Substrate processing apparatus and substrate processing method

Abstract

To provide a device and a method capable of narrowing a range in which a process liquid atmosphere containing particles of process liquid is diffused while utilizing energy efficiently.SOLUTION: A substrate processing device 1 includes: a nozzle 31 which generates multiple droplets scattered downward toward an upper surface of a substrate W from at least one discharge port 94; and a shield plate 103 including an inner periphery 103i enclosing a lower surface 90 of the nozzle 31 when the nozzle 31 is viewed from below, an annular lower surface 103L extending outward from the inner periphery 103i and facing the upper surface of the substrate W, and an annular upper surface 103u extending outward from the inner periphery 103i above the lower surface 103L. The nozzle 31 and the shield plate 103 form a connection space which connects an upper space, located above the upper surface 103u and at an outer side relative to the inner periphery 103i, with an inner space, located at an inner side of the inner periphery 103i. The connection space is a space which is connected to the inner space vertically and connected to the upper space horizontally.SELECTED DRAWING: Figure 8

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of the substrate include a semiconductor wafer, a substrate for an FPD (Flat Panel Display) such as a liquid crystal display device or an organic EL (electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.

Background Art

[0002] Patent Document 1 discloses a chemical liquid nozzle that discharges a chemical liquid such as SPM (a mixed liquid of sulfuric acid and hydrogen peroxide solution) toward the upper surface of a substrate, and a diffusion prevention cover that receives droplets of the chemical liquid scattered upward. Patent Document 1 further discloses a suction pipe that sucks the fluid in the diffusion prevention cover from a suction port that opens on the inner surface of the diffusion prevention cover, and an exhaust facility or a suction device that sucks the fluid in the suction pipe.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In Patent Document 1, droplets of the chemical liquid scattered upward are received by the diffusion prevention cover, and the fluid in the diffusion prevention cover such as the chemical liquid atmosphere (gas containing the chemical liquid) is sucked from the suction port that opens on the inner surface of the diffusion prevention cover into the suction pipe. The suction pipe described in Patent Document 1 is connected to an exhaust facility or a suction device. Extra energy is required to suck the fluid in the diffusion prevention cover into the suction pipe, and there is room for improvement in the efficient use of energy.

[0005] Therefore, one of the objectives of the present invention is to provide a substrate processing apparatus and a substrate processing method that can efficiently utilize energy while narrowing the range over which the processing liquid atmosphere containing particles of the processing liquid diffuses. [Means for solving the problem]

[0006] One embodiment of the present invention provides a substrate processing apparatus comprising: a nozzle that generates a plurality of droplets that scatter downward toward the upper surface of a horizontal substrate, the nozzle having a lower surface with at least one discharge port opening for discharging liquid downward; and a shield plate that, when viewed from below, includes an inner circumference surrounding the lower surface of the nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface, wherein the nozzle and the shield plate form a connecting space that connects an upper space, which is a space above the upper surface of the shield plate and outside the inner circumference, to an inner space, which is a space inside the inner circumference, and the connecting space is a space that is vertically connected to the inner space and horizontally connected to the upper space.

[0007] This configuration generates multiple droplets that scatter downwards from the bottom surface of the nozzle toward the top surface of a horizontal substrate. These droplets collide with the top surface of the substrate or the liquid on the substrate. At this time, splashes are generated that scatter upwards from the substrate. These splashes collide with the bottom surface of the shield plate facing the top surface of the substrate and fall. This narrows the area over which the processing liquid atmosphere containing processing liquid particles diffuses.

[0008] Furthermore, when the nozzle generates multiple droplets, an airflow is generated that flows downward from the underside of the nozzle. This airflow flows downward from the underside of the nozzle towards the top surface of the substrate. Subsequently, this airflow spreads vertically between the underside of the shield plate and the top surface of the substrate, flowing radially away from the nozzle. The underside of the shield plate restricts the vertical spread of the airflow and minimizes the decrease in the horizontal velocity component of the airflow. As a result, the horizontal velocity component of the airflow can be maintained at a high level even after it has passed between the shield plate and the substrate, allowing the airflow to reach components surrounding the substrate, such as guards.

[0009] In addition, the nozzle and shield plate form a connecting space that connects the upper space, which is the space above the top surface of the shield plate and outside the inner circumference of the shield plate, to the inner space, which is the space inside the inner circumference of the shield plate. The connecting space is located above the inner space and inside the upper space. The connecting space is connected vertically to the inner space and horizontally to the upper space. The lower space, which is the space between the bottom surface of the shield plate and the top surface of the substrate, is connected to the upper space via the inner space and the connecting space.

[0010] The airflow flowing downward from the underside of the nozzle can pass inside the inner circumference of the shield plate. Furthermore, this airflow flows radially away from the nozzle between the underside of the shield plate and the top surface of the substrate. Due to the viscosity of the gas, the gas near the nozzle or shield plate is attracted towards the airflow flowing downward from the nozzle and the airflow flowing radially along the top surface of the substrate, and flows together with these airflows.

[0011] The shield plate acts as a barrier to the gas drawn towards the airflow formed by the nozzle, diverting the gas. This can generate a downward suction force that draws the gas into the inner space. When such a suction force is generated, the mist floating in the upper space is drawn into the inside of the shield plate through the connecting space between the upper space and the inner space, and flows together with the airflow formed by the nozzle. This reduces the area over which the mist floating in the upper space diffuses.

[0012] Furthermore, since the suction force is generated by utilizing the airflow formed by the nozzle, energy does not need to be consumed solely for generating the suction force. Therefore, while efficiently utilizing energy, the area over which the processing liquid atmosphere, such as mist, diffuses in the upper space can be narrowed. This reduces the environmental burden while mitigating or preventing contamination of the substrate or nearby components.

[0013] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0014] When the nozzle is viewed from above, at least a portion of the inner circumference of the shield plate is visible.

[0015] With this configuration, when the nozzle is viewed from above, at least a portion of the inner circumference of the shield plate is visible and does not overlap with other components. Therefore, the upper space, that is, the space above the top surface of the shield plate and outside the inner circumference of the shield plate, is connected to the inner space, which is the space inside the inner circumference of the shield plate. As a result, mist floating in the upper space flows into the inner space without being obstructed by other components. This allows the mist floating in the upper space to be efficiently drawn into the inside of the shield plate.

[0016] At least a portion of the lower surface of the shield plate is positioned at the same height as the lower surface of the nozzle, or at a height higher than the lower surface of the nozzle.

[0017] In this configuration, the lower surface of the nozzle is positioned at a height equal to or lower than at least a portion of the lower surface of the shield plate. At least one discharge port for discharging liquid and gas downwards opens on the lower surface of the nozzle. Even if droplets are generated that scatter diagonally upward from the lower surface of the nozzle, these droplets can be made to collide with the lower surface of the shield plate and fall down. This narrows the area over which the processing liquid atmosphere diffuses.

[0018] The substrate processing apparatus further includes a lifting actuator that moves the shield plate up and down relative to the nozzle.

[0019] In this configuration, the vertical distance from the top surface of the substrate to the bottom surface of the shield plate can be increased or decreased by moving the shield plate up and down relative to the nozzle. Increasing this distance reduces the resistance acting on the airflow between the shield plate and the substrate, and the decrease in the horizontal velocity component of the airflow becomes smaller. Decreasing this distance increases the suction force that draws the gas downward into the inner space. Therefore, by changing the vertical position of the shield plate relative to the nozzle, the velocity of the airflow and the magnitude of the suction force can be adjusted.

[0020] If the substrate processing apparatus further includes a nozzle actuator for horizontally moving the nozzle and shield plate, the lifting actuator may increase the vertical distance from the upper surface of the substrate to the lower surface of the shield plate as the shortest horizontal distance from the center of the substrate to the nozzle increases. In this way, even when the airflow reaches the outer periphery of the substrate, a large horizontal velocity component of the airflow can be maintained, and the airflow can be more reliably delivered to members surrounding the substrate, such as guards.

[0021] The substrate processing apparatus further comprises a mist generator held in the nozzle, which generates a mist of cleaning solution.

[0022] According to this configuration, a mist generator held by the nozzle generates a mist of the cleaning liquid. The processing liquid atmosphere floating in the vicinity of the nozzle contacts the mist of the cleaning liquid generated from the mist generator. By this contact, the particles of the processing liquid combine with the particles of the cleaning liquid and change into larger and heavier liquid particles. Since the weight of the particles increases, it becomes difficult for the processing liquid atmosphere to flow upward, and the range in which the processing liquid atmosphere diffuses becomes narrower. In particular, since the mist of the cleaning liquid is brought into contact with the processing liquid atmosphere in the vicinity of the nozzle which is the main source of the processing liquid atmosphere, the diffusion range of the processing liquid atmosphere can be effectively narrowed. Thereby, the processing liquid atmosphere adhering to the substrate after drying or the members arranged in the vicinity of the substrate can be eliminated or reduced, and the contamination of the substrate or the like caused by the processing liquid atmosphere can be reduced.

[0023] The substrate processing apparatus further includes a support arm that connects the shield plate to the nozzle, and the mist generator includes a liquid tank that stores the cleaning liquid in at least one of the nozzle and the shield plate, and an ultrasonic vibrator that generates the mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank.

[0024] According to this configuration, instead of evaporating the cleaning liquid in the liquid tank with a heater or spraying the cleaning liquid onto a mist nozzle, the cleaning liquid in the liquid tank provided in at least one of the nozzle and the shield plate is vibrated by an ultrasonic vibrator to generate a mist of the cleaning liquid. The ultrasonic vibrator is superior to the heater in that it can generate a mist in a shorter time, and is superior to the mist nozzle in that it can generate a finer mist with a relatively simple configuration. By making the particles of the cleaning liquid smaller, the time during which the mist of the cleaning liquid floats can be extended, and more of the processing liquid atmosphere can be brought into contact with the mist of the cleaning liquid.

[0025] The substrate processing apparatus further includes a nozzle actuator that horizontally moves the nozzle, the shield plate, and the mist generator while maintaining the position of the mist generator with respect to the nozzle constant.

[0026] According to this configuration, while maintaining the position of the mist generator relative to the nozzle constant, the nozzle is moved horizontally. Therefore, the mist of the cleaning liquid generated from the mist generator follows the nozzle and lingers near the nozzle even after the nozzle has moved. Thus, it is not necessary to fill the chamber that houses the substrate with the mist of the cleaning liquid, and the consumption of the cleaning liquid can be reduced compared to such a case. Thereby, while reducing the energy required for substrate processing and the environmental load, the diffusion range of the processing liquid atmosphere can be efficiently narrowed.

[0027] The outer diameter of the shield plate is smaller than the outer diameter of the substrate.

[0028] According to this configuration, since the outer diameter of the shield plate is smaller than the outer diameter of the substrate, when the shield plate is disposed above the substrate, the outer periphery of the shield plate is surrounded by the outer periphery of the substrate in a plan view. When the outer diameter of the shield plate is smaller than the outer diameter of the substrate, the volume of the shield plate can be reduced compared to the case where the outer diameter of the shield plate is greater than or equal to the outer diameter of the substrate. Thereby, the chamber that houses the substrate can be miniaturized, or the number of members housed in the chamber can be increased.

[0029] The substrate processing apparatus further includes a nozzle actuator that horizontally moves the nozzle and the shield plate. The nozzle actuator may horizontally move the nozzle and the shield plate while maintaining the position of the shield plate relative to the nozzle constant.

[0030] According to this configuration, by horizontally moving the nozzle with the nozzle actuator, the collision position where a plurality of droplets generated by the nozzle collide with the upper surface of the substrate is moved within the upper surface of the substrate. Thereby, the uniformity of substrate processing can be enhanced. Further, since the nozzle actuator also horizontally moves the shield plate, the range in which the processing liquid atmosphere diffuses can be narrowed regardless of the position where the nozzle is disposed.

[0031] The nozzle is a two-fluid nozzle that generates a plurality of droplets that scatter downward toward the upper surface of the substrate by discharging liquid and gas downward from at least one discharge port that opens on the lower surface of the nozzle.

[0032] In this configuration, multiple droplets are generated that scatter downward toward the upper surface of a horizontal substrate by colliding liquid and gas inside or outside the two-fluid nozzle. The gas flowing downward from the bottom surface of the two-fluid nozzle may pass inside the inner circumference of the shield plate. Furthermore, this gas flows radially away from the two-fluid nozzle between the bottom surface of the shield plate and the upper surface of the substrate. Due to the viscosity of the gas, the gas near the two-fluid nozzle or the shield plate is attracted towards the airflow flowing downward from the two-fluid nozzle and the airflow flowing radially along the upper surface of the substrate, and flows together with these airflows.

[0033] The shield plate acts as a barrier to the gas that is drawn towards the airflow formed by the two-fluid nozzle, causing the gas to be diverted. This can generate an attractive force that draws the gas downward into the inner space. Furthermore, since the attractive force is generated by utilizing the airflow formed by the liquid and gas discharged from the two-fluid nozzle, energy does not need to be consumed solely for generating the attractive force.

[0034] Another embodiment of the present invention provides a substrate processing method comprising the steps of: discharging a liquid downward from at least one discharge port opening on the lower surface of a nozzle, thereby scattering a plurality of droplets downward toward the upper surface of a horizontal substrate; and, while the nozzle is discharging the liquid, aligning the lower surface of the shield plate, which extends outward from the inner circumference of the shield plate surrounding the lower surface of the nozzle, with the upper surface of the shield plate, which extends outward from the inner circumference above the lower surface of the shield plate and is outside the inner circumference, with the upper space being the space inside the inner circumference, and forming a connecting space with the inner space that is vertically connected to the inner space and horizontally connected to the upper space, when viewed from below, the nozzle and the shield plate. This method can achieve the same effects as the substrate processing apparatus described above. At least one of the features relating to the substrate processing apparatus described above may be added to the substrate processing method. [Brief explanation of the drawing]

[0035] [Figure 1A] This is a schematic plan view showing the layout of a substrate processing apparatus according to the first embodiment of the present invention. [Figure 1B] This is a schematic side view of a substrate processing device. [Figure 2A] This is a schematic diagram showing the inside of the processing unit viewed horizontally. [Figure 2B] This is a schematic plan view showing the inside of the processing unit. [Figure 3] This is a schematic cross-sectional view showing the vertical cross-section of the splash shield. [Figure 4] This is a schematic diagram showing the first chemical nozzle and splash shield viewed horizontally. [Figure 5] This is a schematic diagram of the first chemical nozzle and splash shield viewed from above. [Figure 6] This is a schematic diagram showing the first chemical nozzle and splash shield viewed from below. [Figure 7] This is a schematic diagram illustrating the connecting space that connects the upper space to the inner space. [Figure 8]This is a schematic diagram illustrating the airflow formed by the discharge of liquid and gas from the first chemical nozzle. [Figure 9] This is a schematic diagram illustrating how the airflow passing between the shield plate and the substrate reaches the guard. [Figure 10] This is a schematic diagram showing the positions of the first chemical nozzle and splash shield relative to the substrate in a plan view. [Figure 11] This is a schematic diagram of the first chemical nozzle and splash shield according to the second embodiment of the present invention, viewed horizontally. [Figure 12] This is a schematic diagram of a top view of the first chemical nozzle and splash shield according to a second embodiment of the present invention. [Figure 13] This is a schematic cross-sectional view showing a vertical cross-section of a mist generator according to a third embodiment of the present invention. [Figure 14] This is a schematic diagram of a mist generator viewed from above. [Figure 15] This is a schematic cross-sectional view showing a vertical cross-section of a mist generator according to a fourth embodiment of the present invention. [Figure 16] This is a schematic cross-sectional view showing a different vertical cross-section of the mist generator than that shown in Figure 15. [Figure 17] This is a schematic cross-sectional view showing a vertical cross-section of a splash shield according to another embodiment of the present invention. [Modes for carrying out the invention]

[0036] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0037] Figure 1A is a schematic plan view showing the layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. Figure 1B is a schematic side view of the substrate processing apparatus 1.

[0038] The substrate processing apparatus 1 is a single-wafer type apparatus that processes disc-shaped substrates W, such as semiconductor wafers, one at a time. The substrate processing apparatus 1 comprises a load port LP that holds carriers CA that contain substrates W, a plurality of processing units 2 that process the substrates W transported from the carriers CA on the load port LP with processing fluids such as processing liquid and processing gas, a transport system 5 that transports the substrates W between the carriers CA on the load port LP and the plurality of processing units 2, and a control device 3 that controls the substrate processing apparatus 1.

[0039] Multiple processing units 2 form multiple towers TW, each containing multiple processing units 2. Figure 1A shows an example where four towers TW are formed. As shown in Figure 1B, the multiple processing units 2 contained in one tower TW are stacked vertically. As shown in Figure 1A, the multiple towers TW form two rows aligned in the depth direction of the substrate processing apparatus 1 (a direction perpendicular to the arrangement direction of the multiple load ports LP in a plan view). In a plan view, the two rows face each other via a transport path 4.

[0040] The transport system 5 includes an indexer robot IR that transports substrates W between a carrier CA on a load port LP and a plurality of processing units 2, and a center robot CR that transports substrates W between the indexer robot IR and the plurality of processing units 2. The indexer robot IR is positioned between the load port LP and the center robot CR in a plan view. The center robot CR is positioned on the transport path 4.

[0041] The indexer robot IR includes one or more hands Hi that horizontally support the substrate W. The hands Hi are movable parallel to both the horizontal and vertical directions. The hands Hi are rotatable around a vertical line. The hands Hi can load and unload the substrate W to and from the carrier CA on any load port LP, and can transfer the substrate W to and from the center robot CR.

[0042] The center robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc are movable parallel to both the horizontal and vertical directions. The hands Hc are rotatable around a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can load and unload the substrate W to and from any processing unit 2.

[0043] A carrier CA containing multiple substrates W is placed on a load port LP by a carrier transport robot installed in a manufacturing plant that produces semiconductor equipment, FPDs, etc. An indexer robot IR unloads unprocessed substrates W from the carrier CA on the load port LP and passes the unloaded substrates W to a center robot CR. The center robot CR loads the received substrates W into one of the processing units 2. This processes the substrates W.

[0044] The center robot CR unloads the processed substrates W from the processing unit 2 and hands them over to the indexer robot IR. The indexer robot IR transports the received substrates W to the load port LP and loads them into the carrier CA that was originally holding them or into another carrier CA. The carrier CA containing multiple processed substrates W is then transported from the load port LP to the next destination by a carrier transport robot.

[0045] Next, we will describe the processing unit 2.

[0046] Figure 2A is a schematic diagram of the inside of the processing unit 2 viewed horizontally. Figure 2B is a schematic plan view showing the inside of the processing unit 2. As shown in Figure 2A, the processing unit 2 includes a box-shaped chamber 12 having an internal space, a spin chuck 21 that holds a single substrate W horizontally within the chamber 12 and rotates the substrate W around a vertical rotation axis A1 passing through the center of the substrate W, and a plurality of nozzles that supply processing liquids such as chemical solutions and rinsing solutions to the substrate W held by the spin chuck 21.

[0047] As shown in Figure 2B, the chamber 12 includes a box-shaped partition wall 13 through which substrates W transported by the central robot CR (see Figure 1A) pass, and a shutter 17 for opening and closing the input / output port 13b. As shown in Figure 2A, the chamber 12 further includes a rectifier plate 18 positioned below an air outlet 13a that opens in the ceiling surface of the partition wall 13. An FFU (Fan Filter Unit 11) that supplies clean air (air filtered by a filter) is positioned above the air outlet 13a. The air outlet 13a is located at the upper end of the chamber 12, and the exhaust duct 78, described later, is located at the lower end of the chamber 12. The upstream end 78u of the exhaust duct 78 is located inside the chamber 12, and the downstream end of the exhaust duct 78 is located outside the chamber 12.

[0048] The rectifier plate 18 divides the internal space of the chamber 12 into an upper space Su above the rectifier plate 18 and a lower space SL below the rectifier plate 18. The upper space Su between the ceiling surface of the partition wall 13 and the upper surface of the rectifier plate 18 is a diffusion space where clean air diffuses. The lower space SL between the lower surface of the rectifier plate 18 and the floor surface of the partition wall 13 is a processing space where the substrate W is processed. The spin chuck 21 is located in the lower space SL. The vertical distance from the floor surface of the partition wall 13 to the lower surface of the rectifier plate 18 is longer than the vertical distance from the upper surface of the rectifier plate 18 to the ceiling surface of the partition wall 13.

[0049] The FFU 11 supplies clean air to the upper space Su via the air outlet 13a. The clean air supplied to the upper space Su strikes the rectifier plate 18 and diffuses within the upper space Su. The clean air in the upper space Su passes through multiple through holes that penetrate the rectifier plate 18 vertically and flows downward from the entire surface of the rectifier plate 18. The clean air supplied to the lower space SL is drawn into the exhaust duct 78 and discharged from the chamber 12. As a result, a uniform downward flow of clean air flowing downward from the rectifier plate 18 is formed in the lower space SL. The processing of the substrate W is carried out while the downward flow of clean air is formed.

[0050] The spin chuck 21 includes a plurality of chuck pins 22 that horizontally clamp the substrate W, and a disc-shaped spin base 23 that supports the plurality of chuck pins 22. The spin chuck 21 further includes a spin shaft 24 extending downward from the center of the spin base 23, an electric motor 25 that rotates the plurality of chuck pins 22 and the spin base 23 by rotating the spin shaft 24, and a chuck housing 26 that surrounds the electric motor 25.

[0051] The spin base 23 includes a circular upper surface positioned below the substrate W and a cylindrical outer surface extending downward from the outer circumference of the upper surface of the spin base 23. The upper surface of the spin base 23 is parallel to the lower surface of the substrate W. The upper surface of the spin base 23 is separated from the lower surface of the substrate W. The upper surface of the spin base 23 is concentric with the substrate W. The outer diameter of the upper surface of the spin base 23 is greater than the outer diameter of the substrate W. The chuck pin 22 protrudes upward from the outer circumference of the upper surface of the spin base 23.

[0052] As shown in Figure 2A, the nozzles include a first chemical nozzle 31 and a second chemical nozzle 39 that discharge a chemical solution toward the upper surface of the substrate W, and a first rinse nozzle 42 and a second rinse nozzle 45 that discharge a rinse solution toward the upper surface of the substrate W. Figure 2A shows an example in which SPM (a mixture of sulfuric acid and hydrogen peroxide) is discharged from the first chemical nozzle 31 and SC1 (a mixture of ammonia water, hydrogen peroxide, and water) is discharged from the second chemical nozzle 39. In this example, pure water (deionized water: DIW) is discharged from the first rinse nozzle 42 and the second rinse nozzle 45.

[0053] The chemical solution may be a liquid other than SPM and SC1. Specifically, the chemical solution may be a liquid containing at least one of the following: sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid, etc.), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and corrosion inhibitors, or it may be a liquid other than these. The temperature of the chemical solution may be room temperature, or it may be higher or lower than room temperature. The same chemical solution (a chemical solution with the same components and concentration) may be discharged from the first chemical solution nozzle 31 and the second chemical solution nozzle 39.

[0054] The rinsing solution may be a liquid other than pure water. Specifically, the rinsing solution may be a liquid containing at least one of the following: pure water, carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, hydrochloric acid water at a dilution concentration (e.g., about 10-100 ppm), and ammonia water at a dilution concentration (e.g., about 10-100 ppm), or it may be any other liquid. The rinsing solution may also be an organic solvent liquid such as IPA (isopropyl alcohol). The temperature of the rinsing solution may be room temperature, or it may be higher or lower than room temperature. Rinsing solutions with at least one different component and concentration may be discharged from the first rinsing solution nozzle 42 and the second rinsing solution nozzle 45.

[0055] The first chemical nozzle 31 may be a scanning nozzle that moves the collision position of the processing liquid with respect to the substrate W within the upper surface of the substrate W, or it may be a fixed nozzle that cannot move the collision position of the processing liquid with respect to the substrate W. The same applies to the other nozzles. Figure 2A shows an example in which the first chemical nozzle 31, the second chemical nozzle 39, and the first rinse nozzle 42 are scanning nozzles, and the second rinse nozzle 45 is a fixed nozzle.

[0056] The processing unit 2 includes a nozzle moving unit for horizontally moving one or more scan nozzles. There may be one nozzle moving unit connected to two or more scan nozzles, or there may be one nozzle moving unit for each scan nozzle. Figure 2B shows an example in which the first chemical nozzle 31 is connected to the first nozzle moving unit 38, the second chemical nozzle 39 is connected to the second nozzle moving unit 41, and the first rinse solution nozzle 42 is connected to the third nozzle moving unit 44.

[0057] Figure 2B shows an example in which the first nozzle moving unit 38, the second nozzle moving unit 41, and the third nozzle moving unit 44 are each swivel units that move one or more scan nozzles horizontally along an arc-shaped path in a plan view. Because the radius of the arc-shaped path is large, the swivel units move one or more scan nozzles horizontally along a path that can be considered a straight line in a plan view. At least one of the first nozzle moving unit 38, the second nozzle moving unit 41, and the third nozzle moving unit 44 may be a slide unit that moves one or more scan nozzles horizontally along a straight path in a plan view.

[0058] The first nozzle moving unit 38 is an example of a nozzle actuator. The first chemical nozzle 31 is an example of a two-fluid nozzle. A nozzle actuator is an actuator that moves a two-fluid nozzle. An actuator is a device that converts electrical, fluid, magnetic, thermal, or chemical energy into mechanical work. Actuators include electric motors, air cylinders, and other devices. A nozzle actuator may be an electric motor or an air cylinder, or otherwise. The definition of an actuator is the same for other actuators.

[0059] The first nozzle movement unit 38 includes a horizontal drive actuator that moves one or more scan nozzles horizontally by rotating them around a vertical line, and a vertical drive actuator that moves one or more scan nozzles vertically. The same applies to the second nozzle movement unit 41 and the third nozzle movement unit 44. The horizontal drive actuator and the vertical drive actuator are, for example, electric motors. The horizontal drive actuator and the vertical drive actuator may be actuators other than electric motors, such as air cylinders.

[0060] As shown in Figure 2A, the first chemical nozzle 31 is connected to a sulfuric acid pipe 34p that guides sulfuric acid toward the first chemical nozzle 31, and a hydrogen peroxide pipe 35p that guides hydrogen peroxide toward the first chemical nozzle 31. The sulfuric acid valve 34v and the flow control valve 34f are interposed in the sulfuric acid pipe 34p. The hydrogen peroxide valve 35v and the flow control valve 35f are interposed in the hydrogen peroxide pipe 35p. The sulfuric acid pipe 34p is an example of a first component liquid pipe, and the hydrogen peroxide pipe 35p is an example of a second component liquid pipe.

[0061] Although not shown in the diagram, the sulfuric acid valve 34v includes a valve body with an annular valve seat through which a processing liquid such as sulfuric acid passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position where the valve element is in contact with the valve seat and an open position where the valve element is away from the valve seat. The same applies to other valves such as the hydrogen peroxide valve 35v. The actuator may be a pneumatic actuator or an electric actuator, or any other type of actuator. The control device 3 opens and closes the sulfuric acid valve 34v by controlling the actuator.

[0062] When the sulfuric acid valve 34v is opened, sulfuric acid is supplied from the sulfuric acid piping 34p to the first chemical nozzle 31 at a flow rate corresponding to the opening of the flow control valve 34f. When the hydrogen peroxide valve 35v is opened, hydrogen peroxide is supplied from the hydrogen peroxide piping 35p to the first chemical nozzle 31 at a flow rate corresponding to the opening of the flow control valve 35f. When the sulfuric acid valve 34v and the hydrogen peroxide valve 35v are opened, the sulfuric acid and hydrogen peroxide mix together to produce SPM. This SPM is then continuously discharged downward from the first chemical nozzle 31.

[0063] When sulfuric acid and hydrogen peroxide are mixed, high-temperature SPM is generated due to the heat of dilution of the sulfuric acid. The temperature of the SPM discharged from the first chemical nozzle 31 is, for example, higher than 100°C. The temperature of the sulfuric acid before mixing with hydrogen peroxide is, for example, higher than 100°C. The substrate processing apparatus 1 is equipped with a heater 34h for heating the sulfuric acid supplied to the first chemical nozzle 31. The temperature of the hydrogen peroxide before mixing with sulfuric acid is, for example, room temperature (e.g., 20-30°C). The temperature of the hydrogen peroxide before mixing with sulfuric acid may be higher than room temperature.

[0064] The first nozzle moving unit 38 moves the first chemical nozzle 31 horizontally between a processing position in which the processing liquid discharged from the first chemical nozzle 31 is supplied to the upper surface of the substrate W, and a standby position in which the first chemical nozzle 31 is positioned around the spin chuck 21 in a plan view. Figure 2A shows the state in which the first chemical nozzle 31 is in the processing position. Figure 2B shows the state in which the first chemical nozzle 31 is in the standby position.

[0065] The processing unit 2 includes a splash shield 101 that catches splashes of chemical solution generated when the first chemical solution nozzle 31 discharges the chemical solution toward the upper surface of the substrate W, and a standby pod 111 (see Figure 2B) that houses the first chemical solution nozzle 31 and the splash shield 101. The splash shield 101 is positioned around the first chemical solution nozzle 31 and moves together with the first chemical solution nozzle 31. The standby pod 111 is positioned so as to overlap the first chemical solution nozzle 31 and the splash shield 101 in a plan view when the first chemical solution nozzle 31 is in the standby position. Details of the splash shield 101 will be described later.

[0066] The second chemical nozzle 39 is connected to a second chemical pipe 40p that guides SC1 toward the second chemical nozzle 39. When the second chemical valve 40v interposed in the second chemical pipe 40p is opened, SC1 is supplied from the second chemical pipe 40p to the second chemical nozzle 39 and continuously discharged downward from the second chemical nozzle 39. The second nozzle moving unit 41 moves the second chemical nozzle 39 horizontally between a processing position in which the processing liquid discharged from the second chemical nozzle 39 is supplied to the upper surface of the substrate W, and a standby position in which the second chemical nozzle 39 is positioned around the spin chuck 21 in a plan view.

[0067] The first rinse liquid nozzle 42 is connected to the first rinse liquid pipe 43p, which guides pure water toward the first rinse liquid nozzle 42. When the first rinse liquid valve 43v, which is interposed in the first rinse liquid pipe 43p, is opened, pure water is supplied from the first rinse liquid pipe 43p to the first rinse liquid nozzle 42 and continuously discharged downward from the first rinse liquid nozzle 42. The third nozzle moving unit 44 moves the first rinse liquid nozzle 42 horizontally between a processing position in which the processing liquid discharged from the first rinse liquid nozzle 42 is supplied to the upper surface of the substrate W, and a standby position in which the first rinse liquid nozzle 42 is positioned around the spin chuck 21 in a plan view.

[0068] The second rinse fluid nozzle 45 is connected to a second rinse fluid pipe 46p that guides pure water toward the second rinse fluid nozzle 45. When the second rinse fluid valve 46v, which is interposed in the second rinse fluid pipe 46p, is opened, pure water is supplied from the second rinse fluid pipe 46p to the second rinse fluid nozzle 45 and continuously discharged downward from the second rinse fluid nozzle 45. The second rinse fluid nozzle 45, being a fixed nozzle, is fixed to the partition wall 13 of the chamber 12. The second rinse fluid nozzle 45 discharges pure water toward the center of the upper surface of the substrate W.

[0069] As shown in Figure 2A, the plurality of nozzles further include a bottom nozzle 47 that discharges the processing liquid upward toward the center of the lower surface of the substrate W. The bottom nozzle 47 includes a disc portion positioned horizontally between the upper surface of the spin base 23 and the lower surface of the substrate W. The disc portion is annular in shape surrounding the axis of rotation A1 and has an outer diameter smaller than the diameter of the substrate W. The discharge port of the bottom nozzle 47 opens at the center of the upper surface of the disc portion. The discharge port of the bottom nozzle 47 faces the center of the lower surface of the substrate W in the vertical direction.

[0070] The processing unit 2 surrounds the spin chuck 21 within the chamber 12 and includes a cylindrical processing cup 52 that receives the processing liquid splashed outward from the substrate W. The processing cup 52 includes a plurality of guards 53 that receive the processing liquid splashed outward from the substrate W, and a plurality of cups 68 that receive the processing liquid guided downward by the plurality of guards 53. Figure 2A shows an example in which two guards 53 and two cups 68 are provided, and the outermost cup 68 is integrated with the second outermost guard 53.

[0071] The two guards 53 concentrically surround the spin chuck 21. The two cups 68 also concentrically surround the spin chuck 21. Hereafter, the outermost guard 53 will be referred to as the first guard 53A, and the remaining guard 53 as the second guard 53B. Similarly, the outermost cup 68 will be referred to as the first cup 68A, and the remaining cup 68 as the second cup 68B. The first guard 53A and the second guard 53B are sometimes collectively referred to as guard 53, and the first cup 68A and the second cup 68B are sometimes collectively referred to as cup 68.

[0072] As shown in Figure 2A, the guard 53 includes a cylindrical portion 54 that surrounds the spin chuck 21 and a cylindrical ceiling portion 60 that extends diagonally upward from the cylindrical portion 54 toward the axis of rotation A1. The ceiling portion 60 includes a cylindrical inclined portion 61 that extends diagonally upward toward the axis of rotation A1, a circular horizontal portion 62 (see Figure 9) that extends horizontally toward the axis of rotation A1 from the upper end of the inclined portion 61, and a circular folded portion 63 (see Figure 9) that protrudes downward from the inner end of the horizontal portion 62, which corresponds to the inner end of the ceiling portion 60. The cylindrical portion 54 of the first guard 53A and the cylindrical portion 54 of the second guard 53B concentrically surround the spin chuck 21. The ceiling portion 60 of the first guard 53A is positioned above the ceiling portion 60 of the second guard 53B and overlaps the ceiling portion 60 of the second guard 53B in a plan view.

[0073] The inner circumference of the ceiling portion 60 of the first guard 53A corresponds to the upper end portion 53u of the first guard 53A. The inner circumference of the ceiling portion 60 of the second guard 53B corresponds to the upper end portion of the second guard 53B. The upper end portion 53u of the first guard 53A and the upper end portion of the second guard 53B form a circular opening that surrounds the substrate W and the spin base 23 in a plan view. The inner diameter of the upper end portion 53u of the first guard 53A is smaller than the inner diameter of the upper end portion of the second guard 53B. The inner diameter of the upper end portion 53u of the first guard 53A may be equal to the inner diameter of the upper end portion of the second guard 53B. The inner diameters of the upper end portion 53u of the first guard 53A and the upper end portion of the second guard 53B are larger than the outer diameter of the spin base 23.

[0074] The cup 68 includes a cylindrical inner wall surrounding the spin chuck 21, a cylindrical outer wall surrounding the inner wall at a radial distance, and an annular bottom wall extending from the lower end of the inner wall to the lower end of the outer wall. The inner wall, outer wall, and bottom wall form an annular liquid receiving groove that opens upward. The processing liquid received by the guard 53 flows down into the liquid receiving groove. The drain port for discharging the processing liquid from the cup 68 opens on the upper surface of the bottom wall.

[0075] The first guard 53A and the second guard 53B are movable vertically relative to the partition wall 13 of the chamber 12. The first cup 68A is integrated with the second guard 53B and moves vertically together with the second guard 53B. The first cup 68A is a separate component from the second guard 53B and may be fixed to the partition wall 13. The second cup 68B is fixed to the partition wall 13. The bottom wall of the second cup 68B is raised above the floor surface of the chamber 12 (the floor surface of the partition wall 13; the same applies hereinafter). The bottom wall of the first cup 68A is also raised above the floor surface of the chamber 12.

[0076] As shown in Figure 2A, the multiple guards 53 are connected to a guard lifting unit 51 that individually raises and lowers the multiple guards 53 in the vertical direction. The guard lifting unit 51 positions the guards 53 at any position within the range from the upper position to the lower position. Figure 2A shows the state in which the first guard 53A and the second guard 53B are positioned in the lower position. The upper position is the position in which the upper end of the guard 53 is positioned above the position in which the substrate W is held by the spin chuck 21. The lower position is the position in which the upper end of the guard 53 is positioned below the position in which the substrate W is held by the spin chuck 21. The position in which the substrate W is held by the spin chuck 21 is the position in which the substrate W held by the spin chuck 21 is positioned.

[0077] When supplying processing liquid to a rotating substrate W, the control device 3 (see Figure 1A) controls the guard lifting unit 51 to position at least one guard 53 in the upper position. In this state, when processing liquid is supplied to the substrate W, the processing liquid is swept away from the substrate W. The swept-away processing liquid collides with the inner surface of the guard 53 that is horizontally opposed to the substrate W and is guided into the cup 68 corresponding to this guard 53. As a result, the processing liquid discharged from the substrate W is collected in the cup 68.

[0078] The processing cup 52 includes multiple guards 53 and multiple cups 68, as well as a cylindrical outer wall 70 that surrounds all the guards 53 and all the cups 68. The cylindrical outer wall 70 surrounds the first guard 53A, which is the outermost of all the guards 53, at radial intervals. The cylindrical outer wall 70 extends upward from the floor of the chamber 12. The upper end of the cylindrical outer wall 70 is positioned above the electric motor 25 of the spin chuck 21. The upper end of the cylindrical outer wall 70 is positioned below the substrate W.

[0079] The processing unit 2 includes a partition plate 80 that divides the space around the first guard 53A within the chamber 12 vertically. The partition plate 80 surrounds the first guard 53A. The partition plate 80 is positioned above the cylindrical outer wall 70. The partition plate 80 rests on the cylindrical outer wall 70 and is supported by the cylindrical outer wall 70. The partition plate 80 is positioned below the substrate W. The outer edge of the partition plate 80 is horizontally separated from the inner surface of the chamber 12 and faces the inner surface of the chamber 12 horizontally.

[0080] The exhaust duct 78 is inserted into a discharge hole 72 that penetrates the cylindrical outer wall 70 radially. The upstream end 78u of the exhaust duct 78 is located inside the cylindrical outer wall 70. The upstream end 78u of the exhaust duct 78 is located below the substrate W. The upstream end 78u of the exhaust duct 78 is located below the partition plate 80. The exhaust duct 78 is connected to an exhaust system provided in the factory where the substrate processing apparatus 1 is installed. The upstream end 78u of the exhaust duct 78 forms an exhaust port for drawing in gas from inside the chamber 12.

[0081] Gas in the space above the processing cup 52 within the chamber 12 is drawn into the inside of the cylindrical outer wall 70 by the suction force transmitted through the exhaust duct 78. Gas that flows into the space around the cylindrical outer wall 70 through the gap between the outer edge of the partition plate 80 and the inner surface of the chamber 12 is drawn into the inside of the cylindrical outer wall 70 through the exhaust relay hole 73 that penetrates the cylindrical outer wall 70 radially. Gas inside the cylindrical outer wall 70 is drawn into the exhaust duct 78. As a result, the gas in the chamber 12 is discharged through the exhaust duct 78.

[0082] The control device 3 (see Figure 1A) is a computer that includes a memory for storing information such as programs, and a CPU (central processing unit) that controls the substrate processing device 1 according to the program stored in the memory. The control device 3 controls the substrate processing device 1 to transport and process the substrate W as described below. In other words, the control device 3 is programmed to transport and process the substrate W as described below.

[0083] For example, the control device 3 supplies these processing liquids to the top surface of the rotating substrate W in the order of SPM, pure water, SC1, and pure water, and then dries the substrate W by high-speed rotation of the substrate W. The types and order of processing liquids supplied to the substrate W are not limited to this. For example, the control device 3 may supply these processing liquids to the top surface of the substrate W in the order of SPM, hot water (pure water at a temperature higher than room temperature), and pure water (pure water at room temperature). Alternatively, the control device 3 may supply these processing liquids to the top surface of the substrate W in the order of SPM, pure water, DHF (dilute hydrofluoric acid), pure water, SC1, and pure water, or in the order of DHF, pure water, SPM, pure water, SC1, and pure water.

[0084] In the above example, the control device 3 may replace the pure water on the substrate W with an organic solvent such as IPA, and then dry the substrate W to which the organic solvent is attached by high-speed rotation of the substrate W. In the above example, the control device 3 may supply ozonated water to the substrate W before supplying SPM, or after supplying SPM, in order to shorten the time for stripping the resist with SPM or to remove resist residue with ozonated water. In the former case, SPM is supplied to the upper surface of the substrate W covered with a liquid film of ozonated water. In the latter case, ozonated water is supplied to the upper surface of the substrate W covered with a liquid film of SPM.

[0085] Next, the first chemical nozzle 31 will be described.

[0086] Figure 3 shows the appearance of the first chemical nozzle 31 when viewed horizontally. When viewed horizontally, the first chemical nozzle 31 is in an inverted L shape. The first chemical nozzle 31 includes a nozzle section 81 with an outlet for discharging a processing liquid such as a chemical solution or pure water, and an arm section 82 that supports the nozzle section 81. The arm section 82 extends in the horizontal longitudinal direction. The length of the first chemical nozzle 31 in the longitudinal direction is greater than the length of the first chemical nozzle 31 in the vertical direction (see Figure 2B).

[0087] The arm portion 82 extends horizontally from the first nozzle moving unit 38 (see Figure 2B) to the nozzle portion 81. The nozzle portion 81 extends downward from the tip of the arm portion 82. The lower end of the nozzle portion 81 is positioned lower than the lower end of the arm portion 82. The arm portion 82 may be bent diagonally or at a right angle upward or downward. The arm portion 82 may be bent diagonally or at a right angle to the right or left.

[0088] The nozzle portion 81 includes an upstream portion 87 extending downward from the arm portion 82, and a downstream portion 88 extending downward from the upstream portion 87 and being narrower than the upstream portion 87. The downstream portion 88 is a vertical columnar shape extending downward from the lower surface of the upstream portion 87. The downstream portion 88 includes a lower surface 90 which is a plane parallel to the upper surface of the substrate W, and a cylindrical outer peripheral surface 89 which extends vertically from the lower surface 90 to the lower surface of the upstream portion 87.

[0089] Figure 3 shows an example where the upstream section 87 is a vertical rectangular prism and the downstream section 88 is a vertical cylindrical shape (see also Figure 6). In this example, the lower surface 90 of the downstream section 88 is a horizontal circular plane, and the outer circumferential surface 89 of the downstream section 88 is a vertical cylindrical surface. When the first chemical nozzle 31 is viewed from below, the outer circumferential surface 89 of the downstream section 88 and the lower surface 90 of the downstream section 88 are surrounded by the outer edge of the lower surface of the upstream section 87.

[0090] The first chemical nozzle 31 is a two-fluid nozzle that generates multiple droplets that scatter downward toward the upper surface of the substrate W by colliding a liquid and a gas. The two-fluid nozzle may be an internal mixing type in which the liquid and gas collide within the nozzle, or an external mixing type in which the liquid and gas collide outside the nozzle. Figure 3 shows an example in which the first chemical nozzle 31 is an external mixing type two-fluid nozzle.

[0091] The first chemical nozzle 31 includes at least one discharge port for discharging liquid and gas downward. The at least one discharge port may be a liquid discharge port for discharging liquid downward and a gas discharge port for discharging gas downward, or it may be a single fluid discharge port for discharging both liquid and gas. Figure 3 shows an example in which a single fluid discharge port 94 for discharging both liquid and gas opens on the lower surface 90 of the first chemical nozzle 31 and on the lower surface 90 of the downstream portion 88 of the first chemical nozzle 31, which corresponds to the lower end.

[0092] The liquid discharged from the first chemical nozzle 31 may be a single liquid prepared before use in the substrate processing apparatus 1, or it may be a mixture of two or more liquids mixed within the substrate processing apparatus 1. Figure 3 shows an example in which the first chemical nozzle 31 discharges SPM, which is a mixture of sulfuric acid and hydrogen peroxide. The sulfuric acid and hydrogen peroxide may be mixed inside the first chemical nozzle 31 or outside the first chemical nozzle 31.

[0093] The first chemical nozzle 31 includes a first liquid inlet 91 into which sulfuric acid flows, a second liquid inlet 92 into which hydrogen peroxide solution flows, and a liquid flow path 93 that guides the sulfuric acid flowing into the first liquid inlet 91 and the hydrogen peroxide solution flowing into the second liquid inlet 92 toward the fluid discharge port 94 while mixing them. The first chemical nozzle 31 further includes a gas inlet 96 into which a gas such as an inert gas flows, and a gas flow path 97 that guides the gas flowing into the gas inlet 96 toward the fluid discharge port 94.

[0094] The first liquid inlet 91, the second liquid inlet 92, the gas inlet 96, and the fluid discharge port 94 open on the outer surface of the first chemical nozzle 31. In the example shown in Figure 3, the first liquid inlet 91, the second liquid inlet 92, and the gas inlet 96 open on the outer surface of the upstream section 87, and the fluid discharge port 94 opens on the outer surface of the downstream section 88. The internal space of the downstream section 88 extends downward from the internal space of the upstream section 87. The internal spaces of the upstream section 87 and the downstream section 88 correspond to the liquid flow path 93 of the first chemical nozzle 31. The cross-sectional area of ​​the internal space of the downstream section 88 along the horizontal plane is smaller than the cross-sectional area of ​​the internal space of the upstream section 87 along the horizontal plane.

[0095] The arm section 82 is cylindrical and extends to the nozzle section 81. The sulfuric acid pipe 34p and the hydrogen peroxide pipe 35p are inserted into the arm section 82. Parts of the sulfuric acid pipe 34p and parts of the hydrogen peroxide pipe 35p are located within the arm section 82. The sulfuric acid pipe 34p and the hydrogen peroxide pipe 35p are connected to the nozzle section 81. The sulfuric acid pipe 34p does not necessarily have to be inserted into the arm section 82. The same applies to the hydrogen peroxide pipe 35p.

[0096] The liquid channel 93 extends vertically along the vertical centerline of the nozzle section 81. The gas channel 97 is cylindrical and surrounds the entire circumference of the liquid channel 93. The gas channel 97 extends vertically around the liquid channel 93. The lower end of the gas channel 97 is located on the lower surface 90 of the first chemical nozzle 31, forming a circular fluid discharge port 94 (see Figure 6). The lower end of the liquid channel 93 may be located on the lower surface 90 of the first chemical nozzle 31, or it may be located above the lower surface 90 of the first chemical nozzle 31.

[0097] The gas flow path 97 is connected via a gas inlet 96 to a gas pipe 95p that guides the gas to be supplied to the first chemical nozzle 31. When the gas valve 95v interposed in the gas pipe 95p is opened, an inert gas such as nitrogen gas is supplied from the gas pipe 95p to the gas flow path 97 via the gas inlet 96. The inert gas supplied to the gas flow path 97 spreads circumferentially within the gas flow path 97 and flows downward within the gas flow path 97. As a result, the inert gas supplied to the gas flow path 97 is discharged downward from the fluid discharge port 94.

[0098] When the sulfuric acid valve 34v and the hydrogen peroxide valve 35v are opened, SPM is generated in the liquid channel 93 and discharged downward from the fluid outlet 94. When the gas valve 95v is opened while the sulfuric acid valve 34v and the hydrogen peroxide valve 35v are open, the inert gas discharged from the fluid outlet 94 collides with the SPM discharged from the fluid outlet 94. This generates multiple droplets of SPM that scatter downward toward the upper surface of the substrate W. The flow rate of the liquid supplied to the liquid channel 93 is 50 to 200 mL / min, and the flow rate of the gas supplied to the gas channel 97 is 30 to 100 L / min. These values ​​are examples, and the flow rates of the liquid and gas are not limited to these.

[0099] Next, I will explain the splash shield 101.

[0100] The following explanation refers to Figures 3 to 7. Figure 3 is a schematic cross-sectional view showing the vertical cross-section of the droplet shield 101. Figure 4 is a schematic horizontal view of the first chemical nozzle 31 and the droplet shield 101. Figure 5 is a schematic top view of the first chemical nozzle 31 and the droplet shield 101. Figure 6 is a schematic bottom view of the first chemical nozzle 31 and the droplet shield 101. Figure 7 is a schematic diagram illustrating the connecting space S2 that connects the upper space S1 to the inner space S3.

[0101] As shown in Figures 3 and 4, the substrate processing apparatus 1 is equipped with a splash shield 101 that catches splashes that scatter upward from the substrate W. The splash shield 101 is attached to the first chemical nozzle 31. The splash shield 101 is held by the first chemical nozzle 31. The first nozzle moving unit 38 moves the first chemical nozzle 31 and the splash shield 101 horizontally while maintaining a constant position of the splash shield 101 relative to the first chemical nozzle 31.

[0102] As shown in Figure 4, the splash shield 101 includes a support arm 102 extending downward from the nozzle portion 81 and a shield plate 103 supported by the support arm 102. The support arm 102 is fixed to the first chemical nozzle 31. The shield plate 103 is fixed to the first chemical nozzle 31 via the support arm 102. The support arm 102 may be a separate component from the shield plate 103, or it may be integrated with the shield plate 103. Figure 4 shows an example of the former. In this example, two support arms 102 are fixed to one shield plate 103.

[0103] The support arm 102 extends upward from the shield plate 103. The shield plate 103 is positioned below the support arm 102. The nozzle portion 81 is positioned between the two support arms 102. As shown in Figure 5, the arm portion 82 is positioned so as not to overlap the two support arms 102 when the first chemical nozzle 31 is viewed from above. If we define the position where the arm portion 82 is positioned as the position where the angle around the center of the shield plate 103 is 0 degrees, then Figure 5 shows an example where the two support arms 102 are positioned at 90 degrees and 270 degrees.

[0104] As shown in Figure 4, the support arm 102 includes a base plate 102b fixed to the first chemical nozzle 31, a lower plate 102L fixed to the first chemical nozzle 31 via the base plate 102b, and a pair of side plates 102s extending from the lower plate 102L to the base plate 102b. The base plate 102b is fixed to the first chemical nozzle 31 in contact with the nozzle portion 81. The lower plate 102L is fixed to the shield plate 103 in contact with the upper surface 103u of the shield plate 103. The shield plate 103 is fixed to the first chemical nozzle 31 via the lower plate 102L and the base plate 102b.

[0105] Figure 4 shows an example where the base plate 102b and lower plate 102L are rectangular flat plates, and the side plate 102s is a triangular flat plate. The upper end of the base plate 102b is positioned at the same height as the upper end of the nozzle portion 81. The lower surface of the lower plate 102L is in contact with the upper surface 103u of the shield plate 103. One side of the side plate 102s is in contact with the upper surface of the base plate 102b, and the other side of the side plate 102s is in contact with the front surface of the lower plate 102L. The pair of side plates 102s are positioned parallel to each other with a horizontal gap between them.

[0106] The shield plate 103 is a continuous ring-shaped plate extending around its entire circumference. As shown in Figure 6, the shield plate 103 includes an inner circumference 103i that surrounds the entire circumference of the lower surface 90 of the first chemical nozzle 31 when viewed from below, and an outer circumference 103o that surrounds the entire circumference of the inner circumference 103i when viewed from below. The shield plate 103 further includes an upper surface 103u extending from the inner circumference 103i to the outer circumference 103o, and a lower surface 103L extending from the inner circumference 103i to the outer circumference 103o below the upper surface 103u.

[0107] The inner circumference 103i of the shield plate 103 is a cylindrical surface or closed line connecting the innermost parts of each vertical cross-section of the shield plate 103 with angles from 0 to 360 degrees around the center of the shield plate 103. The outer circumference 103o of the shield plate 103 is a cylindrical surface or closed line connecting the outermost parts of each vertical cross-section of the shield plate 103 with angles from 0 to 360 degrees around the center of the shield plate 103. Figure 3 shows an example where the inner circumference 103i and outer circumference 103o of the shield plate 103 are vertical cylindrical surfaces with a constant diameter from the top to the bottom. As shown in Figure 6, when the first chemical nozzle 31 is viewed from below, the inner circumference 103i of the shield plate 103 surrounds the entire circumference of the downstream part 88 of the nozzle part 81.

[0108] In the example shown in Figure 6, the inner circumference 103i of the shield plate 103 is a circle concentric with the lower surface 90 of the first chemical nozzle 31, and the inner circumference 103i of the shield plate 103 also surrounds the entire circumference of the upstream portion 87 of the nozzle portion 81. The inner circumference 103i of the shield plate 103 may have a shape other than a circle, or it may be eccentric with respect to the lower surface 90 of the first chemical nozzle 31. As long as the inner circumference 103i of the shield plate 103 surrounds the entire circumference of the lower surface 90 of the first chemical nozzle 31 when viewed from below, at least a portion of the outer circumferential surface of the upstream portion 87 of the nozzle portion 81 may be located outside the inner circumference 103i of the shield plate 103 when viewed from below.

[0109] As shown in Figure 5, when the first chemical nozzle 31 is viewed from above, the two support arms 102 overlap the inner circumference 103i of the shield plate 103. The arm portion 82 also overlaps the inner circumference 103i of the shield plate 103. Therefore, when the first chemical nozzle 31 is viewed from above, a portion of the inner circumference 103i of the shield plate 103 is covered and not visible by the two support arms 102 and the arm portion 82. On the other hand, when the first chemical nozzle 31 is viewed from above, the remaining portion of the inner circumference 103i of the shield plate 103 is not overlapped by other components such as the support arms 102 and is visible.

[0110] In the examples shown in Figures 3 and 4, the upper surface 103u and lower surface 103L of the shield plate 103 are annular planes extending horizontally from the inner circumference 103i to the outer circumference 103o of the shield plate 103. The inner and outer edges of the upper surface 103u of the shield plate 103 are concentric circles. The inner and outer edges of the lower surface 103L of the shield plate 103 are also concentric circles. The thickness of the shield plate 103, that is, the vertical length from the lower surface 103L to the upper surface 103u of the shield plate 103, is constant from the inner circumference 103i to the outer circumference 103o of the shield plate 103.

[0111] The upper surface 103u of the shield plate 103 may have a portion that is perpendicular or inclined to the upper surface of the substrate W. The same applies to the lower surface 103L of the shield plate 103. The upper surface 103u and the lower surface 103L of the shield plate 103 do not have to be parallel to each other. The thickness of the shield plate 103 does not have to be constant from the inner circumference 103i to the outer circumference 103o of the shield plate 103. The inner circumference 103i and the outer circumference 103o of the shield plate 103 do not have to be coaxial. The inner circumference 103i of the shield plate 103 may have a portion whose diameter changes continuously or in steps. The inner circumference 103i of the shield plate 103 may have a horizontal cross-section other than a circle, such as an ellipse or a polygon. These also apply to the outer circumference 103o of the shield plate 103.

[0112] The lower surface 103L of the shield plate 103 is the lowest surface of the splash shield 101. The lower surface 103L of the shield plate 103 corresponds to the lower surface of the splash shield 101. The lower surface 103L of the shield plate 103 is the surface visible when the splash shield 101 is viewed from below. When the splash shield 101 is placed above the substrate W, the lower surface 103L of the shield plate 103 directly faces the upper surface of the substrate W. The lower surface 103L of the shield plate 103 is the shield surface that directly faces the upper surface of the substrate W. Splashes scattered upward from the substrate W are caught by the shield surface and fall from the shield surface.

[0113] The upper surface 103u and lower surface 103L of the shield plate 103 are positioned below the upper end of the first chemical nozzle 31. Figures 3 and 4 show an example in which the upper surface 103u and lower surface 103L of the shield plate 103 are positioned above the lower surface 90 of the first chemical nozzle 31 and below the gas inlet 96 into which the gas discharged from the first chemical nozzle 31 flows. The upper surface 103u of the shield plate 103 may be positioned at the same height as the lower surface 90 of the first chemical nozzle 31, or it may be positioned below the lower surface 90 of the first chemical nozzle 31. The same applies to the lower surface 103L of the shield plate 103.

[0114] As shown in Figure 7, the radial distance of the shield plate 103 (horizontal direction perpendicular to the vertical center line of the shield plate 103) from the outer peripheral surface 89 of the first chemical nozzle 31 to the inner peripheral surface 103i of the shield plate 103 is the distance D1 between the first chemical nozzle 31 and the shield plate 103. The radial distance of the shield plate 103 from the inner peripheral surface 103i to the outer peripheral surface 103o of the shield plate 103 is the width D2 of the shield plate 103. The vertical distance from the top surface of the substrate W to the bottom surface 90 of the first chemical nozzle 31 is the distance D3 between the first chemical nozzle 31 and the substrate W. The vertical distance from the top surface of the substrate W to the bottom surface 103L of the shield plate 103 is the distance D4 between the shield plate 103 and the substrate W.

[0115] The distance D1 between the first chemical nozzle 31 and the shield plate 103 may be equal to the width D2 of the shield plate 103, or it may be greater than or less than the width D2 of the shield plate 103. The distance D1 may be equal to the outer diameter D5 of the first chemical nozzle 31, or it may be greater than or less than the outer diameter D5 of the first chemical nozzle 31. The distance D1 may be equal to the distance D3 between the first chemical nozzle 31 and the substrate W, or it may be greater than or less than the said distance D3. The distance D1 may be equal to the distance D4 between the shield plate 103 and the substrate W, or it may be greater than or less than the said distance D4.

[0116] The spacing D4 between the shield plate 103 and the substrate W may be equal to the width D2 of the shield plate 103, or it may be greater than or less than the width D2 of the shield plate 103. The spacing D4 may be equal to the outer diameter D5 of the first chemical nozzle 31, or it may be greater than or less than the outer diameter D5 of the first chemical nozzle 31. The spacing D4 may be equal to the spacing D3 between the first chemical nozzle 31 and the substrate W, or it may be greater than or less than the spacing D3. The spacing D4 may be equal to the inner diameter of the shield plate 103 (the diameter of the inner circumference 103i of the shield plate 103), or it may be greater than or less than the inner diameter of the shield plate 103.

[0117] The inner diameter of the shield plate 103 is 50 mm, and the outer diameter of the shield plate 103 is 100 mm. The outer diameter of the substrate W is 300 mm. Therefore, the outer diameter of the shield plate 103 is smaller than the outer diameter of the substrate W. The width D2 of the shield plate 103 is 25 mm. The outer diameter D5 of the first chemical nozzle 31 is 10 mm. The distance D1 between the first chemical nozzle 31 and the shield plate 103 is 20 mm. The distance D3 between the first chemical nozzle 31 and the substrate W is 10 mm. The distance D4 between the shield plate 103 and the substrate W is 5 to 15 mm. These values ​​are examples, and the inner diameter of the shield plate 103, etc., are not limited to these.

[0118] As shown in Figure 7, the space above the upper surface 103u of the shield plate 103 and outside the inner circumference 103i of the shield plate 103 is the upper space S1. The space inside the inner circumference 103i of the shield plate 103 is the inner space S3. The space between the lower surface 103L of the shield plate 103 and the upper surface of the substrate W is the lower space S4. The upper space S1 is a vertical cylindrical shape concentric with the inner circumference 103i of the shield plate 103. The inner space S3 is a horizontal disc shape.

[0119] The first chemical nozzle 31 and the shield plate 103 form a connecting space S2 that connects the upper space S1 to the inner space S3. In Figure 7, the area enclosed by the thick dashed line represents a part of the connecting space S2. The connecting space S2 is a space that is connected vertically to the inner space S3 and horizontally to the upper space S1. The connecting space S2 may connect the upper space S1 to the inner space S3 only in a part of the angle range from 0 to 360 degrees around the center of the shield plate 103, or it may connect the upper space S1 to the inner space S3 at any position within that range.

[0120] Next, the operation of the first chemical nozzle 31 and the splash shield 101 on the substrate W will be described.

[0121] Figure 8 is a schematic diagram illustrating the airflow formed by the discharge of liquid and gas from the first chemical nozzle 31. Figure 9 is a schematic diagram illustrating how the airflow passing between the shield plate 103 and the substrate W reaches the guard 53. Figure 10 is a schematic diagram showing the positions of the first chemical nozzle 31 and the splash shield 101 relative to the substrate W in a plan view.

[0122] The first chemical nozzle 31 collides SPM, an example of a liquid, with nitrogen gas, an example of a gas, to generate multiple droplets of SPM that scatter downward toward the upper surface of the substrate W. When the first chemical nozzle 31 discharges SPM, or when the SPM collides with the upper surface of the substrate W or with the liquid on the substrate W, an SPM mist is generated. This SPM mist is received by a splash shield 101 attached to the first chemical nozzle 31. This prevents the mist from spreading. The splash shield 101 is made of a fluororesin that has resistance to chemicals such as PTFE (polytetrafluoroethylene) and PFE (pafluoroelastomer).

[0123] As shown in Figure 9, when supplying SPM to the upper surface of the substrate W, the control device 3 (see Figure 1A) rotates the substrate W on the spin chuck 21 with at least one guard 53 in the upper position, and discharges SPM from the first chemical nozzle 31 toward the upper surface of the substrate W. At this time, the control device 3 may keep the first chemical nozzle 31 and the splash shield 101 stationary so that the collision position where the SPM discharged from the first chemical nozzle 31 collides with the upper surface of the substrate W remains in the center of the upper surface of the substrate W, or it may move the first chemical nozzle 31 and the splash shield 101 horizontally so that the collision position moves within the upper surface of the substrate W in the radial direction of the substrate W (in a direction perpendicular to the rotation axis A1 of the substrate W).

[0124] When discharging SPM from the first chemical nozzle 31 and moving the first chemical nozzle 31 and the splash shield 101 horizontally, the control device 3 may move the first chemical nozzle 31 and the splash shield 101 horizontally between a center processing position where the SPM discharged from the first chemical nozzle 31 collides with the center of the upper surface of the substrate W and an edge processing position where the SPM discharged from the first chemical nozzle 31 collides with the outer periphery of the upper surface of the substrate W (half scan). Alternatively, the control device 3 may move the first chemical nozzle 31 and the splash shield 101 horizontally between two edge processing positions where the SPM discharged from the first chemical nozzle 31 collides with the outer periphery of the upper surface of the substrate W (full scan). Figure 10 shows an example of the two edge processing positions.

[0125] As shown in Figures 9 and 10, when the first chemical nozzle 31 is positioned at the edge, the shield plate 103 of the splash shield 101 is positioned below the ceiling portion 60 of the first guard 53A, which is positioned above, and may overlap the ceiling portion 60 in a plan view. In this case, the support arm 102 and the shield plate 103 are separated from the first guard 53A, which is positioned above, and do not come into contact with the first guard 53A. The upper end portion 53u of the first guard 53A, which is positioned above, is positioned above any portion of the shield plate 103 and overlaps the splash shield 101, which is positioned at the edge, in a plan view.

[0126] As shown in Figure 8, the first chemical nozzle 31 ejects SPM together with nitrogen gas downward from the fluid outlet 94. This generates multiple droplets of SPM that collide with the upper surface of the substrate W or the liquid on the substrate W. The nitrogen gas discharged from the first chemical nozzle 31 flows downward from the lower surface 90 of the first chemical nozzle 31 toward the upper surface of the substrate W. Subsequently, this nitrogen gas spreads vertically between the lower surface 103L of the shield plate 103 and the upper surface of the substrate W, and flows radially away from the first chemical nozzle 31 in a direction horizontally away.

[0127] The airflow formed by the first chemical nozzle 31 attracts gas near the first chemical nozzle 31 or the shield plate 103 towards the airflow due to the viscosity of the gas. Since the shield plate 103 is positioned near this airflow, the gas attracted towards the airflow bypasses the shield plate 103. This can generate an attractive force that draws the gas downward towards the inner space S3. This attractive force draws the mist floating in the upper space S1 towards the inside of the shield plate 103. This narrows the area over which the mist floating in the upper space S1 diffuses.

[0128] Furthermore, the lower surface 103L of the shield plate 103 restricts the spread of airflow in the vertical direction and reduces the decrease in the horizontal velocity component of the airflow. This allows the momentum of the airflow flowing along the upper surface of the substrate W to be maintained up to the guard 53, and the processing liquid atmosphere can be carried to the guard 53 by this airflow. Subsequently, the processing liquid atmosphere can be carried towards the exhaust duct 78 (see Figure 2A) by the airflow flowing from inside the guard 53, and the processing liquid atmosphere can be discharged from the chamber 12.

[0129] As described above, in the first embodiment, by colliding liquid and gas inside or outside the first chemical nozzle 31, multiple droplets are generated that scatter downward toward the upper surface of the horizontal substrate W. As a result, multiple SPM droplets collide with the upper surface of the substrate W or the liquid on the substrate W. At this time, droplets are generated that scatter upward from the substrate W. Such droplets collide with the lower surface 103L of the shield plate 103 facing the upper surface of the substrate W and fall. This makes it possible to narrow the range over which the processing liquid atmosphere containing the processing liquid particles diffuses.

[0130] Furthermore, the first chemical nozzle 31 discharges not only liquid but also gas. The gas discharged from the first chemical nozzle 31 flows downward from the lower surface 90 of the first chemical nozzle 31 toward the upper surface of the substrate W. Subsequently, this gas spreads vertically between the lower surface 103L of the shield plate 103 and the upper surface of the substrate W, and flows radially away from the first chemical nozzle 31 horizontally. The lower surface 103L of the shield plate 103 restricts the vertical spread of the airflow and reduces the decrease in the horizontal velocity component of the airflow. As a result, even after the airflow passes between the shield plate 103 and the substrate W, the horizontal velocity component of the airflow can be maintained at a large level, allowing the airflow to reach the components surrounding the substrate W, such as the guard 53.

[0131] In addition, the first chemical nozzle 31 and the shield plate 103 form a connection space S2 that connects the upper space S1, which is the space above the upper surface 103u of the shield plate 103 and outside the inner circumference of the shield plate 103, to the inner space S3, which is the space inside the inner circumference of the shield plate 103. The connection space S2 is located above the inner space S3 and inside the upper space S1. The connection space S2 is a space that is connected vertically to the inner space S3 and horizontally to the upper space S1. The lower space S4, which is the space between the lower surface 103L of the shield plate 103 and the upper surface of the substrate W, is connected to the upper space S1 via the inner space S3 and the connection space S2.

[0132] The gas flowing downward from the lower surface 90 of the first chemical nozzle 31 can pass inside the inner circumference of the shield plate 103. Furthermore, this gas flows radially away from the first chemical nozzle 31 between the lower surface 103L of the shield plate 103 and the upper surface of the substrate W. Due to the viscosity of the gas, the gas near the first chemical nozzle 31 or the shield plate 103 is attracted towards the airflow flowing downward from the first chemical nozzle 31 and the airflow flowing radially along the upper surface of the substrate W, and flows together with these airflows.

[0133] The shield plate 103 acts as a barrier to gases that are drawn towards the airflow formed by the first chemical nozzle 31, causing the gases to be diverted. This can generate an attractive force that draws the gas downwards into the inner space S3. When such an attractive force is generated, the mist floating in the upper space S1 is drawn into the inside of the shield plate 103 through the connecting space S2 that connects the upper space S1 and the inner space S3, and flows together with the airflow formed by the first chemical nozzle 31. This narrows the area over which the mist floating in the upper space S1 diffuses.

[0134] Furthermore, since the suction force is generated by utilizing the airflow formed by the liquid and gas discharged from the first chemical nozzle 31, energy does not need to be consumed solely for generating the suction force. Therefore, while efficiently utilizing energy, the range over which the processing liquid atmosphere, such as mist, circulates in the upper space S1 can be narrowed. This reduces the environmental burden while mitigating or preventing contamination of the substrate W or nearby components.

[0135] In the first embodiment, when the first chemical nozzle 31 is viewed from above, at least a portion of the inner circumference 103i of the shield plate 103 is visible and does not overlap with other components. Therefore, the upper space S1, that is, the space above the upper surface 103u of the shield plate 103 and outside the inner circumference 103i of the shield plate 103, is connected to the inner space S3, which is the space inside the inner circumference 103i of the shield plate 103. As a result, mist floating in the upper space S1 flows to the inner space S3 without being obstructed by other components. This allows the mist floating in the upper space S1 to be efficiently drawn into the inside of the shield plate 103.

[0136] In the first embodiment, the lower surface 90 of the first chemical nozzle 31 is positioned at a height equal to at least a portion of the lower surface 103L of the shield plate 103, or at a height lower than at least a portion of the lower surface 103L of the shield plate 103. The fluid discharge port 94 for discharging liquid and gas downward is open at the lower surface 90 of the first chemical nozzle 31. Even if droplets are generated that scatter diagonally upward from the lower surface 90 of the first chemical nozzle 31, these droplets can be made to fall by colliding with the lower surface 103L of the shield plate 103. This makes it possible to narrow the area over which the treatment liquid atmosphere diffuses.

[0137] In the first embodiment, since the outer diameter of the shield plate 103 is smaller than the outer diameter of the substrate W, when the shield plate 103 is placed above the substrate W, the outer circumference 103o of the shield plate 103 is surrounded by the outer circumference of the substrate W in a plan view. When the outer diameter of the shield plate 103 is smaller than the outer diameter of the substrate W, the volume of the shield plate 103 can be reduced compared to when the outer diameter of the shield plate 103 is equal to or greater than the outer diameter of the substrate W. This makes it possible to miniaturize the chamber 12 that houses the substrate W or to increase the number of components housed in the chamber 12.

[0138] In the first embodiment, the first chemical nozzle 31 is moved horizontally by the first nozzle moving unit 38, which is an example of a nozzle actuator, thereby shifting the collision position within the upper surface of the substrate W where multiple droplets generated by the first chemical nozzle 31 collide with the upper surface of the substrate W. This improves the uniformity of the processing of the substrate W. Furthermore, since the first nozzle moving unit 38 also moves the shield plate 103 horizontally, the area over which the processing liquid atmosphere diffuses can be narrowed regardless of the position of the first chemical nozzle 31.

[0139] Next, a second embodiment will be described.

[0140] In Figures 11 to 12 below, configurations equivalent to those shown in Figures 1A to 10 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0141] The main difference between the second embodiment and the first embodiment is the provision of a lifting actuator 124 that moves the shield plate 103 up and down relative to the first chemical nozzle 31.

[0142] Figure 11 is a schematic diagram of the first chemical nozzle 31 and splash shield 101 according to the second embodiment of the present invention, viewed horizontally. Figure 12 is a schematic diagram of the first chemical nozzle 31 and splash shield 101 according to the second embodiment of the present invention, viewed from above. The substrate processing apparatus 1 includes a guide 121 that connects the shield plate 103 to the first chemical nozzle 31 so that the shield plate 103 can move vertically in parallel with respect to the first chemical nozzle 31, a lifting actuator 124 that moves the shield plate 103 up and down with respect to the first chemical nozzle 31, and a link mechanism 122 that transmits the power of the lifting actuator 124 to the shield plate 103.

[0143] Guide 121 connects the nozzle portion 81 of the first chemical nozzle 31 to the support arm 102 of the splash shield 101. The lifting actuator 124 and link mechanism 122 are attached to the arm portion 82 of the first chemical nozzle 31. When the lifting actuator 124 applies power to the link mechanism 122, the power from the lifting actuator 124 is transmitted to the shield plate 103 via the link mechanism 122 and the support arm 102. This causes the shield plate 103 to move up and down relative to the first chemical nozzle 31.

[0144] Figures 11 and 12 show an example in which the link mechanism 122 includes a seesaw arm 123 that rotates up and down with a horizontal line as the pivot point. The structure of the link mechanism 122 is not limited to the structure shown in Figures 11 and 12. The power of the lifting actuator 124 may be applied directly to the support arm 102 or the shield plate 103. When the lifting actuator 124 rotates the point of force application of the seesaw arm 123 upward, the point of application of the seesaw arm 123 rotates downward, pushing the support arm 102 downward. This causes the shield plate 103 to move downward relative to the first chemical nozzle 31.

[0145] The shield plate 103 is movable up and down relative to the first chemical nozzle 31 between an initial position and a lower limit position. In Figure 11, the position of the shield plate 103 shown by the dashed line is the initial position, and the position of the shield plate 103 shown by the solid line is the lower limit position. After the shield plate 103 moves downward relative to the first chemical nozzle 31, when the point of application of the seesaw arm 123 rotates upward, the shield plate 103 moves upward relative to the first chemical nozzle 31 due to the reaction force of a spring (not shown). This returns the shield plate 103 to its initial position.

[0146] When discharging SPM from the first chemical nozzle 31, the control device 3 (see Figure 1A) may move the first chemical nozzle 31 and the splash shield 101 horizontally while maintaining a constant position of the shield plate 103 relative to the first chemical nozzle 31, or it may change the position of the shield plate 103 relative to the first chemical nozzle 31 according to the position of the first chemical nozzle 31 relative to the substrate W. For example, the control device 3 may move the shield plate 103 using the lifting actuator 124 such that the vertical distance from the upper surface of the substrate W to the lower surface 103L of the shield plate 103 increases continuously or in steps as the shortest horizontal distance from the center of the substrate W to the first chemical nozzle 31 increases.

[0147] In the second embodiment, in addition to the effects of the first embodiment, the following effects can be achieved. Specifically, in the second embodiment, the vertical distance from the upper surface of the substrate W to the lower surface 103L of the shield plate 103 is increased or decreased by moving the shield plate 103 up and down relative to the first chemical nozzle 31. Increasing this distance reduces the resistance applied to the airflow between the shield plate 103 and the substrate W, and the decrease in the horizontal velocity component of the airflow becomes smaller. Decreasing this distance increases the suction force that draws gas downward toward the inner space S3. Therefore, by changing the vertical position of the shield plate 103 relative to the first chemical nozzle 31, the velocity of the airflow and the magnitude of the suction force can be adjusted.

[0148] Next, a third embodiment will be described.

[0149] In Figures 13 to 14 below, configurations equivalent to those shown in Figures 1A to 12 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0150] The main difference between the third embodiment and the first embodiment is the inclusion of a mist generator 105 that generates a mist of the cleaning solution.

[0151] Figure 13 is a schematic cross-sectional view showing a vertical cross-section of a mist generator 105 according to a third embodiment of the present invention. Figure 14 is a schematic view of the mist generator 105 from above. As shown in Figure 13, the substrate processing apparatus 1 includes a mist generator 105 that generates mist of cleaning solution. Figure 13 shows an example in which the mist generator 105 includes an ultrasonic transducer 106. The ultrasonic transducer 106 is attached to the nozzle portion 81. The ultrasonic transducer 106 may also be attached to the arm portion 82 or the splash shield 101. The ultrasonic transducer 106 may be attached to two or more of the nozzle portion 81, the arm portion 82, and the splash shield 101.

[0152] The mist generator 105 includes a liquid tank 107 for storing the cleaning solution, which is the source of the mist. Figure 13 shows an example in which the liquid tank 107 is a recessed area that extends downward from the upper surface of the upstream portion 87 of the first chemical nozzle 31. The liquid tank 107 opens at the upper surface of the upstream portion 87 of the first chemical nozzle 31. The liquid tank 107 includes a cylindrical inner surface that surrounds the cleaning solution inside the liquid tank 107 and a bottom surface that closes the bottom of the inner surface of the liquid tank 107. The liquid tank 107 may be integrated with the nozzle portion 81, or it may be a separate component fixed to the nozzle portion 81.

[0153] Figure 13 shows an example in which the ultrasonic transducer 106 is placed inside the liquid tank 107. The ultrasonic transducer 106 may be placed outside the liquid tank 107 if mist can be generated from the cleaning liquid inside the liquid tank 107. The ultrasonic transducer 106 is placed on the bottom surface of the liquid tank 107. In the example shown in Figure 14, the ultrasonic transducer 106 is a horizontal disc, and the inner surface of the liquid tank 107 concentrically surrounds the outer surface of the ultrasonic transducer 106. The upper end of the ultrasonic transducer 106 may be placed at the same height as the upper surface of the upstream portion 87 of the first chemical nozzle 31, or it may be placed above or below the upper surface of the upstream portion 87 of the first chemical nozzle 31.

[0154] The ultrasonic transducer 106 may be a piezoelectric element that vibrates in response to a change in voltage, a magnetostrictive vibrator that vibrates in response to a change in a magnetic field, or any other type of transducer. The oscillator that vibrates the ultrasonic transducer 106 is electrically connected to the ultrasonic transducer 106 via wiring. Part or all of the ultrasonic transducer 106 is immersed in the cleaning solution in the liquid tank 107. When the ultrasonic transducer 106 starts to vibrate, part of the cleaning solution in the liquid tank 107 turns into a mist, and the mist of the cleaning solution flows upward from the liquid surface in the liquid tank 107.

[0155] As shown in Figure 14, the mist generator 105 includes, in addition to the ultrasonic transducer 106 and the liquid tank 107, a cleaning fluid pipe 108p that guides the cleaning fluid to be supplied to the liquid tank 107, and a cleaning fluid valve 108v that switches between an open state in which cleaning fluid is supplied from the cleaning fluid pipe 108p to the liquid tank 107 and a closed state in which the supply of cleaning fluid from the cleaning fluid pipe 108p to the liquid tank 107 is stopped. The cleaning fluid pipe 108p is attached to the first chemical nozzle 31. The cleaning fluid pipe 108p moves together with the first chemical nozzle 31. When the cleaning fluid valve 108v is opened, the cleaning fluid in the cleaning fluid pipe 108p is supplied to the liquid tank 107.

[0156] The cleaning solution in the liquid tank 107 is pure water. The mist generator 105 generates a mist of pure water, that is, an aggregate of pure water particles. The cleaning solution may be a liquid other than pure water. For example, the cleaning solution may be a liquid containing at least one of the following: carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, hydrochloric acid water at a dilution concentration (e.g., about 10 to 100 ppm), and ammonia water at a dilution concentration (e.g., about 10 to 100 ppm), or it may be any other liquid. When the chemical solution discharged from the first chemical solution nozzle 31 is acidic, the cleaning solution is preferably neutral or acidic, and when the chemical solution discharged from the first chemical solution nozzle 31 is alkaline, the cleaning solution is preferably neutral or alkaline.

[0157] The mist generator 105 may be a generator other than an ultrasonic type. The mist generator 105 may be equipped with a heater in place of or in addition to the ultrasonic transducer 106 to evaporate the cleaning liquid in the liquid tank 107 by heating the cleaning liquid in the liquid tank 107. The mist generator 105 may be equipped with a mist nozzle for spraying mist in place of or in addition to the ultrasonic transducer 106. The mist nozzle may be an external or internal two-fluid nozzle that generates mist by colliding liquid and gas, or a spray nozzle that generates mist by spraying compressed liquid from an orifice or by utilizing the Venturi effect. However, the ultrasonic transducer 106 is superior to a heater in that it can generate mist in a shorter time and is superior to a mist nozzle in that it can generate finer mist with a relatively simple configuration.

[0158] Next, we will explain the operation of the mist generator 105.

[0159] The control device 3 (see Figure 1A) starts generating mist in the mist generator 105, and then starts discharging SPM from the first chemical nozzle 31. The mist of pure water, which is an example of a cleaning solution, flows upward from the mist generator 105, and then flows towards the guard 53 (see Figure 2A) due to the downflow and the suction force of the exhaust equipment. The chemical atmosphere floating near the first chemical nozzle 31 comes into contact with the pure water mist floating near the first chemical nozzle 31. As shown in Figure 13, this contact causes the chemical particles to combine with the pure water particles, forming larger and heavier liquid particles. As the weight of the particles increases, the chemical atmosphere becomes less likely to flow upward, and the range over which the chemical atmosphere diffuses narrows.

[0160] After the discharge of SPM from the first chemical nozzle 31 is stopped, the substrate W is rotating and the liquid film of SPM covers the entire upper surface of the substrate W, at which point pure water is discharged from the first rinse nozzle 42 (see Figure 2A) or the second rinse nozzle 45 (see Figure 2A). The control device 3 may stop the generation of mist in the mist generator 105 at the same time that the first chemical nozzle 31 stops discharging SPM, or it may stop the generation of mist in the mist generator 105 before or after the first chemical nozzle 31 stops discharging SPM.

[0161] The pure water discharged from the first rinse liquid nozzle 42 or the second rinse liquid nozzle 45 collides with the upper surface of the rotating substrate W and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water mist generated from the mist generator 105 remains above the substrate W for a certain period of time even after the mist generator 105 stops generating mist. As a result, the droplets of SPM generated when rinsing the SPM on the substrate W with pure water are captured by the pure water mist floating above the substrate W and then discharged outside the chamber 12 through the inside of the guard 53. This eliminates or reduces the chemical atmosphere that adheres to the substrate W or components placed near the substrate W after drying.

[0162] In the third embodiment, in addition to the effects of the first embodiment, the following effects can be achieved. Specifically, in the third embodiment, a mist of cleaning solution is generated in a mist generator 105 held in the first chemical nozzle 31. The treatment liquid atmosphere floating near the first chemical nozzle 31 comes into contact with the mist of cleaning solution generated from the mist generator 105. This contact causes the particles of the treatment liquid to combine with the particles of the cleaning liquid, changing them into larger and heavier liquid particles. As the weight of the particles increases, the treatment liquid atmosphere becomes less likely to flow upward, and the range over which the treatment liquid atmosphere diffuses is narrowed. In particular, since the mist of cleaning solution comes into contact with the treatment liquid atmosphere near the first chemical nozzle 31, which is the main source of the treatment liquid atmosphere, the diffusion range of the treatment liquid atmosphere can be effectively narrowed. As a result, the treatment liquid atmosphere adhering to the substrate W after drying or to components placed near the substrate W can be eliminated or reduced, and contamination of the substrate W etc. caused by the treatment liquid atmosphere can be reduced.

[0163] In the third embodiment, instead of evaporating the cleaning solution in the liquid tank 107 with a heater or spraying the cleaning solution with a mist nozzle, the cleaning solution mist is generated by vibrating the cleaning solution in the liquid tank 107, which is provided in at least one of the first chemical nozzle 31 and the shield plate 103, with an ultrasonic transducer 106. The ultrasonic transducer 106 is superior to a heater in that it can generate mist in a shorter time, and superior to a mist nozzle in that it can generate a finer mist with a relatively simple configuration. By making the cleaning solution particles smaller, the time that the cleaning solution mist remains suspended can be extended, allowing more of the processing liquid atmosphere to come into contact with the cleaning solution mist.

[0164] In the third embodiment, the position of the mist generator 105 relative to the first chemical nozzle 31 is kept constant while the first chemical nozzle 31 is moved horizontally. As a result, the cleaning mist generated from the mist generator 105 follows the first chemical nozzle 31 and lingers near the first chemical nozzle 31 even after it has moved. Therefore, it is not necessary to fill the chamber 12 containing the substrate W with cleaning mist, and the amount of cleaning solution consumed can be reduced compared to the previous case. This makes it possible to efficiently narrow the diffusion range of the processing liquid atmosphere while reducing the energy required for processing the substrate W and the environmental burden.

[0165] Next, a fourth embodiment will be described.

[0166] In Figures 15 to 16 below, configurations equivalent to those shown in Figures 1A to 14 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0167] The main difference between the fourth embodiment and the third embodiment is that the mist generator 105 is attached to the droplet shield 101 instead of the first chemical nozzle 31.

[0168] Figures 15 and 16 are schematic cross-sectional views showing a vertical cross-section of a mist generator 105 according to a fourth embodiment of the present invention. Figure 15 shows a cross-section cut by a vertical plane that does not pass through the two support arms 102, and Figure 16 shows a cross-section cut by a vertical plane that passes through the two support arms 102.

[0169] The liquid tank 107 of the mist generator 105 is located on the splash shield 101, not on the first chemical nozzle 31. Figures 15 and 16 show an example where the liquid tank 107 is integrated with the splash shield 101. The upper surface 103u of the shield plate 103 corresponds to the bottom surface of the liquid tank 107. In the example shown in Figures 15 and 16, multiple ultrasonic transducers 106 are arranged on the bottom surface of the liquid tank 107.

[0170] The liquid tank 107 includes a cylindrical inner wall 107i that surrounds the entire circumference of the first chemical nozzle 31, and a cylindrical outer wall 107o that surrounds the entire circumference of the inner wall 107i. Both the inner wall 107i and the outer wall 107o extend upward from the shield plate 103. The inner wall 107i and the outer wall 107o face each other with a horizontal gap between them. The cleaning liquid is stored in the space between the inner wall 107i and the outer wall 107o.

[0171] In the fourth embodiment, in addition to the effects of the third embodiment, the following effects can be achieved. Specifically, in the fourth embodiment, the liquid tank 107 is positioned above the splash shield 101 and overlaps the splash shield 101 in a plan view. In this case, it is easier to increase the volume of the liquid tank 107 compared to when the liquid tank 107 is positioned above the first chemical nozzle 31. In other words, it is easier to increase both or either the depth of the liquid tank 107 and the area of ​​the liquid tank 107 in a plan view. This allows more cleaning liquid to be held in the liquid tank 107.

[0172] Other Embodiments The first chemical nozzle 31 may be a nozzle other than a two-fluid nozzle. For example, the first chemical nozzle 31 may be a nozzle that generates multiple droplets without causing the liquid to collide with a gas. An example of such a nozzle is a high-pressure spray nozzle that sprays pressurized liquid downwards. When a high-pressure spray nozzle sprays pressurized liquid downwards, multiple droplets are generated that scatter downwards toward the upper surface of the substrate W, similar to a two-fluid nozzle, and an airflow is formed that flows downwards from the lower surface 90 or its vicinity of the first chemical nozzle 31.

[0173] The shape of the nozzle portion 81 is not limited to the shape shown in Figure 3, etc. For example, the nozzle portion 81 may include, instead of the upstream portion 87 and the downstream portion 88, a cylindrical large-diameter portion extending downward from the arm portion 82, a tapered portion that becomes thinner as it moves downward from the large-diameter portion, and a cylindrical small-diameter portion that extends downward from the tapered portion and is thinner than the large-diameter portion.

[0174] Instead of having the splash shield 101 held by the first chemical nozzle 31, the splash shield 101 may be made to hold the first chemical nozzle 31. For example, an arm may be provided to support the first chemical nozzle 31 via the splash shield 101. In this case, the arm portion 82 of the first chemical nozzle 31 is unnecessary.

[0175] The droplet shield 101 may not be a separate component from the first chemical nozzle 31, but may be an integral component with the first chemical nozzle 31. For example, the droplet shield 101 may be integrated with the upstream portion 87 of the first chemical nozzle 31.

[0176] The support arm 102 may be omitted from the splash shield 101. In this case, the shield plate 103 of the splash shield 101 may be a separate component attached to the first chemical nozzle 31, or it may be a component integrated with the first chemical nozzle 31.

[0177] If a connecting space S2 is formed to connect the upper space S1 to the inner space S3, then when the first chemical nozzle 31 is viewed from above, the entire inner circumference 103i of the shield plate 103 may be covered by other members.

[0178] The outer diameter of the shield plate 103 may be greater than or equal to the outer diameter of the substrate W. In this case, the first nozzle moving unit 38 may move the first chemical nozzle 31 and the shield plate 103 between the processing position and the standby position by moving them vertically in parallel above the substrate W. In other words, the standby position of the first chemical nozzle 31 and the shield plate 103 may be a position where the first chemical nozzle 31 and the shield plate 103 overlap the substrate W in a plan view.

[0179] The shape of the shield plate 103 is not limited to the shape shown in Figure 3, etc. For example, as shown in Figure 17, the vertical cross-section of the shield plate 103 may be airfoil-shaped. In this case, as the vertical distance from the upper surface of the substrate W to the lower surface 103L of the shield plate 103 decreases as it approaches the outer circumference 103o of the shield plate 103, the velocity of the airflow passing between the upper surface of the substrate W and the outer circumference 103o of the shield plate 103 can be increased.

[0180] The first chemical nozzle 31 and the splash shield 101 may be cleaned. For example, a liquid pipe may be provided to discharge a rinsing solution such as pure water towards the first chemical nozzle 31 and the splash shield 101 located in the standby pod 111 (see Figure 2B). In this case, a gas pipe may be provided to dry the first chemical nozzle 31 and the splash shield 101 by discharging gas towards them located in the standby pod 111.

[0181] Instead of providing liquid piping for cleaning the first chemical nozzle 31 and the splash shield 101 in the standby pod 111, or in addition to doing so, the first chemical nozzle 31 and the splash shield 101 may be cleaned using a bottom nozzle 47 (see Figure 2A) that discharges the processing liquid upward toward the bottom surface of the substrate W held in the spin chuck 21.

[0182] Specifically, with the substrate W not positioned above the spin chuck 21, and the first chemical nozzle 31 and splash shield 101 positioned above the lower nozzle 47, the first chemical nozzle 31 and splash shield 101 may be moved back and forth horizontally within the range in which the discharged rinsing liquid hits the first chemical nozzle 31 or the splash shield 101 while a rinsing liquid such as pure water is discharged from the lower nozzle 47.

[0183] The first chemical nozzle 31 and the splash shield 101 may be cleaned each time one or more substrates W are processed by one processing unit 2, or at regular intervals, or at any time. The first chemical nozzle 31 and the splash shield 101 may also be cleaned when performing maintenance on the processing unit 2 (for example, when performing chamber cleaning to clean the inside of the processing unit 2).

[0184] The spin chuck 21 is not limited to a mechanical chuck in which multiple chuck pins 22 are in contact with the outer surface of the substrate W, but may also be other types of chucks such as a vacuum chuck.

[0185] The substrate processing apparatus 1 is not limited to an apparatus for processing a disc-shaped substrate W, but may also be an apparatus for processing a polygonal substrate W.

[0186] You may combine two or more of the aforementioned components. You may also combine two or more of the aforementioned processes.

[0187] Furthermore, various design modifications can be made within the scope of the matters described in the patent claims. [Explanation of Symbols]

[0188] 1: Substrate processing equipment 31: First chemical solution nozzle (nozzle, two-fluid nozzle) 38: First nozzle movement unit (nozzle actuator) 90: Lower surface of the first chemical nozzle 94:Fluid outlet 101: Splash Shield 102: Support Arm 103: Shield Plate 103L: Underside of the shield plate 103i: Inner circumference of the shield plate 103o: Outer circumference of the shield plate 103u: Top surface of the shield plate 105: Mist Generator 106: Ultrasonic transducer 107:Liquid tank 124: Lifting Actuator S1: Upper space S2: Connection space S3: Interior space S4:Lower space W: Circuit board

Claims

1. A nozzle having a bottom surface with at least one discharge port opening for discharging liquid downwards, which generates multiple droplets that scatter downward toward the upper surface of a horizontal substrate, The nozzle, when viewed from below, comprises a shield plate including an inner circumference surrounding the lower surface of the nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface. The nozzle and shield plate form a connecting space that connects the upper space, which is the space above the upper surface of the shield plate and outside the inner circumference, to the inner space, which is the space inside the inner circumference. The aforementioned connecting space is a space that is connected vertically to the inner space and horizontally to the upper space. A substrate processing apparatus in which, when the nozzle is viewed from above, at least a portion of the inner circumference of the shield plate is visible.

2. A nozzle comprising a lower surface having at least one discharge port opening for discharging liquid downward, and generating a plurality of droplets that scatter downward toward the upper surface of a horizontal substrate, The nozzle, when viewed from below, comprises a shield plate including an inner circumference surrounding the lower surface of the nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface. The nozzle and shield plate form a connecting space that connects the upper space, which is the space above the upper surface of the shield plate and outside the inner circumference, to the inner space, which is the space inside the inner circumference. The aforementioned connecting space is a space that is connected vertically to the inner space and horizontally to the upper space. A substrate processing apparatus wherein at least a portion of the lower surface of the shield plate is positioned at the same height as the lower surface of the nozzle, or at a height above the lower surface of the nozzle.

3. A nozzle having a lower surface with at least one discharge port opening for discharging liquid downward, which generates a plurality of droplets that scatter downward toward the upper surface of a horizontal substrate, The nozzle, when viewed from below, comprises a shield plate including an inner circumference surrounding the lower surface of the nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface. The nozzle and shield plate form a connecting space that connects the upper space, which is the space above the upper surface of the shield plate and outside the inner circumference, to the inner space, which is the space inside the inner circumference. The aforementioned connecting space is a space that is connected vertically to the inner space and horizontally to the upper space. A substrate processing apparatus further comprising a lifting actuator for moving the shield plate up and down relative to the nozzle.

4. A nozzle having a lower surface with at least one discharge port opening for discharging liquid downward, which generates a plurality of droplets that scatter downward toward the upper surface of a horizontal substrate, The nozzle, when viewed from below, comprises a shield plate including an inner circumference surrounding the lower surface of the nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface. The nozzle and shield plate form a connecting space that connects the upper space, which is the space above the upper surface of the shield plate and outside the inner circumference, to the inner space, which is the space inside the inner circumference. The aforementioned connecting space is a space that is connected vertically to the inner space and horizontally to the upper space. A substrate processing apparatus further comprising a mist generator held in the nozzle for generating a mist of cleaning solution.

5. The substrate processing apparatus further comprises a support arm that connects the shield plate to the nozzle, The substrate processing apparatus according to claim 4, wherein the mist generator includes a liquid tank for storing the cleaning liquid in at least one of the nozzle and the shield plate, and an ultrasonic transducer for generating the mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank.

6. The substrate processing apparatus according to claim 4, further comprising a nozzle actuator for horizontally moving the nozzle, shield plate, and mist generator while maintaining a constant position of the mist generator relative to the nozzle.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein the outer diameter of the shield plate is smaller than the outer diameter of the substrate.

8. The substrate processing apparatus according to claim 7, further comprising a nozzle actuator for horizontally moving the nozzle and the shield plate.

9. The substrate processing apparatus according to any one of claims 1 to 6, wherein the nozzle is a two-fluid nozzle that generates a plurality of droplets that scatter downward toward the upper surface of the substrate by discharging liquid and gas downward from at least one discharge port opening on the lower surface of the nozzle.

10. The process involves discharging a liquid downward from at least one discharge port opening on the lower surface of a nozzle, thereby scattering multiple droplets downward toward the upper surface of a horizontal substrate. The process includes the following steps: When the nozzle is discharging the liquid, the nozzle is viewed from below, with the lower surface of the shield plate, which extends outward from the inner circumference of the shield plate surrounding the lower surface of the nozzle, facing the upper surface of the substrate, and the process includes forming a connecting space by the nozzle and the shield plate, which is a space above the lower surface of the shield plate, above the upper surface of the shield plate, which extends outward from the inner circumference, and outside the inner circumference, and which is a space inside the inner circumference, and which is connected vertically to the inner space and horizontally to the upper space, and when the nozzle is discharging the liquid, the lower surface of the shield plate, which extends outward from the inner circumference of the shield plate, facing the upper surface of the substrate, and which connects the upper space, which is a space above the lower surface of the shield plate, which extends outward from the inner circumference, and outside the inner circumference, and which is a space inside the inner circumference, and which is connected vertically to the inner space and horizontally to the upper space, when the nozzle is viewed from below, A substrate processing method wherein, when the nozzle is viewed from above, at least a portion of the inner circumference of the shield plate is visible.

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