Substrate processing equipment

Abstract

To improve the throughput of substrate processing.SOLUTION: A substrate processing apparatus includes: a treatment vessel; a stage provided in the treatment vessel and placing a substrate; an exhaust space arranged around the stage along the inner wall of the treatment vessel; a first exhaust path provided between a treatment space above the stage and the exhaust space and having a conductance smaller than that of the treatment space; and a second exhaust path provided between a lower space below the stage and the exhaust space and having a conductance smaller than that of the treatment space. A processing gas supplied in the treatment space is exhausted through the first exhaust path; a purge gas supplied in the lower space is exhausted through the second exhaust path; and the second exhaust path is led to the first exhaust path or a space on the side of the exhaust space from the first exhaust path.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] Various aspects and embodiments of this disclosure relate to substrate processing apparatus. [Background technology]

[0002] A technique is known in which a gas containing two types of monomers is supplied into a processing container containing a substrate, and a polymer organic film is formed on the substrate by a polymerization reaction of the two types of monomers. For example, a technique is known in which a polymer organic film is formed on a substrate by a vacuum deposition polymerization reaction between an aromatic alkyl, alicyclic, or aliphatic diisocyanate monomer and an aromatic alkyl, alicyclic, or aliphatic diamine monomer (see, for example, Patent Document 1). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] International Publication No. 2008 / 129925 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] This disclosure provides a substrate processing apparatus that can improve the throughput of substrate processing. [Means for solving the problem]

[0005] One aspect of this disclosure is a substrate processing apparatus comprising a processing vessel, a stage, an exhaust space, a first exhaust passage, and a second exhaust passage. The stage is provided inside the processing vessel and on which a substrate is placed. The exhaust space is arranged around the stage along the inner wall of the processing vessel. The first exhaust passage is provided between the processing space above the stage and the exhaust space and has a conductance lower than that of the processing space. The second exhaust passage is provided between the lower space below the stage and the exhaust space and has a conductance lower than that of the processing space. The processing gas supplied into the processing space is exhausted through the first exhaust passage, and the purge gas supplied into the lower space is exhausted through the second exhaust passage. The second exhaust passage is connected to the first exhaust passage or to a space on the exhaust space side of the first exhaust passage. [Effects of the Invention]

[0006] According to various aspects and embodiments of this disclosure, the throughput of substrate processing can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. [Figure 2] Figure 2 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the first embodiment. [Figure 3] Figure 3 is a diagram illustrating an example of the relationship between the conductances of each space in the first embodiment. [Figure 4] Figure 4 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in a comparative example. [Figure 5] Figure 5 is a diagram illustrating an example of the relationship between the conductances of each space in the comparative example. [Figure 6] Figure 6 shows an example of the organic film thickness distribution when the purge gas flow rate is changed in the first embodiment. [Figure 7]Figure 7 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage during cleaning in the first embodiment. [Figure 8] Figure 8 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the second embodiment. [Figure 9] Figure 9 is a diagram illustrating an example of the relationship between the conductances of each space in the second embodiment. [Figure 10] Figure 10 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage during cleaning in the second embodiment. [Figure 11] Figure 11 is an enlarged cross-sectional view showing another example of the structure near the periphery of the stage in the second embodiment. [Figure 12] Figure 12 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage in the third embodiment. [Figure 13] Figure 13 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage during cleaning in the third embodiment. [Figure 14] Figure 14 is an enlarged cross-sectional view showing another example of the structure near the periphery of the stage in the third embodiment. [Figure 15] Figure 15 is an enlarged cross-sectional view showing another example of the condition near the periphery of the stage during cleaning in the third embodiment. [Figure 16] Figure 16 is an enlarged cross-sectional view showing another example of the structure near the periphery of the stage in the third embodiment. [Figure 17] Figure 17 is a diagram illustrating an example of the conductance relationship of each space in another example of the third embodiment. [Modes for carrying out the invention]

[0008] The embodiments of the disclosed substrate processing apparatus will be described in detail below with reference to the drawings. However, the disclosed substrate processing apparatus is not limited to the embodiments described below.

[0009] Incidentally, in the vapor deposition polymerization of organic films, the deposition rate varies greatly depending on the processing conditions. In particular, the concentration of the deposition gas used for depositing the organic film and the temperature of the deposition site are important. For example, if the concentration of the deposition gas is high and the temperature of the deposition site is low, the deposition rate will be high, and if the concentration of the deposition gas is low and the temperature of the deposition site is high, the deposition rate will be low. Therefore, it is preferable to maintain a high concentration of the deposition gas and keep the temperature of the substrate low in the space where the substrate to be deposited is placed.

[0010] On the other hand, in substrate processing equipment that deposits organic films onto substrates, the deposition gases that did not contribute to the formation of the organic film are exhausted. However, some of the deposition gases that did not contribute to the formation of the organic film diffuse into the processing container of the substrate processing equipment, forming an organic film on the inner wall of the processing container, etc. As processing progresses on multiple substrates, the organic film formed on the inner wall of the processing container, etc., grows and may eventually become particles that adhere to the substrates. Therefore, measures are taken to suppress the formation of organic films on the inner wall of the processing container, etc., by heating the inner wall of the processing container, etc.

[0011] However, some parts of the processing chamber are difficult to heat to high temperatures, making it difficult to suppress the formation of organic films in those areas. This necessitates frequent stopping of the film deposition process and cleaning of the chamber, reducing the throughput of the film deposition process. Therefore, it is conceivable to suppress the formation of organic films by supplying a purge gas to the parts of the processing chamber that are difficult to heat and diluting the deposition gas supplied to those parts.

[0012] However, when purge gas flows near the substrate, the concentration of the deposition gas near the substrate decreases, slowing down the rate of organic film deposition on the substrate. This increases the time required to form an organic film of the desired thickness on the substrate, reducing the throughput of substrate processing such as film deposition.

[0013] Therefore, this disclosure provides a technology that can improve the throughput of substrate processing.

[0014] (First Embodiment) [Configuration of the substrate processing apparatus 10] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 10 in one embodiment of the present disclosure. The substrate processing apparatus 10 comprises an apparatus body 200 and a control device 100 that controls the apparatus body 200. The apparatus body 200 has a processing container 209. The processing container 209 has a lower container 201, an exhaust duct 202, a support structure 210, and a shower head 230.

[0015] The lower container 201 is made of a metal such as aluminum. The exhaust duct 202 is provided on the upper periphery of the lower container 201. An annular insulating member 204 is also positioned above the exhaust duct 202. The shower head 230 is provided above the lower container 201 and is supported by the insulating member 204. A support structure 210 on which the substrate W is placed is provided approximately in the center of the lower container 201. The space between the support structure 210 and the shower head 230 is called the processing space S. P This is how it is defined.

[0016] An opening 205 is formed in the side wall of the lower container 201 for loading and unloading the substrate W. The opening 205 is opened and closed by a gate valve G. The exhaust duct 202 has a hollow rectangular shape in its longitudinal cross-section and extends in an annular shape along the top of the lower container 201.

[0017] One end of the exhaust pipe 206 is connected to the exhaust duct 202. The other end of the exhaust pipe 206 is connected to an exhaust system 208 having a vacuum pump, etc., via a pressure regulating valve 207 such as an APC (Auto Pressure Controller) valve. The pressure regulating valve 207 is controlled by the control device 100, and the processing space S P The internal pressure is controlled to a preset pressure.

[0018] Heaters (not shown) are provided on the side walls of the exhaust duct 202 and the upper surface of the shower head 230, and the exhaust duct 202 and shower head 230 are heated to a temperature of, for example, 200°C or higher. This suppresses to some extent the adhesion of reaction by-products (so-called deposits) to the exhaust duct 202 and shower head 230. Heaters may also be provided in the exhaust pipe 206, pressure regulating valve 207, and exhaust device 208, and they may be heated to a temperature that makes it difficult for deposits to adhere.

[0019] The support structure 210 includes a stage 211 and a support portion 212. The stage 211 is made of a metal such as aluminum, and a substrate W is placed on its upper surface. The shower head 230 is positioned opposite the stage 211. The support portion 212 is made of a metal such as aluminum and is cylindrical in shape, and supports the stage 211 from below.

[0020] A heater 214 is embedded in the stage 211. The heater 214 heats the substrate W placed on the stage 211 according to the power supplied to it. The power supplied to the heater 214 is controlled by the control device 100.

[0021] Furthermore, a flow path 215 through which refrigerant flows is formed within the stage 211. A chiller unit (not shown) is connected to the flow path 215 via pipes 216a and 216b. Refrigerant adjusted to a predetermined temperature by the chiller unit is supplied to the flow path 215 via pipe 216a, and the refrigerant circulating within the flow path 215 is returned to the chiller unit via pipe 216b. The stage 211 is cooled by the refrigerant circulating within the flow path 215. The chiller unit is controlled by a control device 100.

[0022] The support section 212 is positioned inside the lower container 201 so as to penetrate an opening formed in the bottom of the lower container 201. The support section 212 moves up and down by the drive of the lifting mechanism 240. The lifting mechanism 240 is an example of a drive unit. When a substrate W is loaded, the support structure 210 is lowered by the drive of the lifting mechanism 240 and the gate valve G is opened. The substrate W is then loaded into the lower container 201 by a transport robot (not shown) through the opening 205 and passed onto a lift pin (not shown) protruding from the stage 211. The lift pin (not shown) is then lowered, and the substrate W is placed on the stage 211. The gate valve G is then closed, and the support structure 210 is raised by the drive of the lifting mechanism 240, and the film deposition process on the substrate W is performed. When the substrate W is unloaded, the support structure 210 is lowered by the drive of the lifting mechanism 240 and the gate valve G is opened. Then, the substrate W is lifted from the stage 211 by the rise of a lift pin (not shown). The substrate W on the lift pin (not shown) is then transported out of the lower container 201 through the opening 205 by a transport robot (not shown).

[0023] The shower head 230 has diffusion chambers 231a and 231b. Diffusion chambers 231a and 231b are not connected to each other. A gas supply unit 220 is connected to diffusion chambers 231a and 231b. Specifically, a valve 224a, an MFC (Mass Flow Controller) 223a, a vaporizer 222a, and a raw material supply source 221a are connected to diffusion chamber 231a via piping 225a. The raw material supply source 221a is a supply source of isocyanate, which is an example of a first monomer. The vaporizer 222a vaporizes the liquid isocyanate supplied from the raw material supply source 221a. The MFC 223a controls the flow rate of the isocyanate vapor vaporized by the vaporizer 222a. The valve 224a controls the supply and cessation of isocyanate vapor to piping 225a.

[0024] The diffusion chamber 231b is connected to a valve 224b, an MFC 223b, a vaporizer 222b, and a raw material supply source 221b via piping 225b. The raw material supply source 221b is a source of amine, which is an example of a second monomer. The vaporizer 222b vaporizes the liquid amine supplied from the raw material supply source 221b. The MFC 223b controls the flow rate of the amine vapor vaporized by the vaporizer 222b. The valve 224b controls the supply and cessation of the amine vapor to piping 225b. Isocyanate vapor and amine vapor are examples of film-forming gases. Furthermore, isocyanate vapor is an example of a first process gas, and amine vapor is an example of a second process gas.

[0025] Furthermore, the shower head 230 is connected to a valve 224c, an MFC 223c, and a cleaning gas supply source 221c via pipes 225a and 225b. The cleaning gas supply source 221c is a source of cleaning gas containing molecules, for example, oxygen atoms or fluorine atoms. The MFC 223c controls the flow rate of the cleaning gas supplied from the cleaning gas supply source 221c. The valve 224c controls the supply and cessation of cleaning gas to pipes 225a and 225b.

[0026] The diffusion chamber 231a is connected to the processing space S via multiple discharge ports 232a. P It is connected to the processing space S via multiple discharge ports 232b, and the diffusion chamber 231b is connected to the processing space S P It is connected to the following. The gas supplied into the diffusion chamber 231a via piping 225a diffuses within the diffusion chamber 231a and is discharged through the outlet 232a into the processing space S P It is discharged in a shower-like manner inside. In addition, the gas supplied to the diffusion chamber 231b via piping 225b diffuses within the diffusion chamber 231b and is discharged through the outlet 232b into the processing space S P The vapors of isocyanate and amine are discharged in a shower-like manner into the processing space S via outlets 232a and 232b. P After being discharged into the processing space S PThe polymer is mixed internally and forms an organic film of urea-bonded polymer on the surface of the substrate W placed on the stage 211.

[0027] For example, linear polyureas can be produced by using a diisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. Examples of diisocyanate and diamine combinations include 4,4'-diphenylmethane diisocyanate (MDI) and 1,12-diaminododecane (DAD). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and 1,12-diaminododecane (DAD). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and 1,3-bis(aminomethyl)cyclohexane (H6XDA). Examples of diisocyanate and diamine combinations include 1,3-bis(isocyanate-methyl)cyclohexane (H6XDI) and hexamethylenediamine (HMDA). Examples of diisocyanate and diamine combinations include m-xylylenediisocyanate (XDI) and m-xylylenediamine (XDA). Examples of diisocyanate and diamine combinations include m-xylylenediisocyanate (XDI) and benzylamine (BA).

[0028] For example, crosslinkable polyureas can be produced by using a diisocyanate as the first monomer and a triamine (e.g., a primary amine) or tetraamine (e.g., a secondary amine) as the second monomer. Alternatively, trimers containing urea bonds can be produced by using a monoisocyanate as the first monomer and a diamine (e.g., a primary amine) as the second monomer. Furthermore, dimers containing urea bonds can be produced by using a monoisocyanate as the first monomer and a monoamine (e.g., a primary amine) as the second monomer.

[0029] The shower head 230 is connected to an RF (Radio Frequency) power supply 260 that supplies RF power for plasma generation via a matcher 261. The shower head 230 functions as a cathode electrode with respect to the stage 211. In the cleaning within the processing vessel 209, cleaning gas is supplied from the gas supply unit 220 into the processing space S P through the shower head 230, and RF power is supplied from the RF power supply 260 into the processing space S P through the matcher 261. As a result, the cleaning gas is plasmaized within the processing space S P and the cleaning within the processing vessel 209 is performed by the active species contained in the plasma.

[0030] A valve 224d, an MFC 223d, and a purge gas supply source 221d are connected to the lower vessel 201 below the stage 211 via a pipe 225d. The purge gas supply source 221d is a supply source of the purge gas. The purge gas is an inert gas such as, for example, nitrogen gas or rare gas. The MFC 223d controls the flow rate of the purge gas supplied from the purge gas supply source 221d. The valve 224d controls the supply and stop of the purge gas to the pipe 225d. The space within the lower vessel 201 below the stage 211 is defined as the lower space S L . By supplying the purge gas into the lower space S L , it is possible to suppress the deposition gas supplied into the processing space S P from entering the lower space S L .

[0031] The control device 100 includes a memory, a processor, and an input / output interface. Control programs, processing recipes, etc. are stored in the memory. The processor reads out the control program from the memory and executes it, and controls each part of the apparatus main body 200 via the input / output interface based on the recipe etc. stored in the memory.

[0032] [Structure near the periphery of the stage 211] Figure 2 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the first embodiment. An annular stage cover 250 is provided around the periphery of the upper surface of the stage 211 on which the substrate W is placed. In this embodiment, the stage cover 250 is provided with an exhaust blade 2501 having a cross-sectional shape that extends away from the side surface of the stage 211 and further protrudes upward along the side wall of the lower container 201, as shown in Figure 2, for example. The exhaust blade 2501 is formed in an annular shape along the outer circumference of the stage 211. The exhaust blade 2501 is an example of a first exhaust blade. A gap is provided between the exhaust blade 2501 and the side wall of the lower container 201.

[0033] Furthermore, a ring-shaped, plate-like ring cover 251 is positioned on top of the stage cover 250. The space between the lower surface of the shower head 230 and the upper surface of the ring cover 251 is defined as the first exhaust passage 30.

[0034] The exhaust duct 202 is provided with a duct cover 252 along the direction of extension of the exhaust duct 202. The duct cover 252 has a slit-shaped exhaust port 2520 formed along the direction of extension of the exhaust duct 202. The duct cover 252 is provided with an exhaust blade 2521, which has a cross-sectional shape that extends away from the side wall of the lower container 201 and hangs downward along the side wall of the lower container 201, as shown in Figure 2, for example. The exhaust blade 2521 is formed in an annular shape along the side wall of the lower container 201. The exhaust blade 2521 is an example of a second exhaust blade. When forming an organic film on the substrate W, the exhaust blade 2501 of the stage cover 250 is positioned between the exhaust blade 2521 of the duct cover 252 and the side wall of the lower container 201, as shown in Figure 2, for example. A gap is provided between the exhaust blade 2521 and the exhaust blade 2501, and between the exhaust blade 2521 and the side wall of the lower container 201.

[0035] The space between the lower container 201 and the exhaust blade 2501, and the space between the exhaust blade 2521 and the exhaust blade 2501 are defined as the second exhaust passage 31. The space inside the exhaust port 2520 is defined as the third exhaust passage 32, and the space enclosed by the duct cover 252 and the exhaust duct 202 is defined as the exhaust space S. E This is defined as follows. Furthermore, the space between the first exhaust passage 30, the second exhaust passage 31, and the third exhaust passage 32 is defined as the intermediate space S. M This is how it is defined.

[0036] In the process of depositing an organic film on a substrate W, the processing space S P The gas supplied inside passes through the first exhaust passage 30 and the intermediate space S. M , and exhaust space S via the third exhaust passage 32 E The exhaust is directed to the lower space S. L The purge gas supplied to the second exhaust passage 31 and the intermediate space S M , and exhaust space S via the third exhaust passage 32 E It is exhausted to [location].

[0037] Furthermore, the distance between the lower surface of the shower head 230 and the upper surface of the ring cover 251 is much shorter than the distance between the lower surface of the shower head 230 and the upper surface of the substrate W placed on the stage 211. Therefore, the conductance of the first exhaust passage 30 is within the processing space S P It is smaller than the conductance of the processing space S. In this embodiment, the conductance of the second exhaust passage 31 is also smaller than that of the processing space S. P It is smaller than the conductance of [the other component].

[0038] The relationship between the conductances of these spaces can be illustrated as shown in Figure 3, for example. Figure 3 is a diagram illustrating an example of the relationship between the conductances of each space in the first embodiment. In the example in Figure 3, the thickness of each part represents the magnitude of the conductance. For example, as shown in Figure 3, the processing space S P and intermediate space S M This refers to the processing space S P It is connected via a first exhaust passage 30 which has a smaller conductance than the lower space S L and intermediate space SM This refers to the processing space S P It is connected via a second exhaust passage 31, which has a smaller conductance than the first one. Also, the intermediate space S M and exhaust space S E This refers to the processing space S P It is connected via a third exhaust passage 32, which has a lower conductance.

[0039] Here, let's consider the case where the structure near the periphery of stage 211 is, for example, as shown in Figure 4. Figure 4 is an enlarged cross-sectional view showing an example of the structure near the periphery of stage 211 in the comparative example. The comparative example illustrated in Figure 4 does not have a ring cover 251. Therefore, in the comparative example, the processing space S P The conductance of the showerhead 230 and the conductance of the exhaust passage 33 between the bottom surface of the showerhead 230 and the top surface of the stage cover 250 are approximately the same.

[0040] Figure 5 illustrates, for example, the relationship between the conductances of each space in the comparative example. Figure 5 is a diagram illustrating an example of the relationship between the conductances of each space in the comparative example. In the comparative example, the ring cover 251 is not provided. Therefore, in the comparative example, when the film deposition process is performed, the processing space S is accessed via the exhaust passage 33. P From intermediate space S M A large amount of film-forming gas flows into the interior. This causes the intermediate space S M The partial pressure of the film-forming gas inside increases. Therefore, the intermediate space S M , third exhaust passage 32, and exhaust space S E A highly concentrated film-forming gas flows through the interior, creating an intermediate space S. M , third exhaust passage 32, and exhaust space S E Organic films are more likely to form as deposits on the side walls. Intermediate space S M , third exhaust passage 32, and exhaust space S E If there are areas within the sidewall that are difficult to heat sufficiently to inhibit the formation of the organic film, the film formation process must be stopped, and those areas must be cleaned frequently.

[0041] Furthermore, in the comparative example, the intermediate space S M To lower the partial pressure of the film-forming gas inside, the lower space S L One possible solution is to increase the flow rate of the purge gas supplied to the intermediate space S. M The amount of purge gas supplied to the interior increases, creating an intermediate space S M The partial pressure of the film-forming gas inside can be reduced. However, in the comparative example, the conductance of the exhaust passage 33 is large, so the intermediate space S M The purge gas supplied inside passes through the exhaust passage 33 into the processing space S P It easily flows into the interior. Purge gas in the processing space S P When it flows into the processing space S P The concentration of the film-forming gas decreases. Processing space S P When the concentration of the film-forming gas decreases, the film-forming rate decreases, and the throughput of the film-forming process decreases.

[0042] In contrast, in this embodiment, as shown in Figure 3, for example, the processing space S is accessed via the first exhaust passage 30 with low conductance. P and intermediate space S M They are connected. Therefore, the lower space S L The purge gas supplied to the intermediate space S passes through the first exhaust passage 30. M Processing space S from within P The amount of water flowing into the interior can be kept low. Therefore, the lower space S L Even if the flow rate of the purge gas supplied to the processing space S is increased, P This allows for a low inflow rate of purge gas into the device, thereby preventing a decrease in the rate of organic film deposition.

[0043] Furthermore, while suppressing the decrease in the rate of organic film deposition, the lower space S L The flow rate of the purge gas supplied to the intermediate space S can be increased, M This allows the partial pressure of the film-forming gas inside to be reduced. This reduces the intermediate space S M , third exhaust passage 32, and exhaust space S E The concentration of the film-forming gas flowing inside can be reduced, creating an intermediate space S M , third exhaust passage 32, and exhaust space SE This can suppress the adhesion of organic films to the side walls. As a result, the frequency of cleaning can be reduced, and the throughput of the film deposition process can be improved.

[0044] [Experimental Results] Figure 6 shows an example of the film thickness distribution of the organic film when the purge gas flow rate is changed in the first embodiment. In Figure 6, "Average" represents the average film thickness of the organic film formed on the substrate W, "D / R" is the deposition rate, "Max" is the maximum film thickness, "Min" is the minimum film thickness, and "Range" represents the difference between the maximum and minimum film thicknesses. "WiW±" represents the value obtained by dividing the percentage of Range relative to the average film thickness by half, and "WiW1σ" represents the percentage of the standard deviation relative to the average film thickness. For example, as shown in Figure 6, when the purge gas flow rate is increased to 1600 sccm, the deposition rate (D / R) changes somewhat. However, the decrease in the deposition rate when the purge gas flow rate is 1600 sccm is kept within 30% compared to the deposition rate when the purge gas flow rate is 100 sccm.

[0045] Furthermore, if the purge gas flow rate is 100 sccm, the exhaust space S E The partial pressure of the film-forming gas is 250 mTorr, and the flow rate of the purge gas is 1600 sccm, and the exhaust space S E The partial pressure of the film-forming gas in the area was 50 mTorr. That is, when the flow rate of the purge gas was increased to 1600 sccm, the exhaust space S E The partial pressure of the film-forming gas in the field could be reduced to less than 20% compared to when the purge gas flow rate was 100 sccm. As a result, the exhaust space S E This can suppress the formation of organic films and significantly reduce the frequency of cleaning.

[0046] [Actions during cleaning] Figure 7 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage 211 during cleaning in the first embodiment. In order to suppress the adhesion of the organic film to parts other than the substrate W during the film deposition process, parts other than the substrate W are heated or the film deposition gas supplied to parts other than the substrate W is diluted, but it is difficult to completely eliminate the adhesion of the organic film to parts other than the substrate W. Therefore, if the film deposition process is repeated, the organic film may adhere to parts other than the substrate W. For this reason, cleaning of the processing container 209 is performed before the organic film attached to parts other than the substrate W becomes particles and scatters into the processing container 209.

[0047] In this embodiment, cleaning inside the processing container 209 is performed with the stage 211 lowered by driving the lifting mechanism 240. As the stage 211 lowers from its position during the film formation process, the ring cover 251 lowers together with the stage 211, and as shown in Figure 7, for example, the ring cover 251 is transferred from the upper surface of the stage cover 250 to the upper surface of the exhaust blade 2521. As a result, the space between the lower surface of the shower head 230 and the upper surface of the ring cover 251 expands into the first exhaust passage 30', and the conductance of the first exhaust passage 30' increases. This expands the processing space S P The active species of the plasma-generated cleaning gas inside the intermediate space S via the first exhaust passage 30' M It diffuses easily into the interior. This causes the intermediate space S M It can efficiently remove organic films that have adhered to walls and other surfaces.

[0048] Furthermore, as the stage 211 descends and the ring cover 251 is transferred from the upper surface of the stage cover 250 to the upper surface of the exhaust blade 2521, the lower surface of the ring cover 251 and the upper surface of the stage cover 250 are separated, as shown in Figure 7, for example. This creates a gap in the processing space S P The active species of the cleaning gas, which is plasma-generated inside the device, can efficiently remove organic films attached to the lower surface of the ring cover 251 and organic films attached to the upper surface of the stage cover 250.

[0049] The first embodiment has been described above. As described above, the substrate processing apparatus 10 in this embodiment comprises a processing container 209, a stage 211, and an exhaust space S E It includes a first exhaust passage 30 and a second exhaust passage 31. The stage 211 is located inside the processing container 209 and the substrate W is placed on it. Exhaust space S E The first exhaust passage 30 is located around the stage 211, along the inner wall of the processing container 209. P and exhaust space S E A processing space S is provided between them. P The conductance is smaller than that. The second exhaust passage 31 is located in the lower space S below the stage 211. L and exhaust space S E A processing space S is provided between them. P The conductance is smaller than that of the processing space S. P The processed gas supplied inside is exhausted through the first exhaust passage 30 into the lower space S L The purge gas supplied inside is exhausted through the second exhaust passage 31. Furthermore, the second exhaust passage 31 has a larger exhaust space S than the first exhaust passage 30. E It is connected to the space on the side. This allows for the processing space S P By keeping the amount of purge gas flowing into the device low, the decrease in the rate of organic film deposition can be suppressed. This improves the throughput in the film deposition process.

[0050] Furthermore, in the embodiment described above, the first exhaust passage 30 is the space between a ring cover 251 positioned on an annular stage cover 250 provided on the periphery of the upper surface of the stage 211, and the lower surface of a shower head 230 positioned above the stage 211 and supplying gas into the processing container 209. The second exhaust passage 31 is the space between an annular exhaust blade 2501 provided on the stage cover 250 and an annular exhaust blade 2521 provided on the side wall of the processing container 209. This makes it easy to form the first exhaust passage 30 and the second exhaust passage 31.

[0051] In the above-described embodiment, the substrate processing apparatus 10 includes a lifting mechanism 240 that moves the stage 211 up and down. When cleaning is performed in the processing chamber 209, the valve 2240 raises the conductance of the first exhaust passage 30 by lowering the stage 211. Further, when the stage 211 descends, the ring cover 251 is transferred from the stage cover 250 to the exhaust blade 2521. Thereby, the organic film adhering to the lower surface of the ring cover 251 and the organic film adhering to the upper surface of the stage cover 250 can be efficiently removed.

[0052] In the above-described embodiment, the shower head 230 supplies a first processing gas containing a first monomer and a second processing gas containing a second monomer into the processing chamber 209 from different discharge ports 232a and 232b, respectively, to form a film of a polymer of the first monomer and the second monomer on the substrate W placed on the stage 211. The first monomer is, for example, isocyanate, the second monomer is, for example, amine, and the polymer formed on the substrate W contains a urea bond. The film thickness of the polymer formed on the substrate W is affected by the concentrations of the gas of the first monomer and the gas of the second monomer on the substrate W. In the present embodiment, since the decrease in the concentrations of the gas of the first monomer and the gas of the second monomer in the processing space S P can be suppressed, the decrease in the film formation rate of the polymer film formed on the substrate W can be suppressed.

[0053] (Second Embodiment) In the first embodiment, the processing space S P and the intermediate space S M communicate with each other via the first exhaust passage 30, the lower space S L and the intermediate space S M communicate with each other via the second exhaust passage 31, and the intermediate space S M and the exhaust space S E communicate with each other via the third exhaust passage 32. In contrast, in the second embodiment, the processing space S P and the exhaust space S Eis connected, and through the second exhaust passage 31 to the lower space S L and the exhaust space S ME The point where they are connected is different from the first embodiment. Below, the description will be centered on the points that are different from the first embodiment.

[0054] FIG. 8 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the second embodiment. In this embodiment, a stage cover 250 is not arranged at the periphery of the upper surface of the stage 211, and a ring cover 251 is arranged at the periphery of the upper surface of the stage 211. An annular ridge 2510 standing in a direction intersecting the upper surface of the stage 211 is formed on the ring cover 251 in this embodiment. In this embodiment, the space between the lower surface of the shower head 230 and the upper surface of the ring cover 251, and the space between the side surface of the shower head 230 and the side surface of the ridge 2510 are defined as the first exhaust passage 30.

[0055] The conductance of the first exhaust passage 30 is smaller than the conductance of the processing space S P . In the example of FIG. 8, the ridge 2510 is formed on the ring cover 251. However, similar to the ring cover 251 in the first embodiment, the ridge 2510 may not be provided on the ring cover 251. Even in this case, the conductance of the first exhaust passage 30 can be made smaller than the conductance of the processing space S P .

[0056] Also, in the example of FIG. 8, a stage cover 250 having no exhaust blade 2501 is arranged at the periphery of the upper surface of the stage 211, and a ring cover 251 is arranged on the stage cover 250. However, the disclosed technology is not limited to this. In this embodiment, a stage cover 250 having no exhaust blade 2501 may be arranged at the periphery of the upper surface of the stage 211, and a ring cover 251 may be arranged on the stage cover 250.

[0057] In this embodiment, an annular exhaust blade 253 is provided along the exhaust duct 202. The cross-sectional shape of the exhaust blade 253 is such that it extends away from the side wall of the lower container 201 and hangs downward along the side wall of the lower container 201, as shown in Figure 8, for example. In this embodiment, the space between the side surface of the stage 211 and the side surface of the exhaust blade 253 is defined as the second exhaust passage 31. In this embodiment, the exhaust duct 202 is not provided with a duct cover 252. Also, the exhaust blade 253 does not need to have a portion that hangs downward along the side wall of the lower container 201, as long as its cross-sectional shape extends away from the lower container 201. The exhaust blade 253 is an example of a second exhaust blade.

[0058] Processing space S P , lower space S L Exhaust space S E The relationship between the conductances of the first exhaust passage 30 and the second exhaust passage 31 is illustrated as shown in Figure 9, for example. Figure 9 is a diagram illustrating an example of the relationship between the conductances of each space in the second embodiment. In the example in Figure 9, the thickness of each part represents the magnitude of the conductance. In the process of forming an organic film on a substrate W, the processing space S P The film-forming gas supplied inside passes through the first exhaust passage 30 into the exhaust space S E The exhaust is directed to the lower space S L The purge gas supplied to the exhaust space S is released through the second exhaust passage 31. E It is exhausted to [location].

[0059] In this embodiment, for example, as shown in Figure 9, the processing space S is accessed via the first exhaust passage 30 with low conductance. P and exhaust space S E They are connected. Therefore, the lower space S L The purge gas supplied to the exhaust space S is discharged through the first exhaust passage 30. E Processing space S from within P The amount of water flowing into the interior can be kept low. Therefore, the lower space S L Even if the flow rate of the purge gas supplied to the processing space S is increased, PThis allows for a low inflow rate of purge gas into the device, thereby preventing a decrease in the rate of organic film deposition.

[0060] Furthermore, while suppressing the decrease in the rate of organic film deposition, the lower space S L This allows for an increase in the flow rate of purge gas supplied to the exhaust space S. E This allows the partial pressure of the film-forming gas inside to be reduced. E The concentration of the film-forming gas flowing inside can be reduced, and the exhaust space S E This can suppress the adhesion of organic films to the side walls. As a result, the frequency of cleaning can be reduced, and the throughput of the film deposition process can be improved.

[0061] [Actions during cleaning] Figure 10 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage 211 during cleaning in the second embodiment. In this embodiment, cleaning inside the processing container 209 is performed with the stage 211 lowered by driving the lifting mechanism 240. As the stage 211 lowers from its position during the film formation process, the ring cover 251 also lowers with the stage 211, and as shown in Figure 10, for example, the ring cover 251 is transferred from the upper surface of the stage 211 to the upper surface of the exhaust blade 253. As a result, the space between the lower surface of the shower head 230 and the upper surface of the ring cover 251, and the space between the side surface of the shower head 230 and the side surface of the protrusion 2510, expand into the first exhaust passage 30'. As a result, the conductance of the first exhaust passage 30' increases, and the processing space S P The active species of the plasma-generated cleaning gas inside the first exhaust passage 30' enter the exhaust space S E It easily diffuses into the interior. This causes the exhaust space S E It can efficiently remove organic films that have adhered to walls and other surfaces.

[0062] Furthermore, as the stage 211 descends and the ring cover 251 is transferred from the upper surface of the stage 211 to the upper surface of the exhaust blade 253, the lower surface of the ring cover 251 and the upper surface of the stage 211 are separated, as shown in Figure 10, for example. This creates a processing space S P The active species of the cleaning gas, which is plasma-generated inside the device, can efficiently remove organic films attached to the lower surface of the ring cover 251 and organic films attached to the upper surface of the stage 211.

[0063] Furthermore, as the stage 211 descends, the stage 211 and the exhaust blade 253 separate, and the space between the stage 211 and the exhaust blade 253 expands into the second exhaust passage 31'. As a result, the conductance of the second exhaust passage 31' increases, and the processing space S P The active species of the plasma-generated cleaning gas inside the second exhaust passage 31' enter the lower space S L It easily diffuses inward. This causes the lower space S L It can efficiently remove organic films that have adhered to walls and other surfaces.

[0064] In the example shown in Figure 8, an annular exhaust blade 253 is provided along the exhaust duct 202, but the disclosed technology is not limited to this. In the lower container 201, as shown in Figure 11, for example, a lower space S is provided below the exhaust duct 202, along the side wall of the lower container 201. L An annular shelf portion 2010 protruding in that direction may be formed. In this case, the space between the side wall of the shelf portion 2010 and the side wall of the stage 211 corresponds to the second exhaust passage 31.

[0065] The second embodiment has been described above. As described above, the substrate processing apparatus 10 in this embodiment is an annular ring cover 251 disposed on the periphery of the upper surface of the stage 211, and further comprises an annular projection 2510 erected in a direction intersecting the upper surface of the stage 211. The first exhaust passage 30 is at least one of the spaces between the upper surface of the ring cover 251 and the lower surface of the shower head 230 disposed above the stage 211, and the space between the side surface of the projection 2510 of the ring cover 251 and the side surface of the shower head 230. The second exhaust passage 31 is the space between the side surface of the stage 211 and an annular exhaust blade 253 provided on the side wall of the lower container 201. This makes it easy to form the first exhaust passage 30 and the second exhaust passage 31.

[0066] Furthermore, in the embodiment described above, the substrate processing apparatus 10 is equipped with a lifting mechanism 240 for moving the stage 211 up and down. The lifting mechanism 240 increases the conductance of the first exhaust passage 30 and the second exhaust passage 31 by lowering the stage 211 when cleaning is performed inside the processing container 209. The ring cover 251 is transferred to a shelf 2010 provided on the inner wall of the processing container 209 as the stage 211 is lowered. This creates an exhaust space S E and lower space S L It can efficiently remove organic films that have adhered to walls and other surfaces.

[0067] (Third embodiment) In the first embodiment, a plate-shaped ring cover 251 was positioned on the stage cover 250 so as to extend along the upper surface of the stage 211. In contrast, the third embodiment differs from the first embodiment in that a cylindrical ring cover 251 is fixed to the outer wall of the shower head 230 so as to surround the shower head 230. The following description will focus on the differences from the first embodiment.

[0068] Figure 12 is an enlarged cross-sectional view showing an example of the structure near the periphery of the stage 211 in the third embodiment. In this embodiment, for example, as shown in Figure 12, a cylindrical ring cover 251 is fixed to the outer wall of the shower head 230 so as to surround the shower head 230. In this embodiment, the space between the side surface of the stage cover 250 provided on the stage 211 and the side surface of the ring cover 251 is defined as the first exhaust passage 30. The conductance of the first exhaust passage 30 is the processing space S P It is smaller than the conductance of [the other component].

[0069] In this embodiment, an annular exhaust blade 253 is provided along the exhaust duct 202. The exhaust blade 253 is an example of a second exhaust blade. The cross-sectional shape of the exhaust blade 253 is such that it extends away from the side wall of the lower container 201 and hangs downward along the side wall of the lower container 201, as shown in Figure 12, for example. In the process of forming an organic film on the substrate W, the exhaust blade 2501 of the stage cover 250 is positioned between the exhaust blade 253 and the side wall of the lower container 201, as shown in Figure 12, for example. Gaps are provided between the exhaust blade 253 and the exhaust blade 2501, and between the exhaust blade 2501 and the side wall of the lower container 201. In this embodiment, the space between the lower container 201 and the exhaust blade 2501, and the space between the exhaust blade 253 and the exhaust blade 2501 are defined as the second exhaust passage 31.

[0070] Furthermore, in this embodiment, the conductance of the space between the ring cover 251 and the exhaust blade 253 is the processing space S P It is greater than the conductance of the processing space S. P , lower space S L Exhaust space S E The relationship between the conductances of the first exhaust passage 30 and the second exhaust passage 31 is, for example, the same as in Figure 9. In the process of forming an organic film on a substrate W, the processing space S P The gas supplied inside passes through the first exhaust passage 30 into the exhaust space S E The exhaust is directed to the lower space S LThe purge gas supplied to the exhaust space S is released through the second exhaust passage 31. E It is exhausted to [location].

[0071] In this embodiment as well, for example as shown in Figure 9, the processing space S is accessed via the first exhaust passage 30 with low conductance. P and exhaust space S E They are connected. Therefore, the lower space S L The purge gas supplied to the exhaust space S is discharged through the first exhaust passage 30. E Processing space S from within P The amount of water flowing into the interior can be kept low. Therefore, the lower space S L Even if the flow rate of the purge gas supplied to the processing space S is increased, P This allows for a low inflow rate of purge gas into the device, thereby preventing a decrease in the rate of organic film deposition.

[0072] Furthermore, while suppressing the decrease in the rate of organic film deposition, the lower space S L This allows for an increase in the flow rate of purge gas supplied to the exhaust space S. E This allows the partial pressure of the film-forming gas inside to be reduced. E The concentration of the film-forming gas flowing inside can be reduced, and the exhaust space S E This can suppress the adhesion of organic films to the side walls. As a result, the frequency of cleaning can be reduced, and the throughput of the film deposition process can be improved.

[0073] [Actions during cleaning] Figure 13 is an enlarged cross-sectional view showing an example of the state near the periphery of the stage 211 during cleaning in the third embodiment. In this embodiment, cleaning inside the processing container 209 is performed with the stage 211 lowered by driving the lifting mechanism 240. As the stage 211 lowers from its position during the film formation process, the stage 211 and the ring cover 251 fixed to the side wall of the shower head 230 separate, as shown in Figure 13, for example. This widens the space between the side of the stage 211 and the side of the ring cover 251 into the first exhaust passage 30'. This increases the conductance of the first exhaust passage 30', and the processing space S P The active species of the plasma-generated cleaning gas inside the first exhaust passage 30' enter the exhaust space S E It easily diffuses into the interior. This causes the exhaust space S E It can efficiently remove organic films that have adhered to walls and other surfaces.

[0074] As another example of the third embodiment, as shown in Figure 14, for example, instead of the exhaust blade 253, below the exhaust duct 202, along the side wall of the lower container 201, the lower space S L An annular shelf portion 2010 protruding in that direction may be formed. In this case, the space between the side surface of the shelf portion 2010 and the exhaust blade 2501 corresponds to the second exhaust passage 31. Even in such a configuration, the lower space S L The purge gas supplied to the exhaust space S is discharged through the first exhaust passage 30. E Processing space S from within P The amount of air flowing into the interior can be kept low, and the exhaust space S E This allows for a reduction in the concentration of the film-forming gas flowing inside.

[0075] Furthermore, during cleaning, the stage 211 descends from its position during the film deposition process, causing the stage 211 to separate from the ring cover 251 fixed to the side wall of the shower head 230, as shown in Figure 15, for example. This expands the space between the side of the stage 211 and the side of the ring cover 251 into the first exhaust passage 30', increasing the conductance of the first exhaust passage 30'. This expands the processing space S P The active species of the plasma-generated cleaning gas inside the first exhaust passage 30' enter the exhaust space S E It easily diffuses into the exhaust space S E It can efficiently remove organic films that have adhered to walls and other surfaces.

[0076] Furthermore, as the stage 211 descends, the stage 211 and the exhaust blade 2501 separate, and the space between the stage 211 and the exhaust blade 2501 expands into the second exhaust passage 31'. As a result, the conductance of the second exhaust passage 31' increases, and the processing space S P The active species of the plasma-generated cleaning gas inside the second exhaust passage 31' enter the lower space S L It easily diffuses inward. This causes the lower space S L It can efficiently remove organic films that have adhered to walls and other surfaces.

[0077] Furthermore, in the example shown in Figure 12, the conductance of the space between the ring cover 251 and the exhaust blade 253 is the processing space S P Although greater than the conductance of the processing space S, the techniques disclosed are not limited to this. As another example, as shown in Figure 16, for example, the conductance of the space between the ring cover 251 and the exhaust blade 253 is greater than that of the processing space S P It may be configured to be smaller than the conductance of the other component. The space between the ring cover 251 and the exhaust blade 253 is defined as the fourth exhaust passage 34.

[0078] In the example in Figure 16, the processing space S P , lower space S L Exhaust space S EThe relationship between the conductances of the first exhaust passage 30, the second exhaust passage 31, and the fourth exhaust passage 34 is as shown in Figure 17, for example. In this embodiment, the second exhaust passage 31 is connected to the first exhaust passage 30, as shown in Figure 17, for example. In the process of forming an organic film on a substrate W, the processing space S P The gas supplied inside flows through the first exhaust passage 30 to the fourth exhaust passage 34, into the lower space S L The purge gas supplied to flows through the second exhaust passage 31 to the fourth exhaust passage 34. The gas flowing through the fourth exhaust passage 34 then flows into the exhaust space S E It is exhausted to [location].

[0079] The third embodiment has been described above. As described above, the substrate processing apparatus 10 in this embodiment includes a cylindrical ring cover 251 provided on the side wall of the shower head 230 so as to surround the shower head 230. The first exhaust passage 30 in this embodiment is the space between the side surface of the annular stage cover 250 provided on the periphery of the upper surface of the stage 211 and the side surface of the ring cover 251. The second exhaust passage 31 in this embodiment is the space between the annular exhaust blade 2501 provided on the stage cover 250 and the annular exhaust blade 253 provided on the side wall of the processing container 209. This makes it easy to form the first exhaust passage 30 and the second exhaust passage 31.

[0080] Furthermore, in the above-described embodiment, the substrate processing apparatus 10 is equipped with a lifting mechanism 240 for moving the stage 211 up and down. Also in this embodiment, the conductance of the space between the side surface of the ring cover 251 and the exhaust blade 253 is greater than the conductance of either the first exhaust passage 30 or the second exhaust passage 31. When cleaning is performed inside the processing container 209, the lifting mechanism 240 lowers the stage 211, thereby increasing the conductance of the first exhaust passage 30. As a result, during cleaning, the exhaust space S E It can efficiently remove organic films that have adhered to walls and other surfaces.

[0081] [others] Furthermore, the technology disclosed in this application is not limited to the embodiments described above, and numerous modifications are possible within the scope of its essence.

[0082] For example, in the above-described embodiment, an isocyanate was used as the first monomer and an amine as the second monomer to form a polymer film having a urea bond (-NH-CO-NH-) on the surface of the substrate W, but the disclosed technology is not limited thereto. For example, an epoxide may be used as the first monomer and an amine as the second monomer to form a polymer film having a 2-aminoethanol bond (-NH-CH2-CH(OH)-) on the surface of the substrate W. Alternatively, an isocyanate may be used as the first monomer and an alcohol as the second monomer to form a polymer film having a urethane bond (-NH-CO-O-) on the surface of the substrate W. Alternatively, an acyl halide may be used as the first monomer and an amine as the second monomer to form a polymer film having an amide bond (-NH-CO-) on the surface of the substrate W. Alternatively, a carboxylic acid anhydride may be used as the first monomer and an amine as the second monomer to form a polymer film having an imide bond (-CO-N(-)-CO-) on the surface of the substrate W.

[0083] When a polymer film having imide bonds is formed on the surface of the substrate W, for example, pyromellitic dianhydride (PMDA) can be used as the first monomer. Furthermore, when a polymer film having imide bonds is formed on the surface of the substrate W, for example, 4,4'-oxydianiline (44ODA) or hexamethylenediamine (HMDA) can be used as the second monomer.

[0084] Furthermore, although the above-described embodiment uses a film deposition apparatus as an example of a substrate processing apparatus 10, the disclosed technology is not limited to this. The disclosed technology can also be applied to apparatuses other than film deposition apparatuses, such as etching apparatuses or substrate modification apparatuses, as long as the distribution of gas in the processing container 209 affects the quality of processing on the substrate W.

[0085] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of Symbols]

[0086] G Gate Valve W board 10 Substrate Processing Equipment 100 Control device 200 Main unit of the device 201 Lower container 2010 Shelf 202 Exhaust duct 204 Insulating material 205 Opening 206 Exhaust pipe 207 Pressure regulating valve 208 Exhaust System 209 Processing container 210 Support structure 211 Stages 212 Support part 214 Heater 215 channel 216 Piping 220 Gas Supply Department 221a Raw material source 221b Raw material source 221c Cleaning gas supply source 221d Purge gas supply source 222 Vaporizer 223 MFC 224 valves 225 Piping 230 shower head 231 Diffusion Chamber 232 Discharge port 240 Lifting mechanism 250 Stage Cover 2501 Exhaust Blade 251 Ring Cover 2510 Projection 252 Duct Cover 2520 Exhaust port 2521 Exhaust Blade 253 Exhaust Blade 260 RF power supply 261 Matching box 30 First exhaust passage 31 Second exhaust passage 32 Third exhaust passage 33 Exhaust passage 34. Fourth exhaust passage

Claims

1. Processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, an exhaust space is arranged around the stage, A first exhaust passage is provided between the processing space above the stage and the exhaust space, and has a smaller conductance than the processing space. A second exhaust passage is provided between the lower space below the stage and the exhaust space, and has a smaller conductance than the processing space. An annular ring cover disposed on the periphery of the upper surface of the stage, the ring cover having an annular projection erected in a direction intersecting the upper surface of the stage Equipped with, The processing gas supplied into the processing space is exhausted through the first exhaust passage. The purge gas supplied into the lower space is exhausted through the second exhaust passage. The second exhaust passage is connected to the first exhaust passage or to a space on the exhaust space side of the first exhaust passage. The first exhaust passage is, The space is the space between the upper surface of the ring cover and the lower surface of the shower head which is positioned above the stage and supplies gas into the processing container, and the space between the side surface of the protrusion of the ring cover and the side surface of the shower head. The second exhaust passage is, A substrate processing apparatus, the space between the side surface of the stage and an annular exhaust blade provided on the side wall of the processing container.

2. The stage is further equipped with a drive unit for moving it up and down. The aforementioned drive unit is When cleaning is performed inside the processing container, the stage is lowered to increase the conductance of the first exhaust passage and the second exhaust passage. The aforementioned ring cover is The substrate processing apparatus according to claim 1, wherein the stage is lowered and transferred to a shelf provided on the inner wall of the processing container.

3. A processing container and A stage is provided inside the processing container on which the substrate is placed, Along the inner wall of the processing container, an exhaust space is arranged around the stage, A first exhaust passage is provided between the processing space above the stage and the exhaust space, and has a smaller conductance than the processing space. A second exhaust passage is provided between the lower space below the stage and the exhaust space, and has a smaller conductance than the processing space. A cylindrical ring cover is provided on the side wall of the shower head so as to surround the shower head, which is positioned above the stage and supplies gas into the processing container, and Equipped with, The processing gas supplied into the processing space is exhausted through the first exhaust passage. The purge gas supplied into the lower space is exhausted through the second exhaust passage. The second exhaust passage is connected to the first exhaust passage or to a space on the exhaust space side of the first exhaust passage. The first exhaust passage is, This is the space between the side surface of the annular stage cover and the side surface of the ring cover, which are provided on the periphery of the upper surface of the stage. The second exhaust passage is, A substrate processing apparatus, the space between an annular first exhaust blade provided on the stage cover and an annular second exhaust blade provided on the side wall of the processing container.

4. The stage is further equipped with a drive unit for moving it up and down. The conductance of the space between the side surface of the ring cover and the second exhaust blade is greater than the conductance of the first exhaust passage and the conductance of the second exhaust passage. The aforementioned drive unit is The substrate processing apparatus according to claim 3, wherein the conductance of the first exhaust passage is increased by lowering the stage when cleaning is performed inside the processing container.

5. A substrate processing apparatus according to any one of claims 1 to 4, further comprising a gas supply unit that, with the substrate placed on the stage, supplies a first processing gas containing a first monomer and a second processing gas containing a second monomer into the processing space from different outlets of the shower head via a shower head positioned above the stage, thereby forming a polymer film of the first monomer and the second monomer on the substrate.

6. The first monomer is an isocyanate, The second monomer is an amine, The substrate processing apparatus according to claim 5, wherein the polymer formed on the substrate contains a urea bond.

7. The first monomer is a carboxylic acid anhydride, The second monomer is an amine, The substrate processing apparatus according to claim 5, wherein the polymer formed on the substrate includes an imide bond.

8. The first monomer is an epoxide, The second monomer is an amine, The substrate processing apparatus according to claim 5, wherein the polymer formed on the substrate contains a 2-aminoethanol bond.

9. The first monomer is an isocyanate, The second monomer is an alcohol, The substrate processing apparatus according to claim 5, wherein the polymer formed on the substrate includes a urethane bond.

10. The first monomer is an acyl halogenate, The second monomer is an amine, The substrate processing apparatus according to claim 5, wherein the polymer formed on the substrate includes an amide bond.

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