sensor

Abstract

To realize a sensor capable of increasing accuracy of a shape of a sensor element formed on an inclined surface.SOLUTION: A magnetic sensor 1 includes an insulating layer 305 including a flat portion 32 and a protruding portion 31, a first MR element 50B, and a second MR element 50B. The protruding portion 31 has a first inclined surface 305a and a second inclined surface 305c. The first MR element 50B is disposed on the first inclined surface 305a. The second MR element 50C is disposed on the second inclined surface 305b. The protruding portion 31 extends along a U direction, and includes a plurality of recessed portions 31a1, each recessed in a -U direction at an edge of the protruding portion 31 in the U direction.SELECTED DRAWING: Figure 8

Description

Technical Field

[0001] The present invention relates to a sensor in which a sensor element is disposed on an inclined surface.

Background Art

[0002] In recent years, magnetic sensors using magnetoresistive effect elements have been used in various applications. In a system including a magnetic sensor, there are cases where it is desired to detect a magnetic field including a component in a direction perpendicular to the surface of a substrate by a magnetoresistive effect element provided on the substrate. In this case, by providing a soft magnetic body that converts a magnetic field in a direction perpendicular to the surface of the substrate into a magnetic field in a direction parallel to the surface of the substrate, or by disposing the magnetoresistive effect element on an inclined surface formed on the substrate, a magnetic field including a component in a direction perpendicular to the surface of the substrate can be detected.

[0003] Patent Document 1 discloses a magnetic sensor in which an X-axis sensor, a Y-axis sensor, and a Z-axis sensor are provided on a substrate. The magnetoresistive effect element constituting the Z-axis sensor is provided on an inclined surface of a protrusion formed in an underlayer film of the substrate. The protrusion is formed by performing dry etching on a thick film made of silicon oxide. The magnetoresistive effect element is formed by etching a multilayer metal thin film formed on the inclined surface of the groove using photolithography.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In magnetic sensors that use magnetoresistive elements tilted relative to the substrate surface, such as the magnetic sensor disclosed in Patent Document 1, it is preferable to form more magnetoresistive elements on the inclined surface in order to increase the sensitivity of the magnetic sensor. The inclined surface has a shape that is elongated in one direction when viewed from above. Magnetoresistive elements are also formed near the edges of the inclined surface. However, near the edges of the inclined surface, the photoresist used to form the photoresist mask used for etching may flow, making it difficult to accurately form metal films such as electrodes or magnetoresistive elements.

[0006] The above problem applies not only to magnetic sensors but to all sensors in general where the sensor element is formed on an inclined surface.

[0007] This invention has been made in view of the above problems, and its objective is to provide a sensor that can improve the accuracy of the shape of a sensor element formed on an inclined surface. [Means for solving the problem]

[0008] The sensor of the present invention is a sensor configured to detect a predetermined physical quantity. The sensor of the present invention comprises a substrate having an upper surface, a support member disposed on the substrate, and a sensor element configured to change its physical properties according to a predetermined physical quantity. The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate, and at least one protruding portion having a shape that protrudes from the flat surface. The at least one protruding portion has an inclined surface that is inclined with respect to the upper surface of the substrate. The sensor element includes a functional layer that constitutes at least a part of the sensor element. The functional layer is disposed on the inclined surface. The at least one protruding portion extends along a first direction parallel to the upper surface of the substrate and includes a plurality of recesses at the end of the at least one protruding portion in the first direction, each recessed in a direction parallel to the upper surface of the substrate. [Effects of the Invention]

[0009] In the sensor of the present invention, at least one protrusion includes a plurality of recesses. This provides the effect that the accuracy of the shape of the sensor element formed on an inclined surface can be improved according to the present invention. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view showing a magnetic sensor according to the first embodiment of the present invention. [Figure 2] This is a functional block diagram showing the configuration of a magnetic sensor device including a magnetic sensor according to the first embodiment of the present invention. [Figure 3] This is a circuit diagram showing the circuit configuration of the first detection circuit in the first embodiment of the present invention. [Figure 4] This is a circuit diagram showing the circuit configuration of the second detection circuit in the first embodiment of the present invention. [Figure 5] This is a plan view showing a part of a magnetic sensor according to the first embodiment of the present invention. [Figure 6] This is a cross-sectional view showing a part of a magnetic sensor according to the first embodiment of the present invention. [Figure 7] This is a side view showing a magnetoresistive element in the first embodiment of the present invention. [Figure 8] This is a plan view showing a support member in the first embodiment of the present invention. [Figure 9] This is a cross-sectional view showing the first and second portions of the protrusion in the first embodiment of the present invention. [Figure 10] This is a cross-sectional view showing the first and third portions of the protrusion in the first embodiment of the present invention. [Figure 11] This is a plan view showing a plurality of recesses in the first embodiment of the present invention. [Figure 12] This is a plan view showing one of the multiple recesses shown in Figure 11. [Figure 13] This is a plan view showing a first modified example of the arrangement of the multiple ends of the multiple protrusions in the first embodiment of the present invention. [Figure 14]It is a plan view showing a second modification of the arrangement of the plurality of ends of the plurality of protruding portions in the first embodiment of the present invention. [Figure 15] It is a plan view showing a modification of the end of the protruding portion in the first embodiment of the present invention. [Figure 16] It is a plan view showing a plurality of recesses in the second embodiment of the present invention.

Embodiments for Carrying Out the Invention

[0011] The embodiments of the present invention described below relate to a sensor configured to detect a predetermined physical quantity. In the embodiments, the sensor includes a sensor element configured such that its physical properties change according to a predetermined physical quantity. For example, the predetermined physical quantity may be at least one of the direction and intensity of a target magnetic field that is the magnetic field of the detection target. In this case, the sensor element may be a magnetic detection element configured to detect at least one of the change in the direction and intensity of the target magnetic field. A sensor provided with a magnetic detection element is also called a magnetic sensor. The magnetic sensor is configured to detect at least one of the direction and intensity of the target magnetic field. Hereinafter, taking the case where the sensor is a magnetic sensor as an example, the embodiments will be described in detail.

[0012] [First Embodiment] First, referring to FIGS. 1 and 2, the configuration of the magnetic sensor according to the first embodiment of the present invention will be described. FIG. 1 is a perspective view showing the magnetic sensor according to the present embodiment. FIG. 2 is a functional block diagram showing the configuration of a magnetic sensor device including the magnetic sensor according to the present embodiment. The magnetic sensor 1 according to the present embodiment corresponds to the "sensor" in the present invention.

[0013] As shown in FIG. 1, the magnetic sensor 1 has the form of a rectangular parallelepiped chip. The magnetic sensor 1 has an upper surface 1a and a lower surface located on opposite sides of each other, and four side surfaces connecting the upper surface 1a and the lower surface. Further, the magnetic sensor 1 has a plurality of electrode pads provided on the upper surface 1a.

[0014] Here, referring to FIG. 1, the reference coordinate system in the present embodiment will be described. The reference coordinate system is a coordinate system based on the magnetic sensor 1 and is an orthogonal coordinate system defined by three axes. In the reference coordinate system, the X direction, the Y direction, and the Z direction are defined. The X direction, the Y direction, and the Z direction are orthogonal to each other. In particular, in the present embodiment, the direction perpendicular to the upper surface 1a of the magnetic sensor 1 and from the lower surface of the magnetic sensor 1 toward the upper surface 1a is defined as the Z direction. Also, the direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The three axes defining the reference coordinate system are an axis parallel to the X direction, an axis parallel to the Y direction, and an axis parallel to the Z direction.

[0015] Hereinafter, a position ahead in the Z direction with respect to the reference position is referred to as "above", and a position on the opposite side of "above" with respect to the reference position is referred to as "below". Also, regarding the components of the magnetic sensor 1, the surface located at the end in the Z direction is referred to as the "upper surface", and the surface located at the end in the -Z direction is referred to as the "lower surface". Also, the expression "when viewed from the Z direction" means viewing the object from a position away in the Z direction.

[0016] As shown in FIG. 2, the magnetic sensor 1 includes a first detection circuit 20 and a second detection circuit 30. Each of the first and second detection circuits 20, 30 includes a plurality of magnetic detection elements and is configured to detect a target magnetic field and generate at least one detection signal. In particular, in the present embodiment, the plurality of magnetic detection elements are a plurality of magnetoresistive effect elements. Hereinafter, the magnetoresistive effect element will be referred to as an MR element.

[0017] Multiple detection signals generated by the first and second detection circuits 20 and 30 are processed by the processor 40. The magnetic sensor 1 and the processor 40 constitute the magnetic sensor device 100. The processor 40 is configured to generate a first detection value and a second detection value that correspond to the components of the magnetic field at a predetermined reference position in two different directions by processing the multiple detection signals generated by the first and second detection circuits 20 and 30. In particular, in this embodiment, the two different directions are one direction parallel to the XY plane and one direction parallel to the Z direction. The processor 40 is configured, for example, by an application-specific integrated circuit (ASIC).

[0018] The processor 40 may be included, for example, in a support that supports the magnetic sensor 1. This support has a plurality of electrode pads. The first and second detection circuits 20, 30 and the processor 40 are connected, for example, via a plurality of electrode pads of the magnetic sensor 1, a plurality of electrode pads of the support, and a plurality of bonding wires. If the plurality of electrode pads of the magnetic sensor 1 are provided on the upper surface 1a of the magnetic sensor 1, the magnetic sensor 1 may be mounted on the upper surface of the support in a orientation where the lower surface of the magnetic sensor 1 faces the upper surface of the support.

[0019] Next, the first and second detection circuits 20 and 30 will be described with reference to Figures 3 to 6. Figure 3 is a circuit diagram showing the circuit configuration of the first detection circuit 20. Figure 4 is a circuit diagram showing the circuit configuration of the second detection circuit 30. Figure 5 is a plan view showing a part of the magnetic sensor 1. Figure 6 is a cross-sectional view showing a part of the magnetic sensor 1.

[0020] Here, as shown in Figure 5, the U and V directions are defined as follows: The U direction is the direction of rotation from the X direction toward the -Y direction. The V direction is the direction of rotation from the Y direction toward the X direction. In this embodiment, the U direction is specifically defined as the direction of rotation by α from the X direction toward the -Y direction, and the V direction is defined as the direction of rotation by α from the Y direction toward the X direction. Note that α is an angle greater than 0° and less than 90°. In one example, α is 45°. Furthermore, the direction opposite to the U direction is defined as the -U direction, and the direction opposite to the V direction is defined as the -V direction.

[0021] Furthermore, as shown in Figure 6, the W1 and W2 directions are defined as follows: The W1 direction is the direction of rotation from the V direction toward the -Z direction. The W2 direction is the direction of rotation from the V direction toward the Z direction. In this embodiment, the W1 direction is specifically defined as the direction of rotation by β from the V direction toward the -Z direction, and the W2 direction is defined as the direction of rotation by β from the V direction toward the Z direction. Note that β is an angle greater than 0° and less than 90°. The direction opposite to the W1 direction is defined as the -W1 direction, and the direction opposite to the W2 direction is defined as the -W2 direction. The W1 and W2 directions are orthogonal to the U direction, respectively.

[0022] The first detection circuit 20 is configured to detect a component of the target magnetic field parallel to the W1 direction and to generate at least one first detection signal corresponding to this component. The second detection circuit 30 is configured to detect a component of the target magnetic field parallel to the W2 direction and to generate at least one second detection signal corresponding to this component.

[0023] As shown in Figure 3, the first detection circuit 20 includes a power supply terminal V2, a ground terminal G2, signal output terminals E21 and E22, a first resistor R21, a second resistor R22, a third resistor R23, and a fourth resistor R24. The multiple MR elements of the first detection circuit 20 constitute the first to fourth resistors R21, R22, R23, and R24.

[0024] The first resistor R21 is located between the power supply terminal V2 and the signal output terminal E21. The second resistor R22 is located between the signal output terminal E21 and the ground terminal G2. The third resistor R23 is located between the signal output terminal E22 and the ground terminal G2. The fourth resistor R24 ​​is located between the power supply terminal V2 and the signal output terminal E22.

[0025] As shown in Figure 4, the second detection circuit 30 includes a power supply terminal V3, a ground terminal G3, signal output terminals E31 and E32, a first resistor R31, a second resistor R32, a third resistor R33, and a fourth resistor R34. The multiple MR elements of the second detection circuit 30 constitute the first to fourth resistors R31, R32, R33, and R34.

[0026] The first resistor R31 is located between the power supply terminal V3 and the signal output terminal E31. The second resistor R32 is located between the signal output terminal E31 and the ground terminal G3. The third resistor R33 is located between the signal output terminal E32 and the ground terminal G3. The fourth resistor R34 is located between the power supply terminal V3 and the signal output terminal E32.

[0027] A predetermined voltage or current is applied to each of the power supply terminals V2 and V3. Each of the ground terminals G2 and G3 is connected to ground.

[0028] Hereinafter, the multiple MR elements of the first detection circuit 20 will be referred to as multiple first MR elements 50B, and the multiple MR elements of the second detection circuit 30 will be referred to as multiple second MR elements 50C. Since the first and second detection circuits 20 and 30 are components of the magnetic sensor 1, it can also be said that the magnetic sensor 1 includes multiple first MR elements 50B and multiple second MR elements 50C. Furthermore, any MR element will be denoted by the reference numeral 50.

[0029] Figure 7 is a side view of the MR element 50. The MR element 50 is a spin valve type MR element. The MR element 50 has a magnetization fixed layer 52 having magnetization with a fixed direction, a free layer 54 having magnetization whose direction can change according to the direction of the target magnetic field, and a gap layer 53 disposed between the magnetization fixed layer 52 and the free layer 54. The MR element 50 may be a TMR (tunnel magnetoresistance) element or a GMR (giant magnetoresistance) element. In a TMR element, the gap layer 53 is a tunnel barrier layer. In a GMR element, the gap layer 53 is a non-magnetic conductive layer. In the MR element 50, the resistance value changes according to the angle that the direction of magnetization of the free layer 54 makes with respect to the direction of magnetization of the magnetization fixed layer 52. The resistance value is at its minimum when this angle is 0° and at its maximum when the angle is 180°. In each MR element 50, the free layer 54 has shape anisotropy such that its easy magnetization axis direction is perpendicular to the magnetization direction of the fixed magnetization layer 52. As a means of setting the easy magnetization axis in a predetermined direction for the free layer 54, a magnet can be used to apply a bias magnetic field to the free layer 54.

[0030] The MR element 50 further includes an antiferromagnetic layer 51. The antiferromagnetic layer 51, magnetization fixed layer 52, gap layer 53, and free layer 54 are stacked in this order. The antiferromagnetic layer 51 is made of an antiferromagnetic material and creates exchange coupling with the magnetization fixed layer 52 to fix the magnetization direction of the magnetization fixed layer 52. The magnetization fixed layer 52 may be a so-called self-pinned fixed layer (Synthetic Ferri Pinned layer, SFP layer). The self-pinned fixed layer has a stacked ferri structure in which a ferromagnetic layer, a non-magnetic intermediate layer, and a ferromagnetic layer are stacked, and the two ferromagnetic layers are antiferromagnetically coupled. If the magnetization fixed layer 52 is a self-pinned fixed layer, the antiferromagnetic layer 51 may be omitted.

[0031] Note that the arrangement of layers 51-54 in the MR element 50 may be reversed vertically from the arrangement shown in Figure 7.

[0032] In Figures 3 and 4, the filled arrows represent the direction of magnetization of the magnetization fixed layer 52 of the MR element 50. The open arrows represent the direction of magnetization of the free layer 54 of the MR element 50 when no target magnetic field is applied to the MR element 50.

[0033] In the example shown in Figure 3, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R21 and R23 is in the W1 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R22 and R24 is in the -W1 direction. Furthermore, each free layer 54 of the multiple first MR elements 50B has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R21 and R22 is in the U direction when no target magnetic field is applied to the first MR element 50B. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R23 and R24 is in the -U direction.

[0034] In the example shown in Figure 4, the magnetization direction of the magnetization fixed layer 52 in each of the first and third resistive sections R31 and R33 is in the W2 direction. The magnetization direction of the magnetization fixed layer 52 in each of the second and fourth resistive sections R32 and R34 is in the -W2 direction. Furthermore, each free layer 54 of the multiple second MR elements 50C has shape anisotropy such that the easy magnetization axis direction is parallel to the U direction. The magnetization direction of the free layer 54 in each of the first and second resistive sections R31 and R32 is in the U direction when no target magnetic field is applied to the second MR element 50C. In the above case, the magnetization direction of the free layer 54 in each of the third and fourth resistive sections R33 and R34 is in the -U direction.

[0035] The magnetic sensor 1 includes a magnetic field generator configured to apply a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50B and multiple second MR elements 50C. In this embodiment, the magnetic field generator includes a coil 80 that applies a magnetic field in a predetermined direction to the free layer 54 of each of the multiple first MR elements 50B and multiple second MR elements 50C.

[0036] Furthermore, the direction of magnetization of the fixed magnetization layer 52 and the direction of the easy magnetization axis of the free layer 54 may be slightly deviated from the above-mentioned direction from the viewpoint of the accuracy of fabrication of the MR element 50. Also, the magnetization of the fixed magnetization layer 52 may be configured to include a magnetization component whose main component is the direction described above. In this case, the direction of magnetization of the fixed magnetization layer 52 will be the direction described above or approximately the direction described above.

[0037] The specific structure of the magnetic sensor 1 will be described in detail below with reference to Figures 5 and 6. Figure 6 shows a portion of the cross-section at the position indicated by line 6-6 in Figure 5.

[0038] The magnetic sensor 1 includes a substrate 301 having an upper surface 301a, insulating layers 302, 303, 304, 305, 306, 307, 308, 309, 310, a plurality of lower electrodes 61B, a plurality of lower electrodes 61C, a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, a plurality of lower coil elements 81, and a plurality of upper coil elements 82. The upper surface 301a of the substrate 301 is assumed to be parallel to the XY plane. The Z direction is also a direction perpendicular to the upper surface 301a of the substrate 301. Note that a coil element is a part of the winding of a coil.

[0039] The insulating layer 302 is placed on the substrate 301. Multiple lower coil elements 81 are placed on the insulating layer 302. The insulating layer 303 is placed on the insulating layer 302 around the multiple lower coil elements 81. Insulating layers 304, 305, and 306 are laminated in this order on the multiple lower coil elements 81 and insulating layer 303.

[0040] Multiple lower electrodes 61B and multiple lower electrodes 61C are arranged on an insulating layer 306. An insulating layer 307 is arranged on the insulating layer 306 around the multiple lower electrodes 61B and multiple lower electrodes 61C. Multiple first MR elements 50B are arranged on multiple lower electrodes 61B. Multiple second MR elements 50C are arranged on multiple lower electrodes 61C. An insulating layer 308 is arranged on the multiple lower electrodes 61B, multiple lower electrodes 61C and insulating layer 307 around the multiple first MR elements 50B and multiple second MR elements 50C. Multiple upper electrodes 62B are arranged on multiple first MR elements 50B and insulating layer 308. Multiple upper electrodes 62C are arranged on multiple second MR elements 50C and insulating layer 308. An insulating layer 309 is arranged on the insulating layer 308 around multiple upper electrodes 62B and multiple upper electrodes 62C.

[0041] The insulating layer 310 is positioned on a plurality of upper electrodes 62B, a plurality of upper electrodes 62C, and an insulating layer 309. A plurality of upper coil elements 82 are positioned on the insulating layer 310. The magnetic sensor 1 may further include an insulating layer (not shown) covering the plurality of upper coil elements 82 and the insulating layer 310.

[0042] The magnetic sensor 1 includes a support member that supports a plurality of first MR elements 50B and a plurality of second MR elements 50C. The support member has at least one inclined surface that is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment in particular, the support member is composed of an insulating layer 305. Figure 5 shows the insulating layer 305, the plurality of first MR elements 50B, the plurality of second MR elements 50C, and the plurality of upper coil elements 82 among the components of the magnetic sensor 1.

[0043] The insulating layer 305 has a plurality of convex surfaces 305c that protrude in the direction away from the upper surface 301a of the substrate 301 (Z direction). Each of the plurality of convex surfaces 305c extends in a direction parallel to the U direction. The overall shape of the convex surface 305c is a semi-cylindrical curved surface formed by moving the curved shape (arch shape) of the convex surface 305c shown in Figure 6 along a direction parallel to the U direction. Furthermore, the plurality of convex surfaces 305c are arranged at predetermined intervals in a direction parallel to the V direction.

[0044] Each of the multiple convex surfaces 305c has an upper end that is furthest from the upper surface 301a of the substrate 301. In this embodiment, the upper end of each of the multiple convex surfaces 305c is assumed to extend in a direction parallel to the U direction. Now, let us focus on any one of the multiple convex surfaces 305c. The convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b. The first inclined surface 305a is the surface of the convex surface 305c that is on the V direction side of the upper end of the convex surface 305c. The second inclined surface 305b is the surface of the convex surface 305c that is on the -V direction side of the upper end of the convex surface 305c. In Figure 5, the boundary between the first inclined surface 305a and the second inclined surface 305b is shown by a dotted line.

[0045] The upper end of the convex surface 305c may be the boundary between the first inclined surface 305a and the second inclined surface 305b. In this case, the dotted line shown in Figure 5 indicates the upper end of the convex surface 305c.

[0046] The upper surface 301a of the substrate 301 is parallel to the XY plane. The first inclined surface 305a and the second inclined surface 305b are each inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane. In a cross section perpendicular to the upper surface 301a of the substrate 301, the distance between the first inclined surface 305a and the second inclined surface 305b decreases as the distance from the upper surface 301a of the substrate 301 increases.

[0047] In this embodiment, since there are multiple convex surfaces 305c, there are also multiple first inclined surfaces 305a and multiple second inclined surfaces 305b. The insulating layer 305 has multiple first inclined surfaces 305a and multiple second inclined surfaces 305b.

[0048] The insulating layer 305 further has flat surfaces 305d surrounding the plurality of convex surfaces 305c. The flat surfaces 305d are parallel to the upper surface 301a of the substrate 301. Each of the plurality of convex surfaces 305c protrudes from the flat surfaces 305d in the Z direction. In this embodiment, the plurality of convex surfaces 305c are arranged with a predetermined interval between them. Therefore, a flat surface 305d exists between two adjacent convex surfaces 305c in the V direction.

[0049] The insulating layer 305 includes a flat portion 32 having a flat surface 305d and at least one protruding portion having a shape that protrudes from the flat surface 305d. In this embodiment, the at least one protruding portion is a plurality of protruding portions 31. Each of the plurality of protruding portions 31 has a shape that protrudes in the Z direction. Each of the plurality of protruding portions 31 extends in a direction parallel to the U direction and has a convex surface 305c. In this embodiment, since each of the first inclined surface 305a and the second inclined surface 305b is part of the convex surface 305c, it can also be said that each of the plurality of protruding portions 31 has both the first inclined surface 305a and the second inclined surface 305b.

[0050] Furthermore, the multiple protrusions 31 are arranged at predetermined intervals in a direction parallel to the V direction. The flat portion 32 is located around the multiple protrusions 31. The thickness (dimension in the Z direction) of the flat portion 32 is substantially constant.

[0051] The insulating layer 304 has a substantially constant thickness (dimension in the Z direction) and is formed along the lower surface of the insulating layer 305. The insulating layer 306 has a substantially constant thickness (dimension in the Z direction) and is formed along the upper surface of the insulating layer 305.

[0052] Multiple lower electrodes 61B are arranged on multiple first inclined surfaces 305a. Multiple lower electrodes 61C are arranged on multiple second inclined surfaces 305b. As described above, since each of the first inclined surface 305a and the second inclined surface 305b is inclined with respect to the upper surface 301a of the substrate 301, i.e., the XY plane, the upper surfaces of each of the multiple lower electrodes 61B and each of the multiple lower electrodes 61C are also inclined with respect to the XY plane. Therefore, it can be said that the multiple first MR elements 50B and the multiple second MR elements 50C are arranged on inclined surfaces that are inclined with respect to the XY plane. The insulating layer 305 is a member for supporting each of the multiple first MR elements 50B and the multiple second MR elements 50C so that they are inclined with respect to the XY plane.

[0053] In this embodiment, the first inclined surface 305a is a curved surface. Therefore, the first MR element 50B curves along the curved surface (first inclined surface 305a). In this embodiment, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the first MR element 50B is defined as a linear direction as described above. The W1 direction and -W1 direction, which are the directions of magnetization of the magnetization fixed layer 52 of the first MR element 50B, are also the directions in which the tangents that are in contact with the portion of the first inclined surface 305a near the first MR element 50B extend.

[0054] Similarly, in this embodiment, the second inclined surface 305b is a curved surface. Therefore, the second MR element 50C curves along the curved surface (second inclined surface 305b). In this embodiment, for convenience, the direction of magnetization of the magnetization fixed layer 52 of the second MR element 50C is defined as a linear direction as described above. The W2 direction and -W2 direction, which are the directions of magnetization of the magnetization fixed layer 52 of the second MR element 50C, are also the directions in which the tangents that are in contact with the portion of the second inclined surface 305b near the second MR element 50C extend.

[0055] As shown in Figure 5, the multiple first MR elements 50B are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple first MR elements 50B are lined up in a row on one first inclined surface 305a. Similarly, the multiple second MR elements 50C are arranged so that multiple elements are lined up in the U direction and multiple elements are lined up in the V direction. Multiple second MR elements 50C are lined up in a row on one second inclined surface 305b. In this embodiment, the rows of multiple first MR elements 50B and rows of multiple second MR elements 50C are arranged alternately in a direction parallel to the V direction.

[0056] Furthermore, an adjacent first MR element 50B and a second MR element 50C may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two first MR elements 50B adjacent to each other with one second MR element 50C in between may or may not be offset in a direction parallel to the U direction when viewed from the Z direction. Also, two second MR elements 50C adjacent to each other with one first MR element 50B in between may or may not be offset in a direction parallel to the U direction when viewed from the Z direction.

[0057] Multiple first MR elements 50B are connected in series by multiple lower electrodes 61B and multiple upper electrodes 62B. The connection method of the multiple first MR elements 50B will now be described in detail with reference to Figure 7. In Figure 7, reference numeral 61 indicates a lower electrode corresponding to any MR element 50, and reference numeral 62 indicates an upper electrode corresponding to any MR element 50. As shown in Figure 7, each lower electrode 61 has an elongated shape. A gap is formed between two adjacent lower electrodes 61 in the longitudinal direction. On the upper surface of the lower electrode 61, MR elements 50 are positioned near both ends in the longitudinal direction. Each upper electrode 62 also has an elongated shape and is positioned on two adjacent lower electrodes 61 in the longitudinal direction to electrically connect two adjacent MR elements 50.

[0058] Although not shown, one MR element 50 located at the end of a row of multiple MR elements 50 arranged in a single line is connected to another MR element 50 located at the end of an adjacent row of multiple MR elements 50 in a direction intersecting the longitudinal direction of the lower electrode 61. These two MR elements 50 are connected to each other by a specific electrode (not shown). This specific electrode may be an electrode connecting the lower surfaces of the two MR elements 50 or the upper surfaces of the two MR elements 50.

[0059] If the MR element 50 shown in Figure 7 is the first MR element 50B, then the lower electrode 61 shown in Figure 7 corresponds to the lower electrode 61B, and the upper electrode 62 shown in Figure 7 corresponds to the upper electrode 62B. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0060] Similarly, multiple second MR elements 50C are connected in series by multiple lower electrodes 61C and multiple upper electrodes 62C. The explanation of the connection method for multiple first MR elements 50B described above also applies to the connection method for multiple second MR elements 50C. When the MR element 50 shown in Figure 7 is a second MR element 50C, the lower electrode 61 shown in Figure 7 corresponds to the lower electrode 61C, and the upper electrode 62 shown in Figure 7 corresponds to the upper electrode 62C. In this case, the longitudinal direction of the lower electrode 61 is parallel to the U direction.

[0061] In this embodiment, a laminated film including an antiferromagnetic layer 51, a magnetization-fixed layer 52, a gap layer 53, and a free layer 54 is described as the MR element 50. However, the MR element in this embodiment may also consist of this laminated film, a lower electrode 61, and an upper electrode 62. The laminated film includes a plurality of magnetic films. The lower electrode 61 is a non-magnetic metal layer disposed between the convex surface 305c and the plurality of magnetic films. The MR element may consist of a plurality of laminated films, a plurality of lower electrodes 61, and a plurality of upper electrodes 62.

[0062] Each of the multiple upper coil elements 82 extends in a direction parallel to the Y direction. Furthermore, the multiple upper coil elements 82 are arranged so as to be aligned in the X direction. In this embodiment in particular, when viewed from the Z direction, two upper coil elements 82 overlap each of the multiple first MR elements 50B and the multiple second MR elements 50C.

[0063] Each of the multiple lower coil elements 81 extends in a direction parallel to the Y direction. Furthermore, the multiple lower coil elements 81 are arranged so as to be aligned in the X direction. The shape and arrangement of the multiple lower coil elements 81 may be the same as or different from the shape and arrangement of the multiple upper coil elements 82. In the examples shown in Figures 5 and 6, the X-direction dimension of each of the multiple lower coil elements 81 is smaller than the X-direction dimension of each of the multiple upper coil elements 82. Also, the distance between two adjacent lower coil elements 81 in the X direction is smaller than the distance between two adjacent upper coil elements 82 in the X direction.

[0064] In the examples shown in Figures 5 and 6, the multiple lower coil elements 81 and the multiple upper coil elements 82 are electrically connected to form a coil 80 that applies a magnetic field parallel to the X direction to the free layers 54 of each of the multiple first MR elements 50B and the multiple second MR elements 50C. The coil 80 may also be configured to apply a magnetic field in the X direction to the free layers 54 of the first and second resistors R21, R22 of the first detection circuit 20 and the first and second resistors R31, R32 of the second detection circuit 30, and to apply a magnetic field in the -X direction to the free layers 54 of the third and fourth resistors R23, R24 of the first detection circuit 20 and the third and fourth resistors R33, R34 of the second detection circuit 30. The coil 80 may also be controlled by the processor 40.

[0065] Next, the first and second detection signals will be described. First, the first detection signal will be described with reference to Figure 3. When the intensity of the component of the target magnetic field parallel to the W1 direction changes, the resistance values ​​of each of the resistors R21 to R24 of the first detection circuit 20 change such that the resistance values ​​of resistors R21 and R23 increase while the resistance values ​​of resistors R22 and R24 decrease, or the resistance values ​​of resistors R21 and R23 decrease while the resistance values ​​of resistors R22 and R24 increase. As a result, the potentials of the signal output terminals E21 and E22 change. The first detection circuit 20 is configured to generate a signal corresponding to the potential of the signal output terminal E21 as the first detection signal S21, and a signal corresponding to the potential of the signal output terminal E22 as the first detection signal S22.

[0066] Next, the second detection signal will be described with reference to Figure 4. When the intensity of the component of the target magnetic field parallel to the W2 direction changes, the resistance values ​​of the resistors R31 to R34 of the second detection circuit 30 change such that the resistance values ​​of resistors R31 and R33 increase while the resistance values ​​of resistors R32 and R34 decrease, or the resistance values ​​of resistors R31 and R33 decrease while the resistance values ​​of resistors R32 and R34 increase. As a result, the potentials of the signal output terminals E31 and E32 change. The second detection circuit 30 is configured to generate a signal corresponding to the potential of the signal output terminal E31 as the second detection signal S31, and a signal corresponding to the potential of the signal output terminal E32 as the second detection signal S32.

[0067] Next, the operation of the processor 40 will be described. The processor 40 is configured to generate a first detection value and a second detection value based on the first detection signals S21, S22 and the second detection signals S31, S32. The first detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the V direction. The second detection value is the detection value corresponding to the component of the target magnetic field in the direction parallel to the Z direction. Hereafter, the first detection value will be denoted by the symbol Sv and the second detection value will be denoted by the symbol Sz.

[0068] The processor 40 generates the first and second detection values ​​Sv and Sz, for example, as follows: First, the processor 40 generates value S1 by an operation that includes calculating the difference S21-S22 between the first detection signal S21 and the first detection signal S22, and then generates value S2 by an operation that includes calculating the difference S31-S32 between the second detection signal S31 and the second detection signal S32. Next, the processor 40 calculates values ​​S3 and S4 using the following equations (1) and (2).

[0069] S3 = (S2 + S1) / (2cosα) …(1) S4 = (S2 - S1) / (2sinα) …(2)

[0070] The first detected value Sv may be the value S3 itself, or it may be the value S3 to which predetermined corrections such as gain adjustment and offset adjustment have been applied. Similarly, the second detected value Sz may be the value S4 itself, or it may be the value S4 to which predetermined corrections such as gain adjustment and offset adjustment have been applied.

[0071] Next, the structural features of the magnetic sensor 1 according to this embodiment will be described. The magnetic sensor 1 comprises a substrate 301 having an upper surface 301a, a support member disposed on the substrate 301, a first MR element 50B, and a second MR element 50C. In this embodiment, the insulating layer 305 corresponds to the support member. A plurality of lower coil elements 81 and insulating layers 302 to 304 are interposed between the substrate 301 and the insulating layer 305. The insulating layer 305 has a first inclined surface 305a and a second inclined surface 305b.

[0072] Each of the first and second MR elements 50B and 50C includes at least two magnetic films, namely a magnetized fixed layer 52 and a free layer 54. The two magnetic films of the first MR element 50B constitute a part (essential part) of the first MR element 50B. The two magnetic films of the second MR element 50C constitute a part (essential part) of the second MR element 50C. Hereinafter, the two magnetic films will be referred to as functional layers. The functional layer of the first MR element 50B is located on the first inclined surface 305a. The functional layer of the second MR element 50C is located on the second inclined surface 305b.

[0073] The first inclined surface 305a and the second inclined surface 305b are oriented in different directions from each other. In one convex surface 305c, the first inclined surface 305a and the second inclined surface 305b may be symmetrical with respect to a virtual UZ plane perpendicular to the upper surface 301a of the substrate 301.

[0074] From the viewpoint of reducing the height of the magnetic sensor 1, it is preferable that the dimensions of the first inclined surface 305a and the second inclined surface 305b in a direction perpendicular to the upper surface 301a of the substrate 301, i.e., parallel to the Z direction, are within the range of 1.4 μm to 3.0 μm.

[0075] The insulating layer 305 has a convex surface 305c. The convex surface 305c protrudes in a direction away from the upper surface 301a of the substrate 301. At least a portion of the convex surface 305c is inclined with respect to the upper surface 301a of the substrate 301. In this embodiment in particular, the convex surface 305c includes a first inclined surface 305a and a second inclined surface 305b.

[0076] The dimensions of the convex surface 305c in the direction perpendicular to the upper surface 301a of the substrate 301, i.e., in the direction parallel to the Z direction, are the same as the dimensions of the first and second inclined surfaces 305a and 305b in the direction parallel to the Z direction. That is, the dimensions of the convex surface 305c in the direction parallel to the Z direction are preferably in the range of 1.4 μm to 3.0 μm. Furthermore, the dimensions of the convex surface 305c in the direction parallel to the V direction are preferably, for example, 3 μm to 16 μm.

[0077] The insulating layer 305 includes a flat portion 32 and a plurality of protrusions 31. Below, we will focus on one of the protrusions 31 and describe its shape in detail. Figure 8 is a plan view showing the support member, i.e., the insulating layer 305.

[0078] The protruding portion 31 extends along the U-direction parallel to the upper surface 301a of the substrate 301 and has an end portion 31a located at the U-direction end and an end portion 31b located at the -U-direction end. As shown in Figure 8, the shapes of the ends 31a and 31b when viewed from the Z-direction are irregular shapes, such as periodic jagged shapes. The shapes of the ends 31a and 31b will be described in detail later.

[0079] The projection 31 includes a first portion 311, a second portion 312 located beyond the first portion 311 in the U direction, and a third portion 313 located beyond the first portion 311 in the -U direction. In Figure 8, the boundaries between the first portion 311 and the second portion 312, and between the first portion 311 and the third portion 313, are shown by dashed lines. The second portion 312 includes an end portion 31a. The third portion 313 includes an end portion 31b.

[0080] The first portion 311 is the main part of the protrusion 31. Although not shown, the functional layers (magnetization fixed layer 52 and free layer 54) of the first and second MR elements 50B and 50C are arranged on the first portion 311. On the other hand, functional layers may not be arranged on the second and third portions 312 and 313.

[0081] The lower electrode 61, the upper electrode 62, and the aforementioned specific electrodes (not shown) may or may not be positioned on the second and third portions 312, 313. The upper coil element 82 may or may not be positioned on the second and third portions 312, 313.

[0082] Figure 9 is a cross-sectional view showing the first portion 311 and the second portion 312. In Figure 9, the boundary between the projection 31 and the flat portion 32, and the boundary between the first portion 311 and the second portion 312 are shown by dashed lines. The maximum dimension (maximum thickness of the first portion 311) of the first portion 311 in the Z direction is constant or approximately constant. Also, in any cross-section intersecting the projection 31 and parallel to the UZ plane, the dimension (thickness of the first portion 311) in the Z direction is constant or approximately constant.

[0083] The dimensions of the second portion 312 in the Z direction (the thickness of the second portion 312) decrease as it moves away from the first portion 311. That is, the maximum dimensions of the second portion 312 in the Z direction (the maximum thickness of the second portion 312) may decrease as it moves away from the first portion 311. Also, in any cross-section that intersects the projection 31 and is parallel to the UZ plane, the dimensions of the second portion 312 in the Z direction may decrease as it moves away from the first portion 311.

[0084] Furthermore, the dimensions of the second portion 312 in the Z direction may be less than or equal to the dimensions of the first portion 311 in the Z direction. That is, the maximum dimensions of the second portion 312 in the Z direction (the maximum thickness of the second portion 312) may be less than or equal to the maximum dimensions of the first portion 311 in the Z direction (the maximum thickness of the first portion 311). Also, in any cross-section intersecting the projection 31 and parallel to the UZ plane, the dimensions of the second portion 312 in the Z direction (the thickness of the second portion 312) may be less than or equal to the dimensions of the first portion 311 in the Z direction (the thickness of the first portion 311).

[0085] The description of the dimensions of the second part 312 also applies to the third part 313. Replacing the second part 312 with the third part 313 in the description of the dimensions of the second part 312 will result in the description of the dimensions of the third part 313.

[0086] Furthermore, the second portion 312 and the third portion 313 may or may not have a symmetrical shape with respect to the VZ plane intersecting the longitudinal center of the protruding portion 31.

[0087] Next, the shape of the end portion 31a of the protrusion 31 will be described in detail with reference to Figures 11 and 12. Figure 11 is a plan view showing multiple recesses. Figure 12 is a plan view showing one of the multiple recesses shown in Figure 11.

[0088] As shown in Figure 11, the protrusion 31 includes a plurality of recesses 31a1 at its U-direction end, each recessed in a direction parallel to the upper surface 301a of the substrate 301. In the example shown in Figure 11, each of the recesses 31a1 is recessed in the -U direction. The second portion 312 also includes a plurality of recesses 31a1.

[0089] Here, the portion located between two adjacent recesses 31a1 is called the protrusion 31a2. As shown in Figure 11, the protrusion 31 includes a plurality of protrusions 31a2. The protrusions 31a2 have a shape that protrudes in a direction parallel to the upper surface 301a of the substrate 301. In the example shown in Figure 11, each of the plurality of protrusions 31a2 protrudes in the U direction. The end 31a of the protrusion 31 is composed of a plurality of recesses 31a1 and a plurality of protrusions 31a2. The alternating arrangement of recesses 31a1 and protrusions 31a2 results in a periodic, jagged shape of the end 31a when viewed from the Z direction.

[0090] As shown in Figure 12, the recess 31a1 has two opposing side walls SW1 and SW2. The distance D1 between the two side walls SW1 and SW2 may increase along the U direction (as you move away from the first portion 311). That is, the dimensions of the recess 31a1 in the direction parallel to the V direction may increase along the U direction (as you move away from the first portion 311).

[0091] Although not shown, the recess 31a1 may further have two other side walls facing each other. The distance between the other two side walls may be constant, regardless of the distance from the first portion 311. The other two side walls may be located ahead of the two side walls SW1, SW2 in the U direction.

[0092] The protrusion 31a2 substantially comprises one side wall SW1 of two adjacent recesses 31a1 and the other side wall SW2 of the two adjacent recesses 31a1. The distance D2 between this side wall SW1 and this side wall SW2 decreases along the U direction (as you move away from the first portion 311). That is, the dimensions of the protrusion 31a2 in the direction parallel to the V direction decrease along the U direction (as you move away from the first portion 311).

[0093] Furthermore, as shown in Figure 11, the multiple recesses 31a1 are aligned along a direction intersecting the U direction. In particular, in the example shown in Figure 11, the multiple recesses 31a1 are aligned along the V direction, which is perpendicular to the U direction. The multiple recesses 31a1 include two specific recesses 31a1 located at both ends in a direction parallel to the V direction. In the example shown in Figure 11, each of the two specific recesses 31a1 has two side walls SW1, SW2 as shown in Figure 12.

[0094] Here, a certain value of interval D1 shown in Figure 12 is defined as the width of the recess 31a1. Also, a certain value of interval D2 shown in Figure 12 is defined as the distance between two adjacent recesses 31a1. For example, the average value of interval D1 may be used as the width of the recess 31a1, and the average value of interval D2 may be used as the distance between two adjacent recesses 31a1. Alternatively, the intervals D1 and D2 in the VZ cross section intersecting the center of the recess 31a1 in a direction parallel to the U direction may be used as the width of the recess 31a1 and the distance between two adjacent recesses 31a1, respectively. In this embodiment, the distance between two adjacent recesses 31a1 is greater than the width of the recess 31a1. Note that the distance between two adjacent recesses 31a1 is also substantially the width of the protrusion 31a2. Therefore, in this embodiment, the width of the protrusion 31a2 is greater than the width of the recess 31a1.

[0095] Note that Figure 8 shows an example where multiple ends 31a of multiple protrusions 31 are aligned along the V direction for ease of understanding. That is, the multiple ends 31a are positioned at the same location in a direction parallel to the U direction. However, the multiple ends 31a do not necessarily have to be aligned along the V direction.

[0096] Here, with reference to Figures 13 and 14, a first and second modification in which the multiple ends 31a are not aligned along the V direction will be described. Figure 13 is a plan view showing the first modification of the arrangement of the multiple ends 31a. In the first modification, the multiple ends 31a are aligned along the Y direction. That is, the multiple ends 31a are positioned at the same location in a direction parallel to the X direction.

[0097] In the first modified example, in each of the multiple protrusions 31, the multiple recesses 31a1 may be arranged along a direction perpendicular to the U direction, or along a direction intersecting the U direction at an angle other than 90°. In the example shown in Figure 13, the multiple recesses 31a1 are arranged along the Y direction.

[0098] Furthermore, as described above, the multiple upper coil elements 82 extend in a direction parallel to the Y direction. In the first modified example, the multiple upper coil elements 82 may include upper coil elements 82 positioned on a plurality of ends 31a or a plurality of second portions 312.

[0099] Figure 14 is a plan view showing a second modified example of the arrangement of the multiple ends 31a. In the second modified example, the multiple ends 31a are aligned along the X direction. That is, the multiple ends 31a are arranged at the same position in a direction parallel to the Y direction.

[0100] In the second modified example, similar to the first modified example, the multiple recesses 31a1 in each of the multiple protrusions 31 may be arranged along a direction perpendicular to the U direction, or along a direction intersecting the U direction at an angle other than 90°. In the example shown in Figure 14, the multiple recesses 31a1 are arranged along the V direction.

[0101] In the second modification, the plurality of upper coil elements 82 may include upper coil elements positioned on one end 31a or one second portion 312, or upper coil elements positioned on two or more ends 31a or two or more second portions 312. Furthermore, each of the plurality of upper coil elements 82 may be electrically connected to the plurality of lower coil elements 81 at a position ahead of the plurality of ends 31a of the plurality of protrusions 31 in the -Y direction.

[0102] Up to this point, we have described the shape of the end portion 31a of the protruding portion 31. The shape of the end portion 31b of the protruding portion 31 is the same as that of the end portion 31a. That is, the protruding portion 31 includes a plurality of recesses at the -U-direction end of the protruding portion 31, each recessed in a direction parallel to the upper surface 301a of the substrate 301. The third portion 313 includes the plurality of recesses. The end portion 31b of the protruding portion 31 is composed of the plurality of recesses and a plurality of convex portions located between two adjacent recesses. The alternating arrangement of recesses and convex portions results in a periodic, jagged shape when viewed from the Z-direction of the end portion 31b.

[0103] The ends 31a and 31b of the projection 31 may have a shape symmetrical with respect to the VZ plane that intersects the center of the projection 31 in the longitudinal direction. In this case, each of the above-mentioned multiple recesses is recessed in the U direction.

[0104] The description of the shape of the multiple recesses 31a1 basically also applies to the multiple recesses that constitute the end portion 31b of the protruding portion 31. Similarly, the description of the arrangement of the multiple end portions 31a basically also applies to the multiple end portions 31b.

[0105] Next, the operation and effects of the magnetic sensor 1 according to this embodiment will be described. In this embodiment, first and second MR elements 50B, 50C, lower electrodes 61B, 61C, and upper electrodes 62B, 62C (hereinafter referred to as MR elements 50, etc.) are formed on the protrusions 31 of the insulating layer 305. The MR elements 50, etc. are formed by etching the film to be etched using photolithography. Therefore, in the manufacturing process of the magnetic sensor 1, a photoresist mask having a predetermined planar shape is formed on the protrusions 31.

[0106] Here, we consider forming a photoresist mask near the end portion 31a of the protruding portion 31. If the shape of the end portion 31a is smooth, the photoresist used to form the photoresist mask will flow away, and as a result, it will become impossible to form the photoresist mask accurately.

[0107] In contrast, in this embodiment, the protrusion 31 includes a plurality of recesses 31a1 that constitute the end portion 31a. According to this embodiment, by making the shape of the end portion 31a of the protrusion 31 an uneven shape, it is possible to suppress the flow of photoresist, and it becomes possible to form a photoresist mask with high precision. As a result, according to this embodiment, the shape accuracy of the MR element 50 and the like formed near the end portion 31a of the protrusion 31 can be improved.

[0108] Similarly, in this embodiment, the protrusion 31 includes a plurality of recesses that constitute the end portion 31b. According to this embodiment, for the same reasons as described above, the shape accuracy of the MR element 50 and the like formed near the end portion 31b of the protrusion 31 can be improved.

[0109] Furthermore, in this embodiment, the dimensions of the second portion 312 in the Z direction decrease as it moves away from the first portion 311. In particular, in this embodiment, the dimensions of the second portion 312 in the Z direction are less than or equal to the dimensions of the first portion 311 in the Z direction. That is, in this embodiment, the protruding portion 31 does not rise from the first portion 311 to the second portion 312. As a result, according to this embodiment, the shape accuracy of the MR element 50 and the like formed near the boundary between the first portion 311 and the second portion 312 can be improved. Moreover, according to this embodiment, deformation of the shape of the upper coil element 82 formed near the boundary between the first portion 311 and the second portion 312 can be suppressed.

[0110] Similarly, in this embodiment, the dimensions of the third portion 313 in the Z direction decrease as it moves away from the first portion 311. In particular, in this embodiment, the dimensions of the third portion 313 in the Z direction are less than or equal to the dimensions of the first portion 311 in the Z direction. According to this embodiment, for the same reasons as described above, the shape accuracy of the MR element 50 and the like formed near the boundary between the first portion 311 and the third portion 313 can be improved, and deformation of the shape of the upper coil element 82 formed near the boundary between the first portion 311 and the third portion 313 can be suppressed.

[0111] Next, other effects of this embodiment will be described. In this embodiment, the dimensions of the convex surface 305c in the direction parallel to the Z direction are preferably within the range of 1.4 μm to 3.0 μm. According to the exemplary embodiment, by setting the dimensions of the convex surface 305c to 1.4 μm or more, the inclination of the first inclined surface 305a and the second inclined surface 305b can be increased, thereby increasing the sensitivity of the magnetic sensor 1 to the component of the target magnetic field in the direction parallel to the Z direction. As a result, according to the exemplary embodiment, the second detected value Sz can be generated with high accuracy. Furthermore, according to the exemplary embodiment, by setting the dimensions of the convex surface 305c to 3.0 μm or less, a photoresist mask consisting of a photoresist layer can be accurately formed on the first inclined surface 305a and the second inclined surface 305b during the manufacturing process of the magnetic sensor 1.

[0112] [Differentiation] Next, a modified example of the end portion 31a of the projection 31 will be described with reference to Figure 15. Figure 15 is a plan view showing a modified example of the end portion 31a. In the modified example, the plurality of recesses 31a1 include two specific recesses 31a1 located at both ends in a direction parallel to the V direction. The plurality of recesses 31a1 other than the two specific recesses 31a1 have two side walls SW1, SW2 as described with reference to Figure 12. On the other hand, each of the two specific recesses 31a1 has only one side wall corresponding to either side wall SW1 or side wall SW2.

[0113] [Second Embodiment] Next, a second embodiment of the present invention will be described with reference to Figure 16. Figure 16 is a plan view showing a plurality of recesses in this embodiment.

[0114] In this embodiment, the distance between two adjacent recesses 31a1 (for example, the average value of the distance D2 shown in Figure 12) is less than or equal to the width of the recess 31a1 (for example, the average value of the distance D1 shown in Figure 12). In the example shown in Figure 16, the distance between two adjacent recesses 31a1 is smaller than the width of the recess 31a1. That is, in this embodiment, the width of the protrusion 31a2 is smaller than the width of the recess 31a1.

[0115] Other configurations, operations, and effects in this embodiment are the same as those in the first embodiment.

[0116] It should be noted that the present invention is not limited to the embodiments described above, and various modifications are possible. For example, the magnetic detection element is not limited to an MR element, but may be an element that detects a magnetic field other than an MR element, such as a Hall element.

[0117] Furthermore, the magnetic sensor 1 may also include a third detection circuit configured to detect a component of the target magnetic field in a direction parallel to the XY plane and to generate at least one third detection signal corresponding to this component. In this case, the processor 40 may be configured to generate a detection value corresponding to the component of the target magnetic field in a direction parallel to the U direction based on at least one third detection signal. The third detection circuit may be integrated with the first and second detection circuits 20, 30, or it may be included in a separate chip from the first and second detection circuits 20, 30.

[0118] Furthermore, the sensor element of the present invention is not limited to a magnetic detection element, but may also be a sensor element configured to change its physical properties in accordance with a predetermined physical quantity. The predetermined physical quantity is not limited to a magnetic field, but may include quantities of any physical state that can be detected by the sensor element, such as an electric field, temperature, displacement, and force. The above description of the embodiment also applies to sensors other than magnetic sensors that are equipped with sensor elements other than a magnetic detection element, by replacing the magnetic detection element with a sensor element. In this case, the functional layer may be a part that constitutes at least a part of the sensor element and whose physical properties change in accordance with a predetermined physical quantity. Also, in this case, the metal layer may be any wiring layer.

[0119] As described above, the sensor of the present invention is a sensor configured to detect a predetermined physical quantity. The sensor of the present invention comprises a substrate having an upper surface, a support member disposed on the substrate, and a sensor element configured to change its physical properties according to a predetermined physical quantity. The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate, and at least one protruding portion having a shape that protrudes from the flat surface. The at least one protruding portion has an inclined surface that is inclined with respect to the upper surface of the substrate. The sensor element includes a functional layer that constitutes at least a part of the sensor element. The functional layer is disposed on the inclined surface. The at least one protruding portion extends along a first direction parallel to the upper surface of the substrate and includes a plurality of recesses at the end of the at least one protruding portion in the first direction, each recessed in a direction parallel to the upper surface of the substrate.

[0120] In the sensor of the present invention, at least one projection may include a first portion and a second portion that is located ahead of the first portion in a first direction and includes a plurality of recesses. The dimensions of the second portion in a second direction perpendicular to the upper surface of the substrate may decrease as it moves away from the first portion. The dimensions of the second portion in the second direction may be less than or equal to the dimensions of the first portion in the second direction. A functional layer may be disposed on top of the first portion.

[0121] Furthermore, in the sensor of the present invention, at least some of the recesses of the plurality of recesses may have two side walls facing each other. The distance between the two side walls may increase along the first direction. The plurality of recesses may be arranged along a third direction parallel to the upper surface of the substrate and intersecting the first direction, and may include two specific recesses located at both ends in the direction parallel to the third direction. Each of the two specific recesses may have two side walls. The distance between two adjacent recesses among the plurality of recesses may be greater than or less than the width of each of the plurality of recesses.

[0122] Furthermore, in the sensor of the present invention, the plurality of recesses may be arranged along a direction parallel to the upper surface of the substrate and perpendicular to the first direction. Alternatively, the plurality of recesses may be arranged along a direction parallel to the upper surface of the substrate and intersecting the first direction at an angle other than 90°.

[0123] Furthermore, in the sensor of the present invention, at least one protrusion may be multiple protrusions.

[0124] Furthermore, in the sensor of the present invention, the predetermined physical quantity may be at least one of the direction and intensity of the external magnetic field. The sensor element may be a magnetic detection element configured to detect a change in at least one of the direction and intensity of the external magnetic field. The magnetic detection element may be a magnetoresistive element. The functional layer may include a plurality of magnetic films. The magnetoresistive element may further include a non-magnetic metal layer disposed between the inclined surface and the plurality of magnetic films. [Explanation of symbols]

[0125] 1...Magnetic sensor, 20...First detection circuit, 30...Second detection circuit, 31...Protruding part, 32...Flat part, 40...Processor, 50...MR element, 50B...First MR element, 50C...Second MR element, 51...Antiferromagnetic layer, 52...Magnetization fixed layer, 53...Gap layer, 54...Free layer, 61,61B,61C...Lower electrode, 62,62B,62C...Upper electrode, 80...Coil, 81...Lower coil element, 82...Upper coil element, 100...Magnetic sensor device, 301...Substrate, 301a...Top surface, 302~310...Insulating layer, 305a...First inclined surface, 305b...Second inclined surface, 305c...Convex surface, 305d...Flat surface, 311...First part, 312...Second part, 313...Third part, SW1,SW2...Side walls.

Claims

1. A sensor configured to detect a predetermined physical quantity, A substrate having an upper surface, A support member placed on the substrate, The system includes a sensor element configured to change its physical properties according to a predetermined physical quantity, The support member includes a flat portion having a flat surface parallel to the upper surface of the substrate, and at least one protruding portion having a shape that protrudes from the flat surface and extends along a first direction parallel to the upper surface of the substrate. The at least one of the protrusions has an inclined surface that is inclined with respect to the upper surface of the substrate, The inclined surface is the surface on the second direction side of the at least one protrusion, which is perpendicular to the first direction and parallel to the upper surface of the substrate. The sensor element includes a functional layer that constitutes at least a part of the sensor element, The functional layer is placed on the inclined surface, The at least one projection includes a plurality of recesses at the end of the at least one projection in the first direction, in a direction parallel to the upper surface of the substrate, a first portion, and a second portion that is ahead of the first portion in the first direction and includes the plurality of recesses. A sensor characterized in that the dimensions of the second portion in a third direction perpendicular to the upper surface of the substrate continuously decrease as it moves away from the first portion.

2. The sensor according to claim 1, characterized in that the dimension of the second portion in the third direction is less than or equal to the dimension of the first portion in the third direction.

3. The sensor according to claim 1, characterized in that the functional layer is disposed on top of the first portion.

4. The sensor according to claim 3, characterized in that the functional layer is located only on the first portion and not on the second portion.

5. The sensor according to claim 1, characterized in that at least some of the recesses of the plurality of recesses have two side walls facing each other.

6. The sensor according to claim 5, characterized in that the distance between the two side walls increases along the first direction.

7. The plurality of recesses are arranged along a direction parallel to the upper surface of the substrate and intersecting the first direction, and include two specific recesses located at both ends in the direction parallel to that direction. The sensor according to claim 5, characterized in that each of the two specific recesses has the two side walls.

8. The sensor according to claim 5, characterized in that the distance between two adjacent recesses among the plurality of recesses is greater than the width of each of the plurality of recesses.

9. The sensor according to claim 5, characterized in that the distance between two adjacent recesses among the plurality of recesses is smaller than the width of each of the plurality of recesses.

10. The sensor according to claim 1, characterized in that the plurality of recesses are arranged along the second direction.

11. The sensor according to claim 1, characterized in that the plurality of recesses are arranged along a direction parallel to the upper surface of the substrate and intersecting the first direction at an angle other than 90°.

12. The sensor according to claim 1, characterized in that the at least one protrusion is a plurality of protrusions.

13. The predetermined physical quantity is at least one of the direction and intensity of the external magnetic field. The sensor according to any one of claims 1 to 11, characterized in that the sensor element is a magnetic detection element configured to detect a change in at least one of the direction and intensity of the external magnetic field.

14. The magnetic detection element is a magnetoresistive element. The sensor according to claim 13, characterized in that the functional layer includes a plurality of magnetic films.

15. The sensor according to claim 14, wherein the magnetoresistive element further includes a non-magnetic metal layer disposed between the inclined surface and the plurality of magnetic films.

16. Furthermore, comprising a coil, The sensor according to any one of claims 1 to 11, characterized in that a part of the coil is arranged to span the first part and the second part.

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