Indication device

Abstract

To provide a display device in a new configuration.SOLUTION: A display device includes: a first board in which multiple pixels having a display element are provided; and a second board having a first conductive layer in which first multiple openings are provided. The first conductive layer has an antenna function capable of transmitting and receiving a radio signal. The pixels and the first openings have a mutually overlapped area. The second board has an element layer. The element layer has transistors. The transistors have a function of an amplifier capable of amplifying a radio signal. The transistors have semiconductor layers having a metal oxide in channel formation regions each. The metal oxide contains In, Ga, and Zn.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This specification describes display devices and the like.

[0002] Furthermore, in this specification, "display device" refers to any device that has a display function. [Background technology]

[0003] The development of information technologies such as the Internet of Things (IoT) has led to an increase in the amount of data transmitted and received. To cope with this increase in data volume, a new communication standard called the fifth-generation mobile communication system (5G) is being considered, which will achieve faster communication speeds, more simultaneous connections, and shorter latency than the fourth-generation mobile communication system (4G) (see, for example, Patent Document 1). In Japan, 5G will use communication frequencies in the 3.7GHz, 4.5GHz, and 28GHz bands.

[0004] As communication frequencies increase, the amount of information that can be transmitted and received increases, but the communication range decreases. To counteract this reduction in communication range, beamforming technology using antennas arranged in an array is effective. For example, in Japan, a configuration in which antennas are spaced approximately 5 mm apart, corresponding to half a wavelength of the communication frequency, is effective. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2017 / 026590 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Display devices such as smartphones that perform mobile communications require miniaturization of integrated circuits (ICs), including antennas. In electronic devices that perform mobile communications compliant with 5G communication standards, arranging multiple antennas presents a trade-off with the requirement for miniaturized integrated circuits. Achieving both an evenly spaced antenna configuration and a miniaturized integrated circuit configuration has been challenging.

[0007] One aspect of the present invention aims to provide a novel display device or the like. Alternatively, one aspect of the present invention aims to provide a novel display device or the like that can achieve both a configuration in which antennas are arranged in a row and a configuration that miniaturizes integrated circuits.

[0008] The description of multiple problems does not preclude the existence of each other. One embodiment of the present invention does not need to solve all of the exemplified problems. Furthermore, problems other than those listed may become apparent from the description herein, and such problems may also be problems addressed by one embodiment of the present invention. [Means for solving the problem]

[0009] One aspect of the present invention is a display device comprising a first substrate provided with a plurality of pixels having display elements, and a second substrate having a first conductive layer provided with a plurality of first apertures, wherein the first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and the pixels and the first apertures have overlapping regions.

[0010] One aspect of the present invention is a display device comprising a first substrate provided with a plurality of pixels having display elements, a second substrate provided with a first conductive layer provided with a plurality of first apertures, and an element layer having transistors, wherein the first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, the transistors have the function of an amplifier capable of amplifying wireless signals, and the pixels and the first apertures have overlapping regions.

[0011] One aspect of the present invention is a display device comprising: a first substrate provided with a plurality of pixels having display elements; a second substrate provided with a plurality of first conductive layers having a plurality of first apertures; a second conductive layer provided with a plurality of second apertures; and an element layer having transistors, wherein the first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and the transistors have the function of an amplifier capable of amplifying wireless signals, and the pixels, the first apertures, and the second apertures have overlapping regions.

[0012] In one embodiment of the present invention, the second conductive layer is preferably a display device that functions as an electrode for a touch sensor.

[0013] In one embodiment of the present invention, a display device is preferred in which the transistor has a semiconductor layer having a metal oxide in the channel formation region.

[0014] In one embodiment of the present invention, a display device is preferred in which the metal oxide includes In, Ga, and Zn.

[0015] In one embodiment of the present invention, a display device is preferred in which the transistor has a region that overlaps with the first conductive layer.

[0016] In one embodiment of the present invention, a display device is preferred in which the first conductive layer has a third conductive layer that functions as an antenna capable of transmitting and receiving a first wireless signal, and a fourth conductive layer that functions as an antenna capable of transmitting and receiving a second wireless signal, and the shape of the third conductive layer is different from the shape of the fourth conductive layer.

[0017] In one embodiment of the present invention, the second substrate is preferably a glass substrate for the display device.

[0018] In one embodiment of the present invention, the second substrate is preferably a flexible substrate, which is preferred for a display device.

[0019] Further embodiments of the present invention are described in the following descriptions of embodiments and in the drawings. [Effects of the Invention]

[0020] One aspect of the present invention can provide a novel display device, etc. Alternatively, one aspect of the present invention can provide a novel display device, etc. that can achieve both a configuration in which antennas are arranged in a row and a configuration that enables miniaturization of integrated circuits.

[0021] The description of multiple effects does not preclude the existence of other effects. Furthermore, one embodiment of the present invention does not necessarily have to possess all of the exemplified effects. In addition, any problems, effects, and novel features of one embodiment of the present invention other than those described above will become clear from the description and drawings of this specification. [Brief explanation of the drawing]

[0022] [Figure 1] Figures 1A and 1B illustrate an example of the configuration of a display device. [Figure 2] Figures 2A and 2B illustrate examples of display device configurations. [Figure 3] Figures 3A and 3B illustrate an example of a display device configuration. [Figure 4] Figures 4A and 4B illustrate examples of the configuration of a display device. [Figure 5] Figures 5A to 5F illustrate examples of the configuration of a display device. [Figure 6] Figures 6A and 6B illustrate examples of the configuration of a display device. [Figure 7] Figures 7A and 7B illustrate an example of a display device configuration. [Figure 8] Figures 8A to 8G illustrate examples of the configuration of a display device. [Figure 9] Figure 9 illustrates an example of a display device configuration. [Figure 10] Figures 10A to 10E illustrate examples of the configuration of a display device. [Figure 11] Figures 11A and 11B show examples of the configuration of an electronic device. [Figure 12] Figure 12 shows an example of an integrated circuit configuration. [Figure 13] Figure 13 illustrates an example of a display device configuration. [Figure 14] Figures 14A and 14B illustrate an example of a display device configuration. [Figure 15] Figures 15A and 15B illustrate an example of a display device configuration. [Figure 16] Figures 16A and 16B illustrate an example of the configuration of a display device. [Figure 17] Figures 17A and 17B illustrate an example of the configuration of a display device. [Figure 18] Figure 18 illustrates an example of a display device configuration. [Figure 19] Figures 19A to 19C illustrate examples of the configuration of a display device. [Figure 20] Figure 20 illustrates an example of a display device configuration. [Figure 21] Figures 21A to 21F illustrate examples of the configuration of an electronic device. [Modes for carrying out the invention]

[0023] Embodiments of the present invention are described below. However, it will be readily apparent to those skilled in the art that an embodiment of the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, an embodiment of the present invention is not to be interpreted as being limited to the contents of the embodiments shown below.

[0024] In this specification, the ordinal numbers "1st," "2nd," and "3rd" are used to avoid confusion of constituent elements. Therefore, they do not limit the number of constituent elements, nor do they limit the order of the constituent elements. For example, a constituent element referred to as "1st" in one embodiment of this specification may be referred to as "2nd" in another embodiment or in the claims. For example, a constituent element referred to as "1st" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0025] In drawings, identical elements, elements with similar functions, elements of the same material, or elements formed simultaneously may be denoted by the same reference numeral, and repeated explanations may be omitted.

[0026] In this specification, for example, the power supply potential VDD may be abbreviated as potential VDD, VDD, etc. This also applies to other components (e.g., signals, voltages, circuits, elements, electrodes, wiring, etc.).

[0027] Furthermore, when the same designation is used for multiple elements, especially when it is necessary to distinguish them, identification designations such as "_1", "_2", "[n]", and "[m,n]" may be added to the designation. For example, the second wiring GL is written as wiring GL[2].

[0028] (Embodiment 1) An example of the configuration of a display device according to one aspect of the present invention will be described with reference to Figures 1A to 10E.

[0029] In this specification, a display device in which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached to the substrate constituting the display device, or in which an IC (Integrated Circuit) is directly mounted to the substrate constituting the display device using the COG (Chip On Glass) method, may be referred to as a display device or display module.

[0030] Figure 1A is a schematic diagram illustrating the appearance of a display device 100 according to one embodiment of the present invention. The display device according to one embodiment of the present invention has a configuration comprising a display element and a conductive layer constituting an antenna between a pair of substrates. The display device according to one embodiment of the present invention can realize the arrangement of multiple antennas superimposed on the display unit.

[0031] The display device 100 includes a substrate 110 on which display elements are provided, and a substrate 120 on which a conductive layer is provided. The substrate 110 has an FPC 112 into which signals for display are input. The substrate 120 has an FPC 122 for transmitting and receiving signals.

[0032] The substrate 120 has a conductive layer processed into a desired shape. The conductive layer functions as an antenna 130. Preferably, each conductive layer has an opening. The openings and the display elements are arranged to overlap each other. In this way, light from the display elements is emitted to the outside through the openings, so the conductive layer functioning as an antenna does not need to be light-transmitting. In other words, it becomes possible to use a material such as a metal or alloy with lower resistance than a light-transmitting conductive material as the material for the conductive layer functioning as an antenna. Therefore, it is possible to transmit and receive wireless signals as an antenna with reduced influence from wiring resistance and the like.

[0033] Furthermore, because low-resistance materials can be used for the conductive layer, its line width can be made extremely small. In other words, the surface area of ​​the conductive layer when viewed from the display side (plan view) can be reduced. As a result, the effects of noise generated when driving pixels can be suppressed. Moreover, the effects of noise can also be suppressed by arranging the conductive layer, which functions as an antenna, and the display elements that constitute the pixels in close proximity between two substrates. Therefore, the thickness of the display device can be reduced. In particular, by using flexible materials for the pair of substrates, a thin, lightweight, and flexible display device can be realized.

[0034] Furthermore, the conductive layer provided on the substrate 120 has a mesh-like shape with multiple openings. The material for the conductive layer used in the antenna 130 is preferably one with low resistance. For example, metals such as silver, copper, and aluminum may be used. Additionally, metal nanowires composed of numerous extremely thin conductors (e.g., with a diameter of several nanometers) may be used. For example, Ag nanowires, Cu nanowires, and Al nanowires may be used. In the case of Ag nanowires, for example, a light transmittance of 89% or more and a sheet resistance of 40Ω / □ to 100Ω / □ can be achieved. Since such metal nanowires have high transmittance, they may be used as electrodes in display elements, such as pixel electrodes or common electrodes. Alternatively, carbon nanotubes may be used as the material for the conductive layer used in the antenna 130.

[0035] Figure 1B is a schematic diagram illustrating the configuration of the substrate 110 side in a display device 100 according to one embodiment of the present invention. The substrate 110 has a display unit 111. The display unit 111 has a plurality of pixels 116 arranged in a matrix. Preferably, the pixels 116 have a plurality of sub-pixels. Each sub-pixel has a display element. The substrate 110 also has a circuit 115 that is electrically connected to the pixels 116 in the display unit 111. The circuit 115 can be a circuit that functions as a gate drive circuit, for example. The FPC 112 has the function of supplying an external signal to at least one of the display unit 111 or the circuit 115 via wiring 114. It is preferable to mount an IC 113 that functions as a source drive circuit on the substrate 110 or the FPC 112. The IC 113 can be mounted on the substrate 110 using the COG method or the COF (Chip On Film) method.

[0036] Display elements that can be used in display devices include liquid crystal elements, organic EL elements, inorganic EL elements, LED elements, microcapsules, electrophoretic elements, electrowetting elements, electrofluidic elements, electrochromic elements, and MEMS elements.

[0037] Alternatively, a touch panel with touch sensor functionality can be used as the display device. In this case, IC113 should be configured to include a touch sensor controller, sensor driver, etc. Preferably, the touch panel is an on-cell type or in-cell type touch panel, where the display device and touch sensor are integrated. On-cell or in-cell touch panels can be thin and lightweight. Furthermore, on-cell or in-cell touch panels can reduce the number of components, thus reducing costs. The touch panel can also employ optical or capacitive touch sensors.

[0038] Figure 2A is a schematic diagram illustrating the configuration of the substrate 120 side in a display device 100 according to one embodiment of the present invention. The substrate 120 has a conductive layer processed into a desired shape. The processed conductive layer functions as an antenna. As shown in Figure 2A, a plurality of antennas 130_1 to 130_N can be provided on the substrate. The FPC 122 functions as wiring that provides electrical connections between the plurality of antennas 130_1 to 130_N and the integrated circuit 141 provided on the substrate 140.

[0039] In one embodiment of the present invention, antennas 130_1 to 130_N can be arranged on a substrate 120. Multiple antennas 130_1 to 130_N can be arranged in a row over an area equivalent to that of the display unit 111 having pixels 116. Multiple antennas 130_1 to 130_N can be arranged in a row over the entire surface of the substrate 120, which is wider than the area of ​​the substrate 140. Because multiple antennas 130_1 to 130_N can be arranged in a row, antennas of different shapes or sizes can be arranged in a row. Furthermore, since the antennas can be provided in the area that is the display unit, a display device can be made that is capable of both arranging multiple antennas in a row and miniaturizing the integrated circuit.

[0040] Because antennas of different shapes or sizes can be arranged, a configuration can be created to transmit and receive wireless signals of different frequencies. Furthermore, because multiple antennas of the same shape and size can be arranged, beamforming technology using an array of antennas can be applied. Beamforming technology allows for antenna directivity, compensating for radio wave propagation loss at higher communication frequencies.

[0041] An effective arrangement for antennas 130_1 to 130_N is, for example, to arrange them at intervals of approximately 5 mm, which is half a wavelength of the communication frequency. It is preferable to place a conductive layer that does not function as an antenna between antennas 130_1 to 130_N. By placing a conductive layer that does not function as an antenna between adjacent antennas, the coverage of the thin film formed after the conductive layer formation process can be improved, and the surface can be flattened. Furthermore, by making the thickness of the layer including the conductive layer uniform, brightness unevenness from the pixels transmitting light is reduced, resulting in a display device with improved display quality. The conductive layer that does not function as an antenna may also be used as an electrode for a touch sensor. Since the frequency of the signal used in the touch sensor is different from the frequency of the signal used in wireless communication, the signals can be separated.

[0042] Figure 2B shows the multiple antennas 130_1 to 130_N shown in Figure 2A, as well as the integrated circuit 141 and the baseband processor 12.

[0043] The integrated circuit 141 has the function of performing modulation or demodulation processing on the data of the radio signals transmitted and received by antennas 130_1 to 130_N. Specifically, the integrated circuit 141 has the function of generating a transmission signal by modulating the transmission data received from the baseband processor 12 with a carrier wave and outputting the transmission signal via antennas 130_1 to 130_N. The integrated circuit 141 also has the function of receiving a received signal via antennas 130_1 to 130_N, demodulating the received signal with a carrier wave to generate received data, and transmitting the received data to the baseband processor 12. The integrated circuit 141 may also be equipped with a duplexer connected to each of the antennas 130_1 to 130_N.

[0044] The baseband processor 12 has the function of performing baseband processing, including encoding (e.g., error correction encoding) or decoding, on data transmitted to and from external devices via antennas 130_1 to 130_N. Specifically, the baseband processor 12 has the function of receiving transmission data from the application processor, encoding the received transmission data, and transmitting it to the integrated circuit 141. The baseband processor 12 also has the function of receiving received data from the integrated circuit 141, decoding the received data, and transmitting it to the application processor.

[0045] Figure 3A shows a layout diagram of conductive layers 131A to 131D applicable to antennas 130_1 to 130_N described in Figure 2A, and a conductive layer 132 provided between the antennas. Conductive layers 131A to 131D show an aperture 133A for transmitting light from the pixels. Conductive layer 132 shows an aperture 133B for transmitting light from the pixels.

[0046] The conductive layers 131A to 131D, which function as antennas, are provided spaced apart from the conductive layer 132, which does not function as an antenna. The apertures 133A and 133B are provided in areas that overlap with the pixels of the display unit. With this configuration, light from the display element is emitted to the outside through the apertures 133A and 133B, so the conductive layers 131A to 131D do not need to be light-transmitting. In other words, materials such as metals or alloys with lower resistance than light-transmitting conductive materials can be used as the material for the conductive layer that functions as an antenna.

[0047] Figure 3B is a schematic diagram showing the layout diagram described in Figure 3A, represented by block diagrams for each region. In Figure 3B, as in Figure 3A, conductive layers 131A to 131D and conductive layer 132 are illustrated.

[0048] As shown in Figures 3A and 3B, by regularly arranging conductive layers that function as antennas with conductive layers that do not function as antennas in between, it is possible to arrange antennas at intervals of, for example, half a wavelength of the communication frequency, or approximately 5 mm. Therefore, beamforming technology using array-shaped antennas can be applied. Because beamforming technology can give antenna directivity, it is possible to compensate for radio wave propagation loss when the communication frequency is high.

[0049] Furthermore, as shown in Figures 3A and 3B, by regularly arranging conductive layers that function as antennas with conductive layers that do not function as antennas in between, the coverage of the thin film formed after the conductive layer formation process can be improved, and the surface can be flattened. In addition, by making the thickness of the layers including the conductive layers uniform, the brightness unevenness of light transmitted from pixels is reduced, and a display device with improved display quality can be realized. Note that Figures 3A and 3B illustrate a configuration in which conductive layers 131A to 131D are regularly arranged in a rectangular shape, but are not limited to this. For example, the shapes of conductive layers 131A to 131D may be circular, triangular, pentagonal, hexagonal, octagonal, etc.

[0050] Figure 4A shows schematic diagrams of different sizes of conductive layers that function as antennas, similar to the block diagram shown in Figure 3B. Figure 4B shows a schematic diagram that includes conductive layers that do not function as antennas, in addition to the conductive layers that function as antennas as shown in Figure 4A.

[0051] Figure 4A shows conductive layers 131P, 131Q, and 131R of different sizes on the substrate 120, which function as antennas. Figure 4B shows the configuration shown in Figure 4A, plus a conductive layer 132.

[0052] As shown in Figure 4B, by regularly arranging conductive layers that function as antennas with non-antenna conductive layers in between, beamforming technology using array-shaped antennas can be applied. Furthermore, as shown in Figure 4B, regularly arranging conductive layers that function as antennas with non-antenna conductive layers in between can suppress the formation of thin areas in the conductive layer. Therefore, the coverage of the thin film formed after the conductive layer formation process can be improved, and the surface can be flattened.

[0053] Figures 5A to 5F illustrate examples of the configuration of the conductive layer 131 applicable to the conductive layers 131A to 131D that function as antennas, as shown in Figure 3A.

[0054] In Figure 3A, the conductive layer functioning as an antenna is shown as having a rectangular opening in a rectangular conductive layer when viewed from above, but it is not limited to this configuration. For example, as shown in Figure 5A, the conductive layer 131 can have an opening 133 and a notch 134.

[0055] Another possible configuration is, for example, as shown in Figure 5B, in which the conductive layer 131 has openings 133A and 133B of different sizes.

[0056] Another possible configuration is shown in Figure 5C, where the conductive layer 131 has openings 133A and 133B of different sizes, as well as a notch 134.

[0057] Another possible configuration is shown in Figure 5D, where the conductive layer 131 has a projection 135 in addition to the opening 133.

[0058] Another possible configuration is, for example, as shown in Figure 5E, in which the conductive layer 131 has multiple openings 133A and 133B of different sizes.

[0059] Another configuration, for example, as shown in Figure 5F, is one in which the conductive layer 131 has rounded openings 133C at its corners. Also, as shown in Figure 5F, the corners of the conductive layer 131 may be rounded.

[0060] Figure 6A describes the element layer superimposed on the conductive layer 131 having an aperture 133, which functions as an antenna, with reference to the drawing. As shown in Figure 6A, an element layer 161 having a transistor is superimposed on the conductive layer 131. The aperture 133 is superimposed on the aperture 162 and pixel 116 of the element layer 161. The light emitted by the pixel 116 (shown by the dashed arrow in Figure 6A) passes through the aperture 162 and aperture 133.

[0061] Figure 6B is a schematic diagram illustrating the overlap between the transistor and the conductive layer 131 when viewing the region 160 where the conductive layer 131 and the element layer 161 shown in Figure 6A overlap, from a plan view. Figure 6B shows multiple transistors 164 connected to the wiring 163 of the element layer 161. By providing the element layer 161 with transistors 164 in the region overlapping with the conductive layer 131, as shown in Figure 6B, a part of the circuit of the integrated circuit 141 described in Figures 2A and 2B can be provided on the element layer 161.

[0062] Specifically, the configuration of the integrated circuit 141 that can be provided on the element layer 161 can include a duplexer, amplifier, or mixer, which can be made up of transistors 164 on the element layer 161. Compared to a configuration in which only the antenna is provided on the substrate 120 side, the amplified signal is input and output to the substrate 140 having the integrated circuit 141 via the FPC 122, so stable operation can be achieved.

[0063] The transistors in the element layer 161 are preferably configured to use transistors having an oxide semiconductor (metal oxide) in the channel formation region (hereinafter referred to as OS transistors). Since OS transistors can be freely arranged on an element layer having a transistor having a silicon channel formation region (hereinafter referred to as a Si transistor), or on an element layer having an OS transistor, integration can be easily performed. Furthermore, since OS transistors can be manufactured using the same manufacturing equipment as Si transistors, they can be manufactured at low cost.

[0064] As the metal oxide, metal oxides such as In-M-Zn oxide (where element M is one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) are preferred. For example, metal oxides containing indium, zinc, and gallium (In-Ga-Zn oxide), metal oxides containing indium, zinc, and tin (In-Sn-Zn oxide), or metal oxides containing indium, zinc, gallium, and tin (In-Ga-Zn-Sn oxide) can be suitably used.

[0065] The formation of metal oxides that function as oxide semiconductors may be carried out by sputtering or by ALD (Atomic Layer Deposition).

[0066] Figure 7A corresponds to a configuration that shows the amplifier 142 in addition to the block diagram shown in Figure 2B. By providing the amplifier 142 on the substrate 120 side using transistors 164 etc. provided on the element layer 161 in addition to antennas 130_1 to 130_N, the circuit of the integrated circuit 141 on the substrate 140 side can be miniaturized.

[0067] Furthermore, Figure 7B corresponds to a configuration that illustrates the duplexer DUP in addition to the block diagram configuration shown in Figure 7A. By using a transistor 164 provided on the element layer 161 to provide the amplifier 142 and duplexer DUP on the substrate 120 side, in addition to the antennas 130_1 to 130_N and amplifier 142, the circuit of the integrated circuit 141 on the substrate 140 side can be miniaturized.

[0068] Figures 8A to 8G, Figure 9, and Figures 10A to 10E are schematic diagrams showing the positional relationship between pixels, subpixels contained within pixels, and the conductive layer 131 when viewed from the display surface side.

[0069] Figure 8A shows an example where pixel 116 is composed of three subpixels: subpixel 33R, subpixel 33G, and subpixel 33B. For example, subpixel 33R may display red, subpixel 33G may display green, and subpixel 33B may display blue. Note that the number of subpixels and the types of colors of subpixels in pixel 116 are not limited to these examples.

[0070] Each of the subpixels contained in pixel 116 is equipped with a display element. Typical examples of display elements include light-emitting elements such as organic EL elements, liquid crystal elements, display elements that perform display by electrophoresis or electronic powder fluid (registered trademark) methods (also called electronic ink), shutter-type MEMS display elements, and optical interference type MEMS display elements. In addition to the display element, the subpixel may also have transistors, capacitive elements, and wiring that electrically connects them. Furthermore, a light-receiving element (for example, a light-receiving element using an organic photodiode) may be provided in one of the subpixels, and by receiving light emitted from other subpixels with this light-receiving element, the display device may be provided with additional functions such as imaging or sensing.

[0071] Furthermore, the positional relationship between the subpixels and the conductive layer 131 can be applied to transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays, and direct-view liquid crystal displays. In the case of semi-transmissive or reflective liquid crystal displays, some or all of the pixel electrodes may function as reflective electrodes. For example, some or all of the pixel electrodes may be made of aluminum, silver, etc. In this case, it is also possible to provide a memory circuit such as SRAM beneath the reflective electrodes. This further reduces power consumption. Additionally, a suitable configuration for the applicable display element can be selected from various pixel circuits.

[0072] In the configuration shown in Figure 8A, one aperture 133 of the conductive layer 131 and three subpixels, subpixels 33R, 33G, and 33B, are arranged to overlap each other. In this way, it is preferable that the aperture 133 of the conductive layer 131 is arranged to overlap with one pixel 116. In other words, it is preferable that the spacing between the arranged pixels 116 matches the spacing of the grid of the conductive layer 131. With this configuration, the structure of the surrounding area of ​​each pixel 116 (for example, the film structure of the pixel and the area around the pixel, the thickness of the constituent film, or the uneven shape of the surface) can be made the same, so that the occurrence of display unevenness can be suppressed.

[0073] Furthermore, as shown in Figure 9, for example, a configuration in which two or more pixels 116 and one aperture 133 overlap each other is also possible.

[0074] Figure 8B shows an example where one aperture 133 and one subpixel are arranged so that they overlap each other. By configuring the conductive layer 131 to be placed between the two subpixels contained in one pixel 116 in a plan view, the wiring resistance of the conductive layer 131 can be reduced. As a result, the receiving sensitivity of the antenna can be improved.

[0075] Figure 8C shows an example where pixel 116 has additional sub-pixels 33Y compared to the configuration shown in Figure 8A. For example, sub-pixels 33Y can be pixels capable of displaying yellow. Alternatively, pixels capable of displaying white can be used instead of sub-pixels 33Y. By providing pixel 116 with more sub-pixels than three, power consumption can be reduced.

[0076] Figure 8D also shows an example where one aperture 133 and one subpixel are arranged to overlap each other. That is, it shows an example where the conductive layer 131 is placed between two adjacent subpixels in a plan view. Although not shown, a configuration in which two of the four subpixels overlap one aperture 133 is also possible.

[0077] Figures 8A to 8D show examples where each subpixel is arranged in a stripe pattern, but a configuration in which two-color subpixels are arranged alternately in one direction may also be used, for example, as shown in Figures 8E to 8G. Figure 8E shows a configuration in which a pixel 116 having four subpixels and one aperture 133 overlap each other. Figure 8F shows a configuration in which two adjacent subpixels and one aperture 133 overlap each other. Figure 8G shows a configuration in which one subpixel and one aperture 133 overlap each other.

[0078] Furthermore, the size of the subpixels of pixel 116 (for example, the area of ​​the region that contributes to the display) may differ for each subpixel. For example, the subpixel that displays blue, which has relatively low visual sensitivity, may be made larger, while the subpixel that displays green or red, which has relatively high visual sensitivity, may be made smaller.

[0079] Figures 10A and 10B show an example where subpixel 33B is larger than the other subpixels, among subpixels 33R, 33G, and 33B. Here, an example is shown where subpixels 33R and 33G are arranged alternately, but as shown in Figure 8A, etc., it is also possible to arrange the three subpixels in a stripe pattern and make each of them different in size.

[0080] Figure 10A shows a configuration in which a pixel 116 having three subpixels and one aperture 133 overlap each other. Figure 10B shows a configuration in which one aperture 133 and one subpixel 33B overlap each other, and another aperture 133 and two subpixels (subpixels 33R and 33G) overlap each other.

[0081] Furthermore, the pixel configuration can also be as shown in Figures 10C to 10E. In this configuration, the subpixels 33B are arranged in a stripe pattern, and on both sides of the row of subpixels 33B, there are rows of subpixels 33R and subpixels 33G arranged alternately. Also, one subpixel 33R and one subpixel 33G are arranged on both sides of a single subpixel 33B. Note that while the configurations shown in Figures 10A to 10E illustrate a stripe-shaped configuration of subpixels, the invention is not limited to this. For example, in one embodiment of the present invention, the configuration can also be applied to the shape of pentile-type subpixels.

[0082] Figure 10C shows a configuration in which six subpixels (two of each color) and one aperture 133 overlap each other. Figure 10D shows a configuration in which three subpixels (one of each color) and one aperture 133 overlap each other. Figure 10E shows a configuration in which one subpixel and one aperture 133 overlap each other. Note that the configurations are not limited to those shown here; a configuration in which two or more adjacent subpixels and one aperture 133 overlap each other is also possible.

[0083] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments and examples.

[0084] (Embodiment 2) In this embodiment, an example of the configuration of an electronic device equipped with the display device 100 shown in the above embodiment will be described with reference to Figures 11 and 12. In this embodiment, a smartphone is described as an example of an electronic device, but other electronic devices such as portable game terminals, tablet PCs (Personal Computers), and notebook PCs may also be used. Furthermore, the electronic device according to this embodiment can be applied to other electronic devices that can perform wireless communication.

[0085] The block diagram of the electronic device 10 shown in Figure 11A includes an antenna 130, an application processor 11, a baseband processor 12, an integrated circuit 141 (IC), a memory 14, a battery 15, a power management integrated circuit (PMIC) 16, a display unit 17, a camera unit 18, an operation input unit 19, an audio IC 20, a microphone 21, and a speaker 22. The integrated circuit 141 is also called an RF (Radio Frequency) IC or a wireless chip.

[0086] The antenna 130 is provided according to the frequency band corresponding to the 5G communication standard. As described in Embodiment 1 above, since it can be placed superimposed on the display unit of the display device, multiple antennas corresponding to multiple frequency bands can be placed.

[0087] The application processor 11 has the function of reading programs stored in memory 14 and performing processing to realize various functions of the electronic device 10. For example, the application processor 11 has the function of executing an OS (Operating System) program from memory 14 and also executing application programs that use this OS program as an operating base.

[0088] The baseband processor 12 has the function of performing baseband processing, including encoding (e.g., error correction encoding) or decoding, on data transmitted and received by the electronic device 10. Specifically, the baseband processor 12 has the function of receiving transmitted data from the application processor 11, encoding the received transmitted data, and transmitting it to the integrated circuit 141. The baseband processor 12 also has the function of receiving received data from the integrated circuit 141, decoding the received data, and transmitting it to the application processor 11.

[0089] The integrated circuit 141 has the function of performing modulation or demodulation processing on the data transmitted and received by the electronic device 10. Specifically, the integrated circuit 141 has the function of generating a transmission signal by modulating the transmission data received from the baseband processor 12 with a carrier wave and outputting the transmission signal via the antenna 130. The integrated circuit 141 also has the function of receiving a received signal via the antenna 130, demodulating the received signal with a carrier wave to generate received data, and transmitting the received data to the baseband processor 12.

[0090] Memory 14 has the function of storing programs and data used by the application processor 11. Memory 14 includes non-volatile memory that retains stored data even when the power is cut off, and volatile memory that clears stored data when the power is cut off.

[0091] Battery 15 is used when the electronic device 10 operates without an external power source. Note that the electronic device 10 can also utilize the power from battery 15 even when an external power source is connected. Furthermore, it is preferable to use a rechargeable secondary battery as battery 15.

[0092] The power management IC 16 has the function of generating internal power from the battery 15 or an external power source. This internal power is supplied to each block of the electronic device 10. At this time, the power management IC 16 has the function of controlling the voltage of the internal power for each block that receives the internal power supply. The power management IC 16 controls the voltage of the internal power supply based on instructions from the application processor 11. Furthermore, the power management IC 16 can also control the supply and cutoff of internal power for each block. In addition, the power management IC 16 also has the function of controlling the charging of the battery 15 when an external power supply is available.

[0093] The display unit 17 is a liquid crystal display device or a light-emitting display device, and has the function of displaying various images according to the processing in the application processor 11. The images displayed in the display unit 17 include user interface images in which the user gives operation instructions to the electronic device 10, camera images, videos, etc.

[0094] The camera unit 18 has the function of acquiring images according to instructions from the application processor 11. The operation input unit 19 has the function of a user interface for the user to operate and give operation instructions to the electronic device 10. The audio IC 20 has the function of decoding audio data transmitted from the application processor 11 and driving the speaker 22. In addition, the audio IC 20 has the function of encoding audio information obtained from the microphone 21 to generate audio data and outputting said audio data to the application processor 11.

[0095] Figure 11B shows a perspective view of the electronic device 10, which has the configurations shown in Figure 11A. Figure 11B also illustrates some of the configurations shown in Figure 11A.

[0096] In Figure 11B, the display unit 17 housed in the casing 50 functions as an antenna 130. Figure 11B also illustrates the camera unit 18, operation input unit 19, microphone 21, and speaker 22 shown in Figure 11A.

[0097] As shown in Figure 11B, the display unit 17 occupies most of the housing 50. Therefore, by arranging a conductive layer that functions as an antenna on the substrate that will serve as the display unit, and by arranging an element layer having transistors or the like superimposed on the conductive layer, one aspect of the present invention can be used to extend the communication distance and miniaturize the integrated circuit.

[0098] Figure 12 is a block diagram illustrating an example configuration of the integrated circuit 141. The integrated circuit 141 shown in Figure 12 includes a low-noise amplifier 31, a mixer 32, a low-pass filter 33, a variable-gain amplifier 34, an analog-to-digital conversion circuit 35, an interface section 36, a digital-to-analog conversion circuit 41, a variable-gain amplifier 42, a low-pass filter 43, a mixer 44, a power amplifier 45, and an oscillator circuit 40. Figure 12 also shows an antenna 130, a duplexer DUP, and a baseband processor 12. Note that the low-noise amplifier 31, mixer 32, low-pass filter 33, variable-gain amplifier 34, and analog-to-digital conversion circuit 35 may be referred to as the receiving circuit block, while the digital-to-analog conversion circuit 41, variable-gain amplifier 42, low-pass filter 43, mixer 44, and power amplifier 45 may be referred to as the transmitting circuit block.

[0099] The baseband processor 12 and the integrated circuit 141 are each implemented by separate semiconductor chips.

[0100] In Figure 12, any one of the duplexer DUP enclosed by the dashed line 60, the low-noise amplifier 31, the mixer 32, the mixer 44, or the power amplifier 45 can be manufactured using the transistor described in Embodiment 1 above. Since the transistor is superimposed on a conductive layer provided on the substrate, it can be installed in the display unit. Therefore, some of the circuits of the integrated circuit 141, which is a semiconductor chip, can be installed on the display unit side, thus enabling miniaturization of the integrated circuit.

[0101] The low-noise amplifier 31 amplifies the signal received by the antenna 130 with low noise. The mixer 32 demodulates and down-converts (frequency converts) the signal from the oscillator circuit 40. The low-pass filter 33 removes unwanted high-frequency components from the signal from the mixer 32. The variable-gain amplifier 34 amplifies the output signal from the low-pass filter 33 with a gain that takes into account the input range of the analog-to-digital conversion circuit 35. The analog-to-digital conversion circuit 35 converts the analog signal from the variable-gain amplifier 34 into a digital signal. The digital signal is output to the baseband processor 12 via the interface unit 36 ​​and the differential interface circuit.

[0102] The digital-to-analog conversion circuit 41 converts the digital signal received by the interface unit 36 ​​into an analog signal. The variable gain amplifier 42 amplifies the output signal of the digital-to-analog conversion circuit 41. The low-pass filter 43 removes unwanted high-frequency components from the signal from the variable gain amplifier 42. The mixer 44 modulates and upconverts (frequency converts) the analog signal using the signal from the oscillation circuit 40. The power amplifier 45 amplifies the output signal from the mixer 44 with a predetermined gain and outputs it.

[0103] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments and examples.

[0104] (Embodiment 3) In this embodiment, a schematic cross-sectional view of the display device 100 described in Embodiment 1 above, and a modified example of the schematic cross-sectional view will be described.

[0105] Figure 13 is a schematic cross-sectional view of a display device applicable to the display device described in Embodiment 1. In Figure 13, the cross-sectional structure on the substrate 110 side is shown as the display unit 170, and in addition, the conductive layer 131 and element layer 161 on the substrate 120 side are also shown. The display unit 170 has a transistor 201 and a light-emitting element 202 as an example of a display element. The element layer 161 has a transistor 203.

[0106] Figure 13 shows the cross-sectional structure of transistors 201 and 203 when a metal oxide (also called an oxide semiconductor) is used as the semiconductor in which the channel is formed. The semiconductor in which the channel is formed may be a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate.

[0107] An example configuration for the circuit board 110 will be described below.

[0108] The transistor 201 has a semiconductor layer 216, an insulating layer 220, a conductive layer 221, a conductive layer 217, a conductive layer 213, an insulating layer 215, an insulating layer 214, and the like.

[0109] The substrate 110 on which the transistor 201 is mounted can be an insulating substrate such as a glass substrate, quartz substrate, sapphire substrate, or ceramic substrate, or a semiconductor substrate such as a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate. Furthermore, the substrate 110 can be made flexible, similar to the substrate 120 described later, so that it can be used as a flexible display device.

[0110] An insulating layer 211 is provided on the substrate 110. The insulating layer 211 functions as a barrier layer that prevents impurities such as water and hydrogen from diffusing from the substrate 110 to the transistor 201, and prevents oxygen from diffusing from the semiconductor layer 216 to the insulating layer 211. As the insulating layer 211, for example, a film that is less permeable to the diffusion of hydrogen and oxygen than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0111] A conductive layer 213 is provided on an insulating layer 211, and insulating layers 215 and 214 are provided covering the conductive layer 213. The semiconductor layer 216 is provided on the insulating layer 215. The conductive layer 213 functions as the first gate electrode of the transistor 201, and a portion of the insulating layer 215 and a portion of the insulating layer 214 each function as the first gate insulating layer. It is preferable to use an oxide insulating film such as a silicon oxide film for the insulating layer 215 that is in contact with the semiconductor layer 216. Furthermore, it is preferable to use an insulating film that functions as a barrier layer for the insulating layer 214 between the insulating layer 215 and the conductive layer 213, similar to the insulating layer 211.

[0112] The semiconductor layer 216 preferably has a metal oxide (oxide semiconductor) film having semiconductor properties.

[0113] A pair of conductive layers 217 are spaced apart on the semiconductor layer 216. The conductive layers 217 function as source and drain electrodes. An insulating layer 218 is provided covering the semiconductor layer 216 and the conductive layers 217, and an insulating layer 219 is provided on top of the insulating layer 218. The insulating layers 218 and 219 are provided with openings that reach the semiconductor layer 216, and an insulating layer 220 and a conductive layer 221 are embedded inside these openings. An insulating layer 224 is provided covering the upper surfaces of the insulating layer 219, the conductive layer 221, and the insulating layer 220.

[0114] The conductive layer 221 functions as a second gate electrode. The insulating layer 220 functions as a second gate insulating layer.

[0115] It is preferable to use insulating films that function as barrier layers, similar to insulating layer 211, for insulating layer 218 and insulating layer 224. By covering the conductive layer 217 with insulating layer 218, it is possible to prevent the conductive layer 217 from being oxidized by oxygen contained in insulating layer 219.

[0116] The plug, which is electrically connected to the conductive layer 217, is provided inside the openings in the insulating layers 225, 224, 219, and 218. The plug preferably has a conductive layer 222 that is in contact with the side surface of the opening and the upper surface of the conductive layer 217, and a conductive layer 223 that is embedded inside the conductive layer 222. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 222.

[0117] The light-emitting element 202 has a structure in which a conductive layer 226, an EL layer 228, and a conductive layer 230 are stacked in this order. The light-emitting element 202 is a so-called top-emission type light-emitting element that emits light on the side opposite to the surface on which it is formed. The conductive layer 230 is preferably light-transmitting. The conductive layer 226 is preferably light-reflecting. Light emitted from the EL layer 228 toward the substrate 110 is reflected by the conductive layer 226 and emitted toward the substrate 120.

[0118] Furthermore, the light-emitting element that can be used in the light-emitting element 202 is a self-emitting element, and this category includes elements whose brightness can be controlled by current or voltage. For example, LEDs, organic EL elements, inorganic EL elements, etc., can be used. In particular, the use of organic EL elements is preferred.

[0119] The EL layer 228 has at least an emissive layer. The EL layer 228 may further have layers other than the emissive layer that include a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, or a bipolar material (a material with high electron transport and hole transport properties).

[0120] The EL layer 228 can use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. Each layer constituting the EL layer 228 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0121] When a voltage higher than the threshold voltage of the light-emitting element 202 is applied between the cathode and anode, holes are injected into the EL layer 228 from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer 228, causing the light-emitting material contained in the EL layer 228 to emit light.

[0122] When a white-emitting light-emitting element is used as the light-emitting element 202, it is preferable to have a configuration in the EL layer 228 that includes two or more types of light-emitting materials. For example, white emission can be obtained by selecting two or more light-emitting materials such that the emission of each of them is in a complementary color relationship. For example, it is preferable to include two or more light-emitting materials that emit R (red), G (green), B (blue), Y (yellow), O (orange), etc., or light-emitting materials that emit light containing spectral components of two or more colors from R, G, and B. Furthermore, it is preferable to use a light-emitting element whose emission spectrum has two or more peaks within the wavelength range of the visible light region (e.g., 350 nm to 750 nm). In addition, it is preferable that the emission spectrum of a material having a peak in the yellow wavelength region also has spectral components in the green and red wavelength regions.

[0123] The EL layer 228 is preferably configured by laminating an emissive layer containing an emissive material that emits one color and an emissive layer containing an emissive material that emits another color. For example, the multiple emissive layers in the EL layer 228 may be laminated in contact with each other, or they may be laminated with regions that do not contain any emissive material in between. For example, a region may be provided between a fluorescent emissive layer and a phosphorescent emissive layer that contains the same material as the fluorescent emissive layer or the phosphorescent emissive layer (e.g., host material, assist material) but does not contain any emissive material. This makes it easier to manufacture the light-emitting element and reduces the driving voltage.

[0124] Furthermore, the light-emitting element 202 may be a single element having one EL layer, or it may be a tandem element in which multiple EL layers are stacked with a charge generation layer in between.

[0125] Furthermore, the layers described above, including the light-emitting layer and materials with high hole injection, hole transport, electron transport, and electron injection properties, as well as bipolar materials, may each contain inorganic compounds such as quantum dots or polymer compounds (oligomers, dendrimers, polymers, etc.). For example, quantum dots can be used in the light-emitting layer to function as a light-emitting material.

[0126] Furthermore, as quantum dot materials, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, and core-type quantum dot materials can be used. Materials containing element groups 12 and 16, 13 and 15, or 14 and 16 may also be used. Alternatively, quantum dot materials containing elements such as cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, lead, gallium, arsenic, and aluminum may be used.

[0127] Furthermore, each light-emitting unit may have a so-called microcavity structure (micro-resonator structure) realized by using a conductive film having both transmittance and reflectivity in the conductive layer 230. In this case, it is preferable that the optical distance between the surface of the conductive layer 226 that reflects visible light and the conductive layer 230 that has both transmittance and reflectivity to visible light is adjusted to mλ / 2 (where m is a natural number) or close to it, with respect to the wavelength λ of the light whose intensity is to be enhanced. In order to adjust the optical distance between each light-emitting unit, the thickness of the conductive layer 226 can be made different between each light-emitting unit.

[0128] The light emitted from the light-emitting element 202 has its wavelengths other than the predetermined wavelength absorbed by the colored layer and is emitted to the outside as, for example, red light, green light, or blue light. The colored layer may be made of the quantum dot material described above. In this configuration, by making the light emitted from the light-emitting element 202 blue, color conversion (wavelength conversion) can be performed by the quantum dot material. This configuration is preferable because it does not require manufacturing different light-emitting elements 202 for each color, thus reducing manufacturing costs.

[0129] Alternatively, a photodiode, which is a light-receiving element, may be provided in the same layer as the light-emitting element 202. This configuration allows the display device to be equipped with a touch sensor function. The active layer of the light-receiving element can be a stacked structure in which a p-type semiconductor and an n-type semiconductor are stacked to realize a pn junction, or a stacked structure in which a p-type semiconductor, an i-type semiconductor, and an n-type semiconductor are stacked to realize a pin junction.

[0130] As the semiconductor used for the active layer of the photodetector, an inorganic semiconductor such as silicon or an organic semiconductor containing an organic compound can be used. In particular, using an organic semiconductor material is preferable because it makes it easy to form the EL layer 228 of the light-emitting element 202 and the active layer of the photodetector by vacuum deposition, and the manufacturing equipment can be shared.

[0131] When using an organic semiconductor material as the active layer of a photodetector, the n-type semiconductor material can be fullerene (for example, C 60 , C 70 Electron-accepting organic semiconductor materials such as (etc.) or their derivatives can be used. In addition, as the p-type semiconductor material, electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc) or tetraphenyldibenzoperiflanthene (DBP) can be used. The active layer of the photodetector may be a stacked structure of an electron-accepting semiconductor material and an electron-donating semiconductor material (pn stacked structure), or a stacked structure with a bulk heterostructure layer in which an electron-accepting semiconductor material and an electron-donating semiconductor material are co-deposited between them (pin stacked structure). Furthermore, in order to suppress dark current when light is not irradiated, a layer that functions as a hole-blocking layer or a layer that functions as an electron-blocking layer may be provided around (above or below) the above-mentioned pn stacked structure or pin stacked structure.

[0132] An insulating layer 231 and an insulating layer 232 are laminated on the light-emitting element 202 so as to cover the light-emitting element 202. These two insulating layers function as protective layers to prevent impurities such as water from diffusing into the light-emitting element 202. It is preferable to use an inorganic insulating film with low moisture permeability, such as a silicon oxide film, a silicon nitride film, or an aluminum oxide film, for the insulating layer 231. An organic insulating film with high light transmittance can be used for the insulating layer 232. By using an organic insulating film for the insulating layer 232, the influence of the uneven shape below the insulating layer 232 can be mitigated, and the surface of the insulating layer 232 can be made smooth. This improves the adhesion when bonded to the element layer 161.

[0133] An example configuration for the circuit board 120 will be described below.

[0134] The transistor 203 has a semiconductor layer 305, an insulating layer 309, a conductive layer 310, a conductive layer 306, a conductive layer 303, an insulating layer 304, an insulating layer 302, and the like.

[0135] The description of semiconductor layer 305, insulating layer 309, conductive layer 310, conductive layer 306, conductive layer 303, insulating layer 304, and insulating layer 302 in transistor 203 is the same as that of semiconductor layer 216, insulating layer 220, conductive layer 221, conductive layer 217, conductive layer 213, insulating layer 215, and insulating layer 214 in transistor 201.

[0136] Note that the insulating layer 301, which is a component other than transistor 203, is described in the same way as insulating layer 211. Insulating layers 307, 308, 311, and 312 are described in the same way as insulating layers 218, 219, 224, and 225, respectively. Insulating layer 307 is described in the same way as insulating layer 218. Conductive layers 313 and 314 are described in the same way as conductive layers 222 and 223, respectively.

[0137] The conductive layer 316 provided on the insulating layer 315, and the conductive layer 318 provided on the insulating layer 317, function as wiring for electrically connecting the transistor 203 to the conductive layer 320 or the conductive layer 321.

[0138] The conductive layer 320 provided on the insulating layer 319 functions as an antenna. The conductive layer 321 provided on the insulating layer 319 functions as wiring. It is preferable that the conductive layer 320 and the conductive layer 321 be positioned so as not to overlap with the light-emitting element 202, so that light from the light-emitting element 202 is emitted towards the display surface.

[0139] The transistor 203 can be formed on a substrate with a separate release layer, on which an insulating layer 301 is formed, in the same manner as the transistor 201. The substrate 120, on which the element layer 161 and the conductive layer 131 are provided, can be peeled off at the release surface provided on the release layer and bonded to the substrate 110. The substrates 110 and 120 can be bonded together using an adhesive layer provided on the outer periphery of the substrate. The substrate 120 can be a translucent substrate such as a glass substrate, quartz substrate, sapphire substrate, or plastic substrate. Furthermore, by making the substrate 120 flexible together with the substrate 110, it can be used as a flexible display device.

[0140] Next, we will describe the components such as transistors that can be applied to the display device described above.

[0141] A transistor comprises a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer.

[0142] The structure of the transistor in the display device according to one aspect of the present invention is not particularly limited. For example, it may be a planar transistor, a staggered transistor, or an inverse staggered transistor. It may also be a top-gate or bottom-gate transistor structure. Alternatively, gate electrodes may be provided above and below the channel.

[0143] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single-crystal semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0144] The following section describes transistors that specifically use metal oxide films as the semiconductor layer in which the channel is formed.

[0145] As semiconductor materials used in transistors, metal oxides with an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more, can be used. Typical examples include metal oxides containing indium, such as CAC-OS described later.

[0146] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can retain the charge stored in a capacitive element connected in series with the transistor for a long period of time due to their low off-current.

[0147] The semiconductor layer can be a film represented as an In-M-Zn oxide containing, for example, indium, zinc, and M (a metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium).

[0148] When the metal oxide constituting the semiconductor layer is an In-M-Zn-based oxide, the atomic ratio of the metal elements in the sputtering target used to form the In-M-Zn oxide preferably satisfies In≧M and Zn≧M. As such atomic ratios of the metal elements in the sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1:8, etc. are preferable. Note that the atomic ratio of the semiconductor layer formed includes fluctuations of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target.

[0149] As the semiconductor layer, a metal oxide film with a low carrier density is used. For example, the carrier density of the semiconductor layer is 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3 or less, still more preferably 1×10 11 / cm 3 or less, and most preferably less than 1×10 10 / cm 3 , and metal oxides with a carrier density of 1×10 -9 / cm 3 or more can be used. Such metal oxides are called high-purity intrinsic or substantially high-purity intrinsic metal oxides. Since the metal oxide has a low impurity concentration and a low density of defect levels, it can be said that it is a metal oxide having stable characteristics.

[0150] Note that it is not limited to these, and an oxide semiconductor with an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. Further, in order to obtain the required semiconductor characteristics of the transistor, it is preferable to make the carrier density, impurity concentration, defect density, atomic ratio of metal elements and oxygen, interatomic distance, density, etc. of the semiconductor layer appropriate.

[0151] When silicon or carbon, which are among the Group 14 elements, are present in the metal oxides that make up the semiconductor layer, oxygen vacancies increase in the semiconductor layer, causing it to become n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 × 10⁻¹⁰. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0152] Furthermore, alkali metals and alkaline earth metals can generate carriers when they combine with metal oxides, which can increase the transistor's off-current. For this reason, the concentration of alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in the semiconductor layer should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0153] Furthermore, if nitrogen is present in the metal oxide constituting the semiconductor layer, electrons, which act as carriers, are generated, increasing the carrier density and making it easier for the transistor to become n-type. As a result, transistors using metal oxides containing nitrogen tend to exhibit normally-on characteristics. Therefore, the nitrogen concentration obtained by secondary ion mass spectrometry in the semiconductor layer is 5 × 10⁻¹⁰. 18 atoms / cm 3 The following is preferable:

[0154] Oxide semiconductors are divided into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. Non-single-crystal oxide semiconductors include CAAC-OS (c-axis-aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0155] Furthermore, CAC-OS (Cloud-Aligned Composite Oxide Semiconductor) may be used for the semiconductor layer of the transistor disclosed in one aspect of the present invention.

[0156] In addition, the semiconductor layer of the transistor disclosed in one aspect of the present invention can preferably use the above-mentioned non-single-crystal oxide semiconductor or CAC-OS. Furthermore, as the non-single-crystal oxide semiconductor, nc-OS or CAAC-OS can preferably be used.

[0157] In one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. By using CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

[0158] Furthermore, the semiconductor layer may be a mixed film having two or more regions from among CAAC-OS, polycrystalline oxide semiconductor, nc-OS, pseudo-amorphous oxide semiconductor, and amorphous oxide semiconductor. The mixed film may have a single-layer structure or a stacked structure that includes, for example, two or more of the regions described above.

[0159] Next, the configuration of a CAC (Cloud-Aligned Composite)-OS that can be used in a transistor disclosed in one aspect of the present invention will be described.

[0160] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0161] Furthermore, the metal oxide preferably contains at least indium. It is particularly preferable that it contains indium and zinc. In addition, it may also contain one or more selected from aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium.

[0162] For example, CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide within CAC-OS may be specifically called CAC-IGZO) refers to indium oxide (hereinafter, InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc oxide (hereinafter, In X2 Zn Y2 O Z2 (Let X2, Y2, and Z2 be real numbers greater than 0.) and gallium oxide (hereinafter referred to as GaO X3 (Let X3 be a real number greater than 0.) or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (Let X4, Y4, and Z4 be real numbers greater than 0).) The material separates into mosaic-like structures, and the mosaic-like InO X1 , or In X2 Zn Y2 O Z2 However, it is a uniformly distributed structure within the membrane (hereinafter also referred to as a cloud-like structure).

[0163] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 This is a composite metal oxide having a composition in which a region is the main component and a region is mixed. In this specification, for example, if the atomic ratio of In to element M in the first region is greater than the atomic ratio of In to element M in the second region, then the first region is considered to have a higher concentration of In compared to the second region.

[0164] Note that IGZO is a common name and can refer to a single compound composed of In, Ga, Zn, and O. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 Examples include crystalline compounds represented by (-1 ≤ x0 ≤ 1, where m0 is any number).

[0165] The above-mentioned crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure. A CAAC structure is a crystalline structure in which multiple IGZO nanocrystals are c-axis oriented and linked together without orientation in the ab-plane.

[0166] On the other hand, CAC-OS refers to the material composition of metal oxides. CAC-OS is a material composition containing In, Ga, Zn, and O, in which regions observed as nanoparticles mainly composed of Ga and regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic-like manner. Therefore, in CAC-OS, the crystal structure is a secondary element.

[0167] Furthermore, CAC-OS does not include layered structures of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, is not included.

[0168] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 In some cases, a clear boundary may not be observable in a region where [this component] is the main component.

[0169] Furthermore, if gallium is replaced with one or more elements selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, CAC-OS refers to a configuration in which regions observed as nanoparticles mainly composed of the said metal element and regions observed as nanoparticles mainly composed of In are randomly dispersed in a mosaic pattern.

[0170] CAC-OS can be formed by sputtering, for example, under conditions where the substrate is not intentionally heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. Furthermore, it is preferable that the ratio of oxygen gas flow rate to the total flow rate of the deposition gas during film formation is as low as possible, for example, it is preferable that the oxygen gas flow rate ratio be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0171] CAC-OS is characterized by the absence of a clear peak when measured using the θ / 2θ scan method, an out-of-plane X-ray diffraction (XRD) measurement technique. In other words, X-ray diffraction measurements indicate that no orientation in the ab-plane direction or the c-axis direction of the measurement region is observed.

[0172] Furthermore, in the electron diffraction pattern obtained by irradiating CAC-OS with an electron beam having a probe diameter of 1 nm (also called a nanobeam electron beam), a ring-shaped region of high brightness and multiple bright spots within this ring-shaped region are observed. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure that does not have orientation in the planar and cross-sectional directions.

[0173] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) revealed that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 It can be confirmed that the structure has regions in which the main component is unevenly distributed and mixed.

[0174] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, and therefore has different properties from IGZO compounds. In other words, CAC-OS is GaO X3 Regions where such are the main components, and In X2 Zn Y2 O Z2 , or InO X1 It has a mosaic-like structure consisting of regions where one element is the main component and regions where each element is the main component, with each region being in a separate phase from the others.

[0175] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X3 Compared to regions where these are the main components, this region has high conductivity. In other words, In X2 Zn Y2 O Z2 , or InO X1 In the region where this is the main component, the flow of carriers causes conductivity as a metal oxide to emerge. Therefore, In X2 Zn Y2 O Z2 , or InO X1 The distribution of regions with this as the main component in a cloud-like manner within the metal oxide enables a high field-effect mobility (μ).

[0176] On the other hand, GaO X3 Regions in which these are the main components are In X2 Zn Y2 O Z2 , or InOX1 This region has higher insulating properties compared to the region where GaO is the main component. X3 Regions with these as the main components are distributed within the metal oxide, which suppresses leakage current and enables good switching operation.

[0177] Therefore, when CAC-OS is used in semiconductor devices, GaO X3 Insulation caused by factors such as, X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner, resulting in a high on-current (I on ), and high field-effect mobility (μ) can be achieved.

[0178] Furthermore, semiconductor devices using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for a variety of semiconductor devices, including displays.

[0179] Furthermore, transistors having a CAC-OS semiconductor layer have high field-effect mobility and high driving capability. By using such transistors in a driving circuit, typically a scan line driving circuit that generates gate signals, it is possible to provide a display device with a narrow bezel (also called a narrow-bezel display). Additionally, by using such transistors in a signal line driving circuit of a display device (especially a demultiplexer connected to the output terminal of a shift register in the signal line driving circuit), it is possible to provide a display device with a small number of wires connected to it.

[0180] Furthermore, transistors with CAC-OS in the semiconductor layer do not require the laser crystallization process that transistors using low-temperature polysilicon do. Therefore, even for display devices using large-area substrates, manufacturing costs can be reduced. Moreover, in high-resolution, large-scale display devices such as Ultra Hi-Vision ("4K resolution", "4K2K", "4K") and Super Hi-Vision ("8K resolution", "8K4K", "8K"), using transistors with CAC-OS in the semiconductor layer in the drive circuit and display unit is preferable because it enables writing in a short time and reduces display defects.

[0181] Alternatively, silicon may be used as the semiconductor in which the transistor channel is formed. Amorphous silicon may be used as the silicon, but crystalline silicon is particularly preferred. For example, microcrystalline silicon, polycrystalline silicon, or single-crystal silicon are preferred. In particular, polycrystalline silicon can be formed at a lower temperature than single-crystal silicon and has higher field-effect mobility and higher reliability than amorphous silicon.

[0182] Next, we will describe a configuration applicable to the conductive layer of a display device, particularly the conductive layer of a transistor.

[0183] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or alloys mainly composed of these metals. Films containing these materials can be used as single layers or in multilayer structures. For example, there are single-layer structures of aluminum films containing silicon, two-layer structures of aluminum films laminated on titanium films, two-layer structures of aluminum films laminated on tungsten films, two-layer structures of copper films laminated on copper-magnesium-aluminum alloy films, two-layer structures of copper films laminated on titanium films, two-layer structures of copper films laminated on tungsten films, three-layer structures of titanium films or titanium nitride films with aluminum films or copper films laminated on top and titanium films or titanium nitride films formed on top of those, and three-layer structures of molybdenum films or molybdenum nitride films with aluminum films or copper films laminated on top and molybdenum films or molybdenum nitride films formed on top of those. Furthermore, oxides such as indium oxide, tin oxide, or zinc oxide may be used. In addition, using copper containing manganese is preferable because it improves the controllability of the shape through etching.

[0184] Next, a configuration applicable to the insulating layer of a display device will be described.

[0185] In addition to resins such as acrylic and epoxy, and resins containing siloxane bonds, the insulating materials that can be used for each insulating layer include, for example, inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, and aluminum oxide.

[0186] Furthermore, it is preferable that the light-emitting element is placed between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light-emitting element, thereby suppressing a decrease in the reliability of the device.

[0187] Examples of the low-permeability insulating film include films containing nitrogen and silicon such as a silicon nitride film and a silicon oxynitride film, and films containing nitrogen and aluminum such as an aluminum nitride film. Further, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0188] For example, the water vapor transmission rate of the low-permeability insulating film is 1×10 -5 [g / (m 2 ·day)] or less, preferably 1×10 -6 [g / (m 2 ·day)] or less, more preferably 1×10 -7 [g / (m 2 ·day)] or less, still more preferably 1×10 -8 [g / (m 2 ·day)] or less.

[0189] The above is the description of the components.

[0190] Next, referring to FIGS. 14A, 14B to FIGS. 16A, 16B, a partial manufacturing method of the display device will be described with respect to the configuration example on the substrate 120 side.

[0191] First, a release layer 331 is formed on a manufacturing substrate 330, and an insulating layer 301, which is a layer to be released, is formed on the release layer 331. An element layer 161 and a conductive layer 131 are provided on the insulating layer 301. In this state, the conductive layers 320 and 321 in the conductive layer 131 are covered by an insulating layer 319A as shown in FIG. 14A. The insulating layer 319A corresponds to the insulating layer 319. [[ID=]]

[0192] The release layer 331 and the manufacturing substrate 330 can be separated between the release layer 331 and the insulating layer 301, which is a layer to be released, as shown in FIG. 14B. Further, as shown in FIG. 14B, the surface of the insulating layer 319A exposes the conductive layers 320 and 321 and planarizes the surface by using a polishing technique such as CMP (Chemical Mechanical Polishing).

[0193] The separation between the release layer 331 and the insulating layer 301 which is the layer to be released may be achieved by allowing a liquid such as water to penetrate into the interface to separate the release layer 331 and the insulating layer 301 which is the layer to be released. By the capillary action, the liquid penetrates between the release layer 331 and the insulating layer 301 which is the layer to be released, and it is possible to suppress the electrostatic charge generated during the separation from the substrate from having an adverse effect on the element layer included on the insulating layer 301 side which is the layer to be released (such as the semiconductor element being damaged by the electrostatic charge).

[0194] For example, a tungsten film can be used as the release layer 331. The tungsten film can be oxidized by performing plasma treatment with a gas containing oxygen such as N2O, annealing in a gas atmosphere containing oxygen, or forming a tungsten oxide film by a method such as sputtering in a gas atmosphere containing oxygen, to form a tungsten oxide film between the tungsten film and the layer to be released.

[0195] At the time of performing the release displacement process, the tungsten oxide film preferably contains a large amount of a composition in which the ratio of oxygen to tungsten is less than 3 in the composition of tungsten oxide. In tungsten oxide, there is a crystalline optical shear cross-section in the case of the homologous gas series of W n O (3n-1) ,W n O (3n-2) and shear is likely to occur by overheating. By performing N2O plasma treatment to form a tungsten oxide film, the layer to be released can be separated from the substrate with a small force.

[0196] Alternatively, without forming a tungsten film, a tungsten oxide film can be directly formed. For example, for a sufficiently thin tungsten film, a tungsten oxide film can be formed as the release layer only by performing plasma treatment with a gas containing oxygen, performing annealing treatment in a gas atmosphere containing oxygen, or forming a tungsten oxide film by a method such as sputtering in a gas atmosphere containing oxygen.

[0197] In this process, separation may occur at the interface between the tungsten film and the tungsten oxide film, or within the tungsten oxide film, resulting in the tungsten oxide film remaining on the layer being stripped. This remaining tungsten oxide film can adversely affect the characteristics of the transistor. Therefore, it is preferable to have a step to remove the tungsten oxide film after the separation step between the stripping layer and the layer being stripped. Note that in the above-described method of stripping from the substrate, N2O plasma treatment is not necessarily required, so the step of removing the tungsten oxide film can also be eliminated. In this case, the apparatus can be manufactured more simply.

[0198] For example, a tungsten film with a thickness of 0.1 nm or more and less than 200 nm can be used on the substrate.

[0199] The release layer 331 may contain films other than tungsten, such as molybdenum, titanium, vanadium, tantalum, silicon, aluminum, or alloys thereof. Alternatively, a laminated structure of these films and their oxide films may be used. The release layer 331 is not limited to inorganic films; organic films such as polyimide may also be used.

[0200] As shown in Figure 15A, a substrate 120 can be bonded to the flattened surface of the exposed conductive layer 320 and conductive layer 321. As described above, the substrate 120 can be a translucent substrate such as a glass substrate, quartz substrate, sapphire substrate, or plastic substrate. Furthermore, by making the substrate 120 a flexible substrate (flexible substrate) together with the substrate 110, it can be used as a flexible display device.

[0201] Furthermore, as shown in Figure 15A, the element layer 161 and the conductive layer 131 are provided with an opening 335 that reaches the conductive layer 321. As shown in Figure 15B, the conductive layer 332 is provided to fill the opening 335, and the FPC 333 is provided on the insulating layer 301 side.

[0202] Furthermore, as shown in Figure 16A, a flexible substrate 120A provided on a support substrate 341 may be bonded to the flattened surfaces of the exposed conductive layers 320 and 321. The support substrate 341 is separated from the flexible substrate 120A as shown in Figure 16B. Then, by providing conductive layers 332 and FPC 333 in the same manner as in Figure 14B, a foldable display device can be created.

[0203] Next, an example of an electronic device equipped with a foldable display device will be described with reference to Figures 17A and 17B. An electronic device 400 equipped with a display device according to one aspect of the present invention has a display device comprising regions 401A, 401B, and 401C within a housing 402, as shown in Figure 17A. Regions 401B and 401C are foldable display devices and can be housed within the housing 402 in a folded shape, and therefore can be provided in a bent portion.

[0204] Figure 17B is a cross-sectional view of the electronic device 400 shown in Figure 17A along the line X1-X2. As shown in Figure 17B, the electronic device 400 houses a display device having bent substrates 110 and 120 within a housing 402. The housing 402 also contains a substrate 140 connected to the display device. The housing 402 protects the display device and the like from external stresses.

[0205] Areas 401A, 401B, and 401C, which correspond to the display area, can be placed not only in the flat area of ​​the housing 402 but also in the curved area. As described in Embodiment 1 above, a conductive layer that functions as an antenna can be placed in the display area. Therefore, the area on which the conductive layer that functions as an antenna is placed can be increased.

[0206] Furthermore, an example of an electronic device equipped with a foldable display device different from those shown in Figures 17A and 17B will be described with reference to Figure 18. An electronic device 400A equipped with a display device according to one aspect of the present invention has a display device 401 housed in a foldable housing 402, as shown in Figure 18. Since both the housing 402 and the display device 401 are foldable display devices, the electronic device 400A can be made foldable.

[0207] As shown in Figure 18, the electronic device 400A has substrates 110 and 120 provided along the housing 402. The display device 401 can be provided regardless of the shape of the electronic device 400A. Therefore, the area on which the conductive layer that functions as an antenna is placed can be increased.

[0208] The configuration of the electronic device shown in Figure 18 allows for a deformable configuration. Figures 19A to 19C illustrate electronic devices different from those in Figures 17A, 17B, and 18. The electronic device 400B shown in Figures 19A to 19C illustrates a configuration in which the housing and display device are deformed for use.

[0209] The electronic device 400B shown in Figure 19A can be transformed from the shape shown in Figure 19B to the shape shown in Figure 19C, thereby increasing or decreasing the display area of ​​the display device. This allows for adjustment of the number of conductive layers that function as antennas, which are arranged on the substrate of the display device. For example, the reception sensitivity can be increased when the device is in tablet form compared to when it is folded. Therefore, electronic devices with different reception sensitivities can be created depending on the change in shape.

[0210] This embodiment can be implemented in appropriate combination with other embodiments and examples described herein.

[0211] (Embodiment 4) In this embodiment, a touch panel configuration that can be applied to a display device according to one aspect of the present invention will be described with reference to Figure 20.

[0212] Figure 20 is a top view of the touch panel 500 illustrated in this embodiment. For clarity, representative components are shown in Figure 20. In Figure 20, the conductive layer is shown as an electrode with hatching, but, as in Figure 3A, each conductive layer has an opening in the region that overlaps with the pixel. Therefore, the conductive layer shown in Figure 20 is translucent.

[0213] In addition to the conductive layer 131 that functions as the antenna 130 described in Embodiment 1, the touch panel 500 includes, as an example, conductive layers X1 to X3 that function as electrodes provided in the X direction, and conductive layers Y1 to Y3 that function as electrodes provided in the Y direction.

[0214] The conductive layers X1 to X3 and conductive layers Y1 to Y3 are arranged to fill the spaces between the antennas 130, which are provided at equal intervals. This configuration reduces the area of ​​regions where conductive layers are not provided, thereby reducing transmittance unevenness, and also allows the substrate 120 to be equipped with touch sensor functionality. In addition, by arranging conductive layers that function as electrodes for the touch sensor between adjacent antennas, it is possible to suppress the formation of thin areas in the layer including the conductive layer. Therefore, the coverage of the thin film formed after the conductive layer formation process can be improved, and the surface can be flattened. Furthermore, by making the thickness of the conductive layer uniform, brightness unevenness of light from pixels that transmit light through it can be reduced, resulting in a display device with improved display quality. The frequency of the signal used by the touch sensor is different from the frequency of the signal used in wireless communication, so the signals can be separated.

[0215] As shown in Figure 20, multiple conductive layers that function as antennas can be placed between conductive layers X1 to X3 and conductive layers Y1 to Y3 that function as electrodes for the touch panel. Therefore, antennas of different shapes or sizes can be placed. This allows for a configuration that transmits and receives wireless signals of different frequencies. Furthermore, since multiple antennas of the same shape and size can be placed, beamforming technology using antennas arranged in an array can be applied. Because beamforming technology can provide antenna directivity, it is possible to compensate for radio wave propagation loss when the communication frequency is high.

[0216] Although Figure 20 illustrates a configuration in which the conductive layer 131 is arranged regularly in a square shape, the configuration is not limited to this. For example, the conductive layer 131 may be circular, triangular, pentagonal, hexagonal, octagonal, or other shapes.

[0217] The conductive layers X1 to X3 and Y1 to Y3, which function as electrodes for a touch panel, function as electrodes for a capacitive touch sensor, for example. Capacitive touch sensors include surface-type and projected-type. Projected-type capacitive touch sensors include self-capacitance and mutual-capacitance types, mainly due to differences in the driving method. Mutual-capacitance types are preferred because they enable simultaneous multi-point detection.

[0218] In the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through them at that time is detected. When the object to be detected approaches, the magnitude of this current changes, and by detecting this difference, the position information of the object to be detected can be obtained. In the projected mutual capacitance method, a pulse voltage is applied to either the conductive layers X1 to X3 or the conductive layers Y1 to Y3 in a scanning manner, and the position information of the object to be detected is obtained by detecting the current flowing through the other layer.

[0219] Furthermore, it is preferable that the intersections of conductive layers X1 to X3 and conductive layers Y1 to Y3 are connected via a conductive layer provided in another layer. It is also preferable that the area of ​​the intersections of conductive layers X1 to X3 and conductive layers Y1 to Y3 be as small as possible.

[0220] In the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through them at that time is detected. When an object to be detected approaches, the magnitude of this current changes, and by detecting this difference, the position information of the object to be detected can be obtained. In the projected mutual capacitance method, a pulse voltage is applied to either conductive layer X1 to X3 or conductive layer Y1 to Y3 in a scanning manner, and the position information of the object to be detected can be obtained by detecting the current flowing through the other layer.

[0221] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0222] (Embodiment 5) In this embodiment, an example of an electronic device equipped with the above-mentioned display device will be described using Figures 21A to 21F.

[0223] Electronic devices using a display device according to one aspect of the present invention include televisions, monitors and other display devices, lighting devices, desktop or notebook personal computers, word processors, and DVDs (Digital Versatile). Examples include image playback devices that play still images or videos stored on recording media such as discs, portable CD players, radios, tape recorders, headphone stereos, stereos, desk clocks, wall clocks, cordless telephone handsets, transceivers, mobile phones, car phones, portable game consoles, tablet terminals, large game machines such as pachinko machines, calculators, portable information terminals (also called "portable information terminals"), electronic organizers, e-book readers, electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, electric fans, hair dryers, air conditioning equipment such as air conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, tools such as chainsaws, smoke detectors, and medical equipment such as dialysis machines. Furthermore, examples of industrial equipment include emergency lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, and energy storage devices for power leveling and smart grids.

[0224] Furthermore, mobile devices propelled by electric motors using electricity from energy storage devices are also included in the category of electronic devices. Examples of such mobile devices include electric vehicles (EVs), hybrid electric vehicles (HEVs) that combine internal combustion engines and electric motors, plug-in hybrid electric vehicles (PHEVs), tracked vehicles in which the tires and wheels of these vehicles are replaced with tracks, motorized bicycles including electric assist bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters, aircraft, rockets, artificial satellites, space probes and planetary probes, and spacecraft.

[0225] A display device according to one aspect of the present invention can be used in display units and communication devices built into these electronic devices.

[0226] The electronic device may have sensors (including those with functions to measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0227] Electronic devices can have a variety of functions. For example, they can have functions to display various information (still images, videos, text images, etc.) on a display unit, touch panel functions, functions to display calendars, dates or times, functions to execute various software (programs), wireless communication functions, functions to read programs or data recorded on a recording medium, and so on.

[0228] Figures 21A to 21F show an example of an electronic device.

[0229] Figure 21A shows an example of a wristwatch-type personal information terminal. The personal information terminal 6100 comprises a housing 6101, a display unit 6102, a band 6103, operation buttons 6105, etc. By using a display device according to one aspect of the present invention as the display unit 6102, the personal information terminal 6100 can be miniaturized.

[0230] Figure 21B shows an example of a mobile phone. The personal information terminal 6200 includes a display unit 6202 built into the housing 6201, as well as operation buttons 6203, a speaker 6204, a microphone 6205, and the like.

[0231] Furthermore, the personal information terminal 6200 is equipped with a fingerprint sensor 6209 in an area overlapping with the display unit 6202. The fingerprint sensor 6209 may also be an organic light sensor. Since fingerprints are unique to each individual, the fingerprint sensor 6209 can acquire a fingerprint pattern to perform personal authentication. Light emitted from the display unit 6202 can be used as a light source for acquiring the fingerprint pattern with the fingerprint sensor 6209.

[0232] By using a display device according to one aspect of the present invention as the display unit 6202, the portable information terminal 6200 can be miniaturized.

[0233] Figure 21C shows an example of a cleaning robot. The cleaning robot 6300 has a display unit 6302 located on the top surface of the housing 6301, multiple cameras 6303 located on the sides, a brush 6304, operation buttons 6305, and various sensors. Although not shown, the cleaning robot 6300 is equipped with wheels, a suction port, etc. The cleaning robot 6300 is self-propelled, can detect dirt 6310, and can suck up the dirt from a suction port located on the bottom surface.

[0234] For example, the cleaning robot 6300 can analyze images captured by the camera 6303 to determine the presence or absence of obstacles such as walls, furniture, or steps. Furthermore, if the image analysis detects an object that may become entangled in the brush 6304, such as wiring, the rotation of the brush 6304 can be stopped. By using a display device according to one aspect of the present invention as the display unit 6302, the cleaning robot 6300 can be miniaturized.

[0235] Figure 21D shows an example of a robot. The robot 6400 shown in Figure 21D includes a computing unit 6409, an illuminance sensor 6401, a microphone 6402, an upper camera 6403, a speaker 6404, a display unit 6405, a lower camera 6406, an obstacle sensor 6407, and a movement mechanism 6408.

[0236] Microphone 6402 has the function of detecting the user's voice and ambient sounds. Speaker 6404 has the function of emitting sound. Robot 6400 can communicate with the user using microphone 6402 and speaker 6404.

[0237] The display unit 6405 has the function of displaying various types of information. The robot 6400 can display the information desired by the user on the display unit 6405. The display unit 6405 may be equipped with a touch panel. The display unit 6405 may also be a detachable information terminal, and by installing it in a fixed position on the robot 6400, charging and data transfer can be made possible.

[0238] The display unit 6405 also includes an illuminance sensor, a camera, and operation buttons, and can be operated by touch using a stylus pen or similar device. The functions of the display unit 6405 include voice calls, video calls, email, a notebook, internet connectivity, and music playback.

[0239] The upper camera 6403 and the lower camera 6406 have the function of imaging the area around the robot 6400. In addition, the obstacle sensor 6407 can detect the presence or absence of obstacles in the direction of travel when the robot 6400 moves forward using the movement mechanism 6408. The robot 6400 can recognize its surrounding environment and move safely using the upper camera 6403, the lower camera 6406 and the obstacle sensor 6407. The light-emitting device according to one aspect of the present invention can be used in the display unit 6405.

[0240] By using a display device according to one aspect of the present invention as the display unit 6405, the robot 6400 can be miniaturized.

[0241] Figure 21E shows an example of a television receiver. The television receiver 6500 shown in Figure 21E includes a housing 6501, a display unit 6502, and a speaker 6503, among other components.

[0242] By using a display device according to one aspect of the present invention in the display unit 6502, the television receiver 6500 can be miniaturized.

[0243] Figure 21F shows an example of an automobile. The automobile 7160 has an engine, tires, brakes, steering system, camera, etc. The automobile 7160 is equipped with a display device according to one aspect of the present invention. By using the display device according to one aspect of the present invention in the automobile 7160, the automobile 7160 can function as an IoT device and the display device can be miniaturized.

[0244] The configurations, structures, methods, etc. shown in this embodiment can be used in appropriate combination with those shown in other embodiments and examples.

[0245] (Supplementary Note Regarding the Descriptions in this Specification, etc.) The following supplementary notes are provided regarding the above embodiments and the descriptions of each configuration in the embodiments.

[0246] The configurations shown in each embodiment can be combined as appropriate with those shown in other embodiments or examples to form an aspect of the present invention. Also, when multiple configuration examples are shown within one embodiment, it is possible to combine the configuration examples as appropriate.

[0247] Note that the content described in one embodiment (even a part of the content) can be applied, combined, or replaced with respect to other content described in that embodiment (even a part of the content), and / or content described in one or more other embodiments (even a part of the content).

[0248] Note that the content described in the embodiments refers to the content described using various figures in each embodiment, or the content described using the text described in the specification.

[0249] Note that the figure (even a part of it) described in one embodiment can be combined with another part of that figure, another figure (even a part of it) described in that embodiment, and / or figures (even a part of them) described in one or more other embodiments to form even more figures.

[0250] Furthermore, in this specification, block diagrams classify components by function and show them as independent blocks. However, in actual circuits, it is difficult to separate components by function, and there may be cases where multiple functions are involved in a single circuit, or where a single function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, and can be appropriately rephrased depending on the situation.

[0251] Furthermore, in the drawings, the size, layer thickness, or area are shown at arbitrary sizes for the sake of explanation. Therefore, they are not necessarily limited to that scale. Also, the drawings are schematic for clarity and are not limited to the shapes or values ​​shown in the drawings. For example, they may include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences.

[0252] Furthermore, the positional relationships of the components illustrated in drawings are relative. Therefore, when explaining components with reference to drawings, terms such as "above" and "below" may be used for convenience. The positional relationships of the components are not limited to those described herein and can be appropriately rephrased depending on the situation.

[0253] In this specification and other documents, when describing the connections of a transistor, one of the source and drain is referred to as "one of the source or drain" (or the first electrode or first terminal), and the other of the source and drain is referred to as "the other of the source or drain" (or the second electrode or second terminal). This is because the source and drain of a transistor vary depending on the transistor's structure or operating conditions. The terms source and drain of a transistor can be appropriately rephrased as source (drain) terminal or source (drain) electrode, etc., depending on the context.

[0254] Furthermore, in this specification, the terms "electrode" and "wiring" do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" and "wiring" also include cases where multiple "electrodes" or "wiring" are formed as a single unit.

[0255] Furthermore, in this specification, voltage and potential may be used interchangeably as appropriate. Voltage is the potential difference from a reference potential; for example, if the reference potential is the ground voltage (earth voltage), then voltage can be replaced with potential. Ground potential does not necessarily mean 0V. Note that potential is relative, and depending on the reference potential, it may change the potential applied to wiring, etc.

[0256] Furthermore, in this specification, the term "node" can be replaced with terms such as terminal, wiring, electrode, conductive layer, conductor, impurity region, etc., depending on the circuit configuration and device structure. Also, terminals, wiring, etc., can be replaced with "node."

[0257] In this specification, when A and B are said to be connected, it means that A and B are electrically connected. Here, when A and B are electrically connected, it means that when an object (such as a switch, transistor, or diode, or a circuit including such an object and wiring) is present between A and B, the transmission of electrical signals between A and B is possible. Note that when A and B are electrically connected, this includes cases where A and B are directly connected. Here, when A and B are directly connected, it means that the transmission of electrical signals between A and B is possible via wiring (or electrodes, etc.) without the need for the aforementioned object. In other words, a direct connection means a connection that can be considered as the same circuit diagram when represented by an equivalent circuit.

[0258] In this specification, a switch refers to a device that has the function of controlling whether or not to allow current to flow by being in a conductive state (on state) or a non-conductive state (off state). Alternatively, a switch refers to a device that has the function of selecting and switching the path through which current flows.

[0259] In this specification, channel length refers, for example, to the distance between the source and drain in the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate overlap in a top view of a transistor, or in the region where the channel is formed.

[0260] In this specification, channel width refers, for example, to the length of the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate electrode overlap, or the region in which the channel is formed, where the source and drain face each other.

[0261] In this specification, terms such as "film" and "layer" may be interchanged depending on the context or situation. For example, the term "conductive layer" may be changed to "conductive film." Or, for example, the term "insulating film" may be changed to "insulating layer." [Explanation of Symbols]

[0262] 10: Electronic device, 11: Application processor, 12: Baseband processor, 14: Memory, 15: Battery, 16: Power management IC, 17: Display unit, 18: Camera unit, 19: Operation input unit, 20: Audio IC, 21: Microphone, 22: Speaker, 31: Low-noise amplifier, 32: Mixer, 33: Low-pass filter, 33B: Sub-pixel, 33G: Sub-pixel, 33R: Sub-pixel, 33Y: Sub-pixel, 34: Variable gain amplifier, 35: Analog-to-digital conversion circuit, 36: Interface unit, 40: Oscillator circuit, 41: Digital-to-analog conversion circuit Path, 42: Variable gain amplifier, 43: Low-pass filter, 44: Mixer, 45: Power amplifier, 50: Enclosure, 100: Display device, 110: Circuit board, 111: Display unit, 112: FPC, 113: IC, 114: Wiring, 115: Circuit, 116: Pixel, 120: Circuit board, 120A: Flexible circuit board, 122: FPC, 130: Antenna, 130_N: Antenna, 130_1: Antenna, 131: Conductive layer, 131A: Conductive layer, 131D: Conductive layer, 131P: Conductive layer, 131Q: Conductive layer, 132: Conductive layer, 133: Aperture, 133A: Aperture, 133B: Aperture, 133C :Aperture, 134:Notch, 135:Protrusion, 140:Substrate, 141:Integrated circuit, 142:Amplifier, 160:Region, 161:Element layer, 162:Aperture, 163:Wiring, 164:Transistor, 170:Display section, 201:Transistor, 202:Light-emitting element, 203:Transistor, 211:Insulating layer, 213:Conductive layer, 214:Insulating layer, 215:Insulating layer, 216:Semiconductor layer, 217:Conductive layer, 218:Insulating layer, 219:Insulating layer, 220:Insulating layer, 221:Conductive layer, 222:Conductive layer, 223:Conductive layer, 224:Insulating layer, 225:Insulating layer, 226:Conductive layer, 228 :EL layer, 230: conductive layer, 231: insulating layer, 232: insulating layer, 301: insulating layer, 302: insulating layer, 303: conductive layer, 304: insulating layer, 305: semiconductor layer, 306: conductive layer, 307: insulating layer, 308: insulating layer, 309: insulating layer, 310: conductive layer, 313: conductive layer, 314: conductive layer, 315: insulating layer, 316: conductive layer, 317: insulating layer, 318: conductive layer, 319: insulating layer, 319A: insulating layer, 320: conductive layer, 321: conductive layer, 330: fabricated substrate, 331: release layer, 332: conductive layer, 333: FPC, 335: opening, 341: support substrate, 400: electronic device,400A: Electronic device, 400B: Electronic device, 401: Display device, 401A: Area, 401B: Area, 401C: Area, 402: Enclosure, 6100: Portable information terminal, 6101: Enclosure, 6102: Display unit, 6103: Band, 6105: Operation button, 6200: Portable information terminal, 6201: Enclosure, 6202: Display unit, 6203: Operation button, 6204: Speaker, 6205: Microphone, 6209: Fingerprint sensor, 6300: Cleaning robot, 6301: Enclosure, 6302: Display unit, 6303: Camera, 6304: Brush, 6305: Operation button, 6310: Dust, 6400: Robot, 6401: Illuminance sensor, 6402: Microphone, 6403: Upper camera, 6404: Speaker, 6405: Display unit, 6406: Lower camera, 6407: Obstacle sensor, 6408: Moving mechanism, 6409: Processing unit, 6500: Television receiver, 6501: Enclosure, 6502: Display unit, 6503: Speaker, 7160: Automobile,

Claims

1. A first substrate having multiple pixels with display elements, A second substrate having first to fifth conductive layers, The first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of first apertures. The second conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of second apertures. The third conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of third apertures. The fourth conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of fourth apertures. The fifth conductive layer does not function as an antenna capable of transmitting and receiving wireless signals, and has a plurality of fifth apertures. Among the plurality of pixels, the first pixel and one of the plurality of first apertures have overlapping regions. Of the plurality of pixels, the second pixel and one of the plurality of second apertures have overlapping regions. Of the plurality of pixels, the third pixel and one of the plurality of third apertures have overlapping regions. Of the plurality of pixels, the fourth pixel and one of the plurality of fourth apertures have overlapping regions. A display device in which, among the plurality of pixels, a fifth pixel and one of the plurality of fifth apertures have overlapping regions.

2. A first substrate having multiple pixels with display elements, A second substrate having first to fifth conductive layers, The first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of first apertures. The second conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of second apertures. The third conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of third apertures. The fourth conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of fourth apertures. The fifth conductive layer does not function as an antenna capable of transmitting and receiving wireless signals, and has a plurality of fifth apertures. Among the plurality of pixels, the first pixel and one of the plurality of first apertures have overlapping regions. Of the plurality of pixels, the second pixel and one of the plurality of second apertures have overlapping regions. Of the plurality of pixels, the third pixel and one of the plurality of third apertures have overlapping regions. Of the plurality of pixels, the fourth pixel and one of the plurality of fourth apertures have overlapping regions. Of the plurality of pixels, the fifth pixel and one of the plurality of fifth apertures have overlapping regions. In a plan view, the first portion of the fifth conductive layer is located between the first conductive layer and the second conductive layer. In a plan view, the second portion of the fifth conductive layer is located between the second conductive layer and the third conductive layer. In a plan view, the third portion of the fifth conductive layer is located between the third conductive layer and the fourth conductive layer. In a plan view, the fourth portion of the fifth conductive layer is located between the fourth conductive layer and the first conductive layer, in a display device.

3. A first substrate having multiple pixels with display elements, A second substrate having first to fifth conductive layers, The first conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of first apertures. The second conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of second apertures. The third conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of third apertures. The fourth conductive layer has the function of an antenna capable of transmitting and receiving wireless signals, and has a plurality of fourth apertures. The fifth conductive layer does not function as an antenna capable of transmitting and receiving wireless signals, and has a plurality of fifth apertures. Among the plurality of pixels, the first pixel and one of the plurality of first apertures have overlapping regions. Of the plurality of pixels, the second pixel and one of the plurality of second apertures have overlapping regions. Of the plurality of pixels, the third pixel and one of the plurality of third apertures have overlapping regions. Of the plurality of pixels, the fourth pixel and one of the plurality of fourth apertures have overlapping regions. Of the plurality of pixels, the fifth pixel and one of the plurality of fifth apertures have overlapping regions. In a plan view, the first portion of the fifth conductive layer is located between the first conductive layer and the second conductive layer. In a plan view, the second portion of the fifth conductive layer is located between the second conductive layer and the third conductive layer. In a plan view, the third portion of the fifth conductive layer is located between the third conductive layer and the fourth conductive layer. In a plan view, the fourth portion of the fifth conductive layer is located between the fourth conductive layer and the first conductive layer. A display device in which, in a plan view, the fifth portion of the fifth conductive layer is located between the first portion of the fifth conductive layer and the third portion of the fifth conductive layer, and between the second portion of the fifth conductive layer and the fourth portion of the fifth conductive layer.

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