Workpiece holding member and laminate

Abstract

To provide a work holding member capable of sufficiently fixing a work before heat treatment at the time of surface mounting of an electronic component and easily removing the work after the heat treatment at the time of surface mounting of the electronic component, in addition to suppressing occurrence of warpage in the work by the heat treatment at the time of surface mounting of the electronic component.SOLUTION: A work holding member includes a support and a work holding layer that is laminated on the support to hold the work. A ratio of a value of three-point bending stress of the support relative to a value of a linear expansion coefficient is 0.3 or more. The work holding layer is composed of a resin composition. A value S of shearing adhesive force relative to a polyimide film before heating at a temperature of 150°C or higher is 1 N / 100 mm2 or more. In addition, a value P of 90° peeling force relative to the polyimide film after heating at temperature of 150°C or higher for 5 minutes is 7 N / 20 mm or less.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a workpiece holding member and a laminate. More specifically, the present invention relates to a workpiece holding member and a laminate in which a workpiece is held on the workpiece holding member. [Background technology]

[0002] Conventionally, in the manufacturing of electronic component devices, it is known to mount electronic components on the surface of a workpiece such as a substrate, that is, to surface mount electronic components onto a workpiece (for example, Patent Documents 1 and 2 below).

[0003] Patent Document 1 below discloses that in the manufacturing of a semiconductor device which is an electronic component, when mounting a semiconductor chip which is an electronic component to the surface of a substrate (workpiece), or when performing a reflow process on a semiconductor chip after it has been mounted to the substrate, the substrate is placed on a stage. More specifically, Patent Document 1 discloses a semiconductor chip stack obtained by stacking a plurality of semiconductor chips equipped with bump electrodes in the height direction, mounting the semiconductor chip stack on a support substrate (workpiece), placing the support substrate with the semiconductor chip stack on a transport plate which is a first stage, then placing the transport plate which is a first stage on a stage in a heating furnace which is a second stage, performing a reflow process, and mounting semiconductor chips on the support substrate to manufacture a semiconductor device. In the reflow process, the support substrate on which the semiconductor chip stack is attached is typically treated at a high temperature of 180°C or higher for a predetermined time.

[0004] Patent Document 2 below discloses that in the manufacturing of an organic EL device, which is an electronic component device, a transparent electrode film such as an IZO film or an ITO film is attached to a transparent substrate (workpiece), and when the transparent electrode film is annealed and mounted, the transparent substrate is placed on a stage. More specifically, Patent Document 2 discloses a method for manufacturing an organic EL device by placing the transparent substrate on a substrate stage, attaching a transparent electrode film, which is an electronic component, to the transparent substrate by sputtering, and then performing an annealing process to mount the transparent electrode film onto the transparent substrate. The annealing process is typically carried out at a temperature of approximately 150°C in order to allow the transparent electrode film to fully exhibit its function.

[0005] As described above, when mounting electronic components onto a circuit board (workpiece), the circuit board is usually placed on a stage with some kind of material in between. For example, the substrate is placed on a stage with a workpiece holding member interposed between it and a support, the workpiece holding member comprising a support and a workpiece holding layer laminated on the support. More specifically, the substrate is placed on the stage by placing the support on the stage while the substrate (workpiece) is held in the workpiece holding layer of the workpiece holding member. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2020-150202 [Patent Document 2] Japanese Patent Publication No. 2008-140735 [Overview of the project] [Problems that the invention aims to solve]

[0007] Incidentally, in recent years, there has been an increasing demand for thinner semiconductor devices and organic EL devices, and in response to this demand, the substrates on which semiconductor chips are mounted and the substrates on which transparent electrode films are mounted are also being made thinner. Furthermore, when the substrate is made thinner in this way, thermal deformation can occur in the substrate due to the reflow temperature during semiconductor chip mounting and the annealing temperature during the mounting of the transparent electrode film, which can cause the substrate to warp. That is, due to the heat treatment during the surface mounting of electronic components, the substrate may be warped. If the substrate is warped as described above, it is not preferable because the mounting state of electronic components such as semiconductor chips and transparent electrode films on the substrate may become poor.

[0008] However, it is difficult to say that sufficient studies have been made on suppressing the warping of the substrate due to the heat treatment during the surface mounting of electronic components.

[0009] Also, before the heat treatment during the surface mounting of electronic components such as before the reflow process or the annealing process, the substrate is fixed to the work holding member (more specifically, the work holding layer of the work holding member), but after the heat treatment during the surface mounting of electronic components such as after the reflow process or the annealing process, the substrate is removed from the work holding member. Therefore, from the viewpoint of efficiently manufacturing an electronic component device, it is preferable that the substrate is sufficiently fixed to the work holding member before the heat treatment during the surface mounting of electronic components, and it is preferable that the substrate is easily removable from the work holding member after the heat treatment during the surface mounting of electronic components.

[0010] However, it is difficult to say that sufficient studies have been made on sufficiently fixing the substrate to the work holding member before the heat treatment during the surface mounting of electronic components and making the substrate easily removable from the work holding member after the heat treatment during the surface mounting of electronic components.

[0011] Therefore, an object of the present invention is to provide a work holding member that can suppress warping of a work due to heat treatment during surface mounting of electronic components, can sufficiently fix the work before the heat treatment during surface mounting of electronic components, and can easily remove the work after the heat treatment during surface mounting of electronic components. Another object of the present invention is to provide a laminate in which a work is held by the work holding member.

Means for Solving the Problems

[0012] Through diligent research, the inventors have found a workpiece holding member comprising a support and a workpiece holding layer laminated on the support to hold a workpiece, wherein the support has a ratio of three-point bending stress to the coefficient of linear expansion of 0.3 or more, the workpiece holding layer is made of a resin composition, and the shear adhesion value S to the polyimide film before heating at a temperature of 150°C or higher is 1 N / 100 mm 2 Furthermore, by setting the 90° peel force P for the polyimide film to 7N / 20mm or less after heating at a temperature of 150°C or higher for 5 minutes, it was found that warping of the workpiece due to heat treatment during surface mounting of electronic components can be suppressed. Furthermore, we found that by using the above-described support and workpiece holding layer, the workpiece can be sufficiently fixed before the heat treatment during surface mounting of electronic components, and the workpiece can be easily removed after the heat treatment during surface mounting of electronic components. And that led me to conceive of the present invention.

[0013] In other words, the workpiece holding member according to the present invention is It comprises a support and a workpiece holding layer laminated on the support for holding a workpiece, The support has a ratio of the value of the three-point bending stress to the value of the coefficient of linear expansion of 0.3 or more. The workpiece holding layer is composed of a resin composition, and before heating at a temperature of 150°C or higher, the shear adhesion value S to the polyimide film is 1 N / 100 mm. 2 Furthermore, after heating at a temperature of 150°C or higher for 5 minutes, the value P of the 90° peel force to the polyimide film is 7N / 20mm or less. [Effects of the Invention]

[0014] According to the present invention, in addition to suppressing warping of the workpiece during surface mounting of electronic components, it is possible to provide a workpiece holding member that can more securely fix the workpiece before heat treatment during surface mounting of electronic components, and that makes it easier to remove the workpiece after heat treatment during surface mounting of electronic components. Furthermore, it is possible to provide a laminate in which a workpiece is held by the workpiece holding member. [Brief explanation of the drawing]

[0015] [Figure 1] A cross-sectional view showing the configuration of a workpiece holding member related to one embodiment of the present invention. [Figure 2] A cross-sectional view showing the structure of a laminate according to one embodiment of the present invention. [Figure 3A] A cross-sectional view showing how a workpiece is held on the workpiece holding layer of the workpiece holding member. [Figure 3B] A cross-sectional view showing a workpiece held on the workpiece holding layer of the workpiece holding member. [Figure 3C] A cross-sectional view showing how semiconductor chips are mounted onto a workpiece. [Figure 3D] A cross-sectional view showing the process of resin encapsulation of a semiconductor chip mounted on a workpiece. [Figure 3E] A cross-sectional view showing the process of removing a workpiece, to which a resin-encapsulated semiconductor chip has been attached, from a workpiece holding member. [Modes for carrying out the invention]

[0016] [Workpiece holding member] The workpiece holding member according to one embodiment of the present invention will be described below with reference to Figure 1. In the following, the workpiece holding member according to one embodiment of the present invention may simply be referred to as the workpiece holding member according to this embodiment.

[0017] The workpiece holding member 10 according to this embodiment comprises a support 1 and a workpiece holding layer 2 laminated on the support 1 to hold the workpiece. In the workpiece holding member 10 according to this embodiment, the support 1 has a ratio of the value of the three-point bending stress to the value of the coefficient of linear expansion of 0.3 or more. Here, the lower the value of the three-point bending stress, the easier the support 1 becomes to bend, and therefore the workpiece held in the workpiece holding layer 2 is more prone to warping. Furthermore, the higher the coefficient of thermal expansion, the more easily the support 1 expands, and therefore the workpiece held in the workpiece holding layer 2 becomes more prone to warping as the support 1 expands. Therefore, in order to suppress warping that occurs in the workpiece held in the workpiece holding layer 2 of the workpiece holding member 10, it is preferable that the coefficient of linear expansion of the support 1 be as low as possible, and the value of the three-point bending stress be as high as possible. In the workpiece holding member 10 according to this embodiment, as described above, the ratio of the value of the three-point bending stress to the value of the coefficient of linear expansion is 0.3 or more for the support body 1. That is, the ratio is such that the value of the coefficient of linear expansion is low and the value of the three-point bending stress is high, so that the support body 1 is less likely to warp. Therefore, even during the heat treatment process when surface mounting electronic components, it is possible to suppress warping of the workpiece held in the workpiece holding layer 2.

[0018] In the workpiece holding member 10 according to this embodiment, the workpiece holding layer 2 is made of a resin composition, and the shear adhesion value S to the polyimide film is 1 N / 100 mm before heating at a temperature of 150°C or higher. 2 Furthermore, after heating at a temperature of 150°C or higher for 5 minutes, the value P of the 90° peel force to the polyimide film is 7N / 20mm or less. In this context, heating during surface mounting of electronic components includes heating during reflow soldering and heating during annealing, and the heating temperatures during these processes are typically 150°C or higher. Considering the heat treatment temperatures described above, it is preferable that the workpiece is sufficiently fixed to the workpiece holding layer 2 at temperatures below 150°C, and that the workpiece is easily removable from the workpiece holding layer 2 after being heated to a temperature of 150°C or higher. In the workpiece holding member 10 according to this embodiment, the shear adhesion force S to the polyimide film is 1 N / 100 mm before heating at a temperature of 150°C or higher. 2 Therefore, before the heat treatment during surface mounting of electronic components, the workpiece holding layer 2 can sufficiently hold the workpiece. Furthermore, in the workpiece holding member 10 according to this embodiment, the value P of the 90° peel force to the polyimide film is 7N / 20mm or less after heating at a temperature of 150°C or higher for 5 minutes, so the workpiece can be easily removed from the workpiece holding layer 2 after the heat treatment during surface mounting of electronic components. Furthermore, by possessing these physical properties, the workpiece holding layer 2 of the workpiece holding member 10 according to this embodiment can be used repeatedly.

[0019] The value S of the shear adhesion force to the polyimide film before heating at a temperature of 150°C or higher, and the value P of the 90° peel force to the polyimide film after heating at a temperature of 150°C or higher for 5 minutes, can be adjusted by the arithmetic mean roughness Ra of the surface of the workpiece holding layer 2 that comes into contact with the polyimide film (hereinafter referred to as the contact surface of the workpiece holding layer 2). Specifically, by increasing the arithmetic mean roughness Ra of the contact surface of the workpiece holding layer 2, the shear adhesion force S and the 90° peel force P can be reduced, and by decreasing the arithmetic mean roughness Ra of the contact surface of the workpiece holding layer 2, the shear adhesion force S and the 90° peel force P can be increased. The arithmetic mean roughness Ra of the contact surface of the workpiece holding layer 2 can be adjusted by various known methods. For example, if the workpiece holding layer 2 is manufactured by applying a resin composition to one resin film to form a resin layer, and then covering the exposed surface of the resin layer with another resin film, the arithmetic mean roughness Ra can be adjusted by using a matte-treated other resin film.

[0020] The workpiece holding member 10 according to this embodiment is used, for example, to mount electronic components on the surface of a workpiece. More specifically, the workpiece holding member 10 according to this embodiment is used in the manufacture of semiconductor devices to mount semiconductor chips on the surface of a circuit board, and in the manufacture of organic EL devices to mount transparent electrode films such as IZO films and ITO films on a transparent substrate.

[0021] The support 1 supports the workpiece holding layer 2 which is laminated on the support 1. Examples of support material 1 include metal plates and glass plates. Examples of metal plates include stainless steel plates and aluminum plates, while examples of glass plates include flat glass and microscope slides.

[0022] The thickness of the support 1 is preferably 0.3 mm or more, more preferably 0.5 mm or more, and even more preferably 1.0 mm or more. Furthermore, the thickness of the support 1 is preferably 5.0 mm or less, more preferably 4.0 mm or less, more preferably 3.0 mm or less, more preferably 2.0 mm or less, and more preferably 1.5 mm or less. The thickness of support 1 can be measured using a thickness gauge. An example of a thickness gauge is the JA-257 thickness gauge manufactured by Ozaki Seisakusho Co., Ltd. (terminal size: upper and lower φ20mm).

[0023] The three-point bending stress of support 1 is preferably 5N / 10mm or more, more preferably 6N / 10mm or more, even more preferably 7N / 10mm or more, and particularly preferably 8N / 10mm or more. The upper limit of the three-point bending stress of support 1 is typically 200 N / 10 mm. The three-point bending stress of support 1 can be measured using a tensile-compression testing machine (model "TG-5KN", manufactured by Minnevia) according to the following procedure. Prepare a support with a width of 10 mm and a length of 100 mm as a test piece. (2) For the test piece, grip at a position 35 mm away from the center toward one end side in the length direction and at a position 35 mm away from the center toward the other end side in the length direction with the gripping members of the tensile compression testing machine, respectively. (3) Push the center of the test piece downward from above at a pushing speed of 5 mm / min with the pushing member of the tensile compression testing machine, and take the maximum load when pushed as the three-point bending stress.

[0024] The linear expansion coefficient of the support 1 is preferably 30×10 -6 / °C or less, more preferably 25×10 -6 / °C or less, even more preferably 10×10 -6 / °C or less, particularly preferably 8×10 -6 / °C or less. The lower limit value of the linear expansion coefficient of the support 1 is usually 5×10 -6 / °C. The linear expansion coefficient of the support 1 can be measured by thermomechanical analysis (TMA method). Thermomechanical analysis (TMA method) can be carried out under the following conditions. · Apparatus name: Thermomechanical analyzer (trade name "TMA / SS7100, manufactured by SII NanoTechnology Inc.") · Measurement mode: Tensile method · Temperature range: -50°C to 300°C · Heating rate: 10°C / min · Sample shape: Prismatic with a side length of 5 mm and a height of 10 mm · Standard sample: Alumina Note that for the support 1, the ratio of the value of the three-point bending stress to the value of the linear expansion coefficient can be obtained by dividing the value of the three-point bending stress obtained as described above by the value of the linear expansion coefficient.

[0025] The support 1 preferably has an arithmetic mean roughness Ra of 2 μm or less on the surface on which the workpiece holding layer 2 is held, more preferably 1 μm or less, and even more preferably 0.4 μm or less. Furthermore, the support 1 preferably has an arithmetic mean roughness Ra of 0.01 μm or more on the surface on which the workpiece holding layer 2 is held, and more preferably 0.015 μm or more. In the support 1, if the arithmetic mean roughness Ra of the surface on which the workpiece holding layer 2 is held is within the above numerical range, the workpiece holding layer 2 can be more securely fixed to the support 1. The arithmetic mean roughness Ra of the surface on which the workpiece holding layer 2 is held in the support 1 can be measured in accordance with JIS B 0601 (1994). The following measurement conditions can be used: • Measurement device: Confocal laser microscope (Model: LEXT OLS5000, manufactured by Olympus Corporation) • Settings: High precision setting • Objective lens: 10x • Evaluation length: 1279 μm • Filter: Gaussian filter • Cutoff: λc = 80,000 μm, λs = none, λf = none

[0026] The workpiece holding layer 2 holds the workpiece on the side opposite to the side supported by the support 1. The workpiece holding layer 2 has adhesive properties. In the workpiece holding layer 2, adhesion is achieved by the resin contained in the resin composition. As a result, the workpiece holding layer 2 can hold the workpiece by adhesive force. Furthermore, the workpiece holding layer 2 can be supported by the support 1 while being held in place by adhesive force. The workpiece is preferably one selected from the group consisting of a ceramic substrate, a silicon substrate, a glass substrate, and a resin film substrate. Examples of the aforementioned resin film substrate include polyimide film and polyethylene naphthalate film. If the workpiece is a substrate used in the manufacture of a semiconductor device, the substrate may be a circuit board with circuits formed on at least one side. Furthermore, the circuit may include a sensor element.

[0027] The thickness of the workpiece holding layer 2 is preferably 10 μm or more and 3500 μm or less. The thickness of the workpiece holding layer 2 is more preferably 20 μm or more, even more preferably 30 μm or more, even more preferably 40 μm or more, and particularly preferably 50 μm or more. Furthermore, the thickness of the workpiece holding layer 2 is more preferably 750 μm or less, even more preferably 700 μm or less, even more preferably 650 μm or less, and particularly preferably 600 μm or less. The thickness of the workpiece holding layer 2 can be measured using a 1 / 100 dial gauge with a measurement unit diameter (φ) of 20 mm.

[0028] The ratio of the thickness H2 of the support 1 to the thickness H1 of the workpiece holding layer 2 (H2 / H1) is preferably 0.1 or more, more preferably 0.5 or more, and even more preferably 1.0 or more. Furthermore, the H2 / H1 ratio is preferably 100 or less, more preferably 70 or less, and even more preferably 50 or less.

[0029] As described above, the workpiece holding layer 2 is composed of a resin composition. The aforementioned resin composition preferably contains a silicone resin or a fluororesin. The workpiece holding layer 2 is preferably composed of a rubber layer or a foam layer. Because the workpiece holding layer 2 is composed of a rubber layer or a foam layer, the workpiece holding layer 2 has excellent cushioning properties. Furthermore, if the workpiece holding layer 2 is constructed as a foam layer, the workpiece holding layer 2 will have even better cushioning properties. When the workpiece holding layer 2 is configured as a foam layer, the foam layer has air bubbles. The bubbles may have various shapes. The shape of the bubbles may be perfectly spherical or partially distorted and roughly spherical. Furthermore, the bubbles may be greatly distorted and have an irregular shape. In short, the bubble can be of any shape as long as it contains a gas such as air inside.

[0030] By using a resin composition containing silicone rubber (hereinafter also referred to as a silicone rubber-containing composition) or a resin composition containing fluororubber (hereinafter also referred to as a fluororubber-containing composition) as the aforementioned resin composition, the workpiece holding layer 2 can be configured as a rubber layer. Examples of silicone rubber-containing compositions include addition (hydrosilylation) reaction type silicone rubber compositions and organic peroxide curing type silicone rubber compositions. Examples of the addition (hydrosilylation) reaction type silicone rubber composition include one containing an alkenyl group-containing organopolysiloxane having two or more alkenyl groups, such as vinyl groups, in one molecule; an organohydrogenpolysiloxane having two or more, preferably three or more, SiH groups (usually in an amount such that the molar ratio of SiH groups to alkenyl groups is 0.5 to 4); and a platinum group metal-based addition reaction catalyst, such as platinum or a platinum compound (usually in an amount of 1 to 1,000 ppm relative to the alkenyl group-containing organopolysiloxane). Examples of the organic peroxide-curing type silicone rubber composition include an organopolysiloxane having two or more alkenyl groups in one molecule, to which an effective amount of organic peroxide as a curing agent is added (usually 1 to 10 parts by mass per 100 parts by mass of the organopolysiloxane). Furthermore, the fluororubber-containing composition includes a copolymer that, as fluororubber, typically has fluorine atoms bonded to carbon atoms constituting the main chain and possesses rubber elasticity. Examples of such fluororubbers include vinylidene fluoride (VdF) / hexafluoropropylene (HFP) copolymer, VdF / HFP / tetrafluoroethylene (TFE) copolymer, TFE / propylene copolymer, TFE / propylene / VdF copolymer, ethylene / HFP copolymer, ethylene / HFP / VdF copolymer, and ethylene / HFP / TFE copolymer.

[0031] Furthermore, by forming the workpiece holding layer 2 in a foamed state of the resin composition, the workpiece holding layer 2 can be made into a foamed layer. If the aforementioned resin composition is a resin composition containing fluororesin (hereinafter also referred to as a fluororesin-containing composition), the resin composition can be made foamed by adding various foaming agents to the fluororesin-containing composition in addition to the fluororesin. Examples of fluororesins included in the aforementioned fluororesin-containing composition include tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), and tetrafluoroethylene-ethylene copolymer (ETFE). Examples of various blowing agents include chlorofluorocarbons (CFCs), inert gases (such as argon), carbon dioxide, nitrogen, and hydrocarbons (such as propane, butane, pentane, and hexane). Furthermore, the fluororesin-containing composition may also contain a nucleating agent in addition to the fluororesin and various foaming agents. Examples of the nucleating agents include boron nitride (BN), silicon dioxide, titanium dioxide, alumina, and magnesia.

[0032] If the resin composition is a resin composition containing a silicone resin (hereinafter also referred to as a silicone resin-containing composition), the silicone resin-containing composition may be foamed by thermal curing to form the workpiece holding layer 2 as a foamed layer. In other words, when constructing the workpiece holding layer 2 as a foam, a silicone resin-containing composition that foams by thermosetting may be used. Examples of such silicone resin-containing compositions include those containing at least the following components (A) to (F) in the following mass ratios. (A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups in one molecule, (B) Organopolysiloxane having at least two silicon-bonded hydrogen atoms in one molecule (in an amount such that the silicon-bonded hydrogen atoms in component (B) are 0.4 moles or more and 20 moles or less per mole of alkenyl groups in component (A)), (C) A mixture consisting of water and an inorganic thickener, 100 parts by mass or more and 1000 parts by mass or less. (D)(D-1) A nonionic surfactant with an HLB value of 3 or more, and (D-2) A nonionic surfactant with an HLB value of less than 3, in an amount of 0.1 parts by mass or more and 15 parts by mass or less (provided that the mass ratio of component (D-1) to component (D-2) is at least 1). (E) Hydroxysilylation reaction catalyst, (F) Curing retarder: 0.001 parts by mass or more and 5 parts by mass or less.

[0033] Component (A) is the main component of this silicone resin-containing composition. (A) Examples of alkenyl groups in component (A) include vinyl groups, allyl groups, and hexenyl groups, with vinyl groups being preferred. Furthermore, examples of silicon atom-bonded organic groups other than alkenyl groups in component (A) include alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, and hexyl groups; aryl groups such as phenyl, tolyl, and xyl groups; aralkyl groups such as benzyl and phenethyl groups; and halogen-substituted alkyl groups such as 3,3,3-trifluoropropyl groups, with methyl groups being preferred.

[0034] Component (A) specifically includes dimethylvinylsiloxy group-sealed dimethylpolysiloxane, dimethylvinylsiloxy group-sealed dimethylsiloxane / methylphenylsiloxane copolymer, trimethylsiloxy group-sealed methylvinylpolysiloxane, trimethylsiloxy group-sealed dimethylsiloxane / methylvinylsiloxane copolymer, and trimethylsiloxy group-sealed dimethylsiloxane / methylvinylsiloxane / methylphenylsiloxane copolymer, preferably a diorganopolysiloxane in which the main chain is substantially linear.

[0035] Component (B) is a crosslinking agent for this silicone resin-containing composition. The bonding position of the silicon atom-bonded hydrogen atom in component (B) is not limited, and examples include the molecular chain terminals and / or molecular chain side chains. Examples of silicon atom-bonded organic groups other than hydrogen atoms in component (B) include alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, and hexyl groups; aryl groups such as phenyl, tolyl, and xyl groups; aralkyl groups such as benzyl and phenethyl groups; and halogen-substituted alkyl groups such as 3,3,3-trifluoropropyl groups, with methyl groups being preferred.

[0036] Such components (B) include dimethylhydrogensiloxy group-sealed dimethylpolysiloxane, dimethylhydrogensiloxy group-sealed dimethylsiloxane / methylhydrogensiloxane copolymer, trimethylsiloxy group-sealed methylhydrogenpolysiloxane, trimethylsiloxy group-sealed dimethylsiloxane / methylhydrogensiloxane copolymer, and (CH3)3SiO 1 / 2 The siloxane units shown are H(CH3)2SiO 1 / 2 Siloxane units and SiO shown 4 / 2 Examples of organopolysiloxanes consisting of siloxane units represented by are shown, preferably linear organopolysiloxanes.

[0037] The content of component (B) is such that, per mole of alkenyl group in component (A), the amount of silicon-bonded hydrogen atoms in component (B) is in the range of 0.4 moles to 20 moles, preferably in the range of 1.5 moles to 20 moles, and more preferably in the range of 1.5 moles to 10 moles. This is because, when the number of moles of silicon atom-bonded hydrogen in component (B) is within the above range, the compression set of the workpiece holding layer 2, which is composed of this silicone resin-containing composition, is improved.

[0038] Component (C) is a component for making the workpiece holding layer 2 a silicone sponge by removing the water from component (C) from the silicone crosslinked body obtained by crosslinking the silicone resin-containing composition. Since component (C) is stably dispersed in component (A), it is preferable that the water in component (C) is ion-exchanged water. In this silicone resin-containing composition, a foam is formed after crosslinking and curing by removing water from component (C). Therefore, the foam has a structure in which the paths through which water is removed are interconnected. In other words, the foam formed by this silicone resin-containing composition has a connected cell structure.

[0039] The inorganic thickener in component (C) is added to increase the viscosity of water, to facilitate the dispersion of component (C) in component (A), and to stabilize the dispersion state of component (C). Examples of inorganic thickeners include natural or synthetic smectite clays such as bentonite, montmorillonite, hectorite, saponite, soconite, byderite, and nontronite; magnesium aluminum silicate; and composites thereof with water-soluble organic polymers such as carboxyvinyl polymers. Preferably, the thickener is a smectite clay such as bentonite or montmorillonite. Examples of such smectite clays include Smecton SA (manufactured by Kunimine Industries Co., Ltd.), a hydrothermally synthesized product, and Bengel (manufactured by Hojun Co., Ltd.), a naturally refined product. The pH of these smectite clays is preferably in the range of 5.0 to 9.0 from the viewpoint of maintaining the heat resistance of the silicone sponge. Furthermore, the content of the inorganic thickener in component (C) is preferably in the range of 0.1 parts by mass to 10 parts by mass, and more preferably in the range of 0.5 parts by mass to 5 parts by mass, per 100 parts by mass of water.

[0040] The content of component (C) is in the range of 100 parts by mass or more and 1000 parts by mass or less per 100 parts by mass of component (A), preferably in the range of 100 parts by mass or more and 800 parts by mass or less, more preferably in the range of 100 parts by mass or more and 500 parts by mass or less, even more preferably in the range of 200 parts by mass or more and 500 parts by mass or less, and particularly preferably in the range of 200 parts by mass or more and 350 parts by mass or less. This is because if the content of component (C) is above the lower limit of the above range, the resulting workpiece holding layer 2 can be made low density, and if it is below the upper limit of the above range, the resulting workpiece holding layer 2 can have a uniform and fine continuous cell structure.

[0041] The surfactant of component (D) consists of (D-1) a nonionic surfactant with an HLB value of 3 or more and (D-2) a nonionic surfactant with an HLB value of less than 3. Examples of surfactants for component (D) include glycerin fatty acid esters, polyglycerin fatty acid esters, sorbitan fatty acid esters, sucrose fatty acid esters, polyethylene glycol fatty acid esters, polypropylene glycol fatty acid esters, polyoxyethylene glycerin fatty acid esters, polyoxyethylene sorbitan fatty acid esters, polyoxyethylene / polyoxypropylene block copolymers, polyoxyethylene alkyl ethers, polyoxyethylene alkylphenyl ethers, and polyoxyethylene fatty acid amides.

[0042] Component (D) consists of component (D-1) and component (D-2), and the mass ratio of component (D-1) to component (D-2) is 1 or more, preferably 5 or more, more preferably 8 or more, even more preferably 10 or more, and particularly preferably 15 or more. Furthermore, the mass ratio of component (D-1) to component (D-2) is preferably 100 or less, more preferably 80 or less, even more preferably 70 or less, particularly preferably 60 or less, and most particularly preferably 50 or less. This is because, if this mass ratio is greater than the lower limit, the workpiece holding layer 2 can be made low-density with a uniform, fine, open-cell structure, and if it is smaller than the upper limit, component (C) can be stably dispersed in components (A) and (B), and as a result, the workpiece holding layer 2 can be made to have a uniform, fine, open-cell structure.

[0043] The content of component (D) is preferably within the range of 0.1 parts by mass to 15 parts by mass, and more preferably within the range of 0.2 parts by mass to 3 parts by mass, per 100 parts by mass of component (A). This is because if the content of component (D) is above the lower limit of the above range, the workpiece holding layer 2 can have a uniform and fine continuous cell structure, and if it is below the upper limit of the above range, the workpiece holding layer 2 can have excellent heat resistance.

[0044] Component (E) is a hydrosilylation reaction catalyst for promoting the hydrosilylation reaction in the silicone resin-containing composition, and examples include platinum-based catalysts, palladium-based catalysts, and rhodium-based catalysts. Among these various catalysts, it is preferable to use a platinum-based catalyst. Examples of such (E) components include chloroplatinic acid, alcohol-modified chloroplatinic acid, coordination compounds of chloroplatinic acid with olefins, vinylsiloxanes, or acetylene compounds, coordination compounds of platinum with olefins, vinylsiloxanes, or acetylene compounds, tetrakis(triphenylphosphine)palladium, and chlorotris(triphenylphosphine)rhodium.

[0045] The amount of component (E) is sufficient to crosslink the silicone resin-containing resin. Specifically, it is preferable that the amount of catalyst metal in component (E) is within the range of 0.01 ppm to 500 ppm by mass, and more preferably within the range of 0.1 ppm to 100 ppm, relative to the total amount of components (A) and (B).

[0046] To adjust the curing speed and working time, this silicone resin-containing resin composition may also contain (F) a curing retarder. Examples of such (F) components include alkyne alcohols such as 3-methyl-1-butyne-3-ol, 3,5-dimethyl-1-hexyne-3-ol, 3-phenyl-1-butyne-3-ol, and 1-ethynyl-1-cyclohexanol. The content of component (F) is appropriately selected depending on the method of use and molding of the silicone resin-containing composition, but is generally in the range of 0.001 parts by mass or more and 5 parts by mass or less per 100 parts by mass of component (A).

[0047] From the viewpoint of improving the strength of the resulting workpiece holding layer 2, the silicone resin-containing composition may further contain (G) reinforcing silica fine powder. For such a (G) component, the BET specific surface area is 50 m². 2 / g or more 350m 2 A silica fine powder with a content of 1 / g or less is preferred, and 80m 2 / g or more 250m 2 A fine silica powder with a content of less than / g is more preferable. Examples of such silica fine powders include fumed silica and precipitated silica. Furthermore, these silica fine powders may be surface-treated with organosilanes or the like.

[0048] The content of component (G) is 20 parts by mass or less, preferably 15 parts by mass or less, and more preferably 10 parts by mass or less, per 100 parts by mass of component (A). Furthermore, it is preferable that the content of component (G) is 0.1 parts by mass or more per 100 parts by mass of component (A).

[0049] This silicone resin-containing composition may contain pigments such as carbon black or red iron oxide, as long as it does not impair the purpose of the present invention.

[0050] This silicone resin-containing composition can be easily manufactured by uniformly mixing the above components, or compositions containing various additives as needed, using known kneading methods. Examples of mixers used here include homomixers, paddle mixers, homodispersers, colloid mills, vacuum mixing and stirring mixers, and rotational and revolutionary mixers, but are not particularly limited as long as they can sufficiently disperse components (C) and (D) in component (A).

[0051] In addition, the workpiece holding layer 2 may be constructed as a foam layer using a silicone resin-containing composition, similar to the example of the fluororesin-containing composition described above. In other words, the workpiece holding layer 2 may be constructed as a foamed layer by using a silicone resin-containing composition that includes various foaming agents in addition to the silicone resin.

[0052] When the workpiece holding layer 2 is constructed as a foam layer, the apparent density of the foam layer is 0.05 g / cm³. 3 More than 0.90g / cm 3 The following is preferable: The apparent density of the foam layer is 0.10 g / cm³. 3 It is more preferable that the amount be greater than or equal to 0.15 g / cm³. 3 It is even more preferable that the above conditions are met. Furthermore, the apparent density of the foam layer is 0.85 g / cm³. 3 It is more preferable that the following is the case: 0.80 g / cm³ 3 The following is even more preferable:

[0053] The apparent density of the foam layer can be measured according to the following procedure. (1) A test specimen is obtained by punching out the workpiece holding layer 2, which is composed of a foam layer, into a rectangular shape in plan view using a 100mm x 100mm punching die. (2) The planar dimensions of the test specimen are measured, and the thickness of the test specimen is measured using a 1 / 100 dial gauge with a measuring terminal diameter (φ) of 20 mm. (3) The volume of the test specimen is calculated from the planar dimensions and the thickness of the test specimen. (4) The mass of the test specimen is measured using a balance scale with a minimum division of 0.01 g or more. (5) The apparent density of the test specimen is calculated from the volume and mass of the test specimen, and this calculated value is taken as the apparent density of the foam layer.

[0054] When the workpiece holding layer 2 is constructed as a foam layer, the average bubble diameter of the foam layer is preferably 1 μm or more and 100 μm or less. The average bubble diameter of the foam layer is more preferably 2 μm or larger, and more preferably 3 μm or larger. Furthermore, the average bubble diameter of the foam layer is more preferably 80 μm or less, and even more preferably 70 μm or less.

[0055] The average bubble diameter of the foam layer can be determined by performing image analysis on magnified images captured using a low-vacuum scanning electron microscope ("S-3400N type scanning electron microscope," manufactured by Hitachi High-Tech Science Systems Corporation) using image analysis software (product name "Win ROOF," manufactured by Mitani Corporation). The number of bubbles visible in the magnified image is approximately 100. Furthermore, the cross-section of the foam is obtained by cutting the foam using a razor blade in the TD direction (direction perpendicular to the resin flow direction) and perpendicular to the main surface of the foam (thickness direction). Furthermore, image analysis is used to determine the length of each bubble in the TD direction.

[0056] When the workpiece holding layer 2 is configured as a foam layer, it is preferable that the arithmetic mean roughness Ra of the surface of the foam layer that comes into contact with the support 1 is 0.1 μm or more and 50 μm or less. The foam layer is more preferably 0.5 μm or more, and even more preferably 1.0 μm or more, of the surface in contact with the support 1. Furthermore, the foam layer is more preferably 30 μm or less in arithmetic mean roughness Ra of the surface in contact with the support 1, and even more preferably 20 μm or less. In the foam layer, the arithmetic mean roughness Ra of the surface in contact with the support 1 is within the above numerical range, thereby allowing the foam layer to be sufficiently fixed by the support 1. In the foam layer, the arithmetic mean roughness Ra of the surface in contact with the support 1 can be measured in the same manner as described above for the "arithmetic mean roughness Ra of the surface on the support 1 on which the workpiece holding layer 2 is held".

[0057] When the workpiece holding layer 2 is configured as a foam layer, it is preferable that the foam layer has an open-cell structure. The open-cell structure can be formed, for example, using a silicone resin-containing composition as described above. A continuous cell structure refers to a structure in the foam layer in which adjacent cells are connected to each other. Because the foam has an open-cell structure, when one side of the work-holding layer 2, which is the foam layer, is attached to the support 1, which is the first adherend, or when the other side is attached to the workpiece (substrate, etc.), which is the second adherend, it is possible to suppress the trapping of air bubbles between the attachment surface of the first adherend and one side of the work-holding layer 2, and between the attachment surface of the second adherend and the other side of the work-holding layer 2. Therefore, the first adherend and the second adherend can be suitably held in the workpiece holding layer 2, which is a foam layer. Furthermore, because the foam layer has an open-cell structure, in the manufacturing of electronic component devices, after mounting the electronic components onto the substrate, it becomes easier to peel the substrate from the foam layer (workpiece holding layer 2) without leaving any adhesive residue. Furthermore, even if the foamed workpiece holding layer 2 becomes dirty, its holding (adsorption) properties can be restored by washing it with water, thereby improving the reusability of the workpiece holding layer 2. Furthermore, because the foam layer has an open-cell structure, the above-mentioned effects can be fully realized even if the thickness of the foam layer is reduced.

[0058] When the foam layer has an open-cell structure, the open-cell ratio is preferably 90% or more, more preferably 90% to 100%, even more preferably 92% to 100%, even more preferably 95% to 100%, particularly preferably 99% to 100%, and optimally substantially 100%. By keeping the open-cell ratio within the above numerical range, excellent bubble release properties can be achieved, and the trapping of bubbles between the adherend surface of the substrate or support and the surface of the foam layer can be suppressed. Furthermore, it becomes easier to peel off the substrate or other adherend from the foam layer without leaving any adhesive residue.

[0059] Preferably, in the foam layer, the diameter of 90% or more of the total bubbles is 80 μm or less; more preferably, the diameter of 92% or more of the total bubbles is 80 μm or less; even more preferably, the diameter of 95% or more of the total bubbles is 80 μm or less; even more preferably, the diameter of 97% or more of the total bubbles is 80 μm or less; and optimally, the diameter of substantially 100% of all cells is 80 μm or less. By ensuring that all bubbles have a diameter of 80 μm within the above numerical range, the foam layer can exhibit superior air release properties, further suppressing the formation of bubbles between the adherend surface of the substrate or support and the surface of the foam layer. Furthermore, it becomes easier to peel off the substrate or other adherend from the foam layer without leaving any adhesive residue.

[0060] Before heating the workpiece holding layer 2 at a temperature of 150°C or higher, the shear adhesion value S to the polyimide film is 1 N / 100 mm. 2 That's all. Furthermore, 150°C is the temperature used in the annealing process when transparent electrode films, such as IZO films or ITO films, are mounted onto a transparent substrate by sputtering or other methods during the manufacturing of organic EL devices. The shear adhesion value S is 2N / 100mm 2 Preferably, the above, 3N / 100mm 2 It is more preferable that the above is true, and 4N / 100mm 2 It is even more preferable that the above is true, 5N / 100mm 2 It is especially preferable that the above conditions are met. Furthermore, the shear adhesion value S is 10 N / 100 mm 2 Preferably, the following: 9N / 100mm 2 The following is more preferable: 8N / 100mm 2 It is even more preferable that the following conditions apply: 7N / 100mm 2 It is even more preferable that the following conditions apply: 6N / 100mm 2 The following is particularly preferable: The upper limit for temperatures above 150°C is preferably 270°C. In the manufacturing of semiconductor devices, semiconductor chips are attached to a wiring circuit board to obtain a wiring circuit board with semiconductor chips, and then the wiring circuit board with semiconductor chips is reflow-treated in a reflow oven. The reflow process is carried out by heating the wiring circuit board with the semiconductor chip at 180°C for a predetermined time, and then heating it at 270°C for a predetermined time. In other words, 270°C is the highest temperature achievable during the reflow process. The value S of the shear adhesion force of the workpiece holding layer 2 to the support 1 before heating to a temperature of 150°C or higher can be measured using a tensile testing machine (model: DT9503-1000N, manufactured by Tansui Co., Ltd.) according to the following procedure. Furthermore, as a polyimide film, for example, "Kapton 100H" manufactured by Toray DuPont can be used. (1) A support 1 is placed on one side of a workpiece holding layer 2 with planar dimensions of 30 mm x 30 mm to obtain a first laminate, and then a 2 kg roller is passed back and forth once on the first laminate to press the workpiece holding layer 2 onto the support 1. When installing, take care to avoid trapping air bubbles as much as possible. Subsequently, the first laminated structure, after the compression process, is heat-treated at 260°C for 3 hours using a hot-air oven. This allows for the fabrication of the workpiece holding member 10. (2) After lowering the temperature to 23°C and leaving it at that temperature for 120 minutes, a polyimide film is placed on the exposed surface of the workpiece holding layer 2 (the side opposite to the side to which the support 1 is attached) to obtain a second laminate. Then, a 2 kg roller is passed back and forth once on the second laminate to press the polyimide film onto the workpiece holding layer 2 and obtain a test specimen for evaluating shear adhesion strength. (3) Thirty minutes after the polyimide film has been pressed onto the workpiece holding layer 2, the test specimen is set in the tensile testing machine so that the center line of the test specimen coincides with the center line of the grip of the tensile testing machine. Then, when the polyimide film is pulled in the shear direction at a tensile speed of 50 mm / min, the load at which the polyimide film peels off from the workpiece holding layer 2 (i.e., the maximum load) is measured. (4) For each of the five test specimens, perform (1) to (3), measure the maximum load for each specimen, and then take the arithmetic mean of these measurements. Then, the arithmetic mean is 100 mm 2 The shear adhesion strength is calculated by proportionally converting it to the value per unit.

[0061] After heating the workpiece holding layer 2 at a temperature of 150°C or higher for 5 minutes, the 90° peel force P value for the polyimide film is 7N / 20mm or less. The peeling force value P is preferably 10 N / 20 mm or less, more preferably 5 N / 20 mm or less, even more preferably 1 N / 20 mm or less, and even more preferably 0.1 N / 20 mm or less. The lower limit of the peeling force value P is typically 0.01 N / 20 mm. As mentioned above, the upper limit for temperatures above 150°C is preferably 270°C. The 90° peel force of the workpiece holding layer 2 on the polyimide film after heating at a temperature of 150°C or higher for 5 minutes can be measured using a tensile testing machine (model: AGS-X-5000N, manufactured by Shimadzu Corporation) according to the following procedure. Furthermore, as a polyimide film, for example, "Kapton 100H" manufactured by Toray DuPont can be used. (1) A support 1 is placed on one side of a workpiece holding layer 2 with planar dimensions of 30 mm x 30 mm to obtain a first laminate, and then a 2 kg roller is passed back and forth once on the first laminate to press the workpiece holding layer 2 onto the support 1. When installing, take care to avoid trapping air bubbles as much as possible. Subsequently, the first laminated structure, after the compression process, is heat-treated at 260°C for 3 hours using a hot-air oven. This allows for the fabrication of the workpiece holding member 10. (2) After lowering the temperature to 23°C and leaving it at that temperature for 120 minutes, a 20 mm wide polyimide film is placed on the exposed surface of the workpiece holding layer 2 (the side opposite to the side to which the support 1 is attached) to obtain a second laminate. Then, a 2 kg roller is passed back and forth once on the second laminate to press the polyimide film onto the workpiece holding layer 2 and obtain a test specimen for evaluating the 90° peel strength. (3) Thirty minutes after the polyimide film is pressed onto the workpiece holding layer 2, the test specimen for evaluating the 90° peel strength is reflowed under the following conditions. • Reflow processing conditions (a) After placing a test specimen for evaluating 90° peel strength into a reflow oven with an internal temperature of 50°C, the test specimen for evaluating 90° peel strength is held at a temperature of 50°C for 50 seconds. (b) Raise the furnace temperature from 50°C to 180°C in 60 seconds, then maintain the temperature at 180°C for 100 seconds. (c) Raise the furnace temperature from 180°C to 270°C in 60 seconds, then maintain the temperature at 270°C for 100 seconds. (d) Reduce the furnace temperature from 270°C to 100°C in 100 seconds. Then, the furnace temperature is lowered to 23°C, and the test specimen for evaluating the 90° peeling force is left at this temperature for 30 minutes, after which the test specimen for evaluating the 90° peeling force is removed from the reflow furnace. Next, the test specimen for evaluating the 90° peel force, which was removed from the reflow oven, is subjected to a tensile testing machine to measure the peel force (N / 20mm) when the polyimide film is peeled off the test specimen after it has passed through the reflow oven, under the conditions of a peel angle of 90° and a tensile speed of 300 mm / min. (4) For each of the five test specimens, (1) to (3) are performed, and the 90° peel force is measured for each specimen. The arithmetic mean of these measured values ​​is defined as the 90° peel force.

[0062] [Laminated structure] As shown in Figure 2, the laminated body 20 according to one embodiment of the present invention comprises a workpiece holding member 10' having a support 1' and a workpiece holding layer 2' laminated on the support 1' to hold a workpiece, and a workpiece 3 held on the workpiece holding layer 2'. In the laminate 20 according to this embodiment, the workpiece holding member 10' is configured as the workpiece holding member 10 according to this embodiment, as described above. In other words, the support 1' and workpiece holding layer 2' are configured in the same way as the support 1 and workpiece holding layer 2 described earlier. Furthermore, as explained earlier, workpiece 3 is preferably one selected from the group consisting of a ceramic substrate, a silicon substrate, a glass substrate, and a resin film substrate. Examples of the aforementioned resin film substrate include polyimide film and polyethylene naphthalate film. As the laminate 20 according to this embodiment is configured as described above, it suppresses warping of the workpiece 3 during surface mounting of electronic components, and also allows the workpiece 3 (substrate) to be sufficiently fixed before the heat treatment during surface mounting of electronic components, and makes it easy to remove the workpiece 3 (substrate) from the workpiece holding layer 2' after the heat treatment during surface mounting of electronic components.

[0063] [Manufacturing method for electronic component devices] A method for manufacturing an electronic component according to one embodiment of the present invention is: A workpiece holding step S1 involves holding a workpiece on the workpiece holding layer of a workpiece holding member, which comprises a support and a workpiece holding layer laminated on the support for holding a workpiece, An electronic component mounting step S2 is performed in which an electronic component is mounted on one surface of the workpiece held on the workpiece holding layer, The process includes a workpiece removal step S3, which involves removing the workpiece on which the electronic components are mounted from the workpiece holding layer of the workpiece holding member. Furthermore, in the method for manufacturing electronic components according to this embodiment, the workpiece holding member is configured as the workpiece holding member 10 according to this embodiment, as described earlier.

[0064] In the following, we will explain the manufacturing method of semiconductor devices as an example of a method for manufacturing electronic components, referring to Figures 3A to 3E. In the following, the process from mounting the semiconductor chip SC onto workpiece 3 to resin sealing with sealing resin will be described as the electronic component mounting process S2.

[0065] (Workpiece holding process S1) As shown in Figures 3A and 3B, in the workpiece holding process S1, the workpiece 3, which is a substrate, is held on the workpiece holding layer 2 of the workpiece holding member 10. In other words, it forms a laminated structure 20 as described above. In the method for manufacturing a semiconductor device, the substrate is preferably a wiring circuit board on which a circuit is formed on at least one surface. The workpiece holding member 10 can be obtained by laminating the workpiece holding layer 2 onto the support 1 before holding the workpiece 3, which is the substrate, on the workpiece holding layer 2. The lamination of the workpiece holding layer 2 onto the support 1 can be carried out by laminating the workpiece holding layer 2, which is formed in film form, onto the support 1. Alternatively, this can be carried out by applying a resin composition, which will be the raw material for the workpiece holding layer 2, to the support 1 and drying it to form a film-like workpiece holding layer 2 on the support 1. Furthermore, when applying a resin composition, which is the raw material for the workpiece holding layer 2, to the support 1 and drying it, a primer liquid may be applied to the support 1 before applying the resin composition to the support 1. In other words, after applying the primer liquid to the support 1, the resin composition may be applied and dried to form the workpiece holding layer 2 on the support 1. As the primer liquid, a resin composition containing various known resins such as acrylic resin, urethane resin, epoxy resin, and silicone resin can be used. The workpiece holding process S1 is carried out in the manner described above.

[0066] (Electronic component mounting process S2) In the electronic component mounting process S2 of the semiconductor device manufacturing method, first, a semiconductor chip SC is mounted on the substrate, which is the workpiece 3, as shown in Figure 3C. In the manufacturing method of the electronic component according to this embodiment, the semiconductor chip SC comprises a semiconductor chip body CB and a bump electrode BE disposed on one surface of the semiconductor chip body CB. Furthermore, a connecting conductor portion is formed on one surface of the substrate, which is workpiece 3 (not shown). Therefore, the semiconductor chip SC is attached to the substrate, which is workpiece 3, by connecting the bump electrode BE of the semiconductor chip SC to the connecting conductor portion of the substrate, which is workpiece 3. The connection of the bump electrode BE of the semiconductor chip SC to the connecting conductor portion of the substrate, which is workpiece 3, can be performed by first obtaining an assembly in which the semiconductor chip SC is placed on the substrate, which is workpiece 3, with the bump electrode BE in contact with the connecting conductor portion, and then heating the assembly in a reflow oven (reflow processing). In the aforementioned reflow process, the support substrate on which the semiconductor chip stack is attached is typically processed at a high temperature of 180°C or higher for a predetermined time. The maximum temperature reached during the reflow process is typically 270°C. Here, the workpiece holding member used in the semiconductor device manufacturing method is the workpiece holding member 10 according to this embodiment, so that the substrate, which is the workpiece 3, does not warp even after reflow processing. Furthermore, before the reflow process, the substrate, which is the workpiece 3, can be sufficiently fixed onto the workpiece holding layer of the workpiece holding member.

[0067] In the electronic component mounting step S2 of the semiconductor device manufacturing method, the semiconductor chip SC mounted on the substrate, which is the workpiece 3, is then sealed with sealing resin ER by connecting the bump electrode BE to the connecting conductor portion, as shown in Figure 3D. Typically, thermosetting resins such as epoxy resins and phenolic resins are used as the sealing resin (ER). Therefore, when resin-encapsulating the semiconductor chip SC mounted on the substrate, which is workpiece 3, the semiconductor chip SC is covered with encapsulating resin ER, and then heated to a temperature that allows the encapsulating resin ER to heat-cur (for example, 150°C). As described above, the electronic component mounting process S2 in the semiconductor device manufacturing method is carried out. As a result, a semiconductor package P is formed on the substrate, which is workpiece 3.

[0068] (Workpiece removal process S3) In the workpiece removal step S3 of the semiconductor device manufacturing method, the substrate, which is the workpiece 3 on which the semiconductor package P is placed, is removed from the workpiece holding layer 2 of the workpiece holding member. The removal of the substrate, which is the workpiece 3, from the workpiece holding layer 2 can be performed, for example, by using a suction device to apply a suction force greater than the force with which the workpiece holding layer 2 holds the substrate, and by suctioning the side of the semiconductor package P on which the substrate is not placed. Furthermore, since the workpiece holding member used in the semiconductor device manufacturing method is the workpiece holding member 10 according to this embodiment, the holding force (adhesion force) of the workpiece holding layer 2 to the substrate, which is the workpiece 3, is reduced after the reflow process. In other words, the substrate, which is the workpiece 3, is easily removable from the workpiece holding layer 2. Therefore, even with a relatively small suction force, the substrate (workpiece 3) can be efficiently removed from the workpiece holding layer 2. As described above, the semiconductor package P with the workpiece 3 attached, after the workpiece 3 has been removed from the workpiece holding layer 2, may be used as a semiconductor device in its current state. Alternatively, the semiconductor package P with workpiece 3 may be divided using a dicing blade or the like in a way that includes a predetermined number of semiconductor chips SC, thereby forming multiple semiconductor devices.

[0069] Furthermore, a plasma treatment step S1' in which the substrate, which is the workpiece 3, is treated by plasma discharge may be performed between the workpiece holding step S1 and the electronic component mounting step S2. The plasma treatment process S1' can be carried out using various known plasma cleaning devices. By performing the plasma treatment process S1' before the electronic component mounting process S2, the exposed substrate pad metal surface and other surfaces of the substrate, which is the workpiece 3, can be cleaned to remove organic contaminants.

[0070] Furthermore, in the electronic component mounting process S2, plasma treatment may be performed on the semiconductor chip SC before resin encapsulation with the encapsulating resin ER. Plasma treatment of semiconductor chips SC can be carried out in the same manner as the plasma treatment process S1' described earlier. Furthermore, after plasma treatment has been performed on the semiconductor chip SC, and before resin encapsulation with the encapsulating resin ER, an underfill treatment may be performed in which the area around the bump electrode BE is sealed with an underfill material such as epoxy resin. By performing an underfill treatment, the underfill material can be placed around the bump electrode BE, where the sealing resin ER is difficult to spread, thereby enabling accurate resin sealing with the sealing resin ER.

[0071] Above, the method for manufacturing electronic components was explained using the method for manufacturing semiconductor devices as an example, but this method for manufacturing electronic components can be applied to methods other than manufacturing semiconductor devices. For example, the method for manufacturing the electronic component device can also be applied to the method for manufacturing an organic EL device. In the manufacturing method of the organic EL device, a transparent substrate is used as the workpiece, and in the electronic component mounting process S2, transparent electrode films such as IZO and ITO, which are electronic components, are mainly attached to the transparent substrate, which is the workpiece, by sputtering or the like. Then, in the electronic component mounting process S2, after attaching the transparent electrode film to the transparent substrate, the transparent electrode film is annealed at a temperature of approximately 150°C. Even in the above-described method for manufacturing electronic components, which involves annealing in the electronic component mounting process S2, it is possible to suppress warping of the transparent substrate, which is the workpiece, after the annealing process. Furthermore, before the annealing process, the transparent substrate, which is the workpiece, can be sufficiently fixed onto the workpiece holding layer of the workpiece holding member. Furthermore, in the workpiece removal process S3, the transparent substrate, which is the workpiece, can be removed from the workpiece holding layer relatively easily.

[0072] The matters disclosed herein include the following:

[0073] (1) It comprises a support and a workpiece holding layer laminated on the support for holding a workpiece, The support has a ratio of the value of the three-point bending stress to the value of the coefficient of linear expansion of 0.3 or more. The workpiece holding layer is composed of a resin composition, and before heating at a temperature of 150°C or higher, the shear adhesion value S to the polyimide film is 1 N / 100 mm. 2 Furthermore, after heating at a temperature of 150°C or higher for 5 minutes, the value P of the 90° peel strength to the polyimide film is 7N / 20mm or less. Workpiece holding member.

[0074] With this configuration, the workpiece holding member can suppress warping of the workpiece due to the heat treatment during surface mounting of electronic components, and can also securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easy to remove the substrate after the heat treatment during surface mounting of electronic components.

[0075] (2) The three-point bending stress of the support is 5N / 10mm or more. The workpiece holding member described in (1) above.

[0076] With this configuration, the workpiece holding member can further suppress warping of the workpiece due to the heat treatment during surface mounting of electronic components, and can also more securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0077] (3) The coefficient of linear expansion of the support is 30 × 10 -6 / ℃ or lower The workpiece holding member described in (1) or (2) above.

[0078] With this configuration, the workpiece holding member can further suppress warping of the workpiece due to the heat treatment during surface mounting of electronic components, and can also more securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0079] (4) The ratio (S / P) of the shear adhesion force value S to the 90° peel force value P is 5 or more. A workpiece holding member as described in any of (1) to (3) above.

[0080] With this configuration, the workpiece holding member can further suppress warping of the workpiece due to the heat treatment during surface mounting of electronic components, and can also more securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0081] (5) The support has an arithmetic mean roughness Ra of 2 μm or less on the surface on which the workpiece holding layer is laminated. A workpiece holding member as described in any of (1) to (4) above.

[0082] With this configuration, the workpiece holding layer can be more securely fixed to the support.

[0083] (6) The aforementioned resin composition includes a silicone resin or a fluororesin. A workpiece holding member as described in any of (1) to (5) above.

[0084] With this configuration, the workpiece holding member can further suppress warping of the workpiece during surface mounting of electronic components, moreover, it can securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0085] (7) The workpiece holding layer is configured as a rubber layer or a foam layer. The workpiece holding member described in (6) above.

[0086] With this configuration, the workpiece holding member can further suppress warping of the workpiece during surface mounting of electronic components, moreover, it can securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0087] (8) The apparent density of the foam layer is 0.05 g / cm³. 3 More than 0.90g / cm 3 The following is The workpiece holding member described in (7) above.

[0088] With this configuration, the workpiece holding member can further suppress warping of the workpiece during surface mounting of electronic components, moreover, it can securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0089] (9) The average bubble diameter of the foam layer is between 1 μm and 100 μm. The workpiece holding member described in (7) or (8) above.

[0090] With this configuration, the workpiece holding member can further suppress warping of the workpiece during surface mounting of electronic components, moreover, it can securely fix the workpiece before the heat treatment during surface mounting of electronic components, and makes it easier to remove the workpiece after the heat treatment during surface mounting of electronic components.

[0091] (10) In the aforementioned workpiece holding member, The foam layer has an arithmetic mean roughness Ra of 0.1 μm or more and 50 μm or less on the surface that contacts the support. A workpiece holding member as described in any of (7) to (9) above.

[0092] With this configuration, the foam layer can be sufficiently fixed by the support.

[0093] (11) The workpiece is one selected from the group consisting of a ceramic substrate, a silicon substrate, a glass substrate, and a resin film substrate. A workpiece holding member as described in any of (1) to (10) above.

[0094] (12) Used to mount electronic components on the surface of the aforementioned workpiece. A workpiece holding member as described in any of (1) to (11) above.

[0095] (13) A workpiece holding member comprising a support and a workpiece holding layer laminated on the support for holding a workpiece, The workpiece is held on the workpiece holding layer, and the workpiece is held on the workpiece holding layer. The workpiece holding member is the workpiece holding member described in any of (1) to (12) above. Laminated structure.

[0096] However, the workpiece holding member and laminate according to the present invention are not limited to the embodiments described above. Furthermore, the workpiece holding member and laminate according to the present invention are not limited by the effects described above. The workpiece holding member and laminate according to the present invention can be modified in various ways without departing from the spirit of the invention. [Examples]

[0097] Next, the present invention will be described in more detail with reference to examples. The following examples are provided to further illustrate the present invention and do not limit its scope.

[0098] <Example 1> ·Support Stainless steel plate (SUS304BA) was used. The dimensions of the stainless steel plate (SUS304BA) were 30mm x 30mm, and its thickness was 0.5mm. The thickness of the stainless steel plate was measured according to the method described in the section on the embodiment above. The same applies to the following examples. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared using the materials (1) to (10) shown in Table 1 below in the proportions shown in Table 1, following the procedure below. (a) Using a stirring device (Awatori Rentaro, model "ARE-501", manufactured by Shinky Co., Ltd.), mix each of the materials (1) to (10) in Table 1 below in the proportions shown in Table 1 below for 15 minutes to obtain an emulsified solution. Then, the emulsified solution is degassed by drying under reduced pressure at room temperature (23±2℃) for 5 minutes to obtain the resin composition. (b) The resin composition is applied to the surface of a fluorosilicone-treated PET film (Nipper Sheet PET38x1-SS4A, manufactured by Nipper Co., Ltd.) using an applicator to form a resin layer. Then, a PET film (Lumirror S10, manufactured by Toray Industries, Inc.) is placed over the exposed surface of the resin layer to obtain a three-layer laminate in which the fluorosilicone-treated PET film is arranged on one side of the resin layer and the PET film is arranged on the other side of the resin layer. (c) The three-layer laminate is heated in a hot air oven at 85°C for 6 minutes to cure the resin layer. (d) After curing the resin layer, the fluorosilicone-treated PET film is peeled off from one side of the resin layer and the PET film is peeled off from the other side of the resin layer to obtain a cured resin layer. (e) The cured resin layer is heated and dried at 200°C for 3 minutes. The thickness of the silicone foam obtained according to the above procedure was 0.2 mm (200 μm). Furthermore, the silicone foam had an open-cell structure, with an open-cell ratio of 100%. Furthermore, the apparent density of the silicone foam is 0.55 g / cm³. 3 That was the case. The thickness of the silicone foam, the open-cell ratio of the silicone foam, and the apparent density of the silicone foam were measured according to the method described in the above section on embodiments. The same applies to the following examples.

[0099] [Table 1]

[0100] <Example 2> ·Support Stainless steel plate (SUS430BA) was used. The dimensions of the stainless steel plate (SUS430BA) were 30mm x 30mm, and its thickness was 1.0mm. • Workpiece holding layer A silicone foam layer was used. The silicone foam was prepared in the same manner as in Example 1. In other words, in Example 2 as well, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0101] <Example 3> ·Support Stainless steel sheet (hairline SUS) was used. The dimensions of the stainless steel plate (hairline SUS) were 30mm x 30mm, and its thickness was 1.5mm. Here, "hairline SUS" refers to stainless steel sheets that have been treated with a hairline finish. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared in the same manner as in Example 1. In other words, in Example 3 as well, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0102] <Example 4> ·Support Aluminum plate (A5052P) was used. The dimensions of the aluminum plate (A5052P) were 30mm x 30mm, and its thickness was 1.0mm. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared in the same manner as in Example 1. In other words, in Example 4 as well, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0103] <Example 5> ·Support A glass plate (slide glass) was used. The dimensions of the glass plate (slide glass) were 30 mm x 30 mm, and its thickness was 1.0 mm. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared in the same manner as in Example 1. In other words, in Example 5 as well, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0104] <Example 6> ·Support Glass plates (flat glass) were used. The dimensions of the glass plate (flat glass) were 30mm x 30mm, and its thickness was 3.4mm. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared in the same manner as in Example 1. In other words, in Example 6 as well, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0105] <Comparative Example 1> ·Support Aluminum plate (A-1050) was used. The dimensions of the aluminum plate (A-1050) were 30mm x 30mm, and its thickness was 0.4mm. • Workpiece holding layer A silicone foam layer was used. The silicone foam layer was prepared in the same manner as in Example 1. In other words, in Comparative Example 1, the thickness of the silicone foam was 0.2 mm (200 μm), the open-cell ratio of the silicone foam was 100%, and the apparent density of the silicone foam was 0.55 g / cm³. 3 That was the case.

[0106] <Comparative Example 2> ·Support Stainless steel plate (SUS430BA) was used. The dimensions of the stainless steel plate (SUS430BA) were 30mm x 30mm, and its thickness was 1.0mm. • Workpiece holding layer It was prepared using a peroxide-curing silicone adhesive as follows. (1) A peroxide-curing type silicone adhesive (DOWSIL® SH4280PSA, manufactured by Dow-Toray) is diluted with n-heptane to obtain a silicone adhesive composition with a solid content concentration of 30%. A suitable amount of curing catalyst (DOWSIL® SRX-212, manufactured by Dow-Toray) is added to the silicone adhesive composition. (2) On a PET film (Nipper Sheet PET38x1-SS4A, manufactured by Nipper Co., Ltd.) that has been treated with a fluorosilicone release agent, the silicone adhesive composition is applied to a thickness of 0.08 mm (80 μm) using an applicator. (3) The PET film after the silicone adhesive composition has been applied is heated in a hot air oven at 140°C for 3 minutes to volatilize the n-heptane and cure the peroxide-curable silicone adhesive to obtain a silicone adhesive layer. The thickness of the silicone adhesive layer was 0.08 mm (80 μm). The thickness of the silicone adhesive layer was measured in the same manner as the silicone foam layer. Furthermore, in obtaining the silicone adhesive layer, the silicone adhesive composition was not subjected to any foaming treatment as described above. In other words, the silicone adhesive layer was a non-foaming layer.

[0107] (Three-point bending stress of the support) For each example of the support, the three-point bending stress was measured according to the method described in the section on embodiments above. The results are shown in Table 2 below.

[0108] (Coefficient of linear thermal expansion of the support) For each example of the support, the coefficient of linear expansion was measured according to the method described in the section on embodiments above. The results are shown in Table 1 below. Furthermore, using the measured values ​​of the three-point bending stress and the measured values ​​of the coefficient of thermal expansion for each support in each example, the ratio of the three-point bending stress to the coefficient of thermal expansion (three-point bending stress / coefficient of thermal expansion) was calculated for each support in each example. The results are shown in Table 2 below.

[0109] (Arithmetic mean surface roughness Ra of the support) For each example of a support, the arithmetic mean roughness Ra of the surface on which the workpiece holding layer is laminated was measured according to the method described in the section on embodiments above. The results are shown in Table 2 below.

[0110] (Arithmetic mean surface roughness Ra of the foam layer) For the workpiece holding layer in each embodiment and the workpiece holding layer in Comparative Example 1, the arithmetic mean surface roughness Ra of the foam layer surface that contacts the support was measured according to the method described in the Embodiments section above. The results are shown in Table 2 below.

[0111] (Value of shear cohesion S) For each example of the workpiece holding layer, the shear adhesion value S to the polyimide film was measured before heating at a temperature of 150°C or higher, according to the method described in the section on embodiments above. The thickness of the polyimide film was 25 μm. Furthermore, as the polyimide film, for example, we used "Kapton 100H," a product manufactured by Toray DuPont. The results are shown in Table 2 below.

[0112] (Value of peeling force P) For each example, the value P of the 90° peel force against the polyimide film was measured after heating the workpiece holding layer at a temperature of 150°C or higher for 5 minutes, according to the method described in the section on embodiments above. The thickness of the polyimide film was 25 μm. Furthermore, as the polyimide film, for example, we used "Kapton 100H," a product manufactured by Toray DuPont. The results are shown in Table 2 below. Furthermore, using the shear adhesion value S measured for each workpiece holding layer and the 90° peel force value P measured for each workpiece holding layer, the ratio of the shear adhesion value S to the 90° peel force value P (S / P) was calculated for each workpiece holding layer. The results are shown in Table 2 below.

[0113] (Warping of the base material) For each example, the warping of the substrate was evaluated according to the following procedure. (1) A workpiece holding layer having the same planar dimensions as a support having a width of 20 mm and a length of 100 mm is laminated onto its surface, and then a polyimide film, which is a base material, is laminated onto the exposed surface of the workpiece holding layer to obtain a three-layer laminate in which the support, the workpiece holding layer, and the polyimide film are laminated in this order. (2) For the three-layer laminate, a 2kg roller is passed back and forth once from the exposed side of the polyimide film to obtain a test specimen for evaluating warpage. (3) The test specimen for warpage evaluation is reflow-treated under the following conditions. • Reflow processing conditions (a) After placing the test specimen for warpage evaluation into a reflow oven with an internal temperature of 50°C, the test specimen for warpage evaluation is held at a temperature of 50°C for 50 seconds. (b) Raise the furnace temperature from 50°C to 180°C in 60 seconds, then maintain the temperature at 180°C for 100 seconds. (c) Raise the furnace temperature from 180°C to 270°C in 60 seconds, then maintain the temperature at 270°C for 100 seconds. (d) Reduce the furnace temperature from 270°C to 100°C in 100 seconds. Then, the temperature inside the furnace is lowered to 23°C, and the test specimen for warping evaluation is left at that temperature for 120 minutes before being removed from the reflow furnace. Then, the polyimide film, which serves as the base material, was removed from the test specimen used for warpage evaluation that was taken out of the reflow oven, and the warpage of the polyimide film was evaluated. The removal of the polyimide film from the test specimen for warpage evaluation was carried out by peeling the polyimide film off from one end of the test specimen in the longitudinal direction (one end of one of the longer sides) at a speed of 300 mm / min in a 90° direction. Since the polyimide film is removed from the test specimen for warping evaluation in the manner described above, the removed polyimide film showed warping at both ends in the width direction. Therefore, the warping of the polyimide film (warping at both ends in the width direction) of the polyimide film, which serves as the base material, was evaluated by placing the polyimide film on a flat surface. Specifically, the lift H1 of one edge of the polyimide film in the width direction from the flat surface was measured, and the lift H2 of the other edge of the polyimide film in the width direction from the flat surface was measured, and the sum of H1 and H2 (H1 + H2) was defined as the warp of the polyimide film. The warpage of the polyimide film used as the base material was evaluated according to the following criteria. ◎: Curvature is less than 2mm. ○: Curvature of 2mm or more but less than 5mm. ×: Curvature of 5mm or more. The results are shown in Table 2 below. The polyimide film used was "Kapton 100H," a product manufactured by Toray DuPont. Furthermore, the thickness of the polyimide film was 25 μm.

[0114] (Fixability and peelability) For each example, the fixation of the substrate to the workpiece holding layer and the peelability of the substrate from the workpiece holding layer were evaluated based on the measurement results of the shear adhesion value S and the peel force value P. The fixation and peelability were evaluated according to the following criteria. ◎: The shear adhesion value S is 1N or greater, and the peeling force value P is 7N or less. ×: Anything other than the above. The results are shown in Table 2 below. Furthermore, based on the above evaluation criteria, it can be understood that for fixation, a shear adhesion value S of 1N or higher can be evaluated as ◎, and for peelability, a peel force value P of 7N or lower can be evaluated as ◎.

[0115] (Reusability) For each example, the reusability of the workpiece holding layer was evaluated. The reusability was evaluated by repeatedly measuring the shear adhesion value S and the peeling force value P using a single workpiece holding member. Reusability was evaluated according to the following criteria. ◎: When used repeatedly 100 times, the shear adhesion value S remains 1N or higher, and the peeling force value P remains 7N or lower. ○: When used repeatedly 50 times, the shear adhesion value S remains 1N or higher, and the peeling force value P remains 7N or lower. ×: Anything other than the above. The results are shown in Table 2 below.

[0116] (Brittleness of the support) The brittleness of the support was evaluated for each example. The brittleness of the support was evaluated using a three-point bending stress measurement of the support, based on the magnitude of the displacement at which fracture occurred when the support was pressed with the pressing member of the tensile testing machine. The brittleness of the support was evaluated according to the following criteria. ○: Displacement of 10 mm or more. △: Displacement is between 2mm and less than 10mm. ×: Displacement less than 2 mm. The results are shown in Table 2 below.

[0117] [Table 2]

[0118] Table 1 shows that in each example, the evaluation of the warpage of the substrate (polyimide film) is ○ or ◎, whereas in Comparative Example 1, the evaluation of the warpage of the substrate (polyimide film) is ×. Furthermore, in each embodiment, the evaluation of the fixation of the substrate (polyimide film) to the workpiece holding layer and the peelability of the substrate (polyimide film) from the workpiece holding layer was marked as ◎, whereas in Comparative Example 2, the evaluation of the fixation of the substrate (polyimide film) to the workpiece holding layer and the peelability of the substrate (polyimide film) from the workpiece holding layer was marked as ×. From this, it can be seen that the workpiece holding member according to the present invention can suppress warping of the workpiece due to heat treatment during surface mounting of electronic components, can sufficiently fix the workpiece before heat treatment during surface mounting of electronic components, and makes it easy to remove the workpiece after heat treatment during surface mounting of electronic components. [Explanation of Symbols]

[0119] 1 support, 2 workpiece holding layer, 3 workpiece, 10 workpiece holding member, 20 laminate, 1' Support, 2' Workpiece holding layer, SC: semiconductor chip, CB: semiconductor chip body, BE: bump electrode, ER: encapsulation resin, P: semiconductor package.

Claims

1. It comprises a support and a workpiece holding layer laminated on the support for holding a workpiece, The support is a stainless steel plate, an aluminum plate, or a glass plate. The thickness of the support is 0.3 mm or more and 5.0 mm or less. The ratio of the thickness H2 of the support to the thickness H1 of the workpiece holding layer (H2 / H1) is 0.1 or more and 100 or less. The support has a ratio of the value of the three-point bending stress (N / 10 mm) to the value of the coefficient of linear expansion (10⁻⁶ / °C) of 0.3 or more and 8.65 or less. The workpiece holding layer is composed of a resin composition, and before heating at a temperature of 150°C to 270°C, the shear adhesion value S to the polyimide film is 1 N / 100 mm. ２ The peel strength P for the polyimide film is 0.01 N / 20 mm or more and 7 N / 20 mm or less, after heating at a temperature of 150°C to 270°C for 5 minutes. Workpiece holding member.

2. The three-point bending stress of the support is 5 N / 10 mm or more. The workpiece holding member according to claim 1.

3. The coefficient of linear expansion of the support is 30 × 10 －６ / ℃ or lower The workpiece holding member according to claim 1 or 2.

4. The ratio (S / P) of the shear adhesion force value S to the 90° peel force value P is 5 or more. The workpiece holding member according to claim 1 or 2.

5. The support has an arithmetic mean roughness Ra of 2 μm or less on the surface on which the workpiece holding layer is laminated. The workpiece holding member according to claim 1 or 2.

6. The aforementioned resin composition includes a silicone resin or a fluororesin. The workpiece holding member according to claim 1 or 2.

7. The workpiece holding layer is configured as a rubber layer or a foam layer. The workpiece holding member according to claim 6.

8. The apparent density of the foam layer is 0.05 g / cm³. ３ 0.90g / cm or more ３ The following is The workpiece holding member according to claim 7.

9. The average bubble diameter of the foam layer is between 1 μm and 100 μm. The workpiece holding member according to claim 7.

10. The foam layer has an arithmetic mean roughness Ra of 0.1 μm or more and 50 μm or less on the surface that contacts the support. The workpiece holding member according to claim 7.

11. The workpiece is one selected from the group consisting of a ceramic substrate, a silicon substrate, a glass substrate, and a resin film substrate. The workpiece holding member according to claim 1 or 2.

12. Used to mount electronic components on the surface of the aforementioned workpiece. The workpiece holding member according to claim 1 or 2.

13. A workpiece holding member comprising a support and a workpiece holding layer laminated on the support for holding a workpiece, The workpiece is held on the workpiece holding layer, and the workpiece is held on the workpiece holding layer. The workpiece holding member is the workpiece holding member according to claim 1 or 2. Laminated structure.

Images