Laminate, method for manufacturing a laminate, and laminate substrate, method for manufacturing a laminate substrate.

Abstract

To provide a production method of a laminate base plate having excellent adhesiveness between an insulating board and a metal circuit in which the metal circuit disposed on the insulating board and a projection protruding to the further outside than a principal surface of the insulating board are integrally formed.SOLUTION: A production method of a laminate base plate includes: laminating a metal plate, a semi-cured resin impregnated plate, and a conductive plate in this order; obtaining a laminate by curing a semi-cured resin through heat treatment of the semi-cured resin impregnated plate at a temperature of 200°C or lower and by bonding the cured product of the semi-cured resin impregnated plate, the metal plate, and the conductive plate; and forming a wiring pattern on the conductive plate of the laminate. The conductive plate has a base plate part existing on the semi-cured resin impregnated plate and a part existing outside of a principal surface of the semi-cured resin impregnated plate in a top view.SELECTED DRAWING: None

Description

[Technical Field]

[0001] This disclosure relates to a laminate, a method for manufacturing a laminate, and a laminate substrate, and a method for manufacturing a laminate substrate. [Background technology]

[0002] Power devices, transistors, thyristors, and CPUs are required to efficiently dissipate the heat generated during use. To address this need, efforts are being made to improve heat dissipation in printed circuit boards (PCBs) that incorporate metal circuits, by increasing the thermal conductivity of the insulating layer constituting the PCB or by attaching the PCB to a heatsink via an electrically insulating thermal interface material.

[0003] As described above, the insulating layer uses a ceramic plate made of silicon nitride or the like. A brazing material is used to bond the ceramic plate to the metal circuit, and bonding requires heating at a relatively high temperature. Therefore, if the area of ​​the laminated metal plate (the plate before the formation of the metal circuit pattern) is larger than the area of ​​the ceramic plate, deformation of the metal plate may occur due to its own weight during heating. If such deformation occurs, delamination and poor contact may occur between the ceramic plate and the metal circuit. For this reason, the shape of the laminated metal plate is limited to a shape that fits within the area of ​​the main surface of the ceramic plate. For this reason, when connecting to an external circuit, it is necessary to provide separate terminals on the metal plate or metal circuit after bonding the ceramic plate and the metal plate.

[0004] As an insulating layer having heat dissipation and adhesive properties, a composite material composed of ceramics such as boron nitride and a semi-cured resin is also used instead of a ceramic plate. Furthermore, the use of a composite sheet such as a semi-cured resin-impregnated plate obtained by impregnating a porous ceramic plate (for example, a boron nitride sintered plate) with a semi-cured resin is also being considered (see, for example, Patent Document 1). In addition, in a laminated substrate having a metal circuit and a boron nitride sintered plate impregnated with a semi-cured resin, it is also being considered to reduce the thermal resistance of the laminated substrate and improve heat dissipation by directly contacting the primary particles constituting the boron nitride sintered plate with the metal circuit (see, for example, Patent Document 2). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2014 / 196496 [Patent Document 2] Japanese Patent Publication No. 2016-103611 [Overview of the project] [Problems that the invention aims to solve]

[0006] Even when using composite sheets as described above, the shape of the laminated metal plates is such that it fits within the area of ​​the main surface of the ceramic plate, in accordance with the manufacturing method of laminated substrates obtained by bonding each component using a brazing material. In the manufacturing of laminated substrates comprising an insulating layer and a metal circuit, if the metal circuit provided on the insulating plate and the terminals, etc., can be integrally formed when bonding the insulating plate and the metal plate, it may be possible to suppress power loss at the connection interface between the metal circuit and the external terminal, for example, and such a manufacturing method for laminated substrates would be useful.

[0007] This disclosure aims to provide a method for manufacturing a laminated substrate having excellent adhesion between an insulating plate and a metal circuit, wherein a metal circuit provided on an insulating plate and a protruding portion that protrudes outward from the main surface of the insulating plate are integrally formed. This disclosure also aims to provide a laminated substrate with low insulation and suppressed power loss in the circuit. This disclosure also aims to provide a laminate suitable for manufacturing the above-described laminated substrate and a method for manufacturing the same. [Means for solving the problem]

[0008] This disclosure provides the following [1] to

[13] .

[0009] [1] The process involves laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, The method involves heating the semi-cured resin-impregnated plate at a temperature of 200°C or lower to cure the semi-cured resin, thereby bonding the cured material of the semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate. A method for manufacturing a laminate, wherein the conductive plate, when viewed from above, has a portion located on the semi-cured resin-impregnated plate and a portion located outside the main surface of the semi-cured resin-impregnated plate. [2] The manufacturing method according to [1], wherein the length of the portion of the conductive plate that is located outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more. [3] The process involves laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, The semi-cured resin-impregnated plate is heat-treated at a temperature of 200°C or lower to cure the semi-cured resin, thereby bonding the cured material of the semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate. The process involves forming a wiring pattern on the conductive plate of the laminate, A method for manufacturing a laminated substrate, wherein the conductive plate, when viewed from above, has a substrate portion located on the semi-cured resin-impregnated plate and a portion located outside the main surface of the semi-cured resin-impregnated plate. [4] The manufacturing method according to [3], wherein the length of the portion of the conductive plate existing outside the main surface of the semi-cured resin impregnated plate is 2.0 mm or more. [5] A metal plate, a resin-filled plate provided on the metal plate, and one or more conductive parts provided on the resin-filled plate. At least one of the one or more conductive parts is a first conductive part having, in a top view, a substrate part existing on the resin-filled plate and a protruding part protruding outside the main surface of the resin-filled plate. A laminated substrate in which the side surface of the first conductive part is inclined with respect to the lamination direction. [6] The laminated substrate according to [5], wherein the amount of warpage, which is the amount of displacement of the protruding part in the direction from the conductive part toward the metal plate, is less than 0.50 mm. [7] The laminated substrate according to [5] or [6], wherein the thickness of the first conductive part is 1.5 mm or less. [8] The laminated substrate according to any one of [5] to [7], wherein the length of the protruding part is 2.0 mm or more. [9] The laminated substrate according to any one of [5] to [8], wherein the inclination angle of the side surface of the first conductive part is 35 to 85° with respect to the direction in which the main surface of the resin-filled plate extends.

[10] The laminated substrate according to any one of [5] to [9], wherein the ratio of the thickness of the first conductive part to the distance between the end of the protruding part and the end of the resin-filled plate is less than 50.0.

[11] The laminated substrate according to any one of [5] to

[10] , wherein the minimum value of the distance between the first conductive part and the conductive part adjacent to the first conductive part is 2.0 mm or less.

[12] A metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate. The laminated body, wherein the conductive plate has, in a top view, a substrate part existing on the resin-filled plate and an overhanging part existing outside the main surface of the resin-filled plate.

[13] The laminate according to

[12] , wherein the amount of warp in the direction from the conductive plate to the metal plate of the protruding portion is less than 0.30 mm.

[14] The laminate according to

[12] or

[13] , wherein the length of the protruding portion is 2.0 mm or more. [Advantages of the Invention]

[0010] According to the present disclosure, a method for manufacturing a laminated substrate excellent in adhesion between an insulating plate and a metal circuit, in which a metal circuit provided on an insulating plate and a protruding portion protruding outside the main surface of the insulating plate are integrally formed, can be provided. According to the present disclosure, a laminated substrate with low insulation and low power loss in the circuit can also be provided. According to the present disclosure, a laminate suitable for manufacturing the above-described laminated substrate and a method for manufacturing the same can also be provided. [Brief Description of the Drawings]

[0011] [Figure 1] FIG. 1 is a schematic diagram for explaining an example of a method for manufacturing a laminate and a laminated substrate. [Figure 2] FIG. 2 is a schematic diagram for explaining an example of a method for manufacturing a laminate and a laminated substrate. [Figure 3] FIG. 3 is an enlarged view of a region R shown in (c) of FIG. 2. [Figure 4] FIG. 4 is a schematic diagram showing an example of a laminated substrate. [Figure 5] FIG. 5 is an end view taken along line V-V shown in FIG. 4. [Figure 6] FIG. 6 is a plan view schematically showing an example of a laminated substrate. [Figure 7] FIG. 7 is a schematic diagram for explaining the amount of warp. [Figure 8] FIG. 8 is a schematic diagram showing a wiring pattern manufactured in an example. [Modes for Carrying Out the Invention]

[0012] The embodiments of this disclosure will be described below, with reference to the drawings as appropriate. However, the embodiments described below are illustrative examples for illustrating this disclosure and are not intended to limit this disclosure to the following. In the description, the same reference numerals will be used for elements that are the same or have the same function, and redundant explanations will be omitted as appropriate. Furthermore, unless otherwise specified, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings. In addition, the dimensional ratios of each element are not limited to those shown.

[0013] Unless otherwise specified, the materials exemplified herein may be used individually or in combination of two or more. The content of each component in a composition means the total amount of any multiple substances present in the composition, unless otherwise specified, if there are multiple substances corresponding to each component in the composition.

[0014] The laminate according to this disclosure can be suitably used to manufacture the laminated substrate according to this disclosure. Furthermore, the laminated substrate according to this disclosure may be used, for example, as a printed circuit board.

[0015] One embodiment of the method for manufacturing a laminate includes laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in that order, and obtaining a laminate by heat-treating the semi-cured resin-impregnated plate at a temperature of 200°C or less to cure the semi-cured resin, thereby bonding the cured semi-cured resin-impregnated plate with the metal plate and the conductive plate. In the above manufacturing method, the conductive plate has, in a top view, a portion that is on the semi-cured resin-impregnated plate and a portion that is outside the main surface of the semi-cured resin-impregnated plate. A laminated substrate can also be manufactured by processing a wiring pattern onto the laminate. That is, one embodiment of the method for manufacturing a laminated substrate further includes forming a wiring pattern on the conductive plate of the laminate. First, the method for manufacturing a laminate will be described.

[0016] In the above-described method for manufacturing the laminate, when viewed from above, the conductive plates are laminated such that a portion of them extends beyond the main surface of the semi-cured resin-impregnated plate. Furthermore, by using the semi-cured resin-impregnated plate, it is possible to manufacture the laminate at a lower temperature compared to conventional soldering. By adopting this configuration, it is possible to obtain a laminate in which a metal circuit provided on an insulating plate and a protruding portion that extends beyond the main surface of the insulating plate are integrally formed. In addition, because the connection is made at a relatively low temperature, thermal deformation of the conductive plate is suppressed even if there is a portion that protrudes outside the main surface of the semi-cured resin-impregnated plate, and bending of the conductive plate in the resulting laminate can be suppressed.

[0017] Figures 1 and 2 are schematic diagrams illustrating an example of a method for manufacturing a laminate and a laminated substrate. Figures 2(a), (b), and (c) schematically show cross-sections corresponding to Figures 1(a), (b), and (c), respectively. Figure 1(a) shows a schematic diagram of an intermediate 100 having a metal plate 20 and a semi-cured resin-impregnated plate 30 laminated on the metal plate 20, with a conductive plate 50 further laminated on the semi-cured resin-impregnated plate 30 side. Figure 1(b) shows a schematic diagram of a laminate 101 having a metal plate 20, a cured product of the semi-cured resin-impregnated plate 30 (resin-filled plate 40), and a conductive plate 50 in that order, which is prepared by heat-treating the intermediate 100 to melt the semi-cured resin constituting the semi-cured resin-impregnated plate 30 and further curing it.

[0018] The metal plate 20 can be used without particular limitations as long as it is made of metal and has a plate-like shape. Examples of materials for the metal plate 20 include aluminum and copper. From the viewpoint of further improving wettability with the semi-cured resin, the material of the metal plate 20 preferably contains copper.

[0019] The shape of the main surface of the metal plate 20 is the same as the shape of the main surface of the semi-hardened resin-impregnated plate 30.

[0020] The thickness of the metal plate 20 may be, for example, 0.1 to 3.0 mm, 0.2 to 2.5 mm, or 0.3 to 2.0 mm. By keeping the lower limit of the thickness of the metal plate 20 within the above range, deformation of the metal plate 20 can be suppressed during the manufacturing of the laminate, and deformation can also be prevented during handling. By keeping the upper limit of the thickness of the metal plate 20 within the above range, it becomes possible to manufacture a small laminate while ensuring sufficient heat dissipation for the entire laminate.

[0021] The semi-cured resin-impregnated plate 30 includes a semi-cured resin portion composed of semi-cured resin. The semi-cured resin may be a semi-cured product (B stage) of a resin composition containing a main agent and a curing agent. The semi-cured product is in which the curing reaction of the resin composition has partially progressed. The semi-cured product can be further cured by subsequent curing treatment. The cured product (C stage) of the above-mentioned resin composition refers to a state in which the curing reaction of the resin composition has progressed sufficiently, and includes a completely cured state.

[0022] The semi-cured resin may include a thermosetting resin, etc., produced by the reaction of the main component and curing agent in the resin composition. The semi-cured product may also include unreacted main component and curing agent, etc., in addition to the thermosetting resin as a resin component. The fact that the semi-cured resin portion contained in the semi-cured resin-impregnated plate 30 is a semi-cured product (B stage) before becoming a cured product (C stage) can be confirmed, for example, by differential scanning calorimeter.

[0023] The upper limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 50% or less, 48% or less, 46% or less, or 42% or less. When the upper limit of the curing rate of the semi-cured resin is within the above range, the semi-cured resin melts appropriately when bonding with the metal plate 20 and the conductive plate 50, allowing the molten resin to spread more sufficiently to the bonding interface, resulting in better adhesion. The lower limit of the curing rate of the semi-cured resin contained in the semi-cured resin-impregnated plate 30 may be, for example, 20% or more, 23% or more, or 25% or more. When the lower limit of the curing rate of the semi-cured resin is within the above range, excessive flow of molten semi-cured resin from the semi-cured resin-impregnated plate 30 is suppressed when the semi-cured resin-impregnated plate 30 is heated and bonded with the metal plate 20 and the conductive plate 50, enabling a higher level of compatibility between the adhesion of the semi-cured resin-impregnated plate and the insulation properties of the resulting laminated substrate. The curing rate of the semi-cured resin may be adjusted within the above range, for example, 20-50%.

[0024] The curing rate of a semi-cured resin can be determined by measurement using a differential scanning calorimeter. First, the amount of heat generated per unit mass Q when 2 mg of an uncured resin composition is completely cured is measured. Then, 10 mg of a semi-cured resin sample is heated in the same manner from a semi-cured resin-impregnated plate 30, and the amount of heat generated per unit mass R when it is completely cured is determined. In addition, the content c (mass%) of the semi-cured resin is determined by cross-sectional SEM image analysis and thermogravimetric differential thermal analysis (TG-DTA) of the semi-cured resin-impregnated plate 30 that was measured, and the amount of heat generated by the semi-cured resin is calculated from the determined semi-cured resin content and the amount of heat generated R obtained from the above measurement. Then, the curing rate of the semi-cured resin impregnated in the semi-cured resin-impregnated plate 30 is determined by the following formula (1). Note that whether or not the semi-cured resin has completely cured can be confirmed by the termination of heat generation in the heat generation curve obtained by differential scanning calorimeter measurement. The curing rate (%) of a semi-cured resin = {1 - [(R / c) × 100] / Q} × 100 ... Equation (1)

[0025] The semi-cured resin may include, for example, at least one selected from the group consisting of epoxy resin, cyanate resin, phenolic resin, melamine resin, urea resin, bismaleimide resin, thermosetting polyimide, maleimide resin, maleimide-modified resin, silicone resin, silicone rubber, unsaturated polyester, polyurethane, and alkyd resin.

[0026] The semi-cured resin-impregnated plate 30 may, for example, consist of a porous nitride sintered plate and a semi-cured resin filling the pores of the nitride sintered plate.

[0027] A nitride sintered body has nitride particles and pores formed by sintering primary nitride particles together. The nitride may contain at least one nitride selected from the group consisting of, for example, boron nitride, aluminum nitride, and silicon nitride. Examples of nitride sintered plates include boron nitride sintered plates, aluminum nitride sintered plates, and silicon nitride sintered plates. A nitride sintered plate is preferably a boron nitride sintered plate because it is easier to form pores for resin filling and has excellent elastic modulus for long-term reliability.

[0028] The upper limit of the median pore diameter of the nitride sintered plate may be, for example, 4.0 μm or less, 3.8 μm or less, 3.6 μm or less, 3.4 μm or less, 3.2 μm or less, or 3.0 μm or less. Because such nitride sintered plates have small pore sizes, the contact area between nitride particles becomes sufficiently large, and the thermal conductivity can be increased. The lower limit of the median pore diameter of the nitride sintered plate may be, for example, 1.5 μm or more, 1.6 μm or more, 1.7 μm or more, 1.8 μm or more, 1.9 μm or more, or 2.0 μm or more. By having the lower limit of the median pore diameter within the above range, the semi-cured resin can be penetrated more easily, and the amount of molten resin used during laminate manufacturing can be made more sufficient. The median pore diameter of the pores in the nitride sintered plate may be adjusted within the above range, for example, 1.5 to 4.0 μm or 2.0 to 3.0 μm.

[0029] The median pore diameter of a nitride sintered plate can be measured using the following procedure. First, the semi-cured resin-impregnated plate or resin-filled plate to be measured is heated to remove the semi-cured resin and resin (cured resin). Then, using a mercury porosimeter, the pore diameter distribution is determined as the nitride sintered plate is pressurized while increasing the pressure from 0.0042 MPa to 206.8 MPa. When the horizontal axis is the pore diameter and the vertical axis is the cumulative pore volume, the pore diameter at which the cumulative pore volume reaches 50% of the total pore volume is the median pore diameter. For example, a mercury porosimeter manufactured by Shimadzu Corporation can be used.

[0030] The upper limit of the porosity of the nitride sintered plate, that is, the ratio of the volume of pores in the nitride sintered plate, may be, for example, 65 vol% or less, 60 vol% or less, or 58 vol% or less. By keeping the upper limit of the porosity of the nitride sintered plate within the above range, the decrease in the mechanical strength of the nitride sintered plate can be more sufficiently suppressed, and a semi-cured resin-impregnated plate with better handling properties can be provided. The lower limit of the porosity of the nitride sintered plate may be, for example, 40 vol% or more, 42 vol% or more, 44 vol% or more, or 45 vol% or more. By keeping the upper limit of the porosity of the nitride sintered body within the above range, the semi-cured resin content can be increased, and the adhesion to metal plates and conductive plates can be further improved. The porosity of the nitride sintered plate may be adjusted within the above range, for example, 40 to 65 vol% or 40 to 60 vol%.

[0031] The porosity of a nitride sintered plate can be calculated from the volume and mass of the nitride sintered plate by determining the bulk density [Y(kg / m³)]. 3 )] is calculated, and this bulk density and the theoretical density of nitride [X (kg / m³) are used. 3 From this, it can be determined by the following formula (2). The nitride sintered plate may contain at least one selected from the group consisting of boron nitride, aluminum nitride, and silicon nitride. In the case of boron nitride, the theoretical density X is 2280 kg / m³ 3 In the case of aluminum nitride, the theoretical density X is 3260 kg / m³. 3 In the case of silicon nitride, the theoretical density X is 3170 kg / m³. 3 That is the case. Pore ratio (volume %) = [1 - (Y / X)] × 100 … Equation (2)

[0032] The thickness of the nitride sintered plate may be, for example, 5.0 mm or less, 3.0 mm or less, or 2.0 mm or less. The lower limit of the thickness of the nitride sintered plate may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more. The thickness of the nitride sintered plate is measured along the direction perpendicular to the main surface. When the thickness is not constant, any 10 points are selected for thickness measurement, and the average value thereof may be within the above range. Note that the thickness of the semi-cured resin impregnated plate and the resin filled plate corresponds to the thickness of the nitride sintered plate.

[0033] The size of the main surface of the semi-cured resin impregnated plate 30 is not particularly limited. For example, it may be 50 mm 2 or more, 200 mm 2 or more, 500 mm 2 or more, 800 mm 2 or more, or 1000 mm 2 or more. The size of the main surface of the semi-cured resin impregnated plate 30 may be, for example, 250000 mm 2 or less, or 150000 mm 2 or less. The sizes of the pair of main surfaces of the semi-cured resin impregnated plate 30 are generally the same, but do not necessarily have to exactly match and may be different from each other.

[0034] <000019​​​​​​​​In Figure 1, the main surface of the conductive plate 50 is shown as a rectangle. However, the shape of the main surface of the conductive plate 50 is not limited to this; for example, it may be a polygon other than a rectangle, a circle, or a shape with a part cut out.

[0037] The upper limit of the thickness of the conductive plate 50 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. The lower limit of the thickness of the conductive plate 50 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. The thickness of the conductive plate 50 is measured along a direction perpendicular to the main surface, and if the thickness is not constant, the thickness is measured at any 10 locations, and the average value should be within the above range.

[0038] Conventionally, when laminating a component corresponding to the conductive plate 50 onto a ceramic plate, the component has not been laminated in such a way that it protrudes beyond the main surface of the ceramic plate, in order to avoid deformation of the component. In contrast, the manufacturing method of the laminate according to the present disclosure offers a greater degree of freedom in the lamination position of the conductive plate 50. The conductive plate 50 can be arranged such that, in a top view, it has a portion 50a that exists on the semi-cured resin-impregnated plate and a portion 50b that exists outside the main surface of the semi-cured resin-impregnated plate 30.

[0039] In the manufacturing method according to this disclosure, the length L0 of the portion 50b of the conductive plate 50 that is located outside the main surface of the semi-cured resin-impregnated plate 30 can be adjusted according to the intended use of the laminate and the laminated substrate. The lower limit of the length L0 of the portion 50b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L0 within the above range, it is possible to increase the design freedom of the conductive protrusions of the resulting laminated substrate, for example, the protrusions can be used as connection terminals for external devices. The upper limit of the length L0 may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. By setting the upper limit of the length L0 within the above range, the occurrence of warping in the conductive plate 50 and the metal circuit layer 60 can be further suppressed. The length L0 of the portion 50b may be adjusted within the above range, for example, 2.0 to 15.0 mm, or 3.0 to 13.0 mm.

[0040] In this specification, the length L0 of the portion 50b of the conductive plate 50 that exists outside the main surface of the semi-cured resin-impregnated plate 30 refers to the maximum distance between the end 30E of the semi-cured resin-impregnated plate 30 and the metal plate 20 and the end 50E of the portion 50b of the conductive plate 50, when the intermediate body 100 having the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50 is observed from the metal plate 20 side. If the main surface of the semi-cured resin-impregnated plate 30 is rectangular and the conductive plate 50 has portions that exist outside the main surface on both sides of the opposing edges of the main surface, the end 30E of the semi-cured resin-impregnated plate 30 shall be the end on the side where the end 50E of the conductive plate 50 exists, which is the subject of the measurement of the length L0.

[0041] After positioning the conductive plate 50 such that a portion of it protrudes outside the main surface of the semi-cured resin-impregnated plate 30, the semi-cured resin-impregnated plate 30 is heated to melt the semi-cured resin, and then it is cured.

[0042] The upper limit of the heat treatment temperature when melting and curing the semi-cured resin is 200°C or less, but may be, for example, 195°C or less, 190°C or less, or 180°C or less. By keeping the upper limit of the heat treatment temperature within the above range, deformation of the conductive plate 50 in the resulting laminate can be more sufficiently suppressed, and the occurrence of warping in the conductive plate 50 and the metal circuit layer 60 can be more sufficiently suppressed. The lower limit of the heat treatment temperature may be, for example, 150°C or higher, 160°C or higher, or 170°C or higher. By keeping the lower limit of the heat treatment temperature within the above range, the curing of the semi-cured resin can be made more sufficient, and the adhesion strength between the resin-filled plate 40 and the metal plate 20 and conductive plate 50 in the resulting laminate can be further improved. The heat treatment temperature may be adjusted within the above range, for example, 150 to 200°C or 160 to 195°C.

[0043] The time for the heat treatment of the semi-cured resin-impregnated plate 30 described above can be adjusted considering the curing rate of the semi-cured resin and the manufacturing time including other processes. The lower limit of the heat treatment time may be, for example, 2.0 hours or more, 2.5 hours or more, 3.0 hours or more, or 3.5 hours or more. By setting the lower limit of the time within the above range, the curing of the semi-cured resin can be made sufficient, and the reliability of the resulting laminate and laminated substrate can be further improved. The upper limit of the heat treatment time may be, for example, 6.0 hours or less, 5.5 hours or less, 5.0 hours or less, or 4.5 hours or less. By setting the upper limit of the time within the above range, the curing of the semi-cured resin can be made more reliable while preventing thermal degradation of the resin. The heat treatment time may be adjusted within the above range, for example, 2.0 to 6.0 hours, or 2.5 to 5.5 hours.

[0044] The heat treatment of the semi-cured resin-impregnated plate 30 described above can also be performed by applying pressure in the lamination direction of the metal plate 20, the semi-cured resin-impregnated plate 30, and the conductive plate 50. In this case, the upper limit of the pressure may be, for example, 20.0 MPa or less, 17.5 MPa or less, 15.0 MPa or less, or 12.5 MPa or less. By having the upper limit of the pressure within the above range, the occurrence of cracks in the semi-cured resin-impregnated plate can be further suppressed and sufficient pressure can be applied for bonding. The lower limit of the pressure may be, for example, 1.0 MPa or more, 2.0 MPa or more, 3.0 MPa or more, or 4.0 MPa or more. By having the lower limit of the pressure within the above range, the adhesive strength between the resin-filled plate 40 and the metal plate 20 and conductive plate 50 in the resulting laminate can be further improved.

[0045] In the above manufacturing method, from the viewpoint of further suppressing deflection of the conductive plate 50, a buffer material may be placed on the semi-cured resin-impregnated plate 30 side of the portion 50b of the conductive plate 50 that is outside the main surface of the semi-cured resin-impregnated plate 30, and the semi-cured resin may be melted and cured. The buffer material may have a thickness equal to or less than the combined thickness of the semi-cured resin-impregnated plate 30 and the metal plate 20. The buffer material is preferably one that does not deform when heated and pressurized in this application and does not damage the metal circuit, and more preferably a material that deforms when pressed and can reduce the pressure difference between the main surface and the protruding part. For example, a metal plate and a gasket sheet can be used.

[0046] A laminated substrate can also be manufactured by forming a wiring pattern on the conductive plate of the laminate manufactured as described above. In the manufacturing method of the laminated substrate, a metal circuit layer 60 is formed by processing the wiring pattern on the conductive plate 50, as shown in Figure 1(c) and Figure 2(c). A laminated substrate 102 is obtained by forming the metal circuit layer 60.

[0047] The metal circuit layer 60 has one or more conductive portions provided on the resin-filled plate 40. At least one of the conductive portions is a first conductive portion 52 having, in a top view, a substrate portion 52a present on the resin-filled plate 40 and a protruding portion 52b that extends outside the main surface of the resin-filled plate 40. The conductive portion may also include a second conductive portion 62 that is received so as to be contained within the main surface of the resin-filled plate 40.

[0048] As shown in Figure 3, the side surface of the first conductive portion 52 in the laminated substrate 102 is formed by the above-described processing and has an inclined surface that is inclined with respect to a direction perpendicular to the direction in which the main surface of the resin-filled plate 40 extends. The inclination angle θ of the side surface of the first conductive portion 52 may be, for example, 85° or less, 84° or less, 83° or less, 82° or less, or 81° or less with respect to the direction in which the main surface of the resin-filled plate 40 extends. The inclination angle θ of the side surface of the first conductive portion 52 may be, for example, 35° or more, 37° or more, 40° or more, 42° or more, or 45° or more with respect to the direction in which the main surface of the resin-filled plate 40 extends. By having the lower limit of the inclination angle θ within the above range, the area of ​​the main surface of the first conductive portion 52 on the side opposite to the resin-filled plate 40 can be made larger, and additional processing on the main surface can be easily carried out. The inclination angle θ of the side surface of the first conductive portion 52 may be adjusted within the range described above, and may be, for example, 35 to 85° with respect to the direction in which the main surface of the resin-filled plate 40 extends. The inclination angle can be controlled by adjusting the means of pattern formation (processing method and processing conditions), etc.

[0049] The inclination angle θ of the side surface of the first conductive portion 52 refers to the inclination angle measured by image analysis of the end of the first conductive portion 52 that is located on the inner side of the main surface of the resin-filled plate 40, obtained by acquiring a cross-sectional image including the first conductive portion 52 as shown in Figure 3.

[0050] The means for forming the wiring pattern on the conductive plate 50 may be, for example, etching. Etching, for example, forms a resist layer having a desired pattern on the surface of the conductive plate 50. As the resist material, for example, a photosensitive resist can be used. When using a photosensitive resist, an organic layer containing the photosensitive resist material is provided on the conductive plate 50, and a resist layer having a desired pattern can be formed by exposure and development. The resist may be a negative-type resist or a positive-type resist.

[0051] After forming the resist layer, the portion of the conductive plate 50 that does not have a resist layer is removed by etching, and then the resist layer is removed to form a metal circuit layer 60 having a wiring pattern composed of conductive parts including the first conductive part 52. The shape of the wiring pattern is not particularly limited. The wiring pattern may be, for example, a fine pattern or a so-called solid pattern.

[0052] One embodiment of the laminate includes a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided on the resin-filled plate. The conductive plate, when viewed from above, has a substrate portion located on the resin-filled plate and a portion located outside the main surface of the resin-filled plate.

[0053] Laminates are useful as intermediates in the preparation of laminated substrates. Laminates are intermediates before wiring patterns are formed, and the sides of the conductive plates constituting the laminate do not have inclined surfaces formed by etching or other means. Laminated substrates can also be prepared by forming wiring patterns on the conductive plates constituting the laminate.

[0054] One embodiment of a laminated substrate comprises a metal plate, a resin-filled plate provided on the metal plate, and one or more conductive portions provided on the resin-filled plate. In the laminated substrate, at least one of the one or more conductive portions is a first conductive portion having, in a top view, a substrate portion present on the resin-filled plate and a protruding portion extending beyond the main surface of the resin-filled plate, and the side surface of the first conductive portion is inclined with respect to the lamination direction. The laminated substrate may not have a brazing layer.

[0055] The above-described laminated substrate has excellent insulating properties because it has a resin-filled plate. In conventional laminated substrates, it is necessary to provide terminals separately by soldering or other means for connection to external circuits. However, in such cases, power loss may occur at the interface between the conductive part of the laminated substrate and the attached terminal. On the other hand, the laminated substrate according to this disclosure has a conductive part that has a protrusion that extends beyond the main surface of the resin-filled plate. The aforementioned protrusion can be used itself for connection to an external circuit. This makes it possible to reduce power loss in connection with an external circuit.

[0056] Figure 4 is a schematic diagram showing an example of a laminated substrate. Figure 5 is an end view along the VV line in Figure 4. Figure 6 is a plan view of the laminated substrate shown in Figure 4. The laminated substrate 103 has a metal plate 20, a resin-filled plate 40, and a metal circuit layer 60 in this order. In the example shown in Figure 4, the metal circuit layer 60 is composed of a first conductive portion 52 having a portion that protrudes outward from the main surface of the resin-filled plate 40 when viewed from above, and a second conductive portion 62 formed to fit within the main surface of the resin-filled plate 40 when viewed from above. The first conductive portion 52 has a substrate portion 52a that is located on the resin-filled plate 40 and a protruding portion 52b that extends outside the main surface of the resin-filled plate 40 when viewed from above.

[0057] The length L1 of the protrusion 52b in the first conductive portion 52 may be adjusted according to the purpose of use of the laminated substrate. Such adjustments can be made, for example, by changing the length L0 of the overhang portion 50b of the conductive plate 50 that is outside the main surface of the resin-filled plate 40 in the laminate before forming the wiring pattern, and by changing the length L0 of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate when preparing the laminate. The lower limit of the length L1 of the protrusion 52b may be, for example, 2.0 mm or more, 3.0 mm or more, 4.0 mm or more, or 5.0 mm or more. By setting the lower limit of the length L1 within the above range, there is a circuit with sufficient distance for connection to an external circuit and it can be easily incorporated into the next process. The upper limit of the length L1 of the protrusion 52b may be, for example, 15.0 mm or less, 13.0 mm or less, 12.0 mm or less, or 10.0 mm or less. By setting the upper limit of the length L1 within the above range, it is possible to make it less likely for the protruding part to peel off, bend, etc., due to handling while connecting to an external circuit. The length L1 of the protruding part 52b may be adjusted within the above range, for example, 2.0 to 15.0 mm or 3.0 to 13.0 mm.

[0058] The length L1 of the protruding portion 52b refers to the maximum distance between the end 40E of the resin-filled plate 40 and the metal plate 20 and the end 52E of the protruding portion 52b of the first conductive portion 52, when the laminated substrate 102 having the metal plate 20, the resin-filled plate 40 and the metal circuit layer 60 is observed from the metal plate 20 side. The length L1 of the protruding portion 52b can be measured in the same way as the length L0 of the portion 50b of the conductive plate 50 that is located outside the main surface of the semi-cured resin-impregnated plate 30, as described in the manufacturing method of the laminate according to this disclosure. If there are multiple first conductive portions, the length of the protruding portion 52b is measured for each first conductive portion 52, and the arithmetic mean is taken as the length L1 of the protruding portion 52b in the laminated substrate being measured.

[0059] The upper limit of the thickness T of the first conductive part 52 may be, for example, 1.5 mm or less, 1.0 mm or less, 0.8 mm or less, or 0.6 mm or less. By keeping the upper limit of the thickness T of the first conductive part 52 within the above range, the difference in thermal expansion with the resin-filled plate 40 is suppressed, and a more reliable laminated substrate can be manufactured. The lower limit of the thickness T of the first conductive part 52 may be, for example, 0.1 mm or more, 0.3 mm or more, or 0.4 mm or more. By keeping the lower limit of the thickness T of the first conductive part 52 within the above range, heat can be dissipated more efficiently to the lower surface even when heat is generated on the upper surface of the first conductive part 52. The thickness T of the first conductive part 52 may be adjusted within the above range, for example, 0.1 to 1.5 mm.

[0060] The thickness of the first conductive portion 52 is measured along a direction perpendicular to the main surface. If the thickness is not constant, any 10 locations are selected to measure the thickness, and the average value of these measurements must be within the range described above.

[0061] The upper limit of the ratio (value expressed as L1 / T) of the length L1 of the protrusion 52b to the thickness T of the first conductive part 52 may be, for example, 50.0 or less, less than 50.0, 45.0 or less, 40.0 or less, 35.0 or less, or 30.0 or less. By having the upper limit of the ratio within the above range, the strength of the protrusion 52b is increased, and deformation during handling can be prevented. The lower limit of the ratio may be, for example, 5.0 or more, 7.5 or more, 10.0 or more, or 12.5 or more. By having the lower limit of the ratio within the above range, the formation of the protrusion 52b becomes easier, and the desired structure can be manufactured more easily. The ratio may be adjusted within the above range, for example, 5.0 to 50.0.

[0062] In the laminated substrate 103 described above, the amount of warpage of the first conductive portion 52 in the lamination direction is kept small. The upper limit of the amount of warpage, which is the amount of deflection of the protruding portion 52b in the direction from the first conductive portion 52 toward the metal plate 20, may be, for example, less than 0.50 mm, less than 0.40 mm, less than 0.30 mm, 0.25 mm or less, 0.20 mm or less, 0.18 mm or less, or 0.16 mm or less. By keeping the upper limit of the amount of warpage within the above range, delamination in each layer of the laminated substrate can be further suppressed, and reliability can be further improved. The lower limit of the amount of warpage of the first conductive portion 52 in the lamination direction is not particularly limited, but may be, for example, 0.05 mm or more, 0.08 mm or more, or 0.10 mm or more. The amount of warpage of the first conductive portion 52 with respect to the lamination direction may be adjusted within the above range, for example, 0.05 mm or more and less than 0.50 mm, 0.05 mm or more and less than 0.30 mm, or 0.05 to 0.25 mm.

[0063] The amount of warpage, which is the deflection of the protruding portion 52b of the first conductive portion 52 in the direction from the first conductive portion 52 toward the metal plate 20, refers to the value measured by the following method. Specifically, first, the sample is set on the stage of a one-shot 3D shape measuring machine, the position of the main surface (reference position) of the first conductive portion 52 is measured, and the position of the main surface of the protruding portion 52b is measured for the same first conductive portion 52 from which the reference position was determined. Then, the difference between the two positions is calculated and taken as the amount of deflection F in the direction from the first conductive portion 52 toward the metal plate 20. The position of the main surface of the protruding portion 52b is the end of the protruding portion 52b (the point where the distance from the end of the resin-filled plate 40 is maximum). The measurement of the amount of deflection may be based on either of the two main surfaces of the first conductive portion 52. Figure 7 is a schematic diagram relating to the measurement of the amount of warpage, which is the deflection. Figure 7 shows an example where the main surface of the first conductive part 52 opposite to the resin-filled plate 40 side is used as the reference position. As a one-shot 3D shape measuring machine, for example, the "VR-3000" (product name) manufactured by Keyence Corporation can be used.

[0064] When there are two or more conductive parts on the resin-filled plate, the minimum distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 can also be adjusted. The adjacent conductive part may be the first conductive part or the second conductive part 62. The minimum distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 may be, for example, 2.0 mm or less, 1.8 mm or less, 1.5 mm or less, 1.2 mm or less, or 1.0 mm or less. If the above minimum value is within the above range, it is possible to create circuits with more complex patterns and to manufacture more advanced laminated substrates. The minimum distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 may be, for example, 0.3 mm or more, 0.5 mm or more, 0.7 mm or more, or 0.8 mm or more. If the above minimum value is within the above range, discharge between circuits can be prevented during insulation measurement. The distance between the first conductive part 52 and the conductive part adjacent to the first conductive part 52 may be adjusted so that the minimum value is within the range described above, and the minimum value may be, for example, 0.3 to 2.0 mm.

[0065] Although several embodiments have been described above, this disclosure is not limited in any way to the embodiments described above. Furthermore, the descriptions of the embodiments described above are applicable to each other. [Examples]

[0066] The present disclosure will be described in more detail below with reference to examples and comparative examples. However, the present disclosure is not limited to the following examples.

[0067] (Example 1) [Fabrication of nitride sintered plates] 100 parts by mass of orthoboric acid manufactured by Shin Nippon Denko Co., Ltd. and 35 parts by mass of acetylene black (product name: HS100) manufactured by Denka Co., Ltd. were mixed using a Henschel mixer. The resulting mixture was packed into a graphite crucible and heated in an arc furnace under an argon atmosphere at 2200°C for 5 hours to obtain a lump of boron carbide (B4C). The obtained lump was coarsely ground in a jaw crusher to obtain a coarse powder. This coarse powder was further ground in a ball mill with silicon carbide balls (φ10 mm) to obtain a fine powder.

[0068] The prepared pulverized powder was packed into a boron nitride crucible. Then, using a resistance heating furnace, it was heated under nitrogen gas conditions at 2000°C and 0.85 MPa for 10 hours. In this way, a calcined product containing boron carbonitride (B4CN4) was obtained.

[0069] A sintering aid was prepared by combining powdered boric acid and calcium carbonate. For this preparation, 50.0 parts by mass of calcium carbonate was added to 100 parts by mass of boric acid. 20 parts by mass of the sintering aid was added to 100 parts by mass of the calcined material, and the mixture was prepared as a powder by mixing using a Henschel mixer.

[0070] The mixture was pressed using a powder press at 150 MPa for 30 seconds to obtain a sheet-like molded body (length × width × thickness = 50 mm × 50 mm × 0.35 mm). Three molded plates were prepared using the same procedure.

[0071] Next, 30 parts by mass of amorphous boron nitride (manufactured by Denka Co., Ltd., trade name: GP) was dispersed in a release agent slurry consisting of a mixture of 60 parts by weight of terpineol, 30 parts by weight of toluene, and 10 parts by weight of polyisobutyl methacrylate to prepare a slurry. The obtained slurry was used to create a coating film (boron nitride-containing layer) with a thickness of 0.03 mm on one main surface of the molded plate using the doctor blade method. The molded plates with the coating films were then stacked so that the coating films separated them from each other.

[0072] Three molded plates, stacked on top of each other, were placed in a boron nitride container and introduced into a batch-type high-frequency furnace. In the batch-type high-frequency furnace, the plates were heated for 5 hours under atmospheric pressure, a nitrogen flow rate of 5 L / min, and 2000°C (firing process). After that, the laminate, in which boron nitride sintered plates (sintered body) and release layers were alternately stacked, was removed from the boron nitride container. The boron nitride sintered plates constituting the laminate were peeled off using a thickness gauge leaf, and three fired plates with the release layer remaining on the surface were obtained. The thickness of the fired plates was 0.40 mm.

[0073] <Measurement of median pore size> The pore volume distribution of the obtained boron nitride sintered plate was measured using a mercury porosimeter (device name: Autopore IV9500) manufactured by Shimadzu Corporation, while increasing the pressure from 0.0042 MPa to 206.8 MPa, and the median pore diameter was determined. The median pore diameter of the boron nitride sintered plate was 2.6 μm.

[0074] <Measurement of porosity> The porosity of the obtained boron nitride sintered plate was determined. First, the bulk density [Y(kg / m³)] was calculated from the volume and mass of the boron nitride sintered plate. 3 )] is calculated, and this bulk density and the theoretical density of nitride [X (kg / m³) are used. 3 The porosity of the boron nitride sintered body was calculated using the following formula (1). The porosity of the boron nitride sintered body was 52 volume%. The theoretical density X of the nitrate boron nitride sintered plate is 2280 kg / m³. 3 I used it. Porosity (volume %) = [1 - (Y / X)] × 100 (2)

[0075] [Preparation of semi-cured resin-impregnated boards] 80 parts by mass of a compound having a cyanate group, 20 parts by mass of a compound having a bismaleimide group, and 50 parts by mass of a compound having an epoxy group were measured out into a container. To a total of 100 parts by mass of the three compounds, 1 part by mass of a phosphine-based curing agent and 0.01 parts by mass of an imidazole-based curing agent were added and mixed. Since the epoxy resin was solid at room temperature, it was heated to approximately 80°C before mixing. The viscosity of the obtained thermosetting resin composition at 100°C was 10 mPa·seconds. After heating the prepared thermosetting resin composition to 100°C, the temperature was maintained and the composition was dropped onto the upper main surface of the boron nitride sintered plate using a dispenser to impregnate it. The amount of thermosetting resin composition dropped was 1.5 times the total volume of pores in the boron nitride sintered plate. A portion of the thermosetting resin composition did not impregnate the boron nitride sintered plate and remained on the main surface.

[0076] The following compounds were used to prepare the thermosetting resin composition.

[0077] Compounds containing a cyanate group: Dimethylmethylenebis(1,4-phenylene)biscyanate (manufactured by Mitsubishi Gas Chemical Company, Inc., trade name: TA-CN) Compounds containing a bismaleimide group: N,N'-[(1-methylethylidene)bis[(p-phenylene)oxy(p-phenylene)]]bismaleimide (manufactured by K.I. Chemicals Co., Ltd., product name: BMI-80) Compound containing an epoxy group: 1,6-bis(2,3-epoxypropane-1-yloxy)naphthalene (manufactured by DIC Corporation, product name: HP-4032D)

[0078] Phosphine-based curing agent: Tetraphenylphosphonium tetra-p-tolylborate (manufactured by Chemical Co., Ltd., product name: TPP-MK) Imidazole-based curing agent: 1-(1-cyanomethyl)-2-ethyl-4-methyl-1H-imidazole (manufactured by Shikoku Chemicals Co., Ltd., product name: 2E4MZ-CN)

[0079] Under atmospheric pressure, the resin composition remaining on the upper main surface of the boron nitride sintered plate was smoothed using a stainless steel scraper (manufactured by Narubi Co., Ltd.). The excess resin composition was removed to obtain a semi-cured resin-impregnated plate with a smooth main surface.

[0080] <Measurement of the curing rate of semi-cured resin> The curing rate of the above-mentioned semi-cured resin was determined by measurement using a differential scanning calorimeter. First, the amount of heat generated per unit mass Q when 2 mg of the uncured resin composition was completely cured was measured. Then, the amount of heat generated per unit mass R when 10 mg of a semi-cured resin sample taken from a semi-cured resin-impregnated plate was similarly heated and completely cured was determined. Assuming that the semi-cured material contains c (mass%) of thermosetting components, the curing rate of the semi-cured resin impregnated in the semi-cured resin-impregnated plate was determined by the following formula (1). The curing rate of the semi-cured resin was 32%. The curing rate (%) of a semi-cured resin = {1 - [(R / c) × 100] / Q} × 100 ... Equation (1)

[0081] [Manufacturing of laminates] On one main surface of the above-mentioned semi-cured resin-impregnated board (length × width × thickness = 50 mm × 50 mm × 0.40 mm), copper foil (length × width × thickness = 50 mm × 50 mm × 0.5 mm) was laminated as a metal plate so that the four corners coincided, and on the other main surface, copper foil (length × width × thickness = 50 mm × 54 mm × 0.5 mm) was laminated as a conductive plate, offset so that the length L0 of the portion that extends outside the main surface of the semi-cured resin-impregnated board was 4.0 mm. The laminate was heated and pressurized for 5 minutes under conditions of 150°C and 5 MPa, and then heated for 2 hours under conditions of 200°C and atmospheric pressure to obtain a laminate. During the above heating and pressurizing, a gasket sheet (manufactured by Kitaco Co., Ltd., thickness: 0.8 mm) was placed as a cushioning material under the portion that extends outside the main surface of the semi-cured resin-impregnated board before pressing. The gasket sheet mentioned above was protected by applying polyimide tape (manufactured by 3M, thickness: 0.05 mm) to both main surfaces.

[0082] [Manufacturing of multilayer substrates] An organic layer containing a photosensitive resist material was provided on the main surface of the conductive plate side of the obtained laminate, and a resist layer was formed by exposure and development. After forming the resist layer, the portion of the conductive plate without the resist layer was removed by etching, and then the resist layer was removed to form a metal circuit layer having a wiring pattern composed of conductive parts including a first conductive part. The wiring pattern had the shape shown in Figure 7.

[0083] [Shape evaluation of laminated substrates] For the obtained laminated substrate, the inclination angle of the side surface of the first conductive portion, the amount of warping of the first conductive portion, the thickness of the first conductive portion, the distance between the edge of the first conductive portion and the edge of the resin-filled plate, the ratio of the thickness of the first conductive portion to the distance between the edge of the first conductive portion and the resin-filled plate, and the distance between the first conductive portion and adjacent conductive portions were measured. The results are shown in Table 1.

[0084] [Evaluation of the insulating properties of multilayer substrates] The dielectric breakdown voltage at the first conductive part 52 of the obtained laminated substrate was evaluated using an ultra-high voltage withstand voltage tester (manufactured by Keisoku Giken Kenkyujo Co., Ltd.) and a measurement jig (manufactured by Onishi Electronics Co., Ltd.). The adhesion was evaluated from the measurement results according to the following criteria. The results are shown in Table 1. A: The dielectric breakdown voltage is 10kV or higher. B: The dielectric breakdown voltage is between 7kV and 10kV. C: The dielectric breakdown voltage is less than 7kV, or conduction has occurred due to creepage discharge between circuit layers.

[0085] [Evaluation of power loss in multilayer substrates] The power loss between conductive parts of the obtained laminated substrate was measured. Referring to Figure 8, the magnitude of the power loss was determined by measuring the power in the section from 1 mm from the end of the protrusion of one of the two provided first conductive parts 52 to 1 mm from the end of the protrusion of the other first conductive part 52 when transmitting power between them. The first conductive parts 52 were wire-bonded with copper wire. The evaluation was a relative evaluation with the power loss in Example 1 set to 1. The power loss was evaluated from the measurement results according to the following criteria. The results are shown in Table 1. A: The relative value of power loss is less than 1.0. B: The relative value of power loss is 1.0 or greater and less than 1.5. C: The relative value of power loss is 1.5 or higher.

[0086] [Evaluation of Adhesion of Multilayer Substrates] The resulting laminated substrates were evaluated using an ultrasonic flaw detection device (manufactured by Hitachi Power Solutions, Ltd., product name: Fine SAT V) to assess the degree of adhesion between the resin-filled insulating plate and the metal circuit layer provided on the main surface of the resin-filled plate. The evaluation was based on the area ratio of the adhesive portion to the area of ​​the main surface of the resin-filled plate. The adhesion was evaluated from the measurement results according to the following criteria. The results are shown in Table 1. The adhesive portion refers to the region of reflected ultrasonic waves with an intensity of 20% to 50% of the intensity of the reflected ultrasonic waves when there is an air layer at the interface during ultrasonic flaw detection measurement. A: The area ratio of the bonded portion is 90% or more. B: The area ratio of the bonded portion is less than 90%.

[0087] (Example 2) Laminates and laminated substrates were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate located outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminated substrate was measured in the same manner as in Example 1. Furthermore, the performance evaluation of the obtained laminated substrate was performed in the same manner as in Example 1. The results are shown in Table 1.

[0088] (Example 3) A laminate and a laminated substrate were prepared in the same manner as in Example 1, except that the heating temperature during laminate fabrication, the length L0 of the portion of the conductive plate located outside the main surface of the semi-cured resin-impregnated plate, and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminated substrate was measured in the same manner as in Example 1. Furthermore, the performance evaluation of the obtained laminated substrate was performed in the same manner as in Example 1. The results are shown in Table 1.

[0089] (Example 4) Laminates and laminated substrates were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate located outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed as shown in Table 1. The inclination angle of the side surface of the first conductive portion in the obtained laminated substrate was measured in the same manner as in Example 1. Furthermore, the performance evaluation of the obtained laminated substrate was performed in the same manner as in Example 1. The results are shown in Table 1.

[0090] (Example 5) The laminate and laminated substrate were prepared in the same manner as in Example 1, except that no cushioning material was used in the manufacturing of the laminate. The inclination angle of the side surface of the first conductive part of the obtained laminated substrate was measured in the same manner as in Example 1. The performance evaluation of the obtained laminated substrate was also performed in the same manner as in Example 1. The results are shown in Table 1.

[0091] (Comparative Example 1) Laminates and laminated substrates were prepared in the same manner as in Example 1, except that a silicon nitride sintered plate was used instead of a semi-cured resin-impregnated plate, the length L0 of the portion of the conductive plate that is outside the main surface of the semi-cured resin-impregnated plate was changed as shown in Table 1, the laminates were fixed from above and below with jigs during joining, brazing material was applied between the conductive plate and the silicon nitride sintered plate, and the joining was performed by heating to 790°C. The inclination angle of the side surface of the first conductive portion of the obtained laminated substrate was measured in the same manner as in Example 1. Furthermore, the performance evaluation of the obtained laminated substrate was performed in the same manner as in Example 1. The results are shown in Table 1.

[0092] (Comparative Example 2) Laminates and laminated substrates were prepared in the same manner as in Example 1, except that the length L0 of the portion of the conductive plate located outside the main surface of the semi-cured resin-impregnated plate and the thickness T of the first conductive portion were changed. The inclination angle of the side surface of the first conductive portion in the obtained laminated substrate was measured in the same manner as in Example 1. Furthermore, the performance evaluation of the obtained laminated substrate was performed in the same manner as in Example 1. In addition, for power loss measurement, the evaluation was performed after joining the Cu plate using solder so that there was a distance of 4.0 mm outside the main surface of the resin-filled plate. The results are shown in Table 1.

[0093] [Table 1]

[0094] As shown in Table 1, it was confirmed that by satisfying the configuration described in the claims, as in Examples 1 to 4, the resulting laminate can achieve both excellent insulation and suppression of power loss in the circuit. As shown in Example 4, it was confirmed that even when the protrusions are long and the circuit path is long, power loss is suppressed to a level that is practically sufficient. [Industrial applicability]

[0095] This disclosure provides a method for manufacturing a laminated substrate having excellent adhesion between an insulating plate and a metal circuit, wherein a metal circuit provided on an insulating plate and a protruding portion that protrudes outward from the main surface of the insulating plate are integrally formed. This disclosure also provides a laminated substrate with low insulation and suppressed power loss in the circuit. This disclosure also provides a laminate suitable for manufacturing the above-described laminated substrate and a method for manufacturing the same. [Explanation of Symbols]

[0096] 20...metal plate, 30...semi-cured resin impregnated plate, 40...resin filled plate, 50...conductive plate, 52...first conductive part, 60...metal circuit layer, 62...second conductive part, 100...intermediate body, 101...laminated body, 102,103...laminated substrate.

Claims

1. The process involves laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, The method involves heating the semi-cured resin-impregnated plate at a temperature of 200°C or lower to cure the semi-cured resin, thereby bonding the cured semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate. A method for manufacturing a laminate, wherein the conductive plate, when viewed from above, has a portion located on the semi-cured resin-impregnated plate and a portion located outside the main surface of the semi-cured resin-impregnated plate.

2. The manufacturing method according to claim 1, wherein the length of the portion of the conductive plate that is located outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.

3. The process involves laminating a metal plate, a semi-cured resin-impregnated plate, and a conductive plate in this order, The semi-cured resin-impregnated plate is heat-treated at a temperature of 200°C or lower to cure the semi-cured resin, thereby bonding the cured material of the semi-cured resin-impregnated plate with the metal plate and the conductive plate to obtain a laminate. The process involves forming a wiring pattern on the conductive plate of the laminate, A method for manufacturing a laminated substrate, wherein the conductive plate, when viewed from above, has a substrate portion located on the semi-cured resin-impregnated plate and a portion located outside the main surface of the semi-cured resin-impregnated plate.

4. The manufacturing method according to claim 3, wherein the length of the portion of the conductive plate that is located outside the main surface of the semi-cured resin-impregnated plate is 2.0 mm or more.

5. It comprises a metal plate, a resin-filled plate provided on the metal plate, and one or more conductive parts provided so as to be in contact with the resin-filled plate, One or more of the conductive portions is a first conductive portion having, in a top view, a substrate portion located on the resin-filled plate and a protruding portion extending beyond the main surface of the resin-filled plate. A laminated substrate in which the side surface of the first conductive portion is inclined with respect to the stacking direction.

6. The laminated substrate according to claim 5, wherein the amount of curvature of the protruding portion in the direction from the first conductive portion toward the metal plate is less than 0.50 mm.

7. The laminated substrate according to claim 5 or 6, wherein the thickness of the first conductive portion is 1.5 mm or less.

8. The laminated substrate according to claim 5 or 6, wherein the length of the protruding portion is 2.0 mm or more.

9. The laminated substrate according to claim 5 or 6, wherein the inclination angle of the side surface of the first conductive portion is 35 to 85° with respect to the direction in which the main surface of the resin-filled plate extends.

10. The laminated substrate according to claim 5 or 6, wherein the ratio of the length of the protrusion to the thickness of the first conductive portion is less than 50.

0.

11. The laminated substrate according to claim 5 or 6, wherein the minimum distance between the first conductive portion and a conductive portion adjacent to the first conductive portion is 2.0 mm or less.

12. It comprises a metal plate, a resin-filled plate provided on the metal plate, and a conductive plate provided so as to be in contact with the resin-filled plate, The conductive plate is a laminate having, in a top view, a substrate portion located on the resin-filled plate and an overhanging portion located outside the main surface of the resin-filled plate.

13. The laminate according to claim 12, wherein the amount of curvature of the protruding portion in the direction from the conductive plate to the metal plate is less than 0.30 mm.

14. The laminate according to claim 12 or 13, wherein the length of the protruding portion is 2.0 mm or more.

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