Imprinting apparatus, imprinting method, and method for manufacturing articles

Abstract

To provide an imprint device that can prevent curing of an imprint material outside an imprint area for forming a pattern.SOLUTION: An imprint device performs imprint processing of, by using a mold having a pattern part, forming a pattern of an imprint material sequentially in a plurality of imprint areas on a substrate to which the imprint material is applied, and the imprint device has: a first gas supply unit that supplies a first gas for promoting filling the imprint material into the pattern part; a second gas supply unit that supplies a second gas for inhibiting curing of the imprint material; and a control unit that controls the second gas supply unit to supply the second gas to a space around the gap between the mold and the substrate from when the mold is separated from the imprint material in a first imprint area on the substrate until when the pattern part is brought into contact with the imprint material in a second imprint area on which the imprint processing is performed next.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to an imprint apparatus, an imprint method, and a method for manufacturing an article.

Background Art

[0002] As the demand for miniaturization of semiconductor devices progresses, in addition to conventional photolithography technology, a microfabrication technology that forms a pattern on a substrate by molding (molding) and curing an imprint material on the substrate using a mold (die) has attracted attention. Such a technology is called an imprint technology, and it is possible to form a fine pattern on the order of several nanometers on the substrate.

[0003] As one of the imprint technologies, for example, there is a photo-curing method. An imprint apparatus that employs the photo-curing method contacts a mold with a photo-curable imprint material applied on a substrate (imprinting), irradiates light to cure the imprint material, and separates the mold from the cured imprint material (demolding) to form a pattern on the substrate. Here, during imprinting, air (residual gas) between the mold and the imprint material may be mixed into the uncured imprint material as bubbles, resulting in unfilled defects (pattern defects).

[0004] Therefore, in Patent Document 1, the space between the mold and the substrate is saturated with a gas that is highly soluble or highly diffusible with respect to the imprint material, or both, and does not contain oxygen (hereinafter simply referred to as "gas") to suppress the remaining of bubbles. Further, the imprint apparatus of Patent Document 2 is configured to supply gas in a state where the mold and the imprint material are in contact, and to supply gas to the space between the mold and the substrate when separating the mold and the imprint material.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] In the above-described imprint apparatus, when irradiating the imprint material in the imprint area to be patterned with light (irradiation light) necessary for sufficient curing, the light may also irradiate the imprint material supplied to adjacent areas outside the imprint area. In this case, a portion of the imprint material supplied to adjacent areas outside the imprint area to be patterned may harden. Therefore, when sequentially forming patterns in multiple imprint areas on a substrate, a portion of the imprint material may harden before pattern formation, potentially resulting in pattern formation defects.

[0007] Imprint materials used in imprint devices employing photocuring have the characteristic that curing is inhibited if oxygen is present in the space above the supplied area. When the imprint material is cured with the space between the substrate and the mold filled with the gas described in Patent Documents 1 and 2, oxygen is absent in adjacent or nearby areas outside the imprint area where the pattern is formed. Therefore, if light is irradiated in this state, a portion of the imprint material in adjacent or nearby areas outside the imprint area where the pattern is formed may harden.

[0008] Therefore, the present invention aims to provide an imprinting apparatus capable of suppressing the hardening of the imprint material outside the imprinting area where the pattern is formed. [Means for solving the problem]

[0009] To achieve the above objective, an imprint apparatus as one aspect of the present invention is an imprint apparatus that performs an imprint process to sequentially form a pattern of imprint material in a plurality of imprint regions on a substrate coated with imprint material using a mold having a pattern portion, and comprises a first gas supply unit that supplies a first gas to promote the filling of the imprint material into the pattern portion, The first gas supply unit and A control unit for controlling the second gas supply unit is provided. The control unit controls the first gas supply unit to supply the first gas to the space around the gap between the mold and the substrate before the mold is separated from the imprint material in the first imprint area while the pattern portion is in contact with the imprint material in the first imprint area on the substrate, and controls the second gas supply unit to supply the second gas to the space around the gap between the mold and the substrate after the mold is separated from the imprint material in the first imprint area while the space around the mold is filled with the first gas, and before the pattern portion is brought into contact with the imprint material in the second imprint area to be imprinted next. It is characterized by the following: [Effects of the Invention]

[0010] According to the present invention, it is possible to provide an imprinting apparatus that can suppress the hardening of the imprint material outside the imprint area where the pattern is formed. [Brief explanation of the drawing]

[0011] [Figure 1] This is a schematic diagram showing the imprint apparatus according to Example 1. [Figure 2] This figure shows the gas supply process and curing process using the imprint apparatus according to Example 1. [Figure 3] This is a flowchart showing the gas supply process and curing process using the imprint apparatus of Example 1. [Figure 4] This figure shows an example of the gas supply timing according to Example 1. [Figure 5] This figure shows the gas supply process and curing process in the imprint region where the imprint process according to Example 1 is performed first. [Figure 6] This is a schematic diagram illustrating the manufacturing method of an article. [Modes for carrying out the invention]

[0012] Below, preferred embodiments of the present invention will be described with reference to the attached drawings, using examples and figures. In each figure, the same reference numeral is used for the same member or element, and redundant explanations are omitted or simplified. In the following figures, the Z-axis is taken parallel to the optical axis of the illumination system that irradiates the imprint material 7 on the substrate 2 with illumination light 21, and the X-axis and Y-axis are taken in a plane perpendicular to the Z-axis, where they are orthogonal to each other.

[0013] <Example 1> Figure 1 shows a schematic configuration of the imprint apparatus 1 of the present invention. Figure 1(A) is a view of the imprint apparatus 1 from the -Y direction, and Figure 1(B) is a view of the area around the mold 4 from the +Z direction to the -Z direction.

[0014] The imprint apparatus 1 according to Example 1 is used in the manufacture of devices such as semiconductor devices, and is an apparatus that forms an imprint pattern on the substrate 2 by molding an uncured imprint material (resin) 7 on the substrate 2 using a mold 4. Hereinafter, the imprint apparatus employing the photocuring method will be described.

[0015] The imprint process (imprint step) performed to form a pattern of imprint material 7 on the substrate 2 is described below. In Example 1, multiple imprint areas 8 are set on the substrate 2, and multiple patterns of imprint material are formed on the substrate 2 by sequentially performing the imprint process on these imprint areas.

[0016] As an imprint process, after the mold 4 and the substrate 2 are positioned in a predetermined positional relationship, the mold holding part 6 is moved in the -Z direction, and the pattern part 5 is brought into contact with the imprint material 7 in the imprint area 8 (contact step). Next, with the pattern part 5 of the mold 4 in contact with the imprint material 7, the imprint material 7 is cured (curing step). Next, the pattern part 5 of the mold 4 is separated from the imprint material 7 in the imprint area 8 (demolding step). By performing this series of steps, a pattern of the imprint material can be formed on the substrate 2. This imprint process is performed for each imprint area 8 where a pattern is formed on the substrate 2. Further, the above-described imprint process may include a step (coating step) of coating (supplying) the imprint material 7 onto the imprint area 8 of the substrate 2 before the contact step.

[0017] The substrate 2 is, for example, a single crystal silicon substrate or an SOI (Silicon on Insulator) substrate, and an imprint material 7 that is pattern-formed by the pattern part 5 formed on the mold 4 is applied to this surface to be processed. The substrate 2 may also be various substrates such as a gallium arsenide wafer, a composite adhesive wafer, a glass wafer containing quartz as a material, a liquid crystal panel substrate, and a rectangle. Further, the outer shape may not only be circular but also square or the like. In that case, the outer shape of the substrate chuck 200 described later may be made to match the outer shape of the substrate 2.

[0018] The mold (die) 4 has a rectangular outer peripheral shape and has a pattern part (mesa part) 5 provided with a pattern (concavo-convex pattern such as a circuit pattern to be transferred to the substrate 2) formed three-dimensionally on the surface (pattern surface) facing the surface of the substrate 2. The mold 4 is made of a material that can transmit irradiation light 21 such as ultraviolet light, for example, quartz. Further, the mold 4 may have a cavity with a circular planar shape and a certain depth on the surface irradiated with the irradiation light 21 irradiated from the light irradiation part 20.

[0019] The imprint material 7 is a photocurable resin having the property of curing by receiving irradiation light 21 such as ultraviolet light, and is appropriately selected according to various conditions such as a semiconductor device manufacturing process. The photocurable resin contains at least a polymerizable compound and a photoinitiator, and may contain a non-polymerizable compound or a solvent as necessary. In Example 1, the substrate 2 is held by the substrate stage 3 in a state where the imprint material 7 is applied (supplied, coated) over the entire surface on the substrate 2.

[0020] In addition, when the imprint material 7 is applied (coated) on the substrate 2, it may be applied in a film shape on the substrate 2 by a spin coater or a slit coater. Further, it may be applied on the substrate 2 in a droplet shape, or in an island shape or a film shape formed by connecting a plurality of droplets, by a supply device such as a liquid injection head.

[0021] The imprint apparatus 1 in Example 1 includes a substrate stage 3, a mold holding part 6, a gas supply part, a first gas control part 11, a second gas control part 14, a control part, and a light irradiation part 20.

[0022] The substrate stage 3 holds the substrate 2 and performs alignment between the mold 4 and the imprint region 8 when the mold 4 comes into contact (presses) with the imprint region 8 on the substrate 2 and the imprint material 7. That is, the substrate stage 3 functions as a substrate moving part that relatively moves the substrate 2 to perform alignment between the mold 4 and the imprint region 8.

[0023] In addition, the substrate stage 3 has a stage drive mechanism (not shown) that enables movement in each axial direction. The stage drive mechanism may be composed of a plurality of drive systems such as a coarse movement drive system and a fine movement drive system in each of the X-axis and Y-axis directions. Further, it may be configured to have a drive system for position adjustment in the Z-axis direction, a position adjustment function in the θ direction of the substrate 2, or a tilt function for correcting the tilt of the substrate 2.

[0024] The mold holding unit 6 has a drive mechanism that moves the mold 4 while holding it. The mold holding unit 6 can hold the mold 4 by attracting the outer peripheral region of the irradiation surface of the irradiation light 21 on the mold 4 with vacuum attraction force or electrostatic force.

[0025] The mold holding unit 6 also functions as a moving unit that moves the mold 4 relatively in each axial direction to selectively press or pull the mold 4 against the imprint material 7 on the substrate 2. Furthermore, to accommodate high-precision positioning of the mold 4, it may be composed of multiple drive systems, such as a coarse drive system and a fine drive system. In addition, it may be configured to have position adjustment functions not only in the Z-axis direction but also in the X-axis direction, Y-axis direction, or the θ direction of each axis, as well as a tilt function to correct the inclination of the mold 4.

[0026] The contact and separation of the pattern portion 5 of the mold 4 with the imprint material 7 in the imprint device 1 may be achieved by moving the mold 4 in the Z-axis direction, or by moving the substrate stage 3 in the Z-axis direction. Alternatively, both may be moved relatively.

[0027] The gas supply unit (not shown) consists of a first gas supply unit 10 and a second gas supply unit 13. The first gas supply unit 10 supplies a first gas 9 to the space between the mold 4 and the substrate 2, that is, the space around the gap between the mold 4 and the substrate 2, to promote the filling of the imprint material into the pattern area. By supplying the first gas 9, the first gas supply unit 10 replaces the space between the mold 4 and the substrate 2 with the first gas 9.

[0028] Here, if air bubbles are trapped between the mold 4 and the imprint material 7 during the curing of the imprint material 7, the imprint material 7 will not fill the areas containing the bubbles, potentially causing defects in the pattern of the cured material. Therefore, it is preferable that the first gas 9 supplied by the first gas supply unit 10 is a gas with a lower oxygen concentration than air in order to suppress oxygen inhibition during the curing of the imprint material 7, and that a permeable gas that easily penetrates the mold 4 or the imprint material 7 during stamping is used. Furthermore, it is even more preferable that the first gas 9 is an oxygen-free gas.

[0029] As the permeable gas, for example, a noble gas such as helium (He) can be used. Furthermore, the first gas 9 may be a gas containing nitrogen gas and at least one condensable gas (for example, pentafluoropropane (PFP)).

[0030] As shown in Figure 1(B), the first gas supply unit 10 has a plurality of gas supply ports, namely gas supply ports 10a, 10b, 10c, and 10d. The first gas 9 supplied by the first gas supply unit 10 is supplied from these gas supply ports 10a, 10b, 10c, and 10d into the space between the mold 4 and the substrate 2. Also, as shown in Figure 1(B), the gas supply ports 10a, 10b, 10c, and 10d are arranged on the outer circumference of the mold 4 so as to surround the mold 4. Although the first gas supply unit 10 has four gas supply ports as described above, this is just an example, and it may have four or more.

[0031] The first gas control unit 11 includes a CPU and memory (storage unit), and is composed of at least one computer. The first gas control unit 11 is connected to the first gas supply unit 10 via a line and controls the first gas supply unit 10. By controlling the first gas supply unit 10, the supply amount or supply time of the first gas 9 is controlled for each gas supply port 10a, 10b, 10c, and 10d. That is, the first gas control unit 11 can control the supply amount or supply time of the first gas 9 supplied from the gas supply ports 10a, 10b, 10c, and 10d by controlling the first gas supply unit 10 according to the position of the imprint area 8 on the substrate 2. In addition to controlling the supply amount and supply time of the first gas 9 for each gas supply port 10a, 10b, 10c, and 10d, the first gas control unit 11 can also control the start and stop of the supply of the first gas 9.

[0032] The second gas supply unit 13 supplies the second gas 12 to the space between the mold 4 and the substrate 2, that is, the space around the gap between the mold 4 and the substrate 2. By supplying the second gas 12, the second gas supply unit 13 can increase the concentration of the second gas 12 near the pattern area 5. The second gas 12 supplied by the second gas supply unit 13 is a gas that inhibits the hardening of the imprint material 7 by irradiation with the irradiation light 21, and is, for example, a gas containing oxygen.

[0033] As shown in Figure 1(B), the second gas supply unit 13 has a plurality of gas supply ports, namely gas supply ports 13a, 13b, 13c, and 13d. The second gas 12 is supplied from the gas supply ports 13a, 13b, 13c, and 13d of the second gas supply unit 13 into the space between the mold 4 and the substrate 2. Also, as shown in Figure 1(B), the gas supply ports 13a, 13b, 13c, and 13d are arranged on the outer circumference of the mold 4 so as to surround the mold 4. Although the second gas supply unit 13 has eight gas supply ports as shown in Figure 1(B), this is just an example, and there may be eight or more or eight or fewer. Furthermore, as shown in Figure 1(B), it is preferable that the number of gas supply ports in the second gas supply unit 13 is greater than the number of gas supply ports in the first gas supply unit 10.

[0034] The second gas control unit 14 includes a CPU and memory (storage unit), and is composed of at least one computer. The second gas control unit 14 is connected to the second gas supply unit 13 via a line and controls the second gas supply unit 13. By controlling the second gas supply unit 13, the amount or duration of supply of the second gas 12 is controlled for each gas supply port 13a, 13b, 13c, and 13d. In other words, the second gas control unit 14 can control the amount or duration of supply of the second gas 12 supplied from the gas supply ports 13a, 13b, 13c, and 13d by controlling the second gas supply unit 13 according to the position of the imprint area 8 on the substrate 2. Furthermore, the second gas control unit 14 can control the supply amount or supply time of the second gas 12 for each gas supply port 13a, 13b, 13c, and 13d, as well as control the start and stop of the supply of the second gas 12.

[0035] The control unit (not shown) includes a CPU and memory (storage unit), and consists of at least one computer. The control unit is connected to each component of the imprint device 1 via a communication line. The control unit also comprehensively controls the operation of each component of the entire imprint device 1 according to a program stored in memory. The control unit may also be configured as an integral part of the other parts of the imprint device 1 (within a common enclosure). Furthermore, it may be configured separately from the other parts of the imprint device 1 (in a separate enclosure), or it may be installed in a location separate from the imprint device 1 and controlled remotely.

[0036] Furthermore, the control unit is connected to the first gas control unit 11 and the second gas control unit 14 via a circuit and controls each of the respective control units. Specifically, it controls the first gas supply unit 10, and in addition to controlling the supply amount and supply time of the first gas 9 supplied from the gas supply ports 10a, 10b, 10c, and 10d, it can also control the start and stop of the supply of the first gas 9. In addition, it controls the second gas supply unit 13, and in addition to controlling the supply amount and supply time of the first gas 9 supplied from the gas supply ports 13a, 13b, 13c, and 13d, it can also control the start and stop of the supply of the first gas 9.

[0037] The light irradiation unit 20 irradiates the imprint material 7 on the substrate 2 with irradiation light 21 during the imprint process. The light irradiation unit 20 consists of an exposure light source (not shown) and an optical element that adjusts the irradiation light 21 emitted from the exposure light source to light suitable for imprinting.

[0038] As described above, the imprint material 7 includes at least a polymerizable compound and a photopolymerization initiator. The curing of the imprint material 7 is caused by a polymerization reaction of the polymerizable compound by radicals generated from the photopolymerization initiator when irradiated with light 21. Oxygen reacts with the radicals generated from the photopolymerization initiator by irradiation with light 21, eliminating the radicals. This inhibits the polymerization reaction of the polymerizable compound. This means that the curing of the imprint material 7 is inhibited.

[0039] Here, with the pattern portion 5 in contact with the imprint material 7 in the imprint area 8 on the substrate 2, the supply of the second gas 12 near the pattern portion 5 inhibits (suppresses) the hardening of the imprint material 7 in adjacent areas outside the imprint area 8.

[0040] Figure 2 shows an example of the gas supply process and curing process according to Example 1. Figure 2(A) shows the state in which the pattern portion 5 of the mold 4 is in contact with the imprint material 7 in the imprint area 80. Figure 2(B) shows the state in which the mold 4 is being pulled away from the imprint area 80. Figure 2(C) shows the state in which the mold 4 is being moved from the imprint area 80 to the imprint area 81. Figure 2(D) shows the state in which the pattern portion 5 is in contact with the imprint material 7 in the imprint area 81 and the imprint material 7 is being filled. Figure 2(E) shows the state in which the imprint material 7 in the imprint area 81 is irradiated with light 21 and the imprint material 7 filled in the pattern portion 5 is being cured. Figure 3 is a flowchart of the gas supply and curing process by the imprint apparatus of Example 1. Figure 4 shows an example of the gas supply timing according to Example 1.

[0041] Here, referring to the flowcharts in Figures 2 and 3, an example of the gas supply method in Embodiment 1 when imprinting is performed in the order of imprint area 80 and the imprint area 81 adjacent to imprint area 80 will be described below. Note that each operation (process) shown in the flowchart in Figure 3 is controlled by the control unit executing a computer program.

[0042] Furthermore, an imprint area that is imprinted immediately before an imprinting process is performed on a given imprint area is also called a pre-imprint area (previous imprint area). In this case, imprint area 80 corresponds to the pre-imprint area (first imprint area). Also, the given imprint area here is also called a predetermined imprint area, and in this case, imprint area 81 corresponds to the predetermined imprint area (second imprint area).

[0043] First, in step S101, the control unit drives the stage drive mechanism to move the substrate stage 3 so that the pattern portion 5 of the mold 4 is directly above the imprint area 81, and aligns it. Next, as shown in Figure 2(A), when forming a pattern in the imprint area 80, the control unit supplies the first gas 9 before separating the mold 4 while the imprint material 7 on the imprint area 80 and the pattern portion 5 are in contact (first gas supply step). Note that even if the pattern portion 5 is being filled with the imprint material 7 or has already been filled, the first gas 9 may be supplied at any time as long as the pattern portion 5 is in contact with the imprint material 7.

[0044] At this time, it is preferable to supply the first gas 9 from the gas supply port of the first gas supply unit 10 located on the side of the imprint region 81 (second imprint region) where pattern formation will be performed after the imprint region 80 (first imprint region). In this explanation, since a pattern is formed in the imprint region 81 after the imprint region 80, the first gas 9 is supplied from the gas supply port 10a as shown in Figure 2(A). However, regardless of which imprint region it is, it is preferable to supply the first gas 9 from the gas supply port located on the side of the imprint region where pattern formation will be performed next, as described above.

[0045] When the imprint material 7 and the pattern portion 5 of the imprint area 80 are in contact, the gap between the mold 4 and the substrate 2 is extremely narrow, only equal to the thickness ht of the pattern portion 5. Therefore, the fluid resistance between the mold 4 and the substrate 2 is very high, and the first gas 9 supplied during filling hardly penetrates between the mold 4 and the substrate 2, increasing the concentration of the first gas 9 in the space between the mold 4 and the first gas supply unit 10.

[0046] Furthermore, once the pattern section 5 has been filled with the imprint material, light from the light irradiation section 20 is shone onto the imprint material 7 on the imprint area 80 to cure the imprint material 7 (curing process). The curing of the imprint material 7 is performed with the pattern section 5 in contact with the imprint material 7.

[0047] Next, in step S102, the control unit separates the pattern portion 5 from the imprint area 80 (release step), as shown in Figure 2(B). When the pattern portion 5 is separated from the imprint area 80 while the space around the mold 4 is filled with the first gas 9, the volume of the gap between the mold 4 and the substrate 2 increases, resulting in low pressure (negative pressure) in the space around the mold 4. This causes flow F1 to occur, and the first gas 9 is drawn between the mold 4 and the substrate 2 (drawn in the positive direction of the X axis (leftward direction in the figure)).

[0048] Furthermore, when separating the pattern portion 5 from the imprint area 80, the mold 4 and the substrate 2 are separated until the gap between them becomes H1, as shown in Figure 2(C). H1 represents the distance from the substrate 2-side surface of the mold 4 to the surface of the substrate 2 in the Z direction. Note that H1 can be set arbitrarily to any value as long as it is not smaller than the separation distance in the conventional demolding process.

[0049] Next, in step S103, the control unit moves the substrate stage 3 so that, after the mold 4 and the substrate 2 have separated to H1, the pattern section 5 is positioned directly above the imprint area 81, which is the next imprint area where the pattern will be formed, after moving from the imprint area 80.

[0050] At this time, the first gas 9 is drawn in further in the positive direction of the X axis by the Couette flow F2 accompanying the movement of the substrate stage 3, compared to the time in Figure 2(B). At this time, when the demolding operation described above is completed and the gap between the mold 4 and the substrate 2 is H1, the fluid resistance between the mold 4 and the substrate 2 becomes lower compared to during filling.

[0051] Next, in step S104, the second gas supply unit 13 supplies the second gas 12 (second gas supply step). At this time, the second gas should be supplied between the time the pattern unit 5 moves from the imprint area 80 to the time the pattern unit 5 of the mold 4 comes into contact with the imprint material 7 of the imprint area 81, which is the next imprint area where the pattern will be formed. It is preferable to supply the second gas from the second gas supply unit between the time the mold 4 is separated from the imprint area 80 and the time the imprint area 81 is directly below the pattern unit 5.

[0052] As a result, a poiseuille flow F3 occurs between the mold 4 and the substrate 2, and the second gas 12 enters the space between the mold 4 and the substrate 2. However, at this time, the volume between the mold 4 and the substrate 2 is constant, so the pressure between the mold 4 and the substrate 2 is also normal pressure relative to the space around the mold 4. At this time, the poiseuille flow F3 generated is smaller than the flow F1 generated during the demolding operation, so a large amount of the second gas 12 does not enter the space between the mold 4 and the substrate 2, and the concentration of the first gas 9 does not decrease significantly.

[0053] Next, in step S105, as shown in Figure 2(D), the pattern portion 5 is brought into contact with the imprint material 7 in the imprint area 81, and the imprint material 7 is filled into the pattern portion 5. At this time, the first gas 9 that has been drawn between the pattern portion 5 and the imprint area 81 is spread out as the pattern portion 5 and the imprint area 81 approach each other. As a result, the pattern portion 5 can be pressed against the imprint material 7 with the imprint area 81 sufficiently replaced by the first gas 9.

[0054] Furthermore, at this time, the second gas 12 supplied between the mold 4 and the substrate 2 in the gap H1 increases the concentration of the second gas 12 in the space surrounding the pattern portion 5. That is, it increases the oxygen concentration in the space surrounding the pattern portion 5. It is desirable to keep the amount of the second gas 12 supplied within a range that does not hinder the filling when the pattern portion 5 and the imprint material 7 are in contact.

[0055] Next, in step S106, as shown in Figure 2(E), the imprint area 81 in which the imprint material 7 has been filled is irradiated with light 21 to cure the imprint material 7 filled in the pattern area 5. At this time, if the light 21 is irradiated to the extent necessary to sufficiently cure the imprint material 7 filled in the pattern area 5, the irradiation area of ​​the light 21 may spread outside the imprint area 81 to adjacent imprint areas, as shown by the black dashed line in Figure 2(E).

[0056] In Example 1, a second gas 12 that inhibits the curing of the imprint material is supplied to the adjacent imprint area outside the imprint area 81, particularly to the space over the uncured imprint material 7 that is scheduled to be imprinted later. Therefore, the curing of the uncured imprint material 7 on the imprint area that is scheduled to be imprinted later can be suppressed.

[0057] Here, when the imprint area 80 described above is the first shot, that is, the area where the initial imprint process is performed on the substrate 2, the method of supplying gas in the space between the imprint area 80 and the pattern area 5 will be explained with reference to Figure 5.

[0058] Figure 5 shows the gas supply and curing process in the imprint area where the initial imprint processing is performed on the substrate 2 according to Example 1. In the example of Figure 5, the imprint area 80 is the pre-imprint area (first imprint area), and the imprint area 81 is the predetermined imprint area (second imprint area). Furthermore, explanations that overlap with the explanation of Figure 2 are omitted.

[0059] First, as shown in Figure 5(A), the first gas 9 is supplied with a gap of H1 between the mold 4 and the substrate 2 and with the imprint area 80 positioned towards the gas supply port 10a. Next, as shown in Figure 5(B), the substrate stage 3 is moved so that the imprint area 80 is directly below the pattern area 5.

[0060] At this time, the first gas 9 is drawn between the mold 4 and the substrate 2 by the Couette flow F2 accompanying the movement of the substrate stage 3 (drawn in the positive direction of the X axis (leftward in the figure)). This allows the space between the imprint area 80 and the pattern area 5 to be filled with the first gas 9. Next, as shown in Figure 5(C), the second gas 12 is supplied. This causes a Poiseuille flow F3 to occur between the mold 4 and the substrate 2, and the second gas 12 enters the space between the mold 4 and the substrate 2.

[0061] Next, as shown in Figure 5(D), the pattern portion 5 is brought into contact with the imprint material 7 in the imprint area 80, and the imprint material 7 is filled into the pattern portion 5. At this time, the second gas 12 supplied between the gap H1 between the mold 4 and the substrate 2 increases the concentration of the second gas 12 in the space surrounding the pattern portion 5, that is, the oxygen concentration.

[0062] Next, as shown in Figure 5(E), the imprint area 80 in which the pattern area 5 has been filled with imprint material 7 is irradiated with light 21 to cure the imprint material 7 filled in the pattern area 5. At this time, the irradiation area of ​​the light 21 may extend to the imprint area 81 as shown by the black dashed line, but a second gas 12 that inhibits the curing of the imprint material is supplied to the space on the uncured imprint material 7 in the imprint area 81. Therefore, the curing of the imprint material 7 on the imprint area 81 can be suppressed. In subsequent imprint processing in the imprint area, the imprint processing is carried out sequentially in the order shown in Figure 3.

[0063] As described above, according to Example 1, in addition to promoting the filling of the imprint material 7 into the pattern portion 5 of the mold 4, an imprint apparatus 1 is provided that enables the suppression of hardening of the imprint material 7 in adjacent areas outside the imprint area where the pattern is formed.

[0064] Furthermore, the first gas 9 or the second gas 12 may be supplied from a gas supply port located forward in the direction of movement from the pre-imprinted area (first imprinted area) toward the direction toward which a predetermined imprinted area (second imprinted area) is located.

[0065] Furthermore, the gas supply ports 10a, 10b, 10c, and 10d may be placed in locations other than those shown in Figure 1(B), as long as they surround the mold 4 (surrounding it from four directions). Similarly, the gas supply ports 13a, 13b, 13c, and 13d may be placed in locations other than those shown in Figure 1(B), as long as they surround the mold 4 (surrounding it from four directions).

[0066] Furthermore, the first gas supply unit 10 may have a suction function that can draw in surrounding gases in addition to supplying the first gas 9. Similarly, the second gas supply unit 13 may have a suction function that can draw in surrounding gases in addition to supplying the second gas 12.

[0067] <Example 2> The following describes the imprint apparatus 1 according to Embodiment 2 of the present invention. Matters not mentioned in Embodiment 2 follow those of Embodiment 1. Furthermore, since the imprint apparatus 1 of Embodiment 2 has the same configuration as the imprint apparatus 1 of Embodiment 1, the description of the configuration of the imprint apparatus 1 is omitted. In Embodiment 2, the supply timing of the second gas 12 is different from that of Embodiment 1. Since the gas supply and curing treatment other than the supply timing of the second gas 12 are the same as in Embodiment 1, the explanation of the overlapping parts is omitted.

[0068] In Example 2, once the demolding operation of the pre-imprinted area, the imprinted area 80, is completed, the distance between the mold 4 and the substrate 2 becomes constant, and the pressure between the mold 4 and the substrate 2 becomes constant, the supply of the second gas 12 is started. Specifically, the second gas 12 is supplied after the separation operation of the mold 4 is completed, before moving to the next imprinted area where the pattern will be formed (while the operation is stopped), and when the pressure between the mold 4 and the substrate 2 becomes stable. The supply of the second gas 12 at this time may be terminated before moving to the next imprinted area, the imprinted area 81, where the pattern will be formed.

[0069] Alternatively, the supply of the second gas 12 may begin after the movement from the imprint area 80 to the next imprint area 81 where the pattern will be formed is complete, and end before the pattern portion 5 comes into contact with the imprint material 7 in the imprint area 81.

[0070] As a result, the second gas 12 is not supplied while the substrate stage 3 is moving. During the movement of the substrate stage 3, unwanted pressure fluctuations and gap distance fluctuations may occur between the mold 4 and the substrate 2. If the second gas 12 is supplied in this state, the accuracy of the supply amount control will decrease, and the accuracy of the oxygen concentration control around the pattern section 5 may decrease.

[0071] As described above, the imprint apparatus 1 of Example 2, in addition to the effects of Example 1, allows for more precise control of the oxygen concentration around the pattern area 5 by not supplying the second gas 12 while the substrate stage 3 is moving.

[0072] <Example 3> The following describes the imprint apparatus 1 of Embodiment 3 of the present invention. Matters not mentioned in Embodiment 3 follow those of Embodiments 1 and 2. Also, since the imprint apparatus 1 of Embodiment 3 has the same configuration as the imprint apparatus 1 of Embodiment 1, the description of the configuration of the imprint apparatus 1 is omitted. Embodiment 3 shows an example in which the supply amount of the second gas 12 is controlled to be a different amount than that of Embodiment 1. The gas supply process and curing process other than the supply amount of the second gas 12 are the same as in Embodiment 1, so the explanation of the overlapping parts is omitted.

[0073] In Embodiment 3, the distance H1 between the mold 4 and the substrate 2 is changed between the completion of the demolding operation of the pre-imprinted area, imprint area 80, and the time when the pattern portion 5 is directly beneath the imprint area 81 where the next pattern will be formed. The control unit controls the separation distance between the mold 4 and the substrate 2 so that H1 is larger than during the normal demolding process. This changes the distance between the pattern portion 5 and the surface of the substrate 2. Alternatively, H1 may be changed between the completion of the demolding operation of the imprint area 80 and the time when the pattern portion 5 contacts the imprint material 7 of the next imprint area 81.

[0074] The poiseuille flow F3 generated between the mold 4 and the substrate 2 when the second gas 12 is supplied depends on the distance H1 between the mold 4 and the substrate 2. Here, the larger H1, the greater the flow rate. Therefore, by changing H1, the amount of the second gas 12 that enters between the mold 4 and the substrate 2 can be controlled.

[0075] Furthermore, the amount of the second gas 12 supplied may be changed depending on the position of the imprint area 8 on the substrate 2. When the substrate 2 is mounted on the substrate stage 3, steps and gaps may occur between the substrate 2 and the substrate stage 3. In this case, when the imprint area 8 is located on the outer periphery of the substrate 2 (the edge of the substrate 2), the amount of the second gas 12 that enters the space between the mold 4 and the substrate 2 when the second gas 12 is supplied may differ from when the imprint area 8 is located in the center of the substrate 2.

[0076] Therefore, the supply flow rate or supply time of the second gas 12 supplied from the second gas supply unit 13 may be controlled to adjust according to the position of the imprint area 8 on the substrate 2. This makes it possible to control the concentration (oxygen concentration) of the second gas 12 around the pattern area 5 to a desired value, regardless of the position of the imprint area 8 on the substrate 2.

[0077] As described above, the imprint apparatus 1 of Example 3 allows for high-precision control of the oxygen concentration around the pattern portion 5 by controlling the supply amount of the second gas 12, in addition to the curing process of Example 1.

[0078] <Examples relating to the method of manufacturing articles> The method for manufacturing articles according to this embodiment is suitable for manufacturing articles such as microdevices, semiconductor devices, and elements having microstructures. The method for manufacturing articles according to this embodiment includes the steps of forming a pattern on a composition coated on a substrate using the imprint apparatus 1 described above (a step of processing the substrate) and processing the substrate on which the pattern has been formed in the step described above. Furthermore, this manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, composition removal, dicing, bonding, packaging, etc.). The method for manufacturing articles according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the articles.

[0079] The patterns of the cured material formed using the imprint apparatus 1 are used permanently on at least a part of various articles, or temporarily during the manufacturing of various articles. Articles include electrical circuit elements, optical elements, MEMS, recording elements, sensors, or molds. Examples of electrical circuit elements include volatile or non-volatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, as well as semiconductor elements such as LSI, CCD, image sensors, and FPGAs. Examples of molds include molds for substrate processing such as imprints.

[0080] The pattern of the cured material is either used as is as a component of at least a part of the above article, or temporarily used as a composition mask. After etching or ion implantation is performed during the substrate processing process, the composition mask is removed.

[0081] Next, the specific manufacturing method of the article will be explained with reference to Figure 6. As shown in Figure 6(A), a substrate 1z such as a silicon substrate with a workpiece 2z such as an insulator formed on its surface is prepared, and then composition 3z is applied to the surface of the workpiece 2z by an inkjet method or the like. Here, multiple droplet-shaped compositions 3z are shown applied to the substrate 1z.

[0082] As shown in Figure 6(B), the mold 4z is positioned so that the side with the uneven pattern faces the composition 3z on the substrate 1z. As shown in Figure 6(C), the substrate 1z to which the composition 3z is applied and the mold 4z are brought into contact and pressure is applied (contact step). The composition 3z fills the gap between the mold 4z and the workpiece 2z. In this state, when light is irradiated through the mold 4z as curing energy, the composition 3z hardens (curing step). In this embodiment, based on the spectral sensitivity characteristics acquired in the apparatus, it is possible to irradiate the composition with light at an irradiation dose that results in the optimal degree of photopolymerization.

[0083] As shown in Figure 6(D), after curing composition 3z, when the mold 4z and substrate 1z are separated, a pattern of the cured composition 3z is formed on the substrate 1z (pattern formation step, molding step). In this cured pattern, the recesses of mold 4z correspond to the protrusions of the cured material, and the protrusions of mold 4z correspond to the recesses of the cured material. In other words, the uneven pattern of mold 4z is transferred to composition 3z.

[0084] As shown in Figure 6(E), when etching is performed using the cured material pattern as an etching-resistant mask, the parts of the workpiece 2z surface that are free of or have a thin remaining cured material are removed, forming grooves 5z. As shown in Figure 6(F), when the cured material pattern is removed, an article with grooves 5z formed on the surface of the workpiece 2z can be obtained. Here, the cured material pattern was removed, but it may also be used without removal after processing, for example, as an interlayer insulating film included in semiconductor devices, i.e., as a component of the article. In addition, although an example using a circuit pattern transfer mold with a raised and recessed pattern was described as the mold 4z, a flat template with a flat surface without a raised and recessed pattern may also be used.

[0085] Although preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of its essence. Furthermore, the above embodiments may be implemented in combination.

[0086] Furthermore, some or all of the control in each of the above-described embodiments may be performed by supplying a computer program that realizes the functions of each of the above-described embodiments to the imprint device 1, etc., via a network or various storage media. The computer (or CPU, MPU, etc.) in the imprint device 1, etc., may then read and execute the program. In that case, the program and the storage medium storing the program constitute the present invention. [Explanation of Symbols]

[0087] 1 Imprint device 2 circuit boards 4 molds 5 Pattern section 7 Imprint material 8 Imprint Area 9. The first gas 10 First gas supply unit 12. Second gas 13. Second gas supply unit 21 Irradiation light

Claims

1. An imprint apparatus that performs an imprinting process to sequentially form a pattern of an imprinting material in multiple imprinting regions on a substrate coated with an imprinting material, using a mold having a pattern portion, A first gas supply unit that supplies a first gas to promote the filling of the imprint material into the pattern portion, A second gas supply unit that supplies a second gas that inhibits the hardening of the imprint material, It comprises a control unit that controls the first gas supply unit and the second gas supply unit, The control unit, With the pattern portion in contact with the imprint material in the first imprint area on the substrate, the first gas supply unit is controlled to supply the first gas to the space around the gap between the mold and the substrate before the mold is separated from the imprint material in the first imprint area. After the mold is separated from the imprint material in the first imprint area while the space around the mold is filled with the first gas, and before the pattern portion is brought into contact with the imprint material in the second imprint area to be imprinted, the second gas supply unit is controlled to supply the second gas to the space around the gap between the mold and the substrate. An imprinting device characterized by the following features.

2. The imprint apparatus according to claim 1, characterized in that the control unit controls the second gas supply unit to supply the second gas while the pressure in the space between the mold and the substrate is stable.

3. The imprint apparatus according to claim 1, characterized in that the control unit controls the second gas supply unit to supply the second gas between the time the mold is separated from the first imprint area and the time the second imprint area is directly below the pattern area.

4. The imprint apparatus according to claim 1, characterized in that the control unit controls the second gas supply unit to supply the second gas between the time the second imprint area moves directly below the pattern area and the time the mold starts contacting the imprint material of the second imprint area.

5. The imprint apparatus according to claim 1, characterized in that when the control unit performs the imprinting process on the second imprint area, after separating the mold from the first imprint area, it changes the distance between the pattern portion and the substrate until the second imprint area is directly below the pattern portion.

6. The imprint apparatus according to claim 1, characterized in that the control unit controls the supply flow rate of the second gas according to the position of the imprint area on the substrate.

7. The imprint apparatus according to claim 1, characterized in that the control unit controls the supply time of the second gas according to the position of the imprint area on the substrate.

8. The first gas supply unit has a plurality of gas supply ports, The imprint apparatus according to claim 1, characterized in that the control unit controls which of the plurality of gas supply ports of the first gas supply unit supplies the first gas according to the position of the second imprint area on the substrate.

9. The second gas supply unit has a plurality of gas supply ports, The imprint apparatus according to claim 1, characterized in that the control unit controls which of the plurality of gas supply ports of the second gas supply unit supplies the second gas according to the position of the second imprint area on the substrate.

10. The imprint apparatus according to claim 1, characterized in that the number of gas supply ports of the second gas supply unit is greater than the number of gas supply ports of the first gas supply unit.

11. The imprint apparatus according to claim 8, characterized in that the plurality of gas supply ports of the first gas supply unit are arranged on the outer circumference of the mold.

12. The imprint apparatus according to claim 9, characterized in that the plurality of gas supply ports of the second gas supply unit are arranged on the outer circumference of the mold.

13. The imprint apparatus according to claim 1, characterized in that the second imprint area is an area adjacent to the first imprint area.

14. In an imprinting method in which an imprinting process is performed to sequentially form a pattern of an imprinting material on a substrate coated with an imprinting material using a mold having a pattern portion, A first gas supply step of supplying a first gas to promote the filling of the imprint material into the pattern portion, The process includes a second gas supply step for supplying a second gas that inhibits the hardening of the imprint material, In the first gas supply step, while the pattern portion is in contact with the imprint material in the first imprint region on the substrate, before separating the mold from the imprint material in the first imprint region, the first gas is supplied to the space around the gap between the mold and the substrate. An imprinting method characterized in that, in the second gas supply step, after the space around the mold is filled with the first gas and the mold is separated from the imprint material in the first imprint area on the substrate, and before the pattern portion is brought into contact with the imprint material in the second imprint area to be imprinted next, the second gas is supplied to the space around the gap between the mold and the substrate.

15. A pattern formation step of forming the pattern on the substrate using the imprint apparatus described in claim 1, A processing step for processing the substrate on which the pattern has been formed in the pattern forming step, A process for manufacturing an article from the substrate processed in the above processing step, A method for manufacturing an article, characterized by including the following:

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