Image processing system

Abstract

Provided is a display device or an electronic apparatus with low power consumption. Provided is an image processing system that can reduce the quantity of communication data. This image processing system has a display unit, an input unit, a calculation unit, and an image processing unit. The input unit has a function of acquiring location information regarding an instructing operation that is performed by a user. The calculation unit has a function of determining a first region and a second region on the basis of the location information. The image processing unit has a function of performing image processing of a section of a first image and thereby generating a second image, said section corresponding to the first region. The display unit has a function of displaying the second image.

Description

[Technical Field]

[0001] One aspect of the present invention relates to electronic equipment. One aspect of the present invention relates to a method for driving electronic equipment. One aspect of the present invention relates to a display device. One aspect of the present invention relates to a method for driving a display device. One aspect of the present invention relates to a program.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, information terminal devices such as smartphones and other mobile phones, tablet devices, and notebook PCs (personal computers) have become widespread. These terminal devices are equipped with a screen for displaying images and input means such as a touch panel, mouse, or controller.

[0004] For example, products using capacitive touch sensors in touch panels are widely available. Furthermore, Patent Document 1 discloses a touch panel configuration in which both organic EL elements and organic photodiodes are arranged in the display unit, enabling fingerprint authentication on the display unit. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2020 / 053692 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a low-power display device or electronic device. Alternatively, it aims to provide an image processing system, display device, or electronic device capable of reducing the amount of communication data. Alternatively, it aims to provide a system using electronic devices that do not require high computing performance. Alternatively, it aims to provide an image processing system, display device, or electronic device that reduces power consumption without causing discomfort to the user.

[0007] One aspect of the present invention aims to provide an image processing system having a novel configuration, a display device having a novel configuration, or an electronic device having a novel configuration. Alternatively, one aspect of the present invention aims to provide a method for driving a display device having a novel configuration, or a method for driving an electronic device having a novel configuration. Another aspect of the present invention aims to mitigate at least one of the problems of the prior art.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems can be identified from the description in the specification, drawings, claims, etc. [Means for solving the problem]

[0009] One aspect of the present invention is an image processing system having a display unit, an input unit, a calculation unit, and an image processing unit. The input unit has the function of acquiring position information of user instructions. The calculation unit has the function of determining a first region and a second region based on the position information. The image processing unit has the function of generating a second image by performing image processing on the portion of the first image corresponding to the first region. The display unit has the function of displaying the second image.

[0010] Furthermore, it is preferable that the above also includes a communication unit that has the function of communicating with a server. In this case, it is preferable that the image processing unit is provided on the server. Alternatively, it is preferable that the image processing unit and the calculation unit are provided on the server.

[0011] Furthermore, in any of the above, it is preferable that the image processing is a process that reduces the resolution of the first region compared to the second region.

[0012] Furthermore, in any of the above, it is preferable that the image processing is a process that lowers the frequency of the first region compared to the second region.

[0013] Furthermore, in any of the above, it is preferable that the image processing is a process that lowers the gradation of the first region compared to the second region.

[0014] Furthermore, in any of the above, the input section preferably has a touch sensor. In this case, the touch sensor is more preferably a capacitive sensor or an organic photodiode.

[0015] Furthermore, in any of the above, it is preferable that the first region is a region where a moving image is displayed, and the second region is a region where a moving image with slower motion than the first region, or a still image, is displayed.

[0016] Furthermore, in either of the above, it is preferable that the second region is a region containing coordinates indicated by the user, and the first region is a region surrounding the second region.

[0017] Furthermore, in any of the above, it is preferable that the display unit has a resolution of 50 ppi or more and 1500 ppi or less. [Effects of the Invention]

[0018] According to one aspect of the present invention, a display device or an electronic device with low power consumption can be provided. Alternatively, a display device or an electronic device capable of reducing the amount of communication data can be provided. Alternatively, a system using an electronic device that does not require high computing performance can be provided. Alternatively, a display device or an electronic device that reduces power consumption without giving the user a sense of discomfort can be provided.

[0019] According to one aspect of the present invention, an image processing system having a novel configuration, a display device having a novel configuration, or an electronic device having a novel configuration can be provided. Alternatively, one aspect of the present invention can provide a driving method for a display device having a novel configuration or a driving method for an electronic device having a novel configuration. According to one aspect of the present invention, at least one of the problems of the prior art can be at least alleviated.

[0020] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects can be extracted from the descriptions in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0021] FIGS. 1A and 1B are diagrams showing a configuration example of an electronic device, and FIG. 1C is a diagram showing a configuration example of a system. FIG. 2 is a diagram showing a configuration example of a system. FIG. 3 is a flowchart related to the operation of the system. FIGS. 4A and 4B are diagrams showing operation examples. FIGS. 5A and 5B are diagrams showing operation examples. FIGS. 6A to 6D are diagrams showing operation examples. FIGS. 7A to 7D are diagrams showing operation examples. FIGS. 8A and 8B are diagrams showing operation examples. FIGS. 9A to 9C are diagrams showing operation examples. FIGS. 10A and 10B are diagrams showing a configuration example of a display device. FIG. 11 is a diagram showing a configuration example of a display device. Figure 12 shows an example of a display device configuration. Figures 13A to 13C show examples of display device configurations. Figures 14A to 14F show examples of pixel configurations. Figure 15 shows an example of a display device configuration. Figures 16A and 16B show examples of the configuration of a display device. Figure 17 shows an example of a display device configuration. Figures 18A to 18F show examples of the configuration of a light-emitting device. Figures 19A to 19C show examples of the configuration of a light-emitting device. Figures 20A and 20B show examples of the configuration of a light receiving device. Figures 20C to 20E show examples of the configuration of a display device. Figure 21A is a block diagram showing an example of a display panel. Figures 21B to 21D show examples of pixel circuits. Figures 22A to 22D show examples of transistors. Figures 23A to 23F show examples of electronic device configurations. Figures 24A to 24G show examples of the configuration of electronic equipment. [Modes for carrying out the invention]

[0022] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0023] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0024] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0025] Furthermore, ordinal numbers such as "the first," "the second," etc., used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0026] In the following, expressions indicating direction, such as "up" and "down," will generally be used in accordance with the orientation shown in the drawings. However, for the purpose of simplifying explanations, the direction referred to as "up" or "down" in the specification may not always coincide with that of the drawings. For example, when explaining the stacking order (or formation order) of a laminate, even if the side on which the laminate is provided (the surface to be formed, the support surface, the adhesive surface, the flat surface, etc.) is located above the laminate in the drawing, that direction may be described as "down," and the opposite direction as "up."

[0027] Furthermore, in this specification, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" or "insulating layer" may be interchangeable with the terms "conductive film" or "insulating film."

[0028] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0029] Furthermore, in this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, display module, or simply a display panel.

[0030] In this specification, a touch panel, which is one form of a display device, has the function of displaying images, etc., on its display surface, and the function of a touch sensor that detects when a detectable object such as a finger or stylus touches, presses, or approaches the display surface. Therefore, a touch panel is one form of an input / output device.

[0031] A touch panel can also be called, for example, a display panel (or display device) with a touch sensor, or a display panel (or display device) with touch sensor functionality. A touch panel can also have a configuration comprising a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function located inside or on its surface.

[0032] Furthermore, in this specification, a touch panel circuit board with a connector or IC mounted on it may be referred to as a touch panel module, display module, or simply a touch panel.

[0033] (Embodiment 1) This embodiment describes an image processing system according to one aspect of the present invention, as well as electronic devices, display devices, servers, etc., that can be used in the image processing system.

[0034] One embodiment of the present invention is an image processing system that reduces power consumption for image display by performing image processing in response to user input. Furthermore, by performing part of the processing on a server, it eliminates the need for the user's electronic device to perform advanced calculations, making it possible to implement the system even with inexpensive electronic devices.

[0035] One embodiment of the present invention, an image processing system, can be applied, for example, to an electronic device having a touch panel. Such an electronic device can perform screen switching, scrolling, and other operations in response to user touch operations. Furthermore, electronic devices using various input means (also called user interfaces), such as digitizers, mice, touchpads, controllers, and keyboards, can perform similar operations.

[0036] When the screen changes in response to user actions, the images displayed often contain a mixture of moving parts (called video parts) and still parts (still image parts). In the video parts, the faster the movement, the harder it is for the user to perceive the image's resolution. Therefore, lowering the resolution of the video parts does not cause any discomfort to the user. By performing image processing to lower the resolution of the video parts and displaying the still image parts at their original resolution, the overall data size of the image can be reduced. Furthermore, the power consumption required for displaying the image and the amount of computation required for image processing (rendering, etc.) can be reduced.

[0037] One embodiment of the present invention is an image processing system that, in response to user operation (instruction operation) and the displayed image, can divide the entire image into two or more regions and perform image processing on each region. Examples of image processing include reducing the resolution, reducing the frequency, and reducing the gradation (brightness).

[0038] Furthermore, the above image processing can also be performed based on the user's gaze point. For example, the image processing can be performed so that the resolution, frequency, or gradation (brightness) is highest at and near the gaze point, and the resolution decreases as the view moves away from the gaze point.

[0039] When performing image processing based on the user's point of gaze, it is preferable to estimate the point of gaze based on the user's indicated position and determine the area to be processed. For example, the area containing the indicated position can be defined as the area containing the point of gaze, and image processing can be performed in which the resolution, frequency, or gradation (brightness) decreases as the area moves away from the indicated position.

[0040] The following sections will explain more specific examples with reference to the diagrams.

[0041] [Example Configuration] Figures 1A and 1B show external views of the electronic device 10. Figure 1A shows the front side of the electronic device 10, and Figure 1B shows the back side.

[0042] The electronic device 10 is a portable information terminal that can be used as a smartphone or tablet. The electronic device 10 has a display unit 11, a calculation unit 12, an image processing unit 13, a communication unit 14, etc., which are provided in the housing 20. Figures 1A and 1B also show an illuminance sensor 31, a camera 32, a speaker 33, a microphone 34, a camera 35, etc., which the electronic device 10 has. However, the electronic device 10 is not limited to these and may have other components.

[0043] Figure 1C shows a block diagram illustrating an example of the hardware configuration of some parts of the electronic device 10. The electronic device 10 includes a display unit 11, a processing unit 12, an image processing unit 13, a communication unit 14, a sensor unit 15, an imaging unit 16, an audio control unit 17, and the like. Each component is electrically connected to the others via a bus line.

[0044] For the sake of simplicity, in the following explanation, if we do not distinguish between components other than the arithmetic unit 12 of the electronic device 10, each component may be referred to as a component or the like.

[0045] The display unit 11 includes a display device 21 and an input device 22. The display unit 11 also includes a drive unit 23 for controlling the operation of the display device 21 and a drive unit 24 for controlling the operation of the input device 22. The drive unit 24 has the function of generating and outputting position information from signals output from the input device 22. The display device 21 has the function of displaying images. The input device 22 also has the function of a touch sensor. The display unit 11 can also be called a touch panel or a display device with touch functionality.

[0046] The display device 21 has a plurality of periodically arranged pixel circuits. One or more display elements are connected to each pixel circuit. As the display elements, liquid crystal elements, organic EL elements, inorganic EL elements, LED elements, microcapsules, electrophoretic elements, electrowetting elements, electrofluidic elements, electrochromic elements, MEMS elements, and other display elements can be used. In particular, it is preferable to use organic EL elements, LED elements, or liquid crystal elements.

[0047] The higher the pixel density (also called resolution) of the display device 21, the higher the image resolution that can be displayed when the display unit 11 is the same size. The pixel density (resolution) of the display device 21 is preferably 50 ppi to 1500 ppi, preferably 80 ppi to 1200 ppi, and more preferably 100 ppi to 1000 ppi. However, the resolution of the display device 21 is not limited to this, and a display device 21 with various resolutions can be used depending on the application of the electronic device 10 and the size of the display unit 11.

[0048] The input device 22 has the function of acquiring the user's indicated position and outputting that position information to the calculation unit 12.

[0049] The input device 22 is not limited to a touch sensor, and various input means as described above can be used. If a sensor other than a touch sensor is used, the input device 22 may not be included in the display unit 11, but may be provided independently.

[0050] The arithmetic unit 12 can function, for example, as a central processing unit (CPU). The arithmetic unit 12 has the function of controlling each component.

[0051] Furthermore, the arithmetic unit 12 can perform various arithmetic operations. For example, it can perform calculations related to the division of areas into which image processing is performed and areas into which image processing is not performed, based on position information input from the input device 22.

[0052] The image processing unit 13 is controlled by the arithmetic unit 12 and has the function of performing image processing. The image processing unit 13 performs image processing on multiple regions separated by the arithmetic unit 12, for example, and generates an image for display on the display unit 11. It is preferable to use a processor such as a GPU (Graphics Processing Unit) as the image processing unit 13. Here, the image processing unit 13 is shown as a separate component from the arithmetic unit 12, but the hardware may be shared with the arithmetic unit 12.

[0053] The communication unit 14 is controlled by the arithmetic unit 12 and has the function of performing wireless or wired communication. The communication unit 14 can communicate with a server 80 located outside the electronic device 10.

[0054] Here, the various sensors of the electronic device 10 are collectively shown as the sensor unit 15. The sensor unit 15 includes, for example, an illuminance sensor 31 as shown in Figure 1A, as well as an acceleration sensor 36, etc. Various sensors can be used in the sensor unit 15 depending on the configuration of the electronic device 10 and the required functions. For example, in addition to the above, various sensors such as fingerprint sensors, temperature sensors, humidity sensors, electroencephalogram sensors, blood pressure sensors, geomagnetic sensors, and GPS can be used.

[0055] Furthermore, the multiple imaging devices of the electronic device 10 are collectively shown as the imaging unit 16. The imaging unit 16 includes, for example, the camera 32 and camera 35 shown in Figure 1A.

[0056] Furthermore, the electronic device 10 may have a function to estimate the user's gaze point using the imaging unit 16. For example, the camera 32 acquires information about the user's face and information about the distance between the electronic device 10 and the user. The calculation unit 12 can estimate the user's gaze point on the screen of the display unit 11 from the positions of the two eyeballs obtained from the user's face information, and the distance between the electronic device 10 and the user.

[0057] Furthermore, the calculation unit 12 may have a function to perform facial recognition. For example, the camera 32 can capture an image of the user's face, and the calculation unit 12 can perform facial recognition using feature points obtained from that image. In particular, when the camera 32 is used for facial recognition, it is preferable to use a camera that is sensitive not only to visible light but also to infrared light, or to have a configuration that includes both a camera that is sensitive to visible light and a camera that is sensitive to infrared light.

[0058] Figure 1B shows an example where the electronic device 10 has two cameras 35 on its back. However, by arranging multiple cameras with different field-of-view angles, it is possible to accommodate various focal lengths from wide-angle to telephoto. Furthermore, by using images captured simultaneously by multiple cameras, it is possible to change the focus and depth of field using the captured images. In addition, a camera sensitive to infrared or ultraviolet light may be provided.

[0059] The audio control unit 17 has the function of controlling audio output and audio input. The audio control unit 17 includes, for example, the speaker 33 and microphone 34 shown in Figure 1A. In addition to the speaker, the audio output device included in the audio control unit 17 may also be a built-in speaker such as a bone conduction speaker. Furthermore, the system may be configured to output audio data to earphones, headphones, or external speakers wirelessly or via a wired connection.

[0060] Signals are transmitted between the arithmetic unit 12 and each component via a bus line. The arithmetic unit 12 has functions to process signals input from each component connected via the bus line, and functions to generate signals to output to each component, and can comprehensively control each component connected to the bus line.

[0061] Furthermore, the arithmetic unit 12 or other components may utilize an IC or other transistor that uses an oxide semiconductor in its channel formation region to achieve extremely low off-current. Because this transistor has an extremely low off-current, it can be used as a switch to hold the charge (data) that has flowed into a capacitive element that functions as a memory element, thereby ensuring a long data retention period. By using this characteristic in the registers or cache memory of the arithmetic unit 12 or image processing unit 13, the arithmetic unit 12, etc., can be operated only when necessary, and the information of the previous processing can be saved to the memory element in other cases, thereby enabling normally-off computing, which cuts off the power supply to the arithmetic unit 12, etc., and reduces the power consumption of the electronic device 10.

[0062] The arithmetic unit 12 interprets and executes instructions from various programs by the processor, thereby performing various data processing and program control. The programs that the processor can execute may be stored in the processor's memory area or in a separate storage unit.

[0063] The arithmetic unit 12 and the image processing unit 13 can use a CPU, as well as other microprocessors such as a DSP (Digital Signal Processor) or GPU (Graphics Processing Unit), either individually or in combination. Furthermore, these microprocessors may be implemented using PLDs (Programmable Logic Devices) such as FPGAs (Field Programmable Gate Arrays) or FPAAs (Field Programmable Analog Arrays).

[0064] The arithmetic unit 12 and the image processing unit 13 may have main memory. The main memory may include volatile memory such as RAM (Random Access Memory) or non-volatile memory such as ROM (Read Only Memory).

[0065] For example, DRAM (Dynamic Random Access Memory) is used as RAM in the main memory, and a virtual memory space is allocated and used as a workspace for the arithmetic unit 12 or the image processing unit 13. The operating system, application programs, program modules, program data, etc., stored in the memory unit are loaded into RAM for execution. These data, programs, and program modules loaded into RAM are directly accessed and manipulated by the arithmetic unit 12 or the image processing unit 13.

[0066] On the other hand, ROM can store BIOS (Basic Input / Output System) and firmware, which do not require rewriting. ROMs such as mask ROM, OTPROM (One Time Programmable Read Only Memory), or EPROM (Erasable Programmable Read Only Memory) can be used. Examples of EPROMs include UV-EPROM (Ultra-Violet Erasable Programmable Read Only Memory), EEPROM (Electrically Erasable Programmable Read Only Memory), and flash memory, which allow data erasure by ultraviolet irradiation.

[0067] Furthermore, it is preferable that the image processing unit 13 has a processor that is more specialized for parallel processing than the CPU. For example, it is preferable to have a processor that has a large number (tens to hundreds) of parallel processing processor cores, such as a GPU, TPU (Tensor Processing Unit), or NPU (Neural Processing Unit). This allows the image processing unit 13 to perform calculations related to neural networks at high speed.

[0068] The communication unit 14 can exchange data with external communication devices wirelessly. For example, the communication unit 14 can communicate via an antenna. As a means of communication (communication method) of the communication unit 14, computer networks such as the Internet (which forms the basis of the World Wide Web), intranets, extranets, PANs (Personal Area Networks), LANs (Local Area Networks), CANs (Campus Area Networks), MANs (Metropolitan Area Networks), WANs (Wide Area Networks), and GANs (Global Area Networks) can be used. When performing wireless communication, communication standards such as 3G, 4G, and 5G mobile communication systems, or specifications standardized by IEEE such as Wi-Fi® and Bluetooth® can be used as communication protocols or communication technologies.

[0069] Figure 2 shows an example with a configuration that differs in some respects from the one described above. Figure 2 also includes a block diagram of server 80.

[0070] The server 80 includes a calculation unit 81, an image processing unit 82, and a communication unit 83.

[0071] The arithmetic unit 81 can be described by referring to the description of the arithmetic unit 12. Here, an example is shown in which the image processing unit 82 is included in the arithmetic unit 81. That is, the arithmetic unit 81 can perform image processing.

[0072] On the other hand, the electronic device 10 shown in Figure 2 does not have an image processing unit 13. The calculations for image processing that were previously handled by the image processing unit 13 can be performed by the image processing unit 82 of the server 80 via the communication unit 14 and the communication unit 83.

[0073] In this way, by connecting the electronic device 10 and the server 80 via a communication unit and performing some of the calculation processing on the server 80 side, high computing power is not required on the electronic device 10 side, thus simplifying the components. This not only reduces the cost of the electronic device 10, but also makes it easier to make the electronic device 10 lighter, smaller, and thinner. A system in which much of the processing is performed on the server and the configuration of the terminal is simplified can be called a thin client system.

[0074] Furthermore, some of the processing performed by the arithmetic unit 12 can be performed by the arithmetic unit 81 of the server 80. For example, the processing related to the classification described above can be performed on the server 80 side.

[0075] In recent years, thin clients, which perform major computational processing on the server side and only limited processing on the client side, have been attracting attention. Several implementation methods for thin clients have been proposed, including network booting, server-based systems, blade PC systems, and desktop virtualization (VDI) systems.

[0076] [Method for driving image processing systems] Next, an example of a method for driving an image processing system that can be realized by the electronic device 10, or by the electronic device 10 and the server 80, will be described. Figure 3 is a flowchart of an example of a method for driving an image processing system. The flowchart shown in Figure 3 has steps S0 to S6.

[0077] In step S0, processing begins. In step S0, the electronic device 10 is in a usable state.

[0078] In step S1, the input device 22 detects user instructions. For example, if the electronic device 10 has a touch panel, user touch operations (tap, swipe, etc.) correspond to instructions. If a mouse is used as the input means, user mouse operations (move, click, double-click, etc.) correspond to instructions.

[0079] In step S2, the calculation unit 12 acquires position information from the input device 22 and the drive unit 24. In the case of a touch panel, the coordinates of the touch position correspond to the position information. In the case of using a mouse or the like, the coordinates of the cursor's indicated position correspond to the position information.

[0080] In step S3, the calculation unit 12 performs a process (also called a division process) to determine multiple areas (regions) based on the above-mentioned position information. In the division process, the entire display area is divided into multiple regions based on the position information, and the result is output as area information. In the division process, division may be performed based on both the position information and the image information. The area information output by the calculation unit 12 is used in image processing performed later by the image processing unit 13.

[0081] Here, the processing in step S3 may be performed by the arithmetic unit 81 in the server 80. In that case, a step of sending location information and image information to the server 80 is added between step S2 and step S3.

[0082] In step S4, the image processing unit 13 performs image processing according to the area of ​​the original image (first image) based on the area information generated by the above division process, and generates the image after image processing (second image). Note that some areas may remain as the original image without image processing. For example, if the image is divided into two areas, image processing may be performed on only one area, or different image processing may be performed on both areas. If the image is divided into three or more areas, different image processing may be performed on two areas, or different image processing may be performed on three areas.

[0083] Image processing techniques include reducing resolution (also known as downconversion or downscaling). For example, this can be done by setting the pixel values ​​of n × n pixels (where n is an integer greater than or equal to 2) to the same value. Pixel values ​​can be determined using methods such as the mean, median, weighted mean, or Gaussian distribution. Note that downconversion techniques are not limited to these, and various other methods can be used.

[0084] Additionally, image processing can be performed to increase the resolution (also known as upconversion or upscaling). For example, it becomes possible to display the part of the image that the user is focusing on at a higher resolution than the original image.

[0085] Furthermore, image processing techniques such as reducing the gradation (darkening the brightness) or increasing the gradation (increasing the brightness) can be used. Additionally, image processing techniques such as increasing or decreasing the drive frequency (frame frequency) may be used.

[0086] Lowering the drive frequency reduces the power consumption of the electronic device 10. On the other hand, lowering the drive frequency also reduces the display quality. In particular, the display quality deteriorates when displaying video. For example, by lowering the drive frequency in areas where user visibility is low, power consumption can be reduced while suppressing the actual deterioration of display quality. According to one aspect of the present invention, it is possible to achieve both the maintenance of display quality and the reduction of power consumption.

[0087] For example, in the region where a high drive frequency (first drive frequency) is used for display, the first drive frequency may be set to 30Hz or more and 500Hz or less, preferably 60Hz or more and 400Hz or less. On the other hand, in the region where a low drive frequency (second drive frequency) is used for display, the second drive frequency is preferably 1 / 2 or less of the first drive frequency, and more preferably 1 / 5 or less of the first drive frequency. By reducing the drive frequency and significantly reducing the number of image rewrites, power consumption can be further reduced. In addition, image data rewriting may be stopped as needed. By stopping image data rewriting, power consumption can be further reduced.

[0088] When using such a driving method, it is preferable to use transistors with extremely low off-currents for the transistors constituting the pixel circuit of the display device 21. For example, it is preferable to use transistors in which an oxide semiconductor is applied to the semiconductor where the channel is formed (OS transistors) as the transistors constituting the pixel circuit. Because OS transistors have an extremely low off-current, they can retain image data supplied to the pixel circuit for a long period of time.

[0089] Note that the processing in step S4 may be performed by the image processing unit 82 in the server 80. In this case, a step of sending the area information and the first image to the server 80 is added between step S3 and step S4.

[0090] Alternatively, both steps S3 and S4 may be executed on server 80.

[0091] In step S5, the second image is displayed on the display unit 11.

[0092] In step S6, the process is terminated.

[0093] [Image display example 1] Next, an example of an image displayed using an image processing system according to one embodiment of the present invention will be described. Here, the case of an electronic device having a touch panel will be described.

[0094] [Example 1-1] Figure 4A shows that the display unit 11 displays a background image 41 and an image 42 containing text information. Furthermore, Figure 4A shows the user 40 swiping their finger across the image 42 to scroll the text information upwards.

[0095] Figure 4B shows an example of divided areas in the image displayed in Figure 4A. Area 52 corresponds to the area where image 42 is displayed. Area 51 corresponds to the area where image 41 is displayed. Here, different hatching patterns are applied to each area to distinguish between area 51 and area 52. In area 52, a moving image is displayed where the text information moves to the top, so reducing either the resolution or the frame rate, or both, does not cause any unnatural appearance. Therefore, area 52 is an area where image processing is applied to reduce either the resolution or the frame rate, or both. On the other hand, area 51 is an area where such image processing is not applied.

[0096] Furthermore, since moving images can be displayed more smoothly with higher frame rates, image processing to increase the frame rate may be used for fast-moving moving images. For example, if the image is normally displayed at 60Hz, the area where the moving image is displayed can be displayed at 90Hz or 120Hz.

[0097] In Figure 4B, an example is shown where the area is defined on a pixel-by-pixel basis so that the shape of the divided area roughly matches the shape of the displayed image. However, the division positions of the area may be predetermined. This makes the calculation process for dividing the area simpler.

[0098] Figure 5A shows an example where the display unit 11 is pre-divided into multiple areas 25. In this case, it is divided into 4 x 8 (32) areas 25. Note that although the boundaries between areas are shown with dashed lines in Figure 5A, these boundaries are not actually displayed.

[0099] Figure 5B shows an example of the divided areas. Region 52 is a 4x4 area that includes the area where image 42 is displayed. Region 51 is the remaining 16 areas.

[0100] In this example, the display unit 11 is divided into 4 x 8 sections. The larger the number of divisions, the more natural the image that can be displayed. On the other hand, the smaller the number of divisions, the less processing load can be reduced.

[0101] [Example 1-2] The following example shows how to perform image processing based on a specified position.

[0102] Figure 6A shows the user 40's finger in contact with (tapping) the display unit 11. Figure 6B shows an example of the divided areas at this time.

[0103] As shown in Figure 6B, the display unit 11 is divided into a concentric circular area 51 centered on the contact point 50 of the user's finger, an area 53 with a larger diameter than area 51, and an area 52 located outside area 53.

[0104] In most cases, when user 40 taps the display unit 11, they focus their attention on the vicinity of the contact point 50. Therefore, the region 51 including the contact point 50 is displayed at the highest resolution and frame rate, while the region 52 furthest from the contact point 50 is displayed at the lowest resolution or lowest frame rate. Furthermore, the region 53 located between region 51 and region 52 can be displayed at a resolution and frame rate lower than or equal to that of region 51 but higher than or equal to that of region 52. Although an example of dividing the display into three regions is shown here, it may be divided into four or more regions. It is preferable to determine the size of each region in advance, taking into account the characteristics of human vision. The size of each region may be changed as needed to match the distance between user 40's eyes and the display unit 11.

[0105] Generally, the human field of vision, although varying from person to person, can be broadly classified into the following five areas: The discriminative field of vision is the area where visual functions such as visual acuity and color discrimination are best, and it refers to the area including the fixation point within approximately 5° of the center of the field of vision. The effective field of vision is the area where specific information can be instantly identified by eye movements alone, and it refers to the area adjacent to the discriminative field of vision, within approximately 30° horizontally and 20° vertically of the center of the field of vision (fixation point). The stable fixation field is the area where specific information can be identified effortlessly with head movements, and it refers to the area adjacent to the effective field of vision, within approximately 90° horizontally and 70° vertically of the center of the field of vision. The guided field of vision is the area where the presence of a specific object can be perceived, but the ability to identify it is low, and it refers to the area adjacent to the stable fixation field of vision, within approximately 100° horizontally and 85° vertically of the center of the field of vision. The auxiliary visual field is an area where the ability to identify specific objects is significantly low, and where the presence of a stimulus can only be perceived. It refers to the area adjacent to the guided visual field, within approximately 100° to 200° horizontally and 85° to 130° vertically from the center of the visual field.

[0106] In this way, by making the resolution of the image displayed in areas other than the area containing the point of focus lower, the load during video signal generation (rendering) is reduced. This type of processing is also called "foveated rendering." By combining the reduction of the drive frequency in areas other than the area containing the point of focus with foveated rendering, it is possible to further reduce power consumption while suppressing a decrease in display quality.

[0107] Figures 6C and 6D show examples where the display unit 11 is pre-divided.

[0108] If the display unit 11 has a light sensor, it can acquire shape and position information of an obstacle (such as part of a hand) that exists between the screen and the user's eyes 40. The part of the display unit 11 that is hidden by the obstacle, that is, the area where the obstacle is projected onto the display unit 11, is not visible to the user and can therefore be turned off.

[0109] Figures 7A and 7B show the display unit 11 being tapped by the user 40's finger, similar to Figure 6A. As shown in Figure 7B, the area 55 hidden by the user 40's finger and part of the hand is an area that is not displayed (equivalent to being displayed in black). In this way, by driving the display to turn off areas that are not visible to the user 40, power consumption can be reduced more effectively.

[0110] Figures 7C and 7D show an example where the display unit 11 is pre-divided. In this case, a portion of the area to be turned off may be visible to the user 40. Therefore, it is preferable that the user 40 be able to freely set whether or not to use the function to turn off the area of ​​the display unit 11 that is not visible.

[0111] [Image display example 2] The following section describes an example using an input method such as a mouse, rather than a touch panel.

[0112] [Example 2-1] The electronic device 10A shown in Figure 8A has a main unit 61 and input means including a keyboard 62 and a mouse 63. Note that one or more input means are sufficient. Furthermore, if, for example, the keyboard 62 includes a touchpad, the mouse 63 is unnecessary.

[0113] The main unit 61 has a display unit 70. The display unit 70 may also function as a touch panel. Although not shown here, the main unit 61 also has at least a calculation unit 12, an image processing unit 13, and a communication unit 14 in a position overlapping with the display unit 70. It may also have a sensor unit 15, an imaging unit 16, an audio control unit 17, etc.

[0114] The electronic device 10A has a so-called multitasking function that allows multiple application programs to run simultaneously. Here, an example is shown in which a cursor 71, window 72, window 73, and background 74 are displayed on the display unit 70. Window 72 and window 73 correspond to different tasks and display different images.

[0115] Figure 8A shows the operation of a scroll bar displayed in window 72 to scroll the content displayed in window 72. In this case, the area showing window 72 is referred to as area 52, and the remaining area (the area showing window 73 and background 74) is referred to as area 51. Area 52 displays an image with a lower resolution than area 51. Area 52 may also display an image with a lower frequency or brightness than area 51.

[0116] [Example 2-2] Figure 8B shows an example where multiple areas are divided into concentric circles around the cursor 71. While the user is operating the mouse 63, the user often focuses on the cursor 71 or its vicinity. Therefore, by displaying a high resolution around the cursor 71 and its vicinity, and decreasing the resolution as the user moves away from the cursor 71, power consumption can be reduced without causing discomfort to the user.

[0117] In Figure 8B, similar to Figure 6A, the region 51 containing the cursor 71 is displayed at the highest resolution and frame rate, while the region 52 furthest from the cursor 71 is displayed at the lowest resolution or lowest frame rate. The region 53 between region 51 and region 52 is displayed at a resolution and frame rate lower than or equal to that of region 51 but higher than or equal to that of region 52.

[0118] [Example 2-3] Figures 9A to 9C show examples of dividing regions based on the position of the cursor 71 and the displayed image.

[0119] During the period when the user is operating the mouse 63, the user often positions the cursor 71 over the window they are working in, so it can be inferred that the user is focusing on the window 72 over which the cursor 71 is superimposed. Therefore, in Figure 9A, the entire window 72 over which the cursor 71 is superimposed is set as area 51, which is displayed at the highest resolution and frame rate, while the other windows 73 and background 74 are set as area 52, which is displayed at the lowest resolution or lowest frame rate. Figure 9B is an example where the window 72 over which the cursor 71 is superimposed is set as area 51.

[0120] As shown in Figure 9C, when the cursor 71 does not overlap any window but overlaps the background 74, the background 74 can be set as the area 51 that displays at the highest resolution and frame rate, and windows 72 and 73 can be set as the area 52 that displays at the lowest resolution or lowest frame rate.

[0121] In this way, by increasing the resolution of the work area (window) where the cursor is located and decreasing the resolution of other areas, power consumption can be effectively reduced.

[0122] Furthermore, image processing may be performed to reduce the resolution to a degree that the user can perceive. In other words, the area that the electronic device 10A recognizes as a work area can be displayed clearly, while other areas can be displayed blurred. This allows the user to recognize the area that the electronic device 10A recognizes as a work area, thereby improving work efficiency.

[0123] Furthermore, once a window becomes active through mouse operation or other means, it may be displayed at a high resolution and frame rate for the duration that it remains active, while other areas are displayed at a lower resolution or frame rate. This reduces power consumption without causing any discomfort to the user when switching from mouse operation to keyboard operation.

[0124] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0125] (Embodiment 2) The following describes an example of the configuration of a display device that can be used in an image processing system according to one embodiment of the present invention.

[0126] Figures 10A and 10B show perspective views of the display device 310. Figure 10B is a perspective view illustrating the configuration of each layer of the display device 310.

[0127] The display device 310 has a substrate 320 and a substrate 312. The display device 310 has a display unit 313 provided between the substrate 320 and the substrate 312. The display unit 313 has a plurality of sub-display units 319. A layer 360 is provided between the substrate 320 and the substrate 312. The substrate 312 is preferably a translucent substrate or a layer made of a translucent material.

[0128] Layer 360 is provided with a plurality of light-emitting elements 361. Layer 360 can be configured by stacking them on a substrate 320. For example, organic electroluminescent elements (also called organic EL elements) can be used as light-emitting elements 361. However, the light-emitting elements 361 are not limited to this, and inorganic EL elements made of inorganic materials may also be used. Note that "organic EL elements" and "inorganic EL elements" are sometimes collectively referred to as "EL elements". The light-emitting elements 361 may have inorganic compounds such as quantum dots. For example, quantum dots can be used as the light-emitting layer to function as a light-emitting material.

[0129] As shown in Figure 10B, the substrate 320 has a pixel circuit group 335 containing multiple pixel circuits, a drive circuit 330 (drive circuits 330a, 330b, 330c, and 330d), and a terminal section 314, all located on the same layer. By placing the pixel circuit group 335 and the drive circuit 330 on the same layer, the wiring connecting them electrically can be shortened. As a result, wiring resistance and parasitic capacitance are reduced, and power consumption is reduced.

[0130] For example, various transistors such as poly-Si transistors or OS transistors can be used as transistors in the display device 310. Furthermore, both poly-Si transistors and OS transistors can be used in the display device 310. In this case, both poly-Si transistors and OS transistors can be formed on the substrate 320.

[0131] Furthermore, the drive circuit 330 may be formed in whole or in part by either or both of a transistor in which polycrystalline silicon is applied to the semiconductor where the channel is formed (Poly-Si transistor) and an OS transistor. Alternatively, the drive circuit 330 may use an IC chip fabricated using a single-crystal silicon substrate.

[0132] Furthermore, if the size of the display device 310 is small, such as 3 inches or less diagonally, or 2 inches or less diagonally, a transistor in which single-crystal silicon is applied as the semiconductor forming the channel (c-Si transistor) can also be used as the transistor for the display device 310. By using a single-crystal silicon substrate as the substrate 320, the pixel circuit group 335, the drive circuit 330, and the terminal section 314 can be provided on the substrate 320. This makes it possible to reduce the weight of the display device 310, lower production costs, and further improve productivity.

[0133] Furthermore, the display device 310 shown in Figures 10A and 10B consists of a sub-display unit 319 in which the display unit 313 is arranged in an m x n matrix. Thus, the pixel circuit group 335 is divided into sections 339 arranged in an m x n matrix. Figure 11 shows a planar layout of the substrate 320. Figure 11 shows the section 339 when m is 4 and n is 8.

[0134] In the display device 310, the drive circuit 330 is divided into four areas: drive circuit 330a, drive circuit 330b, drive circuit 330c, and drive circuit 330d. Drive circuits 330a, 330b, 330c, and 330d are located outside the pixel circuit group 335. Specifically, drive circuit 330a is located on the first side of the four outer edges of the pixel circuit group 335, drive circuit 330c is located on the third side facing the first side via the pixel circuit group 335, drive circuit 330b is located on the second side, and drive circuit 330d is located on the fourth side facing the second side via the pixel circuit group 335.

[0135] Each of the drive circuits 330a and 330c has 16 gate driver circuits 333. Each of the drive circuits 330b and 330d has 16 source driver circuits 331. One of the gate driver circuits 333 is electrically connected to a plurality of pixel circuits contained in one of the sections 339. One of the source driver circuits 331 is electrically connected to a plurality of pixel circuits contained in one of the sections 339.

[0136] In Figure 11, the gate driver circuit 333 electrically connected to section 339[i,j] (where i is an integer between 1 and m, and j is an integer between 1 and n) is shown as gate driver circuit 333[i,j], and the source driver circuit 331 is shown as source driver circuit 331[i,j].

[0137] As shown in Figure 11, drive circuit 330a has 16 gate driver circuits 333 in 4 columns (j from 1 to 4), drive circuit 330c has 16 gate driver circuits 333 in the remaining 4 columns (j from 5 to 8). Drive circuit 330b has 16 source driver circuits 331 in 2 rows (i from 1 to 2), and drive circuit 330d has source driver circuits 331 in the remaining 2 rows (i from 3 to 4).

[0138] The arrangement of the pixel circuit group 335 and the drive circuit 330 on the substrate 320 is not limited to the configuration shown in Figure 11. For example, the configuration shown in Figure 12 is also acceptable. In Figure 12, the drive circuit 330 is divided into two regions: drive circuit 330a and drive circuit 330b. For example, drive circuit 330a is provided with 32 gate driver circuits 333 (gate driver circuits 333[1,1] to gate driver circuits 333[4,8]), and drive circuit 330b is provided with 32 source driver circuits 331 (source driver circuits 331[1,1] to source driver circuits 331[4,8]).

[0139] Such a display device 310 can be suitably used when the area is pre-divided, as illustrated in Figures 5A and 5B of Embodiment 1. Here, the example shows the display unit 313 divided into 32 sub-display units 319, but it is not limited to 32 divisions; it may also be divided into 16, 64, 128, 256, 512, or 1024 divisions. Increasing the number of divisions in the display unit 313 can further reduce the perceived decrease in display quality for the user.

[0140] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0141] (Embodiment 3) This embodiment describes an example of the configuration of a display device that can be used in an image processing system according to one aspect of the present invention. The display device described below can be applied to the display unit 11 or the display device 21 of Embodiment 1.

[0142] One aspect of the present invention is a display device having light-emitting elements (also called light-emitting devices). The display device has two or more light-emitting elements with different emission colors. Each light-emitting element has a pair of electrodes and an EL layer between them. Preferably, the light-emitting elements are organic EL elements (organic electroluminescent elements). The two or more light-emitting elements with different emission colors each have an EL layer containing a different light-emitting material. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0143] When manufacturing a display device with multiple light-emitting elements, each with a different emission color, it is necessary to form at least one island-shaped layer containing the light-emitting material (light-emitting layer). When manufacturing part or all of the EL layer separately, a method of forming island-shaped organic films using a vapor deposition method with a shadow mask such as a metal mask is known. However, with this method, deviations from the design occur in the shape and position of the island-shaped organic films due to various influences such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the deposited film due to vapor scattering, making it difficult to achieve high resolution and high aperture ratio in the display device. In addition, during vapor deposition, the contour of the layer may become blurred, and the thickness at the edges may become thinner. In other words, the thickness of the island-shaped light-emitting layer may vary depending on the location. Furthermore, when manufacturing large, high-resolution, or high-definition display devices, there is a concern that the manufacturing yield will be low due to the low dimensional accuracy of the metal mask and deformation due to heat, etc. For this reason, measures have been taken to artificially increase the resolution (also called pixel density) by adopting special pixel arrangement methods such as PenTile arrangement.

[0144] In this specification, "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer and an adjacent light-emitting layer are physically separated.

[0145] One aspect of the present invention involves processing the EL layer into a fine pattern by photolithography without using a shadow mask such as a fine metal mask (FMM). This makes it possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be differentiated, it is possible to realize a display device with extremely vivid colors, high contrast, and high display quality. For example, the EL layer may be processed into a fine pattern using both a metal mask and photolithography.

[0146] Furthermore, part or all of the EL layer can be physically separated. This suppresses leakage current between light-emitting elements via a common layer (also called a common layer) used between adjacent light-emitting elements. This prevents crosstalk caused by unintended light emission, enabling the realization of a display device with extremely high contrast. In particular, it enables the realization of a display device with high current efficiency at low brightness levels.

[0147] One aspect of the present invention is a display device that combines a white-emitting light-emitting element with a color filter. In this case, the same configuration of light-emitting elements can be applied to the light-emitting elements provided in pixels (sub-pixels) that emit light of different colors, and all layers can be made into a common layer. Furthermore, part or all of each EL layer is separated by photolithography. This suppresses leakage current through the common layer, enabling the realization of a display device with high contrast. In particular, in an element having a tandem structure in which multiple light-emitting layers are stacked with a highly conductive intermediate layer in between, leakage current through the intermediate layer can be effectively prevented, thus enabling the realization of a display device that combines high brightness, high resolution, and high contrast.

[0148] Furthermore, it is preferable to provide an insulating layer that covers at least the sides of the island-shaped light-emitting layers. The insulating layer may be configured to cover a portion of the upper surface of the island-shaped EL layers. It is preferable to use a material that has barrier properties against water and oxygen as the insulating layer. For example, an inorganic insulating film that does not easily diffuse water or oxygen can be used. This suppresses the degradation of the EL layer and enables the realization of a highly reliable display device.

[0149] Furthermore, there is a region (recess) between two adjacent light-emitting elements where neither light-emitting element has an EL layer. When a common electrode, or a common electrode and common layer, is formed to cover this recess, a phenomenon called "step break" may occur where the common electrode is separated by a step at the edge of the EL layer, and the common electrode on the EL layer may become insulated. Therefore, it is preferable to fill the local step located between two adjacent light-emitting elements with a resin layer that functions as a planarizing film (also called LFP: Local Filling Planarization). This resin layer has the function of a planarizing film. This suppresses step breaks in the common layer or common electrode, and enables the realization of a highly reliable display device.

[0150] In the following section, a more specific configuration example of a display device according to one aspect of the present invention will be described with reference to the drawings.

[0151] [Example Configuration] Figure 13A shows a schematic top view of a display device 100 according to one embodiment of the present invention. The display device 100 has multiple red-emitting light-emitting elements 110R, green-emitting light-emitting elements 110G, and blue-emitting light-emitting elements 110B on a substrate 101. In Figure 13A, the labels R, G, and B are added within the light-emitting area of ​​each light-emitting element to simplify the distinction between them.

[0152] The light-emitting elements 110R, 110G, and 110B are each arranged in a matrix. Figure 13A shows a so-called stripe arrangement, in which light-emitting elements of the same color are arranged in one direction. Note that the arrangement method of the light-emitting elements is not limited to this, and other arrangement methods such as S-stripe arrangement, delta arrangement, Bayer arrangement, and zigzag arrangement may be applied, or a pentile arrangement or diamond arrangement may be used.

[0153] For the light-emitting elements 110R, 110G, and 110B, it is preferable to use, for example, OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials for the EL element include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. Not only organic compounds but also inorganic compounds (such as quantum dot materials) can be used as light-emitting materials for the EL element.

[0154] Figure 13A also shows a connecting electrode 111C that is electrically connected to the common electrode 113. The connecting electrode 111C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 113. The connecting electrode 111C is located outside the display area where the light-emitting elements 110R and the like are arranged.

[0155] The connecting electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 111C can be strip-shaped (rectangle), L-shaped, U-shaped (angle bracket-shaped), or quadrilateral. In this specification, the top surface shape of a component refers to the contour shape of that component in a plan view. A plan view refers to a view from the direction normal to the surface on which the component is formed, or the surface of the support (e.g., substrate) on which the component is formed.

[0156] Figures 13B and 13C are schematic cross-sectional views corresponding to the dashed-dotted lines A1-A2 and A3-A4 in Figure 13A, respectively. Figure 13B shows schematic cross-sectional views of the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, while Figure 13C shows schematic cross-sectional views of the connection portion 140 to which the connecting electrode 111C and the common electrode 113 are connected.

[0157] The light-emitting element 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-emitting element 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The common layer 114 and the common electrode 113 are provided in common to the light-emitting elements 110R, 110G, and 110B.

[0158] The organic layer 112R of the light-emitting element 110R contains at least a luminescent organic compound that emits red light. The organic layer 112G of the light-emitting element 110G contains at least a luminescent organic compound that emits green light. The organic layer 112B of the light-emitting element 110B contains at least a luminescent organic compound that emits blue light. The organic layers 112R, 112G, and 112B can also be called EL layers and each contains at least a luminescent organic compound (luminescent layer).

[0159] In the following, when describing matters common to the light-emitting element 110R, light-emitting element 110G, and light-emitting element 110B, they may be referred to simply as light-emitting element 110. Similarly, for components distinguished by letters, such as organic layer 112R, organic layer 112G, and organic layer 112B, when describing matters common to these components, the letters may be omitted and symbols used.

[0160] The organic layer 112 and the common layer 114 can each independently have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 may have a stacked structure of a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer from the pixel electrode 111 side, and the common layer 114 may have an electron injection layer.

[0161] Pixel electrodes 111R, 111G, and 111B are provided for each light-emitting element. A common electrode 113 and a common layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, and a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be made. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be made.

[0162] A protective layer 121 is provided on the common electrode 113, covering the light-emitting elements 110R, 110G, and 110B. The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting element from above.

[0163] It is preferable that the end of the pixel electrode 111 has a tapered shape. When the end of the pixel electrode has a tapered shape, the organic layer 112 provided along the side surface of the pixel electrode also has a tapered shape. By making the side surface of the pixel electrode tapered, the coverage of the EL layer provided along the side surface of the pixel electrode can be improved. Furthermore, by making the side surface of the pixel electrode tapered, it becomes easier to remove foreign matter (for example, dust or particles) during the manufacturing process through processes such as washing, which is preferable.

[0164] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°.

[0165] The organic layer 112 is processed into island-like structures using photolithography. As a result, the organic layer 112 has a shape where the angle between the top surface and the side surface is close to 90 degrees at its edges. On the other hand, organic films formed using FMM (Fine Metal Mask) or the like tend to gradually become thinner towards the edges. For example, the top surface is formed in a sloping shape over a range of 1 μm to 10 μm from the edge, making it difficult to distinguish between the top surface and the side surface.

[0166] Between two adjacent light-emitting elements, there is an insulating layer 125, a resin layer 126, and a layer 128.

[0167] Between two adjacent light-emitting elements, the sides of the organic layers 112 of each element face each other with a resin layer 126 in between. The resin layer 126 is located between the two adjacent light-emitting elements and is provided to fill the edges of each organic layer 112 and the region between the two organic layers 112. The upper surface of the resin layer 126 has a smooth convex shape, and a common layer 114 and a common electrode 113 are provided covering the upper surface of the resin layer 126.

[0168] The resin layer 126 functions as a planarizing film that fills the step between two adjacent light-emitting elements. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being separated by the step at the edge of the organic layer 112 (also called step breakage), and to prevent the common electrode on the organic layer 112 from becoming insulated. The resin layer 126 can also be called an LFP (Local Filling Planarization) layer.

[0169] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.

[0170] Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0171] The resin layer 126 may contain a material that absorbs visible light. For example, the resin layer 126 itself may be composed of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light. As the resin layer 126, for example, a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix can be used.

[0172] The insulating layer 125 is provided in contact with the side surface of the organic layer 112. The insulating layer 125 also covers the upper end of the organic layer 112. Furthermore, a portion of the insulating layer 125 is provided in contact with the upper surface of the substrate 101.

[0173] The insulating layer 125 is located between the resin layer 126 and the organic layer 112 and functions as a protective film to prevent the resin layer 126 from coming into contact with the organic layer 112. If the organic layer 112 and the resin layer 126 come into contact, the organic layer 112 may dissolve due to organic solvents used during the formation of the resin layer 126. Therefore, as shown in this embodiment, by providing an insulating layer 125 between the organic layer 112 and the resin layer 126, it is possible to protect the sides of the organic layer.

[0174] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, by applying an oxide metal film such as an aluminum oxide film or hafnium oxide film formed by the ALD method, or an inorganic insulating film such as a silicon oxide film, to the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer can be formed.

[0175] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0176] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0177] Alternatively, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) may be provided between the insulating layer 125 and the resin layer 126, and the light emitted from the light-emitting layer may be reflected by the reflective film. This can improve the light extraction efficiency.

[0178] Layer 128 is formed when a portion of the protective layer (also called a mask layer or sacrificial layer) used to protect the organic layer 112 remains after etching the organic layer 112. The material used for layer 128 can be the same material used for the insulating layer 125. In particular, using the same material for both layer 128 and the insulating layer 125 is preferable because it allows for the use of common processing equipment.

[0179] In particular, metal oxide films such as aluminum oxide films and hafnium oxide films, or inorganic insulating films such as silicon oxide films, formed by the ALD method have few pinholes, and therefore have excellent protective properties for the EL layer, making them suitable for use in insulating layers 125 and 128.

[0180] A protective layer 121 is provided covering the common electrode 113.

[0181] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon oxide nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials or conductive materials such as indium gallium oxide, indium zinc oxide, indium tin oxide, and indium gallium zinc oxide may be used as the protective layer 121.

[0182] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array, etc.) is provided above the protective layer 121.

[0183] Figure 13C shows a connection portion 140 where the connecting electrode 111C and the common electrode 113 are electrically connected. In the connection portion 140, openings are provided in the insulating layer 125 and the resin layer 126 on the connecting electrode 111C. The connecting electrode 111C and the common electrode 113 are electrically connected at these openings.

[0184] Figure 13C shows a connection portion 140 where the connecting electrode 111C and the common electrode 113 are electrically connected. However, the common electrode 113 may be provided on the connecting electrode 111C via a common layer 114. In particular, when a carrier-injected layer is used for the common layer 114, the electrical resistivity of the material used for the common layer 114 can be sufficiently low and it can be formed to be thin, so there is often no problem even if the common layer 114 is located at the connection portion 140. As a result, the common electrode 113 and the common layer 114 can be formed using the same shielding mask, thereby reducing manufacturing costs.

[0185] The above is a description of an example of a display device configuration.

[0186] [Pixel layout] The following section primarily describes a pixel layout different from that shown in Figure 13A. There are no particular limitations on the arrangement of light-emitting elements (sub-pixels), and various methods can be applied.

[0187] Furthermore, the top surface shape of the sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting element.

[0188] The pixel 150 shown in Figure 14A has an S-stripe array applied to it. The pixel 150 shown in Figure 14A is composed of three subpixels: light-emitting elements 110a, 110b, and 110c. For example, light-emitting element 110a may be a blue light-emitting element, light-emitting element 110b may be a red light-emitting element, and light-emitting element 110c may be a green light-emitting element.

[0189] The pixel 150 shown in Figure 14B has a light-emitting element 110a with a roughly trapezoidal top surface shape with rounded corners, a light-emitting element 110b with a roughly triangular top surface shape with rounded corners, and a light-emitting element 110c with a roughly square or roughly hexagonal top surface shape with rounded corners. Furthermore, the light-emitting element 110a has a larger light-emitting area than the light-emitting element 110b. Thus, the shape and size of each light-emitting element can be determined independently. For example, the more reliable the light-emitting element, the smaller its size can be. For example, light-emitting element 110a may be a green light-emitting element, light-emitting element 110b may be a red light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0190] A Pentile array is applied to pixels 124a and 124b shown in Figure 14C. Figure 14C shows an example in which pixels 124a having light-emitting elements 110a and 110b and pixels 124b having light-emitting elements 110b and 110c are arranged alternately. For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b may be a green light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0191] Pixels 124a and 124b shown in Figures 14D and 14E employ a delta array. Pixel 124a has two light-emitting elements (elementary elements 110a and 110b) in the top row (1st row) and one light-emitting element (elementary element 110c) in the bottom row (2nd row). Pixel 124b has one light-emitting element (elementary element 110c) in the top row (1st row) and two light-emitting elements (elementary elements 110a and 110b) in the bottom row (2nd row). For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b may be a green light-emitting element, and light-emitting element 110c may be a blue light-emitting element.

[0192] Figure 14D shows an example where each light-emitting element has a roughly square top shape with rounded corners, and Figure 14E shows an example where each light-emitting element has a circular top shape.

[0193] Figure 14F shows an example where light-emitting elements of each color are arranged in a zigzag pattern. Specifically, in a top view, the upper edges of two light-emitting elements arranged in a column (for example, light-emitting elements 110a and 110b, or light-emitting elements 110b and 110c) are offset. For example, light-emitting element 110a may be a red light-emitting element, light-emitting element 110b a green light-emitting element, and light-emitting element 110c a blue light-emitting element.

[0194] In photolithography, the finer the pattern to be processed, the more significant the effects of light diffraction become. This compromises the fidelity of transferring the pattern to the photomask through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to form. Consequently, the top surface shape of the light-emitting element may be a polygon with rounded corners, an ellipse, or a circle.

[0195] Furthermore, in a method for manufacturing a display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film that is not sufficiently cured may take a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, or a circle. For example, if an attempt is made to form a resist mask with a square top surface, a resist mask with a circular top surface may be formed, resulting in a circular top surface shape for the EL layer.

[0196] Furthermore, in order to achieve the desired shape of the upper surface of the EL layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0197] The above is an explanation of pixel layout.

[0198] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0199] (Embodiment 4) This embodiment describes an example of the configuration of a display device that can be applied to an image processing system according to one aspect of the present invention.

[0200] The display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines like pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal digital assistants, audio playback devices, and goggle-type displays.

[0201] [Display device 400] Figure 15 shows a perspective view of the display device 400, and Figure 16A shows a cross-sectional view of the display device 400.

[0202] The display device 400 has a configuration in which substrate 454 and substrate 451 are bonded together. In Figure 15, substrate 454 is clearly indicated by a dashed line.

[0203] The display device 400 includes a display unit 462, a circuit 464, wiring 465, etc. Figure 15 shows an example in which IC 473 and FPC 472 are mounted on the display device 400. Therefore, the configuration shown in Figure 15 can also be described as a display module having the display device 400, an IC (integrated circuit), and an FPC.

[0204] For example, a scan line drive circuit can be used as circuit 464.

[0205] Wiring 465 has the function of supplying signals and power to the display unit 462 and the circuit 464. These signals and power are input to wiring 465 from an external source via FPC 472 or from IC 473.

[0206] Figure 15 shows an example in which IC 473 is mounted on the substrate 451 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 473 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 400 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0207] Figure 16A shows an example of a cross-section of the display device 400 when a portion of the area including the FPC 472, a portion of the circuit 464, a portion of the display unit 462, and a portion of the area including the connection portion are cut. In Figure 16A, an example of a cross-section is shown when a portion of the display unit 462, in particular, including the green light-emitting element 430b and the blue light-emitting element 430c, is cut.

[0208] The display device 400 shown in Figure 16A has transistors 202, 210, light-emitting elements 430b, and 430c between substrates 453 and 454.

[0209] Here, if the pixels of the display device have three types of subpixels, each having a different light-emitting color, examples of such three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of such four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0210] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided in overlap with the light-emitting elements 430b and 430c, respectively, and a solid encapsulation structure is applied to the display device 400.

[0211] The light-emitting element 430b and 430c have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0212] The conductive layer 411a is connected to the conductive layer 222b of the transistor 210 through an opening provided in the insulating layer 214. The transistor 210 has the function of controlling the driving of the light-emitting element.

[0213] An EL layer 412G or EL layer 412B is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412G and the EL layer 412B, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. A layer 424 is provided between the EL layer 412G and the insulating layer 421, and between the EL layer 412B and the insulating layer 421, respectively. A common layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the EL layer 412B.

[0214] The light emitted by the light-emitting element is projected towards the substrate 454. It is preferable to use a material with high transmittance to visible light for the substrate 454.

[0215] Both transistors 202 and 210 are formed on the substrate 451. These transistors can be manufactured using the same materials and the same process.

[0216] The substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455.

[0217] The method for manufacturing the display device 400 involves first bonding a fabricated substrate, on which an insulating layer 212, transistors, light-emitting elements, etc., are provided, to a substrate 454 using an adhesive layer 442. Then, the fabricated substrate is peeled off and the substrate 453 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 453. It is preferable that both the substrate 453 and the substrate 454 are flexible. This increases the flexibility of the display device 400.

[0218] The insulating layer 212 can be made of an inorganic insulating film that can be used for the insulating layer 211 and the insulating layer 215, respectively.

[0219] A connection portion 204 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 204, wiring 465 is electrically connected to FPC 472 via conductive layer 466 and connection layer 242. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 204 and FPC 472 to be electrically connected via the connection layer 242.

[0220] Transistors 202 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i.

[0221] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n via openings provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0222] Figure 16A shows an example in which the insulating layer 225 covers the top and sides of the semiconductor layer. The conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and insulating layer 215, respectively.

[0223] On the other hand, in the transistor 209 shown in Figure 16B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 16B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 16B, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215. Furthermore, an insulating layer 218 covering the transistor may also be provided.

[0224] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0225] Transistors 202 and 210 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0226] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0227] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0228] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0229] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0230] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0231] The transistors in circuit 464 and the transistors in display unit 462 may have the same structure or different structures. The structures of the multiple transistors in circuit 464 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 462 may all be the same or there may be two or more different structures.

[0232] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0233] It is preferable to use an inorganic insulating film for insulating layer 211, insulating layer 212, insulating layer 215, insulating layer 218, and insulating layer 225. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0234] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0235] Various optical components can be arranged along the inner or outer surface of the substrate 454. Examples of optical components include light-shielding layers, polarizing plates, phase difference plates, light-diffusing layers (such as diffusion films), anti-reflective layers, microlens arrays, and light-gathering films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be arranged on the outer surface of the substrate 454.

[0236] By providing a protective layer 416 that covers the light-emitting element, it is possible to suppress the ingress of impurities such as water into the light-emitting element and improve the reliability of the light-emitting element.

[0237] Figure 16A shows the connection section 228. At the connection section 228, the common electrode 413 and the wiring are electrically connected. Figure 16A shows an example where the same stacked structure as the pixel electrode is applied as the wiring.

[0238] Substrates 453 and 454 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. Using flexible materials for substrates 453 and 454 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 453 or substrate 454.

[0239] Substrates 453 and 454 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass of a thickness sufficient to provide flexibility.

[0240] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0241] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0242] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0243] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0244] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0245] [Display device 400A] The display device 400A shown in Figure 17 is an example of a liquid crystal display device that uses liquid crystal elements as display elements.

[0246] The display device 400A has transistors 201, 205, and liquid crystal elements 480, etc., between substrate 456 and substrate 454.

[0247] Figure 17 shows bottom-gate transistors as transistors 201 and 205. Transistors 201 and 205 have a conductive layer 221 that functions as a gate electrode, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231, conductive layers 222a and 222b that function as source and drain electrodes, a conductive layer 223 that functions as a second gate electrode, and an insulating layer 213 that functions as a second gate insulating layer. The transistors are covered with an insulating layer 215.

[0248] It is preferable that transistors 201 and 205 have a metal oxide in their semiconductor layer 231.

[0249] The liquid crystal element 480 shown in Figure 17 is a transverse electric field type liquid crystal element. The liquid crystal element 480 has a pixel electrode 481, a common electrode 482, and a liquid crystal layer 483. The common electrode 482 is provided on the pixel electrode via an insulating layer 484. The liquid crystal layer 483 is provided on the pixel electrode 481 and the common electrode 482.

[0250] On the substrate 456 side of substrate 454, a color filter 452R, a color filter 452G, and a light-shielding layer BM are provided, and an overcoat 487 is provided to cover them. Color filters 452R and 452G transmit light of different colors from each other.

[0251] Alignment films 485 and 486 are provided in contact with the liquid crystal layer 483. Alignment film 485 is provided covering the insulating layer 484 and the common electrode 482. Alignment film 486 is provided covering the overcoat 487.

[0252] A backlight unit 491 is provided outside the substrate 456, and a polarizing plate 492 is provided between the substrate 456 and the backlight unit 491. Additionally, a polarizing plate 493 is provided outside the substrate 454.

[0253] Light from the backlight unit 491 is emitted to the outside of the display device via a polarizing plate 492, a substrate 456, a pixel electrode 481, a common electrode 482, a liquid crystal layer 483, a color filter 452R, another polarizing plate 493, and a substrate 454. The orientation of the liquid crystal is controlled according to the potential difference between the pixel electrode 481 and the common electrode 482, and the amount of transmitted light changes. Materials that transmit visible light are used for these layers through which the light from the backlight unit 491 is transmitted.

[0254] The liquid crystal layer 483 can be made of thermotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC), polymer network liquid crystal (PNLC), ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. Furthermore, when employing a transverse electric field method, a liquid crystal exhibiting a blue phase without an alignment layer may be used.

[0255] Furthermore, various modes can be used for the liquid crystal elements, including TN (Twisted Nematic) mode, VA (Vertical Alignment) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetric aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, ECB (Electrically Controlled Birefringence) mode, and guest host mode.

[0256] Furthermore, a scattering-type liquid crystal can be used in the liquid crystal layer 483, such as a polymer-dispersed liquid crystal or a polymer-network liquid crystal. In this case, the configuration may be one that displays in black and white without a color filter 452R, or one that displays in color using a color filter 452R.

[0257] Furthermore, a time-division display method (also called a field sequential drive method) that performs color display based on a time-additive color mixing method may be applied as a driving method for the liquid crystal elements. In that case, a configuration without a color filter 452R, etc., can be used. When using a time-division display method, there is no need to provide sub-pixels that exhibit each of the colors, such as R (red), G (green), and B (blue), which has advantages such as improving the aperture ratio of the pixels and increasing the resolution.

[0258] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0259] (Embodiment 5) This embodiment describes a light-emitting element (also called a light-emitting device) that can be used in a display device of an image processing system according to one aspect of the present invention.

[0260] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0261] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to become a light-emitting device for a full-color display device.

[0262] [Light-emitting devices] Light-emitting devices can be broadly classified into single-layer and tandem-layer structures. A single-layer device has one light-emitting unit between a pair of electrodes. This light-emitting unit includes one or more light-emitting layers. To obtain white light emission in a single-layer structure, one should select light-emitting layers such that the light emitted by each of the two or more layers can produce white light. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration that produces white light emission as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the light-emitting device should be configured so that the light-emitting colors of the three or more layers combine to produce white light emission as a whole.

[0263] A tandem device has multiple light-emitting units between a pair of electrodes. Each light-emitting unit includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be achieved compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units should be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as in a single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0264] When comparing white light-emitting devices with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. On the other hand, white light-emitting devices have a simpler manufacturing process than SBS structure light-emitting devices, resulting in lower manufacturing costs and higher manufacturing yields.

[0265] <Example of light-emitting device configuration> As shown in Figure 18A, the light-emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762). The EL layer 763 can be composed of multiple layers, such as layer 780, light-emitting layer 771, and layer 790.

[0266] The light-emitting layer 771 has at least a light-emitting substance (also called a light-emitting material).

[0267] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, layer 780 has one or more of the following: a layer containing a material with high hole injection properties (hole injection layer), a layer containing a material with high hole transport properties (hole transport layer), and a layer containing a material with high electron blocking properties (electron blocking layer). Similarly, layer 790 has one or more of the following: a layer containing a material with high electron injection properties (electron injection layer), a layer containing a material with high electron transport properties (electron transport layer), and a layer containing a material with high hole blocking properties (hole blocking layer). When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layers 780 and 790 have the opposite configurations to those described above.

[0268] A configuration having a layer 780, an emissive layer 771, and a layer 790 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 18A is referred to as a single structure.

[0269] Furthermore, Figure 18B shows a modified example of the EL layer 763 of the light-emitting device shown in Figure 18A. Specifically, the light-emitting device shown in Figure 18B has a layer 781 on the lower electrode 761, a layer 782 on the layer 781, a light-emitting layer 771 on the layer 782, a layer 791 on the light-emitting layer 771, a layer 792 on the layer 791, and an upper electrode 762 on the layer 792.

[0270] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, for example, layer 781 can be a hole injection layer, layer 782 a hole transport layer, layer 791 an electron transport layer, and layer 792 an electron injection layer. Also, when the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layer 781 can be an electron injection layer, layer 782 an electron transport layer, layer 791 a hole transport layer, and layer 792 a hole injection layer. By using such a layer structure, carriers can be efficiently injected into the light-emitting layer 771, and the efficiency of carrier recombination within the light-emitting layer 771 can be increased.

[0271] As shown in Figures 18C and 18D, a configuration in which multiple light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layer 780 and layer 790 is also a variation of the single structure. Although Figures 18C and 18D show an example with three light-emitting layers, the number of light-emitting layers in a single-structure light-emitting device may be two or four or more. Furthermore, a single-structure light-emitting device may have a buffer layer between the two light-emitting layers.

[0272] Furthermore, as shown in Figures 18E and 18F, a configuration in which multiple light-emitting units (light-emitting units 763a and 763b) are connected in series via a charge generation layer 785 (also called an intermediate layer) is referred to as a tandem structure in this specification. The tandem structure may also be called a stacked structure. By using a tandem structure, a light-emitting device capable of high-brightness emission can be created. In addition, compared to a single structure, the tandem structure can reduce the current required to obtain the same brightness, thereby improving reliability.

[0273] Note that FIGS. 18D and 18F are examples where the display device has a layer 764 that overlaps with the light-emitting device. FIG. 18D is an example where the layer 764 overlaps with the light-emitting device shown in FIG. 18C, and FIG. 18F is an example where the layer 764 overlaps with the light-emitting device shown in FIG. 18E. In FIGS. 18D and 18F, in order to extract light on the upper electrode 762 side, a conductive film that transmits visible light is used for the upper electrode 762.

[0274] As the layer 764, one or both of a color conversion layer and a color filter (colored layer) can be used.

[0275] [[ID=#7]] In FIGS. 18C and 18D, the same light-emitting substance that emits light of the same color, and further, the same light-emitting substance may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773. For example, a light-emitting substance that emits blue light may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773. In the sub-pixel that exhibits blue light, the blue light emitted by the light-emitting device can be extracted. Further, in the sub-pixel that exhibits red light and the sub-pixel that exhibits green light, by providing a color conversion layer as the layer 764 shown in FIG. 18D, the blue light emitted by the light-emitting device is converted into light of a longer wavelength, and red or green light can be extracted. Further, as the layer 764, it is preferable to use both a color conversion layer and a colored layer. A part of the light emitted by the light-emitting device may pass through the color conversion layer as it is without being converted. By extracting the light that has passed through the color conversion layer through the colored layer, light other than the light of the desired color is absorbed by the colored layer, and the color purity of the light exhibited by the sub-pixel can be increased.

[0276] Further, in FIGS. 18C and 18D, light-emitting substances having different emission colors may be used for the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773. By appropriately combining the lights emitted by the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 7, white light emission can be obtained. For example, a light-emitting device having a single structure preferably has a light-emitting layer having a light-emitting substance that emits blue light and a light-emitting layer having a light-emitting substance that emits visible light having a longer wavelength than blue.

[0277] A color filter may be provided as layer 764, as shown in Figure 18D. By passing white light through the color filter, light of the desired color can be obtained.

[0278] For example, if a single-structure light-emitting device has three light-emitting layers, it is preferable that it has a light-emitting layer having a light-emitting material that emits red (R) light, a light-emitting layer having a light-emitting material that emits green (G) light, and a light-emitting layer having a light-emitting material that emits blue (B) light. The stacking order of the light-emitting layers can be R, G, B from the anode side, or R, B, G from the anode side, etc. In this case, a buffer layer may be provided between R and G or B.

[0279] Furthermore, for example, when a single-structure light-emitting device has two light-emitting layers, a configuration is preferred in which one light-emitting layer has a light-emitting material that emits blue (B) light, and the other light-emitting layer has a light-emitting material that emits yellow (Y) light. This configuration may be referred to as a BY single-structure light-emitting device.

[0280] Furthermore, in Figures 18C and 18D, as shown in Figure 18B, layer 780 and layer 790 may each be independently constructed as a laminated structure consisting of two or more layers.

[0281] Furthermore, in Figures 18E and 18F, the light-emitting layer 771 and the light-emitting layer 772 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, in a light-emitting device having sub-pixels that emit light of each color, the light-emitting layer 771 and the light-emitting layer 772 may each be made of light-emitting materials that emit blue light. In the sub-pixels that emit blue light, the blue light emitted by the light-emitting device can be extracted. In addition, in the sub-pixels that emit red light and the sub-pixels that emit green light, by providing a color conversion layer as layer 764 as shown in Figure 18F, the blue light emitted by the light-emitting device can be converted into longer wavelength light, and red or green light can be extracted. Furthermore, it is preferable to use both a color conversion layer and a coloring layer as layer 764.

[0282] Furthermore, when using light-emitting devices with the configuration shown in Figure 18E or Figure 18F for sub-pixels that emit light of each color, different light-emitting materials may be used for each sub-pixel. Specifically, in a light-emitting device for a sub-pixel that emits red light, light-emitting materials that emit red light may be used for both the light-emitting layer 771 and the light-emitting layer 772. Similarly, in a light-emitting device for a sub-pixel that emits green light, light-emitting materials that emit green light may be used for both the light-emitting layer 771 and the light-emitting layer 772. In a light-emitting device for a sub-pixel that emits blue light, light-emitting materials that emit blue light may be used for both the light-emitting layer 771 and the light-emitting layer 772. A display device with such a configuration can be said to have a tandem structure light-emitting device and an SBS structure. Therefore, it can combine the advantages of both the tandem structure and the SBS structure. This enables high-brightness light emission and realizes a highly reliable light-emitting device.

[0283] Furthermore, in Figures 18E and 18F, different luminescent materials with different emission colors may be used for the luminescent layer 771 and the luminescent layer 772. When the light emitted by the luminescent layer 771 and the light emitted by the luminescent layer 772 are complementary colors, white light emission is obtained. A color filter may be provided as layer 764 as shown in Figure 18F. By passing white light through the color filter, light of a desired color can be obtained.

[0284] In Figures 18E and 18F, examples are shown in which the light-emitting unit 763a has one light-emitting layer 771 and the light-emitting unit 763b has one light-emitting layer 772, but the design is not limited to this. The light-emitting unit 763a and the light-emitting unit 763b may each have two or more light-emitting layers.

[0285] Furthermore, while Figures 18E and 18F illustrate a light-emitting device having two light-emitting units, the device is not limited to this. A light-emitting device may have three or more light-emitting units. A configuration with two light-emitting units may be referred to as a two-stage tandem structure, and a configuration with three light-emitting units may be referred to as a three-stage tandem structure.

[0286] Furthermore, in Figures 18E and 18F, the light-emitting unit 763a has layer 780a, light-emitting layer 771, and layer 790a, and the light-emitting unit 763b has layer 780b, light-emitting layer 772, and layer 790b.

[0287] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, layers 780a and 780b each have one or more of the following: a hole injection layer, a hole transport layer, and an electron blocking layer. Similarly, layers 790a and 790b each have one or more of the following: an electron injection layer, an electron transport layer, and a hole blocking layer. When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layers 780a and 790a have the opposite configurations to those described above, and layers 780b and 790b also have the opposite configurations to those described above.

[0288] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, for example, layer 780a has a hole injection layer and a hole transport layer on the hole injection layer, and may further have an electron blocking layer on the hole transport layer. Also, layer 790a has an electron transport layer and may further have a hole blocking layer between the light-emitting layer 771 and the electron transport layer. Also, layer 780b has a hole transport layer and may further have an electron blocking layer on the hole transport layer. Also, layer 790b has an electron transport layer and an electron injection layer on the electron transport layer, and may further have a hole blocking layer between the light-emitting layer 772 and the electron transport layer. When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, for example, layer 780a has an electron injection layer and an electron transport layer on the electron injection layer, and may further have a hole blocking layer on the electron transport layer. Furthermore, layer 790a may have a hole transport layer and an electron blocking layer between the light-emitting layer 771 and the hole transport layer. Also, layer 780b may have an electron transport layer and an electron blocking layer on the electron transport layer. Furthermore, layer 790b may have a hole transport layer and a hole injection layer on the hole transport layer, and an electron blocking layer between the light-emitting layer 772 and the hole transport layer.

[0289] Furthermore, when fabricating a tandem light-emitting device, the two light-emitting units are stacked with a charge generation layer 785 in between. The charge generation layer 785 has at least a charge generation region. The charge generation layer 785 has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.

[0290] Furthermore, an example of a tandem-structured light-emitting device is the configuration shown in Figures 19A to 19C.

[0291] Figure 19A shows a configuration having three light-emitting units. In Figure 19A, multiple light-emitting units (light-emitting units 763a, 763b, and 763c) are connected in series via a charge generation layer 785. Light-emitting unit 763a has layer 780a, light-emitting layer 771, and layer 790a; light-emitting unit 763b has layer 780b, light-emitting layer 772, and layer 790b; and light-emitting unit 763c has layer 780c, light-emitting layer 773, and layer 790c. Layer 780c can use a configuration applicable to layers 780a and 780b, and layer 790c can use a configuration applicable to layers 790a and 790b.

[0292] In Figure 19A, it is preferable that the light-emitting layers 771, 772, and 773 each have a light-emitting material that emits light of the same color. Specifically, the light-emitting layers 771, 772, and 773 can each have a red (R) light-emitting material (a so-called R\R\R three-stage tandem structure), the light-emitting layers 771, 772, and 773 can each have a green (G) light-emitting material (a so-called G\G\G three-stage tandem structure), or the light-emitting layers 771, 772, and 773 can each have a blue (B) light-emitting material (a so-called B\B\B three-stage tandem structure). Note that "a\b" means that a light-emitting unit having a light-emitting material has a light-emitting material that emits light a, and a light-emitting unit having a light-emitting material that emits light b is provided on the light-emitting unit having a light-emitting material via a charge generation layer, and a and b mean colors.

[0293] Furthermore, in Figure 19A, some or all of the light-emitting layers 771, 772, and 773 may be made of light-emitting materials with different emission colors. Examples of combinations of emission colors for light-emitting layers 771, 772, and 773 include a configuration where two are blue (B) and the remaining one is yellow (Y), and a configuration where one is red (R), another is green (G), and the remaining one is blue (B).

[0294] The light-emitting materials that each emit light of the same color are not limited to the above configuration. For example, as shown in Figure 19B, a tandem-type light-emitting device may be used in which multiple light-emitting units having multiple light-emitting layers are stacked. Figure 19B shows a configuration in which two light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge-generating layer 785. Light-emitting unit 763a has layer 780a, light-emitting layers 771a, 771b, and 771c, and layer 790a, while light-emitting unit 763b has layer 780b, light-emitting layers 772a, 772b, and 772c, and layer 790b.

[0295] In Figure 19B, luminescent materials with complementary colors are selected for luminescent layers 771a, 771b, and 771c, and the luminescent unit 763a is configured to emit white light (W). Similarly, luminescent materials with complementary colors are selected for luminescent layers 772a, 772b, and 772c, and the luminescent unit 763b is configured to emit white light (W). In other words, the configuration shown in Figure 19B is a two-stage tandem structure of W\W. There are no particular limitations on the stacking order of the complementary luminescent materials. The implementer can select the optimal stacking order as appropriate. In addition, although not shown, a three-stage tandem structure of W\W\W or a tandem structure of four or more stages may also be used.

[0296] Also, when using a tandem-structured light-emitting device, there are a two-stage tandem structure of B\Y or Y\B having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, a two-stage tandem structure of R·G\B or B\R·G having a light-emitting unit that emits red (R) and green (G) light and a light-emitting unit that emits blue (B) light, a three-stage tandem structure of B\Y\B having a light-emitting unit that emits blue (B) light, a light-emitting unit that emits yellow (Y) light, and a light-emitting unit that emits blue (B) light in this order, a three-stage tandem structure of B\YG\B having a light-emitting unit that emits blue (B) light, a light-emitting unit that emits yellow-green (YG) light, and a light-emitting unit that emits blue (B) light in this order, a three-stage tandem structure of B\G\B having a light-emitting unit that emits blue (B) light, a light-emitting unit that emits green (G) light, and a light-emitting unit that emits blue (B) light in this order, etc. Here, "a·b" means that one light-emitting unit has a light-emitting substance that emits a light and a light-emitting substance that emits b light.

[0297] Also, as shown in FIG. 19C, a light-emitting unit having one light-emitting layer and a light-emitting unit having a plurality of light-emitting layers may be combined.

[0298] Specifically, in the configuration shown in FIG. 19C, a configuration in which a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via a charge generation layer 785, respectively. Also, the light-emitting unit 763a has a layer 780a, a light-emitting layer 771, and a layer 790a, the light-emitting unit 763b has a layer 780b, light-emitting layers 772a, 772b, and 772c, and a layer 790b, and the light-emitting unit 763c has a layer 780c, a light-emitting layer 773, and a layer 790c.

[0299] For example, in the configuration shown in Figure 19C, a three-stage tandem structure of B\R·G·YG\B can be applied, where light-emitting unit 763a is a light-emitting unit that emits blue (B) light, light-emitting unit 763b is a light-emitting unit that emits red (R), green (G), and yellow-green (YG) light, and light-emitting unit 763c is a light-emitting unit that emits blue (B) light.

[0300] For example, the number of layers and color order of the light-emitting unit can be, from the anode side, a two-layer structure of B and Y, a two-layer structure of B and light-emitting unit X, a three-layer structure of B, Y, B, or a three-layer structure of B, X, B. The number of layers and color order of the light-emitting layers in light-emitting unit X can be, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, a two-layer structure of G and R, a three-layer structure of G, R, G, or a three-layer structure of R, G, R. In addition, other layers may be provided between the two light-emitting layers.

[0301] Next, we will describe materials that can be used in light-emitting devices.

[0302] Of the lower electrode 761 and upper electrode 762, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. In addition, if the display device has a light-emitting device that emits infrared light, it is preferable to use a conductive film that transmits both visible light and infrared light on the electrode that extracts light, and a conductive film that reflects both visible light and infrared light on the electrode that does not extract light.

[0303] Furthermore, a conductive film that transmits visible light may also be used on the electrode that does not extract light. In this case, it is preferable to place the electrode between the reflective layer and the EL layer 763. In other words, the light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.

[0304] As the material for forming the pair of electrodes of the light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, and alloys containing these in appropriate combinations. Other examples of such materials include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide. Furthermore, such materials include aluminum-containing alloys (aluminum alloys) such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), as well as silver-containing alloys such as silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also written as APC). Other materials include elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium, cesium, calcium, strontium), rare earth metals such as europium and ytterbium, alloys containing these in appropriate combinations, graphene, and the like.

[0305] It is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0306] Furthermore, the semi-transparent / semi-reflective electrode can have a laminated structure consisting of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that transmits visible light (also called a transparent electrode).

[0307] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm) for the transparent electrode of a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0308] A light-emitting device has at least a light-emitting layer. Furthermore, a light-emitting device may have layers other than the light-emitting layer, including materials with high hole injection properties, materials with high hole transport properties, hole-blocking materials, materials with high electron transport properties, electron-blocking materials, materials with high electron injection properties, or bipolar materials (materials with high electron and hole transport properties). For example, a light-emitting device may have, in addition to the light-emitting layer, one or more layers from among a hole injection layer, a hole transport layer, a hole-blocking layer, a charge generation layer, an electron-blocking layer, an electron transport layer, and an electron injection layer.

[0309] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0310] The light-emitting layer contains one or more types of light-emitting materials. The light-emitting materials may include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. Furthermore, materials emitting near-infrared light may also be used as light-emitting materials.

[0311] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0312] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0313] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0314] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more types of organic compounds may include materials with high hole transport properties (hole transport materials) and / or materials with high electron transport properties (electron transport materials). As the hole transport material, one of the materials with high hole transport properties that can be used in the hole transport layer, as described later, may be used. As the electron transport material, one of the materials with high electron transport properties that can be used in the electron transport layer, as described later, may be used. Furthermore, one or more types of organic compounds may include bipolar materials or TADF materials.

[0315] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0316] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0317] As the hole-transporting material, a material with high hole-transporting properties that can be used in the hole-transporting layer, as described later, can be used.

[0318] As acceptor materials, for example, oxides of metals belonging to groups 4 through 8 of the periodic table can be used. Specifically, these include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. Organic acceptor materials containing fluorine can also be used. Furthermore, organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.

[0319] For example, as a material with high hole injection properties, a material containing a hole transport material and an oxide of a metal belonging to Group 4 to Group 8 of the periodic table (typically molybdenum oxide) may be used.

[0320] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0321] The electron blocking layer is provided in contact with the light-emitting layer. The electron blocking layer is a layer containing a material that has hole-transporting properties and is capable of blocking electrons. Among the hole-transporting materials mentioned above, a material with electron-blocking properties can be used for the electron blocking layer.

[0322] Because electron-blocking layers possess hole-transporting properties, they can also be called hole-transporting layers. Furthermore, among hole-transporting layers, those that exhibit electron-blocking properties can also be called electron-blocking layers.

[0323] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0324] The hole-blocking layer is provided in contact with the light-emitting layer. The hole-blocking layer is a layer containing a material that has electron-transporting properties and is capable of blocking holes. Among the electron-transporting materials mentioned above, a material that has hole-blocking properties can be used for the hole-blocking layer.

[0325] Because hole-blocking layers possess electron-transporting properties, they can also be called electron-transporting layers. Furthermore, among electron-transporting layers, those that exhibit hole-blocking properties can also be called hole-blocking layers.

[0326] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0327] Furthermore, it is preferable that the LUMO level of a material with high electron injection capacity has a small difference (specifically, 0.5 eV or less) from the work function value of the material used as the cathode.

[0328] The electron injection layer contains, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may also be a multilayer structure of two or more layers. For example, a multilayer structure in which lithium fluoride is used as the first layer and ytterbium is provided as the second layer can be used.

[0329] The electron injection layer may contain an electron-transporting material. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0330] Furthermore, the lowest unoccupied molecular orbital (LUMO) level of organic compounds containing lone pairs of electrons is preferably between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of organic compounds can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0331] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0332] As described above, the charge generation layer has at least a charge generation region. The charge generation region preferably contains an acceptor material, and preferably contains, for example, a hole transport material and an acceptor material applicable to the hole injection layer described above.

[0333] Furthermore, the charge generation layer preferably includes a layer containing a material with high electron injection potential. This layer can also be called an electron injection buffer layer. The electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. By providing an electron injection buffer layer, the injection barrier between the charge generation region and the electron transport layer can be relaxed, allowing electrons generated in the charge generation region to be easily injected into the electron transport layer.

[0334] The electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can, for example, a compound of an alkali metal or an alkaline earth metal. Specifically, the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen, and more preferably has an inorganic compound containing lithium and oxygen (such as lithium oxide (Li2O)). In addition, any other material applicable to the electron injection layer can be suitably used for the electron injection buffer layer.

[0335] The charge generation layer preferably has a layer containing a material with high electron transport properties. This layer can also be called an electron relay layer. The electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer. The electron relay layer has the function of preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer) and smoothly transferring electrons.

[0336] As the electron relay layer, it is preferable to use a phthalocyanine-based material such as copper(II) phthalocyanine (abbreviated as CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0337] Furthermore, the charge generation region, electron injection buffer layer, and electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.

[0338] The charge generation layer may have a donor material instead of an acceptor material. For example, the charge generation layer may have a layer containing an electron transport material and a donor material, which is applicable to the electron injection layer described above.

[0339] When stacking light-emitting units, the rise in driving voltage can be suppressed by providing a charge generation layer between the two light-emitting units.

[0340] This embodiment can be combined with other embodiments as appropriate.

[0341] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0342] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0343] (Embodiment 6) This embodiment describes a light-receiving device and a display device having light-receiving and light-receiving functions that can be used in a display device according to one aspect of the present invention.

[0344] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0345] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0346] [Light receiving device] As shown in Figure 20A, the photodetector has a layer 765 between a pair of electrodes (lower electrode 761 and upper electrode 762). The layer 765 has at least one active layer and may have other layers.

[0347] Furthermore, Figure 20B shows a modified example of the layer 765 of the photodetector shown in Figure 20A. Specifically, the photodetector shown in Figure 20B has a layer 766 on the lower electrode 761, an active layer 767 on the layer 766, a layer 768 on the active layer 767, and an upper electrode 762 on the layer 768.

[0348] The active layer 767 functions as a photoelectric conversion layer.

[0349] When the lower electrode 761 is the anode and the upper electrode 762 is the cathode, layer 766 has one or both of a hole transport layer and an electron blocking layer. Similarly, layer 768 has one or both of an electron transport layer and a hole blocking layer. When the lower electrode 761 is the cathode and the upper electrode 762 is the anode, layers 766 and 768 have the opposite configurations to those described above.

[0350] Here, in the display device according to one aspect of the present invention, there may be a layer that the light-receiving device and the light-emitting device have in common (which can also be said to be a continuous layer shared by the light-receiving device and the light-emitting device). In such a layer, the functions in the light-emitting device and the light-receiving device may be different. In this specification, components may be named based on their functions in the light-emitting device. For example, the hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Also, the layer that the light-receiving device and the light-emitting device have in common may have the same function in both the light-emitting device and the light-receiving device. For example, the hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and the electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0351] Next, materials that can be used for the light-receiving device will be described.

[0352] Either a low molecular weight compound or a high molecular weight compound can be used for the light-receiving device, and it may contain an inorganic compound. Each layer constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, etc.

[0353] The active layer of the light-receiving device contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example of using an organic semiconductor as the semiconductor in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum vapor deposition), and it is preferable because the manufacturing equipment can be shared.

[0354] Examples of the material of the n-type semiconductor in the active layer include fullerene (for example, C 60 Fullerene, C 70Examples of electron-accepting organic semiconductor materials include fullerenes and fullerene derivatives. Examples of fullerene derivatives include [6,6]-phenyl-C 71 -Methyl butyrate (abbreviation: PC71BM), [6,6]-phenyl-C 61 -Methyl butyrate (abbreviation: PC61BM), 1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 Examples include (abbreviated as ICBA).

[0355] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI), and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviated as FT2TDMN).

[0356] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0357] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (abbreviated as CuPc), tetraphenyldibenzoperifuranthene (abbreviated as DBP), zinc phthalocyanine (abbreviated as ZnPc), tin(II) phthalocyanine (abbreviated as SnPc), quinacridone, and rubrene.

[0358] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0359] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0360] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0361] Furthermore, the active layer can use polymer compounds such as poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0362] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0363] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0364] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, or an electron blocking material. For example, the layers other than the active layer of the photodetector can be made of materials that can be used in the light-emitting devices described above.

[0365] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0366] [Display device with light detection function] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. In addition, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected.

[0367] Furthermore, in one embodiment of the present invention, the light-emitting device can be used as the light source for the sensor. In one embodiment of the present invention, when an object reflects (or scatters) the light emitted by the light-emitting device of the display unit, the light-receiving device can detect the reflected light (or scattered light), thus enabling imaging or touch detection even in dark places.

[0368] Therefore, it is not necessary to provide a light receiving unit and a light source separately from the display device, and the number of components in the electronic device can be reduced. For example, there is no need to separately provide a biometric authentication device or a capacitive touch panel for scrolling, etc., which are provided in the electronic device. Therefore, by using a display device according to one aspect of the present invention, it is possible to provide an electronic device with reduced manufacturing costs.

[0369] Specifically, a display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, an organic EL device is used as the light-emitting device and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0370] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source, while the remaining subpixels display an image.

[0371] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0372] For example, an image sensor can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0373] For example, an image sensor can be used to image the area around the eyes, the surface of the eyes, or the inside of the eyes (such as the fundus) of the wearable device user. Therefore, the wearable device can be equipped with the ability to detect one or more of the user's blinking, pupil movement, and eyelid movement.

[0374] Furthermore, the light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor).

[0375] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen).

[0376] A touch sensor can detect an object by making direct contact with the display device. A near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0377] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or near touch sensor.

[0378] The display device 100 shown in Figures 20C to 20E has a layer 353 having a light-receiving device, a functional layer 355, and a layer 357 having a light-emitting device between substrate 351 and substrate 359.

[0379] The functional layer 355 includes a circuit for driving a light-receiving device and a circuit for driving a light-emitting device. The functional layer 355 may include one or more of the following: switches, transistors, capacitors, resistors, wiring, and terminals. However, when the light-emitting device and light-receiving device are driven in a passive matrix manner, the configuration may be made without switches and transistors.

[0380] For example, as shown in Figure 20C, when a finger 352 touches the display device 100, it reflects the light emitted by the light-emitting device in layer 357, which has a light-emitting device. The light-receiving device in layer 353 detects this reflected light. This makes it possible to detect that the finger 352 has come into contact with the display device 100.

[0381] Furthermore, as shown in Figures 20D and 20E, the device may also have a function to detect or image objects that are close to (but not in contact with) the display device. Figure 20D shows an example of detecting a person's finger, and Figure 20E shows an example of detecting information around, on the surface of, or inside a person's eye (such as the number of blinks, eyeball movements, and eyelid movements).

[0382] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0383] (Embodiment 7) This embodiment describes an example of a transistor configuration that can be applied to a display device (display panel) according to one aspect of the present invention. In particular, it describes a case in which a transistor containing silicon is used as the semiconductor in which the channel is formed.

[0384] One aspect of the present invention is a display panel having a light-emitting device and a pixel circuit. The display panel can be a full-color display panel by having, for example, three types of light-emitting devices (also called light-emitting elements) that emit red (R), green (G), or blue (B) light, respectively.

[0385] It is preferable to use transistors in which the semiconductor layer in which the channel is formed is silicon for all transistors included in the pixel circuit that drives the light-emitting device. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use transistors in which the semiconductor layer is low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) (hereinafter also referred to as LTPS transistors). LTPS transistors have high field-effect mobility and good frequency characteristics.

[0386] By using silicon-based transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits mounted on the display panel, reducing component and mounting costs.

[0387] Furthermore, it is preferable to use a transistor (hereinafter also called an OS transistor) in which a metal oxide (hereinafter also called an oxide semiconductor) is used as the semiconductor in which the channel is formed. Compared to the case in which amorphous silicon is used, the field-effect mobility of the OS transistor is extremely high. In addition, the source-drain leakage current (hereinafter also called the off current) of the OS transistor in the off state is remarkably small, and it is possible to retain the charge stored in the capacitor connected in series with the transistor for a long period of time. Moreover, by applying an OS transistor, the power consumption of the display panel can be reduced.

[0388] By using LTPS transistors for some of the transistors in the pixel circuit and OS transistors for others, a display panel with low power consumption and high driving capability can be realized. A more preferable example is to apply OS transistors to transistors that function as switches to control conduction and non-conductivity between wiring, and LTPS transistors to transistors that control current.

[0389] For example, one of the transistors provided in the pixel circuit functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0390] On the other hand, another transistor provided in the pixel circuit functions as a switch to control the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0391] Below, we will explain more specific configuration examples with reference to the drawings.

[0392] [Example of display panel configuration] Figure 21A shows a block diagram of the display panel 500. The display panel 500 includes a display unit 504, a drive circuit unit 502, a drive circuit unit 503, and the like.

[0393] The display unit 504 has a plurality of pixels 530 arranged in a matrix. Each pixel 530 has sub-pixels 505R, 505G, and 505B. Each of the sub-pixels 505R, 505G, and 505B has a light-emitting device that functions as a display device.

[0394] Pixel 530 is electrically connected to wiring GL, wiring SLR, wiring SLG, and wiring SLB. Wiring SLR, wiring SLG, and wiring SLB are each electrically connected to drive circuit unit 502. Wiring GL is electrically connected to drive circuit unit 503. Drive circuit unit 502 functions as a source line drive circuit (also called a source driver), and drive circuit unit 503 functions as a gate line drive circuit (also called a gate driver). Wiring GL functions as a gate line, and wiring SLR, wiring SLG, and wiring SLB each function as source lines.

[0395] Sub-pixel 505R has a light-emitting device that emits red light. Sub-pixel 505G has a light-emitting device that emits green light. Sub-pixel 505B has a light-emitting device that emits blue light. This allows the display panel 500 to display in full color. Pixel 530 may also have sub-pixels that emit light of other colors. For example, in addition to the three sub-pixels described above, pixel 530 may have a sub-pixel that emits white light, or a sub-pixel that emits yellow light, and so on.

[0396] Wiring GL is electrically connected to sub-pixels 505R, 505G, and 505B, which are arranged in the row direction (the direction in which wiring GL extends). Wiring SLR, SLG, and SLB are electrically connected to sub-pixels 505R, 505G, or 505B (not shown), which are arranged in the column direction (the direction in which wiring SLR, etc. extends), respectively.

[0397] [Example of pixel circuit configuration] Figure 21B shows an example of a circuit diagram for a pixel 505 that can be applied to the sub-pixels 505R, 505G, and 505B described above. Pixel 505 has transistors M1, M2, M3, capacitor C1, and light-emitting device EL. Wiring GL and wiring SL are electrically connected to pixel 505. Wiring SL corresponds to one of the wirings SLR, SLG, and SLB shown in Figure 21A.

[0398] Transistor M1 has its gate electrically connected to wiring GL, one of its source and drain electrically connected to wiring SL, and the other of its source and drain electrically connected to one electrode of capacitor C1 and the gate of transistor M2. Transistor M2 has one of its source and drain electrically connected to wiring AL, and the other of its source and drain electrically connected to one electrode of light-emitting device EL, the other electrode of capacitor C1, and one of its source and drain. Transistor M3 has its gate electrically connected to wiring GL, and the other of its source and drain electrically connected to wiring RL. Light-emitting device EL has its other electrode electrically connected to wiring CL.

[0399] A data potential D is applied to wiring SL. A selection signal is applied to wiring GL. This selection signal includes a potential that makes the transistor conduct and a potential that makes it non-conductive.

[0400] A reset potential is applied to wiring RL. An anode potential is applied to wiring AL. A cathode potential is applied to wiring CL. In pixel 505, the anode potential is set to a higher potential than the cathode potential. The reset potential applied to wiring RL can be set to such a potential that the potential difference between the reset potential and the cathode potential is smaller than the threshold voltage of the light-emitting device EL. The reset potential can be set to a potential higher than the cathode potential, the same potential as the cathode potential, or a potential lower than the cathode potential.

[0401] Transistors M1 and M3 function as switches. Transistor M2 functions as a transistor for controlling the current flowing to the light-emitting device EL. For example, it can be said that transistor M1 functions as a selector transistor and transistor M2 functions as a drive transistor.

[0402] Here, it is preferable to apply LTPS transistors to all of transistors M1 through M3. Alternatively, it is preferable to apply OS transistors to transistors M1 and M3 and an LTPS transistor to transistor M2.

[0403] Alternatively, OS transistors may be applied to all of transistors M1 through M3. In this case, one or more of the transistors in the drive circuit unit 502 and the drive circuit unit 503 may be LTPS transistors, and the other transistors may be OS transistors. For example, OS transistors may be applied to the transistors provided in the display unit 504, and LTPS transistors may be applied to the transistors provided in the drive circuit unit 502 and the drive circuit unit 503.

[0404] As an OS transistor, a transistor using an oxide semiconductor in the semiconductor layer where the channel is formed can be used. The semiconductor layer preferably contains, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin. In particular, it is preferable to use an oxide containing indium, gallium, and zinc (also written as IGZO) as the semiconductor layer of the OS transistor. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc.

[0405] Transistors using oxide semiconductors, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge stored in a capacitor connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors for transistors M1 and M3, which are connected in series with capacitor C1. By using transistors with oxide semiconductors as transistors M1 and M3, it is possible to prevent the charge held in capacitor C1 from leaking through transistor M1 or M3. Furthermore, because the charge held in capacitor C1 can be retained for extended periods, it becomes possible to display still images for extended periods without rewriting the data in pixel 505.

[0406] Note that in Figure 21B, the transistor is shown as an n-channel type transistor, but a p-channel type transistor can also be used.

[0407] Furthermore, it is preferable that each transistor in pixel 505 be formed in a row on the same substrate.

[0408] As the transistor in pixel 505, a transistor having a pair of gates that overlap across a semiconductor layer can be applied.

[0409] In a transistor having a pair of gates, configuring the pair of gates to be electrically connected to each other and given the same potential offers advantages such as increased on-current and improved saturation characteristics. Alternatively, one of the pair of gates may be given a potential that controls the transistor's threshold voltage. Furthermore, providing a constant potential to one of the pair of gates can improve the stability of the transistor's electrical characteristics. For example, one of the transistor's gates may be electrically connected to a wiring to which a constant potential is provided, or it may be electrically connected to its own source or drain.

[0410] The pixel 505 shown in Figure 21C is an example where transistors M1 and M3 each have a pair of gates. The pair of gates of transistors M1 and M3 are electrically connected. This configuration shortens the data writing time to the pixel 505.

[0411] The pixel 505 shown in Figure 21D is an example in which a transistor with a pair of gates is applied to transistor M2, in addition to transistors M1 and M3. In transistor M2, the pair of gates are electrically connected. By applying such a transistor to transistor M2, the saturation characteristics are improved, making it easier to control the luminescence brightness of the light-emitting device EL and improving the display quality.

[0412] [Example of transistor configuration] The following describes examples of transistor cross-sectional configurations that can be applied to the above-mentioned display panel.

[0413] [Configuration Example 1] Figure 22A is a cross-sectional view including transistor 510.

[0414] Transistor 510 is provided on substrate 501 and is a transistor in which polycrystalline silicon is applied to the semiconductor layer. For example, transistor 510 corresponds to transistor M2 of pixel 505. That is, Figure 22A is an example in which one of the source and drain of transistor 510 is electrically connected to the conductive layer 531 of the light-emitting device.

[0415] The transistor 510 includes a semiconductor layer 511, an insulating layer 512, a conductive layer 513, etc. The semiconductor layer 511 has a channel-forming region 511i and a low-resistance region 511n. The semiconductor layer 511 is made of silicon. Preferably, the semiconductor layer 511 is made of polycrystalline silicon. A portion of the insulating layer 512 functions as a gate insulating layer. A portion of the conductive layer 513 functions as a gate electrode.

[0416] Furthermore, the semiconductor layer 511 may also be configured to include a metal oxide (also called an oxide semiconductor) that exhibits semiconductor properties. In this case, the transistor 510 can be called an OS transistor.

[0417] The low-resistance region 511n is a region containing impurity elements. For example, if transistor 510 is an n-channel type transistor, phosphorus, arsenic, etc., can be added to the low-resistance region 511n. On the other hand, if it is a p-channel type transistor, boron, aluminum, etc., can be added to the low-resistance region 511n. Furthermore, in order to control the threshold voltage of transistor 510, the aforementioned impurities may also be added to the channel formation region 511i.

[0418] An insulating layer 521 is provided on the substrate 501. The semiconductor layer 511 is provided on the insulating layer 521. The insulating layer 512 is provided covering the semiconductor layer 511 and the insulating layer 521. The conductive layer 513 is provided on the insulating layer 512 in a position overlapping with the semiconductor layer 511.

[0419] Furthermore, an insulating layer 522 is provided covering the conductive layer 513 and the insulating layer 512. Conductive layers 514a and 514b are provided on the insulating layer 522. Conductive layers 514a and 514b are electrically connected to the low-resistance region 511n at openings provided in the insulating layers 522 and 512. A portion of the conductive layer 514a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 514b functions as the other of the source electrode and drain electrode. In addition, an insulating layer 523 is provided covering the conductive layer 514a, conductive layer 514b, and insulating layer 522.

[0420] A conductive layer 531, which functions as a pixel electrode, is provided on the insulating layer 523. The conductive layer 531 is provided on the insulating layer 523 and is electrically connected to the conductive layer 514b at an opening provided in the insulating layer 523. Although omitted here, an EL layer and a common electrode can be laminated on the conductive layer 531.

[0421] [Configuration Example 2] Figure 22B shows a transistor 510a having a pair of gate electrodes. The transistor 510a shown in Figure 22B differs from that in Figure 22A mainly in that it has a conductive layer 515 and an insulating layer 516.

[0422] The conductive layer 515 is provided on the insulating layer 521. Furthermore, an insulating layer 516 is provided covering the conductive layer 515 and the insulating layer 521. The semiconductor layer 511 is provided such that at least the channel-forming region 511i overlaps with the conductive layer 515 via the insulating layer 516.

[0423] In the transistor 510a shown in Figure 22B, a portion of the conductive layer 513 functions as a first gate electrode, and a portion of the conductive layer 515 functions as a second gate electrode. At the same time, a portion of the insulating layer 512 functions as a first gate insulating layer, and a portion of the insulating layer 516 functions as a second gate insulating layer.

[0424] Here, when electrically connecting the first gate electrode and the second gate electrode, the conductive layer 513 and the conductive layer 515 may be electrically connected through openings provided in the insulating layer 512 and the insulating layer 516 in a region not shown. Also, when electrically connecting the second gate electrode to the source or drain, the conductive layer 514a or conductive layer 514b and the conductive layer 515 may be electrically connected through openings provided in the insulating layer 522, the insulating layer 512, and the insulating layer 516 in a region not shown.

[0425] When LTPS transistors are applied to all transistors constituting pixel 505, transistor 510 as exemplified in Figure 22A, or transistor 510a as exemplified in Figure 22B, can be applied. In this case, transistor 510a may be used for all transistors constituting pixel 505, transistor 510 may be applied to all transistors, or transistor 510a and transistor 510 may be used in combination.

[0426] [Configuration Example 3] The following describes an example of a configuration that includes both transistors with silicon semiconductor layers and transistors with metal oxide semiconductor layers.

[0427] Figure 22C shows a schematic cross-sectional view including transistors 510a and 550.

[0428] For transistor 510a, refer to Configuration Example 1 above. Although an example using transistor 510a is shown here, a configuration with transistor 510 and transistor 550 is also possible, or a configuration with all three transistors, transistor 510, transistor 510a, and transistor 550, is also possible.

[0429] Transistor 550 is a transistor in which a metal oxide is applied to the semiconductor layer. The configuration shown in Figure 22C is an example in which, for example, transistor 550 corresponds to transistor M1 of pixel 505 and transistor 510a corresponds to transistor M2. That is, Figure 22C is an example in which one of the source and drain of transistor 510a is electrically connected to the conductive layer 531.

[0430] Figure 22C also shows an example where transistor 550 has a pair of gates.

[0431] The transistor 550 has a conductive layer 555, an insulating layer 522, a semiconductor layer 551, an insulating layer 552, a conductive layer 553, etc. A portion of the conductive layer 553 functions as the first gate of the transistor 550, and a portion of the conductive layer 555 functions as the second gate of the transistor 550. At this time, a portion of the insulating layer 552 functions as the first gate insulating layer of the transistor 550, and a portion of the insulating layer 522 functions as the second gate insulating layer of the transistor 550.

[0432] The conductive layer 555 is provided on the insulating layer 512. The insulating layer 522 is provided covering the conductive layer 555. The semiconductor layer 551 is provided on the insulating layer 522. The insulating layer 552 is provided covering the semiconductor layer 551 and the insulating layer 522. The conductive layer 553 is provided on the insulating layer 552 and has a region that overlaps with the semiconductor layer 551 and the conductive layer 555.

[0433] Furthermore, an insulating layer 526 is provided covering the insulating layer 552 and the conductive layer 553. Conductive layers 554a and 554b are provided on the insulating layer 526. Conductive layers 554a and 554b are electrically connected to the semiconductor layer 551 at openings provided in the insulating layer 526 and insulating layer 552. A portion of the conductive layer 554a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 554b functions as the other of the source electrode and drain electrode. In addition, an insulating layer 523 is provided covering the conductive layer 554a, conductive layer 554b, and insulating layer 526.

[0434] Here, it is preferable that the conductive layers 514a and 514b, which are electrically connected to the transistor 510a, are formed by processing the same conductive film as conductive layers 554a and 554b. Figure 22C shows a configuration in which conductive layers 514a, 514b, 554a, and 554b are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 526) and contain the same metal element. In this case, conductive layers 514a and 514b are electrically connected to the low-resistance region 511n through openings provided in the insulating layer 526, insulating layer 552, insulating layer 522, and insulating layer 512. This is preferable because it simplifies the manufacturing process.

[0435] Furthermore, it is preferable that the conductive layer 513, which functions as the first gate electrode of transistor 510a, and the conductive layer 555, which functions as the second gate electrode of transistor 550, are formed by processing the same conductive film. Figure 22C shows a configuration in which the conductive layer 513 and the conductive layer 555 are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 512) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0436] In Figure 22C, the insulating layer 552, which functions as the first gate insulating layer of the transistor 550, is configured to cover the edge of the semiconductor layer 551. However, as shown in the transistor 550a in Figure 22D, the insulating layer 552 may be processed so that its upper surface shape matches or roughly matches that of the conductive layer 553.

[0437] In this specification, "approximately matching top surface shapes" means that at least a portion of the contours overlap between stacked layers. For example, this includes cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case, too, it is said that the "top surface shapes are approximately matching."

[0438] In this example, transistor 510a corresponds to transistor M2 and is electrically connected to the pixel electrode, but this is not the only example. For example, transistor 550 or transistor 550a may correspond to transistor M2. In this case, transistor 510a corresponds to transistor M1, transistor M3, or another transistor.

[0439] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0440] (Embodiment 8) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 23 and 24.

[0441] The image processing system of this embodiment can be applied to various electronic devices that have the function of displaying images. Therefore, it can significantly reduce the power consumption of electronic devices equipped with a display unit.

[0442] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0443] In particular, a display panel according to one embodiment of the present invention can be used in electronic devices having a relatively small display area because it can increase resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices).

[0444] A display panel according to one embodiment of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display panel according to one embodiment of the present invention is preferably 50 ppi or more, more preferably 100 ppi or more, more preferably 300 ppi or more, more preferably 5000 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display panel having high resolution and / or high detail, it is possible to further enhance the sense of presence and depth. Furthermore, there are no particular limitations on the aspect ratio of the display panel in one embodiment of the present invention. For example, the display panel can support various aspect ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0445] The electronic device of this embodiment may have sensors (including those with the function of detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0446] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0447] The electronic device 6500 shown in Figure 23A is a portable information terminal that can be used as a smartphone.

[0448] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0449] A display panel according to one embodiment of the present invention can be applied to the display unit 6502.

[0450] Figure 23B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0451] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0452] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0453] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0454] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0455] Figure 23C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0456] The television device 7100 shown in Figure 23C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0457] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0458] Figure 23D shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0459] Figures 23E and 23F show examples of digital signage.

[0460] The digital signage 7300 shown in Figure 23E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0461] Figure 23F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0462] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0463] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0464] Furthermore, as shown in Figures 23E and 23F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0465] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0466] In Figures 23C to 23F, a display panel according to one embodiment of the present invention can be applied to the display unit 7000.

[0467] The electronic equipment shown in Figures 24A to 24G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for detecting, detecting, or measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0468] The electronic devices shown in Figures 24A to 24G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0469] Details of the electronic equipment shown in Figures 24A to 24G will be explained below.

[0470] Figure 24A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 24A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0471] Figure 24B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0472] Figure 24C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0473] Figure 24D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0474] Figures 24E to 24G are perspective views showing a foldable personal information terminal 9201. Figure 24E shows the personal information terminal 9201 in an unfolded state, Figure 24G shows it in a folded state, and Figure 24F shows a perspective view of the state in between, transitioning from one of Figures 24E or 24G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0475] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of Symbols]

[0476] 10A: Electronic equipment, 10: Electronic equipment, 11: Display unit, 12: Calculation unit, 13: Image processing unit, 14: Communication unit, 15: Sensor unit, 16: Imaging unit, 17: Audio control unit, 20: Housing, 21: Display device, 22: Input device, 23: Drive unit, 24: Drive unit, 25: Area, 31: Illuminance sensor, 32: Camera, 33: Speaker, 34: Microphone, 35: Camera, 36: Acceleration sensor, 40: User, 41: Image, 42: Image, 50: Contact position, 51: Area, 52: Area, 53: Area, 55: Area, 61: Main unit, 62: Keyboard, 63: Mouse, 70: Display unit, 71: Cursor, 72: Window, 73: Window, 74: Background, 80: Server, 81: Calculation unit, 82: Image processing unit, 83: Communication unit

Claims

1. It has a display unit, an input unit, a calculation unit, and an image processing unit. The aforementioned input unit has a function to acquire location information of user-instructed operations. The calculation unit has the function of determining a first region and a second region based on the position information. The image processing unit has the function of generating a second image by performing image processing on the portion of the first image corresponding to the first region, The display unit has the function of displaying the second image, The area in which the user performs a swipe operation is referred to as the first area, and the other areas are referred to as the second area. The first region is subjected to image processing that reduces either the resolution or the frame frequency, or both. Without applying the image processing to the second region, The area where the user performs a tap operation is defined as the first area, and the area on the display unit furthest from the first area is defined as the second area. The first region is displayed at the highest resolution and frame rate, The second region is displayed at the lowest resolution and frame rate. The region between the first region and the second region is displayed with a resolution and frame frequency equal to or less than that of the first region, but greater than or equal to that of the second region. Image processing system.

2. It has a display unit, an input unit, a calculation unit, and an image processing unit. The aforementioned input unit has a function to acquire location information of user-instructed operations. The calculation unit has the function of determining a first region and a second region based on the position information. The image processing unit has the function of generating a second image by performing image processing on the portion of the first image corresponding to the first region, The display unit has the function of displaying the second image, The area in which the user performs a swipe operation is referred to as the first area, and the other areas are referred to as the second area. The first region is subjected to image processing that reduces either the resolution or the frame frequency, or both. Without applying the image processing to the second region, The area where the user performs a tap operation is defined as the first area, and the area on the display unit furthest from the first area is defined as the second area. The first region is displayed at the highest resolution and frame rate. The second region is displayed at the lowest resolution and frame rate. The region between the first region and the second region is displayed with a resolution and frame frequency that is less than or equal to that of the first region but greater than or equal to that of the second region. The area covered by the user's fingers and hands is driven to turn off. Image processing system.

Images