Device incorporating an IR signal transmission region

Abstract

To provide a device incorporating an IR signal transmissive region.SOLUTION: A semiconductor device has a plurality of layers deposited on a substrate and extending in at least one lateral face defined by a lateral axis of the semiconductor device, and comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation in the semiconductor device in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation in the semiconductor device in at least a part of at least one of an IR and an NIR spectrum.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] (Related applications) This application is U.S. Patent Provisional Application No. 63 / 081,707 (September 22, 2020) application ), No. 63 / 107,393 (filed on October 29, 2020) 、 No. 63 / 153,834 (filed on February 25, 2021) 、 No. 63 / 163,453 (filed on March 19, 2021), No. 63 / 181,100 (filed on April 28, 2021) , and the same No. 63 / 122,421 (filed December 7, 2020), No. 63 / 141,857 (filed January 26, 2021), and No. 63 / 158,185 (filed March 8, 2021) Claiming priority rights to the above, the contents of each of these provisional applications are incorporated herein by reference in their entirety.

[0002] (Field of invention) This disclosure relates to a multilayer semiconductor device, and more particularly to an optoelectronic device having first and second electrodes separated by semiconductor layers, and having a conductive deposited material deposited thereon, and being patterned using a nucleation-inhibiting coating (NIC) and / or a patterned coating that can act as such a NIC and / or may be such a NIC. [Background technology]

[0003] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductor layer is placed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that move toward each other through at least one semiconductor layer. When a pair of holes and electrons combine, a photon can be emitted.

[0004] An OLED display panel can contain multiple (sub)pixels, each of which has a corresponding pair of electrodes. The various layers and coatings of such a panel are typically formed by a vacuum-based deposition process.

[0005] In some applications, the aim may be to provide a conductive and / or electrode coating in a pattern over either or both of the sides and cross-sections of each (sub)pixel of a panel by selectively depositing at least one thin film of a conductive coating during the OLED manufacturing process to form device features such as, but not limited to, electrically coupled electrodes and / or conductive elements.

[0006] In some applications, the goal may be to make the device virtually transparent while still allowing it to emit light. In some applications, the device may have multiple light-emitting regions or multiple light-emitting regions arranged between subpixels. signal It comprises a light-emitting region. The light-emitting region generally includes layers, coatings, and / or components that attenuate or suppress the transmission of external light through such a region. signal The transparent region is generally provided in the non-emitting region of the display panel, and the presence of such layers, coatings, and / or components that attenuate or suppress the transmission of external light can be omitted therefrom.

[0007] One way to do this, in some non-limiting applications, involves interposing a fine metal mask (FMM) during the deposition of a depositional material containing electrodes and / or electrically coupled conductive elements, and / or an EM radiation absorption layer. However, such depositional materials typically have relatively high evaporation temperatures, which affects the ability to reuse the FMM and / or the accuracy of the patterns that can be achieved, and consequently increases cost, labor, and complexity.

[0008] One way to do this, in some non-limiting examples, involves depositing the electrode material and then removing unwanted areas of the electrode material, including by a laser drilling process, to form a pattern. However, the removal process often involves the creation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may not be suitable for use in some applications and / or in conjunction with certain devices that include specific topographic features.

[0010] In some non-limiting applications, the objective may be to increase photon transmission and / or reduce photon absorption, thereby providing an improved mechanism along the optical path through at least a portion of the device in at least a wavelength subrange of the electromagnetic (EM) spectrum, including but not limited to providing selective deposition of the deposited material.

[0011] In some non-limiting applications, the aim may be to provide a mechanism for depositing thin dispersed layers of metallic NPs within optoelectronic devices, which may affect the device's performance in terms of optical properties, performance, stability, reliability, and / or lifetime. The present invention provides, for example, the following: (Item 1) A semiconductor device having a plurality of layers deposited on a substrate and extending to at least one side defined by the transverse axis of the semiconductor device, A first layer surface is deposited and comprises at least one electromagnetic (EM) radiation absorbing layer including at least one discontinuous layer of particulate structure containing the deposited material, A semiconductor device in which the at least one particle structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible spectrum and the ultraviolet (UV) spectrum, while substantially allowing the transmission of EM radiation in the semiconductor device in at least a portion of at least one of the infrared (IR) spectrum and the near-infrared (NIR) spectrum. (Item 2) The device according to item 1, wherein the deposited material is a metal. (Item 3) The device according to item 2, wherein the deposited material comprises at least one of magnesium, silver, and ytterbium. (Item 4) The device according to any one of items 1 to 3, wherein the deposited material is co-deposited with a co-deposited dielectric material. (Item 5) The device according to any one of items 1 to 4, wherein the at least one particle structure has a unique feature selected from at least one of size, size distribution, shape, surface coverage, composition, deposition density, and composition. (Item 6) The device according to item 5, wherein the at least one particle structure has a coverage of at least one of the following: about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, and 20-30%. (Item 7) The device according to item 5 or 6, wherein the majority of the at least one particle structure has a maximum feature size of at least one or less of approximately 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. (Item 8) The device according to any one of items 5 to 7, wherein the at least one particle structure has a characteristic size that is at least one of the mean and median values ​​of at least one of the following: about 5 to 40 nm, 5 to 30 nm, 8 to 30 nm, 10 to 30 nm, 8 to 25 nm, 10 to 25 nm, 8 to 20 nm, 10 to 20 nm, 10 to 15 nm. (Item 9) The device according to any one of items 1 to 8, wherein the at least one particle structure includes a seed, and the deposited material tends to coalesce around the seed. (Item 10) The second layer further includes a patterned coating placed on the surface of the second layer, The first layer surface is the exposed layer surface of the patterned coating, The device according to any one of items 1 to 9, wherein the initial adhesion probability of the deposited material to the surface of the patterned coating is substantially smaller than 0.3 and at least one of the initial adhesion probabilities of the deposited material to the surface of the second layer, so that the patterned coating substantially lacks a closed coating of the deposited material. (Item 11) The device according to item 10, wherein the patterned coating comprises at least one patterned material. (Item 12) The device according to item 10 or 11, wherein the patterned coating comprises a first patterned material having a first initial adhesion probability to the deposition of the deposited material and a second patterned material having a second initial adhesion probability to the deposition of the deposited material, wherein the first initial adhesion probability is substantially smaller than the second initial adhesion probability. (Item 13) The device according to item 12, wherein the first patterning material is a nucleation-inhibiting coating (NIC) material, and the second patterning material is selected from at least one of electron transport layer (ETL) material, Liq, and lithium fluoride (LiF). (Item 14) The device according to any one of items 1 to 13, wherein the layer extends into a first portion and a second portion of the at least one side, the at least one EM radiation absorbing layer extends across the first portion, and the device is adapted to allow at least one EM signal to pass through the first portion at an angle to the layer. (Item 15) The device according to item 14, wherein the at least one EM signal has a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum. (Item 16) The device according to item 14 or 15, wherein the first portion substantially lacks a closed coating of the deposited material. (Item 17) The device according to any one of items 14 to 16, wherein the first portion corresponds to at least a portion of the signal-transmitting region. (Item 18) The device according to any one of items 14 to 17, wherein the device is adapted to receive the at least one EM signal through the device for replacement with at least one under-display component. (Item 19) The at least one under-display component is A receiver adapted to receive the at least one EM signal passing through the device, and The device according to item 18, comprising at least one transmitter adapted to emit the at least one EM signal passing through the device. (Item 20) The device according to item 19, wherein the receiver is an IR detector and the transmitter is an IR emitter. (Item 21) The device according to item 19 or 20, wherein the transmitter emits a first EM signal and the receiver detects a second EM signal which is a reflection of the first EM signal. (Item 22) The device according to item 21, wherein the exchange of the first and second EM signals provides biometric authentication of the user. (Item 23) The device according to any one of items 18 to 22, wherein the device together with the device forms a display panel of a user device surrounding the under-display component. (Item 24) The device according to any one of items 14 to 23, wherein the second portion comprises at least one emission region for emitting the at least one EM signal at an angle to the layer. (Item 25) The device further comprises at least one semiconductor layer disposed on the layer of the device, Each emission region is equipped with a first electrode and a second electrode, The first electrode is disposed between the substrate and the at least one semiconductor layer. The device according to item 24, wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode. (Item 26) The device according to item 25, further comprising at least one closed coating of a deposited material disposed on the exposed layer surface of the device in the second portion. (Item 27) The device according to item 26, wherein the second electrode comprises the at least one closed coating of the deposited material. [Brief explanation of the drawing]

[0012] Herein, examples of the present disclosure are illustrated by reference to the following drawings, where the same reference numerals in different drawings indicate the same elements and / or similar and / or corresponding elements in some non-limiting examples. [Figure 1] This is a simplified block diagram from a cross-section of an exemplary device having multiple layers on its sides, including a discontinuous layer of particle structure on the exposed surface of a device containing an EM radiation absorption layer, as an example of the present disclosure. [Figure 2] This is a simplified block diagram showing a version of the device in Figure 1 having an additional optional layer as shown, according to an example of the present disclosure. [Figure 3A] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3B] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3C]This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3D] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3E] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3F] Figures 3A to 3E show histograms plotting the histogram distribution of particle structures based on the analysis of the microscopic images. [Figure 3G] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3H] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3I] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3J] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3K] Figures 3G to 3J show histograms plotting the histogram distribution of particle structures based on the analysis of the microscopic images. [Figure 3L] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3M] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3N] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 3O] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 4A] This is a schematic diagram showing the EM radiation absorption layer of Figure 1 adjacent to the emission region of the device in Figure 1, which is formed by the deposition of a patterned coating following the deposition of multiple seeds for forming a particle structure according to an example of the present disclosure. [Figure 4B] This is a schematic diagram showing a version of the EM radiation absorption layer in Figure 4A, formed by the deposition of a patterned coating before the deposition of multiple seeds, according to an example of the present disclosure. [Figure 5]This schematic diagram shows an exemplary cross-sectional view of an exemplary user device having a display panel with multiple layers, each having at least one opening inside, according to an example of the present disclosure. [Figure 6A] Figure 5 is a schematic diagram illustrating the use of the user device, as an example of the present disclosure, in which at least one aperture is embodied by at least one signal-transmitting region to exchange EM radiation in the IR and / or NIR spectrum for user biometric authentication. [Figure 6B] This is a plan view of a user device including a display panel, as shown in Figure 5, which is an example of the present disclosure. [Figure 6C] Figure 6B shows a cross-sectional view of the device shown along line 6C-6C. [Figure 6D] This is a plan view of a user device including a display panel, as shown in Figure 5, which is an example of the present disclosure. [Figure 6E] Figure 6D shows a cross-sectional view of the device shown along line 6E-6E. [Figure 6F] This is a plan view of a user device including a display panel, as shown in Figure 5, which is an example of the present disclosure. [Figure 6G] Figure 6F shows a cross-sectional view of the device along line 6G-6G. [Figure 6H] An enlarged plan view of a portion of the panel, as an example of this disclosure, is shown. [Figure 7A] This is a simplified block diagram from a cross-section of various examples of an exemplary user device according to an example of the present disclosure, the user device having a display panel for covering the main body and at least one under-display component housed inside for exchanging EM signals through the user device at an angle to the layer of the display panel. [Figure 7B] This is a simplified block diagram from a cross-section of various examples of an exemplary user device according to an example of the present disclosure, the user device having a display panel for covering the main body and at least one under-display component housed inside for exchanging EM signals through the user device at an angle to the layer of the display panel. [Figure 7C] This is a simplified block diagram from a cross-section of various examples of an exemplary user device according to an example of the present disclosure, the user device having a display panel for covering the main body and at least one under-display component housed inside for exchanging EM signals through the user device at an angle to the layer of the display panel. [Figure 8A] Each of these images shows multiple SEM images of an exemplary sample from an example of this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8B] Each of these images shows multiple SEM images of an exemplary sample from an example of this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8C] Each of these images shows multiple SEM images of an exemplary sample from an example of this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8D] Each of these images shows multiple SEM images of an exemplary sample from an example of this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 8E] Each of these images shows multiple SEM images of an exemplary sample from an example of this disclosure, along with plots of the distribution of several particles of various characteristic sizes within it. [Figure 9A] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 9B] This is an SEM micrograph of a sample prepared in the example of this disclosure. [Figure 9C] This chart shows the average diameter based on the analysis of the microscopic images in Figures 9A and 9B. [Figure 10] This is a simplified block diagram from a cross-section of an exemplary device having multiple layers on a side surface, formed by selective deposition of a patterned coating on a first portion of the side surface, followed by deposition of a closed coating of the deposited material on a second portion thereof, according to an example of the present disclosure. [Figure 11]This schematic diagram illustrates an exemplary process for depositing a patterned coating in a certain pattern onto the surface of an exposed layer of the underlying device in an exemplary version of the device in Figure 10, according to an example of the present disclosure. [Figure 12] Figure 10 is a schematic diagram illustrating an exemplary process for depositing a deposition material onto a second portion of the exposed layer surface, including the deposition pattern of the patterned coating, where the patterned coating is a nucleation-inhibiting coating (NIC). [Figure 13A] Figure 10 is a schematic diagram showing an exemplary version of the device in a cross-sectional view. [Figure 13B] This is a schematic diagram showing the device in Figure 13A in a complementary plan view. [Figure 13C] Figure 10 is a schematic diagram showing an exemplary version of the device in a cross-sectional view. [Figure 13D] This is a schematic diagram showing the device in Figure 13C in a complementary plan view. [Figure 13E] Figure 10 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 13F] Figure 10 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 13G] Figure 10 is a schematic diagram showing a cross-sectional view of an example of the device. [Figure 14A] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14B] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14C] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14D]This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14E] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14F] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14G] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14H] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 14I] This schematic diagram illustrates various potential behaviors of the patterned coating at the deposition interface with the deposited layer in an exemplary version of the device shown in Figure 10, using various examples in this disclosure. [Figure 15] This is a block diagram from a cross-section of an exemplary electroluminescent device according to an example of the present disclosure. [Figure 16] Figure 15 is a cross-sectional view of the device. [Figure 17] This is a schematic diagram showing an exemplary patterned electrode in plan view, suitable for use in a version of the device shown in Figure 18, according to an example of this disclosure. [Figure 18] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 17, along line 18-18. [Figure 19A] This schematic diagram shows, in plan view, several exemplary electrode patterns suitable for use in an exemplary version of the device of Figure 15, according to an example of this disclosure. [Figure 19B]This schematic diagram shows an exemplary cross-sectional view of the device in Figure 19A at an intermediate stage, along line 19B-19B. [Figure 19C] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 19A along line 19C-19C. [Figure 20] Figure 15 is a schematic diagram showing a cross-sectional view of an exemplary version of the device having an exemplary patterned auxiliary electrode according to an example of the present disclosure. [Figure 21] This is a schematic diagram showing an exemplary pattern of auxiliary electrodes covering at least one emission region and at least one non-emission region, according to an example of the present disclosure, in a plan view. [Figure 22A] This schematic diagram shows an exemplary pattern in plan view of an exemplary version of the device of Figure 15, which has multiple groups of diamond-constituting emission regions, according to an example of the present disclosure. [Figure 22B] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 22A along line 22B-22B. [Figure 22C] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 22A along line 22C-22C. [Figure 23] Figure 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device, having an additional exemplary deposition step according to an example of the present disclosure. [Figure 24] Figure 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device, having an additional exemplary deposition step according to an example of the present disclosure. [Figure 25] Figure 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device, having an additional exemplary deposition step according to an example of the present disclosure. [Figure 26] Figure 16 is a schematic diagram showing an exemplary cross-sectional view of an exemplary version of the device, having an additional exemplary deposition step according to an example of the present disclosure. [Figure 27A]This schematic diagram shows a plan view of an example of a transparent version of the device of Figure 15, which includes at least one exemplary pixel region and at least one exemplary signal-transmitting region having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 27B] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 27A along line 27B-27B. [Figure 28A] This schematic diagram shows a plan view of an example of a transparent version of the device of Figure 15, which includes at least one exemplary pixel region and at least one exemplary signal-transmitting region, according to an example of the present disclosure. [Figure 28B] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 28A, along line 28-28. [Figure 28C] This is a schematic diagram showing an exemplary cross-sectional view of the device in Figure 28A, along line 28-28. [Figure 29] This is a schematic diagram that may illustrate exemplary steps of an exemplary process for manufacturing an exemplary version of the device of Figure 16 having a subpixel region having a second electrode of different thickness, according to an example of the present disclosure. [Figure 30] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 15, in which the second electrode is coupled to an auxiliary electrode, according to an example of the present disclosure. [Figure 31] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 15, according to an example of the present disclosure, which has a partition and a shielding area such as a recess in the non-emission area of ​​the device. [Figure 32A] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 15, which has partitions and shielding areas such as openings within non-emission areas, according to various examples of the present disclosure. [Figure 32B] This schematic diagram shows an exemplary cross-sectional view of an exemplary version of the device of Figure 15, which has partitions and shielding areas such as openings within non-emission areas, according to various examples of the present disclosure. [Figure 33]33A-33C are schematic diagrams illustrating exemplary steps of an exemplary process for depositing a deposit layer in a certain pattern on the exposed layer surface of an exemplary version of the device in Figure 15 by selective deposition and subsequent removal processes, according to an example of the present disclosure. [Figure 34] This is an exemplary energy profile showing the relative energy state of adsorbed atoms absorbed onto a surface, as an example of this disclosure. [Figure 35] This is a schematic diagram illustrating the formation of a membrane nucleus according to an example of this disclosure. [Figure 36] This is a plot of photoluminescence intensity as a function of wavelength for various experimental samples.

[0013] In this disclosure, a reference number accompanied by at least one numerical value (including, but not limited to, a subscript) and / or a lowercase alphabetical character (including, but not limited to, a lowercase letter) may be understood to refer to a specific instance and / or subset thereof of the element or feature described by the reference number. Referring to a reference number without referring to the attached value and / or character may, as the context indicates, generally refer to the element or feature described by the reference number and / or the set of all instances described therein. Similarly, a reference number may have the letter "x" instead of a digit. Referring to such a reference number may, as the context indicates, generally refer to the element or feature described by the reference number in which the letter "x" is replaced with a digit and / or the set of all instances described therein.

[0014] This disclosure includes, but is not limited to, certain details, including, specific architectures, interfaces, and / or techniques, for explanatory purposes only, in order to provide a complete understanding of the disclosure. In some cases, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the disclosure with unnecessary details.

[0015] Furthermore, it will be understood that the block diagrams reproduced herein can represent conceptual diagrams of exemplary components that embody the principles of this technology.

[0016] Accordingly, the components of the systems and methods are represented, where appropriate, by conventional symbols in the drawings, showing only those specific details relevant to understanding the examples of this disclosure, so as not to obscure this disclosure with details that would be readily apparent to a person skilled in the art who has an interest in the description herein.

[0017] Any drawings provided herein may not be drawn to scale and should not be considered to limit this disclosure in any way.

[0018] Any feature or action indicated by a dashed outline may, in some cases, be considered optional. [Overview of the project]

[0019] The purpose of this disclosure is to eliminate or mitigate at least one drawback of the prior art.

[0020] The purpose of this disclosure is to eliminate or mitigate at least one drawback of the prior art.

[0021] This disclosure provides a semiconductor device having a plurality of layers deposited on a substrate and extending to at least one side defined by the transverse axis of the semiconductor device. The device comprises at least one EM radiation absorbing layer deposited on the surface of a first layer and comprising a discontinuous layer of at least one particle structure containing the deposited material. The at least one particle structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in the device in at least one portion of the visible light spectrum and the ultraviolet (UV) spectrum, while substantially allowing the transmission of EM radiation in the device in at least one portion of the IR spectrum and the NIR spectrum.

[0022] In a broader embodiment, a semiconductor device having a plurality of layers deposited on a substrate and extending to at least one side defined by the transverse axis of the semiconductor device, comprising at least one electromagnetic (EM) radiation absorbing layer deposited on the surface of a first layer and comprising a discontinuous layer of at least one particle structure containing the deposited material, wherein at least one particle structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in the semiconductor device in at least a portion of at least one of the visible light spectrum and the ultraviolet (UV) spectrum, while absorbing infrared (IR) and near infrared (NIR) spectra. A semiconductor device is disclosed that substantially allows the transmission of EM radiation in at least one portion of at least one of the vectors.

[0023] In some non-limiting examples, the deposited material may be a metal. In some non-limiting examples, the deposited material may include at least one of magnesium, silver, and ytterbium. In some non-limiting examples, the deposited material may be co-deposited with a co-deposited dielectric material.

[0024] In some non-limiting examples, at least one particle may have a distinctive feature selected from at least one of the following: size, size distribution, shape, surface coverage, composition, deposition density, and composition. In some non-limiting examples, at least one particle structure may have at least one coverage percentage from about 10–50%, 10–45%, 12–40%, 15–40%, 15–35%, 18–35%, 20–35%, and 20–30%. In some non-limiting examples, the majority of at least one particle structure may have a maximum feature size of at least one of the following: about 40 nm, 35 nm, 30 nm, 25 nm, and 20 nm. In some non-limiting examples, at least one particle structure may have a characteristic size that is at least one of the mean and median values, which are at least one of the following: approximately 5–40 nm, 5–30 nm, 8–30 nm, 10–30 nm, 8–25 nm, 10–25 nm, 8–20 nm, 10–20 nm, 10–15 nm, and 8–15 nm. In some non-limiting examples, at least one particle structure may contain a seed, around which the deposited material tends to coalesce.

[0025] In some non-limiting examples, the device may further comprise a patterned coating disposed on a second layer surface, the first layer surface being an exposed layer surface of the patterned coating, and the initial adhesion probability for deposition of the deposition material on the surface of the patterned coating is substantially smaller than at least one of 0.3 and the initial adhesion probability for deposition of the deposition material on the second layer surface, so that the patterned coating substantially lacks a closed coating of the deposition material. In some non-limiting examples, the patterned coating may comprise at least one patterned material. In some non-limiting examples, the patterned coating may comprise a first patterned material having a first initial adhesion probability for deposition of the deposition material, and a second patterned material having a second initial adhesion probability for deposition of the deposition material, the first initial adhesion probability being substantially smaller than the second initial adhesion probability. In some non-limiting examples, the first patterned material may be a nucleation inhibition coating (NIC) material, and the second patterned material may be an electron transport layer (ETL). ) at least one of the following: material, Liq, and lithium fluoride (LiF). One option is selected.

[0026] In some non-limiting examples, the layer may extend to a first and a second portion of at least one side, and at least one EM radiation absorbing layer may extend across the first portion, and the device may be adapted to allow at least one EM signal to pass through the first portion at an angle to the layer. In some non-limiting examples, the at least one EM signal may have a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum. In some non-limiting examples, the first portion may substantially lack a closed coating of the deposited material. In some non-limiting examples, the first portion may correspond to at least a portion of the signal-transmitting region.

[0027] In some non-limiting examples, a device may be adapted to receive at least one EM signal through the device for exchange with at least one under-display component. In some non-limiting examples, at least one under-display component may comprise at least one of a receiver adapted to receive at least one EM signal passing through the device, and a transmitter adapted to emit at least one EM signal passing through the device. In some non-limiting examples, the receiver may be an IR detector, and the transmitter may be an IR emitter. In some non-limiting examples, the transmitter may emit a first EM signal, and the receiver may detect a second EM signal, which is a reflection of the first EM signal. In some non-limiting examples, the exchange of the first and second EM signals may provide biometric authentication of a user.

[0028] In some non-limiting examples, the device may form a display panel for a user device that surrounds the under-display components together with the device.

[0029] In some non-limiting examples, the second part may comprise at least one emission region for emitting at least one EM signal at an angle to the layer. In some non-limiting examples, the device may further comprise at least one semiconductor layer disposed on its layer, each emission region comprising a first electrode and a second electrode, the first electrode being disposed between the substrate and at least one semiconductor layer, and the at least one semiconductor layer being disposed between the first electrode and the second electrode.

[0030] In some non-limiting examples, the device may further comprise at least one closed coating of the deposited material on the exposed layer surface in the second portion. In some non-limiting examples, the second electrode may comprise at least one closed coating of the deposited material. [Modes for carrying out the invention]

[0031] Stacked devices This disclosure generally relates to multilayer semiconductor devices, and more specifically to optoelectronic devices. Optoelectronic devices can generally encompass any device that converts electrical signals to photons and vice versa. In some non-limiting examples, a multilayer semiconductor device including an optoelectronic device may function as a surface including a display panel for a user device, but is not limited to this example.

[0032] Those skilled in the art will understand that while this disclosure covers optoelectronic devices, the principles may also be applicable to any panel having multiple layers, the multiple layers including, but not limited to, thin films, and in some non-limiting examples, at least one layer of conductive deposition material 1231 (Figure 12) that allows electromagnetic (EM) signals to pass through entirely or partially at an angle to at least one plane of the layers.

[0033] Referring here to Figure 1, a cross-sectional view of an exemplary stacked device 100 may be shown. In some non-limiting examples, Figure 15 As shown in more detail, the device 100 may comprise a plurality of layers deposited on the substrate 10, including, but not limited to, a first layer 110.

[0034] A transverse axis identified as the X-axis may be shown together with a longitudinal axis identified as the Z-axis. A second transverse axis identified as the Y-axis may be shown as substantially intersecting both the X-axis and the Z-axis. At least one of the transverse axes may define a side of the device 100. Some figures in this specification may be shown as plan views. In such plan views, a pair of transverse axes are shown, identified as the X-axis and the Y-axis, respectively, and in some examples substantially intersecting each other. At least one of these transverse axes may define a side of the device 100.

[0035] The layers of device 100 may extend along sides substantially parallel to a plane defined by the transverse axis. Those skilled in the art will understand that the substantially planar representation shown in Figure 1 may be an abstraction for illustrative purposes in some non-limiting examples. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions over the transverse range of device 100, which in some non-limiting examples include layers that are substantially absent and / or separated by non-planar transition regions (including transverse gaps and further discontinuities).

[0036] Therefore, for illustrative purposes, device 100 may be shown in cross-section as a substantially layered structure of substantially parallel planar layers, but such device may locally exhibit a variety of topographic features, each of which may substantially exhibit a layered profile described in cross-section.

[0037] EM radiation absorption Nanoparticles (NPs) are characterized primarily by their size, which is measured in nanometers. The particle structure of a material is on the nm scale and is generally understood to be about 1 to 300 nm.121 At the nm scale, the NPs of a given material may have properties (including, but not limited to, optical, chemical, physical, and / or electrical properties) that are unique to the same material in bulk form.

[0038] These properties can be utilized to improve the performance of multiple NPs when they are formed in layers of multilayer semiconductor devices, including, but not limited to, optoelectronic devices.

[0039] Current mechanisms for introducing such NP layers into devices have several drawbacks.

[0040] Firstly, typically, such NPs are formed in the close-packed layer of such devices and / or dispersed in the matrix material. As a result, the thickness of such NP layers can typically be much greater than the characteristic size of the NPs themselves. The thickness of such NP layers can impart undesirable characteristics with respect to device performance, device stability, device reliability, and / or device lifespan, which may reduce or even eliminate any recognized advantages provided by the inherent properties of the NPs.

[0041] Secondly, techniques for synthesizing NPs in such devices, and for use in such devices, may introduce large amounts of carbon (C), oxygen (O), and / or sulfur (S) through various mechanisms.

[0042] As a non-limiting example, wet chemical methods can be used to introduce NPs into a device that typically have precisely controlled characteristic size, size distribution, shape, surface coverage, composition, and / or deposition density. However, such methods typically employ organic capping groups to stabilize the NPs (e.g., the synthesis of silver (Ag) NPs capped with citrate), but such organic capping groups introduce C, O, and / or S into the synthesized NPs.

[0043] Furthermore, the NP layer deposited from the solution may typically contain C, O, and / or S due to the solvent used for deposition.

[0044] Additionally, these elements may be introduced as contaminants during wet chemical processes and / or during the deposition of NP layers.

[0045] However, once introduced, the presence of large amounts of C, O, and / or S in the NP layer of such devices can degrade the performance, stability, reliability, and / or lifespan of such devices.

[0046] Thirdly, when depositing NP layers from a solution, as the solvent used dries, the NP layer tends to have non-uniform properties across the NP layer and / or between different patterned regions of such a layer. In some non-limiting examples, the edges of a given NP layer may be considerably thicker or thinner than the interior regions of such NP layer, and this inconsistency can adversely affect device performance, stability, reliability, and / or lifetime.

[0047] Fourth, beyond wet chemical synthesis and solution deposition processes, other methods and / or processes exist for synthesizing and / or depositing NPs (including, but not limited to, vacuum-based processes (e.g., PVD)), but existing methods tend to result in insufficient control over the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of the NPs deposited thereby. As a non-limiting example, in conventional PVD processes, NPs tend to form close-packed films as their size increases. As a result, methods such as conventional PVD are generally not well-suited for forming NP layers of large, dispersed NPs with low surface coverage. Rather, the insufficient control over the characteristic size, size distribution, shape, surface coverage, composition, and / or deposition density provided by such conventional methods can result in inadequate device performance, stability, reliability, and / or lifetime.

[0048] EM radiation-absorbing coatings utilize plasmonics, a branch of nanophotonics that studies the resonant interactions between EM radiation and metals. Those skilled in the art will understand that metal nanoparticles (NPs) may exhibit LSP excitations and / or coherent oscillations of free electrons, which can be tuned by changing the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or composition of the nanostructure. Such optical responses, with respect to EM radiation-absorbing coatings, include the absorption of incident EM radiation onto them, thereby reducing their reflection.

[0049] Referring again to Figure 1, in some non-limiting examples, the EM radiation absorption (NP) layer 120 may be employed as part of the multilayer semiconductor device 100 to absorb EM radiation incident on it, or incidentally to reduce reflections from the device 100.

[0050] In some non-limiting examples, the EM radiation absorption layer 120 may be deposited on and / or covering the exposed layer surface 11, including, but not limited to, a lower layer such as the first layer 110.

[0051] In some non-limiting examples, the EM radiation absorption layer 120 may be formed by depositing a separate metal particle structure 121, which in some non-limiting examples may include NPs of a given characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or composition.

[0052] In some non-limiting examples, the particle structures 121 constituting the EM radiation absorption layer 120 may be separate metal plasmon islands or clusters, and / or may contain them.

[0053] Those skilled in the art will understand, considering the mechanism by which the material is deposited, that the actual size, height, weight, thickness, shape, profile, and / or spacing of the particle structures 121 within the EM radiation absorption layer 120 may be substantially non-uniform in some non-limiting examples due to possible stacking and / or clustering of monomers and / or atoms. Additionally, while the particle structures 121 within the EM radiation absorption layer 120 are shown as having a given profile, this is illustrative only and is not intended to determine any size, height, weight, thickness, shape, profile, and / or spacing of such particle structures 121.

[0054] In some non-limiting examples, absorption may be concentrated in the absorption spectrum, which is a range of the EM spectrum including but not limited to the visible light spectrum and / or a subrange thereof. In some non-limiting examples, the reliance on polarizers in a multilayer semiconductor device 100 can be reduced by employing an EM radiation absorption layer 120 as part of the multilayer semiconductor device 100.

[0055] Those skilled in the art will understand that in some non-limiting examples, multiple EM radiation absorption layers 120 may be arranged on top of each other, having various aspects and different absorption spectra, whether or not they are separated by additional layers. In this way, the absorption of a particular region of the device may be tuned according to one or more absorption spectra.

[0056] The EM radiation absorbing layer 120 can absorb EM radiation incident over the stacked semiconductor device 100 and thereby reduce reflections. However, those skilled in the art will understand that in some non-limiting examples, the EM radiation absorbing layer 120 can absorb EM radiation emitted by the device 100 incident over it.

[0057] In some non-limiting examples, such particle structures 121 may be present in small amounts, in some non-limiting examples, about a few angstroms or a fraction of an angstrom, on the exposed layer surface 11 of the underlying layer including the first layer 110. 、 It can be formed by depositing a sedimentary material 1231 having an average layer thickness. In some non-limiting examples, the exposed layer surface 11 may have a nucleation-promoting coating (NPC) 1420 (Figure 14C).

[0058] seed In some non-limiting examples, the size, height, weight, thickness, shape, profile, and / or spacing of the particle structures 121 within the EM radiation absorption layer 120 can be specified more or less by depositing seed material as part of the EM radiation absorption layer 120 within a template layer at appropriate locations and / or density and / or deposition stages. In some non-limiting examples, such seed material may act as seeds 122 or heterogeneity to act as nucleation sites, such as when the deposited material 1231 may tend to coalesce around each seed 122 to form the particle structures 121.

[0059] In some non-limiting examples, the seed material may include, but is not limited to, a metal containing ytterbium (Yb) or Ag. In some non-limiting examples, the seed material may have high wettability to the deposited material 1231 deposited thereon and bonded thereto.

[0060] In some non-limiting examples, the seed 122 may be deposited in the template layer across the exposed layer surface 11 of the device 100, and in some non-limiting examples, using an open-mask and / or mask-free deposition process for the seed material.

[0061] EM layer patterned coating Referring here to Figure 2, a version 200 of device 100 is shown with an additional optional layer, and in some non-limiting examples, an EM layer patterned coating 210. e For the purpose of depositing the EM radiation absorption layer 120, the EM layer patterned coating 210 e By interposing a patterned material 1111 (Figure 11) that constitutes the first layer between the exposed layer surface 11 of a shadow mask 1115 (Figure 11), which in some non-limiting examples can be a fine metal mask (FMM), the material can be selectively deposited over the underlying layers, including but not limited to the first layer 110.

[0062] EM layer patterned coating 210 eFollowing selective deposition, the deposited material 1231 is then coated with an EM layer patterned coating 210 using, in some non-limiting examples, open-mask and / or mask-free deposition processes. e The particles 121 may be deposited on the device 200 as an internal particle structure 121, and / or to form it, including an EM radiation absorption layer 120, by accreting them around each seed 122 (if present) that is not covered by the EM radiation absorption layer 120.

[0063] EM layer patterned coating 210 e This can provide a surface with a relatively low initial adhesion probability for the deposited material 1231, and this initial adhesion probability can be substantially lower than the initial adhesion probability for the deposited material 1231 to the exposed layer surface 11 of the lower layer of the device 200.

[0064] Therefore, the lower exposed layer surface 11 is EM layer patterned coating 210 e This may include, but is not limited to, a bonding around the seed 122 that is not covered by, substantially lacking a closed coating 1040 (Figure 10) of the deposit material 1231 that can be deposited to form the particle structure 121.

[0065] In this way, EM layer patterned coating 210 e This allows for selective deposition of the deposited material 1231 by including, but not limited to, the use of a shadow mask 1115, and by including, but not limited to, the use of an open mask and / or mask-free deposition process, thereby enabling the formation of a particle structure 121 by including, but not limited to, coalescing around each seed 122.

[0066] In some non-limiting examples, the deposition material 1231 deposited on the exposed layer surface 11 of the device 200 may have dielectric properties selected to facilitate and / or increase the absorption of EM radiation by the EM radiation absorption layer 120, including, but not limited to, a wavelength range of the EM spectrum, including the visible light spectrum, that, in some non-limiting examples, generally, or in some time-limited examples, corresponds to a particular color, and / or a sub-range and / or wavelength thereof.

[0067] In some non-limiting examples, the EM layer patterning coating 210 e can include a patterning material 1111 that exhibits a relatively low initial adhesion probability with respect to the seed material and / or the deposition material 1231, such that the surface of such an EM layer patterning coating 210 e is used, in some examples, for the purpose of suppressing the deposition of a closed coating 1040 of the deposition material 1231, including uses described herein other than the formation of the EM radiation absorption layer 120, of a non-EM layer patterning coating 210 n and / or may exhibit an increased tendency to deposit the deposition material 1231 (and / or the seed material) as a particle structure 121 with respect to the non-EM layer patterning coating 210 and / or the patterning material 1111 that it may include.

[0068] In some non-limiting examples, the EM layer patterning coating 210 e can include a plurality of materials, at least one of which, without limitation, is a patterning material 1111 that includes a patterning material 1111 that exhibits such a relatively low initial adhesion probability with respect to the deposition material 1231 and / or the seed material as described above.

[0069] In some non-limiting examples, the first material among the multiple materials may be a patterned material 1111 having a first initial adhesion probability to the deposition material 1231 and / or seed material, and the second material among the multiple materials may be a patterned material having a second initial adhesion probability to the deposition material 1231 and / or seed material, wherein the second initial adhesion probability exceeds the first initial adhesion probability.

[0070] In some non-limiting examples, the first and second initial attachment probabilities may be measured using substantially identical conditions and parameters.

[0071] In some non-limiting examples, a first material among multiple materials may be doped, covered, and / or complemented by a second material among multiple materials, so that the second material may act as a seed or heterogeneity to act as a nucleating site for the deposit material 1231 and / or seed material.

[0072] In some non-limiting examples, the second material among the multiple materials may include NPC1420. In some non-limiting examples, the second material among the multiple materials may include, but are not limited to, organic materials containing polycyclic aromatic compounds, and / or, but are not limited to, materials containing nonmetallic elements including O, S, nitrogen (N), or C, whose presence may be considered otherwise as a source material, equipment used for deposition, and / or contaminants in the vacuum chamber environment. In some non-limiting examples, the second material among the multiple materials may be deposited in a layer thickness that is part of a single layer in order to avoid forming its continuous coating 1040. Rather, monomers of such materials teeth They may tend to be separated laterally to form separate nucleation sites for the deposit material 1231 and / or seed material.

[0073] EM layer patterned coating 210 containing a mixture of a first patterned material 11111 and a second patterned material 11112 eTo evaluate the compatibility of the EM radiation absorption layer 120 formed thereby, a series of samples were fabricated. In all samples, the first patterned material 11111 is a nucleation inhibition coating (NIC) having a substantially low initial adhesion probability with respect to the deposition of Ag as the deposited material 1231 material It was. The second patterned material 11112, i.e., the ETL1537 (FIG. 15) material, tends to have a relatively high initial adhesion probability with respect to the deposition of Ag as the deposited material 1231, and in some non-limiting examples, Liq which may be suitable as NPC1420, and LiF, three example materials were evaluated

[0074] For the ETL1537 material, the first patterned material 11111 and the ETL1537 material were co-deposited on an indium tin oxide (ITO) substrate up to an average layer thickness of 20 nm in various ratios, and then the exposed layer surface 11 was exposed to an Ag vapor flux 1232 up to a reference layer thickness of 15 nm, whereby several samples were prepared

[0075] Six samples were prepared in which the volume % ratios of the ETL1537 material and the first patterned material 11111 were 1:99 (ETL sample A), 2:98 (ETL sample B), 5:95 (ETL sample C), 10:90 (ETL sample D), 20:80 (ETL sample E), and 40:60 (ETL sample F), respectively. Additionally, two comparative samples were prepared in which the volume % ratios of the ETL1537 material and the first patterned material 11111 were 0:100 (comparative sample 1) and 100:0 (comparative sample 2), respectively

[0076] ETL sample B showed a total surface coverage of 15.156%, a characteristic size with an average value of 13.6292 nm, a dispersion degree of 2.0462, a number average of particle diameters of 14.5399 nm, and a size average of particle diameters of 20.7989 nm

[0077] ETL sample C showed a total surface coverage of 22.083%, a characteristic size with an average value of 16.6985 nm, a dispersity of 1.6813, a number average of particle diameter of 17.8372 nm, and a size average of particle diameter of 23.1283 nm.

[0078] ETL sample D showed a total surface coverage of 27.0626%, a characteristic size with an average value of 19.4518 nm, a dispersity of 1.5521, a number average of particle diameter of 20.7487 nm, and a size average of particle diameter of 25.8493 nm.

[0079] ETL sample E showed a total surface coverage of 35.5376%, a characteristic size with an average value of 24.2092 nm, a dispersity of 1.6311, a number average of particle diameter of 25.858 nm, and a size average of particle diameter of 32.9858 nm.

[0080] Figures 3A to 3E are SEM micrographs of comparative sample 1, ETL sample B, ETL sample C, ETL sample D, and ETL sample E, respectively.

[0081] Figure 3F is a histogram plotting the histogram distribution of particle structure 121 as a function of characteristic particle size for ETL sample B305, ETL sample C310, ETL sample D315, and ETL sample E320, and each curve fits histograms 306, 311, 316, 321.

[0082] Table 1 below shows the measured transmittance reduction percentage reduction values for various samples at various wavelengths.

[0083]

Table 1

[0084] As can be seen, when the concentration of ETL as the second patterning material 11112 1537 materials was relatively low, the reduction in transmittance was minimal over most wavelengths. However, for ETL 1537 materialsWhen the concentration exceeded approximately 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450nm and 550nm in the visible light spectrum, without a significant reduction in transmittance at wavelengths of 700nm in the IR spectrum and 850nm in the NIR spectrum.

[0085] For Liq, several samples were prepared by co-depositing the first patterned material 11111 and Liq in various ratios onto an ITO substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to a reference layer thickness of 15 nm with Ag vapor flux 1232.

[0086] Four samples were prepared with volume percentage ratios of Liq to the first patterned material 11111 of 2:98 (Liq sample A), 5:95 (Liq sample B), 10:90 (Liq sample C), and 20:80 (Liq sample D), respectively.

[0087] Liq sample A showed a total surface coverage of 11.1117%, a characteristic size with an average value of 13.2735 nm, a dispersion of 1.651, a number-average particle size of 13.9619 nm, and a size-average particle size of 17.9398 nm.

[0088] Liq sample B showed a total surface coverage of 17.2616%, a characteristic size with an average value of 15.2667 nm, a dispersion of 1.7914, a number-average particle size of 16.3933 nm, and a size-average particle size of 21.941 nm.

[0089] Liq sample C showed a total surface coverage of 32.2093%, a characteristic size with an average value of 23.6209 nm, a dispersion of 1.6428, a number-average particle size of 25.3038 nm, and a size-average particle size of 32.4322 nm.

[0090] Figures 3G to 3J are SEM micrographs of Liq sample A, Liq sample B, Liq sample C, and Liq sample D, respectively.

[0091] FIG. 3K is a histogram plotting the histogram distribution of the particle structure 121 as a function of characteristic particle size for Liq sample B325, Liq sample A330, and Liq sample C335, and each curve conforms to histograms 326, 331, 336.

[0092] Table 2 below shows the measured transmittance reduction percentage reduction values for various samples at various wavelengths.

[0093]

Table 2

[0094] As can be seen, when the concentration of Liq as the second patterned material 11112 was relatively low, the reduction in transmittance was minimal over most wavelengths. However, when the Liq concentration exceeded about 5 vol%, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible light spectrum without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum

[0095] For LiF, first the ETL 1537 material was deposited on the ITO substrate to an average layer thickness of 20 nm, and then the first patterned material 111,11 and LiF were co-deposited on the exposed layer surface 11 of the ETL material to an average layer thickness of 20 nm in various ratios, and then the exposed layer surface 11 was exposed to a vapor flux 1232 of Ag to a reference layer thickness of 15 nm to prepare several samples.

[0096] Four samples were prepared with volume % ratios of LiF to the first patterned material 11111 of 2:98 (LiF sample A), 5:95 (LiF sample B), 10:90 (LiF sample C), and 20:80 (LiF sample D), respectively.

[0097] FIGS. 3L to 3O are SEM micrographs of LiF sample A, LiF sample B, LiF sample C, and LiF sample D, respectively.

[0098] Below Table 3 below shows the measured transmittance reduction percentage values ​​for various samples at various wavelengths.

[0099] [Table 3]

[0100] As can be seen, when the concentration of LiF as the second patterning material 11112 was relatively low, the reduction in transmittance was minimal across most wavelengths. However, when the LiF concentration exceeded approximately 10 volume%, a significant reduction (8%) was observed at 450 nm in the visible light spectrum, without significant reductions in transmittance at 700 nm in the IR spectrum and at 850 nm and 1,000 nm in the NIR spectrum.

[0101] Additionally, it was observed that there was virtually no reduction in transmittance at wavelengths above 700 nm for LiF concentrations up to 20% by volume.

[0102] Co-deposition with dielectric materials Although not shown in the figures, in some non-limiting examples, the particle structure 121 that the EM radiation absorption layer 120 may contain may be formed by co-depositing the deposited material 1231 with the co-deposited dielectric material, without using a seed 122.

[0103] In some non-limiting examples, the ratio of deposited material 1231 to codeposited dielectric material may be within the range of at least one of approximately 50:1 to 5:1, 30:1 to 5:1, or 20:1 to 10:1. In some non-limiting examples, the ratio may be at least one of approximately 50:1, 45:1, 40:1, 35:1, 30:1, 25:1, 20:1, 19:1, 15:1, 12.5:1, 10:1, 7.5:1, or 5:1.

[0104] In some non-limiting examples, codeposited dielectric materials may have an initial deposition probability of less than 1 for the deposition of deposit materials 1231 that may be codeposited together.

[0105] In some non-limiting examples, the ratio of deposited material 1231 to codeposited dielectric material may vary depending on the initial adhesion probability of the codeposited dielectric material to the deposition of deposited material 1231.

[0106] In some non-limiting cases, codeposition dielectric materials can be organic materials. In some non-limiting cases, codeposition dielectric materials can be semiconductors. In some non-limiting cases, codeposition dielectric materials can be organic semiconductors.

[0107] In some non-limiting examples, co-depositing the deposition material 1231 together with the co-deposited dielectric material can facilitate the formation of the particle structure 121 in the EM radiation absorption layer 120 in the absence of a template layer containing the seed 122.

[0108] In some non-limiting examples, co-depositing the deposited material 1231 with a co-deposited dielectric material can facilitate and / or increase the absorption by the EM radiation absorption layer 120 of EM radiation in a wavelength range of the EM spectrum, including but not limited to a visible light spectrum, and / or in a subrange and / or wavelength range thereof, which generally includes, but not limited to, a visible light spectrum corresponding to a specific color.

[0109] Absorption around the emission region In some non-limiting examples, the multilayer semiconductor device 100 has at least one emission region 610 (Figure 7A The photoelectronic device 200 may include an organic light-emitting diode (OLED) containing ). In some non-limiting examples, the emission region 610 may be a first electrode which may be an anode. 620 (Figure 15) ) And, in some non-restrictive examples, the second electrode can be the cathode. 640 (Figure 15) )At least one semiconductor layer placed between them 630 (Figure 15) ) It may also be compatible with the following: The anode and cathode are connected to power supply 1505 (Figure 15 ) electrically coupled to at least one semiconductor layer 630 This can generate holes and electrons moving toward each other through the same path. When a pair of holes and electrons combine, EM radiation in the form of photons can be emitted.

[0110] In some non-limiting examples, the EM radiation absorption layer 120 is the second electrode 640 It can be deposited on and / or covering the exposed layer surface 11.

[0111] In some non-limiting examples, the side of the exposed layer surface 11 of device 100 may include a first portion 401 (Figure 4A) and a second portion 402 (Figure 4A). In some non-limiting examples, the second portion 402 may include a portion of the lower exposed layer surface 11 of device 100 that extends beyond the first portion 401.

[0112] In some non-limiting examples, the EM radiation absorption layer 120 may be omitted or may not extend over the first portion 401, but rather extend only over the second portion 402. In some non-limiting examples, as shown in Figure 4A as a non-limiting example, the first portion 401 is more or less version 400 of device 100. a The seed 122 may correspond to a side 1620 (Figure 16) of at least one non-emission region 1902 (Figure 19A), and the seed 122 is a non-EM layer patterned coating 210 n It may be deposited before the deposition of [another substance].

[0113] Such non-limiting configurations may be suitable for enabling and / or maximizing the transmittance of EM radiation emitted from at least one emission region 610 while reducing the reflection of external EM radiation incident on the exposed layer surface 11 of the device 100.

[0114] Therefore, as shown in Figure 4A, the non-EM layer patterned coating 210 n However, in scenarios where the EM radiation absorption layer 120 may be deposited not for the purpose of depositing it, but to limit its lateral extent, such a non-EM layer patterned coating 210 n The patterned material 1111 that may be included may not exhibit a relatively low initial adhesion probability to the deposited material 1231 and / or seed material, as described above.

[0115] Those skilled in the art will understand that in some non-limiting examples, the EM radiation absorbing layer 120 may be omitted from areas of the device 100 other than and / or in addition to the emission area 610 of the device 100, and that in some examples, the second part 402 may correspond to and / or include such other areas.

[0116] In some non-limiting examples, absorption may be concentrated in the absorption spectrum, which is a range of the EM spectrum including but not limited to the visible light spectrum and / or a subrange thereof. In some non-limiting examples, the reliance on polarizers in a multilayer semiconductor device 100 can be reduced by employing an EM radiation absorption layer 120 as part of the multilayer semiconductor device 100.

[0117] Those skilled in the art will understand that in some non-limiting examples, multiple EM radiation absorption layers 120 may be arranged on top of each other, having various aspects and different absorption spectra, whether or not they are separated by additional layers. In this way, the absorption of a particular region of the device may be tuned according to one or more desired absorption spectra.

[0118] The EM radiation absorbing layer 120 can absorb EM radiation incident over the stacked semiconductor device 100 and thereby reduce reflections. However, those skilled in the art will understand that in some non-limiting examples, the EM radiation absorbing layer 120 can absorb EM radiation emitted by the device 100 incident over it.

[0119] In some non-limiting examples, such as those shown in Figure 4A, the non-EM layer patterned coating 210 n If present, the seed 122 may be deposited on the exposed layer surface 11 after the deposition of the seed 122 in the template layer, so that the seed 122 may be deposited over both the first portion 401 and the second portion 402, non-EM layer patterned coating 210 n This can cover the seed 122 deposited over the first portion 401.

[0120] In some non-limiting examples, non-EM layer patterned coating 210 n This can provide a surface that has a relatively low initial adhesion probability not only for the deposition of the deposited material 1231 but also for the deposition of the seed material. In such an example, an exemplary version 400 of device 100 in Figure 4B b As shown, non-EM layer patterned coating 210 n This can be deposited before, but not after, any deposit of seed material.

[0121] Non-EM layer patterned coating 210 over the first portion 401 n After selective deposition, the conductive deposition material 1231 is used in some non-limiting examples to deposit the device using an open-mask and / or mask-free deposition process. 400 It may be deposited on top of, but not limited to, a non-EM layer patterned coating 210 n This includes, but is not limited to, coalescing around each seed 122 (if any) that is not covered by the patterned coating 210, which may remain substantially only within the second portion 402, which may substantially lack the patterned coating 210 as an internal particle structure 121 and / or to form it.

[0122] Non-EM layer patterned coating 210 over the first portion 401 nAfter selective deposition, the seed material may be deposited in the template layer across the exposed layer surface 11 of the device 400 using open-mask and / or mask-free deposition processes, in some non-limiting examples, but the seed 122 is deposited in the non-EM layer patterned coating 210. n It may substantially remain only within the second part 402, which may substantially lack it.

[0123] Furthermore, in some non-limiting examples, the deposited material 1231 can be used in devices using open-mask and / or mask-free deposition processes. 400 The deposited material 1231 can be deposited over the exposed layer surface 11, but the non-EM layer patterned coating 210 n Within the second part 402, which may substantially lack the seeds 122, the particles may remain substantially as a particle structure 121 within it and / or to form it, by including but not limited to merging them around each seed 122.

[0124] Non-EM layer patterned coating 210 n This can provide a surface having a relatively low initial adhesion probability for the deposition material 1231 and / or seed material (if present) to the deposition, which may be substantially lower than the initial adhesion probability for the deposition material 1231 and / or seed material (if present) to the deposition of the exposed layer surface 11 of the lower layer of the device 300 in the second portion 402, within the first portion 401.

[0125] Therefore, the first portion 401 may substantially lack a deposit material 1231 that can form a particulate structure 121 by including, but not limited to, depositing within a closed coating 1040 of any seed 122 and / or a second portion 402 and coalescing around the seed 122.

[0126] Those skilled in the art will understand that even if some of the deposit material 1231 and / or seed material remains in the first portion 401, the amount of seed 122 formed from any such deposit material 1231 and / or seed material in the first portion 401 may be substantially less than that in the second portion 402, and any such deposit material 1231 in the first portion 401 may tend to form discontinuous layers 130 that substantially lack particulate structure 121. Even if a portion of such deposited material 1231 in the first part 401 forms a particle structure 121 around a seed 122 formed from seed material, the size, height, weight, thickness, shape, profile, and / or spacing of any such particle structure 121 may, nevertheless, be considerably different from the size, height, weight, thickness, shape, profile, and / or spacing of the particle structure 121 in the EM radiation absorption layer 120 of the second part 402, and the absorption of EM radiation in the first part 401 may be substantially less than in the second part 402, including but not limited to the wavelength range of the EM spectrum including but not limited to the visible light spectrum, and / or a portion thereof, and / or wavelengths, including but not limited to those corresponding to certain colors.

[0127] In this way, the non-EM layer patterned coating 210 n This allows for selective deposition of the deposited material 1231, including but not limited to using a shadow mask 1115, and allowing for deposition of the deposited material 1231, including but not limited to using an open mask and / or mask-free deposition process, thereby forming a particle structure 121, including but not limited to coalescing around each seed 122.

[0128] Those skilled in the art will understand that a structure exhibiting relatively low reflectivity may be suitable in some non-limiting examples for providing the EM radiation absorbing layer 120.

[0129] Display panel Referring now to Figure 5, a cross-sectional view of the display panel 510 is shown. In some non-limiting examples, the display panel 510 may end up being an optoelectronic device, but not limited to, the outermost layer forming its surface 501. 200 This may include 100 versions of the stacked semiconductor device.

[0130] The surface 501 of the display panel 510 may extend along its sides substantially along a plane defined by the horizontal axis.

[0131] User devices In some non-limiting examples, surface 501, or more precisely the entire display panel 510, can act as the surface of the user device 500, through which at least one EM signal 531 can be exchanged through the interior at an angle to the plane of surface 501. In some non-limiting examples, the user device 500 could be any other electronic device, such as a monitor, television set, and / or smart device, including but not limited to, a computing device such as a smartphone, tablet, laptop, and / or electronic reader, and / or not limited to, an automotive display and / or windshield, a consumer electronics appliance, and / or a medical, commercial, and / or industrial device.

[0132] In some non-limiting examples, the surface 501 is a body in which at least one under-display component 530 may be housed. 502 and / or corresponding to and / or fitting with the opening 521 therein.

[0133] In some non-limiting examples, at least one under-display component 530 may be formed integrally with or as an assembled module with the display panel 510 on its surface opposite to the surface 501. In some non-limiting examples, at least one under-display component 530 may be formed on the exposed layer surface 11 of the substrate 10 of the display panel 510 opposite to the surface 501.

[0134] In some non-limiting examples, at least one opening 513 may be formed within the display panel 510 to allow the exchange of at least one EM signal 531 through the surface 501 of the display panel 510 at an angle with respect to the plane defined by the transverse axis of the display panel 510 or associated layers, including but not limited to the surface 501 of the display panel 510.

[0135] In some non-limiting examples, at least one aperture 513 may be understood to include thickness and / or lack of opacity and / or reduction of a substantially opaque coating otherwise distributed across the display panel 510. In some non-limiting examples, at least one aperture 513 may include a signal-transmitting region as described herein. 520 It can be materialized as such.

[0136] Regardless of how at least one aperture 513 is materialized, at least one EM signal 531 can pass through it so as to pass through the surface 501. As a result, at least one EM signal 531 can be considered to exclude any EM radiation that can extend along a plane defined by the transverse axis, including, but not limited to, any current that may be conducted transversely across the EM radiation absorption layer 120 across the display panel 510.

[0137] Furthermore, those skilled in the art will understand that at least one EM signal 531 can be distinguished from EM radiation itself, including but not limited to electric current and / or the electric field produced thereby, in that at least one EM signal 531 can transmit some informational content, including but not limited to an identifier that distinguishes at least one EM signal 531 from the other EM signals 531, either alone or in combination with other EM signals 531. In some non-limiting examples, the informational content may be transmitted by specifying, modifying, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other properties of at least one EM signal 531.

[0138] In some non-limiting examples, at least one EM signal 531 passing through at least one aperture 513 of the display panel 510 may contain at least one photon, and in some non-limiting examples, may have a wavelength spectrum that is within the range of at least one of the visible light spectrum, the IR spectrum, and / or the NIR spectrum, but is not limited to that.

[0139] In some non-limiting examples, at least one EM signal 531 passing through at least one aperture 513 of the display panel 510 may include ambient light incident on the display panel 510.

[0140] In some non-limiting examples, at least one EM signal 531 exchanged through at least one aperture 513 of the display panel 510 may be transmitted and / or received by at least one under-display component 531.

[0141] In some non-limiting examples, at least one under-display component 530 is a single signal transparent area 520 It may have a larger size, but has multiple signal-transmitting regions 520 Furthermore, they may also be located beneath at least one emission region 610 extending between them. Similarly, in some non-limiting examples, at least one under-display component 531 may have a size larger than a single opening among at least one aperture 513.

[0142] In some non-limiting examples, at least one under-display component 530 receives at least one EM signal 531 that passes through at least one aperture 513 beyond the user device 500. r Receiver 530 adapted to receive and process r It may be equipped with such a receiver 530 r Non-exclusive examples include, but are not limited to, under-display cameras (UDCs) and / or sensors, including IR sensors or detectors, NIR sensors or detectors, LIDAR detection modules, fingerprint detection modules, light detection modules, IR (proximity) detection modules, iris recognition detection modules, and / or face recognition detection modules, and / or parts thereof.

[0143] In some non-limiting examples, at least one under-display component 530 transmits at least one EM signal 531 that passes through at least one aperture 513 beyond the user device 500. t Transmitter 530 adapted to emit t It may be equipped with such a transmitter 530 t A non-limiting example of this includes, but is not limited to, an EM radiation source, including a built-in flash, flashing device, IR emitter, and / or NIR emitter, and / or a LIDAR detection module, fingerprint detection module, light detection module, IR (proximity) detection module, iris recognition detection module, and / or face recognition detection module, and / or a part thereof.

[0144] In some non-limiting examples, without limitation, transmitter 530 t A transmitted EM signal 531 emitted by at least one under-display component 530 comprising t At least one EM signal 531, including the user device 500, that passes through at least one aperture 513 of the display panel 510 is emitted from the display panel 510 and emitted EM signal 531 r As such, the signal passes through at least one aperture 513 of the display panel 510 to the receiver 530. r It can return to at least one under-display component 530 which has the following features.

[0145] In some non-limiting examples, the under-display component 530 may include an IR emitter and an IR sensor. In some non-limiting examples, such an under-display component 530 may include, as part of, a component of, or a module, a dot matrix projector, a ToF sensor module capable of operating as direct time-of-flight (ToF) and / or indirect ToF, a VCSEL, a floodlight illuminator, an NIR imager, a bent optical system, and a diffraction grating.

[0146] In some non-limiting examples, there may be multiple underdisplay components 530 within the user device 500, and the first underdisplay component of the multiple underdisplay components 530 transmits at least one EM signal 531 so that it passes through at least one aperture 513 beyond the user device 500. t Transmitter 530 for emitting t The second under-display component among the multiple under-display components 530 receives at least one EM signal 531 r Receiver 530 for receiving r This includes, in some non-limiting examples, such as transmitter 530 t and receiver 530 r This can be embodied in a single common under-display component 530.

[0147] This can be seen in a non-limiting example in Figure 6A, where the user device 500 is shown having a display panel 510 having at least one display unit 615 adjacent to, in some non-limiting examples, at least one display unit 615 separated by, in a lateral range (shown vertically in the figure) by, at least one signal-exchanged display unit 616. The user device 500 transmits at least one EM signal 531 t to at least one first signal-transmitting region in the first signal exchange display unit 620 520 At least one transmitter 530 for transmitting across plane 501 through t And at least one received EM signal 531 r to at least one second signal-transmitting region in the second signal exchange display unit 616 520 Receiver 530 for receiving through r It accommodates and. In some non-limiting examples, at least one first and second signal exchange indicator 616 may be the same.

[0148] Figure 6B shows a plan view of a user device 500 in a non-limiting example, including a display panel 510 that defines the surface of the device. The device 500 has as few as one transmitter 530 arranged across surface 501. t and at least one receiver 530 r It accommodates. Figure 6C shows a cross-sectional view of device 500 along line 6C-6C.

[0149] The display panel 510 includes a display unit 615 and a signal-exchange display unit 616. The display unit 615 includes a plurality of emission areas 610. The signal-exchange display unit 616 includes a plurality of emission areas 610 and a plurality of signal-transmitting areas. 520 The display unit 615 and the signal-exchanged display unit 616 have multiple emission areas 610, which are part of the display panel. 510 subpixel 64x (Figure 6H) This corresponds to multiple signal-transmitting regions within the signal exchange display unit 616. 520It is configured to allow signals or light having wavelengths corresponding to the IR range of the electromagnetic spectrum to pass through the entire cross-section. At least one transmitter 530 t and at least one receiver 530 r These are arranged behind the corresponding signal-exchange display units 616 so that the IR signals are emitted and received, respectively, as they pass through the signal-exchange display units 616 of panel 510. In the illustrated non-limiting example, at least one transmitter 530 t and at least one receiver 530 r Each of these is shown having a corresponding signal exchange indicator unit 616 located in the signal transmission path.

[0150] Figure 6D shows a plan view of user device 500 by another non-limiting example, with at least one transmitter 530 t and at least one receiver 530 r Both are arranged behind the common signal exchange indicator 616. As a non-limiting example, the signal exchange indicator 616 is located behind the transmitter 530 t and receiver 530 r It may be elongated along at least one constituent axis in the plan view so as to extend across both sides. Figure 6E is the same as Figure 6D. 6E-6E This shows a cross-sectional view along the line.

[0151] Figure 6F shows a plan view of a user device 500 according to yet another non-limiting example, in which the display panel 510 further includes a non-display area 551. More specifically, the display panel 510 includes at least one transmitter 530 t and at least one receiver 530 r This includes, and each of these is arranged behind the corresponding signal exchange indicator unit 616. The non-display unit 551 is, in the plan view, two signal exchange indicator units 616They are arranged adjacent to and between them. In the non-display section 551, the presence of any light-emitting regions is generally omitted. In some non-limiting examples, the device 500 houses a camera 540 arranged in the non-display section 551. In some non-limiting examples, the non-display section 551 includes a through-hole section 552 arranged to overlap with the camera 540. In the panel 510 within the through-hole section 552, the presence of one or more layers, coatings, and / or components present in the display section 615 and / or the signal-exchange display section 616 may be omitted. In a non-limiting example, in the panel 510 within the through-hole section 552, the presence of one or more backplane and / or frontplane components may be omitted, otherwise the presence of backplane and / or frontplane components may interfere with the image captured by the camera 540. In some non-limiting examples, the cover glass of panel 510 extends substantially over the display section 615, the signal-exchange display section 616, and the through-hole section 552, so as to be present in all of the aforementioned portions of panel 510. In some non-limiting examples, panel 510 further includes a polarizer (not shown), which may extend substantially over the display section 615, the signal-exchange display section 616, and the through-hole section 552, so as to be present in all of the aforementioned portions of panel 510. In some non-limiting examples, the presence of a polarizer in the through-hole section 552 may be omitted to improve the transmission of light through such portions of panel 510.

[0152] In some non-limiting examples, the non-display portion 551 of panel 510 further includes a non-through-hole portion 553. In some non-limiting examples, the non-through-hole portion 553 may be arranged in a plan view between the through-hole portion 552 and the signal-exchanging display portion 616. In some non-limiting examples, the non-through-hole portion 553 may surround at least part or all of the through-hole portion 552. Although not specifically shown, device 500 may include additional modules, components, and / or sensors in the portion of device 500 corresponding to the non-through-hole portion 553 of the display panel 510.

[0153] In some non-limiting examples, the signal-exchanged display unit 616 may reduce or substantially omit the presence of backplane components that would otherwise interfere with or reduce the transmission of light through the signal-exchanged display unit 616. In some non-limiting examples, the signal-exchanged display unit 616 may have a TFT structure 701 (Figure 7A) , and / or, the presence of TFT components including, but not limited to, metal trace lines, capacitors, and / or other opaque or light-absorbing elements may be omitted. In some non-limiting examples, the light-emitting region 610 within the signal-exchange display unit 616 may be electrically coupled to one or more TFT structures and / or TFT components located within the non-penetrating portion 553 of the non-display unit 551. Specifically, the TFT structures and / or TFT components for operating the subpixels within the signal-exchange display unit 616 may be relocated outside the signal-exchange display unit 616 and within the non-penetrating portion 553 of the panel 510 so that relatively high transmission of light in at least the IR and / or NIR wavelength range can be achieved through the non-emitting area within the signal-exchange display unit 616. In some non-limiting examples, the TFT structures and / or TFT components within the non-penetrating portion 553 may be electrically coupled to the subpixels within the signal-exchange display unit 616 via conductive traces. In some non-limiting examples, the transmitter 530 t and receiver 530 r These are arranged in the plan view adjacent to or near the non-through-hole portion 553 so as to reduce the distance over which current travels between the TFT structure and / or TFT components and the subpixels.

[0154] In some non-limiting examples, the light-emitting region 610 is configured such that at least one of the aperture ratio and pixel density of the light-emitting region is the same between the display unit 615 and the signal-exchange display unit 616. In some non-limiting examples, the light-emitting region 610 is configured such that both the aperture ratio and pixel density of the light-emitting region are the same between the display unit 615 and the signal-exchange display unit 616. In some non-limiting examples, the pixel density may be greater than approximately 300 ppi, 350 ppi, 400 ppi, 450 ppi, 500 ppi, 550 ppi, or 600 ppi. In some non-limiting examples, the aperture ratio may be greater than approximately 25%, 27%, 30%, 33%, 35%, or 40%. In some non-limiting examples, the light-emitting region 610 or pixels of panel 510 are used by the user to access the panel. 510 To reduce the possibility of detecting a visual difference between the display unit 615 and the signal-exchanged display unit 616, the display unit 615 and the signal-exchanged display unit 616 may be shaped and arranged substantially identically.

[0155] Figure 6H shows an enlarged plan view of a portion of panel 510 in a non-limiting example. Specifically, it shows the configuration and layout of emission regions 264, represented as subpixels 610x, in the display unit 615 and the signal-switched display unit 616. Each portion is provided with multiple emission regions 610, each being a subpixel 64x Corresponds to subpixels in some non-restrictive examples. 64x These are, respectively, R (red) subpixels. 641 G (green) subpixel 642 , and / or B (blue) subpixel 643 It can correspond to the adjacent subpixels. The signal exchange display unit 616 has adjacent subpixels. 64x Between, multiple signal-transmitting regions 520 It is provided.

[0156] In Figure 6H, the area between the display unit 615 and the signal-exchange display unit 616 is indicated by a wavy broken line. In some non-limiting examples, the display panel 510 further includes a transition region (not shown) between the display unit 615 and the signal-exchange display unit 616, and an emission region 610 and / or a signal-transmitting region. 520 The configuration may differ from that of the adjacent display unit 615 and / or signal-exchange display unit 616. In some non-limiting examples, the presence of such transition regions may be omitted, so that the emission region 610 is provided in a substantially continuous repeating pattern across the display unit 615 and the signal-exchange display unit 616.

[0157] Although not shown in the diagram, in some non-limiting examples, at least one signal-transmitting region 520 In some non-limiting examples, at least in regions laterally separated from neighboring emission regions 610, and in some non-limiting examples, the pixel definition layer (PDL) 740 of the TFT insulating layer 709 (Figure 7) of The thickness may be reduced to improve the transmittance and / or transmittance angle with respect to and through the layer of surface 501.

[0158] Example version 700 of user device 500 a As shown in the simplified block diagram Figure 7A, in some non-limiting examples, at least one side 1610 of the emission region 610 (Figure 16 In some non-limiting examples, the associated at least one TFT structure 701 may be formed from copper (Cu) and / or transparent conducting oxide (TCO) to drive the emission region 610 along data lines and / or scan lines (not shown). to It extends across and can include it.

[0159] In some non-limiting examples, at least one received EM signal 531 r This is at least one transmitted EM signal 531 tIt includes at least a fragment of which is reflected from the external surface or otherwise returned to the user device 500 by the external surface.

[0160] In some non-limiting examples, the user device 500 has at least one transmitter 530 t to at least one transmitted EM signal 531 t The device 500 is configured to emit a signal which passes through the display panel 510 so that it is incident on the face, contour, or other part of the user 60. At least one transmit EM signal 531 is incident on the user 60. t A fragment of the EM signal 531 is reflected from user 60 or otherwise returned by user 60 to at least one received EM signal 531. r This generates, which then passes through the display panel 510, and therefore to at least one receiver 530 r It is received and / or detected by.

[0161] In some non-limiting examples, at least one transmitter 530 t At least one transmitted EM signal 531 reflected from user 60 t To generate and associated with at least one received EM signal 531 r By generating (collectively EM signal pair 531), at least one receiver 530 r It is detected by and thereby provides biometric authentication for user 60.

[0162] In some non-limiting examples, at least one transmitter 530 t This is at least one transmitted IR signal 531 t As such, it may be an IR emitter for emitting at least one EM signal 531 having a wavelength range in the IR spectrum and / or NIR spectrum. In some non-limiting examples, at least one receiver 530 r is at least one received IR signal 531 rThis could be an IR sensor for receiving at least one EM signal 531 having wavelengths in the IR spectrum and / or NIR spectrum.

[0163] In some non-limiting examples, the signal-transmitting region of the display panel 510 520 They are arranged in an array, and at least one transmitter 530 t and / or at least one receiver 530 r This means that at least one EM signal pair 531 associated with these signals is transmitted through at least one signal-transmitting region of the display panel 510. 520 It is positioned within the user device 500 behind the display panel 510 so as to be configured to pass through.

[0164] In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 r This means that at least one EM signal pair 531 associated with these is in a common signal transmission region. 520 It is positioned to allow passage through. In some non-limiting examples, at least one transmitter 530 t and at least one receiver 530 r These are associated with at least one EM signal pair 531 which has a different signal transmission region. 520 It is positioned to allow passage through it.

[0165] In the display panel 510, at least one emission region 610 may be associated with a second portion 402 on the side of the display panel 510, and the underlying exposed layer surface 11 may have a closed coating 1040 of the deposition material 1231 deposited thereon.

[0166] In the display panel 510, at least one signal-transmitting region 520 This may be associated with the first portion 401 on the side of the display panel 510, and the EM layer patterned coating 210 emay be disposed on the exposed layer surface 11 of the lower layer, and the exposed layer surface 11 has an EM radiation absorbing layer 120 disposed thereon and including a discontinuous layer 130 for at least one particle structure 121.

[0167] In some non-limiting examples, at least one signal transmission region 520 may substantially lack a closed coating 1040 of the deposited material 1231.

[0168] In some non-limiting examples, at least one signal transmission region 520 while facilitating absorption of EM radiation in at least the wavelength range of the visible light spectrum, can allow passage of EM radiation in at least the wavelength range of the IR spectrum.

[0169] This allows at least a portion of these (or other) EM signals 531, including at least one transmitted IR signal 531 t and at least one received IR signal 531 r to be absorbed up to the range where they are within at least the visible light spectrum wavelength range while being transmitted through the middle up to at least the range where they are within the IR spectrum, where EM signals 531 (not shown) from an external source can be incident on the display panel 510.

[0170] In this way, the IR emitter 530 t and the IR detector 530 r can be at least partially hidden from the user 60, including but not limited to providing biometric authentication of the user 60 without substantially preventing at least one transmitted IR signal 531 t and at least one received IR signal 531 r from being transmitted through the display panel 510.

[0171] Such a configuration of the display panel 510, for example, can, without substantially degrading the user experience, the IR emitter 530 t and / or the IR detector 530r is positioned within the user device 500 and has at least one signal transmission region 520 is positioned within the lateral range of the display panel 510, and / or from the user 60 to the IR emitter 530 t and / or the IR detector 530 r can be advantageous for facilitating hiding of the same.

[0172] Those skilled in the art will understand that, in some non-limiting examples, the at least one under-display component 530 including, but not limited to, the IR emitter 530 t and / or the IR detector 530 r can be sized such that it is under not only a single signal transmission region 520 but also a plurality of signal transmission regions 520 and / or at least one emission region 610 extending therebetween. In such examples, the at least one under-display component 530 may be positioned under such a plurality of signal transmission regions 520 and may exchange an EM signal 531 passing through the display panel 510 at an angle with respect to and through such a plurality of signal transmission regions 520 thereof.

[0173] In some non-limiting examples, in at least a part of the emission region 610, at least one semiconductor layer 630 can be deposited on the exposed layer surface 11 of the surface 501 having, in some non-limiting examples, a first electrode 620 thereof.

[0174] In some non-limiting examples, the exposed layer surface 11 of the surface 501 has, in some non-limiting examples, at least one semiconductor layer 630This may include, but is not limited to, the use of a shadow mask 1115 to expose the vapor flux 1112 (Figure 11) of the patterning material 1111, thereby forming a patterned coating 210 on the first portion 401. Whether or not the shadow mask 1115 is employed, the patterned coating 210 has substantially signal-transmitting regions on its sides. 520 It is used in a restricted manner.

[0175] In some non-limiting examples, the exposed layer surface 11 of surface 501 may be exposed to the vapor flux 1232 of the deposited material 1231, including, but not limited to, open-mask and / or mask-free deposition processes.

[0176] In some non-limiting examples, at least one signal-transmitting region 520 Side 1620 Inside The exposed layer surface 11 of surface 501 may include a patterned coating 210. Thus, at least one signal-transmitting region 520 Within the side surface 1620, the vapor flux 1232 of the deposited material 1231 incident on the exposed layer surface 11 can form at least one particulate structure 121 on the exposed layer surface 11 of the patterned coating 210 as an EM radiation absorption layer 120. In some non-limiting examples, the surface coverage of the EM radiation absorption layer 120 may be at least one of approximately 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0177] At the same time, the patterned coating 210 has substantially non-emission areas 1902 on its side. to Because it is limited, in some non-limiting examples, the surface within the side 1610 of the emission region 610 501 The exposed layer surface 11 is at least one semiconductor layer 630 It may include the following: Therefore, within the second portion 402 of the side surface 1610 of at least one emission region 610, the vapor flux 1232 of the deposited material 1231 incident on the exposed layer surface 11 is the second electrode 640This allows for the formation of a closed coating 1040 of the deposited material 1231.

[0178] Therefore, in some non-limiting examples, the patterned coating 210 has a dual purpose, namely, to provide a base for the deposition of the EM layer radiation absorption layer 120 in the first portion 401. e Furthermore, without employing a shadow mask 1115 during the deposition of the deposition material 1231, the second electrode 640 Non-EM layer patterning coating 210 to limit the lateral range of deposition of the deposited material 1231 to a second portion 402 n It can function as such.

[0179] In some non-limiting examples, the average film thickness of the closed coating 1040 of the deposited material 1231 may be at least one of approximately 5 nm, 6 nm, or 8 nm. In some non-limiting examples, the deposited material 1231 may contain MgAg.

[0180] In some non-limiting examples, the second electrode 640 is the transition region 705 The patterned coating 210 inside may be partially covered and extended.

[0181] Details of the EM radiation absorption layer In some non-limiting examples, the EM radiation absorption layer 120 may include, but is not limited to, the use of a mask-free and / or open-mask deposition process for the EM layer patterned coating 210. e It may comprise at least one particle structure 121 deposited on top of it.

[0182] While we do not wish to be limited to any particular theory, forming a closed coating 1040 of deposited material 1231 on top of EM layer patterned coating 210 e Although it can be substantially inhibited above, in some non-limiting examples, the EM layer patterned coating 210 eWhen exposed to the deposit of the deposit material 1231 above it, some vapor monomers of the deposit material 1231 teeth Ultimately, it can be assumed that at least one particle structure 121 of the deposited material 1231 can be formed thereon.

[0183] Therefore, in some non-limiting examples, the EM radiation absorption layer 120 may include a discontinuous layer 130 containing at least one particle structure 121 of the deposited material 1231. In some non-limiting examples, at least some of the particle structures 121 may be separated from each other. In other words, in some non-limiting examples, the discontinuous coating 130 may include features that include particle structures 121 that can be physically separated from each other so that the EM radiation absorption layer 120 does not form a closed coating 1040.

[0184] In some non-limiting examples, such an EM radiation absorbing layer 120 is thus formed as a particle structure 121 and an EM layer patterning coating 210 within a display panel 510. e and at least one coating layer 710 and The interface between them may include a thin dispersed layer of the deposited material 1231, inserted substantially over its lateral range.

[0185] In some non-limiting examples, at least one of the particle structures 121 of the deposited material 1231 within the EM radiation absorption layer 120 is the EM layer patterning coating 210 e The exposed layer surface 11 may be in physical contact with the EM radiation absorption layer 120. In some non-limiting examples, substantially all of the particle structure 121 of the deposited material 1231 within the EM radiation absorption layer 120 is in physical contact with the EM layer patterned coating 210. e It may be in physical contact with the exposed layer surface 11.

[0186] Although not bound by any particular theory, somewhat surprisingly, EM layer patterned coating 210 eThe presence of such a thin dispersed EM radiation absorbing layer 120 of the deposited material 1231, including but not limited to a discontinuous layer 130 on the exposed layer surface 11, including but not limited to a metallic particle structure 121, and including but not limited to at least one particle structure 121, has been found to exhibit one or more different properties and associated different behaviors, including but not limited to the optical effects and properties of the display panel 510, as discussed herein. In some non-limiting examples, such effects and properties are found in the EM layer patterned coating 210 e The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of the above particle structure 121 can be controlled to some extent by a sensible choice of at least one of these.

[0187] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation absorption layer 120 is, in some non-limiting examples, at least one property of the patterned material 1111, EM layer patterned coating 210 e Average film thickness, EM layer patterned coating 210 e Introduction of non-uniformity in and / or EM layer patterned coating 210 e The patterned material 1111 can be controlled by a sensible selection of at least one of the deposition environments, including but not limited to temperature, pressure, duration, deposition rate, and / or deposition process.

[0188] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation absorption layer 120 is, in some non-limiting examples, at least one property of the deposited material 1231, EM layer patterned coating 210 eThe extent to which the deposit material 1231 may be exposed to the deposition (which in some non-limiting examples may be specified with respect to the thickness of the corresponding discontinuity layer 130), and / or can be controlled by at least one sensible choice of depositional environment, including but not limited to the temperature, pressure, duration, deposition rate, and / or method of deposition for the deposit material 1231.

[0189] In some non-limiting examples, at least one particle structure 121 of the EM radiation absorption layer 120 may be provided to exhibit greater absorption in at least a wavelength subrange of the visible light spectrum than in the IR and / or NIR spectrum. In some non-limiting examples, at least one particle structure 121 of the EM radiation absorption layer 120 may be provided to absorb EM radiation in at least a wavelength subrange of the visible light spectrum and substantially not absorb EM radiation in the IR and / or NIR spectrum.

[0190] In some non-limiting examples, an EM radiation absorption layer 120 of a deposited material 1231, which includes but is not limited to at least one particle structure 120, may include and / or act as such a UVA absorption coating 120 that can absorb EM radiation in the UVA spectrum.

[0191] In some non-limiting examples, there may be merit in providing such a UVA-absorbing coating 120 to reduce and / or mitigate the transmission of UVA radiation through the display panel 510. In a non-limiting example, the presence of such a UVA-absorbing coating 120 can improve the image quality captured by the under-display component 530 through the display panel 510 by reducing interference caused by UVA radiation.

[0192] In some non-limiting examples, the EM radiation absorption layer 120 may absorb at least a portion of the UV spectrum and at least a portion of the visible light spectrum of EM radiation, but absorption of EM radiation in the IR and / or NIR spectrum is reduced and / or substantially absent.

[0193] In some non-limiting examples, optical effects can be described in terms of their influence on transmission and / or absorption wavelength spectra, including wavelength ranges and / or peak intensities.

[0194] Additionally, while the presented model may suggest certain effects on the transmission and / or absorption of EM radiation passing through such an EM radiation absorption layer 120, in some non-limiting examples, such effects may reflect local effects that cannot be reflected by broad, observable criteria.

[0195] In some non-limiting examples, the characteristic size of the particle structure 121 within the EM radiation absorption layer 120 (or the observation window used) may reflect a statistical distribution.

[0196] In some non-limiting examples, the absorption spectral intensity may tend to be proportional to the deposition density of the EM radiation absorption layer 120 for a specific distribution of characteristic sizes of the particle structures 121.

[0197] In some non-limiting examples, the characteristic sizes of particle structures 121 within the EM radiation absorption layer 120 (or the observation window used) may be concentrated around a single value and / or within a relatively narrow range.

[0198] In some non-limiting examples, the characteristic size of the particle structure 121 within the EM radiation absorption layer 120 (or the observation window used) may be concentrated around at least one value and / or within at least one relatively narrow range. In non-limiting examples, the particle structure of the EM radiation absorption layer 120 may exhibit multimodal behavior such that there are multiple different values ​​and / or ranges around which the characteristic size of the particle structure 121 within the EM radiation absorption layer 120 (or the observation window used) may be concentrated.

[0199] In some non-limiting examples, the EM radiation absorption layer 120 may include a first at least one particle structure 1211 having a characteristic size in a first range and a second at least one particle structure 1212 having a characteristic size in a second range. In some non-limiting examples, the first characteristic size range may correspond to a size of about 50 nm or less, and the second characteristic size range may correspond to a size of at least 50 nm. In a non-limiting example, the first characteristic size range may correspond to a size of about 1 to 49 nm, and the second characteristic size range may correspond to a size of about 50 to 300 nm. In some non-limiting examples, the majority of the first particle structure 1211 may have a characteristic size in at least one of the ranges of about 10 to 40 nm, 5 to 30 nm, 10 to 30 nm, 15 to 35 nm, 20 to 35 nm, or 25 to 35 nm. In some non-limiting examples, the majority of the second particle structure 1212 may have characteristic sizes in at least one of the following ranges: approximately 50–250 nm, 50–200 nm, 60–150 nm, 60–100 nm, or 60–90 nm. In some non-limiting examples, the first particle structure 1211 and the second particle structure 1212 may be scattered amongst themselves.

[0200] To study the formation of such multimodal particle structures 121, a series of five samples were fabricated. Each sample consisted of an organic semiconductor layer approximately 20 nm thick on a glass substrate. 630 Next, an Ag layer approximately 34 nm thick, followed by an EM layer patterned coating 210 eA layer is deposited, followed by an EM layer patterned coating 210. e The samples were prepared by exposing their surfaces to Ag vapor flux 1232. SEM images of each sample were taken at various magnifications.

[0201] Figure 8A shows an SEM image 800 of the first sample and a magnified, further SEM image 805. As can be seen from image 800, there are several first particle structures 1211 that may tend to concentrate around a first smaller characteristic size, and a smaller number of second particle structures 1212 that may tend to concentrate around a second larger characteristic size. A plot 810 of the count of particle structures 121 as a function of characteristic particle size can show that the majority of the first particle structures 1211 may be concentrated around approximately 30 nm. Analysis shows that the surface coverage of the observation window in image 800 for first particle structures 1211 with a characteristic size of approximately 50 nm or less was approximately 38%, compared to approximately 1% for second particle structures 1212 with a characteristic size of at least approximately 50 nm.

[0202] Figure 8B shows an SEM image 820 of the second sample and a magnified, further SEM image 825. As can be seen from image 820, several first particle structures 1211 continue to exist, which may tend to concentrate around the first characteristic size, while several second particle structures 1212 may tend to concentrate around the second characteristic size and may become larger. Furthermore, such second particle structures 1212 may tend to become more prominent. A plot 830 of the count of particle structures 121 as a function of characteristic particle size can show two distinguishable peaks: a large peak for first particle structures 1211 concentrated around approximately 30 nm and a smaller peak for second particles 1212 concentrated around approximately 75 nm. The analysis shows that the surface coverage of the observation window in image 820 of the first particle structure 1211, which has a characteristic size of approximately 50 nm or less, was approximately 23%, while the surface coverage of the observation window in image 820 of the second particle structure 1212, which has a characteristic size of at least approximately 50 nm, was approximately 10%.

[0203] Figure 8C shows an SEM image 840 of the third sample and a magnified, further SEM image 845. As can be seen from image 840, several first particle structures 1211 remain, which may tend to concentrate around the first characteristic size, while several second particle structures 1212, which may tend to concentrate around the second characteristic size, can be even larger than in the second sample. A plot 850 of the count of particle structures 121 as a function of characteristic particle size may show two distinguishable peaks: a larger peak for the first particle structures 1211 concentrated around approximately 30 nm, and a smaller (but larger than shown in plot 830) peak for the second particle structures 1212 concentrated around approximately 75 nm. The analysis shows that the surface coverage of the observation window in image 840 of the first particle structure 1211, which has a characteristic size of approximately 50 nm or less, was approximately 19%, while the surface coverage of the observation window in image 840 of the second particle structure 1212, which has a characteristic size of at least approximately 50 nm, was approximately 21%.

[0204] Figure 8D shows SEM image 860 of the fourth sample and a magnified further SEM image 865. As can be seen from image 860, several first particle structures 1211 continue to exist, which may tend to concentrate around a first characteristic size, while several second particle structures 1212 may be larger, which may tend to concentrate around a second characteristic size. A plot 870 of the count of particle structures 121 as a function of characteristic particle size can show two distinguishable peaks: a large peak for the first particle structures 1211 concentrated around approximately 20 nm and a smaller peak for the second particle structures 1212 concentrated around approximately 85 nm. Analysis shows that the surface coverage of the observation window in image 860 for the first particle structures 1211 with a characteristic size of approximately 50 nm or less was approximately 14%, compared to approximately 34% for the second particle structures 1212 with a characteristic size of at least approximately 50 nm.

[0205] Figure 8E shows an SEM image 880 of the fifth sample and a magnified, further SEM image 885. As can be seen from image 880, several first particle structures 1211 continue to exist, which may tend to concentrate around a first characteristic size, while several second particle structures 1212 may become larger, which may tend to concentrate around a second characteristic size. In fact, second particle structures 1212 may tend to become dominant. A plot 890 of the count of particle structures 121 as a function of characteristic particle size shows two distinguishable peaks: a large peak for first particle structures 1211 concentrated around approximately 15 nm and a smaller peak for second particle structures 1212 concentrated around approximately 85 nm. The analysis shows that the surface coverage of the observation window in image 880 of the first particle structure 1211, which has a characteristic size of approximately 50 nm or less, was approximately 3%, while the surface coverage of the observation window in image 880 of the second particle structure 1212, which has a characteristic size of at least approximately 50 nm, was approximately 55%.

[0206] While we do not wish to be limited to any particular theory, in some non-limiting examples, such multimodal behavior of the EM radiation absorption layer 120 is similar to that of the EM layer patterned coating 210. e It can be assumed that multiple nucleation sites for the deposited material 1231 can be generated by introducing them, including but not limited to doping, coating, and / or complementing the patterned material 1111 with another material that can act as seeds or heterogeneities that can act as such nucleation sites. In some non-limiting examples, a first particle structure 1211 of a first characteristic size is generated in an EM layer patterned coating 210 where such nucleation sites are substantially absent. e It is possible that a tendency may be formed on top, and it can be hypothesized that a second particle structure 1212 of a second characteristic size may tend to form at the location of such a nucleation site.

[0207] Those skilled in the art will understand that other mechanisms may exist that can generate such multimodal behavior.

[0208] The above also assumes, as a simplification, that the NPs modeling each particle structure 121 may be perfectly spherical. Typically, the shape of the particle structures 121 within the EM radiation absorption layer 120 (or the observation window used) can be highly dependent on the deposition process. In some non-limiting examples, the shape of the particle structures 121 can have a significant effect on the SP excitations it exhibits, including, but not limited to, the width, wavelength range, and / or intensity of the resonance band, and consequently, its absorption band.

[0209] In some non-limiting examples, the material surrounding the EM radiation absorption layer 120 may affect the optical effects produced by the emission and / or transmission of EM radiation and / or EM signals 531 passing through the EM radiation absorption layer 120, whether it is placed underneath or later on the exposed surface 11 of the EM radiation absorption layer 120 (so that the particle structure 121 can be deposited on its exposed surface 11).

[0210] An EM radiation absorption layer 120 containing a particle structure 121 may be made of a material having a low refractive index. e Placing the EM radiation absorbing layer 120 on and / or in physical contact with and / or in close proximity to the exposed layer surface 11 can be assumed, in some non-limiting examples, to shift the absorption spectrum of the EM radiation absorbing layer 120.

[0211] The EM radiation absorption layer 120 may be arranged so as to be on the EM radiation absorption layer 120 and / or so as to be in physical contact with the EM radiation absorption layer 120 and / or so as to be in close proximity to the EM radiation absorption layer 120, so that the display panel 510 may be configured such that the absorption spectrum of the EM radiation absorption layer 120 may substantially overlap with and / or not overlap with at least the wavelength range of the EM spectrum, including but not limited to the visible light spectrum, UV spectrum and / or IR spectrum, in the presence of the EM radiation absorption layer 120, and / or not so.

[0212] In some non-limiting examples, EM layer patterned coating 210 e and / or patterned material 1111, in some non-limiting examples, when deposited as a film and / or coating within a display panel 510 and an EM layer patterned coating 210 e Under conditions similar to those of deposition, the deposited material 1231 may have a first surface energy that is less than or equal to the second surface energy, and in some non-limiting examples, when deposited in a display panel 510 as a film and / or coating, and under conditions similar to those of deposition of the EM radiation absorption layer 120.

[0213] In some non-restrictive examples, the quotient of the second surface energy / the first surface energy can be at least one of approximately 1, 5, 10, or 20.

[0214] In some non-limiting examples, the surface coverage of the area of ​​the EM layer patterned coating 210 by at least one particle structure 121 deposited thereon may be below the maximum threshold coverage.

[0215] In some non-limiting examples, the particle structure 121 is at an angle to the layer of surface 501 in the signal-transmitting region of surface 501 of the display panel 510. 520In the context of enabling the transmission of EM signals 531 of IR and / or NIR spectra passing through, it may have a characteristic size that is within the range of at least one of approximately 1-200 nm, 1-150 nm, 1-100 nm, 1-50 nm, 1-40 nm, 1-30 nm, 1-20 nm, 5-20 nm, or 8-15 nm.

[0216] In some non-limiting examples, the particle structure 121 is at an angle to the layer of surface 501 in the signal-transmitting region of surface 501 of the display panel 510. 520 In the context of enabling the transmission of EM signals 531 of IR and / or NIR spectra passing through, the feature size may have at least one mean and / or median size among approximately 5-100 nm, 5-50 nm, 5-40 nm, 5-30 nm, 5-25 nm, 5-20 nm, or 8-15 nm. As a non-limiting example, such mean and / or median dimensions may correspond to the mean and / or median diameters of the particle structure 121 of the EM radiation absorption layer 120, respectively.

[0217] In some non-limiting examples, the majority of the particle structure 121 is in the signal-transmitting region of surface 501 of the display panel 510 at a certain angle to the layer of surface 501. 520 In the context of enabling the transmission of EM signals 531 of IR and / or NIR spectra passing through, it may have at least one maximum feature size of approximately 100 nm, 80 nm, 50 nm, 40 nm, 30 nm, 25 nm, 20 nm, or 15 nm or less.

[0218] In some non-limiting examples, the proportion of particle structures 121 that may have such maximum feature size is such that the signal-transmitting region of surface 501 of the display panel 510 at a certain angle to the layer of surface 501. 520 In the context of enabling the transmission of EM signals 531 of IR and / or NIR spectra passing through, the area of ​​the EM radiation absorption layer 120 may be at least one of approximately 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0219] In some non-limiting examples, the particle structure 121 absorbs the EM signal 531 within at least a partial range of the visible light spectrum and / or UV spectrum, while at an angle to the layer of surface 501, the signal transmission region of surface 501 of the display panel 510. 520 The particle structure 121 may be configured to allow transmission of the EM signal 531 of the IR spectrum and / or NIR spectrum passing through. In some non-limiting examples, such a particle structure 121 may have (i) at least one coverage of about 10-50%, 10-45%, 12-40%, 15-40%, 15-35%, 18-35%, 20-35%, or 20-30%, (ii) the majority of the particle structure 121 may have at least one maximum feature size of at least about 40 nm, 35 nm, 30 nm, 25 nm, or 20 nm, and (iii) at least one mean and / or median feature size of about 5-40 nm, 5-30 nm, 8-30 nm, 10-30 nm, 8-25 nm, 10-25 nm, 8-20 nm, 10-15 nm, or 8-15 nm.

[0220] In some non-limiting examples, the resonance provided by at least one particle structure 121 to improve the transmission of EM signals 531 through the non-emitting region 1902 of surface 501 of the display panel 510 at a certain angle with respect to the layer of surface 501 can be tuned by a sensible choice of at least one of the characteristic size, size distribution, shape, surface coverage, composition, dispersion, and / or material of the particle structure 121.

[0221] In some non-limiting examples, resonance can be tuned by varying the deposition thickness of the deposited material 1231.

[0222] In some non-limiting examples, resonance occurs in the EM layer patterned coating 210 e This can be adjusted by changing the average film thickness.

[0223] In some non-limiting examples, resonance can be tuned by varying the thickness of at least one coating layer 710. In some non-limiting examples, the thickness of at least one coating layer 710 may range from 0 nm (corresponding to the absence of at least one coating layer 710) to a value exceeding the characteristics of the deposited particle structure 121.

[0224] In some non-limiting examples, resonance can be tuned by changing the dielectric constant of the deposited particle structure 121 by altering the composition of the metals in the deposited material 1231.

[0225] In some non-limiting examples, resonance can be tuned by doping the patterned material 1111 with organic materials having different compositions.

[0226] In some non-limiting examples, resonance can be tuned by selecting and / or modifying the patterned material 1111 to have a specific refractive index and / or specific extraction coefficient.

[0227] In some non-limiting examples, resonance can be tuned by selecting and / or modifying the material deposited as at least one coating layer 710 to have a specific refractive index and / or a specific damping coefficient. As a non-limiting example, typical organic CPL materials can have refractive indices in the range of about 1.7–2.0, whereas silicon, a material typically used as a TFE material, can have refractive indices in the range of about 1.7–2.0. x It can have a refractive index that can exceed approximately 2.4. In addition, SiON x It may have a high absorption coefficient that can influence the desired resonance characteristics.

[0228] Those skilled in the art will see that additional parameters and / or values ​​and / or ranges may affect the non-emitting region of surface 501 of the display panel 510 at a certain angle to the layer of surface 501. 1902It will be understood that it may be suitable to tune the resonance provided by the EM radiation absorption layer 120 in order to allow the transmission of the EM signal 531 passing through and / or to improve the absorption of EM radiation incident on the surface 501 of the display panel 510, which may, in a non-limiting example, be visible light.

[0229] Those skilled in the art will know that certain values ​​and / or ranges of these parameters may be suitable for tuning the resonance provided by the EM radiation absorbing layer 120 to improve the transmission of the EM signal 531 through the non-emitting region 1902 of surface 501 of the display panel 510 at a certain angle to the layer of surface 501, but other values ​​and / or ranges of such parameters may be suitable for purposes other than improving the transmission of the EM signal 531, including improving the performance, stability, reliability, and / or lifespan of surface 501, and in some non-limiting examples, a suitable second electrode within the emitting region 510 of the second portion 402 640 They will understand that this can be appropriate to ensure proper deposition and thereby facilitate the release of EM radiation.

[0230] In addition, those skilled in the art will understand that there may be additional parameters and / or values ​​and / or ranges that are suitable for such other purposes.

[0231] In some non-limiting examples, the exposed layer surface 11 of the surface 501 within the second portion 402 is incident (i.e., the exposed layer surface 11 of the surface 501 is the EM layer patterned coating 210 e The vapor flux 1232 of the deposited material 1231 (exceeding the side of the first portion 401) is applied to the EM layer patterned coating 210 e Even if they are not present, the rate and / or duration may be such that a closed coating 1040 of the deposited material 1231 cannot be formed on them. In such a scenario, the vapor flux 1232 of the deposited material 1231 on the exposed layer surface 11 within the side of the second portion 402 includes, but is not limited to, at least one particulate structure 121 including a discontinuous layer 130, as shown in Figure 7A. tIt is also possible to form something on top of it.

[0232] Figure 7B shows an exemplary version of user device 500. 700 b This is a simplified block diagram of its display panel. 700 b So, sedimentary materials 1231 When the vapor flux 1232 is incident on the exposed layer surface 11, the second electrode forms on the second portion 402 as on surface 501. 640 Rather than forming a closed coating 1040, at least one particle structure 121 t A discontinuous layer 130 containing the above may be formed in the second portion 402. At least one particle structure 121 t When electrically coupled, the discontinuous layer 130 is the second electrode 640 It can function as such.

[0233] In some non-limiting examples, particle structure 121 t The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of the EM radiation absorption layer 120 is the particle structure 121 d The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion may differ. In some non-limiting examples, the particle structure 121 t The characteristic size is due to the particle structure 121 of the EM radiation absorption layer 120. d It may be larger than the characteristic size. In some non-limiting examples, the surface coverage of particle structure 121t is the particle structure 121 of the EM radiation absorption layer 120. d It may be greater than the surface coverage. In some non-limiting examples, particle structure 121 t The deposition density is the particle structure 121 of the EM radiation absorption layer 120. d It can be greater than the sediment density.

[0234] In some non-limiting examples, particle structure 121 t The characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of the particle structure 121 tIt could be something that allows them to be electrically coupled.

[0235] In some non-limiting examples, the second electrode in the second part 402 640 At least one particle structure 121 of the discontinuous layer 130 that forms t The characteristic size is at least one particle structure 121 of the EM radiation absorption layer 120 within the first part 401. d It may exceed the characteristic size.

[0236] In some non-limiting examples, the second electrode of the second part 402 640 At least one particle structure 121 of the discontinuous layer 130 that forms t The surface coverage is determined by at least one particle structure 121 of the EM radiation absorption layer 120 of the first portion 401. d The surface coverage may exceed the specified limit.

[0237] In some non-limiting examples, the second electrode in the second part 402 640 The deposition density of the discontinuous layer 130 may be greater than the deposition density of the EM radiation absorption layer 120 in the first portion 401.

[0238] In some non-limiting examples, the second electrode 640 At least one particle structure 121 of the discontinuous layer 130 forming the transition region may partially extend over the EM layer patterned coating 210 within the transition region 705.

[0239] Figure 7C shows an exemplary version of user device 500. 700 c This is a simplified block diagram of the display panel 510. b So, display panel 510 b At least one TFT structure 701 for driving the emission region 610 within the second portion 402 on the side of the display panel 510 b The first electrode is located in the same place as the emission region 610 within the second portion 402 on the side. 620 This is the TFT insulating layer 709Extending through, at least one such TFT structure 701 It is electrically coupled to the terminals and / or ground of the power supply 1505 via at least one drive circuit incorporating it.

[0240] In contrast, display panel 510 c Therefore, within the second portion 402 of the side surface 501, there is no TFT structure 701 located in the same place as the emission region 610 that it drives. Thus, the display panel 510 c The first electrode 620 It does not penetrate the TFT insulating layer 709. Rather, the display panel 510 c At least one TFT structure 701 for driving the emission region 610 within the second portion 402 of the side of the display panel 510 is located elsewhere on its side (not shown), and the conductive channel 735 may be a TFT insulating layer 709 in some non-limiting examples. c Beyond its second portion 402 on the exposed layer surface 11, the display panel 510 c It may extend into the side surface. In some non-limiting examples, the conductive channel 735 is located in the display panel 510. c It can extend over at least a portion of the first portion 401 of the side surface. In some non-limiting examples, the conductive channel 735 may have an average thickness such that it maximizes the transmittance of the EM signal 531 passing through it at an angle to the layer of the surface 501 through which it passes. In some non-limiting examples, the conductive channel 735 may be formed from Cu and / or TCO.

[0241] EM layer patterned coating 210 e To analyze the characteristics of the EM radiation absorption layer 120 formed on the exposed layer surface 11, a series of samples were prepared after exposing such an exposed layer surface 11 to an Ag vapor flux 1232.

[0242] The sample is a silicon (Si) substrate with an EM layer patterned coating 210 eIt was fabricated by depositing organic material to provide it. Next, EM layer patterned coating 210 e The exposed layer surface 11 was exposed to Ag vapor flux 1232 until a reference thickness of 8 nm was reached. EM layer patterned coating 210 e After exposing the exposed layer surface 11 to vapor flux 1232, EM layer patterned coating 210 e The formation of a discontinuous layer 130 in the form of separate Ag particle structures 121 was observed on the exposed layer surface 11.

[0243] The characteristics of such discontinuous layer 130 are EM layer patterned coating 210 e The size of distinct Ag particle structures 121 deposited on the exposed layer surface 11 was measured by SEM and characterized. Specifically, the average diameter of each distinct particle structure 121 was measured for the EM layer patterning coating 210. e When the exposed layer surface 11 is viewed from above, the area occupied by each individual particle structure 121 was measured, and the area occupied by each individual particle structure 121 was fitted to a circle of the same area to calculate the average diameter. SEM images of the sample are shown in Figure 9A, and Figure 9C shows the distribution of the average diameter 910 obtained by this analysis. For comparison, a reference sample was prepared by directly depositing 8 nm Ag onto a Si substrate. SEM images of such a reference sample are shown in Figure 9B, and the analysis 920 of this micrograph is also reflected in Figure 9C.

[0244] As you can see, EM layer patterned coating 210 e The median size of the distinct Ag particle structures 121 on the exposed layer surface 11 was found to be approximately 13 nm, while the median particle size of the Ag film deposited on the Si substrate of the reference sample was found to be approximately 28 nm. EM layer patterned coating 210 covered by distinct Ag particle structures 121 of discontinuous layer 130 in the analyzed portion of the sample. e The area ratio of the exposed layer surface 11 in the reference sample was found to be approximately 22.5%, while the area ratio of the exposed layer surface 11 of the Si substrate covered with Ag particles in the reference sample was found to be approximately 48.5%.

[0245] In addition, EM layer patterned coating 210 on a glass substrate e A glass sample was prepared using substantially the same process by depositing a discontinuous layer 130 of Ag particle structure 121, and this sample (sample B) was analyzed to determine the effect of the discontinuous layer 130 on the transmittance through the sample. EM layer patterned coating 210 e Comparative glass samples were prepared by depositing a material onto a glass substrate (comparative sample A) and by directly depositing an 8nm thick Ag coating onto a glass substrate (comparative sample C). The transmittance of EM radiation, expressed as the ratio of the intensity of EM radiation detected when EM radiation passes through each sample, was measured at various wavelengths for each sample and summarized in Table 4 below.

[0246] [Table 4]

[0247] As can be seen, sample B showed a relatively low EM radiation transmittance of approximately 54% at a wavelength of 450 nm in the visible light spectrum, but a relatively high EM radiation transmittance of approximately 88% at a wavelength of 850 nm in the NIR spectrum, due to EM radiation absorption caused by the presence of the EM radiation absorption layer 120. Since comparative sample A showed a transmittance of approximately 90% at a wavelength of 850 nm, it can be understood that the presence of the EM radiation absorption layer 120 did not substantially attenuate the transmission of EM radiation, including the EM signal 531, at such wavelengths, although this is not limited to it. Comparative sample C showed a relatively low transmittance of 30-40% in the visible light spectrum compared to sample B, and a lower transmittance at a wavelength of 850 nm in the NIR spectrum.

[0248] For the purpose of the aforementioned analysis, approximately 10 nm on a 500 nm scale. 2 Below and approximately 2.5 nm on a 200 nm scale. 2 Small particle structures 121 that fall below the threshold area were ignored as the image resolution approached.

[0249] Covering layer In some non-limiting examples, at least one coating layer 710 may be provided in the form of at least one layer of an outcoupling and / or encapsulating coating for the display panel 510, including, but not limited to, an outcoupling layer, a CPL, a TFE layer, a polarizing layer, or other physical layers and / or coatings that may be deposited on the display panel 510 as part of a manufacturing process. In some non-limiting examples, at least one coating layer 710 may include lithium fluoride (LiF).

[0250] In some non-specific examples, CPL is a device 200 It can be deposited across the entire surface. The function of CPL is generally that of the device 200 This promotes the outcoupling of light emitted by and therefore the external quantum efficiency (EQE). It could potentially lead to improvement.

[0251] In some non-limiting examples, at least one coating layer 710 may be deposited at least partially over a transverse range of the surface 501, and in some non-limiting examples, at least one particle structure 121 of the EM radiation absorption layer 120 may be at least partially covered in the first portion 401, and the EM layer patterned coating 210 on the exposed layer surface 11 e It forms an interface with the second electrode in the second portion 402. In some non-limiting examples, at least one coating layer 710 also forms an interface with the second electrode in the second portion 402. 640 It can at least partially cover it.

[0252] In some non-limiting examples, at least one coating layer 710 may have a high refractive index. In some non-limiting examples, at least one coating layer 710 may be an EM layer patterned coating 210 e It may have a refractive index exceeding that of [the specified value].

[0253] In some non-limiting examples, the display panel 510 has an EM layer patterned coating 210 e At the interface with the exposed layer surface 11, voids and / or air interfaces may be provided, whether during manufacturing, after manufacturing, and / or during operation. Thus, in some non-limiting examples, such voids and / or air interfaces may be considered as at least one coating layer 710. In some non-limiting examples, the display panel 510 may have both CPL and voids, the EM radiation absorbing coating 120 may be covered by CPL, and the voids may be arranged on or covering the CPL.

[0254] In some non-limiting examples, at least one of the particle structures 121 of the deposited material 1231 within the EM radiation absorption layer 120 may be in physical contact with at least one coating layer 710. In some non-limiting examples, substantially all of the particle structures 121 of the deposited material 1231 within the EM radiation absorption layer 120 may be in physical contact with at least one coating layer 710.

[0255] Those skilled in the art will understand that there may be additional layers introduced at various stages of the manufacturing process that are not illustrated.

[0256] In some non-limiting examples, a thin dispersed EM radiation absorption layer 120 of the particle structure 121 within the first portion 401 includes a patterned material 1111 having a low refractive index. coating At the interface between 210 and at least one coating layer 710 including a CPL containing a material that may have a high refractive index, the signal transmission region of the surface 501 of the display panel 510 is at a certain angle with respect to the layer of surface 501. 520 The outcoupling of at least one EM signal 531 passing through can be enhanced.

[0257] Patterning Those skilled in the art will understand that further details of patterning the deposited material 1231 using the patterned coating 210 (whether or not for the purpose of forming the EM radiation absorption layer 120) are described herein.

[0258] In some non-limiting examples, in the first portion 401, a patterned coating 210 (which may be a NIC in some non-limiting examples) containing a patterned material 1111 (which may be a NIC material in some non-limiting examples) may be selectively deposited as a closed coating 1040 on the exposed layer surface 11 of the underlying layer (which may include, but is not limited to, the substrate 10) of the device 100, but only in the first portion 401. However, in the second portion 402, the underlying exposed layer surface 11 may substantially lack a closed coating 1040 of the patterned material 1111.

[0259] Patterned coating Figure 10 is a cross-sectional view of a multilayer semiconductor device 1000, where device 100 may be a version thereof in some non-limiting examples. The patterned coating 210 may include the patterned material 1111. In some non-limiting examples, the patterned coating 210 may include a closed coating 1040 of the patterned material 1111.

[0260] The patterned coating 210 can provide an exposed layer surface 11 with a relatively low initial adhesion probability to the deposition material 1231 (in some non-limiting examples, under the conditions specified in the dual QCM technique described by Walker et al.), which in some non-limiting examples can be substantially lower than the initial adhesion probability to the deposition material 1231 on the underlying exposed layer surface 11 of the device 100 to which the patterned coating 210 is deposited.

[0261] Due to the low initial adhesion probability of the patterned coating 210 and / or patterned material 1111 to the deposition of the deposited material 1231, in some non-limiting examples, when deposited as a film and / or a coating in some form, and under similar circumstances to the deposition of the patterned coating 210 within the device 1000, the first portion 401 including the patterned coating 210 may substantially lack a closed coating 1040 of the deposited material 1231.

[0262] In some non-limiting examples, when the patterned coating 210 and / or patterned material 1111 are deposited as films and / or coatings in some non-limiting examples, and under similar circumstances to the deposition of the patterned coating 210 within the device 1000, the initial adhesion probability for the deposition of the deposited material 1231 may be at least one of approximately 0.9, approximately 0.3, approximately 0.2, approximately 0.15, approximately 0.1, approximately 0.08, approximately 0.05, approximately 0.03, approximately 0.02, approximately 0.01, approximately 0.008, approximately 0.005, approximately 0.003, approximately 0.001, approximately 0.0008, approximately 0.0005, approximately 0.0003, or approximately 0.0001.

[0263] In some non-limiting examples, when the patterned coating 210 and / or patterned material 1111 are deposited as films and / or coatings in some non-limiting examples, and under similar circumstances to the deposition of the patterned coating 210 within device 1000, the initial deposition probabilities for silver (Ag) and / or magnesium (Mg) may be at least one of approximately 0.9, approximately 0.3, approximately 0.2, approximately 0.15, approximately 0.1, approximately 0.08, approximately 0.05, approximately 0.03, approximately 0.02, approximately 0.01, approximately 0.008, approximately 0.005, approximately 0.003, approximately 0.001, approximately 0.0008, approximately 0.0005, approximately 0.0003, or approximately 0.0001.

[0264] In some non-limiting examples, when the patterned coating 210 and / or patterned material 1111 are deposited as a film and / or a coating in some non-limiting examples, and under similar circumstances to the deposition of the patterned coating 210 within the device 1000, the deposition ratio of the deposited material 1231 is approximately 0.15 to 0.0001, approximately 0.1 to 0.0003. Approximately 0.08~0.0005, approximately 0.08~0.0008, approximately 0.05~0.001, approximately 0.03~0.0001, approximately 0.03~0.0003, approximately 0.03~0.0005, approximately 0.03~0.0008, approximately 0.03~0.001, approximately 0.03~0.005, approximately 0.03~0.008, approximately 0.03~0.01, approximately 0.02~0.0001, approximately 0.02~0.0003, approximately 0. 0.02~0.0005, approximately 0.02~0.0008, approximately 0.02~0.001, approximately 0.02~0.005, approximately 0.02~0.008, approximately 0.02~0.01, approximately 0.01~0.0001, approximately 0.01~0.0003, approximately 0.01~0.0005, approximately 0.01~0.0008, approximately 0.01~0.001, approximately 0.01~0.005, approximately 0.01~0.008, approximately 0.008~0 It may have at least one initial attachment probability among 0.0001, approximately 0.008-0.0003, approximately 0.008-0.0005, approximately 0.008-0.0008, approximately 0.008-0.001, approximately 0.008-0.005, approximately 0.005-0.0001, approximately 0.005-0.0003, approximately 0.005-0.0005, approximately 0.005-0.0008, or approximately 0.005-0.001.

[0265] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may have an initial adhesion probability below a threshold when deposited as a film and / or a coating in some non-limiting examples, and for the deposition of multiple deposition materials 1231 under similar circumstances to the deposition of the patterned coating 210 within device 1000. In some non-limiting examples, such a threshold may be at least one of about 0.3, about 0.2, about 0.18, about 0.15, about 0.13, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, or about 0.001.

[0266] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may, when deposited as a film and / or a coating in some non-limiting examples, and under similar circumstances to the deposition of the patterned coating 210 within the device 1000, have an initial adhesion probability below such a threshold for the deposition of multiple deposition materials 1231 selected from at least one of Ag, Mg, ytterbium (Yb), cadmium (Cd), and zinc (Zn). In some further non-limiting examples, the patterned coating 210 may exhibit an initial adhesion probability below such a threshold for the deposition of multiple deposition materials 1231 selected from at least one of Ag, Mg, and Yb.

[0267] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may, when deposited as a film and / or a coating in some non-limiting examples, and under similar circumstances to the deposition of the patterned coating 210 in device 1000, exhibit an initial adhesion probability for the deposition of a first deposition material 1231 below a first threshold and an initial adhesion probability for the deposition of a second deposition material 1231 below a second threshold. In some non-limiting examples, the first deposition material 1231 may be Ag and the second deposition material 1231 may be Mg. In some other non-limiting examples, the first deposition material 1231 may be Ag and the second deposition material 1231 may be Yb. In some other non-limiting examples, the first deposition material 1231 may be Yb and the second deposition material 1231 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0268] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may, in some non-limiting examples, have a transmittance to EM radiation of at least a threshold transmittance value when deposited as a film and / or a coating in some form, and after being exposed to a vapor flux 1232 (Figure 12) of a deposit material 1231 containing but not limited to Ag, under similar circumstances to the deposition of the patterned coating 210 in device 1000.

[0269] In some non-limiting examples, such transmittance may be measured after the exposed layer surface 11 of the patterned coating 210 and / or patterned material 1111, formed as a thin film, is exposed to a vapor flux 1232 of a deposit material 1231 containing but not limited to Ag, under typical conditions that may be used to deposit electrodes for optoelectronic devices, which may, in a non-limiting example, be the cathode of an organic light-emitting diode (OLED) device.

[0270] In some non-limiting examples, the conditions for the exposed layer surface 11 to receive a vapor flux 1232 of a deposited material 1231 containing but not limited to Ag may be as follows: (i) about 10- 4 Torr or 10 -5 (ii) the vacuum pressure of Torr, the vapor flux 1232 of the deposited material 1231 containing but not limited to Ag, substantially matches a reference deposition rate of about 1 angstrom (Å) / second, which can be monitored and / or measured using QCM as a non-limiting example, and (iii) the exposed layer surface 11 is exposed to the vapor flux 1232 of the deposited material 1231 containing but not limited to Ag until a reference average layer thickness of about 15 nm is reached, and once such a reference average layer thickness is reached, the exposed layer surface 11 is not exposed to the vapor flux 1232 of the deposited material 1231 containing but not limited to Ag.

[0271] In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1232 of the deposit material 1231 containing but not limited to Ag may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 receiving the vapor flux 1232 of the deposit material 1231 containing but not limited to Ag may be located about 65 cm away from the evaporation source that evaporates the deposit material 1231 containing but not limited to Ag.

[0272] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength within the visible light spectrum. For example, the threshold transmittance value may be measured at a wavelength of approximately 460 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength within the IR and / or NIR spectrum. For example, the threshold transmittance value may be measured at a wavelength of approximately 700 nm, 900 nm, or 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of the incident EM power that can penetrate the sample. In some non-limiting examples, the threshold transmittance value may be at least one of approximately 60%, 65%, 70%, 75%, 80%, 85%, or 90%.

[0273] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the patterned coating 210 and / or patterned material 1111 to the deposition of the deposited material 1231, and in some non-limiting examples, between the average layer thickness of the deposited material 1231 on it when deposited as a film and / or a form of coating, and under similar conditions to the deposition of the patterned coating 210 within the device 1000.

[0274] Those skilled in the art will understand that high transmittance may generally indicate the absence of a closed coating 1040 of the deposited material 1231, which may, in non-limiting examples, be Ag. On the other hand, since thin metal films can exhibit high absorption of EM radiation, especially when formed as a closed coating 1040, low transmittance may generally indicate the presence of a closed coating 1040 of the deposited material 1231, which may include but are not limited to Ag, Mg, and / or Yb.

[0275] It can be further assumed that an exposed layer surface 11 exhibiting a low initial adhesion probability to a deposited material 1231 containing but not limited to Ag, Mg, and / or Yb may exhibit high transmittance. On the other hand, an exposed layer surface 11 exhibiting a high adhesion probability to a deposited material 1231 containing but not limited to Ag, Mg, and / or Yb may exhibit low transmittance.

[0276] A series of samples were prepared to measure the transmittance of the example material and to visually observe whether a closed Ag coating 1040 had formed on the exposed layer surface 11 of such example material. Each sample was prepared by depositing a coating of the example material to a thickness of approximately 50 nm on a glass substrate, and then exposing the exposed layer surface 11 of the coating to an Ag vapor flux 1232 at a rate of approximately 1 Å / sec until a reference layer thickness of approximately 15 nm was reached. Next, each sample was visually analyzed and its transmittance was measured.

[0277] The molecular structures of the example materials used in the samples described herein are shown below.

[0278] [Table 5-1]

[0279] [Table 5-2]

[0280] [Table 5-3]

[0281] Samples on which a substantially closed Ag coating 1040 was formed were visually identified, and the presence of such coatings in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of approximately 50% or less at a wavelength of approximately 460 nm.

[0282] Samples lacking the closed Ag coating 1040 were also identified, and the absence of such coating in these samples was further confirmed by measuring the transmittance through them, which showed a transmittance of over 70% at a wavelength of approximately 460 nm.

[0283] The results are summarized below.

[0284] [Table 6]

[0285] Based on the above, it was found that the materials used in the first seven samples (HT211 to Example Material 2) in Tables 5 and 6 may not be very suitable for suppressing the deposition of the deposited material 1231 on them, including but not limited to Ag and / or Ag-containing materials.

[0286] On the other hand, it was found that Example Materials 3 to 9 may be suitable for acting as patterned coatings 210 to suppress the deposition of Ag and / or Ag-containing materials on a deposition material 1231 in at least some non-limiting applications.

[0287] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a coating in some non-limiting examples, may have a surface energy of at least one of the following: about 24 dynes / cm, about 22 dynes / cm, about 20 dynes / cm, about 18 dynes / cm, about 16 dynes / cm, about 15 dynes / cm, about 13 dynes / cm, about 12 dynes / cm, or about 11 dynes / cm, under conditions similar to the deposition of the patterned coating in device 1000.

[0288] In some non-limiting examples, the surface energy may be at least one of approximately 6 dynes / cm, approximately 7 dynes / cm, or approximately 8 dynes / cm.

[0289] In some non-limiting examples, the surface energy may be at least one of approximately 10–20 dynes / cm, or approximately 13–19 dynes / cm.

[0290] In some non-restrictive cases, the critical surface tension of a surface may be determined according to the Zisman method, which is described in detail in WAZisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0291] As a non-limiting example, a series of samples were prepared to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized below.

[0292] [Table 7]

[0293] Based on the aforementioned measurements of critical surface tension in Table 7 and previous observations regarding the presence or absence of a substantially closed Ag coating 1040, it was found that materials that form a low surface energy surface when deposited as a coating (which may, in non-limiting examples, have a critical surface tension of at least one of approximately 13–20 dynes / cm or 13–19 dynes / cm) may be suitable for forming a patterned coating 210 and inhibiting the deposition of a deposit material 1231 thereon (including, but not limited to, Ag and / or Ag-containing materials).

[0294] While we do not wish to be bound by any particular theory, as a non-limiting example, we may assume that materials forming surfaces with surface energies lower than approximately 13 dynes / cm may not be very suitable as patterned materials 1111 in certain applications, because such materials may exhibit relatively weak adhesion to surrounding layers, have low melting points, and / or low sublimation temperatures.

[0295] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may have a low refractive index when deposited as a film and / or a coating in some non-limiting example, under similar circumstances to the deposition of the patterned coating 210 within the device 1000.

[0296] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a coating in some non-limiting examples, may have a refractive index of at least one of approximately 1.55, approximately 1.5, approximately 1.45, approximately 1.43, approximately 1.4, approximately 1.39, approximately 1.37, approximately 1.35, approximately 1.32, or approximately 1.3 for EM radiation with a wavelength of approximately 550 nm, under similar circumstances to the deposition of the patterned coating 210 in device 1000.

[0297] While we do not wish to be bound by any particular theory, it has been observed that providing a patterned coating 210 having a low refractive index can improve the transmission of external EM radiation through its second portion 402 in at least some devices 100. As a non-limiting example, a device 1000 that includes an air gap within which the patterned coating 210 may be arranged near or adjacent to it may exhibit higher transmittance than a similarly configured device in which such a low refractive index patterned coating 210 is not provided, when the patterned coating 210 has a low refractive index.

[0298] As a non-limiting example, a series of samples were prepared, and the refractive index at a wavelength of 550 nm was measured for coatings formed from several of the various example materials. The measurement results are summarized below.

[0299] [Table 8]

[0300] Based on the aforementioned measurements of refractive indices in Table 8 and previous observations regarding the presence or absence of the substantially closed Ag coating 1040 in Table 6, it has been found that, as a non-limiting example, materials forming a low refractive index coating, which may have a refractive index of at least one of about 1.4 or 1.38, may be suitable for forming a patterned coating 210 to suppress the deposition of the deposited material 1231 thereon, including, but not limited to, Ag and / or Ag-containing materials.

[0301] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a coating in some non-limiting examples, may have an extinction coefficient that may be less than or equal to about 0.01 for photons of wavelengths at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm, under similar circumstances to the deposition of the patterned coating 210 in device 1000.

[0302] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a coating in some non-limiting examples, may not substantially attenuate passing EM radiation, at least in the visible light spectrum, under similar circumstances to the deposition of the patterned coating 210 within the device 1000.

[0303] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a coating in some form, may not substantially attenuate passing EM radiation, at least in the IR spectrum and / or NIR spectrum, under conditions similar to those of the deposition of the patterned coating 210 within the device 1000.

[0304] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111, when deposited as a film and / or a form of coating, may have an extinction coefficient that is at least one of at least about 0.05, about 0.1, about 0.2, or about 0.5 for EM radiation with wavelengths shorter than at least one of at least 400 nm, about 390 nm, about 380 nm, or about 370 nm, under similar circumstances to the deposition of the patterned coating 210 within the device 1000. Thus, when deposited as a film and / or a form of coating, the patterned coating 210 and / or patterned material 1111 can absorb EM radiation in the UVA spectrum incident on the device 1000 under similar circumstances to the deposition of the patterned coating 210 within the device 1000, thereby reducing the possibility that EM radiation in the UVA spectrum may have undesirable effects on device performance, device stability, device reliability, and / or device lifetime.

[0305] In some non-limiting examples, the patterned coating 210 and / or patterned material 1111 may have a glass transition temperature of at least one of about 300°C, about 150°C, about 130°C, about 30°C, about 0°C, about -30°C, or about -50°C when deposited as a film and / or a coating in some non-limiting examples, under similar circumstances to the deposition of the patterned coating 210 in device 1000.

[0306] In some non-limiting examples, the patterned material 1111 may have at least one sublimation temperature among about 100–320°C, about 120–300°C, about 140–280°C, or about 150–250°C. In some non-limiting examples, such sublimation temperatures may allow the patterned material 1111 to be readily deposited as a coating using PVD.

[0307] The sublimation temperature of a material can be determined by various methods apparent to those skilled in the art, including, but not limited to, heating the material in a crucible under high vacuum and determining the temperature that can be achieved as follows: • Observe the initiation of material deposition onto the surface of the QCM attached at a certain distance from the crucible. • Observe a specific deposition rate on the surface of the QCM attached at a certain distance from the crucible, as an unrestricted example, 0.1 Å / sec, and / or As a non-limiting example, about 10 -4 Or about 10 -5 The material reaches its threshold vapor pressure.

[0308] In some non-limiting examples, the sublimation temperature of the material is approximately 10°C. -4 The temperature at which the material in the evaporation source can be evaporated may be determined by heating the material in a high vacuum environment of Torr, and thus, as a non-limiting example, by generating a vapor flux sufficient to cause the material to deposit on a surface on a QCM mounted at a fixed distance from the evaporation source, at a deposition rate of about 0.1 Å / sec.

[0309] In some non-limiting examples, the QCM may be mounted approximately 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0310] In some non-limiting examples, the patterned coating 210 and / or the patterned material 1111 may contain fluorine (F) atoms and / or silicon (Si) atoms. In some non-limiting examples, the patterned material 1111 for forming the patterned coating 210 may be a compound containing F and / or Si.

[0311] In some non-limiting examples, the patterned material 1111 may contain compounds containing F. In some non-limiting examples, the patterned material 1111 may contain compounds containing F and carbon (C) atoms. In some non-limiting examples, the patterned material 1111 may contain compounds containing F and C in an atomic ratio corresponding to at least one of the F / C quotients of at least about 1, 1.5, or 2. In some non-limiting examples, the atomic ratio of F to C counts all F atoms present in the compound structure, and for C atoms, counts sp atoms present in the compound structure. 3 This can be determined by counting only the hybridized carbon atoms. In some non-limiting examples, the patterned material 1111 may include compounds that, as part of their molecular substructure, contain a portion with F and C in atomic ratios corresponding to at least about 1, 1.5, or 2 F / C quotients.

[0312] In some non-limiting examples, the compounds of patterned material 1111 may include organic-inorganic hybrid materials.

[0313] In some non-limiting examples, the patterned material 1111 may be or may contain an oligomer.

[0314] In some non-limiting examples, the patterned material 1111 may be a compound having a molecular structure containing a skeleton and at least one functional group bonded to the skeleton, or may contain such a compound. In some non-limiting examples, the skeleton may be an inorganic part, and at least one functional group may be an organic part.

[0315] In some non-limiting examples, such compounds may have a molecular structure containing a siloxane group. In some non-limiting examples, the siloxane group may be linear, branched, or cyclic siloxane groups. In some non-limiting examples, the skeleton may be a siloxane group or may contain a siloxane group. In some non-limiting examples, the skeleton may be a siloxane group and at least one functional group containing F, or may contain them. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. A non-limiting example of such a compound is fluorosiloxane. Examples of such a compound are Example Material 6 and Example Material 9.

[0316] In some non-limiting examples, the compound may have a molecular structure containing a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be POSS. In some non-limiting examples, the skeleton may be a silsesquioxane group or may contain a silsesquioxane group. In some non-limiting examples, the skeleton may be a silsesquioxane group and at least one functional group containing F, or may contain them. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosilsesquioxane and / or fluoro-POSS. An non-limiting example of such a compound is Example Material 8.

[0317] In some non-limiting examples, the compound may have a molecular structure comprising substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (which may be O, N, and / or S in some non-limiting examples) to derive a heteroaryl group. In some non-limiting examples, the skeleton may be substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups, or may contain them. In some non-limiting examples, the skeleton may be substituted or unsubstituted aryl groups and / or substituted or unsubstituted heteroaryl groups, and at least one functional group containing F, or may contain them. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0318] In some non-limiting examples, the compound may have a molecular structure comprising substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be substituted by heteroatoms, which may be O, N, and / or S, in non-limiting examples.

[0319] In some non-limiting examples, the compound may have a molecular structure containing a phosphazene group. In some non-limiting examples, the phosphazene group may be linear, branched, or cyclic phosphazene groups. In some non-limiting examples, the skeleton may be a phosphazene group or may contain a phosphazene group. In some non-limiting examples, the skeleton may be a phosphazene group and at least one functional group containing F, or may contain them. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. An example of such a compound is fluorophosphazene. An example of such a compound is Example Material 4.

[0320] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer containing F. Non-limiting examples of fluoropolymers and / or fluorooligomers are those having the molecular structures of Example Material 3, Example Material 5, and / or Example Material 7.

[0321] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain fluorine (F). In some non-limiting examples, the organometallic complex may contain at least one ligand containing fluorine. In some non-limiting examples, the at least one ligand containing fluorine may be a fluoroalkyl group or may contain a fluoroalkyl group.

[0322] In some non-limiting examples, the patterned material 1111 may be an organic-inorganic hybrid material, or may include an organic-inorganic hybrid material.

[0323] In some non-limiting examples, the patterned material 1111 may include multiple different materials.

[0324] In some non-limiting examples, the molecular weight of the compound of patterned material 1111 may be at least one of approximately 5,000 g / mol, approximately 4,500 g / mol, approximately 4,000 g / mol, approximately 3,800 g / mol, or approximately 3,500 g / mol.

[0325] In some non-limiting examples, the molecular weight of the compound of the patterned material 1111 may be at least one of about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, or about 2,500 g / mol.

[0326] While we do not wish to be bound by any particular theory, for compounds adapted to form surfaces with relatively low surface energies, it can be assumed that, at least in some applications, there may be a target molecular weight of such compounds being at least one of approximately 1,500–5,000 g / mol, approximately 1,500–4,500 g / mol, approximately 1,700–4,500 g / mol, approximately 2,000–4,000 g / mol, approximately 2,200–4,000 g / mol, or approximately 2,500–3,800 g / mol.

[0327] While we do not wish to be bound by any particular theory, it can be assumed that such compounds may exhibit at least one property that makes them suitable for forming coatings and / or layers having a substantially amorphous structure when deposited using a vacuum-based thermal deposition process: (i) a relatively high melting point of at least 100°C as an unrestricted example, (ii) a relatively low surface energy, and / or (iii) a substantially amorphous structure when deposited using a vacuum-based thermal deposition process.

[0328] In some non-limiting examples, the proportion of the molar weight of such a compound that may be due to the presence of the F atom may be at least one of approximately 40–90%, approximately 45–85%, approximately 50–80%, approximately 55–75%, or approximately 60–75%. In some non-limiting examples, the F atom may constitute the majority of the molar weight of such a compound.

[0329] In some non-limiting examples, the patterned coating 210 may be arranged in a pattern that can be defined by at least one region within it, which may substantially lack a closed coating 1040 of the patterned coating 210. In some non-limiting examples, at least one region may separate the patterned coating 210 into a plurality of distinct fragments. In some non-limiting examples, the plurality of distinct fragments of the patterned coating 210 may be physically separated from each other on their sides. In some non-limiting examples, the plurality of distinct fragments of the patterned coating 210 may be arranged in a regular structure including, but not limited to, an array or matrix, such that in some non-limiting examples the distinct fragments of the patterned coating 210 may consist of a repeating pattern.

[0330] In some non-limiting examples, at least one of several distinct fragments of the patterned coating 210 may each correspond to an emission region 610.

[0331] In some non-limiting examples, the aperture ratio of the emission region 610 may be at least one of approximately 50%, approximately 40%, approximately 30%, or approximately 20%.

[0332] In some non-limiting examples, the patterned coating 210 may be formed as a single monolithic coating.

[0333] In some non-limiting examples, the patterned coating 210 may have and / or provide at least one nucleation site for the deposited material 1231 for the patterned material 1111 and / or the deposition environment used.

[0334] In some non-limiting examples, the patterned coating 210 may be doped, covered, and / or supplemented with another material that may act as a seed or heterogeneity to act as such nucleating sites for the deposited material 1231. In some non-limiting examples, such other material may include NPC 1420 material. In some non-limiting examples, such other material may include, but is not limited to, organic materials such as polycyclic aromatic compounds and / or materials containing nonmetallic elements such as at least one of O, S, N, or C, whose presence may otherwise be contaminants in the source material, equipment used for deposition, and / or vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a single layer to avoid the formation of its closed coating 1040. Rather, monomers of such other material may tend to be separated to the sides to form separate nucleating sites for the deposited material.

[0335] In some non-limiting examples, the patterned coating 210 may act as an optical coating. In some non-limiting examples, the patterned coating 210 can modify at least one property and / or characteristic of EM radiation (including, but not limited to, in the form of photons) emitted by the device 1000. In some non-limiting examples, the patterned coating 210 may exhibit some degree of haze and scatter the emitted EM radiation. In some non-limiting examples, the patterned coating 210 may include a crystalline material for scattering EM radiation that has passed through it. Such scattering of EM radiation may facilitate the enhancement of outcoupling of EM radiation from the device in some non-limiting examples. In some non-limiting examples, the patterned coating 210 may first be deposited as a substantially amorphous coating, including, but not limited to, a substantially amorphous coating, and after deposition, the patterned coating 210 may crystallize and then function as an optical coupler.

[0336] Materials suitable for use when providing NICs generally have low surface energy when deposited as a thin film or coating on a surface. Generally, materials with low surface energy may exhibit low intermolecular forces. Generally, materials with low intermolecular forces may exhibit low melting points. Generally, materials with low melting points may not be suitable for use in some applications requiring high-temperature reliability up to 60°C, 85°C, or 100°C, due to changes in the coating or the physical properties of the material at operating temperatures close to its melting point, as an example of non-limiting examples. As an example of non-limiting examples, a material with a melting point of 120°C may not be suitable for applications requiring high-temperature reliability up to 100°C. Therefore, in some applications requiring high-temperature reliability, materials with higher melting points may be desirable. While we do not wish to be bound by any particular theory, it is assumed here that materials with relatively high surface energy may be useful in some applications where high-temperature reliability may be desired.

[0337] Generally, materials with low intermolecular forces may exhibit low sublimation temperatures. In at least some applications, a low sublimation temperature of a material may be undesirable, as it may not be suitable for certain manufacturing processes that require a high degree of control over the thickness of the deposited film. As a non-limiting example, for materials with sublimation temperatures of approximately 140°C, 120°C, 110°C, 100°C, or below 90°C, controlling the deposition rate and thickness of films deposited using vacuum thermal deposition or other methods in the art may be difficult. Therefore, materials with higher sublimation temperatures may be useful in at least some applications where a high degree of control over film thickness is desired. While we do not wish to be bound by any particular theory, it is assumed here that materials with relatively high surface energy may be useful in at least some applications where a high degree of control over film thickness is desired.

[0338] Generally, materials with low surface energy may, as a non-limiting example, exhibit a large or wide optical gap that corresponds to the material's HOMO-LUMO gap. At least some materials with a large or wide optical gap and / or HOMO-LUMO gap may exhibit relatively weak photoluminescence or no photoluminescence at all in the visible, dark blue and / or near-UV wavelength range of the electromagnetic spectrum. As a non-limiting example, such materials may exhibit weak or no photoluminescence when exposed to radiation having a wavelength of about 365 nm, which is a common wavelength for radiation sources used in fluorescence microscopy. The presence of such materials can be difficult to detect using standard optical detection techniques such as fluorescence microscopy, especially when deposited, for example, as thin films, because the material may exhibit weak or no photoluminescence. This can be particularly problematic in applications where the material is selectively deposited on a portion of a substrate, for example, through a fine metal mask, as it may be desirable to determine the portion where such material is present following the deposition of the material. Therefore, materials with a relatively small HOMO-LUMO gap may be useful in applications where the detection of material films using optical techniques is desired. Similarly, materials with higher surface energy may be desirable for such applications involving the detection of material films using optical techniques.

[0339] In at least some applications, patterning of deposited material exposed to vapor flux coating Furthermore, patterning to induce the formation of a discontinuous coating containing a particle structure. coating It may also be desirable to provide a substantially closed coating of the deposited material, patterned. In at least some applications, a patterned coating of the deposited material is desirable. coating A discontinuous coating is formed on a second portion that is not coated by the patterning, while containing a particle structure having at least one characteristic. coating Patterned so as to be formed in the first part above coatingIt may also be desirable that the initial adhesion probability be sufficiently low. In at least some applications, it may be desirable to form a discontinuous film or particulate structure of the deposited material in a second portion, which may be a metal or a metal alloy, in non-limiting examples, while depositing a substantially closed thin film coating of the deposited material, for example, having a thickness of about 100 nm, 50 nm, 25 nm, or less than 15 nm. In some non-limiting examples, the relative amount of the deposited material deposited as a discontinuous film or particulate structure in the first portion may correspond to about 1% to 50%, 2% to 25%, 5% to 20%, or 7% to 10% of the amount of the deposited material deposited as a substantially closed coating in the second portion, which may correspond to thicknesses of about 100 nm, 75 nm, 50 nm, 25 nm, or less than 15 nm, in non-limiting examples.

[0340] While we do not wish to be bound by any particular theory, we are considering patterns containing materials that exhibit relatively high surface energy when deposited as thin films. coating The inventors have found that this may be useful in at least several applications where the formation of a discontinuous film or particulate structure of the deposited material in the first portion and a substantially closed coating of the deposited material in the second portion is desired, particularly when the thickness of the substantially closed coating is less than approximately 100 nm, 75 nm, 50 nm, 25 nm, or 15 nm, as non-limiting examples.

[0341] In some non-limiting examples, the patterned coating 210 and / or the patterned coating comprises at least two materials. In some non-limiting examples, the patterned coating 210 comprises a first material and a second material.

[0342] In some non-limiting examples, at least one of the patterned coating 210 and / or the material of the patterned coating, when deposited as a thin film, forms a NIC.

[0343] In some non-limiting examples, at least one of the materials of the patterned coating 210 forms a NIC when deposited as a thin film, and another material of the patterned coating 210 forms an NPC when deposited as a thin film. In some non-limiting examples, the first material forms an NPC when deposited as a thin film, and the second material forms a NIC when deposited as a thin film. In some non-limiting examples, the presence of the first material in the patterned coating 210 may result in an increased initial adhesion probability of the patterned coating 210 compared to the case where the patterned coating 210 is formed from the second material without substantial presence of the first material.

[0344] In some non-limiting examples, at least one of the materials of the patterned coating 210 is adapted to form a surface having a low surface energy when deposited as a thin film. In some non-limiting examples, the first material is adapted to form a surface having a lower surface energy when deposited as a thin film than the surface provided by the thin film made of the second material.

[0345] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence. vinegar. This may be achieved, for example, by including a photoluminescent material within the patterned coating 210.

[0346] In some non-limiting examples, the patterned coating 210 exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to UV, including but not limited to UVA, corresponding to wavelengths of approximately 315 nm to approximately 400 nm, and UVB, corresponding to wavelengths of approximately 280 nm to approximately 315 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which may correspond to wavelengths of approximately 380 nm to approximately 740 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to deep blue or near-UV.

[0347] In some non-limiting examples, the first material has a first optical gap, and the second material has a second optical gap, the second optical gap being larger than the first optical gap. In some non-limiting examples, the difference between the first and second optical gaps is greater than about 0.3 eV, greater than about 0.5 eV, greater than about 0.7 eV, greater than about 1 eV, greater than about 1.3 eV, greater than about 1.5 eV, greater than about 1.7 eV, greater than about 2 eV, greater than about 2.5 eV, and / or greater than about 3 eV.

[0348] In some non-limiting cases, the first optical gap is less than approximately 4.1 eV, less than approximately 3.5 eV, or less than approximately 3.4 eV. In some non-limiting cases, the second optical gap is greater than approximately 3.4 eV, greater than approximately 3.5 eV, greater than approximately 4.1 eV, greater than approximately 5 eV, or greater than approximately 6.2 eV.

[0349] In some non-restrictive examples, the first optical gap and / or the second optical gap correspond to the HOMO-LUMO gap.

[0350] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the UV and / or visible portions of the electromagnetic spectrum. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to UV, including but not limited to UVA, which corresponds to wavelengths of approximately 315 nm to approximately 400 nm, and UVB, which corresponds to wavelengths of approximately 280 nm to approximately 315 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to the visible portion of the electromagnetic spectrum, which may correspond to wavelengths of approximately 380 nm to approximately 740 nm. In some non-limiting examples, photoluminescence may be at wavelengths corresponding to deep blue.

[0351] In some non-limiting examples, the first material exhibits photoluminescence at wavelengths corresponding to the visible portion of the electromagnetic spectrum, while the second material exhibits substantially no photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum.

[0352] In some non-limiting examples, at least one of the materials of the patterned coating 210 exhibits photoluminescence, and at least one of the materials comprises a conjugated bond, an aryl moiety, a donor-acceptor group, and / or a heavy metal complex.

[0353] As a non-limiting example, the photoluminescence of a coating and / or material may be observed through a photoexcitation process. In a photoexcitation process, the coating and / or material is exposed to radiation emitted by a light source, such as a UV lamp. When the radiation emitted by the light source is absorbed by the coating and / or material, electrons within the coating and / or material are transiently excited. Following the excitation, one or more relaxation processes may occur, including but not limited to fluorescence and phosphorescence, which cause light to be emitted from the coating and / or material. The light emitted from the coating and / or material during such a process can be detected, for example, by a photodetector to characterize the photoluminescent properties of the coating and / or material. As used herein, the wavelength of photoluminescence with respect to a coating and / or material generally refers to the wavelength of light emitted by such coating and / or material as a result of the relaxation of electrons from an excited state. As will be understood by those skilled in the art, the wavelength of light emitted by a coating and / or material as a result of a photoexcitation process is generally longer than the wavelength of the radiation used to initiate the photoexcitation. Photoluminescence can be detected and / or characterized using various techniques known in the art, including but not limited to fluorescence microscopy. As used herein, a photoluminescent coating or material is a coating or material that exhibits photoluminescence at a certain wavelength when irradiated with excitation radiation of a particular wavelength. In some non-limiting examples, a photoluminescent coating or material may exhibit photoluminescence at wavelengths greater than approximately 365 nm when irradiated with excitation radiation having a wavelength of 365 nm. Photoluminescent coatings can be detected on a substrate using standard optical techniques, such as fluorescence microscopy, which are useful for quantifying, measuring, or inspecting the presence of such coatings or materials.

[0354] In some non-limiting examples, the optical gaps of various coatings and / or materials, including a first optical gap and / or a second optical gap, may correspond to the energy gap of the coating and / or material, through which photons are absorbed or emitted during the photoexcitation process.

[0355] In some non-limiting examples, photoluminescence is detected and / or characterized by exposing a coating and / or material to radiation having wavelengths corresponding to the UV portion of the electromagnetic spectrum, such as UVA or UVB. In some non-limiting examples, the radiation to induce photoexcitation has a wavelength of approximately 365 nm.

[0356] In some non-limiting examples, the second material exhibits substantially no photoluminescence at any wavelength corresponding to the visible portion of the electromagnetic spectrum. In some non-limiting examples, the second material exhibits no photoluminescence when exposed to radiation having wavelengths of approximately 300 nm, 320 nm, 350 nm, and / or 365 nm, or longer wavelengths. In non-limiting examples, the second material may exhibit a small amount of absorption and / or no detectable amount of absorption when exposed to such radiation. In some non-limiting examples, the second optical gap of the second material may be wider than the photon energy of the radiation emitted by the light source, and as a result, the second material does not undergo photoexcitation when exposed to such radiation. However, a patterned coating 210 containing such a second material may nevertheless exhibit photoluminescence when exposed to such radiation, due to the photoluminescence of the first material. Thus, for example, the presence of the patterned coating 210 may be easily detected and / or observed using routine characterization techniques such as fluorescence microscopy, depending on the deposition of the patterned coating 210.

[0357] In some non-limiting examples, the concentration (e.g., by weight) of the first material in the patterned coating 210 is less than the concentration of the second material in the patterned coating 210. In some non-limiting examples, the patterned coating 210 may contain about 0.1% or more by weight, 0.2% or more by weight, 0.5% or more by weight, 0.8% or more by weight, 1% or more by weight, 3% or more by weight, 5% or more by weight, 8% or more by weight, 10% or more by weight, 15% or more by weight, or 20% or more by weight of the first material. In some non-limiting examples, the patterned coating 210 may contain about 50% or less by weight, about 40% or less by weight, about 30% or less by weight, about 25% or less by weight, about 20% or less by weight, about 15% or less by weight, about 10% or less by weight, about 8% or less by weight, about 5% or less by weight, about 3% or less by weight, or about 1% or less by weight of the first material. In some non-limiting examples, the remainder of the patterned coating 210 may be substantially composed of a second material. In some non-limiting examples, the patterned coating 210 may include additional materials such as a third material and / or a fourth material.

[0358] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains at least one of fluorine (F) atoms and silicon (Si) atoms. In some non-limiting examples, at least one of the first material and the second material contains at least one of F and Si. In some further non-limiting examples, the first material contains F and / or Si, and the second material contains F and / or Si. In some non-limiting examples, both the first material and the second material contain F. In some non-limiting examples, both the first material and the second material contain Si. In some non-limiting examples, each of the first material and the second material contains F and / or Si.

[0359] In some non-limiting examples, at least one of the first and second materials contains both F and Si. In some non-limiting examples, one of the first and second materials does not contain F and / or Si. In some non-limiting examples, the second material contains F and / or Si, and the first material does not contain F and / or Si.

[0360] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains F, and at least one of the other materials of the patterned coating 210 contains sp 2 It contains carbon. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains F, and at least one of the other materials of the patterned coating 210 contains sp 3 It contains carbon. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is F and sp 3 It contains carbon, and at least one of the other materials of the patterned coating 210 is sp 2 It contains carbon. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210 may be a first material and / or a second material, and F and sp 3 All F atoms that contain carbon and are bonded to carbon (C) are sp 3 Bonded to carbon, at least one of the other materials of the patterned coating 210 is sp 2 It contains carbon. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is F and sp 3 All F atoms containing carbon and bonded to C are sp 3 Bonded to carbon, at least one of the other materials of the patterned coating 210 is sp 2It contains carbon and does not contain F. As an unrestricted example, in any of the unrestricted examples described above, “at least one of the materials of the patterned coating 210” may correspond to a second material, and “at least one of the other materials of the patterned coating 210” may correspond to a first material.

[0361] As will be understood by those skilled in the art, F, sp 2 carbon, sp 3 The presence of materials in a coating that include carbon, aromatic hydrocarbon moieties, and / or other functional groups or moieties can be detected using various methods known in the art, including, but not limited to, X-ray photoelectron spectroscopy (XPS).

[0362] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the materials of the patterned coating 210 does not contain an aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, does not contain an aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains F and does not contain an aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains an aromatic hydrocarbon moiety and does not contain F. Non-limiting examples of aromatic hydrocarbon moieties include substituted polycyclic aromatic hydrocarbon moieties, unsubstituted polycyclic aromatic hydrocarbon moieties, substituted phenyl moieties, and unsubstituted phenyl moieties.

[0363] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the materials of the patterned coating 210 does not contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for instance, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains F and does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety and does not contain F.

[0364] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, and at least one of the materials of the patterned coating 210 does not contain a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, but does not contain a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 210 contains a polycyclic aromatic hydrocarbon moiety, but does not contain a carbon fluoride moiety or a siloxane moiety.

[0365] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F, and at least one of the materials of the patterned coating 210 does not contain a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F and does not contain a phenyl moiety, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, contains F and does not contain a phenyl moiety, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety and does not contain F.

[0366] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, and at least one of the materials of the patterned coating 210 does not contain a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, does not contain a phenyl moiety, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of a carbon fluoride moiety and a siloxane moiety, but does not contain a phenyl moiety, and at least one of the other materials of the patterned coating 210 contains a phenyl moiety, but does not contain a carbon fluoride moiety or a siloxane moiety.

[0367] Generally, the molecular structures and / or molecular compositions of the patterned coating 210 materials, which may be, for example, the first material and the second material, are different from each other. In some non-limiting examples, the materials may be selected to have at least one property that is substantially similar or different from each other. Non-limiting examples of such traits and / or properties include (1) the molecular structure, monomer backbone, and / or functional groups of the monomers, (2) the presence of common elements, (3) similarity of molecular structures, (4) characteristic surface energy, (5) refractive index, (6) molecular weight, and / or (7) thermal properties, including but not limited to melting temperature, sublimation temperature, glass transition temperature, and / or thermal decomposition temperature.

[0368] Characteristic surface energy, when used herein in relation to materials, generally refers to the surface energy determined from such materials. For example, characteristic surface energy may be measured from a surface formed by a material deposited and / or coated in thin film form. Various methods and theories are known for determining the surface energy of solids. For example, surface energy can be calculated or derived based on a series of contact angle measurements, in which various liquids are brought into contact with a solid surface and the contact angle between the liquid-vapor interface and the surface is measured. In some non-limiting examples, the surface energy of a solid surface is equal to the surface tension of the liquid that has the highest surface tension to completely wet the surface. For example, a Zisman plot can be used to determine the highest surface tension value that results in complete wetting of the surface (i.e., a contact angle of 0°).

[0369] The sublimation temperature of a material can be determined using various methods known in the art. In a non-limiting example, the sublimation temperature may be determined by heating the material in a crucible under high vacuum and determining the temperature required to observe the start of deposition of the material on a quartz microbalance mounted at a fixed distance from the source. In some non-limiting examples, the quartz oscillator microbalance may be mounted about 65 cm away from the source for the purpose of determining the sublimation temperature. In some non-limiting examples, the sublimation temperature may be determined by heating the material in a crucible under high vacuum and measuring the temperature required to observe a specific deposition rate of 0.1 Å / sec on a quartz microbalance mounted at a fixed distance of about 65 cm from the crucible. In some non-limiting examples, the sublimation temperature may be determined by heating the material in a crucible under high vacuum and determining the temperature required to reach the threshold vapor pressure of the material. In a non-limiting example, the threshold vapor pressure is about 10E -4 Torr or 10E -5 It may also be Torr. In some non-limiting examples, the sublimation temperature of the material is about 10°E. -4The deposition rate can be determined by heating the material in an evaporation source under a high vacuum environment in Torr, measuring the temperature required to evaporate the material, and thus generating a vapor flux sufficient to deposit the material at a rate of approximately 0.1 angstroms / second onto a surface positioned approximately 65 cm away from the evaporation source. As a non-limiting example, the deposition rate can be measured using a quartz microbalance positioned approximately 65 cm away from the evaporation source.

[0370] While several non-limiting examples have been described herein with reference to the first and second materials, the patterned coating may further include one, two, three, or more additional materials, and it should be understood that the descriptions of the molecular structure and / or properties of the first material, the second material, the first oligomer, and / or the second oligomer may be applicable to any additional materials that may be contained within the patterned coating.

[0371] In some non-limiting examples, at least one of the first and second materials of the patterned coating 210 is an oligomer. As used herein, an oligomer generally refers to a material comprising at least two monomer units or monomers. As will be understood by those skilled in the art, an oligomer may differ from a polymer in at least one embodiment, including but not limited to (1) the number of monomer units contained therein, (2) molecular weight, and (3) other material properties and / or characteristics. Further descriptions of polymers and oligomers, as non-limiting examples, can be found in Naka K. (2014) Monomers, Oligomeres, Polymers, and Macromolecules (Overview). and Kobayashi S., Mullen K. (eds) Encyclopedia of Polymeric Nanomaterials. Springer, Berlin, Heidelberg.

[0372] Oligomers or polymers generally contain monomer units that are chemically bonded together to form molecules. Such monomer units may be substantially identical to one another, such that the molecule is primarily formed by the repetition of monomer units, or the molecule may contain two or more different monomer units. In addition, the molecule may contain one or more terminal units that may differ from the monomer units of the molecule. Oligomers or polymers may be linear, branched, cyclic, cyclic-linear, and / or crosslinked. Oligomers or polymers may contain two or more different monomer units arranged in a repeating pattern and / or in alternating blocks of different monomer units.

[0373] In some non-limiting examples, at least one of the first material and the second material is an oligomer. In some further non-limiting examples, the first material contains a first oligomer and the second material contains a second oligomer. Each of the first and second oligomers contains at least two monomers.

[0374] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (Mon) n Equation (I) In the formula, Mon represents a monomer, and n is an integer greater than or equal to 2.

[0375] In some non-restrictive examples, n is an integer between 2 and 100, 2 and 50, 3 and 20, 3 and 15, 3 and 10, or 3 and 7.

[0376] In some non-limiting examples, the molecular structures of the first and second materials of the patterned coating 210 are each independently represented by formula (I). In some non-limiting examples, the monomer and / or n of the first material may be different from that of the second material. In some non-limiting examples, n of the first material is the same as n of the second material. In some non-limiting examples, n of the first material is different from n of the second material. In some non-limiting examples, the first and second materials are oligomers.

[0377] In some non-limiting examples, the monomer contains at least one of fluorine and silicon.

[0378] In some non-limiting examples, the monomer contains a functional group. In some non-limiting examples, at least one functional group of the monomer has low surface tension. In some non-limiting examples, at least one functional group of the monomer contains at least one of fluorine and silicon. Non-limiting examples of such functional groups include fluorocarbon groups and siloxane groups. In some non-limiting examples, the monomer contains a silsesquioxane group.

[0379] For example, surface tension resulting from a part of a molecular structure, including monomers, monomer backbone units, linkers, and / or functional groups, can be determined using various methods known in the art. Non-limiting examples of such methods include the use of parachutes. A further description of parachutes is, for example, in "Conception and Significance of the Parachor" Nature. 196:890-891. In some non-limiting examples, at least one functional group of a monomer has a surface tension of less than 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0380] In some non-limiting examples, the monomer comprises at least one of the CF2 and CF2H moieties. In some non-limiting examples, the monomer comprises at least one of the CF2 and CF3 moieties. In some non-limiting examples, the monomer comprises a CH2CF3 moiety. In some non-limiting examples, the monomer comprises at least one of carbon and oxygen. In some non-limiting examples, the monomer comprises a fluorocarbon monomer. In some non-limiting examples, the monomer comprises a vinyl fluoride moiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, a chlorotrifluoroethylene moiety, a hexafluoropropylene moiety, and / or a fluorinated 1,3-dioxole moiety.

[0381] In some non-limiting examples, a monomer includes a monomer skeleton and functional groups. In some non-limiting examples, functional groups are bonded to the monomer skeleton either directly or via linker groups. In some non-limiting examples, a monomer includes linker groups, and these linker groups are bonded to the monomer skeleton and functional groups. In some non-limiting examples, a monomer may include two or more functional groups, which may be the same or different from each other. In such examples, each functional group may be bonded to the monomer skeleton either directly or via linker groups. In some non-limiting examples where two or more functional groups are present, two or more linker groups may also be present.

[0382] In some non-limiting examples, at least one molecular structure of the material of the patterned coating 210, which may be the first material and / or the second material, contains two or more different monomers. In other words, such a molecular structure contains monomer species having different molecular compositions and / or molecular structures from one another. A non-limiting example of such a molecular structure is represented by the following formula. (Mon A ) k (Mon B )m (Mon A ) k (Mon A ) m(Mon C ) o Equation (I-1) Equation (I-2) During the ceremony, Mon A Mon B , and Mon C Each represents a monomer species, and k, m, and o each represent an integer greater than 2. In some non-restrictive examples, k, m, and o represent integers between 2 and 100, 2 and 50, 3 and 20, 3 and 15, 3 and 10, or 3 and 7, respectively. Various non-restrictive examples and explanations of the monomer Mon are given in Mon. A Mon B , and Mon C It is understood that this may be applicable to each of them.

[0383] In some non-restrictive examples, monomers can be represented by the following formulas: M-(LR x ) y formula ( II ) In the formula, M represents a monomer skeleton unit, L represents a linker group, R represents a functional group, x is an integer from 1 to 4, and y is an integer from 1 to 3.

[0384] In some non-restrictive examples, the linker group is represented by a single bond, or at least one of O, N, NH, C, CH, CH2, and S.

[0385] Various non-limiting examples of functional groups described herein are given by formula ( II )This may apply to R. In some non-limiting examples, the functional group R comprises an oligomer unit, the oligomer unit further comprising at least two functional group monomer units. In some non-limiting examples, the functional group monomer units may be CH2 and / or CF2. In some non-limiting examples, the functional group comprises a CH2CF3 portion. For example, such functional group monomer units may be bonded together to form an alkyl and / or fluoroalkyl oligomer unit. In some non-limiting examples, the oligomer unit further comprises a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be arranged at the end of an oligomer unit and bonded to a functional group monomer unit. In some non-limiting examples, the end on which the functional group terminal unit is arranged may correspond to a portion of the functional group distal to the monomer backbone unit. Non-limiting examples of functional group terminal units include CF2H and CF3.

[0386] In some non-limiting examples, the monomer skeletal unit M has high surface tension. In some non-limiting examples, the monomer skeletal unit has higher surface tension than at least one of the functional groups R to which it is bonded. In some further non-limiting examples, the monomer skeletal unit has higher surface tension than any functional group R to which it is bonded.

[0387] In some non-limiting examples, monomer backbone units have surface tensions greater than approximately 25 dynes / cm, greater than approximately 30 dynes / cm, greater than approximately 40 dynes / cm, greater than approximately 50 dynes / cm, greater than approximately 75 dynes / cm, greater than approximately 100 dynes / cm, greater than approximately 150 dynes / cm, greater than approximately 200 dynes / cm, greater than approximately 250 dynes / cm, greater than approximately 500 dynes / cm, greater than approximately 1,000 dynes / cm, greater than approximately 1,500 dynes / cm, or greater than approximately 2,000 dynes / cm.

[0388] In some non-restrictive examples, the monomer skeleton unit contains phosphorus (P) and nitrogen (N). An example of such a non-restrictive monomer skeleton unit is phosphazene, where a double bond exists between P and N, and which can be represented as "NP" or "N=P". In some non-restrictive examples, the monomer skeleton unit contains silicon (Si) and oxygen (O). An example of such a non-restrictive monomer skeleton unit is silsesquioxane, which is SiO 3 / 2 It can be expressed as follows.

[0389] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (NP-(LR x ) y ) n Formula (III)

[0390] In formula (III), NP represents a phosphazene monomer skeleton unit, L represents a linker group, R represents a functional group, x is an integer from 1 to 4, y is an integer from 1 to 3, and n is an integer greater than or equal to 2.

[0391] In some non-limiting examples, the molecular structure of the first material and / or the second material is represented by formula (III). In some further non-limiting examples, at least one of the first material and the second material is a cyclophosphazene. In some further non-limiting examples, the molecular structure of a cyclophosphazene is represented by formula (III).

[0392] In some non-limiting examples, L represents oxygen, x is 1, and R represents a fluoroalkyl group. In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (NP(OR f )2) n Formula (IV) In the formula, R frepresents a fluoroalkyl group, and n is an integer between 3 and 7.

[0393] In some non-limiting examples, a fluoroalkyl group includes at least one of the following: CF2, CF2H, CH2CF3, and CF3 groups. In some non-limiting examples, a fluoroalkyl group is represented by the following formula:

[0394] [ka] In the formula, p is an integer between 1 and 5, q is an integer between 6 and 20, and Z represents hydrogen or fluorine. In some non-restrictive examples, p is 1 and q is an integer between 6 and 20.

[0395] In some non-limiting examples, the fluoroalkyl group R in formula (IV) f This is expressed by equation (V).

[0396] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -(LR)) n Equation (VI)

[0397] In equation (VI), L represents a linker group, R represents a functional group, and n is an integer between 6 and 12.

[0398] In some non-limiting embodiments, L represents the presence of a single bond, O, a substituted alkyl, or an unsubstituted alkyl. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, R includes a functional group having low surface tension. In some non-limiting examples, R includes an F-containing group and / or a Si-containing group. In some non-limiting examples, R includes a fluorocarbon group and / or a siloxane-containing group. In some non-limiting examples, R includes a CF2 group and / or a CF2H group. In some non-limiting examples, R includes a CF2 group and / or a CF3 group. In some non-limiting examples, R includes a CH2CF3 group. In some non-limiting examples, the material represented by formula (VI) is a polyoctahedral silsesquioxane.

[0399] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -R f ) n Formula (VII) In the formula, n is an integer between 6 and 12, and Rf represents a fluoroalkyl group. In some non-limiting examples, n is 8, 10, or 12. In some non-limiting examples, Rf includes a functional group having low surface tension. In some non-limiting examples, Rf includes a CF2 moiety and / or a CF2H moiety. In some non-limiting examples, Rf includes a CF2 moiety and / or a CF3 moiety. In some non-limiting examples, Rf includes a CH2CF3 moiety. In some non-limiting examples, the material represented by formula (VII) is a polyoctahedral silsesquioxane.

[0400] In some non-limiting examples, the fluoroalkyl group R in formula (VII) f This is expressed by equation (V).

[0401] In some non-limiting examples, for example, at least a portion of the molecular structure of at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, is represented by the following formula: (SiO 3 / 2 -(CH2) x (CF3)) n Formula (VIII)

[0402] In formula (VIII), x is an integer between 1 and 5, and n is an integer between 6 and 12. In some non-restrictive cases, n is 8, 10, or 12. In some non-restrictive cases, the compound represented by formula (VIII) is a polyoctahedral silsesquioxane.

[0403] In some non-limiting examples, the functional group R and / or fluoroalkyl group R f The group(s) can be independently selected at each occurrence of such a group in any of the aforementioned formulas. It will also be understood that any of the aforementioned formulas can represent a substructure of a compound, and that additional groups or parts not explicitly shown in the above formulas may exist. It will also be understood that the various formulas provided in this application may represent linear, branched, cyclic, cyclo-linear, and / or bridging structures.

[0404] In some non-limiting examples, the patterned coating 210 comprises at least one material represented by at least one of the following formulas (I), (I-1), (I-2), (II), (III), (IV), (VI), (VII), and (VIII), and at least one material exhibiting at least one of the following properties: (a) containing an aromatic hydrocarbon moiety, (b) sp 2 (c) containing carbon, (d) having a characteristic surface energy greater than approximately 20 dynes / cm, and (e) exhibiting photoluminescence, including, as a non-limiting example, exhibiting photoluminescence at wavelengths greater than approximately 365 nm when irradiated with excitation radiation having a wavelength of approximately 365 nm.

[0405] In some non-limiting examples, the patterned coating may further include a third material different from the first and second materials. In some non-limiting examples, the third material includes monomers common to at least one of the first and second materials.

[0406] In some non-limiting examples, including but not limited to such differences between the first and second materials, the difference in sublimation temperatures between two or more materials of the patterned coating 210 is about 5°C, about 10°C, about 15°C, about 20°C, about 30°C, about 40°C, or about 50°C or less. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, includes at least one of F and Si, and the sublimation temperatures of the materials of the patterned coating 210 differ by only about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C or less. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, comprises at least one of a carbon fluoride portion and a siloxane portion, and the sublimation temperatures of the materials of the patterned coating 210 differ by only about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C or less.

[0407] In some non-limiting examples, including but not limited to such differences between a first NIC material and a second NIC material, the difference in melting temperatures between two or more materials of the patterned coating 210 is about 5°C, about 10°C, about 15°C, about 20°C, about 30°C, about 40°C, or about 50°C or less. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be the first material and / or the second material, contains at least one of F and Si, and the difference in melting temperatures of the materials of the patterned coating 210 is only about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C or less. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, comprises at least one of a carbon fluoride portion and a siloxane portion, and the melting temperatures of the materials of the patterned coating 210 differ by only about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C or less.

[0408] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, has a low characteristic surface energy. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, has a low characteristic surface energy, and at least one of the materials of the patterned coating 210 contains at least one of F and Si. In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a first material and / or a second material, has a low characteristic surface energy, contains at least one of F and Si, and at least one of the other materials of the patterned coating 210 has a high characteristic surface energy. In some non-limiting examples, the presence of F and Si may be explained by the presence of a fluorocarbon moiety and a siloxane moiety, respectively. As an unrestricted example, at least one of the materials that may correspond to the second material may have a low characteristic surface energy of about 10-20 dynes / cm, 12-20 dynes / cm, 15-20 dynes / cm, or 17-19 dynes / cm, while another material that may correspond to the first material may have a high characteristic surface energy of about 20-100 dynes / cm, 20-50 dynes / cm, or 25-45 dynes / cm. In some unrestricted examples, at least one of the materials contains at least one of F and Si. As an unrestricted example, the second material may contain at least one of F and Si.

[0409] In some non-limiting examples, for example, at least one of the materials of the patterned coating 210, which may be a second material, has a low characteristic surface energy of less than about 20 dynes / cm and contains at least one of F and / or Si, and at least one of the other materials of the patterned coating 210, which may be a first material, has a characteristic surface energy greater than about 20 dynes / cm.

[0410] In some non-limiting examples, at least one of the materials of the patterned coating 210 (which may be a second material) has a low characteristic surface energy of less than about 20 dynes / cm and includes at least one of a fluorocarbon moiety and a siloxane moiety, while at least one of the other materials of the patterned coating 210 (which may be a first material) has a characteristic surface energy greater than about 20 dynes / cm.

[0411] In some non-limiting examples, the surface energies of each of the two or more materials of the patterned coating 210, including but not limited to the surface energies of the first and second materials, are less than about 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0412] In some non-limiting examples, the refractive index at 500 nm and / or 460 nm of at least one of the materials of the patterned coating 210, including but not limited to the first and second materials, is less than approximately 1.5, less than approximately 1.45, less than approximately 1.44, less than approximately 1.43, less than approximately 1.42, or less than approximately 1.41. In some non-limiting examples, the patterned coating 210 includes at least one material that exhibits photoluminescence, and the patterned coating 210 has a refractive index at 500 nm and / or 460 nm of less than approximately 1.5, less than approximately 1.45, less than approximately 1.44, less than approximately 1.43, less than approximately 1.42, or less than approximately 1.41.

[0413] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 210, including but not limited to the molecular weights of the first and second materials, is greater than approximately 750, greater than approximately 1,000, greater than approximately 1,500, greater than approximately 2,000, greater than approximately 2,500, or greater than approximately 3,000.

[0414] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 210, including but not limited to the molecular weights of the first and second materials, is less than approximately 10,000, less than approximately 7,500, or less than approximately 5,000.

[0415] In some non-limiting examples, a NIC comprises two or more materials exhibiting similar thermal properties to one another, and at least one of the materials exhibits photoluminescence. In some non-limiting examples, a patterned coating comprises two or more materials having similar thermal properties to one another, at least one of the materials exhibits photoluminescence, and at least one or all of the materials contain fluorine (F) and / or silicon (Si). In some non-limiting examples, a patterned coating comprises two or more materials having similar thermal properties to one another, at least one of the materials exhibits photoluminescence at wavelengths above 365 nm when excited by radiation having an excitation wavelength of 365 nm, and at least one or all of the materials contain fluorine (F) and / or silicon (Si). In some non-limiting examples, similar thermal properties may include, but are not limited to, the melting temperature and / or sublimation temperature of the materials.

[0416] In some non-limiting examples, the patterned coating comprises two or more materials having at least one common element or at least one common substructure, and at least one of the materials exhibits photoluminescence. In some non-limiting examples, at least one or all of the materials contain fluorine (F) and / or silicon (Si). In some non-limiting examples, the patterned coating comprises two or more materials having similar thermal properties to each other, and at least one of the materials exhibits photoluminescence at wavelengths above 365 nm when excited by radiation having an excitation wavelength of 365 nm, and at least one or all of the materials contain fluorine (F) and / or silicon (Si). In some non-limiting examples, at least one common element contains, but is not limited to, fluorine (F) and / or silicon (Si). In some non-limiting examples, at least one common substructure contains, but is not limited to, fluorocarbons, fluoroalkyls and / or siloxyls.

[0417] In one embodiment, a method for manufacturing an optoelectronic device is provided. The method includes (i) depositing a nucleation-inhibiting coating (NIC) on a first layer surface of a device in a first portion of the side surface of the device, and (ii) depositing a conductive coating on a second layer surface of a device in a second portion of the side surface of the device. The initial adhesion probability for forming the conductive coating on the surface of the patterned coating in the first portion is substantially lower than the initial adhesion probability for forming the conductive coating on the surface of the second portion, and as a result, the surface of the patterned coating in the first portion is substantially devoid of the conductive coating. The NIC deposited on the first layer surface of the device comprises a first material and a second material.

[0418] In some non-limiting examples, depositing a patterned coating on a first layer surface of a device includes providing a mixture containing two or more materials, and depositing the mixture on a first layer surface of a device to form a NIC thereon. In some non-limiting examples, the mixture contains a first material and a second material. In such non-limiting examples, both the first material and the second material are deposited on the first layer surface to form a patterned coating thereon.

[0419] In some non-limiting examples, a mixture containing two or more patterned coating materials is deposited on the first layer surface of a device by a physical vapor deposition process. A non-limiting example of such a deposition process is thermal evaporation. In some non-limiting examples, the patterned coating is formed by evaporating the mixture from a common evaporation source and depositing the mixture on the first layer surface of the device. In other words, in a non-limiting example, a mixture containing a first material and a second material may be placed in a common crucible and / or evaporation source to heat the mixture under vacuum. Once the evaporation temperature of the material is reached or exceeded, the vapor flux generated from the mixture is directed onto the first layer surface of the device, causing the deposition of the patterned coating thereon.

[0420] In some non-limiting examples, the patterned coating is deposited by co-evaporation of a first material and a second material. In some further non-limiting examples, the first material is evaporated from a first crucible and / or a first evaporation source, and the second material is evaporated simultaneously from a second crucible and / or a second evaporation source, so that the mixture is formed in the gas phase and co-deposited on the surface of the first layer, providing a patterned coating thereon.

[0421] The following experiment was conducted to evaluate the properties of a specific exemplary patterned coating containing at least two materials.

[0422] A series of samples were prepared by depositing a layer of organic material, typically used as a hole transport layer material, with a thickness of approximately 20 nm in a vacuum, and then depositing nucleation-modifying coatings with various compositions, as summarized in the table below, on top of the organic material layer.

[0423] [Table 9]

[0424] In this example, the NIC material was selected such that, for example, when deposited as a thin film, the NIC material exhibits a low initial adhesion probability to the conductive coating material, which may contain Ag and / or Yb, for example.

[0425] In this example, PL material 1 and PL material 2 were selected such that, when deposited as thin films, each of them exhibits photoluminescence detectable by standard optical measurement techniques (e.g., fluorescence microscopy).

[0426] In the table above, Sample 1 is a comparative sample in which the nucleation-modified coating was provided by depositing NIC material. Sample 2 is an example sample in which the nucleation-modified coating was provided by co-depositing NIC material and PL material 1 together to form a coating containing PL material 1 at a concentration of 0.5 volume%. Sample 3 is an example sample in which the nucleation-modified coating was provided by co-depositing NIC material and PL material 2 together to form a coating containing PL material 2 at a concentration of 0.5 volume%. Sample 4 is a comparative sample in which the nucleation-modified coating was provided by depositing PL material 1. Sample 5 is a comparative sample in which the nucleation-modified coating was provided by depositing PL material 2. Sample 6 is a comparative sample in which the nucleation-modified coating was not provided on an organic material layer.

[0427] The photoluminescence (PL) responses of each of the samples, Sample 1, Sample 2, Sample 3, and Sample 6, were measured and shown in Figure. 36The data was plotted as shown in the figure. It was observed that the PL intensities of sample 1 and sample 6 were identical, thus indicating that the NIC material does not exhibit photoluminescence in the detected wavelength range. 36 For simplicity, the PL intensity of sample 6 is not plotted. Photoluminescence was detected for both sample 2 and sample 3 at wavelengths of approximately 500 nm to 600 nm.

[0428] Next, open-mask deposition of Yb, followed by Ag, was performed on each of samples 1 to 6. Specifically, open-mask deposition of Yb, followed by Ag, was performed on the surface of the nucleation-modifying coating formed by the above materials. More specifically, each sample was exposed to a Yb vapor flux until a reference thickness of approximately 1 nm was reached, and then to an Ag vapor flux until a reference thickness of approximately 12 nm was reached. After the samples were prepared, light transmittance measurements were performed to determine the relative amounts of Yb and / or Ag deposited on the surface of the nucleation-modifying coating. As can be understood, samples with relatively small amounts of metal present or without metal present are substantially transparent, while samples with metal deposited on them (especially as a closed film) generally exhibit substantially lower light transmittance. Therefore, the relative performance of various exemplary coatings as patterned coating 210 may be assessed by measuring the light transmission through the sample, which directly correlates from the amount or thickness of the metal coating deposited thereon from the Yb and / or Ag deposition. The reduction in light transmittance at a wavelength of 460 nm after exposure of each sample to Ag vapor flux was measured and summarized in the table below.

[0429] [Table 10]

[0430] Specifically, the transmittance reduction (%) for each sample in the table above was determined by measuring the light transmittance passing through the sample before and after exposure to Yb and Ag vapor flux, and expressing the reduction in light transmittance as a percentage.

[0431] As can be seen, samples 1, 2, and 3 showed relatively low transmittance reductions of less than 2%, or less than 1% in the case of samples 1 and 3. Therefore, it is observed that the nucleation-modifying coatings provided to these samples acted as NICs. Samples 4, 5, and 6 showed transmittance reductions of 43%, 47%, and 45%, respectively. Therefore, the nucleation-modifying coatings provided to these samples acted as NPCs.

[0432] Furthermore, it was found that sample 1, in which NIC substantially consisted only of NIC material, did not exhibit photoluminescence. However, it was found that samples 2 and 3, in which NIC contained PL material 1 and PL material 2, respectively, exhibited photoluminescence while also functioning as NIC by providing a surface with a low initial adhesion probability to the conductive coating material.

[0433] As used in this and other examples described herein, the reference layer thickness refers to the layer thickness of the metal coating deposited on a reference surface exhibiting a high initial adhesion probability S0 (e.g., a surface with an initial adhesion probability S0 of approximately and / or close to 1.0). Specifically, in these examples, the reference surface was the surface of a quartz crystal positioned within the deposition chamber to monitor the deposition rate and reference layer thickness. In other words, the reference layer thickness does not represent the actual thickness of the metal coating deposited on the target surface (i.e., the surface of the patterned coating 210). Rather, the reference layer thickness refers to the layer thickness of the metal coating deposited on the reference surface (i.e., the surface of the quartz crystal) when the target surface and the reference surface are exposed to the same vapor flux of the metallic material over the same deposition period. As understood, if the target surface and the reference surface are not simultaneously exposed to the same vapor flux during deposition, the reference thickness can be determined and monitored using an appropriate tooling factor.

[0434] sedimentary layer In some non-limiting examples, in a second portion 402 of the side of device 1000, the deposited layer 1030 containing the deposited material 1231 may be arranged as a closed coating 1040 on the underlying exposed layer surface 11, which may include the substrate 10.

[0435] In some non-limiting examples, the sedimentary layer 1030 may contain the sedimentary material 1231.

[0436] In some non-limiting examples, the deposited material 1231 may contain elements selected from at least one of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the elements may contain at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the elements may contain at least one of Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the elements may contain at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element may include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element may include at least one of Mg or Ag. In some non-limiting examples, the element may be Ag.

[0437] In some non-limiting examples, the deposit material 1231 may be a pure metal and / or may contain a pure metal. In some non-limiting examples, the deposit material 1231 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposit material 1231 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least one of about 95%, about 99%, about 99.9%, about 99.99%, about 99.999%, or about 99.9995%.

[0438] In some non-limiting examples, the deposited material 1231 may contain an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, a Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that is in the range of about 1:10 (Ag:Mg) to about 10:1 in volume ratio.

[0439] In some non-limiting examples, the deposited material 1231 may contain other metals instead of Ag, and / or in combination with Ag. In some non-limiting examples, the deposited material 1231 may contain alloys of Ag with at least one other metal. In some non-limiting examples, the deposited material 1231 may contain alloys of Ag with at least one of Mg or Yb. In some non-limiting examples, such alloys may be binary alloys having a composition of about 5 to 95 volume percent Ag, with the remainder being another metal. In some non-limiting examples, the deposited material 1231 may contain Ag and Mg. In some non-limiting examples, the deposited material 1231 may contain an Ag:Mg alloy having a composition of about 1:10 to 10:1 by volume. In some non-limiting examples, the deposited material 1231 may contain Ag and Yb. In some non-limiting examples, the deposited material 1231 may contain a Yb:Ag alloy having a composition of about 1:20 to 10:1 by volume. In some non-limiting examples, the deposited material 1231 may contain Mg and Yb. In some non-limiting examples, the deposited material 1231 may contain an Mg:Yb alloy. In some non-limiting examples, the deposited material 1231 may contain Ag, Mg, and Yb. In some non-limiting examples, the deposited layer 1030 may contain an Ag:Mg:Yb alloy.

[0440] In some non-limiting examples, the deposited layer 1030 may contain at least one additional element. In some non-limiting examples, such additional element may be a nonmetallic element. In some non-limiting examples, the nonmetallic element may be at least one of O, S, N, or C. In some non-limiting examples, it will be understood by those skilled in the art that such additional elements may be incorporated into the deposited layer 1030 as contaminants due to their presence in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the deposited layer 1030. In some non-limiting examples, the concentration of nonmetallic elements in the sedimentary material 1231 may be at least one of approximately 1%, approximately 0.1%, approximately 0.01%, approximately 0.001%, approximately 0.0001%, approximately 0.000001%, approximately 0.000001%, or approximately 0.0000001%. In some non-limiting examples, the sedimentary layer 1030 may have a composition in which the total amount of O and C in it may be at least one of approximately 10%, approximately 5%, approximately 1%, approximately 0.1%, approximately 0.01%, approximately 0.001%, approximately 0.0001%, approximately 0.00001%, approximately 0.000001%, or approximately 0.0000001%.

[0441] Somewhat surprisingly, it has been found that reducing the concentration of certain nonmetallic elements in the deposited layer 1030 can facilitate the selective deposition of the deposited layer 1030, particularly when the deposited layer 1030 may be substantially composed of metals and / or metallic alloys. While we do not wish to be bound by any particular theory, as a non-limiting example, we may assume that certain nonmetallic elements, such as O or C, when present in the vapor flux 1232 of the deposited layer 1030 and / or in the deposition chamber and / or in the environment, can deposit on the surface of the patterned coating 210 and act as nucleation sites for the metallic elements in the deposited layer 1030. It can be assumed that reducing the concentration of such nonmetallic elements that can act as nucleation sites can facilitate the reduction of the amount of deposited material 1231 deposited on the exposed layer surface 11 of the patterned coating 210.

[0442] In some non-limiting examples, the deposited material 1231 may be deposited on a metal-containing sublayer. In some non-limiting examples, the deposited material 1231 and the sublayer beneath it may contain a common metal.

[0443] In some non-limiting examples, the deposited layer 1030 may include multiple layers of deposited material 1231. In some non-limiting examples, the deposited material 1231 of the first layer of the multiple layers may be different from the deposited material 1231 of the second layer of the multiple layers. In some non-limiting examples, the deposited layer 1030 may include a multilayer coating. In some non-limiting examples, such a multilayer coating may be at least one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, or Yb / Mg / Ag.

[0444] In some non-limiting examples, the deposited material 1231 may contain metals having bond dissociation energies of at least one of the following: about 300 kJ / mol, about 200 kJ / mol, about 165 kJ / mol, about 150 kJ / mol, about 100 kJ / mol, about 50 kJ / mol, or about 20 kJ / mol.

[0445] In some non-limiting examples, the deposited material 1231 may contain metals having an electronegativity of at least one of about 1.4, about 1.3, or about 1.2.

[0446] In some non-limiting examples, the sheet resistance of the deposited layer 1030 may generally correspond to the sheet resistance of the deposited layer 1030 measured or determined separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the deposited layer 1030 may be formed as a thin film. Thus, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 1030 can be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance may be at least one of approximately 10 Ω / □, approximately 5 Ω / □, approximately 1 Ω / □, approximately 0.5 Ω / □, approximately 0.2 Ω / □, or approximately 0.1 Ω / □.

[0447] In some non-limiting examples, the deposit layer 1030 may be arranged in a pattern that can be defined by at least one region substantially lacking a closed coating 1040 of the deposit layer 1030. In some non-limiting examples, at least one region can separate the deposit layer 1030 into a plurality of distinct fragments. In some non-limiting examples, each distinct fragment of the deposit layer 1030 may be a distinct second portion 402. In some non-limiting examples, the plurality of distinct fragments of the deposit layer 1030 may be physically separated from each other on their sides. In some non-limiting examples, at least two of such plurality of distinct fragments of the deposit layer 1030 may be electrically coupled. In some non-limiting examples, at least two of such plurality of distinct fragments of the deposit layer 1030 may each be electrically coupled to a common conductive layer or coating, including but not limited to an underlying surface, to allow the flow of current between them. In some non-limiting examples, at least two of such plurality of distinct fragments of the deposit layer 1030 may be electrically insulated from each other.

[0448] Selective deposition using patterned coatings Figure 11 is an exemplary schematic diagram showing a non-limiting example of a vapor deposition process generally shown in 1100 within a chamber 1110 for selectively depositing a patterned coating 210 onto a first portion 401 of the lower exposed layer surface 11.

[0449] In process 1100, a certain amount of patterning material 1111 is heated under vacuum to evaporate and / or sublimate the patterning material 1111. In some non-limiting examples, the patterning material 1111 may entirely and / or substantially contain the material used to form the patterned coating 210. In some non-limiting examples, such material may contain an organic material.

[0450] The vaporized flux 1112 of the patterned material 1111 can flow through the chamber 1110 toward the exposed layer surface 11, including in the direction indicated by the arrow 111. When the vaporized flux 1112 is incident on the exposed layer surface 11, the patterned coating 210 can be formed thereon.

[0451] In some non-limiting examples, as shown in the figure of process 1100, the patterned coating 210 may be selectively deposited only on a portion of the exposed layer surface 11, specifically on the first portion 401 in the illustrated example, by interposing a shadow mask 1115, which in some non-limiting examples may be an FMM, between the vaporized flux 1112 and the exposed layer surface 11. In some non-limiting examples, such a shadow mask 1115 may be used to form relatively small features having a feature size of tens of microns or less.

[0452] The shadow mask 1115 may have at least one opening 1116 extending through the shadow mask so that a portion of the vaporized flux 1112 can pass through the opening 1116 and be incident on the exposed layer surface 11 to form the patterned coating 210. If the vaporized flux 1112 does not pass through the opening 1116 but is incident on the surface 1117 of the shadow mask 1115, it is prevented from being placed on the exposed layer surface 11 and forming the patterned coating 210. In some non-limiting examples, the shadow mask 1115 may be configured such that the vaporized flux 1112 passing through the opening 1116 can be incident on a first portion 401 but not on a second portion 402. Thus, the second portion 402 of the exposed layer surface 11 may substantially lack the patterned coating 210. In some non-limiting examples (not shown), the patterned material 1111 incident on the shadow mask 1115 may be deposited on its surface 1117.

[0453] Therefore, a patterned surface can be generated upon completion of the deposition of the patterned coating 210.

[0454] Figure 12 shows, generally speaking, a chamber 1110, for selectively depositing a closed coating 1040 of a deposited layer 1030 onto a second portion 402 of an exposed layer surface 11 that substantially lacks the patterned coating 210 selectively deposited on a first portion 401, including but not limited to the deposition process 1100 of Figure 11. a This is an illustrative schematic diagram showing a non-limiting example of the results of the deposition process shown.

[0455] In some non-limiting examples, the deposit layer 1030 may consist of deposit material 1231, which in some non-limiting examples may contain at least one metal. It will be understood by those skilled in the art that the vaporization temperature of organic materials is generally lower than that of metals that may be used as deposit material 1231.

[0456] Therefore, in some non-limiting examples, using a shadow mask 1115 to selectively deposit a patterned coating 210 in a certain pattern may be less restrictive than directly patterning the deposited layer 1030 by employing such a shadow mask 1115.

[0457] Once the patterned coating 210 is deposited on the first portion 401 of the underlying exposed layer surface 11, a closed coating 1040 of the deposit material 1231 may be deposited as a deposit layer 1030 on the second portion 402 of the exposed layer surface 11 that is substantially lacking the patterned coating 210.

[0458] Process 1200 a Then, a certain amount of the deposit material 1231 can be heated under vacuum to evaporate and / or sublimate it. In some non-limiting examples, the deposit material 1231 may contain all and / or substantially the material used to form the deposit layer 1030.

[0459] The vaporized flux 1232 of the deposited material 1231 may be directed inward into the chamber 1110, including the direction indicated by arrow 121, toward the exposed layer surfaces 11 of the first portion 401 and the second portion 402. When the vaporized flux 1232 is incident on the second portion 402 of the exposed layer surface 11, a closed coating 1040 of the deposited material 1231 may be formed on it as a deposited layer 1030.

[0460] In some non-limiting examples, the deposition of the deposition material 1231 may be carried out using open-mask and / or mask-free deposition processes.

[0461] In contrast to the feature size of the shadow mask 1115, it will be understood by those skilled in the art that the feature size of the open mask may be approximately equivalent to the size of the manufactured device 100.

[0462] It will be understood by those skilled in the art that in some non-limiting examples, the use of an open mask may be omitted. In some non-limiting examples, the open mask deposition process described herein may instead be carried out without an open mask so that the entire surface 11 of the target exposed layer can be exposed.

[0463] In fact, as shown in Figure 12, the vaporized flux 1232 can be incident on both the exposed layer surface 11 of the patterned coating 210 over the first portion 401 and the underlying exposed layer surface 11 over the second portion 402 where the patterned coating 210 is substantially absent.

[0464] The exposed layer surface 11 of the patterned coating 210 in the first portion 401 may exhibit a relatively low initial adhesion probability for the deposition of the deposition material 1231 compared to the underlying exposed layer surface 11 in the second portion 402. Therefore, the deposition layer 1030 can be substantially selectively deposited only on the underlying exposed layer surface 11 in the second portion 402, which substantially lacks the patterned coating 210. In contrast, vaporized flux 1232 incident on the exposed layer surface 11 of the patterned coating 210 across the first portion 401 may tend not to deposit (as shown in 1233), and the exposed layer surface 11 of the patterned coating 210 across the first portion 401 may substantially lack the closed coating 1040 of the deposition layer 1030.

[0465] In some non-limiting examples, the initial deposition rate of vaporized flux 1232 on the underlying exposed layer surface 11 in the second portion 402 may exceed at least one of approximately 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times, or approximately 2,000 times the initial deposition rate of vaporized flux 1232 on the exposed layer surface 11 of the patterned coating 210 in the first portion 401.

[0466] Therefore, the combination of selective deposition of the patterned coating 210 and / or mask-free deposition of the deposition material 1231 in Figure 11 using a shadow mask 1115 and an open mask is equivalent to version 1200 of device 100 shown in Figure 12. a This could lead to...

[0467] Following the selective deposition of the patterned coating 210 over the first portion 401, the closed coating 1040 of the deposited material 1231 is deposited as the deposited layer 1030 of the device 1200 using an open mask and / or mask-free deposition process in some non-limiting examples. a It may be deposited on top of but may remain substantially only within the second portion 402 which the patterned coating 210 substantially lacks.

[0468] The patterned coating 210 is applied to the device 1200 within the first portion 401 and the second portion 402. a This provides an exposed layer surface 11 of the lower material having a relatively low initial adhesion probability to the deposition of the deposited material 1231, which is substantially less than or equal to the initial adhesion probability to the deposition of the deposited material 1231.

[0469] Therefore, the first portion 401 may substantially lack a closed coating 1040 of the deposited material 1231.

[0470] This disclosure intends to describe the patterned deposition of a patterned coating 210 by a vapor deposition process with a shadow mask 1115, but those skilled in the art will understand that in some non-limiting examples this can be achieved by any suitable deposition process, including but not limited to a microcontact printing process.

[0471] This disclosure intends for the patterned coating 210 to be a NIC, but those skilled in the art will understand that in some non-limiting examples the patterned coating 210 may be an NPC 1420. In such examples, the portion to which the NPC 1420 is deposited (e.g., a first portion 401, but not limited) may, in some non-limiting examples, have a closed coating 1040 of the deposited material 1231, while other portions (e.g., a second portion 402, but not limited) may substantially lack a closed coating 1040 of the deposited material 1231.

[0472] In some non-limiting examples, the average thickness of the patterned coating 210 and the subsequently deposited layer 1030 may vary according to various parameters, including, but not limited to, a given application and a given performance characteristic. In some non-limiting examples, the average thickness of the patterned coating 210 may be equal to, and / or substantially less than, the average thickness of the subsequently deposited layer 1030. The use of a relatively thin patterned coating 210 to achieve selective patterning of the deposited layer 1030 may be suitable for providing a flexible device 1000. In some non-limiting examples, the relatively thin patterned coating 210 may be a barrier coating or other thin-film encapsulation (TFE) layer 2250. (Figure 22B) It can provide a relatively flat surface on which the coating can be deposited. In some non-limiting examples, providing such a relatively flat surface for the application of such a barrier coating 1950 can increase its adhesion to such a surface.

[0473] Edge effect Patterned coating transition region Referring to Figure 13A, the interface between the patterned coating 210 in the first portion 401 and the deposited layer 1030 in the second portion 402 can be shown in an exaggerated form in the device 1300 of Figure 10. a Version 1000 may be shown. Figure 13B shows device 1300. a This can be shown in a plan view.

[0474] As better illustrated in Figure 13B, in some non-limiting examples, the patterned coating 210 within the first portion 401 may be surrounded on all sides by the deposit layer 1030 within the second portion 402, thereby the first portion 401 may have a boundary defined by a further extent of the patterned coating 210 or by an edge 1315 along each transverse axis. In some non-limiting examples, the patterned coating edge 1315 on the side may be defined by the outer perimeter of the first portion 401 in such an embodiment.

[0475] In some non-limiting examples, the first portion 401 has at least one patterned coating transition region 401 on its side t This region may include a region in which the thickness of the patterned coating 210 can transition from the maximum thickness to a reduced thickness. The region of the first portion 401 that does not show such a transition is the non-transition portion of the patterned coating 401 of the first portion 401. n It may be identified as: In some non-limiting examples, the patterned coating 210 is the patterned coating non-transition portion 401 of the first portion 401. n A substantially closed coating 1040 can be formed in this manner.

[0476] In some non-limiting examples, the patterned coating transition region 401 t In the side view, the patterned coating non-transition portion 401 of the first portion 401 n It may extend between the patterned coating edge 1315 and the patterned coating edge 1315.

[0477] In some non-limiting examples, in the plan view, the patterned coating transition region 401 t This is the patterned coating non-transition portion 401 of the first portion 401 n It may surround and / or extend along its perimeter.

[0478] In some non-limiting examples, along at least one horizontal axis, the patterned coating non-transition portion 401 n This may occupy the entirety of the first portion 401, thereby creating a patterned coating transition region 401 t There is no such thing between it and the second part 402.

[0479] As shown in Figure 13A, in some non-limiting examples, the patterned coating 210 is a patterned coating non-transition portion 401 of the first portion 401. n In this, the average film thickness d2 may be in the range of at least one of approximately 1-100 nm, approximately 2-50 nm, approximately 3-30 nm, approximately 4-20 nm, approximately 5-15 nm, approximately 5-10 nm, or approximately 1-10 nm. In some non-limiting examples, the patterned coating non-transition portion 401 of the first portion 401 n The average film thickness d2 of the patterned coating 210 may be substantially the same or constant over it. In some non-limiting examples, the average layer thickness d2 of the patterned coating 210 is the patterned coating non-transition portion 401 n Within this range, it may remain within at least one of approximately 95% or 90% of the average film thickness d2 of the patterned coating 210.

[0480] In some non-limiting examples, the average film thickness d2 may be approximately 1 to 100 nm. In some non-limiting examples, the average film thickness d2 may be at least one of approximately 80 nm, approximately 60 nm, approximately 50 nm, approximately 40 nm, approximately 30 nm, approximately 20 nm, approximately 15 nm, or approximately 10 nm. In some non-limiting examples, the average film thickness d2 of the patterned coating 210 may exceed at least one of approximately 3 nm, approximately 5 nm, or approximately 8 nm.

[0481] In some non-limiting examples, the patterned coating of the first part 401 is a non-transition part 401. nThe average film thickness d2 of the patterned coating 210 may be about 10 nm or less. Although not bound by any particular theory, somewhat surprisingly, the average film thickness d2 of the patterned coating 210 being greater than 0 and about 10 nm or less is true in at least some non-limiting examples, such as the patterned coating non-transition portion 401 of the first portion 401. n It was found that, compared to a patterned coating 210 having an average film thickness d2 of more than 10 nm, the deposited layer 1030 can offer certain advantages in achieving improved patterning contrast.

[0482] In some non-limiting examples, the patterned coating 210 is a patterned coating transition region 401 t The patterned coating thickness may decrease from maximum to minimum within the first portion 401. In some non-limiting examples, the maximum value is the patterned coating transition region 401 of the first portion 401. t and patterned coating non-transition portion 401 n It may be at the boundary between and / or in its vicinity. In some non-limiting examples, the minimum value may be at and / or in its vicinity of the patterned coating edge 1315. In some non-limiting examples, the maximum value may be at the non-transition portion 401 of the patterned coating of the first portion 401. n The average film thickness d2 may be the first portion 401 of the patterned coating non-transition portion 401. n The minimum value may be at least one of approximately 95% or 90% of the average film thickness d2. In some non-limiting examples, the minimum value may be in the range of approximately 0 to 0.1 nm.

[0483] In some non-limiting examples, the patterned coating transition region 401 tThe profile of the patterned coating thickness may be inclined and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, nonlinear, parabolic, and / or exponentially decaying profile.

[0484] In some non-limiting examples, the patterned coating 210 is a patterned coating transition region 401 t The lower surface may be completely covered. In some non-limiting examples, at least a portion of the lower layer is the patterned coating transition region 401 t The patterned coating 210 may remain uncovered in some cases. In some non-limiting examples, the patterned coating 210 is located in the patterned coating transition region 401. t at least a portion and / or patterned coating non-transition portion 401 n At least a portion of this may include a substantially closed coating 1040.

[0485] In some non-limiting examples, the patterned coating 210 is a patterned coating transition region 401 t at least a portion of and / or patterned coating non-transition portion 401 n The discontinuous layer 130 may be included in at least a portion of it.

[0486] In some non-limiting examples, at least a portion of the patterned coating 210 within the first portion 401 may substantially lack the closed coating 1040 of the deposited layer 1030. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 401 may substantially lack the closed coating 1040 of the deposited layer 1030 or the deposited material 1231.

[0487] In some non-limiting examples, along at least one horizontal axis including but not limited to the x-axis, the patterned coating non-transition portion 401 nThe patterned coating transition region 401 may have a width of w1. t It may have a width of w2. In some non-restrictive examples, the patterned coating non-transition portion 401 n In some non-limiting examples, the cross-sectional area may be approximated by multiplying the average film thickness d2 by the width w1. In some non-limiting examples, the patterned coating transition region 401 t In some non-limiting examples, the patterned coating transition region 401 t It may have a cross-sectional area that can be approximated by multiplying the average film thickness over a certain distance by a width w1.

[0488] In some non-restrictive cases, w1 may exceed w2. In some non-restrictive cases, the quotient of w1 / w2 may be at least one of approximately 5, approximately 10, approximately 20, approximately 50, approximately 100, approximately 500, approximately 1,000, approximately 1,500, approximately 5,000, approximately 10,000, approximately 50,000, or approximately 100,000.

[0489] In some non-limiting examples, at least one of w1 and w2 may exceed the average film thickness d1 of the underlying layer.

[0490] In some non-restrictive cases, at least one of w1 and w2 may exceed d2. In some non-restrictive cases, both w1 and w2 may exceed d2. In some non-restrictive cases, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0491] Sedimentary layer transition region As can be seen better in Figure 13B, in some non-limiting examples, the patterned coating 210 in the first portion 401 may be surrounded by the sedimentary layer 1030 in the second portion 402, thereby the second portion 402 having a boundary along each transverse axis on its sides defined by a further extent or edge 1335 of the sedimentary layer 1030. In some non-limiting examples, the sedimentary layer edge 1335 on the side may be defined by the outer perimeter of the second portion 402 on such side.

[0492] In some non-limiting examples, the second portion 402 is, on the side, at least one sedimentary layer transition region 402 t This may include the fact that the thickness of the sedimentary layer 1030 may transition from the maximum thickness to a reduced thickness. The portion of the second portion 402 that does not show such a transition is the non-transition portion of the sedimentary layer 402 of the second portion 402. n It can be identified as follows. In some non-limiting examples, the sedimentary layer 1030 is the non-transitional portion 402 of the second portion 402 of the sedimentary layer. n A substantially closed coating 1040 may be formed in this manner.

[0493] In some non-limiting examples, in the plane, the sedimentary layer transition region 402 t In the side view, the second portion 402 is the non-transition portion 402 of the sedimentary layer. n It may extend between the sedimentary layer edge 1335 and the sedimentary layer edge 1335.

[0494] In some non-limiting examples, in the plan view, the sedimentary layer transition region 402 t This is the non-transition portion 402 of the second portion 402 of the sedimentary layer. n It may surround and / or extend along its perimeter.

[0495] In some non-limiting examples, along at least one horizontal axis, the second portion 402 of the sedimentary layer non-transition portion 402 n Between it and the first portion 401 is a sedimentary layer transition region 402 t It may occupy the entirety of the second part 402 so that it does not exist.

[0496] As shown in Figure 13A, in some non-limiting examples, the sedimentary layer 1030 is the second portion 402 of the sedimentary layer non-transition portion 402 nIn this case, the average film thickness d3 may be within the range of at least one of approximately 1 to 500 nm, approximately 5 to 200 nm, approximately 5 to 40 nm, approximately 10 to 30 nm, or approximately 10 to 100 nm. In some non-limiting examples, d3 may exceed at least one of approximately 10 nm, approximately 50 nm, or approximately 100 nm. In some non-limiting examples, the deposited layer non-transition portion 402 of the second portion 402 t The average film thickness d3 of the deposited layer 1030 may be substantially the same or constant over it.

[0497] In some non-restrictive cases, d3 may exceed the average film thickness d1 of the underlying layer.

[0498] In some non-limiting examples, the quotient d3 / d1 may be at least one of approximately 1.5, approximately 2, approximately 5, approximately 10, approximately 20, approximately 50, or approximately 100. In some non-limiting examples, the quotient d3 / d1 may also be in the range of at least one of approximately 0.1 to 10 or approximately 0.2 to 40.

[0499] In some non-limiting examples, d3 may exceed the average film thickness d2 of the patterned coating 210.

[0500] In some non-limiting examples, the quotient d3 / d2 may be at least one of approximately 1.5, approximately 2, approximately 5, approximately 10, approximately 20, approximately 50, or approximately 100. In some non-limiting examples, the quotient d3 / d2 may also be in the range of at least one of approximately 0.2 to 10 or approximately 0.5 to 40.

[0501] In some non-restrictive cases, d3 may be greater than d2, and d2 may be greater than d1. In some other non-restrictive cases, d3 may be greater than d1, and d1 may be greater than d2.

[0502] In some non-restrictive examples, the quotient d2 / d1 can be between approximately 0.2 and 3, or between approximately 0.1 and 5, or at least one of these.

[0503] In some non-limiting examples, along at least one horizontal axis including but not limited to the x-axis, the second portion 402 of the sedimentary layer non-transition portion 402 n It may have a width of w3. In some non-restrictive examples, the second portion 402 of the sedimentary layer non-transition portion 402 n In some non-restrictive examples, it may have a cross-sectional area a3 which can be approximated by multiplying the average film thickness d3 by the width w3.

[0504] In some non-limiting examples, w3 is the patterned coating non-transition portion 401 n The width w1 may be greater than the width of w1. In some non-restrictive examples, w1 may be greater than w3.

[0505] In some non-restrictive examples, the quotient w1 / w3 may be in the range of at least one of approximately 0.1 to 10, approximately 0.2 to 5, approximately 0.3 to 3, or approximately 0.4 to 2. In some non-restrictive examples, the quotient w3 / w1 may be at least one of approximately 1, approximately 2, approximately 3, or approximately 4.

[0506] In some non-limiting examples, w3 may exceed the average film thickness d3 of the deposited layer 1030.

[0507] In some non-restrictive cases, the quotient w3 / d3 can be at least one of approximately 10, approximately 50, approximately 100, or approximately 500. In some non-restrictive cases, the quotient w3 / d3 can be less than or equal to approximately 100,000.

[0508] In some non-limiting examples, the sedimentary layer 1030 is in the sedimentary layer transition region 402 t It can have a thickness that decreases from maximum to minimum within. In some non-limiting examples, the maximum value is in the second portion 402 of the sedimentary layer transition region 402. t and the non-transition portion of the sedimentary layer 402 nIt may be at the boundary between and and / or in its vicinity. In some non-limiting examples, the minimum may be at the sedimentary layer edge 1335 and / or in its vicinity. In some non-limiting examples, the maximum may be at the non-transitional portion 402 of the sedimentary layer of the second portion 402. n The average film thickness d3 may be in the range of approximately 0 to 0.1 nm in some non-limiting examples. In some non-limiting examples, the minimum value may be in the range of the non-transition portion 402 of the deposited layer of the second portion 402. n The average film thickness d3 may also be used.

[0509] In some non-limiting examples, the sedimentary transition region 402 t The thickness profile in may be inclined and / or follow a gradient. In some non-limiting examples, such a profile may be tapered. In some non-limiting examples, the taper may follow a linear, nonlinear, parabolic, and / or exponentially decaying profile.

[0510] In some non-limiting examples, the exemplary version 1300 of device 1000 is shown in Figure 13E. e As shown in the non-limiting example in, the sedimentary layer 1030 is in the sedimentary layer transition region 402 t In this case, the lower surface may be completely covered. In some non-limiting examples, the sedimentary layer 1030 is in the sedimentary layer transition region 402 t A substantially closed coating 1040 can be included in at least a portion of it. In some non-limiting examples, at least a portion of the lower surface is a depositional layer transition region 402 t It is not necessary for the sedimentary layer 1030 to cover it.

[0511] In some non-limiting examples, the sedimentary layer 1030 is in the sedimentary layer transition region 402 t The discontinuous layer 130 may be included in at least a portion of it.

[0512] Although not explicitly shown, those skilled in the art will understand that the patterned material 1111 may also be present to some extent at the interface between the deposited layer 1030 and the underlying layer. Such material may be deposited as a result of a shadowing effect where the deposited pattern is not identical to the mask pattern, and in some non-limiting examples, this may result in some evaporated patterned material 1111 deposited on the masked portion of the target exposed layer surface 11. In a non-limiting example, such material may have a granular structure 121 and It can be formed as a thin film having a thickness that is and / or substantially less than or equal to the average thickness of the patterned coating 210.

[0513] overlap In some non-limiting examples, the sedimentary layer edge 1335 is a patterned coating transition region 401 of the first portion 401 t They may be separated from the sides, and as a result there is no overlap between the first part 401 and the second part 402 on the side.

[0514] In some non-limiting examples, at least a portion of the first portion 401 and at least a portion of the second portion 402 may overlap in a lateral manner. Such overlap may be identified by an overlapping portion 1303, as can be shown in Figure 13A as a non-limiting example, where at least a portion of the second portion 402 overlaps at least a portion of the first portion 401.

[0515] In some non-limiting examples, as shown in Figure 13F as a non-limiting example, the sedimentary layer transition region 402 t At least a portion of it is the patterned coating transition region 401 t It may be placed on at least a portion of it. In some non-limiting examples, patterned coating transition region 401 t At least a portion of the deposition layer 1030 and / or deposition material 1231 may substantially lack. In some non-limiting examples, the deposition material 1231 is a patterned coating transition region 401 tA discontinuous layer 130 can be formed on at least a portion of the exposed layer surface 11.

[0516] In some non-limiting examples, as shown in Figure 13G, the sedimentary layer transition region 402 t At least a portion of the patterned coating non-transition portion 401 of the first portion 401 n It may be placed on at least a part of it.

[0517] Although not shown, those skilled in the art will understand that in some non-limiting examples, the overlapping portion 1303 may reflect a scenario in which at least a portion of the first portion 401 overlaps with at least a portion of the second portion 402.

[0518] Therefore, in some non-limiting examples, the patterned coating transition region 401 t At least a portion of it is the sedimentary layer transition region 402 t It may be placed on at least a portion of it. In some non-limiting examples, the sedimentary layer transition region 402 t At least a portion of the patterned coating 210 and / or patterned material 1111 may substantially lack the patterned coating 210 and / or patterned material 1111. In some non-limiting examples, the patterned material 1111 is located in the depositional layer transition region 402 t A discontinuous layer 130 may be formed on at least a portion of the surface of the exposed layer.

[0519] In some non-limiting examples, the patterned coating transition region 401 t At least a portion of it is the non-transition portion 402 of the second portion 402 of the sedimentary layer. n It may be placed on at least a part of it.

[0520] In some non-limiting examples, the patterned coating edge 1315 is on the side of the second portion 402, the non-transition portion 402 of the deposited layer n It may be separated from it.

[0521] In some non-limiting examples, the sedimentary layer 1030 is the second portion 402 of the sedimentary layer non-transition portion 402 n and sedimentary layer transition region 402 t It may be formed as a single monolithic coating over both surfaces.

[0522] Patterned coating and edge effects of deposited layers Figures 14A to 14I illustrate the various potential behaviors of the patterned coating 210 at the deposition interface with the deposited layer 1030.

[0523] Referring to Figure 14A, a first example of a partial exemplary version 1400 of device 1000 at a patterned coating deposition boundary can be shown. Device 1400 may comprise a substrate 10 having an exposed layer surface 11. The patterned coating 210 may be deposited on a first portion 401 of the exposed layer surface 11. The deposited layer 1030 may be deposited on a second portion 402 of the exposed layer surface 11. As shown, in a non-limiting example, the first portion 401 and the second portion 402 may be separate, non-overlapping portions of the exposed layer surface 11.

[0524] The deposit layer 1030 may include a first portion 1301 and a second portion 10302. As shown in the illustration, in a non-limiting example, the first portion 10301 of the deposit layer 1030 may substantially cover the second portion 402, and the second portion 10302 of the deposit layer 1030 may partially protrude and / or overlap the first portion of the patterned coating 210.

[0525] In some non-limiting examples, the patterned coating 210 may be formed such that its exposed layer surface 11 exhibits a relatively low initial adhesion probability to the deposition of the deposited material 1231, so that a gap 1429 may exist between a protruding and / or overlapping second portion 10302 of the deposited layer 1030 and the exposed layer surface 11 of the patterned coating 210. As a result, the second portion 10302 may not be in physical contact with the patterned coating 210, but may be separated from it by the gap 1429 in cross-section. In some non-limiting examples, the first portion 10301 of the deposited layer 1030 may be in physical contact with the patterned coating 210 at the interface and / or boundary between the first portion 401 and the second portion 402.

[0526] In some non-limiting examples, the protruding and / or overlapping second portion 10302 of the sedimentary layer 1030 is equal to the average thickness d of the first portion 10301 of the sedimentary layer 1030. a It may extend laterally over the patterned coating 210 to an equivalent extent. As a non-limiting example, the width w of the second portion 10302 is shown. b The average layer thickness d of the first part 10301 is a It may be equivalent to the following. In some non-restrictive examples, the width w of the second part 10302 b and the average layer thickness d of the first part 10301 a The ratio may be within the range of at least one of approximately 1:1 to 1:3, approximately 1:1 to 1:1.5, or approximately 1:1 to 1:2. Average layer thickness d a In some non-limiting examples, the first portion 10301 may be relatively uniform, but in some non-limiting examples, the second portion 10302 may protrude into and / or overlap the patterned coating 210 (i.e., w b ) may vary to some extent across different parts of the exposed layer surface 11.

[0527] Referring next to Figure 14B, the deposit layer 1030 may be shown to include a third portion 10303 positioned between the second portion 10302 and the patterned coating 210. As shown, the second portion 10302 of the deposit layer 1030 may extend laterally over the third portion 10303 of the deposit layer 1030, or be longitudinally separated from the third portion 10303, and the third portion may be in physical contact with the exposed layer surface 11 of the patterned coating 210. The average layer thickness d of the third portion 10303 of the deposit layer 1030 c The average layer thickness d of its first part 10301 a It may be smaller, and in some non-restrictive cases, it may be substantially smaller. In some non-restrictive cases, the width w of the third part 10303 c The width of the second part 10302 is w b It may exceed this. In some non-limiting examples, the third portion 10303 may extend laterally to overlap the patterned coating 210 more than the second portion 10302. In some non-limiting examples, the width w of the third portion 10303 may be greater than the width w of the third portion 10303. c and the average layer thickness d of the first part 10301 a The ratio may be within the range of at least one of approximately 1:2 to 3:1, or approximately 1:1.2 to 2.5:1. Average layer thickness d a In some non-limiting examples, the first portion 10301 may be relatively uniform, but in some non-limiting examples, the third portion 10303 may protrude into and / or overlap the patterned coating 210 (i.e., w c ) may vary to some extent across different parts of the exposed layer surface 11.

[0528] In some non-limiting examples, the average layer thickness d of the third part 10303 c The average layer thickness d of the first part 10301 is a It does not have to exceed approximately 5%. As a non-restrictive example, d c is, d aIt may be at least one of approximately 4%, approximately 3%, approximately 2%, approximately 1%, or approximately 0.5%. Instead of the third portion 10303 being formed as a thin film, and / or in addition thereto, as shown, the deposited material 1231 of the deposited layer 1030 may be formed as a particulate structure 121 on a portion of the patterned coating 210. As a non-limiting example, such particulate structures 121 may include features that are physically separated from each other so as not to form a continuous layer.

[0529] Referring here to Figure 14C, the NPC1420 may be placed between the substrate 10 and the deposited layer 1030. The NPC1420 may be placed between a first portion 10301 of the deposited layer 1030 and a second portion 402 of the substrate 10. The NPC1420 is shown as being placed on the second portion 402 rather than on the first portion 401 on which the patterned coating 210 is deposited. The NPC1420 may be formed such that at the interface and / or boundary between the NPC1420 and the deposited layer 1030, the surface of the NPC1420 may exhibit a relatively high initial adhesion probability for the deposition of the deposited material 1231. Thus, the presence of the NPC1420 may promote the formation and / or growth of the deposited layer 1030 during deposition.

[0530] Referring next to Figure 14D, the NPC1420 may be placed on both the first portion 401 and the second portion 402 of the substrate 10, and the patterned coating 210 may cover a portion of the NPC1420 placed on the first portion 401. Another portion of the NPC1420 may substantially lack the patterned coating 210, and the deposited layer 1030 may cover such portion of the NPC1420.

[0531] Referring next to Figure 14E, the deposited layer 1030 may be shown to partially overlap a portion of the patterned coating 210 in a third portion 1403 of the substrate 10. In some non-limiting examples, in addition to the first portion 10301 and the second portion 10302, the deposited layer 1030 may further include a fourth portion 10304. As shown, the fourth portion 10304 of the deposited layer 1030 may be located between the first portion 10301 and the second portion 10302 of the deposited layer 1030, and the fourth portion 10304 may be in physical contact with the exposed layer surface 11 of the patterned coating 210. In some non-limiting examples, the overlap in the third portion 1403 may be formed as a result of lateral growth of the deposited layer 1030 during an open mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 210 may exhibit a relatively low initial adhesion probability for the deposition of the deposited material 1231, and therefore the probability of material nucleation on the exposed layer surface 11 may be low. However, as the thickness of the deposited layer 1030 grows, the deposited layer 1030 may also grow laterally, covering a subset of the patterned coating 210 as shown in the figure.

[0532] Referring here to Figure 14F, the first portion 401 of the substrate 10 may be coated with the patterned coating 210, and the adjacent second portion 402 may be coated with the deposited layer 1030. In some non-limiting examples, it has been observed that by performing open-mask deposition and / or mask-free deposition of the deposited layer 1030, the deposited layer 1030 may exhibit a tapered cross-sectional profile at and / or near the interface between the deposited layer 1030 and the patterned coating 210.

[0533] In some non-limiting examples, the average thickness of the deposited layer 1030 at and / or near the interface may be less than the average thickness d3 of the deposited layer 1030. Such a tapered profile may be shown as curved and / or arched, but in some non-limiting examples, the profile may be substantially linear and / or nonlinear. In some non-limiting examples, the average thickness d3 of the deposited layer 1030 may decrease substantially linearly, exponentially, and / or quadratically in the region adjacent to the interface, but is not limited to these.

[0534] The contact angle θ of the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210. c It has been observed that this can vary depending on the characteristics of the patterned coating 210, such as the relative initial adhesion probability. The contact angle θ of the nucleus c It can be further assumed that, in some non-limiting cases, the thin film contact angle of the deposited layer 1030 formed by deposition can be determined. Referring to Figure 14F as a non-limiting example, the contact angle θ c This can be determined by measuring the inclination of the tangent to the deposited layer 1030 at and / or near the interface between the deposited layer 1030 and the patterned coating 210. In some non-limiting examples, if the cross-sectional tapered profile of the deposited layer 1030 can be substantially linear, the contact angle θ c This can be determined by measuring the inclination of the depositional layer 1030 at and / or near the interface. As will be understood by those skilled in the art, the contact angle θ c This can generally be measured with respect to the angle of the underlying layer. For the sake of simplicity in this disclosure, the patterned coating 210 and the deposited layer 1030 may be shown as deposited on a flat surface. However, those skilled in the art will understand that the patterned coating 210 and the deposited layer 1030 may also be deposited on a non-planar surface.

[0535] In some non-limiting examples, the contact angle θ of the sedimentary layer 1030 cThe contact angle θ may exceed approximately 90°. Referring here to Figure 14G, as a non-limiting example, the deposited layer 1030 may be shown as including a portion extending beyond the interface between the patterned coating 210 and the deposited layer 1030, and may be separated from the patterned coating 210 by a gap 1429. In such a non-limiting scenario, the contact angle θ c In some non-restrictive cases, this may exceed 90°.

[0536] In some non-restrictive cases, a relatively high contact angle θ c It may be advantageous to form a deposit layer 1030 exhibiting the following characteristics. As a non-limiting example, the contact angle θ c The contact angle θ may exceed at least one of approximately 10°, 15°, 20°, 25°, 30°, 35°, 40°, 50°, 70°, 75°, or 80°. As a non-limiting example, a relatively high contact angle θ c The sedimentary layer 1030 having this feature can enable the creation of finely patterned features while maintaining a relatively high aspect ratio. As a non-limiting example, a contact angle θ greater than approximately 90° c The purpose may also be to form a deposit layer 1030 that exhibits the following: c It may exceed at least one of approximately 90°, approximately 95°, approximately 100°, approximately 105°, approximately 110°, approximately 120°, approximately 130°, approximately 135°, approximately 140°, approximately 145°, approximately 150°, or approximately 170°.

[0537] Referring here to Figures 14H and 14I, the deposited layer 1030 may partially overlap a portion of the patterned coating 210 in a third portion 1403 of the substrate 10, which may be located between its first portion 401 and second portion 402. As shown, the subset of the deposited layer 1030 that partially overlaps a subset of the patterned coating 210 may be in physical contact with its exposed layer surface 11. In some non-limiting examples, the overlap in the third portion 1403 may be formed due to lateral growth of the deposited layer 1030 during an open-mask and / or mask-free deposition process. In some non-limiting examples, the exposed layer surface 11 of the patterned coating 210 may exhibit a relatively low initial adhesion probability for the deposition of the deposited material 1231, and therefore the probability of material nucleation on the exposed layer surface 11 can be low; however, as the thickness of the deposited layer 1030 grows, the deposited layer 1030 may also grow laterally and cover a subset of the patterned coating 210.

[0538] In Figures 14H and 14I, the contact angle θ of the sedimentary layer 1030 c This can be measured at its edge near the interface between it and the patterned coating 210, as shown. In Figure 14I, the contact angle ...

Claims

1. An electronic device comprising a plurality of layers deposited on a substrate, extending in the lateral direction of the electronic device defined by the transverse axis of the electronic device, and comprising a display panel. The aforementioned display panel is At least one signal-exchange display portion, the at least one signal-exchange display portion is A plurality of radiation regions, each of which includes an electrode layer containing a deposited material, each of which is configured to emit light of the visible spectrum, and each of which includes a plurality of radiation regions corresponding to (sub) pixels of the display panel, At least one transmission region located between a plurality of adjacent radiation regions in the lateral direction and A signal-switching display section comprising, At least one electromagnetic (EM) radiation absorbing layer deposited on the first layer surface of the at least one transmission region, wherein the at least one electromagnetic (EM) radiation absorbing layer includes at least one discontinuous layer of particle structure containing the deposited material and An electronic device equipped with the following features.

2. The electronic device according to claim 1, wherein the at least one particle structure of the at least one EM radiation absorbing layer facilitates the absorption of EM radiation in at least a portion of at least one of the visible spectrum and the ultraviolet (UV) spectrum, while substantially allowing the transmission of EM radiation in at least a portion of at least one of the infrared (IR) spectrum and the near-infrared (NIR) spectrum.

3. The electronic device according to claim 1, wherein the at least one particle structure has a feature selected from at least one of size, size distribution, shape, surface coverage, composition, deposition density, and composition.

4. The electronic device according to claim 1, wherein the at least one particle structure has a coverage rate of one of the following: about 10% to about 50%, about 10% to about 45%, about 12% to about 40%, about 15% to about 40%, about 15% to about 35%, about 18% to about 35%, about 20% to about 35%, and about 20% to about 30%.

5. The electronic device according to claim 1, wherein the at least one particle structure has one maximum size among about 40 nm or less, about 35 nm or less, about 30 nm or less, about 25 nm or less, and about 20 nm or less.

6. The electronic device according to claim 1, wherein the at least one particle structure has a size that is at least one of the mean and median values ​​that are one of the following: about 5 nm to about 40 nm, about 5 nm to about 30 nm, about 8 nm to about 30 nm, about 10 nm to about 30 nm, about 8 nm to about 25 nm, about 10 nm to about 25 nm, about 8 nm to about 20 nm, about 10 nm to about 20 nm, about 10 nm to about 15 nm, and about 8 nm to about 15 nm.

7. The electronic device according to claim 1, wherein the boundary of the at least one transparent region includes at least one of a nonlinear segment and a curved segment.

8. The electronic device according to claim 1, wherein the display panel includes a display portion, the display portion includes a plurality of radiating regions, each of the plurality of radiating regions corresponds to a (sub)pixel of the display panel.

9. The electronic device according to claim 8, wherein the plurality of radiating regions of the at least one signal-exchanging display portion and the plurality of radiating regions of the display portion are configured such that at least one of the aperture ratio and pixel density is substantially the same between the at least one signal-exchanging display portion and the display portion.

10. The electronic device according to any one of claims 1 to 9, wherein the electronic device comprises at least one under-display component (UDC), the at least one UDC being positioned behind the at least one signal-exchanging display portion, and the at least one UDC being adapted to at least one emission and reception of at least one EM signal in at least one portion of the IR spectrum and NIR spectrum transmitted through the at least one transmission region.

11. The electronic device according to claim 10, wherein the electronic device is adapted to allow at least one of the emission and reception of the at least one EM signal by the at least one UDC to pass through the at least one transmission region.

12. The electronic device according to claim 11, wherein at least one of the at least one of the emission and reception of the EM signal facilitates biometric authentication of the user.

13. The electronic device according to claim 10, wherein the first UDC of the at least one UDC is an IR emitter, and the second UDC of the at least one UDC is an IR detector.

14. The electronic device according to claim 13, wherein the IR emitter emits a first EM signal, and the IR detector detects a second EM signal which is a reflection of the first EM signal.

15. The electronic device according to claim 10, wherein each UDC is located behind the corresponding signal-switched display portion.

16. The electronic device according to any one of claims 1 to 9, wherein the deposited material includes a metal.

17. The electronic device according to any one of claims 1 to 9, wherein the deposited material comprises at least one of magnesium, silver, and ytterbium.

18. The electronic device according to any one of claims 1 to 9, wherein the deposited material is co-deposited with a co-deposited dielectric material.

19. The electronic device according to any one of claims 1 to 9, wherein the at least one particle structure includes a seed, and the deposited material coalesces around the seed.

20. The electronic device according to any one of claims 1 to 9, wherein the electronic device comprises a patterning coating disposed on the second layer surface of the display panel, and the exposed surface of the patterning coating provides the first layer surface.

21. The electronic device according to claim 20, wherein the patterning coating is adapted to influence the tendency of evaporated flux of the deposit material to deposit on the patterning coating such that the patterning coating substantially lacks a closed coating of the deposit material.

22. The electronic device according to claim 20, wherein the patterning coating comprises a first patterning material having a first initial adhesion probability that resists the deposition of the deposited material, and a second material having a second initial adhesion probability that resists the deposition of the deposited material, wherein the first initial adhesion probability is substantially less than or equal to the second initial adhesion probability.

23. The electronic device according to claim 22, wherein the first patterning material is a nucleation-suppressing coating (NIC) material.

24. The electronic device according to claim 22, wherein the second material is selected from at least one of electron transport layer (ETL) material, Liq, and lithium fluoride (LiF).

25. Each radiation region comprises a first electrode, a second electrode, and at least one semiconductor layer disposed between the first electrode and the second electrode, The first electrode is disposed between the substrate and the at least one semiconductor layer. The second electrode includes the electrode layer, The electronic device according to any one of claims 1 to 9, wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode.

26. The electronic device according to claim 25, wherein the second electrode includes a closed coating of the deposited material.

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