Semiconductor equipment

Abstract

The present invention provides a semiconductor device that makes it possible to improve withstand voltage. A semiconductor device according to one embodiment comprises first to third electrodes and first and second semiconductor parts. The first semiconductor part is of a first conductivity type. The first semiconductor part includes first to third semiconductor regions. The concentration of impurities of the first conductivity type in the second and third semiconductor regions is higher than the concentration of impurities of the first conductivity type in the first semiconductor region. The second semiconductor part includes first to fourth portions. The first to third portions are provided to a cell part. The first portion and the third portion have a first depth. The second portion is provided between the first portion and the third portion. The second portion has a second depth which is shallower than the first depth. The first portion is provided on the second semiconductor region. The fourth portion is provided on the third semiconductor region.

Description

[Technical Field]

[0001] Embodiments of the present invention relate to semiconductor devices. [Background technology]

[0002] In semiconductor devices, there is a need to improve voltage resistance. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-45865 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] Embodiments of the present invention provide a semiconductor device capable of improving voltage resistance. [Means for solving the problem]

[0005] According to the embodiment, the semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. The first semiconductor portion is provided between the first electrode and the second electrode and has a first conductivity type. The first semiconductor portion has a first semiconductor region, a second semiconductor region provided on the first semiconductor region in a first direction from the first electrode to the second electrode that intersects a second direction from the cell portion to the terminal portion, and in the cell portion, and having a higher impurity concentration of the first conductivity type than the impurity concentration of the first conductivity type in the first semiconductor region, and a third semiconductor region provided on the first semiconductor region in the first direction and in the terminal portion, and having a higher impurity concentration of the first conductivity type than the impurity concentration of the first conductivity type in the first semiconductor region. The second semiconductor portion is a second conductivity type provided on the first semiconductor portion. The second semiconductor portion has, in the cell portion, a first portion of a first depth, a second portion of a second depth shallower than the first depth, and a third portion of the first depth. The first portion, the second portion, and the third portion are provided on the second semiconductor region such that the second portion is provided between the first portion and the third portion. At the termination portion, the fourth portion is provided on the third semiconductor region. The third semiconductor portion is of the second conductivity type. The third semiconductor portion has a first region portion provided on the first portion, the second portion, and the third portion, and a second region portion provided on the fourth portion. The fourth semiconductor portion is of the first conductivity type. The fourth semiconductor portion is provided on the first portion, the first region portion, and the third portion. The third electrode is provided between the first portion and the second electrode. [Brief explanation of the drawing]

[0006] [Figure 1] This is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Figure 2] This is a schematic diagram illustrating the characteristics of a semiconductor device according to the first embodiment. [Figure 3] This is a schematic cross-sectional view illustrating a semiconductor device related to a comparative example. [Figure 4] This is a schematic diagram illustrating the characteristics of a semiconductor device related to a comparative example. [Figure 5] This is a schematic diagram illustrating the characteristics of a semiconductor device according to the first embodiment. [Figure 6] This is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. [Figure 7] This is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may be depicted differently in different drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figure 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in Figure 1, the semiconductor device 100 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor portion 11, a second semiconductor portion 12, a third semiconductor portion 13, and a fourth semiconductor portion 14. The first semiconductor portion 11, the second semiconductor portion 12, the third semiconductor portion 13, and the fourth semiconductor portion 14 contain SiC. The first semiconductor portion 11, the second semiconductor portion 12, the third semiconductor portion 13, and the fourth semiconductor portion 14 may contain at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor portions contain crystals. These semiconductor portions may contain silicon. These semiconductor portions may contain compound semiconductors containing Ga.

[0009] The first direction from the first electrode 51 to the second electrode 52 is defined as the Z-axis direction. One second direction perpendicular to the Z-axis direction is defined as the X-axis direction. The third direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0010] As shown in FIG. 1, the semiconductor device 100 includes a cell portion 110, a terminal portion 120, and a connection portion 130. The connection portion 130 is provided between the cell portion 110 and the terminal portion 120. For example, the cell portion 110, the terminal portion 120, and the connection portion 130 may be set for the first semiconductor portion 11.

[0011] The first semiconductor portion 11 has a first conductivity type. The second semiconductor portion 12 has a second conductivity type. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0012] The first semiconductor portion 11 is provided between the first electrode 51 and the second electrode 52. The first semiconductor portion 11 includes a cell portion 110, a connection portion 130, and a terminal portion 120. The first semiconductor portion 11 includes a first semiconductor region 11a, a second semiconductor region 11b, and a third semiconductor region 11c.

[0013] The second semiconductor region 11b is provided above the first semiconductor region 11a in the X-axis direction (the first direction) from the first electrode 51 to the second electrode 52, which intersects the Z-axis direction (the second direction) from the cell portion 110 to the terminal portion 120, and in the cell portion 110.

[0014] The third semiconductor region 11c is provided above the first semiconductor region 11a in the Z-axis direction and in the terminal portion 120.

[0015] The impurity concentrations of the first conductivity type in the second semiconductor region 11b and the third semiconductor region 11c are each higher than the impurity concentration in the first semiconductor region 11a. The first semiconductor region 11a is, for example, an n-region. The second semiconductor region 11b and the third semiconductor region 11c are, for example, n +These are regions. In the first semiconductor region 11a, the second semiconductor region 11b, and the third semiconductor region 11c, the boundaries between them may be clear or unclear.

[0016] The second semiconductor section 12 has, in the cell section 110, a first portion 12a with a first depth, a second portion 12b with a second depth shallower than the first depth, and a third portion 12c with a first depth. The second portion 12b is provided between the first portion 12a and the third portion 12c. The first portion 12a, the second portion 12b, and the third portion 12c are provided on the second semiconductor region 11b. In the termination section 120 of the second semiconductor section 12, a part of the fourth portion 12d is provided on the third semiconductor region 11c. The depth of the fourth portion 12d is a second depth shallower than the first depth. Here, the depth corresponds, for example, to the position in the X-axis direction (first direction) with reference to the position of the first electrode 51 in the first direction. The distance along the first direction between the first electrode 51 and the first portion 12a is shorter than the distance along the first direction between the first electrode 51 and the second portion 12b. The distance along the first direction between the first electrode 51 and the third portion 12c is shorter than the distance along the first direction between the first electrode 51 and the second portion 12b. The distance along the first direction between the first electrode 51 and the fourth portion 12d is longer than the distance along the first direction between the first electrode 51 and the first portion 12a. The distance along the first direction between the first electrode 51 and the fourth portion 12d is longer than the distance along the first direction between the first electrode 51 and the third portion 12c. In one example, the length of the fourth portion 12d along the second direction may be longer than the length of the third portion 12c along the second direction.

[0017] In the first part 12a, the second part 12b, the third part 12c, and the fourth part 12d, the boundaries between them may be clear or unclear. The first part 12a, the second part 12b, the third part 12c, and the fourth part 12d are semiconductor regions that represent a part of the second semiconductor part 12.

[0018] At the termination portion 120, a third semiconductor region 11c is provided on the side and bottom surfaces of the fourth portion 12d. At the termination portion 120, a portion of the third semiconductor region 11c is electrically connected to the second electrode 52. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is longer than the distance along the first direction between the first electrode 51 and the third portion 12c. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is shorter than the distance along the first direction between the first electrode 51 and the fourth portion 12d. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is longer than the distance along the first direction between the first electrode 51 and the second semiconductor region 11b.

[0019] The third semiconductor portion 13 is of the second conductivity type. The impurity concentration of the second conductivity type in the third semiconductor portion 13 is higher than the impurity concentration of the second conductivity type in the second semiconductor portion 12. The third semiconductor portion 13 is, for example, p ++ This is a region. The third semiconductor portion 13 includes a first region portion 13a and a second region portion 13b. The first region portion 13a is provided on the first portion 12a, the second portion 12b, and the third portion 12c. A part of the first region portion 13a is electrically connected to the second electrode 52. For example, the first region portion 13a makes ohmic contact with the second electrode 52. The second region portion 13b is provided on the fourth portion 12d at the termination portion 120. In the first region portion 13a and the second region portion 13b, the boundary may be clear or unclear. The first region portion 13a and the second region portion 13b are semiconductor regions that each represent a part of the third semiconductor portion 13.

[0020] The fourth semiconductor section 14 is of the first conductivity type. The impurity concentration of the first conductivity type in the fourth semiconductor section 14 is higher than the impurity concentration of the first conductivity type in the first semiconductor section 11. The fourth semiconductor section 14 is, for example, n ++This is a region. The fourth semiconductor portion 14 is provided on the first portion 12a, the first region portion 13a, and the second portion 12b. The fourth semiconductor portion 14 includes the first region 14a and the second region 14b. The first region 14a is provided on the first portion 12a. The second region 14b is provided on the second portion 12b. A part of the fourth semiconductor portion 14 is electrically connected to the second electrode 52. For example, the fourth semiconductor portion 14 makes ohmic contact with the second electrode 52. In the first region 14a and the second region 14b, the boundary may be clear or unclear. The first region 14a and the second region 14b are semiconductor regions that each represent a part of the fourth semiconductor portion 14.

[0021] A first insulating portion 41 is provided around the third electrode 53. A part of the first insulating portion 41 is provided between the second semiconductor region 11b and the third electrode 53. The first insulating portion 41 contains, for example, SiO2. In addition, an insulating portion 15 may be provided in the semiconductor device 100. The insulating portion 15 is provided between the fourth semiconductor portion 14 and the second electrode 52, between the fourth portion 12d and the second electrode 52, and between the fourth portion 12d and the second electrode 52.

[0022] As shown in Figure 1, the fifth semiconductor portion 16 is provided between the first electrode 51 and the first semiconductor portion 11 in the first direction. The impurity concentration of the first conductivity type in the fifth semiconductor portion 16 is higher than the impurity concentration of the first semiconductor portion 11. The fifth semiconductor portion 16 may correspond to, for example, at least one of a buffer layer and a substrate. A low-resistance electrical connection is obtained.

[0023] For example, as shown in Figure 1, the semiconductor device 100 may be provided with a first silicide 17a and a second silicide 17b. The first silicide 17a is provided in the cell portion 110. In the first direction, the first silicide 17a is provided between the first region portion 13a and the second electrode 52. At least a portion of the first silicide 17a is provided between the first region 14a and the second region 14b in the second direction. The second silicide 17b is provided in the terminal portion 120. In the first direction, the second silicide 17b is provided between the second region portion 13b and the second electrode 52.

[0024] In the semiconductor device 100, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential referenced to the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 100 is, for example, a transistor. Alternatively, the semiconductor device 100 may be, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) incorporating a Schottky barrier diode.

[0025] Figure 2 is a schematic diagram illustrating the characteristics of the semiconductor device 100. In Figure 2, the first electrode 51 and the fifth semiconductor portion 16 are omitted. In Figure 2, the electric field is high in areas with high density and low in areas with low density. Also, in the cell portion 110, the current E flows in the Y-axis direction through the second portion 12b.

[0026] Figure 3 is a schematic cross-sectional view illustrating semiconductor device 100A in a comparative example. In Figure 3, components identical to those in semiconductor device 100 are denoted by the same reference numerals. In semiconductor device 100A, a fourth semiconductor region 11d is provided on top of the first semiconductor region 11a, to which the second semiconductor region 11b of the cell portion 110 and the third semiconductor region 11c of the termination portion 120 are connected. The fourth semiconductor region 11d is n-type. The impurity concentration of the first conductivity type in the fourth semiconductor region 11d is higher than the impurity concentration in the first semiconductor region 11a.

[0027] Figure 4 is a schematic diagram illustrating the characteristics of semiconductor device 100A in a comparative example. In Figure 4, the electric field is high in the denser areas and low in the thinner areas. Also, at the termination portion 120, the current E flows in the Y-axis direction through the end of the fourth portion 12d.

[0028] As shown in Figure 4, when a fourth semiconductor region 11d is provided from the cell portion 110 through the connection portion 130 to the termination portion 120, the electric field becomes stronger at the termination portion 120, and the breakdown voltage of the semiconductor device 100A decreases. In contrast, as shown in Figure 2, in the semiconductor device 100 of this embodiment, the second semiconductor region 11b of the cell portion 110 and the third semiconductor region 11c of the termination portion 120 are spaced apart in the X-axis direction. This makes it possible to strengthen the electric field in the first portion 12a and the second portion 12b. Therefore, the electric field distribution shown in Figure 2 from the cell portion 110 to the termination portion 120 is milder than the electric field distribution shown in Figure 4. The breakdown voltage of the semiconductor device 100 can be improved.

[0029] Figure 5 shows an example of the voltage withstand capability of the semiconductor device 100. In Figure 5, the horizontal axis represents the drain voltage, and the vertical axis represents the drain current. In semiconductor device 100, the breakdown voltage exceeds the target voltage value T. The voltage value T is, for example, 1600V.

[0030] In the semiconductor device 100, a second semiconductor region 11b and a third semiconductor region 11c are provided. The second semiconductor region 11b and the third semiconductor region 11c each become a current diffusion layer.

[0031] In the cell portion 110, the first portion 12a and the third portion 12c of the first depth are provided on the second semiconductor region 11b. For example, the electric field of the first portion 12a and the third portion 12c can be made stronger by the second semiconductor region 11b. This can reduce the electric field from the cell portion 110 to the termination portion 120, thereby improving the breakdown voltage of the semiconductor device 100.

[0032] At the termination portion 120, the third semiconductor region 11c makes Schottky contact with the second electrode 52. A Schottky barrier diode (SBD) is formed in the region including the third semiconductor region 11c, the second electrode 52, and the contact area. This allows control of the operation of the parasitic diode at the termination portion 120. By increasing the contact area, it becomes possible to increase the unipolar current.

[0033] (Second Embodiment) The second embodiment differs in that it includes a fifth part 12e. Therefore, the differences resulting from the inclusion of the fifth part 12e will be explained. Components identical to those in the first embodiment are denoted by the same reference numerals, and detailed explanations are omitted.

[0034] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to the second embodiment. As shown in Figure 6, in the semiconductor device 200 according to this embodiment, the second semiconductor portion 12 in the connection portion 130 includes a fifth portion 12e. The configuration of the semiconductor device 200, excluding this portion, may be the same as that of the semiconductor device 100.

[0035] The depth of the fifth portion 12e is the third depth in the first direction. The third depth is deeper than the first depth of the first portion 12a and the third portion 12c. In this example, the position (depth) of the lower end of the fifth portion 12e is substantially the same as the position (depth) of the lower end of the second semiconductor region 11b. The distance along the first direction between the first electrode 51 and the fifth portion 12e is longer than the distance along the first direction between the first electrode 51 and the third portion 12c.

[0036] In the semiconductor device 200, the provision of the fifth portion 12e further reduces the electric field at the end of the third portion 12c. The semiconductor device 200 can further improve its withstand voltage.

[0037] (Third embodiment) Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to the third embodiment. As shown in Figure 7, in the semiconductor device 300 according to this embodiment, the configuration of the cell portion 110 and the connection portion 130 differs from their configurations in the semiconductor device 100. The rest of the configuration of the semiconductor device 300 may be the same as that of the semiconductor device 100 or the semiconductor device 200.

[0038] In the semiconductor device 300, in the cell portion 110, the third portion 12c extends toward the connection portion 130. The second region 14b above the second portion 12b also extends toward the connection portion 130.

[0039] A gap S2 is provided in the second semiconductor portion 12. The gap S2 is provided at the connection portion between the cell portion 110 and the connection portion 130. The width W1 of the gap S2 is, for example, 0.1 μm or more and 10 μm or less. The width W1 may be, for example, 1 μm. The depth of the lower end of the second semiconductor portion 12 corresponding to the gap S2 may be substantially the same as the depth of the lower end of the third semiconductor portion 13.

[0040] In the semiconductor device 300, the fifth portion 12e includes the gap S2. By providing the gap S2, the electric field can be more relaxed as compared with the semiconductor device 200 of the second embodiment. The semiconductor device 300 can further improve the breakdown voltage.

[0041] In an embodiment, for example, the impurity of the first conductivity type includes at least one selected from the group consisting of N, P, and As. For example, the impurity of the second conductivity type includes at least one selected from the group consisting of B, Al, and Ga.

[0042] In one example, the concentration of the impurity of the first conductivity type in the first semiconductor portion 11 is, for example, 1×10 14 cm -3 or more and 1×10 17 cm -3 or less. In one example, the concentration of the impurity of the second conductivity type in the second semiconductor portion 12 is, for example, 1×10 16 cm -3 or more and 1×10 20 cm -3 or less. In one example, the concentration of the impurity of the second conductivity type in the third semiconductor portion 13 is, for example, 1×10 19 cm -3 or more and 1×10 21 cm -3 or less. In one example, the concentration of the impurity of the first conductivity type in the fourth semiconductor portion 14 is, for example, 1×10 19 cm-3 The above 1 x 10 21 cm -3 The following applies: In one example, the concentration of the first conductivity type impurity in the fifth semiconductor section 16 is, for example, 1 × 10⁻⁶ 15 cm -3 The above 1 x 10 18 cm -3 The following applies. The impurity concentration mentioned above may, for example, be substantially equivalent to the carrier concentration.

[0043] In the embodiment, information regarding length and thickness is obtained by electron microscopy observation or the like. Information regarding the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy) or the like.

[0044] The embodiments include the following aspects:

[0045] (Note 1) First electrode and, The second electrode and A first semiconductor portion of a first conductivity type provided between the first electrode and the second electrode, The first semiconductor section is, The first semiconductor area, In the first direction from the first electrode to the second electrode that intersects the second direction from the cell portion to the terminal portion, and in the cell portion, a second semiconductor region is provided on the first semiconductor region, wherein the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region, In the first direction and at the terminal portion, a third semiconductor region is provided on the first semiconductor region, wherein the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region. The first semiconductor section having, A second semiconductor portion of a second conductivity type provided on the first semiconductor portion, The second semiconductor section is, In the aforementioned cell section, The first part of the first depth, A second portion of a second depth that is shallower than the first depth, The third portion of the first depth, The first, second, and third portions are provided on the second semiconductor region such that the second portion is provided between the first and third portions. At the aforementioned terminal section, The fourth portion is provided on the third semiconductor region, and the second semiconductor portion is provided on the third semiconductor region. The third semiconductor portion of the second conductivity type, The third semiconductor section is, A first regional portion provided on the first portion, the second portion and the third portion, A second region portion is provided on the aforementioned fourth portion, The third semiconductor section having, The fourth semiconductor portion of the first conductivity type provided on the first portion, the first region portion, and the third portion, A third electrode is provided between the first part and the second electrode, A semiconductor device equipped with [the necessary components].

[0046] (Note 2) The semiconductor device described in Appendix 1, wherein the third semiconductor region and the second electrode are in Schottky contact.

[0047] (Note 3) Furthermore, in the second direction, a connecting portion is provided between the cell portion and the terminal portion, The second semiconductor portion further includes a fifth portion, The fifth portion is provided on the first semiconductor region in the connection portion, The semiconductor device according to Appendix 1 or 2, wherein at least a portion of the fifth part has a third depth that is deeper than the first depth.

[0048] (Note 4) The fifth part is the semiconductor device described in Appendix 3, including the gap.

[0049] (Note 5) Further comprising a first insulating section, At least a portion of the first insulating portion is provided between the first portion and the third electrode, as described in any one of the appendices 1 to 4.

[0050] (Note 6) The impurity concentration of the first conductivity type in the fourth semiconductor portion is higher than the impurity concentration of the first conductivity type in the first semiconductor portion. The semiconductor device according to any one of the appendices 1 to 5, wherein the impurity concentration of the second conductivity type in the third semiconductor portion is higher than the impurity concentration of the second conductivity type in the second semiconductor portion.

[0051] (Note 7) A semiconductor device according to any one of the appendices 1 to 6, wherein a part of the third semiconductor portion and a part of the fourth semiconductor portion make ohmic contact with the second electrode.

[0052] (Note 8) The cell portion is provided with a silicide, The semiconductor device according to any one of the appendices 1 to 7, wherein the silicide is provided between the first region and the second electrode in the first direction, and at least a portion of the silicide is provided between the first region and the second region in the second direction.

[0053] (Note 9) The fifth semiconductor portion of the first conductivity type is further comprising: The fifth semiconductor portion is provided between the first electrode and the first semiconductor portion in the first direction, The semiconductor device according to any one of the appendices 1 to 8, wherein the impurity concentration of the first conductivity type in the fifth semiconductor portion is higher than the impurity concentration of the first conductivity type in the first semiconductor portion.

[0054] (Note 10) The semiconductor device according to any one of the appendices 1 to 9, wherein the first depth and the second depth correspond to the position in the first direction with reference to the position of the first electrode in the first direction.

[0055] (Note 11) The semiconductor device according to any one of the appendices 1 to 10, wherein the first semiconductor part, the second semiconductor part, the third semiconductor part, and the fourth semiconductor part include SiC.

[0056] According to one embodiment, a semiconductor device capable of improving voltage resistance is provided.

[0057] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element, such as electrodes, semiconductor parts, and insulating parts, included in a semiconductor device is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0058] Furthermore, combinations of two or more elements from any of the specific examples, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0059] Furthermore, all semiconductor devices that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0060] Furthermore, within the scope of the concept of the present invention, a person skilled in the art could conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of the present invention.

[0061] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0062] 11-14…1st to 4th Semiconductor Divisions, 11a~11c...1st to 3rd semiconductor region, 12a~12e...1st~5th parts, 13a, 13b...first and second area parts, 14a, 14b...first and second areas, 15...Insulating part, 16…5th Semiconductor Division, 17a, 17b... First and second silicide layers, 41...First insulating section, 51~53...1st~3rd electrode, 100, 200, 300... Semiconductor equipment, 110... Cell section, 120...Terminal section, 130...connection part, S2... Gap, W1…width

Claims

1. First electrode and, The second electrode and A first semiconductor portion having a first conductivity type is provided between the first electrode and the second electrode, The first semiconductor section is, The first semiconductor region, In the first direction from the first electrode to the second electrode that intersects the second direction from the cell portion to the terminal portion, and in the cell portion, a second semiconductor region is provided on the first semiconductor region, wherein the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region, In the first direction and at the terminal portion, a third semiconductor region is provided on the first semiconductor region, the impurity concentration of the first conductivity type is higher than that of the first conductivity type in the first semiconductor region, and the third semiconductor region is spaced apart from the second semiconductor region. The first semiconductor section having, A second semiconductor portion of a second conductivity type provided on the first semiconductor portion, The second semiconductor section is, In the aforementioned cell section, The first part of the first depth, A second portion of a second depth that is shallower than the first depth, The third portion of the first depth, The first, second, and third portions are provided on the second semiconductor region such that the second portion is provided between the first and third portions. At the aforementioned terminal section, The fourth portion is provided on the third semiconductor region, and the second semiconductor portion is provided on the third semiconductor region. The third semiconductor portion of the second conductivity type, The third semiconductor section is, A first regional portion provided on the first portion, the second portion and the third portion, A second region portion is provided on the aforementioned fourth portion, The aforementioned third semiconductor section having, A fourth semiconductor portion of the first conductivity type provided on the first portion, the first region portion, and the third portion, A third electrode is provided between the first portion and the second electrode, A semiconductor device equipped with [the necessary components].

2. The semiconductor device according to claim 1, wherein the third semiconductor region and the second electrode are in Schottky contact.

3. Furthermore, in the second direction, a connecting portion is provided between the cell portion and the terminal portion, The second semiconductor portion further includes a fifth portion, The fifth portion is provided on the first semiconductor region in the connection portion, The semiconductor device according to claim 2, wherein at least a portion of the fifth portion has a third depth that is deeper than the first depth.

4. The semiconductor device according to claim 3, wherein the fifth portion includes a gap.

5. Further comprising a first insulating section, The semiconductor device according to claim 1, wherein at least a portion of the first insulating portion is provided between the first portion and the third electrode.

6. The impurity concentration of the first conductivity type in the fourth semiconductor portion is higher than the impurity concentration of the first conductivity type in the first semiconductor portion. The semiconductor device according to claim 1, wherein the impurity concentration of the second conductivity type in the third semiconductor portion is higher than the impurity concentration of the second conductivity type in the second semiconductor portion.

7. The semiconductor device according to claim 1, wherein a part of the third semiconductor portion and a part of the fourth semiconductor portion are in ohmic contact with the second electrode.

8. The semiconductor device according to claim 1, wherein the first depth and the second depth correspond to positions in the first direction with reference to the position of the first electrode in the first direction.

9. The semiconductor device according to claim 1, wherein the first semiconductor portion, the second semiconductor portion, the third semiconductor portion, and the fourth semiconductor portion include SiC.

Images