Semiconductor light-emitting device and method for manufacturing a semiconductor light-emitting device

Abstract

To provide a semiconductor light emitting device and the like that can suppress liquid solder from protruding from the longitudinal side surfaces of a semiconductor laser bar.SOLUTION: A semiconductor light emitting device includes a base 2 having a wiring member 10, a semiconductor laser bar 3, and a solder 4 placed between the wiring member 10 and the semiconductor laser bar 3. The surface of the wiring member 10 on the semiconductor laser bar 3 side includes a connection region 10a that is an interface with the solder 4, and a block region 10b whose contact angle with respect to the solder 4 is larger than 90 degrees. The connection region 10a is located inside a side surface S3 of the semiconductor laser bar 3 in the longitudinal direction in a top view. At least a part of the block region 10b is located between the connection region 10a and the side surface S3 in the top view. The inner part of the block region 10b in the longitudinal direction is located inside the side surface S3. The solder 4 includes a rear side extending portion 4a extending outward from a rear end surface S2 in the top view, and does not extend outward from the pair of side surfaces S3.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This disclosure relates to a semiconductor light-emitting device equipped with a semiconductor laser bar, a base to which the semiconductor laser bar and the like are joined, a soldered base to which the semiconductor laser bar and the like are joined, and a method for manufacturing a semiconductor light-emitting device equipped with a semiconductor laser bar. [Background technology]

[0002] Semiconductor laser elements are used as light sources in a wide variety of products, both in the consumer and industrial sectors. For example, semiconductor laser elements are used as light sources for image display devices such as displays and projectors, light sources for automobile headlamps, and light sources for industrial equipment such as laser processing machines.

[0003] In particular, semiconductor laser elements used as light sources for projectors or laser processing devices are required to have significantly higher output, exceeding 1 watt. In this case, if high-power laser light is emitted from a single emitter (light-emitting part), the light density at the front end surface from which the laser light is emitted becomes too high, which may cause COD (Catastrophic Optical Damage) at the front end surface.

[0004] Therefore, in order to emit laser light at high power from a single semiconductor laser element, a semiconductor laser element with a multi-emitter structure having multiple emitters has been proposed. This type of semiconductor laser element is configured, for example, as a long semiconductor laser bar having multiple gain regions corresponding to multiple emitters (for example, Patent Document 1).

[0005] The semiconductor laser bar is mounted to a mounting member such as a heat sink or cooling device via a base such as a submount. This reduces the stress on the semiconductor laser bar caused by the difference in thermal expansion between the semiconductor laser bar and the mounting member. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2005-158945 [Overview of the project] [Problems that the invention aims to solve]

[0007] A semiconductor laser bar is joined to a base such as a submount by solder. For example, a semiconductor laser bar is joined to a base using a junction-down method. When joining a semiconductor laser bar to a base by solder, it is possible to use a soldered base, which has solder already formed on it, to join the semiconductor laser bar to the base. Specifically, the semiconductor laser bar is placed on the soldered base, and the soldered base is heated while the semiconductor laser bar is pressed down, melting the solder and joining the semiconductor laser bar and the base with solder.

[0008] At this time, the solder, which has melted into a liquid state due to heating, is pressed down by the semiconductor laser bar, which can cause the liquid solder to spill out from its designated position on the base. Specifically, solder may spill out from between the semiconductor laser bar and the base.

[0009] For example, molten solder, when pressed down by the semiconductor laser bar, may flow in the short-side direction of the semiconductor laser bar and overflow from the front end face of the semiconductor laser bar. If solder overflows from the front end face (light-emitting end face) of the semiconductor laser bar, there is a risk that the solder will ride up onto the front end face and obstruct the optical path. Therefore, to prevent solder from adhering to the front end face of the semiconductor laser bar, it is conceivable to position the semiconductor laser bar on the base so that the front end face slightly overflows from the base. This prevents molten solder from flowing in the short-side direction of the semiconductor laser bar and overflowing from between the base and the semiconductor laser bar, thus preventing it from riding up onto the front end face of the semiconductor laser bar and obstructing the optical path. Furthermore, since the front end face and the rear end face on the opposite side form a dielectric reflective film that constitutes the resonator, there is no risk of short-circuiting and leakage occurring at the pn junction even if solder overflows.

[0010] Furthermore, solder pressed down by a semiconductor laser bar can flow along the longitudinal direction of the laser bar and spill out from its sides. Since a coating is not normally formed on the longitudinal sides of a semiconductor laser bar, if solder spills out from the sides, it can adhere to those sides and potentially short-circuit the pn junction of the semiconductor laser bar. Therefore, to prevent solder from adhering to the longitudinal sides of the semiconductor laser bar, a technique is known in which inactive regions without gain regions are provided at each of the longitudinal ends of the semiconductor laser bar, and solder is not formed in these inactive regions.

[0011] However, if we want to reliably prevent solder from overflowing from the sides of the semiconductor laser bar by forming inactive regions at both ends along its longitudinal direction, the length of the inactive region must be considerably longer. As a result, the longitudinal length of the semiconductor laser bar increases, and the overall size of the semiconductor light-emitting device equipped with the semiconductor laser bar mounted on the base becomes larger. On the other hand, if the length of the inactive region is made too short, solder will overflow from the sides of the semiconductor laser bar, and ultimately, there is a risk that solder will adhere to the sides of the semiconductor laser bar and short-circuit the pn junction.

[0012] Thus, it is difficult to prevent solder from overflowing from the longitudinal side of the semiconductor laser bar without lengthening the inactive region.

[0013] This disclosure aims to solve these problems and to provide a semiconductor light-emitting device, a base, a soldered base, and a method for manufacturing a semiconductor light-emitting device that can suppress liquid solder from overflowing from the longitudinal side of the semiconductor laser bar when bonding the semiconductor laser bar to the base. [Means for solving the problem]

[0014] To solve the above problems, one embodiment of a semiconductor light-emitting apparatus according to the present disclosure comprises a base having a wiring member, an end-face emitting type semiconductor laser bar having a plurality of gain regions arranged along the longitudinal direction, and solder disposed between the wiring member and the semiconductor laser bar, wherein the semiconductor laser bar has a front end face which is the end face from which light is emitted, a rear end face which is the end face opposite to the front end face, and a side face which is the end face in the longitudinal direction, and the semiconductor laser bar is connected to the base in a junction-down manner, and the semiconductor of the wiring member The laser bar side surface includes a connection region which is the interface with the solder and a block region which has a contact angle greater than 90 degrees with respect to the solder. In a top view, the connection region is located inside the side surface in the longitudinal direction, and at least a portion of the block region is located between the connection region and the side surface in a top view. The inner portion of the block region in the longitudinal direction is located inside the side surface, and the solder has a rear extension that extends outward from the rear end surface in a top view, and does not extend outward from the side surface.

[0015] Furthermore, one embodiment of the base according to the present disclosure is a rectangular parallelepiped base having a wiring member, wherein the upper surface of the wiring member includes a connection region and a block region, the block region being located outside the connection region in the longitudinal direction when viewed from above, the connection region having a contact angle with respect to solder less than 90 degrees, and the block region having a contact angle with respect to solder greater than 90 degrees.

[0016] Furthermore, one embodiment of a soldered base according to the present disclosure comprises a rectangular parallelepiped base having a wiring member, and solder disposed on the upper surface of the wiring member, wherein the upper surface of the wiring member includes a connection region which is the interface with the solder and has a contact angle with respect to the solder that is less than 90 degrees, and a block region which has a contact angle with respect to the solder that is greater than 90 degrees, and the block region is located on both outer sides of the connection region in the longitudinal direction when viewed from above.

[0017] Furthermore, one embodiment of the method for manufacturing a semiconductor light-emitting device according to the present disclosure includes a first step of preparing a base having a wiring member, a second step of placing solder on the wiring member, and a third step of placing an end-face emitting type semiconductor laser bar on the solder in a junction-down position, heating the semiconductor laser bar while pressing it down to melt the solder, and joining the semiconductor laser bar to the base with the solder, wherein the semiconductor laser bar has a plurality of gain regions arranged along its longitudinal direction, and the semiconductor laser bar has a front end face which emits light and an end face opposite the front end face. The wiring member has a rear end face which is the side end face and a side face which is the longitudinal end face, and in the first step, the wiring member is formed by sequentially forming the first connecting member and the block member, the upper surface of the wiring member includes a connection region where the contact angle with respect to the solder is less than 90 degrees and a block region located on both outer sides of the connection region in the longitudinal direction and where the contact angle with respect to the solder is greater than 90 degrees, in the second step, the solder is placed on the connection region, and in the third step, the solder extends outward from the rear end face and does not extend outward from the side face.

[0018] Another aspect of the method for manufacturing a semiconductor light-emitting device according to the present disclosure includes a first step of preparing a base having a wiring member, a second step of disposing solder on the wiring member, and a third step of disposing an edge-emitting semiconductor laser bar on the solder in a junction-down manner, heating the semiconductor laser bar while pressing it to melt the solder, and joining the semiconductor laser bar to the base by the solder. The semiconductor laser bar has a plurality of gain regions arranged along the longitudinal direction. The semiconductor laser bar has a front end face which is an end face for emitting light, a rear end face which is an end face opposite to the front end face, and side faces which are end faces in the longitudinal direction. In the first step, the wiring member is formed by sequentially forming a block member and a second connection member. On the upper surface of the wiring member, there are included a connection region where the contact angle with respect to the solder is less than 90 degrees, and block regions located on both outer sides of the connection region in the longitudinal direction and having a contact angle with respect to the solder greater than 90 degrees. In the second step, the solder is disposed on the connection region. In the third step, the solder extends outward from the rear end face and does not extend outward from the side faces. At least a part of the second connection member and the solder are integrated via a composition transition region.

Advantages of the Invention

[0019] According to the present disclosure, it is possible to suppress the solder from protruding from the side faces in the longitudinal direction of the semiconductor laser bar, so that it is possible to suppress the occurrence of leakage on the side faces of the semiconductor laser bar.

Brief Description of the Drawings

[0020] [Figure 1] FIG. 1 is a top view of a semiconductor light-emitting device according to Embodiment 1. [Figure 2] FIG. 2 is a front view of a semiconductor light-emitting device according to Mounting Embodiment 1. [Figure 3A] FIG. 3A is a cross-sectional view of a semiconductor light-emitting device according to Embodiment 1 taken along line IIIA-IIIA in FIG. 1. [Figure 3B]Figure 3B is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 1 along the line IIIB-IIIB in Figure 1. [Figure 3C] Figure 3C is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 1 along the line IIIC-IIIC in Figure 1. [Figure 4] Figure 4 shows the configuration of the base according to Embodiment 1 before the semiconductor laser bar is bonded. [Figure 5] Figure 5 is an enlarged cross-sectional view of a semiconductor light-emitting device according to Embodiment 1. [Figure 6] Figure 6 shows the configuration of the soldered base according to Embodiment 1. [Figure 7] Figure 7 is a diagram illustrating the method for manufacturing a soldered base according to Embodiment 1. [Figure 8] Figure 8 is a diagram illustrating a method for mounting a semiconductor laser bar onto a soldered base according to Embodiment 1. [Figure 9] Figure 9 is a diagram illustrating an application example when mounting a semiconductor laser bar on a soldered base according to Embodiment 1. [Figure 10A] Figure 10A is a top view of a semiconductor light-emitting device according to a modified example 1 of Embodiment 1. [Figure 10B] Figure 10B is a cross-sectional view of a semiconductor light-emitting device according to Modification 1 of Embodiment 1 in the XB-XB region of Figure 10A. [Figure 10C] Figure 10C is a cross-sectional view of a semiconductor light-emitting device according to a modified example 1 of Embodiment 1, along the XC-XC line in Figure 10A. [Figure 10D] Figure 10D is a cross-sectional view of a semiconductor light-emitting device according to a modified example 1 of Embodiment 1, along the line XD-XD in Figure 10A. [Figure 11] Figure 11 is a cross-sectional view showing another example of a semiconductor light-emitting device according to a modified example 1 of Embodiment 1. [Figure 12] Figure 12 shows the configuration of a semiconductor light-emitting device and a base for mounting a semiconductor laser bar according to a modified example 2 of Embodiment 1. [Figure 13]Figure 13 shows the configuration of a soldered base according to a modified example 2 of Embodiment 1. [Figure 14] Figure 14 shows a configuration of a semiconductor light-emitting device, a base for mounting a semiconductor laser bar, and a semiconductor laser bar, according to a modification 3 of Embodiment 1. [Figure 15] Figure 15 shows the configuration of a semiconductor light-emitting device and a base for mounting a semiconductor laser bar according to a modified example 4 of Embodiment 1. [Figure 16] Figure 16 is a cross-sectional view of a semiconductor light-emitting device according to a modified example 5 of Embodiment 1. [Figure 17] Figure 17 is a cross-sectional view of another semiconductor light-emitting device according to a modified example 5 of Embodiment 1. [Figure 18] Figure 18 is a top view of a semiconductor light-emitting device according to Embodiment 2. [Figure 19] Figure 19 is a front view of a semiconductor light-emitting device according to implementation form 2. [Figure 20A] Figure 20A is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 2 along the line XXA-XXA in Figure 18. [Figure 20B] Figure 20B is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 2 along the line XXB-XXB in Figure 18. [Figure 20C] Figure 20C is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 2 along the XXC-XXC line in Figure 18. [Figure 21] Figure 21 shows the configuration of the base according to Embodiment 2 before the semiconductor laser bar is bonded. [Figure 22] Figure 22 is an enlarged cross-sectional view of a semiconductor light-emitting device according to Embodiment 2. [Figure 23] Figure 23 shows the configuration of the soldered base according to Embodiment 2. [Figure 24] Figure 24 is a diagram illustrating a method for manufacturing a soldered base according to Embodiment 2. [Figure 25] Figure 25 is a diagram illustrating a method for mounting a semiconductor laser bar on a soldered base according to Embodiment 2. [Figure 26A] Figure 26A is a top view of a semiconductor light-emitting device according to a modified example 1 of Embodiment 2. [Figure 26B] Figure 26B is a cross-sectional view of a semiconductor light-emitting device according to Modification 1 of Embodiment 2 in the line XXVIB-XXVIB of Figure 26A. [Figure 26C] Figure 26C is a cross-sectional view of a semiconductor light-emitting device according to Modification 1 of Embodiment 2 in the line XXVIC-XXVIC of Figure 26A. [Figure 26D] Figure 26D is a cross-sectional view of a semiconductor light-emitting device according to Modification 1 of Embodiment 2 in the XXVID-XXVID line of Figure 26A. [Figure 27] Figure 27 shows the configuration of a semiconductor light-emitting device and a base for mounting a semiconductor laser bar according to a modified example 2 of Embodiment 2. [Figure 28] Figure 28 is a top view of a semiconductor light-emitting device according to Embodiment 3. [Figure 29] Figure 29 is a front view of a semiconductor light-emitting device according to implementation form 3. [Figure 30A] Figure 30A is a cross-sectional view of the semiconductor light-emitting device according to Embodiment 3 along the line XXXA-XXXA in Figure 28. [Figure 30B] Figure 30B is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 3 along the line XXXB-XXXB in Figure 28. [Figure 30C] Figure 30C is a cross-sectional view of the semiconductor light-emitting apparatus according to Embodiment 3 along the line XXXC-XXXC in Figure 28. [Figure 31] Figure 31 shows the configuration of the base according to Embodiment 3 before the semiconductor laser bar is bonded. [Figure 32] Figure 32 is an enlarged cross-sectional view of a semiconductor light-emitting device according to Embodiment 3. [Figure 33] Figure 33 shows the configuration of the soldered base according to Embodiment 3. [Figure 34] Figure 34 is a diagram illustrating a method for manufacturing a soldered base according to Embodiment 3. [Figure 35]Figure 35 is a diagram illustrating a method for mounting a semiconductor laser bar on a soldered base according to Embodiment 3. [Figure 36A] Figure 36A is a top view of a semiconductor light-emitting device according to a modified example of Embodiment 3. [Figure 36B] Figure 36B is a cross-sectional view of a semiconductor light-emitting device according to a modified example of Embodiment 3 along the line XXXVIB-XXXVIB in Figure 36A. [Figure 36C] Figure 36C is a cross-sectional view of a semiconductor light-emitting device according to a modified example of Embodiment 3 along the line XXXVIC-XXXVIC in Figure 36A. [Figure 36D] Figure 36D is a cross-sectional view of a semiconductor light-emitting device according to a modified example of Embodiment 3 along the line XXXVID-XXXVID in Figure 36A. [Figure 37] Figure 37 is an enlarged cross-sectional view of a semiconductor light-emitting device according to a modified example of Embodiment 3. [Figure 38] Figure 38 is a top view of a semiconductor light-emitting device according to Modification 1. [Figure 39] Figure 39 is a cross-sectional view of a semiconductor light-emitting device according to Modification 1. [Figure 40] Figure 40 is a top view of the base according to Modification 1. [Figure 41] Figure 41 shows a top view of the soldered base and a top view of the semiconductor light-emitting device according to Modification 2. [Figure 42] Figure 42 shows a top view of the soldered base and a top view of the semiconductor light-emitting device according to Modification 3. [Figure 43] Figure 43 is a cross-sectional view of a semiconductor light-emitting device according to Modification 4. [Modes for carrying out the invention]

[0021] The embodiments of this disclosure will be described below with reference to the drawings. The embodiments described below are all specific examples of this disclosure. Therefore, the numerical values, shapes, materials, components, arrangement and connection configurations of components, as well as the steps (processes) and their order, shown in the following embodiments are examples and are not intended to limit this disclosure. Accordingly, any components in the following embodiments that are not described in the independent claims representing the highest-level concepts of this disclosure will be described as optional components.

[0022] Furthermore, each figure is a schematic diagram and not necessarily a strictly accurate representation. Therefore, the scale and angles may not always be consistent across all figures, and angles may not be accurately depicted. In each figure, substantially identical components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0023] Furthermore, in this specification, the terms "upper" and "lower" do not refer to the upward (vertically upward) and downward (vertically downward) directions in absolute spatial perception, but rather are used as terms defined by the relative positional relationship based on the stacking order in a stacked configuration. Moreover, the terms "upper" and "lower" apply not only when two components are spaced apart and another component exists between them, but also when two components are placed in contact with each other.

[0024] (Embodiment 1) [Semiconductor light-emitting device] First, the configuration of the semiconductor light-emitting device 1 according to Embodiment 1 will be described using Figures 1, 2, 3A, 3B, and 3C. Figure 1 is a top view of the semiconductor light-emitting device 1 according to Embodiment 1. Figure 2 is a front view of the semiconductor light-emitting device 1 according to Mounting Form 1. Figures 3A, 3B, and 3C are cross-sectional views of the semiconductor light-emitting device 1 according to Embodiment 1 along lines IIIA-IIIA, IIIB-IIIB, and IIIC-IIIC in Figure 1, respectively.

[0025] As shown in Figures 1 and 2, the semiconductor light-emitting device 1 comprises a base 2 having a wiring member 10, a semiconductor laser bar 3, and solder 4. The base 2 and the semiconductor laser bar 3 are joined via solder 4. Specifically, the solder 4 is interposed between the base 2 and the semiconductor laser bar 3. In other words, the solder 4 is placed on the base 2, and the semiconductor laser bar 3 is placed on top of the solder 4. Specifically, the solder 4 is placed on the wiring member 10 of the base 2. Therefore, the solder 4 is placed between the wiring member 10 and the semiconductor laser bar 3.

[0026] Solder 4 is an example of a joining member for joining the base 2 and the semiconductor laser bar 3. In this embodiment, solder 4 joins the wiring member 10 of the base 2 to the semiconductor laser bar 3. This electrically connects the wiring member 10 and the semiconductor laser bar 3.

[0027] Solder 4 is, for example, an AuSn-based or SnAuCu-based lead-free solder, but is not limited to these. Solder 4 may also be a lead-based solder using lead (Pb). Furthermore, solder 4 may be a high-temperature solder or a low-temperature solder. In this embodiment, solder 4 is AuSn solder. Specifically, AuSn eutectic solder was used as solder 4.

[0028] The semiconductor laser bar 3 is an example of a long semiconductor laser element that emits laser light. In this embodiment, the semiconductor laser bar 3 is an end-face emitting type semiconductor laser element having multiple gain regions arranged along the longitudinal direction of the semiconductor laser bar 3. Specifically, the semiconductor laser bar 3 is a multi-emitter semiconductor laser element having multiple emitters corresponding to multiple gain regions, and emits multiple laser beams.

[0029] The semiconductor laser bar 3 comprises a substrate and a semiconductor multilayer structure formed on the substrate. For example, the semiconductor laser bar 3 is a GaN-based semiconductor laser or a GaAs-based semiconductor laser. In this embodiment, the semiconductor laser bar 3 is a GaN-based semiconductor laser and comprises a GaN substrate which is a growth substrate and a semiconductor multilayer structure composed of nitride semiconductor material formed on the GaN substrate. Specifically, the semiconductor multilayer structure comprises an n-type semiconductor layer formed on the GaN substrate, an active layer formed on the n-type semiconductor layer, and a p-type semiconductor layer formed on the active layer. The active layer formed between the n-type semiconductor layer and the p-type semiconductor layer forms a pn junction.

[0030] As shown in Figure 2, the p-type semiconductor layer has, for example, multiple ridges 3a as multiple optical waveguides. The multiple ridges 3a (optical waveguides) correspond to multiple gain regions. The multiple ridges 3a are formed in parallel and extend in a direction perpendicular to the longitudinal direction of the semiconductor laser bar 3. The upper surface of the p-type semiconductor layer is covered with an insulating film 3b made of SiN or SiO2, except over the ridges 3a. That is, the insulating film 3b has an opening above the ridges 3a. In addition, a p-side electrode is formed on the p-type semiconductor layer, and an n-side electrode is formed on the back surface of the GaN substrate (the surface opposite to the surface on which the semiconductor stacked structure is formed). The p-side electrode is formed, for example, on the ridges 3a.

[0031] Furthermore, the semiconductor laser bar 3 has a pad electrode 5. The pad electrode 5 is formed on the p-side electrode of the semiconductor laser bar 3. The pad electrode 5 is formed in an elongated shape so as to span all the ridge portions 3a. The pad electrode 5 is made of a metallic material. The pad electrode 5 may be made of a single metal layer or of multiple metal layers. As an example, the pad electrode 5 has a three-layer structure in which a Ti layer, a Pt layer, and an Au layer are stacked in that order in the direction away from the p-side electrode.

[0032] As shown in Figure 1, the semiconductor laser bar 3 has a front end face S1 which emits laser light, a rear end face S2 which is the end face opposite to the front end face S1, and a pair of side faces S3 which are the longitudinal end faces of the semiconductor laser bar 3. The optical waveguide of the semiconductor laser bar 3 uses the front end face S1 and the rear end face S2 as resonator reflection mirrors. Therefore, the front end face S1 and the rear end face S2 become resonator end faces.

[0033] The semiconductor laser bar 3 is connected to the base 2 using a junction-down method (face-down method). In other words, the semiconductor laser bar 3 is mounted on the base 2 with the side facing the pad electrode 5 (the side facing the p-side electrode) facing the base 2.

[0034] Furthermore, as shown in Figures 1 and 3B, in this embodiment, the semiconductor laser bar 3 is mounted on the base 2 such that its front end face S1 slightly protrudes from the front end face of the base 2. As a result, when mounting the semiconductor laser bar 3 to the base 2, even if the solder 4 that has melted into liquid due to heating flows in the short direction of the semiconductor laser bar 3 and protrudes from between the base 2 and the semiconductor laser bar 3, the liquid solder 4 will remain on the base 2 side of the protruding portion of the semiconductor laser bar 3. Therefore, it is possible to suppress the liquid solder 4 from riding up onto the front end face S1 and adhering to the front end face S1 of the semiconductor laser bar 3, thereby preventing interference of the laser beam path at the front end face S1 by the solder 4.

[0035] The base 2 is a submount on which the semiconductor laser bar 3 is mounted. The base 2 is a rectangular parallelepiped as a whole. For example, the base 2 is a rectangular flat plate. As shown in Figures 1 to 3C, the base 2 has a wiring member 10 and a support 20.

[0036] The support 20 constitutes the main body of the base 2. The support 20 is an insulator and is made of a highly thermally conductive material such as AlN, SiC, or diamond. This allows the heat generated by the semiconductor laser bar 3 to be efficiently dissipated by the support 20. In other words, the support 20 functions as a heat sink. The shape of the support 20 is a rectangular parallelepiped, for example, a rectangular flat plate. Therefore, the top surface of the support 20 is a rectangular plane.

[0037] The wiring member 10 is formed above the support 20. Specifically, the wiring member 10 is formed on the upper surface of the support 20. At least a portion of the wiring member 10 is connected to the solder 4. In other words, the solder 4 is interposed between the wiring member 10 and the semiconductor laser bar 3.

[0038] The wiring member 10 has a wiring body 11 and a block member 12. In this embodiment, the wiring member 10 is constructed by forming the wiring body 11 and the block member 12 in that order.

[0039] The wiring body 11 may be composed of a single conductive layer or of multiple conductive layers. In this embodiment, the wiring body 11 is composed of multiple metal layers. Specifically, the wiring body 11 has a three-layer structure consisting of a first metal layer 11a, a second metal layer 11b formed on the first metal layer 11a, and a third metal layer 11c formed on the second metal layer 11b.

[0040] The first metal layer 11a is, for example, a Ti layer made of Ti or an Au layer made of Au. For example, the thickness of the first metal layer 11a is 0.5 μm. The first metal layer 11a functions as an adhesion layer formed to improve the adhesion between the support 20 and the wiring body 11. Therefore, the first metal layer 11a is preferably made of a metal material that has excellent adhesion to the support 20. The first metal layer 11a is the bottom layer of the wiring body 11.

[0041] The second metal layer 11b is, for example, a Pt layer made of Pt. As an example, the thickness of the second metal layer 11b is 0.2 μm. The second metal layer 11b functions as a barrier layer to suppress the diffusion of unwanted metals. In this embodiment, the second metal layer 11b suppresses the diffusion of Sn contained in the solder 4. The second metal layer 11b is an intermediate layer of the wiring body 11 and is positioned between the first metal layer 11a and the third metal layer 11c.

[0042] The third metal layer 11c is, for example, an Au layer made of Au. As an example, the thickness of the third metal layer 11c is 1.0 μm. The third metal layer 11c is the uppermost layer of the wiring body 11. As shown in Figure 3A, in this embodiment, the third metal layer 11c is not present in the lower part of the solder 4 in the wiring body 11.

[0043] As will be explained in more detail later, this is because, when the semiconductor laser bar 3 is joined to the wiring member 10 with solder 4, Sn, a component of the solder 4 made of AuSn, diffuses into the third metal layer 11c, which is an Au layer, and Au and Sn alloy together. As a compositional transition region, an alloyed layer 11c1 of the AuSn layer is formed, and the third metal layer 11c becomes part of the solder 4 and integrates with it. Therefore, after the semiconductor laser bar 3 and the base 2 are joined by solder 4, the solder 4, including the alloyed layer 11c1 in which the third metal layer 11c and the solder 4 are integrated, appears to be joined to the second metal layer 11b of the wiring body 11.

[0044] On the other hand, regarding the base 200, which is the base 2 before the semiconductor laser bar 3 is bonded to the wiring member 10, as shown in Figure 4, no compositional transition region (alloyed layer 11c1) is formed in the third metal layer 11c of the wiring body 211 of the wiring member 210, and the wiring body 211 of the wiring member 210 has a three-layer structure consisting of a first metal layer 11a, a second metal layer 11b, and a third metal layer 11c throughout its entire region. Figure 4 is a diagram showing the configuration of the base 200 before the semiconductor laser bar 3 is bonded to it. In Figure 4, (a) is a top view of the base 200, and (b) is a cross-sectional view along the line bb in (a).

[0045] In the base 2 and base 200, the first metal layer 11a, the second metal layer 11b, and the third metal layer 11c are, for example, plated films formed by a plating method, but are not limited to this. For example, the first metal layer 11a, the second metal layer 11b, and the third metal layer 11c may be formed by methods other than plating, such as vapor deposition. Also, in this embodiment, the wiring body 11 has a three-layer structure of Ti / Pt / Au or Au / Pt / Au from the support 20 side, but is not limited to this. For example, the wiring body 11 may have a five-layer structure of Ti / Pt / Au / Pt / Au from the support 20 side.

[0046] As shown in Figure 4(a), in the base 200, the wiring body 211 is separated into a first wiring body 111 and a second wiring body 112. The first wiring body 111 and the second wiring body 112 are wiring members connected to the front electrode and back electrode of the semiconductor laser bar 3. Furthermore, the first wiring Main unit 111 and the second wiring Main unit Each component is positioned so that it can be easily connected from 112 to the power supply unit by wire bonding or the like. For example, in Figure 4(a), the components are arranged so that the power supply unit is formed in the left-right direction when viewed from above. Of course, the first wiring is located on the rear end face S2 side (upper side when viewed from above). Main unit 111 and the second wiring Main unit It is also acceptable for 112 to be placed next to each other.

[0047] The wiring body 11 on the base 2 shown in Figure 1 has the same shape as the wiring body 211 on the base 200. In other words, the wiring body 11 is composed of a first wiring body 111 and a second wiring body 112 that are separated from each other.

[0048] As shown in Figure 1, the semiconductor laser bar 3 is positioned on the first wiring body 111. Therefore, as shown in Figure 3A, the semiconductor laser bar 3 and the first wiring body 111 are joined by solder 4. Also, as shown in Figure 1, the second wiring body 112 and the semiconductor laser bar 3 are connected by gold wire 6, which is an example of a wiring wire. Wire bonding is performed so as to correspond to the gain region (ridge portion) of the semiconductor laser bar 3. That is, the gold wire 6 is arranged parallel to the longitudinal direction of the semiconductor laser bar 3, corresponding to the gain regions aligned in the longitudinal direction of the semiconductor laser bar 3. By performing wire bonding in this manner, it is possible to make the semiconductor laser bar 3 emit light uniformly in the longitudinal direction. Furthermore, it is preferable that the gold wire 6 be positioned between adjacent gain regions. This reduces the occurrence of defects due to stress during wire bonding. In this embodiment, multiple gold wires 6 are wire-bonded to span the second wiring body 112 and the semiconductor laser bar 3, but this is not limited to this. For example, the gold wire 6 may be one or two, as long as uniform light emission can be obtained along the longitudinal direction of the semiconductor laser bar 3. Alternatively, a wiring wire made of a material other than gold may be used instead of the gold wire 6.

[0049] Power is supplied to the first wiring body 111 and the second wiring body 112. In this embodiment, a power supply wire 7a is wire-bonded to the first wiring body 111, and a power supply wire 7b is wire-bonded to the second wiring body 112. The power supplied to the power supply wire 7a is supplied to the pad electrode 5 (p-side electrode) of the semiconductor laser bar 3 via the first wiring body 111 and solder 4. On the other hand, the power supplied to the power supply wire 7b is supplied to the n-side electrode of the semiconductor laser bar 3 via the second wiring body 112 and gold wire 6. Here, the second wiring body 112 is positioned along the semiconductor laser bar 3 on the rear end face S2 side and spaced apart from the first wiring body 111 in order to shorten the length of the gold wire 6. On the other hand, considering the optical path of the laser beam, the gold wire 6 cannot be placed on the front end face S1 side, so the power supply wires 7a and 7b are formed near the longitudinal end of the base 200. Therefore, the second wiring body 112 is L-shaped and runs along the rear side and longitudinal end of the base 200. In this embodiment, multiple power supply wires are wire-bonded, but a single thick wire may be used, or a metal wiring component that is resistant to deformation may be soldered to it.

[0050] As shown in Figures 2 and 3A, the block members 12 are positioned on the wiring body 11. Specifically, the block members 12 are positioned on the third metal layer 11c of the wiring body 11. In this embodiment, a pair of block members 12 are formed so as to face each other in the longitudinal direction of the semiconductor laser bar 3. The pair of block members 12 are formed at positions that overlap with a pair of ends in the longitudinal direction of the semiconductor laser bar 3. Solder 4 is present between the pair of block members 12.

[0051] Each of the pair of block members 12 is positioned on the first wiring body 111. Each block member 12 is formed extending from one end to the other in the width direction of the first wiring body 111. In this embodiment, the top view shape of each block member 12 is rectangular. For example, the top view shape of a block member 12 is a rectangle with a length of 1.25 mm and a width of 0.3 mm. The thickness of the block member 12 is, for example, 0.2 μm.

[0052] The block member 12 is composed of a conductive layer. In this embodiment, the block member 12 is a metal layer. Specifically, the block member 12 is a Pt layer made of Pt. The block member 12, which is a Pt layer, is formed on the upper surface of the wiring body 11, for example, by a vapor deposition method. However, the method of forming the block member 12 is not limited to vapor deposition. Alternatively, the block member 12 may be a metal block, and the metal block member 12 may be joined to the wiring body 11 with a conductive adhesive or an insulating adhesive. In addition, the power supply wires 7a and 7b are arranged spaced apart on the outer longitudinal portion of the block member 12.

[0053] Thus, in this embodiment, both the wiring body 11 and the block member 12 are conductive, but are not limited to this. For example, the block member 12 may be made of an insulating material. Specifically, the block member 12 may be silicon oxide (SiO2). x It may be a silicon oxide film made of nickel oxide (NiO x It may also be a nickel oxide film made of ).

[0054] As shown in Figures 2 to 3C, the side of the wiring member 10 facing the semiconductor laser bar 3 includes a connection region 10a (connection portion) and a block region 10b (block portion). In other words, the upper surface of the wiring member 10 includes the connection region 10a and the block region 10b.

[0055] The connection region 10a of the wiring member 10 is the interface between the wiring member 10 and the solder 4. In a top view, the connection region 10a is located inside the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction of the semiconductor laser bar 3. Specifically, the connection region 10a is located between a pair of side surfaces S3 of the semiconductor laser bar 3.

[0056] As shown in Figure 3A, after the semiconductor laser bar 3 and the wiring member 10 are joined with solder 4, the interface between the wiring member 10 and the solder 4 becomes the connection surface between the second metal layer 11b of the wiring body 11 and the solder 4. In other words, the connection region 10a is a part of the upper surface of the second metal layer 11b. Specifically, since the second metal layer 11b is a Pt layer, the connection region 10a is the surface of Pt. Thus, in this embodiment, the second metal layer 11b of the wiring body 11 is connected to the solder 4. In other words, the second metal layer 11b is a connecting member (first connecting member) that connects to the solder 4.

[0057] Furthermore, regarding the base 200 before the semiconductor laser bar 3 is joined to the wiring member 10, as shown in Figure 4, the third metal layer 11c of the wiring body 211 of the wiring member 210 is present in the area where the solder 4 will be connected. Therefore, on the base 200, the connection area 10c where the solder 4 is to be connected is a part of the upper surface of the third metal layer 11c. In other words, on the base 200, the connection area 10c is the solder placement area where the solder 4 will be placed. In this case, the contact angle of the connection area 10c with respect to the solder 4 is less than 90 degrees. That is, the contact angle of the connection area 10c with respect to the liquid solder 4 is an acute angle less than 90 degrees. In this embodiment, since the third metal layer 11c is an Au layer, the connection area 10c on the base 200 is the surface of Au. Also, the block member 12 is made of Pt, SiO x or NiO x Since it is composed of Pt and SiO, the block region 10b is made of Pt and SiO x or NiO x This is the surface. This makes it easy to realize the difference in wettability between the connection region 10c and the block region 10b.

[0058] As shown in FIGS. 2 and 3A, a pair of block members 12 formed on the third metal layer 11c are located above the second metal layer 11b (the first connection member). That is, the upper surface of the second metal layer 11b not only contacts the solder 4 but also contacts the third metal layer 11c. Thus, the upper surface of the second metal layer 11b includes a connection region 10a connected to the solder 4 and a region connected to the third metal layer 11c.

[0059] Also, as described above, the solder 4 is formed between the pair of block members 12. Therefore, the second metal layer 11b (the first connection member) connected to the solder 4 has a connection region 10a between the pair of block members 12 in a top view. That is, the connection region 10a is located between the pair of block members 12.

[0060] The block region 10b of the wiring member 10 is located outside the connection region 10a in the longitudinal direction of the semiconductor laser bar 3 in a top view. Also, at least a part of the block region 10b is located between the connection region 10a and the side surface S3 of the semiconductor laser bar 3.

[0061] The contact angle of the block region 10b with respect to the solder 4 is greater than 90 degrees. That is, the contact angle of the block region 10b with respect to the liquid solder 4 is an obtuse angle greater than 90 degrees. In the present embodiment, the block region 10b is the upper surface of the block member 12. As described above, since the block member 12 is a Pt layer, the block region 10b is the surface of Pt. Note that when the block member 12 is composed of x SiO or NiO x When it is composed of, the block region 10b is the surface of x SiO or NiO x

[0062] In this embodiment, since the wiring member 10 has a pair of block members 12, there is also a pair of block regions 10b. One of the pair of block regions 10b is located on one side of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3. The other of the pair of block regions 10b is located on the other side of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3. In other words, there is a pair of block regions 10b located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0063] The side surface S3 of the semiconductor laser bar 3 is located above the block region 10b. In other words, the side surface S3 of the semiconductor laser bar 3 overlaps with the block region 10b in a top view. Specifically, one of the pair of side surfaces S3 of the semiconductor laser bar 3 is located above one of the pair of block regions 10b, and the other of the pair of side surfaces S3 of the semiconductor laser bar 3 is located above the other of the pair of block regions 10b.

[0064] In a top view, the inner portion of the block region 10b in the longitudinal direction of the semiconductor laser bar 3 is located inward from the side surface S3 of the semiconductor laser bar 3. Specifically, the inner side surface of the block member 12 in the longitudinal direction of the semiconductor laser bar 3 is located inward from the side surface S3 of the semiconductor laser bar 3.

[0065] In this embodiment, the opposing portions of the pair of block regions 10b are located between the pair of side surfaces S3 of the semiconductor laser bar 3. In other words, the opposing sides of the pair of block members 12 are located between the pair of side surfaces S3.

[0066] On the other hand, the outer portion of the block region 10b in the longitudinal direction of the semiconductor laser bar 3 is located outside the side surface S3 of the semiconductor laser bar 3 when viewed from above. Specifically, the outer side surface of the block member 12 in the longitudinal direction of the semiconductor laser bar 3 is located outside the side surface S3 of the semiconductor laser bar 3.

[0067] Furthermore, as shown in Figures 1 and 4, each of the pair of block regions 10b extends outward from the portion directly below the semiconductor laser bar 3 towards the rear end face S2 when viewed from above. Also, the ends of each side surface S3 of the semiconductor laser bar 3 towards the rear end face S2 overlap with the block region 10b when viewed from above.

[0068] The pair of block regions 10b are positioned towards one side of the base 2 in the short direction when viewed from above. In other words, the pair of block regions 10b are predominantly located on one side of the base 2 in the short direction. In this embodiment, the pair of block regions 10b are located above the first wiring body 111 and are positioned towards the front end face S1 side of the semiconductor laser bar 3 (the front side of the semiconductor light-emitting device 1).

[0069] As shown in Figures 2 and 3A, the solder 4 interposed between the wiring member 10 and the semiconductor laser bar 3 is located between a pair of block regions 10b (block members 12), and does not extend outward from the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction of the semiconductor laser bar 3. In other words, the solder 4 does not protrude outward from the side surface S3 of the semiconductor laser bar 3.

[0070] On the other hand, as shown in Figures 1, 3B, and 3C, the solder 4 interposed between the wiring member 10 and the semiconductor laser bar 3 protrudes outward from the rear end face S2 of the semiconductor laser bar 3 in the short-side direction of the semiconductor laser bar 3. Specifically, the solder 4 has a rear-side extension portion 4a that extends outward from the rear end face S2 of the semiconductor laser bar 3 when viewed from above.

[0071] Although not shown in the figures, the front end face S1 and rear end face S2 of the semiconductor laser bar 3 are covered with a film made of a dielectric material such as SiOx, AlOx, or TiOx. These films have a contact angle greater than 90 degrees with respect to various types of solder. Therefore, the rear extension portion 4a of the solder 4 protrudes outward from the rear end face S2 of the semiconductor laser bar 3, but does not come into contact with the rear end face S2. Also, as shown in Figure 1, the rear extension portion 4a of the solder 4 does not come into contact with the side surface S3 of the semiconductor laser bar 3.

[0072] As shown in Figure 1, the connection region 10a, which is the interface between the solder 4 and the wiring member 10, has a connection region extension portion 10a1 that extends outward from the rear end face S2 of the semiconductor laser bar 3 when viewed from above. As shown in Figure 3B, the rear extension portion 4a of the solder 4 is connected to the connection region extension portion 10a1 of the connection region 10a.

[0073] In this embodiment, the height of the rear extension portion 4a present in the connection region extension portion 10a1 is not constant. Specifically, as shown in Figure 3B, the height of the rear extension portion 4a increases and then decreases as it moves away from the semiconductor laser bar 3 in the short-side direction of the semiconductor laser bar 3.

[0074] As shown in Figure 3A, the solder 4 interposed between the wiring member 10 and the semiconductor laser bar 3 is located between a pair of block members 12, and a portion of it rests on the upper surface of the block members 12. Therefore, the solder 4 is interposed not only between the wiring body 11 and the semiconductor laser bar 3, but also between the block members 12 and the semiconductor laser bar 3. Consequently, in the cross-sectional view shown in Figure 3A, the width W1 of the interface between the solder 4 and the semiconductor laser bar 3 is greater than the width W2 of the interface between the solder 4 and the wiring member 10.

[0075] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, inactive regions without gain regions are provided at each of the longitudinal ends of the semiconductor laser bar 3. Although these inactive regions are composed of the same semiconductor stacked structure as the portion from which the laser light is emitted, they are insulated from the solder 4 by an insulating film, and no current flows through them. Therefore, there is no heat generation from the inactive regions, and there are few thermal problems even without a heat-conducting material such as solder 4 between them and the base 200 directly below. In the semiconductor laser bar 3 of this embodiment, the length of these inactive regions is shorter than in the conventional technology.

[0076] In this case, in the semiconductor light-emitting device 1 of this embodiment, the angle θ1 between the straight line connecting the outer lower end of the semiconductor laser bar 3 and the inner end of the block region 10b (the inner upper end of the block member 12) and the lower surface of the semiconductor laser bar 3, as seen in the cross-sectional view in Figure 5, is less than 45 degrees.

[0077] Furthermore, the angle θ2 between the straight line connecting the inner end of the lower surface of the block member 12 and the outer end of the gain region 3c closest to the block member 12 among the multiple gain regions 3c, and the lower surface of the semiconductor laser bar 3, is less than 45 degrees.

[0078] Next, a method for manufacturing the semiconductor light-emitting device 1 according to Embodiment 1 will be described. Specifically, a method for joining the semiconductor laser bar 3 and the wiring member 10 of the base 2 using solder 4 will be described.

[0079] In this embodiment, a semiconductor laser bar 3 is mounted using a soldered base 201 on which solder 4 is pre-formed on the support 20. First, the configuration of the soldered base 201 will be explained using Figure 6. Figure 6 is a diagram showing the configuration of the soldered base 201 according to Embodiment 1. In Figure 6, (a) is a top view of the soldered base 201, and (b) is a cross-sectional view along the line bb in (a).

[0080] As shown in Figure 6, the soldered base 201 has a configuration in which solder 4 is placed on the wiring member 210 of the base 200 shown in Figure 4. Specifically, the soldered base 201 comprises a rectangular support 20 (base) having the wiring member 210, and solder 4, which is a solder layer, placed on the upper surface of the wiring member 210. The solder 4 can be formed into a predetermined shape by vapor deposition or printing.

[0081] The wiring member 210 comprises a wiring body 211 and a block member 12. The wiring body 211 has a three-layer structure consisting of a first metal layer 11a, a second metal layer 11b, and a third metal layer 11c. Furthermore, the wiring body 211 is composed of a first wiring body 111 and a second wiring body 112 that are separated from each other, similar to the wiring body 11 of the wiring member 10 in the semiconductor light-emitting device 1 described above.

[0082] In the soldered base 201, the upper surface of the wiring member 210 is the connection region 10c, which is the interface with the solder 4. Specifically, the connection region 10c is a part of the upper surface of the third metal layer 11c in the wiring body 211. Since the third metal layer 11c is an Au layer, the connection region 10c in the soldered base 201 is the surface of Au. In this case, the contact angle of the connection region 10c with respect to the solder 4 is less than 90 degrees. In other words, the connection region 10c has high wettability with respect to the solder 4.

[0083] The block member 12 of the wiring member 210 is the same as the block member 12 of the wiring member 10 in the semiconductor light-emitting device 1 described above. In the soldered base 201 as well, the upper surface of the block member 12 is the block region 10b. Therefore, the contact angle of the block region 10b with respect to the solder 4 is greater than 90 degrees. Thus, in the soldered base 201, the contact angle of the block region 10b with respect to the solder 4 is greater than the contact angle of the connection region 10c with respect to the solder 4.

[0084] In a top view, the block region 10b is located on both outer sides of the connection region 10c in the longitudinal direction of the semiconductor laser bar 3. Since a pair of block members 12 are provided on the soldered base 201, there is also a pair of block regions 10b. Specifically, in a top view, the block region 10b is located on both outer sides of the connection region 10c in the longitudinal direction of the semiconductor laser bar 3.

[0085] Furthermore, in a top view, the solder 4 is positioned towards one side in the short direction of the base 200. In other words, the solder 4 is unevenly distributed on one side in the short direction of the base 2. In this embodiment, the solder 4 is located above the first wiring body 111.

[0086] Then, when manufacturing the semiconductor light-emitting device 1 using the soldered base 201 shown in Figure 6, first, the soldered base 201 is manufactured as shown in Figure 7. Figure 7 is a diagram illustrating the method for manufacturing the soldered base 201 according to Embodiment 1. In Figure 7, the left figure is a top view, and the right figure is a cross-sectional view.

[0087] First, as shown in Figures 7(a) to 7(c), a base 200 having a wiring member 210 is prepared as the first step. In this embodiment, a base 200 is manufactured on which a wiring member 210, including a wiring body 211 and a block member 12, is formed. In this first step, the wiring member 210 is formed by sequentially forming a first connecting member and a block member 12, which are connected to the solder 4 when the semiconductor laser bar 3 is mounted. In this embodiment, a wiring member 210 is formed which includes a second metal layer 11b as the first connecting member connected to the solder 4.

[0088] Specifically, first, a support 20 is prepared as shown in Figure 7(a). In this embodiment, a rectangular parallelepiped support 20 made of AlN was prepared.

[0089] Next, as shown in Figure 7(b), a wiring body 211 consisting of a first metal layer 11a, a second metal layer 11b, and a third metal layer 11c is formed on the upper surface of the support 20 in a predetermined shape. In this embodiment, the first metal layer 11a, the second metal layer 11b, and the third metal layer 11c are formed by plating, consisting of an Au layer, a Pt layer, and an Au layer, respectively. The wiring body 211 is separated into a first wiring body 111 and a second wiring body 112.

[0090] Next, as shown in Figure 7(c), a pair of block members 12 are formed on the wiring body 211. Specifically, a pair of block members 12 of a predetermined shape are formed on the third metal layer 11c of the wiring body 211, facing each other with a predetermined distance between them. In this embodiment, each of the pair of block members 12 is rectangular in shape, and its top view shape is a rectangle with an elongated length in the short-side direction of the semiconductor laser bar 3. The pair of block members 12 are formed on the first wiring body 111 of the two wiring bodies 112 in the wiring body 211. In this embodiment, a Pt layer is formed as the block member 12.

[0091] In this way, a base 200 can be manufactured on which a wiring member 210, composed of a wiring body 211 and a block member 12, is formed.

[0092] Next, as shown in Figure 7(d), the second step is to place solder 4 of a predetermined shape on the upper surface of the wiring member 210 of the base 200. Specifically, the solder 4 is formed on the third metal layer 11c of the wiring body 211. The third metal layer 11c is the uppermost layer of the wiring body 211 and is the connection area 10c to which the solder 4 is connected. In other words, the solder 4 is placed on the connection area 10c.

[0093] Furthermore, in the second step, the solder 4 is formed between a pair of block members 12. In other words, the solder 4 is sandwiched between the pair of block members 12. In this embodiment, the solder 4 is in the shape of a rectangular plate, and its top view shape is a rectangle that is elongated in the longitudinal direction of the semiconductor laser bar 3. In this embodiment, the solder 4, which is an AuSn layer (Au 80%), was formed by a vapor deposition method. Also, the thickness of the solder 4 is greater than the thickness of the block members 12.

[0094] As a result, a soldered base 201 is completed, in which solder 4 is formed on the upper surface of the wiring member 210 having the wiring body 211 and the block member 12.

[0095] Next, as shown in Figure 8, the semiconductor laser bar 3 is mounted on the soldered base 201 as the third step. Figure 8 is a diagram illustrating the method of mounting the semiconductor laser bar 3 on the soldered base 201. In Figure 8, the left figure is a top view, and the right figure is a cross-sectional view.

[0096] In the third step, first, as shown in Figure 8(a), the semiconductor laser bar 3 is placed on the solder 4 of the soldered base 201 in a junction-down position. Then, as shown in Figure 8(b), the semiconductor laser bar 3 is heated while being pressed down to melt the solder 4. After that, the melted, liquid solder 4 hardens, allowing the semiconductor laser bar 3 to be joined to the base 2 by the solder 4. As an example, the soldered base 201 is heated to 250°C, then the semiconductor laser bar 3 is placed on the soldered base 201 in a junction-down position, the heating temperature of the soldered base 201 is set to 320°C and held for 10 seconds, and then cooled. After that, as shown in Figure 8(c), the gold wire 6 and the power supply wires 7a and 7b are wire-bonded. This completes the semiconductor light-emitting device 1.

[0097] In this third step, as shown in Figure 8(b), the molten solder 4 is pressed against the semiconductor laser bar 3. As a result, the liquid solder 4 is spread out between the semiconductor laser bar 3 and the wiring member 210 by the pressure from the semiconductor laser bar 3.

[0098] Here, if the wettability of the contact surface to which the solder 4 comes into contact is low, the spread of the liquid solder 4 will be inhibited (blocked). In this embodiment, on both outer sides of the connection region 10a to which the solder 4 is connected, there are block regions 10b with a contact angle greater than 90 degrees with respect to the solder 4. In other words, the connection region 10a is sandwiched between a pair of block regions 10b with low wettability to the solder 4. As a result, the liquid solder 4 that spreads from the connection region 10a in the longitudinal direction of the semiconductor laser bar 3 can be repelled by the block regions 10b, thereby suppressing the spread of the liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3. As a result, the spread of the liquid solder 4 repelled by the pair of block regions 10b is promoted toward the shorter direction of the semiconductor laser bar 3 (the shorter direction of the base 2). In other words, the direction of the flow of the liquid solder 4 can be changed from toward the side surface S3 of the semiconductor laser bar 3 to toward the rear end surface S2 of the semiconductor laser bar 3. In this way, the solder 4 flowing in the longitudinal direction of the semiconductor laser bar 3 can be directed towards the short direction of the semiconductor laser bar 3, thereby preventing the solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3.

[0099] In particular, in this embodiment, the solder 4 is sandwiched between a pair of thick block members 12 having a block region 10b on its upper surface. Therefore, the solder 4 flowing in the longitudinal direction of the semiconductor laser bar 3 is not only restricted from spreading due to its low wettability, but the thickness of the pair of block members 12 also physically restricts the movement of the liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3. Specifically, the liquid solder 4 can be blocked by the inner sides of each of the pair of block members 12. In other words, the pair of block members 12 also function as stoppers to stop the flow of liquid solder 4. This effectively prevents the solder 4 from overflowing from the longitudinal side surface S3 of the semiconductor laser bar 3. Note that the wettability of the pair of block members 12 is low not only on the upper surface (block region 10b) but also on the sides.

[0100] On the other hand, the solder 4 that flows in the short direction of the semiconductor laser bar 3 due to the pressure from the semiconductor laser bar 3, and the solder 4 that is released in the short direction of the semiconductor laser bar 3 by the pair of block regions 10b (block members 12), will protrude from the rear end face S2 of the semiconductor laser bar 3. Therefore, in the third step, a rear-side extended portion 4a is formed in the solder 4, extending outward from the rear end face S2 of the semiconductor laser bar 3.

[0101] In this embodiment, the wettability of the underside of the solder 4 that protrudes from the rear end face S2 of the semiconductor laser bar 3 is high. As a result, the rear extension portion 4a is formed in a partially raised state, and the distance does not easily increase in the direction of protrusion. Specifically, the height of the rear extension portion 4a increases in the short-side direction of the semiconductor laser bar 3, and then decreases as it moves away from the semiconductor laser bar 3.

[0102] Furthermore, in the third step, as shown in Figure 9, it is preferable to heat the solder base 201 while irradiating the solder 4 with a heating laser beam. Specifically, first, as shown in Figure 9(a), the solder base 201 on which the semiconductor laser bar 3 is placed on the solder 4 is heated with a heater 300, and then, as shown in Figure 9(b), while heating the solder base 201 with the heater 300, the solder 4 located outside the rear end face S2 of the semiconductor laser bar 3 is locally irradiated with a heating laser beam. As a result, the temperature of the part of the solder 4 closer to the rear end face S2 of the semiconductor laser bar 3 (rear end) becomes higher than the temperature of the part of the solder 4 closer to the front end face S1 of the semiconductor laser bar 3 (front end).

[0103] Then, as shown in Figure 9(c), when the heating laser light is continuously irradiated, the solder 4 maintains a state where the temperature at the rear end is higher than the temperature at the front end. Liquid solder 4 has higher fluidity at higher temperatures. Therefore, a flow toward the rear is generated in the liquid solder 4 whose rear end is heated by the heating laser light. As a result, the liquid solder 4 becomes more likely to spill out toward the rear from the rear end face S2 of the semiconductor laser bar 3.

[0104] In this way, by heating the soldered base 201 while locally irradiating the rear end of the solder 4 with a heating laser beam, a raised rear extension portion 4a can be easily formed on the solder 4. As an example, when heating the rear end of the solder 4, the laser beam irradiation conditions include using a CW laser beam with a wavelength of 808 nm and a laser beam output of 1 W / cm². 2 The irradiation area was set to 1 mm × 10 mm × 10 μm, the irradiation time to 0.5 seconds, the effective absorption rate to 10%, and the assumed temperature difference to 20°C.

[0105] Furthermore, in this embodiment, as shown in Figure 8(a), the solder 4 is placed in contact with the third metal layer 11c, which is the uppermost layer of the wiring body 211 of the soldered base 201. The third metal layer 11c is an Au layer, and the solder 4 is an AnSn layer. Therefore, in the third step, when the soldered base 201 is heated while the semiconductor laser bar 3 is pressed down to melt the solder 4, the solder 4, which is an AuSn layer, melts on top of the third metal layer 11c, which is an Au layer. At this time, Sn, a component of the solder 4, diffuses into the third metal layer 11c and erodes the Au of the third metal layer 11c, so that, as shown in Figure 8(b), the Au and Sn alloy together, and the third metal layer 11c becomes an alloyed layer 11c1 of the AuSn layer, which is a compositional transition region. In other words, the third metal layer 11c located below the solder 4 becomes the alloyed layer 11c1 of the AuSn layer. As a result, the third metal layer 11c, which is part of the wiring member 210, and the solder 4 become integrated via the compositional transition region (alloyed layer 11c1). Therefore, the bonding strength between the wiring member 10 and the solder 4 in the semiconductor light-emitting device 1 can be improved, and the semiconductor laser bar 3 and the base 2 can be firmly bonded together.

[0106] In this embodiment, in the third step, the entire third metal layer 11c in the portion of the solder base 201 where the solder 4 is placed becomes an alloyed layer 11c1 of the AuSn layer. In other words, the entire thickness of the third metal layer 11c in the portion where the solder 4 is placed becomes part of the solder 4. Therefore, in the third step, the solder 4 incorporates the alloyed layer 11c1 formed from the third metal layer 11c in the portion where the solder 4 is placed, and appears to be joined to the second metal layer 11b. As a result, a wiring body 11 including the second metal layer 11b to which the solder 4 is connected is formed.

[0107] As described above, the semiconductor light-emitting device 1 according to this embodiment comprises a base 2 having a wiring member 10, a semiconductor laser bar 3, and solder 4 disposed between the wiring member 10 and the semiconductor laser bar 3. The surface of the wiring member 10 facing the semiconductor laser bar 3 includes a connection region 10a, which is the interface with the solder 4, and a block region 10b with a contact angle with respect to the solder 4 greater than 90 degrees. In a top view, the connection region 10a is located inside the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction of the semiconductor laser bar 3, and at least a portion of the block region 10b is located between the connection region 10a and the side surface S3 of the semiconductor laser bar 3 in a top view, and the inner portion of the block region 10b in the longitudinal direction of the semiconductor laser bar 3 is located inside the side surface S3 of the semiconductor laser bar 3. In other words, in the longitudinal direction of the semiconductor laser bar 3, a block region 10b with a contact angle with respect to the solder 4 greater than 90 degrees exists to the side of the connection region 10a.

[0108] Specifically, in the semiconductor light-emitting device 1 of this embodiment, the wiring member 10 includes a wiring body 11 which includes a second metal layer 11b as a first connecting member to which solder 4 is connected, and a block member 12 located above the wiring body 11, wherein at least a part of the upper surface of the block member 12 is a block region 10b, and at least a part of the upper surface of the second metal layer 11b which is the first connecting member is a connecting region 10a.

[0109] A semiconductor light-emitting device 1 with such a configuration can be manufactured using a base 200 equipped with a wiring member 210. Specifically, by using a base 200 equipped with a wiring member 210 whose upper surface includes a connection region 10c with a contact angle to the solder 4 less than 90 degrees and a block region 10b with a contact angle to the solder 4 greater than 90 degrees, the semiconductor laser bar 3 can be joined to the wiring member 210 via the solder 4.

[0110] In this embodiment, a soldered base 201, on which solder 4 is pre-formed on the base 200, is used to join the semiconductor laser bar 3 to the wiring member 210. Specifically, a soldered base 201 is used, which comprises a wiring member 210 having a connection area 10c and a block area 10b on its upper surface, and solder 4 placed in the connection area 10c of the wiring member 210, to join the semiconductor laser bar 3 to the wiring member 210 via the solder 4.

[0111] Then, when mounting the semiconductor laser bar 3 using the base 200 or the soldered base 201, the solder 4, which has molten and turned into liquid, joins the wiring member 210 of the base 200 or the soldered base 201 to the semiconductor laser bar 3.

[0112] In this embodiment, in the longitudinal direction of the semiconductor laser bar 3, a block region 10b (the upper surface of the block member 12) exists to the side of the connection region 10a to which the solder 4 is connected, where the contact angle with respect to the solder 4 is greater than 90 degrees. In other words, a block region 10b with low wettability to the solder 4 exists to the side of the connection region 10a.

[0113] As a result, when the molten solder 4 is pressed down by the semiconductor laser bar 3 and spreads to reach the block region 10b, the liquid solder 4 is repelled by the block region 10b, which has low wettability to the solder 4. In other words, the liquid solder 4 that spreads in the longitudinal direction of the semiconductor laser bar 3 can be repelled by the block region 10b. This suppresses the spread of liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3. Therefore, it is possible to suppress the liquid solder 4 from overflowing and extending outward from the side surface S3 of the semiconductor laser bar 3. As a result, it is possible to suppress the short circuit and leakage that occurs when solder 4 adheres to the side surface S3 of the semiconductor laser bar 3, causing a short circuit at the pn junction on the side surface S3.

[0114] Furthermore, in this embodiment, the solder 4 that is repelled in the block region 10b will protrude from the rear end face S2 of the semiconductor laser bar 3. As a result, a rear extension portion 4a is formed on the rear portion of the solder 4. A rear end face coating film made of a material with low wettability to the solder 4 is formed on the rear end face S2 of the semiconductor laser bar 3. Therefore, this rear extension portion 4a does not come into contact with the side surface S3 of the semiconductor laser bar 3. Consequently, it is possible to prevent the solder 4 that protrudes from the rear end face S2 of the semiconductor laser bar 3 from wrapping around to the side surface S3 and short-circuiting the pn junction on the side surface S3.

[0115] Furthermore, because the solder 4 protrudes from the rear end face S2 of the semiconductor laser bar 3, forming a rear extension 4a, the surface area of ​​the solder 4 exposed to the outside air is increased, allowing the heat generated by the semiconductor laser bar 3 to be efficiently dissipated from the rear.

[0116] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, the block region 10b is located on each of the outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3 when viewed from above. In other words, when viewed from above, the connection region 10a to which the solder 4 is connected is located between the pair of block regions 10b. Specifically, the connection region 10a is located between the pair of block members 12 whose upper surfaces are block regions 10b. Similarly, in the base 200 or the soldered base 201, the connection region 10c to which the solder 4 is placed is located between the pair of block regions 10b (block members 12).

[0117] This configuration allows a pair of block regions 10b (block members 12) to exist near both ends in the longitudinal direction of the semiconductor laser bar 3 as areas where solder 4 is not formed. This suppresses the influence of liquid solder 4, which has spread from near the center of the solder 4 toward each of the pair of side surfaces S3 of the semiconductor laser bar 3, on the spread near the ends of the solder 4. Therefore, the spread of liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3 can be further suppressed. In particular, as in this embodiment, the effect is further enhanced by providing multiple block regions 10b (block members 12) instead of just one.

[0118] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, the block region 10b extends outward from the portion directly below the semiconductor laser bar 3 towards the rear end face S2 when viewed from above, and the end portion of the side surface S3 of the semiconductor laser bar 3 towards the rear end face S2 overlaps with the block region when viewed from above.

[0119] This configuration makes it difficult for the solder 4, which has been heated and melted into a liquid state, to reach the side surface S3 of the semiconductor laser bar 3, even if it tries to spread in the longitudinal direction of the semiconductor laser bar 3. As a result, it is possible to effectively suppress the solder 4 that has overflowed from the rear end surface S2 of the semiconductor laser bar 3 from spreading to the side surface S3 of the semiconductor laser bar 3.

[0120] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, as shown in Figure 3A, the width W1 of the interface between the solder 4 and the semiconductor laser bar 3 is larger than the width W2 of the interface between the solder 4 and the wiring member 10.

[0121] This configuration allows for a smaller semiconductor light-emitting device 1 and easier handling of components such as the semiconductor laser bar 3, compared to the case where a block member 12 is provided on the semiconductor laser bar 3.

[0122] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, as shown in Figure 5, the angle θ1 between the straight line connecting the outer lower end of the semiconductor laser bar 3 and the inner end of the block region 10b (the inner upper end of the block member 12) and the lower surface of the semiconductor laser bar 3 is less than 45 degrees.

[0123] This configuration makes it possible to suppress the solder 4, which has melted due to heating, from overflowing from the block member 12 when mounting the semiconductor laser bar 3 using the base 200 or the soldered base 201.

[0124] Furthermore, in the semiconductor light-emitting device 1 of this embodiment, as shown in Figure 5, the angle θ2 between the straight line connecting the inner end of the lower surface of the block member 12 and the outer end of the gain region 3c closest to the block member 12 among the multiple gain regions, and the lower surface of the semiconductor laser bar 3, is less than 45 degrees.

[0125] This configuration allows for sufficient heat dissipation from the outermost gain region 3c. In other words, the heat from the outermost gain region 3c can be dissipated at a level comparable to that of the other gain regions 3c.

[0126] (Modification 1 of Embodiment 1) Next, a modification 1 of Embodiment 1 will be described using Figures 10A to 10D. Figure 10A is a top view of a semiconductor light-emitting device 1A according to modification 1 of Embodiment 1. Figure 10B is a cross-sectional view of Figure 10A along the XB-XB line, Figure 10C is a cross-sectional view of Figure 10A along the XC-XC line, and Figure 10D is a cross-sectional view of Figure 10A along the XD-XD line.

[0127] In the semiconductor light-emitting device 1 according to Embodiment 1 described above, when the wiring member 210 on the soldered base 201 and the semiconductor laser bar 3 are joined by solder 4, the portion of the third metal layer 11c of the wiring member 210 located below the solder 4 is alloyed to become an alloyed layer 11c1. As a result, in the semiconductor light-emitting device 1, the solder 4 that joins the semiconductor laser bar 3 and the base 2 is connected to the second metal layer 11b of the wiring body 11 of the wiring member 10. In other words, in Embodiment 1 described above, the second metal layer 11b of the wiring body 11 is the connecting member (first connecting member) that is connected to the solder 4, and the connection region 10a, which is the interface between the solder 4 and the wiring member 10, is the upper surface of the second metal layer 11b.

[0128] On the other hand, in the semiconductor light-emitting device 1A according to this modified example, as shown in Figures 10A to 10D, when the wiring member 210 on the soldered base 201 and the semiconductor laser bar 3 are joined by solder 4, the portion of the third metal layer 11c of the wiring member 210 located below the solder 4 remains unalloyed. As a result, the solder 4, which is an AuSn layer joining the semiconductor laser bar 3 and the base 2A, is connected to the third metal layer 11c of the wiring body 11A of the wiring member 10A. Therefore, in this modified example, the solder 4 joining the semiconductor laser bar 3 and the base 2A is connected to the third metal layer 11c of the wiring body 11A of the wiring member 10A. In other words, in this modified example, the third metal layer 11c of the wiring body 11A is the connecting member (first connecting member) connected to the solder 4, and the connecting region 10a, which is the interface between the solder 4 and the wiring member 10A, is the upper surface of the third metal layer 11c of the wiring member 10A. Specifically, since the third metal layer 11c is an Au layer, the connection region 10a is the surface of Au. If a solder that does not contain Sn is used instead of AuSn as the solder 4, the third metal layer 11c will remain unalloyed.

[0129] In this modified example, since the block member 12 is a Pt layer, the block region 10b is the surface of Pt. This makes it easy to realize a difference in wettability between the connection region 10a and the block region 10b. Furthermore, the block region 10b is located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0130] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1A according to this modified example and the semiconductor light-emitting device 1 according to Embodiment 1 described above have basically the same configuration.

[0131] Therefore, the semiconductor light-emitting device 1A according to this modified example has the same effects as the semiconductor light-emitting device 1 according to the above embodiment 1. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0132] In this modified example, the semiconductor light-emitting device 1A does not have a third metal layer 11c located below the solder 4, but this is not the only example. For example, as shown in Figure 11, the semiconductor light-emitting device 1B may have a portion of the third metal layer 11c in the wiring body 11B of the wiring member 10B located below the solder 4 that is alloyed. Specifically, by reducing the heating time or lowering the heating temperature, only the upper portion of the third metal layer 11c on the semiconductor laser bar 3 side in the thickness direction may become the alloyed layer 11c1. In the semiconductor light-emitting device 1B shown in Figure 11, the solder 4 that joins the semiconductor laser bar 3 and the base 2B is connected to the third metal layer 11c in the wiring body 11B of the wiring member 10B. In other words, the connection region 10a, which is the interface between the solder 4 and the wiring member 10B, is the interface between the solder 4 and the third metal layer 11c.

[0133] (Modification 2 of Embodiment 1) Next, a modification 2 of Embodiment 1 will be described using Figure 12. Figure 12 shows the configuration of the semiconductor light-emitting device 1C and the base 200C for mounting the semiconductor laser bar 3 according to modification 2 of Embodiment 1. In Figure 12, (a) is a top view of the base 200C used when mounting the semiconductor laser bar 3, (b) is a top view of the semiconductor light-emitting device 1C according to this modification, (c) is a cross-sectional view along the cc line of (b), and (d) is a cross-sectional view along the dd line of (b). Note that in the semiconductor light-emitting device 1C shown in Figure 12, the gold wire 6, power supply wires 7a and 7b are omitted.

[0134] As shown in Figures 12(b) to (c), the semiconductor light-emitting device 1C according to this modified example comprises a base 2C having a wiring member 10C composed of a wiring body 11 and a block member 12C, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10C and the semiconductor laser bar 3, similar to the semiconductor light-emitting device 1 according to Embodiment 1 above.

[0135] Furthermore, as shown in Figure 12(a), the base 200C according to this modified example comprises a wiring member 210C composed of a wiring body 11 and a pair of block members 12C, and a support 20 that supports the wiring member 210C, similar to the base 200 according to Embodiment 1 described above.

[0136] In the semiconductor light-emitting device 1 according to Embodiment 1 described above, the distance between the inner portions of the pair of block members 12 in the longitudinal direction of the semiconductor laser bar 3 was constant. However, in the semiconductor light-emitting device 1C according to this modified example, the distance between the inner portions of the pair of block members 12C in the longitudinal direction of the semiconductor laser bar 3 is not constant.

[0137] Specifically, as shown in Figure 12, the distance between the inner portions of a pair of block members 12C in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side of the semiconductor laser bar 3 than on the front end face S1 side. Therefore, the distance between the inner portions of a pair of block regions 10b in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side (opposite side to the front end face S1 side) than on the other side (opposite side to the front end face S1 side).

[0138] Furthermore, as the spacing of the inner portion of the block member 12C (block region 10b) changes in this manner, in the semiconductor light-emitting device 1C of this modified example, as shown in Figure 12(b), the width of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3 is larger on the rear end face S2 side than on the front end face S1 side when viewed from above. Similarly, in the base 200C of this modified example, as shown in Figure 12(a), the width of the connection region 10c in the longitudinal direction of the semiconductor laser bar 3 is larger on the rear end face S2 side than on the front end face S1 side.

[0139] In this modified example, the top view shape of each block member 12C is trapezoidal, and a pair of block members 12C are arranged so that the tapered portions (inclined portions) of the trapezoid face each other. Therefore, the distance between the inner portions of the pair of block members 12C (block region 10b) gradually increases from the front end face S1 to the rear end face S2 of the semiconductor laser bar 3. Similarly, the widths of the connection regions 10a and 10c also gradually increase from the front end face S1 to the rear end face S2 of the semiconductor laser bar 3.

[0140] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1C according to this modified example and the semiconductor light-emitting device 1 according to Embodiment 1 described above have basically the same configuration.

[0141] Therefore, the semiconductor light-emitting device 1C and base 200C according to this modified example have the same effects as the semiconductor light-emitting device 1 and base 200 according to Embodiment 1. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which can cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0142] Furthermore, in the semiconductor light-emitting device 1C and base 200C according to this modified example, the distance between the inner portions of the pair of block members 12C (block region 10b) in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side than on the front end face S1 side of the semiconductor laser bar 3.

[0143] When the liquid solder 4 is pressed down and spread by the semiconductor laser bar 3, a force is applied that causes it to reflect off the block region 10b. In this case, if the distance between the inner portions of the pair of block regions 10b is not constant, the liquid solder 4 will be pushed outwards toward the side where the distance between the inner portions of the pair of block regions 10b is wider. In this modified example, the distance between the inner portions of the pair of block regions 10b is greater on the rear end face S2 side of the semiconductor laser bar 3 than on the front end face S1 side. Therefore, the liquid solder 4 that has been pressed down and spread by the semiconductor laser bar 3 will be pushed outwards toward the rear end face S2 side where the distance between the inner portions of the pair of block regions 10b is wider. In other words, it is possible to promote the effect of changing the direction of the flow of the component of liquid solder 4 that is traveling toward the side surface S3 of the semiconductor laser bar 3 toward the rear end face S2 of the semiconductor laser bar 3. This allows the solder 4 components that flow in the longitudinal direction of the semiconductor laser bar 3 to be more effectively directed toward the short direction of the semiconductor laser bar 3, thereby further suppressing the leakage of liquid solder 4 from the side surface S3 of the semiconductor laser bar 3.

[0144] Furthermore, in the semiconductor light-emitting device 1C and base 200C according to this modified example, when viewed from above, the width of the connection regions 10a and 10c in the longitudinal direction of the semiconductor laser bar 3 is larger on the rear end face S2 side than on the front end face S1 side of the semiconductor laser bar 3.

[0145] This configuration makes it easy to ensure that the longitudinal width of the block region 10b located on both the outer sides of the connection regions 10a and 10c satisfies the relationship that the width on the front end face S1 side is less than the width on the rear end face S2 side.

[0146] Furthermore, by setting the widths of the connection regions 10a and 10c to satisfy the relationship that the width on the front end face S1 side < the width on the rear end face S2 side, even if the top view shape of the solder 4 before the semiconductor laser bar 3 is placed is rectangular (i.e., even if the longitudinal width of the solder 4 before melting is constant), as in the first embodiment described above, the liquid solder 4 is blocked by the block region 10b, and as a result, the longitudinal width of the connection region 10a can be made the same as the width of the inner portion of the pair of block regions 10b.

[0147] However, if solder 4 is formed on the base 200 in advance, it is preferable to ensure that the width of the solder 4 in the longitudinal direction of the semiconductor laser bar 3 satisfies the relationship that the width on the front end face S1 side < the width on the rear end face S2 side, as shown in the soldered base 201C in Figure 13. For example, the top view shape of the solder 4 should be a trapezoid where the width on the rear end face S2 side is greater than the width on the front end face S1 side, rather than a rectangle where the width on the front end face S1 side is the same.

[0148] As a result, when the molten, liquid solder 4 is pressed down by the semiconductor laser bar 3, the solder 4 flowing in the longitudinal direction of the semiconductor laser bar 3 can be more effectively directed towards the short direction of the semiconductor laser bar 3. Therefore, the overflow of solder 4 from the side surface S3 of the semiconductor laser bar 3 can be further suppressed.

[0149] (Modification 3 of Embodiment 1) Next, a modification 3 of Embodiment 1 will be described using Figure 14. Figure 14 shows a base 200 for mounting a semiconductor light-emitting device 1D and a semiconductor laser bar 3D, according to modification 3 of Embodiment 1. D This figure shows the configuration of the semiconductor laser bar 3D. In Figure 14, (a) is a top view of the semiconductor light-emitting device 1D according to this modified example, (b) is a cross-sectional view along the bb line in (a), (c) is a top view of the base 200 in this modified example, and (d) is a plan view of the semiconductor laser bar 3D according to this modified example as seen from the pad electrode 5 side (p-side electrode side). Note that in the semiconductor light-emitting device 1D shown in Figure 14, the gold wire 6 and power supply wires 7a and 7b are omitted.

[0150] As shown in Figures 14(a) and 14(b), the semiconductor light-emitting device 1D according to this modified example comprises a base 2 having a wiring member 10 composed of a wiring body 11 and a block member 12, a semiconductor laser bar 3D, and solder 4 for joining the wiring member 10 and the semiconductor laser bar 3D, similar to the semiconductor light-emitting device 1 according to Embodiment 1. As shown in Figure 14(c), the base 200 according to this modified example has the same configuration as the base 200 according to Embodiment 1.

[0151] The semiconductor light-emitting device 1 according to Embodiment 1 described above and the semiconductor light-emitting device 1D according to this modified example differ in the configuration of the semiconductor laser bar 3D. Specifically, as shown in Figures 14(b) and (d), the semiconductor laser bar 3D according to this modified example is further equipped with a pair of laser-side block members 8 on the side facing the base 2, compared to the semiconductor laser bar 3 according to Embodiment 1 described above.

[0152] The pair of laser-side block members 8 are provided at both outer ends of the pad electrode 5 in the longitudinal direction of the semiconductor laser bar 3D. Specifically, one of the pair of laser-side block members 8 is stacked on one end of the pad electrode 5, and the other of the pair of laser-side block members 8 is stacked on the other end of the pad electrode 5.

[0153] Each surface of the pair of laser-side block members 8 has a contact angle greater than 90 degrees with respect to the solder 4, and, similar to the block region 10b, has low wettability to the liquid solder 4. In other words, in this modified example, if the block region 10b is considered the first block region, then the surface of the laser-side block member 8 becomes the second block region. Also, if the block member 12 is considered the first block member, then the laser-side block member 8 is the second block member. As an example, the laser-side block member 8 is a Pt layer.

[0154] The laser-side block member 8 may consist of a single layer or multiple layers. If the laser-side block member 8 consists of multiple layers, the contact angle of the surface of the laser-side block member 8 can be made greater than 90 degrees by making the uppermost layer of the laser-side block member 8 a Pt layer. The laser-side block member 8 may also be part of the pad electrode 5.

[0155] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1D according to this modified example and the semiconductor light-emitting device 1 according to Embodiment 1 described above have basically the same configuration.

[0156] Therefore, the semiconductor light-emitting device 1D according to this modified example provides the same effects as the semiconductor light-emitting device 1 according to Embodiment 1 described above. For example, in this modified example as well, the liquid solder 4 can be repelled by the block region 10b, thus providing effects such as suppressing the liquid solder 4 from spilling out from the side surface S3 of the semiconductor laser bar 3.

[0157] Furthermore, in the semiconductor light-emitting device 1D according to this modified example, the semiconductor laser bar 3D is further provided with a pair of laser-side block members 8 having surfaces with a contact angle greater than 90 degrees with respect to the solder 4.

[0158] This configuration allows the liquid solder 4 to be repelled not only by the block member 12 (block region 10b) but also by the pair of laser-side block members 8. This further suppresses the liquid solder 4 from spilling out from the side surface S3 of the semiconductor laser bar 3. Therefore, it further suppresses the occurrence of leakage due to solder 4 adhering to the side surface S3 of the semiconductor laser bar 3 and causing a short circuit at the pn junction of the side surface S3.

[0159] Furthermore, although not shown in the diagram, it is preferable that the distance between the inner ends of the pair of laser-side block members 8 is greater on the rear end face S2 side of the semiconductor laser bar 3 than on the front end face S1 side. This effectively allows the solder 4 flowing in the longitudinal direction of the semiconductor laser bar 3 to escape in the short direction of the semiconductor laser bar 3, thereby further suppressing the leakage of liquid solder 4 from the side surface S3 of the semiconductor laser bar 3.

[0160] Furthermore, this modified example can also be applied to the following embodiments 2 and 3.

[0161] (Modification 4 of Embodiment 1) Next, a modification 4 of Embodiment 1 will be described using Figure 15. Figure 15 shows the configuration of the semiconductor light-emitting device 1E and the base 200E for mounting the semiconductor laser bar 3 according to modification 4 of Embodiment 1. In Figure 15, (a) is a top view of the base 200E according to this modification, (b) is a top view of the semiconductor light-emitting device 1E according to this modification, and (c) is a front view of the semiconductor light-emitting device 1E according to this modification. Note that in the semiconductor light-emitting device 1E shown in Figure 15, the gold wire 6 and the power supply wires 7a and 7b are omitted.

[0162] As shown in Figures 15(b) and (c), the semiconductor light-emitting device 1E according to this modified example comprises a base 2E having a wiring member 10E composed of a wiring body 11 and a block member 12E, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10E and the semiconductor laser bar 3, similar to the semiconductor light-emitting device 1 according to Embodiment 1 above.

[0163] Furthermore, as shown in Figure 15(a), the base 200E according to this modified example comprises a wiring member 210E composed of a wiring body 11 and a pair of block members 12E, and a support 20 that supports the wiring member 210E, similar to the base 200 according to Embodiment 1 described above.

[0164] In the semiconductor light-emitting device 1 and base 200 according to Embodiment 1 described above, the pair of block members 12 were not connected, and each of the pair of block members 12 was separated and formed in an island shape, but in the semiconductor light-emitting device 1E according to this modified example and base In 200E, as shown in Figure 15, a pair of block members 12E are connected by a connecting portion 12a.

[0165] Specifically, the connecting portion 12a connects the front end face S1 side portions of the pair of block members 12E. Therefore, in this modified example, in a top view, the block region 10b includes the front-side block region 10b1, which is the upper surface of the connecting portion 12a, on the front end face S1 side of the connecting region 10a. The connecting portion 12a is made of the same material as the block member 12E and has the same thickness as the block member 12E. Consequently, the front-side block region 10b1, which is the upper surface of the connecting portion 12a, has low wettability to solder 4.

[0166] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1E according to this modified example and the semiconductor light-emitting device 1 according to Embodiment 1 described above have basically the same configuration.

[0167] Therefore, the semiconductor light-emitting device 1E according to this modified example provides the same effects as the semiconductor light-emitting device 1 according to Embodiment 1 described above. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0168] Furthermore, in the semiconductor light-emitting device 1E in this modified example, the block region 10b includes a front-side block region 10b1 that is located closer to the front end face S1 than the connection region 10a.

[0169] This configuration effectively allows the liquid solder 4 to escape to the rear end face S2 side of the semiconductor laser bar 3, further suppressing the overflow of liquid solder 4 from the side surface S3 of the semiconductor laser bar 3. Moreover, since the block region 10b includes the front block region 10b1, the overflow of solder 4 from the front end face S1 is suppressed, thus preventing the laser light emitted from the semiconductor laser bar 3 from being obscured by solder 4 overflowing from the front end face S1.

[0170] Furthermore, this modified example can also be applied to the following embodiments 2 and 3.

[0171] (Modification 5 of Embodiment 1) Next, a modification 5 of Embodiment 1 will be described using Figure 16. Figure 16 is a cross-sectional view of the semiconductor light-emitting device 1F according to modification 5 of Embodiment 1. Note that in Figure 16, the ridge portion 3a and insulating film 3b of the semiconductor laser bar 3 are omitted.

[0172] As shown in Figure 16, the semiconductor light-emitting device 1F according to this modified example comprises a base 2 having a wiring member 10 composed of a wiring body 11 and a block member 12, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10 and the semiconductor laser bar 3, similar to the semiconductor light-emitting device 1 according to Embodiment 1 above.

[0173] The semiconductor light-emitting device 1 according to Embodiment 1 described above and the semiconductor light-emitting device 1F according to this modified example differ in the shape of the semiconductor laser bar 3. Specifically, in the semiconductor light-emitting device 1 according to Embodiment 1 described above, no warping occurred in the semiconductor laser bar 3, whereas in the semiconductor light-emitting device 1F according to this modified example, warping occurred in the semiconductor laser bar 3.

[0174] The elongated semiconductor laser bar 3 is prone to warping in the longitudinal direction. In particular, as in this modified example, the semiconductor laser bar 3 made of nitride semiconductor material such as GaN-based semiconductor material exhibits greater warping compared to the semiconductor laser bar made of GaAs-based semiconductor material.

[0175] Therefore, attempting to suppress the warping of the semiconductor laser bar 3, which is made of nitride semiconductor material, would require applying a greater force to the semiconductor laser bar 3, potentially damaging it.

[0176] On the other hand, when connecting the semiconductor laser bar 3 to the wiring member 210 using the base 200 or the soldered base 201, if the semiconductor laser bar 3 is pressed too hard in an attempt to prevent it from warping, the liquid solder 4 is likely to ooze out from the side surface S3 of the semiconductor laser bar 3.

[0177] In this respect, in the semiconductor light-emitting device 1F according to this modified example, since there is a block region 10b in the wiring member 210 that has low wettability to solder 4, it is possible to suppress liquid solder 4 from spilling out from the side surface S3 of the semiconductor laser bar 3.

[0178] Therefore, as shown in Figure 16, in the semiconductor light-emitting device 1F according to this modified example, when mounting the semiconductor laser bar 3 onto the base 2, the force pressing down on the semiconductor laser bar 3 is weakened, and the warp is corrected while leaving a slight curvature in the semiconductor laser bar 3, and the semiconductor laser bar 3 and the wiring member 10 are joined with solder 4.

[0179] As a result, even when using a semiconductor laser bar 3 made of a nitride semiconductor material that is prone to large warping in the longitudinal direction, it is possible to suppress the leakage of liquid solder 4 from the side surface S3 of the semiconductor laser bar 3 without causing significant damage to the semiconductor laser bar 3.

[0180] For example, if a GaN-based semiconductor laser bar 3 with a resonator length of 0.9 mm, a longitudinal length (bar length) of 10 mm, and a substrate thickness of 100 μm is used, the amount of warping of the semiconductor laser bar 3 (the maximum difference in height between the ends and the center) without correction is approximately 18 μm. In other words, the amount of warping of the semiconductor laser bar 3 before pressing is 18 μm. In this case, it is advisable to correct the warping by applying pressure to the semiconductor laser bar 3 so that the amount of warping after pressing is approximately 9 μm.

[0181] In Figure 16, the semiconductor laser bar 3 was curved such that the pad electrode 5 side was concave (i.e., convex upwards), but it may also be curved such that the pad electrode 5 side is convex (i.e., convex downwards), as shown in the semiconductor light-emitting device 1F in Figure 17. The amount of curvature of the semiconductor laser bar 3 in Figure 16 is equivalent to the amount of curvature of the semiconductor laser bar 3 in Figure 17.

[0182] Furthermore, this modified example can also be applied to the following embodiments 2 and 3.

[0183] (Embodiment 2) Next, the configuration of the semiconductor light-emitting device 1G according to Embodiment 2 will be described using Figures 18, 19, 20A, 20B, and 20C. Figure 18 is a top view of the semiconductor light-emitting device 1G according to Embodiment 2. Figure 19 is a front view of the semiconductor light-emitting device 1G according to Mounting Form 2. Figures 20A, 20B, and 20C are cross-sectional views of the semiconductor light-emitting device 1G according to Embodiment 2 along lines XXA-XXA, XXB-XXB, and XXC-XXC in Figure 18, respectively.

[0184] As shown in Figures 18 to 20C, the semiconductor light-emitting device 1G according to Embodiment 2, similar to the semiconductor light-emitting device 1 according to Embodiment 1, comprises a base 2G having a wiring member 10G composed of a wiring body 11 and a block member 12G, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10G and the semiconductor laser bar 3.

[0185] In the semiconductor light-emitting device 1 according to the above embodiment 1, a pair of block members 12 were provided on the wiring body 11. Specifically, the pair of block members 12 were provided on the third metal layer 11c which was laminated on the second metal layer 11b, which is a connecting member (first connecting member) to which the solder 4 is connected, among the multiple metal layers constituting the wiring body 11.

[0186] In contrast, in the semiconductor light-emitting device 1G according to this embodiment, the wiring body 11 and the pair of block members 12G are provided on the same plane. Specifically, both the wiring body 11 and the pair of block members 12G are provided on the upper surface of the support 20. Therefore, the first wiring body 111 connects the connection area between the solder 4 and the power supply wire 7a by bypassing the block members 12G. Furthermore, in a desirable configuration that minimizes the area of ​​the base 2G, the second wiring body 112 may not exist in the portion along the semiconductor laser bar 3 near the block member 12G that the first wiring body 111 bypasses. In this case, the gold wire 6 bridging the second wiring body 112 and the semiconductor laser bar 3 is partially not parallel.

[0187] Furthermore, in this embodiment, similar to Embodiment 1 described above, the connecting member (first connecting member) to which the solder 4 is connected among the multiple metal layers constituting the wiring body 11 is the second metal layer 11b, and at least a portion of the upper surface of the second metal layer 11b of the wiring member 10G is the connection region 10a, which is the interface between the solder 4 and the wiring member 10G. In this embodiment as well, the pair of block members 12G are located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3, and at least a portion of the upper surface of the pair of block members 12G is the block region 10b.

[0188] As shown in Figure 20A, in the semiconductor light-emitting device 1G, the height of the wiring body 11 is lower than the height of the block member 12G, which are arranged on the same plane as the wiring body 11 and the block member 12G. In other words, the height of the block member 12G is higher than the height of the wiring body 11. Furthermore, the height position of the connection region 10a, which is the upper surface of the second metal layer 11b in the wiring body 11, is lower than the height position of the block region 10b, which is the upper surface of the block member 12G.

[0189] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1G according to this embodiment and the semiconductor light-emitting device 1 according to Embodiment 1 above have basically the same configuration.

[0190] Furthermore, in this embodiment, similar to Embodiment 1 described above, when the semiconductor laser bar 3 is joined to the wiring member 10G with solder 4, the third metal layer 11c that contacts the solder 4 becomes an alloyed layer 11c1 and integrates with the solder 4, so the third metal layer 11c does not exist in the lower part of the solder 4 on the wiring body 11. However, as shown in Figure 21, for the base 200G before the semiconductor laser bar 3 is joined to the wiring member 10G, the third metal layer 11c of the wiring body 211 of the wiring member 210G is present in the region where the solder 4 is connected. Figure 21 is a diagram showing the configuration of the base 200G before the semiconductor laser bar 3 is joined. In Figure 21, (a) is a top view of the base 200G, and (b) is a cross-sectional view along the line bb in (a).

[0191] As shown in Figure 21, the base 200G according to this embodiment, similar to the base 200 according to Embodiment 1, comprises a wiring member 210G composed of a wiring body 11 and a pair of block members 12G, and a support 20 that supports the wiring member 210G.

[0192] Furthermore, as shown in Figure 22, in the semiconductor light-emitting device 1G of this embodiment, similar to Embodiment 1, the angle θ1 between the straight line connecting the outer lower end of the semiconductor laser bar 3 and the inner end of the block region 10b (the inner upper end of the block member 12G) and the lower surface of the semiconductor laser bar 3 is less than 45 degrees. In addition, the angle θ2 between the straight line connecting the inner lower end of the block member 12G and the outer end of the gain region 3c closest to the block member 12G among the multiple gain regions 3c and the lower surface of the semiconductor laser bar 3 is also less than 45 degrees, similar to Embodiment 1. This provides the same effects as Embodiment 1.

[0193] Next, a method for manufacturing the semiconductor light-emitting device 1G according to Embodiment 2 will be described. Specifically, a method for joining the semiconductor laser bar 3 and the wiring member 10G of the base 2G using solder 4 will be described.

[0194] In this embodiment as well, as shown in Figure 23, the semiconductor laser bar 3 is mounted using a soldered base 201G on which solder 4 is pre-formed on the support 20. Figure 23 is a diagram showing the configuration of the soldered base 201G according to Embodiment 2. In Figure 23, (a) is a top view of the soldered base 201G, and (b) is a cross-sectional view along the line bb in (a).

[0195] As shown in Figure 23, the soldered base 201G according to this embodiment has a configuration in which solder 4 is placed on the base 200G shown in Figure 21. Specifically, the soldered base 201G consists of a wiring body 211 and a block member 1 2G The device comprises a rectangular support 20 (base) on which a wiring member 210G composed of the above is formed, and solder 4 placed on the upper surface of the wiring member 210G. The upper surface of the wiring member 210G is a connection region 10c which is the interface with the solder 4. The wiring body 211 of the wiring member 210G and a pair of block members 12G are provided on the same plane.

[0196] Then, when manufacturing the semiconductor light-emitting device 1G using the soldered base 201G shown in Figure 23, first, the soldered base 201G is manufactured as shown in Figure 24. Figure 24 is a diagram illustrating the method for manufacturing the soldered base 201G according to Embodiment 2. In Figure 24, the left figure is a top view, and the right figure is a cross-sectional view.

[0197] First, as shown in Figures 24(a) to (c), a base 200G having a wiring member 210G is prepared as the first step. Specifically, a base 200G is manufactured on which a wiring member 210G, including a wiring body 211 and a block member 12G, is formed. Similar to Embodiment 1 above, in this first step, the wiring member 210G is formed by sequentially forming a first connecting member and a block member 12G that will be connected to the solder 4 when the semiconductor laser bar 3 is mounted. In this embodiment as well, a wiring member 210G is formed which includes a second metal layer 11b as the first connecting member that will be connected to the solder 4.

[0198] Specifically, first, as shown in Figure 24(a), a support 20 is prepared. Next, as shown in Figure 24(b), a wiring body 211 consisting of a first metal layer 11a, a second metal layer 11b, and a third metal layer 11c is formed on the upper surface of the support 20 in a predetermined shape. At this time, a pair of openings 211a for forming a pair of block members 12G are formed in the wiring body 211. Next, as shown in Figure 24(c), a pair of block members 12G are formed on the upper surface of the support 20. That is, a pair of block members 12G are formed on the same plane as the wiring body 211. Specifically, a block member 12G, which is a Pt layer, is formed in each of the pair of openings 211a formed in the wiring body 211. In this way, a base 200G on which a wiring member 210G composed of the wiring body 211 and block members 12G is formed can be manufactured.

[0199] Next, as shown in Figure 24(d), the second step is to place solder 4 of a predetermined shape on the upper surface of the wiring member 210G of the base 200G. Specifically, the solder 4 is formed on the third metal layer 11c (connection region 10c) of the wiring body 211. As an example, the solder 4 is in the shape of a rectangular plate, and its top view shape is a rectangle that is elongated in the longitudinal direction of the semiconductor laser bar 3. In this embodiment, the solder 4, which is an AuSn layer (Au80%), was formed by a vapor deposition method. With the above steps completed, the soldered base 201G with solder 4 formed on the upper surface of the wiring body 211 is completed.

[0200] Next, as shown in Figure 25, the semiconductor laser bar 3 is mounted on the soldered base 201G as the third step. Figure 25 is a diagram illustrating the method of mounting the semiconductor laser bar 3 on the soldered base 201G. In Figure 25, the left figure is a top view, and the right figure is a cross-sectional view.

[0201] In the third step, similar to Embodiment 1 above, first, as shown in Figure 25(a), the semiconductor laser bar 3 is placed on the solder 4 of the soldered base 201G in a junction-down position, and then, as shown in Figure 25(b), the semiconductor laser bar 3 is heated while being pressed down to melt the solder 4. After that, as the melted and liquid solder 4 hardens, the semiconductor laser bar 3 can be joined to the base 2G by the solder 4. As an example, similar to Embodiment 1 above, the soldered base 201G is heated to 250°C, then the semiconductor laser bar 3 is placed on the soldered base 201G in a junction-down position, the heating temperature of the soldered base 201G is set to 320°C and held for 10 seconds, and then cooled. After that, as shown in Figure 25(c), the gold wire 6 and the power supply wires 7a and 7b are wire-bonded. This completes the semiconductor light-emitting device 1G.

[0202] In this third step, as shown in Figure 25(b), the molten solder 4 is pressed against the semiconductor laser bar 3, so the liquid solder 4 is spread between the semiconductor laser bar 3 and the wiring member 210G by the pressure from the semiconductor laser bar 3. In this embodiment, as in the first embodiment described above, there are block regions 10b on both sides of the connection region 10c to which the solder 4 is connected, with a contact angle greater than 90 degrees to the solder 4. As a result, the liquid solder 4 that spreads in the longitudinal direction of the semiconductor laser bar 3 can be repelled by the block regions 10b, thereby preventing the solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3.

[0203] In particular, in this embodiment, the height of the connection area 10c to which the solder 4 is connected is lower than the height of the block area 10b. In other words, the height of the block area 10b is higher than the height of the connection area 10c. Specifically, the thickness of the pair of block members 12G is greater than the thickness of the wiring body 211.

[0204] This configuration allows the liquid solder 4 to be blocked by the inner sides of each of the pair of block members 12G, increasing the resistance to the liquid solder 4 from spreading in the longitudinal direction of the semiconductor laser bar 3. As a result, the spread of liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3 is suppressed, further preventing solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3.

[0205] In this embodiment as well, similar to Embodiment 1 above, in the third step, the soldered base 201G may be heated with a heater or the like while a localized heating laser beam is irradiated onto the rear end of the solder 4. Also in this embodiment as well, in the third step, the third metal layer 11c located below the solder 4 becomes the alloyed layer 11c1, which improves the bonding strength between the wiring member 10G and the solder 4.

[0206] As described above, the semiconductor light-emitting device 1G according to this embodiment, like the semiconductor light-emitting device 1 according to Embodiment 1, comprises a base 2G having a wiring member 10G, a semiconductor laser bar 3, and solder 4 disposed between the wiring member 10G and the semiconductor laser bar 3. The surface of the wiring member 10G facing the semiconductor laser bar 3 includes a connection region 10a which is the interface with the solder 4, and a block region 10b which has a contact angle with the solder 4 greater than 90 degrees. In a top view, the connection region 10a is located inside the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction of the semiconductor laser bar 3, and at least a part of the block region 10b is located between the connection region 10a and the side surface S3 of the semiconductor laser bar 3 in a top view, and the inner portion of the block region 10b in the longitudinal direction of the semiconductor laser bar 3 is located inside the side surface S3 of the semiconductor laser bar 3.

[0207] Specifically, in the semiconductor light-emitting device 1G of this embodiment, the wiring member 10G has a wiring body 11 which includes a second metal layer 11b as a first connecting member to which solder 4 is connected, and a block member 12G which is provided on the same plane as the wiring body 11, wherein at least a part of the upper surface of the block member 12G is a block region 10b, and at least a part of the upper surface of the second metal layer 11b which is the first connecting member is a connecting region 10a.

[0208] Here, Pt is used as the material for block member 12G, but the material for block member 12G is not limited to conductive materials. The material for block member 12G may be an insulating material such as SiOx or NiOx.

[0209] A semiconductor light-emitting device 1G with this configuration can be manufactured using a base 200G equipped with a wiring member 210G. In this embodiment, as described above, a soldered base 201G, on which solder 4 is pre-formed, is used to join the semiconductor laser bar 3 to the wiring member 210G via the solder 4.

[0210] Then, when mounting the semiconductor laser bar 3 using the base 200G or the soldered base 201G, the solder 4, which has melted and turned into liquid, joins the wiring member 210G of the base 200G or the soldered base 201G to the semiconductor laser bar 3.

[0211] In this embodiment, similar to Embodiment 1 described above, in the longitudinal direction of the semiconductor laser bar 3, a block region 10b (upper surface of block member 12G) exists to the side of the connection region 10a to which the solder 4 is connected, where the contact angle with respect to the solder 4 is greater than 90 degrees.

[0212] As a result, the molten solder 4 is repelled by the block region 10b, which has low wettability to the solder 4, thus suppressing the spread of the liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3. Therefore, it is possible to suppress the liquid solder 4 from spilling outward from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0213] (Modification 1 of Embodiment 2) Next, a modification 1 of Embodiment 2 will be described using Figures 26A to 26D. Figure 26A is a top view of the semiconductor light-emitting device 1H according to modification 1 of Embodiment 2. Figure 26B is a cross-sectional view of Figure 26A along the line XXVIB-XXVIB, Figure 26C is a cross-sectional view of Figure 26A along the line XXVIC-XXVIC, and Figure 26D is a cross-sectional view of Figure 26A along the line XXVID-XXVID.

[0214] In the semiconductor light-emitting device 1G according to the above embodiment 2, when the wiring member 210G and the semiconductor laser bar 3 on the soldered base 201G are joined by solder 4, the portion of the third metal layer 11c of the wiring member 210G located below the solder 4 is alloyed and becomes an alloyed layer 11c1. As a result, in the semiconductor light-emitting device 1G, the semiconductor laser bar 3 and the base 2 GThe solder 4 that joins the two was connected to the second metal layer 11b of the wiring body 11 of the wiring member 10G. In other words, in the above embodiment 2, the second metal layer 11b of the wiring body 11 is the connecting member (first connecting member) to which the solder 4 is connected, and the connection region 10a, which is the interface between the solder 4 and the wiring member 10G, was the upper surface of the second metal layer 11b.

[0215] On the other hand, in the semiconductor light-emitting device 1H according to this modified example, as shown in Figures 26A to 26D, when the wiring member 10H and the semiconductor laser bar 3 are joined by solder 4, the portion of the third metal layer 11c of the wiring member 10H located below the solder 4 remains unalloyed. As a result, the solder 4, which is an AuSn layer joining the semiconductor laser bar 3 and the base 2H, is connected to the third metal layer 11c of the wiring body 11H of the wiring member 10H. Therefore, in this modified example, the solder 4 joining the semiconductor laser bar 3 and the base 2H is connected to the third metal layer 11c of the wiring body 11H of the wiring member 10H. In other words, in this modified example, the third metal layer 11c of the wiring body 11H is the connecting member (first connecting member) connected to the solder 4, and the connecting region 10a, which is the interface between the solder 4 and the wiring member 10H, is the upper surface of the third metal layer 11c of the wiring member 10H. Specifically, since the third metal layer 11c is an Au layer, the connection region 10a is the surface of Au.

[0216] In this modified example, since the block member 12H is a Pt layer, the block region 10b is the surface of Pt. This makes it easy to realize a difference in wettability between the connection region 10a and the block region 10b. Furthermore, the block region 10b is located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0217] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1H according to this modified example and the semiconductor light-emitting device 1G according to Embodiment 2 described above have basically the same configuration.

[0218] Therefore, the semiconductor light-emitting device 1H according to this modified example provides the same effects as the semiconductor light-emitting device 1G according to Embodiment 2 described above. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0219] In this modified example, the semiconductor light-emitting device 1H does not have a third metal layer 11c located below the solder 4, but this is not limited to this. For example, a portion of the third metal layer 11c in the wiring body 11H of the wiring member 10H located below the solder 4 may be an alloyed layer 11c1.

[0220] (Modification 2 of Embodiment 2) Next, a modification 2 of Embodiment 2 will be described using Figure 27. Figure 27 shows the configuration of the semiconductor light-emitting device 1I and the base 200I for mounting the semiconductor laser bar 3 according to modification 2 of Embodiment 2. In Figure 27, (a) is a top view of the base 200I used when mounting the semiconductor laser bar 3, (b) is a top view of the semiconductor light-emitting device 1I according to this modification, (c) is a cross-sectional view along the cc line of (b), and (d) is a cross-sectional view along the dd line of (b). Note that in the semiconductor light-emitting device 1I shown in Figure 27, the gold wire 6, power supply wires 7a and 7b are omitted.

[0221] As shown in Figures 27(b) to (c), the semiconductor light-emitting device 1I according to this modified example, similar to the semiconductor light-emitting device 1G according to Embodiment 2 above, comprises a base 2I having a wiring member 10I composed of a wiring body 11 and a block member 12I, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10I and the semiconductor laser bar 3.

[0222] Furthermore, as shown in Figure 27(a), the base 200I according to this modified example comprises a wiring member 210I composed of a wiring body 11 and a pair of block members 12I, and a support 20 that supports the wiring member 210I, similar to the base 200G according to Embodiment 2 described above.

[0223] In the semiconductor light-emitting device 1G according to the above embodiment 2, the distance between the inner portions of the pair of block members 12G in the longitudinal direction of the semiconductor laser bar 3 was constant. However, in the semiconductor light-emitting device 1I according to this modified example, the distance between the inner portions of the pair of block members 12I in the longitudinal direction of the semiconductor laser bar 3 is not constant.

[0224] Specifically, as shown in Figure 27, the distance between the inner portions of a pair of block members 12I in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side of the semiconductor laser bar 3 than on the front end face S1 side. Therefore, the distance between the inner portions of a pair of block regions 10b in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side (opposite side to the front end face S1 side) than on the other side (opposite side to the front end face S1 side).

[0225] Furthermore, as the spacing of the inner portion of the block member 12I (block region 10b) changes in this manner, in the semiconductor light-emitting device 1I in this modified example, as shown in Figure 27(b), the width of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3 is larger on the rear end face S2 side than on the front end face S1 side when viewed from above. Similarly, in the base 200I in this modified example, as shown in Figure 27(a), the width of the connection region 10c in the longitudinal direction of the semiconductor laser bar 3 is larger on the rear end face S2 side than on the front end face S1 side.

[0226] In this modified example, the top view shape of each block member 12I is trapezoidal, and a pair of block members 12I are arranged so that the tapered portions (inclined portions) of the trapezoid face each other. Therefore, the distance between the inner portions of the pair of block members 12I (block region 10b) gradually increases from the front end face S1 to the rear end face S2 of the semiconductor laser bar 3. Similarly, the widths of the connection regions 10a and 10c also gradually increase from the front end face S1 to the rear end face S2 of the semiconductor laser bar 3.

[0227] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1I according to this modified example and the semiconductor light-emitting device 1G according to Embodiment 2 described above have basically the same configuration.

[0228] Therefore, the semiconductor light-emitting device 1I and base 200I according to this modified example have the same effects as the semiconductor light-emitting device 1G and base 200G according to Embodiment 2 above. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which can cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0229] Furthermore, in the semiconductor light-emitting device 1I and base 200I according to this modified example, the distance between the inner portions of the pair of block members 12I (block region 10b) in the longitudinal direction of the semiconductor laser bar 3 is greater on the rear end face S2 side than on the front end face S1 side of the semiconductor laser bar 3.

[0230] This configuration causes the liquid solder 4, which is pressed down and spread by the semiconductor laser bar 3, to be pushed outwards toward the rear end face S2, where the gap between the inner portions of the pair of block regions 10b is wider. In other words, it promotes the effect of changing the direction of the flow of liquid solder 4, which is moving toward the side surface S3 of the semiconductor laser bar 3, toward the rear end face S2 of the semiconductor laser bar 3. As a result, the solder 4 flowing in the longitudinal direction of the semiconductor laser bar 3 can be more effectively directed toward the short direction of the semiconductor laser bar 3, thereby further suppressing the leakage of liquid solder 4 from the side surface S3 of the semiconductor laser bar 3.

[0231] (Embodiment 3) Next, the configuration of the semiconductor light-emitting device 1J according to Embodiment 3 will be described using Figures 28, 29, 30A, 30B, and 30C. Figure 28 is a top view of the semiconductor light-emitting device 1J according to Embodiment 3. Figure 29 is a front view of the semiconductor light-emitting device 1J according to Mounting Form 3. Figures 30A, 30B, and 30C are cross-sectional views of the semiconductor light-emitting device 1J according to Embodiment 3 along lines XXXA-XXXA, XXXB-XXXB, and XXXC-XXXC in Figure 28, respectively.

[0232] As shown in Figures 28 to 30C, the semiconductor light-emitting device 1J according to Embodiment 3, similar to the semiconductor light-emitting device 1 according to Embodiment 1, comprises a base 2J having a wiring member 10J composed of a wiring body 11J and a block member 12J, a semiconductor laser bar 3, and solder 4 for joining the wiring member 10J and the semiconductor laser bar 3.

[0233] In the semiconductor light-emitting device 1 according to the above embodiment 1, a pair of block members 12 are provided on the wiring body 11, and the block region 10b is the upper surface of the block member 12. Specifically, the pair of block members 12 are provided on the uppermost third metal layer 11c of the multiple metal layers constituting the wiring body 11. In addition, in the above embodiment 1, the upper surface of the second metal layer 11b, which is a connecting member (first connecting member) to which the solder 4 is connected, is the connection region 10a, and the connection region 10a is located between the pair of block regions 10b (block members 12).

[0234] In contrast, in the semiconductor light-emitting device 1J according to this embodiment, the connection region 10a to which the solder 4 is connected and the block region 10b are included on the upper surface of the block member 12J of the wiring member 10J. For example, the block member 12J is a single layer of Pt, and the wiring body 11J is a single layer of Au. Therefore, the wiring member 10J has a two-layer structure consisting of the wiring body 11J and the block member 12J. The block region 10b, which has a contact angle greater than 90 degrees with respect to the solder 4, is located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0235] Furthermore, regarding configurations other than those described above, the semiconductor light-emitting device 1J according to this embodiment and the semiconductor light-emitting device 1 according to Embodiment 1 above have basically the same configuration.

[0236] Furthermore, in this embodiment, similar to Embodiment 1 described above, when the semiconductor laser bar 3 is joined to the wiring member 10J with solder 4, the metal layer in contact with the solder 4 becomes an alloyed layer 11c1 and integrates with the solder 4, so the metal layer does not exist. However, as shown in Figure 31, for the base 200J before the semiconductor laser bar 3 is joined to the wiring member 10J, a metal layer 13 exists on the block member 12J as part of the wiring member 210J in the region where the solder 4 is connected. Figure 31 is a diagram showing the configuration of the base 200J before the semiconductor laser bar 3 is joined. In Figure 31, (a) is a top view of the base 200J, and (b) is a cross-sectional view along the line bb in (a).

[0237] As shown in Figure 31, the base 200J according to this embodiment comprises a wiring member 210J composed of a wiring body 11J, a block member 12J, and a metal layer 13, and a support 20 that supports the wiring member 210J.

[0238] Furthermore, as shown in Figure 32, in the semiconductor light-emitting device 1J of this embodiment, in a cross-sectional view, the angle θ1 between the straight line connecting the outer end of the lower surface of the semiconductor laser bar 3 and the outer end of the connection region 10a and the lower surface of the semiconductor laser bar 3 is less than 45 degrees.

[0239] This configuration makes it possible to suppress the solder 4, which is melted by heating, from overflowing from the block region 10b when mounting the semiconductor laser bar 3 using the base 200J or the soldered base 201J.

[0240] Furthermore, the angle θ2 between the straight line connecting the outer end of the connection region 10a and the outer end of the gain region 3c closest to the outer end of the connection region 10a among the multiple gain regions 3c, and the lower surface of the semiconductor laser bar 3, is less than 45 degrees.

[0241] This configuration allows for sufficient heat dissipation from the outermost gain region 3c. In other words, the heat from the outermost gain region 3c can be dissipated at a level comparable to that of the other gain regions 3c.

[0242] Next, a method for manufacturing the semiconductor light-emitting device 1J according to Embodiment 3 will be described. Specifically, a method for joining the semiconductor laser bar 3 and the wiring member 10J of the base 2J using solder 4 will be described.

[0243] In this embodiment as well, as shown in Figure 33, the semiconductor laser bar 3 is mounted using a soldered base 201J on which solder 4 has been pre-formed on the support 20. Figure 33 is a diagram showing the configuration of the soldered base 201J according to Embodiment 3. In Figure 33, (a) is a top view of the soldered base 201J, and (b) is a cross-sectional view along the line bb in (a).

[0244] As shown in FIG. 33, the soldered base 201J according to this embodiment has a configuration in which solder 4 is disposed on the base 200J shown in FIG. 31. Specifically, the soldered base 201J includes a rectangular parallelepiped support 20 (base) on which a wiring member 210J composed of a wiring main body 11J, a block member 12J, and a metal layer 13 is formed, and solder 4 disposed on the upper surface of the wiring member 210J. The upper surface of the wiring member 210J is a connection region 10c that is an interface with the solder 4, and in this embodiment, it is the upper surface of the metal layer 13. The block region 10b is located on both outer sides of the connection region 10c in the longitudinal direction of the semiconductor laser bar 3.

[0245] Then, when manufacturing the semiconductor light-emitting device 1J using the soldered base 201J shown in FIG. 33, first, as shown in FIG. 34, the soldered base 201J is fabricated. FIG. 34 is a diagram for explaining a method of fabricating the soldered base 201J according to Embodiment 3. In FIG. 34, the left figure is a top view, and the right figure is a cross-sectional view.

[0246] First, as shown in (a) to (c) of FIG. 34, as a first step, a base 200J having a wiring member 210J is prepared. Specifically, a base 20J on which a wiring member 210J including a wiring main body 11J and a block member 12J is formed is fabricated. In this first step, the wiring member 210J is formed by sequentially forming the wiring main body 11J, the block member 12J, and the metal layer 13. In this embodiment, the metal layer 13 is a connection member (second connection member) connected to the solder 4.

[0247] Specifically, first, a support 20 is prepared as shown in Figure 34(a). Next, a wiring body 11J is formed in a predetermined shape on the upper surface of the support 20 as shown in Figure 34(b). The wiring body 11J is composed of a first wiring body 111 and a second wiring body 112. Next, a block member 12J is formed on the upper surface of the wiring body 11J as shown in Figure 34(c). Next, a metal layer 13 is formed on the upper surface of the block member 12J as shown in Figure 34(d). In this way, a base 200J can be manufactured on which a wiring member 210J, including the wiring body 11J, the block member 12J, and the metal layer 13, is formed. For example, the wiring body 11J is an Au layer, the block member 12J is a Pt layer, and the metal layer 13 is an Au layer.

[0248] Next, as shown in Figure 34(e), in the second step, solder 4 of a predetermined shape is placed on the upper surface of the wiring member 210J of the base 200J. Specifically, the solder 4 is placed on the metal layer 13 (connection area 10c) of the wiring member 10J. Here, the metal layer 13 and the solder 4 can be made the same size in plan view by forming them by vapor deposition using the same mask. As an example, the solder 4 is in the shape of a rectangular plate, and its top view shape is a rectangle that is elongated in the longitudinal direction of the semiconductor laser bar 3. Furthermore, the solder 4, which is an AuSn layer (Au80%), was formed by vapor deposition. With the above steps, the soldered base 201J with the solder 4 formed is completed.

[0249] Next, as shown in Figure 35, the semiconductor laser bar 3 is mounted on the soldered base 201J as the third step. Figure 35 is a diagram illustrating the method of mounting the semiconductor laser bar 3 on the soldered base 201J. In Figure 35, the left figure is a top view, and the right figure is a cross-sectional view.

[0250] In the third step, similar to the first embodiment described above, first, as shown in Figure 35(a), the semiconductor laser bar 3 is placed junction-down on the solder 4 of the soldered base 201J, and then, as shown in Figure 35(b), the semiconductor laser bar 3 is heated while being pressed down to melt the solder 4. After that, as the melted and liquid solder 4 hardens, the semiconductor laser bar 3 can be joined to the base 2J by the solder 4. Then, as shown in Figure 35(c), the gold wire 6 and the power supply wires 7a and 7b are wire-bonded. This completes the semiconductor light-emitting device 1J.

[0251] In this third step, as shown in Figure 35(b), the molten solder 4 is pressed by the semiconductor laser bar 3. As a result, the liquid solder 4 is spread between the semiconductor laser bar 3 and the wiring member 10J by the pressure from the semiconductor laser bar 3. However, in this embodiment, since both outer sides of the connection region 10c to which the solder 4 is connected are block regions 10b with a contact angle greater than 90 degrees to the solder 4, it is possible to suppress the solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3.

[0252] Furthermore, in this embodiment, as shown in Figure 35(a), the solder 4 is placed in contact with the metal layer 13, which is the uppermost layer of the wiring member 210J of the soldered base 201J. The metal layer 13 is an Au layer, and the solder 4 is an AnSn layer. Therefore, in the third step, when the soldered base 201J is heated while the semiconductor laser bar 3 is pressed down to melt the solder 4, the solder 4, which is an AuSn layer, melts on top of the metal layer 13, which is an Au layer. At this time, the Sn component of the solder 4 diffuses into the metal layer 13 and erodes the Au of the metal layer 13, so as shown in Figure 35(b), the Au and Sn alloy together, and the metal layer 13 becomes an alloyed layer 11c1 of the AuSn layer, which is a compositional transition region. In other words, the entire metal layer 13 located below the solder 4 becomes an alloyed layer 11c1 of the AuSn layer. As a result, the metal layer 13, which is the connecting member (second connecting member) to the solder 4, and the solder 4 become integrated via a compositional transition region (alloying layer 11c1). Therefore, the bonding strength between the wiring member 10J and the solder 4 in the semiconductor light-emitting device 1J can be improved, thus improving the bonding strength between the semiconductor laser bar 3 and the base 2 J It can be firmly joined together.

[0253] In particular, when the metal layer 13, which is the Au layer, becomes the alloyed layer 11c1, if the Au of the metal layer 13 is firmly bonded to the Pt of the block member 12J, which is the Pt layer, by vapor deposition or the like, the solder 4 alloys as it melts. As a result, when the alloyed layer 11c1 is completed, the shape of the bottom surface of the metal layer 13 (Au layer), which is the connecting member with the solder 4, is maintained. This suppresses the spreading of the solder 4 (a so-called pinning effect), further suppressing the spreading of the solder 4 in the longitudinal direction of the semiconductor laser bar 3.

[0254] In this embodiment as well, similar to Embodiment 1 above, in the third step, the soldered base 201J may be heated with a heater or the like while a heating laser beam is locally irradiated onto the rear end of the solder 4.

[0255] As described above, the semiconductor light-emitting device 1J according to this embodiment, like the semiconductor light-emitting device 1 according to Embodiment 1, comprises a base 2J having a wiring member 10J, a semiconductor laser bar 3, and solder 4 disposed between the wiring member 10J and the semiconductor laser bar 3. The surface of the wiring member 10J facing the semiconductor laser bar 3 includes a connection region 10a which is the interface with the solder 4, and a block region 10b which has a contact angle with the solder 4 greater than 90 degrees. In a top view, the connection region 10a is located inside the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction of the semiconductor laser bar 3, and at least a part of the block region 10b is located between the connection region 10a and the side surface S3 of the semiconductor laser bar 3 in a top view, and the inner portion of the block region 10b in the longitudinal direction of the semiconductor laser bar 3 is located inside the side surface S3 of the semiconductor laser bar 3.

[0256] Specifically, in the semiconductor light-emitting device 1J of this embodiment, the wiring member 10J has a block member 12J, and the connection region 10a and the block region 10b are included on the upper surface of the block member 12J.

[0257] A semiconductor light-emitting device 1J with this configuration can be manufactured using a base 200J equipped with a wiring member 210J. In this embodiment, as described above, a soldered base 201J, on which solder 4 is pre-formed, is used to bond the semiconductor laser bar 3 to the wiring member 210J.

[0258] Then, when mounting the semiconductor laser bar 3 using the base 200J or the soldered base 201J, the solder 4, which has been heated and turned into liquid, joins the wiring member 210J of the base 200J or the soldered base 201J with the semiconductor laser bar 3.

[0259] In this embodiment, similar to Embodiment 1 described above, in the longitudinal direction of the semiconductor laser bar 3, a block region 10b (upper surface of block member 12J) exists to the side of the connection region 10a to which the solder 4 is connected, where the contact angle with respect to the solder 4 is greater than 90 degrees.

[0260] As a result, when mounting the semiconductor laser bar 3, the liquid solder 4 is repelled by the block region 10b, which has low wettability to the solder 4, thus suppressing the spread of the liquid solder 4 in the longitudinal direction of the semiconductor laser bar 3. Therefore, it is possible to suppress the liquid solder 4 from spilling outward from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0261] Furthermore, in the semiconductor light-emitting device 1J of this embodiment, the wiring member 10J has a block member 12J, and the connection region 10a and the block region 10b are included on the upper surface of the block member 12J. Specifically, in this embodiment, a metal layer 13, which is a connecting member, is formed on the block member 12J, which has low wettability, by vapor deposition or the like to firmly bond it.

[0262] This configuration provides a so-called pinning effect, which effectively suppresses the spreading of the molten solder 4.

[0263] (Modified example of Embodiment 3) Next, a modified example of Embodiment 3 will be described using Figures 36A to 36D. Figure 36A is a top view of a semiconductor light-emitting device 1K according to a modified example of Embodiment 3. Figure 36B is a cross-sectional view along the line XXXVIB-XXXVIB in Figure 36A, Figure 36C is a cross-sectional view along the line XXXVIC-XXXVIC in Figure 36A, and Figure 36D is a cross-sectional view along the line XXXVID-XXXVID in Figure 36A.

[0264] In the semiconductor light-emitting device 1J according to the above embodiment 3, when the wiring member 210J and the semiconductor laser bar 3 on the soldered base 201J are joined by solder 4, the metal layer 13 of the wiring member 210J is alloyed to become an alloyed layer 11c1. As a result, in the semiconductor light-emitting device 1J, the semiconductor laser bar 3 and the base 2 JThe solder 4 that joins them was connected to the block member 12J of the wiring member 10J. That is, in the third embodiment, the block member 12J is a connecting member (second connecting member) connected to the solder 4, and the connection region 10a, which is the interface between the solder 4 and the wiring member 10J, was the upper surface of the block member 12J.

[0265] On the other hand, in the semiconductor light-emitting device 1K according to this modification, as shown in FIGS. 36A to 36D, when the wiring member 10K and the semiconductor laser bar 3 are joined by the solder 4, the metal layer 13 of the wiring member 10K is not alloyed and remains. That is, the wiring member 10K has a wiring main body 11J, a block member 12J formed on the wiring main body 11J, and a metal layer 13 formed on the block member 12J. As a result, the solder 4, which is an AuSn layer that joins the semiconductor laser bar 3 and the base 2K, is connected to the metal layer 13 of the wiring member 10K. That is, in this modification, the metal layer 13 of the wiring member 10K is a connecting member (second connecting member) connected to the solder 4, and the connection region 10a, which is the interface between the solder 4 and the wiring member 10K, is the upper surface of the metal layer 13 of the wiring member 10K. Specifically, since the metal layer 13 is an Au layer, the connection region 10a is the surface of Au. When a solder other than AuSn, such as Sn, is used as the solder 4, the third metal layer 11c will remain without being alloyed.

[0266] Also in this modification, since the block member 12J is a Pt layer, the block region 10b is the surface of Pt. Thereby, a difference in wettability between the connection region 10a and the block region 10b can be easily realized. Further, the block region 10b is located on both outer sides of the connection region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0267] Regarding the configuration other than the above, the semiconductor light-emitting device 1K according to this modification and the semiconductor light-emitting device 1J according to the third embodiment have basically the same configuration.

[0268] Therefore, the semiconductor light-emitting device 1K according to this modified example has the same effects as the semiconductor light-emitting device 1J according to Embodiment 3 described above. For example, in this modified example as well, the block region 10b can suppress the liquid solder 4 from overflowing from the side surface S3 of the semiconductor laser bar 3, thereby suppressing the adhesion of solder 4 to the side surface S3 of the semiconductor laser bar 3, which would cause a short circuit at the pn junction of the side surface S3 and result in leakage.

[0269] Furthermore, in the semiconductor light-emitting device 1K according to this modified example, the wiring member 10K has a block member 12J and a metal layer 13 (second connecting member) located on the block member 12J, where at least a part of the upper surface of the metal layer 13 is a connecting region 10a, and at least a part of the upper surface of the block member 12J is a block region 10b, where the block region 10b is located on both outer sides of the connecting region 10a in the longitudinal direction of the semiconductor laser bar 3.

[0270] Specifically, in this embodiment, a metal layer 13, which is a second connecting member, is formed on a block member 12J with low wettability, and is firmly bonded to it by vapor deposition or the like.

[0271] This configuration provides a so-called pinning effect, which effectively suppresses the spreading of the molten solder 4.

[0272] Furthermore, as shown in Figure 37, in the semiconductor light-emitting device 1K in this modified example, the angle θ1 between the straight line connecting the outer end of the lower surface of the semiconductor laser bar 3 and the outer end of the connection region 10a, and the lower surface of the semiconductor laser bar 3, in a cross-sectional view, is less than 45 degrees.

[0273] This configuration prevents the solder 4, which has melted due to heating, from spilling out of the block region 10b.

[0274] Furthermore, the angle θ2 between the straight line connecting the inner end of the block region 10b (which is also the outer end of the connection region 10a in this modified example) and the outer end of the gain region 3c that is closest to the outer end of the connection region 10a among the multiple gain regions 3c, and the lower surface of the semiconductor laser bar 3, is less than 45 degrees.

[0275] This configuration allows for sufficient heat dissipation from the outermost gain region 3c. In other words, the heat from the outermost gain region 3c can be dissipated at a level comparable to that of the other gain regions 3c.

[0276] In this modified example, the semiconductor light-emitting device 1K does not have a metal layer 13 located below the solder 4, but this is not limited to this. For example, a portion of the metal layer 13 may be an alloyed layer 11c1.

[0277] (modified version) The semiconductor light-emitting apparatus, etc. related to this disclosure has been described above based on Embodiments 1 to 3, but this disclosure is not limited to Embodiments 1 to 3 described above.

[0278] For example, in the semiconductor light-emitting device 1 and base 200 according to Embodiment 1 described above, the outer portion of the block member 12 (block region 10b) in the longitudinal direction of the semiconductor laser bar 3 was located outside the side surface S3 of the semiconductor laser bar 3, but this is not limited to this. Specifically, as in the semiconductor light-emitting device 1L shown in Figures 38 and 39, the outer portion of the block member 12L (block region 10b) in the wiring member 10L of the base 2L may be located inside the side surface S3 of the semiconductor laser bar 3 in the longitudinal direction. Similarly, as in the base 200L shown in Figure 40, the outer portion of the block member 12L (block region 10b) in the longitudinal direction of the semiconductor laser bar 3 may be located inside the side surface S3 of the semiconductor laser bar 3. Note that Figure 38 is a top view of the semiconductor light-emitting device 1L according to Modification 1, Figure 39 is a cross-sectional view of the semiconductor light-emitting device 1L according to Modification 1, and Figure 40 is a top view of the base 200L according to Modification 1.

[0279] Furthermore, in the above embodiment 1, the top view shape of the solder 4 formed on the soldered base 201 was a rectangle without a notch, but this is not limited to this.

[0280] For example, as shown in Figure 41, the soldered base 201M, the top view shape of the solder 4M may be a rectangle with a notch 4Ma formed therein. In other words, there may be areas in the solder 4M where no solder is formed. When mounting the semiconductor laser bar 3, it is preferable to form the notch 4Ma in areas of the solder 4M that are compressed by the semiconductor laser bar 3, in other words, in areas with high element height such as the ridge. Also, the solder 4 in the notch 4Ma is directed towards the rear. M To facilitate the flow of solder, the notch 4Ma is preferably formed to extend in an elongated shape from the long side of the rear end face S2 of the semiconductor laser bar 3 toward the front end face S1. Furthermore, if the semiconductor laser bar 3 has a shape in which the central part is curved upward, the amount of compression increases towards the ends of the semiconductor laser bar 3, so the notch 4Ma should be formed near both ends of the solder 4M in the longitudinal direction of the semiconductor laser bar 3. Conversely, if the semiconductor laser bar 3 has a shape in which the central part is curved downward, the notch 4Ma should be formed in the center in the longitudinal direction. In addition, the width of the notch 4Ma should increase as the solder 4M advances toward the rear end face S2. By mounting the semiconductor laser bar 3 using the soldered base 201M with the configuration shown in Figure 41, the molten, liquid solder 4M can easily flow toward the rear end face S2 of the semiconductor laser bar 3. As a result, as shown in Figure 41, the semiconductor light-emitting device 1M can be easily formed on the rear end of the solder 4M, with a rear extension portion 4a extending outward from the rear end face S2 of the semiconductor laser bar 3.

[0281] Furthermore, as shown in Figure 42, the solder base 201N, it is preferable that multiple notches 4Ma in the solder 4N are formed periodically along the longitudinal direction of the semiconductor laser bar 3. In particular, when mounting the semiconductor laser bar 3, the solder 4 N Since the load is applied from areas other than the notch 4Ma, it is preferable that the notch 4Ma and the gain region of the semiconductor laser bar 3 overlap. Because the gain region in the semiconductor laser bar 3 is formed periodically, the load on the notch 4Ma will be reduced if it has a periodicity that is an integer multiple of that period.

[0282] By mounting the semiconductor laser bar 3 using the soldered base 201N with the configuration shown in Figure 42, the rear extension portion 4a formed on the solder 4N will have a recess in the vicinity of the side surface S3 of the semiconductor laser bar 3 that is recessed toward the rear end surface S2, as shown in the semiconductor light-emitting device 1N in Figure 42. Specifically, multiple such recesses are formed periodically along the longitudinal direction of the semiconductor laser bar 3 in the top view. For example, a wave-shaped uneven surface is formed at the rear end of the rear extension portion 4a in plan view. Similarly, it is highly effective if these recesses are also formed periodically.

[0283] Furthermore, in the above embodiment 1, the support 20 of the base 2 of the semiconductor light-emitting device 1 was an insulator, but it is not limited to this. For example, as in the semiconductor light-emitting device 1O shown in Figure 43, the support 20O of the base 2O may be a conductor such as a metal block. This electrically connects the wiring body 11 formed on the upper surface of the support 20O to the support 20O. In this case, the support 20O may be an anode electrode made of a plate-shaped copper block, and the cathode electrode 9b made of a plate-shaped copper block may be joined to the n-side electrode of the semiconductor laser bar 3 via a gold bump 9a. At this time, since the semiconductor laser bar 3 is subjected to the load when the copper block is mounted, it is preferable that the gold bump 9a be positioned so as not to overlap with the gain region 3c of the semiconductor laser bar 3. By using the configuration of the semiconductor light-emitting device 1O shown in Figure 43, the gold wire 6, power supply wires 7a and 7b become unnecessary, and the semiconductor laser bar 3 can be sandwiched between the pair of copper blocks, so the heat generated by the semiconductor laser bar 3 can be effectively dissipated.

[0284] Furthermore, the configurations shown in Figures 38 to 43 can also be applied to each of the modifications of Embodiment 1, Embodiments 2 and 3, and each of the modifications of Embodiments 2 and 3.

[0285] In addition, this disclosure also includes forms that can be obtained by applying various modifications to the above embodiments 1 to 3 as conceived by those skilled in the art, and forms that can be realized by arbitrarily combining the components and functions of each embodiment without departing from the spirit of this disclosure. [Industrial applicability]

[0286] The semiconductor light-emitting device described herein can be applied to light sources for various products. [Explanation of symbols]

[0287] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1I, 1J, 1K, 1L, 1M, 1N, 1O Semiconductor light-emitting device 2, 2A, 2B, 2C, 2E, 2G, 2H, 2I, 2J, 2K, 2L, 2O base 3. 3D semiconductor laser bar 3a Ridge section 3b Insulating film 3c gain region 4, 4M, 4N solder 4a Rear extension 4Ma Notch 5 Pad electrodes 6 gold wire 7a, 7b Power supply wires 8 Laser-side blocking member 9a Gold Bump 9b Cathode electrode 10, 10A, 10B, 10C, 10E, 10G, 10H, 10I, 10J, 10K, 10L Wiring components 10a, 10c connection area 10a1 Extension of connection area 10b Block region 10b1 Front side block area 11, 11A, 11B, 11H, 11J Wiring Body 11a 1st metal layer 11b Second metal layer 11c 3rd metal layer 11c1 Alloyed layer 12, 12C, 12E, 12G, 12H, 12I, 12J, 12L Block members 12a Connecting part 13 Metal layer 20, 20O support 111 First Wiring Body 112 Second Wiring Unit 200, 200C, 200E, 200G, 200I, 200J, 200L base 201, 201C, 201G, 201I, 201J, 201M, 201N Soldered base 210, 210C, 210E, 210G, 210J, 210I Wiring components 211 Wiring Unit 211a opening 300 Heater S1 Front end face S2 Rear end face S3 Side

Claims

1. A base having wiring components, A semiconductor laser bar with end-face emission having pad electrodes and multiple gain regions arranged along the longitudinal direction, The system includes solder, which is positioned between the wiring member and the semiconductor laser bar and connected to the wiring member and the pad electrode, The semiconductor laser bar has a front end face which emits light, a rear end face which is the end face opposite to the front end face, and a side face which is the end face in the longitudinal direction. The semiconductor laser bar is connected to the base in a junction-down manner, with the pad electrode side facing the base. The surface of the wiring member facing the semiconductor laser bar includes a connection region which is the interface with the solder and has a contact angle of less than 90 degrees with respect to the liquid solder, and a block region which has a contact angle of greater than 90 degrees with respect to the liquid solder. The connection region is located on the inside of the side surface in the longitudinal direction when viewed from above. At least a portion of the block region is located between the connecting region and the side surface in a top view, The inner portion of the block region in the longitudinal direction is located inward from the side surface, The solder has a rear extension that extends outward from the rear end face when viewed from above, and does not extend outward from the side surface. Semiconductor light-emitting device.

2. The wiring member comprises a first connecting member and a pair of block members located above the first connecting member. The first connecting member and the pair of block members are made of different materials. At least a portion of the upper surface of each of the pair of block members is the block region, The first connecting member, in a top view, has the connecting region between the pair of block members. The semiconductor light-emitting apparatus according to claim 1.

3. The wiring member has a first connecting member and a pair of block members provided on the same surface. The first connecting member and the pair of block members are made of different materials. At least a portion of the upper surface of the first connecting member is the connection area, The pair of block members are located outside one of the connection regions in the longitudinal direction and outside the other. At least a portion of the upper surface of the pair of block members constitutes the block region. The semiconductor light-emitting apparatus according to claim 1.

4. The wiring member has a block member made of a conductive layer, The connection region and the block region are included in the upper surface of the block member. The semiconductor light-emitting apparatus according to claim 1.

5. The wiring member comprises a block member and a second connecting member located on the block member. The block member and the second connecting member are made of different materials. At least a portion of the upper surface of the second connecting member is the connection area, At least a portion of the upper surface of the block member is the block region, The block region is located on both outer sides of the connection region in the longitudinal direction. The semiconductor light-emitting apparatus according to claim 1.

6. The height position of the connection area is lower than the height position of the block area. The semiconductor light-emitting apparatus according to claim 3.

7. In a cross-sectional view, the width of the interface between the solder and the semiconductor laser bar is greater than the width of the interface between the solder and the wiring member. A semiconductor light-emitting apparatus according to any one of claims 1 to 6.

8. In a cross-sectional view, the angle between the straight line connecting the inner end of the lower surface of the block member and the outer end of the gain region closest to the block member among the multiple gain regions, and the lower surface of the semiconductor laser bar, is less than 45 degrees. The semiconductor light-emitting apparatus according to claim 2 or 3.

9. In a cross-sectional view, the angle between the line connecting the outer end of the connection region and the outer end of the gain region closest to the outer end of the connection region among the multiple gain regions, and the lower surface of the semiconductor laser bar, is less than 45 degrees. The semiconductor light-emitting apparatus according to claim 4.

10. In a cross-sectional view, the angle between the line connecting the inner end of the block region and the outer end of the gain region closest to the block region among the plurality of gain regions, and the lower surface of the semiconductor laser bar, is less than 45 degrees. The semiconductor light-emitting apparatus according to claim 5.

11. The angle between the straight line connecting the outer end of the lower surface of the semiconductor laser bar and the inner end of the block region, and the lower surface of the semiconductor laser bar, is less than 45 degrees. A semiconductor light-emitting apparatus according to any one of claims 2 to 5.

12. In the above top view, the connection region has a connection region extension portion that extends outward from the rear end face of the semiconductor laser bar. The rear extension portion of the solder is connected to the connection region extension portion. In the short-side direction of the semiconductor laser bar, the height of the rear-side extension of the solder increases and then decreases as it moves away from the semiconductor laser bar. A semiconductor light-emitting apparatus according to any one of claims 1 to 11.

13. The distance between the inner portions of the pair of block members in the longitudinal direction is greater on the rear end face side than on the front end face side. The semiconductor light-emitting apparatus according to claim 2 or 3.

14. In a top view, the width of the connection region in the longitudinal direction is greater on the rear end face side than on the front end face side. A semiconductor light-emitting apparatus according to any one of claims 1 to 13.

15. In a top view, the block region extends outward from the portion directly below the semiconductor laser bar towards the rear end face, and the end of the side surface of the semiconductor laser bar towards the rear end face overlaps the block region. A semiconductor light-emitting apparatus according to any one of claims 1 to 14.

16. In a top view, the rear extension of the solder has a recess that is recessed toward the rear end face near the side surface of the semiconductor laser bar. A semiconductor light-emitting apparatus according to any one of claims 1 to 15.

17. In a top view, the recesses are formed periodically along the longitudinal direction. The semiconductor light-emitting apparatus according to claim 16.

18. Furthermore, the semiconductor laser bar has an electrode pad on the base side and a pair of laser-side block members provided at both outer ends of the electrode pad in the longitudinal direction. The electrode pad and the pair of laser-side block members are made of different materials. Each surface of the pair of laser-side block members has a contact angle greater than 90 degrees with respect to the liquid solder. A semiconductor light-emitting apparatus according to any one of claims 1 to 17.

19. In a top view, the distance between the inner ends of the pair of laser-side block members is greater on the rear end face side than on the front end face side. The semiconductor light-emitting apparatus according to claim 18.

20. In a top view, the block region includes the front-side block region, located on the front end face side of the connecting region. A semiconductor light-emitting apparatus according to any one of claims 1 to 19.

21. The aforementioned solder consists of AuSn, The aforementioned block region is Pt, SiO ｘ or NiO ｘ It is the surface, The aforementioned connection region is the surface of Au. The semiconductor light-emitting apparatus according to claim 2 or 3.

22. The aforementioned solder consists of AuSn, The aforementioned block region is the surface of Pt, The aforementioned connection region is the surface of Au. The semiconductor light-emitting apparatus according to claim 4 or 5.

23. In the vicinity of the connection region, at least a portion of the wiring member and the solder are integrated via a compositional transition region. The semiconductor light-emitting apparatus according to claim 2 or 3.

24. The aforementioned semiconductor laser bar is made of nitride semiconductor material, The semiconductor laser bar is curved in the longitudinal direction. A semiconductor light-emitting apparatus according to any one of claims 1 to 23.

25. The first step is to prepare a base having wiring components, A second step involves placing solder on the aforementioned wiring member, The third step includes: placing an end-face emitting semiconductor laser bar having pad electrodes on the solder in a junction-down position with the pad electrode side facing the base; heating the semiconductor laser bar while pressing it down to melt the solder; and joining the semiconductor laser bar to the base with the solder. The semiconductor laser bar has a plurality of gain regions arranged along its longitudinal direction, The semiconductor laser bar has a front end face which emits light, a rear end face which is the end face opposite to the front end face, and a side face which is the end face in the longitudinal direction. In the first step described above, the wiring member is formed by sequentially forming the first connecting member and the block member. The first connecting member and the block member are made of different materials. The upper surface of the wiring member includes a connection region where the contact angle with respect to the liquid solder is less than 90 degrees, and block regions located on both outer sides of the connection region in the longitudinal direction where the contact angle with respect to the liquid solder is greater than 90 degrees. In the second step, the solder is placed on the connection area. In the third step, the solder extends outward from the rear end face, but does not extend outward from the side surface. The solder is connected to the wiring member and the pad electrode. A method for manufacturing a semiconductor light-emitting device.

26. The first step is to prepare a base having wiring components, A second step involves placing solder on the aforementioned wiring member, The third step includes: placing an end-face emitting semiconductor laser bar having pad electrodes on the solder in a junction-down position with the pad electrode side facing the base; heating the semiconductor laser bar while pressing it down to melt the solder; and joining the semiconductor laser bar to the base with the solder. The semiconductor laser bar has a plurality of gain regions arranged along its longitudinal direction, The semiconductor laser bar has a front end face which emits light, a rear end face which is the end face opposite to the front end face, and a side face which is the end face in the longitudinal direction. In the first step described above, the wiring member is formed by sequentially forming the block member and the second connecting member. The block member and the second connecting member are made of different materials. The upper surface of the wiring member includes a connection region where the contact angle with respect to the liquid solder is less than 90 degrees, and block regions located on both outer sides of the connection region in the longitudinal direction where the contact angle with respect to the liquid solder is greater than 90 degrees. In the second step, the solder is placed on the connection area. In the third step, the solder extends outward from the rear end face, but does not extend outward from the side surface. The solder is connected to the wiring member and the pad electrode. At least a portion of the second connecting member and the solder are integrated via a compositional transition region. A method for manufacturing a semiconductor light-emitting device.

27. In the third step, while heating the base, a heating laser beam is irradiated onto the solder located in the region outside the rear end face of the semiconductor laser bar. In the third step, the temperature of the portion of the solder near the rear end face is higher than the temperature of the portion of the solder near the front end face. A method for manufacturing a semiconductor light-emitting device according to claim 25 or 26.

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