Magnetic device embedded integrated structure and method for fabricating the same

Abstract

To provide a magnetic device embedded integrated structure and a method for manufacturing the same.SOLUTION: A magnetic device embedded integrated structure comprises: a first insulation layer; a first circuit layer provided on a first surface of the first insulation layer; an element and a magnetic device each embedded in the first insulation layer, a terminal of the element and an electrode of the magnetic device each being connected to the first circuit layer; and a second circuit layer disposed on a second surface of the first insulation layer and conductively connected to the first circuit layer through a first conducting post penetrating the first insulation layer. At least one terminal of the element and at least one electrode of the magnetic device are conductively connected through the first circuit layer.SELECTED DRAWING: Figure 2

Description

Technical Field

[0003]

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a magnetic device embedded integrated structure and a manufacturing method thereof.

Background Art

[0002] With the development of electronic technology, electronic products are increasingly required to have higher performance and smaller size. As a result, the high-density integration and miniaturization of the package substrates and package structures of electronic products are an inevitable trend. The miniaturization trend of magnetic elements promotes that the miniaturization of electronic components, the embedding into substrates, and the realization of the package substrate integration process technology become the key directions for the future development of this field.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In view of this, an object of the present disclosure is to provide a magnetic device embedded integrated structure and a manufacturing method thereof.

Means for Solving the Problems

[0004] Based on the above object, in a first aspect, the present disclosure provides a first insulating layer, a first circuit layer provided on a first surface of the first insulating layer, elements and magnetic devices respectively embedded in the first insulating layer, and terminals of the elements and electrodes of the magnetic devices are respectively connected to the first circuit layer, a second circuit layer provided on a second surface of the first insulating layer and conductively communicating with the first circuit layer through a first conductive post penetrating the first insulating layer, where at least one terminal of the element and at least one electrode of the magnetic device are conductively communicated through the first circuit layer, and provides a magnetic device embedded integrated structure.

[0005] In a second embodiment, the embodiments of the present disclosure are as follows: (a) providing a mounting plate, Step (b) forming a coil, an electrode on the mounting plate, a first conductive post and a sacrificial metal block on the mounting plate, wherein the coil extends parallel to the mounting plate and the electrode extends perpendicular to the coil, Step (c) is to laminate and press together sheet-shaped magnetic material and insulating material to form a first magnetic layer covering the coil and a second insulating layer covering the first magnetic layer, wherein the coil and electrodes are embedded in the second insulating layer. (d) the step of thinning the second insulating layer to expose the electrode, the first conductive post and the sacrificial metal block, (e) The steps of removing the mounting plate and etching the exposed sacrificial metal block to form a cavity for embedding the element, Step (f) of forming an adhesive layer on the surface of the second insulating layer where the coil is exposed, placing the element in the cavity, and fixing the terminals of the element with the adhesive layer, Step (g) is to laminate and press-bond a sheet-like magnetic material and an insulating material onto the surface of the second insulating layer where the first magnetic layer is exposed, thereby forming a second magnetic layer on the first magnetic layer and a third insulating layer on the second magnetic layer. The step (h) of removing the adhesive layer, The present invention further provides a method for fabricating a magnetic device embedded integrated structure, comprising the steps of (i) forming a first circuit layer on the surface of the second insulating layer and forming a second circuit layer on the surface of the third insulating layer, wherein the first conductive post is used to electrically connect the first circuit layer and the second circuit layer. [Effects of the Invention]

[0006] As can be seen from the above explanation, the technical solutions for the magnetic device embedded integrated structure and its manufacturing method provided in this disclosure realize a package substrate integrated structure in which the magnetic device and elements are synchronously embedded in the same thin insulating layer, enabling the magnetic device and elements to be embedded in the same layer, significantly reducing the thickness of the embedding substrate in which the magnetic device is embedded, simplifying the process flow, improving the production efficiency of the product, reducing production costs, and realizing fine circuit wiring of the magnetic device embedded package substrate. [Brief explanation of the drawing]

[0007] To more clearly illustrate the technical solutions in this disclosure or related art, the following briefly introduces the drawings that may be used in the examples or related art. Clearly, the drawings described below are merely examples of the disclosure, and those skilled in the art can obtain other drawings based on these without creative effort. In the drawings, the thickness of some layers and areas may be exaggerated to facilitate better understanding and explanation. [Figure 1(a)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(b)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(c)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(d)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(e)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(f)] A schematic cross-sectional view of an intermediate structure in each step of a method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure. [Figure 1(g)]Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(h)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(i)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(j)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(k)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(l)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(m)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(n)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(o)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(p)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 1(q)] Cross-sectional schematic diagrams of intermediate structures at each step of a method for fabricating a magnetic device embedded integrated structure according to an embodiment of the present disclosure. [Figure 2] A structural schematic diagram of a magnetic device embedded integrated structure provided in an embodiment of the present disclosure.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, for the purpose of making the objectives, technical solutions, and advantages of the present disclosure clearer, the present disclosure will be described in more detail with reference to the drawings in accordance with specific embodiments.

[0009] Unless otherwise specified, the technical terms or scientific terms used in the embodiments of the present disclosure have the general meanings understood by those skilled in the technical field to which the present disclosure pertains. The "first", "second", and similar words used in the embodiments of the present disclosure do not represent any order, quantity, or importance, but are merely used to distinguish different components. Words such as "include" or "comprise" mean that the elements or articles appearing before such words cover the elements or articles enumerated after such words and their equivalents, and do not exclude other elements or articles. Words such as "connect" or "be connected" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect. "Upper", "lower", "left", "right", etc. are only used to indicate relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationships change accordingly. These terms do not mean that there is no member or more than one member located between two members unless used together with the terms "immediately after" or "directly".

[0010] Currently, in order to meet the development trend of product miniaturization, magnetic devices in packages are mainly divided into two types. One is the common and well-known surface mounting process, where the magnetic device is large and the volume after packaging is large. The other is embedded inside the package substrate, which can reduce the volume after packaging. This requires first manufacturing a magnetic component in which a magnetic body and a metal coil are integrated, dividing it into single devices, and then attaching the devices into the cavities reserved in advance on the substrate or package substrate by means of a fan-out package in a chip-mounting manner to realize the development trend of product microization.

[0011] However, fabricating a device in which magnetic material and metal coils are integrated, slitting it, and mounting it onto a package substrate to realize a magnetic device embedded substrate structure involves a long and complex fabrication process, high production costs, and the fact that a single magnetic device is mounted within the cavity of the package substrate, and that the packaging, fan-out wiring, and the existence of deviations in the connection between the device pins and the package substrate circuit make it impossible to achieve fine circuit wiring on the package substrate.

[0012] In view of this, the first embodiment of the embodiments of the present disclosure provides a method for fabricating a magnetic device embedded integrated structure. Figures 1(a) to 1(q) show schematic cross-sectional views of intermediate structures at each step of the method for fabricating a magnetic device embedded integrated structure according to one embodiment of the present disclosure.

[0013] The above manufacturing method includes the following steps (a) to (i). As shown in Figure 1(a), in step (a), a mounting plate 100 is provided. The mounting plate 100 includes a first seed layer 101, a first metal layer 102, and a second metal layer 103. Optionally, the material of the first seed layer 101 is titanium, and the materials of the first metal layer 102 and the second metal layer 103 are copper.

[0014] Optionally, the first metal layer 102 and the second metal layer 103 are physically bonded, which helps in realizing substrate splitting process technology.

[0015] In this context, the first seed layer 101 may be omitted and formed by deposition if necessary (for example, before step b), and this disclosure is not limited thereto.

[0016] Next, as shown in Figures 1(b) to 1(f), in step (b), the coil 201, electrode 202, first conductive post 203, and sacrificial metal block 204 are formed on the mounting plate 100.

[0017] Step (b) will be explained illustratively below in accordance with Figures 1(b) to 1(f). Specifically, step (b) includes the following steps (b1) to (b5). First, as shown in Figure 1(b), in (b1), a first photoresist layer containing a first pattern is formed on the first seed layer 101. Here, the first photoresist layer can be formed by coating or pressing a photoresist material, followed by exposure and development. Next, as shown in Figure 1(c), in (b2), the first pattern is plated and filled to form the coil 201 and some electrodes, some first conductive posts and some sacrificial metal blocks. Subsequently, as shown in Figure 1(d), in (b3), a second photoresist layer containing a second pattern is formed on the first photoresist layer. Here, the method of forming the second photoresist layer is similar to that of the first photoresist layer and will not be described in detail here. Next, as shown in Figure 1(e), in (b4), the second pattern is plated and filled to form the electrode 202, the first conductive post 203, and the sacrificial metal block 204. Finally, as shown in Figure 1(f), in (b5), the first and second photoresists are removed to expose the coil 201, the electrode 202, the first conductive post 203, and the sacrificial metal block 204.

[0018] The only difference between the first and second patterns is that the first pattern includes a coil pattern. The thickness of the coil 201 is lower than the height of the electrode 202, the first conductive post 203, and the sacrificial metal block 204. Therefore, by forming the corresponding structure using a method of plating the first and second photoresist layers in two stages, it is possible to simultaneously manufacture the magnetic device and form the cavity for embedding the element, which helps to shorten the process flow, improve product production efficiency, and reduce production costs.

[0019] Furthermore, the coil 201 extends perpendicular to the height of the mounting plate 100, meaning the coil 201 extends along the planar direction of the mounting plate. This configuration is useful for forming a magnetic device with a flattened structure, effectively reducing the height of the package structure and decreasing the package volume. In addition, the coil 201 is formed in a single step, avoiding the need for multiple hierarchical formations, eliminating the need for alignment and resulting in higher precision.

[0020] Here, the number of turns, width, and height of coil 201 can all be adjusted and designed according to the actual design requirements, and are not limited here.

[0021] The electrodes 202 generally extend perpendicularly from the surface of the coil 201, or are electrically connected to the coil 201 and extend perpendicularly from the surface of the mounting base 100. Generally, the coil 201 has two electrodes 202, but the coil 201 may have two or more electrodes 202, in which case the coil length of the magnetic device can be adjusted to match the electrodes, thereby adjusting the inductance.

[0022] Generally, the electrode 202, the first conductive post 203, and the sacrificial metal block 204 have the same height.

[0023] Next, as shown in Figures 1(g) to 1(h), in step (c), a sheet-shaped magnetic material and an insulating material are laminated and pressed together to form a first magnetic layer 205a and a second insulating layer 206a. Here, the coil 201 and some of the electrodes 202 are embedded in the first magnetic layer 205a, and the electrodes 202 pass through the first magnetic layer 205a and enter the second insulating layer 206a. Here, first, a sheet-shaped magnetic material is fixed in a position to cover the coil 201 and electrodes 202, then the insulating material is laminated, and finally, the first magnetic layer 205a and the second insulating layer 206a are pressed together.

[0024] Optionally, the material of the second insulating layer 206a is a resin material containing glass fibers, such as PP. Using a resin material containing glass fibers helps to reinforce the rigidity of the product.

[0025] Next, as shown in Figure 1(i), in step (d), the second insulating layer 206a is thinned to expose the electrode 202, the first conductive post 203, and the sacrificial metal block 204. Optionally, the thinning process may be mechanical polishing, chemical mechanical polishing, or plasma thinning.

[0026] Next, as shown in Figure 1(j), in step (e), the mounting plate 100 is removed, exposing the coil 201, electrode 202, first conductive post 203, sacrificial metal block 204, first magnetic layer 205a, and second insulating layer 206a.

[0027] In some embodiments, the step of removing the mounting plate 100 specifically includes steps (e1) to (e3).

[0028] In (e1), a third photoresist layer 207 is formed on the second insulating layer, where the third photoresist layer protects the electrode 202 and the first conductive post 203, preventing them from being destroyed during the etching process of the subsequent metal layer.

[0029] Optionally, the third photoresist 207 can be exposed and developed to expose the sacrificial metal block 204 and used directly for subsequent removal of the sacrificial metal block 204.

[0030] In (e2), the first metal layer 102 and the second metal layer 103 are separated.

[0031] In (e3), the metal layers attached to the second insulating layer 206a, such as the first metal layer 102 and the first seed layer 101, are etched to expose the coil 201, the electrode 202, the first conductive post 203, the sacrificial metal block 204, the first magnetic layer 205a, and the second insulating layer 206a.

[0032] Optionally, if the third photoresist 207 does not expose the sacrificial metal block 204, the third photoresist must be removed.

[0033] Next, as shown in Figure 1(k), in step (f), a fourth photoresist layer is formed on the second insulating layer 206a with the sacrificial metal block 204 exposed, the sacrificial metal block 204 is etched to form a cavity 204b for embedding the component, and the fourth photoresist layer is removed.

[0034] Furthermore, the third photoresist 207 can be converted to a fourth photoresist by exposing the sacrificial metal block 204 through exposure and development. In this case, it is only necessary to form the fourth photoresist on the other side of the second insulating layer 206a. Otherwise, it is necessary to form the fourth photoresist layer on both sides of the second insulating layer 206a to protect structures such as coils.

[0035] Next, as shown in Figure 1(l), in step (g), an adhesive layer 300 is formed on the surface where the coil 201 of the second insulating layer is exposed, the element 208 is placed in the cavity 204b, and the terminals of the element 208 are bonded and fixed to the adhesive layer 300. Here, the adhesive layer 300 is used to temporarily fix the element 208.

[0036] Here, element 208 may be an active element (e.g., a transistor, IC element, logic circuit element, power amplifier), a passive element (capacitor, inductor, resistor), or a combination thereof. The number of elements 208 is not limited to one.

[0037] Next, as shown in Figures 1(m) to 1(n), in step (h), a sheet-like magnetic material and an insulating material are laminated and pressed onto the surface of the second insulating layer 206a where the first magnetic layer 205a is exposed, forming the second magnetic layer 205b and the third insulating layer 206b, where the second magnetic layer covers the first magnetic layer 205a. Here, the method of forming the second magnetic layer 205b and the third insulating layer 206b is similar to the method of forming the first magnetic layer and the second insulating layer, so redundant explanations are omitted.

[0038] The material of the third insulating layer is a resin material that does not contain glass fibers, and is selected from the group consisting of, for example, liquid crystal polymer, BT (bismaleimide triazine) resin, semi-cured prepreg, ABF (Ajinomoto Build-up) film, epoxy resin, and polyimide resin, but is not limited thereto.

[0039] Here, a micro-inductor embedded substrate integrated structure 200 is formed by crimping. In this structure, the first magnetic layer 205a, the second magnetic layer 205b, the coil 201, and the electrode 202 form a micro-inductor.

[0040] Next, as shown in Figure 1(o), the adhesive layer 300 is removed in step (i).

[0041] Optimizing the process flow for embedded magnetic devices and package substrates, integrating the two fabrication processes, and manufacturing them as a single integrated structure is advantageous in reducing extra process steps, shortening the process flow, improving production capacity, and lowering production costs.

[0042] Next, as shown in Figures 1(p) and 1(q), in step (j), a circuit layer is formed on the exposed surfaces of the second insulating layer 206a and the third insulating layer 206b, where the first conductive post 203 is used to connect the circuit layer.

[0043] In some embodiments, step (j) is: Step (j1) involves creating a hole in the third insulating layer 206b to expose the back surface of the element and the first conductive post 203, wherein laser drilling or mechanical drilling can be used, and is not specifically limited. Step (j2) of forming a second seed layer 303 on the exposed surfaces of the third insulating layer 206b and the second insulating layer 206a, Step (j3) is to form a fifth photoresist layer containing a circuit pattern on the second seed layer 303, Step (j4) involves filling a circuit pattern with plating to form a first circuit layer 301 on a second insulating layer and a second circuit layer 302 on a third insulating layer, Step (j5) to remove the fifth photoresist layer, The process includes (j6) etching the second seed layer 303 to obtain the structure shown in Figure 1(p).

[0044] Optionally, step (j) is: The method further includes forming a fourth insulating layer 304 on both sides of the first circuit layer 301 and the second circuit layer 302, and forming a third circuit layer 305 on the fourth insulating layer. The interlayer conductivity method between the third circuit layer 305 and the first circuit layer 301 and the second circuit layer 302 may include a second conductive post 306, laser hole conductivity, or mechanical hole conductivity, and is not specifically limited.

[0045] Finally, as shown in Figure 1(q), in step (k), a solder resist layer 307 is formed on the third circuit layer 305, and the third circuit layer 305 is exposed through the solder resist opening.

[0046] Such technical solutions, such as magnetic material embedded package substrate integration structures, reduce deviations in electrical connection between embedded magnetic devices and package substrates, improve fine electrical connections between terminals and package substrates, enhance the fine wiring capability of magnetic device integrated package substrate structures, and effectively improve product yield.

[0047] The embodiments of this disclosure further provide a magnetic device embedded integrated structure obtained by the above-described manufacturing method. As shown in Figure 2, the magnetic device embedded integrated structure is Optionally, a first insulating layer 206 including a second insulating layer 206a and a third insulating layer 206b, wherein the materials of the second insulating layer 206a and the third insulating layer 206b are the same or different. A first circuit layer 301 is provided on the first surface of the first insulating layer 206, The element 208 and magnetic device 200 are embedded within the first insulating layer 206, and the terminals of the element 208 and the electrodes 202 of the magnetic device are connected to the first circuit layer 301, respectively. The device includes a second circuit layer 302 provided on the second surface of the first insulating layer 206 and communicating with the first circuit layer 301 via a first conductive post penetrating the first insulating layer 206, wherein at least one terminal of the element 208 and at least one electrode 202 of the magnetic device 200 are electrically in communication via the first circuit layer 301.

[0048] Optionally, the material of the second insulating layer 206a located on the terminal side of element 208 and the magnetic device is a resin material containing glass fibers, and the material of the third insulating layer 206b located on the back side of element 208 and the magnetic device is a resin material that does not contain glass fibers. The materials of the second insulating layer 206a and the third insulating layer 206b can be described in the above description of the manufacturing method, and redundant explanations will be omitted.

[0049] In some embodiments, the magnetic device 200 includes a coil 201, the coil 201 extending in a direction perpendicular to the height of the first insulating layer 206.

[0050] In some embodiments, the magnetic device 200 further includes magnetic layers (e.g., a first magnetic layer and a second magnetic layer), a coil 201 embedded within the magnetic layer, where an electrode 202 extends perpendicularly from the coil 201 and penetrates the magnetic layer to a first circuit layer 301, and the magnetic device 200 includes at least two electrodes 202.

[0051] In some embodiments, the magnetic device embedded integrated structure is A fourth insulating layer 304 is provided on the first circuit layer 301 and the second circuit layer 302, respectively. The system further includes a third circuit layer 305, each provided on the fourth insulating layer 304 and communicating with the first circuit layer and the second circuit layer via a second conductive post 306 that penetrates the fourth insulating layer 304.

[0052] In some embodiments, the magnetic device embedded integrated structure further includes a solder resist layer 307 that exposes a third circuit layer 305 through a solder resist opening.

[0053] The magnetic device embedded integrated structure of the above embodiment has the beneficial effects of the embodiment of the fabrication method described above, and redundant explanations are omitted here.

[0054] The consideration of all embodiments described above is illustrative and is not intended to imply that the scope of this disclosure (including the claims) is limited to these examples. In the spirit of this disclosure, the technical features of the embodiments described above or different embodiments may be combined, the steps may be carried out in any order, and many other variations of the embodiments of this disclosure described above exist but are not described in detail for the sake of simplicity, as should be understood by those skilled in the art.

[0055] The embodiments of the present invention are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this disclosure should be included within the scope of protection of this disclosure. [Explanation of Symbols]

[0056] 100 Mounting plate, mounting base, 101 First seed layer, 102 First metal layer, 103 Second metal layer, 200 Embedded substrate integrated structure, magnetic device, 201 Coil, 202 Electrode, 203 First conductive post, 204 Sacrificial metal block, 204b Cavity, 205a First magnetic layer, 205b Second magnetic layer, 206 First insulating layer, 206a Second insulating layer, 206b Third insulating layer, 207 Third photoresist, third photoresist layer, 208 Element, 300 Adhesive layer, 301 First circuit layer, 302 Second circuit layer, 303 Second seed layer, 304 Fourth insulating layer, 305 Third circuit layer, 306 Second conductive post, 307 Solder resist layer

Claims

1. The first insulating layer, A first circuit layer provided on the first surface of the first insulating layer, Each element and magnetic device is embedded within the first insulating layer, and the terminals of the element and the electrodes of the magnetic device are connected to the first circuit layer, The present invention includes a second circuit layer provided on the second surface of the first insulating layer and electrically communicating with the first circuit layer via a first conductive post penetrating the first insulating layer, Here, at least one terminal of the element and at least one electrode of the magnetic device are electrically in communication via the first circuit layer. The magnetic device includes a coil, wherein the coil extends in a direction perpendicular to the height of the first insulating layer. The magnetic device further includes a magnetic layer, the coil is embedded in the magnetic layer, the electrodes extend perpendicularly from the surface of the coil and penetrate the magnetic layer to the first circuit layer, and the magnetic device includes at least two electrodes. The first insulating layer includes a laminated second insulating layer and a third insulating layer, and the materials of the second insulating layer and the third insulating layer are different. A magnetic device embedded integrated structure characterized in that the material of the second insulating layer located on the terminal side of the element and the magnetic device is a resin material containing glass fibers, and the material of the third insulating layer located on the back side of the element and the magnetic device is a resin material that does not contain glass fibers.

2. A fourth insulating layer provided on the first circuit layer and the second circuit layer, respectively, The magnetic device embedded integrated structure according to claim 1, further comprising: a third circuit layer provided on two surfaces of the fourth insulating layer, each conductively communicating with the first circuit layer and the second circuit layer via a second conductive post penetrating the fourth insulating layer.

3. The magnetic device embedded integrated structure according to claim 2, further comprising a solder resist layer provided on the fourth insulating layer and exposing a portion of the third circuit layer through a solder resist opening.

4. Step (a) of providing a mounting plate, Step (b) forming a coil, an electrode on the mounting plate, a first conductive post and a sacrificial metal block on the mounting plate, wherein the coil extends parallel to the mounting plate and the electrode extends perpendicular to the coil, Step (c) is to laminate and press together sheet-shaped magnetic material and insulating material to form a first magnetic layer covering the coil and a second insulating layer covering the first magnetic layer, wherein the coil and electrodes are embedded in the second insulating layer. Step (d) thinning the second insulating layer to expose the electrode, the first conductive post and the sacrificial metal block, (e) The step of removing the mounting plate and etching the exposed sacrificial metal block to form a cavity for embedding the element, Step (f) of forming an adhesive layer on the surface of the second insulating layer where the coil is exposed, placing the element in the cavity, and fixing the terminals of the element with the adhesive layer, Step (g) of laminating and pressing a sheet-like magnetic material and an insulating material onto the surface of the second insulating layer where the first magnetic layer is exposed, thereby forming a second magnetic layer on the first magnetic layer and a third insulating layer on the second magnetic layer, The step (h) of removing the adhesive layer, A method for manufacturing a magnetic device embedded integrated structure, comprising the steps of: (i) forming a first circuit layer on the surface of the second insulating layer and forming a second circuit layer on the surface of the third insulating layer, wherein the first conductive post is used to electrically connect the first circuit layer and the second circuit layer.

5. The mounting plate further includes a first seed layer, and step (b) specifically, Step (b1) of forming a first photoresist layer including a first pattern on the first seed layer, Step (b2) is to fill the first pattern with plating to form the coil, some electrodes, some first conductive posts and some sacrificial metal blocks, Step (b3) of forming a second photoresist layer including a second pattern on the first photoresist layer, Step (b4) of plating and filling the second pattern to form the electrode, the first conductive post and the sacrificial metal block, The manufacturing method according to claim 4, further comprising the step (b5) of removing the first photoresist layer and the second photoresist layer.

6. The manufacturing method according to claim 4, characterized in that at least two electrodes are connected to the coil.

7. The method for manufacturing according to claim 4, characterized in that the material of the second insulating layer is a resin material containing glass fibers.

8. The mounting plate includes a laminated first metal layer and a second metal layer, and step (e) specifically, Step (e1) of forming a third photoresist layer on the second insulating layer, The first metal layer and the second metal layer are separated (e2), The manufacturing method according to claim 4, comprising the step (e3) of etching a metal layer attached to the second insulating layer to expose the coil, the electrode, the first conductive post, the sacrificial metal block, the first magnetic layer, and the second insulating layer.

9. The manufacturing method according to claim 4, characterized in that the material of the third insulating layer is a resin material that does not contain glass fibers.

10. Step (j1) of laminating and crimping a fourth insulating layer onto the first circuit layer and the second circuit layer, Step (j2) of forming a second conductive post that penetrates the fourth insulating layer, The manufacturing method according to claim 4, further comprising step (j3), which includes the step of forming a third circuit layer on each of the two surfaces of the fourth insulating layer, wherein the third circuit layer is electrically connected to the first circuit layer and the second circuit layer, respectively, via the second conductive post.

11. The manufacturing method according to claim 10, further comprising the step (k) of forming a solder resist layer on the third circuit layer and exposing the third circuit layer through a solder resist opening.

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