Substrate processing apparatus and substrate processing method

Abstract

To provide a technology that can efficiently adjust the temperature inside a processing container.SOLUTION: A substrate processing device includes a processing container, a heating mechanism, a temperature measuring device, and a control portion. The processing container accommodates a substrate in an internal space. The heating mechanism heats the internal space from outside the internal space. The temperature measuring device measures the temperature of the internal space. The control portion controls each of the portions. Further, the control portion includes a measurement portion and an estimation portion. The measurement portion measures a first temperature that is the temperature of the internal space measured by the temperature measuring device when the heating mechanism is heated at the first set temperature, and a second temperature that is the temperature of the internal space measured by the temperature measuring device when the heating mechanism is heated at the second set temperature. The estimation portion calculates a set temperature of the heating mechanism to bring the temperature of the internal space measured by the temperature measuring device to a desired temperature on the basis of the first set temperature, the second set temperature, the first temperature, and the second temperature.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Conventionally, a substrate processing apparatus is known that forms a liquid film for preventing drying on the upper surface of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), and contacts the substrate on which such a liquid film is formed with a supercritical processing fluid to perform a drying process (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently performing temperature adjustment in a processing container.

Means for Solving the Problems

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises a processing container, a heating mechanism, a temperature measuring instrument, and a control unit. The processing container houses a substrate in its internal space. The heating mechanism heats the internal space from the outside. The temperature measuring instrument measures the temperature of the internal space. The control unit controls each part. The control unit also includes a measurement unit and an estimation unit. The measurement unit measures a first temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a first set temperature, and a second temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a second set temperature. The estimation unit estimates the set temperature of the heating mechanism to bring the temperature of the internal space measured by the temperature measuring instrument to a desired temperature, based on the first set temperature, the second set temperature, the first temperature, and the second temperature. [Effects of the Invention]

[0006] According to this disclosure, temperature control within the processing container can be efficiently performed. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view of the substrate processing system according to the embodiment, viewed from above. [Figure 2] Figure 2 is a schematic cross-sectional view of the substrate processing system according to the embodiment, viewed from the side. [Figure 3] Figure 3 shows an example of the configuration of a liquid processing unit. [Figure 4] Figure 4 is a schematic perspective view showing an example of the configuration of a drying unit. [Figure 5] Figure 5 is a flowchart showing a series of substrate processing steps performed in the substrate processing system according to the embodiment. [Figure 6] Figure 6 is a cross-sectional view showing an example of the configuration of a drying unit. [Figure 7] Figure 7 is a block diagram showing an example of the configuration of a control device according to the embodiment. [Figure 8]Figure 8 shows the changes in chamber temperature during the control process according to this embodiment. [Figure 9] Figure 9 is a diagram illustrating the estimation process according to the embodiment. [Figure 10] Figure 10 is a flowchart showing the steps of the control process performed in the substrate processing system according to the embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the substrate processing apparatus and substrate processing method disclosed herein will be described in detail below with reference to the attached drawings. However, the embodiments described below do not limit this disclosure. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Moreover, there may be differences in dimensional relationships and ratios between drawings.

[0009] Conventionally, there is a known substrate processing apparatus that forms a liquid film on the upper surface of a substrate, such as a semiconductor wafer (hereinafter referred to as a wafer), to prevent drying, and then brings the substrate with the liquid film in contact with a supercritical processing fluid to perform a drying process. Such substrate processing apparatuses have a robustly designed processing container to hold the high-pressure supercritical fluid in its internal space.

[0010] On the other hand, if the processing container is designed to be rigid, its heat retention capacity becomes very large, meaning that the heater's set temperature and the temperature of the internal space do not necessarily coincide. Therefore, when adjusting the internal space to the desired temperature, it was necessary to repeatedly fine-tune the heater's set temperature. In other words, with the conventional technology described above, a very long time was required to adjust the internal space to the desired temperature.

[0011] Therefore, there is a need for technology that can overcome the aforementioned problems and efficiently control the temperature inside the processing container.

[0012] <Configuration of the substrate processing system> First, the configuration of the substrate processing system 1 (an example of a substrate processing apparatus) according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view of the substrate processing system 1 according to the embodiment as seen from above. Further, FIG. 2 is a schematic cross-sectional view of the substrate processing system 1 according to the embodiment as seen from the side. Hereinafter, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0013] As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C for horizontally accommodating a plurality of semiconductor wafers W (hereinafter, also referred to as "wafer W") are placed on the carrier placement unit 11. The wafer W is an example of a substrate.

[0015] The transfer unit 12 is provided adjacent to the carrier placement unit 11. Inside the transfer unit 12, a transfer device 13 and a delivery unit 14 are arranged.

[0016] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 13 can move in the horizontal and vertical directions and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0017] The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0018] The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped-shaped area extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is arranged in the transfer area 15.

[0019] The transport device 16 is equipped with a wafer holding mechanism for holding wafers W. The transport device 16 is also capable of moving horizontally and vertically, as well as rotating about a vertical axis, and uses the wafer holding mechanism to transport wafers W between the transfer unit 14 and the multiple processing blocks 5.

[0020] Multiple processing blocks 5 are arranged adjacent to the transport area 15 on one side of the transport area 15. Specifically, the multiple processing blocks 5 are arranged on one side of the transport area 15 (the negative Y-axis side in the diagram) in a direction (Y-axis direction) perpendicular to the direction in which the loading / unloading stations 2 and processing stations 3 are aligned (X-axis direction).

[0021] Furthermore, as shown in Figure 2, the multiple processing blocks 5 are arranged in multiple tiers along the vertical direction. In this embodiment, the number of tiers of the multiple processing blocks 5 is three, but the number of tiers of the multiple processing blocks 5 is not limited to three.

[0022] As described above, in the substrate processing system 1 according to this embodiment, a plurality of processing blocks 5 are arranged in multiple stages on one side of the transport block 4. The transport of wafers W between the processing blocks 5 arranged in each stage and the transfer unit 14 is performed by a common transport device 16 located on the transport block 4.

[0023] Each processing block 5 comprises a liquid processing unit 17 and a drying unit 18. The liquid processing unit 17 performs a cleaning process on the upper surface of the wafer W, which is the pattern formation surface. Furthermore, the liquid processing unit 17 performs a process to form a liquid film on the upper surface of the wafer W after chemical treatment. The configuration of the liquid processing unit 17 will be described later.

[0024] The drying unit 18 performs supercritical drying on the wafer W after the liquid film formation treatment. Specifically, the drying unit 18 dries the wafer W by bringing it into contact with a processing fluid in a supercritical state (hereinafter also referred to as "supercritical fluid").

[0025] In the embodiments described below, an example is shown in which supercritical drying is performed as the process carried out in the drying unit 18. However, the process carried out in the drying unit 18 is not limited to supercritical drying, and may include a process of modifying the wafer W with a supercritical fluid, etc. The configuration of the drying unit 18 will be described later.

[0026] Although not shown in Figures 1 and 2, the substrate processing system 1 includes a supply unit that supplies a processing fluid to the drying unit 18. Specifically, this supply unit comprises a group of supply equipment including a flow meter, flow regulator, back pressure valve, heater, etc., and a housing that accommodates the group of supply equipment. In this embodiment, the supply unit supplies CO2 as the processing fluid to the drying unit 18.

[0027] The liquid processing unit 17 and the drying unit 18 are arranged along the transport area 15 (i.e., along the X-axis). Of the liquid processing unit 17 and the drying unit 18, the liquid processing unit 17 is positioned closer to the loading / unloading station 2, while the drying unit 18 is positioned further away from the loading / unloading station 2.

[0028] Thus, each processing block 5 is equipped with one liquid processing unit 17 and one drying unit 18. In other words, the substrate processing system 1 is provided with the same number of liquid processing units 17 and drying units 18.

[0029] As shown in Figure 1, the substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer and comprises a control unit 61 and a storage unit 62.

[0030] The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and various circuits. The CPU of this microcomputer reads and executes programs stored in the ROM to control the transport devices 13 and 16, the liquid processing unit 17, and the drying unit 18.

[0031] Furthermore, such a program may have been stored on a computer-readable storage medium and installed from that storage medium to the storage unit 62 of the control device 6. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0032] The memory unit 62 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs. Details of the control device 6 will be described later.

[0033] <Configuration of the liquid treatment unit> Next, the configuration of the liquid treatment unit 17 will be explained with reference to Figure 3. Figure 3 is a diagram showing an example of the configuration of the liquid treatment unit 17. The liquid treatment unit 17 is configured as a single-wafer cleaning device that cleans wafers W one by one by spin cleaning.

[0034] As shown in Figure 3, the liquid processing unit 17 holds the wafer W almost horizontally in a wafer holding mechanism 25 located within the outer chamber 23 that forms the processing space, and rotates the wafer W by rotating this wafer holding mechanism 25 around a vertical axis.

[0035] The liquid treatment unit 17 then inserts a nozzle arm 26 above the rotating wafer W and supplies a chemical solution and a rinsing solution in a predetermined order from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26, thereby performing a cleaning treatment on the upper surface of the wafer W.

[0036] Furthermore, the liquid treatment unit 17 also has a chemical supply passage 25a formed inside the wafer holding mechanism 25. The chemicals and rinsing liquid supplied from this chemical supply passage 25a also clean the underside of the wafer W.

[0037] The cleaning process begins with the removal of particles and organic contaminants using an alkaline chemical solution, SC1 solution (a mixture of ammonia and hydrogen peroxide). Next, rinsing is performed using a rinsing solution, deionized water (DIW).

[0038] Next, the native oxide film is removed using a diluted hydrofluoric acid solution (DHF), which is an acidic chemical, followed by rinsing with DIW.

[0039] The various chemical solutions described above are collected in the outer chamber 23 and the inner cup 24 located inside the outer chamber 23, and discharged from the drain port 23a at the bottom of the outer chamber 23 and the drain port 24a at the bottom of the inner cup 24. Furthermore, the atmosphere inside the outer chamber 23 is exhausted from the exhaust port 23b at the bottom of the outer chamber 23.

[0040] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid treatment unit 17 supplies liquid IPA (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. This replaces the DIW remaining on both sides of the wafer W with IPA. After that, the liquid treatment unit 17 slowly stops rotating the wafer holding mechanism 25.

[0041] After the liquid film formation process is complete, the wafer W, with the liquid film of IPA liquid still formed on its upper surface, is transferred to the transport device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 and unloaded from the liquid processing unit 17.

[0042] The liquid film formed on the wafer W prevents the pattern from collapsing due to the evaporation (vaporization) of the liquid on the upper surface of the wafer W during transport of the wafer W from the liquid processing unit 17 to the drying unit 18, or during the loading operation into the drying unit 18.

[0043] <Overview of the drying unit> Next, the configuration of the drying unit 18 will be explained with reference to Figure 4. Figure 4 is a schematic perspective view showing an example of the configuration of the drying unit 18.

[0044] The drying unit 18 comprises a housing 31, a holding plate 32, and a lid member 33. The housing 31 is an example of a processing container. The housing 31 has an opening 34 for loading and unloading wafers W. The holding plate 32 holds the wafers W to be processed in the horizontal direction. The lid member 33 supports the holding plate 32 and seals the opening 34 when wafers W are loaded into the housing 31.

[0045] The housing 31 is a container with an internal space 31a (see Figure 6) formed inside, capable of accommodating, for example, a wafer W with a diameter of 300 mm. Supply ports 35, 36 and a discharge port 37 are provided on its wall. The supply ports 35, 36 and the discharge port 37 are connected to supply and discharge channels, respectively, for circulating supercritical fluid to the drying unit 18.

[0046] The supply port 35 is connected to the side of the housing 31 opposite to the opening 34. The supply port 36 is connected to the bottom of the housing 31. Furthermore, the discharge port 37 is connected to the lower side of the opening 34. Although Figure 4 shows two supply ports 35 and 36 and one discharge port 37, the number of supply ports 35 and 36 and the discharge port 37 are not particularly limited.

[0047] Furthermore, fluid supply headers 38 and 39 and a fluid discharge header 40 are provided inside the housing 31. Multiple supply ports are formed in the longitudinal direction of the fluid supply headers 38 and 39, and multiple discharge ports are formed in the longitudinal direction of the fluid discharge header 40, which also has multiple discharge ports.

[0048] The fluid supply header 38 is connected to the supply port 35 and is located inside the housing 31 adjacent to the side opposite to the opening 34. The multiple supply ports formed alongside the fluid supply header 38 face the opening 34.

[0049] The fluid supply header 39 is connected to the supply port 36 and is located in the center of the bottom surface inside the housing 31. The multiple supply ports formed alongside the fluid supply header 39 face upward.

[0050] The fluid discharge header 40 is connected to the discharge port 37 and is located inside the housing 31 adjacent to the side facing the opening 34, and below the opening 34. The multiple discharge ports formed alongside the fluid discharge header 40 face upward.

[0051] Fluid supply headers 38 and 39 supply supercritical fluid into the housing 31. Fluid discharge header 40 guides the supercritical fluid inside the housing 31 to the outside and discharges it. The supercritical fluid discharged to the outside of the housing 31 via the fluid discharge header 40 includes IPA liquid dissolved in the supercritical fluid from the top surface of the wafer W.

[0052] Within the drying unit 18, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid under high pressure (e.g., 16 MPa), gradually dissolving into the supercritical fluid, and the spaces between the patterns are gradually replaced by the supercritical fluid. Ultimately, the spaces between the patterns are filled solely with the supercritical fluid.

[0053] Then, after the IPA liquid is removed from between the patterns, the pressure inside the housing 31 is reduced from a high-pressure state to atmospheric pressure, causing the CO2 to change from a supercritical state to a gaseous state, and the spaces between the patterns are filled only with gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0054] In this case, the supercritical fluid has lower viscosity than a liquid (e.g., IPA liquid), and also has a high ability to dissolve liquids. Furthermore, there is no interface between the supercritical fluid and the liquid or gas in equilibrium. As a result, in drying treatment using a supercritical fluid, the liquid can be dried without being affected by surface tension. Therefore, according to this embodiment, it is possible to suppress the collapse of the pattern during the drying treatment.

[0055] In this embodiment, an example is shown in which IPA liquid is used as the liquid to prevent drying and supercritical CO2 is used as the processing fluid. However, a liquid other than IPA may be used as the liquid to prevent drying, and a fluid other than supercritical CO2 may be used as the processing fluid.

[0056] <Substrate Processing Flow> Next, the processing flow of the wafer W in the substrate processing system 1 described above will be explained with reference to Figure 5. Figure 5 is a flowchart showing a series of substrate processing steps performed in the substrate processing system 1 according to the embodiment. The series of substrate processing steps shown in Figure 5 are performed according to the control of the control unit 61.

[0057] Furthermore, as an example, a series of substrate processing steps performed on a single wafer W are shown here. In the substrate processing system 1, the series of substrate processing steps shown in Figure 5 are performed in parallel on multiple wafers W.

[0058] In the substrate processing system 1, first, the transport device 13 removes the wafer W from the carrier C and places it on the transfer unit 14 (step S101). Specifically, the transport device 13 uses a wafer holding mechanism to remove the wafer W from the carrier C and places the removed wafer W on the transfer unit 14.

[0059] Next, the substrate processing system 1 performs a first transport process (step S102). The first transport process involves the transport device 16 taking the wafer W from the transfer unit 14 and transporting it to the liquid processing unit 17.

[0060] Specifically, the transport device 16 uses a wafer holding mechanism to remove the wafer W from the transfer unit 14 and transports the removed wafer W to the liquid processing unit 17 of the processing block 5.

[0061] Next, in the substrate processing system 1, liquid processing is performed in the liquid processing unit 17 (step S103). Specifically, the liquid processing unit 17 removes particles, native oxide films, and other contaminants from the upper surface of the wafer W by supplying various chemical solutions and rinsing solutions to the upper surface of the wafer W, which is the pattern formation surface.

[0062] Next, the liquid processing unit 17, for example, supplies IPA liquid to the upper surface of the wafer W after the cleaning process, thereby forming a liquid film of IPA liquid on the upper surface of the wafer W.

[0063] Next, the substrate processing system 1 performs a second transport process (step S104). This second transport process involves the transport device 16 removing the wafer W, on which a liquid film has been formed on its upper surface, from the liquid processing unit 17 and transporting it to the drying unit 18.

[0064] Specifically, the transport device 16 uses a wafer holding mechanism to remove the wafer W from the liquid processing unit 17 and transports the removed wafer W to the corresponding drying unit 18 of the processing block 5.

[0065] Next, in the substrate processing system 1, a drying process is performed in the drying unit 18 (step S105). In this drying process, the drying unit 18 dries the wafer W, on which a liquid film has formed on its upper surface, by bringing it into contact with a supercritical fluid.

[0066] Next, the substrate processing system 1 performs a third transport process (step S106). This third transport process involves the transport device 16 removing the dried wafer W from the drying unit 18 and transporting it to the transfer unit 14.

[0067] Specifically, the transport device 16 uses a wafer holding mechanism to remove the wafer W from the drying unit 18 and places the removed wafer W on the transfer unit 14.

[0068] Next, in the substrate processing system 1, the transport device 13 takes the wafer W from the transfer unit 14 and transports it to the carrier C (step S107). Specifically, the transport device 13 uses a wafer holding mechanism to take the wafer W from the transfer unit 14 and places the taken wafer W on the carrier C. Once this transport process is complete, the series of substrate processing for one wafer W is finished.

[0069] <Temperature control mechanism of the drying unit> Next, the configuration of the temperature control mechanism in the drying unit 18 will be explained with reference to Figure 6. Figure 6 is a cross-sectional view showing an example of the configuration of the drying unit 18. Note that in Figure 6, for ease of understanding, the fluid supply header 38, fluid supply header 39, and fluid discharge header 40 shown in Figure 4 have been omitted.

[0070] As described above, the housing 31 has an internal space 31a capable of accommodating a wafer W (see Figure 4). The housing 31 also has an opening 34 connected to the internal space 31a for loading and unloading the wafer W.

[0071] The holding plate 32 holds the wafer W to be processed in a horizontal direction. The lid member 33 supports the holding plate 32 and seals the opening 34 when the wafer W is loaded into the housing 31.

[0072] Furthermore, the housing 31 is equipped with a chamber heater 41 and a temperature measuring device 42. The chamber heater 41 is an example of a heating mechanism and heats the internal space 31a from the outside.

[0073] Multiple chamber heaters 41 (four in the figure) are provided to surround the internal space 31a, for example, as shown in Figure 6. The chamber heaters 41 are, for example, rod-shaped and are positioned to penetrate the interior of the housing 31 along a predetermined direction (the X-axis direction in the figure).

[0074] Note that the number and arrangement of the chamber heaters 41 are not limited to the example in Figure 6; any number and arrangement is acceptable as long as it is possible to heat the internal space 31a.

[0075] The temperature measuring device 42 measures the temperature of the internal space 31a. The temperature measuring device 42 can measure the temperature of the internal space 31a by, for example, exposing its tip to the internal space 31a. Note that the arrangement of the temperature measuring device 42 is not limited to the example in Figure 6, and any arrangement is acceptable as long as it is possible to measure the temperature of the internal space 31a.

[0076] <Details of control processing> Next, the details of the control process according to the embodiment will be described with reference to Figures 7 to 9. Figure 7 is a block diagram showing an example of the configuration of the control device 6 according to the embodiment. As shown in Figure 7, the control device 6 comprises a control unit 61 and a storage unit 62.

[0077] Furthermore, the control device 6 is connected to the chamber heater 41 and the temperature measuring instrument 42 described above. Note that the control device 6 may also have various functional units known to be present in a computer, in addition to the functional units shown in Figure 7, such as various input devices and audio output devices.

[0078] The storage unit 62 is implemented by, for example, semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs. The storage unit 62 stores information used for processing in the control unit 61.

[0079] The control unit 61 is implemented, for example, by a CPU, MPU (Micro Processing Unit), GPU (Graphics Processing Unit), etc., which executes a program stored in the memory unit 62 using RAM as the working area.

[0080] Furthermore, the control unit 61 may be implemented using an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0081] The control unit 61 comprises a measurement unit 61a, an estimation unit 61b, and an adjustment unit 61c, and realizes or executes the functions and operations of the control processing described below. Note that the internal configuration of the control unit 61 is not limited to the configuration shown in Figure 7, and other configurations are also acceptable as long as they perform the control processing described later.

[0082] The measurement unit 61a measures temperature data that shows the correlation between the temperature of the internal space 31a of the housing 31 (hereinafter also referred to as the chamber temperature) and the set temperature of the chamber heater 41 (hereinafter also referred to as the heater temperature). The details of the processing by this measurement unit 61a will be explained with reference to Figure 8.

[0083] Figure 8 shows the changes in chamber temperature during the control process according to the embodiment. The control process described below is performed, for example, with the internal space 31a of the housing 31 in an atmospheric environment. As shown in Figure 8, the measuring unit 61a first turns off the chamber heater 41 until the chamber temperature becomes sufficiently low.

[0084] Next, at time T0, the measuring unit 61a sets the chamber heater 41 to temperature X1 and operates the chamber heater 41. Temperature X1 is an example of a first set temperature, for example, around 100°C. Then, the chamber temperature gradually rises from temperature Y0.

[0085] Then, assuming the heater temperature is temperature X1, the measuring unit 61a measures the chamber temperature from time T1, which is the time when a sufficient amount of time (e.g., 12 hours) has elapsed for the chamber temperature to reach a steady state, to time T2, which is the time when a further given amount of time (e.g., 1 hour) has elapsed.

[0086] For example, in the example shown in Figure 8, when the heater temperature is X1, the chamber temperature that reaches a steady state is Y1. Temperature Y1 is an example of a first temperature.

[0087] Next, at time T2, the measurement unit 61a changes the set temperature of the chamber heater 41 from temperature X1 to temperature X2 and continues to operate the chamber heater 41. Temperature X2 is an example of a second set temperature and is higher than temperature X1 (for example, around 115°C). Then, the chamber temperature gradually rises from temperature Y1.

[0088] Then, assuming the heater temperature is temperature X2, the measuring unit 61a measures the chamber temperature from time T3, when a sufficient amount of time (e.g., 12 hours) has elapsed for the chamber temperature to reach a steady state, to time T4, when a further given amount of time (e.g., 1 hour) has elapsed.

[0089] For example, in the example shown in Figure 8, when the heater temperature is X2, the chamber temperature that reaches a steady state is Y2. Temperature Y2 is an example of a second temperature. This completes the measurement process by the measurement unit 61a.

[0090] Returning to the explanation of Figure 7, the estimation unit 61b estimates the set temperature of the chamber heater 41 to bring the temperature of the internal space 31a to the desired temperature, based on the temperature data showing the correlation between the chamber temperature and the heater temperature measured by the measurement unit 61a as described above. The details of the processing by this estimation unit 61 will be explained using Figure 9.

[0091] Figure 9 is a diagram illustrating the estimation process according to the embodiment, and shows the correlation between the heater temperature and the chamber temperature. In the embodiment, as shown in Figure 9, the estimation unit 61b plots the chamber temperature (temperature Y1) when the heater temperature is temperature X1 on an XY coordinate system (point P1).

[0092] Furthermore, the estimation unit 61b plots the chamber temperature (temperature Y2) when the heater temperature is temperature X2 on an XY coordinate system (point P2).

[0093] In this embodiment, the housing 31 of the drying unit 18 is designed to be robust in order to hold the high-pressure supercritical fluid in the internal space 31a. As a result, the heat storage capacity of the housing 31 is very large, and there is a linear correlation between the heater temperature and the chamber temperature in the housing 31.

[0094] Therefore, in this embodiment, the estimation unit 61b determines a straight line L that passes through points P1 and P2 in the XY coordinate system. The straight line L in the XY coordinate system is given by the following equation (1). X={(X2-X1) / (Y2-Y1)}(Y-Y1)+X1 ···(1)

[0095] Then, the estimation unit 61b inputs the desired chamber temperature (hereinafter also referred to as the desired temperature Ya) into equation (1) to estimate the set temperature Xa of the chamber heater 41 that corresponds to the desired temperature Ya of the internal space 31a.

[0096] In other words, as shown in Figure 9, the estimation unit 61b finds point Pa, which is the intersection of the line L and the line Y=Ya, and sets the value of X at this point Pa as the set temperature Xa of the chamber heater 41, which corresponds to the desired temperature Ya of the internal space 31a.

[0097] This allows for efficient determination of the chamber heater's set temperature Xa, which corresponds to the desired temperature Ya of the internal space 31a, without repeatedly fine-tuning the chamber heater's set temperature 41. Therefore, according to this embodiment, temperature control within the housing 31 can be efficiently performed.

[0098] Furthermore, in this embodiment, the set temperature Xa of the chamber heater 41 corresponding to the desired temperature Ya of the internal space 31a is estimated based on a linear function (i.e., equation (1)) calculated from the heater temperatures X1 and X2 and the chamber temperatures Y1 and Y2. This allows for accurate and efficient estimation of the set temperature Xa of the chamber heater 41.

[0099] Returning to the explanation of Figure 7, the adjustment unit 61c uses the set temperature Xa of the chamber heater 41 estimated by the estimation unit 61b, as described above, to adjust the temperature of the internal space 31a to the desired temperature Ya. The details of the process performed by this adjustment unit 61c will be explained with reference to Figure 8.

[0100] At time T4, when the above-described measurement process is completed, the adjustment unit 61c turns off the chamber heater 41. Then, the chamber temperature gradually decreases from temperature Y2. At this time, the estimation unit 61b calculates equation (1) above and further estimates the set temperature Xa of the chamber heater 41 corresponding to the desired temperature Ya of the internal space 31a from equation (1).

[0101] Then, at time T5, when the temperature Y3 is lower than the desired temperature Ya, the adjustment unit 61c sets the temperature of the chamber heater 41 to the set temperature Xa and operates the chamber heater 41. As a result, the chamber temperature gradually rises from temperature Y3, and at time T6, the chamber temperature reaches the desired temperature Ya.

[0102] Furthermore, the adjustment unit 61c measures the chamber temperature from time T6 to time T7, which is a given time (for example, 1 hour) after that time has elapsed, and confirms that the chamber temperature has stabilized at the desired temperature Ya, and then terminates the adjustment process.

[0103] In this embodiment, as shown in Figure 8, it is preferable to align the direction of temperature change when measuring chamber temperatures Y1 and Y2 during the measurement process and when adjusting the chamber temperature to the desired temperature Ya during the adjustment process.

[0104] For example, in the example shown in Figure 8, the chamber heater 41 is operated to reach temperature Y1 from a temperature lower than Y1, and then the temperature Y2 is measured by operating the chamber heater 41 to reach temperature Y2 from a temperature lower than Y2.

[0105] Similarly, in the example shown in Figure 8, the chamber heater 41 is operated to raise the temperature of the internal space 31a to the desired temperature Ya from a temperature Y3 lower than the desired temperature Ya.

[0106] In this way, by aligning the direction of temperature change between the measurement process and the adjustment process, the internal space 31a can be adjusted to the desired temperature Ya with greater precision compared to the case where the direction of temperature change between the measurement process and the adjustment process is not aligned.

[0107] Furthermore, this disclosure is not limited to the example shown in Figure 8. When measuring chamber temperatures Y1 and Y2 during the measurement process, and when adjusting the chamber temperature to a desired temperature Ya during the adjustment process, the direction of the temperature may be aligned to lower the temperature.

[0108] On the other hand, when measuring chamber temperatures Y1 and Y2 during the measurement process, and when adjusting the chamber temperature to the desired temperature Ya during the adjustment process, by aligning the direction of temperature increases, it is possible to start the measurement process from a lower chamber temperature.

[0109] Therefore, according to this embodiment, the measurement process can be started more quickly, and the electricity consumption of the chamber heater 41 can be reduced.

[0110] In addition, in the embodiment, during the measurement process by the measuring unit 61a, it is preferable to first heat the chamber heater 41 to a temperature X1, and then heat the chamber heater 41 to a temperature X2 that is higher than temperature X1.

[0111] This allows for a smooth alignment of the temperature direction, both when measuring chamber temperatures Y1 and Y2 during the measurement process and when adjusting the chamber temperature to the desired temperature Ya during the adjustment process, thereby increasing the temperature.

[0112] Therefore, according to this embodiment, the measurement process can be started more quickly, and the electricity consumption of the chamber heater 41 can be reduced.

[0113] Furthermore, when measuring chamber temperatures Y1 and Y2 during the measurement process, and when adjusting the chamber temperature to the desired temperature Ya during the adjustment process, if the temperature direction is to be aligned in order to lower the temperature, it is preferable that temperature X2 is lower than temperature X1.

[0114] This allows for a smooth alignment of the temperature direction to lower the temperature, both when measuring chamber temperatures Y1 and Y2 during the measurement process and when adjusting the chamber temperature to the desired temperature Ya during the adjustment process.

[0115] Furthermore, although the above embodiment shows an example in which preset temperatures X1 and X2 are used as heater temperatures in the measurement process, this disclosure is not limited to such an example.

[0116] For example, after installing the substrate processing system 1, the initially estimated set temperature Xa1 may be used, and in subsequent measurement processes, the heater temperature may first be set to temperature Xa1-α, and then to temperature Xa1+α.

[0117] As a result, in subsequent measurement processes, point Pa shown in Figure 9 can be positioned near the midpoint between points P1 and P2, allowing for a more accurate estimation of the set temperature Xa of the chamber heater 41.

[0118] In this case, the value of α used in the second and subsequent measurement processes should be in the range of 5°C to 10°C. This allows for a more accurate estimation of the set temperature Xa of the chamber heater 41.

[0119] Furthermore, while the above embodiment shows an example where a waiting period (for example, 12 hours) is observed before measuring the chamber temperature Y1 (or temperature Y2), this disclosure is not limited to such an example.

[0120] For example, the measuring unit 61a may continuously measure the temperature of the internal space 31a measured by the temperature measuring instrument 42, and define the chamber temperature from the time the chamber temperature reaches a steady state until a given time (e.g., 1 hour) has elapsed, as temperature Y1 (or temperature Y2).

[0121] This allows the measurement process to be completed in a shorter time, making it possible to control the temperature inside the housing 31 more efficiently.

[0122] Furthermore, in the embodiments described above, as shown in Figures 8 and 9, an example was shown in which the set temperature Xa is estimated by using two heater temperatures under different conditions in the measurement process and plotting two points P1 and P2 on the XY coordinate system in the estimation process. However, this disclosure is not limited to such an example.

[0123] For example, in this disclosure, the set temperature Xa may be estimated by using heater temperatures under three or more conditions in the measurement process and plotting three or more points on an XY coordinate system in the estimation process. This makes it possible to estimate the set temperature Xa of the chamber heater 41 with even greater accuracy.

[0124] In this case, instead of the straight line L shown in Figure 9, an approximate straight line may be drawn to coincide with three or more points, or an approximate curve may be drawn to coincide with three or more points.

[0125] Furthermore, although the above embodiment shows an example in which the measurement process by the measurement unit 61a, the estimation process by the estimation unit 61b, and the adjustment process by the adjustment unit 61c are performed in succession, this disclosure is not limited to such an example.

[0126] For example, the measurement process by the measurement unit 61a and the estimation process by the estimation unit 61b may be performed in advance to estimate the set temperature Xa. Then, when additional adjustment processing becomes necessary, the adjustment processing may be performed using the previously estimated set temperature Xa.

[0127] Furthermore, in this disclosure, it is not necessary to perform measurement and estimation processes each time before performing the adjustment process. Except immediately after installing the substrate processing system 1 or when replacing any part of the drying unit 18 (for example, the chamber heater 41 or the temperature measuring instrument 42), the adjustment process may be performed using the previously set temperature Xa.

[0128] The substrate processing apparatus (substrate processing system 1) according to this embodiment comprises a processing container (housing 31), a heating mechanism (chamber heater 41), a temperature measuring instrument 42, and a control unit 61. The processing container (housing 31) houses a substrate (wafer W) in its internal space 31a. The heating mechanism (chamber heater 41) heats the internal space 31a from the outside. The temperature measuring instrument 42 measures the temperature of the internal space 31a. The control unit 61 controls each part. The control unit 61 also has a measurement unit 61a and an estimation unit 61b. The measurement unit 61a measures a first temperature (temperature Y1), which is the temperature of the internal space 31a measured by the temperature measuring instrument 42 when the heating mechanism (chamber heater 41) is heated to a first set temperature (temperature X1). Furthermore, the measuring unit 61a measures a second temperature (temperature Y2), which is the temperature of the internal space 31a measured by the temperature measuring instrument 42 when the heating mechanism (chamber heater 41) is heated to a second set temperature (temperature X2). Based on the first set temperature, the second set temperature, the first temperature, and the second temperature, the estimation unit 61b estimates the set temperature Xa of the heating mechanism (chamber heater 41) necessary to bring the temperature of the internal space 31a measured by the temperature measuring instrument 42 to a desired temperature (desired temperature Ya). This allows for efficient temperature control within the housing 31.

[0129] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the estimation unit 61b estimates the set temperature Xa of the heating mechanism (chamber heater 41) based on a linear function calculated from the first set temperature, the second set temperature, the first temperature, and the second temperature. This makes it possible to estimate the set temperature Xa of the chamber heater 41 accurately and efficiently.

[0130] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the measurement unit 61a operates the heating mechanism (chamber heater 41) to reach the first temperature (temperature Y1) from a temperature Y0 lower than the first temperature (temperature Y1), thereby measuring the first temperature (temperature Y1). The measurement unit 61a also operates the heating mechanism (chamber heater 41) to reach the second temperature (temperature Y2) from a temperature Y1 lower than the second temperature (temperature Y2), thereby measuring the second temperature (temperature Y2). This allows the measurement process to start more quickly and reduces the electricity consumption of the chamber heater 41.

[0131] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the measurement unit 61a first heats the heating mechanism (chamber heater 41) to a first set temperature (temperature X1) and measures the first temperature (temperature Y1). The measurement unit 61a then heats the heating mechanism to a second set temperature (temperature X2) which is higher than the first set temperature (temperature X1) and measures the second temperature (temperature Y2). This allows the measurement process to start more quickly and reduces the electricity consumption of the chamber heater 41.

[0132] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the substrate (wafer W) is processed in the processing container (housing 31) by a supercritical processing fluid supplied to the internal space 31a. As a result, even if the housing 31 is robustly designed for supercritical processing and has a very large heat storage capacity, the temperature inside the housing 31 can be efficiently controlled.

[0133] <Control Processing Procedure> Next, the procedure for the control processing according to the embodiment will be explained with reference to Figure 10. Figure 10 is a flowchart showing an example of the procedure for the control processing performed by the substrate processing system 1 according to the embodiment.

[0134] In the control process according to this embodiment, first, the control unit 61 performs a measurement process (step S201). Specifically, the control unit 61 first measures the temperature Y1 of the internal space 31a, which is measured by the temperature measuring instrument 42 when the chamber heater 41 is heated to temperature X1. Next, the control unit 61 measures the temperature Y2 of the internal space 31a, which is measured by the temperature measuring instrument 42 when the chamber heater 41 is heated to temperature X2.

[0135] Next, the control unit 61 estimates the set temperature Xa of the chamber heater 41 to bring the temperature of the internal space 31a, as measured by the temperature measuring instrument 42, to the desired temperature Ya, based on temperatures X1, X2, Y1, and Y2 (step S202).

[0136] Next, the control unit 61 adjusts the temperature of the internal space 31a of the housing 31 to the desired temperature Ya by setting the temperature of the chamber heater 41 to the set temperature Xa (step S203), and ends the series of control processes.

[0137] The substrate processing method according to the embodiment includes a measurement step (step S201) and an estimation step (step S202) in the substrate processing system 1 described above. The measurement step (step S201) measures a first temperature (temperature Y1), which is the temperature of the internal space 31a measured by the temperature measuring instrument 42 when the heating mechanism (chamber heater 41) is heated to a first set temperature (temperature X1). The measurement step (step S201) also measures a second temperature (temperature Y2), which is the temperature of the internal space 31a measured by the temperature measuring instrument 42 when the heating mechanism (chamber heater 41) is heated to a second set temperature (temperature X2). The estimation step (step S202) estimates the set temperature Xa of the heating mechanism to bring the temperature of the internal space 31a measured by the temperature measuring instrument 42 to a desired temperature (desired temperature Ya), based on the first set temperature, the second set temperature, the first temperature, and the second temperature. This allows for efficient temperature control within the housing 31.

[0138] While embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various modifications are possible without departing from its spirit. For example, the above embodiments describe a control process in a drying unit 18 in which a wafer W is processed by a supercritical fluid, but the present disclosure is not limited to such examples, and the technology of the present disclosure may be applied to various processing units in which other processes are performed.

[0139] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0140] W wafer (an example of a substrate) 1. Substrate Processing System (An Example of a Substrate Processing Device) 6 Control device 18 Drying Unit 31. Enclosure (an example of a processing container) 31a Internal space 41. Chamber heater (an example of a heating mechanism) 42 Temperature measuring device 61 Control Unit 61a Measurement section 61b Estimation part 61c Adjustment part X1 Temperature (Example of the first set temperature) X2 Temperature (Example of a second set temperature) Xa Set temperature Y1 Temperature (Example of the first temperature) Y2 Temperature (An example of the second temperature) Ya Desired temperature (an example of a desired temperature)

Claims

1. A processing container that houses the substrate in its internal space, A heating mechanism that heats the internal space from the outside, A temperature measuring device for measuring the temperature of the internal space, A control unit that controls each part, Equipped with, The control unit, A measuring unit that measures a first temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a first set temperature, and a second temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a second set temperature. An estimation unit that estimates the set temperature of the heating mechanism to bring the temperature of the internal space measured by the temperature measuring instrument to a desired temperature, based on the first set temperature, the second set temperature, the first temperature, and the second temperature, An adjustment unit adjusts the temperature of the internal space to the desired temperature using the set temperature of the heating mechanism estimated by the estimation unit, It has, The measuring unit measures the first temperature and the second temperature by setting the direction in which the temperature of the internal space is changed when measuring the first temperature and the direction in which the temperature of the internal space is changed when measuring the second temperature to be the same. The adjustment unit adjusts the temperature of the internal space to the desired temperature by setting the direction in which the temperature of the internal space is changed to be the same as the direction in which the temperature of the internal space is changed when measuring the first temperature and the second temperature. Circuit board processing equipment.

2. The estimation unit, The set temperature of the heating mechanism is estimated based on a linear function calculated using the first set temperature, the second set temperature, the first temperature, and the second temperature. The substrate processing apparatus according to claim 1.

3. The aforementioned measuring unit is The heating mechanism is operated to reach the first temperature from a temperature lower than the first temperature, and the first temperature is measured. The heating mechanism is operated to reach the second temperature from a temperature lower than the second temperature, and the second temperature is measured. The substrate processing apparatus according to claim 1 or 2.

4. The aforementioned measuring unit is First, the heating mechanism is heated to the first set temperature and the first temperature is measured. Next, the heating mechanism is heated to a second set temperature, which is higher than the first set temperature, and the second temperature is measured. The substrate processing apparatus according to claim 1 or 2.

5. In the aforementioned processing vessel, the substrate is processed by a supercritical processing fluid supplied to the internal space. The substrate processing apparatus according to claim 1 or 2.

6. A substrate processing apparatus comprising a processing container for housing a substrate in an internal space, a heating mechanism for heating the internal space from the outside, and a temperature measuring instrument for measuring the temperature of the internal space, A measurement step of measuring a first temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a first set temperature, and a second temperature, which is the temperature of the internal space measured by the temperature measuring instrument when the heating mechanism is heated to a second set temperature. An estimation step of estimating the set temperature of the heating mechanism to bring the temperature of the internal space measured by the temperature measuring instrument to a desired temperature, based on the first set temperature, the second set temperature, the first temperature, and the second temperature; An adjustment step in which the temperature of the internal space is adjusted to the desired temperature using the set temperature of the heating mechanism estimated in the estimation step, Includes, The measurement step involves measuring the first temperature and the second temperature by setting the direction in which the temperature of the internal space is changed when measuring the first temperature and the direction in which the temperature of the internal space is changed when measuring the second temperature to be the same. The adjustment step involves adjusting the temperature of the internal space to the desired temperature by setting the direction in which the temperature of the internal space is changed to be the same as the direction in which the temperature of the internal space is changed when measuring the first and second temperatures. Substrate processing method.

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