Wafer handling robot with radial gas curtain and / or internal volume control

Abstract

To provide systems and techniques for reducing or eliminating particulate contamination from wafer handling robots configured for vertical translation.SOLUTION: In an EFEM 210, a collar 232 includes an aperture 252, through which a turret 224 of a wafer handling robot 214 may be extended or retracted, and further includes one or more radial gas passages 234. Gas directed at the turret from the radial passage(s) turns downward when it strikes the turret and prevents or discourages gas from within a base 230 of the wafer handling robot from escaping through the aperture. And, a bellows is affixed to a bottom of the turret and to a bottom of the base such that volume of the base occupied by the turret and the bellows 254 remains generally fixed regardless of a degree to which the turret is extended from the base.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] <Incorporation by Reference> As part of this application, a PCT application form is filed simultaneously with this specification. Each application specified in this simultaneously filed PCT application form and for which this application claims benefit or priority is hereby incorporated by reference in its entirety for all purposes.

Background Art

[0002] Semiconductor processing tools often utilize an equipment front-end module (EFEM). This is a large chamber or vestibule that is part of the semiconductor processing tool and generally has a load port on one side for receiving a front opening unified pod (FOUP) used to gather wafers between semiconductor processing tools, for example, transporting 25 wafers at a time. The EFEM also typically has one or more load locks or other interfaces on the opposite side of the load port for introducing wafers into a transfer chamber or processing chamber. A wafer handling robot is typically located within the EFEM to transfer wafers between the load port and the load lock and potentially other stations within the EFEM, such as a wafer aligner.

[0003] The wafer handling robots used in EFEMs often include the function of moving wafers horizontally via an articulated arm having arm links configured to rotate with respect to each attached arm link and vertically via, for example, a linear movement mechanism that raises or lowers the entire robot arm assembly.

[0004] This specification presents an improved wafer handling robot configuration that is particularly suitable for use in certain types of EFEMs, such as those having a corrosive environment inside, for example, an environment with an elevated moisture level or an environment in which one or more gases such as chlorine, fluorine, or other corrosive substances may be present. [Overview of the Initiative]

[0005] Details of one or more embodiments of the subject matter described herein are given in the accompanying drawings and the following description. Other features, embodiments, and advantages will become apparent from the description, drawings, and claims.

[0006] The inventors have devised at least two different mechanisms that can be used individually or in tandem to provide an improved wafer handling robot. Both mechanisms reduce the possibility of particulate contamination caused by the vertical (z-axis) movement of the wafer handling robot.

[0007] A wafer handling robot with z-axis functionality typically includes a base that can be fixed to a supporting chamber or structure (such as an EFEM, which may be simply referred to herein as a chamber, but should be understood to include an EFEM), a turret mounted on the base so that the turret can move perpendicularly to the base, and one or more robotic arms supported by the turret and actuated by motors located within the turret. The turret is typically largely contained within the base when the wafer handling robot is in its lowest vertical position, and when raised to an elevated position, it can rise out of the base through an opening in the base. The inventors have determined that the vertical movement of the turret relative to the base is a source of particulate contamination because each time the turret descends or rises, the displacement of the turret within the base causes air (or any atmosphere present in the chamber) to be pushed out of or drawn into the base. For example, in the case of a turret with a diameter of 8 inches and a vertical travel of 18 inches, the turret can be displaced by more than 0.5 cubic feet of volume as it travels.

[0008] Such displacements, when a wafer handling robot is operated to lower its robotic arm, can cause gases within the base to be released into the surrounding environment surrounding the wafer in the chamber or a similar structure, potentially releasing particulate matter originating from the equipment in the base into the chamber, where it may come into contact with and contaminate any wafers present in the chamber. Such displacements can also cause air from within the chamber to be drawn into the base of the wafer handling robot when the robotic arm is operated to raise it, potentially causing problems in the chamber where corrosive gases are present. Such corrosive gases can damage components inside the base, such as bearings, motors, and electrical cables, and thus affect the performance or operability of the wafer handling robot. Such corrosion, as recognized, can also lead to the generation of further particulate matter, increasing the likelihood that wafers will be contaminated with particulate matter as the wafer handling robot moves.

[0009] The inventors have devised two particulate mitigation techniques that can be used in wafer handling robots as described above and can reduce or eliminate particulate contamination caused by turret displacement of such wafer handling robots.

[0010] The first technique is a collar or other structure that provides a radial gas curtain that extends fully around the turret near the top of the base. The radial gas curtain can deliver a thin radial flow of air (or other gas such as nitrogen) across a relatively small gap towards the turret. After bridging the gap, this gas curtain collides with the sides of the turret and rotates to flow generally vertically. Some of this air flows into the base of the wafer handling robot, and the rest flows into the chamber. Some of the air flowing into the base tends to push against or oppose any airflow attempting to flow out of the base at the location of the gas curtain, thereby causing any particulate matter that could be mixed into such air to remain within the base. Some of the air flowing into the base may also tend to increase the internal pressure within the base (if the base has exhaust vents for releasing such gases that are small enough to create a positive pressure difference between the base and the surrounding environment). The resulting positive pressure within the base relative to the chamber can prevent corrosive elements from entering the base at locations other than the gas curtain. Some of the air flowing into the chamber from the collar or other structures tends to push against or oppose any airflow attempting to enter the base at the gas curtain's location, thereby causing any corrosive elements that could be mixed into such air to remain within the chamber. Although the term "air" is frequently used herein, it will be understood that other gases, such as nitrogen, can be used instead of air, as previously explained.

[0011] The second technology is a bellows unit that can be attached with one end to the bottom of the turret and the other end to the base. Thus, the bellows unit can expand into the internal volume of the base when the turret rises and compress when the turret descends. The bellows can act to keep the free volume within the base nearly constant, regardless of the vertical position of the turret relative to the base. As a result, the overall displacement of air from the base due to the vertical movement of the turret relative to the base may be little to no. The bellows can also act to prevent potentially corrosive air from the surrounding environment of the chamber from being drawn into the base from the bottom.

[0012] While each technology can reduce the possibility or severity of particulate contamination on its own, using both technologies together has a synergistic effect, reducing the particulate generation rate of the wafer handling robot's vertical movement system within the chamber to virtually zero, for example, fewer than 10 particles in a 72-minute window.

[0013] In some embodiments, a device can be provided comprising one or more robotic arms, a turret supporting one or more robotic arms, a linear movement mechanism supporting the turret, and a base supporting the linear movement mechanism. In such a device, the linear movement mechanism can be configured to move the turret and one or more robotic arms along a first axis relative to the base, the base can include an opening sized such that at least a first portion of the turret can pass through when the turret moves along the first axis, the opening can have one or more radial gas passages extending substantially around the opening, the one or more radial gas passages can be fixed in size, a first gap can exist between the internal edge of the opening and the first portion of the turret, and the first gap can extend around the outer circumference of the first portion of the turret.

[0014] In some embodiments of the device, the first gap between the first part of the turret and the inner edge of the opening may not have a structure intervening substantially around the entire turret.

[0015] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0016] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0017] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of 0.25 mm or less in a direction parallel to the first axis.

[0018] In some embodiments of the apparatus, one or more radial gas passages may be at least partially defined by one or more first surfaces and one or more second surfaces, and one or more first surfaces may face one or more second surfaces and be separated from one or more second surfaces by a second gap.

[0019] In some embodiments of the apparatus, one or more first surfaces and one or more second surfaces may be perpendicular to the first axis.

[0020] In some embodiments of the apparatus, each of one or more first surfaces may define a first radial profile with respect to a second axis parallel to a first axis and centered on an opening, and each of one or more second surfaces may define a second radial profile with respect to a second axis, the radial profiles may include one or more first radial profiles, each of the one or more second radial profiles may lie in a corresponding plane that coincides with and is parallel to the second axis, each first radial profile may define an average first linear radial profile within ±30° from perpendicular to the second axis, and each second radial profile may define an average second linear radial profile within ±30° from perpendicular to the second axis.

[0021] In some embodiments of the apparatus, the apparatus may further include one or more plenum volumes, one or more gas inlets, and one or more flow control components configured to regulate the flow of gas to one or more gas inlets. In such embodiments, each gas inlet may be fluidically connected to one of the one or more plenum volumes, each of the one or more plenum volumes may be fluidically connected to at least one of the one or more gas inlets, each of the one or more gas inlets may be fluidically interposed between one of the one or more plenum volumes and one or more flow control components, and each of the one or more plenum volumes may be fluidically interposed between one of the one or more gas inlets and one or more radial gas passages.

[0022] In some embodiments of the apparatus, the apparatus may further include one or more gas sources, and one or more flow control components may be fluidically connected to one or more gas sources and configured to deliver gas from one or more gas sources to one or more plenum volumes at a rate of 25 to 150 standard liters per minute. In such embodiments, one or more radial gas passages may be sized such that gas from one or more plenum volumes flows through one or more radial gas passages at a rate of at least 5 m / s.

[0023] In some embodiments of the device, the first portion of the turret may have a first nominal circular cross-section, and the opening may have a corresponding second nominal circular cross-section having a diameter larger than the diameter of the first nominal circular cross-section.

[0024] In some embodiments of the apparatus, one or more radial gas passages may consist of only a single gas passage, which is in the form of a radial slit extending around the entire opening without interrupting continuity.

[0025] In some embodiments of the device, the first gap may be 0.5 mm to 5 mm around the turret.

[0026] In some embodiments of the apparatus, the apparatus may further include a bellows. The first end of the bellows may be fixed to the end of a turret located within the base, and the second end of the bellows opposite the first end may be fixed to the surface of the base opposite the opening to the base, and the bellows may expand in response to the movement of the turret away from the surface of the base, and the bellows may contract in response to the movement of the turret toward the surface of the base.

[0027] In some embodiments of the device, the bellows may have a first average enclosed cross-sectional area when viewed along a first axis, one or more outermost surfaces of the first portion of the turret may define a second average cross-sectional area when viewed along the first axis, and the first average enclosed cross-sectional area may be substantially equal to the second average cross-sectional area.

[0028] In some embodiments of the device, the first portion of the turret may be nominally circular and may have a first nominal diameter, the bellows may have a plurality of pleats, each pleat may have an inner diameter and an outer diameter, and the average of the inner and outer diameters of the pleats may be substantially equal to the first nominal diameter.

[0029] In some embodiments of the device, the base may have one or more vents on the surface of the base and within the region surrounded by the bellows when viewed along the first axis.

[0030] In some embodiments, a device can be provided that includes one or more robotic arms, a turret that supports the one or more robotic arms, a linear movement mechanism that supports the turret, a bellows, and a base that supports the linear movement mechanism. In such embodiments, the linear movement mechanism can be configured to move the turret and the one or more robotic arms along a first axis relative to the base, the base can include an aperture sized such that at least the first portion of the turret can pass through when the turret moves along the first axis, a first end of the bellows can be fixed to a first end of the turret located within the base, a second end of the bellows opposite the first end of the bellows can be fixed to a first surface of the base opposite the base through the aperture, the bellows can expand in response to movement of the turret away from the surface of the base, and the bellows can contract in response to movement of the turret towards the surface of the base.

[0031] In some embodiments of the device, a bellows connecting the turret to a first surface of the base and a second surface of the base opposite to it may be omitted.

[0032] In some embodiments of the device, the bellows may have a first mean enclosing cross-sectional area when viewed along a first axis, and one or more outermost surfaces of the first part of the turret may define a second mean cross-sectional area when viewed along the first axis, and the first mean enclosing cross-sectional area may be substantially equal to the second mean cross-sectional area.

[0033] In some embodiments of the apparatus, the first part of the turret may be nominally circular and may have a first nominal diameter, and the bellows may have a plurality of pleats, each pleat may have an inner diameter and an outer diameter, and the average of the inner and outer diameters of the pleats may be substantially equal to the first nominal diameter.

[0034] In some embodiments of the apparatus, the base may have one or more vents on the surface of the base and within the region surrounded by the bellows when viewed along the first axis.

[0035] In some embodiments of the apparatus, the opening may have one or more radial gas passages extending substantially around the entire opening, the one or more radial gas passages may be of a fixed size, and a first gap may exist between the internal edge of the opening and a first portion of the turret, and the first gap may extend around the outer circumference of the first portion of the turret.

[0036] In some embodiments of the device, the first gap between the first part of the turret and the inner edge of the opening may be without an intervening structure.

[0037] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0038] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0039] In some embodiments of the apparatus, one or more radial gas passages may have a minimum width of 0.25 mm or less in a direction parallel to the first axis.

[0040] In some embodiments of the apparatus, one or more radial gas passages may be at least partially defined by one or more first surfaces and one or more second surfaces, and one or more first surfaces may face one or more second surfaces and be separated from one or more second surfaces by a second gap.

[0041] In some embodiments of the apparatus, one or more first surfaces and one or more second surfaces may be perpendicular to the first axis.

[0042] In some embodiments of the apparatus, each of one or more first surfaces may define a first radial profile with respect to a second axis parallel to a first axis and centered on an opening, and each of one or more second surfaces may define a second radial profile with respect to a second axis, and each radial profile including one or more first radial profiles and one or more second radial profiles may lie in a corresponding plane that coincides with and is parallel to the second axis, and each first radial profile may define an average first linear radial profile within ±30° from perpendicular to the second axis, and each second radial profile may define an average second linear radial profile within ±30° from perpendicular to the second axis.

[0043] In some embodiments of the apparatus, the apparatus may further include one or more plenum volumes, one or more gas inlets, and one or more flow control components configured to regulate the flow of gas to one or more gas inlets. In such embodiments, each gas inlet may be fluidically connected to one of the one or more plenum volumes, each of the one or more plenum volumes may be fluidically connected to at least one of the one or more gas inlets, each of the one or more gas inlets may be fluidically interposed between one of the one or more plenum volumes and one or more flow control components, and each of the one or more plenum volumes may be fluidically interposed between one of the one or more gas inlets and one or more radial gas passages.

[0044] In some embodiments of the apparatus, the apparatus may include one or more gas sources. In such embodiments, one or more flow control components may be fluidically connected to one or more gas sources and may be configured to supply gas from one or more gas sources to one or more plenum volumes at a rate of 25 to 150 standard liters per minute, and one or more radial gas passages may be sized such that gas from one or more plenum volumes flows through one or more radial gas passages at a rate of at least 5 m / s.

[0045] In some embodiments of the device, the first portion of the turret may have a first nominal circular cross-section, and the opening may have a corresponding second nominal circular cross-section having a diameter larger than the diameter of the first nominal circular cross-section.

[0046] In some embodiments of the apparatus, one or more radial gas passages may consist of only a single gas passage, which is in the form of a radial slit extending around the entire opening without interrupting continuity.

[0047] In some embodiments of the device, the first gap may be 0.5 mm to 5 mm around the turret. [Brief explanation of the drawing]

[0048] [Figure 1] Figure 1 is a diagram of an exemplary semiconductor processing tool.

[0049] [Figure 2] Figure 2 is a diagram of an exemplary EFEM having an exemplary wafer handling robot in the first configuration.

[0050] [Figure 3] Figure 3 is a diagram of the exemplary EFEM of Figure 2, which has an exemplary wafer handling robot in a second configuration.

[0051] [Figure 4] Figure 4 is a diagram of the exemplary EFEM of Figure 2, which has an exemplary wafer handling robot in a third configuration.

[0052] [Figure 5] Figure 5 is a cross-sectional view of a portion of an exemplary gas curtain system.

[0053] [Figure 6] Figure 6 is a cross-sectional view of a part of another exemplary gas curtain system.

[0054] [Figure 7] Figure 7 is a cross-sectional view of another exemplary gas curtain system.

[0055] [Figure 8] Figure 8 is a top cross-sectional view of an exemplary gas curtain system.

[0056] [Figure 9] Figure 9 is a top cross-sectional view of another exemplary gas curtain system.

[0057] [Figure 10]Figure 10 is a top cross-sectional view of another exemplary gas curtain system. [Modes for carrying out the invention]

[0058] As described above, wafer handling robots used in EFEM or other types of semiconductor processing tool chambers can utilize systems like those briefly described above to reduce the generation of fine particles by the wafer handling robot and, for example, reduce the possibility of internal components of the wafer handling robot being exposed to corrosive gases (when the wafer handling robot is used in such an environment).

[0059] Figure 1 illustrates an exemplary semiconductor processing tool. Figure 1 shows a semiconductor processing tool 100 including an EFEM 110 in which a wafer handling robot 114 is located. The EFEM 110 can be connected to one or more load ports 106, which can allow wafers housed in a FOUP 108 to be transferred to the EFEM 110 by the wafer handling robot 114. The EFEM 110 can also be connected to a transfer chamber 102 (or other chambers such as a processing chamber) by one or more load locks 104. The EFEM 110 may also include a fan unit 112 that can push air within the EFEM down into a vent system at the floor of the EFEM 110. In other embodiments, the vent system may simply be connected to an exhaust system having a negative pressure source, e.g., a blower unit, to draw air downward through the EFEM 110 (in yet another embodiment, the EFEM may not have a vent system at all).

[0060] Figure 2 is a diagram of an exemplary EFEM having an exemplary wafer handling robot in a first configuration. In Figure 2, the EFEM 210 is shown, and in this example, the EFEM 210 is not shown mounted on other components, such as a load port, load lock, etc., in order to avoid excessive confusion and to allow the explanation to focus on the wafer handling robot 214. The wafer handling robot 214 may include a base 230 having a linear movement mechanism 242 inside, configured to raise or lower a turret 224, for example. The linear movement mechanism 242 in this example includes a ball screw 244 that can pass through a ball screw nut 246 attached to the turret 224, and is supported at one end by a bearing support 248 and at the other end by a motor 250. When the motor 250 is actuated and rotates the ball screw 244, the ball screw 244 raises and lowers the ball screw nut 246, thereby extending or retracting the turret 224 through the opening 252 along a direction parallel to the first axis 238. The base 230 may have a housing that generally surrounds and protects the hardware within the base 230, and this housing may have various openings or leak paths that can allow gas to flow between the inside and outside of the housing (as described below).

[0061] The turret 224 can support one or more robotic arms, which may include, for example, an upper link 218, a lower link 220, and an end effector 222, and which may be actuated by various drive motors and other systems located within (or elsewhere) the turret.

[0062] As previously described, wafer handling robots may include either or both of the two techniques described herein that can help reduce particle generation by the wafer handling robot and / or protect the wafer handling robot from potentially harmful exposure to a corrosive surrounding environment.

[0063] The first technique, described in more detail below, involves incorporating a radial gas curtain which may be provided by a collar 232 defining the opening 252. The collar 232 may include one or more radial gas passages 234 that are fluidly connected to the plenum volume 236 within the collar 232. Gas can flow into the plenum volume 236 through one or more gas inlets (not shown) and then flow radially inward toward the turret 224 from one or more radial gas passages 234 at a relatively high speed, e.g., 5 m / s, 10 m / s, 15 m / s, 20 m / s, 25 m / s, or higher. One or more radial gas passages 234 may be sized to be relatively thin, for example, having a height of 1 mm, 0.75 mm, 0.5 mm, or 0.25 mm or less, thereby enabling the desired gas velocity to be achieved with a reduced amount of gas volumetric flow rate, e.g., between 25 and 150 standard liters / minute (SLM) or between 50 and 100 SLM. A first gap 240 exists between the turret 224 and the collar 232, allowing a first portion 226 of the turret 224 to move through the opening 252 without contacting the collar 232. This first gap 240 can be maintained at a value of 5 mm, 4 mm, 3 mm, 2 mm, 1 mm, or 0.5 mm or less (or in between). In this example, the turret 224 is generally cylindrical and has a first nominal diameter 228, and the opening 252 is a circular opening with a nominal diameter equal to twice the first gap 240 plus the first nominal diameter 228. Other embodiments may feature a turret 224 with a different nominal cross-sectional shape, e.g., square, hexagonal, etc., and it will be understood that the opening 252 in the collar 232 can be similarly shaped, such that the first gap 240 remains generally constant around the first portion 226 of the turret 224, e.g., ±10% or ±20%.

[0064] As described above and in more detail below, a gas such as clean, dry air, nitrogen, or other gas that may be compatible with the environment within the EFEM and / or the internal components of the wafer handling robot may flow through the plenum volume 236, exit through one or more radial gas passages 234, and flow radially inward toward the outer surface of the turret 224, thereby allowing the gas flow to rotate so as to flow upward or downward along the outer surface of the turret 224. A portion of the gas flowing downward into the base 230 acts to push against any gas that may be attempting to flow out of the base through the first gap 240, thereby resisting the gas flow from within the base 230 through the opening 252 and any particulate matter that may be mixed in therewith. The base 230 may also have one or more exhaust fans 265 that can be positioned along the surface of the base 230, for example, the bottom surface 264 of the base 230, and can be controlled to exhaust gas from within the base to relieve pressure from within the base 230. The fan speed can be controlled so that the volumetric flow rate of gas passing through the fan is nominally equal to the volumetric flow rate of gas entering the base 230 through the opening 252, for example, to about half the volumetric flow rate of gas exiting the collar 232. This releases any pressure accumulated in the base 230 by the gas flow from the collar 232, thereby allowing the gas flow from the collar 232 to continue to counteract the gas flow from within the base 230. In some embodiments, the gas flowing out of the base 230 by the fan may be drawn downward by a downdraft within the EFEM with an exhaust system located on the floor. In other embodiments, the fan 265 may be omitted and replaced with one or more vents or exhaust ports that can be provided to allow the gas introduced into the base 230 by the collar 232 to exit the base 230 and be discharged into the surrounding environment of the EFEM 210 or into another chamber in which the base 230 is located.In such cases, the vent or exhaust port can be sized such that, during normal operation (i.e., using the EFEM210 or other chamber under nominal ambient pressure conditions used during wafer transfer operations, and using the collar 232 or other structure that provides a radial gas curtain at nominal flow rates), an internal pressure of at least several pascals higher than the ambient pressure in the EFEM210 is maintained in the base 230, thereby preventing or reducing the possibility of corrosive gases in the EFEM210's surrounding environment entering the base 230.

[0065] A second technique that may be included in the wafer handling robot is the use of a bellows 254 that spans between the bottom of the turret 224 and the base surface 264, either alone or in combination with the radial gas curtain described above. The bellows 254, which can be made of a flexible material such as an elastomer, elastomer-impregnated fabric, or thin metal, may include a first end 260 attached to one or more base surfaces of the turret 224 and a second end 262 attached to the base surface 264 of the base 230. The base surface 264 of the base 230 may have one (or more) vents 258 that can release gas from within the bellows 254 when the bellows 254 is compressed, for example, when the turret 224 moves from an elevated position to a lowered position.

[0066] In some embodiments, the bellows 254 may have a plurality of pleats 256, each having an inner diameter 266 and an outer diameter 268. The inner diameters 266 and outer diameters 268 of the pleats 256 of the bellows 254 may be selected to result in an average diameter that is generally equal to the first nominal diameter 228 of the first portion 226 of the turret 224, for example, within ±10% or ±20%. By selecting the inner diameters 266 and outer diameters 268 in this way, the turret 224 and the bellows 254 together can occupy a volume within the base 230, whose size remains nominally constant, regardless of how much the turret 224 extends from the base 230 or only a little. As a result, when the turret 224 moves into or out of the base 230, the volume of gas displaced within the base 230 (excluding the volume of air that is within the base 230 but "separated" from the internal volume of the base 230 by the bellows 254) can be ignored. Thus, by using the bellows 254 as shown in Figure 2, the reciprocating motion of the turret 2 prevents (or at least greatly reduces) the amount of gas that could be expelled from within the base through the opening 252. Figure 3 is a diagram of the exemplary EFEM of Figure 2 in a second configuration, e.g., partially extended, and Figure 4 is a diagram of the exemplary EFEM of Figure 2 in a third configuration, e.g., fully retracted. As seen in each configuration, the internal volume 231 of the base 230 remains approximately the same regardless of how much the turret 224 is extended or retracted. Therefore, by using bellows in the manner shown in Figures 2 to 4, it may be possible to extend or retract the turret 224 of the wafer handling robot 214 with little to no displacement of the air (or gas) inside the base 230. This significantly reduces the possibility that fine particles mixed in such gas will be forcibly expelled from the base 230 by the reciprocating motion of the turret.

[0067] It will also be understood that the bellows described above can be used in conjunction with turrets whose shape is not nominally cylindrical. In such embodiments, the inner and outer diameters of the bellows pleats can be selected to define an average cross-sectional area that is approximately equal to the cross-sectional area within the outermost surface of the first part of the turret and in a plane perpendicular to the first axis 238 (for example, based on the area within a circle having a diameter that is the average of the inner and outer diameters of the bellows pleats) (or, if a non-circular bellows is used, the average cross-sectional area of ​​the bellows, including the area within the bellows, may be approximately equal to the cross-sectional area within the outermost surface of the first part of the turret).

[0068] As explained earlier, the bellows described above can be used with or without the radial gas curtain features described above (and vice versa). The radial gas curtain features can be constructed in many different ways, as will be described in more detail below.

[0069] Figure 5 is a cross-sectional view of a portion of an exemplary gas curtain system. As seen in Figure 5, the collar 532 may have a plenum volume 536 supplied with air by one or more gas inlets 574. The plenum volume 536 may be configured to distribute gas from one or more gas inlets 574 to one or more radial gas passages 534. One or more radial gas passages 534 may be directed radially inward toward the turret 524, for example, across a first gap 540, to direct gas, for example air, from the plenum volume 536 toward the turret 524. In the embodiment shown in Figure 5, one or more radial gas passages 534 take the form of a single circumferential radial slit extending around the entire turret 524. In this case, the radial gas passages 534 are provided by a first surface 580 and a second surface 582, which face each other and may be separated by a second gap 584. The first surface 580 may be defined by a first cross-sectional radial profile 586, which in this example is a line, and can be represented by an average first linear radial profile 590. Similarly, the second surface 582 may be defined by a second cross-sectional radial profile 588, which in this example is also a line, and can be represented by an average second linear radial profile 592.

[0070] Figure 5 shows a linear radial slit as an exemplary radial gas passage, i.e., a slit in which the average first linear radial profile 590 and the average second linear radial profile 592 are parallel to each other and perpendicular to the first axis 538. However, other configurations of radial gas passages, including radial gas passages having curved or inclined first and second surfaces, can also be used.

[0071] Figure 6 is a cross-sectional view of a part of another exemplary gas curtain system. The gas curtain system in Figure 6 is similar to that in Figure 5, and the same last two digit callouts in Figure 6 as in Figure 5 refer to similar structures; the reader should refer to the preceding description in Figure 5 for a description of these structures. The gas curtain system in Figure 6 differs from the gas curtain system in Figure 5 in that the radial gas passages 634 have different cross-sectional profiles. For example, the radial gas passages 634 are defined by a first surface 680 and a second surface 682. The first surface 680 may have a curved first cross-sectional radial profile 686 defining an average first linear radial profile 690 and a curved second cross-sectional radial profile 688 defining an average second linear radial profile 692. In some such embodiments, the average first linear radial profile 690 and the average second linear radial profile 692 may each be within a range of ±10°, ±20°, or ±30° of an axis perpendicular to the first axis 638. In some further such embodiments, the average first linear profile 690 and the average second linear profile 692 can be angled asymmetrically with respect to an axis perpendicular to the first axis 638, for example. For example, both the average first linear profile 690 and the average second linear profile 692 can be angled slightly downward toward the base, thereby causing the radial curtain gas flow to be biased toward the base 230 rather than in the EFEM 210 after impacting the turret 224. In another example, both the average first linear profile 690 and the average second linear profile 692 can be angled slightly upward toward the base, thereby causing the radial curtain gas flow to be biased toward the EFEM 210 rather than in the base 230 after impacting the turret 224. This may make it possible to adjust the amount of gas allocated to prevent gas from within the EFEM 230 from entering the base 230 through the opening 252, compared to preventing air from within the base 230 from entering the EFEM 230 through the opening 252.

[0072] As previously described, the gas discharged from one or more radial gas passages of one of the collars described herein may be directed towards the turret of a wafer handling robot. Figure 7 is a cross-sectional view of an exemplary gas curtain system showing such gas flow. As seen in Figure 7, a collar 732 is shown, which has a plenum volume 736 that receives gas from the gas inlet 774 (indicated by the airflow arrow) and distributes the gas into the radial gas passage 734. After the gas is discharged from the radial gas passage 734, it is directed radially inward across the first gap 740 so as to collide with the side of the turret 724. The gas flow then splits into two common directions: an upward direction returning to the EFEM and a downward direction toward the base.

[0073] It will be understood that the collars and the radial gas passages they contain can be provided in many forms. In some embodiments, the collars may be integrated into the housing of the base or another component, rather than being separate components. Some embodiments of the gas curtain systems described herein may feature radial gas passages of various shapes. Some of these various embodiments are described below.

[0074] Figure 8 is a top cross-sectional view of an exemplary gas curtain system. Figure 8 shows a collar 832 containing a plenum volume 836 through which gas is supplied via a gas inlet 874. A turret 824 extends through an opening in the collar 832 and is separated from the collar 832 by a first gap 840. The gas from the plenum volume 836 can flow across the first gap 840 through a radial gas passage 834, which is a single circumferential radial slit, as is the case with some of the earlier collars described herein. Such a radial gas passage 834 can provide a gas flow that is uniformly distributed around the circumference of the turret 824.

[0075] Figure 9 is a top cross-sectional view of another exemplary gas curtain system. The gas curtain system in Figure 9 is similar to that in Figure 8, and the same last two digit callouts in Figure 9 as in Figure 8 refer to similar structures; the reader should refer to the preceding description in Figure 8 for a description of these structures. In contrast to the gas curtain system in Figure 8, the gas curtain system in Figure 9 features four radial gas passages 934, each spanning an arc of approximately 90°, and separated from adjacent radial gas passages 934 by small radial walls (not shown, but visible at the 12, 3, 6, and 9 o'clock positions). Such an arrangement can provide a substantially continuous radial gas curtain around the circumference of the turret 924, as the small radial walls provide only minimal interruptions to the gas flow. However, the small radial walls can provide a useful mechanism to help maintain a constant height relative to the radial gas passages 934.

[0076] Figure 10 is a top cross-sectional view of another exemplary gas curtain system. The gas curtain system in Figure 10 is similar to that in Figure 8, and the same last two digit callouts in Figure 10 as in Figure 8 refer to similar structures; the reader should refer to the preceding description in Figure 8 for a description of these structures. In Figure 10, there are a number of radial gas passages 1034, e.g., 72, each radial gas passage 1034 is a radially extending hole or channel. Such individual radial gas passages are arranged in a dense arrangement where they extend around the outer perimeter of the turret 1024, thereby supplying a generally continuous curtain of gas around the turret 1024 through the individual holes or channels.

[0077] It will be understood that the radial gas curtain system described above provides consistent, unchanging performance because one or more radial gas passages used in such a system direct the gas directly to the turret and are of a fixed size, i.e., the second gap of such radial gas passages cannot change over time (apart from potential thermal expansion effects). This is in contrast to a floating seal system in which a seal surrounding a shaft "floats" in space and is buffered by a thin layer of gas flowing along its outer, top, and bottom surfaces, in which the gap through which the gas flows can change in size due to the floating movement of the seal, resulting in changes in the flow conductance of the gap and fluctuations in the gas flow rate to such gap. In addition, the use of floating seals introduces further potential sources for specific generation, as the seal itself may potentially come into contact with other components, thereby generating particulate matter, which may then be discharged from the sealing area and possibly into the EFEM. Such radial gas curtain systems also offer several advantages over systems where the annular plenum around the shaft is supplied with pressurized gas through a small number of gas ports, e.g., two, four, or eight. In such systems, the gas flowing along the shaft through smaller annular outlet zones above and below the annular plenum may exhibit circumferential flow fluctuations due to pressure differences within the annular plenum, compared to the gas curtain systems described herein, as this generally directs the radial gas curtain radially inward, thereby creating a more uniform gas flow distribution.

[0078] A wafer handling robot possessing one or both of the above technologies may be part of a larger semiconductor processing tool that can be controlled by one or more controllers, as previously described.

[0079] A controller may be part of a system that includes the examples described above and may be operably connected to various valves, mass flow controllers, pumps, etc., thereby receiving information from and / or controlling such equipment. Such a system may include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as wafer pedestals, gas flow systems). These systems may be integrated with electronic equipment for controlling pre-processing, processing, and post-processing operations of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes include supplying various gases, setting temperatures (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting flow rates, setting fluid supply, and setting position and operation.

[0080] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0081] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools to which the controller is configured to interact or control. Therefore, as described above, the controller may be distributed, for example, by comprising one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0082] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0083] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant.

[0084] For the purposes of this disclosure, the term “fluidically connected” is used with respect to volumes, plenums, holes, etc., that can be connected to each other to form a fluid connection, similar to how the term “electrically connected” is used with respect to components that are connected to each other to form an electrical connection. The term “fluidically interposed” may be used, where used, to refer to a component, volume, plenum, or hole that is fluidically connected to at least two other components, volumes, plenums, or holes, so that any fluid flowing from one of those other components, volumes, plenums, or holes to the other or all of those components, volumes, plenums, or holes flows first through the “fluidically interposed” component before reaching the other or all of those components, volumes, plenums, or holes. For example, if a pump is fluidically interposed between a reservoir and an outlet, fluid flowing from the reservoir to the outlet flows first through the pump before reaching the outlet.

[0085] The phrases "for each <item> of one or more <items>" and "for each <item> of one or more <items>" should be understood, when used herein, to include both single-item groups and multi-item groups; that is, the phrase "for each..." should be understood as being used in a programming language to refer to each item in the population of items being referenced. For example, if the population of items being referenced is a single item, "each" refers only to that single item (despite the fact that the dictionary definition of "each" often defines a term that refers to "one of two or more things"), and does not mean that there must be at least two of those items. Similarly, the terms "set" or "subset" should not be considered by themselves to necessarily include multiple items, and it will be understood that a set or subset can include one or more members (unless the context indicates otherwise).

[0086] The use of ordinal labels, e.g., (a), (b), (c), ..., in this disclosure and claims should be understood not to indicate a specific order or sequence, where present (except to the extent to which such order or sequence is explicitly indicated). For example, if there are three steps labeled (i), (ii), and (iii), it should be understood that these steps can be performed in any order (or simultaneously, if not contraindicated) unless otherwise indicated. For example, if step (ii) involves handling an element formed in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves handling an element formed in step (ii), the reverse should be understood.

[0087] When terms such as “approximately,” “about,” “substantially,” and “nominal” are used in reference to quantities or similar quantifiable properties, unless otherwise indicated, they should be understood to include values ​​within ±10% of the specified value or relation (as well as the specified actual value or relation).

[0088] It should be understood that all combinations of the aforementioned concepts (provided that such concepts are not mutually contradictory) are considered to be part of the subject matter of the invention disclosed herein. In particular, all combinations of claimed subject matter appearing at the end of this disclosure are considered to be part of the subject matter of the invention disclosed herein. It should also be understood that any technical terms explicitly used herein, which may appear in any disclosure incorporated by reference, should be given meanings that best correspond to the specific concepts disclosed herein.

[0089] While the above disclosure focuses on several specific exemplary embodiments, it should be further understood that it is not limited to the examples described, but is equally applicable to similar variations and mechanisms, and such similar variations and mechanisms are also considered to be within the scope of this disclosure. It should be further understood that the above disclosure is intended to encompass at least the embodiments numbered below.

[0090] Embodiment 1: A device comprising one or more robot arms, a turret supporting the one or more robot arms, a linear movement mechanism supporting the turret, and a base supporting the linear movement mechanism, wherein the linear movement mechanism is configured to move the turret and the one or more robot arms along a first axis relative to the base, and the base includes an opening sized such that at least a first portion of the turret can pass through when the turret moves along the first axis, the opening having one or more radial gas passages extending substantially around the entire opening, the one or more radial gas passages being fixed in size, and a first gap existing between the internal edge of the opening and the first portion of the turret, the first gap extending around the outer circumference of the first portion of the turret.

[0091] Embodiment 2: The apparatus according to Embodiment 1, wherein the first gap between the first portion of the turret and the inner edge of the opening is not intervened by any structure around substantially the entire turret.

[0092] Embodiment 3: The apparatus according to Embodiment 1, wherein one or more radial gas passages have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0093] Embodiment 4: The apparatus according to Embodiment 1, wherein the one or more radial gas passages have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0094] Embodiment 5: The apparatus according to Embodiment 1, wherein one or more radial gas passages have a minimum width of 0.25 mm or less in a direction parallel to the first axis.

[0095] Embodiment 6: The apparatus according to Embodiment 1, wherein one or more radial gas passages are at least partially defined by one or more first surfaces and one or more second surfaces, the one or more first surfaces facing toward the one or more second surfaces and separated from the one or more second surfaces by a second gap.

[0096] Embodiment 7: The apparatus according to Embodiment 6, wherein the one or more first surfaces and the one or more second surfaces are perpendicular to the first axis.

[0097] Embodiment 8: The apparatus according to Embodiment 6, wherein each of the one or more first surfaces defines a first radial profile with respect to a second axis parallel to the first axis and centered on the opening, each of the one or more second surfaces defines a second radial profile with respect to the second axis, and each of the radial profiles, including the one or more first radial profiles and the one or more second radial profiles, lies in a corresponding plane that coincides with and is parallel to the second axis, each first radial profile defines an average first linear radial profile within ±30° from perpendicular to the second axis, and each second radial profile defines an average second linear radial profile within ±30° from perpendicular to the second axis.

[0098] Embodiment 9: The apparatus according to Embodiment 1, further comprising one or more plenum volumes, one or more gas inlets, and one or more flow control components configured to regulate the flow of gas to the one or more gas inlets, wherein each gas inlet is fluidically connected to one of the one or more plenum volumes, each of the one or more plenum volumes is fluidically connected to at least one of the one or more gas inlets, each of the one or more gas inlets is fluidically interposed between one of the one or more plenum volumes and one of the one or more flow control components, and each of the one or more plenum volumes is fluidly interposed between one of the one or more gas inlets and one or more radial gas passages.

[0099] Embodiment 10: The apparatus according to Embodiment 9, further comprising one or more gas sources, wherein one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more plenum volumes at a rate of 25 to 150 standard liters per minute, and the one or more radial gas passages are sized such that the gas from the one or more plenum volumes flows through the one or more radial gas passages at a rate of at least 5 m / s.

[0100] Embodiment 11: The apparatus according to Embodiment 1, wherein the first portion of the turret has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section having a diameter larger than the diameter of the first nominal circular cross-section.

[0101] Embodiment 12: The apparatus according to Embodiment 1, wherein the one or more radial gas passages include only a single gas passage that is in the form of a radial slit extending around the entire opening without interrupting continuity.

[0102] Embodiment 13: The apparatus according to Embodiment 1, wherein the first gap is 0.5 mm to 5 mm around the turret.

[0103] Embodiment 14: The apparatus according to Embodiment 1, further comprising a bellows, wherein a first end of the bellows is fixed to the end of the turret located within the base, and a second end of the bellows opposite to the first end is fixed to the surface of the base opposite to the opening, the bellows expands in response to the movement of the turret away from the surface of the base, and the bellows contracts in response to the movement of the turret toward the surface of the base.

[0104] Embodiment 15: The apparatus according to Embodiment 14, wherein the bellows has a first mean enclosing cross-sectional area when viewed along the first axis, and one or more outermost surfaces of the first portion of the turret define a second mean cross-sectional area when viewed along the first axis, and the first mean enclosing cross-sectional area is substantially equal to the second mean cross-sectional area.

[0105] Embodiment 16: The apparatus according to Embodiment 14, wherein the first portion of the turret is nominally circular and has a first nominal diameter, and the bellows has a plurality of pleats, each pleat having an inner diameter and an outer diameter, and the average of the inner and outer diameters of the pleats is substantially equal to the first nominal diameter.

[0106] Embodiment 17: The apparatus according to Embodiment 14, wherein the base has one or more vents on the surface of the base and in the region surrounded by the bellows when viewed along the first axis.

[0107] Embodiment 18: Apparatus comprising one or more robot arms, a turret supporting the one or more robot arms, a linear movement mechanism supporting the turret, a bellows, and a base supporting the linear movement mechanism, wherein the linear movement mechanism is configured to move the turret and the one or more robot arms along a first axis relative to the base, the base includes an opening sized such that at least a first portion of the turret can pass through when the turret moves along the first axis, the first end of the bellows is fixed to the first end of the turret located within the base, the second end of the bellows opposite to the first end of the bellows is fixed to a first surface of the base opposite to the opening, the bellows expand in response to the movement of the turret away from the surface of the base, and the bellows contract in response to the movement of the turret toward the surface of the base.

[0108] Embodiment 19: The apparatus according to Embodiment 18, wherein the turret is not connected to the second surface of the base opposite to the first surface of the base.

[0109] Embodiment 20: The apparatus according to Embodiment 18, wherein the bellows has a first mean enclosing cross-sectional area when viewed along the first axis, and one or more outermost surfaces of the first portion of the turret define a second mean cross-sectional area when viewed along the first axis, and the first mean enclosing cross-sectional area is substantially equal to the second mean cross-sectional area.

[0110] Embodiment 21: The apparatus according to Embodiment 18, wherein the first portion of the turret is nominally circular and has a first nominal diameter, and the bellows has a plurality of pleats, each pleat having an inner diameter and an outer diameter, and the average of the inner and outer diameters of the pleats is substantially equal to the first nominal diameter.

[0111] Embodiment 22: The apparatus according to Embodiment 18, wherein the base has one or more vents on the surface of the base and in the region surrounded by the bellows when viewed along the first axis.

[0112] Embodiment 23: The apparatus according to Embodiment 18, wherein the opening has one or more radial gas passages extending substantially around the entire opening, the one or more radial gas passages being of a fixed size, and a first gap existing between the internal edge of the opening and the first portion of the turret, the first gap extending around the outer circumference of the first portion of the turret.

[0113] Embodiment 24: The apparatus according to Embodiment 23, wherein the first gap between the first portion of the turret and the inner edge of the opening is not subject to any intervening structure.

[0114] Embodiment 25: The apparatus according to Embodiment 23, wherein one or more radial gas passages have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0115] Embodiment 26: The apparatus according to Embodiment 23, wherein one or more radial gas passages have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0116] Embodiment 27: The apparatus according to Embodiment 23, wherein one or more radial gas passages have a minimum width of 0.25 mm or less in a direction parallel to the first axis.

[0117] Embodiment 28: The apparatus according to Embodiment 23, wherein the one or more radial gas passages are at least partially defined by one or more first surfaces and one or more second surfaces, and the one or more first surfaces face toward the one or more second surfaces and are separated from the one or more second surfaces by a second gap.

[0118] Embodiment 29: The apparatus according to Embodiment 28, wherein the one or more first surfaces and the one or more second surfaces are perpendicular to the first axis.

[0119] Embodiment 30: The apparatus according to Embodiment 28, wherein each of the one or more first surfaces defines a first radial profile with respect to a second axis parallel to the first axis and centered on the opening, each of the one or more second surfaces defines a second radial profile with respect to the second axis, and each of the radial profiles, including the one or more first radial profiles and the one or more second radial profiles, lies in a corresponding plane that coincides with and is parallel to the second axis, each first radial profile defines an average first linear radial profile within ±30° from perpendicular to the second axis, and each second radial profile defines an average second linear radial profile within ±30° from perpendicular to the second axis.

[0120] Embodiment 31: The apparatus according to Embodiment 23, further comprising one or more plenum volumes, one or more gas inlets, and one or more flow control components configured to regulate the flow of gas to the one or more gas inlets, wherein each gas inlet is fluidically connected to one of the one or more plenum volumes, each of the one or more plenum volumes is fluidically connected to at least one of the one or more gas inlets, each of the one or more gas inlets is fluidically interposed between one of the one or more plenum volumes and one of the one or more flow control components, and each of the one or more plenum volumes is fluidly interposed between one of the one or more gas inlets and one or more radial gas passages.

[0121] Embodiment 32: The apparatus according to Embodiment 31, further comprising one or more gas sources, wherein one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more plenum volumes at a rate of 25 to 150 standard liters per minute, and the one or more radial gas passages are sized such that the gas from the one or more plenum volumes flows through the one or more radial gas passages at a rate of at least 5 m / s.

[0122] Embodiment 33: The apparatus according to Embodiment 23, wherein the first portion of the turret has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section having a diameter larger than the diameter of the first nominal circular cross-section.

[0123] Embodiment 34: The apparatus according to Embodiment 23, wherein the one or more radial gas passages include only a single gas passage that is in the form of a radial slit extending around the entire opening without interrupting continuity.

[0124] Embodiment 35: The apparatus according to Embodiment 23, wherein the first gap is 0.5 mm to 5 mm around the turret.

Claims

1. It is a device, One or more robotic arms, A turret supporting one or more robot arms, A linear movement mechanism supporting the turret, Bellows and, A base supporting the linear movement mechanism and Equipped with, The linear movement mechanism is configured to move the turret and one or more robot arms along a first axis relative to the base, The base includes an opening sized such that at least a first portion of the turret can pass through when the turret moves along the first axis. The first end of the bellows is fixed to the first end of the turret located within the base. The second end of the bellows, opposite to the first end of the bellows, is fixed to the first surface of the base opposite to the opening of the base. The bellows expand in response to the movement of the turret away from the surface of the base, The bellows contract in accordance with the movement of the turret toward the surface of the base. Device.

2. The apparatus according to claim 1, An apparatus in which the turret is not connected to a second surface of the base opposite to the first surface of the base.

3. The apparatus according to claim 1, The bellows has a first average enclosing cross-sectional area when viewed along the first axis, One or more outermost surfaces of the first portion of the turret define a second average cross-sectional area when viewed along the first axis. The first average enclosing cross-sectional area is substantially equal to the second average cross-sectional area. Device.

4. The apparatus according to claim 1, The first portion of the turret is nominally circular and has a first nominal diameter. The bellows has a plurality of pleats, Each pleat has an inner diameter and an outer diameter. The average of the inner and outer diameters of the pleat is substantially equal to the first nominal diameter. Device.

5. The apparatus according to claim 1, The apparatus wherein the base has one or more vents on the surface of the base and within the region surrounded by the bellows when viewed along the first axis.

6. The apparatus according to any one of claims 1 to 5, The opening has one or more radial gas passages extending substantially around the entire opening, The one or more radial gas passages are fixed in size, The first gap exists between the inner edge of the opening and the first portion of the turret. The first gap extends around the outer circumference of the first portion of the turret. Device.

7. The apparatus according to claim 6, The device wherein the first gap between the first portion of the turret and the inner edge of the opening does not have any structures intervening around it.

8. The apparatus according to claim 6, The apparatus wherein one or more radial gas passages have a minimum width of less than 1 mm in a direction parallel to the first axis.

9. The apparatus according to claim 6, The apparatus wherein one or more radial gas passages have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

10. The apparatus according to claim 6, The apparatus wherein one or more radial gas passages have a minimum width of 0.25 mm or less in a direction parallel to the first axis.

11. The apparatus according to claim 6, The one or more radial gas passages are at least partially defined by one or more first surfaces and one or more second surfaces. The one or more first surfaces face the one or more second surfaces and are separated from the one or more second surfaces by a second gap. Device.

12. The apparatus according to claim 11, An apparatus in which the one or more first surfaces and the one or more second surfaces are perpendicular to the first axis.

13. The apparatus according to claim 11, Each of the one or more first surfaces defines a first cross-sectional radial profile parallel to the first axis and with respect to a second axis centered on the opening. Each of the one or more second surfaces defines a second cross-sectional radial profile with respect to the second axis, Each of the radial cross-sectional profiles, including the one or more first radial cross-sectional profiles and the one or more second radial cross-sectional profiles, lies in a corresponding plane that is parallel to and coincides with the second axis. Each first cross-sectional radial profile defines the average first linear radial profile that lies within ±30° from perpendicular to the second axis. Each second cross-sectional radial profile defines an average second linear radial profile that lies within ±30° of perpendicular to the second axis. Device.

14. The apparatus according to claim 6, One or more plenum volumes, One or more gas inlets, One or more flow control components configured to adjust the gas flow to one or more gas inlets, Furthermore, Each gas inlet is fluidly connected to one of the one or more plenum volumes. Each of the one or more plenum volumes is fluidly connected to at least one of the one or more gas inlets, Each of the one or more gas inlets is fluidly interposed between one of the one or more plenum volumes and one of the one or more flow control components. Each of the one or more plenum volumes is fluidly interposed between one of the one or more gas inlets and one or more radial gas passages. Device.

15. The apparatus according to claim 14, Further comprising one or more gas sources, The one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more plenum volumes at a rate of 25 to 150 standard liters per minute, and the one or more radial gas passages are sized such that the gas from the one or more plenum volumes flows through the one or more radial gas passages at a rate of at least 5 m / s. Device.

16. The apparatus according to claim 6, The device wherein the first portion of the turret has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section having a diameter larger than the diameter of the first nominal circular cross-section.

17. The apparatus according to claim 6, The apparatus wherein the one or more radial gas passages include only a single gas passage in the form of a radial slit extending around the entire opening without interrupting continuity.

18. The apparatus according to claim 6, The apparatus wherein the first gap is 0.5 mm to 5 mm around the turret.

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