Steaming components

Abstract

To provide a novel composition for an EL device, or to provide a composition for an EL device, in an embodiment, capable of easily manufacturing an EL device with stable characteristics, or to provide a composition for an EL device, in another embodiment, capable of manufacturing an EL device with stable characteristics at low cost.SOLUTION: There is provided a composition for an EL device in which different substances are mixed in advance, and which does not cause a change in characteristics of the EL device even when evaporation is repeatedly performed using the composition, wherein the difference in the 5% weight loss temperature under a pressure of 0.1 Pa or less between the contained substances is less than or equal to 50°C.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a composition for EL devices. Furthermore, one aspect of the present invention relates to the above-mentioned technology. The field of art is not limited to the technical field. The technical field of one aspect of the invention disclosed herein is the field of matter, method, and Or, the present invention relates to a manufacturing method. Alternatively, one aspect of the present invention relates to a process, machine, or This relates to manufactures or compositions of matter. Therefore, more specifically, one aspect of the technical field of the present invention disclosed herein is semiconductor Body devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, energy storage devices, memory devices, imaging devices Examples include their driving methods or their manufacturing methods. [Background technology]

[0002] Electroluminescence (EL) using organic compounds The practical application of EL devices (organic EL devices) that utilize these (ence) is progressing. The basic structure of an EL device is an organic compound layer (EL layer) containing light-emitting material between a pair of electrodes. It is sandwiched in between. A voltage is applied to this device to inject a carrier, and the carrier By utilizing the recombination energy, light emission can be obtained from light-emitting materials.

[0003] Because such EL devices are self-emissive, when used as pixels in a display, they become liquid crystal. Compared to other displays, it has advantages such as higher visibility and the elimination of the need for a backlight, and flat panel displays. It is suitable as a spray element. Furthermore, a display using such an EL device is Furthermore, the ability to manufacture it in a thin and lightweight form is a major advantage. In addition, its extremely fast response speed is also a significant feature. It is one of the signs.

[0004] In addition, since these EL devices can form a light-emitting layer continuously in two dimensions, light emission in a planar shape can be obtained. This is a characteristic that is difficult to achieve with point light sources typified by incandescent bulbs and LEDs, or linear light sources typified by fluorescent lamps. Therefore, it has high utility value as a planar light source applicable to lighting and the like.

[0005] Such EL devices are manufactured by wet methods typified by the inkjet method and dry methods typified by the vapor deposition method. However, due to reasons such as ease of high definition and ease of long life, at present, manufacturing by the vapor deposition method is the mainstream.

[0006] When manufacturing an EL device by the vapor deposition method, the light-emitting layer is formed by co-vaporizing at least two types of substances, a light-emitting center substance and a host material. Co-vaporization is a vapor deposition method in which different substances are simultaneously vaporized from different vapor deposition sources. However, due to improvement of carrier balance inside the light-emitting layer and other reasons, there are cases where three or more types of substances are co-vaporized.

[0007] When co-vaporizing a plurality of substances, the same number of vapor deposition sources as the number of substances is required, and the cost of the vapor deposition apparatus and the maintenance effort may increase significantly.

Prior Art Documents

Patent Documents

[0008]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0009] One aspect of the present invention aims to provide a novel composition for EL devices. Or, In one aspect of the present invention, an EL device that can easily manufacture an EL device with stable characteristics is provided. The objective is to provide a composition for vise. Alternatively, in one aspect of the present invention, a low-cost and stable composition is provided. The aim is to provide an EL device composition that enables the manufacture of EL devices with specific characteristics. To target.

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. The embodiment does not necessarily have to have all of these problems. Furthermore, other problems are... This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings Furthermore, it is possible to extract other issues from the descriptions in the claims and other documents.

[0011] The present invention only needs to solve one of the above-mentioned problems. [Means for solving the problem]

[0012] One aspect of the present invention is a composition for an EL device comprising at least two or more organic compounds. The measurement was performed by thermogravimetric analysis under a pressure of 0.1 Pa or less between the two or more organic compounds. This is an EL device composition in which the temperature difference of the 5% weight loss is 50 degrees or less.

[0013] Alternatively, another aspect of the present invention relates to an ELD comprising a first organic compound and a second organic compound. A composition for a vice, wherein the 0. The difference in temperature of 5% weight loss, measured by thermogravimetric analysis under a pressure of 1 Pa or less, is 50 degrees or less. This is a composition for EL devices.

[0014] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is electron transportable The composition for EL devices has the following properties, wherein the second organic compound has hole transport properties.

[0015] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is benzof This is a composition for EL devices having a rodiazine skeleton or a benzothiodiazine skeleton.

[0016] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is naphthoflor Pyrazine skeleton, phenanthroflopyrazine skeleton, naphthothiopyrazine skeleton, or phena This is a composition for EL devices having one of the endothiopyrazine skeletons.

[0017] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is of the following general formula This is a composition for EL devices represented by (G1).

[0018] [ka]

[0019] In the above general formula (G1), Q represents oxygen or sulfur. Also, Ar 1 is, substitute or It shows an unsubstituted condensed aromatic ring. Also, R 1 and R 2 One is hydrogen, the other is hole transport. This represents a group with a total of 1 to 100 carbon atoms that has a skeleton.

[0020] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound has the following structural formula This is a composition for EL devices represented by (100).

[0021] [ka]

[0022] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is benzofloxacin. This is a composition for EL devices having a pyrimidine skeleton or a benzothiopyrimidine skeleton.

[0023] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound is of the following general formula This is an EL device composition represented by (G2).

[0024] [ka]

[0025] In the formula, Q represents oxygen or sulfur. 1 Ar 2 Ar 3 , and Ar 4 Each is a German The vertical axis represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituents of the aromatic hydrocarbon ring are , an alkyl group having 1 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms, or a group having 5 carbon atoms Monocyclic saturated hydrocarbon groups having 7 to 7 carbon atoms, or polycyclic saturated hydrocarbon groups having 7 to 10 carbon atoms, is any one of the cyano groups, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 to 25. Below. Also, m and n are 0 or 1, respectively. Also, A has a total of 12 or more carbon atoms. It has 100 groups, and also includes benzene rings, naphthalene rings, fluorene rings, and phenanthrene rings. , a heteroaromatic ring containing a triphenylene ring, a dibenzothiophene ring, and a dibenzofuran ring Hetero-aromatic rings, hetero-aromatic rings including carbazole rings, benzimidazole rings, triphenyl It has one or more of the MIN structures. Also, R 1 It is hydrogen, aluminum with 1 to 6 carbon atoms. Kill group, substituted or unsubstituted monocyclic saturated hydrocarbons having 5 to 7 carbon atoms, substituted or unsubstituted. Substituted polycyclic saturated hydrocarbons with 7 to 10 carbon atoms, substituted or unsubstituted hydrocarbons with 6 to 13 carbon atoms This represents an aryl group, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms.

[0026] Alternatively, in another aspect of the present invention, the first organic compound has the following structural formula (200) or below This is an EL device composition represented by the structural formula (201).

[0027] [ka]

[0028] Alternatively, in another aspect of the present invention, in the above configuration, the second organic compound is an aromatic amine. This is a composition for EL devices having a skeleton.

[0029] Alternatively, in another aspect of the present invention, in the above configuration, the second organic compound is carbazeo This is a composition for EL devices having a skeleton.

[0030] Alternatively, in another aspect of the present invention, in the above configuration, the second organic compound is trially This is a composition for EL devices having a luamine skeleton.

[0031] Alternatively, in another aspect of the present invention, in the above configuration, the second organic compound is bicarbazol This is a composition for EL devices having a crystalline skeleton.

[0032] Alternatively, in another aspect of the present invention, in the above configuration, the bicarbazole skeleton is 2- A composition for EL devices in which two carbazolyl groups are bonded to each other at any position up to 4. That is the case.

[0033] Alternatively, in another aspect of the present invention, in the above configuration, the second organic compound is trially This is a composition for EL devices having a luamine skeleton and a carbazole skeleton.

[0034] Alternatively, in another aspect of the present invention, in the above configuration, the nitrogen in the triarylamine A composition for EL devices in which elementary atoms and the carbazole skeleton are bonded via a phenylene group. It is an object.

[0035] Alternatively, in another aspect of the present invention, in the above configuration, the carbazole skeleton is at positions 2 to 4 This is a composition for EL devices that is bonded at position 9 or position 9.

[0036] Alternatively, in another aspect of the present invention, in the above configuration, the described second organic compound is at least This is a composition for EL devices having a single fluorene skeleton.

[0037] Alternatively, in another aspect of the present invention, in the above configuration, the first organic compound and the second This is a composition for EL devices in which an organic compound forms an excited complex.

[0038] Alternatively, in another aspect of the present invention, in the above configuration, the difference in the 5% weight loss temperature is 40 This is a composition for EL devices that is below a certain temperature.

[0039] Alternatively, in another aspect of the present invention, in the above configuration, the difference in temperature of the 5% weight loss is 30 degrees. The following is a composition for EL devices.

[0040] In this specification, the term "light-emitting device" includes image display devices using EL devices. Also, connectors can be attached to EL devices, such as anisotropic conductive film or TCP (Tape Module with Carrier Package attached, print to TCP A module or EL device equipped with a wiring board, or COG (Chip On Glass) Modules in which ICs (integrated circuits) are directly mounted using method s) may also be included as light-emitting devices. Yes, they do. Furthermore, lighting fixtures and the like may have light-emitting devices. [Effects of the Invention]

[0041] In one aspect of the present invention, a novel composition for EL devices can be provided. In one aspect, an EL device that can easily manufacture EL devices with stable characteristics. A composition for use can be provided. Alternatively, in one aspect of the present invention, a composition with inexpensive and stable properties can be provided. We can provide an EL device composition that enables the manufacture of EL devices.

[0042] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings Furthermore, it is possible to extract effects other than those mentioned above from the claims and other descriptions. [Brief explanation of the drawing]

[0043] [Figure 1] Figures 1A to 1C are schematic diagrams of an EL device. [Figure 2] Figures 2A and 2B are conceptual diagrams of an active matrix type light-emitting device. [Figure 3] Figures 3A and 3B are conceptual diagrams of an active matrix type light-emitting device. [Figure 4] Figure 4 is a conceptual diagram of an active matrix type light-emitting device. [Figure 5]Figures 5A and 5B are conceptual diagrams of a passive matrix type light-emitting device. [Figure 6] Figures 6A and 6B are diagrams representing lighting devices. [Figure 7] Figures 7A, 7B1, 7B2, and 7C are diagrams representing electronic devices. [Figure 8] Figures 8A to 8C are diagrams representing electronic devices. [Figure 9] Figure 9 is a diagram representing a lighting device. [Figure 10] Figure 10 is a diagram representing a lighting device. [Figure 11] Figure 11 is a diagram showing an in-vehicle display device and lighting device. [Figure 12] Figures 12A and 12B are diagrams representing electronic devices. [Figure 13] Figures 13A to 13C are diagrams representing electronic devices. [Figure 14] Figures 14A and 14B are schematic diagrams of the vapor deposition apparatus. [Figure 15] Figure 15 shows the luminance-current density characteristics of EL device 1. [Figure 16] Figure 16 shows the luminance-voltage characteristics of EL device 1. [Figure 17] Figure 17 shows the current-voltage characteristics of EL device 1. [Figure 18] Figure 18 shows the external quantum efficiency-luminance characteristics of EL device 1. [Figure 19] Figure 19 shows the emission spectrum of EL device 1. [Figure 20] Figure 20 shows the luminance-current density characteristics of EL device 2. [Figure 21] Figure 21 shows the luminance-voltage characteristics of EL device 2. [Figure 22] Figure 22 shows the current-voltage characteristics of EL device 2. [Figure 23] Figure 23 shows the external quantum efficiency-luminance characteristics of EL device 2. [Figure 24]Figure 24 shows the emission spectrum of EL device 2. [Figure 25] Figure 25 shows the luminance-current density characteristics of EL device 3. [Figure 26] Figure 26 shows the luminance-voltage characteristics of EL device 3. [Figure 27] Figure 27 shows the current-voltage characteristics of EL device 3. [Figure 28] Figure 28 shows the external quantum efficiency-luminance characteristics of EL device 3. [Figure 29] Figure 29 shows the emission spectrum of EL device 3. [Figure 30] Figure 30 shows the brightness-time variation characteristics of EL device 1. [Figure 31] Figure 31 shows the brightness-time variation characteristics of EL device 2. [Figure 32] Figure 32 shows the brightness-time variation characteristics of the EL device 3. [Figure 33] Figure 33 shows the luminance-current density characteristics of the EL device 4. [Figure 34] Figure 34 shows the brightness-voltage characteristics of the EL device 4. [Figure 35] Figure 35 shows the current-voltage characteristics of the EL device 4. [Figure 36] Figure 36 shows the external quantum efficiency-luminance characteristics of EL device 4. [Figure 37] Figure 37 shows the emission spectrum of EL device 4. [Figure 38] Figure 38 shows the brightness-time variation characteristics of the EL device 4. [Figure 39] Figure 39 shows the brightness-time variation characteristics of EL device 2 at high temperatures. [Modes for carrying out the invention]

[0044] The embodiments of the present invention will be described in detail below with reference to the drawings. However, the present invention is as follows Not limited to the description, the form and details thereof may be described without departing from the spirit and scope of the present invention. Those skilled in the art will readily understand that the invention can be modified in various ways. Therefore, the present invention is as follows: This should not be interpreted as being limited to the contents described in the embodiments.

[0045] (Embodiment 1) Organic EL devices are typically formed by sandwiching an EL layer containing an organic compound between a pair of electrodes. The EL layer has a functionally separated laminated structure. This laminated structure is, for example, shown in Figure 1A. As in the L layer 103, hole injection layer 111, hole transport layer 112, light emission layer 113, electron transport layer In addition to layers 114 and 115, other functional layers such as carrier block layers and charge generation layers It is composed of these.

[0046] Each functional layer may consist of a single substance or a mixture of multiple substances. The optical layer 113 is used to suppress extinction due to interference between excitons and to adjust the position of the light-emitting region. A host-guest configuration is often used.

[0047] Typically, in the dry process manufacturing of organic EL devices, two or more different materials are mixed uniformly. To obtain a light-emitting device in which each of the following materials is present in a mixed state within a single layer, A co-evaporation method using different evaporation sources is selected for each material. This is because each material has a different sublimation temperature. Because it has an evaporation temperature, the temperature of the deposition source is determined for each substance and the required deposition rate. This is because it is necessary to adjust the temperature to one that is suitable for the task.

[0048] However, this method requires preparing a deposition source for each type of material used, so the apparatus There are drawbacks, such as the large investment required and the fact that the number of substances to be mixed depends on the equipment.

[0049] On the other hand, in response to the demand for more efficient and longer-lasting EL devices, the configuration of the light-emitting layer 113 is as follows: Further development from the host-guest model described above involves three or more roles such as host, assistant, and guest. Structures composed of even more materials are also beginning to be put into practical use.

[0050] As mentioned above, the types of materials that can be mixed within a single light-emitting layer depend on the number of deposition sources in the apparatus, Furthermore, increasing the number of evaporation sources requires a certain amount of investment.

[0051] Here, multiple substances are mixed in advance, and deposition is performed using one deposition source, and the number of deposition sources Let's consider a method for depositing the above materials into films. Figure 14 shows three types of materials (compound 1, compound 1, compound 1). 2. This is a schematic diagram of the process of forming a layer mixed with a dopant by vapor deposition. In Figure 14A, 3 The diagram shows the process of depositing different types of materials from different deposition sources, therefore, three deposition processes are shown. It requires a source. On the other hand, Figure 14B shows two substances (compound 1, compound 2) that are mixed beforehand. The diagram shows the case where the combined composition is deposited from a single deposition source, so three different substances are vaporized. Even when deposition is required, only two deposition sources are needed. However, each material has its own unique evaporation and sublimation temperatures. Because of the existence of [unclear], even if you perform film deposition using pre-mixed materials, the target film will not be achieved. Forming layers of the desired thickness and composition is difficult.

[0052] Furthermore, considering the need to commercialize the product and bring many items to market, this method is the same as vapor deposition. Even if multiple devices are manufactured using a power source continuously, EL devices without characteristic fluctuations are possible. It needs to be available.

[0053] As mentioned earlier, the evaporation and sublimation temperatures of substances are unique to each substance. When mixing materials and performing deposition using a single deposition source, the material with the lower temperature will be deposited more. This can lead to a gradual change in the composition of materials inside the deposition source. If the composition of the internal sample changes, the composition of the film will change with each repeated deposition, As a result, the characteristics of the EL device change.

[0054] Therefore, the present inventors have developed a composition for EL devices in which different substances are pre-mixed. Therefore, to create a composition in which the characteristics of the EL device do not change even when repeated deposition is performed using the composition. We conducted an investigation into this matter. As a result, at a pressure of 0.1 Pa or less, 5% of the weight of the contained substance A composition for EL devices with a temperature difference of 50°C or less in volume reduction will not change in composition even with repeated deposition. This composition is less prone to deformation, and it also does not significantly alter the characteristics of EL devices fabricated using it. We found that the transformation is less likely to occur.

[0055] In other words, one aspect of the present invention relates to an EL device assembly comprising at least two or more organic compounds. A product wherein thermogravimetric analysis is performed between the two or more organic compounds under a pressure of 0.1 Pa or less. EL device compositions in which the difference in 5% weight loss temperature measured under constant conditions is 50 degrees or less in all cases. That is the case.

[0056] The temperature at which weight loss of 5% occurs is determined by thermogravimetric-differential thermal analysis (TG-DTA). (metry-Differential Thermal Analysis) is performed. It can be determined from the relationship between weight and temperature (thermogravimetric analysis). Note that the measurement is performed when the deposition operation is 0 Considering that the work is performed in a pressure environment of 0.1 Pa or less, it is preferable to perform it in an atmosphere of 0.1 Pa or less. It seems so. Furthermore, if the pressure for deposition is predetermined, the measurement should be taken under that pressure. It is preferable to use a value.

[0057] From a composition obtained by mixing materials in which the difference in 5% weight loss temperature measured in this way is 50°C or less If the sample is such that repeated deposition results in little change in composition and good properties, then ELde This makes it possible to manufacture vises stably. Furthermore, the temperature difference for a 5% weight loss is less than 40°C. It is preferable that the temperature is 30°C or lower, more preferably 20°C or lower. Even better.

[0058] One embodiment of the present invention provides a composition for an EL device consisting of two types of organic compounds: a first organic compound and a second organic compound. If the first organic compound is composed of such a substance, then the first organic compound has electron transport properties, and the second organic It is preferable that the compound has hole transport properties. In this case, the EL device composition is It is useful as a composition for forming the light-emitting layer 113 in an EL device. When organic compound 1 and organic compound 2 form an excited complex, the luminescent layer It is also useful as a composition for forming 113. Furthermore, the mixing ratio is by weight. A ratio of 1:9 to 9:1 between the first and second organic compounds is preferred, and 2:8 to 8:2 is also preferable. It is preferable.

[0059] Furthermore, the first organic compound is a material having hole transport properties, and the second organic compound is the first organic compound By making the material an electron-accepting substance, it is used as a composition for forming the hole injection layer 111. This becomes useful. Furthermore, the first organic compound is an electron-transporting material, and the second organic compound is By making the first organic compound an electron-donating substance, an electron transport layer 114 is formed. It is useful as a composition for the eyes.

[0060] In addition, when the first organic compound has electron transporting properties and the second organic compound has hole transporting properties, the first organic compound having a benzofurodiazine skeleton or a benzothiodiazine skeleton is effective for producing a more stable EL device. In that case, the first organic compound is more preferably any of a naphthofuropyrazine skeleton, a phenanthrofuropyrazine skeleton, a naphthothiopyrazine skeleton, or a phenanthrothiopyrazine skeleton, and is even more preferably an organic compound represented by the following general formula (G1). In this case, the composition for an EL device is useful as a composition for forming the light emitting layer 113 in the EL device.

[0061]

Chemical formula

[0062] Or, another aspect of the present invention is a composition for an EL device in which the first organic compound has the following structural formula (100).

[0063] [ka]

[0064] Furthermore, the first organic compound has electron transport properties, and the second organic compound has hole transport properties. If present, the first organic compound is a benzophropyrimidine skeleton or a benzothiopyrimidine skeleton. Having a skeleton is preferable for creating a more stable EL device, and the following general formula (G It is even more preferable that the compound is an organic compound represented by (2).

[0065] [ka]

[0066] In the formula, Q represents oxygen or sulfur. 1 Ar 2 Ar 3 , and Ar 4 That Each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the position of the aromatic hydrocarbon ring The substitution group is an alkyl group having 1 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms, or carbon Monocyclic saturated hydrocarbon groups with 5 to 7 prime numbers, or polycyclic saturated hydrocarbon groups with 7 to 10 carbon atoms. It is either a cyano group or one of the above, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more. It is 25 or less. Also, m and n are either 0 or 1. Also, A has a total of 1 carbon atoms. 2 to 100 groups, and also benzene ring, naphthalene ring, fluorene ring, phenant Heteroaromatic rings including ylene rings, triphenylene rings, and dibenzothiophene rings, and dibenzofuran rings. Hetero-aromatic rings containing a carbazole ring, hetero-aromatic rings containing a benzimidazole ring, triphe It has one or more of the nylamine structures. Also, R 1 hydrogen, carbon atoms numbering 1 to 6 Alkyl alkyl groups, substituted or unsubstituted monocyclic saturated hydrocarbons having 5 to 7 carbon atoms, substituted or This refers to unsubstituted polycyclic saturated hydrocarbons with 7 to 10 carbon atoms, and substituted or unsubstituted polycyclic saturated hydrocarbons with 6 to 10 carbon atoms. Thirteen aryl groups, or substituted or unsubstituted heteroaryl groups having 3 to 12 carbon atoms. This is expressed as follows. In the above general formula (G2), it is preferable that m and n are 0.

[0067] Alternatively, in another aspect of the present invention, the first organic compound has the following structural formula (200) or below This is an EL device composition represented by the structural formula (201).

[0068] [ka]

[0069] Furthermore, the first organic compound has electron transport properties, and the second organic compound has hole transport properties. In this case, the second organic compound has an aromatic amine skeleton, which provides high hole transport and stability. It is preferable because it is good. Also, the second organic compound has a triarylamine skeleton. It is preferable that it has a carbazole skeleton or both.

[0070] Furthermore, the second organic compound is a combination of the above triarylamine skeleton and carbazole skeleton. If it is an organic compound having a skeleton, the nitrogen atom in the triarylamine skeleton and The carbazole skeleton is a stable organic compound bonded via a phenylene group. It is preferable because it has good reliability. Also, similarly, the second organic compound is the above triaryl a If the organic compound has both a mine skeleton and a carbazole skeleton, The ruvacol skeleton is reliably bonded to the amine at positions 2 to 4 or 9. From that perspective, it is preferable.

[0071] If the second organic compound described above is an organic compound having a carbazole skeleton, then the second organic compound described above The fact that the organic compound has a bicarbazole skeleton is that it has good hole transport properties and is stable. It is preferable because it has high qualitative properties. In this case, the bicarbazole skeleton is any of the positions 2 to 4. In this structure, it is preferable that two carbazolyl groups are bonded to each other.

[0072] A composition for an EL device according to one aspect of the present invention having the above configuration is subjected to continuous deposition. Even if this is done, the composition of the composition itself, or the composition of the deposited film, is unlikely to change significantly. EL devices manufactured using this EL device composition exhibit good and stable characteristics. It can be used as an EL device to display information.

[0073] Furthermore, it becomes possible to deposit multiple organic compounds using a single deposition source, thus eliminating excess or additional waste. It is possible to manufacture EL devices with good characteristics without making additional capital investments. Therefore, EL devices with good characteristics can be manufactured inexpensively.

[0074] (Embodiment 2) In this embodiment, the EL device can be manufactured using the EL device composition shown in Embodiment 1. Detailed embodiments of possible EL devices will be described. Figure 1 shows the EL device shown in Embodiment 1. This shows an EL device that can be fabricated using a device composition. Figure 1A shows E The L device has an anode 101, a cathode 102, and an EL layer 103.

[0075] In Figure 1, the EL layer 103 has various functional layers, including the light-emitting layer 113. In addition to the above-mentioned light-emitting layer, there is a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer It may also have 115, etc. The light-emitting layer 113 contains a light-emitting material, and in this embodiment The EL device described in this description obtains light from the light-emitting material. The light-emitting layer 113 contains a host It may contain ingredients or other materials.

[0076] Next, we will describe the detailed structure and material examples of the EL devices mentioned above.

[0077] Anode 101 is a metal, alloy, or conductive compound with a large work function (specifically, 4.0 eV or more). It is preferable to form them using materials and mixtures thereof. Specifically, for example, Indium tin oxide (ITO), silicon, etc. Or silicon dioxide-containing indium oxide-tin oxide, indium oxide-zinc oxide, oxide Examples include indium oxide (IWZO) containing tungsten and zinc oxide. These conductive metal oxide films are usually deposited by sputtering, but the sol-gel method is also used. Any method can be used to manufacture it. An example of a manufacturing method is indium oxide-zinc oxide. Sputtering is performed using a target to which 1-20 wt% zinc oxide has been added to indium oxide. There are methods such as the ring method for formation. Also, it contains tungsten oxide and zinc oxide. Indium oxide (IWZO) is 0.5 to 5 times stronger than tungsten oxide relative to indium oxide. Using a target containing wt% and 0.1-1 wt% zinc oxide, the sputtering method is used. It can also be formed from gold (Au), platinum (Pt), nickel (Ni), and tungsten. Gusten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co) copper (Cu), palladium (Pd), or nitrides of metallic materials (e.g., titanium nitride), etc. These include graphene, which can also be used. Furthermore, the composite material described later can be used in the EL layer 10 By using it in the layer in contact with the anode 101 in 3, the electrode material can be selected regardless of the work function. You will be able to do it.

[0078] The EL layer 103 preferably has a laminated structure, but the laminated structure is not particularly limited. There is no fixed term, and the hole injection layer, hole transport layer, light emission layer, electron transport layer, electron injection layer, and carrier block are all included. Various layer structures can be applied, such as a block layer, an exciton blocking layer, and a charge generation layer. In the configuration, as shown in Figure 1A, there is a hole injection layer 111, a hole transport layer 112, and a light-emitting layer 11 In addition to 3, a configuration having an electron transport layer 114 and an electron injection layer 115, as shown in Figure 1B In addition to the hole injection layer 111, hole transport layer 112, and light emission layer 113, there is also an electron transport layer 114 Two types of configurations will be described: one having an electron injection layer 115 and a charge generation layer 116. The materials that make up each layer are described below in detail.

[0079] The hole injection layer 111 can be formed using an electron-accepting material. Acceptable substances include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples include tungsten oxides and manganese oxides. Among these, oxidation Molybdenum is a desirable substance because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. .

[0080] In addition to the substances mentioned above, other organic compounds that have electron-withdrawing groups (halogen groups or cyano groups) can be listed. It is possible to have electron-withdrawing groups (especially halogen groups such as fluoro groups and cyano groups). [3] Radialene derivatives have very high electron-accepting properties and are therefore used as electron-accepting substances. This is an organic compound that can be suitably used. Examples of such organic compounds include, for example, , 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation) :F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinone Dimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8, 9,12-Hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8 -Hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), etc. α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2, 3,5,6-Tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3 -Cyclopropane triylidentris[2,6-Dichloro-3,5-Difluoro-4-( [Trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-Cyc Lopropane triylidenates [2,3,4,5,6-pentafluorobenzeneacetoni Examples include trills. As for organic compounds that have electron-accepting properties, HAT-CN is one example. Compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring containing multiple complex atoms are thermally stable. This is preferable.

[0081] In addition, there are phthalocyanines such as phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine (CuPc). Cyanine-based complex compounds, 4,4'-bis[N-(4-diphenylaminophenyl)-N -phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3- Methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl Aromatic amine compounds such as )-4,4'-diamine (abbreviation: DNTPD) can also be used. Yes, it is possible. Also, poly(3,4-ethylenedioxythiophene) / poly(styrene sulfone) Polymers such as acids (PEDOT / PSS) can also be used.

[0082] These electron-accepting materials can transport electrons from adjacent hole transport layers (or hole transport materials). By applying an electric field, electrons can be extracted, and by extracting electrons, the adjacent hole transport layer is removed. Holes can be injected (generated) into (or into) a hole transport material.

[0083] Furthermore, the hole injection layer 111 includes a material having hole transport properties and a material having electron-accepting properties. Composite materials can also be used that possess electron-accepting properties. By using a composite material containing the substance, electrodes can be formed regardless of the work function. You can choose the material. In other words, you can choose not only a material with a high work function for the anode 101, but also This makes it possible to use materials with a small work function. In this regard, the electron-accepting material described above can be used.

[0084] Examples of hole-transporting substances used in composite materials include aromatic amine compounds and carbazoles. Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.) Various organic compounds can be used. As a substance, 1 × 10 -6 cm 2 It is preferable that the material has a hole mobility of / Vs or higher. It seems so. Below, we will discuss materials that can be used as hole transporting materials in composite materials. List the organic compounds specifically.

[0085] Aromatic amine compounds that can be used in composite materials include N,N'-di(p-tolyl )-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4' -Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated) Name: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl }-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: D NTPD), 1,3,5-Tris[N-(4-diphenylaminophenyl)-N-phenyl [Aminobenzene] (abbreviation: DPA3B), 1,1-bis-(4-bis(4-methyl- Examples include phenyl-amino-phenyl-cyclohexane (abbreviated as TAPC). Yes. Specifically, a carbazole derivative is 3-[N-(9-phenylcarbazole [Lu-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPC) A1) 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenyl Mino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl [Lu)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: C BP), 1,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: T CPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-cal Bazol (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2 ,3,5,6-tetraphenylbenzene and the like can be used as aromatic hydrocarbons. For example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation) :t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthrace , 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9, 10-Diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene Sen (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)ant Spiral (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl [2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]ant Helical, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-Tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9' -biantryl, 10,10'-diphenyl-9,9'-biantryl, 10,10'- Bis(2-phenylphenyl)-9,9'-biantryl,10,10'-bis[(2, 3,4,5,6-Pentaphenyl)phenyl]-9,9'-bianthryl, anthracene Tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl) Examples include rylene. In addition, pentacene, coronene, and the like can also be used. It may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl group include , 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9, 10-Bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPV) Examples include PA (Public Action).

[0086] Also, poly(N-vinylcarbazole) (abbreviation: PVK) and poly(4-vinyltriphenyl (Abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamine) [Phenylamino(N'-phenylamino)phenyl(N'-phenylamino)phenyl(methacrylamide) (abbreviated) Name: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis( High molecular weight compounds such as phenyl(benzidine) (abbreviated as Poly-TPD) can also be used. Cut.

[0087] The hole transport layer 112 is formed by including a material that has hole transport properties. The materials are 1 x 10 -6 cm 2 It is preferable to have a hole mobility of / Vs or higher. .

[0088] As a material having the above hole transport properties, 4,4'-bis[N-(1-naphthyl)-N-f [phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl)- N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD) ), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenyl [Luaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorine) Len-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4 -phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (Abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H- Carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1- Naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl- 9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9- Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl) Phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-( 9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluor Compounds having an aromatic amine skeleton such as len-2-amine (abbreviation: PCBASF), and 1 ,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)benzene Zolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)- 9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H- Compounds having a carbazole skeleton, such as carbazole (abbreviated as PCCP), and 4,4' ,4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: D BT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene -9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4 -(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzo Compounds containing a thiophene skeleton, such as Ophen (abbreviation: DBTFLP-IV), and 4,4 ',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DB) F3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl [nyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II) and other furan skeletons Examples of compounds having the above include compounds having an aromatic amine skeleton and Compounds with a basol skeleton are reliable, have high hole transport properties, and are suitable for driving electric currents. This is preferable as it also contributes to pressure reduction. Note that the holes used in the composite material of the hole injection layer 111 The materials listed as having transport properties can also be suitably used as materials constituting the hole transport layer 112. It is possible to be there.

[0089] The light-emitting layer 113 is a layer containing a host material and a light-emitting material. The light-emitting material is a fluorescent substance. Even if it is a phosphorescent material, or a material that exhibits thermally activated delayed fluorescence (TADF) Other light-emitting materials may also be used. Furthermore, the light-emitting layer 113 may be a single layer or different. It may consist of multiple layers containing a light-emitting material.

[0090] In the light-emitting layer 113, examples of fluorescent light-emitting materials that can be used as light-emitting materials include Examples include the following. Other fluorescent materials can also be used. .

[0091] 5,6-Bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyri Zin (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antri [Lu)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N, N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl] )phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bi (3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluorene- 9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) ), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-di Phenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazo (Abbreviated) 4'-(10-phenyl-9-anthryl)triphenylamine ( Name: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-dife Nyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl Nyl-N-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole -3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert- Butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-( 9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAP) A) N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1 -phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine]( Abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2- Anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-to Riphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N ',N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene -2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,1 0-Diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-A Min (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl] )-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N' -Triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10 -Bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis( 1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl) [Nyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N, 9-Triphenylanthracene-9-amine (abbreviation: DPhAPhA), Coumarin 545 T,N,N'-diphenylquinacridone, (abbreviation: DPQd), rubren, 5,12-bi Su(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BP) T), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl- 4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-meth Ru-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidi [-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-Tetrakis(4-methylphenyl)tetracene-5, 11-Diamine (abbreviation: p-mPhTD), 7,14-Diphenyl-N,N,N',N' -Tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,1 0-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1, 1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij ]Quinolysin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitol Lu (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7- Tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidine [-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: D CJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl} -4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2 ,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6 Trahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-p Lan-4-ylidene propanedinitrile (abbreviation: BisDCJ™), N,N'-diph Phenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naph [1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc. These include, in particular, 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6Bn Condensed aromatic diamine compounds, such as pyrendiamine compounds like fAPrn-03 This is preferable because it has high hole-trapping properties and excellent luminescence efficiency and reliability.

[0092] Examples of phosphorescent materials that can be used as light-emitting materials in the light-emitting layer 113 include: For example, the following can be cited.

[0093] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H -1,2,4-triazole-3-yl-κN2]phenyl-κC}iridium(III ) (abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4-diphen) Iridium(III) (abbreviation: [Ir(Mpt) z)3]), Tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H -1,2,4-Triazolat] Iridium(III) (Abbreviation: [Ir(iPrptz-3 Organometallic iridium complexes having a 4H-triazole skeleton, such as b)3]), and Tris [3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-tria Zolato] Iridium (III) (abbreviation: [Ir(Mptz1-mp)3]), Tris (1 -Methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III) (Abbreviation: [Ir(Prptz1-Me)3]) 1H-triazole bone iridium organometallic complexes with a specific property, and fac-tris[1-(2,6-diisopropyl [Phenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir (iPrpmi)3]), Tris[3-(2,6-dimethylphenyl)-7-methylimi Dazo[1,2-f]phenantriginato]iridium(III) (abbreviation:[Ir(dmp Organometallic iridium complexes having an imidazole skeleton such as impt-Me)3]), Bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ ]iridium( III) Tetrakis(1 - pyrazolyl)borate (abbreviation: FIr6), bis[2-(4', ,6'-difluorophenyl)pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)f enyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir( CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyr idinato-N,C 2’ iridium(III) acetylacetonate (abbreviation: FIr(ac ac)) and other organometallic iridium complexes having a phenylpyridine derivative with an electron-withdrawing group as a ligand. These are compounds that exhibit blue phosphorescent emission and are compounds having a peak of emission from 440 nm to 520 nm.

[0094] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iri dium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis (6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mp pm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4- phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(ac ac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpy rimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl Pyrimidinato iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) ), bis(4,6-diphenylpyrimidinato)(acetylacetonato)iridium(II I) (abbreviation: [Ir(dppm)2(acac)]) and other organometallic iridium complexes having a pyrimidine skeleton, such as bis(3,5-dimethyl-2-phenyl pyridazinato)(acetylacetonato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac) ), bis(5-isopropyl-3-methyl-2-phenylpyridazinato)(acetylacetonato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac) )]]), and other organometallic iridium complexes having a pyrazine skeleton, such as tris(2-phenylpyridinato-N,C )(acetylacetonato)iridium(III) (abbreviation: [Ir(ppy)3]), bis(2- phenylpyridinato-N,C / )iridium(III) acetylacetonate (abbreviation:[Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(II 2’ II) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris (2-phenylquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir(pq) 3]), bis(2-phenylquinolinato-N,C )iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]) and other organometallic iridium complexes having a pyridine skeleton, and tris(acetylacetonato)(monophenanthroline)ter bium(III) (abbreviation: [Tb(acac)3(Phen)]) and other rare earth metals (2-phenylquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir(pq) 3]), bis(2-phenylquinolinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), and other organometallic iridium complexes having a pyridine skeleton, and tris(acetylacetonato)(monophenanthroline)ter bium(III) (abbreviation: [Tb(acac)3(Phen)]) and other rare earth metals In addition to organometallic iridium complexes having a pyridine skeleton, such as tris(acetylacetonato)(monophenanthroline)ter bium(III) (abbreviation: [Tb(acac)3(Phen)]) and other rare earth metals Examples include complexes. These are compounds that mainly exhibit green phosphorescence, with a wavelength of 500 nm to 6 It has an emission peak at 00 nm. Furthermore, it is an organometallic iridium complex with a pyrimidine skeleton. The body is particularly preferable because it is outstanding in terms of reliability and luminescence efficiency.

[0095] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimid Sodium iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis(Ir(5mdppm)2(dibm)]), [4,6-Bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridi Um(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di( Naphthalene-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) Organometallic gold with a pyrimidine skeleton, such as (abbreviation: [Ir(d1npm)2(dpm)]) Iridium complexes of the genus, and (acetylacetonato)bis(2,3,5-triphenylpyrazine Iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2, 3,5-Triphenylpyrazinate)(dipivaloylmethanato) Iridium(III) (abbreviated) Name: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis (4-Fluorophenyl)quinoxalinato] Iridium(III) (Abbreviation: [Ir(Fd Organometallic iridium complexes having a pyrazine skeleton such as pq)2(acac)]) and RIS(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir (piq)3]), bis(1-phenylisoquinolinato-N,C 2’ Iridium (II) I) Pyridogenated acetylacetonate (abbreviation: [Ir(piq)2(acac)]) In addition to organometallic iridium complexes with a n skeleton, 2, 3, 7, 8, 12, 13, 17, 18 -Octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) Platinum complex and Tris(1,3-diphenyl-1,3-propanedionato)(monophenate Nanthroline europium(III) (abbreviation: [Eu(DBM)3(Phen)]), Tris[1-(2-tenoyl)-3,3,3-trifluoroacetonate](monophenane) Like trolin europium(III) (abbreviation: [Eu(TTA)3(Phen)]) Examples include rare earth metal complexes. These are compounds that exhibit red phosphorescence, and 60 It has an emission peak from 0 nm to 700 nm. Furthermore, it is an organometallic compound with a pyrazine skeleton. The lydium complex yields a red emission with good chromaticity.

[0096] In addition to the phosphorescent compounds described above, known phosphorescent materials may also be selected and used. stomach.

[0097] In the light-emitting layer 113, possible TADF materials include fullerene and its derivatives. Conductors, acridine and its derivatives, eosin derivatives, etc. can be used. Cium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), i Examples include metal-containing porphyrins, such as those containing chlordium (In) or palladium (Pd). The metal-containing porphyrin is, for example, the protoporph shown in the following structural formula. Fluorine-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-fluoride Tin complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (Sn F2 (Hemato IX), coproporphyrin tetramethyl ester - tin fluoride Complex (SnF2(Copro III-4Me)), octaethylporphyrin-fluoride tin complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(E tio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc. can also be cited. be cited.

[0098]

Chemical formula

[0099] Also, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine ([[ID=2|0]] [[ID=2|1]]abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9’-phenyl-9H,9’H-3,3’-bicarbazole (abbreviation: PCCzT[[ID=2|2]] [[ID=2|3]]zn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl[[ID=2|4]] [[ID=2|5]]]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4[[ID=2|6]] [[ID=2|7]]-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-[[ID=2|8]] [[ID=2|9]]diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthene-9-one (abbreviation: ACR[[ID=3|0]] [[ID=3|1]]XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl][[ID=3|2]] [[ID=3|3]]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[a[[ID=3|4]] [[ID=3|5]]acridine-10-yl)-9H-xanthene-9-one (abbreviation: ACR[[ID=3|6]] [[ID=3|7]]XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl][[ID=3|8]] [[ID=3|9]]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[a[[ID=4|0]] [[ID=4|1]]acridine-10-yl)-9H-xanthene-9-one (abbreviation: ACR[[ID=4|2]] [[ID=4|3]]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[a[[ID=4|4]] π electron peroxides such as clidine-9,9'-anthracene]-10'-one (abbreviated as ACRSA) Heterocyclic compounds having either or both a superfluous heteroaromatic ring and a π-electron-deficient heteroaromatic ring are also used. This is possible. The heterocyclic compound is a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring. Because it has a ring, it has high electron transport and hole transport properties, which is desirable. In particular, π electron deficiency Among skeletons having a hetero-type aromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyr) The din skeleton, pyridazine skeleton, and triazine skeleton are preferred because they are stable and reliable. In particular, the benzoflopyrimidine skeleton, the benzothienopyrimidine skeleton, and the benzoflopyrimidine skeleton. The din skeleton and benzothienopyrazine skeleton are preferred because they have high acceptability and good reliability. Furthermore, among skeletons having a π-electron-rich heteroaromatic ring, the acridine skeleton and phenoxa The din skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are safe Because it is stable and reliable, it is preferable to have at least one of the said skeletons. The benzofuran skeleton is used as the cytoskeleton skeleton, and the dibenzothiophene skeleton is used as the thiophene skeleton. However, each is preferable. In addition, as for the pyrrole skeleton, the indole skeleton and the carbazole skeleton are preferred. Indrocarbazole skeleton, bicarbazole skeleton, 3-(9-phenyl-9H-cal The bazole-3-yl)-9H-carbazole skeleton is particularly preferred. A substance in which an organic aromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is a substance in which a π-electron-rich heteroaromatic ring Both electron-donating and electron-accepting properties of the π-electron-deficient heteroaromatic ring become stronger, resulting in S1 and T1 levels. Because the energy difference becomes smaller, thermally activated delayed fluorescence can be obtained efficiently, which is particularly desirable. It seems so. Furthermore, instead of a π-electron-deficient heteroaromatic ring, an electron-withdrawing group such as a cyano group is bonded to it. Aromatic rings may also be used. In addition, aromatic amine skeletons and phena can be used as π-electron-rich skeletons. The din skeleton and the like can be used. In addition, as a π-electron-deficient skeleton, the xanthene skeleton and cyanoacrylate are used. Oxate dioxide skeleton, oxadiazole skeleton, triazole skeleton, imidazo Boron skeletons, anthraquinone skeletons, boron-containing skeletons such as phenylborane and volanthrene, benzo Aromatic rings or heteroaromatic rings having nitrile groups such as nitriles or cyano groups such as cyanobenzene Using carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, etc. This is possible. In this way, π-electron-deficient heteroaromatic rings and π-electron-excess heteroaromatic rings At least one of the π-electron-deficient skeletons and the π-electron-excessive skeleton can be used instead. ru.

[0100] [ka]

[0101] TADF materials are characterized by a small difference between the S1 and T1 levels, and triple intersystem crossing occurs due to reverse intersystem crossing. A function that can convert energy from singlet excitation energy to singlet excitation energy. It is a material that possesses this property. Therefore, the triplet excitation energy is obtained by a small amount of thermal energy. Upconversion to the multiplet excitation energy (reverse intersystem crossing) is possible, and the singlet excited state can be efficiently converted. It can be generated easily. Furthermore, the triplet excitation energy can be converted into luminescence. .

[0102] Furthermore, an excited complex (exciplex) is formed by two different substances forming an excited state. Exciplex (also called 'x' or 'exciplex') is a state where the difference between the S1 level and the T1 level is extremely small. As a TADF material capable of converting triplet excitation energy to singlet excitation energy, It has the function of being functional.

[0103] Furthermore, the phosphorescence spectrum observed at low temperatures (e.g., 77K to 10K) can be used as an indicator of the T1 level. A cull can be used. As for TADF materials, the short-wavelength tail of its fluorescence spectrum is Draw a tangent line, and define the S1 level as the wavelength energy at the point where the extrapolation line intersects the X-axis. Draw a tangent line at the short-wavelength tail of the light spectrum, and the energy of the extrapolation line at the wavelength is T1. When considering the energy levels, it is preferable that the difference between S1 and T1 is 0.3eV or less, and 0.2e It is even more preferable that it be V or less.

[0104] Furthermore, when using TADF material as the luminescence center material, the S1 level of the host material is TADF. It is preferable that the S1 level of the material is higher than the T level of the host material. Also, the T1 level of the host material is higher than the T level of the TADF material. It is preferable that the level is higher than level 1.

[0105] The host material for the light-emitting layer may be an electron-transporting material or a hole-transporting material, or the above Various carrier transport materials, such as TADF materials, can be used.

[0106] As a material having hole transport properties, the material having hole transport properties included in the hole transport layer 112 The materials listed can be suitably used, but in particular, materials having an aromatic amine skeleton are suitable. Being an organic compound is preferable because it exhibits high hole transport properties and good stability. Among organic compounds having an aromatic amine skeleton, the triarylamine skeleton or carba It is preferable that the skeleton be zole or both.

[0107] Furthermore, the hole transport material is the triarylamine skeleton and carbazole skeleton mentioned above. If the organic compound has both skeletons, the nitrogen in the triarylamine skeleton The atom and the carbazole skeleton are linked via a phenylene group, making it an organic compound. It is preferable because it is stable and reliable. Furthermore, materials that similarly possess hole transport properties are also preferable. It was an organic compound that had both a lyarylamine skeleton and a carbazole skeleton. In this case, the carbazole skeleton is bonded to the amine at positions 2 through 4 or 9. This is preferable from a reliability standpoint.

[0108] Furthermore, if the material having hole transport properties is an organic compound having a carbazole skeleton, Being an organic compound with a bicarbazole skeleton results in good hole transport properties and high stability. Therefore, it is preferable. In this case, the bicarbazole skeleton has 2 at any of the positions 2 to 4. It is preferable that the structure consists of two carbazolyl groups bonded to each other.

[0109] Examples of hole-transporting materials having such a structure include the following: It is possible.

[0110] [ka]

[0111] Examples of materials with electron transport properties include bis(10-hydroxybenzo[h]quinoli Sodium beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolate) )(4-phenylphenolate)aluminum(III) (abbreviation: BAlq), bis(8- Zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl) [Phenolate]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl) Metal complexes such as phenolate zinc(II) (abbreviation: ZnBTZ) and 2-(4-biphenyl Ryl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation) :PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butyl) Enyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-te rt-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl) Phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5 -Benzenetriyl)tris(1-phenyl-1H-benzoimidazole) (abbreviation: TP) BI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H -Polyazole skeletons such as benzimidazole (abbreviation: mDBTBIm-II) Heterocyclic compounds, and 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f ,h]Quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothio [fen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2 mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)bipheni [Lu-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6 -Bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn) P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation) Heterocyclic compounds having a diazine skeleton, such as 4,6 mDBTP2Pm-II, and 3,5 -Bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCz) PPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmP) Examples include heterocyclic compounds having a pyridine skeleton, such as yPB. Among those mentioned above, dia Heterocyclic compounds with a din skeleton or a pyridine skeleton are highly reliable. Yes, it is preferable. In particular, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton are It has high electron transport properties and contributes to reducing the drive voltage.

[0112] Furthermore, as materials possessing electron transport properties, there are benzophrodiazine skeletons or benzothiodia Organic compounds having a din skeleton are particularly preferred, and among them, organic compounds represented by the following general formula (G1) Compounds are preferred.

[0113] [ka]

[0114] In the above general formula (G1), Q represents oxygen or sulfur. Also, Ar 1 is, substitute or It shows an unsubstituted condensed aromatic ring. Also, R 1 and R 2 One is hydrogen, the other is hole transport. This represents a group with a total of 1 to 100 carbon atoms having the following skeleton. As a hole-transporting skeleton, pyrrole π-electron-rich heteroaromatic ring skeletons such as furan skeletons, thiophene skeletons, and carbazole skeletons. Examples include condensed aromatic hydrocarbon ring skeletons and aromatic amine skeletons.

[0115] Furthermore, organic compounds represented by the following structural formula (100) are particularly preferred.

[0116] [ka]

[0117] Furthermore, as materials with electron transport properties, benzoflopyrimidine skeletons or benzothiop Organic compounds having a limidine skeleton are also preferred, and among them are those represented by the following general formula (G2) Organic compounds are preferred.

[0118] [ka]

[0119] In the formula, Q represents oxygen or sulfur. 1 Ar 2 Ar 3 , and Ar 4 Each is a German The vertical axis represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituents of the aromatic hydrocarbon ring are , an alkyl group having 1 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms, or a group having 5 carbon atoms Monocyclic saturated hydrocarbon groups having 7 to 7 carbon atoms, or polycyclic saturated hydrocarbon groups having 7 to 10 carbon atoms, is any one of the cyano groups, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 to 25. Below. Also, m and n are 0 or 1, respectively. Also, A has a total of 12 or more carbon atoms. It has 100 groups, and also includes benzene rings, naphthalene rings, fluorene rings, and phenanthrene rings. , a heteroaromatic ring containing a triphenylene ring, a dibenzothiophene ring, and a dibenzofuran ring Hetero-aromatic rings, hetero-aromatic rings including carbazole rings, benzimidazole rings, triphenyl It has one or more of the MIN structures. Also, R 1 It is hydrogen, aluminum with 1 to 6 carbon atoms. Kill group, substituted or unsubstituted monocyclic saturated hydrocarbons having 5 to 7 carbon atoms, substituted or unsubstituted. Substituted polycyclic saturated hydrocarbons with 7 to 10 carbon atoms, substituted or unsubstituted hydrocarbons with 6 to 13 carbon atoms This represents an aryl group, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms. In addition, it is preferable that m and n are 0 in the above general formula (G2).

[0120] Benzophrodia, as described above, is a suitable material for use as an electron transport material. Organic compounds having a din skeleton or a benzothiodiazine skeleton or benzophropyrimid Examples of organic compounds having a benzothiopyrimidine skeleton include the following: One example is eel.

[0121] [ka]

[0122] Furthermore, among the organic compounds mentioned above, those represented by the following structural formulas (200) or (201) are particularly noteworthy. Organic compounds that can be used are preferred.

[0123] [ka]

[0124] When using fluorescent materials as light-emitting materials, the host material should have an anthracene skeleton. Materials that are suitable for this purpose are used as host materials for fluorescent materials. When used in this way, it is possible to realize a light-emitting layer with good luminous efficiency and durability. Since many materials having a sen skeleton have deep HOMO levels, one aspect of the present invention is suitably applied. It is possible. As for materials having an anthracene skeleton to be used as a host material, A substance having a phenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton It is preferable because it is chemically stable. Also, if the host material has a carbazole skeleton, This is preferable because it improves hole injection and transport, but the benzene ring is further condensed on the carbazole. When it contains a benzocarbazole skeleton, the HOMO is approximately 0.1 eV shallower than that of carbazole. This is preferable because it makes it easier for holes to enter. In particular, if the host material is dibenzocarbazo When a carbazole skeleton is present, the HOMO becomes about 0.1 eV shallower than that of carbazole, and holes are inserted. It is preferable because it becomes easier to transport holes, has excellent hole transport properties, and has high heat resistance. Furthermore, preferred host materials include a 9,10-diphenylanthracene skeleton and The carbazole skeleton (or benzocarbazole skeleton or dibenzocarbazole skeleton) It is a substance that sometimes possesses this property. Furthermore, from the viewpoint of the hole injection and transport properties mentioned above, the carbazole skeleton is Alternatively, a benzofluorene skeleton or a dibenzofluorene skeleton may be used. An example of quality is 9-phenyl-3-[4-(10-phenyl-9-antryl)phenyl [Lu]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)-pheny [L]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl] [nyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7- [4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]cal Bazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-ant) [Lyl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA) ), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)bife Examples include ny-4'-ylanthracene (abbreviated as FLPPA). In particular, CzPA cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good characteristics, therefore, That was a good choice.

[0125] Furthermore, the host material may be a mixture of multiple substances, and the mixed host material When used, a mixture of electron-transporting material and hole-transporting material is used. Preferably, by mixing an electron-transporting material with a hole-transporting material. Furthermore, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can be easily controlled. This is possible. The ratio of the content of hole-transporting material to electron-transporting material is the ratio of hole-transporting material content. The ratio of electron-transporting material to electron-transporting material should be 1:9 to 9:1.

[0126] Furthermore, these mixed materials may form excited complexes. These excited complexes are luminescent materials. It forms an excited complex that emits light that overlaps with the wavelength of the lowest energy absorption band. By selecting the right combination, energy transfer becomes smoother, and luminescence is obtained more efficiently. This is preferable because it allows for a reduction in the drive voltage.

[0127] Since the light-emitting layer 113 often has a configuration in which multiple materials exist in the same layer, when it is manufactured... A composition for EL devices according to one aspect of the present invention can be suitably used. The EL device composition contains two or more materials from the list above, The 5% weight loss temperature between organic compounds, as measured by thermogravimetric analysis under pressures of 0.1 Pa or less. The EL is obtained by selecting and mixing in any proportion such that the degree difference is 50 degrees or less. The composition for the vise does not significantly affect the composition of the composition itself or the composition of the deposited film, even when continuous deposition is performed. Such changes are unlikely to occur. Therefore, EL devices manufactured using this EL device composition The vice can be used to create an EL device that exhibits good and stable characteristics.

[0128] Furthermore, it becomes possible to deposit multiple organic compounds using a single deposition source, thus eliminating excess or additional waste. It is possible to manufacture EL devices with good characteristics without making additional capital investments. Therefore, EL devices with good characteristics can be manufactured inexpensively.

[0129] The electron transport layer 114 is a layer containing a substance that has electron transport properties. As examples, the above-mentioned materials are electron-transporting substances that can be used as host materials. You can use this.

[0130] Between the electron transport layer 114 and the cathode 102, an electron injection layer 115 is provided, containing lithium fluoride (L Alkali such as iF, cesium fluoride (CsF), calcium fluoride (CaF2), etc. A layer containing a metal, an alkaline earth metal, or a compound thereof may be provided. Electron injection layer 11 5 is a layer made of an electron-transporting material containing alkali metals or alkaline earth metals or so Products containing these compounds or electrides may also be used. For example, a substance obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. It can be listed.

[0131] Furthermore, the electron injection layer 115 is made of a substance having electron transport properties (preferably a bipyridine skeleton). (An organic compound containing) the above alkali metal or alkaline earth metal fluoride in a microcrystalline state It is also possible to use a layer containing a concentration of 50 wt% or more. This layer is refraction Because it is a low-rate layer, it is possible to provide an EL device with better external quantum efficiency. It becomes Noh.

[0132] Alternatively, a charge generation layer 116 may be provided instead of the electron injection layer 115 (Figure 1B). The bio-layer 116 injects holes into the cathode and electrons into the layer adjacent to the anode when an electric potential is applied. This refers to a layer that can generate electricity. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is listed as a material that can constitute the hole injection layer 111 described above. It is preferable to form it using a composite material. Furthermore, the P-type layer 117 constitutes the composite material. The material is constructed by laminating a film containing the acceptor material described above and a film containing the hole transport material. It is permissible to do so. By applying an electric potential to the P-type layer 117, electrons are directed to the electron transport layer 114. A hole is injected into pole 102, and the EL device operates.

[0133] In addition to the P-type layer 117, the charge generation layer 116 also includes an electron relay layer 118 and an electron injection buffer. It is preferable that one or both of the layers 119 are provided.

[0134] The electron relay layer 118 contains at least an electron-transporting material, and the electron injection buffer layer 1 It has the function of preventing interaction between 19 and the P-type layer 117, thereby enabling smooth electron transfer. The LUMO level of the electron-transporting material contained in the relay layer 118 is in the P-type layer 117. The LUMO level of a material having electron-accepting properties, and the charge generation layer 1 in the electron transport layer 114 It is preferable that this is between the LUMO level of the material contained in the layer in contact with 16. Electron relay The specific LUMO level of the electron-transporting material used in layer 118 is -5.0 The voltage should be above eV, preferably between -5.0eV and -3.0eV. - The electron-transporting material used in layer 118 is a phthalocyanine-based material or gold It is preferable to use a metal complex having a genus-oxygen bond and an aromatic ligand.

[0135] The electron injection buffer layer 119 contains alkali metals, alkaline earth metals, rare earth metals, and These compounds (alkali metal compounds (oxides such as lithium oxide, halides, and carbonates) (including carbonates such as thium and cesium carbonate), alkaline earth metal compounds (oxides, halogens) Compounds of rare earth metals (including oxides, halides, and carbonates), or compounds of rare earth metals (including oxides, halides, and carbonates) It is possible to use materials with high electron injection capabilities, such as (m)).

[0136] Furthermore, the electron injection buffer layer 119 contains an electron transporting substance and a donor substance, and If performed, alkali metals, alkaline earth metals, and rare earth metals will be used as donor substances. , and these compounds (alkali metal compounds (oxides and halides such as lithium oxide) , including carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (oxides, (including halides and carbonates), or compounds of rare earth metals (oxides, halides, carbon In addition to salts, tetratianaphthacene (abbreviated as TTN), nickerosene, decametine Organic compounds such as runicerosene can also be used. Therefore, it is formed using the same material as the material that constitutes the electron transport layer 114 described earlier. It is possible.

[0137] The material used to form cathode 102 is gold, which has a small work function (specifically, less than 3.8 eV). Materials, alloys, electrically conductive compounds, and mixtures thereof can be used. Specific examples of cathode materials include alkali metals such as lithium (Li) and cesium (Cs). , and elements such as magnesium (Mg), calcium (Ca), and strontium (Sr). Elements belonging to Group 1 or Group 2 of the periodic table, and alloys containing them (MgAg, AlL i) Rare earth metals such as europium (Eu) and ytterbium (Yb), and those containing these Examples include alloys. However, between the cathode 102 and the electron transport layer 114, electron injection By adding an interlayer, regardless of the magnitude of the work function, Al, Ag, ITO, silicon, etc. Various conductive materials such as indium oxide-tin oxide containing silicon oxide are used as cathode 102. These conductive materials can be used in a dry process such as vacuum deposition or sputtering. It is possible to deposit films using methods such as formula deposition, inkjet printing, and spin coating. It may be formed by a wet process using the sol-gel method, or by a wet process using a paste of a metallic material. It may be formed.

[0138] Furthermore, various methods can be used to form the EL layer 103, regardless of whether they are dry or wet methods. This can be done using methods such as vacuum deposition, gravure printing, offset printing, and screen printing. You may use methods such as printing, inkjet, or spin coating. Furthermore, vapor deposition is also an option. When multiple substances are present in a single layer, the EL device composition according to one embodiment of the present invention By using this method, it becomes possible to manufacture EL devices with good and stable characteristics. Furthermore, it is cost-effective as it reduces the need for increased capital investment and maintenance.

[0139] Furthermore, each electrode or layer described above may be formed using different film deposition methods.

[0140] The configuration of the layer provided between the anode 101 and the cathode 102 is not limited to the above. No. However, the proximity of the light-emitting region to the metal used in the electrodes and carrier injection layer can lead to... To suppress the resulting quenching, holes are placed in a location away from the anode 101 and cathode 102. A configuration in which a light-emitting region is provided where electrons and other elements recombine is preferable.

[0141] Furthermore, the hole transport layer and electron transport layer in contact with the light-emitting layer 113, and especially the recombination in the light-emitting layer 113, The carrier transport layer near the region suppresses energy transfer from excitons generated in the light-emitting layer. Therefore, the luminescent material constituting the luminescent layer or the luminescent material contained in the luminescent layer has bandgum It is preferable to use a material with a band gap larger than the cap.

[0142] Next, we have an EL device (stacked device, tandem) with a configuration in which multiple light-emitting units are stacked. The form of the EL device (also called a type device) will be explained with reference to Figure 1C. This EL device It is an EL device having multiple light-emitting units between the anode and the cathode. The knit has a structure almost identical to the EL layer 103 shown in Figure 1A. That is, as shown in Figure 1C. The EL device is an EL device having multiple light-emitting units, as shown in Figure 1A or Figure 1B. The EL device shown is an EL device having one light-emitting unit. Cut.

[0143] In Figure 1C, between the anode 501 and the cathode 502 are the first light-emitting unit 511 and the second The light-emitting units 512 are stacked, and the first light-emitting unit 511 and the second light-emitting unit A charge generation layer 513 is provided between the anode 501 and cathode 502. These correspond to the anode 101 and cathode 102 in Figure 1A, and are the same as those described in the explanation of Figure 1A. It can be applied to the first light-emitting unit 511 and the second light-emitting unit 5 12 may have the same configuration or a different configuration.

[0144] When a voltage is applied to the anode 501 and cathode 502, the charge generation layer 513 generates a light from one of the light-emitting units. It has the function of injecting electrons into one unit and holes into the other light-emitting unit. That is, Figure In 1C, if a voltage is applied such that the potential of the anode is higher than the potential of the cathode, The charge generation layer 513 injects electrons into the first light-emitting unit 511, and the second light-emitting unit 5 Any method that injects a hole into 12 will suffice.

[0145] The charge generation layer 513 is formed with the same configuration as the charge generation layer 116 described in Figure 1B. Preferably, composite materials of organic compounds and metal oxides have good carrier implantation and carrier transport properties. Because of its superior performance, it can achieve low-voltage and low-current operation. If the anode side of the unit is in contact with the charge generation layer 513, the charge generation layer 513 is the light-emitting unit Since it can also serve as a hole injection layer, the light-emitting unit does not need to have a hole injection layer. good.

[0146] Furthermore, if an electron injection buffer layer 119 is provided in the charge generation layer 513, the electron injection buffer Since layer 119 plays the role of an electron injection layer in the anode-side light-emitting unit, the anode-side light emission The unit does not necessarily need to have an electron injection layer.

[0147] Figure 1C illustrates an EL device with two light-emitting units, but it can also describe a device with three or more units. The same configuration can also be applied to EL devices that have stacked light-emitting units. This is the case. The EL device according to this embodiment has multiple light-emitting units between a pair of electrodes. By separating and arranging them with a charge generation layer 513, high-brightness light emission is achieved while maintaining a low current density. This enables the realization of EL devices with even longer lifespans. Furthermore, it allows for low-voltage operation and consumes less power. This makes it possible to create a light-emitting device with low power consumption.

[0148] Furthermore, by making the light-emitting color of each light-emitting unit different, the entire EL device... This allows you to obtain light emission of the desired color. For example, an EL display having two light-emitting units. In the vise, the first light-emitting unit emits red and green light, and the second light-emitting unit emits blue light. By obtaining color, it is also possible to obtain an EL device that emits white light as a whole. be.

[0149] (Embodiment 3) This embodiment describes a light-emitting device using the EL device described in Embodiment 2. ru.

[0150] In this embodiment, the light-emitting device is made using the EL device described in Embodiment 2. Let's explain using Figure 2. Figure 2A is a top view showing the light-emitting device, and Figure 2B is a modified version of Figure 2A. This is a cross-sectional view taken at points A and B and CD. This light-emitting device controls the light emission of the EL device. The components controlled are the drive circuit section (source line drive circuit) 601 and the pixel section 60, indicated by the dotted line. 2. Includes a drive circuit section (gate line drive circuit) 603. Also, 604 is a sealing substrate, 6 05 is a sealing material, and the area enclosed by the sealing material 605 is a space 607.

[0151] The routing wire 608 is input to the source line drive circuit 601 and the gate line drive circuit 603. FPC (Flexible Printed Circuit) is a wiring system for transmitting signals and serves as an external input terminal. (Input circuit) 609 receives video signals, clock signals, start signals, reset signals, etc. Receive. Note that only the FPC is shown in the diagram here, but this FPC has a print distribution A wire substrate (PWB) may be attached. The light-emitting device in this specification is a light-emitting device This includes not only the main unit but also the state in which the FPC or PWB is attached to it. ru.

[0152] Next, the cross-sectional structure will be explained using Figure 2B. The drive circuit section and A pixel section is formed, and here, the source line drive circuit 601, which is the drive circuit section, and the pixel One pixel in element 602 is shown.

[0153] The element substrate 610 is a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, etc. FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fiber) Made using a plastic substrate made of fluoride, polyester, or acrylic resin. Just make it.

[0154] The structure of transistors used in pixels and driving circuits is not particularly limited. For example, inverse staggered It can be a type of transistor or a staggered transistor. Also, top Either a gate-type transistor or a bottom-gate transistor is acceptable. The semiconductor material is not particularly limited, and examples include silicon, germanium, silicon carbide, nitride Gallium can be used, or an In-Ga-Zn metal oxide can be used. An oxide semiconductor containing at least one of the elements, such as zinc, gallium, and zinc, may also be used.

[0155] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors, Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a crystalline region in part) Any semiconductor having the properties of [the semiconductor material] may be used. If a semiconductor having crystalline properties is used, transients may occur. This is preferable because it suppresses the deterioration of the stanic characteristics.

[0156] Here, in addition to the transistors provided in the pixels and driving circuits mentioned above, the touch sensors and the like described later are also included. It is preferable to use oxide semiconductors for semiconductor devices such as transistors. It is particularly preferable to use oxide semiconductors with a wider band gap than silicon. By using an oxide semiconductor with a wider band gap than Ricon, the off state of the transistor can be controlled. The current in this state can be reduced.

[0157] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). It is also In-M-Zn oxides (where M is Al, Ti, Ga, Ge, Y, Zr, Sn, It is an oxide semiconductor containing an oxide (such as a metal like La, Ce, or Hf). It is preferable.

[0158] Herein, an oxide semiconductor that can be used in one aspect of the present invention will be described below. .

[0159] Oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (c-axis ali gned crystalline oxide semiconductor), polycrystalline crystalline oxide semiconductor, nc-OS (nano crystalline oxide sem iconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorph (Amorphous-like oxide semiconductor), and amorphous oxide semiconductor It contains conductors, etc.

[0160] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. Furthermore, it has a distorted crystal structure. Note that distortion refers to the region where multiple nanocrystals are connected. Within the region, between a region with aligned lattice arrangements and another region with aligned lattice arrangements, This refers to the part where the direction has changed.

[0161] Nanocrystals are based on a hexagonal structure, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. Yes, it exists. Furthermore, the distortion may have lattice arrangements such as pentagons and heptagons. Furthermore, in CAAC-OS, even near strain, clear grain boundaries (grain bounds) are present. It is difficult to confirm (also called Dally) the crystal grains. In other words, due to the distortion of the lattice arrangement, It can be seen that the formation of the boundary is suppressed. This is because CAAC-OS is in the ab-plane direction. The oxygen atoms are not densely arranged, and the substitution of metal elements reduces the bond distance between atoms. This is because distortion can be tolerated through changes and other processes.

[0162] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and elements A layered crystalline structure in which layers containing M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a layered structure (also called a structure). Furthermore, indium and element M are substituted for each other. It is possible, and if element M in the (M,Zn) layer is replaced with indium, then (In,M,Zn) It can also be represented as a layer. Furthermore, if the indium in the In layer is substituted with element M, then (In,M It can also be represented as a layer.

[0163] CAAC-OS is a highly crystalline oxide semiconductor. On the other hand, CAAC-OS has a clear bond. Because it is difficult to confirm grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that... Furthermore, the crystallinity of oxide semiconductors decreases due to the inclusion of impurities and the generation of defects. Because this can occur, CAAC-OS may contain impurities or defects (oxygen deficiencies (V O :oxygen It can also be described as an oxide semiconductor with low vacancy (also called CAA). Therefore, CAA Oxide semiconductors containing C-OS exhibit stable physical properties. Therefore, CAAC-OS The oxide semiconductors it possesses are highly heat-resistant and reliable.

[0164] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially between 1 nm and 3 nm). It has periodicity in the atomic arrangement in the region of less than nm. Furthermore, nc-OS has different nanometers. No regularity in crystal orientation is observed between crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analysis method, nc-OS can be classified as a-like OS or amorphous oxide semiconductor. It can sometimes be difficult to distinguish between them.

[0165] Furthermore, indium is a type of oxide semiconductor containing indium, gallium, and zinc. Um-gallium-zinc oxide (hereinafter referred to as IGZO) is stable when formed into the nanocrystals described above. It may take on a structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Smaller crystals (for example) are preferable to larger crystals (here, crystals of a few millimeters or a few centimeters). In some cases, using the aforementioned nanocrystal structure may result in greater structural stability.

[0166] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. It is a conductor. a-like OS has porous or low-density regions. That is, a-li ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0167] Oxide semiconductors can take on diverse structures, each possessing different properties. The acid described here Iridescent semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and nc- It may have two or more types of OS and CAAC-OS.

[0168] In addition to the oxide semiconductors mentioned above, CAC (Cloud-Aligned Comp You may also use osite)-OS.

[0169] CAC-OS possesses both conductive and insulating properties in parts of its material. The material as a whole has semiconductor properties. Furthermore, CAC-OS is used in transistors. When used in semiconductor layers, the conductive function is to allow electrons (or holes) that act as carriers to flow. The insulating function is the function of preventing the flow of electrons, which act as carriers. By having the insulating function and the switching function work complementaryly, the switching function (O The function to turn on / off can be added to CAC-OS. By separating each function, it is possible to maximize the performance of both.

[0170] Furthermore, CAC-OS has conductive regions and insulating regions. The conductive region is the conductive region described above. It has electrical properties, and the insulating region has the aforementioned insulating properties. Furthermore, in the material In some cases, the conductive region and the insulating region are separated at the nanoparticle level. The electrically conductive region and the insulating region may be unevenly distributed within the material. In some cases, the surrounding area may appear blurred and connected in a cloud-like manner.

[0171] Furthermore, in CAC-OS, the conductive region and the insulating region are each 0.5 nm or greater. In the case where particles are dispersed in the material with a size of 10 nm or less, preferably 0.5 nm to 3 nm. There is a match.

[0172] Furthermore, CAC-OS is composed of components with different band gaps. For example, CAC-OS consists of a component with a wide gap due to the insulating region and a component that occurs in the conductive region. It is composed of a component having a narrow gap due to and . In this configuration, the carrier When flowing, the carrier mainly flows in the component with a narrow gap. Components with gaps act complementaryly with components with wide gaps, and narrow gaps In conjunction with the component having a gap, the carrier also flows to the component having a wide gap. When the above CAC-OS is used in the channel formation region of a transistor, the transistor In the ON state, a high current driving force, i.e., a large ON current and high field effect mobility are obtained. It is possible.

[0173] In other words, CAC-OS is a matrix composite. , or metal matrix composite and It can also be referred to as such.

[0174] By using the aforementioned oxide semiconductor material as the semiconductor layer, fluctuations in electrical properties are suppressed, and reliability This enables the creation of highly reliable transistors.

[0175] Furthermore, due to its low off-current, the transistor having the aforementioned semiconductor layer can be used to... This makes it possible to retain the charge stored in the capacity over a long period of time. By applying a generator to each pixel, the gradation of the image displayed in each display area is maintained while driving It also becomes possible to shut down the circuit. As a result, it is possible to realize electronic devices with extremely reduced power consumption. It can be expressed.

[0176] It is preferable to provide an undercoat to stabilize the characteristics of the transistor. The undercoat may be: Inorganic silicon oxide films, silicon nitride films, silicon oxide-nitride films, silicon nitride-oxide films, etc. It can be fabricated using an insulating film, either as a single layer or in a multilayer configuration. The underlayer is fabricated by sputtering. CVD (Chemical Vapor Deposition) method (Plasma CVD method) , thermal CVD method, MOCVD (Metal Organic CVD) method, ALD ( Formed using methods such as Atomic Layer Deposition, coating, and printing. Yes, it is possible. However, a base coat does not need to be applied unless necessary.

[0177] Note that FET623 is one of the transistors formed in the drive circuit section 601. Furthermore, the drive circuit is formed using various CMOS, PMOS, or NMOS circuits. This is sufficient. Furthermore, this embodiment shows a driver-integrated type in which the drive circuit is formed on the substrate. However, this is not always necessary, and the drive circuit can be formed externally rather than on the circuit board. .

[0178] Furthermore, the pixel section 602 includes a switching FET 611 and a current control FET 612 and its drive It is formed by multiple pixels, including an anode 613 electrically connected to the rain, The pixel section may also be a combination of three or more FETs and a capacitive element.

[0179] Furthermore, an insulator 614 is formed covering the end of the anode 613. Here, a positive type sensor It can be formed by using a photocatalytic acrylic resin film.

[0180] Furthermore, in order to ensure good coverage of the EL layer and other layers formed later, the upper end of the insulator 614 is Alternatively, a curved surface with curvature is formed at the lower end. For example, the material of the insulator 614 and When a positive-type photosensitive acrylic resin is used, the radius of curvature is only at the upper end of the insulator 614. It is preferable to have a curved surface having a thickness of 0.2 μm to 3 μm. Also, the insulating material 614 is used. Therefore, either a negative-type or positive-type photosensitive resin can be used.

[0181] An EL layer 616 and a cathode 617 are formed on the anode 613, respectively. For the anode 613, which functions as the anode, a material with a high work function is used. This is desirable. For example, an ITO film, or an indium tin oxide film containing silicon, 2 Indium oxide film containing ~20 wt% zinc oxide, titanium nitride film, chromium film, tungsten In addition to single-layer films such as zinc films, Zn films, and Pt films, there are also films mainly composed of titanium nitride and aluminum. Lamination, a three-layer structure consisting of a titanium nitride film, a film mainly composed of aluminum, and another titanium nitride film, etc. This can be used. Furthermore, a laminated structure results in low resistance as wiring and good audio It can achieve mixed contact and also function as an anode.

[0182] Furthermore, the EL layer 616 was coated using a vapor deposition method with a vapor deposition mask, an inkjet method, and a spin coating method. It is formed by various methods such as those described in Embodiment 2. The EL layer 616 is formed by the structure described in Embodiment 2. It contains the following: In addition, other materials constituting the EL layer 616 include low molecular weight compounds, This may be a high-molecular-weight compound (including oligomers and dendrimers).

[0183] Furthermore, as a material used for the cathode 617 formed on the EL layer 616 and functioning as a cathode, Materials with a low work function (Al, Mg, Li, Ca, or alloys and compounds of these (M It is preferable to use gAg, MgIn, AlLi, etc. Note that in the EL layer 616 If the light passes through cathode 617, then cathode 617 is a thin metal film. And, a transparent conductive film (ITO, indium oxide containing 2-20 wt% zinc oxide, silicon-containing It is preferable to use a laminate with indium tin oxide, zinc oxide (ZnO), etc.

[0184] The EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The element is made up of multiple EL devices, but in the light-emitting device of this embodiment This includes both the EL device described in Embodiment 2 and EL devices having other configurations. It's okay if they're mixed together.

[0185] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, The space 607 surrounded by the sub-substrate 610, the sealing substrate 604, and the sealing material 605 contains the EL device The structure is equipped with chair 618. Furthermore, the space 607 is filled with filler material. In addition to cases where inert gases (such as nitrogen or argon) are used for filling, there are also cases where sealing materials are used for filling. There are also cases where a recess is formed in the sealing substrate and a desiccant is placed there to prevent deterioration due to moisture. This configuration is preferable because it can suppress [the problem].

[0186] Furthermore, it is preferable to use epoxy resin or glass frit for the sealing material 605. These materials should ideally be as impermeable to moisture and oxygen as possible. In addition to glass substrates and quartz substrates, other materials can be used for the encapsulating substrate 604, such as FRP (Fiber Reinforced Plastic). reinforced plastics, PVF (polyvinyl fluoride), polyester A plastic substrate made of tel or acrylic resin can be used.

[0187] Although not shown in Figure 2, a protective film may be provided on the cathode. The protective film may be an organic resin film or an inorganic film. It can be formed with an insulating film. Also, a protective film can be made to cover the exposed portion of the sealing material 605. It may be formed. Also, the protective film may be on the surface and sides of the pair of substrates, a sealing layer, an insulating layer, It can be installed to cover exposed sides such as those shown.

[0188] The protective film can be made of a material that is impermeable to impurities such as water. This effectively suppresses the diffusion of impurities such as these from the outside to the inside.

[0189] Materials that make up the protective film include oxides, nitrides, fluorides, sulfides, ternary compounds, and metals. Alternatively, polymers can be used, for example, aluminum oxide, hafnium oxide, etc. Phenium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide Titanium dioxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide cerium oxide, scandium oxide, erbium oxide, vanadium oxide, or indi oxide Materials containing um, etc., as well as aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, nitrogen Includes titanium dioxide, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride, etc. Materials, nitrides containing titanium and aluminum, oxides containing titanium and aluminum oxides containing aluminum and zinc, sulfides containing manganese and zinc, cerium oxides Strontium-containing sulfides, erbium and aluminum-containing oxides, and Materials containing oxides, etc., including lium and zirconium can be used.

[0190] The protective film can be formed using a film deposition method that provides good step coverage. This is preferable. One such method is atomic layer deposition (ALD). There is a deposition method. Protecting materials that can be formed using the ALD method. It is preferable to use it for membranes. By using the ALD method, a dense membrane can be created with cracks and pinholes. A protective film can be formed with reduced defects or with a uniform thickness. Also, This reduces the damage inflicted on the processed material when forming a protective film.

[0191] For example, by forming a protective film using the ALD method, surfaces with complex uneven shapes, or taps can be formed. A uniform and low-defect protective film can be formed on the top, sides, and back surfaces of the panel. .

[0192] As described above, a light-emitting device fabricated using the EL device described in Embodiment 2 is obtained. It is possible.

[0193] The light-emitting device in this embodiment uses the EL device described in Embodiment 2. This makes it possible to obtain a light-emitting device with good characteristics. Specifically, the method described in Embodiment 2. Because EL devices have good luminous efficiency, it is possible to create light-emitting devices with low power consumption. ru.

[0194] Figure 3 shows an EL device that emits white light, with a colored layer (color filter) and the like. This shows an example of a light-emitting device that has been made full-color. Figure 3A shows substrate 1001 and underlying insulation. Film 1002, gate insulating film 1003, gate electrodes 1006, 1007, 1008, first Interlayer insulating film 1020, second interlayer insulating film 1021, peripheral portion 1042, pixel portion 1040, drive Dynamic circuit section 1041, EL device anodes 1024W, 1024R, 1024G, 1024 B, partition wall 1025, EL layer 1028, cathode 1029 of EL device, sealing substrate 1031, The sealing material 1032 and other components are shown in the illustration.

[0195] Furthermore, Figure 3A shows the colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer The color layer 1034B is provided on the transparent substrate 1033. Also, the black matrix 103 A 5 may be provided. A transparent substrate 103 having a colored layer and a black matrix. 3 is aligned and fixed to the substrate 1001. Note that the colored layer and black matrix 1035 is covered with an overcoat layer 1036. Also, in Figure 3A, light A light-emitting layer that does not pass through the colored layer and emits light to the outside, and a light-emitting layer that passes through the colored layer of each color and emits light to the outside. There are layers, and light that does not pass through the colored layer is white, while light that passes through the colored layer is red, green, and blue. Furthermore, images can be represented using four colored pixels.

[0196] Figure 3B shows the colored layers (red colored layer 1034R, green colored layer 1034G, blue colored layer 1 An example is shown in which 034B) is formed between the gate insulating film 1003 and the first interlayer insulating film 1020. Thus, the colored layer may be provided between the substrate 1001 and the sealing substrate 1031. stomach.

[0197] Furthermore, in the light-emitting device described above, light is taken to the substrate 1001 side on which the FET is formed. Although a light-emitting device with a bottom-emission structure was used, the light emission was taken from the sealing substrate 1031 side. It can also be used as a light-emitting device with a projection structure (top emission type). A cross-sectional view of the light-emitting device is shown in Figure 4. In this case, the substrate 1001 is a substrate that does not transmit light. This can be done. Until the connecting electrode that connects the FET and the anode of the EL device is fabricated, the bottle It is formed in the same way as a muemission-type light-emitting device. Then, the third interlayer insulating film 1037 is electrically... It is formed covering pole 1022. This insulating film may also play a planarization role. Third layer The interlayer insulating film 1037 is formed using the same material as the second interlayer insulating film, as well as other known materials. It is possible.

[0198] The anodes 1024W, 1024R, 1024G, and 1024B of the EL device are referred to here as anodes. However, it can also be a cathode. Also, a top-emission type light-emitting device as shown in Figure 4. In this case, it is preferable to use the anode as the reflective electrode. The configuration of the EL layer 1028 is in the form In state 2, the EL layer 103 has the configuration described above, and white light emission can be obtained. The device structure will be as follows.

[0199] In the top emission structure shown in Figure 4, the colored layer (red colored layer 1034R, green colored layer) The sealing is performed using a sealing substrate 1031 having a color layer 1034G and a blue colored layer 1034B. This can be done. The encapsulation substrate 1031 has a black matrix positioned between the pixels. 1035 may be provided. Colored layer (red colored layer 1034R, green colored layer 1034G, The blue colored layer (1034B) and the black matrix are formed by the overcoat layer (1036). It may be covered. The sealing substrate 1031 shall be a light-transmitting substrate. Furthermore, while we have shown an example of full-color display using four colors—red, green, blue, and white—this is not particularly limited. Alternatively, full-color display may be performed using four colors: red, yellow, green, and blue, or three colors: red, green, and blue.

[0200] In top-emission type light-emitting devices, a microcavity structure can be suitably applied. EL devices with a microcavity structure use a reflective electrode as the anode and a semi-transparent / semi-reflective cathode. This is obtained by using a ray electrode. Between the reflective electrode and the semitransmissive / semi-reflective electrode, there is at least It has an EL layer and at least an emissive layer that forms an emissive region.

[0201] The reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%. It is %, and its resistivity is 1 × 10⁻⁶. -2 Assume the membrane is less than Ωcm in diameter. Also, semipermeable... The semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%. , and its resistivity is 1 × 10 -2 Assume the membrane is less than Ωcm in diameter.

[0202] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transmitting / semi-reflective electrode. It is reflected and resonates.

[0203] The EL device changes the thickness of the transparent conductive film, the aforementioned composite material, and the carrier transport material. This allows us to change the optical distance between the reflective electrode and the semitransmissive / semi-reflective electrode. Furthermore, between the reflective electrode and the semitransmissive / semi-reflective electrode, the light of the resonant wavelength is amplified, and resonance occurs. It can attenuate light of wavelengths that are not present.

[0204] Furthermore, the light reflected back by the reflective electrode (the first reflected light) is semi-transmitted from the light-emitting layer. • Because it causes significant interference with the light (first incident light) that directly enters the semi-reflecting electrode, the reflective electrode and The optical distance of the light-emitting layer is (2n-1)λ / 4 (where n is a natural number greater than or equal to 1, and λ is amplified). It is preferable to adjust the wavelength of the emitted light. By adjusting the optical distance, the first By aligning the phase of the reflected light and the first incident light, the light emitted from the light-emitting layer can be further amplified. ru.

[0205] Furthermore, even if the EL layer in the above configuration has a structure with multiple light-emitting layers, it may still be a single light-emitting layer The structure may also have the following characteristics, for example, in combination with the configuration of the tandem EL device described above. Furthermore, multiple EL layers are provided in a single EL device with a charge generation layer in between, and each EL layer This may also be applied to a configuration in which one or more light-emitting layers are formed.

[0206] Having a microcavity structure enhances the emission intensity in the front direction at specific wavelengths. This makes it possible to reduce power consumption. Furthermore, the four sub-colors red, yellow, green, and blue are used. In the case of a light-emitting device that displays images as is, in addition to the brightness enhancement effect of yellow light emission, all sub-pixels By applying a microcavity structure tailored to the wavelength of each color, a light-emitting device with excellent characteristics can be produced. It can be placed there.

[0207] The light-emitting device in this embodiment uses the EL device described in Embodiment 2. This makes it possible to obtain a light-emitting device with good characteristics. Specifically, the method described in Embodiment 2. Because EL devices have good luminous efficiency, it is possible to create light-emitting devices with low power consumption. ru.

[0208] Up to this point, we have explained active-matrix light-emitting devices, but from here on we will discuss passive devices. A matrix-type light-emitting device will be described. Figure 5 shows a passive light-emitting device fabricated by applying the present invention. Figure 5A shows a perspective view of the light-emitting device, and Figure 5B shows a diagram. This is a cross-sectional view of 5A cut along the X and Y lines. In Figure 5, on the substrate 951, there are electrodes 952 and An EL layer 955 is provided between electrode 956 and electrode 952. The end of electrode 952 is covered with an insulating layer 953. It is covered with a partition layer 954 on top of the insulating layer 953. As the side walls of 54 approach the substrate surface, the distance between one side wall and the other becomes narrower. It has a slope that goes in that direction. In other words, the cross-section of the partition layer 954 in the short-side direction is trapezoidal, The bottom edge (the edge that faces the same direction as the surface direction of the insulating layer 953 and is in contact with the insulating layer 953) is the top edge. It is shorter than (the side that faces the same direction as the surface direction of the insulating layer 953 and does not come into contact with the insulating layer 953). In this way, by providing the partition layer 954, defects in the EL device caused by static electricity, etc., are prevented. This can be done. Also, in the case of a passive matrix type light-emitting device, as described in Embodiment 2 It uses an EL device, and is a highly reliable light-emitting device, or a light-emitting device with low power consumption. It can be placed there.

[0209] The light-emitting device described above uses a number of tiny EL devices arranged in a matrix. Because these can be controlled, it can be suitably used as a display device for representing images. It is a light-emitting device.

[0210] Furthermore, this embodiment can be freely combined with other embodiments.

[0211] (Embodiment 4) In this embodiment, Figure 6 shows an example in which the EL device described in Embodiment 2 is used as a lighting device. The explanation will be given with reference to the following. Figure 6B is a top view of the lighting device, and Figure 6A is the ef cross section in Figure 6B. This is a view drawing.

[0212] In this embodiment, the lighting device has an anode 4 on a translucent substrate 400 which is a support. 01 is formed. The anode 401 corresponds to the anode 101 in Embodiment 2. Anode When light is extracted from the 401 side, the anode 401 is formed from a translucent material.

[0213] A pad 412 for supplying voltage to the cathode 404 is formed on the substrate 400.

[0214] An EL layer 403 is formed on the anode 401. The EL layer 403 is in Embodiment 2 The configuration of the EL layer 103, or the combination of the light-emitting units 511, 512 and the charge generation layer 513. This corresponds to the structure, etc. Please refer to the relevant description for details on these structures.

[0215] The cathode 404 is formed by covering the EL layer 403. The cathode 404 is the cathode 1 in Embodiment 2. This corresponds to 02. When light is extracted from the anode 401 side, the cathode 404 is made of a material with high reflectivity. It is formed by the cathode 404 being connected to the pad 412, thereby supplying voltage. It can be done.

[0216] The above describes an EL device having an anode 401, an EL layer 403, and a cathode 404 in this embodiment. The lighting device shown is equipped with the following: The EL device is a high-efficiency EL device. Therefore, the lighting device in this embodiment can be a lighting device with low power consumption.

[0217] The substrate 400 on which the EL device having the above configuration is formed and the sealing substrate 407 are sealed The lighting device is completed by fixing and sealing it using materials 405 and 406. Either 405 or 406 is acceptable. Also, the inner sealant 406 (Figure 6B) A desiccant can also be mixed in (not shown), which allows it to absorb moisture. This will lead to improved reliability.

[0218] Furthermore, the pad 412 and a portion of the anode 401 are extended outside the sealing materials 405 and 406. This allows it to be used as an external input terminal. Furthermore, a converter or similar device can be mounted on top of it. An IC chip 420 or similar may be provided.

[0219] As described above, the lighting device described in this embodiment uses an EL device and the EL device described in Embodiment 2 By using a chair, it can be a light-emitting device with low power consumption.

[0220] (Embodiment 5) In this embodiment, an example of an electronic device that includes the EL device described in Embodiment 2 as a part thereof is provided. This will be explained. The EL device described in Embodiment 2 has good luminous efficiency and low power consumption. It is a small EL device. As a result, the electronic device described in this embodiment has a power consumption of It is possible to create an electronic device that has a small light-emitting part.

[0221] Examples of electronic devices to which the above EL devices are applied include television equipment (televisions, and (Also called a television receiver), monitors for computers, digital cameras, digital cameras Digital video cameras, digital photo frames, mobile phones (both mobile phones and mobile phone devices) (Examples include) portable game consoles, personal digital assistants, audio playback devices, and large game machines such as pachinko machines. These are some examples. Specific examples of these electronic devices are shown below.

[0222] Figure 7A shows an example of a television system. The television system is housed in a casing 7101. A display unit 7103 is incorporated. Also, here, the stand 7105 supports the housing 71 This shows the configuration supporting 01. The display unit 7103 makes it possible to display video. Yes, the display unit 7103 has the EL devices described in Embodiment 2 arranged in a matrix. It is composed of.

[0223] The television equipment can be operated using the control switches on the housing 7101 or a separate remote control. This can be done using the device 7110. The remote control device 7110 has an operation key 7109. This allows you to control the channel and volume, and the video displayed on the display unit 7103 It can be operated. Also, the remote control unit 7110 A display unit 7107 that displays the information output from the unit may also be provided.

[0224] The television system shall consist of a receiver, modem, etc. It can receive television broadcasts, and also communicate via wired or wireless connection through a modem. By connecting to a network, one-way (sender to receiver) or two-way (sender to receiver) communication is possible. It is also possible to communicate information between recipients, or between recipients themselves.

[0225] Figure 7B1 shows a computer, consisting of the main unit 7201, the casing 7202, the display unit 7203, and the keyboard. Includes code 7204, external connection port 7205, pointing device 7206, etc. Oh, this computer arranges the EL devices described in Embodiment 2 in a matrix. It is manufactured by using it in the display unit 7203. The computer in Figure 7B1 is the same as in Figure 7B2. Such a form is also acceptable. The computer in Figure 7B2 has a keyboard 7204, a pointer A second display unit 7210 is provided instead of the display device 7206. The unit 7210 is a touch panel, and the inputs displayed on the second display unit 7210 Input can be performed by operating the display with a finger or a special pen. Also, the second table The display unit 7210 can display not only input images but also other images. The display unit 7203 may also be a touch panel. The two screens are connected by a hinge. This also prevents problems such as scratches or damage to the screen during storage or transport. It can be stopped.

[0226] Figure 7C shows an example of a mobile terminal. The mobile phone is built into the casing 7401. In addition to the display unit 7402, there are operation buttons 7403, an external connection port 7404, a speaker 7405, It is equipped with a microphone 7406, etc. The mobile phone is an EL device as described in Embodiment 2. It has a display unit 7402 made by arranging chairs in a matrix.

[0227] The mobile terminal shown in Figure 7C allows information to be entered by touching the display unit 7402 with a finger or the like. It is also possible to configure it so that you can make a phone call or compose an email. These operations can be performed by touching the display unit 7402 with a finger or other object.

[0228] The display unit 7402 has three main modes. The first is a display that primarily displays images. The first mode is display mode, the second is input mode which is mainly for inputting information such as characters. The third is display mode. This is a display + input mode, which is a combination of two modes: display mode and input mode.

[0229] For example, when making a phone call or composing an email, the display unit 7402 is used for text input. In this case, the primary text input mode should be used, and you should perform the input operation for the characters displayed on the screen. It is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402. It seems so.

[0230] Furthermore, the mobile device has sensors inside that detect tilt, such as a gyroscope and an accelerometer. By installing the device, the orientation of the mobile terminal (portrait or landscape) is determined, and the screen display of the display unit 7402 is displayed accordingly. The display can be set to switch automatically.

[0231] Furthermore, screen modes can be switched by touching the display unit 7402 or by operating the housing 7401. This is done by operating button 7403. Also, the type of image displayed on display unit 7402 Therefore, it is also possible to switch between them. For example, the image signal displayed on the display unit is a video signal. Switch to display mode if it's data, or to input mode if it's text data.

[0232] Furthermore, in input mode, the signal detected by the optical sensor of the display unit 7402 is detected and displayed If there is no input via touch operation on unit 7402 for a certain period of time, the screen mode will be changed to input mode. You may also control the system to switch from that display mode to a different mode.

[0233] The display unit 7402 can also function as an image sensor. For example, the display unit 74 By touching device 02 with the palm or fingers, the user can be authenticated by capturing images of their palm print, fingerprints, etc. Furthermore, the display unit may have a backlight that emits near-infrared light or a sensing light that emits near-infrared light. Using the appropriate source, it is also possible to image finger veins, palmar veins, and other veins.

[0234] The configuration shown in this embodiment is achieved by appropriately combining the configurations shown in Embodiments 2 to 4. They can be used together.

[0235] As described above, the application range of the light-emitting device equipped with the EL device described in Embodiment 2 is extremely broad. This light-emitting device can be applied to electronic devices in all fields. Embodiment 2 By using the EL devices described, it is possible to obtain electronic devices with low power consumption.

[0236] Figure 8A is a schematic diagram showing an example of a cleaning robot.

[0237] The cleaning robot 5100 has a display 5101 located on the top and multiple displays located on the sides. It has several cameras 5102, brushes 5103, and operation buttons 5104. However, the underside of the 5100 cleaning robot is equipped with wheels, a suction port, etc. The 5100 robot also includes an infrared sensor, ultrasonic sensor, acceleration sensor, and piezo sensor. It is equipped with various sensors such as optical sensors and gyro sensors. Also, the cleaning robot 5 Unit 100 is equipped with wireless communication means.

[0238] The cleaning robot 5100 moves autonomously, detects the dirt 5120, and uses the suction port located on its underside to... It can then vacuum up the dust.

[0239] Furthermore, the cleaning robot 5100 analyzes images captured by the camera 5102, and detects walls, furniture, or It can determine the presence or absence of obstacles such as steps. Furthermore, image analysis can detect wiring and other obstacles. If an object that may become entangled in brush 5103 is detected, the rotation of brush 5103 will be stopped. can.

[0240] The display 5101 displays information such as the battery level and the amount of dust collected. This is possible. The path taken by the cleaning robot 5100 can be displayed on the display 5101. Good. Also, the display 5101 is a touch panel, and the operation buttons 5104 are on the display. It may also be provided at Ray 5101.

[0241] The cleaning robot 5100 can communicate with portable electronic devices 5140 such as smartphones. Yes, it is possible. Images captured by camera 5102 can be displayed on the portable electronic device 5140. Therefore, the owner of the 5100 cleaning robot can know what's happening in the room even when they're away from home. It is possible to display the information on the display 5101 on portable electronic devices such as smartphones. You can also check it there.

[0242] The light-emitting device described in Embodiment 3 can be used in the display 5101.

[0243] The robot 2100 shown in Figure 8B consists of a computing unit 2110, an illuminance sensor 2101, and a microfiber sensor. Phone 2102, Top camera 2103, Speaker 2104, Display 2105, Bottom camera It includes a mer 2106, an obstacle sensor 2107, and a moving mechanism 2108.

[0244] Microphone 2102 has the function of detecting the user's voice and ambient sounds, etc. Speaker 2104 has the function of emitting sound. Robot 2100 has a microphone Using the 2102 and speaker 2104, communication with the user is possible. It is possible.

[0245] The display 2105 has the function of displaying various information. The robot 2100 is The user can display the desired information on the display 2105. The 2105 may have a touch panel. Also, the display 2105 is removable. It can be any information terminal capable of charging, and by installing it in a fixed position on the robot 2100, And it enables the transfer of data.

[0246] The upper camera 2103 and lower camera 2106 are used to image the area around the robot 2100. It has the ability to detect obstacles. Furthermore, the obstacle sensor 2107 uses the moving mechanism 2108 to detect robot 210 Robot 21 can detect the presence or absence of obstacles in the direction of travel as it moves forward. 00 uses the upper camera 2103, the lower camera 2106 and the obstacle sensor 2107 It can recognize its surroundings and move safely. The light emission described in Embodiment 3 The device can be used with the display 2105.

[0247] Figure 8C is a diagram illustrating an example of a goggle-type display. A goggle-type display is an example of... For example, the casing 5000, display unit 5001, speaker 5003, LED lamp 5004, operation Key 5005 (including power switch or operation switch), connection terminal 5006, sensor 5 007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, Chemical substances, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow rate, humidity, gradient, vibration (Includes functions for measuring motion, odor, or infrared radiation), microphone 5008, display unit It includes parts 5002, a support part 5012, an earphone 5013, etc.

[0248] The light-emitting device described in Embodiment 3 is used for the display unit 5001 and the second display unit 5002. It is possible.

[0249] Figure 9 shows an example in which the EL device described in Embodiment 2 is used in a desk lamp, which is a lighting device. The desk lamp shown in Figure 9 has a housing 2001 and a light source 2002. As for the second example, the lighting device described in Embodiment 3 may be used.

[0250] Figure 10 shows the EL device described in Embodiment 2 used as an indoor lighting device 3001. This is an example. The EL device described in Embodiment 2 is an EL device with high luminous efficiency. This allows for a lighting device with low power consumption. Also, the EL device described in Embodiment 2 Because chairs can be made to cover a large area, they can be used as large-area lighting devices. The EL device described in Embodiment 2 is thin and can therefore be used as a thinned lighting device. This becomes possible.

[0251] The EL device described in Embodiment 2 can also be mounted on the windshield or dashboard of an automobile. It can be mounted. Figure 11 shows the EL device described in Embodiment 2 mounted on the front of an automobile. This shows one embodiment for use in a display or dashboard. Display areas 5200 to 5203 are This is a display area provided using the EL device described in Embodiment 2.

[0252] Display area 5200 and display area 5201 are in an embodiment provided on the windshield of an automobile. This is a display device equipped with the EL device described in 2. The EL device described in Embodiment 2. This is achieved by fabricating the anode and cathode with translucent electrodes, allowing the other side to be seen through. It can be used as a display device in a so-called see-through state. Even when installed on a car's windshield, it should be installed without obstructing the driver's view. This is possible. Furthermore, if transistors or other components for driving are provided, organic semiconductor materials can be used. Translucent transistors such as organic transistors and transistors using oxide semiconductors Using Zista would be a good idea.

[0253] The display area 5202 is equipped with the EL device described in Embodiment 2, which is provided in the pillar portion. This is a display device. The display area 5202 displays images from an imaging device installed on the vehicle body. By extending it, the view obstructed by the pillar can be compensated for. Also, similarly, The display area 5203 provided on the shoeboard section allows the view obstructed by the vehicle body to be seen by the car. By displaying images from externally mounted imaging devices, blind spots are compensated for, and safety is enhanced. It can be done by projecting images that complement the parts that are not visible, making it more natural. Safety checks can be performed without any sense of unease.

[0254] Display area 5203 also displays navigation information, speedometer, tachometer, odometer, fuel gauge, and gear. By displaying the status, air conditioner settings, and other information, various types of information can be provided. The display items and layout can be changed as needed to suit the user's preferences. Furthermore, this information can also be displayed in display areas 5200 to 5202. Display areas 5200 to 5203 can also be used as lighting devices.

[0255] Figures 12A and 12B also show a foldable portable information terminal 5150. The portable information terminal 5150 consists of a housing 5151, a display area 5152, and a bendable portion 5153. It has the following features. Figure 12A shows the portable information terminal 5150 in its unfolded state. Figure 12B shows it folded. The image shows the folded portable information terminal 5150. The portable information terminal 5150 has a large display area. Despite having 5152 components, it folds up compactly and is highly portable.

[0256] The display area 5152 can be folded in half by the bending portion 5153. Bending portion 515 3 consists of an expandable member and multiple support members, and when folded, the expandable The member stretches. The bent portion 5153 has a radius of curvature of 2 mm or more, preferably 3 mm or more. It folds up.

[0257] Note that the display area 5152 is a touch panel (input / output) equipped with a touch sensor (input device). It may also be a device. The light-emitting device described in Embodiment 3 is used in the display area 5152. It is possible.

[0258] Figures 13A to 13C also show a foldable portable information terminal 9310. Figure 13A Figure 13B shows the portable information terminal 9310 in its unfolded state. Figure 13C shows a portable information terminal 9310 in an intermediate state, transitioning from one state to the other. This shows the portable information terminal 9310 in its folded state. In its unfolded state, it offers excellent portability, and in its unfolded state, it provides a seamless, wide display area for displaying information. Excellent readability.

[0259] The display panel 9311 is supported by three housings 9315 connected by hinges 9313. The display panel 9311 is a touch panel equipped with a touch sensor (input device). It may also be an input / output device. In addition, the display panel 9311 is connected via the hinge 9313. By bending the two housings 9315, the mobile information terminal 9310 is unfolded. It can be reversibly deformed into a folded state. The device can be used as a display panel 9311. [Examples]

[0260] In this embodiment, the EL device composition according to one embodiment of the present invention described in the embodiment was used. Using the manufactured EL device 1 and EL device 2, and a comparative EL device composition The fabricated EL device 3 will now be described. The structural formulas of the organic compounds used in this example are as follows: This will be shown.

[0261] [ka]

[0262] [ka]

[0263] (Method for fabricating EL device 1) First, indium tin oxide (ITSO) containing silicon oxide is sputtered onto a glass substrate. A film was deposited using the 2-phase method to form the anode 101. The film thickness was 70 nm, and the electrode area was 2 The dimensions were set to mm x 2 mm.

[0264] Next, as a pretreatment for forming the EL device on the substrate, the substrate surface is washed with water, and 2 After firing at 0°C for 1 hour, UV ozone treatment was performed for 370 seconds.

[0265] Then, 10 -4 A substrate is introduced into a vacuum deposition apparatus where the internal pressure is reduced to approximately Pa, and then vacuum deposition is performed. After vacuum firing at 170°C for 30 minutes in the heating chamber of the apparatus, the substrate is left for approximately 30 minutes. It was allowed to cool.

[0266] Next, the substrate on which the anode 101 is formed is turned so that the surface with the anode 101 is facing downwards. The substrate is fixed to a substrate holder provided inside the air deposition apparatus, and deposition is carried out on the anode 101 using resistance heating. According to the law, the structure represented by the above structural formula (i) is 4,4',4''-(benzene-1,3,5-tri Il(tri(dibenzothiophene)) (abbreviation: DBT3P-II) and molybdenum oxide (VI) ) and are arranged in a weight ratio of 2:1 (=DBT3P-II:molybdenum oxide) at 75nm A hole injection layer 111 was formed by co-deposition.

[0267] Next, on the hole injection layer 111, N-(1,1'-bipheny represented by the above structural formula (ii) is injected. (4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl ]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) film thickness 2 A hole transport layer 112 was formed by depositing a material so that it had a wavelength of 0 nm.

[0268] Next, the 9-[(3'-dibenzothiophen-4-yl) represented by the above structural formula (iii) is shown. )biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine( (Abbreviation: 9mDBtBPNfpr) and the 9,9-dimethyl- represented by the above structural formula (iv) N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl] Fluoren-2-amine (abbreviated as PCBAF) and a pre-mixed weight ratio of 0.8:0.2 ( A composition mixed so that =9mDBtBPNfpr:PCBAF) and the above structural formula ( bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)} represented as v) )-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2 ,2,6,6-tetramethyl-3,5-heptanedionato-κ2O,O')iridium( III) (abbreviation: [Ir(dmdppr-m5CP)2(dpm)]) and 1 by weight ratio :0.1(=[Composition of 9mDBtBPNfpr and PCBAF mixed together]:[Ir(dm The light-emitting layer 113 is co-deposited at 40 nm so that it becomes dppr-m5CP)2(dpm)]) Formed. Note that when forming the light-emitting layer 113, the above 9mDBtBPNfpr and the above PCB AF was deposited using the same deposition source as a sample of a pre-mixed composition.

[0269] Subsequently, 9mDBtBPNfpr was deposited onto the light-emitting layer 113 to a thickness of 30 nm. After that, the structure represented by the above structural formula (vi) is 2,9-bis(naphthalene-2-yl)-4,7- Diphenyl-1,10-phenanthroline (abbreviation: NBPhen) to a film thickness of 15 nm The electron transport layer 114 was formed by depositing the material in this manner.

[0270] After forming the electron transport layer 114, lithium fluoride (LiF) is deposited to a thickness of 1 nm. Then, an electron injection layer 115 is formed, followed by the deposition of aluminum to a thickness of 200 nm. By doing so, cathode 102 was formed and EL device 1 was fabricated.

[0271] Furthermore, EL device 1 performed continuous deposition of the light-emitting layer without changing the sample in the deposition source. Eight devices, numbered n=1 to n=8, with identical layered structures were fabricated.

[0272] (Method for fabricating EL device 2) EL device 2 uses the PCBAF in the light-emitting layer of EL device 1 with the above structural formula (vii) The represented N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-bis Replace with (9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF) Other than that, it was fabricated in the same way as EL device 1. Note that when forming the light-emitting layer 113, 9 mDB tBPNfpr and PCBFF have a pre-set weight ratio of 0.8:0.2 (=9mDBtBPN As a sample of a composition mixed to be fpr:PCBFF, vaporized using the same vapor deposition source. I arrived.

[0273] Furthermore, EL device 2 performed continuous deposition of the light-emitting layer without changing the sample in the deposition source. Eight devices, numbered n=1 to n=8, with identical layered structures were fabricated.

[0274] (Method for fabricating EL device 3) EL device 3 uses PCBBiF in the hole transport layer 112 of EL device 1 in the above structure The formula (viii) represents 4,4'-diphenyl-4''-(9-phenyl-9H-cal Replace with bazole-3-yl)triphenylamine (abbreviation: PCBBi1BP) and luminescent layer 1 13 is represented by the above structural formula (ix) 8-(2,2'-binaphthyl-6-yl)-4-[ 3-(dibenzothiophen-4-yl)phenyl-[1]benzofl[3,2-d]pyri Dimethyl (abbreviation: 8(βN2)-4mDBtPBfpm) and represented by the above structural formula (x) 9,9-dimethyl-N-[4-(1-naphthyl)phenyl]-N-[4-(9-phenyl] -9H-carbazole-3-yl)phenyl]-9H-fluoren-2-amine (abbreviation: PCBNBF) and 4mDBtP are pre-composed with a weight ratio of 0.7:0.3 (=8(βN2)-4mDBtP). A composition mixed to form Bfpm):PCBNBF, and [Ir(dmdppr-m (5CP)²(dpm)]) and by weight ratio 1:0.1 (=[8(βN2)-4mDBtP Composition of mixed Bfpm and PCBNBF]:[Ir(dmdppr-m5CP)2(d The electron transport layer 114 is formed by co-depositing at 40 nm so that it is 9 mDB tBPNfpr is represented by the above structural formula (xi) 9-[3-(4,6-diphenyl-1 ,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H- Aside from changing to carbazole (abbreviation: mPCCzPTzn-02), it is the same as EL device 1. It was fabricated. Furthermore, when forming the light-emitting layer 113, 8(βN2)-4mDBtPBfpm and P CBNBF was deposited using the same deposition source as a sample of a pre-mixed composition.

[0275] Furthermore, EL device 3 performed continuous deposition of the light-emitting layer without changing the sample in the deposition source. Five devices, n=1 to n=5, with identical layered structures were fabricated.

[0276] The device structures of EL device 1 to EL device 3 are summarized in the table below.

[0277] [Table 1]

[0278] Here, Table 2 shows the formation of the light-emitting layer 113 of EL device 1 to EL device 3 by deposition. When using the pre-mixed composition for each device, two types of organic compounds were used in the vacuum (1 ×10 -2 The results of measuring the 5% weight loss temperature at approximately Pa are shown. The degree is determined by thermogravimetric analysis - differential thermal analysis (TG-DTA). (Ifferential Thermal Analysis) was performed to determine the relationship between weight and temperature. The measurement was performed using a high-vacuum differential thermometer (Bruker AEC). We used the TG-DTA2410SA manufactured by Suesu Co., Ltd.

[0279] [Table 2]

[0280] As shown in Table 2, the 5% weight loss of organic compounds contained in the sample of the pre-mixed composition. The small temperature differences were 43°C for EL device 1, 21°C for EL device 2, and 66°C for EL device 3. It was ℃.

[0281] These EL devices are placed in a glove box under a nitrogen atmosphere, while the EL devices are exposed to the atmosphere. The process of sealing the device with a glass substrate to prevent exposure to sunlight (applying a sealing material around the device) After UV treatment and heat treatment at 80°C for 1 hour during sealing, the initial characteristics were measured. A colorimeter (Topcon BM-5A) was used to measure luminance and CIE chromaticity. For measuring the field emission spectrum, a multi-channel spectrometer (manufactured by Hamamatsu Photonics Corporation) was used. PMA-11) was used.

[0282] Figure 15 shows the brightness-current density characteristics of EL device 1, and Figure 16 shows the brightness-voltage characteristics. The pressure characteristics are shown in Figure 17, the external quantum efficiency-luminance characteristics in Figure 18, and the emission spectrum in Figure 19. Figure 20 shows the brightness-current density characteristics of device L2, and Figure 21 shows the brightness-voltage characteristics and current-voltage characteristics. The characteristics are shown in Figure 22, the external quantum efficiency-luminance characteristics in Figure 23, and the emission spectrum in Figure 24. Figure 25 shows the brightness-current density characteristics of device 3, Figure 26 shows the brightness-voltage characteristics, and Figure 26 shows the current-voltage characteristics. The properties are shown in Figure 27, the external quantum efficiency-luminance characteristics in Figure 28, and the emission spectrum in Figure 29.

[0283] Furthermore, the brightness of each EL device is 1000 cd / cm². 2 The main characteristics of the vicinity are as follows: This is shown in the table. In addition to the device characteristics mentioned above, separate references were used for each device. The characteristics of devices that underwent deposition using the deposition source were also shown.

[0284] [Table 3]

[0285] From Figures 15 to 29 and Table 3, EL device 1 and EL device 2 are both equivalent. It was found to exhibit good initial characteristics. On the other hand, EL device 3 showed large variations in characteristics. It was found to be an EL device.

[0286] Furthermore, the current density is 75 mA / cm². 2 The graph shows the change in brightness with respect to operating time. Figures 30 to 32 and 39 are shown. Figure 30 is EL device 1, and Figures 31 and 39 are shown. Figure 39 shows the results for EL device 2, and Figure 32 shows the results for EL device 3. Note that Figure 39 is 8 This graph shows the change in brightness with respect to operating time at a high temperature of 5°C. It was found that both EL device 1 and EL device 2 exhibited similarly good lifespans. On the other hand, EL device 3 had a large variation in lifespan, and its device characteristics were not stable. Ta.

[0287] Figures 30 to 32 show the materials that make up the composition obtained by mixing two types of materials that are used as a sample for vapor deposition. A composition according to one embodiment of the present invention, wherein the difference in 5% weight loss temperature under high vacuum is 50°C or less. EL devices 1 and EL devices 2, which were fabricated using this method, were produced by continuous deposition. It was found to be an EL device with little degradation of its properties. On the other hand, the composition of the sample for deposition Samples were used that exhibited a 66°C difference in the 5% weight loss temperature under high vacuum of the materials constituting the object. EL device 3 was found to be an EL device with significant degradation and variability in its characteristics.

[0288] Here, among the group of EL devices 2 that showed good characteristics, n=1 to n=4 E Regarding the composition of 9mDBtBPNfpr and PCBFF in the light-emitting layer of L devices The results of the investigation are shown below. The measurement sample was n=1 of the above device 2 cut to 2 mm. n=4 and each reference device were placed in 40 μl of mixed solvent (acetonitrile). The solution used was dissolved in chloroform (7:3). Also, the weight ratio before deposition was 0.8 Sample 0.5 was mixed so that the ratio was 0.2 (=9mDBtBPNfpr:PCBFF). Dissolve mg in 2 ml of chloroform, dilute 5 times with acetonitrile, and refer The measurement was performed as a sample. In addition, the sample remaining in the deposition source after the EL device was fabricated was also vaporized. The measurements were taken in the same manner as the sample before arrival.

[0289] Measurements were performed using Waters Acquity UPLC®. The material used is Acquity UPLC BEH C8 (2.1×100mm 1.7μm). The column temperature was set to 40°C. Mobile phase A was acetonitrile, and mobile phase B was 0.1% A formic acid aqueous solution was used. The sample injection volume was 5.0 μL. The results are shown in the table below. .

[0290] [Table 4]

[0291] Thus, an EL device deposited using an EL device composition according to one aspect of the present invention The ratio of 9mDBtBPNfpr and PCBFF in the pre-mixed EL device The composition is almost the same as that of the composition used for the vapor deposition, and the composition of the sample remaining in the vapor deposition source is also similar. That is, the EL device composition according to one aspect of the present invention is subjected to repeated deposition. It was found that this is an EL device composition that is less prone to compositional changes in the deposited film. Furthermore, as a result, the characteristics of EL devices fabricated using this composition also have a significant impact. It was found that this reduces the likelihood of stuttering. [Examples]

[0292] In this embodiment, the EL device composition according to one embodiment of the present invention described in the embodiment was used. The fabricated EL device 4 will now be described. The structural formulas of the organic compounds used in this example are shown below. show.

[0293] [ka]

[0294] (Method for fabricating EL device 4) First, indium tin oxide (ITSO) containing silicon oxide is sputtered onto a glass substrate. A film was deposited using the 2-phase method to form the anode 101. The film thickness was 70 nm, and the electrode area was 2 The dimensions were set to mm x 2 mm.

[0295] Next, as a pretreatment for forming the EL device on the substrate, the substrate surface is washed with water, and 2 After firing at 0°C for 1 hour, UV ozone treatment was performed for 370 seconds.

[0296] Then, 10 -4 A substrate is introduced into a vacuum deposition apparatus where the internal pressure is reduced to approximately Pa, and then vacuum deposition is performed. After vacuum firing at 170°C for 30 minutes in the heating chamber of the apparatus, the substrate is left for approximately 30 minutes. It was allowed to cool.

[0297] Next, the substrate on which the anode 101 is formed is turned so that the surface with the anode 101 is facing downwards. The substrate is fixed to a substrate holder provided inside the air deposition apparatus, and deposition is carried out on the anode 101 using resistance heating. According to the law, the structure represented by the above structural formula (i) is 4,4',4''-(benzene-1,3,5-tri Il(tri(dibenzothiophene)) (abbreviation: DBT3P-II) and molybdenum oxide (VI) ) and are arranged in a weight ratio of 2:1 (=DBT3P-II:molybdenum oxide) at 45nm A hole injection layer 111 was formed by co-deposition.

[0298] Next, on the hole injection layer 111, 4,4'-diphenyl represented by the above structural formula (viii) is injected. -4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation) A hole transport layer 112 was formed by depositing PCBBi1BP to a thickness of 20 nm. .

[0299] Next, 8-(1,1'-biphenyl-4-yl)-4, represented by the above structural formula (xii) -[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofl[3,2-d ] Pyrimidine (abbreviation: 8BP-4mDBtPBfpm) and the above structural formula (xiii) 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4- (Il)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP) The initial weight ratio is 0.5:0.5 (=8BP-4mDBtPBfpm:mBPCCBP). A composition mixed in such a way, represented by the above structural formula (xiv) [2-(4-methyl-5-f [phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN) Phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mdppy)]) The weight ratio of the two is 1:0.1 (= [8BP-4mDBtPBfpm and mBPCCBP are mixed] The composition is formed by co-depositing at 40 nm to achieve the following result: [Ir(ppy)2(mdppy)]) A light-emitting layer 113 was formed. Note that when forming the light-emitting layer 113, 8BP-4mDBtPBf pm and mBPCCBP were pre-mixed samples and deposited using the same deposition source. .

[0300] Subsequently, 8BP-4mDBtPBfpm is applied to the light-emitting layer 113 to a thickness of 20 nm. After deposition, 2,9-bis(naphthalene-2-yl)-4, represented by the above structural formula (vi), is deposited. ,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) film thickness 10 nm The electron transport layer 114 was formed by depositing the material in such a manner.

[0301] After forming the electron transport layer 114, lithium fluoride (LiF) is deposited to a thickness of 1 nm. Then, an electron injection layer 115 is formed, followed by the deposition of aluminum to a thickness of 200 nm. By doing so, cathode 102 was formed and EL device 4 was fabricated.

[0302] Furthermore, EL device 4 performed continuous deposition of the light-emitting layer without changing the sample in the deposition source. Four devices, n=1 to n=4, with identical layered structures were fabricated.

[0303] The device structure of EL device 4 is summarized in the table below.

[0304] [Table 5]

[0305] Here, Table 5 shows the pre-mixed material used when forming the light-emitting layer 113 of the EL device 4 by deposition. Each device used as the combined composition contains two types of organic compounds in a vacuum (1 × 10 -2 About Pa The results of measuring the 5% weight loss temperature in ) are shown. The 5% weight loss temperature is determined by thermogravimetric analysis. Differential thermal analysis (TG-DTA:Thermogravimetry-Differenti We perform thermal analysis to determine the relationship between weight and temperature (thermogravimetric analysis). The measurement was performed using a high-vacuum differential thermal balance (manufactured by Bruker AXS Corporation). I used the TG-DTA2410SA.

[0306] [Table 6]

[0307] As shown in Table 6, the pre-mixed compositions used in the fabrication of the EL device 4 were tested. The difference in the temperature at which organic compounds in the material lost 5% of their weight was 14°C.

[0308] EL device 4 is placed in a glove box with a nitrogen atmosphere, and the EL device is exposed to the atmosphere. The process of sealing with a glass substrate to prevent this from happening (applying sealing material around the device and sealing) After UV treatment and heat treatment at 80°C for 1 hour (at the stop of operation), the initial characteristics were measured. The measurement method is the same as in Example 1.

[0309] The luminance-current density characteristics are shown in Figure 33, the luminance-voltage characteristics in Figure 34, and the current-voltage characteristics in Figure 35. The external quantum efficiency-luminance characteristics are shown in Figure 36, and the emission spectrum is shown in Figure 37.

[0310] Furthermore, the brightness of EL device 4 is 1000 cd / cm². 2 The main characteristics of the vicinity are as follows: This is shown in the table. In addition to the device characteristics mentioned above, separate references were used for each device. The characteristics of devices that underwent deposition using the deposition source are also shown as a reference.

[0311] [Table 7]

[0312] Figures 33 to 37 and Table 7 show that all EL devices 4 exhibit equally good initial characteristics. It was discovered that...

[0313] Furthermore, the current density is 50 mA / cm². 2The graph shows the change in brightness with respect to operating time. As shown in Figure 38. From Figure 38, each EL device has a similarly good lifespan. It was discovered that it was S.

[0314] Figure 38 shows the composition of two materials mixed together for deposition under high vacuum. Prepared using a composition according to one embodiment of the present invention, wherein the difference in 5% weight loss temperature is 50°C or less. The resulting EL device 4 exhibits less deterioration in characteristics and lifespan due to continuous deposition. It was identified as a device.

[0315] (Reference example) 9mDBtBPNfpr, 8(βN2)-4mDBtPBfpm and used in the examples Since 8BP-4mDBtPBfpm is an undisclosed substance, we will explain each synthesis method. do.

[0316] ≪Method for synthesizing 9mDBtBPNfpr≫ In Example 1, the structural formula (iii) shows 9-[(3'-dibenzothiophen- 4-yl)biphenyl-3-yl]naphtho[1',2':4,5]fl[2,3-b]p This document describes the synthesis method for radin (abbreviated as 9mDBtBPNfpr). The structure of tBPNfpr is shown below.

[0317] [ka]

[0318] <Step 1: 6-Chloro-3-(2-methoxynaphthalene-1-yl)pyrazine-2- Amine synthesis > First, 4.37g of 3-bromo-6-chloropyrazine-2-amine and 2-methoxynaphthalene 4.23g of 1-boronic acid, 4.14g of potassium fluoride, 75g of anhydrous tetrahydrofuran The mL was placed in a three-necked flask fitted with a reflux condenser, and the inside was purged with nitrogen. The inside of the flask was then subjected to reduced pressure. After degassing by stirring, Tris(dibenzylideneacetone)dipalladium(0)( Abbreviation: Pd2(dba)3) 0.57g, tri-tert-butylphosphine (abbreviation: t -4.5 mL of Bu3P was added and the mixture was stirred at 80°C for 54 hours to allow the reaction to proceed.

[0319] After a predetermined time had elapsed, the resulting mixture was filtered by suction, and the filtrate was concentrated. Subsequently, toluene:vinegar was added. Purification was performed by silica gel column chromatography using ethyl acid = 9:1 as the developing solvent. The desired pyrazine derivative was obtained (yellowish-white powder, yield 2.19 g, yield 36%). Step 1 The synthesis scheme is shown below.

[0320] [ka]

[0321] <Step 2: 9-Chloronaphtho[1',2':4,5]Flo[2,3-b]pyrazine Synthesis> Next, the 6-chloro-3-(2-methoxynaphthalene-1-yl) py obtained in step 1 above. 2.18 g of radin-2-amine, 63 mL of anhydrous tetrahydrofuran, and 84 mL of glacial acetic acid are mixed together. The solution was placed in a mouthed flask and the inside was purged with nitrogen. After the flask was cooled to -10°C, nitrite te 2.8 mL of rt-butyl was added dropwise, and the mixture was stirred at -10°C for 30 minutes and then at 0°C for 3 hours. After the procedure, 250 mL of water is added to the resulting suspension and filtered by suction to obtain the desired pyrazi A derivative was obtained (yellowish-white powder, yield 1.48 g, yield 77%). Step 2 synthesis ski The "Mu" is shown below.

[0322] [ka]

[0323] <Step 3: 9-[(3'-dibenzothiophen-4-yl)biphenyl-3-yl] Naphtho[1',2':4,5]flof[2,3-b]pyrazine (abbreviation: 9mDBtBPNf) pr) synthesis > Furthermore, the 9-chloronaphtho[1',2':4,5]floxacin[2,3- obtained in step 2 above b) Pyrazine 1.48g, 3'-(4-dibenzothiophene)-1,1'-biphenyl- 3.41 g of 3-boronic acid, 8.8 mL of 2 M potassium carbonate aqueous solution, 100 mL of toluene, 10 mL of tanol was placed in a three-necked flask, and the inside was purged with nitrogen. The inside of the flask was stirred under reduced pressure. After degassing by mixing, bis(triphenylphosphine)palladium(II) dichloride Add 0.84g of PdCl2(PPh3)2 and stir at 80°C for 18 hours. They responded.

[0324] After a predetermined time had elapsed, the obtained suspension was filtered by suction and washed with water and ethanol. The body is dissolved in toluene and passed through a filtration aid consisting of layers of Celite, alumina, and Celite. After filtering, the target product was obtained by recrystallization in a mixed solvent of toluene and hexane. Pale yellow solid, yield 2.66g, 82% yield.

[0325] The resulting pale yellow solid (2.64 g) was purified by sublimation using the train sublimation method. The purification conditions were: pressure 2.6 Pa, argon gas flow rate 15 mL / min, and 3 The solid was heated at 15°C. After sublimation purification, the target product was obtained as a pale yellow solid in a yield of 2.34 g and 89%. The result was obtained in percentages. The synthesis scheme for Step 3 is shown below.

[0326] [ka]

[0327] Furthermore, nuclear magnetic resonance spectroscopy of the pale yellow solid obtained in step 3 above ( 1 (H-NMR) The analysis results are shown below. From these results, it was found that 9mDBtBPNfpr was obtained. .

[0328] 1 H-NMR.δ(CD2Cl2):7.47-7.51(m,2H),7.60-7. 69(m,5H),7.79-7.89(m,6H),8.05(d,1H),8.10 -8.11(m,2H),8.18-8.23(m,3H),8.53(s,1H),9 .16(d,1H), 9.32(s,1H).

[0329] ≪Synthesis method for 8(βN2)-4mDBtPBfpm≫ In Example 1, the structural formula (ix) is 8-[(2,2'-binaphthalene)-6 -yl]-4-[3-(dibenzothiophen-4-yl)phenyl-[1]benzofloxacin[ Regarding the synthesis method of [3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm) Let me explain. The structure of 8(βN2)-4mDBtPBfpm is shown below.

[0330] [ka]

[0331] <8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophene- Synthesis of 4-yl)phenyl-[1]benzofloflo[3,2-d]pyrimidine 8-Chloro-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzo [3,2-d]pyrimidine 1.21g, [2,2'-binaphthalene]-6-ylborone Acid 0.857g, Tripotassium phosphate 1.67g, Diglycerin 26mL, t-Butanol 0. Place 583g in a three-necked flask, degas the contents of the flask by stirring under reduced pressure, and then purge with nitrogen. Ta.

[0332] This mixture is heated to 60°C, and 18.9 mg of palladium(II) acetate and di(1-adamantine) are added. 61.1 mg of tyl-n-butylphosphine was added and the mixture was stirred at 120°C for 10 hours. Water was added to the reaction mixture and filtered by suction. The resulting filtrate was washed with water, ethanol, and toluene. This material was dissolved in heated toluene, and then filled in with Celite, alumina, and Celite in that order. The solution was passed through a filtration aid. The resulting solution was concentrated and dried to obtain a white solid.

[0333] Total amount of solid obtained: [2,2'-binaphthalene]-6-ylboronic acid 0.348 g, phosphorus 0.621g of tripotassium acid, 13mL of diglycerin, and 0.239g of t-butanol were mixed in three mouthfuls. The mixture was placed in a flask, degassed by stirring under reduced pressure, and then purged with nitrogen. Heat to 0°C, add 8.7 mg of palladium(II) acetate and di(1-adamantyl)-n-butyl 25.1 mg of ruphosphine was added and the mixture was stirred at 120°C for 18.5 hours. Water was added to this reaction mixture. In addition, the filtrate was filtered by suction, and the resulting filtrate was washed with water, ethanol, and toluene.

[0334] This material was dissolved in heated toluene and then filtered using Celite, alumina, and Celite in that order. The solution was passed through an auxiliary agent. The resulting solution was concentrated, dried, and recrystallized with toluene to obtain the target product. A white solid was obtained with a yield of 1.16 g and a yield of 65%. 1.15 g of the obtained white solid was then used to... The substance was purified by sublimation using the rain sublimation method. The sublimation purification conditions were a pressure of 2.64 Pa, and The solid was heated at 365°C while flowing argon gas at a flow rate of 10 mL / min. Sublimation purification. Next, 0.958 g of 8(βN2)-4mDBtPBfpm, which is the present invention (recovery rate 83%), It was obtained as a white solid. The synthesis scheme is shown below.

[0335] [ka]

[0336] Furthermore, nuclear magnetic resonance spectroscopy of the white solid obtained from the above reaction ( 1 Analysis results by 1H-NMR The results are shown below. From these results, it was found that 8(βN2)-4mDBtPBfpm was obtained. It was.

[0337] 1 H-NMR.δ(CDCl3):7.50-7.7.57(m,4H), 7.64-7 .67(m,2H), 7.82(t,1H), 7.86-8.00(m,9H), 8.0 5-8.09(m,2H), 8.14(d,1H), 8.22-8.26(m,5H), 8.69(s,1H), 8.74(d,1H), 9.07(s,1H), 9.35(s, 1H).

[0338] ≪Method for synthesizing 8BP-4mDBtPBfpm≫ In Example 2, the structural formula (xii) is 8-(1,1'-biphenyl-4-i (Lu)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofl[3 This document describes the synthesis method for [2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm). The structure of 8BP-4mDBtPBfpm is shown below.

[0339] [ka]

[0340] <8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl) Synthesis of phenyl-1 benzofl[3,2-d]pyrimidine 8-Chloro-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzo 1.37g of ro[3,2-d]pyrimidine, 0.657g of 4-biphenylboronic acid, phosphate 1.91g of tripotassium, 30mL of diglycerin, and 0.662g of t-butanol in a three-necked flask. The contents were placed in a container, and the flask was agitated under reduced pressure to remove air, followed by nitrogen purging.

[0341] This mixture is heated to 60°C, and 23.3 mg of palladium(II) acetate and di(1-adamantine) are added. 66.4 mg of tyl-n-butylphosphine was added and stirred at 120°C for 27 hours. Water was added to the reaction mixture and filtered by suction. The resulting filtrate was washed with water, ethanol, and toluene. This material was dissolved in heated toluene, and then filled with Celite, alumina, and Celite in that order. The solution was passed through an auxiliary agent. The resulting solution was concentrated, dried, and recrystallized with toluene. The target white solid was obtained in a yield of 1.28 g and 74%.

[0342] 1.26 g of this white solid was purified by sublimation using the train sublimation method. The conditions were: pressure 2.56 Pa, argon gas flow rate 10 mL / min, and 310 The solid was heated at °C. After sublimation purification, 1.01 g of the target product, a pale yellow solid, was obtained with a recovery rate of 80%. The synthesis scheme is shown below.

[0343] [ka]

[0344] Furthermore, nuclear magnetic resonance spectroscopy of the pale yellow solid obtained from the above reaction ( 1 Analysis results by H-NMR The results are shown below. From these results, it can be seen that 8BP-4mDBtPBfpm was obtained. Ta.

[0345] 1 H-NMR.δ(CDCl3):7.39(t,1H), 7.47-7.53(m,4 H), 7.63-7.67(m,2H), 7.68(d,2H), 7.75(d,2H) , 7.79-7.83(m,4H), 7.87(d,1H), 7.98(d,1H), 8 .02(d,1H), 8.23-8.26(m,2H), 8.57(s,1H), 8.7 3(d,1H), 9.05(s,1H), 9.34(s,1H). [Explanation of symbols]

[0346] 101: Anode, 102: Cathode, 103: EL layer, 111: Hole injection layer, 112: Hole transport Layers, 113: Emitting layer, 114: Electron transport layer, 115: Electron injection layer, 116: Charge generation layer, 117: P-type layer, 118: Electronic relay layer, 119: Electron injection buffer layer, 400: Substrate, 401: Anode, 403: EL layer, 404: Cathode, 405: Sealing material, 406: Sealing material, 407: Encapsulation substrate, 412: Pad, 420: IC chip, 501: Anode, 502: Cathode , 511: First light-emitting unit, 512: Second light-emitting unit, 513: Charge generation layer, 6 01: Drive circuit section (source line drive circuit), 602: Pixel section, 603: Drive circuit section (gate Line drive circuit), 604: Encapsulation substrate, 605: Sealing material, 607: Space, 608: Wiring, 6 09: FPC (Flexible Printed Circuit), 610: Component board, 611: Switch FET for chipping, 612: FET for current control, 613: anode, 614: insulator, 616: EL layer, 617: cathode, 618: EL device, 951: substrate, 952: electrode, 953: Insulating layer, 954: partition layer, 955: EL layer, 956: electrode, 1001 substrate, 1002 Underlayer insulating film, 1003 gate insulating film, 1006 gate electrode, 1007 gate electrode, 1008 Gate electrode, 1020 First interlayer insulating film, 1021 Second interlayer insulating film, 1 022 electrode, 1024W anode, 1024R anode, 1024G anode, 1024B Anode, 1025 Partition wall, 1028 EL layer, 1029 Cathode, 1031 Sealing substrate, 10 32 sealant, 1033 transparent substrate, 1034R red colored layer, 1034G green Colored layer, 1034B blue colored layer, 1035 black matrix, 1036 O Bar coat layer, 1037 third interlayer insulating film, 1040 pixel section, 1041 drive circuit section ,1042 Peripheral parts, 2001: Housing, 2002: Light source, 2100: Robot, 2110 : Calculation unit, 2101: Illuminance sensor, 2102: Microphone, 2103: Upper camera 2104: Speaker, 2105: Display, 2106: Bottom camera, 2107: Disability 2108: Harmful object sensor, 2108: Moving mechanism, 3001: Lighting device, 5000: Housing, 5001: Front Display unit, 5002: Second display unit, 5003: Speaker, 5004: LED lamp, 500 5: Operation key, 5006: Connection terminal, 5007: Sensor, 5008: Microphone, 5 012: Support part, 5013: Earphones, 5100: Cleaning robot, 5101: Display I, 5102: Camera, 5103: Brush, 5104: Operation buttons, 5150: Mobile information Terminal, 5151: Housing, 5152: Display area, 5153: Bending part, 5120: Dust, 52 00: Display area, 5201: Display area, 5202: Display area, 5203: Display area, 71 01: Enclosure, 7103: Display unit, 7105: Stand, 7107: Display unit, 7109: Control 7110: Remote control unit, 7201: Main unit, 7202: Enclosure, 7203: Display Sections 7204: Keyboard, 7205: External connection port, 7206: Pointing device Chair, 7210: Second display unit, 7401: Enclosure, 7402: Display unit, 7403: Operation box Tongue, 7404: External connection port, 7405: Speaker, 7406: Microphone, 9310: Personal digital assistant, 9311: display panel, 9312: display area, 9313: hinge, 931 5: Cabinet

Claims

1. A vapor deposition composition comprising a mixture of a first organic compound represented by the following general formula (G1) or the following general formula (G2) and a second organic compound having at least one of a triarylamine skeleton and a carbazole skeleton, A vapor deposition composition wherein the difference in 5% weight loss temperature between the first organic compound and the second organic compound, as measured by thermogravimetric analysis under a pressure of 0.1 Pa or less, is 50 degrees or less. 【Chemistry 1】 (In the formula, Q represents oxygen. Also, Ar ５ This indicates a substituted or unsubstituted condensed aromatic ring. Also, R １ and R ２ (This represents a group with a total of 1 to 100 carbon atoms, where one side is hydrogen and the other side has a hole-transporting skeleton.) 【Chemistry 2】 (In the formula, Q represents oxygen. Ar １ Ar ２ Ar ３ , and Ar ４ Each of the following independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituents of the aromatic hydrocarbon ring are one of the following: an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 to 25, except when Ar 4 is a fluorene ring. Also, m and n are each 0 or 1. Furthermore, A is a group having a total of 12 to 100 carbon atoms and has one or more of the following structures: a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, or a triphenylamine structure. Furthermore, R3 represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted polycyclic saturated hydrocarbon having 7 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms.

2. In claim 1, A vapor deposition composition wherein the first organic compound is represented by the following structural formula (100). 【Transformation 3】

3. In claim 1, A vapor deposition composition in which the first organic compound is represented by the following structural formula (200) or (201). 【Chemistry 4】

4. In any one of claims 1 to 3, A vapor deposition composition in which the second organic compound has a bicarbazole skeleton.

5. In claim 4, The bicarbazole skeleton is a vapor deposition composition in which two carbazolyl groups are bonded to each other at any of the positions 2 to 4.

6. In any one of claims 1 to 3, A vapor deposition composition in which the second organic compound has a triarylamine skeleton and a carbazole skeleton.

7. In claim 6, A vapor deposition composition in which the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group.

8. In claim 6 or claim 7, A vapor deposition composition in which the carbazole skeleton is bonded at positions 2 to 4 or 9.

9. In any one of claims 1 to 8, A vapor deposition composition in which the second organic compound has at least one fluorene skeleton.

10. In any one of claims 1 to 9, A vapor deposition composition in which the first organic compound and the second organic compound form an excited complex.

11. In any one of claims 1 to 10, A vapor deposition composition wherein the difference in the 5% weight loss temperature is 40 degrees or less.

12. In any one of claims 1 to 10, A vapor deposition composition wherein the difference in the 5% weight loss temperature is 30 degrees or less.

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