Indication device

Abstract

To provide a display device capable of reducing power consumption and improving its numerical aperture.SOLUTION: The display device comprises pixels including a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first coloured layer and a first transistor. The second sub-pixel includes a second coloured layer and a second transistor. A portion of a semiconductor layer included in the first transistor and the second transistor, where a channel can be formed, is arranged so as to overlap with the first coloured layer. The first coloured layer is a coloured layer which is likely to absorb light in short wavelength side in comparison with the second coloured layer. A semiconductor layer, an electrode, wiring and the like constituting the transistor transmits visible light.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As the technical field of one aspect of the present invention disclosed in this specification and the like, semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices, their driving methods, or their manufacturing methods can be cited as an example. In this specification and the like, a semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics. Transistors, semiconductor circuits, arithmetic units, storage devices, etc. are one aspect of semiconductor devices. In addition, imaging devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices may have semiconductor devices.

[0003]

[0004]

Background Art

[0004] Power saving of electronic devices is required. In particular, portable electronic devices such as smartphones and tablet terminals use a battery as a power source, so if the power consumption is high, the available period with a single charge will be short.

[0005] [[ID=One of the display devices mounted on an electronic device is a liquid crystal display device. A transmissive liquid crystal display device controls the amount of light transmitted from a backlight by utilizing the optical modulation action of liquid crystal to express contrast and perform image display. ?

[0006] For example, as a switching element connected to each pixel electrode, a metal oxide is used as a channel type Active-matrix liquid crystal display devices that use transistors as the region are known. (Patent Documents 1 and 2). [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2007-123861 [Patent Document 2] Japanese Patent Publication No. 2007-96055 [Overview of the project] [Problems that the invention aims to solve]

[0008] One way to reduce the power consumption of liquid crystal display devices (LCD panels) is to reduce the backlight. One example is efficiently extracting these light rays.

[0009] One aspect of the present invention aims to provide a display device capable of reducing power consumption. Alternatively, one of the challenges is to increase the aperture ratio of the display device. One of the challenges is to provide a reliable display device. Alternatively, a novel display device. One of the objectives is to provide [this].

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title can be extracted from descriptions such as the specification, drawings, and claims. [Means for solving the problem]

[0011] One aspect of the present invention comprises a first colored layer, a second colored layer, a first transistor, and a second transistor. A display device having a transistor, a first display element, and a second display element. The display element is electrically connected to the first transistor and superimposed on the first colored layer. The second display element is electrically connected to the second transistor and superimposed on the second coloring layer. The first transistor has a first semiconductor layer, and the second transistor has a second semiconductor layer. It has a conductive layer. The first semiconductor layer and the second semiconductor layer are superimposed on the first colored layer. It has a part that does so.

[0012] Another aspect of the present invention is a first colored layer, a second colored layer, a third colored layer, and A transistor 1, a second transistor, a third transistor, and a first display element The first display element is a display device having a second display element and a third display element. The second indicator is electrically connected to the first transistor and superimposed on the first colored layer. The child is electrically connected to the second transistor and superimposed on the second colored layer. The third The display element is electrically connected to the third transistor and superimposed on the third colored layer. The first transistor has a first semiconductor layer, and the second transistor has a second semiconductor layer The third transistor has a third semiconductor layer. The body layer and the third semiconductor layer each have portions that overlap with the first colored layer.

[0013] Furthermore, in the above, the first colored layer transmits light with a longer wavelength than the second colored layer. This is preferable. Alternatively, the first colored layer is preferably transparent to red light.

[0014] Furthermore, it is preferable to have a light source that emits white light. In this case, the first The colored layer is located between the light source and the first semiconductor layer, and between the light source and the second semiconductor layer. It is preferable.

[0015] Furthermore, in the above, the first transistor is the first terminal electrode and the first semiconductor The second transistor has a first electrode and a second electrode connected to a layer, and the second transistor has a second gate electrode The configuration includes an electrode, and a third electrode and a fourth electrode connected to the second semiconductor layer. This is preferable. In this case, the first electrode, the second electrode, the third electrode, and the fourth electrode are It is preferable that each of them transmits visible light and has a portion that overlaps with the first colored layer. At this time, the first gate electrode and the second gate electrode also transmit visible light, and Preferably, it has a portion that overlaps with the first colored layer. Alternatively, it has a portion that overlaps with the first gate electrode and Each of the two gate electrodes may have the function of blocking visible light.

[0016] Furthermore, it is preferable to have a first wiring and a second wiring in the above configuration. The first electrode is electrically connected to the first wiring, and the second electrode is electrically connected to the first display element. The third electrode is electrically connected to the second wiring, and the fourth electrode is electrically connected to the second display element. It is preferable to have a configuration in which they are connected. In this case, the fourth electrode is located at the part that intersects with the second wiring. It is preferable to have a configuration that includes a portion. Alternatively, the fourth electrode is located at the portion that intersects with the first wiring. Preferably, the fourth electrode has a portion that intersects with the second wiring. Alternatively, the fourth electrode has a portion that intersects with the second wiring. It is preferable that the first wire does not cross over the second wire.

[0017] Furthermore, it is preferable to have a first wiring and a second wiring in the above configuration. The first transistor has a first gate electrode, and the second transistor has a second gate The configuration includes electrodes. In this case, the first semiconductor layer is superimposed on the first gate electrode. The second semiconductor layer has a portion that connects to the first wiring, and the second semiconductor layer is heavy with the second gate electrode. The configuration has a part that is folded and a part that connects to the second wiring. In this case, the second semiconductor It is preferable that the layer has a portion that intersects with the second wiring. Alternatively, the second The semiconductor layer has portions that intersect with the second wiring and portions that intersect with the first wiring. This is preferable. Alternatively, the second semiconductor layer intersects with either the first or second wiring. It is preferable that there be none.

[0018] Furthermore, in the above, the first semiconductor layer and the second semiconductor layer are each made of a metal oxide. It is preferable to include it.

[0019] Furthermore, in the above, the first display element has a fifth electrode, a sixth electrode, and liquid crystal. It is preferable to do so. At this time, the fifth electrode is electrically connected to the first transistor. Preferably, the fifth electrode and the sixth electrode are transparent to visible light. [Effects of the Invention]

[0020] According to one aspect of the present invention, a display device capable of reducing power consumption can be provided. The aperture ratio of the device can be increased. Alternatively, a table that combines a high aperture ratio with high reliability can be used. We can provide a display device, or we can provide a novel display device.

[0021] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not necessarily have to possess all of these effects. Furthermore, other effects may be considered. This information can be extracted from descriptions such as specifications, drawings, and claims. [Brief explanation of the drawing]

[0022] [Figure 1] Example of a display device configuration. [Figure 2] Example of a display device configuration. [Figure 3] Example of a display device configuration. [Figure 4] Example of a display device configuration. [Figure 5] Example of a display device configuration. [Figure 6] Example of a display device configuration. [Figure 7] Example of a display device configuration. [Figure 8] Example of a display device configuration. [Figure 9] Example of a display device configuration. [Figure 10] Example of a display device configuration. [Figure 11] Example of a display device configuration. [Figure 12] Example of a display device configuration. [Figure 13] Example of a display device configuration. [Figure 14] Example of a display device configuration. [Figure 15] Example of a display device configuration. [Figure 16] Example of a display device configuration. [Figure 17] Example configuration of an input device. [Figure 18] Example configuration of an input device. [Figure 19] Example of a touch panel configuration. [Figure 20] Circuit diagram and timing chart. [Figure 21] Example configuration of a display module. [Figure 22] Example of an electronic device configuration. [Figure 23] Example of an electronic device configuration. [Modes for carrying out the invention]

[0023] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0024] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0025] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0026] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion with the constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0027] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conductivity or non-conductivity. It is possible to realize controlled switching operations, etc. Transistors in this specification are , IGFET(Insulated Gate Field Effect Trans istors and thin-film transistors (TFTs) ) includes.

[0028] In this specification, a display panel, which is one form of a display device, displays an image or the like on its display surface. It has the function of (powering). Therefore, the display panel is one form of an output device.

[0029] Furthermore, in this specification, the substrate of the display panel may be, for example, FPC (Flexible Printed Circuit). (inted Circuit) or TCP (Tape Carrier Packa A connector such as a ge is attached, or the circuit board has a COG (Chip On A display panel module or display module is a device on which an IC is mounted using a glass or similar method. It may be called a display panel, or simply a display board.

[0030] Furthermore, in this specification, etc., a touch sensor is defined as a sensor that is touched by an object to be detected, such as a finger or stylus. It has the function of detecting pressure or approach. It also has the function of detecting its location information. It may have a function to detect touch. Therefore, a touch sensor is one form of an input device. For example, a touch sensor can have a configuration that includes one or more sensor elements.

[0031] Furthermore, in this specification, etc., a substrate having a touch sensor is referred to as a touch sensor panel, or a single It is sometimes referred to as a touch sensor. Also, in this specification, the base of the touch sensor panel A board with connectors such as FPC or TCP attached, or a circuit board. A touch sensor panel module is a device on which an IC is mounted using the COG method or similar. It may be called a sensor module, a touch sensor, or simply a touch sensor.

[0032] In this specification, a touch panel, which is one form of a display device, displays images, etc. on its display surface. The function displays (outputs) information, and detects when an object such as a finger or stylus touches or presses on the display surface. It also has the function of a touch sensor that can detect things like approaching objects. A switch panel is one form of an input / output device.

[0033] A touch panel is, for example, a display panel (or display device) with a touch sensor. It can also be called a display panel (or display device) with a built-in support function.

[0034] A touch panel can also be configured to include a display panel and a touch sensor panel. Alternatively, the display panel may be configured to have a touch sensor function inside or on its surface. It is also possible.

[0035] Furthermore, in this specification, etc., the substrate of the touch panel may include, for example, an FPC or TCP. Products with a connector attached, or ICs mounted on a circuit board using the COG method, etc. When referring to it as a touch panel module, display module, or simply a touch panel, There is.

[0036] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention.

[0037] One aspect of the present invention relates to a plurality of transmissive liquid crystal elements and a transistor electrically connected to the liquid crystal elements. It is a display device equipped with a generator.

[0038] A liquid crystal element has a pair of electrodes and liquid crystal. Both electrodes transmit visible light. One of the pair of electrodes functions as a pixel electrode and is electrically connected to the transistor. The other electrode in a pair functions as a common electrode, supplying a common potential to the other pixels.

[0039] The display area of ​​the display device has a configuration in which multiple pixels are arranged in a matrix. It has two or more subpixels. Each subpixel has one pixel electrode and a selection transistor. It has a transistor that functions and a colored layer.

[0040] For example, one pixel has a first subpixel and a second subpixel. The first subpixel is The first subpixel has a colored layer and a first transistor, and the second subpixel has a second colored layer and a second transistor It has transistors. In this case, the first transistor and the second transistor are each It is positioned to overlap with the first colored layer. More specifically, at least the first transistor The portion of the semiconductor layer of the zista and the second transistor in which a channel can be formed. The minutes are arranged so as to overlap with the first colored layer.

[0041] As a result, the light irradiated onto the first transistor and the second transistor is This becomes light that has passed through the first colored layer. Therefore, the first transistor and the second transistor The ability to make the degree of influence received by each object from light irradiation equal is possible. Therefore, it prevents variations in contrast between adjacent subpixels. It is possible.

[0042] Furthermore, the first colored layer absorbs light on the shorter wavelength side more readily than the second colored layer. It is preferable that the layers are present. In particular, the first colored layer transmits light with longer wavelengths than the second colored layer. Furthermore, it is preferable that the colored layer absorbs other visible light. This allows the first tra Light irradiated onto the transistor and the second transistor through the first colored layer is compared to the incident light. Therefore, since the light absorbed is short wavelength light, the effects of light on these transistors are reduced. This is possible. Alternatively, the light transmitted through the first colored layer can affect each transistor. This allows for the creation of non-reflective light. This enables the realization of an extremely reliable display device.

[0043] Here, if a backlight is provided, the first transistor and the second transistor The backlight is provided such that the first colored layer is positioned between it and the backlight. This is preferable. This allows the backlight to be transmitted to the first transistor and the second transistor. This can suppress the effects of light irradiated onto the object.

[0044] Furthermore, a first coloring layer is placed on the side opposite the backlight (display side), with each transistor in between. A transition may be provided. In this case, ambient light incident on the display device from the display surface side transitions This can suppress the impact on the system.

[0045] The semiconductor layer in which the channels of the first and second transistors are formed contains a semi- Metal oxides (oxide semiconductors (OS) exhibit conductive properties) It is preferable to apply (also known as or). Furthermore, the semiconductor layer has a channel formation region. It is preferable to have a pair of low-resistance regions sandwiching the channel-forming region. This is the part with the highest conductivity, and is an oxide conductor (OC). It can also be said that this makes the region where the semiconductor layer is located transparent to visible light. Because it can be used as a transparent region (also called a transparent region), it can increase the aperture ratio of the display device. It is possible.

[0046] Furthermore, the electrodes and wiring constituting the first and second transistors are visible It is preferable to use a light-transmitting material. In particular, it is preferable to use a metal oxide. For example, the gate electrode, source electrode and drain of the first and second transistors A light-transmitting conductive material can be used for each of the in electrodes. This allows for the use of a light-transmitting conductive material. This allows for a higher aperture ratio in the display device.

[0047] Furthermore, the low-resistance region of the semiconductor layer, the source electrode, and the drain electrode are all transparent. Therefore, these contact areas can also be used as transparent regions, further increasing the aperture ratio. It can be improved to that extent.

[0048] As described above, the channel formation region of the semiconductor layer is arranged in superimposed on the first colored layer. Therefore, the gate electrode is translucent, and light is irradiated into the channel-forming region through the first colored layer. Even if this occurs, the impact on each transistor can be suppressed.

[0049] For example, the first sub-pixel has a pixel electrode consisting of a translucent semiconductor layer, a gate electrode, and a source electrode. The configuration can include parts that overlap with electrodes, drain electrodes, etc.

[0050] Furthermore, each subpixel may have a capacitive element that functions as a retaining capacitor. A pair of electrodes constituting a quantitative element, and wiring electrically connected thereto, etc., are provided with a light-transmitting conductive material. It is preferable to use electrically conductive materials. Each capacitive element is less susceptible to the effects of light, so each sub-pixel It should be placed on top of the colored layer that it possesses.

[0051] Here, a light-transmitting material is used for the source electrode and drain electrode, and a light-shielding material is used for the gate electrode. A configuration using the following materials may also be used. In this case, a light-shielding gate electrode is placed on the display surface side, and It is preferable to place the colored layer 1 on the backlight side of each transistor. Furthermore, the influence of light from the backlight can be suppressed by the first colored layer, and the light incident from the display surface side... The effects of ambient light can be suppressed with a light-shielding gate electrode.

[0052] Furthermore, the wiring (also called bus lines) for supplying electrical signals and potentials to each sub-pixel is While a light-transmitting material may be used, using a light-shielding material such as metal will result in wiring This is preferable because it reduces resistance. For example, a bus line supplied with a gate signal. A wire (also called a gate wire), a wire to which the source signal is supplied (also called a source wire or signal wire) (u) Examples include wiring (also called power lines) that supplies common potential or power supply potential. In this case, the entire area other than the bus line can be made into a transparent region, resulting in an extremely high aperture ratio. It can be achieved.

[0053] Furthermore, a pixel may have three or more subpixels of different colors. In this case, the shortest wavelength... Transistors are not placed in the region that overlaps with the light-transmitting colored layer, but rather superimposed with other colored layers. This configuration allows for the arrangement of transistors, particularly those that transmit light on the longest wavelength side. It is preferable to arrange the transistors of each subpixel in a configuration that is superimposed on the colored layer. stomach.

[0054] For example, if a pixel has subpixels corresponding to three colors of light, red, green and blue, then each subpixel The transistors in each have a colored layer other than blue, i.e., a red or green colored layer. They can be placed on top of each other. In particular, three transistors can be placed on top of the red colored layer. It is preferable to place it there.

[0055] Below, we will explain more specific examples with reference to the diagrams.

[0056] [Configuration Example 1] Figure 1(A) shows a schematic perspective view of the display device 10. The display device 10 consists of a substrate 11 and a substrate 1 It has a structure in which two are bonded together. In Figure 1(A), the substrate 12 is shown by a dashed line. Figure 1(A) corresponds to a schematic perspective view as seen from the opposite side of the display surface. That is, The display device 10 has the circuit board 11 side as the display surface side.

[0057] The display device 10 has a display unit 13, a circuit 14, wiring 15, etc. The circuit board 11 has, for example The display unit 13 includes a conductive layer 21, a circuit 14, and wiring 15, which function as pixel electrodes. It is mounted. Also, Figure 1(A) shows an example where IC17 and FPC16 are mounted on substrate 11. This indicates that the configuration shown in Figure 1(A) can also be called a display module. ru.

[0058] Circuit 14 can be, for example, a circuit that functions as a scan line driving circuit.

[0059] The wiring 15 has the function of supplying signals and power to the display unit 13 and the circuit 14. Power is supplied from an external source to wiring 15 via FPC16, or from IC17 to wiring 15. It is supplied to 5.

[0060] In Figure 1(A), the substrate 11 is coated with I using the COG (Chip On Glass) method, etc. This shows an example where C17 is provided. IC17 is, for example, a signal line drive circuit. An IC with the function of can be applied. Note that a configuration without IC17 is also possible. C17 is mounted on FPC16 using the COF (Chip On Film) method, etc. That's fine.

[0061] Figure 1(A) shows a magnified view of a part of the display unit 13. The display unit 13 has multiple tables The conductive layers 21 of the display element are arranged in a matrix. The conductive layers 21 are, for example, pixels. It functions as an electrode.

[0062] [Example of cross-sectional configuration] Figure 1(B) shows an example of a cross-section corresponding to the cutting line A1-A2 in Figure 1(A). B) shows a cross-section of a region containing three adjacent pixels (sub-pixels). This shows an example where a transmissive liquid crystal element 20 is applied as the display element. Figure 1(B) In this configuration, the side with the circuit board 11 becomes the display side.

[0063] The display device 10 has a configuration in which a liquid crystal 22 is sandwiched between substrates 11 and 12. The liquid crystal element 20 has a conductive layer 21 provided on the substrate 11 side and a conductive layer provided on the substrate 12 side. It has an electrical layer 23 and a liquid crystal 22 sandwiched between them. Also, the liquid crystal 22 and the conductive layer 21 An alignment film 24a is provided between them, and an alignment film 24b is provided between the liquid crystal 22 and the conductive layer 23. It is.

[0064] The conductive layer 21 functions as a pixel electrode. The conductive layer 23 functions as a common electrode, etc. Furthermore, both conductive layer 21 and conductive layer 23 have the function of transmitting visible light. Furthermore, the liquid crystal element 20 is a transmissive liquid crystal element.

[0065] Figure 1(B) clearly shows the three liquid crystal elements 20. Each of the liquid crystal elements 20 is colored It is superimposed on layer 41R, colored layer 41G, or colored layer 41B. Also, between the two colored layers A light-shielding layer 42 is provided. An insulating layer 26 is provided covering each colored layer and the light-shielding layer 42. A conductive layer 23 is provided covering the insulating layer 26. Furthermore, the light-shielding layer 42 is provided for the transistor 30 It is preferable that the material is also placed in overlapping positions at the contact area between R and the conductive layer 21.

[0066] For example, the colored layer 41R transmits red light and absorbs visible light of other wavelengths. The colored layer 41G transmits green light and absorbs visible light of other wavelengths. B transmits blue light and absorbs light of other wavelengths. (Colored layer 41R, Colored layer 41G) Light 25R, light 25G, and light 25B transmitted through the colored layer 41B are, respectively, visible The light may have two or more peaks in the optical region, but it may have a single peak in the visible light region. It is preferable that the colored layer 41R transmits the longest wavelength light among the three colored layers. It is a layer that can absorb light of other wavelengths.

[0067] The colors of light transmitted through each of the colored layers 41R, 41G, and 41B are as follows: This is not the only example.

[0068] Figure 1(B) shows the area where the colored layer 41R is provided as the display area 13R and the colored layer 41G The area where the display area 13G is provided, and the area where the colored layer 41B is provided, is a display area It is shown as 13B. In addition, a light-shielding layer 42 is provided between the display areas of different colors. It is preferable that it has an optical region.

[0069] Polarizing plate 39a is positioned outside the substrate 11, and polarizing plate 39 is positioned outside the substrate 12. b is positioned. Furthermore, the backlight unit 90 is located outside the polarizing plate 39b. It is provided. In the display device 10 shown in Figure 1(B), the substrate 11 side is the display surface side.

[0070] On the substrate 11 are transistors 30R, 30G, and 30B. Each of these is provided. Each transistor is, for example, a selection transistor for a sub-pixel. It functions as a transistor. Transistor 30R is electrically connected to the conductive layer 21 which overlaps with the colored layer 41R. Connect. Transistor 30G is electrically connected to the conductive layer 21 which overlaps with the colored layer 41G. Transistor 30B is electrically connected to the conductive layer 21 which overlaps with the colored layer 41B.

[0071] Figure 1(C) shows transistors 30R, 30G, and 30B. An enlarged view of the applicable transistor 30 is shown. Transistor shown in Figure 1(C) 30 is a transistor with a so-called bottom-gate channel etch structure. The 30 consists of a conductive layer 31 that functions as a gate electrode and an insulating layer that functions as a gate insulating layer. 34, a semiconductor layer 32, and a pair of conductive layers 33 that function as source and drain electrodes. The semiconductor layer 32 has the portion that overlaps with the conductive layer 31 as a channel formation region. It functions. The semiconductor layer 32 and the conductive layer 33 are provided in contact with each other.

[0072] Furthermore, the conductive layer 21, which functions as a pixel electrode, is provided on the insulating layer 81. The insulating layer 81 is electrically connected to the conductive layer 33 through the provided opening. It is preferable that it functions as a layer.

[0073] Here, the conductive layer 31, semiconductor layer 32, conductive layer 33, and insulating layer 34 are each resistant to visible light. It is preferable that it is translucent. This allows the material to be translucent, as shown in Figures 1(B) and (C). Light 25R can pass through the transistor 30. Transistor 30, liquid crystal element 20, Furthermore, by stacking the colored layer 41R, the region where the transistor 30 is located becomes transparent. It can function as a 40t overflow area and be used as part of the display area. Tables with a high transparency ratio (i.e., the ratio of the area of ​​the transparent area per unit area within the display area) A display device can be realized.

[0074] As shown in Figure 1(B), multiple transistors constituting a pixel are connected to a single colored layer 41R By arranging them in a stacked configuration, each transistor receives light of the same wavelength and intensity (25R). The transistors will be irradiated with light 25R, affecting their electrical characteristics. When affected by factors such as the above, the degree of that effect can be made equivalent. This prevents differences in contrast between subpixels.

[0075] Furthermore, the light 25R transmitted through the colored layer 41R has the longest wavelength compared to the other light (i.e.) Because it is low-energy light and does not contain light with wavelengths shorter than red, it is used in semiconductor layer 32, etc. It can be said that this is the light that is least absorbed. Therefore, light 25R is present in the semiconductor layer 32 of each transistor. Even with a transparent configuration, a highly reliable display device can be realized.

[0076] Furthermore, as shown in the transistor 30a in Figure 2, the conductive layer that functions as the gate electrode is A conductive layer 31a that blocks visible light may also be applied. In this way, the display side of the semiconductor layer 32 By blocking light, it prevents ambient light incident from the display surface side from reaching the semiconductor layer 32. This makes it possible to realize a more reliable display device. On the other hand, at this time, the conductive layer 31a The provided portion functions as a light-shielding area 40s, therefore the configuration shown in Figure 1(C) is more open. This can increase the percentage of votes.

[0077] The above is an explanation of Configuration Example 1.

[0078] [Configuration Example 2] The following describes more specific examples of display devices.

[0079] [Pixel configuration example 2-1] Figure 3(A) shows one pixel 40 on the opposite side from the display surface (i.e., the backlight unit). This shows a schematic top view as seen from the T90 side. Pixel 40 is sub-pixel 40G, sub-pixel It has 40R and sub-pixels 40B. Pixel 40 has wiring 51 that functions as a gate line and Wires 52G, 52R, and 52B, which function as source lines respectively, and power lines Wiring 53, which functions as such, is connected.

[0080] Sub-pixels 40G, 40R, and 40B each have a colored layer 41G and a colored layer A colored layer 41R, or colored layer 41B, is provided. Here, each colored layer is shown by a dashed line. Furthermore, in Figure 3(A), some components (such as the conductive layer 21) are omitted. .

[0081] In the sub-pixel 40R, in the region overlapping with the colored layer 41R, transistor 30G, transistor A sta 30R, a transistor 30B, and a capacitive element 60R are provided. The conductive and semiconductor layers constituting the capacitor and capacitive element 60R are made of materials that transmit visible light. It is preferable that this is the case.

[0082] Figure 3(A) shows the transistors 30G, 30R, and of the pixel 40. As an example of applying a bottom-gate transistor as the transistor 30B, Yes, they are.

[0083] Sub-pixels 40G and 40B are each equipped with capacitive elements 60G or 60B, respectively. Each capacitive element is provided in a region that overlaps with the colored layer 41G or the colored layer 41B. Each capacitive element, like the capacitive element 60R provided in the sub-pixel 40R, emits visible light. It is preferable that the elements transmit light. The other may be provided in a region that overlaps with the colored layer 41R of the sub-pixel 40R. The element 60R is provided in a region that overlaps with at least one of the colored layer 41G and the colored layer 41B. It's fine if you do that.

[0084] In pixel 40, wiring 51, wiring 52R, wiring 52G, wiring 52B, and wiring 53 are available. By using a material that blocks visible light, and using a material that transmits visible light in the other layers, Figure 4 shows that pixel 40 has a light-shielding region 40s that blocks visible light and a transparent region that transmits visible light. An example is shown where the overload region of 40t is clearly separated. In this way, a bus line is provided. Because almost all areas outside the designated region can be made into a transparent region of 40t, conventional display devices Compared to that, the aperture ratio can be significantly improved.

[0085] Figure 3(B) shows the circuit diagram of pixel 40 corresponding to Figure 3(A). In addition to the above configuration, the liquid crystal element 20R, liquid crystal element 20G, and liquid crystal element 20B are explicitly specified. Yes, they are.

[0086] Transistor 30R has its gate electrically connected to wiring 51, and its source or drain is either connected or connected. One end is electrically connected to wiring 52R, and the other end is connected to one electrode of capacitive element 60R, and liquid crystal. It is electrically connected to one electrode (pixel electrode) of element 20R.

[0087] Transistor 30G has its gate electrically connected to wiring 51, and its source or drain. One end crosses wiring 52R and is electrically connected to wiring 52G, while the other end crosses wiring 52R and wiring It intersects with line 52G and electrically connects with one electrode of the capacitive element 60G and the pixel electrode of the liquid crystal element 20G. Connected.

[0088] Transistor 30B has its gate electrically connected to wiring 51, and its source or drain. One end is electrically connected to wiring 52B, and the other end is connected to one electrode of capacitive element 60B and liquid crystal element It is electrically connected to the pixel electrode of sub-20B.

[0089] Furthermore, the other electrode of each of the capacitive elements 60R, 60G, and 60B is It is electrically connected to wiring 53.

[0090] [Cross-sectional configuration example 2-1] Figure 5 shows cross-sections along the cutting lines B1-B2 and C1-C2 shown in Figure 3(A). The cut lines B1-B2 are wiring 52R, transistor 30R, capacitive element 60R, and wiring. The line passes through 53, and the cut line C1-C2 is at transistor 30G, intersection 55, and capacitance element This is the wire that passes through sub-60G and wiring 53, etc.

[0091] Note that the parts described in Configuration Example 1 and Figure 1(B) above will be omitted from the following explanation. In addition, unless otherwise specified, the layers obtained by processing the same film are treated as follows. We will use the symbol "ji" to explain this.

[0092] Transistors 30R and 30G are bottom gate transistors, respectively. It is a sta. Also, the capacitive element 60R etc. consists of a conductive layer 31, a conductive layer 33, and a position between them. It is composed of a part of the insulating layer 34 that is placed on top of it.

[0093] The conductive layer 33 that constitutes the source electrode and drain electrode of each transistor, and the wiring 52R, etc. The conductive layer that constitutes it is formed without an insulating layer in between. Therefore, for example, Wiring 52R is provided in contact with one of the top and side surfaces of the source or drain of 30R. These are electrically connected as a result.

[0094] Furthermore, the conductive layer 31 that constitutes the gate electrode of each transistor and the wiring 51 (not shown) The conductive layer that constitutes the wiring 53, etc., is formed without an insulating layer in between. For example, capacitance Wiring 53 is provided in contact with the upper and side surfaces of the conductive layer 31 that constitutes element 60R. These are electrically connected.

[0095] Furthermore, in Figure 5, an insulating layer 82 is provided covering the transistor 30R, etc., and on the insulating layer 82 An insulating layer 81, which functions as a planarizing film, is provided. The insulating layer 82 is a transistor It is preferable that it has the function of a protective film that suppresses the diffusion of impurities, etc., into 30R, etc. For example, using an inorganic insulating material for the insulating layer 82 and an organic insulating material for the insulating layer 81. It is possible.

[0096] The conductive layer 21 is provided in the insulating layer 81 and insulating layer 82 in the region that overlaps with the capacitive element 60R. The conductive layer 33 is electrically connected through the opening. By overlapping the extension and the capacitive element 60R, it is possible to reduce the pixel area. This enables the creation of high-definition display devices.

[0097] In the portion overlapping with the connection between conductive layer 21 and conductive layer 33, the cell gap of the liquid crystal element 20 is It may be larger than other parts. Also, at the connection point, the upper surface of the conductive layer 21 has an uneven shape. Because it is easy for this to form, the initial orientation of the liquid crystal 22 differs from that of other parts, causing light leakage. This can occur. Light leakage leads to a decrease in contrast, as shown in Figure 5. It is preferable to place the light-shielding layer 42 in the area that overlaps with the connection portion. Therefore, in cases where the LCD can be driven sufficiently, the light-shielding layer 42 is not provided in this part, and the display area Using it as part of a larger structure is preferable because it increases the aperture ratio.

[0098] Here, the conductive layers constituting wiring 52G and wiring 52R and the conductive layer 33 are insulated from each other. Because they lack a margin, crossing them will cause an electrical short circuit. At the intersection 55, the two conductive layers 33 sandwiching the wiring 52G and wiring 52R are, The conductive layer 31 is electrically connected to the insulating layer 34 through an opening provided in the insulating layer 34. Wiring 52G and wiring 52R have overlapping portions with each other via the insulating layer 34. In other words, the intersection 55 can also be said to have a bridge structure.

[0099] At the intersection 55, electrical noise from wiring 52G and wiring 52R is superimposed on it. This can be transmitted to the conductive layer 31 and may affect the display of the liquid crystal element 20G. However, Pixel 40 has a configuration in which transistor 30G is not placed in sub-pixel 40G, therefore, The area of ​​element 60G can be made larger than that of the capacitive element 60R. As a result, This allows for a configuration that is less susceptible to noise. Furthermore, the capacitive element 60G transmits visible light. Therefore, even if this area is increased, a high aperture ratio can be maintained. Also, As a way to further reduce the effects of the wind, the intersection of wiring 52G or wiring 52R and conductive layer 31 It is preferable to minimize the area of ​​the difference portion and reduce the volume between them.

[0100] The above is an explanation of example 2-1 of the cross-sectional configuration.

[0101] [Pixel configuration example 2-2] Figure 6 shows a schematic top view different from that of Figure 3(A). The circuit diagram is shown in Figure 3(B). This can be used as a reference.

[0102] The configuration shown in Figure 6 consists of transistors 30R, 30G, and 30B. These are examples of cases where a top-gate transistor structure is applied.

[0103] [Cross-sectional configuration example 2-2] Figure 7 shows schematic cross-sectional views corresponding to the cutting lines B3-B4 and C3-C4 in Figure 6. .

[0104] For example, transistor 30R has an insulating layer on semiconductor layer 32 that functions as a gate insulating layer. 34 and a conductive layer 31 that functions as a gate electrode are stacked and provided. An insulating layer 82 is provided covering them, and on the insulating layer 82 are the source electrode and drain electrode. A functional conductive layer 33 is provided. The semiconductor layer 32 is located in a region that does not overlap with the conductive layer 31. , has a low-resistance region 32a. The conductive layer 33 has a low resistance through an opening provided in the insulating layer 82. It is electrically connected to the anti-region 32a.

[0105] At the intersection 55, the pair of conductive layers 33 sandwiching wiring 52G and wiring 52R are wires 52 G and wiring 52R are electrically connected to the conductive layer 31 which intersects with the insulating layer 82.

[0106] The region of the semiconductor layer 32 that overlaps with the conductive layer 31 functions as a channel-forming region. The low-resistance region 32a is formed on either side of the channel formation region. , a region with a higher carrier concentration than the channel-forming region, or a region with a higher impurity concentration This is possible. When an oxide semiconductor (OS) is used for the semiconductor layer 32, the low-resistance region 3 2a can be called an oxide conductor (OC).

[0107] [Pixel configuration example 2-3] Figure 8 shows a schematic top view with some differences from Figure 6. The circuit diagram is shown in Figure 3. (B) can be used as an alternative.

[0108] The configuration shown in Figure 8, compared to the configuration shown in Figure 6, places a portion of the low-resistance region 32a within the sub-pixel. The main difference lies in the fact that it is used as wiring.

[0109] [Cross-sectional configuration example 2-3] Figure 9 shows schematic cross-sectional views corresponding to the cutting lines B5-B6 and C5-C6 in Figure 8. .

[0110] For example, if we focus on transistor 30R, we see a part of the low-resistance region 32a and wiring 52R. However, they are electrically connected without going through the conductive layer 33.

[0111] Furthermore, focusing on transistor 30G, a portion of the low-resistance region 32a is connected to wiring 52R and It intersects with wiring 52G and is electrically connected to the conductive layer 33 that constitutes one electrode of the capacitive element 60G. It is being done.

[0112] In this way, a portion of the low-resistance region 32a of the semiconductor layer 32 is used as wiring within the pixel. As a result, the number of contact parts can be reduced compared to the configurations shown in Figures 6 and 7, for example. Yes, it is possible. Therefore, it becomes possible to create higher-resolution display devices.

[0113] [Variation] In the above, the liquid crystal element is a vertical electric field type in which a pair of electrodes sandwiching the liquid crystal are arranged vertically. While an example of a liquid crystal element is shown, the configuration of a liquid crystal element is not limited to this, and various types of liquid crystal elements exist. This can be applied.

[0114] Figure 10(A) shows the FFS (Fringe Field Switching) mode. A schematic cross-sectional view of a display device having a liquid crystal element to which the above is applied is shown.

[0115] The liquid crystal element 20R, etc., has a conductive layer 21 that functions as a pixel electrode, and an insulating layer 83 between the conductive layer 21 and the insulating layer 83. It has a conductive layer 23 that overlaps via a slit-shaped or comb-shaped upper surface. It has a shape.

[0116] Furthermore, in this configuration, capacitance is formed in the portion where the conductive layer 21 and the conductive layer 23 overlap. This can be used as a holding capacitance. Therefore, a configuration without capacitive elements 60R, etc. is adopted. This reduces the area occupied by 40 pixels, enabling the creation of high-definition display devices.

[0117] In Figure 10(A), the conductive layer 21, which functions as a pixel electrode, is located on the liquid crystal 22 side. However, as shown in Figure 10(B), the conductive layer 23, which functions as a common electrode, is on the liquid crystal 22 side. It may also be configured to be located in this position.

[0118] Note that the configuration of transistors 30R, 30G, and the crossover 55 is not limited to this. Furthermore, the configurations exemplified above can be replaced as appropriate.

[0119] [Configuration Example 3] The above example shows the colored layer etc. placed on the substrate 12 side, but what if it is placed on the substrate 11 side? This simplifies the configuration of the substrate 12. Also, the bonding of substrate 11 and substrate 12 Since high positional accuracy is no longer required during assembly, productivity can be increased. ru.

[0120] [Cross-sectional configuration example 3-1] Figure 11 shows a schematic cross-sectional diagram illustrating the configuration shown below. The configuration shown in Figure 11 is the same as the configuration shown in Figure 5. In comparison, the main difference is that the colored layer 41R and colored layer 41G, etc., are provided on the substrate 11 side. Yes, they are.

[0121] In Figure 11, the colored layer 41R and the colored layer 41G are located between the insulating layer 82 and the insulating layer 81. It is located. The colored layer 41R is transistor 30G, transistor 30R, transistor It is provided covering elements such as TA30B (not shown) and capacitive element 60R. Also, the colored layer 41 G is provided covering the capacitive element 60G.

[0122] A conductive layer 23 and an alignment film 24b are provided on the substrate 11 side of the substrate 12. Both can be applied across the entire display area and do not require fine processing, thus the colored layer 4 The structure can be simplified compared to forming a 1R, etc.

[0123] Here, as described above, the conductive layer 21 that functions as a pixel electrode and the other conductive layers Since the tact section can be a source of light leakage, it is preferable to cover it with a light-shielding layer. However, if a light-shielding layer is provided on the substrate 12 side as shown in Figure 5, then the substrate 11 and the substrate 12 During the bonding process, high positional accuracy is required, so the effect of disposing the coloring layer on the substrate 11 side is diminished. Therefore, it is preferable to dispose the light-shielding layer on the substrate 11 side.

[0124] In FIG. 11, a light-shielding layer 57 having light-shielding properties is disposed at a position overlapping with the contact portion. The light-shielding layer 57 can be formed by processing the same conductive film as the wiring 53, the wiring 51, etc., for example, so that it can be formed without increasing the number of processes.

[0125] When the light-shielding layer 57 has conductivity, the light-shielding layer 57 can be formed in an island shape and can be configured to be electrically insulated from other wirings and electrodes. That is, the light-shielding layer 57 can be in an electrically floating state. Alternatively, for example, the light-shielding layer 57 can be made to function as one electrode of the capacitor element 60R. Alternatively, by overlapping the contact portion with a part of the wiring 51, a part of the wiring 51 can also serve as the light-shielding layer 57.

[0126] In FIG. 12, an example having a light-shielding layer 58 is shown instead of the light-shielding layer 57 shown in FIG. 11.

[0127] The light-shielding layer 58 is provided above the contact portion of the conductive layer 21. The light-shielding layer 58 has a function of shielding visible light or absorbing at least a part of visible light.

[0128] The light-shielding layer 58 can also function as a gap spacer for maintaining the distance between the substrate 11 and the substrate 12. Therefore, when an external force such as pressing the display surface or bending the display device is applied, or when the display device is vibrated, the cell gap of the liquid crystal element 20R, etc. ​​​​​​​​​​Because it is less prone to change, interference and color changes due to changes in cell gaps are less likely to occur. stomach.

[0129] Furthermore, the light-shielding layer 58 prevents the conductive layer 21 and the conductive layer 23 from being electrically short-circuited. Preferably, at least its upper surface is insulating.

[0130] For example, the light-shielding layer 58 may be made of a resin containing pigments, dyes, or carbon black. It is possible to do so. Furthermore, if the resin is conductive, after forming the resin... It may also have a two-layer structure coated with an insulating film. Furthermore, the insulating properties of the alignment film 24a are sufficient. When the height is high and the light-shielding layer 58 is sufficiently covered, the upper surface of the light-shielding layer 58 is conductive. That's fine.

[0131] The light-shielding layer 58 can also be provided on the substrate 12 side, but in that case, substrate 11 and substrate 1 When bonding parts 2 together, high positional accuracy is required. Therefore, as shown in Figure 12... Therefore, it is preferable to provide the light-shielding layer 58 on the substrate 11 side.

[0132] [Configuration Example 4] In Figures 3(A) and (B), one gate line and three source lines are connected to pixel 40. The configuration shown is not limited to this. In the following example, three gate lines are connected to pixel 40. An example configuration is shown.

[0133] [Pixel configuration example 4] The pixels 40 shown in Figure 13(A) are wires 51G and 5, respectively, which function as gate lines. 1R, and wiring 51B, wiring 52 which functions as a source line, and wiring which functions as a power line Line 53 is connected.

[0134] Also, in Fig. 13(A), similar to Fig. 3(A), an example of applying a transistor with a bottom gate structure to each transistor is shown. is shown.

[0135] Transistors 30R, 30G, and 30B, and capacitance element 6 0R is arranged overlapping the coloring layer 41R. Also, capacitance elements 60G and 60B are respectively arranged overlapping the coloring layer 41G and the coloring layer 41B.

[0136] Fig. 13(B) shows a circuit diagram of pixel 40 corresponding to Fig. 13(A).

[0137] For transistor 30R, the gate is electrically connected to wiring 51R, one of the source or drain is electrically connected to wiring 52, and the other is electrically connected to one electrode of capacitance element 60R and one electrode (pixel electrode) of liquid crystal element 20R.

[0138] For transistor 30G, the gate intersects wiring 51R and is electrically connected to wiring 51G, one of the source or drain is electrically connected to wiring 52, and the other intersects wiring 51R and wiring 51G, and is electrically connected to one electrode of capacitance element 60G and the pixel electrode of liquid crystal element 20G. is connected. <{

[0139] For transistor 30B, the gate is electrically connected to wiring 51B, one of the source or drain is electrically connected to wiring 52, and the other is electrically connected to one electrode of capacitance element 60B and the pixel electrode of liquid crystal element 20B.

[0140] Also, the other electrodes of capacitance elements 60R, 60G, and 60B are electrically connected to wiring 53.

[0141] [Configuration Example 5] In the above, either the source or drain of transistor 30G, or the gate, An example with an intersection where lines cross is shown. At this intersection, electrical noise from the wiring Therefore, a configuration without intersections is preferable, as this may affect the display. .

[0142] [Pixel configuration example 5-1] The configuration shown in Figure 14(A) is different from the configuration shown in Figure 3(A) in that it uses a 30G transistor. The fact that wiring 52R is provided between transistors 30B, and that there is no intersection 55. The main differences are in these aspects.

[0143] In Figure 14(A), transistor 30R and transistor 52B are connected between wire 52R and wire 52B. 30B is placed, and transistor 30G is positioned between wires 52R and 52G. Furthermore, the wiring 52R has a portion that overlaps with the colored layer 41R.

[0144] In Figure 14(A), the wiring 52R crosses the region where the colored layer 41R is provided in the longitudinal direction. They are arranged in such a way. When wiring 52R has light-shielding properties, the display area of ​​sub-pixel 40R This will result in a non-visible region (light-shielding region) extending in the vertical direction. Therefore, the colored layer It is preferable to increase the lateral width of 41R to take into account the width of wiring 52R.

[0145] This configuration eliminates the need for intersections, as shown in Figure 3(A), etc. In comparison, wiring 52G, wiring 52R, and wiring 52B can be placed further apart. Therefore, parasitic capacitance between wires can be reduced, making it suitable for displays with higher frame rates. It can be said that it is a success.

[0146] Figure 14(B) shows the circuit diagram of pixel 40, which corresponds to Figure 14(A).

[0147] Transistor 30R has its gate electrically connected to wiring 51, and its source or drain is either connected or connected. One end is electrically connected to wiring 52R, and the other end is connected to one electrode of capacitive element 60R, and liquid crystal. It is electrically connected to one electrode (pixel electrode) of element 20R.

[0148] Transistor 30G has its gate electrically connected to wiring 51, and its source or drain. One end is electrically connected to wiring 52G, and the other end is connected to one electrode of capacitive element 60G and liquid crystal element It is electrically connected to the pixel electrodes of the sub-20G.

[0149] Transistor 30B has its gate electrically connected to wiring 51, and its source or drain. One end is electrically connected to wiring 52B, and the other end is connected to one electrode of capacitive element 60B and liquid crystal element It is electrically connected to the pixel electrode of sub-20B.

[0150] [Pixel configuration example 5-2] Figure 15(A) shows the circuit diagram of the configuration described below. Figure 15(A) has six sub-diagrams. This shows a pixel unit 40U containing elements. The pixel units 40U are arranged in a matrix. This allows the display area to be configured.

[0151] The pixel unit 40U shown in Figure 15(A) consists of one wiring 52R and the other wiring 52 from left to right. Sub-pixels 40R and 40G are arranged between G, and wiring 52B is adjacent to wiring 52G. A sub-pixel 40B and sub-pixel 40R are provided, and are arranged between the wiring 52B and wiring 52R. Wiring 52G is provided adjacent to wiring 52R, and a sub-pixel is located between wiring 52G and wiring 52B. It has 40G pixels and 40B sub-pixels.

[0152] Two adjacent subpixels each have at least one transistor. These two transistors detect one of the two coloring layers of the two subpixels. They are arranged so as to overlap with each other. At this time, of the two colored layers, the one that absorbs shorter wavelength light... It is preferable to arrange the transistors on top of the colored layer.

[0153] For example, if colored layer 41R is red, colored layer 41G is green, and colored layer 41B is blue, Let's consider the case where each is a transparent colored layer. In the case of a combination of sub-pixel 40R and sub-pixel 40G. In the case of a combination of sub-pixel 40R and sub-pixel 40B, both are colored with a red color layer 4 Two transistors are placed in conjunction with 1R. On the other hand, the combination of sub-pixel 40G and sub-pixel 40B In the case of a combined configuration, the two transistors are placed on top of the green colored layer 41G.

[0154] For example, in the circuit diagram shown in Figure 15(A), each colored layer 41R, colored layer 41G, and color The arrangement of layer 41B will be as shown in Figure 15(B).

[0155] [Pixel configuration example 5-3] The pixel 40 shown in Figure 16(A) has four sub-pixels, including the sub-pixel 40W. 0 has two gate wires (wiring 51a, wiring 51b) and two source wires (wiring 52a, wiring 51b). Line 52b), one power line (wiring 53) is connected. Pixel 40 is connected to wiring 51a, In the region enclosed by line 51b, wiring 52a, and wiring 52b, four subpixels are arranged in two vertical directions. It has a configuration in which two are arranged horizontally.

[0156] Sub-pixel 40W is, for example, a sub-pixel that emits white light. Therefore, sub-pixel 40W The structure can be configured without a colored layer.

[0157] Pixel 40 has at least four transistors. The four transistors are each sub-pixel It functions as a basic selection transistor. These four transistors overlap with the colored layer 41R. It will be positioned in a certain location.

[0158] For example, in the circuit diagram shown in Figure 16(A), the arrangement of the colored layers is as shown in Figure 16(B). This is the result. The sub-pixel 40W region does not have a colored layer.

[0159] The above describes the various configuration examples for the display device.

[0160] [Regarding each component] The following sections will explain each of the components listed above.

[0161] 〔substrate〕 A substrate having a flat surface can be used for the display panel. A material that transmits light is used for the substrate from which the light is extracted. For example, glass, quartz, ceramic Materials such as MIC, sapphire, and organic resins can be used.

[0162] By using a thin substrate, the display panel can be made lighter and thinner. Furthermore, by using a substrate with a thickness sufficient to be flexible, a flexible display panel can be realized. This can be achieved. Alternatively, a thin glass or similar material with sufficient flexibility can be used as the substrate. Alternatively, a composite material may be used in which glass and resin materials are bonded together by an adhesive layer.

[0163] [Transistor] A transistor consists of a conductive layer that functions as the gate electrode, a semiconductor layer, and a source electrode. A functional conductive layer, a conductive layer that functions as a drain electrode, and a gate insulating layer that functions as a gate insulating layer. It has an insulating layer.

[0164] The structure of the transistor in the display device according to one aspect of the present invention is not particularly limited. For example, it could be a planar transistor or a staggered transistor. It may also be an inverse staggered transistor. Alternatively, it can be a top-gate or bottom-gate transistor. Any type of transistor structure may be used. Alternatively, gate electrodes may be provided above and below the channel. It's okay to be kicked.

[0165] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, monocrystalline semiconductors, or semiconductors with some crystals) Any semiconductor having regions may be used. If a crystalline semiconductor is used, This is preferable because it suppresses the deterioration of the transistor characteristics.

[0166] Furthermore, semiconductor materials used in transistors have an energy gap of 2 eV or more. Preferably, a metal oxide with a voltage of 2.5 eV or higher, more preferably 3 eV or higher, can be used. Yes, it is possible. Typical examples include metal oxides containing indium, such as CAC, which will be discussed later. - You can use an operating system, etc.

[0167] Using metal oxides with a wider band gap and lower carrier density than silicon Due to its low off-current, the transistor can draw power from a capacitive element connected in series with it. It is possible to retain the accumulated charge over a long period of time.

[0168] The semiconductor layer is made of, for example, indium, zinc, and M(aluminum, titanium, gallium, galvanic acid). Lumanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium or The film can be represented as an In-M-Zn oxide containing metals such as hafnium. .

[0169] When the metal oxide constituting the semiconductor layer is an In-M-Zn system oxide, In-M-Zn oxidation The atomic ratio of metal elements in a sputtering target used to deposit thin films is In≧M It is preferable that Zn≧M is satisfied. In terms of atomic ratio, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In :M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4. 1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5: A ratio of 1:8 is preferred. The atomic ratio of the semiconductor layer to be formed is determined by the sputtering process described above. This includes a variation of plus or minus 40% in the atomic ratio of metal elements contained in the ring target.

[0170] The bottom-gate transistor exemplified in this embodiment can reduce the manufacturing process. This is preferable. Furthermore, by using a metal oxide at this time, it can be formed at a lower temperature than polycrystalline silicon. It is possible to use materials with low heat resistance as wiring and electrode materials below the semiconductor layer, and as substrate materials. Because it is possible to use this, the range of material selection can be broadened. For example, extremely large surface A stacked glass substrate or the like can be suitably used.

[0171] A metal oxide film with a low carrier density is used as the semiconductor layer. For example, the semiconductor layer is: The carrier density is 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3 or less, even more preferably 1×10 11 / cm 3 or less, still more preferably 1×10 10 / cm 3 or less, and less than 1×10 -9 / cm 3 Carrier density metal oxides can be used. Such metal oxides are called high-purity intrinsic or substantially high-purity intrinsic metal oxides. As a result, the impurity concentration is low and the density of defect levels is low, so it can be said that they are metal oxides with stable characteristics.

[0172] <~ Note that it is not limited to these, and those with an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the transistor. Also, in order to obtain the required semiconductor characteristics of the transistor, it is preferable to make the carrier density, impurity concentration, defect density, atomic number ratio of metal elements and oxygen, interatomic distance, density, etc. of the semiconductor layer appropriate.

[0173] In the metal oxide constituting the semiconductor layer, if silicon or carbon, which is one of the Group 14 elements, is contained, the oxygen deficiency in the semiconductor layer increases and it becomes n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is set to 2× 10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0174] Furthermore, alkali metals and alkaline earth metals produce carriers when they combine with metal oxides. This can occur, and the off-current of the transistor may increase. Alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in the body layer The concentration of 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atom / cm 3 Do the following:

[0175] Furthermore, if nitrogen is present in the metal oxide that makes up the semiconductor layer, the electrons, which are carriers, This occurs, increasing carrier density and making it more likely to become n-type. As a result, nitrogen-containing metal oxidation occurs. Transistors made of materials tend to exhibit normally-on characteristics. Therefore, in the semiconductor layer The nitrogen concentration obtained by secondary ion mass spectrometry is 5 × 10⁻⁶ 18 atoms / cm 3 below It is preferable to do so.

[0176] Oxide semiconductors are divided into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As a single-crystal oxide semiconductor, CAAC-OS (c-axis-aligned crystal Stirrine oxide semiconductor, polycrystalline oxide semiconductor, nc-OS(nanocrystalline oxide semiconductor r), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like Examples include oxide semiconductors and amorphous oxide semiconductors.

[0177] Furthermore, the semiconductor layer of the transistor disclosed in one aspect of the present invention includes CAC-OS(Cl Loud-Aligned Composite oxide semiconductor (r) may also be used.

[0178] Note that, in one aspect of the present invention, the semiconductor layer of the transistor can preferably use the above-described non-single crystal oxide semiconductor or CAC-OS. Further, as the non-single crystal oxide semiconductor nc-OS or CAAC-OS can preferably be used.

[0179] Note that, in one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. By using CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

[0180] Note that the semiconductor layer may be a mixed film having two or more of the regions of CAAC-OS, polycrystalline oxide semiconductor, nc-OS region, pseudo-amorphous oxide semiconductor region, and amorphous oxide semiconductor region. The mixed film may have, for example, a single-layer structure or a laminated structure including any two or more of the above-described regions.

[0181] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Loud-Aligned Composite)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described. [[ID=...]]

[0182] CAC-OS is, for example, a composition in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. Note that, hereinafter, in the metal oxide, one or more metal elements are unevenly distributed ​​​​​​​The region containing the metal element is 0.5 nm to 10 nm, preferably 1 nm or less. When particles smaller than 2 nm or near that size are mixed, the result is described as a mosaic or patchy appearance. Also said.

[0183] Furthermore, it is preferable that the metal oxide contains at least indium. In particular, indium It is preferable to include zinc. In addition to these, aluminum, gallium, and t Thorium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, ginger Lumanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Contains one or more elements selected from tantalum, tungsten, or magnesium. It's okay if they're born.

[0184] For example, CAC-OS in In-Ga-Zn oxide (In- Ga-Zn oxide may also be specifically referred to as CAC-IGZO. ) is indium oxide (hereinafter referred to as InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc Oxides (hereinafter, In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (hereinafter referred to as GaO X3 (Let X3 be a real number greater than 0) ) or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, oyo Let Z4 be a real number greater than 0. The material separates into parts, creating a mosaic pattern. It becomes a mosaic-like InO X1 , or In X2 Zn Y2 O Z2However, it is uniformly distributed within the membrane. This configuration (hereinafter also referred to as cloud-based) is as follows.

[0185] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a composition in which a region is the main component and a region is mixed. In this specification, for example, the atomic ratio of In to element M in the first region. However, the first region is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher in this region compared to region 2.

[0186] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are cases where this occurs. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is any number) Examples of crystalline compounds are shown.

[0187] The above-mentioned crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure. CAAC structure refers to a structure in which multiple IGZO nanocrystals have c-axis orientation and ab-plane orientation This is a crystal structure in which the elements are linked without orientation.

[0188] On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is In, G In a material composition containing a, Zn, and O, a portion of it is observed to be in the form of nanoparticles mainly composed of Ga. The region where the substance is suspected and the region where it is observed as nanoparticles mainly composed of In are, respectively This refers to a configuration in which elements are randomly dispersed in a mosaic-like manner. Therefore, in CAC-OS, crystals Structure is a secondary element.

[0189] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, includes No.

[0190] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 In some cases, a clear boundary may not be observable in a region where [this component] is the main component.

[0191] Note that aluminum, yttrium, copper, vanadium, and beryllium can be used instead of gallium. Molybdenum, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum N, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more species selected from Nesium etc. are included, CAC-OS will The region is observed to be in the form of nanoparticles mainly composed of the metal element, and the portion is mainly composed of In. The regions observed as nanoparticles are randomly dispersed in a mosaic-like manner. It refers to.

[0192] CAC-OS is a material that can be molded by sputtering, for example, under conditions where the substrate is not intentionally heated. This can be achieved. Also, when forming CAC-OS by sputtering, the deposition gas The gases selected were inert gases (typically argon), oxygen gas, and nitrogen gas. You may use one or more of them. Also, the oxygen in relation to the total flow rate of the deposition gas during film formation. A lower gas flow rate ratio is preferable; for example, a flow rate ratio of oxygen gas of 0% or more and less than 30% is preferable. Alternatively, it is preferable to have a value of 0% or more and 10% or less.

[0193] CAC-OS is an X-ray diffraction (XRD) measurement method When measured using one method, the Out-of-Plane method with a θ / 2θ scan: It is characterized by the absence of a clear peak. In other words, from X-ray diffraction, the measurement area It can be seen that there is no orientation in the ab-plane direction or the c-axis direction of the region.

[0194] Furthermore, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam). In the electron diffraction pattern obtained by irradiation, there is a ring-shaped region of high brightness, and Multiple bright spots are observed in the ring region. Therefore, from the electron diffraction pattern, CAC-OS The crystal structure of is non-oriented in both the planar and cross-sectional directions, nc(nano- It can be seen that it has a crystal structure.

[0195] For example, in CAC-OS in In-Ga-Zn oxide, energy-dispersive X Linear spectroscopy (EDX: Energy Dispersive X-ray spectrometer) GaO X3 The region in which is the main component And, In X2 Zn Y2 O Z2 , or InO X1 Regions where it is the main component are unevenly distributed and mixed. It can be confirmed that it has the following structure.

[0196] CAC-OS has a different structure from IGZO compounds in which metal elements are uniformly distributed, It has different properties from GZO compounds. In other words, CAC-OS is GaO X3 These are the main components. The region and In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component, and It exhibits phase separation and has a mosaic-like structure in which regions composed primarily of each element are arranged.

[0197] Here, In X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is GaO X This region has higher conductivity compared to regions where 3 is the main component. X2 Zn Y2 O Z2 , or InO X1 As carriers flow through the region where gold is the main component, Conductivity as a group oxide is exhibited. Therefore, In X2 Zn Y2 O Z2 , or InO X Regions where 1 is the main component are distributed in a cloud-like manner within the metal oxide, resulting in high field effect transfer. Mobility (μ) can be achieved.

[0198] On the other hand, GaO X3 Regions in which these are the main components are In X2 Zn Y2 O Z2 , or InO X1 This region has higher insulating properties compared to the region where GaO is the main component. X3 etc. The region where this is the main component is distributed within the metal oxide, which suppresses leakage current and improves performance. It can perform itching operations.

[0199] Therefore, when CAC-OS is used in semiconductor devices, GaOX3 Insulation caused by factors such as In X2 Zn Y2 O Z2 , or InO X1 The conductivity resulting from this works in a complementary manner. This results in a high on-current (I on ), and achieving high field effect mobility (μ) It is possible.

[0200] Furthermore, semiconductor devices using CAC-OS have high reliability. Therefore, CAC-OS is, It is ideal for various semiconductor devices, including displays.

[0201] Furthermore, transistors with CAC-OS in the semiconductor layer have high field-effect mobility and drive Because of its high dynamic capability, this transistor is used in drive circuits, and typically in scanning circuits that generate gate signals. By using it in a line drive circuit, it is possible to provide a display device with a narrow bezel (also called a narrow bezel). Yes, it is possible. Furthermore, the transistor can be used to supply signals from the signal lines of the display device. Line drive circuit (especially the one connected to the output terminal of the shift register of the signal line drive circuit) By using it in a multiplexer, it provides a display device with fewer wires connected to the display device. It is possible.

[0202] Furthermore, transistors with CAC-OS in the semiconductor layer use low-temperature polysilicon. Unlike radiators, it does not require a laser crystallization process. Therefore, it can be used with large-area substrates. Even for display devices, it is possible to reduce manufacturing costs. Furthermore, ultra-high-visibility ("4K resolution", "4K2K", "4K"), Super Hi-Vision ("8K resolution") High resolution such as "8K4K" and "8K" are used in large display devices. By using transistors having CAC-OS in the semiconductor layer in the drive circuit and display unit, It allows for writing in a short time and reduces display errors, which is preferable.

[0203] Alternatively, silicon may be used as the semiconductor in which the transistor channel is formed. Amorphous silicon may be used as the substrate, but crystalline silicon is particularly preferred. It is preferable to use microcrystalline silicon, polycrystalline silicon, monocrystalline silicon, etc. It is preferable that polycrystalline silicon can be formed at a lower temperature compared to single-crystal silicon. Furthermore, it possesses higher field-effect mobility and greater reliability compared to amorphous silicon.

[0204] The bottom-gate transistor exemplified in this embodiment can reduce the manufacturing process. It is preferable. Also, by using amorphous silicon in this case, it is preferable to using polycrystalline silicon. Because it can be formed at low temperatures, it can be used as a material for wiring and electrodes in layers below the semiconductor layer, and as a substrate material, and is resistant to Because it is possible to use materials with low heat properties, the range of material choices can be broadened. For example This allows for the use of extremely large-area glass substrates, etc. On the other hand, top gate type Because transistors tend to form impurity regions in a self-aligning manner, variations in characteristics can occur. This is preferable because it can reduce the amount of silicon. In particular, polycrystalline silicon and monocrystalline silicon This is suitable when using [a specific method / tool].

[0205] [Conductive layer] The gate, source, and drain of a light-shielding transistor, as well as each component of the display device Materials that can be used for conductive layers such as wiring and electrodes include aluminum, titanium, and Chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, Alternatively, metals such as tungsten, or alloys with tungsten as the main component, may be used. These materials can be used in monolayer or multilayer structures. For example, A single-layer structure of an aluminum film containing ricon, and a double-layer structure in which an aluminum film is laminated on a titanium film. Construction: A two-layer structure in which an aluminum film is laminated on a tungsten film, copper-magnesium-aluminum A two-layer structure in which a copper film is laminated on a nium alloy film, a two-layer structure in which a copper film is laminated on a titanium film, tan A two-layer structure in which a copper film is laminated on a gusten film, a titanium film or titanium nitride film, and layered on top of that. An aluminum film or copper film is laminated, and then a titanium film or titanium nitride film is formed on top of it. The structure consists of three layers: a molybdenum film or molybdenum nitride film, and an aluminum film layered on top of it. A film or copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of it. It has a three-layer structure, etc. Furthermore, oxides such as indium oxide, tin oxide, or zinc oxide can also be used. Good. Also, using copper containing manganese improves the controllability of the shape through etching. preferable.

[0206] In addition, the gate, source, and drain of a translucent transistor, as well as the components of a display device, are included. A light-transmitting conductive material that can be used in conductive layers of various wiring and electrodes, and For example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium oxide Conductive oxides such as zinc oxide with added um, or graphene can be used. Gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron Metal materials such as cobalt, copper, palladium, or titanium, or alloy materials containing such metal materials Materials can be used. Alternatively, nitrides of the metal material (e.g., titanium nitride) can be used. It is acceptable to use metallic materials, alloy materials (or nitrides thereof), It should be thinned to a degree that it is photosensitive. Furthermore, the laminated film of the above material can be used as a conductive layer. This can be done, for example, by using a multilayer film of a silver-magnesium alloy and indium tin oxide. This is preferable because it can improve conductivity. These are various components that make up the display device. Conductive layers such as wires and electrodes, and conductive layers in display elements (functioning as pixel electrodes or common electrodes) It can also be used in conductive layers.

[0207] Furthermore, as a conductive material with light-transmitting properties, its resistance is reduced by including impurity elements. Using oxide semiconductors (oxide conductors (OC)) It is preferable.

[0208] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic, epoxy, etc. In addition to resins and resins containing siloxane bonds, silicon oxide, silicon oxide nitride, and silicon nitride oxide are also used. Inorganic insulating materials such as silicon nitride and aluminum oxide can also be used.

[0209] Examples of insulating films with low water permeability include silicon nitride films and silicon nitride oxide films, which contain nitrogen and silicon. Examples include films containing nitrogen and aluminum, such as aluminum nitride films. Silicon oxide films, silicon oxide nitride films, aluminum oxide films, etc., may also be used.

[0210] [Liquid crystal element] Examples of liquid crystal elements include vertical alignment (VA). Liquid crystal elements to which the mode is applied can be used. As for the vertical alignment mode, MVA( Multi-Domain Vertical Alignment) mode, PVA Patterned Vertical Alignment) mode, ASV (Adv Features such as the (anced Super View) mode can be used.

[0211] Furthermore, liquid crystal elements with various modes applied can be used. For example, In addition to VA mode, there are also TN (Twisted Nematic) mode and IPS (In-Plant Nematic) mode. -Plane-Switching) mode, FFS (Fringe Field Switch) itching) mode, ASM(Axially Symmetric aligne) d Micro-cell) mode, OCB (Optically Compensated) (ed Birefringence) mode, FLC (Ferroelectric L iquix Crystal mode, AFLC (AntiFerroelectric) Liquid Crystal mode, ECB (Electrically Controlled) Trolled Birefringence mode, guest host mode, etc. are applied. A liquid crystal element can be used.

[0212] Furthermore, liquid crystal elements control the transmission or non-transmission of light through the optical modulation effect of liquid crystals. It is a child. Furthermore, the optical modulation effect of liquid crystals is due to the electric field acting on the liquid crystal (horizontal electric field, vertical electric field) It is controlled by an electric field (including an electric field in an oblique direction). Note that the liquid crystal used in the liquid crystal element and Examples include thermotropic liquid crystals, low molecular weight liquid crystals, polymer liquid crystals, and polymer dispersed liquid crystals (PDLC). :Polymer Dispersed Liquid Crystal), polymer net Network Liquid Crystal (PNLC) tal), ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. can be used. These liquid crystal materials are Depending on the conditions, the cholesteric phase, smectic phase, cubic phase, chiral nematics This shows the cubic phase, isotropic phase, etc.

[0213] Furthermore, either positive-type or negative-type liquid crystals may be used as the liquid crystal material. The optimal liquid crystal material should be used depending on the mode and design to be applied.

[0214] Furthermore, an alignment film can be provided to control the orientation of the liquid crystal. If adopted, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is the liquid crystal phase. One such example is when a cholesteric liquid crystal is heated, and it transitions from the cholesteric phase to the isotropic phase. This phase appears just before transfer. The blue phase only appears within a narrow temperature range. To improve the properties, a liquid crystal composition containing several weight percent or more of a chiral agent is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and optical isotropy. It is a property. Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent is an alignment treatment. It is essential and has low viewing angle dependence. Also, since an alignment layer is not required, rubbing treatment is not necessary. As this is essential, it can prevent electrostatic discharge damage caused by rubbing, and This can reduce defects and damage to liquid crystal display devices during the manufacturing process.

[0215] Furthermore, the liquid crystal elements include transmissive liquid crystal elements, reflective liquid crystal elements, or semi-transmissive liquid crystal elements. There are elements, etc.

[0216] In one aspect of the present invention, a transmissive liquid crystal element can be used particularly suitably.

[0217] When using transmissive or semi-transmissive liquid crystal elements, two polarizing elements are placed so as to sandwich a pair of substrates. A plate is provided. Furthermore, a backlight is provided outside the polarizing plate. As for the backlight, It can be a direct-lit backlight or an edge-lit backlight. Direct-lit backlight equipped with LED (Light Emitting Diode). Using this method makes local dimming easier and allows you to increase contrast. It is preferable. Also, if edge-lit backlights are used, the module including the backlights This is preferable because it allows for a reduction in the thickness of the rubbing.

[0218] Furthermore, by turning off the edge-lit backlight, a see-through display can be achieved. It is possible.

[0219] [Colored layer] Materials that can be used for the colored layer include metal materials, resin materials, pigments, or dyes. Examples include resin materials.

[0220] [Light blocking layer] Materials that can be used as a light-shielding layer include carbon black, titanium black, Examples include metals, metal oxides, and composite oxides containing solid solutions of multiple metal oxides. Light-shielding layer This may be a film containing a resin material, or a thin film of an inorganic material such as a metal. Furthermore, a laminated film containing the material for the colored layer can be used as the light-shielding layer. For example, a film of a certain color A film containing a material used for a light-transmitting colored layer, and a material used for a colored layer that transmits light of other colors. A laminated structure with a film containing can be used. By using the same material for the colored layer and the light-shielding layer, This is preferable because it allows for the standardization of equipment and simplifies the process.

[0221] The above is an explanation of the constituent elements.

[0222] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0223] (Embodiment 2) In this embodiment, an input device (touch sensor) applicable to a display device according to one aspect of the present invention is provided. and an example configuration of an input / output device (touch panel), which is an example of a display device according to one aspect of the present invention. I will explain.

[0224] [Example of touch sensor configuration] The following describes an example configuration of an input device (touch sensor) with reference to the diagrams.

[0225] Figure 17(A) shows a schematic top view of the input device 550. The input device 550 is located on the circuit board 560. Multiple conductive layers 551, multiple conductive layers 552, multiple wirings 555, and multiple wirings 556 are placed on top of each other. It has. Also, the substrate 560 has multiple conductive layers 551 and multiple conductive layers 552 and electrical An FPC557 is provided to connect to it. Also, in Figure 17(A), the FPC557 This shows an example where IC558 is provided.

[0226] Figure 17(B) shows a magnified view of the area enclosed by the dashed line in Figure 17(A). Conductive layer 55 1 has a shape in which multiple rhombus-shaped electrode patterns are connected horizontally. The diamond-shaped electrode patterns are electrically connected to each other. Similarly, the conductive layer 552 is also electrically connected. Multiple rhombus-shaped electrode patterns are arranged in a vertical line, and the rhombus-shaped electrode patterns are arranged in a row. Each turn is electrically connected. Also, conductive layer 551 and conductive layer 552 are Some of these overlap and intersect with each other. At this intersection, conductive layer 551 and conductive layer 55 An insulator is sandwiched between the two components to prevent an electrical short circuit.

[0227] Furthermore, as shown in Figure 17(C), a plurality of conductive layers 552 having a rhombus shape are connected to conductive layer 5 The configuration may also be connected by 53. The island-shaped conductive layers 552 are arranged in a vertical line. Furthermore, the conductive layer 553 electrically connects two adjacent conductive layers 552. By using such a configuration, the conductive layer 551 and the conductive layer 552 are processed from the same conductive film. They can be formed simultaneously. Therefore, variations in these film thicknesses can be suppressed. This suppresses variations in the resistance and light transmittance of each electrode depending on the location. Here, the conductive layer 552 is configured to have a conductive layer 553, but the conductive layer 551 is such The configuration is also acceptable.

[0228] Furthermore, as shown in Figure 17(D), conductive layer 551 and conductive layer 55 shown in Figure 17(B) Alternatively, the inside of the two rhombus-shaped electrode patterns can be hollowed out, leaving only the outline. At this time, the widths of conductive layers 551 and 552 are narrowed to such an extent that they are not visible to the user. In that case, as described later, the conductive layer 551 and conductive layer 552 are made of a light-shielding material such as a metal or alloy. Materials may be used. Also, the conductive layer 551 or conductive layer 552 shown in Figure 17(D) may be on top. The configuration may also include a conductive layer 553.

[0229] One conductive layer 551 is electrically connected to one wiring 555. 552 is electrically connected to one wire 556. Here, conductive layer 551 and conductive layer 5 One of the 52 corresponds to row wiring, and the other corresponds to column wiring.

[0230] The IC558 has the function of driving the touch sensor. The signal output from the IC558 The wire 555 or wire 556 connects to either the conductive layer 551 or the conductive layer 552. It is supplied. Also, the current (or potential) that flows through either the conductive layer 551 or the conductive layer 552 is supplied. This is input to IC558 via wiring 555 or wiring 556.

[0231] In this case, when the input device 550 is superimposed on the display surface of the display panel to form a touch panel. It is preferable to use a light-transmitting conductive material for the conductive layer 551 and conductive layer 552. Furthermore, transparent conductive materials are used for conductive layers 551 and 552, allowing light to be seen from the display panel. When light is extracted via conductive layer 551 or conductive layer 552, conductive layer 551 and conductive A conductive film containing the same conductive material is placed as a dummy pattern between layer 552 and the other layer. This is preferable. In this way, a portion of the gap between conductive layer 551 and conductive layer 552 is made into a dummy pattern. By filling it with a ray, variations in light transmittance can be reduced. As a result, input device 5 It can reduce the brightness unevenness of light transmitted through 50.

[0232] Examples of light-transmitting conductive materials include indium oxide, indium tin oxide, and indium Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide with added gallium are used. This can be done. Furthermore, a film containing graphene can also be used. Examples of films containing graphene include... For example, a film containing graphene oxide can be formed by reduction. Methods of reduction include: Methods such as applying heat can be cited.

[0233] Alternatively, a metal or alloy that is thin enough to be translucent can be used. For example, gold. Silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metals such as copper, palladium, or titanium, or alloys containing such metals, can be used. Alternatively, a nitride of the metal or alloy (for example, titanium nitride) may be used. Alternatively, a laminated film may be used in which two or more conductive films containing the materials described above are stacked.

[0234] Furthermore, conductive layers 551 and 552 are processed to be so thin that they are not visible to the user. A conductive film may be used. For example, such a conductive film may be processed into a grid (mesh) shape. This allows for high conductivity and high visibility of the display device. 30 nm to 100 μm, preferably 50 nm to 50 μm, more preferably 5 It is preferable that the material has a portion with a width of 0 nm to 20 μm. In particular, a portion with a width of 10 μm or less. A conductive film with a pattern width is preferable because it is extremely difficult for the user to see.

[0235] As an example, Figures 18(A) to (D) show an expanded portion of the conductive layer 551 or conductive layer 552. A rough schematic diagram is shown. Figure 18(A) shows an example using a lattice-shaped conductive film 546. This is shown. At this time, the conductive film 546 is positioned so as not to overlap with the display elements of the display device. This arrangement is preferable because it does not block light from the display device. The orientation of the grid is the same as the orientation of the display element array, and the period of the grid is an integer of the period of the display element array. It is preferable to double the amount.

[0236] Furthermore, Figure 18(B) shows a lattice-shaped conductive film processed to form triangular openings. 547 examples are shown. With this configuration, compared to the case shown in Figure 18(A) This makes it possible to lower the overall resistance.

[0237] Furthermore, as shown in Figure 18(C), the conductive film 54 has a pattern shape that does not have periodicity. It may also be set to 8. With this configuration, when superimposed on the display unit of the display device, moiré patterns are reduced. This can prevent the occurrence of [the problem].

[0238] Furthermore, conductive nanowires may be used for conductive layers 551 and 552. Figure 18 (D) shows an example using nanowire 549. Adjacent nanowire 54 By distributing the 9s at an appropriate density so that they touch each other, a two-dimensional network is formed. It can be formed and function as an extremely transparent conductive film. For example, the average diameter The value is 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, more preferably 5 Nanowires with a wavelength of 25 nm or more can be used. As for nanowire 549, Metal nanowires such as Ag nanowires, Cu nanowires, Al nanowires, or Car Materials such as von nanotubes can be used. For example, in the case of Ag nanowires, the light transmittance is A sheet resistance of 40Ω / □ or more and 100Ω / □ or less can be achieved with a viscosity of 89% or more.

[0239] The above is an explanation of an example of a touch sensor configuration.

[0240] [Example of touch panel configuration] The detection element (also called a sensor element) of the touch panel according to one embodiment of the present invention is not limited. Various sensors capable of detecting the proximity or contact of an object to be detected, such as a finger or stylus. It can be applied as a detection element.

[0241] For example, sensor types include capacitive, resistive, surface acoustic wave, and infrared. Various methods can be used, such as optical, pressure-sensitive, and other similar methods.

[0242] In this embodiment, a touch panel having a capacitive sensing element will be used as an example for explanation. ru.

[0243] Capacitive capacitance methods include surface capacitance and projected capacitance. Shadow capacitance methods include self-capacitance methods and mutual capacitance methods. This is preferable because it enables simultaneous multi-point detection.

[0244] A touch panel according to one aspect of the present invention is formed by bonding together a separately manufactured display device and a detection element. A configuration in which a detection element is configured on one or both of the substrate supporting the display element and the opposing substrate. Various configurations can be applied, such as configurations that include poles.

[0245] [Example Configuration] Figure 19(A) is a schematic perspective view of the touch panel 420A. Figure 19(B) is a schematic perspective view of Figure 19 This is a schematic perspective view of (A) unfolded. For clarity, only representative components are shown. In Figure 19(B), some components (substrate 430, substrate 472, etc.) are outlined with dashed lines. It is clearly stated.

[0246] The touch panel 420A has an input device 410 and a display device 470, and these are stacked It is provided in this manner. Therefore, the touch panel 420A is called an out-cell type touch panel. It can be done.

[0247] As the display device 470, the display device shown in Embodiment 1 can be used. The 420A touch panel has an extremely high aperture ratio and is a low-power touch panel. .

[0248] The input device 410 includes a substrate 430, electrodes 431 and 432, multiple wirings 441, and multiple It has a number of wires 442. FPC450 has a number of wires 441 and a number of wires 442 They are electrically connected. The FPC450 is equipped with IC451.

[0249] The display device 470 has two substrates, 471 and 472, which are arranged opposite each other. 470 has a display unit 481 and a drive circuit unit 482. On the circuit board 471, there is wiring 407 And so on. FPC473 is electrically connected to wiring 407. FPC473 IC474 is provided there.

[0250] The touch panel 420 shown in Figure 19(A) consists of FPC473, IC474, and FPC450. Since it is equipped with IC451 and other components, it can also be called a touch panel module. ru.

[0251] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0252] (Embodiment 3) Oxide semiconductors are used in the pixel circuits that drive the liquid crystal elements, and the off-current is extremely low. It is preferable to apply a transistor. Alternatively, a memory element may be applied to the pixel circuit. This allows the writing operation to pixels to be stopped when displaying still images using liquid crystal elements. Even if the frame rate is extremely small, it becomes possible to maintain the gradation. The display can be maintained even when the power is low. This allows for extremely low power consumption in the display. .

[0253] The following section will explain the operating modes that can be performed with liquid crystal elements, using Figure 20 as an example. cormorant.

[0254] Note that the following refers to the normal frame frequency (typically between 30Hz and 240Hz). Normal mode (operates at 60Hz to 240Hz) ) and an idle stop (IDS) drive mode that operates at a low frame frequency. I will explain this by giving an example.

[0255] Note that the Idling Stop (IDS) drive mode refers to the image data writing process. This refers to a drive method that stops rewriting image data after the execution of a certain action. By writing the data and then extending the interval until the next image data is written, This reduces the power consumption required for writing image data in between. • The Stop (IDS) drive mode operates at, for example, 1 / 100 to 1 / 10 of the normal operating mode. The frame frequency can be set to a certain extent.

[0256] Figures 20(A),(B), and(C) show the normal drive mode and the Idling Stop (IDS) drive mode. This is a circuit diagram and timing chart explaining the operating modes. Note that in Figure 20(A), the liquid A liquid crystal element 601 (here, a transmissive liquid crystal element) and an image electrically connected to the liquid crystal element 601. The basic circuit 606 is explicitly shown. Also, in the pixel circuit 606 shown in Figure 20(A), the signal Line SL, gate line GL, and transistor M1 connected to signal line SL and gate line GL. And the capacitive element Cs connected to transistor M1 LC This is illustrated in the diagram.

[0257] As transistor M1, a transistor having a metal oxide in its semiconductor layer is used. This is preferable. A transistor having a metal oxide performs amplification, rectification, and switching functions. If it has at least one of the functions, the metal oxide is a metal oxide semiconductor (metal Oxide semiconductor) or oxide semiconductor (oxide sem It can be called an iconductor, or simply an OS. Below are some representative examples of transistors. This will be explained using an oxide semiconductor transistor (OS transistor). S-transistors have extremely low leakage current (off-current) when not conducting, unlike OS-transistors. By making the converter non-conductive, it is possible to retain charge in the pixel electrodes of the liquid crystal element. .

[0258] In the circuit diagram shown in Figure 20(A), the liquid crystal element LC is the leak path for data D1. Therefore, in order to properly perform idle stop operation, the resistance of the liquid crystal element LC is The rate is 1.0 × 10 14 It is preferable that the density be Ω·cm or greater.

[0259] Furthermore, the channel region of the above OS transistor may contain, for example, In-Ga-Zn oxide. In-Zn oxide and the like can be suitably used. Furthermore, the above-mentioned In-Ga-Zn oxide can be used. Typical examples include In:Ga:Zn = 1:1:1 [atomic ratio] or In: A composition with a Ga:Zn ratio of approximately 4:2:3 [atomic ratio] can be used.

[0260] Furthermore, Figure 20(B) shows the signal line SL and gate line GL in normal drive mode, respectively This is a timing chart showing the waveform of the applied signal. In normal drive mode, the normal frame It operates at a frequency (e.g., 60Hz). Figure 20(B) shows the period from T1 to T3. During the frame period, a scan signal is applied to the gate line GL, and data D1 is written from the signal line SL. Perform the operation. This operation is performed when the same data D1 is written from period T1 to T3, or The same applies when writing different data.

[0261] On the other hand, Figure 20(C) shows the signal line SL in idle stop (IDS) drive mode. This is a timing chart showing the waveforms of the signals applied to the gate line GL, respectively. In idling stop (IDS) drive, at low frame frequencies (e.g., 1 Hz or less) It works. One frame duration is represented by period T1, and within that, the data writing period is defined as period T. W The data retention period is set to period T. RET This is represented by: Idling Stop (IDS) drive motor Do is, period T W Then, a scan signal is applied to the gate line GL, and data D1 is written to the signal line SL. Period T RET Then, the gate wire GL is fixed to a low voltage, and transistor M1 is in a non-conductive state. The system intentionally retains the data D1 once it has been written. In terms of numbers, for example, 0.1Hz or more but less than 60Hz, or 0.1Hz or more but less than 30Hz. That's all you need to do.

[0262] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0263] (Embodiment 4) In this embodiment, a display module that can be manufactured using one aspect of the present invention is provided. I will explain.

[0264] The display module 6000 shown in Figure 21(A) consists of an upper cover 6001 and a lower cover 60 Between 02 and FPC6005 are the display panel 6006, frame 6009, and It has a lint substrate 6010 and a battery 6011.

[0265] For example, a display device manufactured using one aspect of the present invention may be used as a display panel 6006. This is possible. The display panel 6006 has a polarizing plate and a backlight. This makes it possible to create a display module with extremely low power consumption.

[0266] The upper cover 6001 and lower cover 6002 are sized to match the display panel 6006. The shape and dimensions can be changed as needed.

[0267] Alternatively, a touch panel may be provided on top of the display panel 6006. This involves superimposing a resistive or capacitive touch panel onto the display panel 6006. It is possible to also provide a touch panel without a touch panel, on the display panel 6006. It is also possible to give it abilities.

[0268] Frame 6009 provides protection for the display panel 6006, as well as the movement of the printed circuit board 6010. It has the function of an electromagnetic shield to block electromagnetic waves generated by the operation. The 6009 may also function as a heat sink.

[0269] Printed circuit board 6010 is a power supply circuit and a signal for outputting video signals and clock signals. It has a power processing circuit. The power supply that provides power to the power supply circuit is an external commercial power supply. Alternatively, a separate battery 6011 may be used as the power source. This can be omitted when using commercial power.

[0270] Figure 21(B) is a schematic cross-sectional view of the display module 6000 equipped with an optical touch sensor. That is the case.

[0271] The display module 6000 includes a light-emitting section 6015 and a receiver provided on the printed circuit board 6010. It has a light-emitting section 6016. It is also surrounded by an upper cover 6001 and a lower cover 6002. The region has a pair of light guides (light guide 6017a, light guide 6017b).

[0272] The upper cover 6001 and the lower cover 6002 can be made of, for example, plastic. Also, the upper cover 6001 and the lower cover 6002 are each thin (for example, 0. It is possible to make it (5mm or more and 5mm or less). Therefore, display module 6000 is extremely It becomes possible to make it lighter. Also, the upper cover 6001 and lower cover 6 Since 002 can be produced, manufacturing costs can be reduced.

[0273] The display panel 6006 connects to the printed circuit board 6010 and battery via the frame 6009. It is installed overlapping with Ri 6011. The display panel 6006 and frame 6009 are light guides. 6017a is fixed to the light guide section 6017b.

[0274] Light 6018 emitted from the light-emitting unit 6015 is directed by the light guide unit 6017a to the display panel 60 It passes through the upper part of 06, through the light guide part 6017b, and reaches the light receiving part 6016. For example, a finger or When light 6018 is blocked by an object being detected, such as a tyrus, touch operation is detected. It is possible.

[0275] Multiple light-emitting units 6015 are provided, for example, along two adjacent sides of the display panel 6006. Multiple light-receiving units 6016 are provided at positions opposite to the light-emitting unit 6015. This allows for... Information about the location where the switch operation was performed can be obtained.

[0276] The light-emitting part 6015 can use a light source such as an LED element. In particular, the light-emitting part 6015 refers to infrared light that is invisible to the user and harmless to the user. It is preferable to use a source.

[0277] The light-receiving unit 6016 is a photoelectric element that receives light emitted by the light-emitting unit 6015 and converts it into an electrical signal. A photodiode capable of receiving infrared light can be used. can.

[0278] The light guide portion 6017a and the light guide portion 6017b are members that transmit at least light 6018. The following can be used. By using the light guide part 6017a and the light guide part 6017b, the light-emitting part 6015 and the light receiving unit 6016 can be placed below the display panel 6006, and ambient light This can prevent the light from reaching the light-receiving unit 6016 and causing the touch sensor to malfunction. In particular, visible light It is preferable to use a resin that absorbs and transmits infrared rays. This reduces the error of the touch sensor. It can suppress the movement more effectively.

[0279] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0280] (Embodiment 5) This embodiment describes electronic equipment to which a display device according to one aspect of the present invention can be applied. .

[0281] A display device according to one aspect of the present invention can provide a bright display and is highly responsive regardless of the intensity of ambient light. Visibility can be achieved. Furthermore, a display device according to one aspect of the present invention can achieve low power consumption. This is possible. Therefore, portable electronic devices, wearable electronic devices, and It can be suitably used in e-book readers, television equipment, digital signage, and the like. ru.

[0282] Figures 22(A) and (B) show an example of a personal information terminal 800. The personal information terminal 800 is, It has a housing 801, a housing 802, a display unit 803, a display unit 804, and a hinge unit 805, etc. .

[0283] The housing 801 and housing 802 are connected by a hinge portion 805. The portable information terminal 800 is As shown in Figure 22(A), the housing 801 is folded, and as shown in Figure 22(B) And you can open the casing 802.

[0284] For example, it is possible to display document information on display units 803 and 804, electronic It can also be used as a book reader. Furthermore, still images can be displayed on the display units 803 and 804. It can also display videos and images.

[0285] Thus, the portable information terminal 800 can be folded for portability, making it suitable for a wide range of uses. Excellent usability.

[0286] Furthermore, the enclosure 801 and enclosure 802 have a power button, operation buttons, an external connection port, and It may have a speaker, microphone, etc.

[0287] Figure 22(C) shows an example of a personal digital information terminal. The personal digital information terminal 810 shown in Figure 22(C) is , housing 811, display unit 812, operation buttons 813, external connection port 814, speaker 81 5. It has a microphone 816, a camera 817, etc.

[0288] The display unit 812 is equipped with a display device according to one aspect of the present invention.

[0289] The personal information terminal 810 is equipped with a touch sensor on the display unit 812. To make a phone call, or All operations, such as entering text, are performed by touching the display unit 812 with a finger or stylus. It can be done in this way.

[0290] Furthermore, the power can be turned ON or OFF by operating the operation button 813, and the display unit 812 will display an item. You can switch the type of image displayed. For example, from the email composition screen, you can switch to the main image. You can switch to a new screen.

[0291] Furthermore, the mobile information terminal 810 contains a detection device such as a gyro sensor or an accelerometer. By providing this, the orientation (vertical or horizontal) of the mobile information terminal 810 is determined, and the image of the display unit 812 is displayed accordingly. The orientation of the screen display can be automatically switched. To replace it, touch the display unit 812, operate the operation button 813, or use the microphone 816. This can also be done using voice input or other methods.

[0292] The personal information terminal 810 is one selected from, for example, a telephone, a notebook, or an information viewing device. Or it has multiple functions. Specifically, it can be used as a smartphone. The mobile information terminal 810 can, for example, make phone calls, send emails, view and create documents, play music, and move It can run various applications such as video playback, internet communication, and games. Cut.

[0293] Figure 22(D) shows an example of a camera. Camera 820 consists of a housing 821, a display unit 822, It has operation buttons 823, a shutter button 824, etc. The camera 820 also has a detachable... A capable 826 lens is attached.

[0294] The display unit 822 is equipped with a display device according to one aspect of the present invention.

[0295] Here, we'll refer to the camera 820 as the lens 826, which will be removed from the housing 821 and replaced. This configuration allows for this, but the lens 826 and the housing could also be integrated.

[0296] Camera 820 takes still images or videos by pressing the shutter button 824. It can be displayed. Also, the display unit 822 has the function of a touch panel, and the display unit 8 It is also possible to take an image by touching button 22.

[0297] Note that the Camera 820 requires the attachment of a separate flash unit, viewfinder, etc. This is possible. Alternatively, these may be incorporated into the enclosure 821.

[0298] Figure 23(A) shows the television device 830. The television device 830 has a display unit. It has components 831, a housing 832, a speaker 833, etc. Furthermore, it has an LED lamp, an operation key (electric (Including power switches or operating switches), connection terminals, various sensors, microphones, etc. It is possible to have.

[0299] Furthermore, the television device 830 can be operated by the remote control unit 834. .

[0300] Television equipment 830 can receive broadcast signals transmitted from terrestrial or satellite sources. Examples include radio waves used for broadcasting. Also, broadcast radio waves include analog broadcasting and digital broadcasting. Yes, and there are also broadcasts with video and audio, or audio only. For example, in the UHF band (approximately 300 A specific frequency in the MHz to 3GHz or VHF band (30MHz to 300MHz) It can receive broadcast radio waves transmitted within a certain frequency band.

[0301] The television device 830 uses, for example, multiple data received in multiple frequency bands. This allows for a higher transfer rate, enabling the acquisition of more information. This allows the display unit 831 to display video with a resolution exceeding Full HD. This is possible. For example, with resolutions of 4K2K, 8K4K, 16K8K, or higher. It is possible to display video.

[0302] Furthermore, the television equipment 830 can connect to the Internet or LAN (Local Area Network). Data via computer networks such as Wi-Fi (registered trademark) Using broadcast data transmitted via data transmission technology, the display unit 831 generates an image to be displayed on the display unit 831. It may also be configured in such a way. In this case, the television device 830 does not need to have a tuner. good.

[0303] Figure 23(B) shows a digital signage 840 mounted on a cylindrical column 842. Yes. The digital signage 840 has a display unit 841.

[0304] The larger the display unit 841, the more information can be provided at once. The wider section 841 is, the more easily it catches people's attention, which can, for example, enhance the effectiveness of advertising. ru.

[0305] By applying a touch panel to the display unit 841, images or videos can be displayed on the display unit 841. Not only does it do that, but it is also preferable that the user can operate it intuitively. Also, route information is When used for purposes such as providing traffic information, intuitive operation is possible. It can improve usability.

[0306] Figure 23(C) shows the notebook-type personal computer 850. Computer 850 consists of a display unit 851, a housing 852, a touchpad 853, and a connection port 85 It has four classes.

[0307] The touchpad 853 can be used as a pointing device or as an input method for pen tablets, etc. It functions and can be operated with a finger, stylus, etc.

[0308] Furthermore, the touchpad 853 incorporates a display element. As shown in Figure 23(C) By displaying the input keys 855 on the surface of the touchpad 853, the touchpad 853 It can be used as a keyboard. When you touch input key 855, it will shake To provide tactile feedback through movement, a vibration module is incorporated into the touchpad 853. That's good too.

[0309] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Explanation of Symbols]

[0310] 10 Display device 11 circuit boards 12 circuit boards 13 Display section 13B Display area 13G display area 13R display area 14 circuits 15 Wiring 16 FPC 17 IC 20 liquid crystal elements 20B liquid crystal element 20G LCD content 20R liquid crystal element 21 Conductive layer 22 LCD 23 Conductive layer 24a Alignment film 24b alignment film 25B light 25G light 25R light 26 Insulating layer 30 transistors 30A transistor 30B Transistor 30G Transistor 30R Transistor 31 Conductive layer 31a conductive layer 32 Semiconductor layer 32a Low resistance area 33 Conductive layer 34 Insulating layer 39a Polarizing plate 39b Polarizing plate 40 pixels 40B subpixels 40G sub-pixels 40R sub-pixel 40W sub-pixel 40s shading area 40t transmission area 40U Pixel Unit 41B Colored layer 41G colored layer 41R colored layer 42 Light blocking layer 51 Wiring 51a Wiring 51b Wiring 51B Wiring 51G wiring 51R Wiring 52 Wiring 52a Wiring 52b Wiring 52B Wiring 52G wiring 52R Wiring 53 Wiring 55 Intersection 57 Light blocking layer 58 Light blocking layer 60B Capacitive element 60G Capacitance Component 60R Capacitive element 81 Insulating layer 82 Insulating layer 83 Insulating layer 90 Backlight Units 407 Wiring 410 Input device 420 Touch Panel 420A Touch Panel 430 circuit boards 431 Electrode 432 Electrode 441 Wiring 442 Wiring 450 FPC 451 IC 470 Display device 471 circuit boards 472 circuit boards 473 FPC 474 IC 481 Display section 482 Drive Circuit Section 546 Conductive film 547 Conductive film 548 Conductive film 549 nanowires 550 Input Device 551 Conductive layer 552 Conductive layer 553 Conductive layer 555 Wiring 556 Wiring 557 FPC 558IC 560 circuit boards 601 Liquid crystal element 606-pixel circuit 800 Mobile Information Terminals 801 cabinet 802 cabinet 803 Display section 804 Display section 805 Hinge section 810 Mobile Information Terminal 811 cabinet 812 Display section 813 Operation Buttons 814 External connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 cabinet 822 Display section 823 Operation Buttons 824 Shutter button 826 Lens 830 Television equipment 831 Display section 832 cabinets 833 Speaker 834 Remote control unit 840 Digital Signage 841 Display section 842 pillars 850 Personal Computers 851 Display section 852 cabinets 853 Touchpad 854 Connection Ports 855 Input Keys 6000 Display Module 6001 Top cover 6002 Lower cover 6005 FPC 6006 Display Panel 6009 Frame 6010 Printed Circuit Board 6011 Battery 6015 Light-emitting part 6016 Light receiving section 6017a Light guiding part 6017b Light guiding part 6018 light

Claims

[Claim 1] It comprises a first colored layer, a second colored layer, a third colored layer, a first transistor, a second transistor, a third transistor, a first display element, a second display element, and a third display element. The first display element is electrically connected to the first transistor and superimposed on the first colored layer. The second display element is electrically connected to the second transistor and superimposed on the second coloring layer. The third display element is electrically connected to the third transistor and superimposed on the third coloring layer. The first transistor has a first semiconductor layer, The second transistor has a second semiconductor layer, The third transistor has a third semiconductor layer, The first semiconductor layer, the second semiconductor layer, and the third semiconductor layer each have a portion that overlaps with the first colored layer. It has a first wiring and a second wiring, and the first wiring and the second wiring each function as signal lines. The first transistor has a first gate electrode, The second transistor has a second gate electrode, The first semiconductor layer has a portion that overlaps with the first gate electrode and a portion that connects to the first wiring. A display device wherein the second semiconductor layer has a portion that overlaps with the second gate electrode, a portion that connects with the second wiring, a portion that intersects with the second wiring, and a portion that intersects with the first wiring.

Images