Monitoring equipment capable of measuring edge region characteristics

Abstract

Provided are a monitoring device capable of measuring characteristics of an edge region of a diagnosed object and a method for manufacturing the same. 【Solution means】The monitoring device according to the present invention includes a lower cover, a guide portion arranged on the lower cover, a circuit module on which at least one electronic element is arranged on the upper portion, and an upper cover arranged on the guide portion and the circuit module. A space is formed in the guide portion, and the circuit module is arranged in the space.

Description

Technical Field

[0001] The present invention relates to a monitoring device capable of measuring characteristics of an edge region of a diagnosed object and a method for manufacturing the same.

Background Art

[0002] An electrostatic chuck is a core component in a semiconductor device. Such an electrostatic chuck may have its temperature increased and decreased for each process, and the resistance component of the internal heating electrode may change, resulting in a decrease in temperature uniformity. Furthermore, the deviation of the inclination of the electrostatic chuck that may occur during the process of alternating the electrostatic chuck affects the plasma distribution. Also, the change in the electrical component of the internal electrode of the electrostatic chuck affects the electrostatic force, and the vibration of the semiconductor device affects the process result. When performing a semiconductor process or a display process in a state where the electrostatic chuck is not formed at a desired temperature or temperature distribution, the electrostatic force is not constant, the semiconductor device itself has vibration, or the electrostatic chuck or the shower head is twisted, especially when performing an etching process, it may cause a serious problem that defects occur on the wafer and all the wafers have to be discarded. In contrast, there is a monitoring device as shown in FIG. 1 for measuring the characteristics of an electrostatic chuck. The monitoring device has a structure in which a plurality of elements 102 such as sensors are arranged in the internal space of a concave-shaped wafer 100. Such a structure cannot measure the characteristics of the edge region of the electrostatic chuck by the side surface of the wafer 100.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of the present invention is to provide a monitoring device capable of measuring characteristics of an edge region of a diagnosed object and a method for manufacturing the same.

Means for Solving the Problems

[0004] To achieve the aforementioned objectives, a monitoring device according to one embodiment of the present invention includes a lower cover, guide portions arranged on the lower cover, a circuit module on which at least one electronic element is arranged on the upper part of a circuit board, and an upper cover arranged on the guide portions and the circuit module. Herein, a space is formed in the guide portions, and the circuit module is arranged within the space.

[0005] Another embodiment of the present invention provides a monitoring device comprising a lower cover, a circuit module arranged on the lower cover, a plurality of elements arranged on the circuit module, and an upper cover arranged on the plurality of elements. Here, the plurality of elements include a first element with a relatively low height and a second element with a relatively high height, and the heights of the first element and the second element are the same by filling the first element with a filler.

[0006] A monitoring device according to yet another embodiment of the present invention includes a lower cover, a circuit module arranged on the lower cover, at least one electronic element arranged on the circuit module, and an upper cover arranged on the electronic element. Herein, the sensor as the electronic element is characterized in that it is arranged on a region of the circuit module corresponding to the extreme edge region of the wafer used in the process.

[0007] A method for manufacturing a monitoring device according to one embodiment of the present invention is characterized by comprising the steps of: arranging a circuit board on a lower cover; arranging a first element of relatively low height and a second element of relatively high height on the circuit board; filling the first element with filler to make it the same height as the second element; and arranging an upper cover on the first element and the second element. [Effects of the Invention]

[0008] The monitoring device and method for manufacturing the same according to the present invention allow the sensor to be positioned in a region corresponding to the extreme edge region of a wafer used in a subsequent process, thereby enabling the monitoring device to measure the characteristics of the edge region of the object being diagnosed. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic diagram showing conventional monitoring equipment. [Figure 2] This is a diagram showing the arrangement of monitoring equipment related to one embodiment of the present invention. [Figure 3] This is an exploded view showing the structure of a monitoring device according to one embodiment of the present invention. [Figure 4] This is a diagram showing the arrangement of monitoring equipment related to one embodiment of the present invention. [Figure 5] This is a diagram showing the arrangement of monitoring equipment related to one embodiment of the present invention. [Figure 6] This is a drawing showing a guide member and a circuit board related to one embodiment of the present invention. [Figure 7] This is a drawing showing the coupling structure of multiple elements of a monitoring device according to one embodiment of the present invention. [Figure 8] This is a diagram showing the process of arranging multiple electronic elements according to one embodiment of the present invention. [Figure 9] This drawing shows a part of a monitoring device according to another embodiment of the present invention. [Figure 10] This is an exploded view showing the structure of a monitoring device according to another embodiment of the present invention. [Figure 11] This is a drawing showing the arrangement of guide members and circuit modules according to one embodiment of the present invention. [Modes for carrying out the invention]

[0010] In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “composed of” or “including” should not be interpreted as necessarily including all of the multiple components or steps described in the specification, and may not include some of those components or steps, or should be interpreted as including additional components or steps. Also, terms such as “...part” or “module” in this specification mean a unit that processes at least one function or operation, which may be embodied in hardware or software, or in a combination of hardware and software.

[0011] The present invention relates to a monitoring device that can measure the temperature distribution of an object under diagnosis, such as an electrostatic chuck, in a semiconductor process or a display process to determine an abnormal state of the electrostatic chuck. For example, it can measure the RF voltage, current, or power state in the plasma state of a semiconductor process or a display process. Furthermore, the monitoring device can determine the DC voltage of the electrostatic chuck to determine an abnormal state of the electrostatic chuck.

[0012] As another example, the monitoring device can measure the degree of tilt of the electrostatic chuck or the degree of tilt of the shower head by measuring the distance from the monitoring device to the upper electrode or the lower electrode. Furthermore, the monitoring device can measure the degree of vibration generated in the electrostatic chuck or semiconductor device.

[0013] According to one embodiment, the monitoring device of this embodiment can measure a wide area while having a thickness below a certain standard for automated transfer and transport using a robot. In particular, the monitoring device can measure the characteristics of the edge region of the object to be diagnosed, which corresponds to the extreme edge region of the wafer used in subsequent processes.

[0014] In an existing wafer type monitoring device as shown in FIG. 1, since a plurality of electronic elements 102 such as sensors are arranged inside a concave wafer 100, sensors cannot be arranged in the side thickness region of the wafer 100. As a result, it was impossible to measure the temperature etc. of the portion corresponding to the edge region of the wafer 100 in the electrostatic chuck, that is, the edge region corresponding to within 3 mm from the reference outer diameter of the wafer.

[0015] On the other hand, the cover of the monitoring device of the present invention has a flat shape instead of a concave shape, and sensors can be arranged in the vicinity of the edge of the cover, for example, in a region corresponding to within 3 mm from the outer diameter of the cover. As a result, the edge region of the electrostatic chuck can be sensed, that is, the sensing region can be widened.

[0016] A heater is arranged in the edge region of the electrostatic chuck, and heat or cooling is applied to the wafer on which an etching or vapor deposition process etc. is performed by such a heater, that is, the heater in the edge region of the electrostatic chuck affects the wafer. Therefore, it was necessary to measure the temperature etc. of the edge region of the electrostatic chuck, but it was impossible with conventional monitoring devices. In order to solve such problems, the monitoring device of the present invention proposes a structure that can also measure the characteristics of the edge region of the electrostatic chuck.

[0017] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. For the sake of convenience of explanation, it is assumed that the object measured by the monitoring device is an electrostatic chuck, but it is not limited thereto. FIG. 2 is a drawing showing an arrangement of monitoring devices according to an embodiment of the present invention, FIG. 3 is an exploded view showing a configuration of a monitoring device according to an embodiment of the present invention, and FIGS. 4 and 5 are drawings showing an arrangement of monitoring devices according to an embodiment of the present invention. FIG. 6 is a drawing showing a guide member and a circuit board according to an embodiment of the present invention, FIG. 7 is a drawing showing a coupling structure of a plurality of elements of a monitoring device according to an embodiment of the present invention, and FIG. 8 is a drawing showing a process of arranging a plurality of electronic elements according to an embodiment of the present invention. FIG. 9 is a drawing showing a part of a monitoring device according to another embodiment of the present invention, FIG. 10 is an exploded view showing a structure of a monitoring device according to another embodiment of the present invention, and FIG. 11 is a drawing showing an arrangement of a guide member and a circuit module according to an embodiment of the present invention.

[0018] Referring to FIG. 2, the monitoring device 200 of the present embodiment is arranged in a contact or non-contact manner on the electrostatic chuck 202 in the chamber, and the shower head 204 is arranged in a state separated from the monitoring device 200. In this case, the transfer path of the wafer in the apparatus is designed to be narrow. That is, since the interval between the shower head 204 and the electrostatic chuck 202 is designed to be narrow for plasma density or uniformity management, it is preferable that the monitoring device 200 is also designed to have a thickness below a reference value.

[0019] According to an embodiment, the monitoring device 200 of the present embodiment can arrange a plurality of electronic elements on a circuit module, fill a filler on the low electronic elements, and then polish the upper surface to design the thickness to be below the reference value. The monitoring device 200 determines the presence or absence of an abnormality in the electrostatic chuck 202 before the process starts. If it is determined that there is no abnormality in the electrostatic chuck 202, the monitoring device 200 is removed, and the actual process can be performed. For example, after the monitoring device 200 is removed, wafers for a deposition process, an etching process, an implant process, and a photo process can be arranged on the electrostatic chuck 202. Such monitoring equipment 200 can be placed on the electrostatic chuck 202 by using a robot without opening the chamber, and as a result the chamber can maintain a vacuum state.

[0020] According to one embodiment, the monitoring device 200 can also measure the temperature or tilt of the electrostatic chuck 202, the distance between the upper and lower electrodes in the semiconductor device, or the voltage and current in the plasma environment or the degree of vibration of the device. According to one embodiment, the monitoring equipment 200 can also be arranged inside the edge ring (400) on the electrostatic chuck 202, as shown in Figures 4 and 5.

[0021] Referring specifically to Figures 3 to 8, the monitoring device 200 of this embodiment includes a lower cover 300, a guide section 302, a circuit module 304, and an upper cover 306. The lower cover 300 protects the circuit module 304 and the multiple electronic elements on the circuit module 304 from the external environment, such as the plasma environment, and protects the chamber from contamination generated from the circuit module 304. According to one embodiment, the lower cover 300 may have a circular shape, which is the same shape as the wafer, as shown in Figure 3, or it may be planar and made of silicon or glass, which are materials commonly used in semiconductor processes. Alternatively, the lower cover 300 may be made of silicon carbide, sapphire, ceramic series such as Y2O3, YOF, Al2O3, or engineering plastics such as Teflon®, PEEK, or carbon fiber.

[0022] Since the lower cover 300 is the part that comes into direct contact with the electrostatic chuck 202, which is the object to be diagnosed, the lower cover 300 can have the same flatness as the silicon wafer. According to one embodiment, the lower cover 300 is bonded to the guide portion 302 or the circuit module 304 by utilizing an adhesive layer 308, as shown in Figure 7. Here, the adhesive layer 308 may be an adhesive such as an acrylic series or a silicone series. Alternatively, the lower cover 300 can be bonded to the guide portion 302 or the circuit module 304 using a thermosetting material such as epoxy or an insulating material such as SOG or SOD.

[0023] The guide section 302 protects the side of the circuit module 304 from the external environment, such as plasma, and, depending on the configuration, can improve the mechanical strength of the monitoring device 200. Furthermore, the section connecting the upper cover 306, the guide section 302, and the lower cover 300, i.e., the section where the upper cover 306, the guide section 302, and the lower cover 300 are all present, can also cool the circuit module 304 from heat sources. For this reason, the upper cover 306, the guide section 302, and the lower cover 300 can have the same or similar thermal conductivity as silicon.

[0024] According to one embodiment, the guide portion 302 is arranged on the lower cover 300, and a space into which the circuit module 304 is inserted can be formed. That is, the circuit module 304 can be inserted into the space of the guide portion 302 and fixed in place, and on the other side, the guide portion 302 can be structured to surround the circuit module 304. Such guide sections 302 can be formed from the same material as the silicon wafer, and can also be made from materials such as silicon carbide, sapphire, ceramic series such as Al2O3, YOF, and Y2O3, or engineering plastics such as PEEK, Teflon®, and carbon fiber.

[0025] According to one embodiment, the guide portion 302 can have the same or similar size and shape as the wafer, and as shown in Figure 6, one of the distances from the edge of the guide portion 302 to the space can have different values. For example, the distance from the edge of the guide portion 302 to the first part of the space can be a, and the distance from the edge of the guide portion 302 to the second part of the space can be b, which is greater than a. If the distance from the edge of the guide portion 302 to the space is always a, the guide portion 302 may become too thin and be damaged, and the strength of the monitoring device 200 cannot be reinforced. Therefore, while maintaining the distance from the edge of the guide portion 302 to a part of the space to be greater than or equal to b, the distance from the edge of the guide portion 302 to the other part of the space can be set to a depending on the position where the sensors 600 are arranged.

[0026] This means that if the distance from the edge of the guide portion 302 to the space is 'a', the corresponding portion of the circuit module 304 can be positioned close to the edge of the guide portion 302, as shown in Figure 6. By arranging the sensor 600 on the corresponding portion within such a circuit module 304, it is possible to measure the temperature of the electrostatic chuck corresponding to the wafer edge. For example, at least a portion of the sensor 600 can be arranged in the region of the circuit module 304 between the portion where the distance to the space is 'a' and the portion where the distance to the space is 'b'. According to one embodiment, the distance from the edge of the guide portion 302 to the space is 1.5 mm to 3 mm from the wafer edge corresponding to the extreme edge of the wafer. Of course, this length will vary depending on the size of the wafer, but the distance from the edge of the guide portion 302 to the space can correspond to the extreme edge region of the wafer used in subsequent processes.

[0027] From another perspective, the position of the sensors arranged on the circuit module 304 corresponds to the extreme edge region of the wafer. However, the mechanical strength of the guide portion 302, which has been weakened by processing a certain portion of the guide portion 302 to the extreme edge region, may be compensated for by other parts of the guide portion 302. According to one embodiment, the space of the guide portion 302 and the circuit module 304 each have a structure in which smaller squares are formed on each of the four sides of a larger square. Of course, the space and the circuit module 304 can also have other shapes, such as a circular shape. That is, the space and the circuit module 304 can have a variety of shapes, as long as the sensors can be arranged in positions corresponding to the extreme edge regions of the wafer.

[0028] In other embodiments, one of the distances from the edge of the guide portion 302 to the circuit module 304 has a different value. For example, the distance from the edge of the guide portion 302 to the first part of the circuit module 304 may be c, and the distance from the edge of the guide portion 302 to the second part of the circuit module 304 may be d, which is greater than c. In further embodiments, as shown in Figures 10 and 11, the circuit module 304 may have a circular or elliptical shape identical or similar to that of the wafer, and the guide portion 302 may include a side portion that protects the side of the circuit module 304 and a plurality of protrusions 1000 that protrude in a direction intersecting the side portion, for example, vertically. The plurality of protrusions 1000 may be spaced apart from each other, the circuit module 304 may also have a circular or elliptical shape identical or similar to that of the wafer, and the plurality of protrusions 1000 may cover a portion of the upper surface of the circuit module 304. In this case, sensors for sensing the edge of the object to be diagnosed may be arranged in the space 1010 between the plurality of protrusions 1000 of the circuit module 304, and electronic elements such as a microprocessor may be arranged outside the plurality of protrusions 1000 of the circuit module 304. In another view, the guide portion 302 covers the edge of the circuit module 304, but grooves 1010 are formed in the guide portion 302, and at least a portion of the sensors for sensing the edge of the object to be diagnosed may be arranged in the grooves 1010.

[0029] The circuit module 304 can be arranged on the lower cover 300 within the inner space of the guide section 302. Upon closer examination of such a circuit module 304, multiple electronic elements 602, such as a microprocessor, wireless communication device, wireless charging device, and sensors, can be arranged on the circuit board 800. In particular, some sensors 600 can be arranged on the circuit board 800 in areas corresponding to the extreme edge regions of the wafer.

[0030] According to one embodiment, as shown in Figure 8, the thickness of the circuit board 800 is below a certain level, which may make it susceptible to stress. To reinforce this, a fixing cover 402 can be arranged on the area excluding the multiple electronic elements 602 arranged on the circuit board 800 to improve flatness and prevent distortion of the circuit board 800. The fixing cover 402 can be made of the same or similar material as the upper cover 306 or lower cover 300, such as epoxy, silicon, silicon carbide, or glass. In this case, after arranging the fixing cover 402 on the circuit board 800, empty spaces will be created for the leads, soldering pads, etc., of the multiple electronic elements. In this case, a filler 404 can be used to fill these empty spaces, and the filler 404 can be a liquid material such as epoxy, thermosetting resin, or ceramic resin to improve the flatness of the circuit module 304.

[0031] According to one embodiment, the circuit module 304 includes a base substrate on which electrical wiring is connected and a filler substrate for protecting the plurality of electronic elements and improving flatness, and the base substrate and the filler substrate are bonded together by using an acrylic or silicon-based adhesive. According to one embodiment, the heights of at least some of the multiple electronic elements can be different, and therefore the filler 404 can be filled on top of the lower-height multiple electronic elements to make the heights of all the electronic elements the same. This is because if the heights of the multiple electronic elements are different, it may become difficult to join them with the upper cover 306.

[0032] For example, as shown in Figure 8, the sensor 600 may be relatively shorter than the microprocessor. In this case, the top of the sensor 600 can be filled with filler 404 so that the height of the sensor 600 and the microprocessor are the same. Here, the height of the upper end of the plurality of electronic elements can be the same as the height of the upper end of the guide portion 302. According to one embodiment, the filler 404 may be an insulator, such as epoxy, silicon, thermosetting resin, or ceramic resin. According to one embodiment, as shown in Figure 8, after applying filler 404 to some electronic elements, the upper surfaces of the plurality of electronic elements can be polished to make the upper surface of the circuit module 304 uniform. That is, filler that has filled above a certain height can be removed, and the removed portion is referred to as the polished layer 406. Depending on the situation, the surface of the electronic elements can also be polished during the polishing process.

[0033] According to one embodiment, the circuit module 304 may include a circuit board 800 on which electrical wiring is connected and a fixed cover 402 for protecting a plurality of electronic elements and improving flatness. Here, the circuit board 800 and the fixed cover 402 can be bonded together using an acrylic or silicone-based adhesive. According to one embodiment, as shown in Figure 9, a first EMI shielding layer 406 for electromagnetic wave shielding can be formed on the guide portion 302 and the plurality of electronic elements 602, and a second EMI shielding layer can be formed on the lower part of the circuit module 304. Here, the shielding layer can be formed by applying a liquid material or by forming a film. It can also be formed from materials such as gold, silver, copper, aluminum, or mixtures thereof. According to other embodiments, the EMI shielding layer may also be formed on the lower cover 300 and the upper cover 306.

[0034] According to one embodiment, as shown in Figure 9, a thermal barrier layer 408 can be additionally arranged on the bottom or top of the circuit module 304 to intentionally reduce the thermal conductivity from the heat source to the circuit module 304 and protect the multiple electronic elements 602 from thermal shock from low or high temperatures. In this case, the thermal barrier layer 408 may contain an aerogel with low thermal conductivity and may be arranged in the form of a liquid material or a film. The upper cover 306 can be bonded to the guide portion 302 or the circuit module 304 via an adhesive layer 308 to protect the element.

[0035] The adhesive layer 308 is an acrylic or silicone-based adhesive. On the other hand, the upper cover 306 can be bonded to the guide section 302 or the circuit module 304 using a thermosetting material such as epoxy or an insulating material such as SOG or SOD. On the other hand, the adhesive layer 308 between the lower cover 300 and the guide portion 302 or circuit module 304, and the adhesive layer 308 between the guide portion 302 or circuit module 304 and the upper cover 306, may be made of the same adhesive, or they may be made of adhesives with different properties.

[0036] To summarize, in the monitoring device 200 of this embodiment, at least a portion of the circuit module 304 is arranged within the space of the guide portion 302, and the sensors can be arranged in the circuit module 304 from the central region of the wafer to the region corresponding to the extreme edge region. As a result, the characteristics of the edge region of the electrostatic chuck 202 that applies heat to the edge region of the wafer can be measured.

[0037] On the other hand, while the above describes how to determine an abnormal state of the electrostatic chuck, the monitoring device 200 can also be used to diagnose the RF voltage, RF current, RF power, chuck tilt, showerhead tilt, and vibration level in the etching process, the temperature, RF voltage, RF current, RF power, chuck tilt, and showerhead tilt of the high-temperature chuck used in the deposition process, the temperature, tilt, or vibration level of the baking chuck in the photoprocess, and the temperature, tilt, or vibration level of the chuck used in the implantation device. If the chuck temperature is low or high, it can be measured directly by arranging the filled substrates, and in some cases, it can also be measured from a distance. Furthermore, the monitoring device 200 can also be used to measure the temperature, vibration, or tilt of the photomask used in the exposure process. In this case, the monitoring device 200 may have the same structure as described above.

[0038] In other embodiments, the monitoring device 200 does not need to be in physical contact with the electrostatic chuck 202. The monitoring device 200 can non-contactually monitor the temperature of the high-temperature chuck on the chuck's lift pins in order to diagnose the high-temperature chuck in the deposition process. Furthermore, the monitoring device 200 can also be used to diagnose an object being diagnosed using a light sensor that detects light or an electrical sensor that measures electrical components. In this case, in order to incorporate the light sensor, the monitoring device 200 with the structure described above may be used, and a light receiving sensor for receiving light may be included, and a hole through which light can pass may be formed in the monitoring device 200. Furthermore, in order to incorporate the aforementioned electrical sensor, the monitoring device 200 can have an electrical sensor built inside, and holes that allow electrical components to pass through can be formed in the monitoring device 200.

[0039] Furthermore, a displacement-measuring sensor may be built into the monitoring device 200 to measure the tilt, and holes that allow electrical or optical components to pass through may be formed in the monitoring device 200. On the other hand, the components of the aforementioned embodiment can be easily understood from a process perspective. That is, each component can be understood as its own process. Furthermore, the process of the aforementioned embodiment can be easily understood from the perspective of the components of the apparatus. The embodiments of the present invention described above are disclosed for illustrative purposes only, and a person skilled in the art with ordinary skill in the invention will know that various modifications, changes, and additions are possible within the spirit and scope of the invention, and such modifications, changes, and additions should be considered to fall within the scope of the claims below. [Explanation of symbols]

[0040] 100 wafers 102 elements 200 monitoring devices 202 Electrostatic Chuck 204 Shower Head 300 Lower cover 302 Guide Section 304 Circuit Module 306 Top cover 308 Adhesive layer 400 Edge Ring 402 Fixed cover 404 Filler 406 Polishing layer, first EMI shielding layer 408 Thermal barrier layer 600 sensors 602 Electronic elements 800 Circuit Boards 1000 protrusion 1010 Space, groove

Claims

1. The bottom cover and Guide sections arranged on the lower cover, A circuit module in which at least one electronic element is arranged on top of the circuit board, An upper cover arranged on the guide portion or the circuit module, Includes, A space is formed in the guide portion, and at least a portion of the circuit module is arranged within the space. The guide portion surrounds and supports the circuit module, and includes a side portion that protects the side of the circuit module, and a plurality of protrusions that extend longitudinally from the side portion and cover a portion of the upper surface of the circuit module. The monitoring device is characterized in that the plurality of protrusions are spaced apart from each other, sensors for detecting an object to be diagnosed are arranged between the plurality of protrusions in the circuit module, and electronic elements other than the sensors are arranged outside the protrusions in the circuit module.

2. The first distance from the edge of the guide portion to one point in the space and the second distance from the edge to another point in the space are different. The first distance is smaller than the second distance. The monitoring device according to claim 1, characterized in that at least a portion of the sensors as electronic elements are arranged in a region between a portion of the circuit module corresponding to one point in the space and a portion corresponding to another point in the space, in order to measure the edge region of the object to be diagnosed.

3. The monitoring equipment is arranged on an electrostatic chuck, The monitoring equipment is removed after measuring the characteristics of the electrostatic chuck, and after the monitoring equipment is removed, a wafer for the process is placed on the electrostatic chuck. The monitoring device according to claim 2, characterized in that the sensors are arranged in a region of the circuit module corresponding to the extreme edge region of the wafer.

4. The lower cover and the upper cover each have a planar shape, and the space or the circuit module each have a structure in which a relatively large shape is combined with a relatively small shape. The monitoring device according to claim 1, characterized in that the sensor as an electronic element is arranged on the relatively small shape.

5. A first element of relatively low height and a second element of relatively high height are arranged on the circuit module. The monitoring device according to claim 1, characterized in that after applying a filler to the first element, it is polished to the same height as the second element, and the first element with the filler applied, the second element, and the guide portion are all at the same height.

6. The monitoring device according to claim 5, characterized in that a first EMI shield layer is formed on the coated first element and the second element, and a second EMI shield layer is formed on the lower part of the circuit module.

7. The monitoring device according to claim 1, characterized in that an EMI shielding layer for electromagnetic wave shielding is formed on the upper cover and the lower cover, respectively.

8. The lower cover, the guide portion, or the upper cover are each made of the same material as the silicon wafer, such as silicon carbide, sapphire, or ceramic series Y ２ O ３ YOF, Al ２ O ３ Alternatively, the monitoring device according to claim 1, characterized in that it is formed of an engineering plastic such as Teflon®, PEEK, or carbon fiber.

9. The circuit module includes a circuit board, electronic elements arranged on the circuit board, and a fixed cover arranged on the circuit board in an area excluding the electronic elements. The monitoring device according to claim 1, characterized in that the fixed cover is formed of epoxy, silicone, silicon carbide, or glass.

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