Substrate support plate and substrate processing system

Abstract

The present invention provides a substrate support plate that can suppress the enlargement of the processing chamber for processing wafer substrates, and can also suppress the increase in processing load on the members that support the wafer substrates. [Solution] This substrate support plate 300 has a flat plate shape that conforms to the outer circumference shape of the wafer substrate P and includes a main body portion 310 that supports the wafer substrate P when plasma dicing the wafer substrate P. The main body portion 310 has a plurality of holes 320 that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces C obtained by plasma dicing the wafer substrate P.

Description

Technical Field

[0001] This invention relates to a substrate support plate and a substrate processing system.

Background Art

[0002] Conventionally, a substrate processing apparatus for performing a process of plasma dicing a wafer substrate has been known (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a substrate processing apparatus that places a substrate (wafer substrate) in a chamber and processes it with plasma to perform plasma dicing into small pieces. In the substrate processing apparatus of Patent Document 1, the substrate is placed in the chamber in a state where it is attached to a dicing tape (substrate fixing tape) and fixed to a frame surrounding the substrate.

[0004] Also, as in Patent Document 2, a substrate diced into a plurality of small pieces is conveyed to a die bonder, which is a device for taking out the small pieces, in a state where it is fixed to a frame by a substrate fixing tape. Then, the small pieces are pushed up from below by the die bonder and adsorbed from above, and the small pieces are taken out individually.

[0005] That is, when plasma-dicing a substrate (wafer substrate) into small pieces, it is necessary to hold the substrate even after it is divided into small pieces. Therefore, it is necessary to fix the substrate to the frame with a substrate fixing tape.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, in the above-mentioned Patent Documents 1 and 2, when plasma dicing a substrate (wafer substrate), the substrate is fixed to a frame with dicing tape (substrate fixing tape) and placed in a chamber (processing chamber). Therefore, the volume of the processing chamber needs to be increased to accommodate the frame surrounding the substrate. Furthermore, when etching the substrate with plasma, in order to suppress the generation of particles and contamination caused by the plasma acting on the substrate fixing tape and frame, it is necessary to treat the substrate fixing tape and frame to make them plasma resistant (for example, by covering them with the cover (protective member) of Patent Document 1). As a result, the processing burden on the members supporting the wafer substrate increases. Therefore, it is desirable to be able to suppress the enlargement of the processing chamber for processing the wafer substrate and to suppress the increased processing burden on the members supporting the wafer substrate.

[0008] This invention was made to solve the above-mentioned problems, and one objective of this invention is to provide a substrate support plate and a substrate processing system that can suppress the enlargement of the processing chamber for processing wafer substrates and suppress the increase in processing load on the members that support the wafer substrates. [Means for solving the problem]

[0009] To achieve the above objective, the first surface-oriented substrate support plate of the present invention has a flat plate shape that conforms to the outer peripheral shape of the wafer substrate, and includes a main body portion that supports the wafer substrate when the wafer substrate is plasma diced, and the main body portion has a plurality of holes formed that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

[0010] In the substrate support plate according to the first aspect of the present invention, as described above, a main body is provided which has a flat plate shape that conforms to the outer circumference shape of the wafer substrate and supports the wafer substrate when the wafer substrate is plasma diced. This prevents the outer circumference of the member supporting the wafer substrate from becoming excessively large relative to the wafer substrate when the wafer substrate is placed in the processing chamber, thus eliminating the need to enlarge the processing chamber in which the wafer substrate is placed. Furthermore, since the main body of the substrate support plate that supports the wafer substrate is covered by the wafer substrate, exposure of the main body of the substrate support plate to plasma in the processing chamber can be suppressed. This eliminates the need to apply any treatment to the substrate support plate to give it plasma resistance. As a result, it is possible to suppress the enlargement of the processing chamber for processing the wafer substrate and to suppress an increase in the processing load on the member supporting the wafer substrate (substrate support plate). In addition, multiple holes are formed in the main body that penetrate in the thickness direction at positions corresponding to each of the multiple small pieces obtained by plasma dicing the wafer substrate. This allows the wafer substrate to be cooled through the holes when it is processed with plasma. Furthermore, when the plasma-diced pieces are individually adsorbed from the wafer substrate by the die bonder, the pieces can be pushed up by pins through holes formed in the main body. This allows the wafer substrate to be handled while being supported by the substrate support plate from the time of plasma dicing until the diced pieces are removed. This allows for more stable support of the plasma-diced wafer substrate compared to when the plasma-diced wafer substrate is supported by a frame and substrate fixing tape arranged around the wafer substrate.

[0011] In the substrate support plate with the first surface described above, preferably, each of the multiple holes is formed to have a smaller area in plan view than each of the multiple small pieces obtained by plasma dicing the wafer substrate. With this configuration, the multiple small pieces obtained by plasma dicing the wafer substrate can be supported more stably by the portion of the substrate support plate surrounding the holes.

[0012] In the substrate support plate with the first surface described above, preferably, the main body is made of a material that can be attracted by an electrostatic chuck and includes a first surface that supports the wafer substrate via a substrate fixing tape, and a second surface that is positioned on the opposite side of the first surface and is attracted by an electrostatic chuck. With this configuration, the wafer substrate can be attached to the first surface of the main body of the substrate support plate via the substrate fixing tape, and the second surface can be attracted by an electrostatic chuck. As a result, the wafer substrate can be reliably fixed in the processing chamber.

[0013] In the substrate support plate according to the first surface described above, preferably, a notch or a straight section is formed on the outer circumference of the main body portion, along a positioning portion that includes at least one of a notch and an orientation flat provided on the wafer substrate. With this configuration, the wafer substrate can be easily positioned relative to the main body portion of the substrate support plate by aligning the positioning portion of the wafer substrate with the notch or straight section of the main body portion of the substrate support plate. Furthermore, when the wafer substrate is placed on the substrate support plate, exposure of the substrate support plate can be effectively suppressed.

[0014] To achieve the above objective, a substrate processing system according to a second aspect of the present invention comprises a substrate processing apparatus including a substrate support plate for supporting a wafer substrate, a processing chamber in which the wafer substrate is placed, and a substrate holding portion disposed within the processing chamber for holding the wafer substrate supported by the substrate support plate. The substrate support plate has a flat plate shape that conforms to the outer periphery of the wafer substrate and includes a main body portion that supports the wafer substrate when plasma dicing the wafer substrate. The main body portion has a plurality of holes formed that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

[0015] In the substrate processing apparatus according to the second aspect of the present invention, as described above, the substrate support plate is provided with a main body having a flat plate shape that conforms to the outer circumference shape of the wafer substrate and supports the wafer substrate when plasma dicing the wafer substrate. This prevents the outer circumference of the member supporting the wafer substrate from becoming excessively large relative to the wafer substrate when the wafer substrate is placed in the processing chamber, thus eliminating the need to enlarge the processing chamber in which the wafer substrate is placed. Furthermore, since the main body of the substrate support plate that supports the wafer substrate is covered by the wafer substrate, exposure of the main body of the substrate support plate to plasma in the processing chamber can be suppressed. This eliminates the need to apply any treatment to the substrate support plate to give it plasma resistance. As a result, it is possible to provide a substrate processing system that can suppress the enlargement of the processing chamber for processing the wafer substrate and suppress an increase in the processing load on the member supporting the wafer substrate (substrate support plate). In addition, multiple holes are formed in the main body of the substrate support plate that penetrate in the thickness direction at positions corresponding to each of the multiple small pieces obtained by plasma dicing the wafer substrate. This allows the wafer substrate to be cooled through the holes when it is processed with plasma. Furthermore, when the plasma-diced pieces are individually adsorbed from the wafer substrate by the die bonder, the pieces can be pushed up by pins through holes formed in the main body. This allows the wafer substrate to be handled while being supported by the substrate support plate from the time of plasma dicing until the diced pieces are removed. This allows for more stable support of the plasma-diced wafer substrate compared to when the plasma-diced wafer substrate is supported by a frame and substrate fixing tape arranged around the wafer substrate. [Effects of the Invention]

[0016] According to the present invention, as described above, it is possible to suppress the enlargement of the processing chamber for processing the wafer substrate, and to suppress the increase in processing load on the members that support the wafer substrate. [Brief explanation of the drawing]

[0017] [Figure 1] It is a schematic diagram showing the schematic configuration of a substrate processing system. [Figure 2] It is a schematic plan view showing a wafer substrate. [Figure 3] It is a schematic plan view showing a substrate support plate. [Figure 4] It is a schematic cross-sectional view showing a wafer substrate and a substrate support plate. [Figure 5] It is a schematic cross-sectional view showing a state in which a wafer substrate and a substrate support plate are held by an electrostatic chuck. [Figure 6] It is a cross-sectional view for explaining the extraction of chips from a plasma-diced wafer substrate. [Figure 7] It is a schematic plan view showing a wafer substrate according to a modified example. [Figure 8] It is a schematic plan view showing a substrate support plate according to a modified example.

Mode for Carrying Out the Invention

[0022] The substrate processing apparatus 200 comprises a processing chamber 10, a substrate mounting section 20, a gas supply device 30, a plasma generation device 40, an exhaust device 50, a high-frequency power supply 60, and a control unit 70. The substrate mounting section 20 is an example of the "substrate holding section" in the claims.

[0023] The processing chamber 10 has a closed space, and the substrate mounting section 20 is housed within this closed space. The processing chamber 10 consists of an upper chamber 11 and a lower chamber 12, which have interconnected internal spaces. A wafer substrate P is placed in the processing chamber 10.

[0024] The substrate mounting section 20 is located within the processing chamber 10. The substrate mounting section 20 holds the wafer substrate P supported by the substrate support plate 300. The substrate mounting section 20 has a mounting surface 20a on which the substrate support plate 300 supporting the wafer substrate P is placed. The substrate mounting section 20 has a disc shape and includes a base 21, an electrostatic chuck 22 installed on the base 21, and a ring member 23 surrounding the electrostatic chuck 22. The substrate mounting section 20 is provided to move up and down within the processing chamber 10 by a lifting cylinder 24. The electrostatic chuck 22 is connected to an electrostatic adsorption power supply (not shown) that applies a voltage for electrostatic adsorption. When a voltage is applied to the electrostatic chuck 22, the substrate support plate 300 supporting the wafer substrate P is attracted to the mounting surface 20a, which is the upper surface of the electrostatic chuck 22, by electrostatic induction. As a result, the wafer substrate P is held in the substrate mounting section 20.

[0025] As shown in Figure 5, the substrate mounting section 20 is provided with a pipe 25 for introducing cooling gas and a pipe 27 through which refrigerant flows. A cooling gas supply unit 26 for introducing cooling gas is connected to pipe 25. A chiller device 28 for circulating refrigerant (for example, liquid refrigerant) is connected to pipe 27. During plasma processing, a predetermined refrigerant is introduced from the chiller device 28 into pipe 27, and the refrigerant is circulated while controlling its temperature (for example, controlling it to 10-30°C). This cools the substrate mounting section 20. Also, during plasma processing, cooling gas is supplied to the back surface of the wafer substrate P to cool the wafer substrate P. Specifically, during plasma processing, cooling gas (an inert gas such as He gas) is supplied from the cooling gas supply unit 26 through pipe 25 between the wafer substrate P (substrate support plate 300) and the mounting surface 20a, cooling the wafer substrate P.

[0026] The gas supply device 30 supplies gas to the processing chamber 10 for processing the wafer substrate P. Specifically, the gas supply device 30 supplies etching gas and protective film forming gas into the processing chamber 10. The gas supply device 30 includes, for example, an SF6 gas supply unit 31 that supplies SF6 gas as the etching gas and a C4F8 gas supply unit 32 that supplies C4F8 gas as the protective film forming gas. Each gas supply unit is connected to the processing chamber 10 from the upper surface of the upper chamber 11 by branched supply pipes 33 for gas supply. SF6 gas and C4F8 gas are supplied into the processing chamber 10 via the supply pipes 33.

[0027] The plasma generator 40 converts the gas in the processing chamber 10 into plasma. Specifically, the plasma generator 40 is a device that generates inductively coupled plasma (ICP) using the gas supplied into the processing chamber 10. The plasma generator 40 includes a helical coil 41 provided on the outer circumference of the upper chamber 11 and a high-frequency power supply 42 that supplies high-frequency power to this coil 41. By supplying high-frequency power to the coil 41 with the high-frequency power supply 42, the gas supplied into the upper chamber 11 is converted into plasma.

[0028] The exhaust system 50 reduces the pressure inside the processing chamber 10. The exhaust system 50 includes a vacuum pump 51 that exhausts the gas inside the processing chamber 10 and an exhaust pipe 52 that connects the vacuum pump 51 to the processing chamber 10. Through the exhaust pipe 52, the vacuum pump 51 exhausts the gas inside the processing chamber 10, bringing the processing chamber 10 to a predetermined pressure state that is close to a vacuum.

[0029] The high-frequency power supply 60 supplies high-frequency power for bias potential to the substrate mounting section 20. The high-frequency power supply 60 supplies high-frequency power to the base 21 of the substrate mounting section 20, thereby providing a bias potential between the substrate mounting section 20 (base 21) and the plasma.

[0030] The control unit 70 controls various parts of the substrate processing apparatus 200. Specifically, it controls the gas supply device 30 and the plasma generation device 40 to control the etching process on the wafer substrate P.

[0031] (Substrate support plate) In this embodiment, the substrate support plate 300 supports the wafer substrate P. Specifically, the substrate support plate 300 supports the wafer substrate P to be processed by the substrate processing apparatus 200. Furthermore, the substrate support plate 300 supports the wafer substrate P when it is transported to a later process after processing by the substrate processing apparatus 200, and during the later process. The wafer substrate P is attached to the substrate support plate 300 at least before the wafer substrate P is plasma diced. The substrate support plate 300 also supports the wafer substrate P until the plasma-diced small pieces C are removed by the die bonder. In addition, the substrate support plate 300 is used in a size and shape corresponding to the type of wafer substrate P.

[0032] As shown in Figures 2 and 3, the substrate support plate 300 has a flat plate shape that conforms to the outer circumference shape of the wafer substrate P. Specifically, in a plan view, the substrate support plate 300 is formed to be approximately the same shape as the wafer substrate P it supports. That is, the substrate support plate 300 has an approximately circular shape, the same shape as the approximately circular wafer substrate P. Furthermore, the substrate support plate 300 has a straight section 330 (see Figure 3) of a similar shape formed at a position corresponding to the orientation flat P1 (see Figure 2) of the wafer substrate P. In addition, in a plan view, the substrate support plate 300 is formed to be approximately the same size as the wafer substrate P it supports. That is, the substrate support plate 300 has an outer diameter D2 (see Figure 3) that is approximately the same size as the outer diameter D1 (see Figure 2) of the wafer substrate P. Note that the outer diameter D2 of the substrate support plate 300 may be 95% to 105% of the outer diameter D1 of the wafer substrate P. Furthermore, the outer diameter D2 of the substrate support plate 300 may be between -5 mm and +5 mm relative to the outer diameter D1 of the wafer substrate P. Note that in Figures 2 to 6, the dimensional ratios of the wafer substrate P and the substrate support plate 300 are depicted differently from the actual dimensional ratios for clarity.

[0033] Furthermore, the substrate support plate 300 has a flat plate shape that conforms to the outer circumference of the wafer substrate P and includes a main body portion 310 that supports the wafer substrate P when plasma dicing the wafer substrate P. In addition, the main body portion 310 has a plurality of holes 320 that penetrate in the thickness direction (Z direction) at positions corresponding to each of the plurality of small pieces C obtained by plasma dicing the wafer substrate P. In other words, the substrate support plate 300 is provided with one hole 320 for each of the plurality of plasma-diced small pieces C.

[0034] Here, as shown in Figure 5, when the wafer substrate P is plasma diced using plasma in the substrate processing apparatus 200, the wafer substrate P is fixed to the substrate mounting section 20 via the substrate support plate 300. Cooling gas is supplied through the piping 25a to the minute gap between the substrate support plate 300 and the electrostatic chuck 22. The supplied cooling gas then enters the hole 320 and cools the wafer substrate P.

[0035] Furthermore, as shown in Figure 6, the small pieces C obtained by plasma dicing the wafer substrate P are taken out one by one by a die bonder and used. Note that the die bonder is a separate device from the plasma dicing device (substrate processing device 200). At this time, the collet 401 of the die bonder attracts the small piece C, and the pin 402 pushes up the small piece C attracted by the collet 401 from below (Z2 direction). At this time, the pin 402 passes through the hole 320 of the substrate support plate 300 that supports the wafer substrate P, and presses the small piece C upward (Z1 direction) together with the substrate fixing tape T.

[0036] Furthermore, as shown in Figures 4 and 5, the substrate support plate 300 supports the wafer substrate P via a stretchable substrate fixing tape T. In other words, the wafer substrate P is attached to the substrate support plate 300 by the substrate fixing tape T. The substrate fixing tape T is formed of, for example, a resin material. As an example, the substrate fixing tape T is formed of a resin material such as polyolefin or polyvinyl chloride. The substrate fixing tape T also includes an adhesive layer for bonding the wafer substrate P and the substrate support plate 300. The adhesive strength of the adhesive layer may decrease due to irradiation with ultraviolet light. The substrate fixing tape T can also be a known dicing tape used in plasma dicing, which is generally called a dicing tape. In addition, to facilitate the transition to the die bonding process after picking up (removing) the diced pieces C from the wafer substrate P, the substrate fixing tape T can also be a dicing die bonding tape in which a die bonding adhesive is laminated between an adhesive layer and a base film.

[0037] The main body 310 is formed of a conductive material that can be attracted by the electrostatic chuck 22. For example, the main body 310 is made of Al (aluminum). Alternatively, the main body 310 may be made of materials such as SiC or AlN. Alternatively, the main body 310 may be made of materials such as silicon or copper. Alternatively, the main body 310 may be made of a composite material.

[0038] The main body 310 includes a first surface 311 that supports the wafer substrate P via a substrate fixing tape T, and a second surface 312 that is positioned on the opposite side of the first surface 311 and is attracted by an electrostatic chuck 22.

[0039] As shown in Figures 2 and 3, each of the multiple holes 320 is formed with a smaller area in plan view than each of the multiple small pieces C obtained by plasma dicing the wafer substrate P. Specifically, each of the multiple holes 320 is formed in a circular shape. Also, the area of ​​each small piece C in plan view is A1, and the area of ​​the hole 320 in plan view is A2. And A1 > A2.

[0040] Furthermore, as shown in Figures 4 and 6, each of the multiple holes 320 has an inner diameter Da that is larger than the outer diameter Db of the die bonder pin 402. In other words, the die bonder pin 402 can pass through the holes 320 in the vertical direction (Z direction). For example, the inner diameter Da of the holes 320 is between 1.5 and 5 times the outer diameter Db of the die bonder pin 402.

[0041] Furthermore, as shown in Figure 3, each of the multiple holes 320 is formed approximately in the center of each of the multiple small pieces C obtained by plasma dicing the wafer substrate P.

[0042] The straight portion 330 is formed along the positioning portion including the orientation flat P1 provided on the wafer substrate P on the outer periphery of the main body portion 310. That is, when the wafer substrate P is attached to the substrate support plate 300, substantially all of the first surface 311 of the substrate support plate 300 is covered by the wafer substrate P.

[0043] As shown in FIG. 4, the substrate support plate 300 has a thickness (length in the Z direction) of the length of B1. Also, the substrate fixing tape T has a thickness (length in the Z direction) of the length of B2. Further, the wafer substrate P has a thickness (length in the Z direction) of the length of B3. For example, the substrate support plate 300 has a thickness smaller than that of the wafer substrate P. That is, B3 > B1. Also, for example, the substrate support plate 300 has a thickness larger than that of the wafer substrate P. That is, B3 < B1. Also, for example, the substrate support plate 300 has the same thickness as the wafer substrate P. That is, B3 = B1. Specifically, the substrate support plate 300 has a thickness of 300 μm or more and 1000 μm or less. Preferably, the substrate support plate 300 has a thickness of 500 μm or more and 700 μm or less.

[0044] (Effects of this embodiment) In this embodiment, the following effects can be obtained.

[0045] In this embodiment, as described above, a main body portion 310 is provided that has a flat plate shape conforming to the outer peripheral shape of the wafer substrate P and supports the wafer substrate P when plasma dicing the wafer substrate P. This prevents the outer peripheral size of the member supporting the wafer substrate P from becoming excessively large relative to the wafer substrate P when the wafer substrate P is placed in the processing chamber 10, thus eliminating the need to enlarge the processing chamber 10 in which the wafer substrate P is placed. Furthermore, since the main body portion 310 of the substrate support plate 300 that supports the wafer substrate P is covered by the wafer substrate P, exposure of the main body portion 310 of the substrate support plate 300 to plasma in the processing chamber 10 can be suppressed. This eliminates the need to apply any plasma-resistant treatment to the substrate support plate 300. As a result, it is possible to suppress the enlargement of the processing chamber 10 for processing the wafer substrate P, and to suppress an increase in the processing load on the member supporting the wafer substrate P (substrate support plate 300). In addition, a plurality of holes 320 are formed in the main body portion 310 that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces C obtained by plasma dicing the wafer substrate P. This allows the wafer substrate P to be cooled through the holes 320 when it is processed with plasma. Furthermore, when the plasma-diced small pieces C are individually adsorbed from the wafer substrate P by the die bonder, the small pieces C can be pushed up by the pins 402 through the holes 320 formed in the main body 310. This allows the wafer substrate P to be handled while supported by the substrate support plate 300 from the time of plasma dicing until the diced small pieces C are removed. This provides more stable support for the plasma-diced wafer substrate P compared to supporting it with a frame and substrate fixing tape arranged around it.

[0046] Furthermore, in this embodiment, as described above, each of the multiple holes 320 is formed with a smaller area in plan view than each of the multiple small pieces C obtained by plasma dicing the wafer substrate P. This allows the multiple small pieces C obtained by plasma dicing the wafer substrate P to be supported more stably in the area surrounding the holes 320 of the substrate support plate 300.

[0047] Furthermore, in this embodiment, as described above, the main body 310 is formed of a material that can be attracted by the electrostatic chuck 22 and includes a first surface 311 that supports the wafer substrate P via the substrate fixing tape T, and a second surface 312 that is positioned on the surface opposite to the first surface 311 and is attracted by the electrostatic chuck 22. As a result, the wafer substrate P can be attached to the first surface 311 of the main body 310 of the substrate support plate 300 via the substrate fixing tape T, and the second surface 312 can be attracted by the electrostatic chuck 22. As a result, the wafer substrate P can be reliably fixed in the processing chamber 10.

[0048] Furthermore, in this embodiment, as described above, a straight section 330 is formed on the outer circumference of the main body 310, along the positioning portion including the orientation flat P1 provided on the wafer substrate P. This allows the wafer substrate P to be easily positioned relative to the main body 310 of the substrate support plate 300 by aligning the orientation flat P1 of the wafer substrate P with the straight section 330 of the main body 310 of the substrate support plate 300. In addition, when the wafer substrate P is placed on the substrate support plate 300, exposure of the substrate support plate 300 can be effectively suppressed.

[0049] (modified version) It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than by the description of the embodiments above, and further includes all modifications (exceptions) within the meaning and scope equivalent to the claims.

[0050] For example, the above embodiment shows an example configuration in which an orientation flat is provided on the wafer substrate as a positioning portion and a straight portion along the orientation flat is formed on the substrate support plate, but the present invention is not limited to this. In the present invention, a positioning portion other than the orientation flat may be formed on the wafer substrate, and the substrate support plate may be formed in a shape along the positioning portion. For example, as shown in Figure 7, a notch P2 may be provided on the wafer substrate Pa as a positioning portion, and as shown in Figure 8, a notch 330a along the notch P2 may be formed on the substrate support plate 300a.

[0051] Furthermore, although the above embodiment shows an example where the wafer substrate is a silicon wafer, the present invention is not limited thereto. In the present invention, the wafer substrate may be a semiconductor wafer other than silicon. For example, the wafer substrate may be a SiGe substrate containing SiGe, or a SiC substrate containing SiC.

[0052] Furthermore, while the above embodiments show SF6 gas and C4F8 gas as examples of processing gases used in the substrate processing apparatus, the present invention is not limited to these. In the present invention, gases other than SF6 gas and C4F8 gas may be used as the processing gas for the substrate processing apparatus. For example, gases such as CF4 gas and CHF3 gas may be used.

[0053] Furthermore, while the above embodiment shows an example in which the substrate support plate is provided with one hole for each of the multiple small pieces, the present invention is not limited to this. In the present invention, the substrate support plate may be provided with two or more predetermined numbers of holes for each of the multiple small pieces.

[0054] [Pattern] Those skilled in the art will understand that the exemplary embodiments described above are specific examples of the following embodiments.

[0055] (Item 1) The wafer substrate has a flat plate shape that conforms to the outer circumference shape and includes a main body that supports the wafer substrate when the wafer substrate is plasma diced. The substrate support plate has a main body portion in which a plurality of holes are formed that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

[0056] (Item 2) The substrate support plate according to item 1, wherein each of the plurality of holes is formed to have a smaller area in plan view than each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

[0057] (Item 3) The substrate support plate according to item 1 or 2, wherein the main body is formed of a material that can be attracted by an electrostatic chuck, and includes a first surface that supports the wafer substrate via a substrate fixing tape, and a second surface that is positioned on the side opposite to the first surface and is attracted by the electrostatic chuck.

[0058] (Item 4) A substrate support plate according to any one of items 1 to 3, wherein the outer circumference of the main body portion has a notch or a straight section formed along a positioning portion which includes at least one of a notch and an orientation flat provided on the wafer substrate.

[0059] (Item 5) A substrate support plate that supports the wafer substrate, A substrate processing apparatus comprising: a processing chamber in which the wafer substrate is placed; and a substrate holding section located in the processing chamber and holding the wafer substrate supported by the substrate support plate, A substrate processing system wherein the substrate support plate has a flat plate shape that conforms to the outer peripheral shape of the wafer substrate, and includes a main body portion that supports the wafer substrate when the wafer substrate is plasma diced, and the main body portion has a plurality of holes formed therein that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate. [Explanation of Symbols]

[0060] 10: Processing chamber, 20: Substrate mounting section (substrate holding section), 30: Gas supply device, 40: Plasma generation device, 50: Exhaust device, 60: High-frequency power supply, 70: Control unit, 100: Substrate processing system, 200: Substrate processing device, 300: Substrate support plate, 310: Main body, 311: First surface, 312: Second surface, 320: Hole section, 330: Straight section, 331: Notch section, C: Small piece, P: Wafer substrate, T: Substrate fixing tape

Claims

1. The wafer substrate has a flat plate shape that conforms to the outer circumference shape and includes a main body that supports the wafer substrate when the wafer substrate is plasma diced. The substrate support plate has a main body portion in which a plurality of holes are formed that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

2. The substrate support plate according to claim 1, wherein each of the plurality of holes is formed to have a smaller area in plan view than each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

3. The substrate support plate according to claim 1, wherein the main body is formed of a material that can be attracted by an electrostatic chuck, and includes a first surface that supports the wafer substrate via a substrate fixing tape, and a second surface that is disposed on the surface opposite to the first surface and is attracted by the electrostatic chuck.

4. The substrate support plate according to claim 1, wherein a notch or a straight section is formed on the outer circumference of the main body portion, along a positioning portion that includes at least one of a notch and an orientation flat provided on the wafer substrate.

5. A substrate support plate that supports the wafer substrate, A substrate processing apparatus comprising: a processing chamber in which the wafer substrate is placed; and a substrate holding section located in the processing chamber and holding the wafer substrate supported by the substrate support plate, A substrate processing system wherein the substrate support plate has a flat plate shape that conforms to the outer peripheral shape of the wafer substrate, and includes a main body portion that supports the wafer substrate when the wafer substrate is plasma diced, and the main body portion has a plurality of holes formed therein that penetrate in the thickness direction at positions corresponding to each of the plurality of small pieces obtained by plasma dicing the wafer substrate.

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