Sealing system for reactor systems

Abstract

To provide a reactor system.SOLUTION: A reaction chamber may comprise: a reaction chamber volume enclosed within the reaction chamber; a susceptor configured to support a substrate disposed in the reaction chamber volume; a reaction space above the susceptor and a lower chamber space below the susceptor, within the reaction chamber volume; and / or a sealing system causing the reaction space and the lower chamber space to be at least partially fluidly separated. The sealing system may include a spacer plate surrounding the susceptor and coupled to the susceptor, and / or a spring coupled to the spacer plate and the susceptor and having a spring bias toward a compressed position or an extended position, such that the spring bias facilitates creation of at least a partial seal between the spacer plate and the susceptor, causing at least partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing or reactor systems, and more particularly to reactor systems and components included therein, the components enabling a seal between an upper volume and a lower volume within a reaction chamber.

Background Art

[0002] Reaction chambers can be used in various processes during the formation of electronic devices. For example, a reaction chamber may be used to deposit various material layers on a semiconductor substrate, an etching material, and / or a cleaning surface. The substrate can be disposed on a susceptor within the reaction chamber. Both the substrate and the susceptor may be heated to a desired substrate temperature set point. In an exemplary process, one or more reactant gases may pass over the heated substrate, causing the deposition of a thin film of material on the substrate surface.

[0003] A reaction chamber may include, for example, two spaces or volumes separated by a susceptor. The process may be performed within a reaction space or chamber (e.g., an upper chamber disposed vertically above a lower chamber) of the two chambers. During operation of a reactor system having two chambers separated by a susceptor, contaminants may undesirably move from the reaction space to another chamber (e.g., from the upper chamber to the lower chamber). Thus, a system and method for providing a seal between two volumes within the reaction chamber (e.g., for at least partially fluidly separating the two chambers) may be desirable.

[0004] Any description of problems and solutions related to the related art is included in the present disclosure solely for the purpose of providing the background of the present disclosure, and should not be construed as an admission that any or all of such descriptions were known at the time the present invention was made.

Summary of the Invention

[0005] This summary is provided to introduce a selection of concepts in a simplified form. These concepts will be described in more detail in the following detailed description of exemplary embodiments of the present disclosure. This summary is not intended to identify any major or essential features of the subject matter described in the claims, nor is it intended to be used to limit the scope of the subject matter described in the claims.

[0006] In some embodiments, reactor systems are provided. The reactor systems disclosed herein can facilitate at least partial sealing between two chambers or volumes within the reaction chamber of the reactor system.

[0007] In various embodiments, the reactor system may include a reaction chamber and / or a vacuum source in fluid communication with the reaction chamber (or the lower chamber space within it). The reaction chamber may include a reaction chamber volume enclosed within the reaction chamber, a susceptor configured to support a substrate placed within the reaction chamber volume, the susceptor configured to move parallel up and down along its axis within the reaction chamber, a reaction space above the susceptor in the reaction chamber volume, a lower chamber space below the susceptor in the reaction chamber volume, and / or a sealing system that at least partially fluidly separates the reaction space and the lower chamber space. In various embodiments, the sealing system may include a spacer plate surrounding a susceptor, the susceptor coupled to the spacer plate, and / or a spring coupled to the spacer plate and the susceptor, the spring having a spring bias toward a compressed or extended position such that the spring bias facilitates the creation of at least a partial seal between the spacer plate and the susceptor, and the spring provides at least a partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.

[0008] In various embodiments, the sealing system may further include a flow control ring positioned around the susceptor and between the susceptor and a spacer plate. A spring may be positioned between the flow control ring and the spacer plate such that the spring is coupled to the susceptor via the flow control ring. At least partial sealing between the spacer plate and the susceptor can be facilitated by spring biasing between the flow control ring and the spacer plate. In various embodiments, the spring may be positioned between the upward-facing surface of the flow control ring and the downward-facing surface of the spacer plate. In various embodiments, the spring may be biased toward an extended position such that a downward force from the spring acts on the flow control ring, thereby generating a downward force on the susceptor, creating at least partial fluid separation between the reaction space and the lower chamber space, so as to form at least partial sealing between the flow control ring and the susceptor. In various embodiments, the spring may form at least partial sealing between the spring and the spacer plate and between the spring and the flow control ring. In various embodiments, the spring may be fixedly coupled to at least one of the spacer plate or the flow control ring.

[0009] In various embodiments, the spring may surround the susceptor. The spring may include a cross-sectional shape having at least one curl. In various embodiments, the cross-sectional shape of the spring may include an E-shape having three curls. In various embodiments, the spring may be positioned at a first point around the susceptor, and the reaction chamber further comprises a second spring positioned at a second point around the susceptor such that the force on the susceptor brought about by the spring occurs at multiple points.

[0010] In various embodiments, the reaction chamber may further include a gas distribution device positioned above the susceptor in the reaction space, and a spring allows the distance between the susceptor and the gas distribution device to be adjusted by up to 9 millimeters while still maintaining at least partial fluid separation between the reaction space and the lower chamber space.

[0011] In various embodiments, the spring may include at least one of a metal or a metal alloy (e.g., stainless steel and / or nickel alloy).

[0012] In various embodiments, the method may include the steps of: moving a susceptor in a reaction chamber upward in parallel from a first position to a second position; applying force to a spring coupled between the susceptor and a spacer plate in response to the step of moving the susceptor, such that the spring has a spring bias toward a compressed or extended position; and / or maintaining at least a partial seal between the spacer plate and the susceptor during the step of moving the susceptor in response to the step of applying force to the spring, such that at least partial fluid separation exists between the reaction space above the susceptor and the lower chamber space below the susceptor in the reaction chamber. In various embodiments, the method may further include the step of applying a downward force to the susceptor by spring bias, which facilitates at least partial fluid separation between the reaction space and the lower chamber space. In various embodiments, the force applied to the spring may include a compressive force, and the spring bias may be toward the extended position. In various embodiments, the reaction chamber may further include a flow control ring positioned between the susceptor and the spacer plate, with the spring positioned between the flow control ring and the spacer plate so that the spring is coupled to the susceptor via the flow control ring.

[0013] In various embodiments, the method may further include the step of moving the flow control ring's upward surface toward the downward surface of the spacer plate in response to the movement of the susceptor, wherein the force applied to the spring is a compressive force between the upward surface of the flow control ring and the downward surface of the spacer plate. In various embodiments, the method may further include the step of maintaining at least partial seals between the spring and the spacer plate, and between the spring and the flow control ring, during the movement of the susceptor.

[0014] For the purpose of summarizing the disclosed benefits and advantages achieved beyond the prior art, certain objectives and advantages of the disclosed have been described above. Naturally, it should be understood that not all of these objectives or advantages may necessarily be achieved by any particular embodiment of the disclosed. Therefore, a person skilled in the art will recognize that embodiments disclosed herein may be performed in a manner that achieves or optimizes one or more advantages or groups of advantages taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0015] All of these embodiments are intended to be within the scope of this disclosure. These embodiments and other embodiments will be readily apparent to those skilled in the art from the following “Modes for Carrying Out the Invention” of certain embodiments with reference to the following appended drawings, and this disclosure is not limited to any particular embodiments considered. [Brief explanation of the drawing]

[0016] This specification specifically identifies and concludes in the claims that are to be embodiments of the present disclosure, although the advantages of embodiments of the present disclosure may be more readily apparent from the descriptions of certain embodiments of the present disclosure when read in conjunction with the accompanying drawings. Elements that are numbered similarly throughout the drawings are intended to be the same.

[0017] [Figure 1] Figure 1 is a schematic diagram of an exemplary reactor system according to various embodiments. [Figure 2A] Figure 2A is a schematic diagram of an exemplary reaction chamber in which the susceptor is located at the bottom, according to various embodiments. [Figure 2B] Figure 2B is a schematic diagram of an exemplary reaction chamber in which the susceptor is positioned in an elevated position, according to various embodiments. [Figure 3]Figure 3 is a schematic view of a portion of a reaction chamber according to various embodiments. [Figure 4] Figures 4A and 4B are schematic views of a portion of a reaction chamber according to various embodiments. [Figure 5] Figure 5 is a diagram showing a spring for providing a seal within a reaction chamber according to various embodiments. [Figure 6] Figure 6 is a diagram showing another spring for providing a seal within a reaction chamber according to various embodiments. [Figure 7] Figure 7 is a diagram showing a method for maintaining a seal within a reaction chamber according to various embodiments.

[0018] Of course, the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in understanding the illustrated embodiments of the present disclosure.

Embodiments for Carrying Out the Invention

[0019] Specific embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the present disclosure extends beyond the specifically disclosed embodiments and / or uses of the present disclosure, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific embodiments described herein.

[0020] The examples presented herein are not meant to be actual diagrams of any particular material, device, structure, or device, but are merely representations used to describe embodiments of the present disclosure.

[0021] As used herein, the term "substrate" may refer to any underlying material or material that may be used to form or on which a device, circuit, or film may be formed.

[0022] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor deposition process in which deposition cycles, preferably a plurality of consecutive deposition cycles, are performed within a process chamber. Typically, during each cycle, a precursor chemisorbs onto a deposition surface (e.g., a substrate surface or a previously deposited underlying surface such as material from a previous ALD cycle) to form a monolayer or sub-monolayer that does not readily react with additional precursors (i.e., a self-limiting reaction). Thereafter, if necessary, a reactant (e.g., another precursor or reaction gas) may then be introduced into the process chamber for use in converting the chemisorbed precursor into the desired material on the deposition surface. Typically, this reactant can further react with the precursor. Additionally, a purge step may also be utilized during each cycle to remove excess precursor from the process chamber and / or excess reactant and / or reaction by-products from the process chamber. Further, as used herein, the term "atomic layer deposition" also means including processes indicated by related terms such as "chemical vapor deposition atomic layer deposition", "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas-source MBE, or organometallic MBE, and chemical beam epitaxy when implemented with alternating pulses of precursor compositions, reactive gases, and purge (e.g., inert carrier) gases.

[0023] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce a desired deposition.

[0024] As used herein, the terms “film” and “thin film” may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “film” and “thin film” may include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, partial or complete atomic layers, or clusters of atoms and / or molecules. “Film” and “thin film” may include materials or layers that have pinholes but are still at least partially continuous.

[0025] As used herein, the term “contaminant” may refer to any undesirable material placed in a reaction chamber that may affect the purity of the substrate placed in the reaction chamber. The term “contaminant” may refer to, but is not limited to, undesirable deposits, metallic and nonmetallic particles, impurities, and waste placed in the reactor system or the reaction chamber or any part thereof.

[0026] Reactor systems used in ALD, CVD, and / or similar processes can be used for a variety of applications, including the deposition and etching of materials onto a substrate surface. In various embodiments, referring to Figure 1, the reactor system 50 may comprise a reaction chamber 4, a susceptor 6 for holding a substrate 30 during processing, a fluid distribution system 8 (e.g., a showerhead) for distributing one or more reactants onto the surface of the substrate 30, and one or more reactant sources 10, 12, and / or carrier and / or purge gas sources 14, which are fluid-coupled to the reaction chamber 4 via lines 16-20 and / or valves or controllers 22-26. The system 50 may also comprise a vacuum source 28 fluid-coupled to the reaction chamber 4. A sealing member 29 may separate (e.g., fluidly at least partially separate) portions of the volume within the reaction chamber 4.

[0027] Referring to Figures 2A and 2B, embodiments of the present disclosure may include reactor systems and methods that can be used to process substrates in a reactor 100. In various embodiments, the reactor 100 may comprise a reaction chamber 110 for processing substrates. In various embodiments, the reaction chamber 110 may comprise a reaction space 112 (i.e., an upper chamber) and / or a lower chamber space 114 (i.e., a lower chamber) which can be configured to process one or more substrates. The lower chamber space 114 may be configured for loading and unloading substrates from the reaction chamber and / or for providing a pressure difference between the lower chamber space 114 and the reaction space 112.

[0028] In various embodiments, the substrate 150 and the susceptor 130 may be movable relative to each other. For example, in various embodiments, the lift pin 139 may be configured to allow the substrate 150 to separate from the susceptor 130 and to allow the substrate 150 to be positioned in contact with the susceptor 130 (i.e., supported by the susceptor 130). In various embodiments, the susceptor 130 may be moved up or down, for example by a susceptor elevator 104, so that the susceptor 130 moves relative to the substrate 150. In various embodiments, the lift pin 139 may be moved up or down, for example by a lift pin elevator / platform 202, so that the substrate 150 moves relative to the 130 susceptor. In various embodiments, the susceptor 130 and / or the lift pin 139 may remain stationary while the other moves. In various embodiments, the susceptor 130 and / or the lift pin 139 may be configured to move relative to each other.

[0029] In various embodiments, the susceptor 130 may move from the loading position 103 to the processing position 106, thereby moving the substrate 150 into the reaction space 112. The substrate 150 may then be processed in the reaction chamber.

[0030] In various embodiments, the reaction space 112 and the lower chamber space 114 may be separated by a susceptor 130 located within the reaction chamber 110. In various embodiments, the reaction space 112 and the lower chamber space 114 may be substantially fluidically separated or isolated from each other. For example, the susceptor 130 may fluidly separate the reaction space 112 and the lower chamber space 114 by creating at least a partial seal (i.e., at least restricting fluid flow) between the susceptor 130 and the chamber sidewall 111 of the reaction chamber 110 located in close proximity to the susceptor outer surface 132 of the susceptor 130. That is, the space 108 between the susceptor 130 and the chamber sidewall 111 may be minimized or eliminated so that there is little or no fluid movement between the susceptor 130 and the chamber sidewall 111.

[0031] In various embodiments, to prevent or reduce fluid flow between the susceptor 130 and the chamber sidewall 111, one or more sealing members (e.g., sealing member 129) may be coupled to the susceptor 130 (e.g., from the outer surface 132 of the susceptor) and / or to the chamber sidewall 111 of the reaction chamber 110, and to the other, to form at least a partial seal between the susceptor 130 and the chamber sidewall 111 (i.e., to restrict or prevent fluid flow). The sealing member 129 may be a diaphragm. At least a partial seal of the reaction space 112 from the lower chamber space 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used in the processing of the substrate 150 into and / or into the lower chamber space 114 of the reaction chamber 110. For example, a precursor gas used to treat a substrate in the reaction space may contain corrosive deposit precursors that come into contact with the lower chamber space 114, generating undesirable deposits / contaminants / particles, which are then reintroduced into the reaction space 112, thereby providing a source of contamination to the substrate placed in the reaction space.

[0032] In various embodiments, the reaction chamber may include a sealing system positioned between the susceptor and the chamber sidewall to create a seal between the reaction space and the lower chamber space. For example, the sealing system in the reaction chamber 130 may include a sealing member 129 positioned between the susceptor 130 and the chamber sidewall 111 to create at least a partial seal between the reaction space 112 and the lower chamber space 114.

[0033] In various embodiments, the sealing system within the reaction chamber may include a spacer plate, at least a portion of which may protrude from the chamber sidewall into the reaction chamber volume. In various embodiments, the spacer plate may surround a susceptor within the reaction chamber. The spacer plate may be coupled to the susceptor (for example, in response to the reaction chamber moving or being positioned in a processing position (e.g., an elevated position)). In various embodiments, the spacer plate may be in contact with and / or directly coupled to the susceptor (for example, when the susceptor is in the elevated or processing position). For example, the downward-facing surface of the spacer plate (e.g., surface 374 in Figure 3) may be coupled to and / or in contact with the upward-facing surface of the susceptor (e.g., the upward-facing surface 336 in Figure 3). In various embodiments, the upward-facing surface of the susceptor that can engage with the spacer plate may be a substrate support surface.

[0034] In various embodiments, the sealing system within the reaction chamber may include a spring positioned between the spacer plate and the susceptor. In various embodiments, the spring may be positioned between the downward-facing surface of the spacer plate and the upward-facing surface of the susceptor. For example, the spring may be positioned at least partially between the downward-facing surfaces of the spacer plate and the upward-facing surface of the spacer plate, engaging with the upward-facing surface of the susceptor. In various embodiments, the spring may be positioned between the downward-facing surface of the spacer plate and the upward-facing surface of the susceptor, with at least a portion of the spring positioned inside. In various embodiments, the spring may be positioned between the downward-facing surface of the recess in the spacer plate and the upward-facing surface of the recess in the susceptor.

[0035] In various embodiments, the sealing system may include a flow control ring positioned between the susceptor and the spacer plate. The flow control ring may be positioned around the susceptor and may be configured to control the flow of fluid within the reaction chamber. For example, the sealing member 129 in Figure 1 may be a flow control ring. Thus, the susceptor may be coupled to and / or engaged with the spacer plate via the flow control ring. The reaction space and the lower chamber space may be separated (fluidically and / or physically) by the susceptor, the flow control ring, and / or the spacer plate. For example, as shown in Figure 3, the flow control ring 390 may be positioned between the spacer plate 370 and the susceptor 330. The flow control ring 390 may have an upward-facing surface 394 that engages with (i.e., couples to and / or contacts with) the downward-facing surface 374 of the spacer plate 370. The flow control ring 390 may have a downward-facing surface 392 that engages with (i.e., connects to and / or contacts with) the upward-facing surface 336 of the susceptor 330. In various embodiments, the upward-facing surface of the susceptor with which the flow control ring engages may be a substrate support surface. Similarly, as shown in Figures 4A and 4B, the flow control ring 490 may be positioned between the spacer plate 470 and the susceptor 430. The flow control ring 490 may have an upward-facing surface 494 that engages with (i.e., connects to and / or contacts with) the downward-facing surface 474 of the spacer plate 470. The flow control ring 490 may have a downward-facing surface 492 that engages with (i.e., connects to and / or contacts with) the upward-facing surface 436 of the susceptor 430. In various embodiments, at least a portion of the flow control ring may be positioned above the spacer plate so that the flow control ring cannot be moved parallel to the spacer plate below it.

[0036] In various embodiments, the spring may be positioned between the spacer plate and the flow control ring within the sealing system for the reaction chamber. In various embodiments, the spring may be positioned between the downward surface of the spacer plate and the upward surface of the flow control ring. For example, referring to Figures 4A and 4B, the spring 440 may be positioned at least partially between the downward surfaces 474 of the spacer plate 470, engaging with the upward surface 494 of the flow control ring 490. In various embodiments, referring to Figure 3, the spring may be positioned between the downward surface 374 of the spacer plate 370 and the upward surface 397 of the recess 395 of the flow control ring 390, in which at least a portion of the spring 340 is positioned. In various embodiments, the spring may be positioned between the downward surface of the recess of the spacer plate and the upward surface of the flow control ring, in which at least a portion of the spring is positioned. In various embodiments, the spring may be positioned between the downward surface of the recess of the spacer plate and the upward surface of the recess of the flow control ring.

[0037] In various embodiments, including a spring in the reaction chamber sealing system can make it possible to form a seal that fluidly separates the reaction space from the lower chamber space within the reaction chamber volume over a range of reaction space heights. That is, the susceptor may be in a processing position (or raised position) over a range of distances from the top of the reaction chamber volume (e.g., a fluid distribution system), while still forming a seal with other components of the reaction chamber sealing system (e.g., spacer plates and / or flow control rings).

[0038] During operation, referring to method 700 shown in Figure 7, the susceptor may be translated from a first position (e.g., lower position or loading position) to a second position (e.g., raised position or processing position) (step 702). In the lower position, the susceptor may not be in contact with any other components of the reaction chamber's sealing system (e.g., spacer plates and / or flow control rings). Thus, the lower chamber space and the reaction space within the reaction chamber volume may be in fluid communication. The springs of the sealing system may be in a relaxed position (e.g., for springs biased toward an uncompressed or extended position, such springs may be in an uncompressed or less compressed position). The susceptor may be translated along the x-axis shown in Figures 3 and 4A-4B toward the raised position (e.g., processing position). The processing position of the susceptor may be a position where the susceptor is positioned during processing of the substrate (e.g., at a desired distance from the top of the reaction chamber or the fluid distribution system). During translation, the upward surface of the susceptor may engage and / or couple with the downward surface of the sealing system, such as the downward surface of the spacer plate and / or flow control ring.

[0039] In response to the susceptor engaging with the spacer plate and / or flow control ring, a force may be applied to the spring of the sealing system (step 704), and the spring may be moved against its bias (e.g., compressed). Thus, the spring can exert force on components, and the spring is positioned between them. For example, the spring may exert an upward force on the spacer plate and a downward force on the flow control ring and / or susceptor. A downward force from a spring compressed against the flow control ring (compressed against its bias) can push the flow control ring against the susceptor. Thus, at least a partial seal may be formed between the spacer plate and the susceptor via the flow control ring (step 706) (i.e., at least a partial seal may be directly formed between the flow control ring and the susceptor). Such at least a partial seal may be maintained in response to the susceptor reaching and positioning in the processing location and throughout the entire substrate processing. In various embodiments, at least a partial seal may be maintained between the spring and the component to which the spring is coupled (step 708) (for example, between the spring and the spacer plate, and / or between the spring and the flow control ring, while maintaining at least a partial seal). Thus, in the reaction chamber volume, the lower chamber space may be at least partially fluidly isolated from the lower chamber space.

[0040] Referring to Figure 3, during operation, the susceptor 330 may move parallel along the x-axis from a lower position to an elevated position. The susceptor 330 does not have to be in contact with the flow control ring 390 in the lower position. When the susceptor 330 is in contact with and / or engaged with the flow control ring 390, the spring 340 may be compressed from a relaxed position to a compressed position. The spring 340 may be biased toward an uncompressed or less compressed position. The spacer plate 395, and / or the portion of the spacer plate 395 protruding from the chamber sidewall 311, may be substantially stationary (i.e., the spacer plate 390 and its portion do not move in response to the force of the spring 340). In response to the compression of the spring 340, the spring 340 may exert an upward force on the downward surface 374 of the spacer plate 370 and / or a downward force on the upward surface 397 of the flow control ring 390. In response, the flow control ring 390 may exert a downward force on the upward surface 336 of the susceptor 330. The upward surface 336 may include a susceptor projection 334 that protrudes from the outer surface 332 of the susceptor. In various embodiments, the upward surface of the susceptor that receives a downward force from the spring and / or the flow control ring may include the substrate support surface of the susceptor. The downward force of the flow control ring 390 on the susceptor 330 may form at least a partial seal between the flow control ring 390 and the susceptor 330. Thus, the reaction space 312 and the lower chamber space 314 may be at least partially fluidly separated.

[0041] Referring to Figures 4A and 4B, during operation, the susceptor 430 may move from a lower position to a raised position, and then parallel along the x-axis. The susceptor 430 does not have to be in contact with the flow control ring 490 in the lower position. When the susceptor 430 is in contact with and / or engaged with the flow control ring 490, the spring 440 may be compressed from a relaxed position 440A to a compressed position 440B. The spring 440 may be biased toward an uncompressed or less compressed position. The spacer plate 490, and / or the portion of the spacer plate 490 protruding from the chamber sidewall 411, may be substantially stationary (i.e., the spacer plate 490 and its portion do not move in response to the force of the spring 440). In response to the compression of spring 440, spring 440 may exert an upward force on the downward surface 474 of spacer plate 470 and / or a downward force on the upward surface 494 of flow control ring 490. In response, flow control ring 490 may exert a downward force on the upward surface 436 of susceptor 430. In various embodiments, the upward surface of the susceptor may be included on the substrate support surface of the susceptor. The downward force of flow control ring 490 on susceptor 430 may form at least a partial seal between flow control ring 490 and susceptor 430. Thus, the reaction space 412 and the lower chamber space 414 may be at least partially fluidly separated.

[0042] In various embodiments, the spring may form at least a partial seal between components, to which the spring is coupled. For example, referring to Figure 3, the spring 340 may form at least a partial seal between the spacer plate 370 and the flow control ring 390. Such at least a partial seal may be generated by the biasing of the spring 340 toward an uncompressed or less compressed position, such that an upward force of the spring 340 toward the spacer plate 370 and a downward force of the spring 340 toward the flow control ring 390 forms at least a partial seal between the spring 340 and the spacer plate 370 and / or the flow control ring 390. In another embodiment, referring to Figures 4A and 4B, the spring 440 may form at least a partial seal between the spacer plate 470 and the flow control ring 490. Such at least partial seals may be generated by biasing the spring 440 toward an uncompressed or less compressed position 440A such that the upward force of the spring 440 toward the spacer plate 470 and the downward force of the spring 440 toward the flow control ring 490 form at least a partial seal between the spring 440 and the spacer plate 470 and / or the flow control ring 490.

[0043] In various embodiments, the springs of the sealing system within the reaction chamber may be coupled to components (for example, fixedly coupled via welding, adhesive, or similar means) and the springs may be positioned between those components. For example, a spring of the sealing system within the reaction chamber positioned between a spacer plate and a susceptor may be coupled to the spacer plate and / or the susceptor. In another embodiment, a spring of the sealing system within the reaction chamber positioned between a spacer plate and a flow control ring may be coupled to the spacer plate and / or the flow control ring.

[0044] At least partial sealing between the susceptor and the spacer plate and / or flow control ring within the reaction chamber may be achieved over a range of susceptor positions (i.e., over a range of distances of the susceptor from the top of the reaction chamber or the fluid distribution system). The spring allows engagement between the susceptor and the spacer plate and / or flow control ring at positions lower than the susceptor's uppermost position (i.e., the position of the susceptor where the reaction space between the susceptor and the top of the reaction chamber or the fluid distribution system is shortest). Thus, the downward force on the susceptor by the spring at any position where the susceptor engages with the spacer plate and / or flow control ring results in at least partial sealing between the spacer plate and / or flow control ring and the susceptor over a range of spring compression.

[0045] In various embodiments, the spring may include a shape that surrounds the susceptor within the reaction chamber. For example, the spring 340 in Figure 3 may extend entirely around the susceptor 330. In various embodiments, the spring may be positioned at one or more points around the susceptor so that forces on the susceptor that form a seal within the reaction chamber can be generated at multiple points around the susceptor.

[0046] In various embodiments, the spring may include a cross-sectional shape that includes at least one curl. For example, the spring 340 in Figure 3 may include an E-shaped cross-sectional shape having three curls 344 between the first end 342 and the second end 346. The spring may include any appropriate number of curls depending on the desired height of the spring and the desired flexibility of the components in the reaction chamber. For example, the spring 600 may include more than three curls 644.

[0047] In springless embodiments, the components of the reaction chamber must be manufactured and assembled with such precision that there is little or no room for any change in the shape or position of the parts (e.g., surfaces must be angled in a particular direction). This increases the time and cost of manufacturing, as well as the potential for errors (e.g., components not fitting properly to each other, failure to form a seal between the reaction space and the lower chamber space, causing the inflow of contaminants into the lower chamber space). Furthermore, the height of the reaction space (e.g., the distance from the upper susceptor surface (i.e., the substrate support surface) to the fluid distribution system) may be fixed so that such a distance cannot be adjusted without compromising the fit between the components and the seal provided thereby. On the other hand, the presence of springs in the reaction chamber sealing system allows for less precision in the design, manufacture, and / or positioning of the components so that they engage with each other to form a seal between them and at least partially fluidly separate the reaction space from the lower chamber space. For example, the susceptor may be slightly tilted, and the susceptor may still adequately engage with the spacer plate and / or flow control ring. Furthermore, the height of the reaction space (i.e., the distance between the susceptor and the fluid distribution system) can be adjusted while still maintaining a seal between the reaction space and the lower chamber space. Thus, the height of the reaction space can be adjusted according to the process being performed and the desired space between the substrate and the fluid distribution system.

[0048] In various embodiments, for springs including an E-shape (as shown in Figure 3), the height of the reaction space may have an adjustability of up to approximately 1 millimeter (i.e., the height of the reaction space can vary by up to 1 millimeter depending on the process being performed). In various embodiments, for springs including a coil spring (e.g., spring 440 in Figures 4A and 4B), or for springs with greater deflection potential or spacing, the height of the reaction space may have an adjustability of up to approximately 9 millimeters (e.g., the height of the reaction space may range from 6 to 15 millimeters).

[0049] In various embodiments, the spring in the sealing system within the reaction chamber may include any suitable material, such as metal or a metal alloy (e.g., stainless steel or nickel alloy). Previous sealing members used in the sealing system, such as O-rings containing polymer materials, may seize, deform, or decompose at relatively low temperatures (e.g., above 300°C). Another previous sealing member, the diaphragm, may have more manufacturing defects, deformation at higher temperatures, and other problems resulting in inadequate sealing between the lower and upper chambers within the reaction chamber volume. Springs containing metallic materials may have the advantages of fewer manufacturing defects, less particle generation during processing, greater springback and yield strength (which can be adjusted by adjusting the number of curls or spirals of the spring), minimal deflection required to achieve at least partial sealing between components (allowing the described flexibility and adjustability within the reaction chamber as well as the height of the reaction space), higher temperature performance (e.g., possibly above 800°C), and the ease with which spring rings with different cross-sectional shapes can be fabricated based on the deflection requirements for a particular deposition process.

[0050] In various embodiments, the reactor or reaction chamber may include a purge channel that is in fluid communication with the reaction chamber volume having an outlet adjacent to a spring. For example, referring to Figures 4A and 4B, the reaction chamber may include a purge channel 420 that is fluidly connected to the reaction chamber volume (e.g., to the reaction space 412). The purge channel 420 may be fluidly coupled to a purge gas source 414 (e.g., similar to the purge gas source 14 in Figure 1), which may contain a purge gas (e.g., an inert or less reactive gas such as nitrogen, helium, argon, or similar). The purge channel 420 may be located through the chamber sidewall and / or a spacer plate 470. Thus, the purge channel 420 may have an outlet into the reaction chamber adjacent to the spring 440. Before, after, and / or during the deposition process, a purge gas may flow from a purge gas source 414 through a purge channel 420 into a reaction chamber adjacent to the spring 440 (e.g., between deposition processes or between processes involving the introduction of reactants into the reaction chamber). Such purging (e.g., near the spring 440) may be configured to mitigate the risk of undesirable deposition on the spring 440.

[0051] While exemplary embodiments of the Disclosure are described herein, it should be understood that the Disclosure is not so limited. For example, reactor systems are described in relation to various specific configurations, but the Disclosure is not necessarily limited to these embodiments. Various modifications, variations, and enhancements of the systems and methods described herein can be made without departing from the spirit and scope of the Disclosure.

[0052] The subject matter of this disclosure includes all novel and non-obvious combinations and partial combinations thereof of the various systems, components, and configurations disclosed herein, as well as all their equivalents.

Claims

1. A reaction chamber, The reaction chamber volume enclosed within the aforementioned reaction chamber, A susceptor configured to support a substrate placed within the reaction chamber volume, wherein the susceptor is configured to move parallel up and down along an axis within the reaction chamber, The reaction space above the susceptor within the reaction chamber volume, The lower chamber space below the susceptor within the reaction chamber volume, A seal system for at least partially fluidly separating the reaction space and the lower chamber space, wherein the seal system A spacer plate surrounding the susceptor, wherein the susceptor is coupled to the spacer plate, A flow control ring is positioned around the susceptor and between the susceptor and the spacer plate, A reaction chamber comprising a sealing system, the sealing system comprising: a spring having a spring bias toward a compressed or extended position, coupled to the spacer plate and the susceptor, and positioned between the downward surface of the spacer plate and the upward surface of a recess in the flow control ring, such that the spring is coupled to the susceptor via the flow control ring, the spring bias between the flow control ring and the spacer plate facilitates the formation of at least a partial seal between the spacer plate and the susceptor, resulting in at least partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.

2. The reaction chamber according to claim 1, wherein the spring is biased toward the extended position such that a downward force from the spring is applied to the flow control ring, thereby generating a downward force on the susceptor such that at least a partial seal is formed between the flow control ring and the susceptor, and generating the at least partial fluid separation between the reaction space and the lower chamber space.

3. The reaction chamber according to claim 1, wherein the spring forms at least a partial seal between the spring and the spacer plate, and between the spring and the flow control ring.

4. The reaction chamber according to claim 3, wherein the spring is fixedly coupled to at least one of the spacer plate or the flow control ring.

5. The reaction chamber according to claim 1, wherein the spring surrounds the susceptor, and the spring has a cross-sectional shape having at least one curl.

6. The reaction chamber according to claim 5, wherein the cross-sectional shape of the spring includes an E-shape having three curls.

7. The reaction chamber according to claim 1, wherein the spring is positioned at a first point around the susceptor, and the reaction chamber further comprises a second spring positioned at a second point around the susceptor such that the force on the susceptor brought about by the spring occurs at multiple points.

8. The reaction chamber according to claim 1, further comprising a gas distribution device positioned above the susceptor in the reaction space, wherein the spring allows the distance between the susceptor and the gas distribution device to be adjusted by up to 9 millimeters while still maintaining the at least partial fluid separation between the reaction space and the lower chamber space.

9. The reaction chamber according to claim 1, wherein the spring comprises at least one of a metal or a metal alloy.

10. The reaction chamber according to claim 9, wherein the spring comprises at least one of stainless steel or a nickel alloy.

11. A reactor system comprising a reaction chamber according to any one of claims 1 to 10.

12. The reactor system according to claim 11, further comprising a vacuum source that is in fluid communication with the lower chamber space.

13. A step of moving the susceptor in the reaction chamber upward in parallel from the first position to the second position, A step of applying force to a spring coupled between the susceptor and a spacer plate in response to the movement step of the susceptor, wherein the spring has a spring bias toward a compressed position or an extended position, A step of maintaining at least a partial seal between the spacer plate and the susceptor during the movement step of the susceptor in response to the step of applying the force to the spring, such that at least partial fluid separation exists between the reaction space above the susceptor and the lower chamber space below the susceptor within the reaction chamber, The step includes facilitating the at least partial fluid separation between the reaction space and the lower chamber space by applying a downward force to the susceptor through the spring biasing, The reaction chamber comprises a flow control ring positioned between the susceptor and the spacer plate, wherein the spring is positioned between the downward-facing surface of the spacer plate and the upward-facing surface of a recess in the flow control ring, in which at least a portion of the spring is positioned, such that the spring is coupled to the susceptor via the flow control ring.

14. The method according to claim 13, wherein the force applied to the spring includes a compressive force, and the spring biasing is directed toward the extended position.

15. The method according to claim 13, further comprising the step of moving the flow control ring's upward surface toward the downward surface of the spacer plate in response to the step of moving the susceptor, wherein the force applied to the spring is a compressive force between the upward surface of the flow control ring and the downward surface of the spacer plate.

16. The method according to claim 15, further comprising the step of maintaining at least a partial seal between the spring and the spacer plate, and between the spring and the flow control ring, during the step of moving the susceptor.

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