Gas box for semiconductor processing chamber

Abstract

To provide a semiconductor processing chamber gas box and a semiconductor processing chamber, which can be used for manufacturing a high-quality device and structure.SOLUTION: A semiconductor processing chamber 300 includes a gas box 325 including a first plate 330 which has a first front surface 331 and a second front surface 332 on the side opposite to the first front surface. The first plate of the gas box defines a center open hole 322 extended from the first front surface to the second front surface, defines an annular concave part 335 to the second front surface, and defines a plurality of open holes 337 that is extended to the annular concave part of the second front surface from the first front surface. The gas box includes a second plate 340 having an annular shape as a characteristic, and the second plate is coupled to the first plate in the annular concave part, and defines a first plenum in the first plate.SELECTED DRAWING: Figure 3

Description

Technical Field

[0005] ,

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Non - Provisional Application No. 17 / 077,674, filed on October 22, 2020, entitled "GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER", the content of which is hereby incorporated by reference in its entirety for all purposes.

[0002] Technical Field

[0002] This technology relates to components and devices for semiconductor manufacturing. More particularly, this technology relates to process chamber distribution components and other semiconductor processing devices.

Background Art

[0005] An exemplary semiconductor processing chamber may include a gas box comprising a first plate having a first surface and a second surface opposite the first surface. The first plate of the gas box may define a central opening extending from the first surface to the second surface. The first plate may define an annular recess on the second surface. The first plate may define a plurality of openings extending from the first surface to the annular recess on the second surface. The gas box may include a second plate characterized by an annular shape. The second plate may be connected to the first plate in the annular recess to define a first plenum within the first plate.

[0006]

[0006] In some embodiments, the first plate further defines a concave channel within the first surface of the first plate. The concave channel may extend around a central opening. The concave channel may extend from a first position to a plurality of second positions that provide fluid access to a plurality of openings extending from the first surface of the first plate. The gas box may further include a cover plate that covers the concave channel and forms a second plenum within the first plate. The annular recess defined on the second surface may include a stepped recess. The second plate may be connected to the stepped feature of the annular recess. The second plate may define a plurality of outlet openings that provide fluid access from the first plenum. The first plate may define an annular channel that penetrates the first plate and extends around the central opening. The first plate may define a plurality of lateral channels that extend from the annular channel to the outer edge of the gas box of the semiconductor processing chamber. The lateral channel does not have to intersect any of the multiple openings extending through the first plate. The first plate can define multiple bypass openings extending from the lateral channel through the second surface of the gas box of the semiconductor processing chamber.

[0007]

[0007] Some embodiments of the present technology may encompass a semiconductor processing chamber including a manifold that provides fluid access to a chamber for multiple fluids. The chamber may include a gas box including a first plate having a first surface and a second surface opposite the first surface. The first plate may define a central opening extending from the first surface to the second surface. The first plate may define an annular recess on the second surface. The first plate may define multiple openings extending from the first surface to the annular recess on the second surface. The gas box may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate in the annular recess to define a first plenum within the first plate.

[0008]

[0008] In some embodiments, the manifold may include an internal zone connected to a first fluid supply channel. The manifold may include an external zone extending around the internal zone and being fluidically isolated from the internal zone. The external zone may be connected to a second fluid supply channel. The first plate may define an annular channel that penetrates the first plate and extends around a central opening. The annular channel may be fluidically connected to the external zone of the manifold. The first plate may define a concave channel within a first surface of the first plate. The concave channel may extend around a central opening. The concave channel may extend from a first position to a plurality of second positions that provide fluidic access to a plurality of openings extending from the first surface of the first plate. The chamber may include a cover plate that covers the concave channel and forms a second plenum within the first plate. The system may include a substrate support. The system may include a blocker plate positioned between the gas box and the substrate support. A first region can be defined between the gas box and the blocker plate. The first region can be fluidically accessed through a central opening and a plurality of peripheral openings. The system may include a faceplate, which can be positioned between the blocker plate and the substrate support. A second region can be defined between the blocker plate and the faceplate. The second region can be fluidly accessed through a lateral channel extending through the gas box.

[0009]

[0009] Such technologies may offer many advantages over conventional systems and technologies. For example, embodiments of this technology can enable controlled dilution and distribution of the precursor across the inner and outer regions of the substrate. Furthermore, the chamber and components can enable the supply of various ratios of precursor and inert gas to the inner and outer regions of the substrate. These and other embodiments, along with many of their advantages and features, will be described in more detail in conjunction with the following description and accompanying figures.

[0010]

[0010] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and drawings. [Brief explanation of the drawing]

[0011] [Figure 1]

[0011] An exemplary top view of a processing system according to several embodiments of the present technology is shown. [Figure 2]

[0012] A schematic cross-sectional view of an exemplary plasma system according to several embodiments of this technology is shown. [Figure 3]

[0013] This shows a schematic partial cross-sectional view of an exemplary semiconductor processing chamber according to several embodiments of this technology. [Figure 4]

[0014] This shows a schematic top view of an exemplary gas box according to several embodiments of this technology. [Figure 5A-5B]

[0015] Figures 5A and 5B show schematic partial cross-sectional views of exemplary substrates according to several embodiments of the present technology. [Figure 6]

[0016] The following are schematic diagrams of exemplary gas box plates according to several embodiments of this technology. [Figure 7]

[0017] This shows a schematic partial perspective view of an exemplary output manifold 700 according to several embodiments of the present technology. [Modes for carrying out the invention]

[0012]

[0018] Some of the figures are included as schematic diagrams. These diagrams are for illustrative purposes only and should not be considered to scale unless specifically stated. Furthermore, as schematic diagrams, they are provided to aid understanding and may not include all aspects or information compared to realistic representations, and may contain exaggerated material for illustrative purposes.

[0013]

[0019] In the attached diagrams, similar components and / or feature parts may have the same reference label. Furthermore, various components of the same kind can be distinguished by following the reference code with letters that distinguish similar components. Where only the first reference code is used herein, the description is applicable to any one of the similar components having the same first reference code, regardless of the letters.

[0014]

[0020] Plasma-enhanced deposition processes can energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be manufactured for developing semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transfer and removal. For example, a hard mask film can be formed to facilitate substrate patterning while protecting the underlying material, which is otherwise maintained. In many processing chambers, several precursors can be mixed in a gas panel and supplied to the processing area of ​​the chamber where the substrate may be placed. The precursors can be distributed through one or more components within the chamber, which can result in a uniform radial or lateral supply, potentially increasing formation or removal on the substrate surface.

[0015]

[0021] As device feature size decreases, tolerances across the entire substrate surface may decrease, and differences in material properties across the film can affect device realization and uniformity. Many chambers contain characteristic processing signatures that can introduce non-uniformity across the substrate. Temperature differences, flow pattern uniformity, and other processing characteristics can affect the film on the substrate, resulting in differences not only in film properties but also in the materials generated or removed across the substrate. Adjusting the processing across various areas of the substrate, such as in-plane distortion and other film property issues, can be difficult with uniform feed chamber components, and many conventional techniques have limited available adjustments or may require the manufacture of specialized components.

[0016]

[0022] This technology overcomes these challenges by utilizing one or more chamber components that can facilitate supply adjustment, increase or decrease the supply of precursors by dilution using precursors or inert substances, or provide means for adjusting the membrane material based on the inclusion or adjustment of additional precursors. Therefore, improved membrane formation and removal, as well as improved membrane properties, can be achieved.

[0017]

[0023] While the remaining disclosure routinely identifies specific deposition processes that utilize the disclosed technology, it will be readily apparent that the system and method are equally applicable to other deposition and washing chambers, as well as to processes that may occur in the chambers described. Therefore, this technology should not be considered limited to use only in these specific deposition processes or chambers. This disclosure discusses one possible system and chamber that may include a lid stack component according to an embodiment of the technology, before describing additional modifications and adjustments to this system according to embodiments of the technology.

[0018]

[0024] Figure 1 shows a plan view of one embodiment of a deposition, etching, firing, and curing chamber processing system 100 according to an embodiment. In the figure, a pair of front-opening integrated pods 102 are received by a robotic arm 104 and supplied with substrates of various sizes, which are placed in a low-pressure holding area 106 before being positioned in tandem sections 109a-c and placed in one of the substrate processing chambers 108a-f. A second robotic arm 110 can be used to transport and return the substrate wafers from the holding area 106 to the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform a number of substrate processing operations, in addition to plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and other substrate processing, including annealing and ashing.

[0019]

[0025] The substrate processing chambers 108a - f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, such as 108c - d and 108e - f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, such as 108a - b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, such as 108a - f, can be configured to deposit an alternating stack of dielectric films on a substrate. Any one or more of the described processes can be performed in a chamber separate from the manufacturing systems shown in different embodiments. It should be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by the system 100.

[0020]

[0026] FIG. 2 shows a schematic cross - sectional view of an exemplary plasma system 200 according to some embodiments of the present technology. The plasma system 200 can be adapted to one or more of the tandem sections 109 described above and can show a pair of processing chambers 108 that can include a substrate support assembly according to an embodiment of the present technology. The plasma system 200 generally can include a chamber body 202 having sidewalls 212, a bottom wall 216, and internal sidewalls 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A - 220B can be similarly configured and can include the same components.

[0021]

[0027] For example, the processing region 220B may include components that are also included in the processing region 220A and may include a pedestal 228 disposed in the processing region through a passage 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 can provide a heater adapted to support the substrate 229 on the exposed surface of the pedestal, such as the body portion. The pedestal 228 can include a heating element 232, such as a resistive heating element, that can heat and control the substrate temperature at a desired processing temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0022]

[0028] The body of the pedestal 228 can be coupled to the stem 226 by a flange 233. The stem 226 can electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 can include a drive system that controls the raising and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for supplying power to the pedestal 228. The power box 203 can also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 may include a base assembly 238 adapted to removably couple to the power box 203. A circumferential ring 235 is shown on the power box 203. In some embodiments, the circumferential ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the upper surface of the power box 203.

[0023]

[0029] The rod 230 may also be included through a passage 224 formed in the bottom wall 216 of the processing area 220B, and can be used to position the substrate lift pins 261 positioned through the body of the pedestal 228. The substrate lift pins 261 selectively separate the substrate 229 from the pedestal, facilitating the replacement of the substrate 229 with a robot used to move the substrate 229 in and out of the processing area 220B through the substrate transfer port 260.

[0024]

[0030] A chamber lid 204 may be connected to the top of the chamber body 202. The lid 204 may house one or more precursor distribution systems 208 connected thereto. The precursor distribution system 208 may include a precursor inlet passage 240 that can deliver reactants and washing precursors into the processing area 220B via a dual-channel showerhead 218. The dual-channel showerhead 218 may include an annular base plate 248 having a blocker plate 244 positioned in the middle of the faceplate 246. A radio frequency ("RF") source 265 may be connected to the dual-channel showerhead 218, which can supply power to the dual-channel showerhead 218 to facilitate the generation of a plasma region between the faceplate 246 of the dual-channel showerhead 218 and the pedestal 228. In some embodiments, the RF source may be coupled to other parts of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 can be placed between the cover 204 and the dual-channel showerhead 218 to prevent RF power from being conducted to the cover 204. A shadow ring 206 can be placed around the pedestal 228 to engage with it.

[0025]

[0031] To cool the annular baseplate 248 during operation, optional cooling channels 247 can be formed in the annular baseplate 248 of the precursor distribution system 208. A heat transfer fluid such as water, ethylene glycol, or gas can be circulated through the cooling channels 247 to maintain the baseplate 248 at a predetermined temperature. To prevent the side walls 201, 212 from being exposed to the processing environment within the processing area 220B, a liner assembly 227 can be positioned within the processing area 220B in close proximity to the side walls 201, 212 of the chamber body 202. The liner assembly 227 may include a circumferential pumping cavity 225 that can be connected to a pumping system 264 configured to discharge gas and by-products from the processing area 220B and to control the pressure within the processing area 220B. Multiple exhaust ports 231 can be formed on the liner assembly 227. The exhaust ports 231 may be configured to allow gas flow from the processing area 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0026]

[0032] Figure 3 shows a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 according to several embodiments of the present technology. Figure 3 may include one or more components discussed above with respect to Figure 2 and may show further details relating to the chamber. The chamber 300 is understood to include any feature or aspect of the system 200 described above in some embodiments. The chamber 300 can be used to perform semiconductor processing operations, including the deposition of the hard mask material described above, as well as other deposition, removal, and cleaning operations. The chamber 300 may show a partial view of the processing area of ​​the semiconductor processing system and may not include all components such as the remote plasma unit described above, and it is understood that these may be incorporated into some embodiments of the chamber 300.

[0027]

[0033] As mentioned above, Figure 3 may show a portion of the processing chamber 300. The chamber 300 may include a number of lid stack components that can facilitate the supply or distribution of material through the processing chamber to a processing area 305 where, for example, a substrate 306 can be positioned on a substrate support or pedestal 310. The chamber lid plates may extend across one or more plates of the lid stack and can provide structural support to components such as the remote plasma unit described above for the system 200. The lid plates can provide access to the internal region of the processing chamber 300, for example, through openings. The output manifold 320 may be positioned on or associated with a gas box and can provide a connection to a remote plasma unit, which can provide a precursor or plasma ejecta for cleaning the chamber or other processing operations. The output manifold 320 may define a central opening 322 extending around the central axis of the chamber or the output manifold. Furthermore, a separate bypass 317 may be included, which in some embodiments can provide access to cleaning gas or flow from the RPS. The processing chamber 300 may also include a gas box 325 on which one or more components can be positioned.

[0028]

[0034] The gas box 325 can be characterized by a first plate 330 having a first surface 331 and a second surface 332 which may be opposite the first surface. The first plate of the gas box can define a central opening 333 that extends entirely through the gas box from the first surface to the second surface. The central opening 333 can be axially aligned with a central opening of the output manifold 320 and can be axially aligned with a central opening of an insulator or any other component that provides a fluid path to the chamber. The opening can define a channel which can be used at least partially to supply a precursor or plasma emitter from a remote plasma unit positioned on the output manifold. The first plate 330 can also define an annular recess 335 on the second surface of the gas box. In some embodiments, the recess may be a stepped recess as shown, which can allow for the connection of a second plate 340 which can be mounted on a ledge defined within the recess. This connection can generate a first plenum within the first plate of the gas box, which can be an annular plenum that allows for uniform distribution of material into the processing chamber.

[0029]

[0035] The first plate of the gas box may also define a plurality of openings 337 extending from a first surface of the first plate to an annular recess on a second surface of the first plate. As described below, the openings can provide additional fluid pathways for a precursor or inert gas supplied into the chamber. The first plate 330 may also define a recessed channel 342 within a first surface of the first plate. As further described below, the recessed channel 342 can extend around a central opening 333 in one or more ways in some embodiments of the art. In some embodiments, the gas box may include a cover plate 344 covering the recessed channel 342, thereby creating a second plenum within the first plate. The cover plate 344 can be formed to be fitted into the channel and can be welded or bonded onto a ledge or feature of the recessed channel, thereby enabling the second plenum to be sealed at a single inlet position, as further described below, which can have multiple outlet positions, such as through a plurality of openings. The first plenum can be fluidly accessible to the second plenum through an opening 337 extending through the plate. The first plate 330 can also define an annular channel 346 extending through the first plate around a central opening.

[0030]

[0036] The semiconductor processing chamber 300 may also include additional components in some embodiments, such as a blocker plate 350 and a faceplate 355. The blocker plate 350 may define a number of openings that can act as a choke to increase radial diffusion in order to improve the uniformity of the supply. The blocker plate 350 may be in a first position through the lid stack where precursors supplied to the central opening of the gas box and precursors supplied through the plenum of the gas box are mixed. As shown, a region 352 may be formed or defined between the gas box 325 and the blocker plate 350. The region 352 may be fluid-accessible from both the central opening 333 and a number of outlet openings defined in the second plate 340 that can provide fluid access from the plenum or annular recess 335 of the first plate. The precursors supplied into the zone may then be at least partially mixed or overlapped before continuing through the lid stack. By allowing a certain amount of mixing before contact with the substrate surface, a certain amount of overlap may be provided, thereby resulting in a smoother transfer on the substrate and limiting the formation of a film or interface on the substrate surface. The faceplate 355 can then supply the precursor to a processing area that can be at least partially defined from above by the faceplate. The faceplate 355 may also define an external zone between the gas box and the faceplate, so that lateral channels in the gas box can supply substances for cleaning or other purposes to the zone, as described below.

[0031]

[0037] To provide additional precursor channels through the annular channel, additional components may be incorporated to facilitate operation. For example, an isolator may be included to isolate connecting components from the gas box. The gas box 325 can be electrically coupled to a faceplate 355 which can be used as a plasma generating electrode. In some embodiments, components of the lid stack can act as plasma generating electrodes, such as high-temperature electrodes. Thus, supply components that may be electrically grounded can benefit from an isolator that isolates the associated components from the gas box. An isolation valve may also be included in the system, and may be placed between the piping from the gas panel and the chamber. The valve can prevent material from flowing back into the fluid line during processing operations where additional fluid may not be flowing into the processing area through the annular channel.

[0032]

[0038] Referring to Figure 4, schematic top views of exemplary gas boxes 400 according to several embodiments of the present technology are shown. Gas box 400 is an example of gas box 325 shown in Figure 3 and may include any features, components, or characteristics of that gas box, such as the top view of the first plate described above. Gas box 400 may define a central opening 410 that extends throughout the gas box to allow fluid access into the chamber. A second supply position 415 may be defined to provide fluid access to a concave channel 420, which may include the cover plate described above to form a plenum and may provide fluid access to a number of radially outward positions on the gas box or to the first plate of the gas box as shown. The location of the opening 412 may provide fluid access to a number of openings that extend through the gas box into a plenum formed between the second surface of the first plate of the gas box and the second plate of the gas box. As described above, in some embodiments, a single inlet opening may be used to distribute one or more precursors into a concave channel formed in the first surface 405 of the gas box. The annular channel 425 can also be formed within a gas box extending around the central opening, allowing additional fluid or material to be supplied into the chamber, as will be further described below. In some embodiments, additional flow features may be formed within the gas box, thereby increasing the number of locations where the precursor can be supplied into the annular channel. The illustrated exemplary configuration is not intended to be limited to any type of recurrent channel or outward-extending channel for distributing one or more precursors before supplying them to multiple openings, and it should be understood that any number of modifications are equally included in the Art.

[0033]

[0039] The illustrated concave channel can represent a comprehensive example of a conductance pathway for the supplied precursor, and as previously stated, can represent a recurrent channel, which may extend radially outward to multiple openings or in a controlled pattern to radially distribute the precursor to multiple supply locations within the first plenum. For example, a first concave channel 420 can be defined on the first surface 405 of the first plate. Openings through the manifold and through the cover plate on the concave channel can access the concave channel 420 near the center or midpoint of the channel at position 415, thereby allowing the supplied precursor to move in two directions along the channel. For example, in some embodiments, the concave channel 420 may be a bidirectional channel defined within the plate or gas box, which can distribute the supplied precursor in two directions, radially or transversely outward, from the position where the precursor is supplied to the plate.

[0034]

[0040] The concave channel 420 can extend to two or more distal ends, and in one embodiment, as shown, each can access an additional bidirectional channel, but the channel can extend to more or fewer channels, including a third bidirectional channel that provides access to multiple openings through the gas box. As shown, the distribution at the first distal end of the first concave channel 420 can provide access to two second concave channels 422, which may be second bidirectional channels as shown. Furthermore, the distribution at the distal end of the second concave channels 422 can provide access to a set of third concave channels 424, which may be a third bidirectional channel as shown. Although four such additional channels are shown, it should be understood that embodiments of the art may include any number of channels, such as two, three, four, six, eight, or more channels.

[0035]

[0041] The second and third channels may have similar or different configurations and may be radial or transverse channels in various embodiments. The second concave channel 422 and the third concave channel 424 can each distribute from an intermediate point where the channel receives the supply from the previous concave channel, where the previous channel connects to the channel. As shown, openings 412 may be defined at the two distal ends of the third concave channel, which may be one of a plurality of openings defined through the gas box as previously described, and which can provide fluid access to the first plenum defined in the gas box on the second surface as previously described. Any number of openings can be defined to provide a more uniform supply. The openings are shown aligned with the openings at the opposite distal end of the concave channel, but in some embodiments, the openings 412 may be offset at different radial positions. Many processing improvements may be possible by including additional precursor supply paths through the lid stack or components of the technology. By further adjusting the wafer's film thickness uniformity, material composition, and film properties, processing can be improved, in-plane or other strains can be limited, and the overall film properties of the substrate can be controlled.

[0036]

[0042] Figures 5A and 5B show schematic partial cross-sectional views of exemplary gas boxes 400 according to several embodiments of the present technology, and can show cross-sectional views along lines A and B of the gas box 400 shown in Figure 4, respectively. As described above, the gas box 400 can be contained within any of the aforementioned chambers and can include any of the aforementioned features, components, or properties. For example, the gas box 400 shown in Figure 5A can include a first plate 505 which can define many of the features described above. The gas box can define a central opening 410 extending from a first surface 405 to a second surface 507 of the first plate of the gas box, and as shown, the second plate 510 may be recessed into the first plate 505, so in some embodiments this can define the overall height of the gas box. The first plate 505 can define an annular channel 425 extending around the central opening, which can provide additional flow channels as described below. Furthermore, multiple openings 515 can be defined through the first plate to provide fluid access from the concave channel 520 to the first plenum 525. As shown, the first plate 505 can have stepped recesses defined on the second surface of the plate, thereby allowing the second plate 510 to recess into the plate and simultaneously enabling the formation of the plenum 525, which may be an annular channel for supplying fluid around the gas box.

[0037]

[0043] Referring to Figure 5B, another partial cross-sectional view of the gas box 400 through line B is shown, which does not have to intersect with any of the openings 515 extending through the gas box. As shown, a central opening 410 can be formed through the first plate 505 of the gas box, and an annular channel 425 can be formed around the central channel. As shown in this figure, a number of lateral channels 530 can be formed extending from the annular channel 425 to the outer edge of the gas box, thereby providing access to another zone of the faceplate as described above. Any number of lateral channels 425 can be formed within the gas box, and the lateral channels 425 can be formed between a number of openings extending perpendicularly through the gas box and perpendicular to the lateral channels. In some embodiments, the lateral channels do not have to intersect with any of the openings extending through the first plate. The lateral channels can also extend between the first surface of the first plate and the plenum 525 formed within the first plate. As shown in the figure, a number of bypass openings 535 can also be formed, thereby providing fluid access from the lateral channels through the second surface 507 of the first plate. Any number of bypass openings can be formed from each lateral channel, and the bypass openings can be formed between the central opening 410 and the plenum 525, which is an annular plenum located radially outward from the bypass openings.

[0038]

[0044] Figure 6 shows a schematic diagram of an exemplary gas box plate according to several embodiments of the present technology, and can show the second plate described above. The second plate 600 may be an annular plate and may be installed in a recess of the first plate of the gas box as described above. The second plate 600 can be connected to the first plate in any number of ways and can define several outlet openings 605 that provide fluid access from the first plenum. As shown in the figure, the outlet openings 605 may be formed around the second plate 600 in any number of patterns to provide or direct flow from the plenum formed in the gas box. Although the outlet openings 605 are shown with a uniform distribution and similar size, it should be understood that the outlet openings 605 can be formed in any way. For example, some openings may be skipped or further spaced out, such as being adjacent to one of the openings extending through the gas box, thereby restricting the direct flow path from the openings through the gas box and instead directing the flow through the plenum. Furthermore, the openings may be of different sizes around the second plate. For example, an opening in the first plate that is close to the location where the fluid is supplied may be smaller than other openings, thereby ensuring that the flow or conductance through each outlet opening in the second plate is more uniform in this embodiment of the technology.

[0039]

[0045] Figure 7 shows a schematic perspective view of an exemplary output manifold 700 according to several embodiments of the present technology. The output manifold 700 may include any of the manifold features or characteristics described above and can be used with any of the processing chambers described above. The output manifold 700 can provide fluid access to the processing chamber by supplying one or more precursors or fluids to the gas box. The manifold may define a first channel 705 configured to provide a first flow path for one or more precursors. The manifold may define a second flow path 710 extending into an internal zone 715 of the output manifold, supplying precursors or fluids to a central opening in the gas box. The first channel 705 may intersect with the second channel 710 within the manifold, thereby allowing the inert precursor or one or more processing precursors to begin mixing prior to supply to the internal zone 715 and to the processing chamber.

[0040]

[0046] A third channel 720 may be formed that can supply one or more bypass precursors to the concave channel of the gas box. As previously described, the precursors can be dispersed in a recursive pattern from a single entry location. This can provide a supply at a single location offset from the central position and can still be used to provide a uniform supply to the substrate processing chamber. Furthermore, a fourth channel 725 can be formed through the output manifold to supply the precursors from a remote plasma unit or the like and can be used for cleaning operations or other processing. The fourth channel 725 can supply material to an external zone 730 and can provide fluid access to an annular channel defined around the central opening of the gas box. The external zone 730 is fluidically isolated from the internal zone 715 and can restrict backflow of the precursor or plasma ejecta to any of the other respective channels of the output manifold. By utilizing the chamber configuration according to embodiments of the art, the precursors can be supplied into the processing chamber using multiple channels, thereby allowing for regulating deposition around areas of the substrate being processed.

[0041]

[0047] The above description provides many details for illustrative purposes to provide an understanding of various embodiments of the Technology. However, it will be apparent to those skilled in the art that certain embodiments can be carried out without some of these details, or with additional details.

[0042]

[0048] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, many well-known processes and elements have not been described in order to avoid unnecessarily obscuring the art of the present invention. Accordingly, the above description should not be construed as limiting the scope of the art.

[0043]

[0049] Where a range of values ​​is presented, unless otherwise clearly indicated in the context, each intervening value between the upper and lower limits of that range is also understood to be specifically disclosed down to the smallest unit of the lower limit. Any narrow range between any listed or unlisted intervening values ​​within the stated range, and any other listed or intervening values ​​within that stated range are also included. The upper and lower limits of these smaller ranges may be individually included in or excluded from the range, and each range in which either, neither, or both limits are included in a narrower range is also included in this technology, and the limits specifically excluded in the specified range apply. Where one or both limits are included in the stated range, ranges excluding one or both of the included limits are also included.

[0044]

[0050] As used herein and in the appended claims, the singular forms “a,” “an,” and “the” include plural references unless otherwise specified in the context. Thus, for example, a reference to “channel” includes multiple such channels, and a reference to “opening” includes one or more openings and their equivalents known to those skilled in the art.

[0045]

[0051] Furthermore, the terms “comprise(s),” “comprising,” “contain(s),” “containing,” “include(s),” and “including,” as used herein and in the claims, are intended to identify the presence of the described features, integers, components, or steps, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A plate body having a first surface and a second surface opposite to the first surface, A central opening extending from the first surface to the second surface is defined, A plurality of openings extending from the first surface to the second surface are defined, An inner concave channel is defined within the first surface, A plate body that defines an outward concave channel within the first surface. Equipped with, The plate body defines a recurrent channel, the recurrent channel includes the inner concave channel and the outer concave channel, the inner concave channel provides access to the outer concave channel, The plurality of openings extend from the recurrent channel to the second surface, The aforementioned recurrent channel is provided radially outward from the central opening in the semiconductor processing chamber gas box plate.

2. The semiconductor processing chamber gas box plate according to claim 1, wherein the plate body defines an annular recess on the second surface, the annular recess is defined by an inner wall and an outer wall, and each of the inner wall and the outer wall is concentric with the central opening.

3. The semiconductor processing chamber gas box plate according to claim 2, wherein each of the plurality of openings extends into the annular recess.

4. The semiconductor processing chamber gas box plate according to claim 1, wherein the outer concave channel is a stepped recess.

5. The semiconductor processing chamber gas box plate according to claim 1, wherein the outer concave channel extends in one or more directions around the central opening.

6. The semiconductor processing chamber gas box plate according to claim 1, wherein the outer concave channel includes a ledge.

7. The semiconductor processing chamber gas box plate according to claim 1, wherein the inner concave channel includes an annular channel extending around the central opening.

8. The semiconductor processing chamber gas box plate according to claim 1, wherein the plate body defines a supply position that provides fluid access to the outer concave channel.

9. The semiconductor processing chamber gas box plate according to claim 8, wherein the supply position is provided radially inward from the outer concave channel.

10. The semiconductor processing chamber gas box plate according to claim 1, wherein the outer concave channel provides fluid access to a number of radially outward positions on the plate body.

11. The semiconductor processing chamber gas box plate according to claim 1, wherein the outer concave channel includes a recursive channel.

12. The semiconductor processing chamber gas box plate according to claim 11, wherein the recursive channels extend radially outward to the plurality of openings.

13. The semiconductor processing chamber gas box plate according to claim 12, wherein the recursive channel includes a first arc-shaped segment.

14. The semiconductor processing chamber gas box plate according to claim 13, wherein the entrance to the first arc-shaped segment is provided near the midpoint of the first arc-shaped segment.

15. The semiconductor processing chamber gas box plate according to claim 13, wherein the distal end of the first arc-shaped segment includes a first radial segment extending radially outward.

16. The semiconductor processing chamber gas box plate according to claim 15, wherein the second arc-shaped segment extends from each of the distal ends of the first arc-shaped segment.

17. The semiconductor processing chamber gas box plate according to claim 16, wherein each distal end of the second arc-shaped segment includes a second radial segment extending radially outward.

18. The semiconductor processing chamber gas box plate according to claim 16, wherein the third arc-shaped segment extends from each of the distal ends of the second arc-shaped segment.

19. The semiconductor processing chamber gas box plate according to claim 1, wherein the plate body defines a plurality of lateral channels extending from the inner concave channel to the outer edge of the plate body, and the plurality of lateral channels do not intersect with any of the plurality of openings.

20. The semiconductor processing chamber gas box plate according to claim 19, wherein the plate body defines a plurality of bypass openings extending from a lateral channel through the second surface.

Images