Method for operating semiconductor manufacturing equipment and semiconductor manufacturing equipment

Abstract

The present invention provides a technology for improving the throughput of cleaning the inner walls of a processing chamber of a semiconductor fabrication apparatus. Provided is a method for operating a semiconductor fabrication apparatus that processes a wafer placed in a processing chamber, the method including: a step for placing another wafer inside the processing chamber after one wafer is finished being processed; and a step for irradiating the interior of the processing chamber with electromagnetic waves comprising a reduced amount of wavelengths that are smaller than a prescribed value while in the state in which the other wafer has been placed inside the processing chamber. Also provided is a semiconductor fabrication apparatus comprises: a processing chamber; a sample stage on which is laid a semiconductor wafer placed inside the processing chamber; a lamp that radiates electromagnetic waves with which to irradiate the interior of the processing chamber; and a shield which is disposed between the lamp and the processing chamber and which reduces the amount of wavelengths smaller than a prescribed value. The semiconductor fabrication apparatus comprises a control device that drives the lamp while in a state in which another wafer has been placed inside the processing chamber after one wafer is finished being processed, causing the interior of the processing chamber to be irradiated with electromagnetic waves through the shield.

Description

Technical Field

[0001] The present disclosure relates to an operation method of a semiconductor manufacturing apparatus and a semiconductor manufacturing apparatus, and particularly to an operation method of a semiconductor manufacturing apparatus used for isotropic processing of a semiconductor, which is an effective technique applicable to a method for cleaning the inner wall of a processing chamber inside a vacuum vessel of a semiconductor manufacturing apparatus.

Background Art

[0002] In the manufacturing process of three-dimensional semiconductor devices, an isotropic dry etching technique using active species such as gas or radicals is essential. Since this method does not use a chemical solution, it can prevent the collapse of patterns due to the surface tension of the chemical solution. With the development of this technology, it is expected that high integration in the stacking direction will accelerate in the future.

[0003] In the isotropic dry etching technique, an adsorption / desorption type etching method has been devised as a method for precisely controlling the etching amount. This method is an etching method in which an etchant such as gas or radicals is adsorbed on the surface of the film to be processed and reacted, and then the reaction product of the film to be processed and the etchant is desorbed and removed by heating the wafer.

[0004] In this method, the etching amount in one cycle of adsorption / desorption is constant and small, and it is possible to control the etching amount with high accuracy by repeating the cycle.

[0005] As a method for heating the wafer when removing the reaction product, a method of heating the stage on which the wafer is placed is common, but there is a problem that the heat capacity of the stage is large and it takes time to heat the wafer, so the throughput of the process decreases.

[0006] As a technology for solving this problem, a high-speed heating technology for a wafer using electromagnetic waves such as infrared light irradiation is known (for example, see Patent Document 1).

Prior Art Documents

Patent Documents

[0007] [Patent Document 1] Japanese Patent Publication No. 2016-178257 [Overview of the project] [Problems that the invention aims to solve]

[0008] Isotropic dry etching equipment used in semiconductor manufacturing can be broadly classified into two types: radical etching equipment equipped with a plasma generation unit, and gas etching-only equipment that does not have a plasma generation unit.

[0009] In these isotropic dry etching systems, aging and in-situ cleaning of the processing chamber inside the vacuum vessel are performed to stabilize the etching rate and remove foreign matter and excess etchant that adheres to the inner wall of the processing chamber during the etching process.

[0010] Different methods are used for aging and cleaning the processing chamber in radical etching equipment and gas etching-only equipment, respectively.

[0011] In radical etching systems equipped with a plasma generation unit, gases such as sulfur hexafluoride (SF6), nitrogen trifluoride (NF3), and oxygen (O2) are often converted into plasma, and the resulting F radicals and F ions are used to perform in-situ cleaning of the inner wall of the processing chamber.

[0012] On the other hand, in the case of gas etching equipment that does not have a plasma generation unit, cleaning methods are used that involve heating the inner wall of the processing chamber to vaporize the adhering foreign matter, or introducing a highly reactive fluoride gas to react with the foreign matter and vaporize it.

[0013] In these cleaning methods, plasma and gas-based cleaning techniques may, in some cases, generate secondary contaminants or particles. Furthermore, there are issues with the corrosion resistance of equipment materials to reactive gases.

[0014] In cleaning methods that heat the inner wall of the processing chamber, it is structurally difficult to heat the entire inner wall of the processing chamber. In particular, since it is not easy to change the temperature of the stage on which the wafer is placed, there is a problem that foreign matter vaporized by heating will re-adhere to cold spots created inside the processing chamber.

[0015] This disclosure is primarily intended to address the above-mentioned problems and to provide a technology for improving the throughput of cleaning the inner walls of processing chambers in semiconductor manufacturing equipment. More specifically, this disclosure aims to provide a technology for improving the throughput of inner wall cleaning in isotropic dry etching equipment. [Means for solving the problem]

[0016] A method for operating a semiconductor manufacturing apparatus according to one embodiment of this disclosure is: A method for operating a semiconductor manufacturing apparatus that processes wafers placed inside a processing chamber within a vacuum vessel, A step of placing another wafer inside the processing chamber after processing of one wafer has been completed, The process includes the step of irradiating the inside of the processing chamber with electromagnetic waves having a reduced amount of wavelengths smaller than a predetermined value, while the other wafer is placed inside the processing chamber.

[0017] Furthermore, a semiconductor manufacturing apparatus according to one embodiment of the present disclosure, A semiconductor manufacturing apparatus comprising: a processing chamber located inside a vacuum vessel; a sample stage located inside the processing chamber on which a semiconductor wafer is placed above its upper surface; a lamp located above the processing chamber that emits electromagnetic waves irradiated into the processing chamber; and a shield located between the lamp and the processing chamber that reduces the amount of wavelengths smaller than a predetermined value, wherein the wafer is processed inside the processing chamber. The system includes a control device that drives the lamp to irradiate the inside of the processing chamber with electromagnetic waves through the shield after the processing of one wafer has been completed and another wafer has been placed inside the processing chamber.

[0018] Furthermore, an operating method for a semiconductor manufacturing apparatus according to one embodiment of the present disclosure includes a chamber cleaning method comprising the steps of: placing a wafer on a stage arranged inside a processing chamber; cooling the wafer with the stage; heating the inner wall of the processing chamber with an electromagnetic wave heater or a wall heater; and vaporizing foreign matter adhering to the inner wall of the processing chamber by the heating step and adsorbing it onto the cooled wafer.

[0019] A semiconductor manufacturing apparatus according to one embodiment of the present disclosure comprises a processing chamber, a heater disposed outside the processing chamber for heating a wafer or inner wall inside the processing chamber with electromagnetic waves, a removable filter disposed between the heater and the processing chamber for selecting the wavelength components of electromagnetic waves reaching the processing chamber from the heater, a stage disposed inside the processing chamber and located below the wafer, and other gas introduction and exhaust systems necessary for etching. [Effects of the Invention]

[0020] According to one embodiment of this disclosure, a technology can be provided to improve the cleaning throughput of the inner wall of a processing chamber in a semiconductor manufacturing apparatus. Furthermore, in a semiconductor manufacturing apparatus equipped with a heater that heats the wafer or the inner wall of the processing chamber using electromagnetic waves, a technology can be provided to efficiently clean the inner wall of the processing chamber. Problems, configurations, and effects other than those described above will be clarified by the following description of the embodiments. [Brief explanation of the drawing]

[0021] [Figure 1] This is a cross-sectional view showing the schematic configuration of a semiconductor manufacturing apparatus according to the first embodiment. [Figure 2] It is a flowchart showing an example of the process flow in a semiconductor manufacturing apparatus according to the first embodiment. [Figure 3] It is a cross-sectional view showing a schematic configuration of a semiconductor manufacturing apparatus according to the second embodiment. [Figure 4] It is a graph schematically showing the relationship between the spectrum of electromagnetic waves radiated from a halogen lamp and the spectral emissivity of silicon and alumina in a semiconductor manufacturing apparatus according to the second embodiment. [Figure 5] It is a graph schematically showing the relationship between the spectrum of electromagnetic waves radiated from a halogen lamp after passing through a silicon filter and the spectral emissivity of silicon and alumina in a semiconductor manufacturing apparatus according to the second embodiment. [Figure 6] It is a flowchart showing an example of the process flow in a semiconductor manufacturing apparatus according to the second embodiment. [Figure 7] It is a cross-sectional view showing a schematic configuration of a semiconductor manufacturing apparatus according to the third embodiment. [Figure 8] It is a flowchart showing an example of the process flow in a semiconductor manufacturing apparatus according to the third embodiment. [Figure 9] It is a cross-sectional view showing a schematic configuration of a semiconductor manufacturing apparatus according to the third embodiment. [Figure 10] It is a diagram schematically showing an example of a main part of a semiconductor manufacturing apparatus according to the fourth embodiment.

Embodiments for Carrying Out the Invention

[0022] First, the background of the study by the present inventors will be described.

[0023] <Background of the Study by the Present Inventors> In the semiconductor manufacturing process, for example, processes such as pattern transfer, etching, cleaning, and planarization are included for wafers made of silicon, gallium arsenide, etc. Here, attention is paid to the apparatus and method used in the etching process.

[0024] As mentioned above, when cleaning foreign matter adhering to the inner wall of the processing chamber, which serves as the processing chamber, heating of the inner wall using a wall heater is used. However, it is difficult to heat the entire inner wall, and there is a problem in that detached foreign matter and excess etchant reattach to cold spots that have formed inside the processing chamber.

[0025] To heat the entire inner wall of the processing chamber, a method can be considered that uses an electromagnetic wave heater to assist in heating the inner wall of the processing chamber by a wall heater. However, it takes time to completely exhaust the foreign matter that has vaporized due to the heating. If the heater is turned off before the exhaust is complete, the foreign matter that could not be exhausted will reattach to low-temperature areas such as around the stage, resulting in a problem where the cleaning is not completed.

[0026] In light of these circumstances, the Disclosing Parties have conducted intensive studies and, as a result, discovered a technology for efficiently cleaning the inner wall of a processing chamber in a semiconductor manufacturing apparatus equipped with a heater that heats the wafer or the inner wall of the processing chamber using electromagnetic waves and a stage for cooling the wafer, by making part or all of the wafer a cold spot.

[0027] Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, elements, members, or parts with the same configuration will be denoted by the same reference numerals, and repeated descriptions will be omitted unless necessary. Furthermore, the following embodiments are merely examples and do not limit the technical scope of the present invention in any way. [Examples]

[0028] Example 1 (First Embodiment) of this disclosure will be described below.

[0029] <Example of the configuration of a semiconductor manufacturing apparatus according to the first embodiment> Figure 1 is a schematic side view showing the configuration of the semiconductor manufacturing apparatus 1 according to the first embodiment.

[0030] As shown in Figure 1, the semiconductor manufacturing apparatus 1 includes a processing chamber 2, which is a processing chamber having a generally cylindrical container shape with an opening at the top, and is made of, for example, aluminum. The processing chamber 2 is equipped with a plate-shaped stage 4 for placing wafers 3 inside. The stage 4 is a sample stage for wafers 3. The presence or absence of an electrostatic chuck mechanism for the stage 4 is irrelevant. The processing chamber 2 is located inside the vacuum chamber of the semiconductor manufacturing apparatus 1. As shown in an enlarged view in Figure 1, the wafer 3 is configured to be held with a gap between it and the upper surface of the stage 4, which is the sample stage. The stage 4 has, for example, a plurality of pins, and the tips of the plurality of pins 41 are configured to protrude from the upper surface of the stage 4, and the lower surface of the wafer 3 can be launched from the upper surface of the stage 4 by the tips of the plurality of pins 41.

[0031] Inside the stage 4, there is a channel 5 through which a fluid such as water flows to cool the stage 4. By adjusting the temperature of the fluid flowing through channel 5, the temperature of the upper surface of the stage 4 can be adjusted. The upper surface of the stage 4 and the wafer 3 are in thermal contact. The channel 5 and the processing chamber 2 are sealed.

[0032] A top plate 6 is installed on the upper side, or ceiling side, of the processing chamber 2. The top plate 6 is made of, for example, quartz and has the property of transmitting electromagnetic waves. Above the top plate 6, a heater 8 is installed that irradiates electromagnetic waves 7, such as infrared rays, toward the wafer 3 and the inner wall of the processing chamber 2.

[0033] A wall heater 9, such as an electric heating wire, is attached to the outside of the side wall of the processing chamber 2, allowing the inner wall of the processing chamber 2 to be heated as needed.

[0034] An opening 10 is formed in the side wall of the processing chamber 2 for supplying gas into the processing chamber 2. A gas supply source 11, such as a gas cylinder, is installed outside the processing chamber 2. The opening 10 and the gas supply source 11 are in communication via a mass flow controller 12. The operation of the mass flow controller 12 allows the gas flow rate to be controlled and the gas to be introduced into the processing chamber 2.

[0035] An opening 13 is formed at the bottom of the processing chamber 2 for discharging gas and particles from inside the processing chamber 2. A dry pump 14 is installed outside the processing chamber 2 for sucking in gas and particles. The opening 13 and the dry pump 14 are connected via a variable valve 15. While the dry pump 14 is operating, the variable valve 15 can be used to discharge gas and particles from inside the processing chamber 2, thereby controlling the gas pressure inside the processing chamber 2.

[0036] <Example of cleaning in a semiconductor manufacturing apparatus according to the first embodiment> Next, we will explain the flow of processing (operation method of the semiconductor manufacturing apparatus) in the semiconductor manufacturing apparatus 1 with the above configuration.

[0037] Figure 2 is a flowchart showing an example of the processing flow in the semiconductor manufacturing apparatus 1 according to the first embodiment.

[0038] As a premise, we assume that after the loading, etching, and unloading of silicon (Si) wafers, foreign matter such as excess etchant adheres to the inner wall of the processing chamber 2. In other words, in the semiconductor manufacturing apparatus 1, after the processing of one wafer is completed, a process is performed in which another wafer (3) is placed on the stage 4 inside the processing chamber 2, which acts as the processing room. That is, one wafer and another wafer (3) will be placed on the stage 4, which is the sample stage for wafer 3.

[0039] As shown in Figure 2, first, in step S101, another wafer 3 is placed on the mounting surface on the stage 4. Specifically, a robot or the like transports the wafer 3 from the load lock chamber to the processing chamber 2 and places the wafer 3 on the mounting surface on the stage 4.

[0040] Next, in step S102, the temperature of the fluid flowing inside the channel 5 is adjusted to control the temperature of the upper surface of the stage 4 to a low temperature, for example, -20°C to -40°C, thereby cooling the wafer 3.

[0041] Next, in step S103, the inner wall of the processing chamber 2 is heated to, for example, 100°C or higher using the heater 8 and the wall heater 9. At this time, since the wafer 3 is cooled by the stage 4, although it is heated by the heater 8, it is kept at a lower temperature compared to the temperature of the inner wall of the processing chamber 2.

[0042] Once heating is complete, in step S104, the wafer 3 is cooled and then removed from the processing chamber 2, which is the processing room.

[0043] According to this first embodiment, in step S102, the inner wall of the processing chamber 2 becomes hot, causing any foreign matter adhering to the inner wall of the processing chamber 2 to vaporize. Some of the vaporized foreign matter is exhausted by the dry pump 14, but any foreign matter that is not exhausted is adsorbed onto the wafer 3 during or after heating. By removing the wafer 3 with the adsorbed foreign matter in step S104, the cleaning of the inner wall of the processing chamber 2 is completed. By allowing the vaporized foreign matter to adsorb onto the wafer that can be removed, it is possible to prevent the foreign matter from re-adhering to the inner wall of the processing chamber 2. [Examples]

[0044] Example 2 (second embodiment) of this disclosure will be described below.

[0045] <Example of the configuration of a semiconductor manufacturing apparatus according to the second embodiment> Figure 3 is a schematic side view showing the configuration of the semiconductor manufacturing apparatus 16 according to the second embodiment.

[0046] In Figure 3, the equipment configurations from 2 to 15 are the same as those of the semiconductor manufacturing apparatus 1 according to the first embodiment, so redundant explanations are omitted.

[0047] In the semiconductor manufacturing apparatus 16, a filter 17, made of, for example, silicon material, is provided between the top plate 6 and the heater 8 for selecting the wavelength components of electromagnetic waves 7.

[0048] The electromagnetic wave 7 has certain wavelength components removed by the filter 17 and reaches the inner wall of the processing chamber 2 or another wafer 3 as electromagnetic wave 19. A drive mechanism 18 is connected to the filter 17, and the filter 17 can also be removed from between the top plate 6 and the heater 8.

[0049] The filter 17 is equipped with a cooling mechanism 20, such as air cooling, which allows for temperature control of the filter 17.

[0050] The following explanation, using diagrams, describes the effect of the presence or absence of a filter 17 on the heating of the wafer 3 and the inner wall of the processing chamber 2 in the semiconductor manufacturing apparatus 16.

[0051] Figures 4 and 5 are schematic graphs showing the relationship between the spectrum of electromagnetic waves 7 radiated from a halogen lamp, which can be considered as an example of a heater 8, and the spectral emissivity of silicon, which can be considered as the material of the wafer 3, and alumina, which can be considered as the material of the inner wall of the processing chamber 2.

[0052] Figure 4 shows a graph when the filter 17 is not located between the top plate 6 and the heater 8. The electromagnetic wave 7 has an intensity peak at a wavelength of approximately 1 μm, and the spectrum of the electromagnetic wave 7 contains absorption wavelength components for silicon and alumina, so the heater 8 can be used to heat the wafer 3 and the inner wall of the processing chamber 2. Conversely, if the output of the heater 8 is increased to heat the inner wall of the processing chamber 2 to a high temperature, the wafer 3 will also become hot at the same time as the inner wall of the processing chamber 2. Therefore, even if the wafer 3 is cooled by the stage 4, it will not be possible to keep it at a low temperature, and the temperature of the wafer 3 may become too high to be a cold spot for adsorbing vaporized foreign matter.

[0053] Figure 5 shows a graph of the case where a silicon filter 17 is placed between the top plate 6 and the heater 8. The filter 17 absorbs wavelengths of electromagnetic waves 7 below approximately 1.3 μm, thus removing the wavelength components of electromagnetic waves 7 that heat the wafer 3. This makes it possible to heat the inner wall of the processing chamber 2 to a high temperature while keeping the wafer 3 at a low temperature.

[0054] When the filter 17 is placed between the top plate 6 and the heater 8, the filter 17 is heated to a high temperature by the electromagnetic waves 7. As the temperature of the filter 17 rises, the absorption wavelength of the filter 17 also changes, so when using the filter 17, it is necessary to use the cooling mechanism 20 to control the temperature of the filter 17 to below a certain temperature.

[0055] <Example of cleaning in a semiconductor manufacturing apparatus according to the second embodiment> Next, we will explain the processing flow (operation method of the semiconductor manufacturing apparatus) in the semiconductor manufacturing apparatus 16 with the above configuration.

[0056] Figure 6 is a flowchart showing an example of the processing flow in the semiconductor manufacturing apparatus 16 according to the second embodiment.

[0057] As a premise, we assume that after the loading, etching, and unloading of Si wafers, foreign matter such as excess etchant adheres to the walls of the processing chamber. In other words, similar to the first embodiment, in the semiconductor manufacturing apparatus 16, after the processing of one wafer is completed, a process is performed in which another wafer (3) is placed on the stage 4 inside the processing chamber 2, which serves as the processing chamber.

[0058] Steps S201, S202, S204, and S205 in the flowchart of the second embodiment shown in Figure 6 are the same processes as steps S101, S102, S103, and S104 in the flowchart of the first embodiment shown in Figure 2. The semiconductor manufacturing apparatus 16 according to the second embodiment is characterized by the processes in steps S203 and S206.

[0059] In step S203, the drive mechanism 18 is used to position the filter 17 between the top plate 6 and the heater 8.

[0060] Next, in step S204, the inner wall of the processing chamber 2 is heated using the heater 8 and the wall heater 9. At this time, the electromagnetic waves 7 radiated from the heater 8 have their wavelength components that heat the wafer 3 removed by the filter 17, and reach the wafer 3 and the inner wall of the processing chamber 2 as electromagnetic waves 19. As a result, the inner wall of the processing chamber 2 can be heated while the wafer 3 remains at a low temperature without being heated. At this time, the filter 17 is cooled by the cooling mechanism 20.

[0061] In other words, in the semiconductor manufacturing apparatus 16, with another wafer 3 placed inside the processing chamber 2, which is a processing room, a process is performed in which electromagnetic waves with a reduced amount of wavelengths smaller than a predetermined value are irradiated into the processing chamber 2 via a filter 17.

[0062] Here, the electromagnetic waves irradiated into the processing chamber 2 are filtered by the filter 17 to reduce the amount of wavelengths less than or equal to 1 μm, for example, to a predetermined value. Alternatively, the electromagnetic waves are filtered by the filter 17 to reduce the amount of wavelengths less than or equal to 1.3 μm, for example, to a predetermined value. In addition, during the process of irradiating the inside of the processing chamber 2 with electromagnetic waves, particles from inside the processing chamber 2 are attached to another wafer 3. Furthermore, the electromagnetic waves are irradiated into the processing chamber 2 while the other wafer 3 is held on a stage 4, which serves as a sample stand, located inside the processing chamber 2. The stage 4 of the sample stand is also maintained at a temperature that cools the other wafer.

[0063] Once heating is complete, in step S205, the wafer 3 is removed from the processing chamber 2, which is the processing room. This removes any foreign matter from inside the processing chamber 2, completing the cleaning process.

[0064] Next, in step S206, the drive mechanism 18 is used to remove the filter 17 from between the top plate 6 and the heater 8.

[0065] According to this second embodiment, it is possible to heat the inner wall of the processing chamber 2 to a high temperature while keeping the wafer 3 at a low temperature. As a result, compared to the first embodiment, the adsorption efficiency of foreign matter onto the wafer 3 is improved, and effects such as a reduction in cleaning time can be expected. [Examples]

[0066] The third embodiment of this disclosure will now be described.

[0067] <Example of the configuration of a semiconductor manufacturing apparatus according to the third embodiment> Figure 7 is a schematic side view showing the configuration of the semiconductor manufacturing apparatus 21 according to the third embodiment.

[0068] Since components 2-5 and 9-15 in the semiconductor manufacturing apparatus 21 shown in Figure 7 are the same as those in the semiconductor manufacturing apparatus 16 according to the second embodiment shown in Figure 3, redundant explanations will be omitted.

[0069] The semiconductor manufacturing apparatus 21 is a radical etching apparatus having a plasma generation unit 22 at the center of the apparatus. The plasma generation method of the plasma generation unit 22 is not specified, but here we assume an inductive coupling method. High-frequency power is supplied from a high-frequency power supply 24 to a coil-shaped antenna 23 wound around the outer circumference of the side wall of the plasma generation unit 22, and plasma 25 is generated.

[0070] A heater 26, such as a halogen lamp unit, is arranged to surround the outer periphery of the plasma generation unit 22 at the center of the device. Inside the housing of the heater 26, a flow path 27 is provided through which a fluid such as water flows as a cooling medium, thereby cooling the housing of the heater 26. The heater 26 is positioned above the processing chamber 2, which is the processing room, and can be described as a lamp that emits electromagnetic waves that are irradiated into the inside of the processing chamber 2.

[0071] A filter 28, for example, made of silicon, is placed on the inner circumference of the heater 26. Here, the filter 28 is assumed to be a cylindrical solid, but its shape and material are not limited as long as it can properly filter or shield the electromagnetic waves radiated from the heater 26. The filter 28 is placed between the lamp (26) and the processing chamber 2, which is the processing room. It can be described as a shield that reduces the amount of wavelengths smaller than a predetermined value. The filter 28 is connected to a drive mechanism 29, and the filter 28 can be moved up and down by the drive mechanism 29. The filter 28 may also be cooled by the fluid flowing through the channel 27 by bringing the filter 28 into thermal contact with the housing of the heater 26. The filter 28 has the function of reducing the amount of electromagnetic waves with wavelengths of 1 μm or less, for example.

[0072] The heater 26 is separated from the processing chamber 2 by a top plate 30. The top plate 30 is made of, for example, quartz and transmits electromagnetic waves radiated from the heater 26. A groove 31 is carved into the top plate 30, and the filter 28 is inserted into the groove 31 when it descends by the drive mechanism (also called a drive device) 29.

[0073] The drive mechanism 29 is electrically coupled to the control device 210 of the semiconductor manufacturing apparatus 21, and the control device is configured to drive the filter 28 up and down by controlling the drive mechanism 29. The control device 210 is also electrically coupled to the heater 26 and is configured to drive the heater 26. The control device 210 is also electrically coupled to the wall heater 9 and is configured to drive the wall heater 9. The control device 210 is also electrically coupled to the gas supply source 11, the mass flow controller 12, the dry pump 14, and the variable valve 15 and is configured to control the gas supply source 11, the mass flow controller 12, the dry pump 14, and the variable valve 15. The configuration of the control device 210 is similarly applied to semiconductor manufacturing apparatuses 1 and 16 to the extent that there is no inconsistency. In semiconductor manufacturing apparatus 16, the control device 210 is also electrically coupled to the drive mechanism 18 and the cooling mechanism 20 and is configured to control the drive mechanism 18 and the cooling mechanism 20.

[0074] Furthermore, the control device 210 drives the drive mechanism 29 of the filter 28, which acts as a shield, during the processing of one wafer, to move the filter 28 to a position different from the position in which the other wafer 3 is placed in the processing chamber 2, which acts as a processing room, so that electromagnetic waves radiated from the heater 26 can be irradiated onto the wafer without passing through the filter 28.

[0075] <Example of cleaning in a semiconductor manufacturing apparatus according to the third embodiment> Next, we will explain the flow of processing (operation method of the semiconductor manufacturing apparatus) in the semiconductor manufacturing apparatus 21 with the above configuration.

[0076] Figure 8 is a flowchart showing an example of the processing flow in the semiconductor manufacturing apparatus 21 according to the third embodiment. Here, as in the first and second embodiments, the semiconductor manufacturing apparatus 21 performs a step in which, after the processing of one wafer is completed, another wafer (3) is placed on the stage 4 inside the processing chamber 2, which serves as the processing room.

[0077] Steps S301 and S302 in the flowchart of the third embodiment shown in Figure 8 are the same processes as steps S201 and S202 in the flowchart of the second embodiment shown in Figure 6.

[0078] In step S303, the drive mechanism 29 is used to lower the filter 28 and insert it into the groove 31 machined in the top plate 30.

[0079] Next, in step S304, the inner wall of the processing chamber 2 is heated using the heater 26 and the wall heater 9.

[0080] Next, in step S305, plasma is generated using an appropriate gas as needed. Since the inner wall of the processing chamber 2 is heated by the heater 26 and the wall heater 9, the reaction between the active species generated by the plasma and the foreign matter is promoted, and an improvement in the efficiency of desorption of foreign matter from the inner wall of the processing chamber 2 can be expected.

[0081] Next, in step S306, the supply of high-frequency power from the high-frequency power supply 24 to the coil-shaped antenna 23 is stopped, and the plasma is turned off.

[0082] Next, in step S307, the heater 26 and the wall heater 9 are stopped, and the wafer 3 is removed from the processing chamber 2, thereby completing the cleaning process.

[0083] Finally, in step S308, the series of processes is completed by increasing the filter 28.

[0084] Details regarding steps S303 and S304 are described below.

[0085] In steps S303 and S304, the control device (not shown) of the semiconductor manufacturing apparatus 21 drives a lamp (26) to irradiate the inside of the processing chamber 2, which serves as a processing room, with electromagnetic waves transmitted through the filter 28 acting as a shield, while another wafer 3 is placed inside the processing chamber 2, which serves as a processing room.

[0086] Figure 9 shows a schematic side view illustrating the configuration of the semiconductor manufacturing apparatus 21 during steps S303 and S304. Electromagnetic waves radiated from the heater 26 and directed toward the center of the wafer 3 are wavelength-discriminated or shielded by a filter 28 inserted into a groove 31 made on the top plate 30. As a result, electromagnetic waves with wavelength components that heat the wafer 3 radiated from the heater 26 only reach the outer periphery of the wafer 3 beyond the arrow indicated by the dotted line 32. Therefore, the part of the wafer 3 inside the dotted line 32 is kept at a low temperature. The center of the wafer 3, kept at a low temperature, functions as a cold trap, making it possible to clean it by adsorbing vaporized foreign matter. [Examples]

[0087] The fourth embodiment of this disclosure will now be described.

[0088] <Example of the configuration of a semiconductor manufacturing apparatus according to the fourth embodiment> Figure 10 schematically shows the configuration and function of heater 33, where heaters 8 and 26 are used in the semiconductor manufacturing apparatus according to the first, second, and third embodiments. Note that Figure 10 shows an example where the substrate resistance of the filter 36 is 10 to 100 Ω and the thickness is 775 μm.

[0089] Let's assume a halogen lamp as the heater 33. The heater 33 has a halogen lamp 34 and a reflector 35 nearby. The number of halogen lamps and reflectors is irrelevant. In other words, the semiconductor manufacturing apparatus 21 is equipped with a reflector 35 that reflects electromagnetic waves from the lamp (26) and directs the electromagnetic waves into the processing chamber 2, which serves as the processing room.

[0090] A filter 36 is positioned below the heater 33 to remove certain wavelength components of electromagnetic waves radiated from the halogen lamp 34. Here, we assume that the filter 36 is made of silicon. The filter 36 can be described as a shield that reduces the amount of wavelengths smaller than a predetermined value.

[0091] Of the electromagnetic waves radiated from the halogen lamp 34, approximately 50% of the components with wavelengths of 1 μm or longer are transmitted through the filter 36, approximately 40% are reflected, and the remainder are absorbed by the filter 36. At this time, the electromagnetic waves reflected by the filter 36 are further reflected by the reflector 35 located above the filter 36, reaching the filter 36 again, resulting in transmission, reflection, and absorption. By repeating this process, up to approximately 83% of the components with wavelengths of 1 μm or longer in the electromagnetic waves radiated from the halogen lamp 34 can be transmitted through the filter 36.

[0092] Conversely, of the electromagnetic waves radiated from the halogen lamp 34, approximately 40% of the components with wavelengths of 1 μm or less are reflected by the filter 36, and the remainder are absorbed by the filter 36, so they do not pass through the filter 36.

[0093] By utilizing the above phenomenon, it is possible to remove the component of electromagnetic waves radiated from the halogen lamp 34 that heats the wafer (wavelength 1 μm or less) while increasing the illuminance of electromagnetic wave components with wavelengths of 1 μm or more, which are necessary for heating the inner wall of the processing chamber 2.

[0094] The configuration of this disclosure is not limited to the embodiments described above, and various modifications are possible without departing from the spirit thereof. [Explanation of symbols]

[0095] 1: Semiconductor manufacturing equipment, 2: Processing chamber, 3: Wafer (another wafer), 4: Stage, 5: Flow channel, 6: Top plate, 7: Electromagnetic wave, 8: Heater, 9: Wall heater, 10: Aperture, 11: Gas supply source, 12: Mass flow controller, 13: Aperture, 14: Dry pump, 15: Variable valve, 16: Semiconductor manufacturing equipment, 17: Filter, 18: Drive mechanism, 19: Electromagnetic wave, 20: Cooling mechanism, 21: Semiconductor manufacturing equipment, 22: Plasma generation unit, 23: Coil-shaped antenna, 24: High-frequency power supply, 25: Plasma, 26: Heater, 27: Flow channel, 28: Filter, 29: Drive mechanism (drive device), 30: Top plate, 31: Groove, 33: Heater, 34: Halogen lamp, 35: Reflector, 36: Filter.

Claims

1. A method for operating a semiconductor manufacturing apparatus that processes wafers placed inside a processing chamber within a vacuum vessel, A step of placing another wafer inside the processing chamber after the processing of one wafer has been completed, The process involves irradiating the inside of the processing chamber with electromagnetic waves having a reduced amount of wavelengths smaller than a predetermined value, while the other wafer is placed inside the processing chamber. Equipped with, A method for operating a semiconductor manufacturing apparatus, wherein in the step of irradiating the inside of the processing chamber with electromagnetic waves, particles from inside the processing chamber are attached to another wafer.

2. A method for operating a semiconductor manufacturing apparatus according to claim 1, The aforementioned electromagnetic wave is a method for operating a semiconductor manufacturing apparatus in which the amount of electromagnetic waves with wavelengths of 1 μm or less is reduced.

3. A method for operating a semiconductor manufacturing apparatus according to claim 1 or 2, A method for operating a semiconductor manufacturing apparatus in which, while the aforementioned other wafer is held on a sample stage located inside the processing chamber, electromagnetic waves are irradiated into the inside of the processing chamber.

4. A method for operating a semiconductor manufacturing apparatus according to claim 3, A method for operating a semiconductor manufacturing apparatus, wherein the sample stage is maintained at a temperature for cooling the other wafer, and the other wafer is held with a gap between it and the upper surface of the sample stage.

5. A processing chamber located inside the vacuum vessel, A sample stage is located inside the processing chamber and has a wafer placed on its upper surface, A lamp positioned above the processing chamber and emitting electromagnetic waves that irradiate the inside of the processing chamber, A semiconductor manufacturing apparatus comprising a shield disposed between the lamp and the processing chamber for reducing the amount of wavelengths smaller than a predetermined value, wherein the apparatus processes the wafer inside the processing chamber, The system includes a control device that drives the lamp to irradiate the inside of the processing chamber with electromagnetic waves through the shield after the processing of one wafer has been completed and another wafer has been placed inside the processing chamber, The control device drives the shield drive during the processing of one wafer to move the shield to a position different from the position in which another wafer is placed in the processing chamber, thereby irradiating one wafer with electromagnetic waves without passing through the shield.

6. A semiconductor manufacturing apparatus according to claim 5, The shield is a semiconductor manufacturing apparatus that has the function of reducing the amount of electromagnetic waves with a wavelength of 1 μm or less.

7. A semiconductor manufacturing apparatus according to claim 5 or 6, One wafer and another wafer are placed on the upper surface of the sample stage. The semiconductor manufacturing apparatus has a sample stage inside which a medium for cooling the sample stage is supplied.

8. In the semiconductor manufacturing apparatus according to claim 5 or 6, A semiconductor manufacturing apparatus comprising a reflector that reflects the electromagnetic waves from the lamp and directs the electromagnetic waves into the processing chamber.

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