System and method for controlling foreline pressure

Abstract

Disclosed herein are systems and methods for controlling pressure in a foreline of a processing system that reduce foreline pressure fluctuations. In one embodiment, a processing system is provided that includes a first processing chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump is coupled to the outlet of the first processing chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly connected to the foreline downstream of the first pump. The first foreline pressure control system is operable to control pressure in the foreline independently of operation of the first pump.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to pressure control in semiconductor devices and methods therefor, and more specifically to pressure control in a foreline of a semiconductor processing chamber.

Background Art

[0002] Description of Related Art

[0002] In semiconductor manufacturing, integrated circuits (ICs) are formed on semiconductor substrates through various manufacturing steps including etching, deposition, ion implantation, and annealing. Most of these manufacturing steps are performed in a processing chamber maintained under vacuum during processing. Unwanted pressure fluctuations in the processing chamber can lead to process non-uniformity over the surface of the substrate being processed in the processing chamber or between substrates being processed in the processing chamber over time. Process non-uniformity can manifest, among other things, as variations in deposition or etching rates, etching depth, and etching perpendicularity.

[0003]

[0003] Semiconductor manufacturers typically have multiple manufacturing lines, each line comprising a plurality of the same type of processing chambers designed to perform the same type of process such as etching. Chamber-to-chamber pressure fluctuations between chambers on the same or different manufacturing lines can make it difficult to maintain process yield and may introduce unwanted variations between finished devices.

[0004]

[0004] Therefore, there is a need for improved pressure control in semiconductor devices and manufacturing techniques.

Summary of the Invention

[0005]

[0005] Systems and methods for controlling pressure in a foreline of a processing system to reduce fluctuations in foreline pressure are disclosed herein. In one embodiment, a processing system is provided comprising a first processing chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an exhaust port. The inlet of the first pump is connected to the exhaust port of the first processing chamber. The foreline is connected to the exhaust port of the first pump. The first foreline pressure control system is downstream of the first pump and is in fluid communication with the foreline. The first foreline pressure control system is operable to control the pressure in the foreline independently of the operation of the first pump.

[0006]

[0006] In another embodiment, the processing system includes a first processing chamber, a first pump, a second processing chamber, a second pump, a second foreline segment, a foreline, a first pressure control system, a second pressure control system, and a removal system fluidly arranged in the foreline. The first pump has an inlet connected to the exhaust port of the first processing chamber and an exhaust port connected to the inlet of the first foreline segment. The second pump has an inlet connected to the exhaust port of the second processing chamber and an exhaust port connected to the inlet of the second foreline segment. The foreline is connected to the exhaust ports of the first and second foreline segments. The first pressure control system is linked to the first foreline segment. The second pressure control system is linked to the second foreline segment. The first pressure control system is operable to control the pressure in the first foreline segment independently of the operation of the first and second pumps, respectively. The second pressure control system is operable to control the pressure in the second foreline segment independently of the pressure control in the first foreline.

[0007]

[0007] In yet another embodiment, a method is provided for controlling pressure within a processing system, which includes measuring a first foreline pressure downstream of a first pump connected to the exhaust port of a first processing chamber at a first time; comparing the measured first foreline pressure with a first setpoint; and adjusting the first foreline pressure by a first pressure control system that operates in conjunction with the foreline downstream of the first pump, based on the comparison between the measured first foreline pressure and the first setpoint.

[0008]

[0008] In order to allow the above-mentioned features of the Disclosure to be understood in detail, a more specific description of the Disclosure, which has been briefly summarized above, can be obtained by reference to the embodiments. Some embodiments are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered to limit the scope of the Disclosure, and other equally valid embodiments are also permitted. [Brief explanation of the drawing]

[0009] [Figure 1]

[0009] This is a schematic diagram of a processing system having a processing chamber connected to a foreline equipped with a foreline pressure control system, according to a particular aspect of the present disclosure. [Figure 2]

[0010] This is a schematic diagram of a foreline pressure control system utilizing a control valve, having a controller connected to a processing chamber pressure control system, according to a particular aspect of the present disclosure. [Figure 3]

[0011] This is a schematic diagram of a foreline pressure control system utilizing a mass flow controller connected to a processing chamber pressure control system, according to a particular aspect of the present disclosure. [Figure 4]

[0012] This is a schematic diagram of a foreline pressure control system utilizing a control valve, having a controller and a mass flow controller connected to a processing chamber pressure control system, according to a particular aspect of the present disclosure. [Figure 5]

[0013] This is a schematic diagram of a plurality of processing systems having processing chambers connected to forelines equipped with a foreline pressure control system, according to a particular aspect of the present disclosure. Each foreline is connected to other forelines via a common foreline. [Figure 6]

[0014] This is a flowchart of a method for controlling pressure in a foreline, relating to a particular aspect of the present disclosure. [Modes for carrying out the invention]

[0010]

[0015] For ease of understanding, the same reference numerals have been used to indicate identical elements common to multiple drawings, where possible. It is assumed that elements and features of one embodiment can be usefully incorporated into other embodiments without further description.

[0011]

[0016] Many of the details, dimensions, angles, and other features shown in the drawings are merely illustrative of specific implementations. Therefore, other implementations may have different details, components, dimensions, angles, and features without departing from the essence or scope of this disclosure. In addition, further implementations of this disclosure may be carried out without some of the details described below.

[0012]

[0017] This disclosure discloses a system and method for controlling pressure in the foreline of a processing system. Fluctuations in the foreline pressure of a processing system present a challenge for controlling pressure within the processing chamber and ensuring uniformity within the processing of semiconductor wafers. The problemIt has been found that this can lead to [variable issues]. To address these issues, this specification discloses a foreline pressure control system that enables control of the foreline pressure in a manner that beneficially reduces pressure fluctuations within the processing chamber. The foreline pressure control system can communicate with a processing system controller to accommodate changes in setpoints at various stages of substrate processing within the processing system, thereby improving the uniformity of processing through various stages of substrate processing where the internal processing chamber pressure may change. The foreline pressure system utilizes control valves and / or gas injection, along with a pressure feedback control sequence, to maintain the pressure within the foreline at a desired target setpoint. This results in more uniform substrate processing, improved yield, reduced waste, increased processing efficiency, and reduced ownership costs.

[0013]

[0018] Figure 1 shows a schematic diagram of a processing system 150, including a processing chamber 100 connected to a foreline pressure control system 140. The foreline pressure control system 140 is configured to control the pressure in the foreline 130 connected to the processing chamber 100, thereby reducing pressure fluctuations within the processing chamber itself. The processing chamber 100 is a vacuum processing chamber such as an etching reactor processing chamber, an ion implantation chamber, a deposition chamber, a plasma processing chamber, or an atomic layer deposition chamber. The processing chamber 100 may be a processing chamber for performing a deposition process, etching process, annealing process, or cleaning process on a substrate 120, for example. Typical chambers for performing a deposition process include, for example, plasma-enhanced chemical vapor deposition (PECVD) chambers, chemical vapor deposition (CVD) chambers, or physical vapor deposition (PVD) chambers. Typical chambers for performing an etching process include, for example, reactive ion etching chambers and inductively coupled plasma etching chambers.

[0014]

[0019] The processing chamber 100 has a chamber body 102 having an internal space 104, and a substrate support 118. The gas source 106 is supplied to the chamber body by a gas inlet 108 to provide, for example, a reactive gas used for processing. 102 The plasma 116 can be formed within the internal space 104 of the processing chamber 100 by applying RF power to the plasma generator 110. The RF power is supplied from the RF power supply 114 to the plasma generator 110 through the matching circuit 112.

[0015]

[0020] Residual gases, such as unreacted or reacted gases from the internal space 104 of the processing chamber 100, are exhausted from the internal space 104 through the chamber exhaust port 122. A throttle valve 124 is positioned close to the chamber exhaust port 122 to control the pressure in the internal space 104 of the processing chamber 100. The exhaust port of the throttle valve 124 is connected to the inlet of the chamber exhaust pump 126. The exhaust port of the chamber exhaust pump 126 is connected to the foreline 130.

[0016]

[0021] The foreline 130 functions as a conduit that guides residual gas from the processing chamber 100 through the chamber exhaust pump 126 and throttle valve 124. The foreline pressure control system 140 is connected to the foreline 130 downstream of the chamber exhaust pump 126 and upstream of the foreline pump 136. The foreline pump 136 is used to maintain flow in the foreline 130 away from the processing chamber 100.

[0017]

[0022] Residual gases in the foreline 130 may contain materials that are undesirable to release into the atmosphere or materials that could damage downstream equipment such as the foreline pump 136. For example, residual gases may contain compounds and / or etchants from the etching process. Residual gases unsuitable for atmospheric release can be conditioned to a safe state via an optional pre-pump removal system 134. The optional pre-pump removal system 134 may be located upstream of the foreline pump 136 on the foreline 130. The pre-pump removal system may include, but is not limited to, units that can assist in the treatment of process gases, which may be plasma or absorption type. Other removal systems may be used to treat residual gases downstream of the foreline pump 136. Figure 1 shows an optional exhaust treatment system. Examples of conventional removal systems include traps and / or scrubbers.

[0018]

[0023] Generally, the processing chamber 100 is communicably connected to a system controller 128. The system controller 128 is configured to control the operation of the processing chamber 100. The system controller 128, or other suitably proposed controllers, may be configured to control the pressure in the foreline 130. In one embodiment, a controller configured to control the pressure in the foreline 130 is configured to determine or measure the pressure in the foreline 130, compare the determined or measured pressure to a setpoint, and, based on the comparison between the determined or measured foreline pressure and the setpoint, instruct a control system that interacts with the foreline 130. The setpoint can be read from a memory accessible to the controller. The memory may contain a process recipe for controlling the processing in the processing chamber. The process recipe may contain different foreline pressure step points associated with different stages of the process recipe, each stage of the process recipe causing the processing chamber to undergo different operation and / or processing conditions, such as different processing chamber pressures and different processing chamber gas compositions. If a system controller 128 controls the operation of the processing chamber and another controller controls the pressure in the foreline 130, setpoints related to different processing stages are transmitted from the system controller 128 to a second controller different from the first controller. Setpoints at one stage of processing may differ from setpoints at a second stage. For example, but not limited to, setpoints at a first stage, such as processing a substrate in the presence of a first gas, may differ from setpoints at a second stage of processing, such as processing a substrate in the presence of a second gas. In another non-limiting example, setpoints at a first stage, such as plasma processing a substrate, may differ from setpoints at a second stage of processing, such as cleaning the chamber after removing the substrate.

[0019]

[0024] In one embodiment, the processing chamber 100 is communicatively coupled to a single controller (e.g., system controller 128) configured to instruct pressure control to a pressure control device capable of adjusting the pressure within the foreline 130. In some embodiments, the processing chamber controller (system controller 128 shown in FIG. 1) may be configured to instruct a foreline pressure control system 140 that may or may not include a second controller separate and different from the system controller 128.

[0020]

[0025] In one embodiment shown in FIG. 1, the processing chamber 100 is communicatively coupled to a system controller 128. The system controller 128 may include, for example, hardware and software that enable an operator to instruct, set, start, or stop the desired functions of the system. The system controller 128 controls the operation of the processing chamber 100 (e.g., the operation of the throttle valve 124, the first pump 126, the RF power supply 114, the gas source 106, etc.), enabling the substrate 120 to be processed within the processing chamber 100.

[0021]

[0026] During the processing of the substrate 120, the system controller 128 controls various internal conditions of the processing chamber 100, such as pressure and temperature. For example, when the substrate 120 is etched within the processing chamber 100, the system controller 128 controls the pressure within the internal space 104 during various stages of the etching process. Each stage of the etching process may have a different target internal space pressure that is maintained via the operation of the gas source 106, the throttle valve 124, and / or the first pump 136 as commanded by the system controller 128. For example, at one stage of the etching process, it may have a first target internal space pressure that is different from the second target internal space pressure at another stage of the etching process. Each target internal space pressure has an associated foreline target pressure setpoint.

[0022]

[0027] The system controller 128 is configured to provide a foreline target pressure setpoint to the foreline pressure system controller 144 of the foreline pressure control system 140. The system controller 128 transmits a signal indicating the foreline target pressure setpoint to the foreline pressure control system 140. The foreline pressure control system 140 operates to maintain the foreline pressure at or near the foreline target pressure setpoint. The foreline pressure system controller 144 of the foreline pressure control system 140 includes a pressure sensor 142 and a pressure adjustment device 146. The pressure sensor 142 provides foreline pressure information to the foreline pressure system controller 144. The foreline pressure system controller 144 controls the operation of the pressure adjustment device 146 to adjust the pressure within the foreline 130 based on the foreline target pressure setpoint. The foreline pressure information provided to the foreline pressure system controller 144 by the sensor 142 can also be used to control the operation of the pressure adjustment device 146 that adjusts the pressure within the foreline 130 based on the sensed foreline pressure.

[0023]

[0028] FIG. 2 shows an exemplary schematic diagram of the foreline pressure control system 140. As described above, the foreline pressure control system 140 includes a pressure sensor 142, a foreline pressure system controller 144, and a pressure adjustment device 146. The pressure adjustment device 146 shown in FIG. 2 includes an actuator 248 coupled to a regulating valve 246.

[0024]

[0029] In general, the pressure sensor 142 may be a pressure sensor suitable for measuring the pressure in the foreline 130. In other words, the pressure sensor 142 may be a pressure sensor suitable for determining the pressure in the foreline 130. The pressure is mechanically sensed and can later be converted into a digital or serial softlink signal used for feedback signals via an output wire 252 that connects the pressure sensor 142 to the foreline pressure system controller 144. The output wire 252 is communicatively coupled to the foreline pressure system controller 144 to provide the foreline pressure system controller 144 with an input pressure signal. The input pressure signal acts as a condition adjuster for the pressure sensor 142 to adjust the foreline 130 pressure by adjusting the control valve 246.

[0025]

[0030] The foreline pressure system controller 144 is configured to receive communications from the system controller 128 (shown in Figure 1) via an input wire 256 and from the pressure sensor 142 via an output wire 252. The foreline pressure system controller 144 processes the communications and outputs a voltage signal to the actuator 248. The actuator 248 is mechanically coupled to the control valve 246. For example, the foreline pressure system controller 144 may receive a signal from the system controller 128 indicating a desired foreline 130 pressure, i.e., a setpoint. The pressure sensor 142 provides the foreline pressure system controller 144 with the current pressure state via the output wire 252. The sensed pressure signal is compared by the foreline pressure system controller 144 to the setpoint. Based on the comparison, the foreline pressure system controller 144 commands the actuator 248 via the output line 254 to operate the throttle control valve 246 to increase, decrease, or maintain the pressure in the foreline 130. The pressure feedback provided to the foreline pressure system controller 144 by the pressure sensor 142, along with the rapid response of the throttle control valve 246, makes it possible to maintain a desired setpoint pressure within the foreline 130.

[0026]

[0031] The actuator 248 may be a motor, a pneumatic or hydraulic actuator, or another suitable actuator for controlling the operation of the control valve 246. The control valve 246 may be one of various typical valves suitable for controlling the pressure in a gas line, such as a butterfly valve, ball valve, V-ball valve, gate valve, globe valve, or angle valve. The control valve 246 may be fast-acting, having a throttling speed of less than one second.

[0027]

[0032] Figure 3 shows an exemplary schematic diagram of another foreline pressure control system 300. The foreline pressure control system 300 can be used as a replacement for the foreline pressure control system 140 shown in Figure 1. Like the foreline pressure control system 140, the foreline pressure control system 300 includes a pressure sensor 142, a foreline pressure system controller 144, and a pressure regulating device 146. The pressure regulating device 146 of the foreline pressure control system 300 shown in Figure 3 includes a mass flow controller 346, a gas source 306, and an injection port 358. The injection port 358 is located on the foreline 130. The operation of the mass flow controller 346 is controlled by the foreline pressure system controller 144 to regulate the amount of gas supplied into the foreline 130 through the injection port 358 by the gas source 306.

[0028]

[0033] Similar to the operation of the control valve 246 in Figure 2, the foreline pressure system controller 144 receives communication from the system controller 128 in Figure 1 via the input wire 256 and from the pressure sensor 142 via the output wire 252. The foreline pressure system controller 144 processes the communication and sends a voltage signal via the output signal line 354 to the mass flow controller 346, which controls the amount of gas flowing from the gas source 306 to the injection port 358 and the foreline 130. The gas source 306 is connected to the inlet of the mass flow controller 346 via the gas supply line 308. The gas line 310 connects the gas output of the mass flow controller 346 to the injection port 358 and the pressure sensor 142Based on the pressure sensed by the foreline 130 The gas source 306 can be controlled to deliver gas to the foreline 130 at a dynamic speed that allows the internal pressure to be maintained or adjusted to a desired target setpoint.

[0029]

[0034] In one embodiment, the gas source 306 may be one or more cylinder gas bottles. In another embodiment, the gas source 306 may be an equipment gas provided in a building. The gas source 306 may be configured to provide inert gases such as helium, neon, and argon. However, other non-reactive gases such as air may also be used.

[0030]

[0035] Figure 4 shows an exemplary schematic diagram of the foreline pressure control system 400. The foreline pressure control system 400 can be used as a replacement for the foreline pressure control system 140 shown in Figure 1. Like the foreline pressure control system 140, the foreline pressure control system 400 includes a pressure sensor 142, a foreline pressure system controller 144, and a pressure regulating device 146. The pressure regulating device 146 of the foreline pressure control system 400 shown in Figure 4 includes both an actuator 248 connected to a control valve 246 and a gas source 306 connected to an injection port 358 by a mass flow controller 346. The injection port 358 is located on the foreline 130. The operation of the mass flow controller 346 and the control valve 246 is controlled by the foreline pressure system controller 144 to adjust the amount of gas supplied to the foreline 130 through the injection port 358 by the gas source 306, and / or to control the conductance in the foreline 130 using the control valve 246.

[0031]

[0036] The foreline pressure system controller 144 can receive communications from the system controller 128 (shown in Figure 1) via an input wire 256 and from the pressure sensor 142 via an output wire 252. The foreline pressure system controller 144 processes communications and controls the operation of one or both of the mass flow controller 346 and the throttle control valve 246 to control the pressure in the foreline 130. In one embodiment, a voltage signal is provided to one or both of the actuator 248 and the throttle control valve 246, via an output line 254, to open or close, or somewhere in between, and / or to allow a determined amount of gas from the gas source 306 to flow through the mass flow controller 346 to the injection port 358. The gas source 306 is connected to the injection port of the mass flow controller 346 via a gas supply line 308. A gas line 310 connects the output of the mass flow controller 346 to the injection port 358 and to a target setpoint and pressure sensor provided by the system controller 128. 142 Based on the pressure status display sensed by the foreline 130 The gas source 306 is configured to deliver gas to the foreline 130 in a controllable manner at a dynamic speed that allows the internal pressure to be maintained or adjusted to a desired pressure. Feedback adjustments are continuously received by the foreline pressure system controller 144 to achieve foreline 130 pressure control and ultimately pressure control of the processing chamber 100 in Figure 1.

[0032]

[0037] In one embodiment, a feedforward pressure control scheme is envisioned to predict pressure fluctuations. System fluctuations are determined by empirically analyzing the operation of the apparatus during steady-state operation. For example, an initial pressure pulse that starts a downstream apparatus while the processing chamber is processing a substrate may cause a pressure fluctuation of, for example, 5 mTorr within the processing chamber until the pressure is regulated using an embodiment of the foreline pressure control system 300. This regulation is recorded in the control logic and used to predict the pressure fluctuation at the next startup of the apparatus, thereby reducing or substantially eliminating system pressure fluctuations.

[0033]

[0038] In one embodiment of the foreline pressure control system 300, the feedback signal may be delayed, for example, through the use of a timer algorithm or a valve position indicator. In the embodiment shown in Figure 4, both gas injection into the foreline 130 and throttling of the flow within the foreline 130 are used in combination for controlling the foreline pressure. For example, the system controller 128 provides the foreline pressure system controller 144 with a first target setpoint corresponding to a first time or stage of the process being carried out in the processing chamber 100. The initial response to the control pressure may be provided with a voltage signal to the throttle control valve 246 of the actuator 248. If the target setpoint pressure is not achieved, the foreline pressure system controller 144 may then initiate a voltage signal to the mass flow controller 346 so that a determined amount of gas is injected into the foreline 130. In another embodiment, the mass flow controller is used first to change the foreline pressure, followed by the control valve as needed. In yet another embodiment, a control valve stem position indicator is used.

[0034]

[0039] In yet another embodiment, the system controller 128 provides the foreline pressure system controller 144 with a second target setpoint corresponding to a second time or stage of the process being executed in the processing chamber 100, which is different from the previous time / stage. The foreline pressure system controller 144 commands one or both of the control valve 246 and the mass flow controller 346 to start the foreline pressure along the second setpoint.

[0035]

[0040] Figure 5 shows an exemplary schematic diagram of a network 550 of processing chambers 500. In the example shown in Figure 5, three processing chambers 500a, 500b, and 500c are shown, but the network 550 comprises one or more processing chambers 500 connected to a common foreline 560. In one embodiment, each of the processing chambers 500a, 500b, and 500c of the network 550 of processing chambers 500 is connected to a common foreline by one of the foreline segments 530a, 530b, and 530c, respectively. 560 Figure 5 shows independent foreline pressure control systems 540a, 540b, and 540c, but each foreline 530a, 530b, and 530c may be connected together upstream of a single foreline pressure control system. Figure 5 shows a common optional pump pre-removal system 534, foreline pump 536, and optional exhaust treatment system 532, but there may be independent optional pump pre-removal systems 534, foreline pump 536, and optional exhaust treatment systems 532 for each of the processing chambers 500a, 500b, and 500c in the processing chamber network 550. In another embodiment, the processing chambers 500a, 500b, and 500c are connected in parallel to a single foreline pressure control system and a plurality of downstream devices, for example, one path may be an optional pre-pump removal system 534 and a foreline pump 536, and the other path may be a foreline pump 536 and an optional exhaust treatment device 532.

[0036]

[0041] The processing chambers 500a, 500b, and 500c may experience pressure fluctuations during normal processing operations. Each processing chamber 500a, 500b, and 500c is regulated by independent system controllers 528a, 528b, and 528c, which communicate with their respective foreline pressure control systems 544a, 544b, and 544c, to regulate the pressure within the forelines 530a, 530b, and 530c. In one embodiment, the system controllers 528a, 528b, and 528c are operable to maintain pressure fluctuations within each processing chamber 500a, 500b, and 500c below 50 mTorr. Thus, embodiments of the foreline pressure control systems 544a, 544b, and 544c may be any combination, as shown in Figures 2, 3, or 4, to control the pressure within the architecture of the forelines 530a, 530b, and 530c.

[0037]

[0042] Figure 6 is a flowchart of method 600 for controlling pressure in a foreline such as the foreline 130 of a processing system 150, 660, or other suitable processing chamber. Method 600 begins in operation 610 by measuring a first foreline pressure downstream of a first pump connected to the exhaust port of the first processing chamber at a first time. As described above, the first foreline pressure may be measured by a pressure sensor 142 and provided to a foreline pressure system controller 144. The first time may correspond to a first stage of a process being carried out in the processing chamber 100.

[0038]

[0043] In operation 620, the measured first foreline pressure is compared by the foreline pressure control system to a first foreline pressure setpoint. The first foreline pressure setpoint can be provided to the foreline pressure control system in any suitable way. In one embodiment, the foreline pressure control system obtains the first foreline pressure setpoint from a system controller that controls the operation of the processing system. The first foreline pressure setpoint may relate to a specific stage or time in the substrate process being performed in the processing system. In some embodiments, multiple foreline pressure setpoints are provided to the foreline pressure control system from the system controller, either collectively or over time, where each foreline pressure setpoint relates to a different time or stage in the substrate process being performed in the processing system. Different times or stages in the substrate process being performed in the processing system may result in different pressures in the processing chamber.

[0039]

[0044] In operation 630, the first foreline pressure is regulated by the operation of a first pressure control system, which is coupled to the foreline downstream of the first pump, based on a comparison between the measured first foreline pressure and a first setpoint. The first foreline pressure may be regulated by changing the conductance of the foreline by the operation of a throttle valve located downstream of the pump connected to the chamber exhaust. Additionally or alternatively, the first foreline pressure may be regulated by introducing gas into the foreline located downstream of the pump connected to the chamber exhaust.

[0040]

[0045] Method 600 may also include measuring a second foreline pressure downstream of a second pump connected to the exhaust port of a second processing chamber, comparing the measured second foreline pressure to a second setpoint, and adjusting the second foreline pressure by a second pressure control system that is in conjunction with the foreline downstream of the second pump, based on the comparison between the measured second foreline pressure and the second setpoint.

[0041]

[0046] Thus, a method and system for controlling pressure in the foreline is disclosed, independently of the operation of the pump and throttle valve connected immediately downstream of the chamber exhaust. The foreline pressure control system reduces pressure fluctuations both within the foreline and within the processing chamber. The foreline pressure control system accommodates changes in setpoints at various stages of substrate processing, enabling improved processing uniformity, increased yield, reduced waste, improved processing efficiency, and reduced ownership costs.

[0042]

[0047] While the above description applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A processing system, Controller and A first processing chamber connected to the controller and having an exhaust port, A first pump having an inlet and an exhaust port, wherein the inlet of the first pump is connected to the exhaust port of the first processing chamber, A foreline connected to the exhaust port of the first pump, The system comprises a first pressure control system that operates in conjunction with the foreline downstream of the first pump, The first pressure control system is located downstream of the first pump and is in fluid communication with the foreline, and the first pressure control system includes a foreline pressure system controller that is capable of controlling the pressure in the foreline independently of the operation of the first pump, and the foreline pressure system controller Determining the first foreline pressure in the foreline downstream of the first pump, The determined first foreline pressure is compared with the first setpoint, Based on a comparison between the determined first foreline pressure and the first setpoint, the system provides commands to adjust the first foreline pressure. A processing system configured to perform the following actions.

2. The processing system according to claim 1, wherein the foreline pressure system controller is configured to receive the first setpoint from the controller configured to control the operation of the first processing chamber.

3. The first pressure control system is A pressure sensor connected to the foreline pressure system controller, A foreline pressure adjustment device is connected to the foreline pressure system controller and configured to control the pressure in the foreline based on pressure measurements obtained by the pressure sensor. The processing system according to claim 2, comprising:

4. The processing system according to claim 3, wherein the foreline pressure adjustment device includes a control valve disposed in the foreline.

5. The processing system according to claim 4, wherein the control valve has an aperture speed of less than 1 second.

6. The processing system according to claim 3, wherein the foreline pressure regulating device includes a gas injection system configured to introduce gas into the foreline downstream of the first pump.

7. The processing system according to claim 6, wherein the gas injection system further comprises a mass flow controller.

8. The processing system according to claim 6, wherein the gas injection system further includes a gas source.

9. The processing system according to claim 8, wherein the gas source is configured to supply nitrogen, air, helium, neon, or argon.

10. The processing system according to claim 8, wherein the gas source includes at least one of equipment gas supply, ambient air, or a gas cylinder.

11. The processing system according to claim 2, wherein the controller is configured to output the first setpoint and the second setpoint, which are based on the target foreline pressure from various stages of the process performed in the first processing chamber, to the foreline pressure system controller.

12. The processing system according to claim 3, wherein the foreline pressure adjustment device is operable to maintain the pressure of the foreline within 50 mTorr from the first set point.

13. The processing system according to claim 1, wherein the first setting point is a foreline target pressure setting point associated with a time or stage of a substrate process being performed in the processing system, and the first pressure control system operates to maintain the pressure in the foreline at or near the foreline target pressure setting point.

14. A removal system connected to the foreline via fluid flow downstream of the first pressure control system. The processing system according to claim 1, further comprising the following:

15. The processing system according to claim 1, wherein the foreline comprises a first feed section and a second feed section connected to a main portion, the first feed section being connected to a first processing chamber, and the second feed section being connected to a second processing chamber.

16. A second pressure control system connected to the second feed section, which is capable of controlling the pressure within the second feed section independently of the first pressure control system. The processing system according to claim 15, further comprising the following:

17. The processing system according to claim 16, wherein the first pressure control system comprises a pressure sensor, a control valve, and a foreline pressure system controller, and the second pressure control system comprises a mass flow controller, a gas source, and a gas injection port.

18. A processing system, A first processing chamber having an exhaust port, A first pump having an inlet connected to the exhaust port of the first processing chamber and an exhaust port connected to the inlet of the first foreline segment, A second processing chamber having an exhaust port, A second pump having an inlet connected to the exhaust port of the second processing chamber and an exhaust port connected to the inlet of the second foreline segment, A foreline connected to the exhaust port of the first foreline segment and the second foreline segment, A first pressure control system that is linked to the first foreline segment, A second pressure control system that is linked to the second foreline segment and A processing system comprising: a first pressure control system that is operable to control the pressure in the first foreline segment independently of the operation of the first pump and the second pump, and a second pressure control system that is operable to control the pressure in the second foreline segment independently of the control of the pressure in the first foreline segment.

19. Removal system connected to the aforementioned foreline The processing system according to claim 18, further comprising the following:

20. A method for controlling the pressure in a processing system according to any one of claims 1 to 17, To measure the first foreline pressure downstream of the first pump connected to the exhaust port of the first processing chamber, The measured first foreline pressure is compared with the first setpoint, Based on a comparison between the measured first foreline pressure and the first setpoint, the first foreline pressure is adjusted by a first pressure control system that operates in conjunction with the foreline downstream of the first pump. Methods that include...

21. Adjusting the first foreline pressure, Based on the above comparison, the control valve is throttled, or gas is injected into the foreline. The method according to claim 20, further comprising:

22. To measure the second foreline pressure downstream of the second pump connected to the exhaust port of the second processing chamber, The measured second foreline pressure is compared with the second setpoint, Based on a comparison between the measured second foreline pressure and the second setpoint, the second foreline pressure is adjusted by a second pressure control system that operates in conjunction with the foreline downstream of the second pump. The method according to claim 20, further comprising:

23. Measuring the second foreline pressure downstream of the second pump, The measured second foreline pressure is compared with the second setpoint, Based on a comparison between the measured second foreline pressure and the second setpoint, the second pressure control system adjusts the second foreline pressure. The method according to claim 20, further comprising the first setting point being based on a first stage of a process being performed in the first processing chamber, and the second setting point being based on a second stage of the process being performed in the second processing chamber.

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