Components for semiconductor manufacturing equipment

Abstract

To provide a member for a semiconductor manufacturing apparatus and the semiconductor manufacturing apparatus capable of reducing the generation or an influence of particles.SOLUTION: A member for a semiconductor manufacturing apparatus includes a base material having a first surface, a second surface on the opposite side of the first surface, and at least one hole penetrating the first and second surfaces, and a ceramic layer provided on the base material. The hole includes a first hole part continuing to the first surface and inclined in a first direction from the first surface to the second surface, a second hole part existing between the second surface and the first hole part in the first direction and extending along the first direction, and a third hole part existing between the first hole part and the second hole part in the first direction, inclined in the first direction, and exposed. The plasma corrosion resistance of the ceramic layer is higher than that of the base material. The ceramic layer includes a first part provided on the first surface and exposed, and a second part provided on the first hole part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] Aspects of the present invention generally relate to parts for semiconductor manufacturing equipment. Material To relate to. [Background technology]

[0002] In the semiconductor device manufacturing process, semiconductor manufacturing equipment is used that processes workpieces such as semiconductor wafers with plasma. Within such semiconductor manufacturing equipment, there may be components with at least one hole that come into contact with the plasma. Particles can be generated from these semiconductor manufacturing equipment components. Since these particles contribute to a decrease in the yield of manufactured semiconductor devices, there is a need to reduce or eliminate the impact of particle generation. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2012-057251 [Patent Document 2] Japanese Patent Publication No. 2016-028379 [Overview of the project] [Problems that the invention aims to solve]

[0004] The present invention was made based on the recognition of such problems, and is a part for semiconductor manufacturing equipment that can reduce the generation or influence of particles. Material The purpose is to provide. [Means for solving the problem]

[0005] The first invention is a semiconductor manufacturing apparatus component used in a chamber of a semiconductor manufacturing apparatus, comprising: a substrate having a first surface, a second surface opposite to the first surface, and at least one hole penetrating the first surface and the second surface; and a ceramic layer provided on the substrate, wherein the hole has a first hole portion continuous with the first surface and inclined with respect to a first direction toward the second surface, a second hole portion located between the second surface and the first hole portion in the first direction and extending along the first direction, and a third hole portion located between the first hole portion and the second hole portion in the first direction and inclined with respect to the first direction, the plasma corrosion resistance of the ceramic layer is higher than that of the substrate, and the ceramic layer includes a first portion provided so as to be exposed on the first surface and a second portion provided on the first hole portion, and the third hole portion is provided so as to be exposed.

[0006] According to this semiconductor manufacturing equipment component, the second portion of the ceramic layer is provided in the first hole, which is relatively close to the first portion that contacts the plasma, on the inclined surface formed by the first and third holes. This effectively suppresses the generation of particles from the first hole. On the other hand, the third hole, which is relatively far from the first portion, is in contact with the plasma. That is, the third hole, which is farther from the first portion and has a relatively low risk of plasma corrosion compared to the first hole, is not covered with a ceramic layer, and the substrate is in direct contact with the plasma at the third hole. As a result, a ceramic layer with inferior properties is formed in the third hole, and the generation of particles from that ceramic layer can be effectively suppressed.

[0007] The second invention is a semiconductor manufacturing apparatus component in which, in the first invention, the hole has an inclined surface including the first hole portion and the third hole portion, and the inclined surface is linear in a cross-section parallel to the first direction.

[0008] This semiconductor manufacturing equipment component can mitigate electric field concentration in an inclined surface or a ceramic layer on an inclined surface.

[0009] The third invention is a component for semiconductor manufacturing equipment, wherein, in the first invention, the hole has an inclined surface including the first hole portion and the third hole portion, and the angle between the first surface and the inclined surface is greater than the angle between the second hole portion and the inclined surface.

[0010] According to this semiconductor manufacturing equipment component, the relatively large angle between the first surface and the inclined surface mitigates plasma concentration near the edge formed by the first surface and the inclined surface, thereby suppressing particle generation. Furthermore, the relatively small angle between the second hole and the inclined surface more effectively prevents plasma from entering the hole.

[0011] The fourth invention is a component for semiconductor manufacturing equipment in which, in any one of the first to third inventions, the thickness of the second portion is thinner than that of the first portion.

[0012] According to this semiconductor manufacturing equipment component, the first portion, which is more easily exposed to plasma, is thicker than the second portion, thereby further suppressing the generation of particles from the first surface. On the other hand, the second portion, which is less exposed to plasma than the first portion, is relatively thin, which suppresses, for example, the collapse of the ceramic layer in the second portion, thereby further suppressing the generation of particles.

[0013] The fifth invention is a component for semiconductor manufacturing equipment, wherein, in any one of the first to fourth inventions, the density of the second portion is higher than that of the first portion.

[0014] According to this semiconductor manufacturing equipment component, the relatively high density of the second portion suppresses damage and delamination to the second portion due to physical contact during maintenance or handling of the semiconductor manufacturing equipment component. Therefore, the generation of particles can be further suppressed.

[0015] The sixth invention is a component for semiconductor manufacturing equipment, wherein, in any one of the first to fifth inventions, the hardness of the second part is higher than the hardness of the first part.

[0016] According to this member for a semiconductor manufacturing apparatus, due to the relatively high hardness of the second portion, damage or peeling of the second portion can be suppressed by physical contact during maintenance or handling of the member for a semiconductor manufacturing apparatus. Therefore, generation of particles can be further suppressed.

[0017] A seventh invention is a member for a semiconductor manufacturing apparatus, in any one of the first to sixth inventions, wherein the ceramic layer includes polycrystalline ceramics.

[0018] According to this member for a semiconductor manufacturing apparatus, generation or influence of particles can be more reliably reduced.

[0019] An eighth invention is a member for a semiconductor manufacturing apparatus, in the seventh invention, wherein an average crystallite size of the polycrystalline ceramics calculated from a TEM image with a magnification of 400,000 times to 2,000,000 times is 3 nanometers or more and 50 nanometers or less.

[0020] According to this member for a semiconductor manufacturing apparatus, generation or influence of particles can be more reliably reduced.

[0021] A ninth invention is a member for a semiconductor manufacturing apparatus, in any one of the first to eighth inventions, wherein the ceramic layer includes at least one selected from the group consisting of oxides of rare earth elements, fluorides of rare earth elements, and oxyfluorides of rare earth elements.

[0022] According to this member for a semiconductor manufacturing apparatus, generation or influence of particles can be more reliably reduced.

[0023] A tenth invention is a member for a semiconductor manufacturing apparatus, in the ninth invention, wherein the rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

[0024] This component for semiconductor manufacturing equipment makes it possible to more reliably reduce the generation or impact of particles.

[0025] The eleventh invention is a component for semiconductor manufacturing equipment in which, in any one of the first to tenth inventions, the substrate includes a ceramic.

[0026] This component for semiconductor manufacturing equipment makes it possible to more reliably reduce the generation or impact of particles.

[0027] The twelfth invention is a component for semiconductor manufacturing equipment, wherein, in the eleventh invention, the substrate contains alumina.

[0028] This component for semiconductor manufacturing equipment makes it possible to more reliably reduce the generation or impact of particles.

[0029] The 13th invention is a semiconductor manufacturing apparatus comprising a chamber and a semiconductor manufacturing apparatus component described in any one of the 1st to 12th inventions, wherein the chamber has an inner wall forming a space in which plasma is generated, and the ceramic layer of the semiconductor manufacturing apparatus component constitutes at least a part of the inner wall.

[0030] This semiconductor manufacturing equipment can reduce the generation or impact of particles. [Effects of the Invention]

[0031] According to an aspect of the present invention, a component for semiconductor manufacturing equipment and a semiconductor manufacturing equipment are provided that can reduce the generation or influence of particles. [Brief explanation of the drawing]

[0032] [Figure 1] This is a cross-sectional view illustrating a semiconductor manufacturing apparatus having a component for semiconductor manufacturing apparatus according to the first embodiment. [Figure 2]This is a cross-sectional view illustrating a part of a component for semiconductor manufacturing equipment according to the first embodiment. [Figure 3] Figures 3(a) to 3(c) are cross-sectional views illustrating a part of another semiconductor manufacturing equipment component according to the first embodiment. [Figure 4] Figures 4(a) to 4(c) are cross-sectional views illustrating a portion of the substrate according to the first embodiment. [Figure 5] Figures 5(a) and 5(b) are cross-sectional views illustrating some of the components for semiconductor manufacturing equipment according to the second embodiment. [Figure 6] Figures 6(a) and 6(b) are cross-sectional views illustrating some components for semiconductor manufacturing equipment. [Figure 7] This graph illustrates the stress levels of components used in semiconductor manufacturing equipment. [Figure 8] This table illustrates the evaluation of particle resistance in components for semiconductor manufacturing equipment. [Modes for carrying out the invention]

[0033] Embodiments of the present invention will be described below with reference to the drawings. In each drawing, similar components are denoted by the same reference numerals, and detailed descriptions are omitted as appropriate. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings.

[0034] (First Embodiment) Figure 1 is a cross-sectional view illustrating a semiconductor manufacturing apparatus having components for semiconductor manufacturing apparatus according to the first embodiment. The semiconductor manufacturing apparatus 100 shown in Figure 1 comprises a chamber 110, a semiconductor manufacturing apparatus component 120, and an electrostatic chuck 160. The electrostatic chuck 160 is located at the bottom of the chamber 110. Objects to be attached, such as wafers 210, are placed on the electrostatic chuck 160. In this example, the semiconductor manufacturing apparatus component 120 is located at the top of the chamber 110. For example, the semiconductor manufacturing apparatus component 120 is a top plate member of the chamber 110, located directly above the electrostatic chuck 160 and the wafers 210 inside the chamber 110.

[0035] The chamber 110 has an inner wall 111 that forms a space (region 191) where plasma is generated. The ceramic layer 20 on the surface of the semiconductor manufacturing equipment component 120 (see Figure 2) constitutes at least a part of the inner wall 111. In this example, the inner wall 111 has a lower inner wall 111b on which the electrostatic chuck 160 is placed, and an upper inner wall 111u located above the lower inner wall 111b. The ceramic layer 20 of the semiconductor manufacturing equipment component 120 is provided on at least a part of the upper inner wall 111u.

[0036] In the semiconductor manufacturing apparatus 100, high-frequency power is supplied, and a raw material gas, such as a halogen-based gas, is introduced into the chamber 110, as shown by arrow A1 in Figure 1. The raw material gas introduced into the chamber 110 then becomes plasma in the region 191 between the electrostatic chuck 160 and the semiconductor manufacturing apparatus component 120.

[0037] In this process, if the inner wall of the chamber 110 is corroded by the plasma, particles 221 may be generated. If these particles 221 adhere to the wafer 210, defects may occur in the manufactured semiconductor device. This can lead to a decrease in the yield and productivity of the semiconductor device. Therefore, plasma resistance is required for the semiconductor manufacturing equipment component 120.

[0038] Furthermore, the semiconductor manufacturing apparatus component according to this embodiment may be a component positioned at a location other than the upper part of the chamber. Also, the semiconductor manufacturing apparatus using the semiconductor manufacturing apparatus component is not limited to the example in Figure 1, but includes any semiconductor manufacturing apparatus (semiconductor processing apparatus) that performs processes such as annealing, etching, sputtering, and CVD (Chemical Vapor Deposition).

[0039] The semiconductor manufacturing apparatus components according to this embodiment can be suitably used as various components within the semiconductor manufacturing apparatus, particularly as components used in environments exposed to a corrosive, high-density plasma atmosphere. Specifically, these include chamber walls, shower plates, liners, shields, windows, edge rings, focus rings, and the like.

[0040] Figure 2 is a cross-sectional view illustrating a part of a semiconductor manufacturing equipment component according to the first embodiment. Figure 2 shows a magnified view of the area near region R shown in Figure 1. The semiconductor manufacturing equipment component 120 includes a base material 10 and a ceramic layer 20. The base material 10 has a first surface 11 and a second surface 12 opposite to the first surface 11. The first surface 11 is the surface facing inward into the chamber 110 shown in Figure 1, and the second surface 12 is the surface facing outward into the chamber 110. The base material 10 is provided with at least one hole 13. The hole 13 penetrates the base material 10 from the first surface 11 to the second surface 12.

[0041] In this example, the substrate 10 is, for example, plate-shaped (disk-shaped). The first surface 11 and the second surface 12 are, for example, flat surfaces. However, the first surface 11 and the second surface 12 may be curved surfaces. Also, a hole 13 is provided in the center of the substrate 10. For example, a component such as an injector for spraying plasma raw material gas is placed in the hole 13. The plasma raw material gas is introduced into the chamber 110 through the hole 13. However, the hole 13 does not have to be a hole for supplying plasma generation raw material gas into the chamber 110, and may be any hole that penetrates the substrate 10. Also, the hole 13 does not have to be in the center of the substrate 10, and there may be multiple holes.

[0042] Let the direction from the first surface 11 to the second surface 12 be the Z direction (first direction). Let the direction perpendicular to the Z direction be the X direction, and the direction perpendicular to both the Z and X directions be the Y direction. For example, the first surface 11 and the second surface 12 are perpendicular to the Z direction and extend along the XY plane.

[0043] The hole 13 (the inner circumferential surface 13s of the hole) has a first hole portion 13a, a second hole portion 13b, and a third hole portion 13c. When viewed along the Z direction, the hole 13 is, for example, circular. The inner circumferential surface 13s is the inner circumferential surface of the base material 10 that defines the hole 13. The inner circumferential surface 13s faces inward from the hole 13 and intersects with the XY plane.

[0044] The first hole 13a is located near the first surface 11 on the inner circumferential surface 13s and is an adjacent region to the first surface 11. The first hole 13a is continuous with the first surface 11. The first hole 13a is located between the first surface 11 and the second surface 12 in the Z direction. The first hole 13a is not parallel to the first surface 11, but is an inclined surface that intersects the first surface 11 and the Z direction. The first hole 13a may also be a surface extending parallel to the Z direction. In this example, in a cross-section parallel to the Z direction as shown in Figure 2, the first hole 13a is linear. However, in a cross-section parallel to the Z direction, the first hole 13a does not have to be linear; for example, it may be curved. When viewed along the Z direction (i.e., projected onto the XY plane), the first hole 13a is, for example, an annular shape surrounded by the first surface 11.

[0045] In this example, in a cross-section parallel to the Z-direction, the boundary 14 where the first surface 11 and the first hole 13a meet is angular. However, the first surface 11 and the first hole 13a may be smoothly connected. In other words, in the cross-section of Figure 2, the boundary 14 may be rounded and curved, and have curvature.

[0046] The second hole 13b is located in the Z direction between the first hole 13a and the second surface 12. In other words, the position of the second hole 13b in the Z direction is between the position of the first hole 13a in the Z direction and the position of the second surface 12 in the Z direction. For example, the second hole 13b is located in the vicinity of the second surface 12 on the inner circumferential surface 13s and is an adjacent region to the second surface 12. The second hole 13b may be continuous with the second surface 12. The second hole 13b extends in the Z direction and is, for example, parallel to the Z direction. The second hole 13b forms a vertical surface that is, for example, substantially perpendicular to the second surface 12. When viewed along the Z direction, the second hole 13b is, for example, an annular shape located inside the first hole 13a.

[0047] The third hole 13c is located in the Z direction between the first hole 13a and the second hole 13b. In other words, the position of the third hole 13c in the Z direction is between the position of the first hole 13a in the Z direction and the position of the second hole 13b in the Z direction. The third hole 13c is a region of the inner circumferential surface 13s that is continuous with the first hole 13a. The third hole 13c is an inclined surface that is not parallel to the first surface 11 but intersects with the first surface 11 and the Z direction. The third hole 13c may be a surface that extends in the Z direction. In this example, in a cross section parallel to the Z direction, the third hole 13c is linear. However, in a cross section parallel to the Z direction, the third hole 13c does not have to be linear; for example, it may be curved. When viewed along the Z direction, the third hole 13c is, for example, an annular shape surrounded by and in contact with the first hole 13a, with the second hole 13b located inside the third hole 13c. The third hole 13c and the second hole 13b may be continuous.

[0048] In this example, in a cross-section parallel to the Z direction, the direction in which the first hole 13a extends and the direction in which the third hole 13c extends are collinear. In other words, the angle θ1 between the third hole 13c and the Z direction is the same as the angle θ2 between the first hole 13a and the Z direction. However, angles θ1 and θ2 may be different.

[0049] Furthermore, in this example, the boundary 17 where the second hole 13b and the third hole 13c meet in a cross-section parallel to the Z direction is angular. However, the second hole 13b and the third hole 13c may be smoothly connected. In other words, in the cross-section of Figure 2, the boundary 17 may be rounded and curved, and have curvature.

[0050] Furthermore, the hole 13 (the inner circumferential surface 13s of the hole) has an inclined surface 13ac. The inclined surface 13ac is, for example, a surface that includes the first hole portion 13a and the third hole portion 13c. The inclined surface 13ac is continuous with the first surface 11 and is inclined with respect to the first surface 11 and the Z direction. The inclined surface 13ac is continuous with the vertical surface (second hole portion 13b) and connects the first surface 11 and the second hole portion 13b. In this example, the inclined surface 13ac formed by the first hole portion 13a and the third hole portion 13c is straight in a cross-section parallel to the Z direction. However, the inclined surface 13ac may be curved.

[0051] The angle θα between the first surface 11 and the inclined surface 13ac is greater than the angle θβ between the second hole 13b (vertical surface) and the inclined surface 13ac. For example, angle θα is the angle between the first surface 11 and the first hole 13a, and angle θβ is the angle between the second hole 13b and the third hole 13c.

[0052] The plasma corrosion resistance of the ceramic layer 20 is higher than that of the substrate 10. The ceramic layer 20 is provided on the substrate 10. More specifically, the ceramic layer 20 includes a first portion 21 and a second portion 22, as shown in Figure 2. The first portion 21 is provided on the first surface 11 and is in contact with the first surface 11. The first portion 21 is provided on substantially the entire first surface 11. The second portion 22 is provided on the first hole 13a and is in contact with the first hole 13a. The surfaces 21s of the first portion 21 and 22s of the second portion are in direct contact with the plasma in the chamber 110. That is, surface 21s is the surface of the first portion 21 opposite to the surface in contact with the first surface 11 and is provided to be exposed in the chamber 110. Surface 22s is the surface of the second portion 22 opposite to the surface in contact with the first hole 13a and is provided to be exposed in the chamber 110. The first surface 11 is covered by the first portion 21 and therefore does not come into direct contact with the plasma. Similarly, the first hole 13a is covered by the second portion 22 and therefore does not come into direct contact with the plasma. In other words, the first surface 11 and the first hole 13a are covered with the ceramic layer 20, and the ceramic layer 20 is configured to be exposed to the plasma. Surface 21s is, for example, a plane parallel to the XY plane. Surface 21s may also be a curved surface. Surface 22s is an inclined surface that intersects surface 21s and the Z direction. Surface 21s may also be a surface extending in the Z direction.

[0053] The ceramic layer 20 is not provided on the second surface 12, the second hole 13b, and the third hole 13c. In other words, in this example, the region of the inner circumferential surface 13s of the hole 13 where the ceramic layer 20 is provided is the first hole 13a, and the regions where the ceramic layer 20 is not provided are the second hole 13b and the third hole 13c. The third hole 13c is in contact with the end of the second portion 22. The second hole 13b and the third hole 13c are exposed to the plasma in the chamber 110 and are in direct contact with the plasma. The second hole 13b and the third hole 13c are not covered with the ceramic layer 20.

[0054] The arithmetic mean height Sa of surface 21s of part 1 21 is less than the arithmetic mean height Sa of surface 22s of part 22. The arithmetic mean height Sa (surface roughness) can be evaluated by the method described later. For example, the surface roughness of part 1 21 (roughness of surface 21s) is less than the surface roughness of part 22 22 (roughness of surface 22s).

[0055] As mentioned above, in order to reduce particles, plasma resistance is required for semiconductor manufacturing equipment components that come into contact with plasma. Conventionally, a method has been used in which the surface of semiconductor manufacturing equipment components is coated with a film (layer) that has excellent plasma resistance. However, even when the non-porous parts, which make up the majority of semiconductor manufacturing equipment components (e.g., top plate components), are coated with a highly plasma-resistant film (e.g., Y2O3), there is a risk that the requirements for particle reduction may not be fully met these days. For this reason, control of particles from pores is also required. Examples of particles from pores include particles generated when a part of the film provided in the pores detaches, and particles from components placed in the pores (e.g., injectors).

[0056] In contrast, in this embodiment, a ceramic layer 20 is provided on the first surface 11 and the first hole 13a of the substrate 10, and the arithmetic mean height Sa of the surface 21s of the first portion 21 on the first surface 11 is smaller than the arithmetic mean height Sa of the surface 22s of the second portion 22 on the first hole 13a. This makes it possible to reduce the generation or impact of particles.

[0057] For example, by having a relatively small arithmetic mean height Sa (surface roughness) of the surface 21s of the first part 21 that is in contact with the corrosive plasma, the generation of particles from the first part 21 can be effectively suppressed. That is, for example, the first part has a smooth structure, which can suppress the generation of cracks and particles originating from irregularities on the first part 21. For example, it can suppress the corrosion of the first part 21 by the plasma, and the detachment of some of it from the ceramic layer 20 to become particles.

[0058] Furthermore, the relatively large arithmetic mean height Sa (surface roughness) of the surface 22s of the second portion 22 on the first hole 13a can suppress the generation or influence of particles from the hole 13. For example, since the second portion 22 is provided on the first hole 13a, it is thought that the influence of the electric field may be greater on the second portion 22 than on the first portion 21. In other words, when the first portion 21 provided on the first surface 11 is exposed to plasma, the electric field may be more concentrated on the second portion 22 on the first hole 13a because it is near the edge of the hole 13. In areas where the electric field is concentrated, the electric field strength is large, and the concentration of plasma leads to greater damage from the plasma. There is a risk that the damaged portion will detach from the ceramic layer 20 and generate particles. In contrast, in this embodiment, the relatively large arithmetic mean height Sa of the surface 22s of the second portion 22 increases the surface area of ​​the second portion 22, which can mitigate the concentration of the electric field.

[0059] Furthermore, because the arithmetic mean height Sa of the surface 22s of the second portion 22, which is provided near the end (near the exit) of the hole 13, is relatively large, particles generated from the hole 13 can be captured by the second portion 22, thereby more effectively suppressing the effects of particles.

[0060] Furthermore, when the plasma generation gas passes through the hole 13, the temperature around the hole changes due to the gas injection. As a result, the thermal stress in the second part 22 may become higher than the thermal stress in the first part 21. This thermal stress may cause cracks and particles to form in the second part 22. However, because the arithmetic mean height Sa of the surface 22s of the second part 22 is relatively large, the surface area of ​​the second part 22 is increased, which enhances the heat dispersion (heat dissipation) effect of the second part 22. This suppresses the formation of cracks and particles in the second part 22.

[0061] For example, the surface roughness of the second part 22 is preferably 2 to 10 times, more preferably 5 times, the surface roughness of the first part 21. The arithmetic mean height Sa of the surface 22s of the second part 22 is preferably 2 to 10 times, more preferably 5 times, the arithmetic mean height Sa of the surface 21s of the first part 21. The arithmetic mean height Sa of the surface 22s of the second part 22 is, for example, less than 0.5 micrometers (μm), and for example, 0.005 μm or more. The arithmetic mean height Sa of the surface 21s of the first part 21 is, for example, less than 0.1 μm, and for example, 0.001 μm or more. With such a configuration, the generation or influence of particles can be more reliably reduced.

[0062] For example, the surface roughness of the third hole 13c is greater than the surface roughness of the first part 21 and greater than the surface roughness of the second part 22. For example, the arithmetic mean height Sa of the third hole 13c is greater than the arithmetic mean height Sa of the surface 21s of the first part 21 and greater than the arithmetic mean height Sa of the surface 22s of the second part 22.

[0063] As already mentioned, in this example, the ceramic layer 20 is not provided on the third hole 13c, and the inner wall of the hole 13 is exposed. In other words, the third hole 13c is the boundary between the ceramic layer 20 and the inner wall of the hole 13, and is the substrate edge that comes into contact with the plasma. By making the arithmetic mean height Sa (surface roughness) of such a substrate edge (third hole 13c) relatively large, the surface area of ​​the substrate edge is increased, and the concentration of the electric field at the substrate edge can be mitigated. This makes it possible to suppress plasma damage caused by electric field concentration at the substrate edge and suppress the generation of particles from the substrate edge.

[0064] For example, the surface roughness of the third hole 13c is preferably greater than twice the surface roughness of the first portion 21. It is also preferable that the surface roughness of the third hole 13c be 10 times or less the surface roughness of the first portion 21. The arithmetic mean height Sa of the third hole 13c is preferably greater than twice the arithmetic mean height Sa of the surface 21s of the first portion 21. It is also preferable that the arithmetic mean height Sa of the third hole 13c be 10 times or less the arithmetic mean height Sa of the surface 21s of the first portion 21. With such a configuration, the generation or influence of particles can be reduced more reliably.

[0065] Furthermore, the surface roughness of the third hole 13c may be greater than the surface roughness of the first part 21 and less than the surface roughness of the second part 22. For example, the arithmetic mean height Sa of the third hole 13c may be greater than the arithmetic mean height Sa of the surface 21s of the first part 21 and less than the arithmetic mean height Sa of the surface 22s of the second part 22.

[0066] In the third hole 13c, the plasma and the substrate 10 are in direct contact, which can easily lead to the generation of particles from the substrate 10. In contrast, in this embodiment, the third hole 13c is positioned further from the first surface 11 and the second surface 12 than the first hole 13a and the second hole 13b. Furthermore, if the arithmetic mean height Sa of the third hole 13c is smaller than the arithmetic mean height Sa of the surface of the second portion 22, the generation of particles from the third hole 13c can be further reduced. That is, for example, the generation of cracks and particles originating from irregularities in the third hole 13c can be suppressed. It can also be suppressed that a part of the third hole 13c detaches from the substrate 10 and becomes particles.

[0067] As mentioned above, if the substrate 10 is corroded by contact with plasma, fine particles may be generated from the substrate 10, potentially reducing the yield of the manufactured semiconductor devices. Therefore, the surface of the substrate 10 that comes into contact with the plasma is covered with a ceramic layer that has higher plasma corrosion resistance than the substrate 10. The holes 13 provided in the substrate 10 have, for example, vertical surfaces perpendicular to the first and second surfaces of the substrate 10. However, some of the plasma may seep into the holes 13 and corrode the inner walls of the holes 13, generating particles from the holes 13. Therefore, a method of providing a ceramic layer with high plasma corrosion resistance on the inner walls of the holes 13 (for example, the vertical surfaces) can be considered. However, for example, the ceramic layer inside the holes 13 may be relatively fragile, and if the fragile ceramic layer is corroded by the plasma, particles will be generated. In addition, plasma concentration may easily occur on the inclined surfaces between the first surface 11 and the second hole 13b (first hole 13a and third hole 13c).

[0068] In contrast, in this embodiment, the second portion 22 of the ceramic layer 20 is provided in the first hole 13a, which is relatively close to the first portion 21 that is in contact with the plasma, of the inclined surface 13ac formed by the first hole 13a and the third hole 13c. This effectively suppresses the generation of particles from the first hole 13a. On the other hand, the third hole 13c, which is relatively far from the first portion 21, is in contact with the plasma. That is, the third hole 13c, which is farther from the first portion 21 and has a relatively low risk of plasma corrosion compared to the first hole 13a, is not covered with the ceramic layer 20, and the substrate 10 is in direct contact with the plasma in the third hole 13c. This effectively suppresses the formation of a ceramic layer with inferior properties in the third hole 13c and the generation of particles from that ceramic layer.

[0069] Furthermore, if the inclined surface 13ac is curved in a cross-section parallel to the Z direction, the electric field may concentrate on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac, potentially generating particles. In contrast, if the inclined surface 13ac is straight in a cross-section parallel to the Z direction, the electric field concentration on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac can be further mitigated.

[0070] Furthermore, for example, in the ceramic layer 20, the second portion 22 is thinner than the first portion 21. That is, the thickness T22 of the second portion 22 is smaller than the thickness T21 of the first portion 21. Because the first portion 21, which is more easily exposed to plasma, is thicker than the second portion 22, the generation of particles from the first surface 11 can be further suppressed. On the other hand, because the second portion 22, which is less exposed to plasma than the first portion 21, is relatively thin, for example, the collapse of the ceramic layer 20 in the second portion 22 can be suppressed, and the generation of particles can be further suppressed. For example, by making the film thickness in the second portion 22 thinner, strain and internal stress in the film can be relieved, and the collapse of the film can be suppressed.

[0071] The thickness of the ceramic layer 20 is the distance from the surface of the substrate 10 to the surface of the ceramic layer 20. Specifically, the thickness of the ceramic layer 20 (thickness T11 and T22) is determined as follows: As shown in Figure 2, the semiconductor manufacturing equipment component 120 is cut parallel to the Z direction, and the thickness of the ceramic layer 20 is determined by observing the fracture surface using a scanning electron microscope (SEM). For example, the thickness T21 of the first portion 21 is the length from the first surface 11 to the surface 21s, along the direction perpendicular to the first surface 11. For example, the thickness T22 of the second portion 22 is the length from the first hole 13a to the surface 22s, along the direction perpendicular to the first hole 13a. For example, a HITACHI S-5500 may be used as the SEM, and the SEM observation conditions may be set to a magnification of 5000x and an acceleration voltage of 15kV. If there is variation in thickness in the cross-sectional image, measurements are taken at multiple locations and the average value is calculated. A known method can be used to make the thickness T22 of the second part 22 smaller than the thickness T21 of the first part 21, such as varying the film formation time (making the film formation time for the second part shorter than that for the first part) or varying the amount of polishing (making the amount of polishing for the second part greater than that for the first part).

[0072] Furthermore, the edge portion (boundary 14) formed by the first surface 11 and the inclined surface 13ac is located near the plasma irradiation surface (surface 21s). Therefore, plasma tends to concentrate near this edge portion (ceramic layer 20 on the edge portion). In contrast, in this embodiment, the angle θα between the first surface 11 and the inclined surface 13ac is larger than the angle θβ between the inclined surface 13ac and the vertical surface (second hole portion 13b). The relatively large angle θα mitigates plasma concentration near the edge portion formed by the first surface 11 and the inclined surface 13ac, thereby suppressing particle generation. On the other hand, if the angle θβ is large, plasma is more likely to penetrate into the hole 13. In contrast, the relatively small angle θβ effectively suppresses plasma from penetrating into the hole 13.

[0073] Furthermore, when angle θα is greater than angle θβ, it is easier to increase the length of the second hole 13b in the Z direction. For example, the length Ln shown in Figure 6(a), which will be described later, is longer than the length Ln shown in Figure 6(b). Also, for example, in Figure 2, if angle θα is further increased while the inclined surface 13ac remains straight, without changing the thickness of the substrate 10 (the positions of the first surface 11 and the second surface 12 in the Z direction) and the diameter of the hole 13 (the positions of the boundaries 14 and 17 in the X direction), the position of the boundary 17 moves downward, and the second hole 13b becomes longer in the Z direction. The flow (direction) of the raw material gas of the plasma flowing into the chamber from the hole 13 is restricted, for example, by the second hole 13b, so a longer second hole 13b makes it easier to stabilize the flow of the raw material gas. In addition, when fixing a unit such as an injector to the second hole 13b, a longer second hole 13b makes it easier to attach the unit and suppresses the unit from being exposed to the plasma.

[0074] Boundaries 14 and 17 are preferably chamfered. This helps to further mitigate plasma concentration in the ceramic layer 20 on boundary 14 and at boundary 17.

[0075] The angle θα is, for example, 150° to 180°, preferably 160° to 180°. This further reduces plasma concentration near the edge formed by the first surface 11 and the inclined surface 13ac, and further suppresses particle generation.

[0076] The angle θβ is, for example, greater than 90° and less than or equal to 120°, preferably greater than 90° and less than or equal to 105°. This makes it possible to more effectively suppress the penetration of plasma into the hole.

[0077] For example, the density of the second part 22 is higher than that of the first part 21. Also, for example, the hardness of the second part 22 is higher than that of the first part 21.

[0078] During maintenance and handling of semiconductor manufacturing equipment components, the area around hole 13 (and through hole 313 described later) may come into physical contact with other components (for example, jigs such as pins or sponge-like cleaning pads). Such physical contact may cause wear, damage, or peeling around hole 13 (and through hole 313), potentially generating particles. For example, during handling of semiconductor manufacturing equipment components, jigs such as positioning pins may be inserted into hole 13. The second portion 22 provided in hole 13 is more likely to come into physical contact with such jigs than the first portion 21. Also, for example, during maintenance of semiconductor manufacturing equipment components, surface cleaning is performed on the first surface 11, and the first portion 21 and the second portion 22 may come into contact with components such as cleaning pads. In this case, due to the shape of hole 13, the force applied to the second portion 22 provided in hole 13 by the cleaning pad may be greater than the force applied to the first portion 21 on the first surface 11 by the cleaning pad. The contact area between the cleaning pad and the semiconductor manufacturing equipment component is generally smaller in the second portion 22, which is located on an inclined surface, than in the first portion 21, which is located on a flat surface. Therefore, when the force applied to the cleaning pad is constant, the force received per unit area is greater in the second portion 22 due to the smaller contact area.

[0079] In contrast, the relatively high density of the second portion 22 suppresses damage and delamination to the second portion 22 due to physical contact during maintenance or handling of semiconductor manufacturing equipment components. Therefore, particle generation can be further suppressed. Furthermore, the relatively high hardness of the second portion 22 suppresses damage and delamination to the second portion 22 due to physical contact during maintenance or handling of semiconductor manufacturing equipment components. Therefore, particle generation can be further suppressed.

[0080] Figures 3(a) to 3(c) are cross-sectional views illustrating a part of another semiconductor manufacturing equipment component according to the first embodiment. The semiconductor manufacturing equipment components 120a to 120c shown in Figures 3(a) to 3(c) differ from the semiconductor manufacturing equipment component 120 described in relation to Figures 1 and 2 in the shape of the hole 13. Otherwise, the semiconductor manufacturing equipment components 120a to 120c are the same as the semiconductor manufacturing equipment component 120. In the semiconductor manufacturing equipment component 120a shown in Figure 3(a), the first hole 13a and the third hole 13c are linear in a cross-section parallel to the Z direction. In Figure 3(a), the direction in which the first hole 13a extends and the direction in which the third hole 13c extends are not on the same line, but are non-parallel. For example, the angle θ1 between the third hole 13c and the Z direction is smaller than the angle θ2 between the first hole 13a and the Z direction.

[0081] In the semiconductor manufacturing equipment component 120a, the boundary 15 where the first hole 13a and the third hole 13c meet in a cross-section parallel to the Z direction is angular. However, in the cross-section shown in Figure 3(a), the boundary 15 may be rounded and curved, and have curvature.

[0082] In the semiconductor manufacturing equipment component 120b shown in Figure 3(b), the third hole 13c is straight and the first hole 13a is curved in a cross-section parallel to the Z direction. For example, the first hole 13a has a first region 16a that is in contact with the first surface 11 and a second region 16b that is in contact with the third hole 13c. In the cross-section of Figure 3(b), the first region 16a and the second region 16b are straight. The first region 16a and the second region 16b may be curved.

[0083] In the example shown in Figure 3(b), the direction in which the first region 16a extends and the direction in which the second region 16b extends are not collinear but non-parallel. For example, the angle θ3 between the second region 16b and the Z direction is smaller than the angle θ4 between the first region 16a and the Z direction. Also, in the example shown in Figure 3(b), the direction in which the second region 16b extends and the direction in which the third hole 13c extends are collinear.

[0084] In the semiconductor manufacturing equipment component 120b, the boundary 16c where the first region 16a and the second region 16b meet in a cross-section parallel to the Z direction is angular. However, in the cross-section of Figure 3(b), the boundary 16c may be rounded and curved, and have curvature.

[0085] In the semiconductor manufacturing equipment component 120c shown in Figure 3(c), the first hole 13a has a first region 16a and a second region 16b, and the boundary 16c between them is angular. Also, the boundary 15 between the first hole 13a and the third hole 13c is angular. Boundaries 15 and 16c may be rounded and curved, and have curvature. As described above, the cross-sectional shape of the hole 13 may be bent or curved as appropriate.

[0086] In evaluating the arithmetic mean height Sa, a laser microscope is used to determine the arithmetic mean height Sa of the surface being evaluated. This arithmetic mean height Sa is defined in the international standard ISO 025178 (JIS B 0681) concerning three-dimensional surface properties.

[0087] The laser microscope used will be the "VK-X1000 / KEYENCE" model. The objective lens magnification will be set to 1000x. The S-filter will be 2.5 μm or 0.8 μm, and the L-filter will be set to 0.5 mm.

[0088] The arithmetic mean height is an extension of the two-dimensional arithmetic mean roughness Ra to three dimensions, and is a three-dimensional roughness parameter (three-dimensional height direction parameter). Specifically, the arithmetic mean height Sa is the volume of the area enclosed by the surface shape curve and the mean plane divided by the measured area. If the mean plane is the xy plane, the vertical direction is the z axis, and the measured surface shape curve is z(x, y), then the arithmetic mean height Sa is defined by the following equation. Here, "A" in equation (1) is the measured area.

number

[0089] The density of the ceramic layer 20 indicates the size of the (nano-level) gaps between the particles constituting the film. The density of the ceramic layer 20 (densities of the first portion 21, the second portion 22, and the third portion 23 described later) can be evaluated by the brightness Sa calculated by, for example, the method described in Japanese Patent Publication No. 6597922. In the embodiment, high density corresponds to low brightness Sa.

[0090] Furthermore, in this embodiment, the surface hardness of the ceramic layer 20 and the substrate 10 (hardness of the first portion 21, the second portion 22, the first pore region 313a and the third pore region 313c, etc., as described later) can be evaluated by the method specified in ISO 14577. Specifically, hardness measurement is performed on the surface to be evaluated by a nanoindentation test. A Berkovich indenter is used, the indentation depth is fixed at 200 nm, and the indentation hardness (HIT) is measured. A surface excluding scratches and dents is selected as the measurement location for HIT on the surface to be evaluated. More preferably, the surface to be evaluated is a polished smooth surface. The number of measurement points is at least 25. The average value of the 25 or more measured HIT points is taken as the hardness in this embodiment. Other test methods and analysis methods, procedures for verifying the performance of the test apparatus, and conditions required for standard reference samples are in accordance with ISO 14577.

[0091] In this embodiment, high plasma corrosion resistance corresponds to a small arithmetic mean height Sa of the surface after the standard plasma resistance test. The standard plasma resistance test is performed, for example, as follows: Plasma is irradiated onto the surface of the object to be evaluated, such as a ceramic layer or substrate. An inductively coupled plasma reactive ion etching apparatus (Muc-21 Rv-Aps-Se / manufactured by Sumitomo Precision Products Co., Ltd.) is used as the plasma etching apparatus. The plasma etching conditions are as follows: ICP output of 1500W, bias output of 750W, mixed gas of 100ccm of CHF3 gas and 10ccm of O2 gas as the process gas, pressure of 0.5Pa, and plasma etching time of 1 hour. The state of the surface of the object to be evaluated after plasma irradiation is photographed using a laser microscope. Specifically, a laser microscope "OLS4500 / Olympus" is used, with an MPLAPON100xLEXT objective lens (numerical aperture 0.95, working distance 0.35 mm, focusing spot diameter 0.52 μm, measurement area 128 × 128 μm) and a magnification of 100x. The λc filter for removing waviness components is set to 25 μm. Measurements are taken at three arbitrary locations, and the average value is taken as the arithmetic mean height Sa. In addition, the international standard ISO25178 for three-dimensional surface properties is referred to as appropriate. In one aspect of the present invention, the arithmetic mean height Sa of the surface of the ceramic layer or substrate after the "standard plasma resistance test" is preferably 0.060 or less, and more preferably 0.030 or less.

[0092] The method for calculating angles θα and θβ in this specification will be explained with reference to Figures 4(a) to 4(c). Figures 4(a) to 4(c) are cross-sectional views illustrating a portion of the substrate according to the first embodiment.

[0093] The substrate 10a shown in Figure 4(a) is the same as the substrate 10 described with respect to Figure 2. The first surface 11 extends along the XY plane. The second hole 13b extends along the Z direction. In this example, the inclined surface 13ac connecting the first surface 11 and the second hole 13b is linear in a cross-section parallel to the Z direction. In a cross-section parallel to the Z direction, the inclined surface 13ac extends linearly from the end e1 of the first surface 11 to the end e2 of the second hole 13b. End e1 is the point where the first surface 11 is in contact with the inclined surface 13ac, and end e2 is the point where the second hole 13b is in contact with the inclined surface 13ac.

[0094] In a cross-section parallel to the Z direction, if the portion P1 of the inclined surface 13ac that is continuous with the first surface 11 is straight, then angle θα is the angle between the first surface 11 and portion P1. In a cross-section parallel to the Z direction, if the portion P2 of the inclined surface 13ac that is continuous with the second hole 13b is straight, then angle θβ is the angle between the second hole 13b and portion P2. In the example of Figure 4(a), angle θα is the angle formed by the first surface 11 and the line segment connecting end e1 and end e2, and angle θβ is the angle formed by the second hole 13b and the line segment connecting end e1 and end e2. Note that angles θα and θβ are angles on the inside of the base material 10 and are 180° or less.

[0095] As shown in Figures 4(b) and 4(c), when portions P1 and P2 are curved in a cross-section parallel to the Z direction, angles θα and θβ are calculated as follows. The base material 10b shown in Figure 4(b) differs from the base material 10a in the shape of the inclined surface 13ac. In base material 10b, in a cross-section parallel to the Z direction, the portion P1 of the inclined surface 13ac that is continuous with the first surface 11 is curved, and the portion continuous with portion P1 is straight. In this case, angle θα is the angle formed by the first surface 11 and line segment L1, as shown in Figure 4(b). Line segment L1 is a line segment connecting end e1 and end e4, and end e4 is the endpoint of the straight portion of the inclined surface 13ac that is continuous with portion P1. Also, in base material 10b, in a cross-section parallel to the Z direction, the portion P2 of the inclined surface 13ac that is continuous with the second hole 13b is curved, and the portion continuous with portion P2 is straight. In this case, angle θβ is the angle formed by the second hole 13b and line segment L2, as shown in Figure 4(b). Line segment L2 is the segment connecting end e2 and end e3, and end e3 is the endpoint of the linear portion of the inclined surface 13ac that is continuous with portion P2. In this example, the linear portion P3 is the portion of the inclined surface 13ac between portion P1 and portion P2, and end e3 of portion P3 is the point where portion P3 is tangent to portion P1, and end e4 of portion P3 is the point where portion P3 is tangent to portion P2.

[0096] The base material 10c shown in Figure 4(c) differs from the base material 10a in the shape of the inclined surface 13ac. In the base material 10c, the inclined surface 13ac is curved in a cross-section parallel to the Z direction. In this case, angle θα is the angle formed by the first surface 11 and the line segment L3 connecting end e1 and end e2, as shown in Figure 4(c). Also, in this case, angle θβ is the angle formed by the second hole 13b and the line segment L3, as shown in Figure 4(c).

[0097] The base material 10 may be metal, ceramics, glass, plastic, or a combination thereof. Preferably, the base material 10 is metal or ceramics. For metals, aluminum or aluminum alloys with anodized (anodized) surface treatment can be used. For ceramics, aluminum oxide (alumina), aluminum nitride, etc., can be used.

[0098] The ceramic layer 20 includes, for example, polycrystalline ceramics. The ceramic layer 20 is a layer mainly composed of ceramics. The ceramic layer 20 includes at least one selected from the group consisting of, for example, oxides of rare earth elements, fluorides of rare earth elements, and oxyfluorides of rare earth elements. Examples of the rare earth element include at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. More specifically, the ceramic layer 20 is an oxide of yttrium (Y2O3, Y ,

[0099] O β (non-stoichiometric composition)), yttrium oxyfluoride (YOF, Y5O4F7, Y6O5F8, Y7O6F9, and Y 17 O 14 F 23 ), (YO 0.826 F 0.17 )F 1.174 , YF3, Er2O3, Gd2O3, Nd2O3, Y3Al5O 12 , Y4Al2O9, Y2O3-ZrO2, Er3Al5O 12 , Gd3Al5O 12 , Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O 12 , Nd4Al2O9, and NdAlO3, and includes at least one selected from the group consisting of. The ceramic layer 20 may include at least one selected from the group consisting of Fe, Cr, Zn, and Cu. For example, the ceramic layer 20 includes at least one of fluorine and oxygen and yttrium. The ceramic layer 20 is mainly composed of, for example, yttrium oxide (Y2O3), yttrium fluoride (YF3), or yttrium oxyfluoride (YOF). As used herein, the "main component" means that the component is contained in an amount exceeding 50%, preferably 70% or more, more preferably 90% or more, still more preferably 95% or more, and most preferably 100%. The "%" mentioned here is, for example, mass%.

[0099] Alternatively, the ceramic layer 20 may be made of materials other than oxides, fluorides, or oxyfluorides. Specifically, examples include compounds containing elements of Cl or Br (chlorides, bromides).

[0100] In the semiconductor manufacturing equipment component 120, the ceramic layer 20 may be composed solely of polycrystalline ceramics, or it may contain both polycrystalline ceramics and amorphous ceramics.

[0101] In the ceramic layer 20, the average crystallite size of the polycrystalline ceramic is 3 nm or more and 50 nm or less. Preferably, the upper limit is 30 nm, more preferably 20 nm, and even more preferably 15 nm. The preferred lower limit is 5 nm.

[0102] The "average crystallite size" can be determined using the following method. First, a transmission electron microscope (TEM) image is taken at a magnification of 400,000x or higher. The average crystallite size is calculated from the average diameter of 15 crystallites approximated by a circular pattern in this image. At this time, if the sample thickness during FIB processing is sufficiently thinned to about 30 nm, the crystallites can be identified more clearly. The imaging magnification can be appropriately selected within a range of, for example, 400,000x to 2,000,000x.

[0103] In the manufacturing procedure for semiconductor manufacturing equipment components according to the embodiment, first, a substrate 10 having holes 13 is prepared. Then, the shape of the substrate 10 is adjusted by appropriate means. For example, the substrate 10 is subjected to at least one of blasting, physical polishing, chemical-mechanical polishing, lapping, and chemical polishing. This makes it possible to control the arithmetic mean height Sa (surface roughness) and shape of the first surface 11 and the holes 13 (first hole portion 13a, second hole portion 13b, and third hole portion 13c).

[0104] Subsequently, a ceramic layer 20 is formed on the substrate 10. After forming the ceramic layer 20, a final polishing is performed. At least one of blasting, physical polishing, chemical-mechanical polishing, lapping, and chemical polishing can be used for polishing. This allows for control of the arithmetic mean height Sa and shape of, for example, the ceramic layer 20 (surface 21s of the first portion 21 and surface 22s of the second portion 22), the second hole 13b, and the third hole 13c.

[0105] Furthermore, methods such as thermal spraying, CVD, ALD (Atomic Layer Deposition), PVD (Physical Vapor Deposition), or aerosol deposition can be used to form the ceramic layer 20 on the substrate 10.

[0106] When forming a ceramic layer 20 on a substrate 10, for example, when using aerosol deposition, thermal spraying, CVD, or PVD, a mask such as tape may be applied to the portion that will become the third hole 13c before the film to be formed as the ceramic layer 20. After film formation, the mask is removed to form the second hole 13b and the third hole 13c, which are exposed and not covered by the ceramic layer 20. Alternatively, after film formation without applying a mask, a portion of the film may be removed by polishing or the like to form the exposed second hole 13b and the third hole 13c.

[0107] Depending on the method of forming the ceramic layer 20, it may be more difficult to form the ceramic layer 20 on the third hole portion 13c, which is the inner circumferential surface 13s of the hole 13, compared to the first surface 11. That is, for example, in methods such as PVD, thermal spraying, and aerosol deposition, where raw material particles are supplied to the substrate 10 from the first surface 11 side (for example, by impact) to form the ceramic layer, the third hole portion 13c is far from the first surface 11 and is inclined with respect to the first surface 11, so the raw material particles may not reach the third hole portion 13c easily, or they may reach the third hole portion 13c in a state other than a plane. In such cases, if the ceramic layer 20 is formed on the third hole portion 13c, the quality of the ceramic layer 20 formed on the third hole portion 13c (e.g., density, hardness, etc.) may be lower than the quality of the ceramic layer 20 formed on the first surface 11. A portion of the low-quality and brittle ceramic layer 20 may be more easily detached from the substrate and may become a source of particles. By not providing the ceramic layer 20 in the third hole 13c, the generation of particles can actually be reduced.

[0108] As in the third hole 13c, it can be difficult to form a ceramic layer on the inner wall (vertical surface) of a hole 13. When a ceramic layer is provided inside a hole 13, the properties of the ceramic layer inside the hole 13 (e.g., density and film thickness) may be inferior to those of the ceramic layer provided on the first surface of the substrate, and particles may be generated when the fragile ceramic layer inside the hole 13 is corroded by plasma. Furthermore, for example, the mechanical properties of a ceramic layer with inferior properties (e.g., strength against external forces, hardness, or toughness) are inferior to those of the substrate. Therefore, there is a risk of particles being generated by physical impact or contact during handling and maintenance of semiconductor manufacturing equipment components.

[0109] For example, when forming a ceramic layer 20 by PVD, thermal spraying, or aerosol deposition, film formation is difficult in the vertical second pore portion 13b. Therefore, by making the second pore portion 13b long, film formation inside the pore can be suppressed.

[0110] In the aerosol deposition method, fine particles, which are the material, are impacted onto a substrate, and the impact of the collision causes the particles to bond on the substrate, forming a layered structure. On the other hand, in the aerosol deposition method, if the surface of the substrate that the fine particles impact is rough, the particles will not bond and accumulate on the substrate, making it difficult to form a layered structure. In this embodiment, the arithmetic mean height Sa of the third hole 13c is relatively large, which makes it possible to more reliably suppress the formation of a fragile ceramic layer on the third hole 13c by the aerosol deposition method. Therefore, the generation of particles can be suppressed.

[0111] Thus, when using the aerosol deposition method, the formation of a ceramic layer on the third pore 13c can be suppressed, for example, by controlling the arithmetic mean height Sa of the third pore 13c. Since the aerosol deposition method allows for the omission of processes such as masking before film formation, it facilitates the manufacturing of components for semiconductor manufacturing equipment.

[0112] The "aerosol deposition method" is a method in which an "aerosol" containing fine particles of brittle material dispersed in a gas is sprayed from a nozzle toward a substrate, causing the fine particles to collide with the substrate, such as metal, glass, ceramics, or plastic. The impact of this collision causes deformation and fracture of the brittle material fine particles, which are then joined together, directly forming a layered structure (also called a film structure) on the substrate consisting of the constituent materials of the fine particles.

[0113] In this example, an aerosol, which is a mixture of fine particles of a ceramic material with excellent particle resistance, such as yttria, and a gas, is sprayed onto the substrate 10 to form a layered structure (ceramic layer 20).

[0114] The aerosol deposition method allows for the formation of layered structures at room temperature without the need for heating or cooling methods, and enables the creation of layered structures with mechanical strength equivalent to or greater than that of fired bodies. Furthermore, by controlling the conditions for impacting the fine particles, as well as the shape and composition of the fine particles, it is possible to vary the density, microstructure, mechanical strength, and electrical properties of the layered structures in diverse ways.

[0115] In this specification, "polycrystalline" refers to a structure formed by the bonding and accumulation of crystalline particles. A crystalline particle constitutes a crystal substantially by itself. The diameter of a crystalline particle is usually 5 nanometers (nm) or larger. However, if fine particles are incorporated into a structure without being crushed, the crystalline particles are considered polycrystalline.

[0116] Furthermore, in this specification, "fine particles" means particles with an average particle size of 5 micrometers (μm) or less, as identified by particle size distribution measurement or scanning electron microscopy, when the primary particles are dense particles. When the primary particles are porous particles that are easily broken by impact, it means particles with an average particle size of 50 μm or less.

[0117] Furthermore, in this specification, "aerosol" refers to a solid-gas mixed phase in which the aforementioned fine particles are dispersed in a gas such as helium, nitrogen, argon, oxygen, dry air, or a mixture of these gases. While it may include some "aggregates," it essentially refers to a state in which fine particles are dispersed individually. The gas pressure and temperature of the aerosol are arbitrary, but for the formation of a layered structure, it is desirable that the concentration of fine particles in the gas be in the range of 0.0003 mL / L to 5 mL / L at the time of discharge, when the gas pressure is converted to 1 atmosphere and the temperature to 20 degrees Celsius.

[0118] The aerosol deposition process is typically carried out at room temperature, and one of its characteristics is that layered structures can be formed at temperatures well below the melting point of the particulate material, i.e., below several hundred degrees Celsius. In this specification, "room temperature" refers to a temperature significantly lower than the sintering temperature of the ceramics, essentially an environment between 0 and 100°C, with room temperature of around 20°C ± 10°C being more common.

[0119] The fine particles that make up the powder used as raw material for layered structures are mainly brittle materials such as ceramics and semiconductors. Fine particles of the same material can be used individually or mixed with fine particles of different particle sizes, and it is also possible to mix or combine fine particles of different brittle materials. Furthermore, it is possible to mix fine particles of metallic materials or organic materials with the brittle material fine particles or to coat the surface of the brittle material fine particles with them. In these cases as well, the main component forming the layered structure is the brittle material.

[0120] In composite structures formed by this method, when crystalline brittle material nanoparticles are used as raw materials, the layered structure portion of the composite structure is a polycrystalline material whose crystal particle size is smaller than that of the raw material nanoparticles, and in many cases, the crystals are substantially oriented. Furthermore, there are substantially no grain boundary layers consisting of glass layers at the interfaces between the brittle material crystals. In many cases, the layered structure portion of the composite structure forms an "anchor layer" that bites into the surface of the substrate (substrate 10 in this example). The layered structure with this anchor layer is formed to adhere firmly to the substrate with extremely high strength.

[0121] The layered structures formed by the aerosol deposition method are distinctly different from so-called "compacted powders," where fine particles are packed together under pressure and maintain their shape through physical adhesion; they possess sufficient strength.

[0122] In the aerosol deposition method, the fact that incoming brittle material microparticles undergo fracture and deformation on the substrate can be confirmed by measuring the crystallite (crystal particle) size of the brittle material microparticles used as raw material and the formed brittle material structure using methods such as X-ray diffraction. In other words, the crystallite size of the layered structure formed by the aerosol deposition method is smaller than the crystallite size of the raw material microparticles. At the "slip surfaces" and "fracture surfaces" formed when the microparticles fracture and deform, "new surfaces" are formed where atoms that were originally inside the microparticles and bonded to other atoms are exposed. It is thought that these new surfaces, which have high surface energy and are active, bond with the surfaces of adjacent brittle material microparticles, similarly adjacent new surfaces of brittle material, or the surface of the substrate, thereby forming the layered structure.

[0123] Furthermore, if a suitable number of hydroxyl groups are present on the surface of the fine particles in the aerosol, it is conceivable that mechanochemical acid-base dehydration reactions may occur due to local shear stress generated between the particles themselves or between the particles and the structure during collisions, leading to bonding between them. The continuous application of external mechanical impact forces would continuously generate these phenomena, and repeated deformation and crushing of the fine particles would lead to the progression of bonding and densification, resulting in the growth of a layered structure made of brittle material.

[0124] For example, when the ceramic layer 20 is formed by the aerosol deposition method, the ceramic layer 20 has a smaller crystallite size and a denser microstructure compared to ceramic firing bodies or thermal spray films. As a result, the particle resistance of the semiconductor manufacturing equipment component 120 according to the embodiment is higher than that of firing bodies or thermal spray films. Furthermore, the probability that the semiconductor manufacturing equipment component 120 according to the embodiment will become a particle source is lower than the probability that firing bodies or thermal spray films will become particle sources.

[0125] An example of an apparatus used to manufacture a semiconductor manufacturing apparatus component 120 according to the present invention by, for example, the aerosol deposition method will be described. The apparatus used in the aerosol deposition method consists of a chamber, an aerosol supply unit, a gas supply unit, an exhaust unit, and piping. Inside the chamber, for example, a stage on which a substrate 10 is placed, a drive unit, and a nozzle are arranged. The drive unit can change the relative positions of the substrate 10 placed on the stage and the nozzle. At this time, the distance between the nozzle and the substrate 10 may be kept constant or variable. In this example, the drive unit is shown to drive the stage, but the drive unit may also drive the nozzle. The driving direction is, for example, the XYZθ direction.

[0126] The aerosol supply unit is connected to the gas supply unit by piping. The aerosol supply unit supplies an aerosol, which is a mixture of raw material particles and gas, to the nozzle via the piping. The apparatus further includes a powder supply unit for supplying raw material particles. The powder supply unit may be located within the aerosol supply unit or separately from the aerosol supply unit. In addition, the apparatus may include an aerosol forming unit that mixes raw material particles and gas separately from the aerosol supply unit. By controlling the supply amount from the aerosol supply unit so that the amount of particles ejected from the nozzle is constant, a homogeneous structure can be obtained.

[0127] The gas supply unit supplies nitrogen gas, helium gas, argon gas, air, etc. When the supplied gas is air, it is preferable to use compressed air with low levels of impurities such as moisture and oil, or to further provide an air treatment unit to remove impurities from the air.

[0128] Next, an example of the operation of the apparatus used in the aerosol deposition method will be described. With the substrate 10 placed on a stage inside the chamber, the pressure inside the chamber is reduced to below atmospheric pressure, specifically to several hundred Pa, by an exhaust unit such as a vacuum pump. On the other hand, the internal pressure of the aerosol supply unit is set higher than the internal pressure of the chamber. The internal pressure of the aerosol supply unit is, for example, several hundred to tens of thousands of Pa. The powder supply unit may be set to atmospheric pressure. The differential pressure between the chamber and the aerosol supply unit is used to accelerate the fine particles in the aerosol so that the ejection velocity of the raw material particles from the nozzle is in the subsonic to supersonic range (50 to 500 m / s). The ejection velocity is controlled by the flow velocity of the gas supplied from the gas supply unit, the type of gas, the shape of the nozzle, the length and inner diameter of the piping, and the exhaust volume of the exhaust unit. For example, a supersonic nozzle such as a Laval nozzle can be used as the nozzle. The fine particles in the aerosol ejected at high speed from the nozzle collide with the substrate 10, are crushed or deformed, and deposited on the substrate 10 as a structure (ceramic layer 20). By changing the relative position between the substrate 10 and the nozzle, a composite structure (semiconductor manufacturing equipment component 120) is formed on the substrate 10, which has a structure (ceramic layer 20) having a predetermined area.

[0129] Furthermore, a crushing section may be provided to break up the aggregation of fine particles before they are ejected from the nozzle. Any method can be selected for the crushing method in the crushing section. Examples of known methods include mechanical crushing such as vibration and impact, electrostatic discharge, plasma irradiation, and classification.

[0130] (Second Embodiment) Figures 5(a) and 5(b) are cross-sectional views illustrating some of the components for semiconductor manufacturing equipment according to the second embodiment.

[0131] The semiconductor manufacturing equipment component 120d shown in Figure 5(a) can be described in the same way as the semiconductor manufacturing equipment component 120. However, the arithmetic mean height Sa of the surface of the first part 21 does not have to be smaller than the arithmetic mean height Sa of the surface of the second part 22, and may be the same as that of the semiconductor manufacturing equipment component 120. Also, the arithmetic mean height Sa of the third hole 13c does not have to be larger than the arithmetic mean height Sa of the surfaces of the first part 21 and the second part 22, and may be the same as that of the semiconductor manufacturing equipment component 120.

[0132] As shown in Figure 5(a), the semiconductor manufacturing equipment component 120d has a composite structure 30. A composite structure is defined as a structure comprising a base material and a structure (e.g., a layer or film) provided on the surface of the base material. The composite structure 30 includes a base material 10 and a ceramic layer 20. In this example, the composite structure 30 is a laminate of the base material 10 and the ceramic layer 20. In this embodiment, the base material 10 and the ceramic layer 20 may each have a laminated structure containing multiple layers.

[0133] As shown in Figure 5(a), the composite structure 30 has a first main surface 311 and a second main surface 312 opposite to the first main surface 311. For example, the first main surface 311 is the surface 21s of the first portion of the ceramic layer 20, and the second main surface 312 is the second surface 12 of the base material 10. The composite structure 30 is also provided with at least one through hole 313. The through hole 313 extends in the Z direction and penetrates the base material 10 and the ceramic layer 20. For example, one through hole 313 is provided in the center of the composite structure 30. However, the through hole 313 does not have to be in the center of the composite structure 30, and there may be multiple through holes.

[0134] The through-hole 313 is, for example, circular when viewed along the Z direction. The through-hole 313 (the inner circumferential surface 313s of the through-hole) has a first hole region 313a, a second hole region 313b, and a third hole region 313c. The first hole region 313a, the second hole region 313b, and the third hole region 313c are each exposed and provided to be in contact with the plasma. The inner circumferential surface 313s is the inner circumferential surface of the composite structure 30 that defines the through-hole 313. The inner circumferential surface 313s faces inward from the through-hole 313 and intersects with the XY plane.

[0135] The first hole region 313a is located near the first main surface 311 on the inner circumferential surface 313s and is adjacent to the first main surface 311. The first hole region 313a is continuous with the first main surface 311. The first hole region 313a is located between the first main surface 311 and the second main surface 312 in the Z direction. The first hole region 313a is an inclined surface that is not parallel to the first main surface 311 but intersects with the first main surface 311 and the Z direction. The first hole region 313a may be a surface extending parallel to the Z direction. In a cross-section parallel to the Z direction, the first hole region 313a may be straight or curved. When viewed along the Z direction (i.e., projected onto the XY plane), the first hole region 313a is, for example, an annular shape surrounded by the first main surface 311.

[0136] The second hole region 313b is located in the Z direction between the first hole region 313a and the second main surface 312. In other words, the position of the second hole region 313b in the Z direction is between the position of the first hole region 313a in the Z direction and the position of the second main surface 312 in the Z direction. For example, the second hole region 313b is located in the vicinity of the second main surface 312 on the inner circumferential surface 313s and is adjacent to the second main surface 312. The second hole region 313b may be continuous with the second main surface 312. The second hole region 313b extends in the Z direction and is, for example, parallel to the Z direction. The second hole region 313b is, for example, a vertical surface substantially perpendicular to the second main surface 312. When viewed along the Z direction, the second hole region 313b is, for example, an annular shape located inside the first hole region 313a.

[0137] The third hole region 313c is located in the Z direction between the first hole region 313a and the second hole region 313b. In other words, the position of the third hole region 313c in the Z direction is between the position of the first hole region 313a in the Z direction and the position of the second hole region 313b in the Z direction. The third hole region 313c is a region of the inner circumferential surface 313s that is continuous with the first hole region 313a. The third hole region 313c is an inclined surface that is not parallel to the first surface 11 but intersects with the first surface 11 and the Z direction. The third hole region 313c may be a surface that extends in the Z direction. In a cross section parallel to the Z direction, the third hole region 313c may be straight or curved. When viewed along the Z direction, the third hole region 313c is, for example, an annular shape surrounded by and in contact with the first hole region 313a, with the second hole region 313b located inside the third hole region 313c. The third hole region 313c and the second hole region 313b may be continuous.

[0138] In the example shown in Figure 5(a), the first hole region 313a of the through hole 313 is the surface 22s of the second portion 22 of the ceramic layer 20, the second hole region 313b is the second hole portion 13b of the hole 13 in the base material 10, and the third hole region 313c is the third hole portion 13c of the hole 13 in the base material 10. A portion of the through hole 313 of the composite structure 30 is at least a portion of the hole 13 in the base material 10. Specifically, a portion of the through hole 313 is defined by the second hole portion 13b and the third hole portion 13c, which define a portion of the hole 13 in the base material 10.

[0139] The hardness of the third pore region 313c is higher than that of the first pore region 313a. For example, the third pore region 313c is less resistant to wear than the first pore region 313a. In the example shown in Figure 5(a), the hardness of the third pore portion 13c of the substrate 10 is higher than that of the surface 22s of the ceramic layer 20. For example, the hardness of the material of the substrate 10 is higher than that of the material of the ceramic layer 20. This makes it possible to make the hardness of the third pore region 313c higher than that of the first pore region 313a. Specifically, the materials of the first portion 21 and the second portion 22 of the ceramic layer 20 can be at least one of rare earth element oxides, rare earth element fluorides, and rare earth element acid fluorides. The rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. Furthermore, at least one of aluminum oxide (Al2O3), zirconium oxide (ZrO2), and aluminum nitride (AlN) can be used as the material for the substrate 10.

[0140] The third hole region 313c is located further inside the through hole 313 than the first hole region 313a. For example, when handling semiconductor manufacturing equipment components, if a jig such as a positioning pin is inserted into the through hole 313, the possibility of the third hole region 313c physically contacting the jig is higher than the possibility of the first hole region 313a physically contacting the jig. Also, for example, when maintaining semiconductor manufacturing equipment components, if the first hole region 313a and the third hole region 313c come into contact with a cleaning pad, if angle θβ is smaller than angle θα, the third hole region 313c may be more prone to wear than the first hole region 313a. For example, if angle θβ is smaller than angle θα, the area near the corner of the boundary between the third hole region 313c and the second hole region 313b is more prone to force concentration and wear than the area near the corner of the boundary between the first hole region 313a and the first main surface 311.

[0141] In contrast, in this embodiment, the relatively high hardness of the third porous region 313c makes it possible to suppress damage to the third porous region 313c caused by physical contact during maintenance or handling of semiconductor manufacturing equipment components. This suppresses the generation of particles.

[0142] The semiconductor manufacturing equipment component 120e shown in Figure 5(b) differs from the semiconductor manufacturing equipment component 120d in that the ceramic layer 20 has a third portion 23. In the semiconductor manufacturing equipment component 120e, the third pore region 313c is the surface 23s of the third portion 23. Otherwise, the same explanation as for the semiconductor manufacturing equipment component 120d can be applied to the semiconductor manufacturing equipment component 120e.

[0143] The third portion 23 of the ceramic layer 20 is provided on the third hole 13c and is in contact with the third hole 13c. The third portion 23 is provided continuously from the second portion 22. The surface 23s of the third portion 23 is in direct contact with the plasma. That is, the surface 23s is the surface opposite to the surface of the third portion 23 that is in contact with the third hole 13c, and is provided to be exposed inside the chamber 110. In this example, the first hole 13a and the third hole 13c are covered by the ceramic layer 20 and do not come into direct contact with the plasma. This makes it possible to suppress the generation of particles from the first hole 13a and the third hole 13c of the pore 13 of the substrate. On the other hand, as in the example of Figure 5(a), if the ceramic layer 20 is not provided on the third hole 13c, it is possible to suppress the formation of a ceramic layer 20 with inferior properties on the third hole 13c, and the generation of particles from the ceramic layer 20 can be further suppressed.

[0144] In the example shown in Figure 5(b), the first hole region 313a of the through-hole 313 is the surface 22s of the second portion 22 of the ceramic layer 20, the second hole region 313b is the second hole portion 13b of the hole 13 in the base material 10, and the third hole region 313c is the surface 23s of the third portion 23 of the ceramic layer 20. In this example as well, a portion of the through-hole 313 of the composite structure 30 is at least a portion of the hole 13 in the base material 10. Specifically, a portion of the through-hole 313 is defined by the second hole portion 13b which defines a portion of the hole 13 in the base material 10.

[0145] In the semiconductor manufacturing equipment component 120e, the hardness of the third pore region 313c is higher than that of the first pore region 313a. That is, the hardness of the surface 23s of the third portion 23 of the ceramic layer 20 is higher than that of the surface 22s of the second portion 22 of the ceramic layer 20. This makes it possible to suppress damage to the third pore region 313c caused by physical contact during maintenance or handling of the semiconductor manufacturing equipment component. This makes it possible to suppress the generation of particles.

[0146] For example, the material of the third part 23 differs from the material of the second part 22, and the hardness of the material of the third part 23 is higher than that of the material of the second part 22. This makes it possible to make the hardness of the third pore region 313c higher than that of the first pore region 313a. For example, the material of the third part 23 can be at least one of rare earth element oxides, rare earth element fluorides, and rare earth element oxyfluorides. The rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. By making the composition of the third part 23 different from the composition of the second part 22, the hardness of the third part 23 and the hardness of the second part 22 can be made different.

[0147] By using masking tape or the like, the film that will become the second portion 22 and the film that will become the third portion 23 can be formed in desired areas. For example, with a mask placed over the first hole 13a or the second portion 22, the film that will become the third portion 23 can be formed on the third hole 13c. Alternatively, with a mask placed over the third hole 13c or the third portion 23, the film that will become the second portion 22 can be formed on the first hole 13a. This allows for the formation of separate films on the first hole 13a and the third hole 13c, and the materials of the third portion 23 and the second portion 22 to be different. This allows for the hardness of the third portion 23 and the hardness of the second portion 22 to be different. Alternatively, separate films can be formed on the first hole 13a and the third hole 13c by removing a portion of the film after deposition by polishing or the like, without using masking tape.

[0148] For example, the density of the third portion 23 is higher than that of the second portion 22. This makes it possible to make the hardness of the third pore region 313c higher than that of the first pore region 313a. For example, the second portion 22 and the third portion 23 can be formed by first depositing a single film that will become the second portion 22 and the third portion 23, and then applying a surface modification treatment to a part of that film. An example of a surface modification treatment is a method in which energy is applied to a range of a predetermined depth from the surface of the film to melt it, and then that range is cooled to form a molten solidified film. The molten solidified film formed by the surface modification treatment has fewer voids and a denser film with a flatter surface compared to the area that has not been surface modified. A method that can selectively thermally melt the surface may be used for the surface modification treatment. Specifically, the surface modification treatment can be laser annealing or plasma jet treatment. For example, the area that has been surface modified becomes the third portion 23, and the area that has not been surface modified becomes the second portion 22.

[0149] The film deposition conditions for the third part 23 and the second part 22 may be made different. This makes it possible to make the density of the third part 23 and the density of the second part 22 different, or the hardness of the third part 23 and the hardness of the second part 22 different. When using the aerosol deposition method, these film deposition conditions include the flow rate, flow velocity, or type of gas supplied from the gas supply unit. The film deposition conditions may also be the angle at which the aerosol ejected from the nozzle collides with the substrate.

[0150] In this embodiment, the ceramic layer 20 does not necessarily have to be provided on the first hole 13a and the third hole 13c. The first hole region 313a may also be the surface of the substrate 10. The hardness of a part of the substrate surface may be adjusted as appropriate by surface treatment (e.g., coating or modification treatment).

[0151] Figures 6(a) and 6(b) are cross-sectional views illustrating some components for semiconductor manufacturing equipment. Figures 6(a) and 6(b) represent a substrate 10 for semiconductor manufacturing equipment, respectively. The configuration of the substrate 10 shown in Figure 6(a) is the same as that of the substrate 10 described in Figure 2. In the substrate 10 of Figure 6(a), the angle θα is 150°.

[0152] In the substrate 10 shown in Figure 6(b), the angle θα is 120°. The substrate 10 in Figure 6(b) differs from the substrate 10 in Figure 6(a) in the shape (length and angle) of the inclined surface 13ac and the length of the second hole 13b. Otherwise, the configuration of the substrate 10 in Figure 6(b) is the same as that of the substrate 10 in Figure 6(a).

[0153] In the substrate 10 shown in Figure 6(a), angle θα is greater than angle θβ. In the substrate 10 shown in Figure 6(b), angle θα is smaller than angle θβ. The length Ln in the Z direction of the second hole 13b of the substrate 10 in Figure 6(a) is longer than the length Ln in the Z direction of the second hole 13b of the substrate 10 in Figure 6(b). Thus, assuming a constant thickness of the substrate 10, when angle θα is greater than angle θβ, it is easier to increase the length of the second hole 13b in the Z direction.

[0154] Figures 6(a) and 6(b) show the nearest circle PC. The nearest circle PC is close to the edge (boundary 14) formed by the first surface 11 and the inclined surface 13ac. The nearest circle PC is a circle tangent to the first surface 11 and the inclined surface 13ac in a cross section parallel to the Z direction, as shown in Figures 6(a) and 6(b). The distance (distance t2) between the position of the center p of the nearest circle PC in the X direction and the position of the boundary 14 in the X direction in Figure 6(a) is the same as the distance (distance t2) between the position of the center p of the nearest circle PC in the X direction and the position of the boundary 14 in the X direction in Figure 6(b). In other words, if the positions of the boundaries 14 in the X direction are aligned in Figures 6(a) and 6(b), the positions of the centers p in the X direction are aligned. At this time, the width t of the inclination shown in Figures 6(a) and 6(b) is assumed to be constant. In other words, the width t in Figure 6(a) and the width t in Figure 6(b) are equal. If the radius R of the nearest circle PC shown in Figure 6(a) is r, then the radius R of the nearest circle PC shown in Figure 6(b) is 0.47r.

[0155] Here, the width t of the incline is the sum of a predetermined distance t1 and a predetermined distance t2. In Figure 6(a), the predetermined distance t1 is the distance in the X direction from the boundary 14 to the second hole 13b. The predetermined distance t1 is constant. That is, the predetermined distance t1 in Figure 6(a) and the predetermined distance t1 in Figure 6(b) are equal to each other. The width t of the incline is the distance along the X direction between the center p of the adjacent circle PC and the second hole 13b in Figure 6(a).

[0156] Figure 7 is a graph illustrating the stress levels of components used in semiconductor manufacturing equipment. Figure 7 illustrates the calculation results of the relationship between the radius R of the nearest circle PC and the stress S generated in the semiconductor manufacturing equipment component. Specifically, Figure 7 shows the change in stress S when the radius R of the nearest circle PC of the substrate 10 is changed, similar to Figures 6(a) and 6(b), in a semiconductor manufacturing equipment component similar to that in Figure 2. More specifically, in the substrate 10, the distance t2 (the position of the center p of the nearest circle PC in the X direction, and the position of the boundary 14 in the X direction) and the thickness of the substrate 10 are kept constant, and the angle θα is changed. This allows us to calculate the stress S generated in the ceramic layer 20 formed on the boundary 14 when the radius R, the length of the second hole 13b in the Z direction, and the shape (length and angle) of the inclined surface 13ac are changed. Note that the angle θα is assumed to be greater than 90°, in which case the radius R > 0.27r.

[0157] The stress S is the calculated result of the stress (e.g., residual stress) occurring at the connection between the first part 21 and the second part 22 (i.e., the ceramic layer 20 formed on the boundary 14). For example, the magnitude of the stress S corresponds to the electric field strength on the surface of the ceramic layer 20 on the boundary 14.

[0158] As the angle θα increases, the radius R of the nearby circle PC increases. As shown in Figure 7, as the radius R increases, the stress S decreases. For example, as shown in Figure 6(a), when the angle θα is 150°, let the radius R be r and the stress S be approximately s. As shown in Figure 6(b), when the angle θα is 120°, the radius R is 0.47r, and the stress S is calculated to be approximately 1.7s. In other words, in the example in Figure 6(a), stress concentration can be suppressed compared to the example in Figure 6(b), and the stress is reduced by about 1.7 times. That is, stress concentration can be mitigated by increasing the angle θα. The angle θα is, for example, 150° or more, more preferably 160° or more.

[0159] For example, the inclined surface 13ac is straight in a cross-section parallel to the Z direction. If the inclined surface 13ac is curved in a cross-section parallel to the Z direction, the electric field may concentrate on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac, potentially generating particles. In contrast, if the inclined surface 13ac is straight in a cross-section parallel to the Z direction, the electric field concentration on the inclined surface 13ac or the ceramic layer 20 on the inclined surface 13ac can be further mitigated.

[0160] For example, when the radius R is 0.3r, the stress S is approximately 2.5s, and when the radius R is 0.7r, the stress S is approximately 1.2s.

[0161] Figure 8 is a table illustrating the evaluation of particle resistance in semiconductor manufacturing equipment components. Samples 1 to 5 are the same as the semiconductor manufacturing equipment component 120 described in relation to Figure 2. As shown in Figure 8, in samples 1 to 5, at least one of the arithmetic mean height Sa of the first part 21, the arithmetic mean height Sa of the second part 22, and the arithmetic mean height Sa of the third hole 13c is varied. In samples 1 to 5, everything except the arithmetic mean height Sa (e.g., angle θα, angle θβ, thickness of the substrate 10, etc.) is constant.

[0162] In Sample 1, the arithmetic mean height Sa of the first part 21 is 0.03 μm, the arithmetic mean height Sa of the second part 22 is 0.06 μm, and the arithmetic mean height Sa of the third hole 13c is 0.2 μm. In Sample 2, the arithmetic mean height Sa of the first part 21 is 0.03 μm, the arithmetic mean height Sa of the second part 22 is 0.12 μm, and the arithmetic mean height Sa of the third hole 13c is 0.5 μm. In Sample 3, the arithmetic mean height Sa of the first part 21 is 0.06 μm, the arithmetic mean height Sa of the second part 22 is 0.35 μm, and the arithmetic mean height Sa of the third hole 13c is 0.3 μm. In Sample 4, the arithmetic mean height Sa of the first part 21 is 0.08 μm, the arithmetic mean height Sa of the second part 22 is 0.81 μm, and the arithmetic mean height Sa of the third hole 13c is 0.85 μm. In Sample 5, the arithmetic mean height Sa of the first part 21 is 0.15 μm, the arithmetic mean height Sa of the second part 22 is 0.41 μm, and the arithmetic mean height Sa of the third hole 13c is 0.2 μm.

[0163] Figure 8 shows the ratios R21 and R31 for each sample. Ratio R21 is the ratio of the arithmetic mean height Sa of the second part 22 to the arithmetic mean height Sa of the first part 21. Ratio R31 is the ratio of the arithmetic mean height Sa of the third hole 13c to the arithmetic mean height Sa of the first part 21.

[0164] Figure 8 shows the particle resistance of each sample, indicated by "◎", "○", or "×". In evaluating particle resistance, the sample is irradiated with plasma, and the difference between the arithmetic mean height Sa before plasma irradiation and the short mean height Sa after plasma irradiation is evaluated. The plasma irradiation conditions are as follows: An inductively coupled plasma reactive ion etching system (Muc-21 Rv-Aps-Se / Sumitomo Precision Products) is used as the plasma etching apparatus. The plasma etching conditions are as follows: the power output of the ICP (Inductively Coupled Plasma) is 1500W, the bias output is 750W, a mixed gas of 100ccm of CHF3 gas and 10ccm of O2 gas is used as the process gas, the pressure is 0.5Pa, and the plasma etching time is 1 hour.

[0165] "◎" indicates that the change in arithmetic mean height Sa due to plasma irradiation is small in all of the first part 21, the second part 22, and the third hole 13c. "○" indicates that the change in arithmetic mean height Sa due to plasma irradiation is small in two or more of the first part 21, the second part 22, and the third hole 13c. "×" indicates particle resistance other than "◎" and "○".

[0166] As already mentioned, for example, the arithmetic mean height Sa of the surface 22s of the second part 22 is between 2 and 10 times, more preferably 5 times, the arithmetic mean height Sa of the surface 21s of the first part 21. In other words, the ratio R21 is between 2.0 and 10, more preferably 5.0. As shown in Figure 8, the particle resistance of sample 3, which has a ratio R21 of 5.8, is higher than that of sample 4, which has a ratio R21 of 10.1. The particle resistance of sample 1, which has a ratio R21 of 2.0, and sample 2, which has a ratio R21 of 4.0, is higher than that of sample 3.

[0167] Furthermore, as already mentioned, for example, the arithmetic mean height Sa of the third hole 13c is greater than twice the arithmetic mean height Sa of the surface 21s of the first portion 21. In other words, the ratio R31 is greater than 2.0. As shown in Figure 8, the particle resistance of sample 1 with a ratio R31 of 6.7, sample 2 with a ratio R31 of 16.7, and sample 3 with a ratio R31 of 5.0 is higher than that of sample 5 with a ratio R31 of 1.3.

[0168] Furthermore, the cross-sections of the semiconductor manufacturing equipment components described in Figures 2 to 6(b) may be cross-sections passing through the center of the hole 13 in the XY plane.

[0169] In this specification, "perpendicular" and "parallel" do not mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and it is sufficient if they are substantially perpendicular and substantially parallel.

[0170] Embodiments of the present invention have been described above. However, the present invention is not limited to these descriptions. Modifications made by those skilled in the art to the above-described embodiments are also included within the scope of the present invention, as long as they retain the features of the present invention. For example, the shape, dimensions, material, arrangement, and installation configuration of each element of semiconductor manufacturing equipment components, semiconductor manufacturing equipment, etc., are not limited to those exemplified and can be modified as appropriate. Furthermore, the elements of each of the embodiments described above can be combined to the extent technically possible, and these combinations are also included within the scope of the present invention insofar as they include the features of the present invention. [Explanation of symbols]

[0171] 10, 10a~10c base material, 11 first surface, 12 second surface, 13 hole, 13a first hole, 13ac slope, 13b second hole, 13c third hole, 13s inner peripheral surface, 14, 15 boundary, 16a first region, 16b second region, 16c boundary, 17 boundary, 20 ceramic layer, 21 first part, 21s surface, 22 second part, 22s surface, 23 third part, 23s surface, 30 composite structure, θα, θβ, θ1~θ4 angle, 100 semiconductor manufacturing equipment, 110 chamber, 111 inner wall, 111b lower inner wall, 111u upper inner wall, 120, 120a~120e Semiconductor manufacturing equipment components, 160 Electrostatic chuck, 191 Region, 210 Wafer, 221 Particle, 311 First main surface, 312 Second main surface, 313 Through hole, 313a First hole region, 313b Second hole region, 313c Third hole region, 313s Inner circumferential surface, L1~L3 Line segment, T21, T22 Thickness, e1~e4 Edge, P1~P3 Part

Claims

1. A component for semiconductor manufacturing equipment used in the chamber of semiconductor manufacturing equipment, A ceramic substrate comprising a first surface, a second surface opposite to the first surface, and at least one hole penetrating the first surface and the second surface, A ceramic layer provided on the aforementioned ceramic substrate, Equipped with, The aforementioned hole is A first hole is continuous with the first surface and inclined with respect to a first direction from the first surface toward the second surface, A second hole is located between the second surface and the first hole in the first direction and extends along the first direction, A third hole is located between the first hole and the second hole in the first direction and is inclined with respect to the first direction, It has a configuration that allows the plasma source gas to be supplied to the chamber from and / or through the hole, The plasma corrosion resistance of the ceramic layer is higher than that of the ceramic substrate. The ceramic layer includes a first portion provided so as to be exposed on the first surface and a second portion provided on the first hole, The third hole is provided to be exposed, and is a component for semiconductor manufacturing equipment.

2. The first hole has a first end located at one end in the first direction and a second end located at the other end. The second hole has a first end located at one end in the first direction and a second end located at the other end. The third hole has a first end located at one end in the first direction and a second end located at the other end. The first end of the first hole is continuous with the first surface. The second end of the second hole is continuous with the second surface. The first end of the third hole is continuous with the second end of the first hole. The semiconductor manufacturing apparatus member according to claim 1, wherein the second end of the third hole is continuous with the first end of the second hole.

3. The semiconductor manufacturing apparatus component according to claim 2, wherein the ceramic layer is not provided in either the second hole or the third hole.

4. The hole has an inclined surface including the first hole portion and the third hole portion, The semiconductor manufacturing apparatus member according to any one of claims 1 to 3, wherein the inclined surface is linear in a cross-section parallel to the first direction.

5. The hole has an inclined surface including the first hole portion and the third hole portion, The semiconductor manufacturing apparatus component according to any one of claims 1 to 3, wherein the angle between the first surface and the inclined surface is greater than the angle between the second hole and the inclined surface.

6. The semiconductor manufacturing apparatus component according to any one of claims 1 to 5, wherein the thickness of the second portion is thinner than that of the first portion.

7. The semiconductor manufacturing apparatus component according to any one of claims 1 to 6, wherein the density of the second portion is higher than the density of the first portion.

8. The semiconductor manufacturing apparatus component according to any one of claims 1 to 7, wherein the hardness of the second portion is higher than the hardness of the first portion.

9. The ceramic layer comprises polycrystalline ceramics, as described in any one of claims 1 to 8, for semiconductor manufacturing apparatus components.

10. The semiconductor manufacturing apparatus component according to claim 9, wherein the average crystallite size of the polycrystalline ceramic, calculated from TEM images at a magnification of 400,000x to 2,000,000x, is 3 nanometers or more and 50 nanometers or less.

11. The semiconductor manufacturing apparatus component according to any one of claims 1 to 10, wherein the ceramic layer comprises at least one selected from the group consisting of oxides of rare earth elements, fluorides of rare earth elements, and oxyfluorides of rare earth elements.

12. The semiconductor manufacturing apparatus component according to claim 11, wherein the rare earth element is at least one selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

13. The ceramic substrate comprises alumina, as described in any one of claims 1 to 12, for semiconductor manufacturing apparatus.

14. The semiconductor manufacturing apparatus component according to claim 1, wherein an injector for spraying plasma raw material gas is arranged in the hole.

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