Information processing device, information processing method, and program

Abstract

To provide a system capable of computing an absorbance distribution produced by ultraviolet exposure of a photosensitive resin composition serving as a scatterer.SOLUTION: An information processing device comprises an acquisition unit that acquires an optical parameter of a scattering layer serving as a scatterer, and a calculation unit that, based on the film thickness and the optical parameter of the scattering layer, computes an absorbance distribution in the scattering layer when light of a predetermined wavelength is applied to a predetermined irradiation point.SELECTED DRAWING: Figure 1A

Description

Technical Field

[0001] The present invention relates to an information processing apparatus, an information processing method, and a program.

Background Art

[0002] A photosensitive resin composition is a material that forms an insulating film covering the surface of a printed circuit board to protect the circuit pattern, or a material used for forming a circuit on a substrate. It has a role of preventing solder from adhering to unnecessary parts during component mounting, and a role of preventing a circuit from being formed on unnecessary parts during circuit formation.

[0003] For such a photosensitive resin composition, for example, after exposing a substrate having the photosensitive resin composition formed on the entire surface through a negative film or a positive film on which a circuit pattern is formed, or by directly using a direct drawing apparatus for exposure, a fine pattern can be formed by developing the soluble part with a developer. However, in order to obtain a desired pattern, the knowledge of an expert is required for the composition design of the photosensitive resin composition and the adjustment of the exposure and development process conditions, and the prediction is not easy. Therefore, a technique for predicting in advance the pattern shape obtained by pattern exposure of a photosensitive resin composition has been demanded.

[0004] In order to predict the pattern shape obtained by pattern exposure of a photosensitive resin composition, it is important to accurately predict how the light exposed to the photosensitive resin composition is absorbed in the photosensitive resin composition, that is, the light absorption amount distribution. In this regard, for example, in the field of resist materials formed on a semiconductor wafer, the technique described in Patent Document 1 is known as a technique for calculating the energy accumulation distribution when irradiating a resist material with an electron beam.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] However, in the case of photosensitive resin compositions that are scatterers (e.g., solder resist), it was sometimes not possible to apply the techniques used to calculate the absorbance distribution and energy storage distribution used in resist materials.

[0007] Specifically, since the resist material formed on a semiconductor wafer does not contain scattering components such as inorganic fillers, organic fillers, or pigments, when irradiating the resist material with ultraviolet light, only light absorption is usually considered, and sufficient consideration has not been given to calculating the absorbance distribution that takes light scattering into account.

[0008] Furthermore, Patent Document 1 discloses a technique for calculating the energy storage distribution considering electron scattering of electron beams in electron beam lithography. However, the wavelength of electron beams differs significantly from the wavelength of ultraviolet light used for pattern formation of general photosensitive resin compositions, resulting in different physical phenomena between electron beam irradiation and ultraviolet irradiation. Specifically, in electron beam lithography, because the wavelength is very short, electron scattering, where the direction and energy of electron propagation are changed by atomic nuclei in the resist material, is the main physical phenomenon. However, when irradiating with ultraviolet light, which has a significantly different wavelength scale from electron beams, the effect of electron scattering becomes negligibly small. On the other hand, in photosensitive resin compositions, which are scatterers, the main physical phenomena are light absorption by components contained in the photosensitive resin composition and light scattering by scattering components (e.g., Mie scattering and Rayleigh scattering). The calculation of absorbance distribution considering light scattering by such scattering components has not been sufficiently studied.

[0009] Therefore, a system is needed that can calculate the absorbance distribution of a photosensitive resin composition, which is a scattering material, based on the material properties of the photosensitive resin composition, which is a scattering material, and the ultraviolet exposure conditions for the photosensitive resin composition, which is a scattering material.

[0010] This invention has been made in view of the above-mentioned problems, and aims to provide a system capable of calculating the absorbance distribution obtained by exposing a photosensitive resin composition, which is a scattering material, to ultraviolet light.

[0011] Furthermore, such a system would make it possible to propose equipment for performing the exposure process of a photosensitive resin composition, which is a scattering material, and exposure process conditions that match the pattern shape to be formed by the exposure and development process. It is also conceivable that the simulation results from such a system could be utilized in the material design of the photosensitive resin composition. [Means for solving the problem]

[0012] An information processing device according to one aspect of the present invention includes an acquisition unit that acquires optical parameters of a scattering layer which is a scattering body, and a calculation unit that calculates the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated to a predetermined irradiation point based on the thickness of the scattering layer and the optical parameters. [Effects of the Invention]

[0013] According to the present invention, a system is available that can calculate the absorbance distribution obtained by exposing a photosensitive resin composition, which is a scattering material, to ultraviolet light. [Brief explanation of the drawing]

[0014] [Figure 1A] This is a schematic diagram showing the configuration of the information processing system of this embodiment. [Figure 1B] This is a schematic diagram of the hardware and functional configuration of the information processing device of this embodiment. [Figure 2A] This is a schematic cross-sectional view showing the laminate of this embodiment. [Figure 2B] This is a schematic diagram showing the position of a photon emitted from a single light source, the amount of energy lost by the photon, and the calculation of its coordinates. [Figure 2C] This is a schematic diagram illustrating the integration of absorbance distributions calculated for each of multiple irradiation points. [Figure 3]This is a flowchart of the information processing method according to the present embodiment.

Embodiments for Carrying Out the Invention

[0015] Hereinafter, embodiments of the present invention (hereinafter referred to as "the present embodiment") will be described in detail with reference to the drawings. However, the present invention is not limited thereto, and various modifications are possible without departing from the gist thereof.

[0016] 1. Information Processing Apparatus FIG. 1A shows a schematic diagram showing the configuration of an information processing system 1 according to an embodiment of the present invention. As shown in FIG. 1A, in an example of the information processing system 1, a server 100 serving as an information processing apparatus (hereinafter also referred to as "information processing apparatus 100") and a user apparatus 200 are communicably connected via a network N such as the Internet.

[0017] The information processing apparatus 100 is an information processing apparatus realized by a program, and may transmit a processing result to the user apparatus 200 in response to a processing request received from the user apparatus 200 via the communication interface 120 and the network N. For example, the information processing apparatus 100 acquires optical parameters of a scattering layer that is a scatterer from the user apparatus 200. Then, based on the film thickness and optical parameters of the scattering layer, an absorption amount distribution in the scattering layer when light of a predetermined wavelength is irradiated on a predetermined irradiation point may be calculated and transmitted to the user apparatus 200.

[0018] The user apparatus 200 is an information processing apparatus used by a user who executes information processing, and may be, for example, a computer, a smartphone, a tablet terminal, a personal computer, or the like.

[0019] Note that FIG. 1A shows a client / server system including an information processing apparatus 100 and a user apparatus 200. Hereinafter, a mode in which the server functions as the information processing apparatus 100 will be described. However, the system of the present embodiment is not limited to this, and instead of this system configuration, the user apparatus 200 may be provided with the processing functions of the information processing apparatus described later.

[0020] Further, the information processing apparatus 100 can also be referred to as an absorbance calculation apparatus for calculating the absorbance, and can also be referred to as a pattern shape prediction apparatus when predicting the pattern shape.

[0021] Hereinafter, while referring to FIG. 1B, the hardware configuration and functional configuration of the information processing apparatus 100 will be described, and then each control will be described in detail in association with the functional configuration of the information processing apparatus 100.

[0022] As shown in FIG. 1B, the information processing apparatus 100 includes, for example, a processor 110, a communication interface 120, an input / output interface 130, a memory 140, a storage 150, and one or more communication buses 160 for interconnecting these components.

[0023] The processor 110 executes a process, function, or method realized by code or instructions included in a program stored in the storage 150. The processor 110 includes, by way of example and not limitation, one or more central processing units (CPUs), MPUs, GPUs, etc., and each process, function, or method disclosed in each embodiment may be realized by a logic circuit (hardware) formed in an integrated circuit or the like or a dedicated circuit.

[0024] As shown in FIG. 1B, the processor 110 of the present embodiment may be configured to function as an acquisition unit 111, a calculation unit 112, a drawing unit 113, and a proposal unit 114.

[0025] The communication interface 120 transmits and receives various types of data with other devices via the network N. This communication may be performed via wired or wireless connection, and any communication protocol may be used as long as communication between the devices is possible. For example, the communication interface 120 may be implemented as hardware such as a network adapter, various types of communication software, or a combination thereof.

[0026] Network N may include, but is not limited to, an ad-hoc network, an intranet, an extranet, a virtual private network (VPN), a local area network (LAN), a wireless LAN (WLAN), a wide area network (WAN), a wireless WAN (WWAN), a metropolitan area network (MAN), part of the internet, part of the public switched telephone network (PSTN), a mobile phone network, ISDNs (Integrated Service Digital Networks), wireless LANs, LTE (Long Term Evolution), CDMA (Code Division Multiple Access), Bluetooth, satellite communications, etc., and may be a combination of these. Network N may include one or more networks.

[0027] The input / output interface 130 includes an input device for inputting various operations to the information processing device 100, and an output device for outputting processing results processed by the information processing device 100. For example, the input / output interface 130 includes information input devices such as a keyboard, mouse, and touch panel, and information output devices such as a display. The information processing device 100 may accept predetermined inputs or perform predetermined outputs by connecting an external input / output interface 130.

[0028] Memory 140 temporarily stores the program loaded from storage 150 and provides a workspace for the processor 110. Various data generated while the processor 110 is executing the program are also temporarily stored in memory 140. Memory 140 may be, for example, high-speed random access memory such as DRAM, SRAM, DDR RAM, or other random access solid-state memory, or a combination thereof.

[0029] The storage 150 stores programs, various functional units, and various data. The storage 150 may be, for example, one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid-state storage devices, or a combination thereof. Another example of the storage 150 is one or more storage devices installed remotely from the processor 110.

[0030] The communication bus 160 is not particularly limited as long as it is a known dedicated communication channel for exchanging data and control information between hardware configurations.

[0031] Next, we will describe in detail each of the functional units of the information processing device of this embodiment. Before going into the details of this embodiment, we will first explain the scattering layer that is the target of absorbance calculation as background knowledge.

[0032] As an example of a scattering layer to which the information processing apparatus of this embodiment is applied, a solder resist layer will be described. Figure 2A shows a schematic cross-sectional view of a laminate 10 in which a solder resist layer 12 and a support layer (e.g., a PET layer) 13 are laminated on a substrate (e.g., a copper substrate) 11, as a configuration when the solder resist layer is exposed. The laminate 10 has two or more layers with different optical properties, namely the substrate 11, the solder resist layer 12 and the support layer 13, and the solder resist layer 12 is a scattering layer that is a scattering body. Since the solder resist layer 12 is a scattering body that has scattering components 14 such as inorganic fillers, organic fillers, pigments, and / or scattering regions such as the phase separation structure of the resin component and surface irregularities, light absorption and scattering occur inside the solder resist layer 12. In other words, the solder resist layer 12 is also a scattering absorber.

[0033] As shown in Figure 2A, when light is shone from the support layer 13 toward the substrate 11, the light propagates through the solder resist layer 12 while being absorbed or scattered. The solder resist layer 12 that has absorbed a certain amount of light or more hardens, and in the subsequent developing process, the hardened solder resist layer 12 in the exposed areas remains as a pattern. The solder resist layer 12 in the unexposed areas may also remain as a pattern.

[0034] In this embodiment, the acquisition unit 111 acquires the optical parameters of the scattering layer (for example, the solder resist layer 12), which is a scattering material. In this case, the acquisition unit 111 acquires each optical parameter assuming that the scattering layer is a single homogeneous material. Here, the optical parameters include at least one of the refractive index n, the absorption coefficient μa, the scattering coefficient μs, and the scattering anisotropy parameter g.

[0035] When applying the information processing device of this embodiment to a laminate having a scattering layer, the optical parameters of each layer of the laminate may be acquired, or the optical parameters of at least the light-transmitting layers in the laminate may be acquired. For example, in the laminate 10, the optical parameters of the solder resist layer 12 and the support layer 13 may be acquired.

[0036] If the optical parameters of the scattering layer, etc., are known, the acquisition unit 111 may acquire those values. If the optical parameters of the scattering layer, etc., are unknown, the acquisition unit 111 may calculate the optical parameters of the scattering layer, etc., based on the optical parameters of each component contained in the scattering layer, etc.

[0037] However, if the scattering layer is a composite material (e.g., solder resist layer 12), it may be difficult to calculate the optical parameters of the scattering layer from the material composition, taking into account the size, shape, refractive index, etc., of the scattering body, since the composite material contains many components. In this embodiment, the acquisition unit 111 may estimate the optical parameters of the scattering layer by inverse Monte Carlo method based on the transmittance and reflectance of the scattering layer, etc.

[0038] Furthermore, for example, if the scattering layer is a thin film, it may be difficult to measure the transmittance and reflectance of the scattering layer alone as a self-supporting film. In this embodiment, the acquisition unit 111 may estimate the optical parameters of the scattering layer by inverse Monte Carlo method based on the transmittance and reflectance of a composite layer comprising a scattering layer laminated on a support layer.

[0039] More specifically, the acquisition unit 111 may first estimate and acquire the optical parameters of the support layer using the inverse Monte Carlo method based on the measured values ​​of transmittance and reflectance, for the support layer only. For example, the acquisition unit 111 may repeatedly calculate the values ​​while changing at least one value of optical parameters such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g of each layer until calculated values ​​of reflectance and transmittance that are approximately equal to the measured values ​​are obtained, thereby estimating and acquiring predetermined optical parameters for which the measured and calculated values ​​of reflectance and transmittance are approximately equal. More specifically, the acquisition unit 111 may compare the measured and calculated values ​​of reflectance and transmittance and search for optical parameters such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g of each layer such that the difference in reflectance and the difference in transmittance are less than or equal to predetermined values.

[0040] By repeating this procedure, optical parameters such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g of the support layer can be estimated. Subsequently, the acquisition unit 111 may estimate and acquire the optical parameters of the scattering layer using the inverse Monte Carlo method based on the measured transmittance and reflectance values ​​of the composite layer and the optical parameters of the support layer. Furthermore, in order to improve the accuracy of estimating the optical parameters, the optical parameters of the scattering layer may be estimated using the inverse Monte Carlo method based on the measured transmittance and reflectance values ​​of multiple composite layers having scattering layers formed with different film thicknesses and the optical parameters of the support layer.

[0041] Furthermore, the scattering layer in this embodiment is made of a photosensitive resin composition and is a scattering body having a scattering component and / or a scattering region. The scattering component and scattering region are components or regions in the scattering layer that scatter ultraviolet light. The scattering component may be an inorganic filler, an organic filler, a pigment, etc., and the scattering region may be a phase separation structure of the resin component contained in the scattering layer or an uneven surface of the scattering layer, etc. The scattering layer is a photosensitive resin composition layer, and may be, for example, a solder resist layer. The scattering layer may produce Rayleigh scattering, which is elastic scattering by particles smaller than the wavelength of light, or Mie scattering, which is scattering by particles larger than the wavelength of light, as scattering by the scattering component and scattering region. In this embodiment, when simply referring to scattering, it means Rayleigh scattering or Mie scattering, and is distinguished from scattering by electrons such as Thomson scattering and Compton scattering, or scattering by phonons such as Brillouin scattering and Raman scattering.

[0042] The calculation unit 112 calculates the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated to a predetermined irradiation point, based on the film thickness and optical parameters of each layer. For this calculation, as shown in Figure 2B, the amount of energy lost by the photon and its coordinates may be calculated using the Monte Carlo method based on the position of the photon emitted from a single light source, the angle of the irradiation light, the thickness of the scattering layer, and the optical parameters of the scattering layer (refractive index n, absorption coefficient μa, scattering coefficient μs, scattering anisotropy parameter g).

[0043] Using the Monte Carlo method, a specific absorbance distribution can be obtained for a scattering layer corresponding to a specific film thickness and optical parameters when light of a predetermined wavelength is irradiated at a predetermined irradiation point. The Monte Carlo method is a technique that enables statistical simulation using random numbers, and by using the Monte Carlo method, the behavior of each individual photon can be simulated. Specifically, by dividing light into many photons (groups), and treating them as energy particles of light that scatter, change direction, and are absorbed, the propagation path of photons and the attenuation of light intensity in the process can be simulated. The calculation unit 112 may obtain a predetermined reflectance and transmittance corresponding to the film thickness and optical parameters of each layer, as well as the absorbance distribution of photons incident from a single irradiation point, by performing calculations using the Monte Carlo method under these conditions, based on the film thickness and optical parameters of the scattering layer (refractive index n, absorption coefficient μa, scattering coefficient μs, scattering anisotropy parameter g). The distribution of light intensity lost by photons at each coordinate calculated here can be considered as the absorbance distribution.

[0044] Next, we will describe in detail the method for calculating the absorbance distribution using the Monte Carlo method. Consider the case where a single photon is incident on the surface of a material with a scattering coefficient of μs, an absorption coefficient of μa, and a scattering anisotropy parameter of g, then the mean free path L of that photon is expressed by the following equation (1).

number

[0045] Assuming that a photon traveling a distance L undergoes both scattering and absorption simultaneously, the photon's light intensity is attenuated by the weight of W shown in equation (2), and scattered in the direction of the zenith angle θ shown in equation (3) relative to the direction of the photon's propagation. Furthermore, scattering occurs isotropically in the azimuthal direction.

number

[0046] Here, f(θ) represents the cumulative distribution function of the scattering phase function p(θ), and is a random number between 0 and 1. Examples of phase functions include the Henyey-Greenstein phase function shown in equation (4).

number

[0047] In equation (4), when g ≠ 0, cosθ is given by equation (5).

number

[0048] Using these equations, it is possible to simulate the propagation path of a photon and the attenuation of light intensity during that process, based on the scattering coefficient μs, the absorption coefficient μa, and the scattering anisotropy parameter g. If the light intensity of a photon becomes sufficiently small (for example, to less than 1 / 10,000th of the incident light intensity), the photon can be considered to have been annihilated. If the photon is emitted from the incident surface of the material, it can be considered to have been reflected.

[0049] When a photon reaches the interface of a material, it can be assumed that the photon has been transmitted or reflected depending on the properties of the interface. For example, if the interface is the interface between the support layer 13 and the solder resist layer 12, the photon can be assumed to be transmitted or reflected based on a probability calculated using Fresnel's equation.

[0050] When an incident photon is annihilated or emitted outside the material through transmission or reflection, the Monte Carlo calculation for that photon is completed, and the coordinates where the photon's energy decayed and the amount of energy decay at those coordinates are recorded.

[0051] The absorbance calculated by the calculation unit 112 in this way is an absorption simulation of a single photon incident from a single irradiation point. By performing similar absorption simulations for multiple photons at a single irradiation point, the absorbance distribution of light incident from a single irradiation point can be calculated. As shown in Figure 2C, the calculation unit 112 may also calculate the absorbance distribution during pattern exposure by integrating the absorbance distributions calculated at each of the multiple irradiation points. This makes it possible to calculate the absorbance distribution of the scattering layer during pattern exposure. In particular, in predicting the pattern shape of a photosensitive resin composition, the absorbance distribution near the edges of the pattern exposure area is important. Therefore, irradiation points may be selected only from defined regions with a predetermined width and size, calculations may be performed using the Monte Carlo method, and these may be integrated to calculate the absorbance distribution of the entire region, including regions other than the defined region.

[0052] The calculation unit 112 may weight the absorbance distributions calculated for each of the multiple irradiation points based on the light intensity distribution. By weighting based on the light intensity distribution, it becomes possible to take into account the effects of wave optics, such as the focus shift of the exposure machine.

[0053] The light intensity distribution can be calculated using conventionally known methods, for example, by using the ideal lens approximation or Fourier transform, taking into account the mask pattern, the NA of the exposure device, aberrations, etc.

[0054] The drawing unit 113 may predict the pattern shape of the scattering layer based on the absorbance distribution of the scattering layer during pattern exposure calculated by the calculation unit 112 and the absorbance threshold. The absorbance threshold is the threshold amount of absorbance required for the scattering layer to harden, and may be a value that defines the boundary where the exposed portion remains as a pattern after development.

[0055] The absorbance threshold may be determined by comparing the absorbance distribution of the scattering layer during pattern exposure with the pattern shape obtained when the scattering layer is actually exposed and developed. Specifically, the absorbance threshold may be set as the boundary between the removed portion of the absorbance distribution and the portion remaining as the pattern, by comparing the absorbance distribution during pattern exposure with the pattern shape obtained when the scattering layer is actually exposed and developed.

[0056] Alternatively, the drawing unit may predict the development speed at each coordinate based on the absorbance distribution of the scattering layer during pattern exposure calculated by the calculation unit 112 and the relationship between the absorbance of the scattering layer and the development speed, and then predict the pattern shape of the scattering layer based on the predicted development speed at each coordinate.

[0057] The drawing unit 113 may also predict the pattern shape of the scattering layer by further considering the conditions of the development process. Examples of development process conditions include the composition of the developer solution, the development temperature, and the development time.

[0058] Next, Figure 3 illustrates the calculation process in the information processing method of this embodiment.

[0059] In step S01, the acquisition unit 111 receives input from the user via the input / output interface 130, etc., and acquires optical parameters such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g for the scattering layer.

[0060] Then, in step S02, the calculation unit 112 calculates the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters.

[0061] Next, in step S03, the calculation unit 112 determines the exposure area for pattern exposure by referring to mask data, etc., and performs an absorption simulation of photons incident from one irradiation point within the exposure area. The calculation unit 112 may also calculate the absorbance distribution during pattern exposure by integrating the absorbance distributions calculated at each of the multiple irradiation points. This makes it possible to obtain the absorbance distribution due to pattern exposure.

[0062] Finally, in step S04, the drawing unit 113 may predict the pattern shape based on the absorbance distribution and a predetermined threshold.

[0063] Thus, in this embodiment, the pattern shape in the scattering layer can be predicted by calculating the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point based on the optical parameters of the scattering layer.

[0064] Furthermore, the information processing device of this embodiment may have a suggestion unit 114 that suggests material properties of a photosensitive resin composition that satisfies the desired pattern shape, as well as exposure conditions or development conditions for the photosensitive resin composition, based on the pattern shape desired by the user.

[0065] 2. Information Processing Method The information processing method of this embodiment involves an information processing device performing the steps of: acquiring optical parameters of a scattering layer which is a scattering body; and calculating the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters.

[0066] The specific details of the method in this embodiment are described in the control processing above, so a detailed explanation is omitted here. Furthermore, the above method can also be described as an absorbance calculation method for calculating absorbance, and can also be described as a pattern shape prediction method when predicting pattern shape.

[0067] 3. Program The program of this embodiment performs the steps of: obtaining the optical parameters of a scattering layer, which is a scattering body; and calculating the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated to a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters.

[0068] The program may be recorded on a readable recording medium. The specific details of the processing performed by the program in this embodiment are described in the control processing section above, so a detailed explanation is omitted here. [Explanation of Symbols]

[0069] 1...Information processing system, 10...Laminate, 11...Substrate, 12...Solder resist layer, 13...Support layer, 14...Scattering component, 100...Information processing device, 110...Processor, 111...Acquisition unit, 112...Calculation unit, 113...Drawing unit, 114...Proposal unit, 120...Communication interface, 130...Input / output interface, 140...Memory, 150...Storage, 160...Communication bus, 200...User device

Claims

1. An acquisition unit that acquires the optical parameters of the scattering layer, which is a scattering material, The system includes a calculation unit that calculates the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters. The optical parameters include at least one of the refractive index n, the absorption coefficient μa, the scattering coefficient μs, and the scattering anisotropy parameter g. Information processing device.

2. The scattering layer is at least one layer of the laminate, The laminate has two or more layers having different optical parameters. The acquisition unit further acquires the optical parameters of each layer of the laminate other than the scattering layer, The calculation unit calculates the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the film thickness and optical parameters of each layer. The information processing apparatus according to claim 1.

3. The calculation unit calculates the absorbance distribution during pattern exposure by integrating the absorbance distributions in the scattering layer calculated at each of the multiple irradiation points. The information processing apparatus according to claim 1.

4. The system further includes a drawing unit that predicts the pattern shape based on the absorbance distribution and absorbance threshold during pattern exposure. The information processing apparatus according to claim 1.

5. The absorbance threshold is determined by comparing the absorbance distribution during pattern exposure with the pattern shape obtained after actual exposure and development. The information processing apparatus according to claim 4.

6. The drawing unit further considers the conditions of the development process to predict the pattern shape. The information processing apparatus according to claim 4.

7. The scattering layer produces Rayleigh scattering or Mie scattering. The information processing apparatus according to claim 1.

8. Information processing device, The steps include obtaining the optical parameters of the scattering layer, which is a scattering material, The steps include: calculating the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters; The optical parameters include at least one of the refractive index n, the absorption coefficient μa, the scattering coefficient μs, and the scattering anisotropy parameter g. Information processing methods.

9. In an information processing device, The steps include obtaining the optical parameters of the scattering layer, which is a scattering material, The procedure involves performing the steps of calculating the absorbance distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, based on the thickness of the scattering layer and the optical parameters, The optical parameters include at least one of the refractive index n, the absorption coefficient μa, the scattering coefficient μs, and the scattering anisotropy parameter g. program.

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