces. For example, three operation buttons 339 can be displayed on one surface (Figure 18(F)). (H)). In addition, information 337, shown by the dashed rectangle, can be displayed on other surfaces (Figure 18). (G), (H). Examples of information 337 include email and SNS (Social Networking Services). A display that notifies you of incoming calls from networking services, telephones, etc., as well as emails and social media. Subject, sender name (email, social media, etc.), date, time, battery level, antenna This includes signal strength, etc. Alternatively, in the location where information 337 is displayed, a substitute for information 337 may be displayed. In addition, operation buttons 339, icons, etc. may be displayed. See Figures 18(F) and (G). While an example has been shown where information 337 is displayed on the upper side, one aspect of the present invention is not limited to this. No. For example, as shown in Figure 18(H), the information is displayed on the side, as in the mobile information terminal 340. That's good too.

[0249] For example, a user of the personal digital assistant 330 places the personal digital assistant 330 in the breast pocket of their clothing. Once the item is delivered, you can check the display (information 337 in this case).

[0250] Specifically, the phone number or name of the caller of the incoming call is displayed on the mobile information terminal 330. It is displayed in a position where it can be observed from the side. The user takes the portable information terminal 330 out of their pocket. Without having to do anything, you can check the display and decide whether or not to answer the call.

[0251] The casing 335 of the personal digital assistant 330 and the casing 336 of the personal digital assistant 340 each have A display device manufactured by applying one aspect of the present invention can be used for the display unit 333. According to one aspect of the present invention, a highly reliable display device having a curved display section is provided with a yield rate We can provide it well.

[0252] Furthermore, even if information is displayed on three or more screens, as shown in Figure 18(I) of the portable information terminal 345 Good. Here, information 355, information 356, and information 357 are displayed on different sides. Here is an example.

[0253] One aspect of the present invention is applied to the display unit 358 of the housing 351 of the portable information terminal 345. A display device manufactured by can be used. In one aspect of the present invention, a curved display unit can be used We can provide reliable and well-equipped display devices with a high yield.

[0254] A touch panel according to one embodiment of the present invention can be applied to the display unit of the electronic device described above. Therefore, electronic devices can be made thinner, lighter, and more multifunctional, and their detection sensitivity can be increased. It can be an electronic device that achieves a certain degree of performance.

[0255] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0256] (Embodiment 6) In this embodiment, the semiconductor layer of a semiconductor device applicable to a display panel according to one aspect of the present invention is A suitable oxide semiconductor for use will be described.

[0257] Oxide semiconductors have a large energy gap of 3.0 eV or more, making oxide semiconductors suitable for An oxide semiconductor film obtained by processing under certain conditions and sufficiently reducing its carrier density is applied. In this transistor, the off-current is compared to conventional silicon transistors. It can be considered extremely low.

[0258] Applicable oxide semiconductors include at least indium (In) or zinc (Zn). It is preferable that the oxide semiconductor contains ) and is particularly preferable that it contains In and Zn. As stabilizers to reduce variations in the electrical characteristics of transistors using these, In addition, gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) Titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (for example) One of the following is selected from cerium (Ce), neodymium (Nd), and gadolinium (Gd). It is preferable that multiple species are included.

[0259] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and in-Zn-based acids. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (Also written as), In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Z n-based oxides, In-Zr-Zn oxides, In-Ti-Zn oxides, In-Sc-Zn oxides In-Y-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides Materials, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​oxides, I n-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga- Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, I n-Hf-Al-Zn oxides can be used.

[0260] Here, an In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. It refers to the material itself, and the ratio of In, Ga, and Zn is irrelevant. Also, other than In, Ga, and Zn... It may contain metallic elements.

[0261] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0, and m is not an integer) Materials represented by ) may also be used. Note that M is selected from Ga, Fe, Mn, and Co. This refers to one or more metallic elements, or the elements used as stabilizers as described above. Also, as an oxide semiconductor, In2SnO5(ZnO) n (n > 0, and n is an integer) You may use the materials indicated as follows.

[0262] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A or In-Ga-Zn oxides with an atomic ratio of In:Ga:Zn=2:1:3 and their composition It is preferable to use an oxide from the vicinity of [the specified location].

[0263] When an oxide semiconductor film contains a large amount of hydrogen, it combines with the oxide semiconductor, causing water to form. Some of the elements become donors, generating electrons, which are carriers. This causes the transistor The threshold voltage of the film shifts in the negative direction. Therefore, the formation of oxide semiconductor films is affected. Subsequently, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or water from the oxide semiconductor film. It is preferable to remove impurities and purify the material to a high degree to minimize its content.

[0264] Furthermore, by dehydrating (dehydrogenating) the oxide semiconductor film, Oxygen levels may also decrease at the same time. Therefore, dehydration treatment of oxide semiconductor films (dehydration) To compensate for the increased oxygen deficiency caused by the chemical treatment, oxygen is added to the oxide semiconductor film. It is preferable to perform the procedure. In this specification, etc., when supplying oxygen to an oxide semiconductor film, This is sometimes referred to as oxygenation treatment. Alternatively, it refers to the stoichiometric combination of oxygen contained in oxide semiconductor films. When the amount is increased beyond the standard, it is sometimes referred to as a peroxygenation treatment.

[0265] Thus, oxide semiconductor films undergo dehydration treatment (dehydrogenation treatment) to remove hydrogen or water. The oxygen deficiency is removed and compensated for by oxygenation treatment, resulting in type i (true) and This can be an oxide semiconductor film that is very close to type i and is essentially type i (intrinsic). Note that substantially intrinsic means that the carrier density of the oxide semiconductor layer is less than 1×10 17 / cm 3 less than , preferably less than 1×10 15 / cm 3 , more preferably less than 1×1 0 13 / cm 3 , even more preferably less than 8×10 11 / cm 3 , even more preferably less than 1 ×10 11 / cm 3 , even more preferably less than 1×10 10 / cm 3 , and less than 1×10 -9 / cm 3 or more.

[0266] Also, in this way, a transistor including an i-type or substantially i-type oxide semiconductor film can achieve extremely excellent off-current characteristics. For example, the drain current when a transistor using an oxide semiconductor film is in the off state is 1×10 -18 A or less at room temperature (about 25°C), preferably 1×10 -21 A or less, more preferably 1×10 -24 A or less, or 1×10 A or less at 85 -15 °C, preferably 1×10<​​​​​​​​​​​​​​​

[0268] In this specification, "parallel" means that two lines are at an angle of -10° or more and 10° or less. This refers to a state in which the elements are positioned. Therefore, it also includes cases where the angle is between -5° and 5°. "Approximately parallel" means that two lines are positioned at an angle of -30° or more and 30° or less. Furthermore, "perpendicular" means that two lines are positioned at an angle of 80° to 100°. This refers to a state where the angle is perpendicular. Therefore, it also includes cases where the angle is between 85° and 95°. It also refers to "approximately perpendicular." This refers to a state in which two straight lines are positioned at an angle between 60° and 120°.

[0269] Furthermore, in this specification, if the crystal is trigonal or rhombohedral, it is listed as hexagonal. vinegar.

[0270] Oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligned) is used. Crystalline Oxide Semiconductor, Polycrystalline Oxide These include semiconductors, microcrystalline oxide semiconductors, and amorphous oxide semiconductors.

[0271] From another perspective, oxide semiconductors include amorphous oxide semiconductors and other crystalline oxides. They can be divided into semiconductors and crystalline oxide semiconductors. Crystalline oxide semiconductors include single-crystal oxide semiconductors and CAAC- Examples include OS, polycrystalline oxide semiconductors, and microcrystalline oxide semiconductors.

[0272] First, let's explain CAAC-OS. Note that CAAC-OS is referred to as CANC(C- This is called an oxide semiconductor having axis-aligned nanocrystals. It can also be done this way.

[0273] CAAC-OS is an oxide having multiple c-axis oriented crystalline portions (also called pellets). It is a type of semiconductor.

[0274] Transmission Electron Microscope (TEM) A composite analysis image of the bright-field image and diffraction pattern of CAAC-OS (high-angle scope) is obtained. Also called a high-resolution TEM image, when observed, multiple pellets can be identified. On the other hand, in high-resolution TEM images, the boundaries between pellets, i.e., grain boundaries, and It is also said that it is not possible to clearly confirm the grain boundaries. Therefore, CAAC-OS is said to be at the grain boundaries. This means that a decrease in electron mobility caused by this phenomenon is less likely to occur.

[0275] The following describes CAAC-OS observed by TEM. Figure 19(A) The image shows a high-resolution TEM image of the cross-section of CAAC-OS observed from a direction approximately parallel to the sample surface. For observing high-resolution TEM images, spherical aberration correction is necessary. The n Corrector function was used. High-resolution TEM images using spherical aberration correction function were obtained. This is specifically called a Cs-corrected high-resolution TEM image. Acquisition of a Cs-corrected high-resolution TEM image can be done, for example, This is performed using an atomic-resolution analytical electron microscope such as the JEM-ARM200F manufactured by JEOL Ltd. It is possible.

[0276] Figure 19(B) shows an enlarged Cs-corrected high-resolution TEM image of region (1) in Figure 19(A). Figure 19(B) shows that the metal atoms in the pellet are arranged in layers. The arrangement of metal atoms in each layer is the plane (also called the surface to be formed) that forms the CAAC-OS film. Alternatively, it reflects the irregularities of the upper surface and is parallel to the surface or upper surface of the CAAC-OS that is formed on it.

[0277] As shown in Figure 19(B), CAAC-OS has a characteristic atomic arrangement. Figure 19(C Figures 19(B) and 19(C) show characteristic atomic arrangements indicated by auxiliary lines. ) Therefore, the size of each pellet is approximately 1 nm to 3 nm, and pellets It can be seen that the size of the gap caused by the tilt is approximately 0.8 nm. Therefore, Pellets can also be called nanocrystals (nc).

[0278] Here, based on the Cs-corrected high-resolution TEM image, the pellets of CAAC-OS on substrate 5120 are... The arrangement of the 5100 can be schematically represented as a structure resembling stacked bricks or blocks. This is the result (see Figure 19(D)). Between the pellets observed in Figure 19(C) The area where the inclination occurs corresponds to region 5161 shown in Figure 19(D).

[0279] Furthermore, Figure 20(A) shows the plane of CAAC-OS observed from a direction approximately perpendicular to the sample surface. The s-corrected high-resolution TEM images are shown. Regions (1), (2), and (3) of Figure 20(A) are shown. ) are enlarged Cs-corrected high-resolution TEM images, shown in Figure 20(B), Figure 20(C), and This is shown in Figure 20(D). From Figures 20(B), 20(C), and 20(D), the pellets are It can be confirmed that the metal atoms are arranged in a triangular, square, or hexagonal shape. However, no regularity is observed in the arrangement of metal atoms between different pellets.

[0280] Next, C was analyzed by X-ray diffraction (XRD). Let's discuss AAC-OS. For example, CAAC-OS having an InGaZnO4 crystal. When structural analysis of S is performed using the out-of-plane method, the result is as shown in Figure 21(A). In some cases, a peak may appear near a diffraction angle (2θ) of 31°. This peak is in InGa Since it is attributed to the (009) plane of the ZnO4 crystal, the CAAC-OS crystal is c-axis oriented. It can be confirmed that it possesses this property, and that the c-axis is oriented in a direction approximately perpendicular to the surface to be formed or the upper surface.

[0281] In addition, in the structural analysis using the out-of-plane method of CAAC-OS, 2θ is 31 In addition to the peak near °, a peak may also appear when 2θ is near 36°. The nearby peak indicates that some of the crystals in CAAC-OS do not exhibit c-axis orientation. This shows that a more preferable CAAC-OS is structured using the out-of-plane method. The analysis shows that 2θ shows a peak near 31°, but does not show a peak near 36°.

[0282] On the other hand, in the CAAC-OS, X-rays are incident from a direction approximately perpendicular to the c-axis in an in-plane configuration. Structural analysis using the ne method reveals a peak near 2θ = 56°. This peak corresponds to I It is attributed to the (110) plane of the nGaZnO4 crystal. In the case of CAAC-OS, 2θ is 5 The sample is fixed at approximately 6° and analyzed while rotating it around the normal vector of the sample surface as the axis (φ axis). Even after performing a (φ scan), no clear peak appears, as shown in Figure 21(B). In contrast, with a single-crystal oxide semiconductor of InGaZnO4, if 2θ is fixed to around 56°, then φ When scanned, it is assigned to a crystal plane equivalent to the (110) plane, as shown in Figure 21(C). Six peaks are observed. Therefore, structural analysis using XRD indicates that CAAC-OS is It can be confirmed that the orientation of the a-axis and b-axis is irregular.

[0283] Next, we will explain CAAC-OS analyzed by electron diffraction. For example, InGa For CAAC-OS containing ZnO4 crystals, a probe with a diameter of 300 nm is used parallel to the sample surface. When the electron beam is incident, a diffraction pattern like the one shown in Figure 22(A) (limited field transmitted electron wave) is produced. This diffraction pattern may appear. (Also called a diffraction pattern.) The spot originates from the (009) plane of the crystal. Therefore, electron diffraction also reveals The pellets contained in CAAC-OS have c-axis orientation, and the c-axis is on the surface to be formed or the upper surface. It can be seen that it is oriented in a nearly perpendicular direction. On the other hand, for the same sample, when the probe is directed perpendicular to the sample surface... Figure 22(B) shows the diffraction pattern when an electron beam with a diameter of 300 nm is incident on the surface. From 2(B), a ring-shaped diffraction pattern is observed. Therefore, electron diffraction also shows It can be seen that the a-axis and b-axis of the pellets contained in CAAC-OS do not have orientation. Note that the first ring in Figure 22(B) is the (010) plane of the InGaZnO4 crystal. This is thought to be caused by the nominal (100) plane, etc. Also, the second ring in Figure 22(B) This is thought to be caused by (110) planes, etc.

[0284] Furthermore, CAAC-OS is an oxide semiconductor with a low defect level density. Possible defects include, for example, defects caused by impurities or oxygen deficiencies. Therefore, CA AC-OS can also be described as an oxide semiconductor with a low impurity concentration. Furthermore, CAAC-O S can also be described as an oxide semiconductor with few oxygen vacancies.

[0285] Impurities in oxide semiconductors can act as carrier traps or carrier sources. This can happen. Also, oxygen vacancies in oxide semiconductors can act as carrier traps, It can sometimes become a carrier source by capturing hydrogen.

[0286] Impurities are elements other than the main components of oxide semiconductors, such as hydrogen, carbon, silicon, and transition gold. There are group elements, for example. For example, silicon and other metal elements that make up oxide semiconductors are more acidic than the metal elements that make up oxide semiconductors. Elements with strong bonding forces can remove oxygen from oxide semiconductors, thereby altering the atomic arrangement of the oxide semiconductor. This disrupts the crystallinity and reduces its properties. Also, heavy metals such as iron and nickel, and argon, Because carbon dioxide and other elements have large atomic radii (or molecular radii), the atomic arrangement of oxide semiconductors This disrupts the crystallinity and reduces its properties.

[0287] Furthermore, oxide semiconductors with a low defect level density (few oxygen vacancies) have a low carrier density. Such oxide semiconductors can be made into high-purity intrinsic or substantially high-purity intrinsic materials. It is called an oxide semiconductor. CAAC-OS has a low impurity concentration and a low defect level density. Therefore, CA Transistors using AC-OS exhibit electrical characteristics where the threshold voltage is negative (normally It is also called -on.) It rarely becomes. Also, high purity intrinsic or substantially high purity intrinsic Oxide semiconductors have few carrier traps. The charged particles take a long time to release, behaving almost like fixed charges. Therefore, transistors using oxide semiconductors with high impurity concentrations and high defect level densities are available. Distors can sometimes have unstable electrical characteristics. On the other hand, transients using CAAC-OS This results in a transistor with minimal variation in electrical characteristics and high reliability.

[0288] Furthermore, because CAAC-OS has a low defect level density, it is less susceptible to damage from light irradiation and other factors. Carriers are rarely trapped in defect levels. Therefore, using CAAC-OS Lampistors exhibit minimal changes in their electrical properties due to irradiation with visible or ultraviolet light.

[0289] Next, we will explain microcrystalline oxide semiconductors.

[0290] Microcrystalline oxide semiconductors have regions where crystalline parts can be observed in high-resolution TEM images. It has regions where a clear crystalline structure cannot be observed, and regions where a clear crystalline structure cannot be observed. The crystalline portion contained is between 1 nm and 100 nm in size, or between 1 nm and 10 nm in size. This is often the case. In particular, microcrystalline molecules between 1 nm and 10 nm, or between 1 nm and 3 nm. Oxide semiconductors having nanocrystals are called nc-OS (nanocrystallin It is called e Oxide Semiconductor. nc-OS is, for example, a high-resolution semiconductor. In some cases, grain boundaries cannot be clearly identified in TEM images. Note that nanocrystals are CAA It may have the same origin as the pellets in C-OS. Therefore, nc- The crystalline portion of an operating system (OS) is sometimes referred to as a pellet.

[0291] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. In addition, nc-OS has different properties. No regularity is observed in the crystal orientation between the letts. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be indistinguishable from amorphous oxide semiconductors. There are cases where XRD equipment using X-rays with a larger diameter than pellets is used for nc-OS. When structural analysis is performed using this method, the out-of-plane method reveals the crystal planes. No peaks are detected. Also, compared to nc-OS, the probe diameter is larger than that of the pellet. For example, electron diffraction (also called limited-field electron diffraction) is performed using an electron beam of 50 nm or greater. Then, a diffraction pattern resembling a halo pattern is observed. On the other hand, for nc-OS, Pelle Nanobeam electron diffractometers use electron beams with a probe diameter close to or smaller than the pellet size. When the beam is folded, a spot is observed. Furthermore, nanobeam electron diffraction is performed on the nc-OS. In some cases, a region of high brightness can be observed in a circular (ring-shaped) pattern. Furthermore, Multiple spots may be observed within a ring-shaped region.

[0292] Thus, since there is no regularity in the crystal orientation between pellets (nanocrystals), nc -OS has RANC (Random Aligned nanocrystals) Oxide semiconductors, or NANC (Non-Aligned nanocrystals), It can also be called an oxide semiconductor having s).

[0293] nc-OS is an oxide semiconductor with higher orderliness than amorphous oxide semiconductors. nc-OS has a lower defect level density than amorphous oxide semiconductors. However, nc-O S shows no regularity in crystal orientation between different pellets. Therefore, nc-OS is C Compared to AAC-OS, the defect level density is higher.

[0294] Next, we will explain amorphous oxide semiconductors.

[0295] Amorphous oxide semiconductors are characterized by an irregular arrangement of atoms within the film and lack of crystalline regions. It is a material semiconductor. One example is an oxide semiconductor that has an amorphous state, such as quartz.

[0296] In amorphous oxide semiconductors, crystalline regions cannot be observed in high-resolution TEM images.

[0297] When structural analysis of amorphous oxide semiconductors is performed using an XRD device, out-of-p Analysis using the Lane method did not detect any peaks indicating crystal planes. Furthermore, amorphous oxide semi-crystalline materials were found. When electron diffraction is performed on a conductor, a halo pattern is observed. Furthermore, amorphous oxide semiconductors... When nanobeam electron diffraction is performed on a body, no spots are observed, only a halo pattern is seen. It is observed.

[0298] Various views have been expressed regarding amorphous structures. For example, some argue that there is absolutely no order in the arrangement of atoms. A structure that does not possess a completely amorphous structure It is sometimes called the nearest neighbor distance or second nearest neighbor distance. A structure that possesses order but lacks long-range order is sometimes called an amorphous structure. Therefore, according to the most strict definition, an oxide semiconductor having even a slight order in its atomic arrangement is non- It cannot be called a crystalline oxide semiconductor. Furthermore, it does not possess long-range order. A material semiconductor cannot be called an amorphous oxide semiconductor. Therefore, since it has a crystalline portion... For example, CAAC-OS and nc-OS are amorphous oxide semiconductors or completely amorphous It cannot be called an oxide semiconductor.

[0299] Furthermore, oxide semiconductors may have a structure between nc-OS and amorphous oxide semiconductors. Yes, such an oxide semiconductor is a type of oxide semiconductor, particularly an amorphous-like oxide semiconductor (al). ike OS:amorphous-like Oxide Semiconducto It is called r).

[0300] a-like OS is characterized by the observation of porosity (also called voids) in high-resolution TEM images. In some cases, the crystalline portion can be clearly identified in high-resolution TEM images. It has a region and a region where the crystalline part cannot be identified.

[0301] Due to its porous nature, a-like OS has an unstable structure. Below, a-lik This demonstrates that e OS has a less stable structure compared to CAAC-OS and nc-OS. Therefore, it shows the structural changes caused by electron irradiation.

[0302] The samples to be irradiated with electrons are a-like OS (referred to as sample A) and nc-OS. Prepare (referred to as Sample B) and CAAC-OS (referred to as Sample C). This sample is also an In-Ga-Zn oxide.

[0303] First, high-resolution cross-sectional TEM images are obtained for each sample. It can be seen that all of the materials contain crystalline parts.

[0304] The determination of which part should be considered a single crystal can be made as follows. The unit cell of the InGaZnO4 crystal has three In-O layers and a Ga-Zn-O layer. It is known to have a structure in which a total of nine layers, consisting of six layers, are stacked in layers along the c-axis. The spacing between these adjacent layers is approximately the same as the spacing between the grid planes of the (009) plane (also called the d value). Therefore, the value has been determined to be 0.29 nm from crystal structure analysis. The areas where the spacing is between 0.28 nm and 0.30 nm are considered to be the crystalline parts of InGaZnO4. It can be considered as such. Furthermore, the lattice patterns correspond to the ab-plane of the InGaZnO4 crystal.

[0305] Figure 23 shows an example of investigating the average size of the crystalline regions (22 to 45 locations) in each sample. However, the length of the lattice fringes mentioned above is used as the size of the crystal portion. From Figure 23, a-li It can be seen that the crystalline portion of keOS increases in proportion to the cumulative amount of electron irradiation. Specifically, as shown in (1) in Figure 23, the initial TEM observation is approximately 1.2 nm. The crystal region (also called the initial nucleus), which was initially a certain size, increased in size when the cumulative irradiation dose reached 4.2 × 10⁻⁶. 8 e - / n m 2 In this case, it can be seen that it has grown to a size of about 2.6 nm. On the other hand, nc-O S and CAAC-OS have a cumulative electron dose of 4.2 × 10⁻⁶ from the start of electron irradiation. 8 e - / nm 2 Within this range, it can be seen that there is no change in the size of the crystal portion. Specifically, As shown in (2) and (3) in Figure 23, regardless of the cumulative dose of electrons, nc-OS The crystal size of CAAC-OS is approximately 1.4 nm and 2.1 nm, respectively. It can be seen that this is the case.

[0306] Thus, in a-like OS, crystalline growth can be observed upon electron irradiation. Yes. On the other hand, in nc-OS and CAAC-OS, the growth of the crystal portion by electron irradiation is almost entirely... It can be seen that it cannot be seen. In other words, a-like OS is nc-OS and CAAC- Compared to an operating system, it appears to have an unstable structure.

[0307] Furthermore, because it is porous, a-like OS is compared to nc-OS and CAAC-OS. All of them are low-density structures. Specifically, the density of a-like OS is low compared to single-layer structures of the same composition. The density of the crystal will be between 78.6% and 92.3%. Also, the density of nc-OS and CAA The density of C-OS is between 92.3% and 100% of the density of a single crystal of the same composition. Oxide semiconductors with a crystal density of less than 78% are inherently difficult to deposit into film.

[0308] For example, in an oxide semiconductor satisfying In:Ga:Zn=1:1:1 [atomic ratio], The density of single-crystal InGaZnO4 with a rhombohedral crystal structure is 6.357 g / cm³. 3 This is how it will be. For example, in an oxide semiconductor that satisfies In:Ga:Zn=1:1:1 [atomic ratio] The density of a-like OS is 5.0 g / cm³. 3 More than 5.9g / cm 3 It will be less than. For example, in an oxide semiconductor satisfying In:Ga:Zn=1:1:1 [atomic ratio] The densities of nc-OS and CAAC-OS are 5.9 g / cm³. 3 More than 6.3g / cm 3 It will be less than.

[0309] Note that single crystals with the same composition may not exist. In that case, a mixture of crystals with different compositions in any proportion may be used. By combining single crystals, the density equivalent to a single crystal at a desired composition can be estimated. This is possible. The density corresponding to a single crystal of the desired composition can be obtained by combining single crystals of different compositions. The proportion can be estimated using a weighted average. However, the density should be as small as possible. It is preferable to estimate by combining different types of single crystals.

[0310] As described above, oxide semiconductors can take on various structures, each possessing a variety of properties. Oxide semiconductors include, for example, amorphous oxide semiconductors, a-like OS, and microcrystalline oxide semiconductors. The film may be a multilayer film containing two or more materials, including a monocrystalline semiconductor and CAAC-OS.

[0311] CAAC-OS films can be formed, for example, by the following method.

[0312] CAAC-OS films are, for example, polycrystalline oxide semiconductor sputtering targets. The film is deposited using a sputtering method.

[0313] By increasing the substrate temperature during film deposition, the migration of sputtering particles after reaching the substrate is reduced. This occurs. Specifically, the substrate temperature is between 100°C and 740°C, preferably between 200°C and 740°C. The film is deposited at a temperature of 500°C or lower. By increasing the substrate temperature during film deposition, sputtering particles are formed. When the sputtering particles reach the substrate, migration occurs on the substrate, and the sputtering particles become flat. The surface adheres to the substrate. At this time, the sputtering particles become positively charged, causing sputtering. Because the ring particles repel each other while adhering to the substrate, the sputtering particles become unevenly distributed and non-uniform. This allows for the formation of a CAAC-OS film with uniform thickness without overlapping.

[0314] By reducing the inclusion of impurities during film formation, it is possible to suppress the disruption of the crystalline state due to impurities. For example, the concentration of impurities present in the deposition chamber (such as hydrogen, water, carbon dioxide, and nitrogen) can be measured. It would be good to reduce it. Also, it would be good to reduce the impurity concentration in the film formation gas. Specifically, the dew point is A film-forming gas with a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0315] Furthermore, by increasing the oxygen content in the deposition gas and optimizing the power, plasma damage during film deposition can be reduced. It is preferable to reduce the amount of oxygen. The oxygen content in the film-forming gas is 30% by volume or more, preferably 100%. This is expressed as a percentage by volume.

[0316] Alternatively, the CAAC-OS film is formed by the following method.

[0317] First, a first oxide semiconductor film is deposited with a thickness of 1 nm or more and less than 10 nm. The semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C or higher. The temperature should be 500°C or lower, preferably 150°C to 450°C, and the oxygen content in the film-forming gas should be 30%. The film is formed at a volume of % or more, preferably 100% by volume.

[0318] Next, a heat treatment is performed to transform the first oxide semiconductor film into a highly crystalline first CAAC-OS film. The heat treatment temperature shall be 350°C to 740°C, preferably 450°C to 650°C. The temperature should be below ℃. Furthermore, the heat treatment time should be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. The temperature should be below a certain level. Furthermore, the heat treatment may be carried out in an inert or oxidizing atmosphere. Alternatively, the material is heated in an inert atmosphere, followed by heat treatment in an oxidizing atmosphere. Heat treatment in an air-filled environment allows for a rapid reduction in the impurity concentration of the first oxide semiconductor film. Yes, it is possible. On the other hand, heat treatment in an inert atmosphere generates oxygen vacancies in the first oxide semiconductor film. This can occur. In such cases, the oxygen deficiency is reduced by heat treatment in an oxidizing atmosphere. It is possible. Furthermore, the heat treatment can be performed at 1000 Pa or less, 100 Pa or less, or 10 Pa or less. This may be carried out under reduced pressure of 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film This can be reduced in an even shorter amount of time.

[0319] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm, so the thickness is 1 Compared to cases where the wavelength is 0 nm or greater, crystallization can be easily achieved by heat treatment.

[0320] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is made 10 nm or more in thickness. The first film is deposited to a thickness of 0 nm or less. The second oxide semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C to 500°C, preferably 150°C to 450°C. The temperature should be below ℃, and the oxygen content in the film-forming gas should be 30% by volume or more, preferably 100% by volume. To form a membrane.

[0321] Next, a heat treatment is performed to solid-phase grow a second oxide semiconductor film from the first CAAC-OS film. This process creates a second CAAC-OS film with high crystallinity. The heat treatment temperature is 350°C. The temperature should be between 740°C and 750°C, preferably between 450°C and 650°C. The interval shall be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. Furthermore, the heat treatment shall be as follows: The process can be carried out in an inert or oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After this, heat treatment is performed in an oxidizing atmosphere. Heat treatment in an inert atmosphere produces a second acid The impurity concentration of the ionized semiconductor film can be reduced in a short time. On the other hand, in an inert atmosphere... Heat treatment can create oxygen vacancies in the second oxide semiconductor film. In that case, oxidation The oxygen deficiency can be reduced by heat treatment in a suitable atmosphere. Note that the heat treatment is 1 It can also be done under reduced pressure of 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced even more quickly. Cut.

[0322] In this manner, a CAAC-OS film with a total thickness of 10 nm or more is formed. It is possible.

[0323] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Explanation of Symbols]

[0324] 51 Gas Tank 52 Flow meter 53 Chambers 54 Exhaust system 55 Exhaust system 56 nozzles 57 Nozzle opening 58 Drive unit 59 stages 60 circuit boards 61 Angle adjustment means 62 Vibrator 63 Raw material container 80 Touch Panel 100 Touch Panels 101 circuit board 102 circuit boards 110 Display device 111 Display section 112 Drive Circuit 114 IC 120 touch sensors 121 Electrode 122 electrodes 123 Dielectric layer 125 Insulating layer 131 Wiring 132 Wiring 140 FPC 141 FPC 142 FPC 143 FPC 144 Wiring 151 Adhesive layer 152 Adhesive layer 153 Adhesive layer 155 Connection terminals 156 Connection terminals 157 Connecting Layer 158 Connecting Layer 161 transistors 162 transistors 163 transistors 164 transistors 165 Conductive particles 166 Conductive layer 171 Insulating layer 172 Insulating layer 173 Insulating layer 175 Insulating layer 176 Insulating layer 178 Protective layer 180 light-emitting elements 181 Electrode 182 EL layer 183 Electrode 184 Color Filters 185 Black Matrix 191 Adhesive layer 192 Adhesive layer 310 Mobile Information Terminal 312 Display Panel 313 Hinge 315 cabinets 320 Mobile Information Terminals 322 Display section 325 Hidden part 330 Mobile Information Terminals 333 Display section 335 cabinets 336 cabinets 337 Information 339 Operation buttons 340 Mobile Information Terminals 345 Mobile Information Terminal 351 cabinets 355 Information 356 Information 357 Information 358 Display section 501 Pulse Voltage Output Circuit 502 Current detection circuit 503 capacity 511 transistors 512 transistors 513 Transistors 800 display device 801 Display section 802 Gate Driver 803 Source Driver 804 DA conversion circuit 810 Control Circuit 811 Detection Unit 820 Counter Circuit 850 Touch Sensors 5100 pellets 5120 circuit board 5161 area 7100 Mobile Information Terminal 7101 enclosure 7102 Display section 7103 Band 7104 Buckle 7105 Operation Buttons 7106 Input / output terminal 7107 Icon 7300 display device 7301 enclosure 7302 Display section 7303 Operation Buttons 7304 component 7305 Control Unit 7400 mobile phones 7401 enclosure 7402 Display section 7403 Operation Buttons 7404 External connection port 7405 Speaker 7406 Microphone

Claims

[Claim 1] The first substrate and A first insulating layer having a region located above the first substrate, An adhesive layer having a region located above the first insulating layer, A second substrate having a region located above the adhesive layer, The first insulating layer has an opening, The adhesive layer has a plurality of conductive particles, One of the plurality of conductive particles has a region that overlaps with the first insulating layer, One of the plurality of conductive particles is a semiconductor device located inside the opening.

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