Temperature control method, computational control unit, and temperature control system in semiconductor wafer manufacturing processes

Abstract

To provide a temperature control method for semiconductor wafer manufacturing processes that can eliminate the influence of stray light on detection results with low computational cost. [Solution] A temperature control method in a semiconductor wafer manufacturing process, which controls an optical heating module that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each adjustment time, at multiple adjustment time points intervened at predetermined time intervals in the semiconductor manufacturing process, wherein at each adjustment time point, a calculation control device controls the optical heating module using a temperature conversion model based on the temperature difference between the processing temperature corresponding to the adjustment time and the target temperature corresponding to the adjustment time, thereby heating the semiconductor wafer to be processed.

Description

Technical Field

[0001] The present invention relates to a temperature control method, and particularly to a temperature control method, an arithmetic control device, and a temperature control system in a semiconductor wafer manufacturing process.

Background Art

[0002] In a semiconductor wafer manufacturing process, there are many processes that are processed at high temperatures, such as an oxidation process and a firing process. At this time, it is required to perform heating and processing while monitoring the temperature of the semiconductor wafer to be heated. However, in order to avoid the temperature detection means from contacting the semiconductor wafer to be heated, a non-contact optical temperature detection means is used to monitor the temperature of the semiconductor wafer to be heated.

[0003] On the other hand, as a countermeasure against the problem of poor efficiency of the core tube for heat treatment, rapid thermal annealing (hereinafter abbreviated as RTA) equipment has been increasingly applied. Usually, the RTA equipment performs heat treatment by irradiating a halogen lamp, but there is a risk that the optical temperature detection means for measuring the temperature of the object to be heated is affected by the halogen lamp and the accuracy of the detection result decreases. In addition, the reflected radiation light (stray light) from other parts in the chamber of the RTA equipment may also affect the detection result. In particular, when heating is performed by irradiating both sides of a bare wafer, the influence on the detection result is said to be severe.

[0004] This problem can be addressed by using optical sealing technology to block stray light when irradiating one side of a semiconductor, but optical sealing cannot be applied when irradiating both sides simultaneously. Furthermore, as described in Patent Document 1, a radiation thermometer called the ripple method is employed, where infrared radiation from the wafer and light radiation from the lamp are measured separately. Since the change in the measurement result of infrared radiation from the wafer is affected by the light reflected from the lamp, the wafer's reflectance coefficient can be derived by measuring the change in the reflected light reflected from the wafer. Then, the wafer's temperature can be calculated by estimating the wafer's reflectance coefficient and eliminating the effects of stray light. However, this method is extremely sensitive to temperature, and the necessary equipment, such as measuring instruments, adjustment devices, and computers for high-speed calculations, are all extremely expensive.

[0005] Furthermore, when the semiconductor material being heated is a highly transmittance SiC or sapphire wafer, the signal-to-noise ratio (SNR) of the detection result relative to the wafer is low, making it difficult to eliminate the effects of stray light. In addition, even if only the surface or back surface is coated, or if there are differences in roughness depending on the wafer type, it affects the accuracy of the detection result of the optical temperature detection device. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] U.S. Patent No. 5154512 [Overview of the project] [Problems that the invention aims to solve]

[0007] In view of the above problems, the present invention aims to provide a temperature control method for a semiconductor wafer manufacturing process that can eliminate the influence of stray light on detection results with low computational cost. [Means for solving the problem]

[0008] To achieve the above objective, the present invention first provides a temperature control method in a semiconductor wafer manufacturing process, which controls an optical heating module that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, wherein at each of the adjustment points, a calculation control device controls... Step (A) converts the optically detected temperature detected by the optical temperature detection device on the semiconductor wafer to be processed into a processing temperature corresponding to the adjustment time using a temperature conversion model, Step (B) calculates the temperature difference between the processing temperature and the target temperature corresponding to the adjustment point and obtains a temperature difference value. Step (C) of calculating heating control parameters based on the temperature difference value, The present invention provides a temperature control method in a semiconductor wafer manufacturing process, which includes the step (D) of controlling the optical heating module based on the aforementioned heating control parameters to heat the semiconductor wafer to be processed.

[0009] Furthermore, the present invention relates to a computational control device that controls an optical heating module that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the predetermined time intervals intervening in a semiconductor manufacturing process, The present invention also provides a arithmetic control device comprising: a memory means for recording each of the target temperatures; and a processor means electrically connected to the memory means, which at each adjustment time, converts the optically detected temperature detected by an optical temperature detection device on the semiconductor wafer to be processed into a processing temperature corresponding to the adjustment time using a predetermined temperature conversion model, calculates the temperature difference between the processing temperature and the target temperature corresponding to the adjustment time as a temperature difference value, calculates heating control parameters based on the temperature difference value, and further controls the optical heating module based on the heating control parameters to heat the semiconductor wafer to be processed.

[0010] Furthermore, the present invention relates to a temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding frame capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit that detects a first optically detected temperature of the semiconductor wafer to be processed toward the holding frame at each adjustment point in the semiconductor manufacturing process, The above-mentioned calculation control device comprises, The processor means of the arithmetic control device also provides a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature of the semiconductor wafer to be processed, detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

[0011] Furthermore, the present invention relates to a temperature control system in which, at multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, each adjustment point heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to that adjustment point. A temperature control device having multiple optical heating modules and a holding frame capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit for detecting a first optically detected temperature of the semiconductor wafer to be processed toward the holding frame at each adjustment point in the semiconductor manufacturing process, and a second optical temperature detection unit for detecting a second optically detected temperature of the semiconductor wafer to be processed toward the semiconductor wafer to be processed held in the holding frame, The above-mentioned calculation control device comprises, The processor means of the arithmetic control device also provides a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature and the second optically detected temperature of the semiconductor wafer to be processed, as detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

[0012] Furthermore, the present invention relates to a temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding tray capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit that detects a first optically detected temperature of the semiconductor wafer to be processed toward the holding tray at each adjustment point in the semiconductor manufacturing process, The above-mentioned calculation control device comprises, The processor means of the arithmetic control device also provides a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature of the semiconductor wafer to be processed, detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

[0013] Furthermore, the present invention relates to a temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding tray capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit for detecting a first optically detectable temperature of the semiconductor wafer to be processed toward the holding tray at each adjustment point in the semiconductor manufacturing process, and a second optical temperature detection unit for detecting a second optically detectable temperature of the semiconductor wafer to be processed toward the semiconductor wafer to be processed held in the holding tray, The above-mentioned calculation control device comprises, The processor means of the arithmetic control device also provides a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature and the second optically detected temperature of the semiconductor wafer to be processed, as detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model. [Effects of the Invention]

[0014] The present invention provides a temperature control method, computational control device, and temperature control system for a semiconductor wafer manufacturing process. These methods convert the optically detected temperature detected by an optical temperature detection device on the semiconductor wafer to be processed into a processing temperature corresponding to the adjustment point using a temperature conversion model. Then, they calculate the temperature difference between the processing temperature and the target temperature corresponding to the adjustment point, and heating control parameters based on this temperature difference. Finally, they control an optical heating module based on the calculated heating control parameters to heat the semiconductor wafer to be processed. Therefore, heating control can be performed with low computational costs and sufficient accuracy, while eliminating the influence of stray light on the detection results, without the need for expensive measuring equipment or expensive computers capable of high-speed calculations. [Brief explanation of the drawing]

[0015] [Figure 1] This is a block diagram showing the configuration outline of the temperature control system of the present invention that implements the temperature control method in the semiconductor wafer manufacturing process of the present invention. [Figure 2]In the temperature control method in the semiconductor wafer manufacturing process of the present invention, it is a flowchart showing the flow of data collection processing for creating a temperature conversion model. [Figure 3] It is an explanatory diagram showing the temperature data detected by the optical temperature detection device for the semiconductor wafer to be detected and the optical detection temperature obtained by performing a filter process on this temperature data. [Figure 4] It is a flowchart showing the flow of the temperature control method in the semiconductor wafer manufacturing process of the present invention. [Figure 5] It is a graph showing four types of temperatures in the detection process time zone of the semiconductor manufacturing process. [Figure 6] It is a graph showing the result of controlling the semiconductor processing based on the contact detection temperature detected by the contact type temperature detection device that contacts the semiconductor wafer to be detected for the pre-detection target semiconductor wafer. [Figure 7] It is a graph showing the result of controlling the semiconductor processing based on the processing temperature converted using the temperature conversion model for the optical detection temperature detected by the optical temperature detection device for the semiconductor wafer to be processed. [Figure 8] It is an explanatory diagram showing a configuration example of holding and heating the semiconductor wafer to be processed with a holding frame. [Figure 9] It is an explanatory diagram showing a configuration example of holding and heating the semiconductor wafer to be processed with a holding dish.

Embodiments for Carrying Out the Invention

[0016] FIG. 1 is a block diagram showing an outline of the configuration of the temperature control system of the present invention that executes the temperature control method in the semiconductor wafer manufacturing process of the present invention.

[0017] The temperature control system of the present invention heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, and comprises, as shown in the figure, an optical temperature detection device 11, a temperature adjustment device 12, and a calculation control device 13 that is signal-connected to the optical temperature detection device 11 and the temperature adjustment device 12.

[0018] The optical temperature detection device 11 detects the optically detected temperature of the semiconductor wafer to be processed toward the holding frame that holds the semiconductor wafer to be processed at each adjustment point in the semiconductor manufacturing process. For example, a pyrometer can be used, but it is also possible to use optical non-contact temperature detection means other than a pyrometer.

[0019] The temperature control device 12 includes a holding frame capable of holding the semiconductor wafer to be processed from below, and a plurality of optical heating modules 121. The optical heating modules 121 can be configured, for example, with rapid thermal annealing (RTA) equipment, but heating means other than RTA can also be used.

[0020] The arithmetic control device 13 includes a memory means 131 and a processor means 132 electrically connected to the memory means 131. The memory means 131 is used to store a temperature conversion model for converting the detection result detected by the optical temperature detection device 11 into a processing temperature. Any type of computer device having a memory means 131 and a processor means 132 can be used as the arithmetic control device 13. Furthermore, it does not need to be a specific piece of equipment that controls only the temperature control system of the present invention; for example, its role can be fulfilled by a control means that controls multiple processing machines in a factory together.

[0021] The following describes in detail the temperature control system of the present invention and the temperature control method in the semiconductor wafer manufacturing process of the present invention that is implemented by the temperature control system of the present invention.

[0022] The present invention provides a temperature control method for a semiconductor wafer manufacturing process that controls the optical heating module 121 of a temperature control device 12, which heats the semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points that are interposed at predetermined time intervals during the time period in the semiconductor manufacturing process when heating is required simultaneously with processing.

[0023] Examples of the above time intervals include 1 second or 0.5 seconds, but they can be set appropriately as needed. The predetermined target temperature corresponding to each adjustment point is a parameter (processing recipe) that has been set in advance to ensure proper heating. Connecting the predetermined target temperatures corresponding to all adjustment points in the aforementioned time period timeline results in a temperature control target curve (see Figures 6 and 7).

[0024] figure 4 The present invention illustrates a temperature control method in the semiconductor wafer manufacturing process, and Figure As shown, the temperature control method in the semiconductor wafer manufacturing process of the present invention allows for adjustment at each adjustment point. The following steps are performed using the arithmetic control unit 13.

[0025] First, in step 201, the optical temperature detection device 11 outputs the optically detected temperature of the semiconductor wafer to be processed to the calculation control device 13.

[0026] In step 202, the processor means 132 of the arithmetic control unit 13 performs filtering on the optically detected temperature received from the optical temperature detection device 11.

[0027] The reason for performing the filtering process here is that there are errors in the detection results of the optical temperature detection device 11. Specifically, Figure 3 shows the temperature data detected by the optical temperature detection device on the semiconductor wafer under different processing processes, and the optically detected temperature obtained by performing filtering on this temperature data. As shown in the figure, there are errors in the temperature data (coarse data) 301 detected by the optical temperature detection device in all processing processes, and the errors are particularly large in the low temperature range of 286°C to 300°C. On the other hand, the filtered data 302 obtained by performing filtering on the temperature data (coarse data) detected by the optical temperature detection device has the errors removed, so it can be seen that the result is closer to the actual temperature, which more accurately reflects the temperature rise due to heating.

[0028] In step 203, the processor means 132 of the arithmetic control device 13 converts the optically detected temperature after the filtering process in step 202 into a processing temperature corresponding to the adjustment time at that point (hereinafter referred to as "the said") using a temperature conversion model.

[0029] In step 204, the processor means 132 of the arithmetic control device 13 calculates the temperature difference between the processing temperature obtained in step 203 and the target temperature corresponding to the adjustment point, and uses this as a temperature difference value.

[0030] In step 205, the processor means 132 of the arithmetic control device 13 calculates heating control parameters based on the temperature difference values ​​obtained in step 204. In this embodiment, for example, the heating control parameters can be calculated from the temperature difference values ​​by applying a PID control (Proportional-Integral-Differential Controller) method. Incidentally, these heating control parameters could be, for example, the output percentage of the optical heating module 121 of the temperature control device 12 that corresponds to different temperature difference values, but any parameter that corresponds to the control or heating effect of the optical heating module 121 of the temperature control device 12 could also be, for example, a specific numerical value of the temperature to be heated.

[0031] In step 206, the processor means 132 of the arithmetic control unit 13 controls the optical heating module 121 of the temperature control device 12 based on the heating control parameters acquired in step 205 to heat the semiconductor wafer to be processed.

[0032] Furthermore, the filtering process performed in step 202 above has the effect of significantly reducing errors in the low-temperature range and improving the accuracy of temperature detection. However, in this invention, it is also possible to omit the filtering process in step 202.

[0033] Therefore, the temperature control method in the semiconductor wafer manufacturing process of the present invention can also be summarized as follows.

[0034] First, in step (A), the optical temperature detection device 11 detects the optically detected temperature of the semiconductor wafer to be processed and converts it to the processing temperature corresponding to the adjustment point using a temperature conversion model (steps 201 to 203).

[0035] Then, in step (B), the temperature difference between the processing temperature obtained in step (A) and the target temperature corresponding to the adjustment point is calculated and used as the temperature difference value (step 204).

[0036] Then, in step (C), heating control parameters are calculated based on the temperature difference value (step 205).

[0037] As a result, in step (D), the optical heating module 121 of the temperature control device 12 is controlled based on the heating control parameters acquired in step (C) to heat the semiconductor wafer to be processed (step 206).

[0038] Furthermore, as described above, the temperature control method in the semiconductor wafer manufacturing process of the present invention executes steps (A) to (D) using the arithmetic control device 13, so the present invention can also be expressed as the arithmetic control device 13. That is, the arithmetic control device 13 of the present invention is an arithmetic control device 13 that controls an optical heating module 121 that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each adjustment time interval at a plurality of adjustment time points intervened in the semiconductor manufacturing process, and comprises a memory means 131 in which each target temperature is recorded, and a processor means 132 electrically connected to the memory means 131 and configured to convert the optically detected temperature detected by the optical temperature detection device 11 on the semiconductor wafer to be processed at each adjustment time point into a processing temperature corresponding to the adjustment time point using a predetermined temperature conversion model, then calculate the temperature difference between the processing temperature and the target temperature corresponding to the adjustment time point as a temperature difference value, calculate heating control parameters based on the temperature difference value, and further control the optical heating module 12 based on the heating control parameters to heat the semiconductor wafer to be processed.

[0039] Thus, the temperature control method for the semiconductor wafer manufacturing process of the present invention does not use the optically detected temperature detected by the optical temperature detection device 11 on the semiconductor wafer to be processed as the direct basis for controlling the optical heating module 121 of the temperature adjustment device 12. Instead, in step (A), the optically detected temperature detected by the optical temperature detection device 11 on the semiconductor wafer to be processed is converted using a temperature conversion model stored in the memory means 131 of the calculation control device 13 to obtain a processing temperature. In step (B), the temperature difference between this processing temperature and the target temperature corresponding to the adjustment point is calculated as a temperature difference value. Then, in step (C), heating control parameters are calculated based on this temperature difference value, and in step (D), the optical heating module 121 of the temperature adjustment device 12 is controlled based on these heating control parameters obtained in step (C).

[0040] In other words, the present invention provides a temperature control method for a semiconductor wafer manufacturing process that eliminates the influence of stray light on the detection result at a low computational cost. This is achieved by treating the processing temperature estimated (converted) using a temperature conversion model to the optically detected temperature, which may be affected by stray light, measured by the optical temperature detection device 11, as the actual temperature of the semiconductor wafer being processed, and controlling each optical heating module 121 of the temperature control device 12 accordingly.

[0041] Therefore, the accuracy of the temperature control method in the semiconductor wafer manufacturing process of the present invention depends on the temperature conversion model. Below, as one embodiment of the present invention, the method for obtaining the temperature conversion model will be described in detail.

[0042] In other words, the temperature control method for semiconductor wafer manufacturing processes of the present invention involves the arithmetic control device 13 performing data acquisition processing at multiple data acquisition points that are interposed by the aforementioned time intervals within a simulated time period corresponding to the time period requiring heating performed simultaneously with processing in the semiconductor manufacturing process, before actually processing the semiconductor wafer to be processed, and then creating a temperature conversion model.

[0043] And the diagram 2 A flowchart of the data collection process is shown.

[0044] As shown in the figure, in step 401, the optical temperature detection device 11 outputs the detection result detected by the pre-detection target semiconductor wafer, which is of the same type as the semiconductor wafer to be processed and is arranged in the same way as the semiconductor wafer to be processed, to the calculation control device 13.

[0045] In step 402, the processor means 132 of the arithmetic control unit 13 converts the detection result received from the optical temperature detection device 11 into the corresponding pre-optical detection temperature and records / saves it in the memory means 131.

[0046] In step 403, the processor means 132 of the arithmetic control unit 13 performs filtering on the pre-optical detected temperature acquired in step 402 and records it in the memory means 131.

[0047] In step 404, a contact-type temperature detection device is used to contact the semiconductor wafer to be detected beforehand. The temperature detected by the contact-type temperature detection device on the semiconductor wafer to be detected beforehand is output to the arithmetic control unit 13 as the contact detection temperature and recorded in the memory means 131.

[0048] In step 405, the processor means 132 of the arithmetic control device 13 calculates the temperature difference between the contact detection temperature and the target temperature relative to the data acquisition time in the temperature control target curve as a pre-temperature difference value and records it in the memory means 131.

[0049] In step 406, the processor means 132 of the arithmetic control device 13 calculates preheating control parameters based on the preheating temperature difference values ​​obtained in step 405. In this embodiment, for example, the preheating control parameters can be calculated from the temperature difference values ​​by applying a PID control (Proportional-Integral-Differential Controller) method.

[0050] In step 407, the processor means 132 of the arithmetic control unit 13 controls the optical heating module 121 of the temperature control device 12 to heat the semiconductor wafer to be detected based on the preheating control parameters acquired in step 406.

[0051] Furthermore, the arithmetic control unit 13 executes steps 401 to 407 above at all data acquisition points, and then, based on the relationship between the pre-optical detection temperature and the contact detection temperature recorded in the data acquisition process executed at all data acquisition points, the arithmetic control unit 13 creates a temperature conversion model that can be calculated from the pre-optical detection temperature to the contact detection temperature and stores it in the memory means 131.

[0052] In other words, with respect to the temperature conversion model used in the temperature control method for the semiconductor wafer manufacturing process of the present invention, at multiple data acquisition points with time intervals intervening, the arithmetic control device 13 records the pre-optical detection temperature corresponding to the detection result detected by the optical temperature detection device 11 on the pre-detection target semiconductor wafer in step (E) (steps 401 to 402), in step (F) the temperature detected by the contact-type temperature detection device that contacts the pre-detection target semiconductor wafer as the contact detection temperature in step (G) The data acquisition process includes recording the temperature difference between the detected temperature and the target temperature corresponding to the data acquisition time as a pre-temperature difference value (step 405), calculating pre-heating control parameters based on the pre-temperature difference value in step (H) (step 406), and controlling the optical heating module 121 based on the pre-heating control parameters to heat the semiconductor wafer to be detected in step (I) (step 407). Then, the arithmetic control unit 13 creates a temperature conversion model based on the pre-optically detected temperature and the contact detected temperature recorded in the data acquisition process performed at all data acquisition times.

[0053] As shown in Figure 5, the temperature conversion model used in the semiconductor wafer manufacturing process temperature control method of the present invention acquires both the pre-optically detected temperature, which is obtained by filtering and converting the rough data detected by the optical temperature detection device 11, and the contact-detected temperature detected by the contact-type temperature detection device, using a pre-detection target semiconductor wafer that is not actually processed and a contact-type temperature detection device that contacts the pre-detection target semiconductor wafer during the data acquisition process. Furthermore, by using the data acquired by performing a heating simulation using the pre-temperature difference value, which is the temperature difference between the contact-detected temperature and the target temperature at each data acquisition point, as the basis for controlling the optical heating module 121, a temperature conversion model is created that can calculate the contact-detected temperature from the pre-optically detected temperature. Therefore, when processing is actually performed, the processing temperature converted using this temperature conversion model from the detection result detected by the optical temperature detection device 11 will be close to the result detected by the contact-type temperature detection device, which is not available when processing is actually performed.

[0054] Incidentally, as the contact-type temperature detection device used in this embodiment, for example, a thermocouple thermometer can be used. This allows for more accurate temperature detection than non-contact optical temperature detection devices.

[0055] Furthermore, Figure 6 shows the heating results when the contact detection temperature is used as the basis for controlling the optical heating module 121, and Figure 7 shows the heating results when the processing temperature converted using a temperature conversion model is used as the basis for controlling the optical heating module 121. As shown in the figures, the present invention controls the optical heating module 121 using the processing temperature converted using a temperature conversion model, and obtains results that are almost the same as the control results when the contact detection temperature is used as the basis for controlling the optical heating module 121. This shows that the effect of eliminating the influence of stray light on the detection results can be obtained even with low computational costs.

[0056] Incidentally, there are many types of processes that are carried out while heating in the semiconductor wafer manufacturing process, and the required processing conditions differ depending on the manufacturer and product specifications. Therefore, the parameters (processing recipes) that are set in advance to heat appropriately will naturally differ, and the actual processing equipment and environment also have an effect. Thus, the temperature conversion model used in the temperature control method for the semiconductor wafer manufacturing process of the present invention is not fixed, and it is necessary to create it by simulating the processing conditions through data acquisition processing in accordance with the actual processing equipment and environment. Furthermore, it is preferable to periodically perform data acquisition processing and update it in accordance with updates to processing equipment and changes in the environment.

[0057] Furthermore, regarding the method for calculating heating control parameters and preheating control parameters in step 205 of the temperature control method in the semiconductor wafer manufacturing process of the present invention and in step 406 of the data acquisition process, a PID control (Proportional-Integral-Differential Controller) method can be applied. However, since the purpose of this calculation is merely to convert the temperature difference values ​​into specific control conditions necessary for controlling the optical heating module 121, there are no particular restrictions as long as the values ​​can be converted into control conditions that are easy to use according to the specifications of the optical heating module 121, etc. Moreover, the process for calculating heating control parameters (PID control) in step 205 of the temperature control method in the semiconductor wafer manufacturing process of the present invention and the process for calculating preheating control parameters (PID control) in step 406 of the data acquisition process can be exactly the same.

[0058] Figures 8 and 9 show examples of configurations for temperature control systems that implement temperature control methods in semiconductor wafer manufacturing processes. Figure 8 is an explanatory diagram showing an example configuration in which the semiconductor wafer to be processed is held and heated in a holding frame, and Figure 9 is an explanatory diagram showing an example configuration in which the semiconductor wafer to be processed is held and heated in a holding tray.

[0059] In the embodiment shown in Figure 8, the temperature control device 12 has a plurality of optical heating modules 121 and a holding frame 101 that can hold the semiconductor wafer 100 to be processed from below, and the optical temperature detection device 11 has two first optical temperature detection units 11a that detect a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding frame 101, and a second optical temperature detection unit 11b that detects a second optically detected temperature of the semiconductor wafer 100 to be processed toward the semiconductor wafer 100 to be processed held in the holding frame 101. Although the first optically detected temperature is actually the temperature of the holding frame 101, the holding frame 101 and the semiconductor wafer 100 to be processed held therein are in very close proximity, so their temperatures can be almost the same, and therefore the first optically detected temperature can also be considered as one of the detected temperatures of the semiconductor wafer 100 to be processed.

[0060] In this embodiment, the optical temperature detection device 11 uses a temperature conversion model to convert the first optically detected temperature and the second optically detected temperature of the semiconductor wafer 100 to be processed into a processing temperature corresponding to the adjustment time, based on both of these temperatures.

[0061] In other words, the processor means 132 of the arithmetic control device 13 can, for example, integrate the two first optically detected temperatures detected by the two first optical temperature detection units 11a and the second optically detected temperature detected by the second optical temperature detection unit 11b into a single optically detected temperature using a method such as sensor fusion, and then convert this integrated optically detected temperature into a processing temperature corresponding to the adjustment point using a temperature conversion model.

[0062] Therefore, the temperature control system of the present invention can be configured as follows. In other words, the semiconductor manufacturing process includes a temperature control device 12 that heats the semiconductor wafer 100 to be processed based on a predetermined target temperature corresponding to each adjustment point at multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, and which has multiple optical heating modules 121 and a holding frame 101 that can hold the semiconductor wafer 100 to be processed from below; an optical temperature detection device 11 that, at each adjustment point in the semiconductor manufacturing process, has a first optical temperature detection unit 11a that detects a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding frame 101 and a second optical temperature detection unit 11b that detects a second optically detected temperature of the semiconductor wafer 100 to be processed toward manufacturing process

[0063] Furthermore, in the embodiment shown in Figure 9, the temperature control device 12 has a plurality of optical heating modules 121 and a holding tray 102 that can hold the semiconductor wafer 100 to be processed from below, and the optical temperature detection device 11 has three first optical temperature detection units 11a that detect the first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding tray 102.

[0064] Similar to the example of the holding frame 101, the positions of the semiconductor wafer 100 to be processed and the holding tray 102 that holds it from below are very close. Therefore, the first optically detected temperature detected by the three first optical temperature detection units 11a, which detect the first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding tray 102, can be directly considered as the detected temperature of the semiconductor wafer 100 to be processed. Thus, the three first optically detected temperatures detected by the three first optical temperature detection units 11a can be integrated into a single optically detected temperature using a method such as sensor fusion, and this integrated optically detected temperature can be converted to the processing temperature corresponding to the adjustment point using a temperature conversion model.

[0065] Therefore, the temperature control system of the present invention can be configured as follows. That is, at multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, the system heats the semiconductor wafer 100 to be processed based on a predetermined target temperature corresponding to each adjustment point, and comprises a temperature adjustment device 12 having a plurality of optical heating modules 121 and a holding tray 102 capable of holding the semiconductor wafer 100 to be processed from below; an optical temperature detection device 11 having a first optical temperature detection unit 11a that detects a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding tray 102 at each adjustment point in the semiconductor manufacturing process; and a calculation control device 13, wherein the processor means of the calculation control device 13 converts the first optically detected temperature of the semiconductor wafer 100 to be processed detected by the optical temperature detection device 11 to a processing temperature corresponding to that adjustment point using a temperature conversion model.

[0066] In addition to the embodiments shown in Figures 8 and 9 above, an embodiment is also conceivable in which, for example, the temperature control device 12 has a holding frame 101 that can hold the semiconductor wafer 100 to be processed from below, and the optical temperature detection device 11 has only a first optical temperature detection unit 11a that detects the first optically detectable temperature of the semiconductor wafer 100 to be processed toward the holding frame 101.

[0067] In this case, the temperature control system of the present invention can be configured as follows. That is, at multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, the system heats the semiconductor wafer 100 to be processed based on a predetermined target temperature corresponding to each adjustment point, and comprises a temperature adjustment device 12 having a plurality of optical heating modules 121 and a holding frame 101 that can hold the semiconductor wafer 100 to be processed from below; an optical temperature detection device 11 having a first optical temperature detection unit 11a that detects a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding frame 101 at each adjustment point in the semiconductor manufacturing process; and a calculation control device 13, wherein the processor means of the calculation control device 13 converts the first optically detected temperature of the semiconductor wafer 100 to be processed detected by the optical temperature detection device 11 into a processing temperature corresponding to that adjustment point at each adjustment point in the semiconductor manufacturing process using a temperature conversion model.

[0068] Furthermore, an embodiment is also conceivable in which, for example, the temperature control device 12 has a holding tray 102 that can hold the semiconductor wafer 100 to be processed from below, and the optical temperature detection device 11 has both a first optical temperature detection unit 11a that detects a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding tray 102, and a second optical temperature detection unit 11b that detects a second optically detected temperature of the semiconductor wafer 100 to be processed toward the semiconductor wafer 100 to be processed held in the holding tray 102.

[0069] In this case, the temperature control system of the present invention can be configured as follows. In other words, the semiconductor manufacturing process heats the semiconductor wafer 100 to be processed based on a predetermined target temperature corresponding to each adjustment point at multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, and includes a temperature adjustment device 12 having multiple optical heating modules 121 and a holding tray 102 capable of holding the semiconductor wafer 100 to be processed from below; an optical temperature detection device 11 having a first optical temperature detection unit 11a that detects a first optically detected temperature of the semiconductor wafer 100 to be processed toward the holding tray 102 and a second optical temperature detection unit 11b that detects a second optically detected temperature of the semiconductor wafer 100 to be processed toward the semiconductor wafer 100 to be processed toward the semiconductor wafer 100 to be processed held in the holding tray 102 at each adjustment point in the semiconductor manufacturing process; and an arithmetic control device 13, wherein the processor means of the arithmetic control device 13 converts the first optically detected temperature and the second optically detected temperature of the semiconductor wafer 100 to be processed detected by the optical temperature detection device 11 into a processing temperature corresponding to that adjustment point using a temperature conversion model.

[0070] Although embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications are possible without departing from its essence. [Explanation of symbols]

[0071] 11. Optical temperature detection device 11a First optical temperature sensing unit 11b Second optical temperature sensing unit 12 Temperature adjustment device 121 Optical heating module 13. Arithmetic Control Unit 131 Memory means 132 Processor means 100 semiconductor wafers to be processed 101 Retention slots 102 Holding dish 301 Temperature data (coarse data) detected by the optical temperature sensor. 302 Filtered data Steps 201-206 Steps 401-407 The original claims as submitted are included below. [1] At multiple adjustment points in a semiconductor manufacturing process that are intervened at predetermined time intervals, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed Temperature in a semiconductor wafer manufacturing process that controls an optical heating module that heats the wafer. A degree control method, wherein at each adjustment point, a calculation control device is used. The optical temperature detection device detects the optically detected temperature of the semiconductor wafer being processed as the temperature. Step (A) to convert to the processing temperature corresponding to the adjustment point using the conversion model. )and, The temperature difference between the processing temperature and the target temperature corresponding to the adjustment point is calculated. Step (B) involves taking the sample and calculating the temperature difference value, Step (C) of calculating heating control parameters based on the temperature difference value, Based on the aforementioned heating control parameters, the optical heating module is controlled to process the half of the workpiece. Step (D) of heating the conductive wafer and the semiconductor wafer manufacturing process in which these steps are performed A method for controlling temperature in a room. [2] At multiple data acquisition points intervening in the aforementioned time interval, the calculation control device shall For a pre-detection target semiconductor wafer of the same type as the aforementioned semiconductor wafer to be processed: A step to record the pre-optically detected temperature corresponding to the detection result detected by the optical temperature detection device. E) and, The contact-type temperature detection device that contacts the semiconductor wafer to be detected beforehand is the semiconductor wafer to be detected beforehand Step (F) of recording the temperature detected on the conductive wafer as the contact detection temperature, The temperature difference between the contact detection temperature and the target temperature corresponding to the data acquisition time is Step (G) to record as a pre-temperature difference value, Step (H) of calculating pre-heating control parameters based on the pre-temperature difference value, Based on the aforementioned pre-heating control parameters, the optical heating module is controlled to perform the pre-detection. The process includes (I) heating the target semiconductor wafer and a data acquisition process. After executing it, The data acquisition process is performed by the aforementioned calculation control device at every data acquisition point. Based on the pre-optical detection temperature and the contact detection temperature recorded in the above, the temperature conversion A model is created for the temperature control in the semiconductor wafer manufacturing process described in [1]. Your method. [3] In step (E), the optical temperature detection device detects the semiconductor wafer to be detected beforehand. The result of applying a filter to the temperature detected is defined as the pre-optical detection temperature. A method for controlling temperature in a semiconductor wafer manufacturing process as described in [2]. [4] In step (A), at the time of adjustment, the optical temperature detection device is the target of processing. The filtering process was performed on the optically detected temperature of the semiconductor wafer. The semiconductor described in [3] is converted to the processing temperature corresponding to the adjustment point above. A method for controlling temperature in a wafer manufacturing process. [5] At multiple adjustment points in a semiconductor manufacturing process that involve predetermined time intervals, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed A control unit for controlling an optical heating module that heats the surface, A memory means on which each of the target temperatures is recorded, and electrically connected to the memory means At each of the aforementioned adjustment points, the optical temperature detection device detects the temperature of the semiconductor wafer being processed. The optically detected temperature is used with a predetermined temperature conversion model to perform the machining process corresponding to the adjustment time. After converting to processing temperature, the processing temperature and the target corresponding to the adjustment point are... The temperature difference with the target temperature is calculated as a temperature difference value, and then the heating control panel is controlled based on the temperature difference value. The lamellar is calculated, and further, the optical heating module is controlled based on the heating control parameters. A process configured to control and heat the semiconductor wafer to be processed. A computation control device equipped with a means for handling data. [6] The arithmetic control device controls the P By the lossr mechanism, For a pre-detection target semiconductor wafer of the same type as the aforementioned semiconductor wafer to be processed: The pre-optically detected temperature corresponding to the detection result detected by the optical temperature detection device is recorded in the memory means. Record it, The contact-type temperature detection device that contacts the semiconductor wafer to be detected beforehand is the semiconductor wafer to be detected beforehand The temperature detected on the conductive wafer is recorded in the memory means as the contact detection temperature, The temperature difference between the contact detection temperature and the target temperature corresponding to the data acquisition time is The pre-temperature difference value is recorded in the memory means, and pre-heating is performed based on the pre-temperature difference value. The control parameters are calculated, and the optical heating mode is calculated based on the pre-heating control parameters. The data acquisition process involves controlling the joules to heat the semiconductor wafer to be detected beforehand. After executing it, The previous Based on the optically detected temperature and the contact detected temperature, the temperature conversion model is created and the memo is created. An arithmetic control device as described in [5], configured to record in a means. [7] The arithmetic control device, by the processor means, controls the optical temperature detection device against the pre-detection The result of filtering the temperature detected on the semiconductor wafer is used in the preceding process. Further configured to record the optically detected temperature in the memory means, as described in [6] A control unit that performs calculations. [8] The processor means that at the adjustment time the optical temperature detection device detects the semiconductor to be processed The filtering process is performed on the optically detected temperature detected on the wafer. Further configured to convert to the processing temperature corresponding to the adjustment time, as described in [6] The arithmetic control unit that is mounted on it. [9] At multiple adjustment points in a semiconductor manufacturing process that are intervened at predetermined time intervals, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed A temperature control system for heating, Multiple optical heating modules and the semiconductor wafer to be processed can be held from below. A temperature control device having a retaining frame, At each adjustment point in the semiconductor manufacturing process, toward the holding frame, A first optical temperature detection unit that detects the first optically detected temperature of the semiconductor wafer to be processed. An optical temperature detection device, A control unit described in any one of items [5] to [8], comprising: The processor means of the arithmetic control device controls each of the adjustments in the semiconductor manufacturing process. At the same time, the optical temperature detection device detects the processed semiconductor wafer's... Using the temperature conversion model, the adjustment corresponding to the said adjustment time is applied to the optically detected temperature 1. A temperature control system that converts the temperature to the processing temperature.

[10] At multiple adjustment points in a semiconductor manufacturing process that are intervened at predetermined time intervals, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed A temperature control system for heating, Multiple optical heating modules and the semiconductor wafer to be processed can be held from below. A temperature control device having a retaining frame, At each adjustment point in the semiconductor manufacturing process, toward the holding frame, A first optical temperature detection unit for detecting the first optically detected temperature of a semiconductor wafer to be processed, and And toward the semiconductor wafer to be processed, which is held in the holding frame, the semiconductor wafer to be processed An optical temperature detector having a second optical temperature detection unit that detects the second optical temperature of the EHA Knowledge device, A control unit described in any one of items [5] to [8], comprising: The processor means of the arithmetic control device controls each of the adjustments in the semiconductor manufacturing process. At the same time, the optical temperature detection device detects the processed semiconductor wafer's... Based on the optically detected temperature 1 and the optically detected temperature 2, the temperature conversion model is used to A temperature control system that converts the temperature to a processing temperature corresponding to the adjustment point.

[11] At multiple adjustment points in a semiconductor manufacturing process, with predetermined time intervals intervening, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed A temperature control system for heating, Multiple optical heating modules and the semiconductor wafer to be processed can be held from below. A temperature control device having a holding tray, At each adjustment point in the semiconductor manufacturing process, toward the holding tray, A first optical temperature detection unit that detects the first optically detected temperature of the semiconductor wafer to be processed. An optical temperature detection device, A control unit described in any one of items [5] to [8], comprising: The processor means of the arithmetic control device controls each of the adjustments in the semiconductor manufacturing process. At the same time, the optical temperature detection device detects the processed semiconductor wafer's... Using the temperature conversion model, the adjustment corresponding to the said adjustment time is applied to the optically detected temperature 1. A temperature control system that converts the temperature to the processing temperature.

[12] At multiple adjustment points in a semiconductor manufacturing process that are intervened at predetermined time intervals, each preceding Based on the predetermined target temperature corresponding to each adjustment point, the semiconductor wafer to be processed A temperature control system for heating, Multiple optical heating modules and the semiconductor wafer to be processed can be held from below. A temperature control device having a holding tray, At each adjustment point in the semiconductor manufacturing process, toward the holding tray, A first optical temperature detection unit for detecting the first optically detected temperature of a semiconductor wafer to be processed, and And toward the semiconductor wafer to be processed, which is held in the holding tray, the semiconductor wafer to be processed An optical temperature detector having a second optical temperature detection unit that detects the second optical temperature of the EHA Knowledge device, A control unit described in any one of items [5] to [8], comprising: The processor means of the arithmetic control device controls each of the adjustments in the semiconductor manufacturing process. At the same time, the optical temperature detection device detects the processed semiconductor wafer's... Based on the optically detected temperature 1 and the optically detected temperature 2, the temperature conversion model is used to A temperature control system that converts the temperature to a processing temperature corresponding to the adjustment point.

Claims

1. A temperature control method in a semiconductor wafer manufacturing process, wherein at multiple adjustment points intervened at predetermined time intervals in the semiconductor manufacturing process, an optical heating module that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the adjustment points, wherein at each of the adjustment points, a calculation control device controls: Step (A) converts the optically detected temperature detected by the optical temperature detection device on the semiconductor wafer to be processed into a processing temperature corresponding to the adjustment time using a temperature conversion model, Step (B) calculates the temperature difference between the processing temperature and the target temperature corresponding to the adjustment time and obtains a temperature difference value. Step (C) of calculating heating control parameters based on the temperature difference value, Step (D) is performed, which involves controlling the optical heating module based on the heating control parameters to heat the semiconductor wafer to be processed. At multiple data acquisition points intervening in the aforementioned time interval, the calculation control device, Step (E) of recording the pre-optically detected temperature corresponding to the detection result detected by the optical temperature detection device for a pre-detection target semiconductor wafer which is of the same type as the semiconductor wafer to be processed, Step (F) includes recording the temperature detected by a contact-type temperature detection device that contacts the semiconductor wafer to be detected as the contact detection temperature, Step (G) of recording the temperature difference between the contact detection temperature and the target temperature corresponding to the data acquisition time as a pre-temperature difference value, Step (H) of calculating pre-heating control parameters based on the pre-temperature difference value, After performing a data acquisition process that includes the step (I) of controlling the optical heating module based on the pre-detection target semiconductor wafer to heat it, A temperature control method in a semiconductor wafer manufacturing process, wherein the calculation control device creates the temperature conversion model based on the pre-optical detection temperature and the contact detection temperature recorded in the data acquisition process performed at all data acquisition points.

2. A temperature control method in a semiconductor wafer manufacturing process according to claim 1, wherein in step (E), the result of performing a filtering process on the temperature detected by the optical temperature detection device with respect to the pre-detection target semiconductor wafer is defined as the pre-optical detection temperature.

3. The temperature control method in a semiconductor wafer manufacturing process according to claim 2, wherein in step (A), the optical temperature detection device detects the optically detected temperature of the semiconductor wafer to be processed at the adjustment time, and then performs the filtering process on that temperature and converts it to the processing temperature corresponding to the adjustment time.

4. A computation control device that controls an optical heating module that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, The system comprises a memory means for recording each of the target temperatures, and a processor means electrically connected to the memory means, which, at each adjustment point, converts the optically detected temperature detected by the optical temperature detection device on the semiconductor wafer to be processed into a processing temperature corresponding to that adjustment point using a predetermined temperature conversion model, calculates the temperature difference between the processing temperature and the target temperature corresponding to that adjustment point as a temperature difference value, calculates heating control parameters based on the temperature difference value, and further controls the optical heating module based on the heating control parameters to heat the semiconductor wafer to be processed. The arithmetic control device, at multiple data acquisition points intervening in the time interval, uses the processor means to: The memory means records the pre-optically detected temperature corresponding to the detection result detected by the optical temperature detection device for a pre-detection target semiconductor wafer of the same type as the semiconductor wafer to be processed, The contact-type temperature detection device that contacts the semiconductor wafer to be detected records the temperature detected on the semiconductor wafer as the contact detection temperature in the memory means, The temperature difference between the contact detection temperature and the target temperature corresponding to the data acquisition time is recorded in the memory means as a pre-temperature difference value, a pre-heating control parameter is calculated based on the pre-temperature difference value, and the optical heating module is controlled based on the pre-heating control parameter to heat the pre-detected semiconductor wafer, and then a data acquisition process is performed. A control unit configured to create a temperature conversion model based on the pre-optical detection temperature and the contact detection temperature recorded in the data acquisition process performed at all data acquisition points, and to record it in the memory means.

5. The arithmetic control device according to claim 4, further configured such that the processor means records the result of filtering the temperature detected by the optical temperature detection device on the pre-detection target semiconductor wafer as the pre-optically detected temperature in the memory means.

6. The arithmetic control device according to claim 5, further configured by the processor means to perform the filtering process on the optically detected temperature detected by the optical temperature detection device on the semiconductor wafer to be processed at the adjustment time, and convert it to the processing temperature corresponding to the adjustment time.

7. A temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding frame capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit that detects the first optically detected temperature of the semiconductor wafer to be processed toward the holding frame at each adjustment point in the semiconductor manufacturing process, A control device according to any one of claims 4 to 6, comprising: The processor means of the calculation control device is a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature of the semiconductor wafer to be processed, detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

8. A temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding frame capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit for detecting a first optically detected temperature of the semiconductor wafer to be processed toward the holding frame at each adjustment point in the semiconductor manufacturing process, and a second optical temperature detection unit for detecting a second optically detected temperature of the semiconductor wafer to be processed toward the semiconductor wafer to be processed held in the holding frame, A control device according to any one of claims 4 to 6, comprising: The processor means of the calculation control device is a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature and the second optically detected temperature of the semiconductor wafer to be processed, as detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

9. A temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding tray capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit that detects the first optically detected temperature of the semiconductor wafer to be processed toward the holding tray at each adjustment point in the semiconductor manufacturing process, A control device according to any one of claims 4 to 6, comprising: The processor means of the calculation control device is a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature of the semiconductor wafer to be processed, detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

10. A temperature control system that heats a semiconductor wafer to be processed based on a predetermined target temperature corresponding to each of the multiple adjustment points intervened at predetermined time intervals in a semiconductor manufacturing process, A temperature control device having multiple optical heating modules and a holding tray capable of holding the semiconductor wafer to be processed from below, An optical temperature detection device having a first optical temperature detection unit for detecting a first optically detectable temperature of the semiconductor wafer to be processed toward the holding tray at each adjustment point in the semiconductor manufacturing process, and a second optical temperature detection unit for detecting a second optically detectable temperature of the semiconductor wafer to be processed toward the semiconductor wafer to be processed held in the holding tray, A control device according to any one of claims 4 to 6, comprising: The processor means of the calculation control device is a temperature control system that, at each adjustment point in the semiconductor manufacturing process, converts the first optically detected temperature and the second optically detected temperature of the semiconductor wafer to be processed, as detected by the optical temperature detection device, into a processing temperature corresponding to that adjustment point using the temperature conversion model.

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