semiconductor element

Abstract

To provide a semiconductor device.SOLUTION: A semiconductor device comprises: a first type semiconductor structure that includes a first lattice constant, and includes a first side and a second side that is opposite to the first side; an active structure that is positioned on the first side, and emits a radial ray, of which a peak wavelength is 1000nm to 2000nm; and a first contact layer that is positioned to the second side, includes a second lattice constant, and contains a first dopant having a first doping concentration that is larger than 1*1018 / cm3. A difference between the second lattice constant and the first lattice constant is at least 0.5%.SELECTED DRAWING: Figure 1

Claims

1. A semiconductor device, A semiconductor stack layer, Type I semiconductor structure including a first side and a second side opposite to the first side; An active structure located on the first side, comprising a quaternary compound semiconductor, and emitting radiation, wherein the peak wavelength of the radiation is between 1000 nm and 2000 nm; and The first contact layer located on the second side and containing a group 35 compound semiconductor material Semiconductor stack layers, including; A first window layer located between the first contact layer and the first type semiconductor structure; A second window layer, wherein the active structure is located between the first type semiconductor structure and the second window layer; A reflective structure located beneath the aforementioned semiconductor stack layer; A conductive structure located between the reflective structure and the semiconductor stack layer; and Insulating layer located between the conductive structure and the semiconductor stack layer Includes, The second window layer is a semiconductor element that is in direct contact with the active structure.

2. A semiconductor device according to claim 1, A semiconductor device wherein the energy gap of the second window layer is larger than the energy gap of the active structure.

3. A semiconductor device according to claim 1, The quaternary compound semiconductor is AlInGaAs or InGaAsP, and the semiconductor device is such that

4. A semiconductor device according to claim 1, A semiconductor device wherein the energy gap of the first window layer is larger than the energy gap of the active structure.

5. A semiconductor device according to claim 1, The first type semiconductor structure is a semiconductor device comprising a ternary or binary compound that does not contain nitrogen (N).

6. A semiconductor device according to claim 1, A semiconductor device in which the first contact layer and the first window layer contain different materials.

7. A semiconductor device according to claim 1, The second window layer is a semiconductor element having a roughened surface.

8. A semiconductor device according to claim 1, The material of the second window layer is a semiconductor device containing InP.

9. A semiconductor device according to claim 1, The aforementioned first type semiconductor structure is a P-type semiconductor device.

10. A semiconductor device according to claim 1, The aforementioned first-type semiconductor structure is a semiconductor device containing InAlAs.

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