Semiconductor equipment

Abstract

This semiconductor device comprises: a first die pad and a second die pad that are located separately from each other in a first direction; a semiconductor element that is mounted on at least one of the first die pad and the second die pad; and a sealing resin. The dimension of the sealing resin in the first direction is greater than that of the sealing resin in a second direction. The first die pad has a first end surface, a second end surface and a first corner end-surface. The first corner end-surface is a flat surface that is covered by the sealing resin and that is inclined relative to the first end surface and to the second end surface. The first corner end-surface has a first angle of inclination relative to the first end surface and a second angle of inclination relative to the second end surface. One of the first angle of inclination or the second angle of inclination is between 60 degrees and 85 degrees inclusive.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Patent Document 1 discloses an example of a semiconductor device including a die pad, a semiconductor element mounted on the die pad, and a sealing resin covering the semiconductor element. The semiconductor element is a switching element such as a MOSFET. The semiconductor device can be used, for example, to form a power conversion circuit.

[0003] The semiconductor device disclosed in Patent Document 1 constitutes either an upper arm circuit or a lower arm circuit in a power conversion circuit. On the other hand, in order to form an upper arm circuit and a lower arm circuit in one semiconductor device, it is necessary to arrange two die pads and individually mount semiconductor elements on them. In this case, more heat is transmitted from each semiconductor element to the sealing resin through the two die pads. As a result, a large heat stress concentration is likely to occur in the sealing resin, and there is a risk that cracks will occur in the sealing resin.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the above circumstances, one problem of the present disclosure is to provide a semiconductor device capable of alleviating heat stress concentration generated in a sealing resin.

Means for Solving the Problems

[0006] A semiconductor device provided by this disclosure comprises a first die pad and a second die pad located apart from each other in a first direction orthogonal to the thickness direction; a semiconductor element mounted on at least one of the first die pad and the second die pad; and a sealing resin covering at least a portion of each of the first die pad and the second die pad, and the semiconductor element. The dimensions of the sealing resin in the first direction are longer than the dimensions of the sealing resin in the thickness direction and in a second direction perpendicular to the first direction, and the first die pad has a first end face facing the first direction, a second end face facing the second direction, and a first corner end face located between the first end face and the second end face and at the corner of the first die pad, the first corner end face being covered with the sealing resin and being a plane inclined with respect to the first end face and the second end face, and the first inclination angle of the first corner end face with respect to the first end face and the second inclination angle of the first corner end face with respect to the second end face being 60° or more and 85° or less. [Effects of the Invention]

[0007] According to the above configuration in this disclosure, it is possible to alleviate thermal stress concentration that occurs in the sealing resin in a semiconductor device.

[0008] Other features and advantages of this disclosure will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] Figure 2 is a plan view of the semiconductor device shown in Figure 1. [Figure 3] Figure 3 is a plan view corresponding to Figure 2, and shows the sealing resin permeating through it. [Figure 4] Figure 4 is a bottom view of the semiconductor device shown in Figure 1. [Figure 5] Figure 5 is a front view of the semiconductor device shown in Figure 1. [Figure 6] FIG. 6 is a right side view of the semiconductor device shown in FIG. 1. [Figure 7] FIG. 7 is a right side view corresponding to FIG. 6 and shows through the encapsulating resin. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII of FIG. 3. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 3. [Figure 10] FIG. 10 is a partially enlarged view of FIG. 8. [Figure 11] FIG. 11 is a partially enlarged view of FIG. 8. [Figure 12] FIG. 12 is a partially enlarged view of FIG. 8. [Figure 13] FIG. 13 is a partially enlarged view of FIG. 9. [Figure 14] FIG. 14 is a partially enlarged view of FIG. 3. [Figure 15] FIG. 15 is a partially enlarged view of FIG. 3. [Figure 16] FIG. 16 is a partially enlarged view of FIG. 3. [Figure 17] FIG. 17 is a partially enlarged view of FIG. 3. [Figure 18] FIG. 18 is a partially enlarged plan view of a modified example of the semiconductor device shown in FIG. 1 and shows through the encapsulating resin. [Figure 19] FIG. 19 is a partially enlarged right side view of the semiconductor device shown in FIG. 18 and shows through the encapsulating resin. [Figure 20] FIG. 20 is a plan view of the semiconductor device according to the second embodiment of the present disclosure and shows through the encapsulating resin. [Figure 21] FIG. 21 is a partially enlarged cross-sectional view taken along line XXI-XXI of FIG. 20. [Figure 22] FIG. 22 is a partially enlarged cross-sectional view taken along line XXII-XXII of FIG. 20.

Embodiments for Carrying Out the Invention

[0010] Embodiments for carrying out the present disclosure will be described based on the accompanying drawings.

[0011] A semiconductor device A10 according to a first embodiment of the present disclosure will be described based on Figures 1 to 17. The semiconductor device A10 comprises a first die pad 10A, a second die pad 10B, a plurality of terminal leads 13, a semiconductor element 21, a first conductive member 31, a second conductive member 32, a pair of gate wires 41, a pair of detection wires 42, and a sealing resin 50. Here, for ease of understanding, Figures 3 and 7 show lines that are transparent to the sealing resin 50 and are indicated by dashed lines. In Figure 3, lines VIII-VIII and IX-IX are indicated by single-dotted lines.

[0012] In describing semiconductor device A10, for convenience, the thickness direction of the first die pad 10A (or second die pad 10B) is referred to as the "thickness direction z". One direction perpendicular to the thickness direction z is referred to as the "first direction x". The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y".

[0013] The semiconductor device A10 converts the DC power supply voltage applied to the first input terminal 14 and the second input terminal 16 of the multiple terminal leads 13 into AC power using a semiconductor element 21. The converted AC power is input to a power supply target such as a motor from the output terminal 15 of the multiple terminal leads 13. The semiconductor device A10 is used in power conversion circuits such as inverters.

[0014] The first die pad 10A and the second die pad 10B are positioned apart from each other in a first direction x, as shown in Figures 3 and 8. The first die pad 10A, together with the second die pad 10B and the multiple terminal leads 13, is made from the same lead frame. This lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of the first die pad 10A, the second die pad 10B, and the multiple terminal leads 13 includes copper (in other words, each component contains copper). The first die pad 10A and the second die pad 10B have a main surface 101 and a back surface 102. The main surface 101 faces in the thickness direction z. The main surface 101 is covered with a sealing resin 50. A semiconductor element 21 is mounted on the main surface 101. Therefore, the back surface 102 faces away from the side on which the semiconductor element 21 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. The back surface 102 is, for example, plated with tin (Sn).

[0015] As shown in Figures 3 and 7-9, the sealing resin 50 covers the semiconductor element 21, the first conductive member 31 and the second conductive member 32, and at least a portion of each of the first die pad 10A and the second die pad 10B. Furthermore, the sealing resin 50 covers a portion of each of the multiple terminal leads 13. The sealing resin 50 is electrically insulating. The sealing resin 50 is made of a material including, for example, a black epoxy resin. As shown in Figure 2, the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, a plurality of recesses 56, and grooves 57.

[0016] As shown in Figure 8, the top surface 51 faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. As shown in Figures 8 and 9, the bottom surface 52 faces the opposite side from the top surface 51 in the thickness direction z. As shown in Figure 4, the back surface 102 of the first die pad 10A and the back surface 102 of the second die pad 10B are exposed from the bottom surface 52.

[0017] As shown in Figures 2, 4, and 5, the pair of first sides 53 are located apart from each other in a first direction x. The pair of first sides 53 face in the first direction x and extend in a second direction y. The pair of first sides 53 are connected to the top surface 51 and the bottom surface 52.

[0018] As shown in Figures 2, 4, and 6, the second side surface 54 and the third side surface 55 are located apart from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite each other in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the top surface 51 and the bottom surface 52. As shown in Figure 5, multiple terminal leads 13 are exposed from the third side surface 55.

[0019] As shown in Figures 2, 4, and 5, the multiple recesses 56 are recessed from the third side surface 55 in the second direction y, and extend from the top surface 51 to the bottom surface 52 in the thickness direction z. In the first direction x, the multiple recesses 56 are individually located between the first input terminal 14 and the first detection terminal 181, between the first input terminal 14 and the second input terminal 16, between the output terminal 15 and the second input terminal 16, and between the output terminal 15 and the second detection terminal 182.

[0020] As shown in Figures 4, 5, 8, and 9, the groove 57 is recessed in the thickness direction z from the bottom surface 52 and extends along the second direction y (i.e., it is elongated in the second direction y). Both sides of the groove 57 in the second direction y are connected to the second side surface 54 and the third side surface 55, respectively. Viewed in the thickness direction z, the groove 57 separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B.

[0021] As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a first end face 111, a second end face 112, a third end face 113, and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113, and the fourth end face 114 are covered with a sealing resin 50. The first end face 111 faces in a first direction x and extends in a second direction y. The first end face 111 is closest to a pair of first side surfaces 53 of the sealing resin 50. The second end face 112 faces in a second direction y and extends in a first direction x. The second end face 112 is closest to a second side surface 54 of the sealing resin 50. The third end face 113 faces in the opposite direction from the second end face 112 in the second direction y and extends in a first direction x. The third end face 113 is located closest to the third side surface 55 of the sealing resin 50. The fourth end face 114 faces away from the first end face 111 in the first direction x and extends in the second direction y. As shown in Figure 8, a groove 57 is located between the fourth end face 114 of the first die pad 10A and the fourth end face 114 of the second die pad 10B.

[0022] As shown in Figures 4 and 7, the distance P2 between the third end face 113 and the third side surface 55 is longer than the distance P1 between the second end face 112 and the second side surface 54.

[0023] As shown in Figures 3, 4, and 7, the first die pad 10A and the second die pad 10B have a first corner end face 121. The first corner end face 121 is located between the first end face 111 and the second end face 112, and is located at the corner of either the first die pad 10A or the second die pad 10B. The first corner end face 121 is covered with sealing resin 50 and is a plane inclined with respect to the first end face 111 and the second end face 112. As shown in Figure 14, the first corner end face 121 has a first inclination angle α1 with respect to the first end face 111 and a second inclination angle α2 with respect to the second end face 112. Either the first inclination angle α1 or the second inclination angle α2 is between 60° and 85°.

[0024] Furthermore, as shown in Figure 14, the longest normal Nmax of the first corner end face 121 is set. The longest normal Nmax is the maximum value of the normal of the first corner end face 121 from either the first corner end face 121 of the first die pad 10A or the second die pad 10B to the first side surface 53 of the pair of first side surfaces 53 of the sealing resin 50 that is closest to the first corner end face 121. The longest normal Nmax is 1.0 to 1.5 times the length of the intersection line C (see Figure 14) between the virtual plane with the first direction x and the second direction y as in-plane directions and the first corner end face 121.

[0025] As shown in Figures 3, 4, and 7, the first die pad 10A and the second die pad 10B have a second corner end face 122. The first corner end face 121 is located between the first end face 111 and the third end face 113, and is located at the corner of either the first die pad 10A or the second die pad 10B. The second corner end face 122 is covered with sealing resin 50 and is a plane inclined with respect to the first end face 111 and the third end face 113. As shown in Figure 15, the second corner end face 122 has a third inclination angle α3 with respect to the first end face 111 and a fourth inclination angle α4 with respect to the third end face 113. Either the third inclination angle α3 or the fourth inclination angle α4 is between 60° and 85°.

[0026] As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a third corner end face 123. The third corner end face 123 is located between the second end face 112 and the fourth end face 114, and is located at the corner of either the first die pad 10A or the second die pad 10B. The third corner end face 123 is covered with sealing resin 50 and is a plane inclined with respect to the second end face 112 and the fourth end face 114. As shown in Figure 16, the third corner end face 123 has a fifth inclination angle α5 with respect to the fourth end face 114 and a sixth inclination angle α6 with respect to the second end face 112. Either the fifth inclination angle α5 or the sixth inclination angle α6 is between 60° and 85°.

[0027] As shown in Figures 3 and 4, the first die pad 10A and the second die pad 10B have a fourth corner end face 124. The fourth corner end face 124 is located between the third end face 113 and the fourth end face 114, and is located at the corner of either the first die pad 10A or the second die pad 10B. The fourth corner end face 124 is covered with sealing resin 50 and is a plane inclined with respect to the third end face 113 and the fourth end face 114. As shown in Figure 17, the fourth corner end face 124 has a seventh inclination angle α7 with respect to the fourth end face 114 and an eighth inclination angle α8 with respect to the third end face 113. Either the seventh inclination angle α7 or the eighth inclination angle α8 is between 60° and 85°.

[0028] As shown in Figure 12, the second die pad 10B has a first seating surface 103 and a first upright surface 104. The first seating surface 103 faces the same side as the main surface 101 in the thickness direction z and is located between the main surface 101 and the back surface 102 in the thickness direction z. The first seating surface 103 is connected to the fourth end surface 114. The first upright surface 104 faces in a direction perpendicular to the thickness direction z and is connected to the first seating surface 103 and the main surface 101. The first seating surface 103 and the first upright surface 104 form a step in the second die pad 10B.

[0029] As shown in Figures 3 and 8, the semiconductor element 21 is mounted on at least one of the first die pad 10A and the second die pad 10B. In semiconductor device A10, the semiconductor element 21 includes the first element 21A and the second element 21B. The first element 21A is mounted on the main surface 101 of the first die pad 10A. The second element 21B is mounted on the main surface 101 of the second die pad 10B. The semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 21 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of semiconductor device A10, the semiconductor element 21 is an n-channel type MOSFET with a vertical structure. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). As shown in Figures 10 and 11, the semiconductor element 21 has a first electrode 211, a second electrode 212, and a gate electrode 213.

[0030] As shown in Figures 10 and 11, the first electrode 211 is located on the opposite side of the second electrode 212 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the source electrode of the semiconductor element 21. The first electrode 211 includes a plurality of metal plating layers. The first electrode 211 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the first electrode 211 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0031] As shown in Figures 10 and 11, the second electrode 212 is provided facing either the main surface 101 of the first die pad 10A or the main surface 101 of the second die pad 10B. A current corresponding to the power before it is converted by the semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain electrode of the semiconductor element 21.

[0032] As shown in Figures 10 and 11, the gate electrode 213 is located on the same side as the first electrode 211 in the thickness direction z. A gate voltage is applied to the gate electrode 213 to drive the semiconductor element 21. In the thickness direction z, the area of ​​the gate electrode 213 is smaller than the area of ​​the first electrode 211.

[0033] As shown in Figures 8, 10, and 11, the die bonding layer 23 is interposed between the main surfaces 101 of the first die pad 10A and the second die pad 10B and the second electrodes 212 of the semiconductor element 21 (first element 21A and second element 21B). The die bonding layer 23 is conductive. The die bonding layer 23 is, for example, solder. Alternatively, the die bonding layer 23 may be sintered metal. The die bonding layer 23 bonds the main surface 101 of the first die pad 10A to the second electrode 212 of the first element 21A. As a result, the second electrode 212 of the first element 21A is electrically connected to the first die pad 10A. Furthermore, the die bonding layer 23 bonds the main surface 101 of the second die pad 10B to the second electrode 212 of the second element 21B. As a result, the second electrode 212 of the second element 21B is electrically connected to the second die pad 10B.

[0034] As shown in Figure 3, the multiple terminal leads 13 are located in the second direction y on the opposite side from the side in which the second end face 112 faces the first die pad 10A and the second die pad 10B. At least one of the multiple terminal leads 13 is conductive to the semiconductor element 21. The multiple terminal leads 13 are arranged along the first direction x. The multiple terminal leads 13 include a first input terminal 14, an output terminal 15, a second input terminal 16, a first gate terminal 171, a second gate terminal 172, a first detection terminal 181, and a second detection terminal 182.

[0035] As shown in Figure 3, the first input terminal 14 includes a portion extending along the second direction y and is connected to the first die pad 10A. Therefore, the first input terminal 14 is conductive to the second electrode 212 of the first element 21A via the first die pad 10A. The first input terminal 14 is the P terminal (positive electrode) to which the DC power supply voltage to be converted is applied. The first input terminal 14 has a covered portion 14A and an exposed portion 14B. As shown in Figure 7, the covered portion 14A is connected to the third end face 113 of the first die pad 10A and is covered by the sealing resin 50. Viewed in the first direction x, the covered portion 14A is bent. As shown in Figures 2 to 5, the exposed portion 14B is connected to the covered portion 14A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0036] As shown in Figure 3, the output terminal 15 includes a portion extending along the second direction y and is connected to the second die pad 10B. Therefore, the output terminal 15 is conductive to the second electrode 212 of the second element 21B via the second die pad 10B. AC power converted by the semiconductor element 21 is output from the output terminal 15. The output terminal 15 has a covered portion 15A and an exposed portion 15B. The covered portion 15A is connected to the third end face 113 of the second die pad 10B and is covered by the sealing resin 50. Viewed in the first direction x, the covered portion 15A is bent in the same way as the covered portion 14A of the first input terminal 14. As shown in Figures 2 to 5, the exposed portion 15B is connected to the covered portion 15A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0037] As shown in Figure 3, the second input terminal 16 is located away from the first die pad 10A and the second die pad 10B in the second direction y, and between the first input terminal 14 and the output terminal 15 in the first direction x. The second input terminal 16 extends along the second direction y. The second input terminal 16 is conductive to the first electrode 211 of the second element 21B. The second input terminal 16 is the N terminal (negative electrode) to which the DC power supply voltage to be converted is applied. The second input terminal 16 has a covered portion 16A and an exposed portion 16B. As shown in Figure 9, the covered portion 16A is covered by the sealing resin 50. As shown in Figures 2 to 5, the exposed portion 16B is connected to the covered portion 16A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends away from the first die pad 10A and the second die pad 10B in the second direction y. The surface of the exposed portion 16B is, for example, tin-plated.

[0038] As shown in Figure 13, the covering portion 16A of the second input terminal 16 has a second seating surface 16C and a second upright surface 16D. The second seating surface 16C faces the same side as the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z, and is located below the upper surface of the covering portion 16A (the surface facing upward in Figure 13). The second upright surface 16D faces in a direction perpendicular to the thickness direction z and is connected to the second seating surface 16C and the upper surface of the covering portion 16A. The second seating surface 16C and the second upright surface 16D form a step in the covering portion 16A of the second input terminal 16.

[0039] As shown in Figure 3, the first gate terminal 171 is located away from the first die pad 10A in the second direction y and on one side of the first direction x. As shown in Figure 3, the second gate terminal 172 is located away from the second die pad 10B in the second direction y and on the other side of the first direction x. The first gate terminal 171 is conductive to the gate electrode 213 of the first element 21A. A gate voltage is applied to the first gate terminal 171 to drive the first element 21A. The second gate terminal 172 is conductive to the gate electrode 213 of the second element 21B. A gate voltage is applied to the second gate terminal 172 to drive the second element 21B.

[0040] As shown in Figure 3, the first gate terminal 171 has a covered portion 171A and an exposed portion 171B. The covered portion 171A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 171B is, for example, tin-plated.

[0041] As shown in Figure 3, the second gate terminal 172 has a covered portion 172A and an exposed portion 172B. The covered portion 172A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 172B is, for example, tin-plated.

[0042] As shown in Figure 3, the first detection terminal 181 is located away from the first die pad 10A in the second direction y, and between the first input terminal 14 and the first gate terminal 171 in the first direction x. As shown in Figure 3, the second detection terminal 182 is located away from the second die pad 10B in the second direction y, and between the output terminal 15 and the second gate terminal 172 in the first direction x. The first detection terminal 181 is conductive to the first electrode 211 of the first element 21A. A voltage corresponding to the current flowing through the first electrode 211 of the first element 21A is applied to the first detection terminal 181. The second detection terminal 182 is conductive to the first electrode 211 of the second element 21B. A voltage corresponding to the current flowing through the first electrode 211 of the second element 21B is applied to the second detection terminal 182.

[0043] As shown in Figure 3, the first detection terminal 181 has a covered portion 181A and an exposed portion 181B. The covered portion 181A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 181B is connected to the covered portion 181A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends away from the first die pad 10A in the second direction y. The surface of the exposed portion 181B is, for example, tin-plated.

[0044] As shown in Figure 3, the second detection terminal 182 has a covered portion 182A and an exposed portion 182B. The covered portion 182A is covered with a sealing resin 50. As shown in Figures 2 to 5, the exposed portion 182B is connected to the covered portion 182A and is exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends away from the second die pad 10B in the second direction y. The surface of the exposed portion 182B is, for example, tin-plated.

[0045] As shown in Figure 5, in semiconductor device A10, the height h of the exposed portion 14B of the first input terminal 14, the exposed portion 15B of the output terminal 15, and the exposed portion 16B of the second input terminal 16 are all the same. Furthermore, the thickness of each of these is also the same. Therefore, when viewed in the first direction x, at least a portion of the second input terminal 16 (exposed portion 16B) overlaps with the first input terminal 14 and the output terminal 15, respectively (see Figure 6).

[0046] As shown in Figure 3, the first conductive member 31 is joined to the first electrode 211 of the first element 21A and to the second die pad 10B. As a result, the first electrode 211 of the first element 21A is electrically connected to the second die pad 10B and the second electrode 212 of the second element 21B. The composition of the first conductive member 31 includes copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. The first conductive member 31 has a main body portion 311, a pair of first joining portions 312, and a second joining portion 313.

[0047] As shown in Figure 3, the main body portion 311 constitutes the main part of the first conductive member 31. The main body portion 311 extends in the first direction x. As shown in Figure 8, the main body portion 311 straddles the space between the first die pad 10A and the second die pad 10B.

[0048] As shown in Figures 3 and 10, the pair of first joints 312 are joined to the first electrode 211 of the first element 21A. As shown in Figures 3 and 7, the pair of first joints 312 are located apart from each other in the second direction y. The pair of first joints 312 are connected to the main body 311.

[0049] As shown in Figures 3 and 12, the second joint 313 is joined to the first seating surface 103 of the second die pad 10B. The second joint 313 extends in the second direction y. At least a portion of the second joint 313 is housed in the area defined by the first seating surface 103 and the first upright surface 104 of the second die pad 10B. The second joint 313 is connected to the main body 311. The second joint 313 is located on the opposite side of the pair of first joints 312, with the main body 311 in between.

[0050] As shown in Figures 8 and 10, the semiconductor device A10 further comprises a first bonding layer 33. The first bonding layer 33 is interposed between the first electrode 211 of the first element 21A and a pair of first bonding portions 312. The first bonding layer 33 bonds the first electrode 211 of the first element 21A to the pair of first bonding portions 312. The first bonding layer 33 is conductive. The first bonding layer 33 is, for example, solder. Alternatively, the first bonding layer 33 may be a sintered metal.

[0051] The thickness t of each of the pair of first joints 312 is 0.1 mm or more, and the maximum thickness T of the first joint layer 33 is also 0.1 mm or more. max It is less than twice that. Maximum thickness T of the first bonding layer 33 max This is greater than the thickness of the first element 21A.

[0052] As shown in Figures 8 and 12, the semiconductor device A10 further comprises a second bonding layer 34. The second bonding layer 34 is interposed between the first seating surface 103 of the second die pad 10B and the second bonding portion 313. The second bonding layer 34 bonds the second die pad 10B and the second bonding portion 313. The second bonding layer 34 is conductive. The second bonding layer 34 is, for example, solder. Alternatively, the second bonding layer 34 may be sintered metal.

[0053] As shown in Figure 3, the second conductive member 32 is joined to the first electrode 211 of the second element 21B and to the covering portion 16A of the second input terminal 16. As a result, the first electrode 211 of the second element 21B is electrically connected to the second input terminal 16. The composition of the second conductive member 32 includes copper. In the semiconductor device A10, the second conductive member 32 is a metal clip. The second conductive member 32 has a main body portion 321, a pair of third connecting portions 322, and a fourth connecting portion 323.

[0054] As shown in Figure 3, the main body portion 321 constitutes the main part of the second conductive member 32. Viewed in the thickness direction z, the main body portion 311 is bent in a hook shape. Viewed in the thickness direction z, the main body portion 311 overlaps the main surface 101 of the second die pad 10B.

[0055] As shown in Figures 3 and 11, the pair of third junctions 322 are joined to the first electrode 211 of the second element 21B. As shown in Figures 3 and 9, the pair of third junctions 322 are located apart from each other in the second direction y. The pair of third junctions 322 are connected to the main body 321.

[0056] As shown in Figures 3 and 13, the fourth joint 323 is joined to the second seating surface 16C of the second input terminal 16. The fourth joint 323 extends in the first direction x. At least a portion of the fourth joint 323 is housed in the area defined by the second seating surface 16C and the second upright surface 16D of the second input terminal 16. The fourth joint 323 is connected to the main body 321. The fourth joint 323 is located on the opposite side of the pair of third joints 322, with the main body 321 in between.

[0057] As shown in Figures 8 and 11, the semiconductor device A10 further comprises a third bonding layer 35. The third bonding layer 35 is interposed between the first electrode 211 of the second element 21B and a pair of third bonding portions 322. The third bonding layer 35 bonds the first electrode 211 of the second element 21B to the pair of third bonding portions 322. The third bonding layer 35 is conductive. The third bonding layer 35 is, for example, solder. Alternatively, the third bonding layer 35 may be sintered metal.

[0058] The thickness t of each of the pair of third joints 322 is 0.1 mm or more, and the maximum thickness T of the third joint layer 35 is also 0.1 mm or more. max It is less than twice that. Maximum thickness T of the third bonding layer 35 max This is greater than the thickness of the second element 21B.

[0059] As shown in Figures 8 and 13, the semiconductor device A10 further comprises a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second seating surface 16C of the second input terminal 16 and the fourth bonding portion 323. The fourth bonding layer 36 bonds the covering portion 16A of the second input terminal 16 to the fourth bonding portion 323. The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is, for example, solder. Alternatively, the fourth bonding layer 36 may be sintered metal.

[0060] As shown in Figure 3, the pair of gate wires 41 are individually connected to the gate electrodes 213 of the first element 21A and the second element 21B, to the covering portion 171A of the first gate terminal 171, and to the covering portion 172A of the second gate terminal 172. As a result, the first gate terminal 171 is electrically connected to the gate electrode 213 of the first element 21A. The second gate terminal 172 is electrically connected to the gate electrode 213 of the second element 21B. The composition of the pair of gate wires 41 includes gold. In addition, the composition of each of the pair of gate wires 41 may include copper or aluminum (Al).

[0061] As shown in Figure 3, the pair of detection wires 42 are individually connected to the first electrodes 211 of the first element 21A and the second element 21B, to the covering portion 181A of the first detection terminal 181, and to the covering portion 182A of the second detection terminal 182. As a result, the first detection terminal 181 is electrically connected to the first electrode 211 of the first element 21A. The second detection terminal 182 is electrically connected to the first electrode 211 of the second element 21B. The composition of the pair of detection wires 42 includes gold. In addition, the composition of each of the pair of detection wires 42 may include copper or aluminum.

[0062] Next, a modified example of semiconductor device A10, semiconductor device A11, will be described based on Figures 18 and 19. Here, for ease of understanding, Figures 18 and 19 show lines that penetrate the sealing resin 50 and are indicated by dashed lines.

[0063] As shown in Figure 18, in the semiconductor device A11, the first die pad 10A has a brow portion 105. The brow portion 105 protrudes from the second end face 112 in a first direction x. The brow portion 105 includes a pair of regions that are spaced apart from each other in the first direction x. Furthermore, the brow portion 105 includes the main surface 101. As shown in Figure 19, the brow portion 105 is located away from the back surface 102 in the thickness direction z. The brow portion 105 is provided to prevent the first die pad 10A from falling off the bottom surface 52 of the sealing resin 50. The brow portion 105 may not only have this configuration, but may also be configured to protrude from at least one of the first end face 111, the third end face 113, and the fourth end face 114 in a direction perpendicular to the thickness direction z. Furthermore, a configuration similar to that of the brow portion 105 may be provided on the second die pad 10B.

[0064] Next, we will explain the effects and benefits of semiconductor device A10.

[0065] The semiconductor device A10 comprises a first die pad 10A and a second die pad 10B located apart from each other in a first direction x, and a sealing resin 50 covering at least a portion of each of the first die pad 10A and the second die pad 10B. The first die pad 10A has a first end face 111, a second end face 112, and a first corner end face 121. The first corner end face 121 is covered by the sealing resin 50 and is a plane inclined with respect to the first end face 111 and the second end face 112. Either the first inclination angle α1 of the first corner end face 121 with respect to the first end face 111 shown in Figure 14, or the second inclination angle α2 of the second corner end face 122 with respect to the second end face 112, is 60° or more and 85° or less. With this configuration, compared to the case where both the first tilt angle α1 and the second tilt angle α2 are 45°, the thermal strain of the sealing resin 50 at the interface with the first corner end face 121 is reduced, thus reducing the thermal stress at that interface. As a result, the thermal stress of the sealing resin 50 near the boundary between the first side surface 53 and the second side surface 54 can be reduced. Therefore, semiconductor device A10 makes it possible to alleviate the concentration of thermal stress that occurs in the sealing resin 50.

[0066] The magnitude of the thermal strain of the sealing resin 50 at the interface with the first corner end face 121 is parameterized by the maximum length of the normal to the first corner end face 121 from the first corner end face 121 to the first side surface 53 of the sealing resin 50 (the longest normal Nmax shown in Figure 14). In Figure 14, if the longest normal Nmax is between 1.0 and 1.5 times the intersection line C between the first corner end face 121 and a virtual plane with the first direction x and the second direction y as in-plane directions, the thermal strain of the sealing resin 50 at the interface with the first corner end face 121 will be relatively small.

[0067] The first die pad 10A further has a third end face 113 and a second corner end face 122. The second corner end face 122 is covered with sealing resin 50 and is a plane inclined with respect to the first end face 111 and the third end face 113. Either the third inclination angle α3 of the second corner end face 122 with respect to the first end face 111, or the fourth inclination angle α4 of the second corner end face 122 with respect to the third end face 113, as shown in Figure 15, is between 60° and 85°. As a result, similar to the effect of the first corner end face 121 described above, the thermal strain of the sealing resin 50 at the interface with the second corner end face 122 is reduced, and thus the thermal stress at the interface is reduced. This reduces the thermal stress of the sealing resin 50 near the boundary between the first side surface 53 and the third side surface 55. Therefore, the concentration of thermal stress generated in the sealing resin 50 can be more effectively mitigated.

[0068] The first die pad 10A further has a third corner end face 123 and a fourth corner end face 124. The third corner end face 123 is covered with sealing resin 50 and is a plane inclined with respect to the second end face 112 and the fourth end face 114. The fourth corner end face 124 is covered with sealing resin 50 and is a plane inclined with respect to the third end face 113 and the fourth end face 114. As a result, similar to the effect of the first corner end face 121 described above, the thermal strain of the sealing resin 50 at the interface with the third corner end face 123 and the fourth corner end face 124 is reduced, thereby reducing the thermal stress at the interface. This makes it possible to reduce the thermal stress of the sealing resin 50 located between the first die pad 10A and the second die pad 10B.

[0069] The distance P2 between the third end face 113 and the third side surface 55 of the sealing resin 50 is longer than the distance P1 between the second end face 112 and the second side surface 54 of the sealing resin 50. This allows a portion of each of the multiple terminal leads 13 to be enclosed within the sealing resin 50 with ample space.

[0070] The sealing resin 50 has a plurality of recesses 56 that are recessed in the second direction y from the third side surface 55. This configuration ensures a longer creepage distance of the sealing resin 50 between any two of the plurality of terminal leads 13 (excluding the first gate terminal 171 and the first detection terminal 181, and the second gate terminal 172 and the second detection terminal 182). This improves the dielectric strength of the semiconductor device A10.

[0071] The sealing resin 50 has a groove 57 that is recessed from the bottom surface 52 and separates the back surface 102 of the first die pad 10A from the back surface 102 of the second die pad 10B when viewed in the thickness direction z. This configuration ensures a longer creepage distance of the sealing resin 50 between the first die pad 10A and the second die pad 10B. This makes it possible to further improve the dielectric strength of the semiconductor device A10. Furthermore, the thermal strain of the sealing resin 50 in the first direction x can be dispersed. This makes it possible to mitigate the concentration of thermal strain on the pair of first side surfaces 53 of the sealing resin 50.

[0072] At least one of the multiple terminal leads 13 is connected to the third end face 113 of the first die pad 10A. This allows the first die pad 10A to be used as a conductive material while keeping the dimensions of the semiconductor device A10 to a minimum.

[0073] The back surfaces 102 of the first die pad 10A and the second die pad 10B are exposed from the sealing resin 50. This improves the heat dissipation of the semiconductor device A10.

[0074] The composition of the first conductive member 31 and the second conductive member 32 includes copper. This reduces the electrical resistance of the first conductive member 31 and the second conductive member 32 compared to wires containing aluminum. This is suitable for carrying a large current through the semiconductor element 21.

[0075] A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on Figures 20 to 22. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, in Figure 20, for ease of understanding, the sealing resin 50 is shown through dashed lines.

[0076] The semiconductor device A20 differs from the aforementioned semiconductor device A10 in that it further includes a protective element 22 and has a configuration of the first conductive member 31 and the second conductive member 32.

[0077] The protection element 22 includes a first diode 22A and a second diode 22B, as shown in Figure 20. The first diode 22A is mounted on the main surface 101 of the first die pad 10A. The second diode 22B is mounted on the main surface 101 of the second die pad 10B. The protection element 22 is, for example, a Schottky barrier diode. The first diode 22A is connected in parallel with the first element 21A. The second diode 22B is connected in parallel with the second element 21B. The protection element 22 is a so-called freewheeling diode that, when a reverse bias is applied to the semiconductor element 21, allows current to flow to the protection element 22 instead of the semiconductor element 21. As shown in Figures 21 and 22, the protection element 22 has an upper electrode 221 and a lower electrode 222.

[0078] As shown in Figures 21 and 22, the upper electrode 221 is provided on the side facing the main surfaces 101 of the first die pad 10A and the second die pad 10B in the thickness direction z. The upper electrode 221 corresponds to the anode electrode.

[0079] As shown in Figures 21 and 22, the lower electrode 222 is located on the opposite side of the upper electrode 221 in the thickness direction z. The lower electrode 222 corresponds to the cathode electrode. As shown in Figure 21, the lower electrode 222 of the first diode 22A is bonded to the main surface 101 of the first die pad 10A via the die bonding layer 23. As a result, the lower electrode 222 of the first diode 22A is conductive to the second electrode 212 of the first element 21A via the first die pad 10A. As shown in Figure 22, the lower electrode 222 of the second diode 22B is bonded to the main surface 101 of the second die pad 10B via the die bonding layer 23. As a result, the lower electrode 222 of the second diode 22B is conductive to the second electrode 212 of the second element 21B via the second die pad 10B.

[0080] As shown in Figures 20 and 21, one of the pair of first joints 312 of the first conductive member 31 is joined to the upper electrode 221 of the first diode 22A via the first bonding layer 33. As a result, the upper electrode 221 of the first diode 22A is electrically connected to the first electrode 211 of the first element 21A via the first conductive member 31.

[0081] As shown in Figures 20 and 22, one of the pair of third joints 322 of the second conductive member 32 is joined to the upper electrode 221 of the second diode 22B via the third joint layer 35. As a result, the upper electrode 221 of the second diode 22B is electrically connected to the first electrode 211 of the second element 21B via the second conductive member 32.

[0082] Next, we will explain the effects and benefits of semiconductor device A20.

[0083] The semiconductor device A20 comprises a first die pad 10A and a second die pad 10B positioned apart from each other in a first direction x, and a sealing resin 50 covering at least a portion of each of the first die pad 10A and the second die pad 10B. The first die pad 10A has a first end face 111, a second end face 112, and a first corner end face 121. The first corner end face 121 is covered by the sealing resin 50 and is a plane inclined with respect to the first end face 111 and the second end face 112. Either the first inclination angle α1 of the first corner end face 121 with respect to the first end face 111, or the second inclination angle α2 of the second corner end face 122 with respect to the second end face 112, as shown in Figure 14, is between 60° and 85°. Therefore, the semiconductor device A20 can also mitigate thermal stress concentration in the sealing resin 50. Furthermore, by having semiconductor device A20 have the same configuration as semiconductor device A10, the semiconductor device A20 also achieves the effects and benefits associated with that configuration.

[0084] The semiconductor device A20 is further equipped with a protection element 22. This allows the semiconductor element 21 to be properly protected from reverse bias even when a large current is passed through the semiconductor device A20.

[0085] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0086] This disclosure includes embodiments described in the following appendix. Note 1. A first die pad and a second die pad are located apart from each other in a first direction perpendicular to the thickness direction, A semiconductor element mounted on at least one of the first die pad and the second die pad, The device comprises at least a portion of the first die pad and the second die pad, the semiconductor element, and a sealing resin covering them. The dimensions of the sealing resin in the first direction are longer than the dimensions of the sealing resin in the thickness direction and in the second direction perpendicular to the first direction. The first die pad has a first end face facing the first direction, a second end face facing the second direction, and a first corner end face located between the first end face and the second end face and at the corner of the first die pad. The first corner end face is covered with the sealing resin and is a plane inclined with respect to the first end face and the second end face. A semiconductor device in which either the first inclination angle of the first corner end face with respect to the first end face, or the second inclination angle of the first corner end face with respect to the second end face, is 60° or more and 85° or less. Note 2. The semiconductor device according to claim 1, wherein the first end face and the second end face are covered with the sealing resin. Note 3. The sealing resin has a first side surface facing the first direction, The first end face is the semiconductor device described in Appendix 2, located closest to the first side surface. Note 4. The semiconductor device according to Appendix 3, wherein the maximum length of the normal to the first corner end face extending from the first corner end face to the first side surface is 1.0 to 1.5 times the length of the intersection line of the first corner end face and a virtual plane whose first and second directions are in-plane directions. Note 5. The first die pad and the second die pad have a back surface that faces away from the side on which the semiconductor element is located in the thickness direction, The semiconductor device according to Appendix 3 or 4, wherein the aforementioned back surface is exposed from the sealing resin. Note 6. The invention further comprises a plurality of terminal leads located in the second direction on the side opposite to the side in which the second end face faces the first die pad and the second die pad, At least one of the plurality of terminal leads is electrically connected to the semiconductor element. The semiconductor device according to Appendix 5, wherein a portion of each of the plurality of terminal leads is covered with the sealing resin. Note 7. The semiconductor device according to Appendix 6, wherein the plurality of terminal leads are arranged along the first direction. Note 8. The first die pad has a third end face facing away from the second end face in the second direction, and a second corner end face located between the first end face and the third end face and at the corner of the first die pad. The third end face and the second corner end face are covered with the sealing resin. The second corner end face is a plane inclined with respect to the first end face and the third end face. The semiconductor device according to Appendix 6 or 7, wherein either the third inclination angle of the second corner end face with respect to the first end face, or the fourth inclination angle of the second corner end face with respect to the third end face, is 60° or more and 85° or less. Note 9. The first die pad has a fourth end face facing away from the first end face in the first direction, and a third corner end face located between the second end face and the fourth end face and at the corner of the first die pad. The fourth end face and the third corner end face are covered with the sealing resin. The semiconductor device according to Appendix 8, wherein the third corner end face is a plane inclined with respect to the second end face and the fourth end face. Note 10. The first die pad has a fourth corner end face located between the third end face and the fourth end face, and located at the corner of the first die pad, The semiconductor device according to Appendix 9, wherein the fourth corner end face is covered with the sealing resin and is a plane inclined with respect to the third and fourth end faces. Note 11. The sealing resin has a second side surface and a third side surface that face opposite each other in the second direction, The second end face is the semiconductor device described in any of appendices 8 to 10, located closest to the second side surface. Note 12. The semiconductor device according to Appendix 11, wherein the distance between the third end face and the third side surface is longer than the distance between the second end face and the second side surface. Note 13. The semiconductor device described in Appendix 12, wherein the plurality of terminal leads are exposed from the third side surface. Note 14. The semiconductor device according to Appendix 13, wherein any of the plurality of terminal leads is connected to the third end face of the first die pad. Note 15. The semiconductor element includes a first element and a second element, The first element is mounted on the first die pad, The second element is a semiconductor device as described in any one of appendices 12 to 14, mounted on the second die pad. Note 16. The first element is electrically connected to the first die pad, The semiconductor device described in Appendix 15, wherein the second element is electrically connected to the second die pad. Note 17. A first conductive member joined to the first element and the second die pad, The invention further comprises a second die pad and a second conductive member joined to one of the plurality of terminal leads, The semiconductor device according to Appendix 16, wherein the first conductive member and the second conductive member are covered with the sealing resin. [Explanation of symbols]

[0087] A10, A20: Semiconductor equipment; 10A: First die pad 10B: Second die pad 101: Main surface 102: Reverse side 103: First seat 104: 1st standing surface 105: Eave part 111: First end surface 112: Second end surface 113: Third end face 114: Fourth end face 121: First corner end face 122: Second corner end face 123: 3rd corner end face 124: 4th corner end face 13: Terminal lead 14: First input terminal 14A: Covered portion 14B: Exposed portion 15: Output terminal 15A: Insulation 15B: Exposed section 16: Second input terminal 16A: Covered portion 16B: Exposed portion 16C: Second seat surface 16D: Second upright surface 171: First gate terminal 171A: Insulation 171B: Exposed part 172: Second gate terminal 172A: Covered portion 172B: Exposed portion 181: First detection terminal 181A: Covering 181B: Exposed part 182: Second detection terminal 182A: Covered portion 182B: Exposed portion 21: Semiconductor element 21A: First element 21B: Second element 211: First electrode 212: Second electrode 213: Gate electrode 22: Related to protection 22A: First diode 22B: Second diode 221: Top electrode 222: Bottom electrode 23: Die bonding layer 31: First conductive member 311: Main body 312: 1st joint 313: 2nd joint 32: Second conductive member 321: Main body 322: 3rd joint 323: 4th joint 33: First bonding layer 34: Second bonding layer 35: Third bonding layer 36: Fourth bonding layer 41: Gate wire 42: Detection wire 50: Sealing resin 51: Top surface 52: Bottom 53: First side 54: 2nd side 55: 3rd side 56: Recess 57: Groove L1, L2: Dimensions α1~α8: 1st tilt angle~8th tilt angle P1, P2: Spacing z: Thickness direction x: 1st direction y: 2nd direction

Claims

1. A first die pad and a second die pad are located apart from each other in a first direction perpendicular to the thickness direction, A semiconductor element mounted on at least one of the first die pad and the second die pad, The device comprises at least a portion of each of the first die pad and the second die pad, the semiconductor element, and a sealing resin covering them. The dimensions of the sealing resin in the first direction are longer than the dimensions of the sealing resin in the thickness direction and in the second direction perpendicular to the first direction. The first die pad has a first end face facing the first direction, a second end face facing the second direction, and a first corner end face located between the first end face and the second end face and at the corner of the first die pad. The first corner end face is covered with the sealing resin and is a plane inclined with respect to the first end face and the second end face. The first inclination angle of the first corner end face relative to the first end face, and the second inclination angle of the first corner end face relative to the second end face, are either 60° or more and 85° or less. The first end face and the second end face are covered with the sealing resin. The sealing resin has a first side surface facing the first direction, The first end face is located closest to the first side surface, A semiconductor device wherein the maximum length of the normal to the first corner end face, extending from the first corner end face to the first side surface, is 1.0 to 1.5 times the length of the intersection line between the first corner end face and a virtual plane whose first and second directions are in-plane directions.

2. The first die pad and the second die pad have a back surface facing the opposite side in the thickness direction from the side on which the semiconductor element is located, The semiconductor device according to claim 1, wherein the back surface is exposed from the sealing resin.

3. Further comprising a plurality of terminal leads located in the second direction on the side opposite to the side in which the second end face faces the first die pad and the second die pad, At least one of the plurality of terminal leads is electrically connected to the semiconductor element. The semiconductor device according to claim 2, wherein a portion of each of the plurality of terminal leads is covered with the sealing resin.

4. The semiconductor device according to claim 3, wherein the plurality of terminal leads are arranged along the first direction.

5. The first die pad has a third end face facing away from the second end face in the second direction, and a second corner end face located between the first end face and the third end face and at the corner of the first die pad, The third end face and the second corner end face are covered with the sealing resin. The second corner end face is a plane inclined with respect to the first end face and the third end face. The semiconductor device according to claim 3 or 4, wherein either the third inclination angle of the second corner end face with respect to the first end face, or the fourth inclination angle of the second corner end face with respect to the third end face, is 60° or more and 85° or less.

6. The first die pad has a fourth end face facing the opposite side of the first end face in the first direction, and a third corner end face located between the second end face and the fourth end face and at the corner of the first die pad, The fourth end face and the third corner end face are covered with the sealing resin. The semiconductor device according to claim 5, wherein the third corner end face is a plane inclined with respect to the second end face and the fourth end face.

7. The first die pad has a fourth corner end face located between the third end face and the fourth end face, and located at the corner of the first die pad, The semiconductor device according to claim 6, wherein the fourth corner end face is covered with the sealing resin and is a plane inclined with respect to the third and fourth end faces.

8. The sealing resin has a second side surface and a third side surface that face opposite each other in the second direction, The semiconductor device according to any one of claims 5 to 7, wherein the second end face is located closest to the second side surface.

9. The semiconductor device according to claim 8, wherein the distance between the third end face and the third side surface is longer than the distance between the second end face and the second side surface.

10. The semiconductor device according to claim 9, wherein the plurality of terminal leads are exposed from the third side surface.

11. The semiconductor device according to claim 10, wherein any of the plurality of terminal leads is connected to the third end face of the first die pad.

12. The semiconductor element includes a first element and a second element, The first element is mounted on the first die pad, The semiconductor device according to any one of claims 9 to 11, wherein the second element is mounted on the second die pad.

13. The first element is electrically connected to the first die pad, The semiconductor device according to claim 12, wherein the second element is electrically connected to the second die pad.

14. A first conductive member joined to the first element and the second die pad, The invention further comprises a second die pad and a second conductive member joined to one of the plurality of terminal leads, The semiconductor device according to claim 13, wherein the first conductive member and the second conductive member are covered with the sealing resin.

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