Cutting device
Patent Information
- Application Number
- JP2022135611
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-08-29
- Publication Date
- 2026-08-18
- Estimated Expiration
- 2042-08-29
AI Technical Summary
【0011】 本発明の切削装置は、電極を備えたデバイスが分割予定ラインによって区画され表面に複数形成された被加工物を保持するチャックテーブルと、該チャックテーブルに保持された被加工物を切削する切削ブレードを回転可能に備えた切削手段と、該チャックテーブルと該切削手段とを相対的にX軸方向に切削送りするX軸送り手段と、該チャックテーブルと該切削手段とを相対的にX軸方向に直交するY軸方向に割り出し送りするY軸送り手段と、を含み構成される切削装置であって、該切削手段に隣接して該切削手段と一体的に移動するように配設され、切削が実施される分割予定ラインの該X軸方向において、該分割予定ラインにおける未加工の領域が存在する一方側から切削ブレードと被加工物との接触点に対して切削液を供給する切削液供給ノズルと、被加工物の幅を超える長さをY軸方向に有し、該切削が実施される該分割予定ラインの該X軸方向において切削が実施された後の領域が存在する他方側から、該切削ブレードと該被加工物との接触点よりも該他方側の該被加工物の表面に向けてデバイスに形成された電極が錆びないように防錆剤を供給する防錆剤供給ノズルと、を備えていることから、例えばQFNの如くパッケージ基板を切削して時間が経過しても、デバイスの電極が酸化して錆びることが防止され、デバイスの品質の低下を招くという問題が解消される。
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Abstract
Description
Technical Field
[0001] The present invention relates to a cutting device that cuts a workpiece formed on a surface and partitioned by a planned division line, the workpiece having a plurality of devices each provided with an electrode.
Background Art
[0002] A wafer on which a plurality of devices such as ICs and LSIs are partitioned by a planned division line and formed on the surface is divided into individual device chips by a cutting device having a rotatable cutting blade, and is used in electric devices such as mobile phones and personal computers.
[0003] The cutting device includes a chuck table for holding the wafer, a cutting means having a rotatable cutting blade for cutting the wafer held on the chuck table, an X-axis feeding means for relatively cutting and feeding the chuck table and the cutting means in the X-axis direction, and a Y-axis feeding means for relatively indexing and feeding the chuck table and the cutting means in the Y-axis direction orthogonal to the X-axis direction. The cutting device is configured to be able to divide the wafer into individual device chips with high precision.
[0004] Further, when the wafer is cut by the above-described cutting blade, cutting chips (contaminants) float and adhere to the surface of the wafer, deteriorating the quality of the device. Therefore, a technique has been proposed in which cleaning water is supplied to the surface of the wafer to wash away the cutting chips and prevent them from adhering to the device chips (see, for example, Patent Document 1).
Prior Art Documents
Patent Documents
[0005]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0006] By the way, when cutting package substrates like QFN (Quad-Flat-Non-leaded package), there is a problem that the electrode pads that make up the device oxidize and rust over time, degrading the quality of the device.
[0007] This type of problem can occur not only when cutting package substrates that form QFNs, but also when cutting semiconductor wafers on which devices with multiple electrodes arranged on the surface have been formed.
[0008] The present invention has been made in view of the above facts, and its main technical problem is to provide a cutting device that can prevent cutting chips from adhering to the device and prevent the electrodes of the device from oxidizing and rusting. [Means for solving the problem]
[0009] To solve the above-mentioned main technical problems, the present invention provides a cutting apparatus comprising: a chuck table that holds a workpiece formed on its surface, partitioned by planned division lines, on which a device equipped with electrodes is divided; a cutting means rotatably equipped with a cutting blade for cutting the workpiece held on the chuck table; an X-axis feed means that feeds the chuck table and the cutting means relative to each other in the X-axis direction; and a Y-axis feed means that feeds the chuck table and the cutting means relative to each other in the Y-axis direction perpendicular to the X-axis direction, wherein adjacent to the cutting means So that it moves integrally with the cutting means It was installed, In the X-axis direction of the division line where cutting is to be performed, from one side where there is an unprocessed area in the division line At the contact point between the cutting blade and the workpiece In contrast A cutting fluid supply nozzle that supplies cutting fluid, and a length in the Y-axis direction that exceeds the width of the workpiece, From the other side of the planned division line where the cutting is to be performed, in the X-axis direction, where the area after cutting exists, toward the surface of the workpiece on the other side of the contact point between the cutting blade and the workpiece. A cutting device is provided that includes a rust inhibitor supply nozzle that supplies a rust inhibitor to prevent the electrodes formed on the device from rusting.
[0010] The cutting fluid supply nozzle preferably supplies pure water or a mixture of an organic acid and an oxidizing agent. [Effects of the Invention]
[0011] The cutting apparatus of the present invention comprises a chuck table that holds a workpiece formed on its surface, partitioned by planned division lines, and equipped with electrodes; a cutting means rotatably provided with a cutting blade for cutting the workpiece held on the chuck table; an X-axis feed means for cutting and feeding the chuck table and the cutting means relative to each other in the X-axis direction; and a Y-axis feed means for indexing and feeding the chuck table and the cutting means relative to each other in the Y-axis direction perpendicular to the X-axis direction, wherein adjacent to the cutting means So that it moves integrally with the cutting means It was installed, In the X-axis direction of the division line where cutting is to be performed, from one side where there is an unprocessed area in the division line At the contact point between the cutting blade and the workpiece In contrast A cutting fluid supply nozzle that supplies cutting fluid, and a length in the Y-axis direction that exceeds the width of the workpiece, From the other side of the planned division line where the cutting is to be performed, in the X-axis direction, where the area after cutting exists, toward the surface of the workpiece on the other side of the contact point between the cutting blade and the workpiece. The device is equipped with a rust inhibitor supply nozzle that supplies a rust inhibitor to prevent the electrodes formed on the device from rusting. Therefore, even if time passes after cutting the package substrate, such as with QFN, the device electrodes are prevented from oxidizing and rusting, thus eliminating the problem of device quality degradation. [Brief explanation of the drawing]
[0012] [Figure 1] This is an overall perspective view of the cutting apparatus of this embodiment. [Figure 2] This is a magnified perspective view of the cutting means arranged in the cutting device shown in Figure 1. [Figure 3] Figure 2 is a plan view showing the rust inhibitor supply nozzle and wafer. [Figure 4] This is a perspective view showing an embodiment of a cutting process. [Figure 5] This is a front view of the embodiment shown in Figure 4. [Modes for carrying out the invention]
[0013] Hereinafter, embodiments of the cutting apparatus configured according to the present invention will be described in detail with reference to the attached drawings.
[0014] Figure 1 shows an overall perspective view of the cutting apparatus 1 of this embodiment. The workpiece processed by the illustrated cutting apparatus 1 is a silicon (Si) wafer W on which a device D, having multiple electrodes (not shown) arranged on its surface, is formed. The wafer W is held in an annular frame F via adhesive tape T.
[0015] The cutting apparatus 1 includes a cassette 4 (shown by a dashed line) for accommodating multiple wafers W, a temporary storage table 5 for unloading and temporarily placing the wafers W stored in the cassette 4, an unloading / input means 6 for unloading wafers W from the cassette 4 to the temporary storage table 5 and unloading wafers W from the temporary storage table 5 to the cassette 4, a transport means 7 for suctioning and rotating the wafers W unloaded onto the temporary storage table 5 and placing them on the holding surface 8b of the chuck table 8a of the holding means 8, a cutting means 9 for cutting the wafers W held by suction on the holding surface 8b of the chuck table 8a, a cleaning means 10 (details omitted) for cleaning the wafers W cut by the cutting means 9, a cleaning and transport means 11 for transporting the cut wafers W from the chuck table 8a to the cleaning means 10, an imaging means 12 for imaging the wafers W on the chuck table 8a, and a control means (not shown). The cassette 4 is placed on a cassette table 4a which is movable vertically by a lifting mechanism (not shown), and the height of the cassette 4 is adjusted as appropriate when the wafer W is unloaded from the cassette 4 by the loading / unloading mechanism 6. Inside the device housing 2, there is an X-axis feed mechanism for machining the chuck table 8a of the holding mechanism 8 in the X-axis direction, and a Y-axis feed mechanism (neither of which are shown) for indexing and feeding the cutting mechanism 9 in the Y-axis direction which is perpendicular to the X-axis direction.
[0016] While referring to FIG. 2, the cutting means 9 disposed in the cutting apparatus 1 shown in FIG. 1 will be described more specifically. FIG. 2 is an enlarged perspective view showing the main part of the cutting means 9 of the cutting apparatus 1 shown in FIG. 1 and the holding means 8 that has moved directly below the cutting means 9. As understood from FIG. 2, the cutting means 9 includes a rotary shaft housing 91 extending in the Y-axis direction, a rotary shaft 92 rotatably supported by the rotary shaft housing 91, an annular cutting blade 93 detachably supported on the tip side of the rotary shaft 92, a cover body 94 attached to the tip of the rotary shaft housing 91 to cover the cutting blade 93, a cutting fluid supply nozzle 95 (shown by a dashed line) for supplying the cutting fluid L2 to the contact point between the cutting blade 93 and the wafer W, that is, the cutting position, and a rust preventive agent supply nozzle 96 for supplying a rust preventive agent L1 (to be described in detail later) that acts so that the electrodes of the device D do not rust. The rotary shaft 92 is rotationally driven by an electric motor (not shown) disposed on the rear end side of the rotary shaft 92. Further, the cutting means 9 of the present embodiment includes, in addition to the Y-axis feed means described above, a plunge feed means (not shown) for moving the cutting means 9 in the Z-axis direction for plunge feed.
[0017] As shown in FIG. 2, the cover body 94 includes a first cover member 94a fixed to the tip of the rotary shaft housing 91, a second cover member 94b fixed to the front surface of the first cover member 94a with screws, and a cutting blade detection block 94c fixed to the upper surface of the first cover member 94a with screws. A blade sensor (not shown) for detecting wear and chipping on the outer peripheral end side of the cutting blade 93 is disposed on the cutting blade detection block 94c.
[0018] The rust preventive agent supply nozzle 96 is disposed adjacent to the cutting means 9. In this embodiment, it includes a hollow cylindrical main body portion 96a disposed along the Y-axis direction, a plurality of injection holes 96b disposed on the lower side of the main body portion 96a toward the cutting blade 93 side and injecting a rust preventive agent L1 toward the wafer W held by the chuck table 8a, and a rust preventive agent inlet 96c formed at the inner end of the main body portion 96a. A rust preventive agent supply means 13 for supplying the rust preventive agent L1 is connected to the rust preventive agent inlet 96c. The rust preventive agent supply nozzle 96 is fixed to the cover body 94 or the rotary shaft housing 91 by a fixing member (not shown) and is moved integrally with the cutting means 9.
[0019] The rust preventive agent supply means 13 includes a rust preventive agent storage tank 13a for storing the rust preventive agent L1, a rust preventive agent path 13b connecting the rust preventive agent storage tank 13a and the rust preventive agent inlet 96c, and an on-off valve 13c for opening and closing the rust preventive agent path 13b.The rust preventive agent storage tank 13a includes a pump (not shown). By operating the pump and opening the on-off valve 13c, the rust preventive agent L1 can be injected from the injection holes 96b of the rust preventive agent supply nozzle 96.
[0020] The cutting fluid supply nozzle 95 shown by a broken line in FIG. 2 is disposed in the cutting means 9. In this embodiment, it is formed in the first cover member 94a and supplies the cutting fluid L2 introduced from the cutting fluid inlet 95a toward the contact point between the cutting blade 93 and the wafer W being cut. A cutting fluid supply means 14 is connected to the cutting fluid inlet 95a. The cutting fluid supply means 14 includes a cutting fluid storage tank 14a for storing the cutting fluid L2, a cutting fluid path 14b connecting the cutting fluid storage tank 14a and the cutting fluid inlet 95a, and an on-off valve 14c for opening and closing the cutting fluid path 14b. The cutting fluid storage tank 14a includes a pump (not shown). By operating the pump and opening the on-off valve 14c, the cutting fluid L2 can be injected from the injection port 95b of the cutting fluid supply nozzle 95.
[0021] The rust inhibitor L1 of this embodiment will be described below. The rust inhibitor L1 used in the present invention is a liquid that prevents the electrodes of the device D, which are cut and divided from a workpiece (in this embodiment, a silicon wafer W), from oxidizing and rusting. For example, a rust inhibitor with the following components may be used.
[0022] Examples of 1,2,3-triazole derivatives that can be used as the rust inhibitor L1 described above include those that do not have substituents on the nitrogen atom forming the 1,2,3-triazole ring, and in which alkyl or aryl groups are introduced at the 4th and / or 5th positions of 1,2,3-triazole, substituted with substituents selected from the group consisting of hydroxyl groups, carboxyl groups, sulfo groups, amino groups, carbamoyl groups, carbonamide groups, sulfamoyl groups, and sulfonamide groups, or with at least one substituent selected from the group consisting of hydroxyl groups, carboxyl groups, sulfo groups, amino groups, carbamoyl groups, carbonamide groups, sulfamoyl groups, and sulfonamide groups.
[0023] Furthermore, examples of 1,2,4-triazole derivatives that can be used as rust inhibitor L1 include those that do not have substituents on the nitrogen atom forming the 1,2,4-triazole ring, and have substituents selected from the group consisting of a sulfo group, a carbamoyl group, a carbamide group, a sulfamoyl group, and a sulfonamide group, or alkyl or aryl groups substituted with at least one substituent selected from the group consisting of a hydroxyl group, a carboxyl group, a sulfo group, an amino group, a carbamoyl group, a carbamide group, a sulfamoyl group, and a sulfonamide group, introduced at the 2nd and / or 5th positions of the 1,2,4-triazole.
[0024] The rust inhibitor supply nozzle 96 described above supplies a rust inhibitor L1 to prevent oxidation of the electrodes of the device D on the wafer W held on the chuck table 8a during cutting. The rust inhibitor supply nozzle 96 and the wafer W held on the chuck table 8a are configured to satisfy the following conditions, as explained with reference to Figure 3. Figure 3 is a plan view showing the wafer W held on the chuck table 8a of the holding means 8 and the rust inhibitor supply nozzle 96 arranged on the cutting means 9. For the sake of explanation, components of the cutting means 9 other than the rust inhibitor supply nozzle 96 (cover body 94, rotary shaft housing 91, etc.) are omitted. The wafer W is a wafer on which multiple devices D are formed on the surface Wa, partitioned by division lines We, and is held on an annular frame F having an opening Fa capable of accommodating the wafer W via adhesive tape T.
[0025] As can be seen from the plan view in Figure 3, the rust inhibitor supply nozzle 96 is arranged along the Y-axis direction and has a length in the Y-axis direction that exceeds the Y-axis width P1 of the wafer W, which is the workpiece. Furthermore, as shown in Figure 3, the length P2 defined by the injection holes 96b at one end and the injection holes 96b at the other end of the multiple injection holes 96b formed in the main body portion 96a of the rust inhibitor supply nozzle 96 is set to be longer than the width P1 of the wafer W. In addition, the number and spacing of the multiple injection holes 96b are set so that the rust inhibitor L1 is supplied from the injection holes 96b to the entire width of the wafer W held by the chuck table 8a. In the above embodiment, the rust inhibitor L1 is supplied by forming multiple injection holes 96b in the rust inhibitor supply nozzle 96, but the present invention is not limited to this, and the rust inhibitor L1 may also be supplied from a slit formed along the longitudinal direction of the rust inhibitor supply nozzle 96. In that case, the length of the slit is set to a dimension that exceeds the length of the wafer W width P1. The rust inhibitor supply means 13, the cutting fluid supply means 14, and each operating part described above are controlled by the control means described above.
[0026] The cutting fluid L2 of this embodiment will be described below. The cutting fluid L2 used in the present invention is a liquid supplied from the cutting fluid supply nozzle 95 to the contact point between the cutting blade 93 and the wafer W. For example, pure water or a mixture of an organic acid and an oxidizing agent with components as described below may be used.
[0027] The amino acids that can be used as organic acids constituting the mixed solution supplied from the cutting fluid supply nozzle 95 include glycine, dihydroxyethylglycine, glycylglycine, hydroxyethylglycine, N-methylglycine, β-alanine, L-alanine, L-2-aminobutyric acid, L-norvaline, L-valine, L-leucine, L-norleucine, L-alloisoleucine, L-isoleucine, L-phenylalanine, L-proline, sarcosine, L-ornithine, L-lysine, taurine, L-serine, L-threolin, L-alothreonine, L-homoserine, L-thyroxine, L-tyrosine, 3,5-jodo-L-tyrosine, and β-(3,4-dihydroxyphenyl)-L-alanine. Examples include 4-hydroxy-L-proline, L-cysteine, L-methionine, L-ethionine, L-lanthionine, L-cystathionine, L-cystine, L-cystic acid, L-glutamic acid, L-aspartic acid, S-(carboxymethyl)-L-cysteine, 4-aminobutyric acid, L-asparagine, L-glutamine, azacerin, L-canavanine, L-citrulline, L-arginine, δ-hydroxy-L-lysine, creatine, L-kynurenine, L-histidine, 1-methyl-L-histidine, 3-methyl-L-histidine, L-tryptophan, actinomycin C1, ergothioneine, apamin, angiotensin I, angiotensin II, and antipyne. Among these, glycine, L-alanine, L-proline, L-histidine, L-lysine, and dihydroxyethylglycine are preferred.
[0028] Furthermore, examples of aminopolyacids that can be used as organic acids constituting the above-mentioned mixture include iminodiacetic acid, nitrilotriacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, hydroxyethyliminodiacetic acid, nitrilotrismethylenephosphonic acid, ethylenediamine-N,N,N',N'-tetramethylenesulfonic acid, 1,2-diaminopropanetetraacetic acid, glycol etherdiaminetetraacetic acid, transcyclohexanediaminetetraacetic acid, ethylenediamine orthohydroxyphenylacetic acid, ethylenediaminedisucnic acid (SS isomer), β-alaninediacetic acid, N-(2-carboxylate ethyl)-L-aspartic acid, and N,N'-bis(2-hydroxybenzyl)ethylenediamine-N,N'-diacetic acid.
[0029] Furthermore, examples of carboxylic acids that can be used as organic acids constituting the mixture include saturated carboxylic acids such as formic acid, glycolic acid, propionic acid, acetic acid, butyric acid, hexanoic acid, oxalic acid, malonic acid, glutaric acid, adipic acid, malic acid, succinic acid, pimelic acid, mercaptoacetic acid, glyoxylic acid, chloroacetic acid, pyruvic acid, acetoacetic acid, and glutaric acid; unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, fumaric acid, maleic acid, mesaconic acid, citraconic acid, and aconitic acid; and cyclic unsaturated carboxylic acids such as benzoic acid, toluic acid, phthalic acid, naphthoic acid, pyrometic acid, and naphthalic acid.
[0030] As the oxidizing agent constituting the mixed liquid supplied from the cutting fluid supply nozzle 95, for example, hydrogen peroxide, peroxides, nitrates, iodates, periodates, hypochlorites, chlorites, chlorates, perchlorates, persulfates, dichromates, permanganates, cerates, vanadates, ozonated water, and silver(II) salts, iron(III) salts, or their organic complex salts can be used.
[0031] As described above, by using a mixture of organic acid and oxidizing agent as the cutting fluid, cutting chips scattered on the surface Wa of the wafer W held in the chuck table 8a during cutting are prevented from adhering to it, and burrs and other debris formed on the devices D, which are individually separated by cutting, are effectively removed, thus preventing a decrease in the quality of the devices D. Furthermore, the above-mentioned rust inhibitor L1 can also be mixed into the cutting fluid L2.
[0032] The cutting apparatus 1 of this embodiment has a configuration that is generally as described above, and the manner in which the cutting apparatus 1 cuts a wafer W, which is a workpiece, will be described below. The workpiece of the present invention is a plate-shaped silicon wafer W as described above, in which a plurality of devices D are formed on a surface Wa that is partitioned by division lines We.
[0033] When performing cutting using the cutting means 9 of the cutting apparatus 1 as described with reference to Figure 1, first, the wafer W contained in the cassette 4 is unloaded onto the temporary storage table 5 by the loading / unloading means 6, and then transported by the transport means 7 onto the chuck table 8a positioned at the loading / unloading position in Figure 1. Once the wafer W is placed on the chuck table 8a and held in place by suction, the wafer W is positioned directly below the imaging means 12 by an X-axis feeding means (not shown) and imaged to detect a predetermined division line We of the wafer W, which is the area to be cut, and align it in the X-axis direction. Next, the division line We where cutting will begin is aligned with the cutting blade 93 of the cutting means 9, and the cutting means 9 is positioned at a predetermined processing start position.
[0034] Next, as shown in Figure 4, the cutting blade 93 of the cutting means 9 is rotated at high speed in the direction indicated by R1 and positioned on the planned division line We aligned in the X-axis direction. The rust inhibitor supply means 13 and cutting fluid supply means 14 are activated to spray the rust inhibitor L1 and cutting fluid L2 from the rust inhibitor supply nozzle 96 and cutting fluid supply nozzle 95. The cutting feed means is then activated to make the cutting blade 93 cut into the wafer W from the surface Wa side in the Z-axis direction, and the X-axis feed means is activated to feed the wafer W in the X-axis direction indicated by the arrow X in the figure to form the cutting groove 100. In this embodiment, the cutting fluid L2 is described as a mixed liquid of the organic acid and oxidizing agent described above, supplied from the cutting fluid supply nozzle 95, but the cutting fluid L2 may be pure water.
[0035] Figure 5 shows a front view of an embodiment of the cutting process that forms the cutting groove 100 described above. In Figure 5, for the sake of explanation, the second cover member 94b and the blade detection block 94c of the cover body 94 are omitted, and a portion of the first cover member 94a on which the cutting fluid supply nozzle 95 is formed is shown in cross-section.
[0036] Once the cutting groove 100 described above is formed, the cutting blade 93 of the cutting means 9 is indexed and fed onto an unprocessed dividing line We adjacent in the Y-axis direction to the dividing line We in which the cutting groove 100 was formed, and the cutting groove 100 is formed in the same manner as above. By repeating these steps, cutting grooves 100 are formed along all dividing lines We along the X-axis direction. Next, the wafer W is rotated 90 degrees so that the direction perpendicular to the direction in which the cutting groove 100 was previously formed is aligned with the X-axis direction, and while supplying the rust inhibitor L1 and cutting fluid L2 described above, cutting is performed on all the newly aligned dividing lines We along the X-axis direction, forming cutting grooves 100 along all the dividing lines We formed on the wafer W. As a result, the device D on the wafer W is divided into individual device chips.
[0037] As can be seen from Figures 4 and 5, since rust inhibitor L1 is supplied from the rust inhibitor supply nozzle 96 onto the surface Wa of the wafer W, oxidation and rusting of the electrodes constituting the device D are prevented, thus resolving the problem of deterioration in the quality of the device D. Furthermore, cutting fluid L2 is supplied from the cutting fluid supply nozzle 95 towards the contact point between the cutting blade 93 and the wafer W. As described above, if the cutting fluid L2 is a mixture of organic acid and oxidizing agent, it functions to prevent cutting debris scattered on the surface Wa of the wafer W from adhering to the wafer W, and also effectively removes burrs and other debris formed on the device D during cutting.
[0038] It should be noted that the workpiece cut by the present invention is not limited to the wafer W of the above-described embodiment. For example, it may be a substrate on which a plurality of devices called QFNs are arranged. When the substrate is cut along the planned division line by the cutting device 1 described above and divided into individual devices, electrodes are exposed on the outer periphery of the devices. Even when dividing such a substrate into individual devices, oxidation and rusting of the electrodes of the devices divided by the cutting process are prevented, thus eliminating the problem of deterioration in the quality of the devices. [Explanation of symbols]
[0039] 1:Cutting device 2: Device housing 4: Cassette 5: Temporary placement table 6: Carrying in / out means 7: Conveying means 8: Holding means 8a: Chuck table 8b: Holding surface 9:Cutting means 91: Rotating shaft housing 92: Rotation axis 93: Cutting blade 94: Cover body 94a: First cover member 94b: Second cover member 94c: Blade detection block 95: Cutting fluid supply nozzle 95a: Cutting fluid inlet 95b: Nozzle 96: Rust Inhibitor Supply Nozzle 96a: Main body 96b: Injection hole 96c: Rust inhibitor inlet 10: Cleaning methods 11: Washing and conveying means 12: Imaging means 13: Rust Inhibitor Supply Method 13a: Rust inhibitor storage tank 13b: Rust inhibitor route 13c: Shut-off valve 14: Cutting fluid supply means 14a: Cutting fluid storage tank 14b: Cutting fluid pathway 14c: Shut-off valve 100: Cutting groove L1: Rust inhibitor L2: Cutting fluid D: Device W: Waha Wa: Surface We: Planned division line
Claims
1. A cutting apparatus comprising: a chuck table having electrodes that is partitioned by lines to be divided and holding multiple workpieces formed on its surface; a cutting means rotatably equipped with a cutting blade for cutting the workpieces held on the chuck table; an X-axis feed means for cutting and feeding the chuck table and the cutting means relative to each other in the X-axis direction; and a Y-axis feed means for indexing and feeding the chuck table and the cutting means relative to each other in the Y-axis direction which is perpendicular to the X-axis direction, It is arranged adjacent to the cutting means and to move integrally with the cutting means, A cutting fluid supply nozzle supplies cutting fluid to the contact point between the cutting blade and the workpiece from one side of the planned division line where an unprocessed area exists, in the X-axis direction of the planned division line where cutting is to be performed. A cutting apparatus comprising: a rust inhibitor supply nozzle having a length in the Y-axis direction exceeding the width of the workpiece, which supplies a rust inhibitor from the other side of the planned division line where cutting is performed, where there is a region after cutting has been performed in the X-axis direction, so as to prevent the electrodes formed on the device from rusting toward the surface of the workpiece on the other side of the contact point between the cutting blade and the workpiece.
2. The cutting apparatus according to claim 1, wherein the cutting fluid supply nozzle supplies pure water or a mixture of an organic acid and an oxidizing agent.
Citation Information
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