Substrate processing apparatus, substrate processing method, and storage medium

Abstract

This substrate processing device comprises: a processing tank; a lid body; a chemical solution supply unit; a pressurization unit; and a control unit. The processing tank has an opening in the upper part thereof, and in the processing tank, a substrate is immersed in a chemical solution and processed. The lid body is configured so as to be able to seal the opening of the processing tank. The chemical solution supply unit supplies the chemical solution to the processing tank. The pressurization unit pressurizes the chemical solution on the upstream side of the chemical solution supply unit. The control unit controls the aforementioned units. The control unit causes: the substrate to be immersed in the chemical solution stored in the processing tank; the lid body to seal the opening of the processing tank; the chemical solution pressurized by the pressurization unit to be supplied from the chemical solution supply unit to the processing tank; and the chemical solution stored in the processing tank to be pressurized.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

Background Art

[0002] Conventionally, a technique for processing a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water is known (see Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently processing a substrate with a chemical solution.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a processing tank, a lid, a chemical solution supply unit, a pressurizing unit, and a control unit. The processing tank has an opening at the upper part and processes a substrate by immersing it in a chemical solution. The lid is configured to be able to seal the opening of the processing tank. The chemical solution supply unit supplies a chemical solution to the processing tank. The pressurizing unit pressurizes the chemical solution on the upstream side of the chemical solution supply unit. The control unit controls each unit. The control unit immerses a substrate in the chemical solution stored in the processing tank, seals the opening of the processing tank with the lid, and supplies the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank to pressurize the chemical solution stored in the processing tank.

Effects of the Invention

[0006] According to the present disclosure, a substrate can be efficiently processed with a chemical solution.

Brief Description of the Drawings

[0007] [Figure 1] Figure 1 shows the configuration of a substrate processing apparatus according to an embodiment. [Figure 2] Figure 2 shows the peripheral configuration of the lid according to the embodiment. [Figure 3] Figure 3 shows the peripheral configuration of the lid according to the embodiment. [Figure 4] Figure 4 shows the peripheral configuration of the lid according to the embodiment. [Figure 5] Figure 5 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the embodiment. [Figure 6] Figure 6 shows the configuration of a substrate processing apparatus according to a modified example 1 of the embodiment. [Figure 7] Figure 7 is a cross-sectional view of the processing tank shown in Figure 6, viewed from the positive X-axis direction to the negative X-axis direction. [Figure 8] Figure 8 shows an example of the relationship between the wavelength (nm) of light irradiated onto the wafer from the light irradiation unit and the absorption rate (%) of the light by the wafer. [Figure 9] Figure 9 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the modified embodiment 1. [Figure 10] Figure 10 shows the configuration of a substrate processing apparatus according to a modified example 2 of the embodiment. [Figure 11] Figure 11 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus according to the modified embodiment 2. [Modes for carrying out the invention]

[0008] The embodiments for implementing the substrate processing apparatus, substrate processing method, and storage medium according to this disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. However, this disclosure is not limited by these embodiments.

[0009] In addition, in the embodiments described below, expressions such as "constant", "orthogonal", "perpendicular", or "parallel" may be used, but these expressions do not necessarily require strict "constant", "orthogonal", "perpendicular", or "parallel". That is, each of the above expressions is assumed to allow deviations such as manufacturing accuracy and installation accuracy.

[0010] In addition, in each of the drawings referred to below, in order to make the description easier to understand, an orthogonal coordinate system may be shown that defines the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other, with the positive Z-axis direction being the vertically upward direction. Also, the rotation direction around the vertical axis may be referred to as the θ direction.

[0011] Techniques for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water are known. However, in the above-described conventional techniques, there is room for further improvement in efficiently treating substrates with chemical solutions such as ozone water.

[0012] Therefore, a technique that can overcome the above problems and efficiently treat substrates with chemical solutions is expected.

[0013] <Configuration of Substrate Processing Apparatus> The configuration of the substrate processing apparatus according to the embodiment will be described with reference to FIG. 1. FIG. 1 is a diagram showing the configuration of the substrate processing apparatus according to the embodiment.

[0014] As shown in FIG. 1, the substrate processing apparatus 1 includes a processing liquid generation unit 10 and a substrate processing unit 30. The processing liquid generation unit 10 sequentially generates various processing liquids such as ozone water (an example of a chemical solution), a rinse liquid, and a cleaning liquid. The substrate processing unit 30 performs a series of substrate processes including ozone water treatment, rinse treatment, and cleaning treatment on the wafer W using the various processing liquids sequentially generated in a single processing tank 31.

[0015] In addition, the substrate processing apparatus 1 includes a processing liquid supply path 21 provided from the processing liquid generation unit 10 to the substrate processing unit 30. Such a processing liquid supply path 21 connects between the DIW supply source 22a of the processing liquid generation unit 10 and the substrate processing unit 30.

[0016] The processing liquid supply path 21 is configured by connecting a first supply path 22, a mixer 23, and a second supply path 24 in this order.

[0017] The first supply path 22 supplies DIW (DeIonized Water) as a raw material for ozone water, DIW as a rinse liquid, and DIW as a raw material for SC1 (an aqueous solution containing ammonia and hydrogen peroxide) as a cleaning liquid to the mixer 23. The first supply path 22 includes, in order from the upstream side, a DIW supply source 22a, a deaeration module 22b, a cooler 22c, a valve 22d, a constant pressure valve 22e, and a flow meter 22f.

[0018] The DIW supply source 22a is, for example, a tank that stores DIW. The deaeration module 22b removes dissolved gases such as nitrogen dissolved in the DIW supplied from the DIW supply source 22a. By removing the dissolved gas contained in the DIW with such a deaeration module 22b, ozone gas can be efficiently dissolved in the DIW.

[0019] The cooler 22c cools the DIW flowing through the first supply path 22 to a given temperature (for example, 10°C to 20°C). By cooling the DIW with such a cooler 22c, ozone gas can be efficiently dissolved in the DIW.

[0020] The constant pressure valve 22e adjusts the flow rate of the DIW supplied to the mixer 23 based on the flow rate of the DIW measured by the flow meter 22f. That is, the constant pressure valve 22e performs feedback control based on the flow rate of the DIW measured by the flow meter 22f.

[0021] The mixer 23 is connected to the first supply path 22 on the upstream side and to the second supply path 24 on the downstream side. Also, an acid-based chemical liquid supply path 26 is connected to the mixer 23.

[0022] The acidic chemical supply channel 26 supplies acidic chemicals such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, and sulfuric acid to the mixer 23. In this embodiment, the concentration of ozone dissolved in the DIW can be increased by supplying an acidic chemical to the DIW and adjusting its pH to acidic.

[0023] The acid-based chemical supply line 26 includes, in order from upstream, an acid-based chemical supply source 26a, a valve 26b, a constant pressure valve 26c, and a flow meter 26d. The acid-based chemical supply source 26a is, for example, a cabinet or circulation line capable of generating the acid-based chemical.

[0024] The constant pressure valve 26c adjusts the flow rate of the acidic chemical solution supplied to the mixer 23 based on the flow rate of the acidic chemical solution measured by the flow meter 26d. In other words, the constant pressure valve 26c performs feedback control based on the flow rate of the acidic chemical solution measured by the flow meter 26d.

[0025] An ozone gas supply line 41 is connected downstream of the connection point between the mixer 23 and the acid-based chemical supply line 26.

[0026] The ozone gas supply channel 41 supplies ozone gas to the mixer 23. The ozone gas supply channel 41 has, in order from the upstream side, an ozone gas generation unit 42 and a valve 43. A check valve may be provided between the valve 43 and the mixer 23.

[0027] The ozone gas generation unit 42 generates ozone gas from oxygen gas using known techniques. The oxygen gas that serves as the raw material for ozone gas is supplied to the ozone gas generation unit 42 from the oxygen gas supply passage 44. The oxygen gas supply passage 44 has, in order from upstream, an oxygen gas supply source 44a, a constant pressure valve 44b, and a valve 44c. The oxygen gas supply source 44a is, for example, a tank for storing oxygen gas.

[0028] Although not shown in Figure 1, the ozone gas generation unit 42 is connected to a cooling water supply unit that supplies cooling water and a cooling water discharge unit that discharges the used cooling water.

[0029] Downstream from the connection point between the mixer 23 and the ozone gas supply line 41, an ammonia water supply line 51 is connected.

[0030] The ammonia water supply channel 51 supplies ammonia water, which is the raw material for SC1 as a cleaning solution, to the mixer 23. The ammonia water supply channel 51 has, in order from upstream, an ammonia water supply source 51a, a valve 51b, a constant pressure valve 51c, and a flow meter 51d. The ammonia water supply source 51a is, for example, a tank for storing ammonia water.

[0031] The constant pressure valve 51c adjusts the flow rate of ammonia water supplied to the mixer 23 based on the flow rate of ammonia water measured by the flow meter 51d. In other words, the constant pressure valve 51c performs feedback control based on the flow rate of ammonia water measured by the flow meter 51d.

[0032] A hydrogen peroxide water supply channel 52 is connected downstream of the connection point with the ammonia water supply channel 51 in the mixer 23.

[0033] The hydrogen peroxide supply channel 52 supplies hydrogen peroxide, which is the raw material for SC1 as a cleaning solution, to the mixer 23. The hydrogen peroxide supply channel 52 has, in order from upstream, a hydrogen peroxide supply source 52a, a valve 52b, a constant pressure valve 52c, and a flow meter 52d. The hydrogen peroxide supply source 52a is, for example, a tank for storing hydrogen peroxide.

[0034] The constant pressure valve 52c adjusts the flow rate of hydrogen peroxide supplied to the mixer 23 based on the flow rate of hydrogen peroxide measured by the flow meter 52d. In other words, the constant pressure valve 52c performs feedback control based on the flow rate of hydrogen peroxide measured by the flow meter 52d.

[0035] Mixer 23 selectively mixes other chemicals or gases with the DIW supplied from the first supply channel 22 to sequentially generate various treatment solutions. Specifically, mixer 23 can generate ozonated water by mixing the DIW supplied from the first supply channel 22 with an acidic chemical supplied from the acidic chemical supply channel 26 and ozone gas supplied from the ozone gas supply channel 41. Mixer 23 can also generate SC1 by mixing the DIW supplied from the first supply channel 22 with ammonia water supplied from the ammonia water supply channel 51 and hydrogen peroxide water supplied from the hydrogen peroxide water supply channel 52. Furthermore, mixer 23 can also allow the DIW supplied from the first supply channel 22 to flow downstream as a rinsing solution. A second supply channel 24 is connected to the downstream side of this mixer 23.

[0036] The second supply channel 24 is located between the mixer 23 of the processing liquid generation unit 10 and the substrate processing unit 30, and supplies various processing liquids supplied from the mixer 23 to the first nozzle 33 of the substrate processing unit 30, which will be described later. Specifically, the second supply channel 24 sequentially supplies ozonated water, DIW as a rinsing liquid, and SC1 as a cleaning liquid to the first nozzle 33.

[0037] The second supply channel 24 includes, in order from upstream, a constant pressure valve 24a, a filter 24b, a flow meter 24c, and a valve 24d. The constant pressure valve 24a adjusts the flow rate of the treated liquid flowing through the second supply channel 24 based on the flow rate of ozonated water measured by the flow meter 24c. In other words, the constant pressure valve 24a performs feedback control based on the flow rate of the treated liquid measured by the flow meter 24c.

[0038] The filter 24b removes contaminants such as particles contained in the various processing liquids flowing through the second supply channel 24.

[0039] Upstream of the constant pressure valve 24a in the second supply channel 24, the third supply channel 60 branches off from the second supply channel 24 and connects to the second nozzle 34 of the substrate processing unit 30, which will be described later. The third supply channel 60 supplies ozonated water to the second nozzle 34.

[0040] The third supply channel 60 includes, in order from the upstream side, a valve 61, a filter 62, a pump 63 (an example of a pressurizing unit), and a flow meter 64. The filter 62 removes contaminants such as particles contained in the ozonated water flowing through the third supply channel 60.

[0041] Pump 63 pressurizes the ozonated water flowing through the third supply channel 60 to a given pressure higher than atmospheric pressure. The pressurized ozonated water is supplied to the second nozzle 34 via the third supply channel 60. In this way, by pressurizing the ozonated water, ozonated water with a given ozone concentration can be efficiently produced.

[0042] This is because the mole fraction M of ozone gas dissolved in the raw material liquid DIW is estimated to follow Henry's Law, shown in equation (1) below, and according to Henry's Law, the mole fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas. M=H -1 ·P ···(1) H: Henry's constant

[0043] Here, the "given ozone concentration" refers to, for example, the ozone concentration that can remove (peel off) the resist film formed on the wafer W, and is in the range of 500 mg / L to 1500 mg / L. The "given pressure" refers to, for example, the pressure that can maintain the ozone concentration of the ozonated water at the given ozone concentration, and is in the range of 0.6 MPa to 2.0 MPa.

[0044] The substrate processing unit 30 comprises a processing tank 31, a holding unit 32, a first nozzle 33 (an example of another chemical supply unit), a second nozzle 34 (an example of a chemical supply unit), a first liquid discharge unit 35 (an example of a chemical discharge unit), a second liquid discharge unit 36, and a lid 37.

[0045] The processing tank 31 is a box-shaped tank with an opening 31a at the top, and various processing liquids are sequentially stored inside. Specifically, ozonated water, DIW as a rinsing liquid, or SC1 as a cleaning liquid are sequentially stored in the processing tank 31. One lot of wafers W, arranged in an upright position, are immersed in the processing liquid stored in the processing tank 31.

[0046] A liquid receiving container (not shown) is placed outside the processing tank 31, surrounding the processing tank 31. The liquid receiving container receives the processed liquid flowing out of the opening 31a of the processing tank 31.

[0047] The holding unit 32 holds multiple wafers W that form a lot in an upright position, arranged front to back. The holding unit 32 is fixed in an immersion position inside the processing tank 31 where the entire wafer W is immersed in the processing liquid. The holding unit 32 can receive multiple wafers W from a substrate transport device that transports multiple wafers W and place them in the immersion position.

[0048] The first nozzle 33 is positioned inside the processing tank 31 and supplies ozonated water, DIW as a rinsing solution, or SC1 as a cleaning solution to the processing tank 31. The first nozzle 33 extends along the alignment direction (Y-axis direction) of the multiple wafers W and discharges ozonated water, DIW as a rinsing solution, or SC1 as a cleaning solution from multiple discharge ports provided along the alignment direction of the multiple wafers W.

[0049] The first nozzle 33 is connected to the second supply passage 24 of the processing liquid supply passage 21, and discharges ozonated water, DIW as a rinsing liquid, or SC1 as a cleaning liquid supplied from the second supply passage 24 through multiple discharge ports.

[0050] The first nozzle 33 can supply ozonated water to the treatment tank 31 at a flow rate greater than that supplied to the treatment tank 31 from the second nozzle 34. For this reason, the discharge port of the first nozzle 33 has a larger opening diameter than the discharge port of the second nozzle 34.

[0051] The second nozzle 34 is positioned below the first nozzle 33 inside the processing tank 31 and supplies pressurized ozonated water to the processing tank 31. The second nozzle 34 extends along the alignment direction (Y-axis direction) of the multiple wafers W and discharges pressurized ozonated water from multiple discharge ports provided along the alignment direction of the multiple wafers W.

[0052] The second nozzle 34 is connected to the third supply passage 60 of the processing liquid supply passage 21 and discharges pressurized ozonated water supplied from the third supply passage 60 through multiple supply ports.

[0053] The first liquid discharge unit 35 discharges ozonated water from the processing tank 31 to the drain DR when processing the wafer W with pressurized ozonated water. The first liquid discharge unit 35 has a discharge passage 35a, a back pressure valve 35c, a flow meter 35d, and a valve 35e.

[0054] The discharge passage 35a is connected to the processing tank 31 at a position above the wafer W and below the opening 31a. The discharge passage 35a is equipped with a pressure sensor 35b, a back pressure valve 35c, a flow meter 35d, and a valve 35e, in order from the upstream side, relative to the connection position with the processing tank 31.

[0055] The pressure sensor 35b is located upstream of the back pressure valve 35c and the flow meter 35d in the discharge passage 35a and detects the pressure of the ozonated water flowing through the discharge passage 35a. The value detected by the pressure sensor 35b is output to the control unit 71, which will be described later. The back pressure valve 35c adjusts the flow rate of the ozonated water flowing through the discharge passage 35a based on the flow rate of the ozonated water measured by the flow meter 35d. In other words, the back pressure valve 35c performs feedback control based on the flow rate of the ozonated water measured by the flow meter 35d.

[0056] The second liquid discharge unit 36 ​​discharges each processing liquid to the drain DR when switching between the processing liquids used in the ozone water treatment, rinsing treatment, and washing treatment of the wafer W. The second liquid discharge unit 36 ​​has a discharge passage 36a and a valve 36b. The discharge passage 36a is connected to the bottom of the processing tank 31.

[0057] The lid 37 is configured to seal the opening 31a of the processing tank 31. Details of the lid 37 will be described later.

[0058] Furthermore, the substrate processing apparatus 1 further includes a control device 70. The control device 70 controls the operation of each part of the substrate processing apparatus 1. The control device 70 is, for example, a computer and comprises a control unit 71 and a storage unit 72.

[0059] The control unit 71 is a controller. The control unit 71 is implemented, for example, by a CPU (Central Processing Unit) or MPU (Micro Processing Unit) executing various programs stored in the internal memory of the control device 70 using RAM as the working area. Alternatively, the control unit 71 may be implemented by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or FPGA (Field Programmable Gate Array).

[0060] The control unit 71 has a computer-readable storage medium. The storage medium stores the program that controls various processes performed in the substrate processing device 1. The program may have been stored on a computer-readable storage medium or may have been installed on the control unit 71's storage medium from another storage medium. Examples of computer-readable storage mediums include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0061] The memory unit 72 is implemented by, for example, semiconductor memory elements such as RAM (Random Access Memory) or flash memory, or by storage devices such as hard disks or optical discs.

[0062] <Peripheral structure of the lid> Figures 2 to 4 show the peripheral configuration of the lid 37 according to the embodiment. Figure 2 shows the lid 37 in an open position that opens the opening 31a of the processing tank 31. Figure 3 shows the lid 37 in a closed position that covers the opening 31a of the processing tank 31. Figure 4 shows the lid 37 pressed against the opening 31a of the processing tank 31.

[0063] As shown in Figures 2 to 4, the lid 37 is connected to a movable mechanism 371, which allows it to move between an open position and a closed position.

[0064] The processing tank 31 has an upper end portion 311 on the upper part of its side wall that protrudes above the opening 31a. The upper end portion 311 is thinner than the rest of the side wall and forms a counterbore at the location of the opening 31a that is larger in diameter than the opening 31a and communicates with the opening 31a. A lid 37, which is in a closed position, is housed in this counterbore portion of the upper end portion 311.

[0065] Furthermore, the upper end portion 311 has multiple (in this case, two) through holes 31b that penetrate the inner wall surface and the outer wall surface of the upper end portion 311.

[0066] The substrate processing unit 30 is equipped with a plurality (in this case, two) of locking members 38. The locking members 38 are provided so as to be insertable and removable from a plurality of insertion holes 31b in the upper end portion 311. Each locking member 38 is connected to a moving mechanism 381 that moves the locking member 38 along the horizontal direction.

[0067] With the wafer W loaded into the processing tank 31, the control unit 71 moves the lid 37 from the open position to the closed position using the moving mechanism 371. This seals the opening 31a of the processing tank 31 with the lid 37 (see Figure 3).

[0068] Furthermore, the control unit 71 moves the two locking members 38 using the moving mechanism 381, thereby inserting each locking member 38 into the insertion hole 31b at the upper end portion 311 (see Figure 4).

[0069] The locking member 38 presses the lid 37 toward the opening 31a against the internal pressure generated by the pressurized ozonated water supplied to the processing tank 31. This allows the lid 37 to maintain a sealed state over the opening 31a of the processing tank 31.

[0070] <Procedure for processing circuit boards> Next, the substrate processing procedure according to the embodiment will be described with reference to Figure 5. Figure 5 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to the embodiment. Each processing procedure shown in Figure 5 is performed according to the control of the control unit 71.

[0071] Before the start of the series of substrate processing shown in Figure 5, no processing liquid is stored in the processing tank 31. In other words, before the start of the series of substrate processing, the processing tank 31 is empty.

[0072] As shown in Figure 5, the substrate processing apparatus 1 first supplies ozonated water from the first nozzle 33 (step S101). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 24d, 26b, 43, and 44c. As a result, the ozonated water generated in the mixer 23 is supplied to the first nozzle 33 via the second supply passage 24. The ozonated water is then discharged from the discharge port of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generation unit 10 to close valves 22d, 24d, 26b, 43, and 44c. As a result, the supply of ozonated water from the first nozzle 33 is stopped.

[0073] Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S102). Specifically, the control unit 71 controls a substrate transport device (not shown) that transports the wafer W, and transfers the wafer W to a holding unit 32 located inside the processing tank 31. As a result, the wafer W is placed in an immersion position within the processing tank 31. That is, the wafer W is immersed in the ozonated water stored in the processing tank 31.

[0074] Next, the control unit 71 controls the moving mechanism 371 to seal the opening 31a of the processing tank 31 with the lid 37 (step S103). Then, the control unit 71 controls the moving mechanism 381 to press the lid 37 toward the opening 31a with the locking member 38.

[0075] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S104). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open valves 22d, 26b, 43, 44c, and 61, and controls the pump 63 to pressurize the ozonated water flowing through the third supply passage 60. As a result, the ozonated water generated in the mixer 23 is pressurized in the third supply passage 60, and this pressurized ozonated water is supplied to the second nozzle 34 via the third supply passage 60. Then, the pressurized ozonated water is discharged from the discharge port of the second nozzle 34 into the processing tank 31, thereby pressurizing the ozonated water stored in the processing tank 31.

[0076] As described above, in the substrate processing apparatus 1 according to this embodiment, the ozonated water in the processing tank 31 is pressurized by pressurized ozonated water while the opening 31a of the processing tank 31 is sealed with a lid 37. This makes it possible to suppress the decrease in the ozone concentration of the ozonated water around the wafer W due to a decrease in the pressure of the ozonated water in the processing tank 31.

[0077] In other words, in this embodiment, by increasing the pressure of the ozonated water in the processing tank 31, the concentration of ozonated water around the wafer W can be maintained, thus enabling efficient processing of the wafer W with ozonated water.

[0078] Next, the control unit 71 maintains the discharge rate of ozonated water from the first liquid discharge unit 35 at a given value (step S105). Specifically, the control unit 71 opens the valve 35e and controls the valve opening of the back pressure valve 35c to a first valve opening so that the measured value of the flow meter 35d is maintained at a given value. The first valve opening is the valve opening that restricts the valve opening of the back pressure valve 35c.

[0079] In other words, in the substrate processing apparatus 1 according to this embodiment, when pressurizing the ozone water in the processing tank 31 with pressurized ozone water, the back pressure valve 35c is throttled to suppress the increase in the amount of ozone water discharged from the first liquid discharge section 35 caused by the increase in the liquid pressure of the ozone water in the processing tank 31.

[0080] This suppresses the decrease in the liquid pressure of the ozonated water in the processing tank 31, making it more difficult for the ozone in the ozonated water to decompose. Therefore, according to this embodiment, wafers W can be efficiently processed with high-concentration ozonated water.

[0081] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S106). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when a predetermined amount of time has elapsed since the pressurized ozonated water was supplied to the treatment tank 31 in step S104.

[0082] If the ozonated water treatment of the wafer W is not completed in step S106 (step S106No), the control unit 71 returns the process to step S104.

[0083] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S106 Yes), the control unit 71 stops supplying pressurized ozonated water from the second nozzle 34 (step S107).

[0084] Next, the control unit 71 controls the valve opening of the back pressure valve 35c to a second valve opening that is greater than the first valve opening (step S108). For example, the control unit 71 fully opens the back pressure valve 35c. As a result, the ozonated water stored in the treatment tank 31 is depressurized.

[0085] In this embodiment, the ozonated water in the treatment tank 31 is depressurized prior to the subsequent removal of the lid 37 from the treatment tank 31. This allows the lid 37 to be removed while the internal pressure from the ozonated water in the treatment tank 31 to the lid 37 is relieved, thus preventing the ozonated water from scattering from the treatment tank 31.

[0086] Next, the control unit 71 determines whether the measured value of the pressure sensor 35b has fallen below a specified value (step S109). The control unit 71 repeats the determination process in step S109 until the measured value of the pressure sensor 35b falls below a specified value (step S109No).

[0087] On the other hand, in step S109, if it is determined that the measured value of the pressure sensor 35b has fallen below a specified value (step S109 Yes), the control unit 71 controls the moving mechanism 381 to release the locking member 38 from pressing against the lid 37. Subsequently, the control unit 71 controls the moving mechanism 371 to detach the lid 37 from the opening 31a of the processing tank 31 (step S110).

[0088] Subsequently, the control unit 71 opens the valve 36b for a predetermined time to discharge ozonated water from the treatment tank 31.

[0089] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S111). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes ozonated water from the wafer W.

[0090] Subsequently, the control unit 71 closes valves 22d and 24d, and opens valve 36b for a predetermined time to discharge DIW from the processing tank 31.

[0091] Next, the substrate processing apparatus 1 performs a cleaning process on the wafer W (step S112). Specifically, the control unit 71 opens valves 22d, 24d, 51b, and 52b. As a result, SC1, which is used as a cleaning solution, is stored in the processing tank 31, and the wafer W is immersed in SC1. This removes foreign matter such as particles from the wafer W.

[0092] Subsequently, the control unit 71 closes valves 22d, 24d, 51b, and 52b, and opens valve 36b for a predetermined time to discharge SC1 from the processing tank 31.

[0093] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S113). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes SC1 from the wafer W.

[0094] Next, the control unit 71 controls a substrate transport device (not shown) to remove the wafer W from the processing tank 31 (step S114), thereby completing the series of substrate processing operations.

[0095] <Example 1> Next, a modified example of the embodiment will be described with reference to Figures 6 to 11. Figure 6 is a diagram showing the configuration of the substrate processing apparatus 1 according to modified example 1 of the embodiment. Figure 7 is a cross-sectional view of the processing tank 31 shown in Figure 6, viewed from the positive X-axis direction to the negative X-axis direction. For ease of understanding, the first nozzle 33 is omitted in Figure 7.

[0096] As shown in Figures 6 and 7, the substrate processing unit 30 of the substrate processing apparatus 1 according to the modified example 1 includes a holding unit 32A and a light irradiation unit 80.

[0097] The holding unit 32A holds one wafer W in an upright position. The holding unit 32A is fixed inside the processing tank 31 and holds the wafer W in an immersion position where the entire wafer W is submerged in the processing liquid. The holding unit 32A can receive one wafer W from a substrate transport device (not shown) that transports one wafer W and place it in the immersion position.

[0098] The light irradiation unit 80 is provided in the processing tank 31. The light irradiation unit 80 is a light source such as a light-emitting diode (LED). The light irradiation unit 80 is provided in the processing tank 31 facing the main surface of the wafer W. The main surface of the wafer W is, for example, the surface on which the resist film of the wafer W is formed. The light irradiation unit 80 may also be provided in the processing tank 31 facing at least one of the main surface of the wafer W and the back surface opposite the main surface. The light irradiation unit 80 irradiates the wafer W with light of a wavelength that can penetrate the ozonated water.

[0099] In this context, there is a conventional technique of treating wafers with ozonated water while irradiating them with ultraviolet light (see, for example, Japanese Patent Publication No. 2002-280339).

[0100] However, with the technology described above, there was a risk that the ultraviolet light irradiated onto the wafer would be absorbed by the ozonated water, causing its temperature to rise. When the temperature of the ozonated water rises, the ozone may decompose (i.e., the ozonated water becomes inactive), and the concentration of ozone in the ozonated water may decrease.

[0101] Therefore, in the substrate processing apparatus 1 according to Modification 1, the wafer W is heated by irradiating it with light of a wavelength that can penetrate the ozonated water using a light irradiation unit 80 provided in the processing tank 31. This reduces the temperature rise of the ozonated water compared to when ultraviolet light is irradiated onto the wafer W. Thus, the wafer W can be heated to a given temperature while suppressing the decrease in ozone concentration caused by the rise in temperature of the ozonated water. As a result, the substrate processing apparatus 1 according to Modification 1 allows for efficient processing of the wafer W with ozonated water.

[0102] Figure 8 shows an example of the relationship between the wavelength (nm) of light irradiated onto the wafer W from the light irradiation unit 80 and the light absorption rate (%) of the wafer W. As shown in Figure 8, when the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is 350 nm or more and 1100 nm or less, the light absorption rate of the wafer W can be increased to approximately 40% or more. However, when the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is greater than 600 nm, the light absorption rate of the ozonated water increases and the temperature of the ozonated water around the wafer W rises. Therefore, from the viewpoint of selectively heating the surface of the wafer W while suppressing the temperature rise of the ozonated water around the wafer W, it is preferable that the wavelength of light irradiated onto the wafer W from the light irradiation unit 80 is 350 nm or more and 600 nm or less. Hereinafter, light with a wavelength of 350 nm or more and 600 nm or less will be referred to as "specific wavelength light". The light irradiation unit 80 irradiates the wafer W with specific wavelength light.

[0103] Returning to the explanation of Figure 7, the processing tank 31 has a light-transmitting portion 31c on one of the two side walls facing the main surface and back surface of the wafer W. The light-transmitting portion 31c is in contact with ozonated water and transmits light of a specific wavelength. The light-transmitting portion 31c is formed of a material that can transmit light of a specific wavelength and has high corrosion resistance to processing liquids such as ozonated water. The light-transmitting portion 31c has higher corrosion resistance to processing liquids such as ozonated water than other parts of the processing tank 31. For example, quartz can be used as the material for forming the light-transmitting portion 31c. The light irradiation portion 80 is positioned on the outer surface 31c1 of the light-transmitting portion 31c opposite to the inner surface that is in contact with the ozonated water.

[0104] In this way, by positioning the light irradiation unit 80 on the outer surface 31c1 of the light-transmitting portion 31c provided on one of the two side walls of the processing tank 31 that face the main surface and back surface of the wafer W, specific wavelength light from the light irradiation unit 80 can be efficiently irradiated onto the main surface of the wafer W. Therefore, the main surface of the wafer W can be efficiently heated.

[0105] Figure 9 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to the modified embodiment 1. Each processing step shown in Figure 9 is performed according to the control of the control unit 71. Steps S101 to S114 in Figure 9 are the same as steps S101 to S114 in Figure 5, so a detailed explanation is omitted.

[0106] When the opening 31a of the processing tank 31 is sealed with the lid 37 (step S103), the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the ozonated water, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S201).

[0107] Next, the substrate processing apparatus 1 supplies pressurized ozonated water from the second nozzle 34 (step S104). This pressurizes the ozonated water stored in the processing tank 31.

[0108] Thus, in Modification 1, the wafer W is heated by irradiating it with light of a specific wavelength while the ozonated water stored in the processing tank 31 is under pressure. This makes it possible to heat the wafer W to a given temperature while suppressing the decrease in ozone concentration caused by the temperature rise of the ozonated water. As a result, the substrate processing apparatus 1 according to Modification 1 can process the wafer W more efficiently with ozonated water.

[0109] Next, the control unit 71 maintains the amount of ozonated water discharged from the first liquid discharge unit 35 at a given value (step S105).

[0110] Next, the control unit 71 determines whether or not the ozonated water treatment of the wafer W is complete (step S106). For example, the control unit 71 may terminate the ozonated water treatment of the wafer W when a predetermined time has elapsed since the start of irradiation with a specific wavelength of light in step S201.

[0111] If the ozonated water treatment of the wafer W is not completed in step S106 (step S106No), the control unit 71 returns the process to step S201.

[0112] On the other hand, if it is determined that the ozonated water treatment of the wafer W is complete (step S106 Yes), the control unit 71 stops the irradiation of light of a specific wavelength (step S202) and proceeds to step S107.

[0113] <Modification 2> In the above embodiment and Modification 1, an example was described in which the wafer W is treated with ozonated water, which is an example of a chemical solution. However, the wafer W may be treated with a chemical solution other than ozonated water. Therefore, in Modification 2, an example will be described in which the wafer W is treated with a chemical solution other than ozonated water.

[0114] Figure 10 shows the configuration of the substrate processing apparatus 1 according to the second modified embodiment. As shown in Figure 10, the substrate processing apparatus 1 according to the second modified embodiment differs from the substrate processing apparatus 1 according to the first modified embodiment (see Figure 6) in that it does not have an acid-based chemical supply passage 26 and an ozone gas supply passage 41. Furthermore, the substrate processing apparatus 1 according to the second modified embodiment differs from the substrate processing apparatus 1 according to the first modified embodiment (see Figure 6) in that it has a chemical supply passage 27.

[0115] The chemical solution supply channel 27 is connected to the mixer 23 and supplies a chemical solution different from ozonated water to the mixer 23. In the modified example 2, the chemical solution different from ozonated water is simply referred to as "chemical solution". Such chemical solutions include, for example, SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), hydrogen peroxide (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

[0116] The chemical supply line 27 includes, in order from upstream, a chemical supply source 27a, a valve 27b, a constant pressure valve 27c, and a flow meter 27d. The chemical supply source 27a is, for example, a cabinet or circulation line capable of generating the chemical solution.

[0117] The constant pressure valve 27c adjusts the flow rate of the chemical solution supplied to the mixer 23 based on the flow rate of the chemical solution measured by the flow meter 27d. In other words, the constant pressure valve 27c performs feedback control based on the flow rate of the chemical solution measured by the flow meter 27d.

[0118] In the substrate processing apparatus 1 according to Modification 2, the components other than the chemical solution supply path 27 are the same as those of the substrate processing apparatus 1 according to Modification 1 (see Figure 6) by replacing "ozonated water" with "chemical solution," so their explanation is omitted.

[0119] Figure 11 is a flowchart showing the substrate processing procedure performed by the substrate processing apparatus 1 according to a modified example of the embodiment 2. Each processing step shown in Figure 11 is performed according to the control of the control unit 71. Steps S112 to S114 in Figure 11 are the same as steps S112 to S114 in Figure 9, so a detailed explanation is omitted.

[0120] Prior to the start of the series of substrate processing shown in Figure 11, no processing liquid is stored in the processing tank 31. In other words, prior to the start of the series of substrate processing, the processing tank 31 is empty.

[0121] As shown in Figure 11, the substrate processing apparatus 1 first supplies the chemical solution from the first nozzle 33 (step S301). Specifically, the control unit 71 controls the processing liquid generation unit 10 to open the valve 27b. As a result, the chemical solution is supplied to the first nozzle 33 via the second supply passage 24. The chemical solution is then discharged from the discharge port of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generation unit 10 to close the valve 27b. As a result, the supply of the chemical solution from the first nozzle 33 is stopped.

[0122] Next, the substrate processing apparatus 1 loads the wafer W into the processing tank 31 (step S302). Specifically, the control unit 71 controls a substrate transport device (not shown) that transports the wafer W and transfers the wafer W to the holding unit 32A located inside the processing tank 31. As a result, the wafer W is placed in the immersion position within the processing tank 31. That is, the wafer W is immersed in the chemical solution stored in the processing tank 31.

[0123] Next, the control unit 71 controls the moving mechanism 371 to seal the opening 31a of the processing tank 31 with the lid 37 (step S303). Then, the control unit 71 controls the moving mechanism 381 to press the lid 37 toward the opening 31a with the locking member 38.

[0124] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can penetrate the chemical solution, i.e., light of a specific wavelength, and heat the wafer W to a given temperature (step S304).

[0125] Next, the substrate processing apparatus 1 supplies pressurized chemical solution from the second nozzle 34 (step S305). This pressurizes the chemical solution stored in the processing tank 31.

[0126] Thus, in Modification 2, the wafer W is heated by irradiating it with light of a specific wavelength while the chemical solution stored in the processing tank 31 is under pressure. This makes it possible to heat the wafer W to a given temperature while suppressing the decrease in concentration caused by the temperature rise of the chemical solution. As a result, the substrate processing apparatus 1 according to Modification 2 can process the wafer W more efficiently with the chemical solution.

[0127] Next, the control unit 71 maintains the amount of chemical solution discharged from the first liquid discharge unit 35 at a given value (step S306).

[0128] Next, the control unit 71 determines whether or not the chemical treatment of the wafer W has been completed (step S307). For example, the control unit 71 may terminate the chemical treatment of the wafer W when a predetermined time has elapsed since the irradiation of a specific wavelength of light was started in step S304.

[0129] If the chemical treatment of the wafer W is not completed in step S307 (step S307No), the control unit 71 returns the process to step S304.

[0130] On the other hand, if it is determined that the chemical treatment of the wafer W is complete (step S307 Yes), the control unit 71 stops the irradiation of light of a specific wavelength (step S308) and stops the supply of pressurized chemical solution from the second nozzle 34 (step S309).

[0131] Next, the control unit 71 controls the valve opening of the back pressure valve 35c to a second valve opening that is greater than the first valve opening (step S310). For example, the control unit 71 fully opens the back pressure valve 35c. This reduces the pressure of the chemical solution stored in the treatment tank 31.

[0132] Next, the control unit 71 determines whether the measured value of the pressure sensor 35b has fallen below a specified value (step S311). The control unit 71 repeats the determination process in step S311 until the measured value of the pressure sensor 35b falls below a specified value (step S311No).

[0133] On the other hand, if in step S311 the control unit 71 determines that the measured value of the pressure sensor 35b has fallen below a specified value (step S311Yes), the control unit 71 controls the moving mechanism 381 to release the locking member 38 from pressing against the lid 37. Subsequently, the control unit 71 controls the moving mechanism 371 to detach the lid 37 from the opening 31a of the processing tank 31 (step S312).

[0134] Subsequently, the control unit 71 opens the valve 36b for a predetermined time to discharge the chemical solution from the treatment tank 31.

[0135] Next, the substrate processing apparatus 1 performs a rinsing process on the wafer W (step S313). Specifically, the control unit 71 opens valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinsing solution, and the wafer W is immersed in the DIW. This removes the chemical solution from the wafer W.

[0136] Subsequently, the control unit 71 closes valves 22d and 24d and opens valve 36b for a predetermined time to discharge DIW from the processing tank 31. After that, the control unit 71 proceeds to step S112.

[0137] As described above, the substrate processing apparatus according to the embodiment (for example, substrate processing apparatus 1) comprises a processing tank (for example, processing tank 31), a lid (for example, lid 37), a chemical solution supply unit (for example, second nozzle 34), a pressurizing unit (for example, pump 63), and a control unit (for example, control unit 71). The processing tank has an opening at the top (for example, opening 31a), and processes a substrate (for example, wafer W) by immersing it in a chemical solution. The lid is configured to seal the opening of the processing tank. The chemical solution supply unit supplies chemical solution to the processing tank. The pressurizing unit pressurizes the chemical solution upstream of the chemical solution supply unit. The control unit controls each unit. The control unit immerses the substrate in the chemical solution stored in the processing tank, seals the opening of the processing tank with the lid, and supplies the pressurized chemical solution from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. This allows the substrate to be processed efficiently with the chemical solution.

[0138] Furthermore, the substrate processing apparatus according to the embodiment may also include a chemical solution discharge unit (for example, a first liquid discharge unit 35) for discharging the chemical solution from the processing tank. When the control unit supplies the pressurized chemical solution from the chemical solution supply unit to the processing tank, it may maintain the amount of chemical solution discharged from the chemical solution discharge unit to a given value. This allows the wafer W to be processed more efficiently with the chemical solution.

[0139] Furthermore, the chemical solution discharge section may include a discharge passage (for example, discharge passage 35a) connected to a position above the substrate and below the opening in the processing tank, and a flow meter (for example, flow meter 35d) and a back pressure valve (for example, back pressure valve 35c) provided in the discharge passage. The control unit may control the valve opening of the back pressure valve to a first valve opening so that the measured value of the flow meter is maintained at a given value. This makes it possible to process the wafer W with the chemical solution more efficiently.

[0140] Furthermore, after the processing of the substrate with the chemical solution in the processing tank is completed, the control unit may stop the supply of pressurized chemical solution from the chemical solution supply unit, and then control the valve opening of the back pressure valve to a second valve opening greater than the first valve opening to reduce the pressure of the chemical solution stored in the processing tank. This can prevent the chemical solution from splashing out of the processing tank.

[0141] Furthermore, the chemical discharge section may be equipped with a flow meter and a pressure sensor (for example, pressure sensor 35b) located upstream of the back pressure valve in the discharge passage. The control unit may detach the lid from the opening of the treatment tank when the pressure sensor's detected value is below a specified value. This prevents the chemical from splashing out of the treatment tank.

[0142] Furthermore, the substrate processing apparatus according to the embodiment may include another chemical supply unit that supplies the chemical solution to the processing tank at a flow rate greater than the flow rate supplied from the chemical supply unit to the processing tank. The control unit may supply the chemical solution to the processing tank from the other chemical supply unit before starting the processing of the substrate with the chemical solution in the processing tank, thereby storing the chemical solution in the processing tank. This allows for rapid storage of the chemical solution in the processing tank.

[0143] Furthermore, the substrate processing apparatus according to the embodiment may further include a locking member (for example, a locking member 38) that is inserted into a through hole formed above the opening in the side wall of the processing tank and presses the lid toward the opening. This makes it possible to maintain a sealed state of the opening of the processing tank by the lid.

[0144] Furthermore, the substrate processing apparatus according to the embodiment may further include a light irradiation unit (for example, a light irradiation unit 80) provided in the processing tank for irradiating the substrate with light of a wavelength that can penetrate the chemical solution. The control unit may heat the substrate by irradiating it with light of a wavelength that can penetrate the chemical solution using the light irradiation unit while the chemical solution stored in the processing tank is pressurized. This makes it possible to process the wafer W with the chemical solution more efficiently.

[0145] Furthermore, the wavelength of the light may be between 350 nm and 600 nm. This allows for selective heating of the substrate surface while suppressing the temperature rise of the chemical solution surrounding the substrate.

[0146] Furthermore, the processing tank may have a light-transmitting portion (for example, a light-transmitting portion 31c) on at least one of the two side walls facing the main surface of the substrate and the back surface opposite the main surface, which is in contact with the chemical solution and transmits light. The light irradiation portion may be located on the outer surface (for example, the outer surface 31c1) opposite to the inner surface of the light-transmitting portion that is in contact with the chemical solution. This allows the main surface of the substrate to be heated efficiently.

[0147] Furthermore, the chemical solution may be ozonated water, SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), hydrogen peroxide (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water. This allows the wafer W to be processed more efficiently with the chemical solution.

[0148] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0149] 1. Substrate processing apparatus 30. Circuit board processing unit 31 Processing tank 31a opening 31b Through hole 31c Light transmission part 31c1 External surface 33. Nozzle No. 1 34. Second nozzle 35 1st liquid discharge part 35a Exhaust channel 35b Pressure sensor 35c back pressure valve 35d flow meter 37 Lid 38 Locking member 63 pumps 71 Control Unit 80 Light-irradiating section W wafer

Claims

1. A processing tank having an opening at the top, in which substrates are immersed in a chemical solution for processing, A lid configured to be able to seal the opening of the processing tank, A chemical solution supply unit that supplies the chemical solution to the processing tank, A pressurizing unit that pressurizes the chemical solution upstream of the chemical solution supply unit, A control unit that controls each part Equipped with, The control unit, The substrate is immersed in the chemical solution stored in the processing tank. The opening of the processing tank is sealed with the lid, The chemical solution pressurized by the pressurizing unit is supplied from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. Chemical solution discharge section for discharging the chemical solution from the treatment tank. Furthermore, The control unit, When supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank, the amount of chemical solution discharged from the chemical solution discharge unit is maintained at a given value. The aforementioned chemical solution discharge section is A discharge passage connected to the processing tank at a position above the substrate and below the opening, A flow meter and a back pressure valve are provided in the discharge passage. Equipped with, The control unit, The valve opening of the back pressure valve is controlled to a first valve opening so that the measured value of the flow meter is maintained at a given value. Circuit board processing equipment.

2. The control unit, After the processing of the substrate with the chemical solution in the processing tank is completed, the supply of the pressurized chemical solution from the chemical solution supply unit is stopped. Subsequently, the valve opening of the back pressure valve is controlled to a second valve opening that is greater than the first valve opening to reduce the pressure of the chemical solution stored in the processing tank. The substrate processing apparatus according to claim 1.

3. The aforementioned chemical solution discharge section is Pressure sensor provided upstream of the flow meter and back pressure valve in the discharge passage Equipped with, The control unit, If the pressure sensor detects a value below a specified value, the lid is detached from the opening of the processing tank. The substrate processing apparatus according to claim 2.

4. A treatment tank having an opening at the top for immersing a substrate in a chemical solution for treatment, A lid configured to be able to seal the opening of the processing tank, A chemical solution supply unit that supplies the chemical solution to the processing tank, A pressurizing unit that pressurizes the chemical solution upstream of the chemical solution supply unit, A control unit that controls each part Equipped with, The control unit, The substrate is immersed in the chemical solution stored in the processing tank. The opening of the processing tank is sealed with the lid, The chemical solution pressurized by the pressurizing unit is supplied from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. Another chemical supply unit that supplies the chemical solution to the treatment tank at a flow rate greater than the flow rate of the chemical solution supplied to the treatment tank from the aforementioned chemical supply unit. Furthermore, The control unit, Before starting the treatment of the substrate with the chemical solution in the treatment tank, the chemical solution is supplied to the treatment tank from the other chemical solution supply unit to store the chemical solution in the treatment tank. Circuit board processing equipment.

5. A locking member is provided so as to be insertable into an insertion hole formed above the opening in the side wall of the processing tank, and presses the lid toward the opening. Furthermore, it is equipped with The substrate processing apparatus according to claim 1.

6. A processing tank having an opening at the top for immersing a substrate in a chemical solution for processing, A lid configured to be able to seal the opening of the processing tank, A chemical solution supply unit that supplies the chemical solution to the processing tank, A pressurizing unit that pressurizes the chemical solution upstream of the chemical solution supply unit, A control unit that controls each part Equipped with, The control unit, The substrate is immersed in the chemical solution stored in the processing tank. The opening of the processing tank is sealed with the lid, The chemical solution pressurized by the pressurizing unit is supplied from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. The processing tank is further provided with a light irradiation unit that irradiates the substrate with light of a wavelength that can penetrate the chemical solution, The control unit, With the chemical solution stored in the processing tank under pressurization, the substrate is heated by irradiating it with light of a wavelength that can penetrate the chemical solution using the light irradiation unit. Circuit board processing equipment.

7. The wavelength of the light is between 350 nm and 600 nm. The substrate processing apparatus according to claim 6.

8. The aforementioned processing tank is The substrate has a light-transmitting portion on at least one of the two side walls facing the main surface and the back surface opposite to the main surface, which comes into contact with the chemical solution and transmits the light. The light irradiation unit is It is disposed on the outer surface of the light-transmitting portion opposite to the inner surface that is in contact with the chemical solution. The substrate processing apparatus according to claim 6.

9. The aforementioned chemical solution is ozonated water, SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), hydrogen peroxide (H2O2), dilute hydrofluoric acid (DHF), phosphoric acid (H3PO4), sulfuric acid (H2SO4), SPM (a mixture of sulfuric acid and hydrogen peroxide), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water. The substrate processing apparatus according to claim 1.

10. A substrate processing method for processing a substrate using a substrate processing apparatus described in any one of Claims 1 to 9, A step of immersing the substrate in the chemical solution stored in the processing tank, The steps include sealing the opening of the processing tank with the lid, A step of supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. A substrate processing method, including the following.

11. A computer-readable storage medium on which a program to be implemented in any one of claims 1 to 9 is non-temporarily recorded, A substrate processing apparatus comprising a processing tank having an opening at the top for immersing a substrate in a chemical solution, a lid configured to seal the opening of the processing tank, a chemical solution supply unit for supplying the chemical solution to the processing tank, and a pressurizing unit upstream of the chemical solution supply unit for pressurizing the chemical solution, wherein the substrate is immersed in the chemical solution stored in the processing tank, A procedure for sealing the opening of the processing tank with the lid, A procedure for supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank. A computer-readable storage medium on which a program for implementing the above-mentioned substrate processing device is non-temporarily recorded.

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