Integrated configuration of different light-emitting structures on the same substrate

Abstract

To provide technique and a device for manufacturing a large number of compact light emitting elements by integrating semiconductor structures for generating light of different colors on the same substrate.SOLUTION: A device includes a substrate 510 having one or more buffer layers 505 composed of a material including GaN, and generates light. The device also includes a plurality of light emitting structures 520a, 520b, 520c that are epitaxially grown on the same surface of an uppermost buffer layer of the substrate 510, each light emitting structure having an active region 530 that is parallel to the surface and terminated in a lateral direction, and the active regions of the different light emitting structures being configured to directly generate light of different colors. The device also includes a p-type doped layer 540 that is disposed on the active region 530 of each light emitting structure and composed of a material including GaN. The device may be connected to a part of a light field display or a backplane of a light field display.SELECTED DRAWING: Figure 5A

Description

Cross-reference of related applications

[0001] This patent application is titled "Integrated configuration of different light-emitting structures on the same substrate" and is 202 U.S. Nonprovisional Patent Application No. 16 / 841,119, filed on April 6, 2000, and "Same Base Titled "Integrated configuration of different light-emitting structures on a plate," the patent application was filed on April 12, 2019. Priority is claimed based on U.S. Provisional Patent Application No. 62 / 833,072, and the contents of those applications are as follows: The entirety of this is incorporated herein by reference. [Background technology]

[0002] Aspects of this disclosure generally relate to the structure of light-emitting elements used in various types of displays. Which light-emitting structure, more specifically, is an integrally constructed structure that generates light of different colors on the same substrate? It relates to a light-emitting structure.

[0003] To provide a better user experience and realize new applications As the number of light-emitting elements (e.g., pixels) used in displays continues to increase, Further increasing the number of pixels presents challenges from both a design and manufacturing perspective, both in terms of pixel count and density. In order to increase the number of users, it is necessary to miniaturize light-emitting elements more than ever before. The potential of using diodes (LEDs) is attracting more attention. However, high pixel count, High density, capable of generating the different colors required for a color display (e.g., red, green, blue). Effective and efficient technologies for manufacturing small, capable LEDs are not widely available. Traditional technology is complicated, time-consuming, and costly. Furthermore, light field displays More advanced displays, such as Ray, require stricter requirements in both operation and size. Using these small LEDs in a ray architecture is quite difficult.

[0004] Therefore, the semiconductor structure that generates light of different colors on the same substrate is to be constructed as a single unit. (For example, a single integrated semiconductor device) can effectively power a large number of small light-emitting elements. Technologies and devices that enable efficient design and manufacturing are desired. [Overview of the project]

[0005] To gain a basic understanding of these embodiments, one or more simplified embodiments are described below. A summary is presented. This summary is not a comprehensive overview of all possible aspects, but rather an overview of all aspects. This does not identify key or important elements of the aspects, but rather some or all aspects of the aspects. This does not clarify the scope of the term. Its purpose is to serve as a prelude to the more detailed explanation that will be presented later. As a result, by presenting some concepts of one or more embodiments in a simplified form. be.

[0006] In one aspect of this disclosure, one or more buffer layers made of a GaN-containing material are A device for generating light having a substrate is described. The device also, Multiple light-emitting structures epitaxially grown on the same surface of the uppermost buffer layer of the substrate Each light-emitting structure has an active region that is parallel to the surface and terminated laterally, The active region of the light-emitting structure is configured to directly generate light of different colors. The device also has a p-type GaN component placed on the active region of each light-emitting structure. The device comprises a p-type doped layer composed of a doped material. It may be a part of the display and may be connected to the backplane of the light field display.

Brief Description of the Drawings

[0007] The accompanying drawings merely illustrate several embodiments and are not to be considered as limiting the scope. [Figure 1] FIG. 1 shows an example of a display and a source of the display content according to an aspect of the present disclosure. [Figure 2A] FIG. 2A shows an example of a display having a plurality of pixels according to an aspect of the present disclosure. [Figure 2B] FIG. 2B shows an example of a light field display having a plurality of pixels according to an aspect of the present disclosure. [Figure 2C] FIG. 2C shows an example of a light field display having a plurality of pixels according to an aspect of the present disclosure. [Figure 2D] FIG. 2D shows an example of a cross-sectional view of a part of a light field display according to an aspect of the present disclosure. [Figure 3] FIG. 3 shows an example of a backplane in which an array of light-emitting elements is incorporated according to an aspect of the present disclosure. [Figure 4A] FIG. 4A shows an example of an array of light-emitting elements in a pixel according to an aspect of the present disclosure. [Figure 4B] FIG. 4B shows an example of a pixel having sub-pixels according to an aspect of the present disclosure. [Figure 5A] FIG. 5A shows a cross-sectional view of an example of a plurality of light-emitting structures integrally formed on a substrate according to an aspect of the present disclosure. [Figure 5B] FIG. 5B shows a cross-sectional view of another example of a plurality of light-emitting structures integrally formed on a substrate according to an aspect of the present disclosure. [Figure 6A] FIG. 6A shows a cross-sectional view of an example of a device having a plurality of light-emitting structures according to an aspect of the present disclosure. [Figure 6B] ​​FIG. 6B shows a cross-sectional view of the device of FIG. 6A connected to a backplane according to an aspect of the present disclosure. [Figure 6C] FIG. 6C shows a cross-sectional view of another example of a device having a plurality of light-emitting structures according to an aspect of the present disclosure. [Figure 6D] FIG. 6D shows a cross-sectional view of the device of FIG. 6C connected to a backplane according to an aspect of the present disclosure. [Figure 7A] FIG. 7A shows a cross-sectional view of an example of a light-emitting structure according to an aspect of the present disclosure. [Figure 7B] FIG. 7B shows a cross-sectional view of an example of a light-emitting structure according to an aspect of the present disclosure. [Figure 7C] FIG. 7C shows a cross-sectional view of an example of a light-emitting structure according to an aspect of the present disclosure. [Figure 8A] FIG. 8A shows a cross-sectional view of an array or group of one type of light-emitting structure according to an aspect of the present disclosure. [Figure 8B] FIG. 8B shows a cross-sectional view of an array or group of one type of light-emitting structure according to an aspect of the present disclosure. [Figure 8C] FIG. 8C shows a cross-sectional view of an array or group of another type of light-emitting structure according to an aspect of the present disclosure. [Figure 8D] FIG. 8D shows a cross-sectional view of an array or group of another type of light-emitting structure according to an aspect of the present disclosure. [Figure 9A] FIG. 9A shows schematic diagrams of various examples of the arrangement of devices for generating light in a display according to an aspect of the present disclosure. [Figure 9B] FIG. 9B shows schematic diagrams of various examples of the arrangement of devices for generating light in a display according to an aspect of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The detailed description set forth below in connection with the appended drawings is intended as a description of various configurations and is not intended to represent the only configuration in which the concepts described herein may be implemented. Rather, the concepts described herein may be implemented in many different configurations and are presented for the purpose of providing a thorough understanding of the principles and concepts. No. Detailed explanations include specific details to ensure a thorough understanding of various concepts. However, these concepts can be implemented even without their specific details. It will be obvious to those. In some cases, to avoid obscuring such concepts, The components of knowledge are represented in the form of block diagrams.

[0009] As mentioned above, we aim to provide a better user experience and new applications To achieve this, the number of light-emitting elements (e.g., pixels) in the display is increased more than ever before. There is a need to increase the number, and further increasing that number is the challenge. Both pixel count and density. To increase this, it is necessary to miniaturize light-emitting elements more than ever before, and small LEDs The potential for using (for example, micro-LEDs) is attracting more attention. However, high resolution We manufacture small LEDs that are prime number, high density, and capable of generating different colors (e.g., red, green, blue). The manufacturing technology is limited, and using conventional methods is complicated, time-consuming, and costly. More advanced display architectures, such as those for world displays, use small LEDs. While its use may be valid in some cases, the requirements for such displays are not suitable for small displays. Implementing LEDs is quite difficult. Therefore, a large number of small LEDs that produce light of different colors are required. The integral construction of optical structures on the same substrate (for example, a single integrated semiconductor device New technologies and devices that can achieve this are desired.

[0010] This disclosure provides examples of such technology and apparatus in relation to the figures described below. For example, Figures 1 to 4B show a device that can implement an integrally configured light-emitting structure. This section provides general information regarding examples of sprays. Figures 5A through 9B show such examples. This describes various aspects of examples of structurally constructed light-emitting structures.

[0011] In this disclosure, the terms “light-emitting structure” and “light-emitting element” are to be used interchangeably. The term "luminescent structure" refers to a single structure configured to produce light of a specific color. It can be used to describe the structural arrangement of components (e.g., materials, layers, composition). Also, the terms "light-emitting element," "light-emitting body," or simply "emitter" are more common. It is sometimes used to indicate a single component.

[0012] Figure 1 shows the content / data 125 (e.g., image content, video) from source 120. Schematic diagram 100 shows an example of a display 110 that receives content, or both. The display 110 may have one or more panels 150 (1 (As shown,) each panel 150 in the display 110 is either an emissive panel or a reflective panel. It is a panel. The panel consists of light-emitting or light-reflecting elements arranged in a predetermined configuration or array. In addition to having a backplane for driving light-emitting or light-reflecting elements It may be provided. If a light-emitting panel is used, the light-emitting panel shall have multiple light-emitting elements. These light-emitting elements may be one or The LED may be composed of multiple semiconductor materials. The LED may also be an inorganic LED. Good. LEDs include, for example, microLEDs (microLEDs, mLEDs, or μLEDs). It may also be called a liquid light-emitting element. Other display technologies that make up a light-emitting element include liquid Examples include LCD (crystal display) technology or organic LED (OLED) technology. LEDs, which produce light of different colors, are integrated onto the same semiconductor substrate for efficient manufacturing. It may be configured as follows.

[0013] Display 110 offers ultra-high resolution performance (for example, supporting resolutions of 8K or higher), high Dynamic range (contrast) performance, or light field performance, or these It may have a combination of the following performances. Display 110 has light field performance If it has and can operate as a light field display, the display 110 is multiple It may have a number of pixels (for example, superluxels), and each pixel is a light-inducing It has an optical guide element and an array of light-emitting elements (e.g., a subluxel). (For example, a subluxel) is integrally constructed on the same semiconductor substrate, and the light-emitting elements within the array The child is placed in a separate group (e.g., Luxel) and is displayed in a light field display. It provides multiple views supported by (see, for example, Figures 2B to 3). In light field displays, the number and density of light-emitting elements are important for high-resolution displays. Even for gameplay, the screen size can be orders of magnitude larger than conventional displays.

[0014] Source 120 integrates content / data 125 into the display 110. The display processing unit 130 may be provided to the display 110. To display the image or video content within Content / Data 125, modify the image or video content. It may be configured as follows: The display processing unit 130 processes the image or video content. Display memory 135 for storing information used is also shown. The memory 135 or a part thereof may be integrated into the display processing unit 130. The set of tasks that can be executed by the processing unit 130 is a light field application. Related to color management, data conversion, and / or multiview processing operations. The task may include the following: The display processing unit 130 times the processed content / data. It may also be supplied to the timing controller (TCON) 140, thereby providing the timing controller The Trolla (TCON) 140 provides appropriate display information to the panel 150. Panel 150 (also called a display panel) contains light-emitting elements within Panel 150. Alternatively, it may include a backplane for driving the light-reflecting elements.

[0015] Schematic diagram 200a in Figure 2A shows multiple pixels, typically called pixels or display pixels. The image shows a display 210 having light-emitting elements 220. As described above, these Light-emitting elements can be configured integrally on the same substrate, with different colored light-emitting elements being able to generate different colors. It may be composed of a specific structure (for example, a semiconductor structure). The light-emitting element 220 is Although shown separately for illustrative purposes, they are generally formed in a sequence and adjacent to each other. This provides a high-resolution display 210. The display 210 is shown in schematic Figure 1. This may be an example of a display 110 of 00.

[0016] In the example shown in Figure 2A, the light-emitting element 220 may be configured or arranged in an N×M array. N is the number of rows of pixels in the array, and M is the number of columns of pixels in the array. Such array expansion Most of it is shown on the right side of display 210. For smaller displays, array Examples of iss include N≧10 and M≧10, and N≧100 and M≧100. For large displays, examples of array sizes include N≧500 and M≧500, N≧ 1,000 and M≧1,000, N≧5,000 and M≧5,000, N≧10,0 Examples include 00 and M≧10,000, and even larger array sizes are possible.

[0017] Although not shown in the diagram, the display 210 has an array of light-emitting elements 220, in addition to a drive for the array. It may have a backplane for low power consumption and high frequency. The backplane may have a backplane for low power consumption and high frequency It may be configured to operate within a certain bandwidth.

[0018] Schematic diagram 200b in Figure 2B shows a light having multiple pixels or superaxels 225. This shows a field display 210a. In this disclosure, the terms "pixel" and "s The term "perluxel" describes a similar structural unit within a light field display. It may be used interchangeably to illuminate. The light field display 210a is This could be an example of a display 110 having light field performance, as shown in schematic diagram 100. The light field display 210a may be used for different types of applications. The size can vary depending on the application. For example, the Light Field Display 210 Examples of A include watches, nearsightedness applications, phones, tablets, and laptops. When used as a display for computers, monitors, televisions, and signs, different It may have a size that allows for light field displays 2 depending on the application. Pixels 225 within 10a are arranged in an array, grid, or other type of ordered, different sizes. It can be composed of the arrangement of pixels. Pixel 225 of the light field display 210a is one Alternatively, it can be distributed across multiple display panels.

[0019] As shown in the example in Figure 2B, the pixels 225 can be configured or arranged in a P×Q array. In this array, P is the number of rows of pixels in the array, and Q is the number of columns of pixels in the array. The enlarged portion is shown on the right side of the light field display 210a. For the spray case, examples of array sizes include P≧10 and Q≧10, and P≧100 and Q One example is ≥100. For large displays, an example of array size is P ≥ 5 00 and Q≧500, P≧1,000 and Q≧1,000, P≧5,000 and Q We can give examples such as ≥5,000, P ≥ 10,000, and Q ≥ 10,000.

[0020] Each pixel 225 in the array is itself a light-emitting element 220 or (shown further to the right) sub It has a laxel array or grid. In other words, each pixel 225 has multiple light-emitting elements 2 Pixel 2 25 uses light of different colors (for example, red (R) light, green (G) light, and blue (B) light) When the generated semiconductor substrate includes different LEDs as light-emitting elements 220, the light function The field display 210a is an integrated RGB LED Superluxel or It can be said that it is made from.

[0021] Corresponding optical element 215 (for example, the integrated imaging element shown in schematic diagram 200c in Figure 2C) Each pixel 225 in the light field display 210a, including the lens, is a display It can represent the minimum pixel size limited by the resolution of (i). The arrangement or grid of light-emitting elements 220 of the pixel 225 is a light-guiding optical element corresponding to that pixel. It can be made smaller than 215. However, in practice, the light-emitting element of pixel 225 The size of the 220 array or grid is the size of the corresponding optical element 215 (for example, This may be similar to the diameter of a microlens or miniature lens, which is between 225 pixels. The pitch may be similar to or the same as 230.

[0022] As described above, an enlarged view of the arrangement of the light-emitting elements 220 of pixel 225 is shown on the right of schematic diagram 200b. As shown on the side, the arrangement of the light-emitting elements 220 can be an X × Y arrangement, where X is the array. Y is the number of rows of the light-emitting elements 220 within the array, and Y is the number of columns of the light-emitting elements 220 within the array. Examples of cases include X≧5 and Y≧5, X≧8 and Y≧8, X≧9 and Y≧9, and X≧1 0 and Y≧10, X≧12 and Y≧12, X≧20 and Y≧20, and X≧25 And Y≧25 can be cited. In one example, the X×Y array has 81 light-emitting elements. Alternatively, it may be a 9x9 array including subluxels 220.

[0023] In each pixel 225, the light-emitting element 220 in the array is a separate and clearly distinguishable light-emitting element. It includes 220 groups (see, for example, the group of light-emitting elements 260 shown in Figure 2D). These light-emitting elements 220 are assigned based on spatial and angular proximity. , or grouped (for example, logically grouped), Lightfield Dis Different factors contribute to the generation of the light field view provided to the viewer by Play 210a. It is configured to generate a light output (e.g., a directional light output). Sublux or The grouping of light-emitting elements into the Luxel 220 does not need to be unique. For example, assembly Sub-luxels to specific luxels during or after manufacturing to optimize the display experience. A mapping may exist. A similar remapping may occur on a display once it has been placed. Therefore, for example, the aging of light-emitting elements of different colors and / or the aging of light-inducting optical elements. This can be done taking into account the aging of various components or elements of the display, including chemical changes. In this disclosure, the terms “group of light-emitting elements” and “luxel” are used to mean light-emitting elements. It is interchangeable to describe similar structural units within a field display. Yes. Light fees are generated by the contribution of various groups of light-emitting elements or luxels. A continuous view can be perceived by the viewer as a continuous or discontinuous view. (See above) As shown above, the structures of various light-emitting elements that produce different colored light are all based on the same semiconductor substrate. They may also be integrated into a single structure, which will be explained in more detail below.

[0024] Each group of light-emitting elements 220 in the array of light-emitting elements 220 (schematic diagram 200b in Figure 2B, to the right) The terminal) emits light of at least three different colors (for example, red light, green light, blue light, or... It includes multiple light-emitting elements that generate white light. In one example, these groups or rac Each cell has at least one light-emitting element 220 that generates red light, and a green light-emitting element It includes one light-emitting element 220 and one light-emitting element 220 that generates blue light. It may include at least one light-emitting element 220 that generates white light.

[0025] Schematic diagram 200c in Figure 2C shows a pixel 22 equipped with the corresponding optical induction element 215 described above. Another example of the light field display 210a is shown, which displays a magnified view of part of the array of 5. The pitch 230 can represent the interval or distance between pixels 225, and the optical element is a light-guided optical element. The size of the child 215 (for example, the size of a microlens or miniature lens) may be such.

[0026] Schematic diagram 200d in Figure 2D illustrates some of the structural units described herein. , light field display (for example, light field display 210a) A partial cross-sectional view is shown. Here, Figure 1 is configured as a light field display. For example, schematic diagram 200d shows three adjacent pixels or superluxels 2 This shows 25a, each having a corresponding optically induced element 215. In this example, The light-guiding optical element 215 can be considered separate from the pixel 220a, but other examples Therefore, the light-guiding optical element 215 can be considered as part of the pixel.

[0027] As shown in Figure 2D, each pixel 225a has multiple light-emitting elements 220 (for example, multiple Subluxels include several different types of light-emitting elements 220 (for example, several Subluxels can be grouped into group 260 (for example, within a luxel). The group or luxel is the rightmost group or luxel within the central pixel 225a. As shown by the cell, it generates various components that contribute to a specific ray element 255. This is possible. Ray elements generated by different groups or luxels within different pixels. 255 is the view perceived by viewers who are far from the light field display. They will understand that they can contribute.

[0028] The additional structural units shown in Figure 2D are of the same type as pixel 225a (for example, the same This is the concept of sub-pixels 270 representing a group of light-emitting elements 220 (which generate light of the same color).

[0029] Figure 2D also shows pixel 225 (Superluxel), group 260 (Luxel), and Each of the sub-pixels 270 is configured to generate light of different colors, and various types of light are used. The optical element 220 (or at least each structure configured to generate light) This supports the concept of being integrally configured on the same or a single semiconductor substrate. be.

[0030] Schematic diagram 300 in Figure 3 shows an example of a backplane in which an array of light-emitting elements is integrated. This shows that schematic diagram 300, like schematic diagram 200d in Figure 2D, shows a cross-sectional view. Figure 300 shows the light-emitting element (subluxel) 220 and the group 26 of light-emitting elements (luxels). This shows 0, a pixel (superluxel) 225a, and an optical induction element 215. How do various light rays 255 from the pixels contribute to views A and view B, etc. It also shows whether different views can be generated. Furthermore, pixel 225a The light-emitting elements 220 form a larger array 330 (for example, a display panel), The array 330 is connected to the backplane 310 via the connector 320. Furthermore, the backplane 310 is configured to drive each of the light-emitting elements 220. Yes, they are.

[0031] Figure 4A shows a schematic diagram 400a illustrating various details of one embodiment of pixel 225. For example, pixel 225 (for example, Superluxel) is each light-guiding optical element 2 Multiple light-emitting elements, each having 15 (indicated by a dashed line), are integrally formed on the same semiconductor substrate. Includes an array of sub-cells 220 (e.g., subluxels) or a grid 410. Optical induction element 21 5 may be the same size as or similar to array 410, or arranged as shown in the figure. It may be slightly larger than column 410. Some of the sizes shown in the figures of this disclosure are It is exaggerated for illustrative purposes and is not an accurate representation of the actual size or relative size. Please understand that you do not need to be considered as such.

[0032] Multiple light-emitting elements 220 within array 410 are of different types for generating light of different colors. It includes multiple light-emitting elements and multiple views generated by the light field display. - Placed within separate groups 260 (e.g., separate Luxels) that provide different contributions to Each of the light-emitting elements 220 within the array 410 is integrally mounted on the same semiconductor substrate. It can be configured.

[0033] As shown in Figure 4A, array 410 has two or more adjacent pixels or It has a geometric arrangement that allows for close placement. The geometric arrangement is hexagonal (shown in Figure 4A). It can be either a square or a rectangle.

[0034] Although not shown in the illustration, pixel 225 in Figure 4A has multiple light-emitting elements 220 within it. A corresponding electronic means (e.g., back) including multiple drive circuits configured to drive It may have (in the plane).

[0035] Figure 4B shows schematic diagram 400b illustrating various details of other embodiments of pixel 225. Yes. For example, pixel 225 (e.g., Superluxel) in Figure 4B is on the same semiconductor substrate. It includes a plurality of sub-pixels 270 integrally configured on top. Each sub-pixel 270 is a light-inducing It has multiple light-emitting elements, each containing an optical guide element 215 (shown by a dashed line), which generate light of the same color. Includes an array or grid 410a of 220 (e.g., multiple subaxels). Child 215 may be the same size as or similar to array 410a, or as shown in the figure. The array may be slightly larger than array 410a. In pixel 225, sub-pixel 270 One of our light-guiding optical elements 215 is based on multiple light-emitting elements 220 within its sub-pixel 720. It is configured to optimize the color dispersion of the light produced. Furthermore, it is optically stimulated optics. The element 215 can be aligned and combined with the array 410a of each subpixel 270.

[0036] The light-emitting elements 220 of the sub-pixels 720 are arranged in separate groups 260 (e.g., luxels). As shown in Figure 4B, in one example, each group 260 is the same as the sub-pixel 270. From there, multiple light-emitting elements 220 arranged together (for example, the same position within each subpixel) It may include (placement). However, as mentioned above, different types of various light-emitting elements 220 The mapping to Loop 260 can be changed during manufacturing and / or operation. Each of the various subpixels 270 and light-emitting elements 220 are integrally mounted on the same semiconductor substrate. It can be configured.

[0037] As shown in Figure 4B, array 410a has two or more adjacent subpixels. It has a geometric arrangement that allows for such arrangement. The geometric arrangement is a hexagon (shown in Figure 4B). It can be either a square or a rectangle.

[0038] Although not shown in the illustration, pixel 225 in Figure 4B has multiple light-emitting elements 220 within it. A corresponding electronic means (e.g., back) including multiple drive circuits configured to drive It may have (in the plane). In some examples, one or more common drive circuits are used. This allows each of the sub-pixels 270 to be driven.

[0039] As described above, Figures 1 to 4B show an integrally constructed light-emitting structure (for example, a light-emitting element) This describes general information regarding examples of displays in which the structure of child 220 may be implemented. The following explanation of Figures 5A to 9B describes such an integrally constructed light-emitting structure. This provides details on various aspects of the example.

[0040] Schematic diagram 500a in Figure 5A is integrally formed on a substrate 510 (for example, a semiconductor substrate). This shows a cross-sectional view of an example of the light-emitting structures 520a, 520b, and 520c. The substrate 510 is It may be part of a device, or it may consist of multiple layers. For example, substrate 5 10 consists of the lower layer 503 (for example, a layer made of sapphire) and one placed above the lower layer. Alternatively, it may have multiple buffer layers or initiation layers 505. Layer 505 consists of, for example, a first buffer layer 505 made of undoped GaN and n-type doped It may also have a second buffer layer 505 made of GaN, the latter being on the substrate 510. Layers are formed. In some examples, the second buffer layer 505 is the first buffer layer 505. It may be thicker than that. The layer beneath substrate 510 does not need to be a semiconductor layer, but one or more layers may be present. Is the upper layer (for example, the buffer layer or initialization layer 505) a semiconductor layer? Substrate 510 is sometimes called a semiconductor substrate.

[0041] On the outermost surface of the substrate 510 (for example, the surface of the uppermost buffer layer 505), optional and Then, for example, the arrangement or position of various light-emitting structures 520a, 520b, 520c is determined. A dielectric material (not shown) is deposited to grow light-emitting structures 520a, 520b, and 520c. This may also be the case. In such an example, the dielectric is as shown in Figures 2A, 2B, 2D, 3, 4A, and In the implementation of the type described above in relation to Figure 4B, the light-emitting structure 520 is configured or arranged It may be used for the purpose of [doing something].

[0042] The light-emitting structure 520a is a light-emitting element (e.g., light-emitting element 220) that generates light of a first color. Even if it is part of or configured to correspond to a light-emitting element that generates light of a first color Good. The light-emitting structures 520b and 520c produce light of a second and a third color, respectively. They are part of a light-emitting element, or they generate a second color of light and a third color of light, respectively. It may be configured to correspond to a light-emitting element. Although not shown, it may generate additional colored light. To that end, other light-emitting structures may be provided.

[0043] Further details regarding the layers, assembly, or configuration of the luminescent structure are shown in the luminescent structure 520 in the center. Related to b, this is shown in schematic diagram 500a of Figure 5A. For example, the light-emitting structure is a light-emitting element. It may be part of or correspond to a light-emitting element, and this light-emitting structure is active Epitaxial growth region having a sexual region (e.g., a region used to generate light) 530, high concentration deposited on top of region 530 (e.g., composed of p++-doped material) Doped layer 540, and deposited on top of the high-concentration doped layer 540 (for example, metal or permeable Conductive material (also called a p-type contact or p-type contact layer) It may also include a tact layer 550. Furthermore, the light-emitting structure may have a side surface of the high-concentration doped layer 540. Passivation deposited (in some cases, on the top of the partially high-concentration doped layer 540) It may also have a layer 560. The active region within region 530 is the individual amount within region 530 At least one quantum well in either a sub-well structure or a multiple quantum well (MQW) structure It may include a door. In addition, or instead, the active region within region 530 may be one or The mixture may contain multiple rare earth elements, and the rare earth elements are selected according to the color of the light produced. Although the light structures 520a and 520b are similarly constructed, each generates light of a different color. It is understood that it may have different regions 530 (i.e., different active regions) in order to do so. Please understand. In this way, the light-emitting structures 520a, 520b, and 520c are on a single substrate 51 It can be said that it is integrally constructed on 0.

[0044] In this example, the conductive contact layer 550 covers only the top of the high-concentration doped layer 540. This is because, for example, a passivation layer 560 is placed in front of the conductive contact layer 550. This can be achieved through deposition.

[0045] The sides of the light-emitting structures 520a, 520b, and 520c may be faceted. That is, it may not be vertical, but instead have an angle or inclination. This is in area 53 0, the configuration of the side or sidewall of the high-concentration doped layer 540 and the passivation layer 560 It is reflected.

[0046] Schematic diagram 500b in Figure 5B is integrally constructed on a substrate 510 (for example, a semiconductor substrate). The following are cross-sectional views of other examples of the light-emitting structures 520e, 520d, and 520f. Substrate 510 It may be part of the device, or it may be the same substrate as shown in schematic diagram 500a of Figure 5A. They may be similar. The substrate 510 has a lower layer 503 and one or more buffer layers. Alternatively, it may have an initiation layer 505. Various light-emitting structures 520d, 520 e,520f is grown at a specific location or place using different semiconductor manufacturing techniques. This allows for the creation of a light-emitting structure in relation to Figures 2A, 2B, 2D, 3, 4A, and 4B. The implementation types described above can be configured or arranged.

[0047] The light-emitting structure 520d is a light-emitting element (e.g., light-emitting element 220) that generates light of a first color. Even if it is part of or configured to correspond to a light-emitting element that generates light of a first color Good. The light-emitting structures 520e and 520f generate the second and third colors of light, respectively. For optical elements, or for light-emitting elements that generate a second color of light and a third color of light, respectively. It may be configured to respond to other factors. Although not shown, other emission may be used to generate additional colored light. Further optical structures may be provided.

[0048] Further details regarding the layers, assembly, or configuration of the luminescent structure are shown in the luminescent structure 520 in the center. Related to e, this is shown in schematic diagram 500b of Figure 5B. For example, the light-emitting structure is a light-emitting element. It may be part of or correspond to an epiluminescent element, and may have an active region. The taxial growth region 530, the highly concentrated doped layer 540, and the conductive contact layer 550 It may be provided. Also, the light-emitting structure may have sides (in some cases, partially) of the light-emitting structure. The light-emitting structure may include a passivation layer 560 deposited on the top of the structure. The active region within 530 is the individual quantum well structure or multiple quantum well (MQW) within region 530. ) may include at least one quantum well of any form of structure. In addition, or Alternatively, the active region within region 530 may contain one or more rare earth elements. Rare earth elements are selected according to the color of the light produced. The light-emitting structures 520d and 520f are constructed similarly. Although this is done, each is in a different region 530 to generate light of a different color (i.e.) It should be understood that they may have different active regions. Thus, the luminescent structure 5 It can be said that 20d, 520e, and 520f are integrally configured on a single substrate 510. The sides or sidewalls of the light-emitting structures 520d, 520e, and 520f may be vertical. This is according to different semiconductor manufacturing technologies and processes used to manufacture structures. It's okay if that's achieved.

[0049] Schematic diagram 600a in Figure 6A is related to the light-emitting structures 520a and 520b described above in relation to Figure 5A. A cross-sectional view of an example of a device having 520c is shown. The device of this embodiment is It may also be used in spray panels, with a passivation layer 6 deposited between the light-emitting structures. 20 (for example, corresponding to passivation layer 560), and at the edge (right edge) of the device It is equipped with a contact metal 610 (for example, an n-type contact metal). Schematic diagram in Figure 6B. As shown in 600b, a passivation layer is used to allow electrical contact with the structure. 620 does not cover the top of the conductive contact layer 550 of each light-emitting structure. (Schematic Figure 6) In 00b, the backplane 310 (see, for example, Figure 3) is the Dave in schematic Figure 600b It may be connected to a chair. In this example, the connection part 320 is a disc that contacts the conductive layer 550. Play panel connection section 320a, and the corresponding backplane on backplane 310 It may have a connection part 320b. Display panel connection part 320a and backp The lane connection section 320b is shown as a bump, but each conductive contact layer 550 The electricity between the backplane 310 and each light-emitting structure 520a, 520b, 520c is transmitted via Other types of connectors that enable air connection may be used.

[0050] Schematic figure 600c in Figure 6C is related to the light-emitting structures 520d and 520e described above in Figure 5B. A cross-sectional view of an example of a device having 520f is shown. The device of this embodiment is It may also be used in spray panels, with a passivation layer 6 deposited between the light-emitting structures. 20 (corresponding to passivation layer 560), and contacts at the edge (right edge) of the device. It is equipped with metal 610 (for example, n-type contact metal). Schematic diagram 600d in Figure 6D. As shown, in order to allow electrical contact to the structure, the passivation layer 620 , it does not cover the top of the conductive contact layer 550 of each light-emitting structure. Schematic Figure 600d The backplane 310 is connected to the device in Figure 6C via the connector 320. This is also acceptable. In this example, the connection part 320 is a display panel connection that contacts the conductive layer 550. Section 320a and the corresponding backplane connection section 320b on the backplane 310 They may have: Display panel connection part 320a and backplane connection part 32 0b is shown as a bump, but backpressure is applied through the conductive contact layer 550. This enables electrical connection between the 310 and each light-emitting structure 520d, 520e, and 520f. Other types of connectors may be used.

[0051] Figures 7A to 7C are schematic diagrams showing cross-sectional views of examples of light-emitting structures according to embodiments of this disclosure. Figures 0a, 700b, and 700c are shown. For example, schematic figure 700a has multiple layers. This shows a light-emitting structure. The light-emitting structure consists of an n-type layer 750 and a structure provided on top of the n-type layer 750. An active region 730, a p-type layer 720 provided on the active region 730, and the p-type layer 720 It may have a conductive layer 710 provided on top. The active region 730 produces light of an appropriate color. To achieve this, one of the forms of individual quantum well structures or parts of the MQW structure Alternatively, it may include multiple quantum wells. In addition, or instead, the active region 730 is To produce light of the appropriate color, it may contain one or more rare earth elements. Active region 730 may correspond to the active region of region 530, and the p-type layer 720 is the highly doped layer 5 It may also correspond to 40, and the conductive layer 710 corresponds to the conductive contact layer 550 described above. Similarly, the n-type layer 750 and the active region 730 are also part of the region 530 described above. This may also be the case. The light-emitting structure in schematic figure 700a is, for example, related to Figures 5B, 6C, and 6D. In connection therewith, the light-emitting structures 520d, 520e having vertical side walls such as the vertical side wall 740 described above. ,520f may be an example.

[0052] Schematic Figure 700b shows another light-emitting structure having multiple layers. The structure consists of an n-type layer 750, an active region 730 provided on the n-type layer 750, and an active region 730. It has a p-type layer 720 provided on top of it, and a conductive layer 710 provided on top of the p-type layer 720. Unlike the example in schematic diagram 700a, these layers are bent downward at the ends of the structure. It grows or deposits in such a way. The active region 730 generates light of the appropriate color. One or more quantum particles in either the form of individual quantum well structures or part of the MQW structure It may include wells. One or more quantum wells may also be within the active region 730. The structure may be configured to bend downward at its ends. In addition, or instead, The active region 730 contains one or more rare earth elements to produce light of the appropriate color. The active region 730 may correspond to the active region of region 530, and the p-type layer 720 may be The high-concentration doped layer 540 may also be used, and the conductive layer 710 is the conductive contact described above. It may also correspond to layer 550. Similarly, the n-type layer 750 and the active region 730 correspond to the regions described above. It may be part of 530. It has faceted ends or inclined ends. Therefore, the light-emitting structure shown in schematic diagram 700b is described above in relation to Figures 5B, 6C, and 6D. This may differ from the light-emitting structures 520d, 520e, and 520f, which have vertical side walls. .

[0053] Schematic figure 700c shows a similar example to schematic figure 700a. However, in this case, the material By performing regrowth, a regrowth section 760 can be added to the side surface of the light-emitting structure. Section 760 is shown by different dashed lines indicating the shape of the regrowth section 760, representing the process characteristics. It may change based on this.

[0054] Figures 8A and 8B show, respectively, arrays or groups of one type of light-emitting structure. Schematic diagrams 800a and 800b showing cross-sectional views are shown. For example, schematic diagram 800 Device a consists of a first array 810a of light-emitting structures that generate light of a first color, and a second color of light The second array 810b of the light-emitting structure that generates light, and the third array 81 that generates light of a third color It may have 0c. In one example, these light-emitting structures are shown in schematic Figure 500a of Figure 5A. Similar to the type of light-emitting structure (for example, light-emitting structures 520a, 520b, 520c) It is also possible that only three different luminescent structures, i.e., three different types of colors, are shown. However, it has been understood that the number of light-emitting structures can be more or less than three. In this example, light-emitting structures that produce light of the same color may be placed together to form an array. These arrangements correspond to the subpixel arrangement shown in schematic Figure 400b of Figure 4B, for example. This is also fine. In the example of schematic diagram 800a, the common contact 820 is in various arrangements 810a, 810b, It may be used in all light-emitting structures of 810c.

[0055] The device in schematic diagram 800b is the first group 83 of light-emitting structures that generate light of a first color. 0a, a second group 830b of light-emitting structures that generate a second color of light, and a third color of light It may have a third group 830c of light-emitting structures that generate these. The light-emitting structure is of the type of light-emitting structure shown in schematic Figure 500a of Figure 5A (for example, light-emitting structure 5 It may be the same as 20a, 520b, 520c). Three different light-emitting structures, that is, Although only three different types of colors are shown, the number of luminescent structures is more than three. It is important to understand that a good amount is acceptable, or a small amount is also acceptable. In this example, the emission produces light of the same color. The structures may be arranged in any order (for example, in a two-dimensional order or an array). The group includes, for example, Laxel and Super Laxel, shown in schematic diagram 400a of Figure 4A. It may match the layout or arrangement of the following. In the example of schematic diagram 800b, common contact 82 0 is used in all light-emitting structures of various groups 830a, 830b, and 830c. That's good too.

[0056] Figures 8C and 8D show cross-sections of arrays or groups of other types of light-emitting structures, respectively. Schematic diagrams 800c and 800d, showing the surface view, are shown. Schematic diagram 800c is schematic Similar to Figure 800a, the first array 810d of the light-emitting structure that generates the first color of light, and the second color A second array 810e of light-emitting structures that generate light of a third color, and a light-emitting structure that generates light of a third color The device includes a third array 810f of the body. The light-emitting structure of these arrays is shown in Figure 5B. The type of light-emitting structure shown in schematic figure 500b (for example, light-emitting structures 520d, 520e, 5 These arrangements may be the same as those in 20f), and these arrangements are shown, for example, in schematic diagram 400b of Figure 4B. The arrangement may coincide with that of the sub-pixels.

[0057] Schematic diagram 800d, similar to schematic diagram 800b, shows the first of the light-emitting structures that generate light of the first color. Group 1 830d, Group 2 830e of light-emitting structures that generate a second color of light, and The device includes a third group 830f of light-emitting structures that generate a third color of light. The light-emitting structures in these groups are of the type of light-emitting structure shown in schematic Figure 5B and Figure 500b (for example) The luminescent structures (520d, 520e, 520f) may be the same as these glues. For example, the Luxel and Super Luxel shown in schematic diagram 400a of Figure 4A. It may match the layout or arrangement of the letters.

[0058] A device having a light-emitting structure integrally formed on a single substrate as described above (for example, Figure Figures 5A to 6D, 7A to 7C, and 8A to 8D) are, for example, schematic representations of Figure 1. It may also be part of a display panel, such as panel 150 shown in Figure 100. If the display can have all the light-emitting structures (light-emitting elements) necessary for the display. In some cases, a single device (e.g., a single circuit board) may suffice. Alternatively, a display To provide the required number and / or density of light-emitting structures (light-emitting elements), multiple devices Sometimes it's necessary to combine chairs (for example, by connecting them together).

[0059] Figures 9A and 9B show devices for generating light in a display, respectively. Schematic diagrams 900a and 900bm show examples of different arrangements. Schematic diagram 900 In a, a single device 910 (for example, Figures 5A to 6D, 7A to 7C, and One of the devices shown in Figures 8A to 8D is necessary for the display 110 to function properly. A light-emitting structure, integrally configured in a sufficient number and / or density to provide the necessary light-emitting elements. It may have a body. In schematic diagram 900b, a single device 910 is a display. 110 provides a sufficient number and / or density of light-emitting elements necessary for proper operation. It does not have a light-emitting structure that is integrally composed of multiple devices. It may be necessary to combine the 910s with each other. Multiple devices 910s can be combined in these ways. The amount is sufficient to provide the light-emitting elements necessary for the display 110 to operate properly. As long as it has a number and / or density of light-emitting structures that are integrally composed, it can be the same size as They may be different sizes.

[0060] In relation to the description of Figures 1 to 9B above, this disclosure includes at least a portion of GaN. One or more buffer layers made of material (for example, one or more buffer layers or a substrate (e.g., substrate 510) having an initiation layer (505) that generates light This describes a device for achieving this. This device also has one or more buffer layers. Multiple light-emitting structures (e.g., light-emitting structure 5) epitaxially grown on the same surface of the uppermost layer It may also include (20a~520f). Each light-emitting structure is terminated in a lateral direction parallel to the surface. Having an ended active region (e.g., active region 730), the active regions of different luminescent structures are, It is configured to directly generate light of different colors. "Directly generate" means within the active region. or transitions that occur between the active region and other structures physically bonded to the luminescent structure, It may refer to the generation of light by an effect similar to that of the light-emitting structure. The device is the same as the light-emitting structure. Each of the aforementioned active regions is positioned on top of a p-type doped material which contains at least a portion of GaN. The constructed p-type doped layer (for example, a highly concentrated doped layer 540 and a p-type layer 720) further comprises It may be so. In this disclosure, GaN-containing material refers, for example, to a material containing a GaN alloy. Sometimes, the active region can also be a vertical region.

[0061] In another embodiment of the device for generating light, the device also comprises the p-type doped layer A contact layer (for example, conductive contact layer 550, conductive contact) is placed on top of it. It may also have layer 710). The contact layer may be a conductive layer, and a metal contact It is either a tact layer or a transparent contact layer. In one example, the transparent contact is an ink Calcium tin oxide (ITO), nickel (Ni) and gold (Au) alloys, or oxygen (O) It is composed of an annealed alloy of Ni and Au.

[0062] In another embodiment of a device for generating light, the one or more buffer layers are front The above may be epitaxially grown on the substrate. The material constituting the upper layer includes GaN. The material includes a GaN alloy. The p-type doping material constituting the p-type doping layer is GaN Includes alloys. In some examples, the material constituting the one or more buffer layers and The p-type doping material constituting the p-type doping layer is the same material.

[0063] In other embodiments of devices for generating light, the different light-emitting structures directly emit blue light. Active One or more light-emitting structures having a light region, and configured to directly generate green light. One has an active region composed of an InGaN-containing material having a band gap Alternatively, it may have multiple light-emitting structures and a band gap configured to directly generate red light. One or more light-emitting structures having an active region composed of a material containing InGaN These may include. These different light-emitting structures are different from blue light, green light, and red light. A material containing InGaN having a band gap configured to directly generate light. The present invention may further include one or more luminescent structures having an active region.

[0064] In other embodiments of devices for generating light, the different light-emitting structures directly emit blue light. Having at least one quantum well within the active region configured to generate, one or Multiple light-emitting structures and at least one active region configured to directly generate green light One or more light-emitting structures having two quantum wells, and configured to directly generate red light One or more light-emitting structures having at least one quantum well within the formed active region It may include the following. The different light-emitting structures are different from blue light, green light, and red light. Having at least one quantum well within an active region configured to directly generate light, It may further include one or more light-emitting structures.

[0065] In another embodiment of the device for generating light, the different light-emitting structure has an active region of 1 A single entity comprising one or more rare earth elements, wherein the active region is configured to generate blue light. Alternatively, it may have multiple luminescent structures and one or more rare earth elements in the active region, and the active region is green. One or more light-emitting structures configured to generate light, and one active region Alternatively, it has multiple rare earth elements, and the active region is configured to generate red light, or It includes multiple light-emitting structures. The different light-emitting structures have one or more rare earth elements in their active regions. It has a type, and the active region is configured to generate light different from blue light, green light, and red light. It may further include one or more light-emitting structures. The one or more rare earths include one or more of Eu, Er, Tm, Gd, or Pr (e.g., Eu , 3+ , + , , +3 , , , 3 , Er 3+ , T m 3+ , Gd +3 , Pr +3 , or other charged states of these materials). In other embodiments of the device for generating light, the plurality of light-emitting structures are arranged in a lattice pattern (see, for example, FIGS. 4A and 4B). The lattice pattern may be, for example, a square pattern, a rectangular pattern, or a hexagonal pattern.

[0066] The lattice pattern may include one or more repeating arrays of the different light-emitting structures. In other embodiments of the device for generating light, the active region includes a bulk active region. The active region may be doped with one or more rare earths. Examples of the one or more rare earths include one or more of Eu, Er, Tm, Gd, or Pr. In one example, any of Eu , Er , Tm , Gd

[0067] , or Pr may be used. These charged states are merely illustrative for the purpose of explanation, and other charged states may be used. The charged state used may vary depending on the matrix in which the rare earth is incorporated. The one or more rare earths may be included in the superlattice of the active region or the bulk active region. The active region has a plurality of vertical sidewalls . In other embodiments of the device for generating light, the active region includes a bulk active region. The active region may be doped with one or more rare earths. Examples of the one or more rare earths include one or more of Eu, Er, Tm, Gd, or Pr. In one example, any of Eu , Er 3+ , Tm 3+ , Gd 3+ , or Pr +3 may be used. These charged states are merely illustrative for the purpose of explanation, and other charged states may be used. The charged state used may vary depending on the matrix in which the rare earth is incorporated. The one or more rare earths may be included in the superlattice of the active region or the bulk active region. The active region has a plurality of vertical sidewalls + 3 is merely illustrative and other charged states may be used. The charged state used may vary depending on the matrix in which the rare earth is incorporated. The one or more rare earths may be included in the active region [[ID=五十二]] or the superlattice of the bulk active region. The active region has a plurality of vertical sidewalls . [[ID= fifty-six]] or may be included in the superlattice of the bulk active region. The active region has a plurality of vertical sidewalls It may be terminated laterally by (for example, a vertical side wall 740).

[0068] In other embodiments of the device for generating light, the active region is one or more The buffer layer includes at least one quantum well parallel to the surface of the uppermost layer. Each quantum well may have a uniform thickness.

[0069] In other embodiments of devices for generating light, each light-emitting structure comprises multiple faceted structures. Side walls (for example, the sides or side walls of the light-emitting structures 520a, 520b, 520c, and Figure 7) The light-emitting structure has sides or sidewalls as shown in schematic diagram 700b of B. The active region of the light-emitting structure may include at least one quantum well. Multiple asterisk-shaped side walls are located on a plane other than the plane perpendicular to the growth direction of the multiple light-emitting structures. It is located there.

[0070] In other embodiments of devices for generating light, the active region undergoes epitaxial regrowth. It may be terminated laterally by passivation (for example, the schematic diagram in Figure 7C). (See the luminescent structure shown at 700c).

[0071] In another embodiment of a device for generating light, each light-emitting structure has multiple side walls, The sivation material (e.g., passivation layers 560, 620) is applied to the plurality of side walls They are placed adjacent to each other. The passivation material has a bandgap wider than that of GaN. It may have a band gap. The passivation material may be Ga2O3 or A It may contain l2O3. The active region includes at least one quantum well. Also, the passivation material is the band gap of the at least one quantum well. It may have a wider band gap. The passivation material is the light-emitting material. The doping may be opposite to the doping of the corresponding part of the structure. Sivation materials are in a mid-gap state that is not ionized at room temperature or operating temperature. They may have deep levels. In this case, the plurality of side walls may be a plurality of vertical side walls. good.

[0072] In another embodiment of a device for generating light, each light-emitting structure has multiple side walls and the multiple Dielectric passivation layers (e.g., passivation layer 5) are placed adjacent to the side walls of a number of walls. It has 60,620). The dielectric passivation material is GaN or In It may have a band gap higher than that of GaN. Multiple side walls may also be multiple vertical side walls.

[0073] In other embodiments of devices for generating light, the width of each light-emitting structure, or adjacent light-emitting structures, The spacing between structures is less than 1 micron, between 1 and 5 microns, or greater than 5 microns. It is within one of the following ranges.

[0074] In other embodiments of devices for generating light, a contact layer (e.g., conductive contact) The doped layer (550) may be placed on top of the p-type doped layer. Connecting part (for example, connecting part 5 20) may be placed on the contact layer, and the plurality of light-emitting elements within the device Each of the structures is placed on the display backplane (for example, backplane 310). The con The tact layer may be a conductive layer, and may be either a metal contact layer or a transparent contact layer. The connecting portion may be a metal bump.

[0075] In another embodiment of the device for generating light, the plurality of light-emitting structures are the different colors The devices may be arranged in different arrays or groups based on the light. A first contact layer (e.g., p-type contact, conductive contact) is placed on top of the type-doped layer. A contact layer 550) and a second contact layer (for example, positioned on top of the uppermost buffer layer) It also features n-type contacts (contact 820).

[0076] In another embodiment of the device for generating light, the plurality of light-emitting structures are the different colors The devices may be arranged in different arrays or groups based on the light. A first contact layer (e.g., p-type contact, conductive contact) is placed on top of the type-doped layer. A contact layer 550) and a second contact layer (for example, positioned on top of the uppermost buffer layer) n-type contact (contact 820) and to separate at least a portion of the plurality of light-emitting structures Furthermore, the trenches provided in the one or more buffer layers are further They are prepared.

[0077] In another embodiment of a device for generating light, the plurality of light-emitting structures are mixed The devices are arranged in different arrays or groups that include colored light emission. A first contact layer (e.g., p-type contact, conductive contact) is placed on top of the type-doped layer. A contact layer 550) and a second contact layer (for example, positioned on top of the uppermost buffer layer) It also features n-type contacts (contact 820).

[0078] In another embodiment of a device for generating light, the plurality of light-emitting structures are mixed The devices are arranged in different arrays or groups that include colored light emission. A first contact layer (e.g., p-type contact, conductive contact) is placed on top of the type-doped layer. A contact layer 550) and a second contact layer (for example, positioned on top of the uppermost buffer layer) n-type contact (contact 820) and to separate at least a portion of the plurality of light-emitting structures Furthermore, the trenches provided in the one or more buffer layers are further They are prepared.

[0079] In another embodiment of a device for generating light, the plurality of light-emitting structures are multiple microphones. This is a light-emitting device or a set of micro-LEDs.

[0080] In another embodiment of a device for generating light, the device is a light field device. It is part of a display (for example, a light field display 210a), and the light Connected to the backplane of the field display (e.g., backplane 310) It is.

[0081] In other embodiments of a device for generating light, the device is a first device (for example) The second device is the device 910 shown in Figures 9A and 9B, and the second device is the first device The first and second devices are substantially the same as the first device and the second device, and the light feel It is a part of a display, such as a digital display.

[0082] This disclosure describes how to integrally configure light-emitting structures that generate light of different colors on the same substrate. Various technologies and devices that make this possible are described.

[0083] Therefore, although this disclosure is provided according to the embodiments shown, those skilled in the art will understand the embodiments. It is easy to recognize that variations may occur and that such variations fall within the scope of this disclosure. Therefore, without departing from the scope of the attached claims, by those skilled in the art, Many modifications may be made.

Claims

1. A conductive semiconductor substrate and A red microLED, a green microLED, and a blue microLED formed on the conductive semiconductor substrate, On the conductive semiconductor substrate, a first contact is formed on a part of the conductive semiconductor substrate at a laterally spaced distance from the red microLED, the green microLED, and the blue microLED, A second contact is positioned on the red microLED, a third contact is positioned on the green microLED, and a fourth contact is positioned on the blue microLED, The system comprises a connecting portion disposed on the conductive semiconductor substrate, The first contact is a common contact that is electrically connected to the red micro-LED, the green micro-LED, and the blue micro-LED, respectively. The first contact is electrically coupled via the connection portion to a backplane provided to electrically drive the red micro-LED, the green micro-LED, and the blue micro-LED. The first contact is formed at least partially in a recess of the conductive semiconductor substrate, Each of the red microLED, the green microLED, and the blue microLED has a plurality of side walls and a passivation material arranged adjacent to the plurality of side walls. A portion of the passivation material is formed on the first contact within the recess, forming a micro-LED display.

2. The microLED display according to claim 1, wherein the distance between two adjacent LEDs among the red microLED, the green microLED, and the blue microLED is 5 microns or less.

3. The microLED display according to claim 1, wherein the conductive semiconductor substrate includes a lower layer and a buffer layer or initiation layer formed on the lower layer, and the recess is formed in the buffer layer or initiation layer.

4. The microLED display according to claim 1, wherein the red microLED, the green microLED, and the blue microLED are integrally arranged on the conductive semiconductor substrate.

5. The microLED display according to claim 4, wherein the red microLED, the green microLED, and the blue microLED each include layers epitaxially formed on the conductive semiconductor substrate.

6. The microLED display according to claim 4, wherein the red microLED, the green microLED, and the blue microLED each have active regions provided to emit light of a different color.

7. The microLED display according to claim 1, wherein the red microLED, the green microLED, and the blue microLED are included in the pixels of the microLED display.

8. The first contact includes n contacts, The microLED display according to claim 1, wherein the second contact, the third contact, and the fourth contact each include a p-contact.

9. The microLED display according to claim 1, wherein the red microLED, the green microLED, and the blue microLED are mesa type.

10. The microLED display according to claim 1, wherein the red microLED, the green microLED, and the blue microLED are arranged adjacent to each other on the conductive semiconductor substrate.

11. The microLED display according to claim 1, wherein the red microLED, the green microLED, and the blue microLED each include a highly doped layer, and the second contact, the third contact, and the fourth contact are arranged on the respective highly doped layers.

12. The microLED display according to claim 1, wherein the conductive semiconductor substrate contains gallium nitride.

13. The microLED display according to claim 1, wherein at least one of the red microLED, the green microLED, and the blue microLED includes an active region that is parallel to the surface of the conductive semiconductor substrate and terminated laterally.

14. The microLED display according to claim 1, wherein the second contact, the third contact, and the fourth contact are electrically coupled to the backplane.

15. A method for forming a microLED display, Forming red micro-LEDs, green micro-LEDs, and blue micro-LEDs on a conductive semiconductor substrate. Forming recesses in the conductive semiconductor substrate, Forming a first contact on a portion of the conductive semiconductor substrate that is spaced laterally from the red microLED, the green microLED, or the blue microLED, and This includes forming a second contact on the red microLED, a third contact on the green microLED, and a fourth contact on the blue microLED. The first contact is formed as a common contact that is electrically connected to the red micro-LED, the green micro-LED, and the blue micro-LED, respectively. The first contact is formed at least partially within the recess, The first contact is further electrically coupled to a backplane provided to electrically drive each of the red micro-LED, the green micro-LED, and the blue micro-LED via a connection portion disposed on the conductive semiconductor substrate, Forming the red microLED, the green microLED, and the blue microLED includes forming the red microLED, the green microLED, and the blue microLED having a plurality of side walls and passivation material arranged adjacent to the plurality of side walls, A method wherein a portion of the passivation material is formed on the first contact within the recess.

16. The method according to claim 15, wherein forming the red microLED, the green microLED, and the blue microLED is performed such that the distance between any two adjacent LEDs is 5 microns or less.

17. The conductive semiconductor substrate includes a lower layer and a buffer layer or initiation layer formed on the lower layer, The method according to claim 15, wherein forming the recess includes forming the recess in the buffer layer or the initiation layer.

18. The method according to claim 15, wherein forming the red microLED, the green microLED, and the blue microLED includes integrally forming the red microLED, the green microLED, and the blue microLED on the conductive semiconductor substrate.

19. The method according to claim 18, wherein integrally forming the red microLED, the green microLED, and the blue microLED includes epitaxially growing the red microLED, the green microLED, and the blue microLED on the conductive semiconductor substrate.

20. The method according to claim 18, wherein integrally forming the red microLED, the green microLED, and the blue microLED on the conductive semiconductor substrate includes forming respective active regions that emit light of different colors.

21. The method according to claim 15, wherein forming the red microLED, the green microLED, and the blue microLED includes forming pixels of the microLED display.

22. The method according to claim 15, wherein the first contact is an n-contact, and the second contact, the third contact, and the fourth contact are p-contacts.

23. The method according to claim 15, wherein forming the red microLED, the green microLED, and the blue microLED includes forming the red microLED, the green microLED, and the blue microLED in a mesa shape.

24. The method according to claim 15, wherein forming the red microLED, the green microLED, and the blue microLED includes forming the red microLED, the green microLED, and the blue microLED adjacent to each other on the conductive semiconductor substrate.

25. The method according to claim 15, wherein the red microLED, the green microLED, and the blue microLED each include a highly doped layer, and the second contact, the third contact, and the fourth contact are arranged on the respective highly doped layers.

26. The method according to claim 15, wherein the conductive semiconductor substrate contains gallium nitride.

27. The method according to claim 15, wherein forming at least one of the red microLED, the green microLED, or the blue microLED includes forming an active region that is parallel to the surface of the conductive semiconductor substrate and terminates laterally.

28. The method according to claim 15, wherein electrically coupling the first contact to the backplane further comprises electrically coupling the second contact, the third contact, and the fourth contact to the backplane.

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