Substrate member and light-emitting device

Abstract

To provide a base member capable of easily and selectively removing an insulating film composed of insulating films at desired positions.SOLUTION: A base member includes: a base body having a first surface and a second surface; an electrode which includes a pad part and a draw-out part and is disposed on the first surface of the base body; and an insulating film covering the draw-out part. The insulating film is a distribution Bragg reflection film, includes silicon oxide and the like, and laminates two or more dielectric multilayered films having different refraction indices by turns. The laminated dielectric multilayered films have 70% or more reflection rate ranging from 350 nm to 410 nm and 20% or less reflection rate ranging from 500 nm to 535 nm. At least a part of the pad part is exposed from the insulating film. Surface roughness of the pad part at the exposed part is larger than surface roughness of the draw-out part, and difference between the surface roughness Ra of the draw-out part and the surface roughness Ra of the pad part is at least 0.2 μm or more.SELECTED DRAWING: Figure 9B

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device.

Background Art

[0002] Patent Document 1 discloses, for example, a light-emitting device including an LED chip on a mounting substrate on which a wiring layer (wiring electrode) is formed. In Patent Document 1, the mounting substrate is made of, for example, ceramic. In the light-emitting device configured as described above, in general, in order to protect the wiring electrode and the electrode of the LED chip, the wiring electrode other than the connection portion is protected by an insulating film. In the light-emitting device of Patent Document 1, the wiring electrode other than the connection portion is protected by an ALD film formed by using an atomic layer deposition method (Atomic Layer Deposition method; ALD method) integrally formed with the surface of the LED chip or the like. Further, Patent Document 1 discloses removing the insulating film by polishing.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, it is not always easy to selectively remove the insulating film at a desired position by polishing. Therefore, an object of the present disclosure is to provide a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device that can easily and selectively remove an insulating film at a desired position.

Means for Solving the Problems

[0005] A method for manufacturing a substrate member according to this disclosure includes a preparation step of preparing a structure comprising a substrate having a first surface and a second surface opposite to the first surface, an electrode disposed on the first surface of the substrate, and an insulating film covering the first surface and the second surface of the substrate and the electrode, and an electrode exposure step of irradiating the insulating film on the electrode with laser light to expose the electrode from the insulating film.

[0006] A method for manufacturing another substrate member according to this disclosure includes a preparation step of preparing a structure comprising a ceramic body having a metal element as a constituent element to form a substrate, an electrode disposed on a first surface of the ceramic body, and an insulating film covering the first surface and the electrode; and an electrode exposure step of irradiating the insulating film with laser light that penetrates the insulating film and is absorbed by the electrode from above the insulating film, thereby removing a part of the electrode so that the ceramic body directly below the electrode is not exposed from the electrode, and thereby exposing the electrode from the insulating film.

[0007] A substrate member according to the present disclosure includes a substrate having a first surface and a second surface opposite to the first surface, a pad portion and a lead portion electrically connected to the pad portion, an electrode disposed on the first surface of the substrate, and an insulating film covering the lead portion, wherein at least a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion in the exposed portion is greater than the surface roughness of the lead portion.

[0008] Another substrate member according to the present disclosure includes a substrate having a first surface and a second surface opposite to the first surface, an electrode disposed on the first surface of the substrate and an insulating film covering the pull-out portion, wherein a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion in the exposed portion is greater than the surface roughness of the pad portion covered by the insulating film.

[0009] A light-emitting device according to this disclosure comprises the substrate member and a light-emitting element provided in the mounting area.

[0010] Another light-emitting device according to this disclosure is a light-emitting device comprising a base member on which the frame is provided, and a light-emitting element provided in a mounting area, further comprising a sealing member that seals the area enclosed by the frame. [Effects of the Invention]

[0011] The present disclosure, configured as described above, provides a method for manufacturing a substrate member, a method for manufacturing a light-emitting device, a substrate member, and a light-emitting device, all of which enable easy and selective removal of an insulating film at a desired position. [Brief explanation of the drawing]

[0012] [Figure 1A] This is a bottom view of the ceramic structure according to Embodiment 1. [Figure 1B] This is a cross-sectional view of the ceramic structure according to Embodiment 1 along the IB-IB line in Figure 1A. [Figure 1C] This is a cross-sectional view of the ceramic member according to Embodiment 1. [Figure 2A] This is a top view of the light-emitting device according to Embodiment 2. [Figure 2B] This is a bottom view of the light-emitting device according to Embodiment 2. [Figure 2C] This is a cross-sectional view of the light-emitting device according to Embodiment 2 along line AA in Figure 2A. [Figure 3A] This is a cross-sectional view of the mounting substrate to be prepared in the mounting substrate preparation step of the manufacturing method according to Embodiment 2. [Figure 3B] This is a cross-sectional view of the light-emitting element 1 mounted on a mounting substrate during the mounting process of the manufacturing method according to Embodiment 2. [Figure 3C] This is a cross-sectional view taken when the insulating film 30 is formed in the insulating film formation step of the manufacturing method according to Embodiment 2. [Figure 3D] This is a cross-sectional view showing the process when laser light is irradiated during the electrode exposure step of the manufacturing method according to Embodiment 2. [Figure 4A] This is a top view of the light-emitting device according to Embodiment 3. [Figure 4B] It is a cross-sectional view of the light-emitting device according to Embodiment 3 taken along line B-B in FIG. 4A. [Figure 4C] It is a bottom view of the light-emitting device according to Embodiment 3. [Figure 5] It is a top view of the package of the light-emitting device according to Embodiment 4. [Figure 6] It is a top view of the package of the light-emitting device according to Modification 1. [Figure 7A] It is a bottom view of the light-emitting device according to Modification 3. [Figure 7B] It is a bottom view of the light-emitting device according to Modification 4. [Figure 8A] It is a top view of the base member according to Embodiment 5. [Figure 8B] It is a cross-sectional view of the base member according to Embodiment 5 (a cross-sectional view taken along line VIII-VIII in FIG. 8). [Figure 8C] It is a cross-sectional view of a modified form of the base member according to Embodiment 5. [Figure 8D] It is a cross-sectional view of a modified form of the base member according to Embodiment 5. [Figure 9A] It is a top view of the package of the light-emitting device according to Embodiment 5. [Figure 9B] It is a cross-sectional view of the package of the light-emitting device according to Embodiment 5 (a cross-sectional view taken along line IX-IX in FIG. 9A). [Figure 9C] It is a cross-sectional view of a modified form of the package of the light-emitting device according to Embodiment 5. [Figure 9D] It is a cross-sectional view of a modified form of the package of the light-emitting device according to Embodiment 5. [Figure 9E] It is a cross-sectional view of a modified form of the package of the light-emitting device according to Embodiment 5. [Figure 9F] It is a cross-sectional view of a modified form of the package of the light-emitting device according to Embodiment 5. [Figure 9G] It is a cross-sectional view of a modified form of the package of the light-emitting device according to Embodiment 5.

Modes for Carrying Out the Invention

[0013] The drawings referenced in the following descriptions of the embodiments are schematic representations of this disclosure, and therefore the scale, spacing, and positional relationships of each component may be exaggerated, or some components may be omitted from the illustration. Furthermore, the scale and spacing of each component may not always match. In addition, in the following descriptions, the same name and reference numeral generally indicate the same or identical components, and detailed explanations will be omitted as appropriate. Also, in the configuration of a wiring board, terms such as "top," "bottom," "left," and "right" may be interchangeable depending on the situation. In this specification, "top," "bottom," etc., indicate the relative position between components in the drawings referenced for explanation, and are not intended to indicate absolute positions unless otherwise specified. The embodiments relating to this disclosure will be described below. Embodiment 1 The manufacturing method for the base member (ceramic member) of Embodiment 1 is based on the following knowledge independently obtained by the inventor. Specifically, the inventors attempted to remove the insulating film at a desired location easily and selectively by irradiating the insulating film with laser light, thereby removing the insulating film at the irradiated location. (Hereinafter referred to as laser ablation.) However, it was found that when attempting to remove an insulating film formed on a ceramic body containing metallic elements by laser ablation, the ceramic body could become conductive due to laser irradiation. The reason for this conductivity is thought to be that the laser light that has passed through the insulating film is irradiated onto the ceramic body. On the other hand, the insulating film of the same material formed on the electrodes was removed by laser ablation. Further investigation revealed that even if an insulating film formed on an electrode transmits laser light, if the electrode located beyond the insulating film absorbs the laser light, then, for example, a portion of the electrode near the surface is abraded by the laser light irradiation, and the insulating film is removed along with the abraded electrode. In the following, "electrodes" refer to materials containing metal and possessing conductivity, but for the sake of explaining the structure, they may also be expressed as element electrodes, external connection electrodes, element connection electrodes, etc.

[0014] The method for manufacturing a ceramic member (substrate member) according to Embodiment 1 is based on the above-mentioned findings independently obtained by the present inventors, and includes a preparation step of preparing a ceramic structure including a ceramic body containing a metal element as a constituent element, an electrode disposed on a first surface of the ceramic body, and an insulating film covering the first surface and the electrode; and an electrode exposure step of irradiating the insulating film with laser light that penetrates the insulating film and is absorbed by the electrode from above the insulating film, thereby removing a part of the electrode so that the ceramic body directly below the electrode is not exposed from the electrode, and thereby exposing the electrode from the surface of the insulating film.

[0015] The method for manufacturing a ceramic member according to Embodiment 1 will be explained using Figures 1A to 1C. In the preparation process, the ceramic body 3 is, for example, as follows: The ceramic body 3 contains a metallic element as a constituent element. Examples of metallic elements include aluminum. Examples of materials for the aluminum-containing ceramic body include aluminum nitride or aluminum oxide. As shown in Figures 1A and 1B, the preparation step prepares a ceramic structure 4 comprising a ceramic body, electrodes (external connection electrodes 12a, 12b) provided on the first surface of the ceramic body, and an insulating film 30 covering the first surface of the ceramic body and the electrodes. Preferably, at least the surface of these electrodes contains gold, which allows for easy removal of the insulating film 30 on the electrodes by laser ablation during the electrode exposure step. The insulating film 30 includes, for example, at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxide nitride. The insulating film 30 is formed, for example, by atomic layer deposition. Furthermore, the insulating film 30 may be a single layer or a multilayer film, but a multilayer film is preferred. The multilayer nature of the insulating film 30 improves its gas barrier properties. Additionally, the insulating film 30 can be used as an optically functional film, such as an anti-reflective coating.

[0016] Figure 1B is a cross-sectional view along the line IB-IB in Figure 1A. Figure 1C shows a cross-sectional view of the ceramic member of Embodiment 1 according to this disclosure. Specifically, it shows a schematic diagram of the state after a portion of the electrodes of the ceramic structure 4 has been removed by laser ablation, and the electrodes have been exposed from the insulating film 30. In the electrode exposure process, the peak wavelength of the laser light irradiated is set so that it penetrates the insulating film 30 and is absorbed by the electrode provided beneath the insulating film 30. For example, it can be set in the range of 250 nm or more and 550 nm or less. Here, the laser equipment (facilities) used for laser ablation tend to be less expensive if visible light is used than ultraviolet light, and among visible light, green light is less expensive than blue light. Therefore, it is preferable to use long-wavelength laser light within the range in which laser ablation is possible within the above peak wavelength range. Specifically, it is preferable to use laser light with a peak wavelength in the range of 260 nm to 540 nm, and more preferably, laser light in the range of 400 nm to 535 nm. Particularly preferable is laser light with a peak wavelength of 500 nm to 535 nm. A laser irradiation device that emits laser light with peak wavelengths within the above range is less expensive than a laser irradiation device that uses ultraviolet light, thus reducing manufacturing equipment costs. Furthermore, it is also less expensive than other methods for forming the insulating film 30, such as equipment for patterning and wet cleaning using photoresist, thus reducing manufacturing equipment costs. Furthermore, the peak wavelength of the laser light is set by appropriately adjusting it within the above range, taking into consideration the insulating film material and electrode material.

[0017] In the electrode exposure process, the intensity of the laser light used for irradiation is set so that a portion of the electrode, for example, a portion of the electrode near the interface between the insulating film 30 and the electrode, is removed, so that the ceramic body 3 directly beneath the electrode is not exposed from the electrode. For example, the intensity of the laser light is set so that the thickness of the electrode material removed on the electrode surface is in the range of 0.5 nm to 500 nm. Furthermore, when setting the intensity of the irradiated laser light, it is preferable to set it so that the thickness of the electrode material to be removed from the electrode surface is 200 nm or less.

[0018] Furthermore, the irradiation spot diameter of the laser light is set to a range of, for example, 15 μm or more and 60 μm or less, preferably 15 μm or more and 30 μm or less. Setting the irradiation spot diameter within this range can suppress the reduction in the flatness of the electrode surface due to laser ablation. The energy distribution of laser light is not necessarily uniform with respect to the irradiation spot. Therefore, if the irradiation spot diameter of the laser light is large, the non-uniformity of the energy distribution within the irradiation spot diameter is reflected in the surface roughness of the electrode, reducing the flatness of the electrode surface. Also, if the energy distribution of the laser light within the irradiation spot diameter is the same regardless of the size of the irradiation spot diameter, a smaller irradiation spot diameter will result in less variation in the processing depth within the irradiation spot diameter. Therefore, by setting the spot diameter within the above range, the reduction in the flatness of the electrode surface due to laser ablation can be suppressed. Furthermore, by irradiating with laser light while partially overlapping the irradiation spots of the laser light, the insulating film on the electrode surface can be efficiently removed. Examples of overlapping ranges include 2 / 3 or less, 1 / 2 or less, 1 / 3 or less, 1 / 4 or less, and 1 / 5 or less of the area of ​​the laser spot.

[0019] The laser light irradiated in the electrode exposure process is preferably a pulsed laser, and the pulse energy of the laser light is set to a range of, for example, 1 μJ to 1000 J, preferably 2 μJ to 300 μJ, more preferably 3 μJ to 100 μJ, and more preferably 3 μJ to 10 μJ. The pulse width of the laser light is set to a range of, for example, 100 femtoseconds to 2000 femtoseconds, preferably 100 femtoseconds to 1000 femtoseconds, and more preferably 100 femtoseconds to 500 femtoseconds. By using such a pulsed laser, it is possible to remove the insulating film on the electrode while suppressing the conductivity of the ceramic body.

[0020] Furthermore, when using a pulsed laser in the electrode exposure process, it is preferable to scan the laser so that a portion of the laser beam's irradiation area overlaps. Using a pulsed laser reduces the thermal effects of the laser beam and allows for the removal of the insulating film while maintaining the electrode structure.

[0021] As described above, the removal of the insulating film by laser ablation is a dry method, eliminating the need for a drying process. Furthermore, the change in resistance is relatively small when comparing the material before and after laser ablation, and the solder wettability on the electrodes is good.

[0022] Furthermore, the pulse energy and pulse width of the laser light irradiated during the electrode exposure process are set considering the insulating film material, electrode material, insulating film thickness, electrode thickness, laser spot diameter, etc. For example, if the insulating film is made of aluminum oxide (e.g., Al2O3) with a thickness of 400 nm and the electrode is made of Au plating with a thickness of 1 μm, the pulse energy and pulse width of the irradiated laser light are set to a range of 1 μJ to 1000 μJ and 100 femtoseconds to 2000 femtoseconds, preferably 3 μJ to 100 μJ and 100 femtoseconds to 1000 femtoseconds, and more preferably 3 μJ to 10 μJ and 100 femtoseconds to 500 femtoseconds.

[0023] The following describes a method for manufacturing a light-emitting device, including the method for manufacturing the ceramic component described above, and a light-emitting device manufactured by this method.

[0024] Embodiment 2 As shown in Figures 2A to 2C, the light-emitting device 100 of Embodiment 2 includes a mounting substrate 10 and a light-emitting element 1 mounted on the mounting substrate 10. As shown in Figure 2C, the mounting substrate 10 includes a substrate 11, element connection electrodes 13a and 13b formed on the upper surface of the substrate 11, and external connection electrodes 12a and 12b formed on the lower surface of the substrate 11. The element connection electrodes 13a and 13b and the external connection electrodes 12a and 12b are connected by through electrodes 14a and 14b formed in through holes in the substrate 11, respectively. The light-emitting element 1 is, for example, a flip-chip type light-emitting element equipped with two element electrodes 1a and 1b with different polarities on the electrode-forming surface opposite to the light-emitting surface, and these element electrodes 1a and 1b are connected to element connection electrodes 13a and 13b. Furthermore, in the light-emitting device 100 of Embodiment 2, all outer surfaces, including the surface of the light-emitting element 1, except for the surfaces of the external connection electrodes 12a and 12b connected to the external wiring, are covered with an insulating film 30 formed, for example, by an atomic layer deposition method described later.

[0025] As described above, the light-emitting device 100 of Embodiment 2 provides a highly reliable light-emitting device with excellent moisture resistance and other properties without requiring, for example, a sealing member to cover the light-emitting element.

[0026] Manufacturing method of the light-emitting device of Embodiment 2 The manufacturing method of the light-emitting device of Embodiment 2 includes a step of mounting a light-emitting element in the preparation step of the manufacturing method of the ceramic member of Embodiment 1. Specifically, an external connection electrode is formed on the lower surface of a substrate which is a ceramic body containing metal, and an element connection electrode is formed on the upper surface to which the element electrodes of the light-emitting element are connected. Then, the light-emitting element is mounted, and subsequently, an insulating film is formed on the entire surface, including the surface of the light-emitting element and the surface of the substrate, thereby preparing a light-emitting device structure including a ceramic component. In other words, in the manufacturing method of the light-emitting device of Embodiment 2, the preparation steps include 1-1. mounting substrate preparation steps, 1-2. light-emitting element mounting steps, and 1-3. insulating film formation steps. The method for manufacturing the light-emitting device of Embodiment 2 will be described in more detail below. In the following explanation, the substrate including the external connection electrodes and the element connection electrodes is referred to as the mounting substrate (ceramic material), and the portion excluding the external connection electrodes and the element connection electrodes is simply referred to as the substrate (ceramic body).

[0027] 1-1. Preparation process for mounting substrates Here, first, prepare the mounting substrate shown in Figure 3A. Specifically, prepare a mounting substrate 10 having external connection electrodes 12a and 12b on the lower surface (first surface) of the substrate 11, element connection electrodes 13a and 13b on the upper surface (second surface) to which the element electrodes 1a and 1b of the light-emitting element 1 are connected, and through electrodes 14a and 14b that electrically connect the external connection electrodes 12a and 13a, and the external connection electrodes 12b and 13b.

[0028] 1-2. Light-emitting element mounting process Here, we will implement light-emitting element 1. Specifically, as shown in Figure 3B, the element connection electrodes 13a and 13b of the mounting substrate 10 and the element electrodes 1a and 1b of the light-emitting element 1 are connected via connecting members 21a and 21b. Here, the light-emitting element 1 shown in Figure 3B is a simplified depiction of a light-emitting element with element electrodes 1a and 1b on the same plane. Element electrode 1a is, for example, a p-side element electrode connected to the p-side semiconductor layer, and element electrode 1b is, for example, an n-side element electrode connected to the n-side semiconductor layer. Although not shown in Figure 3B, a protective element may be implemented in addition to the light-emitting element 1.

[0029] 1-3. Insulating film formation process Here, an insulating film 30 is formed on all surfaces, including the surface of the mounted light-emitting element and the surface of the mounting substrate. Here, "all surfaces" refers to all exposed surfaces of the mounting structure, including the surface of the light-emitting element, the surface of the substrate 11, the surfaces of the element connection electrodes 13a and 13b, the surfaces of the connection members 21a and 21b, the surfaces of the element electrodes 1a and 1b of the light-emitting element 1, and the surfaces of the external connection electrodes 12a and 12b, as shown in Figure 3C.

[0030] The insulating film 30 is preferably formed by atomic layer deposition, which allows for the formation of a dense insulating film 30 with a uniform film thickness on the entire surface, including surfaces in different plane directions. Furthermore, as protective function can be ensured with a relatively thin insulating film 30, the insulating film 30 in the area to be removed by laser ablation can be made thinner, making it possible to easily remove the insulating film 30 by laser ablation. Atomic layer deposition is a method for forming layers of reactive components one atomic layer at a time. For example, when forming a protective film of aluminum oxide (Al2O3) using TMA (trimethylaluminum) and water (H2O), the following procedure is used.

[0031] First, H2O gas is introduced to form OH groups on the surface that will form the insulating film (first reaction). Next, excess gas is exhausted, and then TMA gas is introduced to react the OH groups formed in the first reaction with TMA (second reaction). Next, excess gas is exhausted. The first reaction, exhaust, second reaction, and exhaust constitute one cycle, and by repeating this, Al2O3 of a predetermined film thickness can be formed.

[0032] Atomic layer deposition (ADD) is a film deposition method that exhibits low linearity of reactive components and excellent step coverage. Unlike sputtering and CVD, reactive components are supplied even near obstacles. As a result, regions such as the space between light-emitting elements and substrates can form a more uniform film thickness and quality, resulting in a higher-quality protective film, just like other regions without obstacles.

[0033] Insulating films obtained by atomic layer deposition have better film quality with fewer pinholes compared to insulating films obtained by sputtering, CVD, etc., and possess superior protective function.

[0034] The insulating film 30 may be, for example, aluminum oxide (Al2O3), or other materials such as silicon oxide (SiO2), aluminum nitride (AlN) or silicon nitride (Si3N4), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), or silicon oxide nitride (SiO3N4). x N y ) can be adopted. The protective film preferably uses aluminum oxide or silicon oxide. More preferably it is a multilayer structure of two or more layers of aluminum oxide and silicon oxide. By making the protective film a multilayer film, the gas barrier properties are improved. Furthermore, by making it a multilayer film, optical functions (for example, functions as an anti-reflective film) can be added. The thickness of the insulating film 30 is not particularly limited, but is preferably 5 nm to 500 nm, more preferably 10 nm to 100 nm, and particularly preferably 20 nm to 50 nm. This is because it is possible to improve productivity while suppressing the transmission of moisture and humidity.

[0035] (2) Electrode exposure process of Embodiment 2 In the electrode exposure step of Embodiment 2, as shown in Figure 3D, a laser beam is irradiated from above the insulating film 30, which penetrates the insulating film 30 and is absorbed by the external connection electrodes 12a and 12b provided below the insulating film 30. This removes a portion of the surface of the external connection electrodes 12a and 12b, for example, the electrode material near the interface between the insulating film 30 and the external connection electrodes 12a and 12b, so that the ceramic body (substrate 11) is not exposed from the external connection electrodes 12a and 12b. This removal of the electrode material exposes the external connection electrodes 12a and 12b from the insulating film 30. At this time, the pulse energy of the pulsed laser beam is set to a range of, for example, 1 μJ or more and 1000 J or less, preferably 2 μJ or more and 300 μJ or less, more preferably 3 μJ or more and 100 μJ or less. Furthermore, the pulse width of the laser light is set to, for example, a range of 100 femtoseconds or more and 2000 femtoseconds or less, preferably a range of 100 femtoseconds or more and 1000 femtoseconds or less, and more preferably a range of 100 femtoseconds or more and 500 femtoseconds or less. By using such a pulsed laser, it is possible to remove the insulating film on the electrode while suppressing the conductivity of the ceramic body.

[0036] Through the above steps, the light-emitting device 100 shown in Figure 2C is manufactured by the manufacturing method of the light-emitting device of Embodiment 2. In the electrode exposure process, it is preferable that the laser beam is scanned so as to pass over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided, at least once, in a plan view. The insulating film 30 is removed together with the electrode material when the electrode material is provided directly beneath it, but the insulating film 30 provided directly on the ceramic body remains on the ceramic body, and the ceramic body is not exposed from the insulating film 30. Therefore, by scanning the laser beam so as to pass over the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided, at least once, the external connection electrodes 12a and 12b can be selectively exposed from the insulating film 30 without having to align the laser. More preferably, in each row where the laser beam is scanned, at least a portion of the laser beam irradiation spots in adjacent rows should overlap. This makes it possible to more reliably scan the entire surface of the mounting substrate 10 on the side where the external connection electrodes 12a and 12b are provided. Figure 2A is a top view of the light-emitting device 100, and Figure 2B is a bottom view of the light-emitting device 100. As shown in Figure 2A, for example, the light-emitting device 100 includes a protective element 2.

[0037] Embodiment 3 The light-emitting device and the method for manufacturing the light-emitting device according to Embodiment 3 will be described below. The light-emitting device of Embodiment 3 differs primarily in the following respects. (a) The light-emitting device of Embodiment 3 is equipped with a package 110 as a ceramic material instead of a mounting substrate 10. (b) The light-emitting device of Embodiment 3 includes a distributed Bragg reflective film 230 made of a dielectric multilayer film as an insulating film.

[0038] Furthermore, the manufacturing method of the light-emitting device of Embodiment 3 differs from the above-mentioned differences in the light-emitting device in the following respects. (c) In the manufacturing method of the light-emitting device of Embodiment 2, the mounting step of the light-emitting element, which was included in the preparation step, is included after the electrode exposure step. The following describes in detail the light-emitting device of Embodiment 3 and the method for manufacturing the light-emitting device.

[0039] Light-emitting device of Embodiment 3 In the light-emitting device of Embodiment 3, the package 110 (ceramic member) is a ceramic substrate 111 (ceramic body) having a recess, as shown in Figures 4A and 4B, and the bottom surface of the recess The package includes element connection electrodes 113a and 113b formed on the (second surface) to which the element electrodes of the light-emitting element 101 are connected, and external connection electrodes 112a and 112b formed on the lower surface (first surface) of the package 110 opposite the bottom surface of the recess, as shown in Figures 4B and 4C. Here, the external connection electrodes 112a, 112b and the element connection electrodes 113a, 113b are connected, for example, by through electrodes 114a, 114b formed in through holes penetrating the ceramic substrate 111.

[0040] Furthermore, a distributed Bragg reflective film 230 is formed on the entire surface of the package 110, including the portion of the inner surface of the recess of the package 110 excluding the portion where the element connection electrodes 113a and 113b are formed, the portion of the package 110 excluding the portion where the external connection electrodes 112a and 112b are formed, the side surface of the package 110, and the upper end surface of the package excluding the portion where the spacer 151 is formed. The distributed Bragg reflective film 230 is formed, for example, by alternately stacking two or more translucent dielectric films having different refractive indices at a predetermined thickness, and reflects the light emitted by the light-emitting element 101. In the light-emitting device of Embodiment 3, the distributed Bragg reflective film 230 formed on the inner surface of the recess of the package 110 mainly plays the role of reflecting the light emitted by the light-emitting element 101, and the distributed Bragg reflective film 230 formed on the lower surface of the package 110 plays the role of insulating and separating the external connection electrodes 112a and 112b.

[0041] Furthermore, the light-emitting element 101 is provided in a recess of the package 110, and the element electrodes of the light-emitting element 101 are connected to element connection electrodes 113a and 113b via connecting members. The light-emitting device of Embodiment 3 includes a translucent cover 150 made of, for example, transparent glass, which covers the recess of the package 110 in which the light-emitting element 101 is provided. The translucent cover 150 is joined at the four corners of the upper end surface of the package 110 surrounding the recess by spacers 151 which also serve as connecting members.

[0042] As described above, in the light-emitting device of Embodiment 3, the portion of the inner surface of the recess of the package 110 excluding the portion where the element connection electrodes 113a and 113b are formed is covered with a distributed Bragg reflective film 230. Therefore, the light emitted by the light-emitting element 101 can be efficiently extracted to the outside through the translucent cover 150, thereby increasing the light extraction efficiency.

[0043] Method for manufacturing the light-emitting device of Embodiment 3 The manufacturing method of the light-emitting device of Embodiment 3 differs from the above-mentioned differences relating to the light-emitting device in that, in addition to the differences relating to the light-emitting device, it includes the mounting step of the light-emitting element, which was included in the preparation step in the manufacturing method of the light-emitting device of Embodiment 2, after the electrode exposure step. The manufacturing method of the light-emitting device of Embodiment 3 will be described in detail below.

[0044] First, the manufacturing method of the light-emitting device of Embodiment 3 includes, in the preparation steps of the manufacturing method of the ceramic member of Embodiment 1, 1-1. package preparation step and 1-2. distributed Bragg reflective film (insulating film) formation step. In the following description, the ceramic substrate 111 (ceramic body) is defined as the part excluding the external connection electrodes 112a, 112b, the element connection electrodes 113a, 113b, the through electrodes 114a, 114b, and the distributed Bragg reflective film 230.

[0045] 1-1. Package preparation process Here, we prepare a package 110 having a recess. Specifically, a ceramic substrate 111 having a recess is prepared, external connection electrodes 112a and 112b are formed on the lower surface of the ceramic substrate 111, and element connection electrodes 113a and 113b are formed on the bottom surface of the recess. The ceramic substrate 111 can be manufactured using either the so-called post-fire method or the cofiring method. When manufacturing the ceramic substrate 111, it is preferable that the outermost surface of the external connection electrode contains Au.

[0046] 1-2. Process for forming a distributed Bragg reflective film (insulating film) Here, a distributed Bragg reflective film is formed on the inner surface of the recess of the package 110 (including the surfaces of the element connection electrodes 113a and 113b), the upper end surface and side surfaces of the package 110, and the lower surface of the package 110 (including the surfaces of the external connection electrodes 112a and 112b).

[0047] The distributed Bragg reflective film is preferably formed by atomic layer deposition (ALD). By forming it by atomic layer deposition, two or more dielectric films constituting the distributed Bragg reflective film can be formed to a predetermined thickness on the bottom and side surfaces of the recess, which have different surface orientations. This makes it easy to form a distributed Bragg reflective film having the same reflective properties on the bottom and side surfaces of the recess, which have different surface orientations. The distributed Bragg reflective film preferably has a reflectivity of 70% or more in the range of 350 nm to 410 nm and a reflectivity of 20% or less in the range of 500 nm to 535 nm. Within this range, the Bragg reflective film effectively transmits green light and effectively reflects ultraviolet light. When the light-emitting element emits ultraviolet light, the distributed Bragg reflective film on the electrode surface can be effectively removed by laser ablation, and furthermore, the remaining distributed Bragg reflective film can contribute to improving the light extraction efficiency of the light-emitting element. The distributed Bragg reflective film can be formed, for example, by alternately forming a first dielectric film made of Nb2O5 and a second dielectric film made of SiO2. Furthermore, the film thickness and number of layers of the first and second dielectric films are set appropriately considering the emission wavelength of the light-emitting element 101.

[0048] When forming the first dielectric film made of Nb2O5 by atomic layer deposition, for example, the following procedure is used. (Step A1) The vacuum chamber is evacuated to a predetermined vacuum level, and the ceramic component is heated to the film deposition temperature. The film deposition temperature is preferably set to a range of 150°C to 300°C, more preferably 200°C to 250°C. (Step A2) Next, an oxygen-containing oxygen source gas is introduced into the vacuum chamber to bond oxygen to the entire ceramic component. For example, O3 (ozone) gas can be used as the oxygen source gas. After bonding oxygen to the surface of the ceramic component, the remaining oxygen source gas is exhausted. In this step, H2O may also be used to bond OH groups to the surface of the ceramic component. (Step A3) Next, an organometallic raw material gas containing niobium (Nb) is introduced into a vacuum chamber, and the oxygen bonded to the surface of the ceramic component reacts with the organometallic raw material gas containing Nb to bond Nb to the oxygen bonded to the surface of the ceramic component. Examples of organometallic raw material gases containing Nb include tris(diethylamide)(tert-butylimide)niobium(V). (Step A4) After bonding Nb to oxygen bonded to the surface of the ceramic component, the organometallic raw material gas containing residual Nb is exhausted. (Step A5) Next, an oxygen-containing oxygen source gas is introduced to bond oxygen to the Nb on the ceramic component. By repeating steps A2 to A5 a predetermined number of times on the surface of the ceramic member described above, Nb2O5 with the required film thickness is formed.

[0049] When forming a second dielectric film made of SiO2 by atomic layer deposition, for example, the following procedure can be used. (Step B1) The vacuum chamber is evacuated to a predetermined vacuum level, and the ceramic component is heated to the film deposition temperature. The film deposition temperature is preferably set to a range of 150°C to 300°C, more preferably 200°C to 250°C. (Step B2) Next, an oxygen-containing oxygen source gas is introduced into the vacuum chamber to bond oxygen to the entire ceramic component. O3 (ozone) gas can be used as the oxygen-containing oxygen source gas. After bonding oxygen to the surface of the ceramic component, the remaining oxygen source gas is exhausted. In this step, H2O may also be used to bond OH groups to the surface of the ceramic component. (Step B3) Next, an organometallic raw material gas containing silicon (Si) is introduced into a vacuum chamber, and the oxygen bonded to the surface of the ceramic component reacts with the Si-containing organometallic raw material gas to bond Si to the oxygen bonded to the surface of the ceramic component. Tris(dimethylamino)silane gas or bis(diethylamino)silane gas can be used as the raw material gas for Si. (Step B4) After bonding Si to oxygen bonded to the surface of the ceramic component, the remaining Si-containing organometallic raw material gas is exhausted. (Step B5) Next, an oxygen-containing oxygen source gas is introduced to bond oxygen to the Si on the ceramic component. By repeating steps B2 to B5 a predetermined number of times on the surface of the ceramic member described above, SiO2 with the required film thickness is formed.

[0050] Furthermore, the distributed Bragg reflective coating is not limited to formation by atomic layer deposition, but may also be formed by sputtering or vapor deposition. Furthermore, the distributed Bragg reflective film may be selectively formed on the inner surface of the recess of the package 110 (including the surfaces of the element connection electrodes 113a and 113b) and the lower surface of the package 110 (including the surfaces of the external connection electrodes 112a and 112b), excluding the upper end surface and side surfaces of the package 110.

[0051] (2) Electrode exposure process of Embodiment 3 In the electrode exposure step of Embodiment 3, laser light that passes through the distributed Bragg reflective film and is absorbed by the external connection electrodes 112a, 112b and the element connection electrodes 113a, 113b is irradiated from above the distributed Bragg reflective film formed on the external connection electrodes 112a, 112b and above the distributed Bragg reflective film formed on the element connection electrodes 113a, 113b, respectively, to remove a portion of the surface of the external connection electrodes 112a, 112b and a portion of the surface of the element connection electrodes 113a, 113b so as not to expose the ceramic substrate 111. By removing this electrode material, the external connection electrodes 112a, 112b and the element connection electrodes 113a, 113b are exposed from the distributed Bragg reflective film 230. The peak wavelength of the laser light is 250 nm to 550 nm, preferably light with a peak wavelength of 500 nm to 100 nm. By using laser light with a peak wavelength in the range of 500 nm to 535 nm, Au contained in electrode materials can be removed by laser ablation using relatively inexpensive equipment.

[0052] Through the above steps, the package 110 in the light-emitting device of Embodiment 3 is prepared.

[0053] (3) Mounting and light-transmitting cover joining process The light-emitting element 101 is mounted onto the package 110 prepared as described above, and the translucent cover 150 is joined to it using the spacer 151.

[0054] The light-emitting device of Embodiment 3 is manufactured through the above steps.

[0055] Embodiment 4 The light-emitting device and the method for manufacturing the light-emitting device according to Embodiment 4 will be described below. The light-emitting device of Embodiment 4 is configured similarly to the light-emitting device of Embodiment 3, except that the element connection electrodes 113a and 113b are exposed from the distributed Bragg reflective film 230 at multiple locations. Specifically, the portions of the element connection electrodes 113a and 113b that are connected to the element electrodes of the light-emitting element are exposed by a plurality of openings 230a and 230b provided in the distributed Bragg reflective film 230, as shown in Figure 5. In the light-emitting device of Embodiment 3, the portion where the element connection electrodes 113a and 113b are exposed is exposed by, for example, rectangular openings 230A and 230B provided in the distributed Bragg reflective film 230, and the openings 230A and 230B are shown by dashed lines in Figure 5.

[0056] In the light-emitting device of Embodiment 4, it is preferable that the openings 230a and 230b that expose the element connection electrodes 113a and 113b at multiple locations are circular in shape and distributed across the entire area facing the element electrodes of the light-emitting element 1. Furthermore, in the light-emitting device of Embodiment 4, the element electrode connection portion of the light-emitting element is provided, for example, at the exposed portions of the element connection electrodes 113a and 113b, that is, at positions corresponding to the openings 230a and 230b, respectively, and is of a size similar to the openings 230a and 230b, and is connected by bumps formed on the exposed portions of the element connection electrodes 113a and 113b in the openings 230a and 230b.

[0057] In the light-emitting device of Embodiment 4, if the light-emitting element is a flip-chip type light-emitting element that, for example, has a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate in order from the substrate side, and has a first conductivity type electrode connection part and a second conductivity type electrode connection part on the same side of the second conductivity type semiconductor layer, then the element electrode connection parts (first conductivity type electrode connection part and second conductivity type electrode connection part) of the light-emitting element are provided, for example, as follows. First, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are laminated on a substrate for a light-emitting element. Then, the second conductivity type semiconductor layer and the active layer on the first conductivity type semiconductor layer in the portion where the first conductivity type electrode connection is formed are removed to expose the first conductivity type semiconductor layer. Then, a first conductivity type electrode connection portion is formed that contacts the exposed first conductivity type semiconductor layer. The first conductivity type electrode connection portion is formed in the manner described above. Furthermore, the second conductivity type electrode connection portion is formed at a predetermined position on the second conductivity type semiconductor layer. Furthermore, an insulating film is formed, for example, on the portion of the semiconductor layer excluding the connection portion of the first conductivity type electrode and the connection portion of the second conductivity type electrode on the second conductivity type semiconductor layer.

[0058] The first and second conductivity type electrode connection portions of the light-emitting element configured as described above are connected via bumps to the exposed portions of the element connection electrodes 113a and 113b of the package, respectively. This allows the light-emitting element to be mounted. The light-emitting element is a light-emitting element having a peak wavelength in the range of 280 nm to 575 nm, preferably a light-emitting element having a peak wavelength in the range of 280 nm to 410 nm, and particularly preferably a light-emitting element having a peak wavelength in the range of 350 nm to 410 nm.

[0059] The following describes the differences between the manufacturing method of the light-emitting device of Embodiment 4 and the manufacturing method of the light-emitting device of Embodiment 3.

[0060] First, the method for manufacturing the light-emitting device of Embodiment 4 is the same as the method for manufacturing the light-emitting device of Embodiment 3 in that the preparation steps in the method for manufacturing the ceramic member of Embodiment 1 include 1-1. package preparation step and 1-2. distributed Bragg reflective film (insulating film) formation step.

[0061] Electrode exposure process of Embodiment 4 In the electrode exposure step of Embodiment 4, laser light that passes through the distributed Bragg reflective film and is absorbed by the external connection electrodes 112a, 112b and the element connection electrodes 113a, 113b is irradiated from above the distributed Bragg reflective film formed on the external connection electrodes 112a, 112b and above the distributed Bragg reflective film formed on the element connection electrodes 113a, 113b, respectively, to vaporize and remove a portion of the surface of the external connection electrodes 112a, 112b and a portion of the surface of the element connection electrodes 113a, 113b so that the ceramic substrate 111 is not exposed. This is the same as the electrode exposure step of Embodiment 3.

[0062] However, the electrode exposure process in Embodiment 4 differs from that in Embodiment 3 in that the element connection electrodes 113a and 113b are laser ablated at multiple locations to expose them from the distributed Bragg reflective film 230. For example, in the electrode exposure step of Embodiment 4, when irradiating laser light from above the distributed Bragg reflective film formed on the element connection electrodes 113a and 113b, the on / off switching of the laser light is controlled based on the positional information of the apertures 230a and 230b. For example, the portion where the element connection electrodes 113a and 113b are exposed is converted into data using XY coordinates on the plane of the element connection electrodes 113a and 113b or on the distributed Bragg reflective film 230. Based on this data, the system controls the irradiation of laser light in the portion where the element connection electrodes 113a and 113b are exposed, and stops the irradiation of laser light in the other portions. According to the electrode exposure process of Embodiment 4 described above, openings 230a and 230b can be formed in the distributed Bragg reflective film 230 with high positional accuracy.

[0063] In the package fabricated as described above, bumps are formed on the element connection electrodes 113a and 113b exposed through the openings 230a and 230b, and the first conductivity type electrode connection portion and the second conductivity type electrode connection portion of the light-emitting element are connected to these bumps facing each other. The light-emitting element is then mounted in the designated position on the package as described above.

[0064] Variation 1. In the light-emitting device of Embodiment 4 described above, the shape and area of ​​the openings 230a and 230b were made the same. However, in the light-emitting device of the embodiment, the shape and area of ​​the openings 230a and 230b are not limited to being the same. By utilizing laser ablation, it is possible to select the area in which the openings 230a and 230b are exposed. For example, by adjusting the areas of the openings 230a and 230b so that the remaining area of ​​the distributed Bragg reflective film 230 is large, the light from the light-emitting element can be efficiently reflected by the distributed Bragg reflective film 230, thereby improving the light extraction efficiency. For example, as shown in Figure 6, the opening that exposes the element connection electrode 113a may be composed of two types of openings 230a and 230aa with different opening areas, or it may be composed of three or more types of openings with different opening areas. Furthermore, the opening that exposes the element connection electrode 113a may be composed of two or more openings of different shapes, in which case the opening areas may be different or the same. The shape of the opening is not limited to a circular shape, but may be an elliptical, triangular, square, or other polygonal shape, as long as it can be realized by scanning with a laser.

[0065] Variation 2 In the light-emitting device of Embodiment 2, the external connection electrodes 12a and 12b were identical in shape, as shown in Figure 2B. Similarly, the light-emitting devices of Embodiments 3 and 4 were constructed with external connection electrodes 112a and 112b of the same shape, as shown in Figure 4C. However, the two external connection electrodes of the light-emitting devices of the embodiments may differ in shape and / or size.

[0066] Variation 3 As shown in Figure 7A, the light-emitting devices of embodiments 2 to 4 may have a heat dissipation section 16 made of, for example, a metal with high thermal conductivity between the two external connection electrodes 12a (112a) and 12b (112b). The heat dissipation section 16 may be made of the same metal as the external connection electrodes 12a (112a) and 12b (112b), or it may be made of a different metal.

[0067] Variation 4 In the light-emitting devices of embodiments 2 to 4, both or one of the external connection electrodes 12a (112a) and 12b (112b) have extended portions 12aa (112aa) and 12bb as shown in Figure 7B. (112bb) may be present.

[0068] Variation 5 In the substrate members and light-emitting devices of Embodiments 1 to 4, the substrate is described as a ceramic body. However, the substrate is not limited to ceramic bodies. For example, it may be a resin body such as glass epoxy, which is inexpensive and versatile while having insulating properties or heat resistance to electrodes. Furthermore, to compensate for the heat dissipation properties of the resin body, a conductive material with high thermal conductivity, such as aluminum, silver, or copper, or an insulating material with high thermal conductivity, such as aluminum nitride or silicon nitride, may be bonded to the underside of the resin body.

[0069] Embodiment 5 The following describes the base member and light-emitting device of Embodiment 5, as well as the method for manufacturing the base member and the method for manufacturing the light-emitting device. The light-emitting device of Embodiment 5 includes a plurality of light-emitting elements 301 on a base member 310, and the base member 310 of Embodiment 5 is a base member 310 on which a plurality of light-emitting elements 301 can be mounted, and includes various forms described later.

[0070] Here, we will first describe a specific example of the light-emitting device of Embodiment 5 with reference to Figures 9A and 9B. The light-emitting device 300 in Figure 9A includes a base member 310 and a plurality of light-emitting elements 301 mounted on the first surface of the base member 310. The first surface of the base member 310 is provided with a positive electrode 312a and a negative electrode 312b, and a plurality of light-emitting elements 301 are connected between the positive electrode 312a and the negative electrode 312b. In the example shown in Figure 9A, there are 36 light-emitting elements 301, which are divided into three groups of 12 elements each, and in each group, the 12 light-emitting elements 301 are connected in series. The positive electrode 312a includes a pad portion 322a, a lead portion 332a connected to the pad portion 322a, and a connection portion connected to the lead portion 332a, while the negative electrode 312b includes a pad portion 322b, a lead portion 332b connected to the pad portion 322b, and a connection portion connected to the lead portion 332b. Furthermore, the p-side element electrode of the light-emitting element 301 located at the front of each group is connected to the connection part of the positive electrode 312a, and the n-side element electrode of the light-emitting element 301 located at the rear of each group is connected to the connection part of the negative electrode 312b. In other words, three groups, each containing 12 light-emitting elements 301 connected in series, are connected in parallel between the positive electrode 312a and the negative electrode 312b. Here, the connections between the light-emitting elements 301 and the connections between the electrodes 312a and 312b of the substrate member 310 and the light-emitting elements 301 are made by wire bonding. In the example shown in Figures 9A and 9B, the light-emitting element 301 is a face-up type light-emitting element that includes an n-side element electrode and a p-side element electrode on its upper surface, which is the light-emitting surface side. In addition, the light-emitting device shown in Figures 9A and 9B has three groups connected in parallel and a protective element 342 such as a Zener diode connected in parallel. Here, a face-up type light-emitting element is used for explanation, but a face-down type may also be used. That is, the light-emitting element is mounted face-down on the substrate member, and then a frame is formed to surround the light-emitting element. Then, the first and second surfaces of the substrate member, the frame, and the light-emitting element are covered with an insulating film. In the mounting area surrounded by the frame, a sealing member is placed to cover the light-emitting element. Then, a laser is irradiated onto the electrodes provided on the substrate member and covered with the insulating film to expose a part of the electrodes. In this way, a light-emitting device using a face-down type light-emitting element can be provided. The following describes the base member and light-emitting device of Embodiment 5 and its modified forms.

[0071] First, the base member will be explained with reference to Figures 8A to D. Although the light-emitting element is omitted here, after placing the light-emitting element on this base member, the light-emitting element can be connected to electrodes 312a and 312b with wires to form a light-emitting device. The connection between the light-emitting element and electrodes 312a and 312b can be electrically connected by wires to the pad portion 322a or pull-out portion 332a of electrode 312a on the outside of the frame 350 surrounding the mounting area of ​​the light-emitting element, and to the element electrodes of the light-emitting element. Alternatively, before placing the light-emitting element on the substrate member 310, an insulating film 30 is formed on the substrate and electrodes by atomic layer deposition, and the insulating film 30 is partially removed by laser irradiation at the location where the light-emitting element will be mounted. Laser irradiation may also be performed at the locations where the wires will be connected to remove the insulating film 30. The light-emitting element is mounted on the electrodes from which the insulating film 30 has been removed. Then, a frame is formed to surround the mounting area where the light-emitting element is mounted. Subsequently, a sealing member containing phosphor is placed inside the frame in a plan view, i.e., in the mounting area where the light-emitting element is mounted. Before placing the sealing member, an insulating film may be formed on the light-emitting element again, or after placing the sealing member, an insulating film may be formed to cover the sealing member. This makes it difficult for moisture from the outside to reach the locations where the first insulating film was removed. Finally, or before placing the sealing member, the insulating film 30 covering the electrodes, i.e., the pad portions, which are the locations connected to the external terminals, is removed by laser irradiation. A light-emitting device can also be manufactured in this manner. Here, the base member 310 shown in Figure 8B can be made of the same material as the base member used in the light-emitting device shown in Figures 9A and 9B, and the base member shown in Figures 8C and 8D is a modified form thereof. The base member 310 shown in Figures 8B, 8C, and 8D differs in the positional relationship between the frame 350 and the insulating film 30, the positional relationship between the pad portion and the insulating film 30, etc., but the electrode structure is the same.

[0072] -Explanation of base components- The base member 310 of this embodiment comprises a base 311 having a first surface and a second surface opposite to the first surface, electrodes 312a and 312b arranged on the first surface of the base 311, and an insulating film 30 covering the first and second surfaces of the base 311 and a portion of the electrodes 312a and 312b. The substrate 311 can be made from a material selected from ceramics or resins such as glass epoxy. As mentioned above, a component with high thermal conductivity may be bonded to the substrate 311 from the viewpoint of heat dissipation. The electrodes 312a and 312b are arranged on the first surface of the substrate 311. As an example, the pad portions 322a and 322b shown in Figure 8A are provided in pairs at diagonal corners of the substrate 311, and the lead portions 332a and 332b are drawn out from the pad portions 322a and 322b along the diagonal. For example, the pad portion 322a and lead portion 332a may be used as the positive electrode 312a, and the pad portion 322b and lead portion 332b may be used as the negative electrode 312b. Furthermore, a protective element 342 for protecting the element may be provided between the positive electrode 312a and the negative electrode 312b. The light-emitting element can be mounted on the same surface of the substrate member 310 as the first surface on which the electrodes 312a and 312b are arranged. In other words, the base member 310 of Embodiment 5 can be used as a face-up type mounting member in which electrodes 312a, 312b and light-emitting elements are provided on the same surface. The insulating film 30 may be formed by atomic layer deposition, and for example, aluminum oxide (Al2O3) may be used. By forming the insulating film 30 by atomic layer deposition, aluminum oxide can also be incorporated into the second surface of the substrate 311. The insulating film 30 covers the lead-out portions 332 (332a, 332b), but at least a portion of the pad portions 322a, 322b is exposed from the insulating film 30. Here, the surface roughness of the pad portions 322a, 322b exposed from the insulating film 30 may be greater than the surface roughness of the lead-out portions 332 (332a, 332b) covered by the insulating film 30. The surface roughness Ra of the pad portions 322a, 322b exposed from the insulating film 30 may be 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less. By making the surface rougher of the pad portions 322a and 322b exposed from the insulating film 30 than the surface roughness of the lead portions 332 (332a and 332b) covered by the insulating film 30, the adhesion between the pad portions 322a and 322b and the solder can be improved when electrically connecting the pad portions 322a and 322b to the outside, for example, with solder. For example, it is preferable that the difference in surface roughness Ra between the lead portions 332a and 332b and the pad portions 322a and 322b is at least 0.1 μm, preferably 0.2 μm or more, and more preferably 0.5 μm or more. This makes it possible to smooth the surface of the lead portions 332a and 332b while roughening the surface of the pad portions 322a and 322b.

[0073] In a preferred embodiment, the substrate member 310 has the surface of the substrate 311 exposed around the pad portions 322a and 322b, and the surface roughness of the exposed surface of the substrate 311 may be greater than the surface roughness of the substrate 311 covered with the insulating film 30. That is, in Figures 8B-8C, the surface roughness of the exposed substrate portion 312 around the pad portions 322a and 322b is rougher than the surface roughness of the substrate 311 covered with the insulating film 30. By making the surface rougher of the exposed substrate portion 312, the wetting and spreading of solder can be suppressed, and the solder can easily return to the pad portion side. Therefore, it is possible to retain solder on the pad portions when soldering to the pad portions 322a and 322b. Alternatively, instead of exposing the entire pad portions 322a and 322b from the insulating film 30, a portion of the pad portions 322a and 322b may be exposed from the insulating film 30 (Figure 8D). In this case, the surface roughness of the pad portions 322a and 322b exposed from the insulating film 30 is greater than that of the pad portions 322a and 322b not exposed from the insulating film 30, i.e., the surface roughness of the pad portions 322a and 322b covered by the insulating film 30. Even in such an embodiment, when electrically connecting the pad portions 322a and 322b to the outside, for example with solder, the adhesion between the pad portions 322a and 322b and the solder can be improved.

[0074] In a preferred embodiment, the base member 310 may be provided with a frame 350 that surrounds the mounting area for mounting the light-emitting element. In Figure 8A, which shows an example of the frame 350, the frame 350 is circular in plan view, but it may also be a polygon such as a square, pentagon, hexagon, or octagon, or an ellipse. Furthermore, one frame may be divided into two or more shapes such as a semicircle, sector, triangle, or square, or multiple frames may be combined. In other words, a single light-emitting device may have not just one mounting area surrounded by a frame, but multiple mounting areas. Phosphors that exhibit different emission colors may be appropriately arranged in the multiple mounting areas. This makes it possible to achieve various emission colors by color tuning. The frame 350 may be made of a thermosetting resin such as silicone resin, epoxy resin, or modified silicone resin. Furthermore, aluminum oxide, titanium oxide, or silicon oxide may be mixed into the thermosetting resin. By mixing aluminum oxide, titanium oxide, etc., with a thermosetting resin, for example, when manufacturing a light-emitting device in which light-emitting elements are arranged inside a frame 350, the light emitted laterally from the light-emitting elements can be reflected by the frame 350 and emitted upward, thereby increasing the light extraction efficiency of the light-emitting device.

[0075] In a preferred embodiment, the frame 350 may be provided on the insulating film 30 (Figure 8B). By forming the frame 350 on the insulating film 30, it is possible to improve the adhesion of the frame. Furthermore, when the frame 350 is formed on the insulating film 30 formed by atomic layer deposition, the surface of the insulating film is smoothed by the dense insulating film formed by atomic layer deposition, making it difficult for the resin of the frame to spread (less likely to bleed), and the edges of the frame 350 can be made sharper. As a result, compared to forming the frame 350 on a substrate not covered with an insulating film, forming the frame 350 on a substrate covered with an insulating film allows for a larger ratio of height to width of the frame 350. In other words, forming the frame 350 on a substrate covered with an insulating film allows for the formation of a frame with a narrow width and high height. Alternatively, instead of forming the frame 350 on the insulating film as described above, the insulating film 30 may be provided after the frame 350 is formed (Figure 8C).

[0076] Next, a light-emitting device equipped with the above-described base member will be explained. -Explanation of the light-emitting device- The light-emitting device 300 of this embodiment comprises the base member 310 described above and a light-emitting element 301 provided in the mounting area. The mounting area provided in the base member 310 refers to the inner area enclosed by the frame 350 in a plan view. In the mounting area of ​​the light-emitting device 300 shown in Figure 9A, which illustrates one specific example described above, multiple light-emitting elements 301 are arranged, and adjacent light-emitting elements 301 are electrically connected by conductive members 311a and 311b. In this specific example, the conductive members 311a and 311b are wires, and the n-side element electrode and p-side element electrode between face-up mounted light-emitting elements are connected by wire bonding. The conductive members 311a and 311b are conductive wires with low electrical resistance and easy processing, such as gold, silver, copper, aluminum, or alloys thereof. Furthermore, when using conductive wires, it is preferable to protect the wires with a thermosetting encapsulating resin such as silicone resin, epoxy resin, or modified silicone resin. In the light-emitting device 300 of the specific example shown in Figures 9A and 9B, an example using conductive wires as conductive members 311a and 311b is shown, but it is also possible to use elements in which the n-side element electrode and p-side element electrode are provided on the side opposite the light-emitting surface as light-emitting elements and to perform flip-chip mounting. As described in the above-mentioned description of the base member, the surface roughness of the pad portions 322a and 322b exposed from the insulating film 30 is greater than the surface roughness of the pad portions 322a and 322b covered by the insulating film 30, or the surface roughness of the lead-out portions 332 (332a and 332b) covered by the insulating film 30. Therefore, when electrically connecting the pad portions 322a and 322b to the outside, for example with solder, the adhesion between the pad portions 322a and 322b and the solder can be improved. Here, the surface roughness Ra of the pad portions 322a and 322b exposed from the insulating film 30 may be 0.3 μm or more and 30 μm or less, preferably 0.3 μm or more and 3 μm or less.

[0077] As a suitable light-emitting device 300, a frame 350 may be provided around a plurality of light-emitting elements 301. The frame 350 may be provided on the base member in advance before mounting the light-emitting elements 301, or the frame 350 may be provided around the light-emitting elements 301 after mounting the light-emitting elements 301 on a base member that does not have a frame. Figures 9A and 9B show a specific example in which the frame 350 is provided around the light-emitting elements 301 after mounting the light-emitting elements 301 on a base member 310 that does not have a frame. As described above, the frame 350 may be made of a thermosetting resin mixed with aluminum oxide, titanium oxide, or silicon oxide. By providing the frame 350, light from the light-emitting elements 301 can be appropriately reflected.

[0078] As a suitable light-emitting device 300, a sealing member 360 that seals the area surrounded by the frame 350 may be further provided. The sealing member 360 is electrically insulating and is a member that can transmit light emitted from the light-emitting element 301. It is preferable that the material is fluid before solidification, and the sealing member 360 can be easily formed by applying it using its fluidity before solidification and then curing it. As the sealing member 360, a light-transmitting resin with a light transmittance of 70% or more is preferably selected. Examples of light-transmitting resins include silicone resin, modified silicone resin, epoxy resin, phenolic resin, polycarbonate resin, acrylic resin, TPX resin, polynorpulnene resin, or hybrid resins containing one or more of these resins. Among these, silicone resin is preferred because it has excellent heat resistance and light resistance and low volume shrinkage after solidification. Dimethyl silicone resin is particularly preferred because it has excellent heat resistance and light resistance. The sealing member 360 may contain a phosphor that is excited by light from the light-emitting element 301 and converted to a different wavelength. As an example of a phosphor, a fluoride phosphor may be used from the viewpoint of improving color rendering. Examples of fluoride phosphors include K2SiF6:Mn (KSF phosphor) or K2(Si,Al)F6:Mn (KSAF phosphor). Here, in the formula representing the composition of the phosphor, the elements before the colon (:) represent the elements constituting the matrix crystal and their molar ratios, and the elements after the colon (:) represent the activating elements. In the formula representing the composition of the phosphor, multiple elements separated by commas (,) indicate that at least one of these multiple elements is included in the composition, and two or more elements may be included in combination. Note that the phosphor included in the sealing member is not limited to a fluoride phosphor, and other phosphors may be used in accordance with the emission peak wavelength of the light-emitting element. Furthermore, the sealing member 360 may also contain a light-diffusing material (for example, an inorganic material such as titanium dioxide) that diffuses light over a wide area. By including a light-diffusing material, it is possible to suppress unevenness in the light emission area.

[0079] As a suitable light-emitting device 300, the insulating film 30 may cover the frame 350 and / or the sealing member 360. In other words, it may be a different configuration from Figure 9B, such as a light-emitting device in which the insulating film 30 covers the frame 350 as shown in Figure 9C, or a light-emitting device in which the insulating film 30 covers both the frame 350 and the sealing member 360 as shown in Figure 9D. By using such a covering method with the insulating film 30, it is possible to reduce the amount of moisture caused by humidity in the atmosphere entering the frame 350, sealing member 360, and light-emitting element 301. Furthermore, to reduce the ingress of moisture into the light-emitting device, the light-emitting device shown in Figure 9B may also be provided with an additional sealing member 362 on the outside of the sealing member 360. For example, as shown in Figure 9E, the sealing member may be made of multiple layers (e.g., two layers), and the outer sealing member 362 may be made of a material with lower moisture permeability than the inner sealing member 361. Furthermore, as an additional light-emitting device, for example, another frame 352 and sealing member 362 may be placed in addition to the frame 351 and sealing member 361 as shown in Figure 9F to reduce the amount of moisture entering the light-emitting device. Also, the phosphor contained in the sealing member 361 and the phosphor contained in the sealing member 362 may be of different emission colors. For example, a red-emitting phosphor such as KSF phosphor, KSAF phosphor, CASN phosphor, or SCASN phosphor may be used as the phosphor contained in the sealing member 361, and a phosphor that emits green to yellow, such as YAG phosphor, silicate phosphor, G-LuAG, or TAG, may be used as the phosphor contained in the sealing member 362. Alternatively, as another light-emitting device, for example, a light-transmitting member 370 with low moisture permeability may be placed on top of a sealing member 360 as shown in Figure 9G to reduce the amount of moisture entering the light-emitting device. Examples of the light-transmitting member 370 with low moisture permeability include glass and hydrophobic resin. Furthermore, as an alternative light-emitting device, for example, the light-emitting device shown in Figure 9B may have its frame 350 and / or sealing member 360 further coated with an insulating film to reduce the amount of moisture entering the light-emitting device.

[0080] Next, we will explain the manufacturing methods for these devices. First, we will explain the manufacturing method for the light-emitting device. -Explanation of the manufacturing method of the light-emitting device- In the manufacturing method of the base member described above, which does not include a frame, the light-emitting device 300 of this embodiment includes a preparation step of 2-1. pre-mounting step, 2-2. light-emitting element mounting step, and 2-3. insulating film formation step. Furthermore, the manufacturing method of the light-emitting device includes a frame formation step of forming a frame 350 that surrounds the light-emitting element 301. The method for manufacturing the light-emitting device of this embodiment will be described in more detail below.

[0081] 2-1. Pre-implementation process In the pre-assembly process, a structure is prepared that includes electrodes 312a and 312b, which are provided with pad portions 322a and 322b connected to the outside and lead portions 332 (332a and 332b) extended from the pad portions 322a and 322b.

[0082] 2-2. Light-emitting element mounting process In the light-emitting element mounting process, the light-emitting elements 301 are mounted on the mounting area of ​​the substrate member 310 prepared in the pre-mounting process. As an example, the light-emitting device shown in Figure 9A has multiple light-emitting elements 301 mounted on the mounting area, and the multiple mounted light-emitting elements 301 are electrically connected to each other using conductive wires.

[0083] 2-3. Insulating film formation process In the insulating film formation process, the substrate member 310, the light-emitting element 301, and the electrodes 312a and 312b are coated with an insulating film 30. The insulating film 30 is preferably formed by atomic layer deposition. As an example of the insulating film 30, aluminum oxide may be formed.

[0084] After the preparation steps described above (2-1. Pre-mounting steps, 2-2. Light-emitting element mounting steps, 2-3. Insulating film formation steps), the electrode exposure step is performed. <Electrode exposure process> In this embodiment, the electrode exposure step is performed to expose the pad portions 322a and 322b of the electrodes 312a and 312b from the insulating film 30. That is, the insulating film 30 on the pad portions 322a and 322b is removed by irradiating them with laser light. At this time, it is preferable to use a pulsed laser, and the pulse energy of the pulsed laser light is set to a range of, for example, 1 μJ or more and 1000 J or less, preferably 2 μJ or more and 300 μJ or less, more preferably 3 μJ or more and 100 μJ or less, and more preferably 3 μJ or more and 10 μJ or less. The pulse width of the laser light is set to a range of, for example, 100 femtoseconds or more and 2000 femtoseconds or less, preferably 100 femtoseconds or more and 1000 femtoseconds or less, and more preferably 100 femtoseconds or more and 500 femtoseconds or less. Thus, in the electrode exposure process of this embodiment, the pad portions 322a and 322b of electrodes 312a and 312b are exposed from the surface of the insulating film 30, while the lead portions 332 (332a and 332b) of electrodes 312a and 312b are not exposed from the insulating film 30. Therefore, since the surface roughness of the pad portions 322a and 322b is greater than that of the lead portions 332 (332a and 332b), when electrically connecting the pad portions 322a and 322b to the outside, for example with solder, the adhesion between the pad portions 322a and 322b and the solder can be improved. Furthermore, in the electrode exposure process, it is preferable to irradiate an area larger than the area of ​​the pad portions 322a and 322b with laser light in order to completely expose the pad portions 322a and 322b in a plan view. By setting the irradiation area of ​​the laser light in this way, a substrate exposure portion 312 in which the substrate 311 is exposed can be formed. Since the surface roughness of the substrate exposure portion 312 is rougher than the surface roughness of the substrate 311 covered with the insulating film 30, the surface wettability is increased, making it easier to retain solder on the pad portions 322a and 322b when soldering them. In the electrode exposure process, it is preferable that the laser beam, in a plan view, scans the entire surface of the pad portions 322a and 322b at least once. In other words, the surfaces of the pad portions 322a and 322b may be roughened in line with the scanning direction of the laser beam. For example, the pad portions 322a and 322b may have grooves formed in a straight line in the same direction, or they may have grooves formed in a grid pattern.

[0085] A suitable method for manufacturing a light-emitting element may include a frame forming step of forming a frame 350 that surrounds the mounted light-emitting element 301. <Frame formation process> The frame 350 may be made of a thermosetting resin such as silicone resin, epoxy resin, or modified silicone resin. Furthermore, aluminum oxide, titanium oxide, or silicon oxide may be mixed with the thermosetting resin. The frame 350 may be formed by methods such as drawing while dispensing resin with a dispenser, resin printing, transfer molding, or compression molding. By forming the frame 350 using such methods, when light is irradiated from a light-emitting element mounted inside the frame 350, the amount of light can be increased by light reflection by the frame 350.

[0086] Here, the frame 350 may be formed after the insulating film 30 has been formed. In this case, the insulating film 30 and the frame 350 will be in a positional relationship as shown in Figure 9B, for example. By forming the frame 350 on the insulating film 30 in this way, it is possible to improve the adhesion between the frame 350 and the insulating film compared to when the frame is formed on metal.

[0087] Furthermore, the frame 350 may be formed before the insulating film 30 is formed. In this case, the insulating film 30 and the frame 350 will be in a positional relationship as shown in Figure 9C, for example. By forming the insulating film 30 on the frame 350 in this way, it is possible to reduce the amount of moisture that enters the frame 350 due to humidity in the atmosphere, etc. For example, even if a phosphor that is sensitive to moisture is used and the phosphor deteriorates and components of the phosphor leach out, corrosion of the electrode can be suppressed.

[0088] A suitable method for manufacturing a light-emitting element may further include a sealing step after the frame formation step, in which the region surrounded by the frame 350 is sealed. <Sealing process> The sealing member 360 is preferably made of the light-transmitting resin described above, and may further contain a phosphor (e.g., KSF phosphor or KSAF phosphor) and / or a light-diffusing material (e.g., an inorganic material such as titanium dioxide). Since the sealing member 360 is fluid before solidification, it may be sealed by supplying the fluid material to the area surrounded by the frame 350 and then solidifying it. By sealing the mounting area with the sealing member 360 in this way, the light-emitting element 301 and conductive wires, etc., that electrically connect the light-emitting element 301 can be protected. In addition, by including a phosphor or light-diffusing material in the sealing member 360, the light-emitting performance of the light-emitting device can be improved.

[0089] Here, the insulating film formation step and electrode exposure step described above may be performed after the sealing step. In this case, the insulating film 30, the frame 350, and the sealing member 360 will be in the positional relationship shown in Figure 9D. By forming the insulating film 30 so as to cover the frame 350 and the sealing member 360 in this way, it is possible to reduce the amount of moisture caused by humidity in the atmosphere entering the frame 350 and the sealing member 360.

[0090] Furthermore, as another embodiment of the manufacturing method for the light-emitting device, in the sealing step, the sealing member 360 may be made of multiple layers (for example, two layers), and the outer sealing member 360 may be made of a material with lower moisture permeability than the inner sealing member 360 to manufacture the light-emitting device (Figure 9E). Furthermore, as another method for manufacturing a light-emitting device, a light-emitting device (Figure 9F) may be manufactured by performing a separate frame formation step in which another frame 350 is formed on the sealing member after the sealing step, and another sealing step in which the area surrounded by the other frame is sealed. Furthermore, as another method for manufacturing a light-emitting device, a light-emitting device (Figure 9G) may be manufactured in which, after the sealing process, a light-transmitting member 370 with low moisture permeability (for example, glass, fluororesin, etc.) is placed directly or indirectly on top of the sealing member to reduce the amount of moisture entering the light-emitting device.

[0091] The above describes the manufacturing method of the light-emitting device of this embodiment (a manufacturing method of a light-emitting device having a base member and an electrode and an electrically connected light-emitting element). However, the individual process elements of the above manufacturing method may also be used to describe a "manufacturing method for a base member". In other words, as the manufacturing method for a base member described in Embodiment 5, in the preparation step, a structure including an electrode having a pad portion connected to the outside and a pull-out portion drawn out from the pad portion may be prepared, and in the electrode exposure step, the pad portions 322a and 322b may be exposed from the insulating film 30.

[0092] Furthermore, in the preparation step, a structure including a frame surrounding the mounting area may be prepared. Alternatively, in the preparation step, the frame 350 may be formed after the insulating film 30 is formed (for example, the base member shown in Figure 8B). Alternatively, in the preparation step, the frame 350 may be formed before the insulating film 30 is formed (for example, the base member shown in Figure 8C).

[0093] While embodiments of this disclosure have been described above, this disclosure is not limited to these embodiments. Modifications, additions, etc., of components are permitted as appropriate, as long as they encompass the technical concept of this disclosure.

[0094] 100, 200, 300 Light-emitting devices 1,101,301 light-emitting elements 1a, 1b Element electrodes 311a, 311b Conductive members 2,342 protective elements 10 Mounting board 11 circuit boards 12a, 12b, 112a, 112b External connection electrodes 12aa,112aa,12bb,112bb extension part 13a, 13b, 113a, 113b Element connection electrodes 14a,14b,114a,114b Through electrode 312a, 312b electrode 322a, 322b Pad section 332, 332a, 332b Drawer section 16 Heat dissipation part 21a, 21b Connecting members 30 insulating film 110 packages 111 Ceramic substrate 310 Base member 311 Base 312 Exposed base part 350,351,352 Frame 360, 361, 362 Sealing member 370 Translucent material 150 Translucent lid 151 Spacer 230 Distributed Bragg Reflective Film 230a,230b opening 230A,230B opening

Claims

1. A substrate having a first surface and a second surface opposite to the first surface, The base body includes a pad portion and a lead portion electrically connected to the pad portion, and an electrode disposed on the first surface of the base body, A base member comprising an insulating film covering the aforementioned extension portion, The insulating film is a distributed Bragg reflective film, comprising two or more dielectric films formed to a predetermined thickness, wherein the two or more dielectric films include a first dielectric film and a second dielectric film having different refractive indices, and the first and second dielectric films each contain at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxide nitride, and the dielectric multilayer film is formed by alternately stacking the first and second dielectric films, wherein the dielectric multilayer film has a reflectivity of 70% or more in the range of 350 nm to 410 nm and a reflectivity of 20% or less in the range of 500 nm to 535 nm. At least a portion of the pad portion is exposed from the insulating film, and the surface roughness of the pad portion in the exposed portion is greater than the surface roughness of the drawer portion. The surface roughness Ra of the pad portion exposed from the insulating film is 0.3 μm or more and 3 μm or less. A base member in which the difference between the surface roughness Ra of the drawer portion and the surface roughness Ra of the pad portion is 0.2 μm or more.

2. A substrate having a first surface and a second surface opposite to the first surface, The base body includes a pad portion and a lead portion electrically connected to the pad portion, and an electrode disposed on the first surface of the base body, A base member comprising an insulating film covering the aforementioned extension portion, The insulating film is a distributed Bragg reflective film, comprising two or more dielectric films formed to a predetermined thickness, wherein the two or more dielectric films include a first dielectric film and a second dielectric film having different refractive indices, and the first and second dielectric films each contain at least one selected from the group consisting of silicon oxide, aluminum oxide, niobium oxide, tantalum oxide, aluminum nitride, silicon nitride, and silicon oxide nitride, and the dielectric multilayer film is formed by alternately stacking the first and second dielectric films, wherein the dielectric multilayer film has a reflectivity of 70% or more in the range of 350 nm to 410 nm and a reflectivity of 20% or less in the range of 500 nm to 535 nm. A portion of the pad is exposed from the insulating film, and the surface roughness of the pad in the exposed portion is greater than the surface roughness of the pad covered with the insulating film. The surface roughness Ra of the pad portion exposed from the insulating film is 0.3 μm or more and 3 μm or less. A base member in which the difference between the surface roughness Ra of the drawer portion and the surface roughness Ra of the pad portion is 0.2 μm or more.

3. The substrate member according to claim 1 or 2, wherein the surface of the substrate is exposed around the pad portion, and the surface roughness of the exposed surface of the substrate is greater than the surface roughness of the substrate covered with the insulating film.

4. The base member according to any one of claims 1 to 3, further comprising a frame surrounding the mounting area.

5. The base member according to claim 4, wherein the frame is provided on the insulating film.

6. A light-emitting device comprising a base member according to any one of claims 1 to 5 and a light-emitting element provided in the mounting area.

7. The light-emitting device according to claim 6, wherein the light-emitting element has a peak wavelength in the range of 280 nm to 410 nm.

8. The light-emitting device according to claim 4 or claim 5 or 6, which references claim 4, further comprising a sealing member for sealing the area enclosed by the frame.

9. The light-emitting device according to claim 8, referencing claim 4, wherein the insulating film covers the frame and / or the sealing member.

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