Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing device and a substrate processing method that can bring a cleaning solution mist into contact with a processing solution atmosphere and reduce the amount of cleaning solution consumed.SOLUTION: A substrate processing device includes a processing liquid nozzle 31 that discharges a processing liquid toward the upper surface of a horizontal substrate W, a mist generator 105 that generates a mist of cleaning liquid floating near the processing liquid nozzle 31, and a nozzle actuator 38 that moves a collision position P1 where the processing liquid discharged from the processing liquid nozzle 31 collides with the upper surface of the substrate W within the upper surface of the substrate W by moving the processing liquid nozzle 31 and the mist generator 105.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of the substrate include semiconductor wafers, substrates for flat panel displays (FPDs) such as liquid crystal display devices and organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Background Art

[0002] Patent Document 1 discloses that by spraying water onto a mist injection nozzle protruding from a side wall of a chamber or a rectifying plate in the chamber, a space where a substrate is disposed is filled with water mist, and in this state, by discharging a chemical solution from a chemical solution nozzle, the water mist is brought into contact with the chemical solution atmosphere floating in the space.

Prior Art Documents

Patent Documents

[0003] [

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the apparatus and method described in Patent Document 1, since the space where the substrate is disposed is filled with water mist, a large amount of water is required.

[0005] Therefore, one of the objects of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of bringing the mist of a cleaning liquid into contact with a processing liquid atmosphere and reducing the consumption amount of the cleaning liquid. [[ID=四十一]]

Means for Solving the Problems

[0006] One embodiment of the present invention provides a substrate processing apparatus comprising: a processing liquid nozzle for discharging a processing liquid toward the upper surface of a horizontal substrate; a mist generator for generating a mist of cleaning liquid floating near the processing liquid nozzle; and a nozzle actuator for moving the processing liquid nozzle and the mist generator, thereby moving the collision position within the upper surface of the substrate at which the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate.

[0007] In this configuration, a processing liquid, such as a chemical solution or rinsing solution, is discharged from the processing liquid nozzle toward the top surface of the substrate. When the processing liquid nozzle discharges the processing liquid, a processing liquid atmosphere, such as splashes or mist, is generated near the substrate. In particular, when SPM (a mixture of sulfuric acid and hydrogen peroxide) at a temperature of 100°C or higher is discharged from the processing liquid nozzle, the evaporation of water contained in the SPM causes SPM droplets or mist to be violently ejected from the processing liquid nozzle. In some cases, fumes (smoke-like gases) may be generated from the substrate due to the reaction between the SPM and the resist.

[0008] The processing liquid atmosphere floating near the processing liquid nozzle comes into contact with the cleaning liquid mist generated from the mist generator. This contact causes the processing liquid particles to combine with the cleaning liquid particles, transforming them into larger, heavier liquid particles. As the weight of the particles increases, the processing liquid atmosphere becomes less likely to flow upward, and the area over which the processing liquid atmosphere diffuses narrows. In particular, since the cleaning liquid mist comes into contact with the processing liquid atmosphere near the processing liquid nozzle, which is the main source of the processing liquid atmosphere, the diffusion range of the processing liquid atmosphere can be effectively narrowed. As a result, the processing liquid atmosphere adhering to the substrate after drying or to components placed near the substrate can be eliminated or reduced, thereby reducing contamination of the substrate and other components caused by the processing liquid atmosphere.

[0009] Furthermore, the nozzle actuator moves not only the processing liquid nozzle but also the mist generator. The cleaning liquid mist generated from the mist generator follows the processing liquid nozzle that is discharging the processing liquid and lingers near the processing liquid nozzle even after it has moved. Therefore, it is not necessary to fill the chamber containing the substrate with cleaning liquid mist, and the amount of cleaning liquid consumed can be reduced compared to such cases. This makes it possible to efficiently narrow the diffusion range of the processing liquid atmosphere while reducing the energy required for processing the substrate and the environmental burden.

[0010] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0011] The mist generator includes a liquid tank for storing the cleaning liquid and moving together with the processing liquid nozzle, and an ultrasonic transducer for generating mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank.

[0012] In this configuration, instead of evaporating the cleaning solution in the liquid tank with a heater or spraying the cleaning solution through a mist nozzle, the cleaning solution in the liquid tank, which moves together with the processing nozzle, is vibrated by an ultrasonic transducer to generate a mist of the cleaning solution. The ultrasonic transducer is superior to a heater in that it can generate mist in a shorter time, and it is superior to a mist nozzle in that it can generate a finer mist with a relatively simple configuration. By making the cleaning solution particles smaller, the time that the cleaning solution mist remains suspended can be extended, allowing more of the processing liquid atmosphere to come into contact with the cleaning solution mist.

[0013] The liquid tank is positioned above the processing liquid nozzle so as to overlap it with the processing liquid nozzle in a plan view.

[0014] In this configuration, the liquid tank is positioned above the processing liquid nozzle and overlaps it in a plan view. Therefore, the cleaning liquid mist can be generated at a higher position compared to when the liquid tank is positioned around the processing liquid nozzle. This extends the time it takes for the cleaning liquid mist to come into contact with the substrate or the liquid on the substrate, and thus extends the time the cleaning liquid mist remains suspended in the air.

[0015] The mist generator further includes cleaning fluid piping that supplies the cleaning fluid to the liquid tank and moves together with the processing fluid nozzle.

[0016] In this configuration, cleaning fluid is supplied from the cleaning fluid piping to the liquid tank. The cleaning fluid piping moves together with the processing fluid nozzle. Therefore, it is not necessary to move the processing fluid nozzle to a specific position in order to supply cleaning fluid to the liquid tank, and cleaning fluid can be supplied to the liquid tank at any position. Furthermore, by replenishing the cleaning fluid in the liquid tank from the cleaning fluid piping, it is possible to increase the amount of mist generated per unit time, or the time for which mist can be generated, even if the capacity of the liquid tank is small.

[0017] The substrate processing apparatus further includes a splash shield that moves together with the processing liquid nozzle, and includes a shield surface that directly faces the upper surface of the substrate.

[0018] In this configuration, the shield surface of the splash shield is positioned directly opposite the top surface of the substrate. When the processing liquid nozzle discharges the processing liquid toward the top surface of the substrate, the processing liquid collides with the top surface of the substrate or the liquid on the substrate, generating splashes of processing liquid that scatter upwards. These splashes can be caught by the shield surface of the splash shield. Furthermore, since the splash shield moves with the processing liquid nozzle, the splash shield can catch splashes of processing liquid that scatter upwards from the substrate regardless of the position of the processing liquid nozzle.

[0019] If the processing liquid nozzle includes a processing liquid discharge port that discharges the processing liquid in a processing liquid discharge direction inclined with respect to the upper surface of the substrate toward a target position within the upper surface of the substrate, the shield surface may or may not overlap the target position in a plan view. In either case, when the processing liquid nozzle and the shield surface are viewed from below, any portion of the processing liquid discharge port may be located outside or on the outer edge of the shield surface, or inside the outer edge of the shield surface.

[0020] If the processing liquid nozzle includes a processing liquid discharge port that discharges the processing liquid in a processing liquid discharge direction perpendicular to the upper surface of the substrate toward a target position on the upper surface of the substrate, when viewed from below, the processing liquid nozzle and the shield surface may be located outside the outer edge of the shield surface, or inside the outer edge of the shield surface. In the latter case, when viewed from below, the outer edge of the shield surface may surround the processing liquid discharge port.

[0021] The mist generator includes a liquid tank for storing the cleaning liquid and moving together with the processing liquid nozzle, and an ultrasonic transducer for generating mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank, wherein the liquid tank is positioned above the splash shield so as to overlap the splash shield in a plan view.

[0022] In this configuration, the cleaning solution in the liquid tank is vibrated by an ultrasonic transducer, generating mist from the cleaning solution. The liquid tank is positioned above the splash shield and overlaps it in a plan view. In this case, it is easier to increase the volume of the liquid tank compared to when the liquid tank is positioned above the processing nozzle. In other words, it is easier to increase both or either the depth of the liquid tank and / or the area of ​​the liquid tank in a plan view. This allows more cleaning solution to be held in the liquid tank.

[0023] The substrate processing apparatus further includes a shield plate. The processing liquid nozzle includes a lower surface having at least one discharge port for discharging liquid downward, generates a plurality of droplets that scatter downward toward the upper surface of the substrate, and the shield plate includes an inner periphery surrounding the lower surface of the processing liquid nozzle when viewed from below the processing liquid nozzle, an annular lower surface extending outward from the inner periphery and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner periphery above the lower surface. The processing liquid nozzle and the shield plate form a connection space that connects an upper space, which is a space outside the inner periphery above the upper surface of the shield plate, to an inner space, which is a space inside the inner periphery. The connection space is a space that is vertically continuous with the inner space and horizontally continuous with the upper space.

[0024] According to this configuration, a plurality of droplets are generated that scatter downward from the lower surface of the processing liquid nozzle toward the upper surface of the horizontal substrate. The plurality of droplets collide with the upper surface of the substrate or the liquid on the substrate. At this time, splashes scatter upward from the substrate. Such splashes collide with and fall on the lower surface of the shield plate facing the upper surface of the substrate. Thereby, the range in which the processing liquid atmosphere containing the particles of the processing liquid diffuses can be narrowed.

[0025] Furthermore, when the processing liquid nozzle generates a plurality of droplets, an air flow is generated that flows downward from the lower surface of the processing liquid nozzle. This air flow flows downward from the lower surface of the processing liquid nozzle toward the upper surface of the substrate. Thereafter, this air flow radially flows in a direction away from the processing liquid nozzle horizontally while spreading vertically between the lower surface of the shield plate and the upper surface of the substrate. The lower surface of the shield plate restricts the vertical spread of the air flow and reduces the decrease in the horizontal velocity component of the air flow. Thereby, the horizontal velocity component of the air flow can be maintained at a large value even after the air flow passes between the shield plate and the substrate, and the air flow can reach a member surrounding the substrate such as a guard.

[0026] In addition, the processing liquid nozzle and the shield plate form a connection space that connects an upper space, which is a space above the upper surface of the shield plate and outside the inner circumference of the shield plate, to an inner space, which is a space inside the inner circumference of the shield plate. The connection space is located above the inner space and inside the upper space. The connection space is a space that is vertically continuous with the inner space and horizontally continuous with the upper space. A lower space, which is a space between the lower surface of the shield plate and the upper surface of the substrate, is connected to the upper space via the inner space and the connection space.

[0027] The airflow flowing downward from the lower surface of the processing liquid nozzle can pass through the inside of the inner circumference of the shield plate. Further, this airflow flows radially in a direction away from the processing liquid nozzle between the lower surface of the shield plate and the upper surface of the substrate. The gas in the vicinity of the processing liquid nozzle or the shield plate is attracted by the viscosity of the gas toward the airflow flowing downward from the processing liquid nozzle and the airflow flowing radially along the upper surface of the substrate, and flows together with these airflows.

[0028] <​​​​​​​​Another embodiment of the present invention provides a substrate processing method that includes the steps of: discharging a processing liquid from the processing liquid nozzle toward the upper surface of a horizontal substrate while generating a mist of cleaning liquid floating near the processing liquid nozzle in a mist generator; and moving the processing liquid nozzle and mist generator with a nozzle actuator so that the collision position where the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate is moved within the upper surface of the substrate. This method can achieve the same effects as the substrate processing apparatus described above. At least one of the features of the substrate processing apparatus described above may be added to the substrate processing method. [Brief explanation of the drawing]

[0031] [Figure 1A] This is a schematic plan view showing the layout of a substrate processing apparatus according to the first embodiment of the present invention. [Figure 1B] This is a schematic side view of a substrate processing device. [Figure 2A] This is a schematic diagram showing the inside of the processing unit viewed horizontally. [Figure 2B] This is a schematic plan view showing the inside of the processing unit. [Figure 3] This is a block diagram showing the electrical configuration of a substrate processing device. [Figure 4A-C] This is a schematic diagram showing the first chemical nozzle, the second chemical nozzle, and the first rinse nozzle. [Figure 5A] Figure 4C is a schematic cross-sectional view showing the vertical cross-section of the first chemical nozzle along the VA-VA line. [Figure 5B] This is a schematic cross-sectional view showing the vertical cross-section of the first chemical nozzle along the VB-VB line shown in Figure 5A. [Figure 6] This is a schematic diagram showing the first chemical nozzle and splash shield as viewed from the left side of the splash shield. [Figure 7] This is a magnified view of a portion of Figure 6. [Figure 8] This is a schematic diagram showing the first chemical nozzle and splash shield as viewed from the rear of the splash shield. [Figure 9]This is a schematic diagram of the first chemical nozzle and splash shield, viewed from the front of the splash shield. [Figure 10] This is a schematic diagram of the first chemical nozzle and splash shield, viewed from above the splash shield. [Figure 11] This is a schematic diagram of the first chemical nozzle and splash shield, viewed from below the splash shield. [Figure 12] This is a schematic diagram showing the positions of the first chemical nozzle and the splash shield relative to the substrate. [Figure 13] This is a schematic diagram showing the position of the splash shield relative to the first guard when the first chemical nozzle is discharging the chemical solution toward the outer periphery of the upper surface of the substrate. [Figure 14] This is a schematic diagram illustrating the contact between an atmosphere containing chemical particles and a mist of pure water containing pure water particles. [Figure 15] This is a schematic diagram of the first chemical nozzle and splash shield according to the second embodiment of the present invention, viewed horizontally. [Figure 16] This is a schematic diagram of a top view of the first chemical nozzle and splash shield according to a second embodiment of the present invention. [Figure 17] This is a schematic cross-sectional view showing a vertical cross-section of the first chemical nozzle and splash shield according to the third embodiment of the present invention. [Figure 18] This is a schematic diagram of the first chemical nozzle and splash shield according to the third embodiment of the present invention, viewed from above. [Figure 19] This is a schematic cross-sectional view showing a vertical cross-section of the first chemical nozzle and splash shield according to the fourth embodiment of the present invention. [Figure 20] This is a schematic cross-sectional view showing a vertical cross-section of a splash shield according to the fifth embodiment of the present invention. [Figure 21] This is a schematic diagram of the first chemical nozzle and splash shield according to the fifth embodiment of the present invention, viewed horizontally. [Figure 22] This is a schematic diagram of the first liquid nozzle and splash shield according to the fifth embodiment of the present invention, viewed from below. [Figure 23] This is a schematic diagram illustrating the connection space according to the fifth embodiment of the present invention. [Figure 24] This is a schematic diagram illustrating the airflow formed by the discharge of liquid and gas by the first chemical nozzle according to the fifth embodiment of the present invention. [Modes for carrying out the invention]

[0032] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0033] Figure 1A is a schematic plan view showing the layout of the substrate processing apparatus 1 according to the first embodiment of the present invention. Figure 1B is a schematic side view of the substrate processing apparatus 1.

[0034] The substrate processing apparatus 1 is a single-wafer type apparatus that processes disc-shaped substrates W, such as semiconductor wafers, one at a time. The substrate processing apparatus 1 comprises a load port LP that holds carriers CA that contain substrates W, a plurality of processing units 2 that process the substrates W transported from the carriers CA on the load port LP with processing fluids such as processing liquid and processing gas, a transport system 5 that transports the substrates W between the carriers CA on the load port LP and the plurality of processing units 2, and a control device 3 that controls the substrate processing apparatus 1.

[0035] Multiple processing units 2 form multiple towers TW, each containing multiple processing units 2. Figure 1A shows an example where four towers TW are formed. As shown in Figure 1B, the multiple processing units 2 contained in one tower TW are stacked vertically. As shown in Figure 1A, the multiple towers TW form two rows aligned in the depth direction of the substrate processing apparatus 1 (a direction perpendicular to the arrangement direction of the multiple load ports LP in a plan view). In a plan view, the two rows face each other via a transport path 4.

[0036] The transport system 5 includes an indexer robot IR that transports substrates W between a carrier CA on a load port LP and a plurality of processing units 2, and a center robot CR that transports substrates W between the indexer robot IR and the plurality of processing units 2. The indexer robot IR is positioned between the load port LP and the center robot CR in a plan view. The center robot CR is positioned on the transport path 4.

[0037] The indexer robot IR includes one or more hands Hi that horizontally support the substrate W. The hands Hi are movable parallel to both the horizontal and vertical directions. The hands Hi are rotatable around a vertical line. The hands Hi can load and unload the substrate W to and from the carrier CA on any load port LP, and can transfer the substrate W to and from the center robot CR.

[0038] The center robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc are movable parallel to both the horizontal and vertical directions. The hands Hc are rotatable around a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can load and unload the substrate W to and from any processing unit 2.

[0039] A carrier CA containing multiple substrates W is placed on a load port LP by a carrier transport robot installed in a manufacturing plant that produces semiconductor equipment, FPDs, etc. An indexer robot IR unloads unprocessed substrates W from the carrier CA on the load port LP and passes the unloaded substrates W to a center robot CR. The center robot CR loads the received substrates W into one of the processing units 2. This processes the substrates W.

[0040] The center robot CR unloads the processed substrates W from the processing unit 2 and hands them over to the indexer robot IR. The indexer robot IR transports the received substrates W to the load port LP and loads them into the carrier CA that was originally holding them or into another carrier CA. The carrier CA containing multiple processed substrates W is then transported from the load port LP to the next destination by a carrier transport robot.

[0041] Next, we will describe the processing unit 2.

[0042] Figure 2A is a schematic diagram of the inside of the processing unit 2 viewed horizontally. Figure 2B is a schematic plan view showing the inside of the processing unit 2. As shown in Figure 2A, the processing unit 2 includes a box-shaped chamber 12 having an internal space, a spin chuck 21 that holds a single substrate W horizontally within the chamber 12 and rotates the substrate W around a vertical rotation axis A1 passing through the center of the substrate W, and a plurality of nozzles that supply processing liquids such as chemical solutions and rinsing solutions to the substrate W held by the spin chuck 21.

[0043] As shown in Figure 2B, the chamber 12 includes a box-shaped partition wall 13 through which substrates W transported by the central robot CR (see Figure 1A) pass, and a shutter 17 for opening and closing the input / output port 13b. As shown in Figure 2A, the chamber 12 further includes a rectifier plate 18 positioned below an air outlet 13a that opens in the ceiling surface of the partition wall 13. An FFU (Fan Filter Unit 11) that supplies clean air (air filtered by a filter) is positioned above the air outlet 13a. The air outlet 13a is located at the upper end of the chamber 12, and the exhaust duct 78, described later, is located at the lower end of the chamber 12. The upstream end 78u of the exhaust duct 78 is located inside the chamber 12, and the downstream end of the exhaust duct 78 is located outside the chamber 12.

[0044] The rectifier plate 18 divides the internal space of the chamber 12 into an upper space Su above the rectifier plate 18 and a lower space SL below the rectifier plate 18. The upper space Su between the ceiling surface of the partition wall 13 and the upper surface of the rectifier plate 18 is a diffusion space where clean air diffuses. The lower space SL between the lower surface of the rectifier plate 18 and the floor surface of the partition wall 13 is a processing space where the substrate W is processed. The spin chuck 21 is located in the lower space SL. The vertical distance from the floor surface of the partition wall 13 to the lower surface of the rectifier plate 18 is longer than the vertical distance from the upper surface of the rectifier plate 18 to the ceiling surface of the partition wall 13.

[0045] The FFU 11 supplies clean air to the upper space Su via the air outlet 13a. The clean air supplied to the upper space Su strikes the rectifier plate 18 and diffuses within the upper space Su. The clean air in the upper space Su passes through multiple through holes that penetrate the rectifier plate 18 vertically and flows downward from the entire surface of the rectifier plate 18. The clean air supplied to the lower space SL is drawn into the exhaust duct 78 and discharged from the chamber 12. As a result, a uniform downward flow of clean air flowing downward from the rectifier plate 18 is formed in the lower space SL. The processing of the substrate W is carried out while the downward flow of clean air is formed.

[0046] The spin chuck 21 includes a plurality of chuck pins 22 that horizontally clamp the substrate W, and a disc-shaped spin base 23 that supports the plurality of chuck pins 22. The spin chuck 21 further includes a spin shaft 24 extending downward from the center of the spin base 23, an electric motor 25 that rotates the plurality of chuck pins 22 and the spin base 23 by rotating the spin shaft 24, and a chuck housing 26 that surrounds the electric motor 25.

[0047] The spin base 23 includes a circular upper surface positioned below the substrate W and a cylindrical outer surface extending downward from the outer circumference of the upper surface of the spin base 23. The upper surface of the spin base 23 is parallel to the lower surface of the substrate W. The upper surface of the spin base 23 is separated from the lower surface of the substrate W. The upper surface of the spin base 23 is concentric with the substrate W. The outer diameter of the upper surface of the spin base 23 is greater than the outer diameter of the substrate W. The chuck pin 22 protrudes upward from the outer circumference of the upper surface of the spin base 23.

[0048] As shown in Figure 2A, the plurality of nozzles include a first chemical nozzle 31, a second chemical nozzle 32, and a third chemical nozzle 39 that discharge a chemical solution toward the upper surface of the substrate W, and a first rinse nozzle 33 and a second rinse nozzle 45 that discharge a rinse solution toward the upper surface of the substrate W. The plurality of nozzles further includes a solvent nozzle 42 that discharges a liquid organic solvent toward the upper surface of the substrate W.

[0049] Figure 2A shows an example in which SPM (a mixture of sulfuric acid and hydrogen peroxide) is discharged from the first chemical nozzle 31, DHF (dilute hydrofluoric acid) is discharged from the second chemical nozzle 32, and SC1 (a mixture of ammonia water, hydrogen peroxide, and water) is discharged from the third chemical nozzle 39. In this example, pure water (deionized water: DIW) is discharged from the first rinse nozzle 33 and the second rinse nozzle 45, and IPA (isopropyl alcohol) is discharged from the solvent nozzle 42.

[0050] The chemical solution may be a liquid other than SPM, DHF, and SC1. Specifically, the chemical solution may be a liquid containing at least one of the following: sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, aqueous ammonia, aqueous hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid, etc.), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactants, and corrosion inhibitors, or it may be a liquid other than those listed above. The same chemical solution (a chemical solution with the same components and concentration) may be discharged from two or more of the first chemical solution nozzle 31, the second chemical solution nozzle 32, and the third chemical solution nozzle 39.

[0051] The rinsing solution may be a liquid other than pure water. The organic solvent may be a liquid other than IPA. Specifically, the rinsing solution may contain at least one of the following: pure water, carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, hydrochloric acid water at a dilution concentration (e.g., about 10-100 ppm), and ammonia water at a dilution concentration (e.g., about 10-100 ppm), or it may be any other liquid. The organic solvent may contain at least one of the following: IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene, or it may be any other liquid. Rinsing solutions with at least one different component and concentration may be discharged from the first rinsing solution nozzle 33 and the second rinsing solution nozzle 45.

[0052] The first chemical nozzle 31 may be a scanning nozzle that moves the collision position of the processing liquid with respect to the substrate W within the upper surface of the substrate W, or it may be a fixed nozzle that cannot move the collision position of the processing liquid with respect to the substrate W. The same applies to the other nozzles. Figure 2A shows an example in which the first chemical nozzle 31, second chemical nozzle 32, third chemical nozzle 39, first rinse nozzle 33, and solvent nozzle 42 are scanning nozzles, and the second rinse nozzle 45 is a fixed nozzle.

[0053] Processing unit 2 includes a nozzle moving unit for horizontally moving one or more scan nozzles. One nozzle moving unit may be connected to two or more scan nozzles, or one nozzle moving unit may be provided for each scan nozzle. Figure 2B shows an example in which the first chemical nozzle 31, the second chemical nozzle 32, and the first rinse nozzle 33 are connected to the first nozzle moving unit 38, the third chemical nozzle 39 is connected to the second nozzle moving unit 41, and the solvent nozzle 42 is connected to the third nozzle moving unit 44. Hereafter, the first chemical nozzle 31, the second chemical nozzle 32, and the first rinse nozzle 33 may be referred to as the "three nozzles".

[0054] Figure 2B shows an example in which the first nozzle moving unit 38, the second nozzle moving unit 41, and the third nozzle moving unit 44 are each swivel units that move one or more scan nozzles horizontally along an arc-shaped path in a plan view. Because the radius of the arc-shaped path is large, the swivel units move one or more scan nozzles horizontally along a path that can be considered a straight line in a plan view. At least one of the first nozzle moving unit 38, the second nozzle moving unit 41, and the third nozzle moving unit 44 may be a slide unit that moves one or more scan nozzles horizontally along a straight path in a plan view.

[0055] The first nozzle moving unit 38 is an example of a nozzle actuator. The first chemical nozzle 31 is an example of a processing liquid nozzle. A nozzle actuator is an actuator that moves a processing liquid nozzle. An actuator is a device that converts electrical, fluid, magnetic, thermal, or chemical energy into mechanical work. Actuators include electric motors, air cylinders, and other devices. A nozzle actuator may be an electric motor or an air cylinder, or otherwise. The definition of an actuator is the same for other actuators.

[0056] The first nozzle movement unit 38 includes a horizontal drive actuator that moves one or more scan nozzles horizontally by rotating them around a vertical line, and a vertical drive actuator that moves one or more scan nozzles vertically. The same applies to the second nozzle movement unit 41 and the third nozzle movement unit 44. The horizontal drive actuator and the vertical drive actuator are, for example, electric motors. The horizontal drive actuator and the vertical drive actuator may be actuators other than electric motors, such as air cylinders.

[0057] As shown in Figure 2A, the first chemical nozzle 31 is connected to a sulfuric acid pipe 34p that guides sulfuric acid toward the first chemical nozzle 31, and a hydrogen peroxide pipe 35p that guides hydrogen peroxide toward the first chemical nozzle 31. The sulfuric acid valve 34v and the flow control valve 34f are interposed in the sulfuric acid pipe 34p. The hydrogen peroxide valve 35v and the flow control valve 35f are interposed in the hydrogen peroxide pipe 35p. The sulfuric acid pipe 34p is an example of a first component liquid pipe, and the hydrogen peroxide pipe 35p is an example of a second component liquid pipe.

[0058] Although not shown in the diagram, the sulfuric acid valve 34v includes a valve body with an annular valve seat through which a processing liquid such as sulfuric acid passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position where the valve element is in contact with the valve seat and an open position where the valve element is away from the valve seat. The same applies to other valves such as the hydrogen peroxide valve 35v. The actuator may be a pneumatic actuator or an electric actuator, or any other type of actuator. The control device 3 opens and closes the sulfuric acid valve 34v by controlling the actuator.

[0059] When the sulfuric acid valve 34v is opened, sulfuric acid is supplied from the sulfuric acid piping 34p to the first chemical nozzle 31 at a flow rate corresponding to the opening of the flow control valve 34f. When the hydrogen peroxide valve 35v is opened, hydrogen peroxide is supplied from the hydrogen peroxide piping 35p to the first chemical nozzle 31 at a flow rate corresponding to the opening of the flow control valve 35f. When the sulfuric acid valve 34v and the hydrogen peroxide valve 35v are opened, the sulfuric acid and hydrogen peroxide mix together to produce SPM. This SPM is then continuously discharged downward from the first chemical nozzle 31.

[0060] When sulfuric acid and hydrogen peroxide are mixed, high-temperature SPM is generated due to the heat of dilution of the sulfuric acid. The temperature of the SPM discharged from the first chemical nozzle 31 is, for example, higher than 100°C. The temperature of the sulfuric acid before mixing with hydrogen peroxide is, for example, higher than 100°C. The substrate processing apparatus 1 is equipped with a heater 34h for heating the sulfuric acid supplied to the first chemical nozzle 31. The temperature of the hydrogen peroxide before mixing with sulfuric acid is, for example, room temperature (e.g., 20-30°C). The temperature of the hydrogen peroxide before mixing with sulfuric acid may be higher than room temperature.

[0061] The second chemical nozzle 32 is connected to a second chemical pipe 36p that guides DHF toward the second chemical nozzle 32. The first rinse nozzle 33 is connected to a first rinse pipe 37p that guides pure water toward the first rinse nozzle 33. When the second chemical valve 36v, which is interposed in the second chemical pipe 36p, is opened, DHF is supplied from the second chemical pipe 36p to the second chemical nozzle 32 and continuously discharged downward from the second chemical nozzle 32. When the first rinse valve 37v, which is interposed in the first rinse pipe 37p, is opened, pure water is supplied from the first rinse pipe 37p to the first rinse nozzle 33 and continuously discharged downward from the first rinse nozzle 33. The temperature of the pure water discharged from the first rinse nozzle 33 may be room temperature or higher than room temperature.

[0062] The first nozzle moving unit 38 moves the three nozzles horizontally between a processing position where processing liquid discharged from the three nozzles, namely the first chemical nozzle 31, the second chemical nozzle 32, and the first rinse nozzle 33, is supplied to the upper surface of the substrate W, and a standby position where the three nozzles are positioned around the spin chuck 21 in a plan view. The three nozzles are supported by the first nozzle moving unit 38 in a horizontal arrangement in the order of the first chemical nozzle 31, the first rinse nozzle 33, and the second chemical nozzle 32. As shown in Figure 2B, when the first nozzle moving unit 38 moves the three nozzles to the standby position, the first chemical nozzle 31 is positioned on the substrate W side in a plan view relative to the second chemical nozzle 32 and the first rinse nozzle 33.

[0063] The processing unit 2 includes a splash shield 101 that catches splashes of chemical solution generated when the first chemical solution nozzle 31 discharges the chemical solution toward the upper surface of the substrate W, and a standby pod 111 that houses the first chemical solution nozzle 31 and the splash shield 101. The splash shield 101 is positioned around the first chemical solution nozzle 31 and moves together with the first chemical solution nozzle 31. The standby pod 111 is positioned so as to overlap the first chemical solution nozzle 31 and the splash shield 101 in a plan view when the first chemical solution nozzle 31 is in the standby position. Details of the splash shield 101 will be described later.

[0064] The third chemical nozzle 39 is connected to a third chemical pipe 40p that guides SC1 toward the third chemical nozzle 39. When the third chemical valve 40v interposed in the third chemical pipe 40p is opened, SC1 is supplied from the third chemical pipe 40p to the third chemical nozzle 39 and continuously discharged downward from the third chemical nozzle 39. The second nozzle moving unit 41 moves the third chemical nozzle 39 horizontally between a processing position in which the processing liquid discharged from the third chemical nozzle 39 is supplied to the upper surface of the substrate W, and a standby position in which the third chemical nozzle 39 is positioned around the spin chuck 21 in a plan view.

[0065] The solvent nozzle 42 is connected to a solvent pipe 43p that guides IPA toward the solvent nozzle 42. When the solvent valve 43v interposed in the solvent pipe 43p is opened, IPA is supplied from the solvent pipe 43p to the solvent nozzle 42 and continuously discharged downward from the solvent nozzle 42. The third nozzle moving unit 44 moves the solvent nozzle 42 horizontally between a processing position in which the processing liquid discharged from the solvent nozzle 42 is supplied to the upper surface of the substrate W, and a standby position in which the solvent nozzle 42 is positioned around the spin chuck 21 in a plan view.

[0066] The second rinse fluid nozzle 45 is connected to a second rinse fluid pipe 46p that guides pure water toward the second rinse fluid nozzle 45. When the second rinse fluid valve 46v, which is interposed in the second rinse fluid pipe 46p, is opened, pure water is supplied from the second rinse fluid pipe 46p to the second rinse fluid nozzle 45 and continuously discharged downward from the second rinse fluid nozzle 45. The second rinse fluid nozzle 45, being a fixed nozzle, is fixed to the partition wall 13 of the chamber 12. The second rinse fluid nozzle 45 discharges pure water toward the center of the upper surface of the substrate W.

[0067] As shown in Figure 2A, the plurality of nozzles further include a bottom nozzle 47 that discharges the processing liquid upward toward the center of the lower surface of the substrate W. The bottom nozzle 47 includes a disc portion positioned horizontally between the upper surface of the spin base 23 and the lower surface of the substrate W. The disc portion is annular in shape surrounding the axis of rotation A1 and has an outer diameter smaller than the diameter of the substrate W. The discharge port of the bottom nozzle 47 opens at the center of the upper surface of the disc portion. The discharge port of the bottom nozzle 47 faces the center of the lower surface of the substrate W in the vertical direction.

[0068] The processing unit 2 surrounds the spin chuck 21 within the chamber 12 and includes a cylindrical processing cup 52 that receives the processing liquid splashed outward from the substrate W. The processing cup 52 includes a plurality of guards 53 that receive the processing liquid splashed outward from the substrate W, and a plurality of cups 68 that receive the processing liquid guided downward by the plurality of guards 53. Figure 2A shows an example in which two guards 53 and two cups 68 are provided, and the outermost cup 68 is integrated with the second outermost guard 53.

[0069] The two guards 53 concentrically surround the spin chuck 21. The two cups 68 also concentrically surround the spin chuck 21. Hereafter, the outermost guard 53 will be referred to as the first guard 53A, and the remaining guard 53 as the second guard 53B. Similarly, the outermost cup 68 will be referred to as the first cup 68A, and the remaining cup 68 as the second cup 68B. The first guard 53A and the second guard 53B are sometimes collectively referred to as guard 53, and the first cup 68A and the second cup 68B are sometimes collectively referred to as cup 68.

[0070] As shown in Figure 2A, the guard 53 includes a cylindrical portion 54 that surrounds the spin chuck 21 and a cylindrical ceiling portion 60 that extends diagonally upward from the cylindrical portion 54 toward the axis of rotation A1. The ceiling portion 60 includes a cylindrical inclined portion 61 that extends diagonally upward toward the axis of rotation A1, a circular horizontal portion 62 (see Figure 13) that extends horizontally toward the axis of rotation A1 from the upper end of the inclined portion 61, and a circular folded portion 63 (see Figure 13) that protrudes downward from the inner end of the horizontal portion 62, which corresponds to the inner end of the ceiling portion 60. The cylindrical portion 54 of the first guard 53A and the cylindrical portion 54 of the second guard 53B concentrically surround the spin chuck 21. The ceiling portion 60 of the first guard 53A is positioned above the ceiling portion 60 of the second guard 53B and overlaps the ceiling portion 60 of the second guard 53B in a plan view.

[0071] The inner circumference of the ceiling portion 60 of the first guard 53A corresponds to the upper end portion 53u of the first guard 53A. The inner circumference of the ceiling portion 60 of the second guard 53B corresponds to the upper end portion of the second guard 53B. The upper end portion 53u of the first guard 53A and the upper end portion of the second guard 53B form a circular opening that surrounds the substrate W and the spin base 23 in a plan view. The inner diameter of the upper end portion 53u of the first guard 53A is smaller than the inner diameter of the upper end portion of the second guard 53B. The inner diameter of the upper end portion 53u of the first guard 53A may be equal to the inner diameter of the upper end portion of the second guard 53B. The inner diameters of the upper end portion 53u of the first guard 53A and the upper end portion of the second guard 53B are larger than the outer diameter of the spin base 23.

[0072] The cup 68 includes a cylindrical inner wall surrounding the spin chuck 21, a cylindrical outer wall surrounding the inner wall at a radial distance, and an annular bottom wall extending from the lower end of the inner wall to the lower end of the outer wall. The inner wall, outer wall, and bottom wall form an annular liquid receiving groove that opens upward. The processing liquid received by the guard 53 flows down into the liquid receiving groove. The drain port for discharging the processing liquid from the cup 68 opens on the upper surface of the bottom wall.

[0073] The first guard 53A and the second guard 53B are movable vertically relative to the partition wall 13 of the chamber 12. The first cup 68A is integrated with the second guard 53B and moves vertically together with the second guard 53B. The first cup 68A is a separate component from the second guard 53B and may be fixed to the partition wall 13. The second cup 68B is fixed to the partition wall 13. The bottom wall of the second cup 68B is raised above the floor surface of the chamber 12 (the floor surface of the partition wall 13; the same applies hereinafter). The bottom wall of the first cup 68A is also raised above the floor surface of the chamber 12.

[0074] As shown in Figure 2A, the multiple guards 53 are connected to a guard lifting unit 51 that individually raises and lowers the multiple guards 53 in the vertical direction. The guard lifting unit 51 positions the guards 53 at any position within the range from the upper position to the lower position. Figure 2A shows the state in which the first guard 53A and the second guard 53B are positioned in the lower position. The upper position is the position in which the upper end of the guard 53 is positioned above the position in which the substrate W is held by the spin chuck 21. The lower position is the position in which the upper end of the guard 53 is positioned below the position in which the substrate W is held by the spin chuck 21. The position in which the substrate W is held by the spin chuck 21 is the position in which the substrate W held by the spin chuck 21 is positioned.

[0075] When supplying processing liquid to a rotating substrate W, the control device 3 (see Figure 1A) controls the guard lifting unit 51 to position at least one guard 53 in the upper position. In this state, when processing liquid is supplied to the substrate W, the processing liquid is swept away from the substrate W. The swept-away processing liquid collides with the inner surface of the guard 53 that is horizontally opposed to the substrate W and is guided into the cup 68 corresponding to this guard 53. As a result, the processing liquid discharged from the substrate W is collected in the cup 68.

[0076] The processing cup 52 includes multiple guards 53 and multiple cups 68, as well as a cylindrical outer wall 70 that surrounds all the guards 53 and all the cups 68. The cylindrical outer wall 70 surrounds the first guard 53A, which is the outermost of all the guards 53, at radial intervals. The cylindrical outer wall 70 extends upward from the floor of the chamber 12. The upper end of the cylindrical outer wall 70 is positioned above the electric motor 25 of the spin chuck 21. The upper end of the cylindrical outer wall 70 is positioned below the substrate W.

[0077] The processing unit 2 includes a partition plate 80 that divides the space around the first guard 53A within the chamber 12 vertically. The partition plate 80 surrounds the first guard 53A. The partition plate 80 is positioned above the cylindrical outer wall 70. The partition plate 80 rests on the cylindrical outer wall 70 and is supported by the cylindrical outer wall 70. The partition plate 80 is positioned below the substrate W. The outer edge of the partition plate 80 is horizontally separated from the inner surface of the chamber 12 and faces the inner surface of the chamber 12 horizontally.

[0078] The exhaust duct 78 is inserted into a discharge hole 72 that penetrates the cylindrical outer wall 70 radially. The upstream end 78u of the exhaust duct 78 is located inside the cylindrical outer wall 70. The upstream end 78u of the exhaust duct 78 is located below the substrate W. The upstream end 78u of the exhaust duct 78 is located below the partition plate 80. The exhaust duct 78 is connected to an exhaust system provided in the factory where the substrate processing apparatus 1 is installed. The upstream end 78u of the exhaust duct 78 forms an exhaust port for drawing in gas from inside the chamber 12.

[0079] Gas in the space above the processing cup 52 within the chamber 12 is drawn into the inside of the cylindrical outer wall 70 by the suction force transmitted through the exhaust duct 78. Gas that flows into the space around the cylindrical outer wall 70 through the gap between the outer edge of the partition plate 80 and the inner surface of the chamber 12 is drawn into the inside of the cylindrical outer wall 70 through the exhaust relay hole 73 that penetrates the cylindrical outer wall 70 radially. Gas inside the cylindrical outer wall 70 is drawn into the exhaust duct 78. As a result, the gas in the chamber 12 is discharged through the exhaust duct 78.

[0080] Next, the electrical configuration of the substrate processing device 1 will be described.

[0081] Figure 3 is a block diagram showing the electrical configuration of the substrate processing apparatus 1. The control device 3 is a computer that includes a computer main unit 3a and peripheral devices 3d connected to the computer main unit 3a. The computer main unit 3a includes a CPU 3b (central processing unit) that executes various instructions and a memory 3c that stores information. The peripheral devices 3d include a storage device 3e that stores information such as a program P, a reader 3f that reads information from removable media RM, and a communication device 3g that communicates with other devices such as a host computer.

[0082] The control device 3 is connected to an input device and a display device. The input device is operated when an operator, such as a user or maintenance personnel, inputs information into the substrate processing device 1. The information is displayed on the screen of the display device. The input device may be a keyboard, a pointing device, or a touch panel, or it may be a device other than these. A touch panel display that serves as both an input device and a display device may be provided on the substrate processing device 1.

[0083] The CPU 3b executes the program P stored in the storage 3e. The program P in the storage 3e may be pre-installed on the control unit 3, sent to the storage 3e from the removable media RM via the reader 3f, or sent to the storage 3e from an external device such as a host computer via the communication device 3g.

[0084] Storage 3e and removable media RM are non-volatile memories that retain data even without power. Storage 3e are magnetic storage devices such as hard disk drives. Removable media RM are optical discs such as compact discs or semiconductor memories such as memory cards. Removable media RM is an example of a computer-readable recording medium on which a program P is recorded. Removable media RM is a non-transitory tangible recording medium.

[0085] Storage 3e stores multiple recipes. A recipe is information that defines the processing content, processing conditions, and processing procedure for the substrate W. Multiple recipes differ from each other in at least one of the processing content, processing conditions, and processing procedure for the substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed according to the recipe specified by the host computer. The control device 3 is programmed to execute each of the processes described later.

[0086] For example, the control device 3 supplies these processing liquids to the top surface of the rotating substrate W in the order of SPM, pure water, SC1, and pure water, and then dries the substrate W by high-speed rotation of the substrate W. The types and order of processing liquids supplied to the substrate W are not limited to this. For example, the control device 3 may supply these processing liquids to the top surface of the substrate W in the order of SPM, hot water (pure water at a temperature higher than room temperature), and pure water (pure water at room temperature). Alternatively, the control device 3 may supply these processing liquids to the top surface of the substrate W in the order of SPM, pure water, DHF, pure water, SC1, and pure water, or in the order of DHF, pure water, SPM, pure water, SC1, and pure water.

[0087] In the above example, the control device 3 may replace the pure water on the substrate W with an organic solvent such as IPA, and then dry the substrate W to which the organic solvent is attached by high-speed rotation of the substrate W. In the above example, the control device 3 may supply ozonated water to the substrate W before supplying SPM, or after supplying SPM, in order to shorten the time for stripping the resist with SPM or to remove resist residue with ozonated water. In the former case, SPM is supplied to the upper surface of the substrate W covered with a liquid film of ozonated water. In the latter case, ozonated water is supplied to the upper surface of the substrate W covered with a liquid film of SPM.

[0088] Next, we will describe the three nozzles: the first chemical nozzle 31, the second chemical nozzle 32, and the first rinse solution nozzle 33.

[0089] In the following, the directions in which the first chemical nozzle 31 moves horizontally are defined as the right and left directions of the first chemical nozzle 31, the direction perpendicular to the right and left directions of the first chemical nozzle 31 and moving horizontally away from the first nozzle movement unit 38 is defined as the forward direction of the first chemical nozzle 31, and the direction opposite to the forward direction of the first chemical nozzle 31 is defined as the backward direction of the first chemical nozzle 31. The downward direction of the first chemical nozzle 31 is the same as the direction in which gravity acts.

[0090] Figure 4A is a schematic plan view of the three nozzles. Figure 4B is a schematic left side view of the three nozzles. Figure 4C is a schematic front view of the three nozzles. Figure 5A is a schematic cross-sectional view showing the vertical cross-section of the first chemical nozzle 31 along the VA-VA line shown in Figure 4C. Figure 5B is a schematic cross-sectional view showing the vertical cross-section of the first chemical nozzle 31 along the VB-VB line shown in Figure 5A.

[0091] As shown in Figures 4A, 4B, and 4C, all three nozzles are L-shaped. Each of the three nozzles includes a nozzle section 81 with an outlet for discharging a treatment liquid such as a chemical solution or pure water, and an arm section 82 that supports the nozzle section 81. The length of the first chemical solution nozzle 31 in the front-to-back direction is greater than the length of the first chemical solution nozzle 31 in the up-to-down direction. The same applies to the second chemical solution nozzle 32 and the first rinse solution nozzle 33.

[0092] As shown in Figure 4B, the first nozzle moving unit 38 includes a common arm 83 that supports each of the three nozzles, and a drive body 84 that moves the three nozzles integrally by moving the common arm 83. The common arm 83 protrudes horizontally from the drive body 84. The three nozzles protrude horizontally from the common arm 83. The drive body 84 is located outside the processing cup 52 (see Figure 2B). The drive body 84 extends vertically along a vertical axis of rotation A2. By rotating around the axis of rotation A2, the drive body 84 moves the common arm 83 horizontally, and by extending and retracting vertically, it moves the common arm 83 vertically.

[0093] The arm portion 82 extends horizontally from the common arm 83 to the corresponding nozzle portion 81. The nozzle portion 81 extends downward from the tip of the corresponding arm portion 82. For example, the arm portion 82 of the first chemical nozzle 31 extends horizontally from the common arm 83 to the nozzle portion 81 of the first chemical nozzle 31, and the nozzle portion 81 of the first chemical nozzle 31 extends downward from the tip of the arm portion 82 of the first chemical nozzle 31. The arm portion 82 may be bent diagonally or at a right angle upward or downward. The arm portion 82 may be bent diagonally or at a right angle to the right or left.

[0094] As shown in Figure 4A, the centerlines of the three arm portions 82 are separated horizontally and parallel to each other when viewed vertically. The arm portion 82 of the first rinse liquid nozzle 33 is positioned between the arm portion 82 of the first chemical nozzle 31 and the arm portion 82 of the second chemical nozzle 32. As shown in Figure 4C, the centerlines of the three nozzle portions 81 are separated horizontally and parallel to each other when viewed horizontally. The nozzle portion 81 of the first rinse liquid nozzle 33 is positioned between the nozzle portion 81 of the first chemical nozzle 31 and the nozzle portion 81 of the second chemical nozzle 32.

[0095] The lower ends of the three nozzles are positioned below the common arm 83. Figure 4C shows an example where the lower ends of the three nozzles are positioned at different heights. In this example, the lower end of the second chemical nozzle 32 is positioned below the lower ends of the first chemical nozzle 31 and the first rinse nozzle 33, while the lower end of the first rinse nozzle 33 is positioned above the lower ends of the first chemical nozzle 31 and the second chemical nozzle 32. The lower ends of the three nozzles may be positioned at the same height, or two of the lower ends of the three nozzles may be positioned at a different equal height from the remaining lower end of the three nozzles.

[0096] As shown in Figure 4C, the nozzle portion 81 of the first chemical nozzle 31 includes an upstream portion 87 extending downward from the arm portion 82 of the first chemical nozzle 31, and a downstream portion 88 extending downward from the upstream portion 87 and being narrower than the upstream portion 87. The nozzle portion 81 of the second chemical nozzle 32 includes a large-diameter portion extending downward from the arm portion 82 of the second chemical nozzle 32, a tapered portion that becomes narrower as it moves downward from the large-diameter portion, and a small-diameter portion extending downward from the tapered portion and being narrower than the large-diameter portion. The nozzle portion 81 of the first rinse liquid nozzle 33 also includes a large-diameter portion extending downward from the arm portion 82 of the first rinse liquid, a tapered portion that becomes narrower as it moves downward from the large-diameter portion, and a small-diameter portion extending downward from the tapered portion and being narrower than the large-diameter portion.

[0097] The chemical discharge port 95 of the first chemical nozzle 31 (see Figure 5B) opens on the outer circumferential surface 89 of the downstream portion 88 of the first chemical nozzle 31. The discharge port of the second chemical nozzle 32 opens on the lower surface of the small diameter portion of the second chemical nozzle 32. The discharge port of the first rinse liquid nozzle 33 opens on the lower surface of the small diameter portion of the first rinse liquid nozzle 33. The lower surface 90 of the downstream portion 88 of the first chemical nozzle 31 corresponds to the lower surface 90 and lower end of the first chemical nozzle 31. The lower surface of the small diameter portion of the second chemical nozzle 32 corresponds to the lower surface and lower end of the second chemical nozzle 32. The lower surface of the small diameter portion of the first rinse liquid nozzle 33 corresponds to the lower surface and lower end of the first rinse liquid nozzle 33.

[0098] The downstream portion 88 of the first chemical nozzle 31 is a vertical columnar shape extending downward from the lower surface of the upstream portion 87 of the first chemical nozzle 31. The downstream portion 88 includes a lower surface 90 which is a plane parallel to the upper surface of the substrate W, and a cylindrical outer surface 89 which extends vertically from the lower surface 90 to the lower surface of the upstream portion 87. Figure 4A shows an example in which the downstream portion 88 is cylindrical. In this example, the lower surface 90 of the downstream portion 88 is a horizontal circular plane, and the outer surface 89 of the downstream portion 88 is a vertical cylinder.

[0099] As shown in Figures 5A and 5B, the first chemical nozzle 31 includes a sulfuric acid inlet 91 into which sulfuric acid before mixing with hydrogen peroxide flows, a hydrogen peroxide inlet 92 into which sulfuric acid before mixing with sulfuric acid flows, and an internal space 93 into which the sulfuric acid flowing into the sulfuric acid inlet 91 and the hydrogen peroxide flowing into the hydrogen peroxide inlet 92 mix. The first chemical nozzle 31 further includes a chemical discharge port 95 for discharging SPM generated in the internal space 93, and a tip channel 94 for guiding SPM from the internal space 93 to the chemical discharge port 95.

[0100] The sulfuric acid inlet 91, the hydrogen peroxide inlet 92, and the chemical discharge port 95 open on the outer surface of the first chemical nozzle 31. In the example shown in Figures 5A and 5B, the sulfuric acid inlet 91 and the hydrogen peroxide inlet 92 open on the outer surface of the upstream section 87, and the chemical discharge port 95 opens on the outer surface of the downstream section 88. The internal space of the downstream section 88 extends downward from the internal space of the upstream section 87. The internal spaces of the upstream section 87 and the downstream section 88 correspond to the internal space 93 of the first chemical nozzle 31. The cross-sectional area of ​​the internal space of the downstream section 88 along the horizontal plane is smaller than the cross-sectional area of ​​the internal space of the upstream section 87 along the horizontal plane.

[0101] As shown in Figure 5A, the arm portion 82 of the first chemical nozzle 31 is cylindrical and extends to the nozzle portion 81 of the first chemical nozzle 31. The sulfuric acid pipe 34p and the hydrogen peroxide pipe 35p are inserted into the arm portion 82 of the first chemical nozzle 31. Parts of the sulfuric acid pipe 34p and parts of the hydrogen peroxide pipe 35p are located within the arm portion 82 of the first chemical nozzle 31. The sulfuric acid pipe 34p and the hydrogen peroxide pipe 35p are connected to the nozzle portion 81 of the first chemical nozzle 31. The sulfuric acid pipe 34p does not necessarily have to be inserted into the arm portion 82 of the first chemical nozzle 31. The same applies to the hydrogen peroxide pipe 35p.

[0102] The tip channel 94 guides the SPM from the internal space 93 of the first chemical nozzle 31 to the chemical discharge port 95. The tip channel 94 extends diagonally upward from the chemical discharge port 95 toward the internal space 93 of the first chemical nozzle 31. Therefore, the first chemical nozzle 31 does not discharge the SPM straight down from the chemical discharge port 95, but rather discharges the SPM from the chemical discharge port 95 in a chemical discharge direction D1 (see Figure 5B) that is inclined with respect to the horizontal plane. The inclination angle of the chemical discharge direction D1 with respect to the horizontal plane corresponds to the inclination angle of the center line of the tip channel 94 with respect to the horizontal plane.

[0103] The chemical discharge port 95 is a circular or elliptical opening that opens on the outer surface of the first chemical nozzle 31. The chemical discharge port 95 opens on the outer peripheral surface 89 of the downstream section 88, not on the lower surface 90 of the downstream section 88. The chemical discharge port 95 is directed to the left of the first chemical nozzle 31 (the right direction in Figure 5B is the left direction of the first chemical nozzle 31). The first chemical nozzle 31 moves horizontally in the left-right direction. Therefore, the chemical discharge port 95 discharges SPM in a chemical discharge direction D1 that is parallel or nearly parallel to the direction in which the first chemical nozzle 31 moves horizontally in a plan view.

[0104] Next, I will explain the splash shield 101.

[0105] In the following, the horizontal direction parallel to the liquid dispensing direction D1 in a plan view and having the same orientation in a plan view is defined as the rear direction of the droplet shield 101, the direction opposite to the rear direction of the droplet shield 101 is defined as the front direction of the droplet shield 101, and the horizontal directions perpendicular to the liquid dispensing direction D1 in a plan view are defined as the right and left directions of the droplet shield 101. The downward direction of the droplet shield 101 is the same as the direction in which gravity acts. The front direction of the droplet shield 101 coincides with the right direction of the first liquid nozzle 31, and the rear direction of the droplet shield 101 coincides with the left direction of the first liquid nozzle 31.

[0106] Figure 6 is a schematic diagram of the first chemical nozzle 31 and the splash shield 101 as viewed from the left side of the splash shield 101. Figure 7 is an enlarged view of a part of Figure 6. Figures 8 to 11 are schematic diagrams of the first chemical nozzle 31 and the splash shield 101 as viewed from the rear, front, top, and bottom sides of the splash shield 101, respectively.

[0107] In Figures 6 to 11, arrows U, F, R, and L indicate the upward, forward, rightward, and leftward directions of the splash shield 101, respectively. The same applies to the other figures. In Figure 11, the liquid dispensing port 95 is shown with a thick line.

[0108] As shown in Figure 6, the first chemical nozzle 31 is a nozzle with a splash shield 101 that catches splashes of chemical solution scattered upward from the substrate W. The splash shield 101 is a fender-like splash guard that prevents the diffusion of chemical solution splashes. The splash shield 101 is positioned to the side of the first chemical nozzle 31. The splash shield 101 is L-shaped. The splash shield 101 includes a support arm 102 that extends vertically to the side of the first chemical nozzle 31 and a shield plate 103 that extends laterally from the lower end of the support arm 102 away from the first chemical nozzle 31. The shield plate 103 is supported by the support arm 102.

[0109] The droplet shield 101 is attached to the first chemical nozzle 31. The droplet shield 101 moves together with the first chemical nozzle 31. Even if the first chemical nozzle 31 moves, the position of the droplet shield 101 relative to the first chemical nozzle 31 does not change. In other words, the first chemical nozzle 31 and the droplet shield 101 move within the chamber 12 while their relative positions remain fixed. When the first chemical nozzle 31 discharges SPM toward the upper surface of the substrate W, the first chemical nozzle 31 and the droplet shield 101 are positioned above the substrate W. In plan view, the droplet shield 101 is smaller than the substrate W (see Figure 12).

[0110] As shown in Figure 6, when the first chemical nozzle 31 discharges SPM toward the upper surface of the substrate W, the lower surface 90 of the first chemical nozzle 31 and the lower surface 104 of the shield plate 103 directly face the upper surface of the substrate W. The lower surface 104 of the shield plate 103 is a shield surface 104 that directly faces the upper surface of the substrate W. Hereinafter, "the lower surface 104 of the shield plate 103" may be referred to as "the shield surface 104" or "the lower surface 104 of the droplet shield 101".

[0111] All portions of the shield surface 104 of the splash shield 101 directly face the upper surface of the substrate W. The first chemical nozzle 31 discharges the chemical at an angle toward the target position P1 on the upper surface of the substrate W. The shield surface 104 is separated above the upper surface of the substrate W and, in a plan view, overlaps only a portion of the upper surface of the substrate W that includes the target position P1 (see Figure 10). Splashes of SPM scattered upward from the target position P1 are received by the shield surface 104.

[0112] The splash shield 101 is positioned to the left of the first chemical nozzle 31 (the right side of Figure 6 is the left side of the first chemical nozzle 31). The splash shield 101 is positioned on the opposite side of the first rinse nozzle 33 from the first chemical nozzle 31 (see Figure 2B). When the first chemical nozzle 31 is in the standby position, the splash shield 101 is positioned on the spin chuck 21 side of the first chemical nozzle 31 (see Figure 2B).

[0113] As shown in Figure 6, the splash shield 101 is a single, integrated component. The shield plate 103 is integrated with the support arm 102. The splash shield 101 may also consist of multiple components fixed to each other. The splash shield 101 is in contact with the nozzle portion 81 of the first chemical nozzle 31 and is fixed to the nozzle portion 81 of the first chemical nozzle 31. The splash shield 101 may also be in contact with the arm portion 82 of the first chemical nozzle 31 and fixed to the arm portion 82 of the first chemical nozzle 31. Alternatively, part or all of the splash shield 101 may be integrated with the first chemical nozzle 31.

[0114] The support arm 102 is superimposed on the side of the upstream section 87 of the first chemical nozzle 31. The support arm 102 is fixed to the upstream section 87, for example, by bolts. The support arm 102 extends downward from the upstream section 87. The lower end of the support arm 102 is positioned below the lower end of the upstream section 87 and above the lower end of the downstream section 88. The shield plate 103 extends from the support arm 102 in the opposite direction from the first chemical nozzle 31. The shield plate 103 and the support arm 102 do not contact the downstream section 88 and are horizontally separated from the downstream section 88.

[0115] The support arm 102 is, for example, a vertical plate. The front surface 102f and rear surface 102r of the support arm 102 are parallel or nearly parallel to each other. Both the front surface 102f and rear surface 102r of the support arm 102 are a single vertical rectangular plane. The front surface 102f of the support arm 102 may be two or more planes, or may include both a plane and a curved surface. The front surface 102f of the support arm 102 may have a shape other than a rectangle. The same applies to the rear surface 102r of the support arm 102.

[0116] The front surface 102f of the support arm 102 is superimposed on the side surface of the upstream section 87. The front surface 102f of the support arm 102 extends downward from the upstream section 87. The lower end of the front surface 102f of the support arm 102 is positioned below the lower end of the upstream section 87 and above the lower end of the downstream section 88. The front surface 102f of the support arm 102 does not contact the downstream section 88 and is horizontally separated from it. The shortest horizontal distance from the downstream section 88 to the front surface 102f of the support arm 102 may be constant from the upper end of the downstream section 88 to the lower end of the front surface 102f of the support arm 102, or it may decrease gradually or continuously as it approaches the liquid discharge port 95.

[0117] As shown in Figure 6, the upper surface 103u of the shield plate 103 extends from the rear surface 102r of the support arm 102 in the direction opposite to the first chemical nozzle 31. The lower surface 104 of the shield plate 103, which corresponds to the shield surface 104, extends from the front surface 102f of the support arm 102 in the direction opposite to the first chemical nozzle 31. The upper surface 103u and the lower surface 104 of the shield plate 103 are parallel or nearly parallel to each other. The upper surface 103u and the lower surface 104 of the shield plate 103 are positioned below the lower end of the upstream section 87.

[0118] As shown in Figures 8 and 9, the width of the support arm 102 (the length of the splash shield 101 in the left-right direction) is constant or nearly constant from the upper end of the support arm 102 to the vicinity of the shield plate 103, and increases as it approaches the shield plate 103. The width of the support arm 102 may also be constant from the upper end of the support arm 102 to the lower end of the support arm 102.

[0119] As shown in Figure 10, the width of the shield plate 103 (the length of the splash shield 101 in the left-right direction) is constant or approximately constant from the front end to the rear end of the shield plate 103. The width of the shield plate 103 is equal to or approximately equal to the maximum width of the support arm 102. The depth of the shield plate 103 (the length of the splash shield 101 in the front-rear direction) is constant or approximately constant from the right end to the left end of the shield plate 103. The width of the shield plate 103 may be equal to the depth of the shield plate 103, or it may be greater than or less than the depth of the shield plate 103. The width and depth of the shield plate 103 may not be constant and may vary.

[0120] As shown in Figure 6, the shield surface 104 is a single plane inclined at a constant angle with respect to the horizontal plane such that it approaches the upper surface of the substrate W as it moves away from the chemical discharge port 95 in the front-to-back direction of the splash shield 101. In other words, the vertical distance from the upper surface of the substrate W to the shield surface 104 decreases continuously at a constant rate as it moves away from the chemical discharge port 95 in the front-to-back direction of the splash shield 101.

[0121] On the other hand, if the distance from the liquid discharge port 95 to the splash shield 101 in the front-rear direction remains constant, the vertical distance from the top surface of the substrate W to the shield surface 104 is constant from the right edge of the shield surface 104 to the left edge of the shield surface 104. Therefore, as shown in Figure 9, the front edge 104f (front side) of the shield surface 104 is horizontal, and the rear edge 104r (rear side) of the shield surface 104 is also horizontal.

[0122] The inclination angle θ2 of the shield surface 104 with respect to the horizontal plane (see Figure 7) may be equal to the inclination angle θ1 of the chemical discharge direction D1 with respect to the horizontal plane (see Figure 7), or it may be greater than or less than the inclination angle θ1 of the chemical discharge direction D1 with respect to the horizontal plane. The inclination angle θ1 of the chemical discharge direction D1 with respect to the horizontal plane is, for example, 10 to 45 degrees. The inclination angle θ2 of the shield surface 104 with respect to the horizontal plane is, for example, 10 to 45 degrees.

[0123] The shield surface 104 may be horizontal. That is, the vertical distance from the top surface of the substrate W to the shield surface 104 may be constant from the front end 104f of the shield surface 104 to the rear end 104r of the shield surface 104, and also constant from the right end to the left end of the shield surface 104. Alternatively, the vertical distance from the top surface of the substrate W to the shield surface 104 may change continuously or in steps as the splash shield 101 approaches the rear end 104r of the shield surface 104 in the front-to-back direction. Similarly, the vertical distance from the top surface of the substrate W to the shield surface 104 may change continuously or in steps as the splash shield 101 approaches the left end of the shield surface 104 in the left-to-right direction.

[0124] As shown in Figure 7, the front end 104f of the shield surface 104 is positioned above the rear end 104r of the shield surface 104. The front end 104f of the shield surface 104 corresponds to the upper end of the shield surface 104, and the rear end 104r of the shield surface 104 corresponds to the lower end of the shield surface 104. The vertical distance DS1 (height difference) from the front end 104f of the shield surface 104 to the rear end 104r of the shield surface 104 is greater than the radius of the lower surface 90 of the first chemical nozzle 31 and shorter than the depth DP1 (see Figure 11) of the shield surface 104. The distance DS1 may also be greater than the vertical distance from the upper surface of the substrate W to the rear end 104r of the shield surface 104.

[0125] The front end 104f of the shield surface 104 is the part of the shield surface 104 closest to the chemical discharge port 95. The front end 104f of the shield surface 104 is positioned above the lower end 95L of the chemical discharge port 95. The front end 104f of the shield surface 104 may be positioned at the same height as the upper end 95u of the chemical discharge port 95, or it may be positioned above or below the upper end 95u of the chemical discharge port 95. The rear end 104r of the shield surface 104 is positioned below the upper end 95u of the chemical discharge port 95. The rear end 104r of the shield surface 104 may be positioned at the same height as the lower end 95L of the chemical discharge port 95, or it may be positioned above or below the lower end 95L of the chemical discharge port 95.

[0126] If the rear end 104r of the shield surface 104 is positioned below the lower end 95L of the chemical discharge port 95, the rear end 104r of the shield surface 104 may be positioned at the same height as the lower surface 90 of the first chemical nozzle 31, or it may be positioned below the lower end of the first chemical nozzle 31, as long as it does not come into contact with the upper surface of the substrate W. By bringing the rear end 104r of the shield surface 104, which corresponds to the lower end of the shield surface 104, closer to the upper surface of the substrate W, the SPM droplets scattered upward from the substrate W can be efficiently received by the shield surface 104.

[0127] As shown in Figure 11, when the shield surface 104, i.e., the lower surface 104 of the shield plate 103, is viewed from below, the shield surface 104 is a single plane in the shape of a rectangle or square. The shield surface 104 may be a single curved surface, or it may include both a plane and a curved surface. The shield surface 104 may also have a shape other than a rectangle or square, such as a sector or trapezoid. The shield surface 104 is smaller than the substrate W in plan view (see Figure 12). In other words, the area of ​​the shield surface 104 in plan view is smaller than the area of ​​the substrate W in plan view.

[0128] The depth DP1 of the shield surface 104 (length in the front-to-back direction of the splash shield 101) may be constant from the right end to the left end of the shield surface 104, or it may change continuously or in stages. Similarly, the width WD1 of the shield surface 104 (length in the left-to-right direction of the splash shield 101) may be constant from the front end 104f to the rear end 104r of the shield surface 104, or it may change continuously or in stages. The depth DP1 of the shield surface 104 may be equal to the width WD1 of the shield surface 104, or it may be greater than or less than the width WD1 of the shield surface 104.

[0129] The depth DP1 and width WD1 of the shield surface 104 are each greater than the diameter of the lower surface 90 of the first chemical nozzle 31. The depth DP1 and width WD1 of the shield surface 104 are each less than the radius of the substrate W. The depth DP1 and width WD1 of the shield surface 104 are each less than the vertical distance DS2 (see Figure 6) from the upper end to the lower end of the splash shield 101. The depth DP1 and width WD1 of the shield surface 104 are each less than the vertical distance DS3 (see Figure 6) from the upper end to the lower end of the nozzle portion 81 of the first chemical nozzle 31.

[0130] As shown in Figure 11, when viewing the first chemical nozzle 31 and the droplet shield 101 from below, all portions of the lower surface 90 of the first chemical nozzle 31 are located outside the outer edge 104o of the shield surface 104 and are horizontally separated from the shield surface 104. When viewing the first chemical nozzle 31 from below, all portions of the chemical outlet 95 are located on the outer edge of the lower surface 90 of the first chemical nozzle 31. Therefore, when viewing the first chemical nozzle 31 and the droplet shield 101 from below, all portions of the chemical outlet 95 are located outside the outer edge 104o of the shield surface 104 and are horizontally separated from the shield surface 104.

[0131] When the first chemical nozzle 31 and the droplet shield 101 are viewed from below, the shortest distance DS4 (see Figure 11) from the chemical outlet 95 to the outer edge 104o of the shield surface 104 is shorter than the depth DP1 of the shield surface 104. In the example shown in Figure 11, the shortest distance from the chemical outlet 95 to the front end 104f (upper end) of the shield surface 104 is shorter than the depth DP1 of the shield surface 104. Therefore, the shield surface 104 is positioned close to the chemical outlet 95, and the shield surface 104 is long in the front-to-back direction of the droplet shield 101. The depth DP1 of the shield surface 104 may be less than or equal to the shortest distance DS4.

[0132] The liquid discharged from the nozzle towards the upper surface of the substrate W collides with the upper surface of the substrate W or the liquid on the substrate W at or near the target position P1 on the upper surface of the substrate W. At this time, splashing occurs on the substrate W, and liquid droplets (droplets, mist, vapor, etc.) are scattered upward from the substrate W. In addition, liquid droplets are also generated that are scattered radially from the nozzle. When such liquid droplets adhere to the components in the chamber 12 (see Figure 2A) and dry, they may change into particles that contaminate the substrate W.

[0133] When two chemically reactive liquids are mixed immediately before discharge, the chemical reaction between the two liquids may generate liquid droplets, which may scatter from the discharge port and the upper surface of the substrate W. When a liquid exceeding 100°C and a liquid below 100°C containing water are mixed immediately before discharge, rapid boiling of the water may cause liquid droplets to scatter from the discharge port and the upper surface of the substrate W.

[0134] In particular, when two liquids that undergo an exothermic reaction are a liquid above 100°C and a liquid below 100°C containing water, the water in these two liquids is heated even more rapidly, increasing the number of droplets and the force with which they scatter. An example of such two liquids is sulfuric acid above 100°C and hydrogen peroxide below 100°C. When sulfuric acid and hydrogen peroxide are mixed, high-temperature SPM is generated due to the dilution heat of sulfuric acid.

[0135] As shown in Figure 6, when supplying SPM to the upper surface of the substrate W, the control device 3 (see Figure 1A) discharges SPM from the first chemical nozzle 31 toward a target position P1 on the upper surface of the substrate W, with the lower surface 90 of the first chemical nozzle 31 and the shield surface 104 close to the upper surface of the substrate W. The vertical distance DS5 from the upper surface of the substrate W to the lower surface 90 of the first chemical nozzle 31 is shorter than the depth DP1 of the shield surface 104. The horizontal distance DS6 from the chemical discharge port 95 to the target position P1 is shorter than the depth DP1 of the shield surface 104.

[0136] The first chemical nozzle 31 discharges SPM at an angle to the upper surface of the substrate W, rather than perpendicularly to the upper surface of the substrate W. This narrows the range over which SPM droplets scatter upward. Furthermore, the target position P1 on the upper surface of the substrate W is covered by the shield surface 104. SPM droplets scattered upward from the chemical discharge port 95 and SPM droplets scattered upward from the substrate W collide with the shield surface 104. This narrows the range over which SPM droplets scatter, and reduces the number of SPM droplets adhering to components in the chamber 12 other than the first chemical nozzle 31 and the droplet shield 101 (for example, the lower surface of the rectifier plate 18 shown in Figure 2A).

[0137] Next, we will explain the mist generator 105.

[0138] As shown in Figure 10, the substrate processing apparatus 1 is equipped with a mist generator 105 that generates a mist of cleaning solution. Figure 10 shows an example in which the mist generator 105 includes an ultrasonic transducer 106. The ultrasonic transducer 106 is attached to the nozzle portion 81 of the first chemical solution nozzle 31. The ultrasonic transducer 106 may also be attached to the arm portion 82 of the first chemical solution nozzle 31 or to the splash shield 101. The ultrasonic transducer 106 may be attached to two or more of the nozzle portion 81 of the first chemical solution nozzle 31, the arm portion 82 of the first chemical solution nozzle 31, and the splash shield 101. When the first nozzle moving unit 38 moves the first chemical solution nozzle 31 horizontally, the first chemical solution nozzle 31 and the mist generator 105 move horizontally while maintaining a constant relative position between them.

[0139] The mist generator 105 includes a liquid tank 107 for storing the cleaning solution, which is the source of the mist. Figure 10 shows an example in which the liquid tank 107 is a recess that is recessed downward from the upper surface of the upstream portion 87 of the first chemical nozzle 31. The liquid tank 107 opens at the upper surface of the upstream portion 87 of the first chemical nozzle 31. The liquid tank 107 includes a cylindrical inner surface that surrounds the cleaning solution inside the liquid tank 107 and a bottom surface that closes the bottom of the inner surface of the liquid tank 107. The liquid tank 107 may be integrated with the nozzle portion 81 of the first chemical nozzle 31, or it may be a separate component fixed to the nozzle portion 81 of the first chemical nozzle 31.

[0140] Figure 10 shows an example in which the ultrasonic transducer 106 is placed inside the liquid tank 107. The ultrasonic transducer 106 may be placed outside the liquid tank 107 if mist can be generated from the cleaning liquid inside the liquid tank 107. The ultrasonic transducer 106 is placed on the bottom surface of the liquid tank 107. In the example shown in Figure 10, the ultrasonic transducer 106 is a horizontal disc shape, and the inner surface of the liquid tank 107 concentrically surrounds the outer surface of the ultrasonic transducer 106. The upper end of the ultrasonic transducer 106 may be placed at the same height as the upper surface of the upstream portion 87 of the first chemical nozzle 31, or it may be placed above or below the upper surface of the upstream portion 87 of the first chemical nozzle 31.

[0141] The ultrasonic transducer 106 may be a piezoelectric element that vibrates in response to a change in voltage, a magnetostrictive vibrator that vibrates in response to a change in a magnetic field, or any other type of transducer. The oscillator that vibrates the ultrasonic transducer 106 is electrically connected to the ultrasonic transducer 106 via wiring. Part or all of the ultrasonic transducer 106 is immersed in the cleaning solution in the liquid tank 107. When the ultrasonic transducer 106 starts to vibrate, part of the cleaning solution in the liquid tank 107 turns into a mist, and the mist of the cleaning solution flows upward from the liquid surface in the liquid tank 107.

[0142] In addition to the ultrasonic transducer 106 and the liquid tank 107, the mist generator 105 includes a cleaning fluid pipe 108p that guides the cleaning fluid to be supplied to the liquid tank 107, and a cleaning fluid valve 108v that switches between an open state in which cleaning fluid is supplied from the cleaning fluid pipe 108p to the liquid tank 107 and a closed state in which the supply of cleaning fluid from the cleaning fluid pipe 108p to the liquid tank 107 is stopped. The cleaning fluid pipe 108p is attached to the first chemical nozzle 31. The cleaning fluid pipe 108p moves together with the first chemical nozzle 31. When the cleaning fluid valve 108v is opened, the cleaning fluid in the cleaning fluid pipe 108p is supplied to the liquid tank 107.

[0143] The cleaning solution in the liquid tank 107 is pure water. The mist generator 105 generates a mist of pure water, that is, an aggregate of pure water particles. The cleaning solution may be a liquid other than pure water. For example, the cleaning solution may be a liquid containing at least one of the following: carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, hydrochloric acid water at a dilution concentration (e.g., about 10 to 100 ppm), and ammonia water at a dilution concentration (e.g., about 10 to 100 ppm), or it may be any other liquid. When the chemical solution discharged from the first chemical solution nozzle 31 is acidic, the cleaning solution is preferably neutral or acidic, and when the chemical solution discharged from the first chemical solution nozzle 31 is alkaline, the cleaning solution is preferably neutral or alkaline.

[0144] The mist generator 105 may be a generator other than an ultrasonic type. The mist generator 105 may be equipped with a heater that heats the cleaning liquid in the liquid tank 107 to evaporate the cleaning liquid in the liquid tank 107, in place of or in addition to the ultrasonic transducer 106. The mist generator 105 may be equipped with a mist nozzle that sprays mist, in place of or in addition to the ultrasonic transducer 106. The mist nozzle may be an externally mixed or internally mixed two-fluid nozzle that generates mist by colliding gas and liquid, or a spray nozzle that generates mist by spraying compressed liquid from an orifice or by utilizing the Venturi effect. However, the ultrasonic transducer 106 is superior to a heater in that it can generate mist in a shorter time, and superior to a mist nozzle in that it can generate finer mist with a relatively simple configuration.

[0145] Next, the operation of the first chemical nozzle 31 and the splash shield 101 on the substrate W will be described.

[0146] Figure 12 is a schematic diagram showing the positions of the first chemical nozzle 31 and the splash shield 101 relative to the substrate W. Figure 13 is a schematic diagram showing the position of the splash shield 101 relative to the first guard 53A when the first chemical nozzle 31 is discharging the chemical solution toward the outer periphery of the upper surface of the substrate W. Figure 14 is a schematic diagram to illustrate the contact between an atmosphere containing chemical solution particles and a mist of pure water containing pure water particles.

[0147] When supplying SPM to the upper surface of the substrate W, the control device 3 (see Figure 1A) rotates the substrate W on the spin chuck 21 with at least one guard 53 in the upper position, and discharges SPM from the first chemical nozzle 31 toward the upper surface of the substrate W. At this time, the control device 3 may keep the first chemical nozzle 31 and the splash shield 101 stationary so that the collision position where the SPM discharged from the first chemical nozzle 31 collides with the upper surface of the substrate W remains in the center of the upper surface of the substrate W, or it may move the first chemical nozzle 31 and the splash shield 101 horizontally so that the collision position moves within the upper surface of the substrate W in the radial direction of the substrate W (in a direction perpendicular to the rotation axis A1 of the substrate W).

[0148] When discharging SPM from the first chemical nozzle 31 and moving the first chemical nozzle 31 and the droplet shield 101 horizontally, the control device 3 may move the first chemical nozzle 31 and the droplet shield 101 horizontally between a center processing position where the SPM discharged from the first chemical nozzle 31 collides with the center of the upper surface of the substrate W and an edge processing position where the SPM discharged from the first chemical nozzle 31 collides with the outer periphery of the upper surface of the substrate W (half scan). Alternatively, the control device 3 may move the first chemical nozzle 31 and the droplet shield 101 horizontally between two edge processing positions where the SPM discharged from the first chemical nozzle 31 collides with the outer periphery of the upper surface of the substrate W (full scan).

[0149] Figure 12 shows an example in which the first chemical nozzle 31 and the droplet shield 101 move horizontally between two edge processing positions. In this example, the control device 3 controls the first nozzle moving unit 38 to move the first chemical nozzle 31 and the droplet shield 101 horizontally between the outer edge position (indicated by the dashed-dotted line) and the inner edge position (indicated by the dashed-dotted line).

[0150] The "outer edge position" is a position where the first chemical nozzle 31 is positioned on the opposite side of the rotation axis A1 of the substrate W from the second chemical nozzle 32, and the collision position of the SPM with respect to the upper surface of the substrate W is brought closer to the outer edge of the substrate W, so that the splash shield 101 overlaps with the first guard 53A, which is located in the upper position, in a plan view.

[0151] The "inner edge position" is a position where the second chemical nozzle 32 is positioned on the opposite side of the rotation axis A1 of the substrate W from the first chemical nozzle 31, and the collision position of the SPM with the upper surface of the substrate W is brought closer to the outer circumference of the substrate W, within the range where the second chemical nozzle 32 does not come into contact with the first guard 53A located in the upper position.

[0152] As shown in Figure 13, when the first chemical nozzle 31 is positioned at the outer edge, the shield plate 103 of the splash shield 101 is positioned below the ceiling portion 60 of the first guard 53A, which is positioned above, and overlaps with the ceiling portion 60 in a plan view. At this time, the support arm 102 and the shield plate 103 are separated from the first guard 53A, which is positioned above, and do not come into contact with the first guard 53A. The upper end portion 53u of the first guard 53A, which is positioned above, is positioned above any portion of the shield plate 103 and overlaps with the splash shield 101, which is positioned at the outer edge, in a plan view.

[0153] The outer edge position is located further outward than the inner edge position with respect to the radial direction of the substrate W. In other words, the shortest distance from the center of the substrate W to the SPM collision position when the first chemical nozzle 31 is positioned at the outer edge position is longer than the shortest distance from the center of the substrate W to the SPM collision position when the first chemical nozzle 31 is positioned at the inner edge position.

[0154] As shown in Figure 14, when the first chemical nozzle 31 discharges SPM, an example of a chemical solution, a chemical atmosphere containing chemical particles is generated near the first chemical nozzle 31. A chemical atmosphere is also generated near the first chemical nozzle 31 when SPM collides with the chuck pin 22 (see Figure 13) or the guard 53 (see Figure 13). Furthermore, since SPM at a temperature of 100°C or higher is discharged from the first chemical nozzle 31, droplets and mist of SPM are violently ejected from the first chemical nozzle 31 due to the evaporation of water contained in the SPM. Because the ejection force is strong, droplets and mist of SPM ejected from the first chemical nozzle 31 may adhere to the lower surface of the rectifier plate 18 (see Figure 2A). Fumes may also be generated from the substrate W due to the reaction between SPM and the resist. Most of the chemical atmosphere is sent into the guard 53 by the downflow or the suction force of the exhaust equipment. However, some of the chemical atmosphere may diffuse into the lower space SL (see Figure 2A).

[0155] The control device 3 (see Figure 1A) starts generating mist in the mist generator 105, and then starts discharging SPM from the first chemical nozzle 31. The mist of pure water, which is an example of a cleaning solution, flows upward from the mist generator 105, and then flows towards the guard 53 due to the downflow and the suction force of the exhaust equipment. The chemical atmosphere floating near the first chemical nozzle 31 comes into contact with the pure water mist floating near the first chemical nozzle 31. As shown in Figure 14, this contact causes the chemical particles to combine with the pure water particles, forming larger and heavier liquid particles. As the weight of the particles increases, the chemical atmosphere becomes less likely to flow upward, and the range over which the chemical atmosphere diffuses narrows.

[0156] After the discharge of SPM from the first chemical nozzle 31 is stopped, the substrate W is still rotating and the liquid film of SPM covers the entire upper surface of the substrate W. Pure water is then discharged from the first rinse nozzle 33 (see Figure 2A) or the second rinse nozzle 45 (see Figure 2A). The control device 3 may stop the generation of mist in the mist generator 105 at the same time that the first chemical nozzle 31 stops discharging SPM, or it may stop the generation of mist in the mist generator 105 before or after the first chemical nozzle 31 stops discharging SPM.

[0157] The pure water discharged from the first rinse liquid nozzle 33 or the second rinse liquid nozzle 45 collides with the upper surface of the rotating substrate W and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water mist generated from the mist generator 105 remains above the substrate W for a certain period of time even after the mist generator 105 stops generating mist. As a result, the droplets of SPM generated when rinsing the SPM on the substrate W with pure water are captured by the pure water mist floating above the substrate W and then discharged outside the chamber 12 through the inside of the guard 53. This eliminates or reduces the chemical atmosphere that adheres to the substrate W or components placed near the substrate W after drying.

[0158] As described above, in the first embodiment, the chemical solution is discharged from the first chemical nozzle 31 toward the upper surface of the substrate W. When the first chemical nozzle 31 discharges the chemical solution, a chemical atmosphere such as chemical splashes and chemical mist is generated near the substrate W. In particular, when SPM (a mixture of sulfuric acid and hydrogen peroxide) at a temperature of 100°C or higher is discharged from the first chemical nozzle 31, droplets and mist of SPM are violently ejected from the first chemical nozzle 31 due to the evaporation of water contained in the SPM. In some cases, fumes (smoke-like gases) may be generated from the substrate W due to the reaction between the SPM and the resist.

[0159] The chemical atmosphere floating near the first chemical nozzle 31 comes into contact with the cleaning solution mist generated from the mist generator 105. This contact causes the chemical particles to combine with the cleaning solution particles, transforming them into larger and heavier liquid particles. As the weight of the particles increases, the chemical atmosphere becomes less likely to flow upward, and the area over which the chemical atmosphere diffuses narrows. In particular, since the cleaning solution mist comes into contact with the chemical atmosphere near the first chemical nozzle 31, which is the main source of the chemical atmosphere, the diffusion range of the chemical atmosphere can be effectively narrowed. As a result, the chemical atmosphere adhering to the substrate W after drying or to components placed near the substrate W can be eliminated or reduced, thereby reducing contamination of the substrate W and other components caused by the chemical atmosphere.

[0160] Furthermore, the first nozzle moving unit 38, which is an example of a nozzle actuator, moves not only the first chemical nozzle 31 but also the mist generator 105. The mist of the cleaning solution generated from the mist generator 105 follows the first chemical nozzle 31 that is discharging the chemical solution and lingers near the first chemical nozzle 31 even after it has moved. Therefore, it is not necessary to fill the chamber 12 containing the substrate W with cleaning solution mist, and the amount of cleaning solution consumed can be reduced compared to such a case. As a result, the diffusion range of the chemical atmosphere can be efficiently narrowed while reducing the energy required for processing the substrate W and the environmental burden.

[0161] In the first embodiment, instead of evaporating the cleaning solution in the liquid tank 107 with a heater or spraying the cleaning solution with a mist nozzle, the cleaning solution mist is generated by vibrating the cleaning solution in the liquid tank 107, which moves together with the first chemical nozzle 31, with an ultrasonic transducer 106. The ultrasonic transducer 106 is superior to a heater in that it can generate mist in a shorter time, and superior to a mist nozzle in that it can generate a finer mist with a relatively simple configuration. By making the cleaning solution particles smaller, the time that the cleaning solution mist remains suspended can be extended, allowing more of the chemical atmosphere to come into contact with the cleaning solution mist.

[0162] In the first embodiment, the liquid tank 107 is positioned above the first chemical nozzle 31 and overlaps the first chemical nozzle 31 in a plan view. Therefore, the cleaning solution mist can be generated at a higher position compared to when the liquid tank 107 is positioned around the first chemical nozzle 31. This extends the time until the cleaning solution mist comes into contact with the substrate W or the liquid on the substrate W, and extends the time the cleaning solution mist remains suspended in the air.

[0163] In the first embodiment, cleaning fluid is supplied from the cleaning fluid pipe 108p to the liquid tank 107. The cleaning fluid pipe 108p moves together with the first chemical nozzle 31. Therefore, it is not necessary to move the first chemical nozzle 31 to a specific position in order to supply cleaning fluid to the liquid tank 107, and cleaning fluid can be supplied to the liquid tank 107 at any position. Furthermore, by replenishing the cleaning fluid in the liquid tank 107 from the cleaning fluid pipe 108p, it is possible to increase the amount of mist generated per unit time, or the time for which mist can be generated, even if the capacity of the liquid tank 107 is small.

[0164] In the first embodiment, the shield surface 104 of the splash shield 101 is positioned directly opposite the upper surface of the substrate W. When the first chemical nozzle 31 discharges the chemical solution toward the upper surface of the substrate W, the chemical solution collides with the upper surface of the substrate W or the liquid on the substrate W, generating splashes of the chemical solution that scatter upward. These splashes can be caught by the shield surface 104 of the splash shield 101. Furthermore, since the splash shield 101 moves together with the first chemical nozzle 31, the splash shield 101 can catch splashes of the chemical solution that scatter upward from the substrate W regardless of the position of the first chemical nozzle 31.

[0165] Next, a second embodiment will be described.

[0166] In Figures 15 to 16 below, configurations equivalent to those shown in Figures 1A to 14 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0167] The main difference between the second embodiment and the first embodiment is that the mist generator 105 is attached to the droplet shield 101 instead of the first chemical nozzle 31.

[0168] Figure 15 is a schematic diagram of the first chemical nozzle 31 and splash shield 101 according to the second embodiment of the present invention, viewed horizontally. Figure 16 is a schematic diagram of the first chemical nozzle 31 and splash shield 101 according to the second embodiment of the present invention, viewed from above.

[0169] The liquid tank 107 of the mist generator 105 is located in the droplet shield 101, not in the first chemical nozzle 31. Figures 15 and 16 show an example where the liquid tank 107 is integrated with the droplet shield 101. The upper surface 103u of the shield plate 103 corresponds to the bottom surface of the liquid tank 107. The ultrasonic transducer 106 of the mist generator 105 is positioned on the bottom surface of the liquid tank 107.

[0170] The liquid tank 107 includes a U-shaped side wall 107s in plan view that extends upward from the shield plate 103. The support arm 102 is coupled to the side wall 107s. The rear surface 102r of the support arm 102 and the inner surface of the side wall 107s correspond to the inner circumferential surface of the liquid tank 107. The liquid is stored inside the side wall 107s. The height of the side wall 107s is set so that the side wall 107s does not come into contact with the first guard 53A, which is located in an upper position, when the first chemical nozzle 31 is positioned at the outer edge position (the position of the first chemical nozzle 31 shown by the dashed line in Figure 12).

[0171] In the second embodiment, in addition to the effects of the first embodiment, the following effects can be achieved. Specifically, in the second embodiment, mist is generated from the cleaning liquid in the liquid tank 107 by vibrating the cleaning liquid in the liquid tank 107 with the ultrasonic transducer 106. The liquid tank 107 is positioned above the splash shield 101 and overlaps the splash shield 101 in a plan view. In this case, it is easier to increase the volume of the liquid tank 107 compared to when the liquid tank 107 is positioned above the first chemical nozzle 31. That is, it is easier to increase both or either the depth of the liquid tank 107 and the area of ​​the liquid tank 107 in a plan view. As a result, more cleaning liquid can be held in the liquid tank 107.

[0172] Next, a third embodiment will be described.

[0173] In Figures 17 to 18 below, configurations equivalent to those shown in Figures 1A to 16 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0174] The main difference between the third embodiment and the first embodiment is that the first chemical nozzle 31 discharges the chemical solution perpendicular to the upper surface of the substrate W, and the splash shield 101 surrounds the entire circumference of the first chemical nozzle 31.

[0175] Figure 17 is a schematic cross-sectional view showing a vertical cross-section of the first chemical nozzle 31 and splash shield 101 according to the third embodiment of the present invention. Figure 18 is a schematic view of the first chemical nozzle 31 and splash shield 101 according to the third embodiment of the present invention, viewed from above.

[0176] The chemical discharge port 95 of the first chemical nozzle 31 opens on the lower surface 90 of the first chemical nozzle 31, not on the outer surface 89 of the first chemical nozzle 31. The first chemical nozzle 31 discharges the chemical vertically downward from the chemical discharge port 95 toward the target position P1 on the upper surface of the substrate W. The first chemical nozzle 31 may also discharge the chemical in an inclined direction relative to the upper surface of the substrate W from the chemical discharge port 95.

[0177] The support arm 102 of the splash shield 101 surrounds the entire circumference of the first chemical nozzle 31. The support arm 102 is fixed to the first chemical nozzle 31. The shield plate 103 of the splash shield 101 extends horizontally from the support arm 102. The shield plate 103 surrounds the entire circumference of the first chemical nozzle 31. The lower surface 104 of the shield plate 103, which corresponds to the shield surface 104, is positioned below the lower end of the support arm 102.

[0178] Figure 17 shows an example where the lower surface 104 of the shield plate 103 is horizontal from the outer peripheral surface 89 of the first chemical nozzle 31 to the outer edge 104o of the lower surface 104 of the shield plate 103. In this example, the entire lower surface 104 of the shield plate 103 is horizontal, and the lower surface 104 of the shield plate 103 is positioned above the lower surface 90 of the first chemical nozzle 31. The chemical discharge port 95 is positioned below the lower surface 104 of the shield plate 103.

[0179] The lower surface 104 of the shield plate 103 may be positioned at the same height as the lower surface 90 of the first chemical nozzle 31, or it may be positioned below the lower surface 90 of the first chemical nozzle 31. The lower surface 104 of the shield plate 103 may have a portion that is perpendicular or inclined with respect to the upper surface of the substrate W. The inner edge of the lower surface 104 of the shield plate 103 may surround the outer peripheral surface 89 of the first chemical nozzle 31 at a constant distance.

[0180] As shown in Figure 18, the shield plate 103 is a circle concentric with the first chemical nozzle 31 in a plan view. The shape of the shield plate 103 in a plan view may be other than a circle. The outer edge 104o of the lower surface 104 of the shield plate 103 surrounds the entire circumference of the first chemical nozzle 31 in a plan view. The area of ​​the shield plate 103 in a plan view is smaller than the area of ​​the substrate W in a plan view.

[0181] When the first chemical nozzle 31 discharges a chemical such as SPM vertically from the chemical discharge port 95 toward a target position P1 on the upper surface of the substrate W, chemical droplets are generated that scatter upward from the target position P1. These chemical droplets scatter radially in an upward direction at an angle from the target position P1. These chemical droplets are caught by the lower surface 104 of the shield plate 103, which corresponds to the shield surface 104. This narrows the area over which the chemical droplets diffuse.

[0182] Even if a chemical atmosphere containing chemical particles is generated above the droplet shield 101 or flows to the area above the droplet shield 101, this chemical atmosphere comes into contact with the cleaning solution mist floating near the first chemical nozzle 31. This makes it difficult for the chemical atmosphere to flow upward, narrowing the area over which the chemical atmosphere diffuses. In particular, since the cleaning solution mist comes into contact with the chemical atmosphere near the first chemical nozzle 31, which is the main source of the chemical atmosphere, the diffusion range of the chemical atmosphere can be effectively narrowed.

[0183] Next, a fourth embodiment will be described.

[0184] In Figure 19 below, configurations equivalent to those shown in Figures 1A to 18 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0185] The main difference between the fourth embodiment and the third embodiment is that the mist generator 105 is attached to the droplet shield 101 instead of the first chemical nozzle 31.

[0186] Figure 19 is a schematic cross-sectional view showing a vertical cross-section of the first chemical nozzle 31 and splash shield 101 according to the fourth embodiment of the present invention.

[0187] The liquid tank 107 of the mist generator 105 is located in the droplet shield 101, not in the first chemical nozzle 31. Figure 19 shows an example where the liquid tank 107 is integrated with the droplet shield 101. The upper surface 103u of the shield plate 103 corresponds to the bottom surface of the liquid tank 107. In the example shown in Figure 19, multiple ultrasonic transducers 106 are arranged on the bottom surface of the liquid tank 107.

[0188] The liquid tank 107 includes a cylindrical side wall 107s extending upward from the shield plate 103. The side wall 107s surrounds the entire circumference of the first chemical nozzle 31. The cleaning fluid is stored inside the side wall 107s. The height of the side wall 107s is set so that when the first chemical nozzle 31 is positioned at the outer edge (the position of the first chemical nozzle 31 shown by the dashed line in Figure 12), the side wall 107s does not come into contact with the first guard 53A, which is located in the upper position.

[0189] Next, a fifth embodiment will be described.

[0190] In Figures 20 to 24 below, configurations equivalent to those shown in Figures 1A to 19 are given the same reference numerals as in Figure 1A, etc., and their descriptions are omitted.

[0191] The main difference between the fifth embodiment and the first embodiment is that the first chemical nozzle 31 is a two-fluid nozzle, and when viewed from below, the inner circumference 103i of the shield plate 103 surrounds the entire circumference of the lower surface 90 of the first chemical nozzle 31 with spacing between them.

[0192] First, let's describe the first chemical nozzle 31.

[0193] Figure 20 is a schematic diagram showing the external appearance of the first chemical nozzle 31 according to the fifth embodiment of the present invention when viewed horizontally. The first chemical nozzle 31 is a two-fluid nozzle that generates a plurality of droplets that scatter downward toward the upper surface of the substrate W by colliding a liquid and a gas. The two-fluid nozzle may be an internal mixing type in which the liquid and gas collide inside the two-fluid nozzle, or an external mixing type in which the liquid and gas collide outside the two-fluid nozzle. Figure 20 shows an example in which the first chemical nozzle 31 is an external mixing type two-fluid nozzle.

[0194] The first chemical nozzle 31 includes at least one discharge port for discharging liquid and gas downward. The at least one discharge port may be a liquid discharge port for discharging liquid downward and a gas discharge port for discharging gas downward, or it may be a single fluid discharge port for discharging both liquid and gas. Figure 20 shows an example in which a single chemical discharge port 95 for discharging both liquid and gas opens on the lower surface 90 of the first chemical nozzle 31 and on the lower surface 90 of the downstream portion 88 of the first chemical nozzle 31, which corresponds to the lower end.

[0195] The liquid discharged from the first chemical nozzle 31 may be a single liquid prepared before use in the substrate processing apparatus 1, or it may be a mixture of two or more liquids mixed within the substrate processing apparatus 1. Figure 20 shows an example in which the first chemical nozzle 31 discharges SPM, which is a mixture of sulfuric acid and hydrogen peroxide. The sulfuric acid and hydrogen peroxide may be mixed inside the first chemical nozzle 31 or outside the first chemical nozzle 31.

[0196] The first chemical nozzle 31 includes a sulfuric acid inlet 91 into which sulfuric acid flows, a hydrogen peroxide inlet 92 into which hydrogen peroxide flows, and an internal space 93 corresponding to a liquid flow path that guides the sulfuric acid flowing into the sulfuric acid inlet 91 and the hydrogen peroxide flowing into the hydrogen peroxide inlet 92 toward the chemical discharge port 95 while mixing them. The first chemical nozzle 31 further includes a gas inlet 97 into which a gas such as an inert gas flows, and a gas flow path 98 that guides the gas flowing into the gas inlet 97 toward the chemical discharge port 95.

[0197] The internal space 93, which corresponds to the liquid flow path, extends vertically along the vertical centerline of the nozzle section 81. The gas flow path 98 is cylindrical and surrounds the entire circumference of the internal space 93. The gas flow path 98 extends vertically around the internal space 93. The lower end of the gas flow path 98 is located on the lower surface 90 of the first chemical nozzle 31, forming a circular chemical discharge port 95 (see Figure 22). The lower end of the internal space 93 may be located on the lower surface 90 of the first chemical nozzle 31, or it may be located above the lower surface 90 of the first chemical nozzle 31.

[0198] The gas flow path 98 is connected via a gas inlet 97 to a gas pipe 96p that guides the gas to be supplied to the first chemical nozzle 31. When the gas valve 96v interposed in the gas pipe 96p is opened, an inert gas such as nitrogen gas is supplied from the gas pipe 96p to the gas flow path 98 via the gas inlet 97. The inert gas supplied to the gas flow path 98 spreads circumferentially within the gas flow path 98 and flows downward within the gas flow path 98. As a result, the inert gas supplied to the gas flow path 98 is discharged downward from the chemical discharge port 95.

[0199] Next, I will explain the splash shield 101.

[0200] The following discussion will refer to Figures 20 to 23. Figure 20 is a schematic cross-sectional view showing a vertical cross-section of the splash shield 101 according to the fifth embodiment of the present invention. Figure 21 is a schematic horizontal view of the first chemical nozzle 31 and splash shield 101 according to the fifth embodiment of the present invention. Figure 22 is a schematic view from below of the first chemical nozzle 31 and splash shield 101 according to the fifth embodiment of the present invention. Figure 23 is a schematic diagram for explaining the connection space S2 according to the fifth embodiment of the present invention.

[0201] As shown in Figures 20 and 21, the substrate processing apparatus 1 is equipped with a splash shield 101 that catches splashes that scatter upward from the substrate W. The splash shield 101 includes a support arm 102 extending downward from the nozzle portion 81 and a shield plate 103 supported by the support arm 102. The support arm 102 is fixed to the first chemical nozzle 31. The shield plate 103 is fixed to the first chemical nozzle 31 via the support arm 102. Figure 21 shows an example in which two support arms 102 are fixed to one shield plate 103.

[0202] As shown in Figure 21, the support arm 102 includes a base plate 102b fixed to the first chemical nozzle 31, a lower plate 102L fixed to the first chemical nozzle 31 via the base plate 102b, and a pair of side plates 102s extending from the lower plate 102L to the base plate 102b. The base plate 102b is fixed to the first chemical nozzle 31 in contact with the nozzle portion 81. The lower plate 102L is fixed to the shield plate 103 in contact with the upper surface 103u of the shield plate 103. The shield plate 103 is fixed to the first chemical nozzle 31 via the lower plate 102L and the base plate 102b.

[0203] The shield plate 103 is a continuous ring-shaped plate extending around its entire circumference. As shown in Figure 22, the shield plate 103 includes an inner circumference 103i that surrounds the entire circumference of the lower surface 90 of the first chemical nozzle 31 when viewed from below, and an outer circumference 103o that surrounds the entire circumference of the inner circumference 103i when viewed from below. The shield plate 103 further includes an upper surface 103u extending from the inner circumference 103i to the outer circumference 103o, and a lower surface 104 below the upper surface 103u that extends from the inner circumference 103i to the outer circumference 103o.

[0204] In the examples shown in Figures 20 and 21, the upper surface 103u and lower surface 104 of the shield plate 103 are annular planes extending horizontally from the inner circumference 103i to the outer circumference 103o of the shield plate 103. The inner and outer edges of the upper surface 103u of the shield plate 103 are concentric circles. The inner and outer edges of the lower surface 104 of the shield plate 103 are also concentric circles. The thickness of the shield plate 103, that is, the vertical length from the lower surface 104 to the upper surface 103u of the shield plate 103, is constant from the inner circumference 103i to the outer circumference 103o of the shield plate 103.

[0205] The upper surface 103u and lower surface 104 of the shield plate 103 are positioned below the upper end of the first chemical nozzle 31. Figures 20 and 21 show an example in which the upper surface 103u and lower surface 104 of the shield plate 103 are positioned above the lower surface 90 of the first chemical nozzle 31 and below the gas inlet 96 into which the gas discharged from the first chemical nozzle 31 flows. The upper surface 103u of the shield plate 103 may be positioned at the same height as the lower surface 90 of the first chemical nozzle 31, or it may be positioned below the lower surface 90 of the first chemical nozzle 31. The same applies to the lower surface 104 of the shield plate 103.

[0206] As shown in Figure 23, the space above the upper surface 103u of the shield plate 103 and outside the inner circumference 103i of the shield plate 103 is the upper space S1. The space inside the inner circumference 103i of the shield plate 103 is the inner space S3. The space between the lower surface 104 of the shield plate 103 and the upper surface of the substrate W is the lower space S4. The upper space S1 is a vertical cylindrical shape concentric with the inner circumference 103i of the shield plate 103. The inner space S3 is a horizontal disc shape.

[0207] The first chemical nozzle 31 and the shield plate 103 form a connecting space S2 that connects the upper space S1 to the inner space S3. In Figure 23, the area enclosed by the thick dashed line represents a part of the connecting space S2. The connecting space S2 is a space that is connected vertically to the inner space S3 and horizontally to the upper space S1. The connecting space S2 may connect the upper space S1 to the inner space S3 only in a part of the angle range from 0 to 360 degrees around the center of the shield plate 103, or it may connect the upper space S1 to the inner space S3 at any position within that range.

[0208] Next, the operation of the first chemical nozzle 31 and the splash shield 101 on the substrate W will be described.

[0209] Figure 24 is a schematic diagram illustrating the airflow formed by the discharge of liquid and gas by the first chemical nozzle 31 according to the fifth embodiment of the present invention.

[0210] The first chemical nozzle 31 collides SPM, an example of a liquid, with nitrogen gas, an example of a gas, to generate multiple droplets of SPM that scatter downward toward the upper surface of the substrate W. When the first chemical nozzle 31 discharges SPM, or when the SPM collides with the upper surface of the substrate W or with the liquid on the substrate W, an SPM mist is generated. This SPM mist is received by a splash shield 101 attached to the first chemical nozzle 31. This prevents the mist from spreading. The splash shield 101 is made of a fluororesin that has resistance to chemicals such as PTFE (polytetrafluoroethylene) and PFE (pafluoroelastomer).

[0211] As shown in Figure 24, the first chemical nozzle 31 ejects SPM together with nitrogen gas downward from the chemical outlet 95. This generates multiple droplets of SPM that collide with the upper surface of the substrate W or the liquid on the substrate W. The nitrogen gas discharged from the first chemical nozzle 31 flows downward from the lower surface 90 of the first chemical nozzle 31 toward the upper surface of the substrate W. Subsequently, this nitrogen gas spreads vertically between the lower surface 104 of the shield plate 103 and the upper surface of the substrate W, and flows radially away from the first chemical nozzle 31 in a direction horizontally away.

[0212] The airflow formed by the first chemical nozzle 31 attracts gas near the first chemical nozzle 31 or the shield plate 103 towards the airflow due to the viscosity of the gas. Since the shield plate 103 is positioned near this airflow, the gas attracted towards the airflow bypasses the shield plate 103. This can generate an attractive force that draws the gas downward towards the inner space S3. This attractive force draws the mist floating in the upper space S1 towards the inside of the shield plate 103. This narrows the area over which the mist floating in the upper space S1 diffuses.

[0213] Furthermore, the lower surface 104 of the shield plate 103 restricts the spread of airflow in the vertical direction and reduces the decrease in the horizontal velocity component of the airflow. This allows the momentum of the airflow flowing along the upper surface of the substrate W to be maintained up to the guard 53, and the processing liquid atmosphere can be carried to the guard 53 by this airflow. Subsequently, the processing liquid atmosphere can be carried towards the exhaust duct 78 (see Figure 2A) by the airflow flowing from inside the guard 53, and the processing liquid atmosphere can be discharged from the chamber 12.

[0214] In the fifth embodiment, in addition to the effects of the first embodiment, the following effects can be achieved. Specifically, in the fifth embodiment, multiple droplets are generated that scatter downward toward the upper surface of a horizontal substrate W by colliding liquid and gas inside or outside the first chemical nozzle 31. As a result, multiple SPM droplets collide with the upper surface of the substrate W or the liquid on the substrate W. At this time, droplets are generated that scatter upward from the substrate W. Such droplets collide with the lower surface 104 of the shield plate 103 facing the upper surface of the substrate W and fall. This makes it possible to narrow the range over which the processing liquid atmosphere containing processing liquid particles diffuses.

[0215] Furthermore, the first chemical nozzle 31 discharges not only liquid but also gas. The gas discharged from the first chemical nozzle 31 flows downward from the lower surface 90 of the first chemical nozzle 31 toward the upper surface of the substrate W. Subsequently, this gas spreads vertically between the lower surface 104 of the shield plate 103 and the upper surface of the substrate W, and flows radially away from the first chemical nozzle 31 horizontally. The lower surface 104 of the shield plate 103 restricts the vertical spread of the airflow and reduces the decrease in the horizontal velocity component of the airflow. As a result, even after the airflow passes between the shield plate 103 and the substrate W, the horizontal velocity component of the airflow can be maintained at a large level, allowing the airflow to reach the components surrounding the substrate W, such as the guard 53.

[0216] In addition, the first chemical nozzle 31 and the shield plate 103 form a connection space S2 that connects the upper space S1, which is the space above the upper surface 103u of the shield plate 103 and outside the inner circumference of the shield plate 103, to the inner space S3, which is the space inside the inner circumference of the shield plate 103. The connection space S2 is located above the inner space S3 and inside the upper space S1. The connection space S2 is a space that is connected vertically to the inner space S3 and horizontally to the upper space S1. The lower space S4, which is the space between the lower surface 104 of the shield plate 103 and the upper surface of the substrate W, is connected to the upper space S1 via the inner space S3 and the connection space S2.

[0217] The gas flowing downward from the lower surface 90 of the first chemical nozzle 31 can pass inside the inner circumference of the shield plate 103. Furthermore, this gas flows radially away from the first chemical nozzle 31 between the lower surface 104 of the shield plate 103 and the upper surface of the substrate W. Due to the viscosity of the gas, the gas near the first chemical nozzle 31 or the shield plate 103 is attracted towards the airflow flowing downward from the first chemical nozzle 31 and the airflow flowing radially along the upper surface of the substrate W, and flows together with these airflows.

[0218] The shield plate 103 acts as a barrier to gases that are drawn towards the airflow formed by the first chemical nozzle 31, causing the gases to be diverted. This can generate an attractive force that draws the gas downwards into the inner space S3. When such an attractive force is generated, the mist floating in the upper space S1 is drawn into the inside of the shield plate 103 through the connecting space S2 that connects the upper space S1 and the inner space S3, and flows together with the airflow formed by the first chemical nozzle 31. This narrows the area over which the mist floating in the upper space S1 diffuses.

[0219] Furthermore, since the suction force is generated by utilizing the airflow formed by the liquid and gas discharged from the first chemical nozzle 31, energy does not need to be consumed solely for generating the suction force. Therefore, while efficiently utilizing energy, the range over which the processing liquid atmosphere, such as mist, circulates in the upper space S1 can be narrowed. This reduces the environmental burden while mitigating or preventing contamination of the substrate W or nearby components.

[0220] The first chemical nozzle 31 may be a nozzle other than a two-fluid nozzle. For example, the first chemical nozzle 31 may be a nozzle that generates multiple droplets without causing the liquid to collide with a gas. An example of such a nozzle is a high-pressure spray nozzle that sprays pressurized liquid downwards. When a high-pressure spray nozzle sprays pressurized liquid downwards, multiple droplets are generated that scatter downwards toward the upper surface of the substrate W, similar to a two-fluid nozzle, and an airflow is formed that flows downwards from the lower surface 90 or its vicinity of the first chemical nozzle 31.

[0221] Other Embodiments When the first chemical nozzle 31 and the droplet shield 101 are viewed from below, all or part of the chemical outlet 95 may be positioned on the outer edge 104o of the shield surface 104.

[0222] The chemical discharge port 95 of the first chemical nozzle 31 may be directed forward or backward of the first chemical nozzle 31, rather than to the left of the first chemical nozzle 31. If the horizontal distance between the first chemical nozzle 31 and the first rinse nozzle 33 is wide, or if the first rinse nozzle 33 is not to the right of the first chemical nozzle 31, the chemical discharge port 95 of the first chemical nozzle 31 may be directed to the right of the first chemical nozzle 31. For example, if the chemical discharge port 95 of the first chemical nozzle 31 is directed forward of the first chemical nozzle 31, the splash shield 101 can be placed in front of the nozzle portion 81 of the first chemical nozzle 31.

[0223] If the SPM can be discharged at an angle toward the upper surface of the substrate W, the chemical discharge port 95 may open on the lower surface 90 of the first chemical nozzle 31, rather than on the outer surface 89 of the first chemical nozzle 31 (the outer surface 89 of the downstream portion 88).

[0224] The shape of the nozzle portion 81 of the first chemical nozzle 31 is not limited to the shapes shown in Figures 4A to 4C. For example, the nozzle portion 81 of the first chemical nozzle 31 may have the same shape as the nozzle portion 81 of the second chemical nozzle 32 shown in Figures 4A to 4C.

[0225] The first chemical nozzle 31 may be supported only by the first nozzle moving unit 38. In other words, the second chemical nozzle 32 and the first rinse liquid nozzle 33 may be supported by a nozzle moving unit other than the first nozzle moving unit 38.

[0226] The sulfuric acid and hydrogen peroxide solution may be mixed in the arm portion 82 of the first chemical solution nozzle 31, rather than in the nozzle portion 81 of the first chemical solution nozzle 31. Alternatively, the sulfuric acid and hydrogen peroxide solution may be mixed outside the first chemical solution nozzle 31. In this case, the sulfuric acid and hydrogen peroxide solution may be mixed in the area outside the first chemical solution nozzle 31 in the lower space SL (see Figure 2A), or outside the chamber 12.

[0227] The splash shield 101 may not be a separate component from the first chemical nozzle 31, but may be an integral component with the first chemical nozzle 31. For example, the splash shield 101 may be integrated with the upstream portion 87 of the first chemical nozzle 31. In this case, the front surface 102f of the support arm 102 of the splash shield 101 may be in contact with the outer circumferential surface 89 of the downstream portion 88 of the first chemical nozzle 31.

[0228] The support arm 102 may be omitted from the splash shield 101. In this case, the shield plate 103 of the splash shield 101 may be a separate component attached to the first chemical nozzle 31, or it may be a component integrated with the first chemical nozzle 31.

[0229] If the droplet shield 101 does not come into contact with the SPM that is scattered from the first chemical nozzle 31 toward the upper surface of the substrate W, the entire shield surface 104 may be positioned below the lower end 95L of the chemical outlet 95.

[0230] The splash shield 101 may be omitted from the first chemical nozzle 31 according to the first to fourth embodiments.

[0231] The liquid tank 107 of the mist generator 105 may be positioned not above the nozzle portion 81 of the first chemical nozzle 31, but in a position that does not overlap the nozzle portion 81 of the first chemical nozzle 31 in a plan view. For example, the liquid tank 107 may be positioned in front of, behind, or to the side of the nozzle portion 81 of the first chemical nozzle 31. The liquid tank 107 may also be provided on the arm portion 82 of the first chemical nozzle 31, instead of or in addition to the nozzle portion 81 of the first chemical nozzle 31.

[0232] The cleaning fluid pipe 108p that supplies cleaning fluid to the liquid tank 107 of the mist generator 105 does not have to be attached to the first chemical nozzle 31. For example, the cleaning fluid pipe 108p may be fixed to the partition wall 13 of the chamber 12 so that cleaning fluid is supplied from the cleaning fluid pipe 108p to the liquid tank 107 when the first chemical nozzle 31 is in the standby position.

[0233] The cleaning solution may be discharged from the liquid tank 107 of the mist generator 105. For example, a suction pipe may be provided to suck up the cleaning solution in the liquid tank 107, or a blow pipe may be provided to blow out the cleaning solution in the liquid tank 107 by discharging gas into the liquid tank 107. The suction pipe or blow pipe may be used to discharge the cleaning solution from the liquid tank 107 when the first chemical nozzle 31 is in either the processing position or the standby position.

[0234] The first chemical nozzle 31 and the splash shield 101 may be cleaned. For example, a liquid pipe may be provided to discharge a rinsing solution such as pure water towards the first chemical nozzle 31 and the splash shield 101 located in the standby pod 111 (see Figure 2B). In this case, a gas pipe may be provided to dry the first chemical nozzle 31 and the splash shield 101 by discharging gas towards them located in the standby pod 111.

[0235] Instead of providing liquid piping for cleaning the first chemical nozzle 31 and the splash shield 101 in the standby pod 111, or in addition to doing so, the first chemical nozzle 31 and the splash shield 101 may be cleaned using a bottom nozzle 47 (see Figure 2A) that discharges the processing liquid upward toward the bottom surface of the substrate W held in the spin chuck 21.

[0236] Specifically, with the substrate W not positioned above the spin chuck 21, and the first chemical nozzle 31 and splash shield 101 positioned above the lower nozzle 47, the first chemical nozzle 31 and splash shield 101 may be moved back and forth horizontally within the range in which the discharged rinsing liquid hits the first chemical nozzle 31 or the splash shield 101 while a rinsing liquid such as pure water is discharged from the lower nozzle 47.

[0237] The first chemical nozzle 31 and the splash shield 101 may be cleaned each time one or more substrates W are processed by one processing unit 2, or at regular intervals, or at any time. The first chemical nozzle 31 and the splash shield 101 may also be cleaned when performing maintenance on the processing unit 2 (for example, when performing chamber cleaning to clean the inside of the processing unit 2).

[0238] The spin chuck 21 is not limited to a mechanical chuck in which multiple chuck pins 22 are in contact with the outer surface of the substrate W, but may also be other types of chucks such as a vacuum chuck.

[0239] The substrate processing apparatus 1 is not limited to an apparatus for processing a disc-shaped substrate W, but may also be an apparatus for processing a polygonal substrate W.

[0240] You may combine two or more of the aforementioned components. You may also combine two or more of the aforementioned processes.

[0241] Furthermore, various design modifications can be made within the scope of the matters described in the patent claims. [Explanation of Symbols]

[0242] 1: Substrate processing equipment 31: First chemical solution nozzle (processing solution nozzle) 38: First nozzle movement unit (nozzle actuator) 90: Lower surface of the first chemical nozzle 94: Drug dispensing port 101: Splash Shield 103: Shield Plate 103i: Inner circumference of the shield plate 103o: Outer circumference of the shield plate 103u: Top surface of the shield plate 104: Underside of the shield plate (shield surface) 105: Mist Generator 106: Ultrasonic transducer 107:Liquid tank 108p: Cleaning fluid piping W: Circuit board

Claims

1. A processing liquid nozzle that discharges the processing liquid toward the upper surface of a horizontal substrate, A mist generator that produces a mist of cleaning liquid floating near the aforementioned processing liquid nozzle, The system includes a nozzle actuator that moves the processing liquid nozzle and mist generator to move the collision position within the upper surface of the substrate where the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate, The mist generator includes a liquid tank for storing the cleaning liquid and moving together with the processing liquid nozzle, and an ultrasonic transducer for generating mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank. A substrate processing apparatus wherein the liquid tank is positioned above the processing liquid nozzle so as to overlap the processing liquid nozzle in a plan view.

2. The substrate processing apparatus according to claim 1, wherein the mist generator further includes a cleaning liquid piping that supplies the cleaning liquid to the liquid tank and moves together with the processing liquid nozzle.

3. The substrate processing apparatus according to any one of claims 1 to 2, further comprising a splash shield that includes a shield surface directly facing the upper surface of the substrate and moves together with the processing liquid nozzle.

4. A processing liquid nozzle that discharges processing liquid toward the upper surface of a horizontal substrate, A mist generator that produces a mist of cleaning liquid floating near the aforementioned processing liquid nozzle, A nozzle actuator moves the processing liquid nozzle and mist generator to move the collision position within the upper surface of the substrate where the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate, The substrate includes a shield surface that is directly opposite to the upper surface and a splash shield that moves together with the processing liquid nozzle, The mist generator includes a liquid tank for storing the cleaning liquid and moving together with the processing liquid nozzle, and an ultrasonic transducer for generating mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank. The substrate processing apparatus comprises a liquid tank positioned above the splash shield so as to overlap the splash shield in a plan view.

5. A processing liquid nozzle that discharges processing liquid toward the upper surface of a horizontal substrate, A mist generator that produces a mist of cleaning liquid floating near the aforementioned processing liquid nozzle, A nozzle actuator moves the processing liquid nozzle and mist generator to move the collision position within the upper surface of the substrate where the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate, Equipped with a shield plate, The processing liquid nozzle includes a lower surface with at least one discharge port opening for discharging liquid downwards, and generates a plurality of droplets that scatter downward toward the upper surface of the substrate. The shield plate includes, when viewed from below, an inner circumference surrounding the lower surface of the processing liquid nozzle, an annular lower surface extending outward from the inner circumference and facing the upper surface of the substrate, and an annular upper surface extending outward from the inner circumference above the lower surface. The processing liquid nozzle and shield plate form a connecting space that connects the upper space, which is the space above the upper surface of the shield plate and outside the inner circumference, to the inner space, which is the space inside the inner circumference. A substrate processing apparatus in which the aforementioned connection space is a space that is connected vertically to the inner space and horizontally to the upper space.

6. A process of discharging a cleaning liquid from the nozzle toward the upper surface of a horizontal substrate while generating a mist of cleaning liquid floating near the nozzle in a mist generator, The process includes moving the processing liquid nozzle and mist generator on the nozzle actuator, thereby moving the collision position within the upper surface of the substrate where the processing liquid discharged from the processing liquid nozzle collides with the upper surface of the substrate, The mist generator includes a liquid tank for storing the cleaning liquid and moving together with the processing liquid nozzle, and an ultrasonic transducer for generating mist from the cleaning liquid in the liquid tank by vibrating the cleaning liquid in the liquid tank. A substrate processing method wherein the liquid tank is positioned above the processing liquid nozzle so as to overlap the processing liquid nozzle in a plan view.

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